JP2001223383A - Optical semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor device which is easily miniaturized by optimizing device performance. SOLUTION: There are provided a light-emitting element 13 which projects light to a scale 10, a photodetector 14 which detects the light from the scale 10, and a wiring board 11 which supports the photodetector 14 and the light- emitting element 13 while electrically connected to the photodetector 14. The light-emitting element 13 and the photodetector 14 are arranged so that the light-emitting element 13 is positioned on an end side on the surface opposite to the surface of the wiring board 11 which faces the scale 10 for polymerization/joint. A translucent part 12 is provided in a region corresponding to a light- emitting surface of the light-emitting element 13 and a light-receiving surface of the photodetector 14 of the wiring board 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device having a function of irradiating an object with light and detecting light from the object.

[0002]

2. Description of the Related Art A conventional optical semiconductor device is disclosed in
The thing disclosed in 32668 gazette is known.

[0003] The optical semiconductor device disclosed in the publication is shown in FIG.
As shown in FIG. 2, a light-emitting portion 103a is provided, and a surface of the wiring substrate 105 using the polyimide resin provided with the light-transmitting portion 103a is opposite to the surface facing the object 104 to be irradiated. Element 101 and light receiving element 1
02, respectively, and the light emitting element 101 and the light receiving element 10
2 is sealed with an epoxy resin 106.

The mounting method of the light emitting element 101 and the light receiving element 102 is as follows. That is, the front electrode of the light emitting element 101 is directly joined to the land of the wiring board 105, and the back electrode is connected to the wiring board 10 by the Au wire 107.
5 lands.

The light receiving element 102 includes a wiring board 105
And flip-chip bonding by solder bumps 108.

In this optical semiconductor device, the object 104 is irradiated with light from the light emitting element 101 through the light transmitting part 103a of the wiring board 105, and the reflected light passes through the light transmitting part 103b and enters the light receiving element 102. . At this time, the object 10
When the reflected light from the light source 4 returns directly to the light emitting element 101 as a light source, the operation of the light emitting element 101 becomes unstable. Therefore, the optical axis of the light emitting element 101 is tilted relatively to the reflecting surface of the object 104. I have.

[0007] In the conventional example shown in FIG.
Since the light emitting element 101 and the light receiving element 102 are mounted on the surface opposite to the surface facing the object 104 in 05,
The distance between the light emitting element 101 and the object 104 can be reduced. As a result, there is an advantage that the entire optical semiconductor device can be downsized while easily optimizing the performance.

[0008]

However, in the case of the conventional optical semiconductor device, (1) the light emitting element 101 and the light receiving element 102 are separately mounted on the wiring board 105. (2) A wiring portion for drawing out the Au wire 107 is required on the wiring board 105. (3) The light emitting element 101 and the light receiving element 102 are connected to the wiring board 1
In FIG. 06, since the bonding is performed by the Au wire 107 and the solder bump 108, the strength of the bonding portion is weak, and mechanical reinforcement for covering and sealing the light emitting element 101 and the light receiving element 102 with the epoxy resin 106 or the like after the bonding is necessary.

In the case of the conventional optical semiconductor device, there are various restrictions on the mounting described above, and there is a limit in reducing the size of the optical semiconductor device.

In addition, when the optical axis of the light emitting element 101 is inclined with respect to the reflecting surface of the object 104, the distance between the light emitting element 101 and the object 104 is limited by the presence of the substrate edge 109. I was

In view of the foregoing, the present invention has been made in view of the above-mentioned conventional problems, and has been made to reduce the size of a light-receiving element to a size substantially equal to the size of a light-receiving element while facilitating optimization of device performance. It is an object of the present invention to provide an optical semiconductor device that can perform the above-described operations and has excellent durability.

[0012]

According to the first aspect of the present invention,
A light-emitting element that irradiates the object with light, a light-receiving element that receives and detects light from the object, and a wiring board that supports the light-receiving element and the light-emitting element and is electrically connected to the light-receiving element. Wherein the light emitting element and the light receiving element are overlap-bonded to each other on the surface of the wiring board opposite to the surface facing the object in such a manner that the light emitting element is located on the end side. In addition, a light-transmitting portion is provided in a region of the wiring board corresponding to a light-emitting surface of the light-emitting element and a light-receiving surface of the light-receiving element.

