JP2001223154A - Charged particle beam aligner, electrostatic deflector and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To structure a deflection electrode to form an electrostatic deflector of a charged particle beam aligner with a material having an optimum specific resistance to control an eddy current and also having excellent strength for cleaning to be conducted in the oxygen plasma. SOLUTION: The deflection electrode is formed of an inorganic glass ceramics in which non-magnetic conductive fine particles such as RuO2 or the like are dispersed and amount of non-magnetic conductive fine particles is optimized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention generally relates to the manufacture of semiconductor devices, and more particularly to an electrostatic deflector used in a charged particle beam exposure apparatus and a method of manufacturing the same.

[0002] Charged particle beam lithography is an indispensable technique for manufacturing advanced semiconductor integrated circuits with a large integration density. By using charged particle beam lithography, a pattern having a width of 0.05 μm or less
Exposure can be performed with an alignment error of μm or less. See, for example, U.S. Pat. No. 5,278,419.
For this reason, charged particle beam lithography is a semiconductor memory device having a very large storage capacity exceeding 1 Gbit,
Alternatively, it is considered to play a central role in the manufacture of future semiconductor devices such as high-speed microprocessors having very powerful arithmetic functions.

[0003]

2. Description of the Related Art FIG. 1 shows a schematic configuration of a charged particle beam exposure apparatus 10 used in such charged particle beam lithography.

Referring to FIG. 1, a charged particle beam exposure apparatus 10 includes a beam source 11 such as an electron gun made of LaB6 or the like in a lens barrel 10A, and is emitted from the electron gun 11 along a predetermined optical axis. Electromagnetic lenses 14 </ b> A to 14 </ b> F are sequentially arranged from the upstream side to the downstream side in the optical path of a charged particle beam such as electrons reaching the substrate 13 held on the movable stage 12.

In the charged particle beam exposure apparatus 10, the charged particle beam emitted from the beam source 11 is typically a beam shaping plate 15 having a rectangular aperture.
The beam is first shaped into a rectangular shape by passing through, and is focused by the electromagnetic lenses 14A and 14B in the form of a parallel beam on the block mask 16 on which a number of fine beam shaping apertures are formed. In the vicinity of the block mask 16, an electromagnetic deflector 16A and an electrostatic deflector 16A
B are provided, and by driving them, the rectangular charged particle beam is deflected from the predetermined optical axis,
By passing through a selected aperture in the block mask 16, it is shaped into a desired selected shape.

[0006] The charged particle beam shaped into the selected shape is returned to the predetermined optical axis by the electromagnetic lens 14C and reduced by the electromagnetic lenses 14D and 14E constituting a reduction optical system. The light is focused on the substrate 13 on the stage 12 by the electromagnetic lens 14F. That is, the electromagnetic lens 14F functions as an objective lens.

The electromagnetic lens 1 is provided in the lens barrel 10A.
An electrostatic deflector 17 and an electromagnetic deflector 18 for deflecting the charged particle beam focused on the substrate 13 and scanning the surface of the substrate 13 are provided near 4F. The electromagnetic deflector 18 includes a coil, and scans the charged particle beam at a relatively low speed over a wide area of about several millimeters square on the surface of the substrate 13 by a generated magnetic field. The electric deflector 17 is made of an electrode plate, and scans the charged particle beam at a very high speed in a limited area of about 100 μm square on the surface of the substrate 13 by the generated electric field. Similarly, the electromagnetic deflector 16A causes the charged particle beam to scan a wide area on the block mask 16 at low speed by the generated magnetic field, whereas the electrostatic deflector 16B causes A limited area on the block mask 16 is scanned very quickly.

In the charged particle beam exposure apparatus 10 shown in FIG.
Further, another electrostatic deflector 19 is provided in the lens barrel 10A, and by driving this, the charged particle beam on the substrate 13 is turned on and off at a high speed. As a result, the substrate 13 on the stage 12 Exposure is performed at high speed by a charged particle beam having a desired shape. Further, below the stage 12, an immersion lens 11B used for optical axis alignment of the charged particle beam is formed.