According to the present invention, by disposing the light emitting element superposed on the light receiving element at the end of the wiring board,
The distance between the light emitting surface of the light emitting element and the object can be minimized. That is, in order to receive the light projected from the light emitting element and sealed off by the object on the light receiving surface of the light receiving element, it is necessary to tilt the optical axis of the light emitting element relative to the object. When the optical axis of the light emitting element is inclined, the distance between the light emitting element and the object can be shortened by adopting a configuration in which the light emitting element is disposed on the end side of the wiring board as in the present invention,
The arrangement of the optical semiconductor device with respect to the object can be more easily adjusted to the optimum distance of the optical performance than in the conventional example.

According to a second aspect of the present invention, in the optical semiconductor device according to the first aspect, the light emitting element is fixed to an upper surface end of the light receiving element joined to the wiring board. Things.

According to the present invention, since the light emitting element is fixed to the upper end of the light receiving element joined to the wiring board, the optical semiconductor device can be occupied by a space occupying substantially the same size as the light receiving element. Thus, it is possible to reduce the size.

According to a third aspect of the present invention, in the optical semiconductor device according to the first or second aspect, the light transmitting portion of the wiring board is
It is characterized by being sealed with a light-transmitting sealing material.

According to the present invention, the arrangement of the optical semiconductor device with respect to the object can be easily adjusted to the optimum distance for the optical performance, and the durability of the optical semiconductor device can be improved. Becomes

[0018]

Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, as an application example of an optical semiconductor device, a vertical cavity surface emitting laser (VCSEL: Verti) is used as a light source as a light source.
cal Cavity SurfaceEmittin
(g Laser), the present invention is applied to a reflection type optical encoder, but the present invention is not limited to this, and can be applied to various optical sensors and optical pickups. .

Embodiment 1 (Configuration) Embodiment 1 of the present invention will be described below with reference to FIGS. FIG. 1 is a plan view of the optical semiconductor device according to the first embodiment of the present invention, and FIG. 2 is a sectional view taken along line AA of FIG.

The first embodiment is an optical encoder to which the optical semiconductor device of the present invention is applied. The optical encoder has a movable scale 10 and a light-transmitting portion 12, and has flexibility that opposes the scale 10. Printed circuit board (FPC)
11 and the back side of the wiring board 11, that is, the scale 1
A light emitting element 13 and a light receiving element 14 constituting a VCSEL provided on a surface opposite to the surface on the 0 side;
4, a plurality of lands 16 on the wiring substrate 11 electrically connected to the Au bumps 15, and a portion of the light receiving element 14 except for a portion facing the light transmitting portion 12. An adhesive layer 17 is provided for joining the upper surface and the wiring board 11 with an insulating adhesive.

On the back side of the wiring board 11, a wiring pattern 18 made of a conductive metal such as Cu is formed.
A land 16 subjected to a u plating process is formed.

In the wiring board 11, a portion overlapping the light emitting surface 20 of the light emitting element 13 and the light receiving surface 21 of the light receiving element 14 is cut out to form the light transmitting portion 12.

The adhesive layer 17 is formed of the Au bump 1 described above.
The mechanical reinforcement performance for bonding the joint between the land 5 and the land 16 and the space between the upper surface of the light receiving element 14 and the back surface of the wiring board 11 except for the portion facing the light transmitting portion 12 and the intrusion of dirt, dust, and moisture. It also has a sealing function to prevent.

The adhesive layer 17 is formed by applying a thermosetting adhesive to a portion of the wiring board 11 facing the light receiving element 14 except for the light transmitting portion 12 so as to have a desired thickness.
The bumps 15 provided on the light receiving element 14 and the lands 16 on the wiring board 11 are aligned so as to overlap with each other, and the bumps 15 and the lands 16 are electrically joined by pressure welding to form a so-called flip chip. Bonding is performed, a layer of a thermosetting adhesive is formed in a gap between the upper surface of the light receiving element 14 and the wiring board 11, and the layer is formed by heating and curing.

As the thermosetting adhesive, an insulating epoxy resin, for example, TAP0034N (trade name, manufactured by Toshiba Chemical Corporation) can be used.

The thermosetting adhesive is also applied on the lands 16, but the adhesive is removed by pressing the bumps 15 and the lands 16, and the light receiving element 14 and the wiring board 11 are electrically connected. Connected to. Further, since the adhesive layer 17 is made of a thermosetting adhesive, it contracts during heat curing,
The bonding between the bump 15 and the land 16 is mechanically strengthened.

The wiring board 11 has a portion corresponding to the light transmitting portion 12 formed by notching. The space of the notch extends vertically downward, and a space reaching the upper surface of the light receiving element 14 except for the light emitting element 13 is a light transmitting portion serving as a light passage.

This space corresponds to the light transmitting portion 12 and is called a second light transmitting portion. The light transmitting part 12 and the second light transmitting part are collectively referred to as a light transmitting part 36 of the device.

The light-transmitting portion 36 of the device corresponds to all portions of the device which are paths for light entering and exiting the light emitting surface of the light emitting element 13 and the light receiving surface of the light receiving element 14.

The adhesive layer 17 does not spread into the light transmitting portion 36 of the device which is an open space due to surface tension.

In FIG. 2, the light receiving element 14 of the adhesive layer 17
Although the end surface in contact with is shown to be orthogonal to the light receiving element 14, it actually spreads slightly along the upper surface of the light receiving element 14 and is slightly curved, although not shown.

However, the spread does not reach the light receiving surface 21 of the light receiving element 14. Therefore, the adhesive layer 17
It does not cover the light emitting surface 20 of the light emitting element 13 or the light receiving surface 21 of the light receiving element 14 arranged in the light transmitting portion 36 of the device. A
The u bumps 15 are formed by a ball bump method or a plating method using a wire bonder. After bonding the light receiving element 14 and the wiring board 11, the surface of the light emitting element 13 and the Au wire 19 described later are connected to the back surface of the wiring board 11. The height of the bump 15 and the thickness of the land 16 are set so as not to make contact.

The light emitting element 13 is positioned at the end of the upper surface of the light receiving element 14 and connects the back electrode of the light emitting element 13 and the light receiving element 14 with a conductive adhesive, an Au-Au junction, or an Au-S
It is electrically and mechanically fixed to the upper surface end of the light receiving element 14 by the i-junction.

The surface electrode of the light emitting element 13 and the light receiving element 14 are electrically connected by the Au wire 19.

As shown in FIG. 2, since the light emitting element 13 is fixed on the upper surface of the light receiving element 14, the end face of the light emitting element 13 and the end face 14a of the light receiving element 14 are substantially on the same plane. Further, the bumps 15 provided on the light receiving element 14 and the lands 16 on the wiring board 11 are positioned with each other, are joined by pressure contact, and are further bonded by the adhesive layer 17.
When the light receiving element 14 and the light receiving element 14 are bonded,
Is arranged so as to be located on substantially the same plane as the end faces 13a and 14a.

Accordingly, the light emitting element 13 is connected to the wiring board 11
Are arranged at a position facing the end face of the. Further, the light emitting element 13 is fixed to the upper surface of the light receiving element 14 as described above. However, as shown in FIG. 2, the upper surface is lower than the surface of the wiring board 11 and is disposed inside the light transmitting portion 36 of the device. Have been.

The wiring board 11 in the first embodiment is
As shown in FIG. 1, the light receiving element 14 includes a mounting part 22 on which the light receiving element 14 is mounted, and a wiring part 23 connecting the mounting part 22 and an external member by a wiring pattern 18.

The area of the mounting part 22 is set to be slightly larger than the area of the upper surface of the light receiving element 14.

The positional relationship between the scale 10 and the wiring board 11 is shown in FIG. As shown in the figure, the shape of the wiring substrate 11 is a shape facing the disk-shaped scale 10 with a hole in the center.

The wiring substrate 11 is fixed, and the scale 10 facing the wiring substrate 11 is rotated about a central axis by a driving mechanism (not shown).

In FIG. 2, for convenience of explanation, the scale 10 is illustrated as being inclined with respect to the light emitting surface 20 on the upper surface of the light emitting element 13, but the inclination is relative. The light emitting surface 20 of the light emitting element 13 may be tilted with respect to the scale 10 by disposing the scale 10 horizontally and tilting the wiring board 11 on which the light emitting element 13 is mounted via the light receiving element 14.