[0009]

In such a charged particle beam exposure apparatus, since a resist film is generally formed on the surface of the substrate 13, a part of the resist film is exposed with the charged particle beam exposure. Spattering is inevitable, and as a result, an organic film due to the scattered resist film is prevented from being formed on the deflection electrodes constituting the electrostatic deflector 17 while the exposure operation is being repeated. Absent. Such an organic film is generally an insulating film, and tends to cause charge-up. A similar problem is that the other electrostatic deflector 16B
Alternatively, it also occurs at 19.

Therefore, conventionally, in such a charged particle beam exposure apparatus, after a predetermined operation time has elapsed, the lens barrel 10
Oxygen plasma was generated in A, and the organic insulating film deposited on the deflection electrode constituting the electrostatic deflector was removed.

In such a charged particle beam exposure apparatus, an electrostatic deflector is used in a magnetic field formed by an electromagnetic lens or an electromagnetic deflector. When formed by
An eddy current is generated in the deflection electrode, and a magnetic field generated by the eddy current causes a problem that the position of the charged particle beam deflected by the electrostatic deflector is shifted. For this reason,
The deflection electrode of the electrostatic deflector preferably has a specific resistance of about 10 -1 Ω · cm.
It is made of a conductive ceramic such as C or a material obtained by depositing a thin metal film such as Au or Pt on a base made of such a ceramic.

However, when such a conventional material is used, for example, when the Al2O3.TiC is used as the deflection electrode of the electrostatic deflector, the cleaning process using the oxygen plasma described above can be performed. Is oxidized, and as a result, the specific resistance of the deflection electrode changes. In addition, the Al2O3. In a deflection electrode having a configuration in which a base made of ceramic such as TiC is covered with a metal film,
The metal film is subjected to sputtering, which also changes the specific resistance of the deflection electrode.

Further, Japanese Patent Application Laid-Open No. 9-293472 discloses an example in which carbon is used as a deflection electrode of the electrostatic deflector. By using carbon as the deflection electrode, the problem of consumption of the metal film can be solved even when the cleaning process is performed in oxygen plasma. However, in such a conventional configuration, the carbon electrode itself is consumed by the treatment in the oxygen plasma.

For this reason, in the conventional charged particle beam exposure apparatus, it is necessary to frequently replace the electrostatic deflector used. However, such replacement of the electrostatic deflector involves a complicated adjustment process such as alignment of the electron optical system, and as a result, the throughput of the semiconductor device manufacturing process performed using such a charged particle beam exposure apparatus is reduced. Had a substantial decline.

Therefore, the present invention has solved the above-mentioned problems.
It is a general object to provide a new and useful charged particle beam exposure apparatus, an electrostatic deflector, and a method for manufacturing the same.

A more specific object of the present invention is to provide an electrostatic deflector made of a conductive material which has an appropriate specific resistance and is stable to oxygen plasma processing, and a method of manufacturing such an electrostatic deflector. A charged particle beam exposure apparatus using an electrostatic deflector is provided.

[0017]

The present invention solves the above problems,
For example, an electrostatic deflector of a charged particle beam exposure apparatus,
An electrostatic deflector, wherein the deflection electrode constituting the electrostatic deflector is formed of a composite material of non-magnetic oxide particles and inorganic glass, or a charged particle beam exposure using such an electrostatic deflector Solve by device.

The non-magnetic oxide particles and the inorganic glass are stable against oxygen plasma treatment. Therefore, in a charged particle beam exposure apparatus, even when oxygen plasma is formed in a lens barrel for cleaning, The specific resistance of the deflection electrode does not change. Further, for example, the value of the specific resistance of the deflection electrode is about 1 × 10 −1 Ω · cm that can effectively suppress eddy current by appropriately setting a mixing ratio of the nonmagnetic oxide particles and the inorganic glass. Can be set to the value of As the non-magnetic oxide particles, for example, RuO2, ReO2, IrO2, SrVO3, Ca
VO3, LaTiO3, SrMoO3, CaMoO3
SrCrO3, CaCrO3, LaVO3, GdVO
3, SrMnO3, CaMnO3, NiCrO3, Bi
CrO3, LaCrO3, LnCrO3, SrRuO
3, CaRuO3, SrFeO3, BaRuO3, La
MnO3, LnMnO3, LaFeO3, LnFeO
3, LaCoO3, LaRhO3, LaNiO3, Pb
RuO3, Bi2Ru2O7, LaTaO3, SrRu
A material selected from the group consisting of O3, PbRuO3, and BiRuO3 can be used.