A portion excluding the scale 10 in the configuration of the optical encoder described above corresponds to the optical semiconductor device of the first embodiment.

(Operation) In the structure of the optical encoder described above, the light emitting element 13 is externally (not shown) via the wiring pattern 18 formed on the wiring board 11.
2, a laser beam is projected from the light emitting surface (laser output port of the VCSEL) 20 as shown by an arrow in FIG.

The laser light reaches the surface of the scale 10 through the light transmitting part 12, and the reflected light from this surface is
Since the scale 10 is inclined with respect to the light emitting surface 20, the scale 10 does not return to the light emitting surface 20, but reaches the light receiving surface 21 on the light receiving element 14 through the light transmitting portion 12 again as shown by the arrow.
Then, the light is converted into an electric signal by the light receiving element 14, and the output becomes an input signal of an external processing circuit (not shown) via the wiring pattern 18.

In this case, a portion having a high reflectance and a portion having a low reflectance are formed on the scale 10 at predetermined intervals.
In addition, since the light is rotated and moved as described above, the intensity of the reflected light from the scale 10 periodically changes with the movement of the scale 10, and the change becomes a change in the output signal of the light receiving element 14. Is detected and counted, whereby the movement amount of the scale 10 is detected.

(Effects) According to the optical semiconductor device of the first embodiment described above, the light receiving element 14 is firmly fixed to the wiring board 11 by the adhesive layer 17, and the light emitting element 13 is also fixed by the conductive adhesive or the like. Since it is firmly fixed to the light receiving element 14, the mechanical strength of the entire device can be maintained.

Further, since the light emitting element 13 is disposed at a position facing the end of the wiring board 11, that is, at the end of the entire device, the distance between the light emitting surface 20 of the light emitting element 13 and the scale 10 is reduced. In addition, the distance between the light emitting surface 20 for projecting the laser light and the light receiving surface 21 for receiving the reflected light can be shortened, whereby the size of the entire device can be reduced.

Further, since the mounting portion 22 of the wiring board 11 is set to have an area substantially equal to the area of the light receiving element 14, the device can be downsized by reducing the mounting size.

Since the wiring substrate 11 is used, the mounting part 22 and the wiring part 23 for the external circuit can be formed on the same substrate. Therefore, the first embodiment is structurally the simplest, and This has the effect of reducing manufacturing costs.

Second Embodiment (Configuration) Next, referring to FIG. 3, a second embodiment of the present invention will be described.
Will be described. The same members as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.
FIG. 3 is a sectional view of the optical semiconductor device according to the second embodiment.

The second embodiment differs from the first embodiment in the following points. That is, the wiring board according to the second embodiment is formed of the glass substrate 24 having high light transmittance. The wiring pattern 25 on the glass substrate 24 is formed by depositing and etching aluminum, copper, or nickel.

The light emitting surface (laser output port of VCSEL) 20 of the light emitting element 13 on the glass substrate 24 and the light receiving element 1
The portion overlapping the light receiving surface 21 of No. 4 forms a light transmitting portion by not using aluminum wiring.

(Operation) The operation of the optical semiconductor device of the second embodiment is different from that of the first embodiment in the following points. That is, in the encoder configuration described above, a current is applied to the light emitting element 13 from the outside (not shown) via the wiring pattern 25 formed on the glass substrate 24, and as shown by an arrow from the light emitting surface 20. Laser light is projected. This laser light reaches the surface of the scale 10 through the glass substrate 24, and the reflected light therefrom again passes through the glass substrate 24 as shown by the arrow, and the light receiving element 14
The light reaches the upper light receiving surface 21. Then, the light is converted into an electric signal by the light receiving element 14, and the output becomes an input signal of an external processing circuit (not shown) via the wiring pattern 25.

(Effect) According to the optical semiconductor device of the second embodiment described above, since the glass substrate 24 having a high light transmittance is used, the glass substrate 24 serving as the wiring substrate needs to be precisely cut. It is not necessary to perform processing such as chipping,
Thereby, there is an effect that dust and dust can be prevented from entering from the surface of the glass substrate 24.

Further, since the glass substrate 24 is a hard base material, the mechanical strength of the mounting portion is increased as compared with the above-described first embodiment, and there is an effect that the durability of the entire device can be improved.

(Embodiment 3) (Configuration) Embodiment 3 of the present invention will be described with reference to FIG. The same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. FIG. 4 shows the second embodiment.
It is sectional drawing of the optical semiconductor device of FIG.

The third embodiment differs from the first embodiment in the following points. That is, the mounting portion is a hard substrate 27 made of a glass epoxy substrate or a glass substrate having a light transmitting portion 26.
And a wiring portion for an external circuit (not shown) is formed of two types of wiring boards including a wiring board 28 which is a flexible wiring board having flexibility.

Further, as in the first embodiment, the light transmitting portion 26 is formed by cutting out a portion of the hard substrate 27 opposite to the light emitting surface 20 of the light emitting element 13 and the light receiving surface 21 of the light receiving element 14. .

A wiring pattern 29 and a wiring pattern 30 are provided on the hard substrate 27 and the wiring substrate 28, respectively.

The two wiring patterns 29 and 30 are opposed to each other, and are electrically connected by using solder or an anisotropic conductive material (not shown). The wiring patterns 29, 30
Are the same as those in the first embodiment.

(Operation) The operation of the third embodiment differs from that of the first embodiment in the following points.

That is, in the encoder configuration of the third embodiment, a current is applied to the light emitting element 13 from the outside (not shown) through the wiring pattern 30 and the wiring pattern 29 in this order, as shown in FIG. As described above, the light emitting element 13
A laser beam as shown by an arrow is projected from the light-emitting surface 20 of FIG.

The laser beam passes through the light transmitting portion 26 of the hard substrate 27 and reaches the surface of the scale 10, and the reflected light there again returns to the light transmitting portion 26 of the hard substrate 27 as shown by the arrow.
And reaches the light receiving surface 21 on the light receiving element 14.

The light is converted into an electric signal by the light receiving element 14, and the output is output to the wiring pattern 29 and the wiring pattern 3.
It becomes an input signal of an external processing circuit (not shown) via 0 in order.

(Effect) According to the optical semiconductor device of the third embodiment described above, the hard substrate 27 is used for the mounting portion requiring mechanical strength, and the optical semiconductor device can be connected to an external circuit requiring flexibility in the substrate shape. By using the wiring board 28 for the wiring, there is an effect that both the durability of the device and the degree of freedom of the mounting design can be simultaneously improved.

(Embodiment 4) (Configuration) Embodiment 4 of the present invention will be described with reference to FIG. The same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. FIG. 6 shows the fourth embodiment.
It is sectional drawing of the optical semiconductor device of FIG.

The optical semiconductor device of the fourth embodiment differs from the first embodiment in the following points. That is, the thickness of the adhesive layer 32 is adjusted so that the upper surface of the light emitting element 13 with the light emitting surface 20 and the Au wire 19 are arranged within the thickness range of the light transmitting portion 12 of the wiring board 11. The element 14 is joined to the wiring board 11.

More specifically, the distance s from the back surface of the light emitting element 13 to the top of the Au wire 19 is equal to the Au bump 3.
The thickness of the Au bump 31 is adjusted so as to be not less than the sum of the thicknesses of the first and the lands 16 and not more than the sum of the thicknesses of the Au bump 31, the land 16 and the light transmitting portion 12 of the wiring board 11.

Therefore, when the distance between the surface of the wiring board 11 and the scale 10 is the same as in the first embodiment, the distance from the light emitting surface (laser output port) 20 of the light emitting element 13 to the scale 10
Is shorter than in the first embodiment.

In the fourth embodiment, the wiring substrate is the wiring substrate 11, but may be the glass epoxy substrate having the notch shown in the third embodiment.

(Operation) According to the optical semiconductor device of the fourth embodiment described above, the laser light projected from the light emitting surface of the light emitting element 13 is reflected by the scale 10 located at a closer position and reaches the light receiving surface 21. . Other operations are the same as those in the first embodiment.

(Effect) According to the optical semiconductor device of the fourth embodiment described above, the surface of the wiring board 11 and the Au wires 19
Is small, the distance between the light emitting surface 20 and the scale 10, which is the object, can be made closest to each other, whereby the adjustment range of the distance between the optical semiconductor device and the scale 10 can be expanded. . Therefore, there is an effect that the optimization of the device performance is facilitated.