In such an electrostatic deflector, for example, a nonmagnetic oxide particle and an inorganic glass powder particle are mixed to form a precursor, which is baked, and the obtained baked body is converted into a desired deflection electrode. Or by mixing non-magnetic oxide particles and inorganic glass powder particles to form a precursor, forming the precursor into a desired deflection electrode shape, and further forming the precursor. The precursor can be manufactured by firing the precursor.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] FIG.
2B is a perspective view and a cross-sectional view showing a configuration of an electrostatic deflector 20 according to an embodiment of the present invention, which is used in place of the electrostatic deflector 17 in the charged particle beam exposure apparatus 10 of FIG. It is. Note that the cross-sectional view in FIG. 2B is a cross-sectional view along line AB in FIG.

Referring to FIGS. 2A and 2B, the electrostatic deflector 20 includes a cylindrical member 21 made of an insulating material such as Al 2 O 3 and an inner wall surface of the cylindrical member 21. It comprises a plurality of electrode members 22 arranged in parallel with each other with a separation groove 23 therebetween, and a charged particle beam such as an electron passes through a substantially cylindrical passage defined by the plurality of electrode members 22. The light passes along a predetermined optical axis EB. At this time, the charged particle beam is deflected from the optical axis EB by applying a drive voltage to a selected portion of the plurality of electrode members 22.

As can be seen from the cross-sectional view of FIG. 2B, each of the electrode members 22 is electrically and spatially separated from each other on the inner wall surface of the cylindrical member 21. The inner walls 21 are formed so as to interlock with each other so as to continuously cover the inner wall surface when viewed from the optical axis EB. Therefore, the inner wall surface of the insulating cylindrical member 21 is exposed, and the problem of charging up by the charged particle beam is avoided. The electrode member 22 includes:
It is fixed on the inner wall surface 21A of the cylindrical member 21 by an adhesive.

FIG. 3 shows the electrode member 2 shown in FIGS. 2 (A) and 2 (B).
2 is shown taken out of the electrostatic deflector 20.

Referring to FIG. 3, although the electrode member 22 has a relatively complicated shape, the particle size shown in FIG.
Hereinafter, preferably, by processing a glass ceramic in which fine particles made of a nonmagnetic conductive oxide such as RuO2 of 0.5 μm or less are dispersed in an inorganic glass matrix such as borosilicate glass or aluminosilicate glass,
Alternatively, it can be produced by firing a precursor shaped into the shape shown in FIG. At that time, by adjusting the ratio of the nonmagnetic conductive oxide fine particles in the glass ceramic, it is possible to realize a specific resistance of about 1 × 10 −1 Ω · cm that can efficiently prevent the generation of eddy current. .

Since the electrode member 22 thus formed is made of a composite material of an oxide and an inorganic glass, when the electrode member 22 is used as the electrostatic deflector 20 in the charged particle exposure apparatus of FIG. Even when cleaning is performed, the electrical characteristics do not deteriorate.

FIG. 5 shows a phase equilibrium diagram of the Ru-O system. However, FIG. 5 shows a phase boundary of the reduction reaction of RuO2 → Ru + O2.

Referring to FIG. 5, the phase equilibrium diagram of the Ru—O system is not completely determined at present, but at a low temperature, even if the oxygen partial pressure PO2 is low, RuO is higher than Ru of the metal phase.
The tendency for 2 to be stable is undoubtedly confirmed. In particular,
In the charged particle exposure apparatus, 10-3 to 10-2 Torr used for the plasma cleaning process, that is, 900 to 100 in a pressure range of about 0.1 to 1 Pa.
Considering that RuO 2 is stable up to a temperature of about 0 ° C., and the temperature actually used in the plasma cleaning process is much lower than this, such RuO 2
It is understood that the electrode member 22 made of a glass ceramic containing as a non-magnetic conductive particle does not deteriorate even if such a plasma cleaning process is repeated.