(Fifth Embodiment) (Structure) A fifth embodiment of the present invention will be described with reference to FIGS. The same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. FIG. 7 is a plan view of the optical semiconductor device according to the fifth embodiment, and FIG. 8 is a sectional view taken along line BB of FIG. FIG. 9 is a sectional view of a modification of the optical semiconductor device of the fifth embodiment.

The optical semiconductor device of the fifth embodiment differs from the first embodiment in the following points. That is, the light-transmitting portion 36 of the device including the light-transmitting portion 12 of the wiring board 11 is sealed with a transparent sealing material 35 made of a silicone resin or an ultraviolet-curable epoxy resin. The sealing material 35 does not protrude from the surface of the wiring board 11.

As a modified example, as shown in FIG. 9, the light transmitting portion 12 of the wiring board 11 is replaced with a glass plate 38 having a high light transmittance.
May be covered from above the surface of the wiring board 11, and the periphery thereof may be fixed by fixing with an epoxy-based adhesive 39.

(Operation) According to the fifth embodiment, the laser light projected from the light emitting surface 20 reaches the surface of the scale 10 through the sealing material 35, and the reflected light is again reflected as shown by the arrow. The light reaches the light receiving surface 21 on the light receiving element 14 through the sealing material 35.

(Effect) According to the optical semiconductor device of the fifth embodiment, by sealing the light emitting surface 20 and the light receiving surface 21 with the sealing material 35, the moisture resistance of the device can be improved. This has the effect.

(Embodiment 6) (Configuration) Embodiment 6 of the present invention will be described with reference to FIG. The same members as those of the actual hard disk 1 are denoted by the same reference numerals, and description thereof is omitted. FIG. 10 is a sectional view of the optical semiconductor device according to the sixth embodiment.

The optical semiconductor device of the sixth embodiment differs from the optical semiconductor device of the first embodiment in the following points. That is, the wiring substrate 11 around the light receiving element 14 and the vicinity thereof is reinforced with the epoxy adhesive 40.

In the sixth embodiment, the wiring substrate 11 is
Although a PC was used, a hard substrate such as a glass epoxy substrate or a glass substrate may be used.

(Operation) The operation of the optical semiconductor device of the sixth embodiment differs from that of the first embodiment in the following points. That is, the wiring section 2 connected to an external circuit (not shown)
In addition, even if the bending stress indicated by the arrow in FIG.

(Effect) According to the above-described optical semiconductor device,
There is an effect that the mechanical strength of the device can be improved.

(Embodiment 7) (Configuration) Embodiment 7 of the present invention will be described with reference to FIG. The same members as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted. FIG. 11 is a sectional view of the optical semiconductor device according to the seventh embodiment.

The optical semiconductor device of the seventh embodiment differs from the optical semiconductor device of the first embodiment in the following points. That is, the light emitting element 13 and the Au wire 19 on the light receiving element 14 are exposed from the end of the wiring board 49. Based on this configuration, the areas of the light transmitting portion 50, the wiring substrate 49, and the adhesive layer 48 are reduced as the substrate ends recede.

(Effect) According to the seventh embodiment, the laser light projected from the light emitting surface 20 does not pass through the light transmitting part 50 but reaches the surface of the scale 10 and the reflected light is reflected in FIG.
As shown by an arrow, the light reaches the light receiving surface 21 on the light receiving element 14 through the light transmitting part 50.

(Effect) According to the above-described optical semiconductor device,
With the configuration in which the light emitting element 13 is exposed from the wiring board 11, the bonding step of the Au wire 19 can be performed in the final step. As a result, the Au wire 19 is
9 has the effect of reducing the risk of disconnection during assembly.

According to the present invention described above, the following configuration can be added. (Supplementary Note 1) A light emitting element that irradiates light to an object, a light receiving element that receives and detects light from the object, and supports the light receiving element and the light emitting element and is electrically connected to the light receiving element. An optical semiconductor device, comprising: a light-emitting element and a light-receiving element, wherein the light-emitting element and the light-receiving element are joined to a surface of the wiring substrate opposite to a surface facing the object; A light-transmitting portion provided in a region corresponding to the light-emitting surface of the element and the light-receiving surface of the light-receiving element; An optical semiconductor device comprising a conductive adhesive layer.