In the Ru-O system, RuO
An oxidation reaction of 2 + 1 / 2O2 → RuO3 is considered,
RuO3 is a gas at a temperature higher than room temperature, and it has been confirmed that the Gibbs free energy of the oxidation reaction is positive at least at a temperature higher than room temperature. Therefore, RuO2
Is further oxidized in an oxidizing plasma atmosphere to form a gaseous R
It is unlikely that it will be removed as uO3.

FIG. 6 shows a step of forming the electrode member 22 of FIG.

Referring to FIG. 6, in the step S1, nonmagnetic conductive oxide fine particles, typically made of RuO2, and inorganic glass such as borosilicate glass or aluminosilicate glass as shown in FIG. The powder and the binder resin are mixed together, and the mixture is formed into a predetermined shape, for example, a plate-like shape in the step S2.

Further, in the step S3, the plate-like molded body is heat-treated at a temperature of about 1000 ° C. for several hours to obtain a plate-like glass ceramic having a structure in which nonmagnetic conductive oxide fine particles are dispersed in an inorganic glass matrix. Form the body.

Further, in the step S4, by machining the glass ceramic body thus obtained, the electrode member shown in FIG. 3 can be obtained. [Experimental Example 1] RuO2 powder having an average particle diameter of 1 µm was mixed with borosilicate glass powder having an average particle diameter of 3 µm (product name # 7740 of Corning) at a ratio of 20% by volume, To this, acetone and PVB (polyvinyl butyral) resin were added at a ratio of 2% by volume, and mixed in a ball mill for 20 hours.

Next, the slurry obtained in the milling step was dried to remove the solvent, and then pulverized in a grinder to form a mixed glass powder raw material.

Further, the mixed glass powder raw material thus obtained was charged into a mold and pressed into a plate at a pressure of 5 MPa. After firing in air for 2 hours, the obtained glass ceramic body was machined to form the electrode member 22 of FIG.

The electrode member 22 has a size of 1 × 10 2 which is suitable for an electrostatic deflector used in a charged particle beam exposure apparatus.
^It has a specific resistance of ^-2 to 1 × 10 ² Ω · cm. Further, since the electrode members are all made of oxide or oxide glass, they are stable against the cleaning process in oxygen plasma as described above with reference to FIG. [Experimental example 2] RuO2 powder having an average particle size of 0.5 µm;
Glass powder having a BiRuO3 composition having an average particle diameter of 1 μm was mixed with borosilicate glass having an average particle diameter of 3 μm at a volume ratio of 10% and 70%, respectively, and acetone and PVB (polyvinyl) were added thereto. Butyral) resin was added at a ratio of 2% by volume and mixed in a ball mill for 20 hours.

Next, the slurry obtained in the milling step was dried to remove the solvent, and then pulverized in a grinder to form a mixed glass powder raw material.

Further, the mixed glass powder raw material thus obtained was charged into a mold and pressed into a plate at a pressure of 5 MPa. After firing for 2 hours in air, 10% O2
Was fired at 950 ° C. for about 5 hours under a pressure of about 200 GPa or about 2,000 atm in an Ar atmosphere containing. Further, the obtained glass ceramic body was machined to form the electrode member 22 of FIG.

The electrode member 22 has a size of about 1 × 1 suitable for an electrostatic deflector used in a charged particle beam exposure apparatus.
It has a specific resistance of 0 ⁻¹ to 1 × 10 ⁻² Ω · cm. Further, since the electrode members are all made of oxide or oxide glass, they are stable against the cleaning process in oxygen plasma as described above with reference to FIG. [Experimental example 3] LaTaO3 powder having an average particle size of 1 µm;
Borosilicate glass powder having an average particle size of 2 μm and a softening point of about 800 ° C., and an average particle size of 3 μm and about 1100 °
Aluminosilicate glass powder having a softening point of C is mixed at a volume ratio of 60%, 30% and 10%, respectively, and acetone and PVB (polyvinyl butyral) resin are mixed at a volume ratio of 2%. And mixed in a ball mill for 20 hours.

Next, the slurry obtained in the milling step was dried to remove the solvent, and then pulverized to form a mixed glass powder raw material.

Further, the mixed glass powder raw material thus obtained was charged into a mold, and pressed into a plate at a pressure of 5 MPa. After firing in air for 5 hours, the obtained glass ceramic body was machined to form the electrode member 22 of FIG.