With this configuration, the distance between the light emitting element and the object can be shortened, and the arrangement of the optical semiconductor device with respect to the object can be more easily adjusted to the optimum distance for the optical performance than in the conventional example. It is also possible to maintain the mechanical strength of the optical semiconductor device.

(Supplementary note 2) The optical semiconductor device according to Supplementary note 1, wherein the light emitting element is fixed to an upper surface end of the light receiving element joined to the wiring board. With this configuration, it is possible to reduce the size of the optical semiconductor device so as to have an occupied space substantially equal to the size of the light receiving element.

(Supplementary Note 3) The optical semiconductor device according to Supplementary note 1 or 2, wherein the light transmitting portion of the wiring substrate is sealed with a sealing material having a light transmitting property. With this configuration, it is possible to easily adjust the arrangement of the optical semiconductor device with respect to the object to the optimum distance for the optical performance, and to improve the durability of the optical semiconductor device.

[0091]

According to the first aspect of the present invention, it is possible to provide an optical semiconductor device capable of adjusting the optical performance to the optimum distance more easily than in the conventional example.

According to the second aspect of the present invention, it is possible to provide an optical semiconductor device which can be reduced in size so as to have an occupied space substantially equal to the size of the light receiving element.

According to the third aspect of the present invention, it is possible to provide an optical semiconductor device capable of improving durability such as moisture resistance.

[Brief description of the drawings]

FIG. 1 is a plan view of an optical semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a sectional view of an optical semiconductor device according to a second embodiment of the present invention.

FIG. 4 is a sectional view of an optical semiconductor device according to a third embodiment of the present invention.

FIG. 5 is a plan view of a modification of the optical semiconductor device of the first embodiment shown in FIG.

FIG. 6 is a sectional view of an optical semiconductor device according to a fourth embodiment of the present invention.

FIG. 7 is a plan view of an optical semiconductor device according to a fifth embodiment of the present invention.

FIG. 8 is a sectional view taken along line BB of FIG. 7;

FIG. 9 is a sectional view of a modification of the optical semiconductor device according to the fifth embodiment of the present invention.

FIG. 10 is a sectional view of an optical semiconductor device according to a sixth embodiment of the present invention.

FIG. 11 is a sectional view of an optical semiconductor device according to a seventh embodiment of the present invention.

FIG. 12 is a sectional view of a conventional optical semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Scale 11 Wiring board 11a End face 12 Translucent part 13 Light emitting element 13a End face 14 Light receiving element 15 Bump 16 Land 17 Adhesive layer 18 Wiring pattern 19 Wire 20 Light emitting surface 21 Light receiving surface 22 Mounting part 23 Wiring part 24 Glass substrate 25 Wiring pattern 26 Translucent part 27 Hard substrate 28 Wiring board 29 Wiring pattern 30 Wiring pattern 31 Bump 32 Adhesive layer 35 Sealing material 38 Glass plate 39 Epoxy-based adhesive 40 Epoxy-based adhesive 48 Adhesive layer 49 Wiring board 50 Light-transmitting part

 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 2F065 AA07 AA09 AA39 BB02 BB03 BB29 DD13 FF17 FF65 FF67 GG06 HH04 JJ09 MM04 PP22 QQ51 2F103 BA04 CA03 DA13 EA02 EA12 EB02 EB11 EB27 EB32 EB21 GA03 FA03 5F089 BA01 BA04 BB02 BC11 BC16 CA20 EA01 EA03

Claims (3)

[Claims] 1. A light emitting element for irradiating light to an object, a light receiving element for receiving and detecting light from the object, and supporting the light receiving element and the light emitting element and being electrically connected to the light receiving element. An optical semiconductor device comprising: a wiring substrate, wherein the light emitting element and the light receiving element are located on an end side on a surface of the wiring substrate opposite to a surface facing the object. An optical semiconductor device, wherein the light-transmitting portion is provided in a region corresponding to the light-emitting surface of the light-emitting element and the light-receiving surface of the light-receiving element on the wiring substrate, while being superposed and joined in an arrangement. 2. The optical semiconductor device according to claim 1, wherein said light emitting element is fixed to an upper surface end of said light receiving element joined to said wiring board. 3. The optical semiconductor device according to claim 1, wherein the light-transmitting portion of the wiring substrate is sealed with a light-transmitting sealing material.