The electrode member 22 has a size of 1 × 10 4 suitable for an electrostatic deflector used in a charged particle beam exposure apparatus.
^It has a specific resistance in the range of ^-1 to 1 × 10 ^-2 Ω · cm. Further, since the electrode members are all made of oxide or oxide glass, they are stable against the cleaning process in oxygen plasma as described above with reference to FIG. [Experimental Example 4] RuO2 powder having an average particle size of 1 μm, RuO powder having an average particle size of 2 μm, and approximately 8 μm having an average particle size of 2 μm
Borosilicate glass powder having a softening point of 00 ° C. and aluminosilicate glass powder having an average particle size of 3 μm and a softening point of about 1100 ° C. were respectively 15% by volume,
5%, 40%, and 40% were mixed, and acetone and PVB (polyvinyl butyral) resin were added thereto at a volume ratio of 2%, and mixed in a ball mill.
Mix for 0 hours.

Next, the slurry obtained in the milling step was dried to remove the solvent, and then pulverized in a grinder to form a mixed glass powder raw material.

Further, the mixed glass powder raw material thus obtained was charged into a mold and pressed into a plate at a pressure of 5 MPa. After firing in air for 5 hours, the obtained glass ceramic body was machined to form the electrode member 22 of FIG.

Table 1 below shows that the substrate 13 when the electrode member 22 according to Experimental Example 4 is used as the electrostatic deflector 20 in the charged particle beam exposure apparatus 10 shown in FIG.
The response characteristics of the electron beam observed above were measured using the electrode member 2.
2 is a conventional Al2O3.TiC ceramic (conventional electrode material 1), and the electrode member 22 is a conventional Al2O3.TiC ceramic of 1 μm Pt.
This is shown in comparison with the case where a material covered with a film is used (conventional electrode material 2).

[0045]

[Table 1] Referring to Table 1, when the conventional electrode material 1 was used,
When the specific resistance is too large, it takes 1000 μsec for the electron beam to be displaced by 100 μm on the substrate 13.
Seconds. On the other hand, when the electrode member 22 according to Experimental Example 4 is used, the time required for the displacement of the electron beam by 100 μm is reduced to 50 μsec. That is, by using the electrode member using the electrode material according to the present invention as the electrostatic deflector 20 instead of the electrostatic deflector 17 in the charged particle beam exposure apparatus 10 of FIG. 1, the specific resistance of the electrode member is optimized. The electron beam exposure apparatus 10
Can be improved in drawing speed.

Further, Table 1 shows the response time after the cleaning process using oxygen plasma was performed for 2 minutes and 180 minutes in the charged particle beam exposure apparatus having such an electrostatic deflector. The case where the material 1, the conventional electrode material 2, and the electrode material according to Experimental Example 4 are used will be described.

As can be seen from Table 1, when the conventional electrode material is used, the response speed of the electron beam changes with the plasma treatment. On the other hand, when the electrode material according to the present invention is used, such a change does not occur at all. can not see.

FIG. 7 shows the relationship between the content of the RuO2 fine particles contained in the inorganic glass matrix and the specific resistance of the electrode material according to Experimental Example 1.

Referring to FIG. 7, the specific resistance of the electrode material decreases with an increase in the percentage of the RuO2 fine particles contained therein.
If it is less than 0%, the value of the specific resistance will be
1 × 10 ² Ω · cm or less, which is preferable as a zero deflection electrode,
It can be seen that it can be set to a range of 1 × 10 ^-2 or more.

The non-magnetic oxide particles are not limited to RuO2, but may be ReO2, IrO2, SrVO.
3, CaVO3, LaTiO3, SrMoO3, CaM
oO3, SrCrO3, CaCrO3, LaVO3, G
dVO3, SrMnO3, CaMnO3, NiCrO
3, BiCrO3, LaCrO3, LnCrO3, Sr
RuO3, CaRuO3, SrFeO3, BaRuO
3, LaMnO3, LnMnO3, LaFeO3, Ln
FeO3, LaCoO3, LaRhO3, LaNiO
3, PbRuO3, Bi2Ru2O7, LaTaO3
It can be selected from non-magnetic conductive oxides such as SrRuO3, PbRuO3 and BiRuO3.

Further, the electrode member 22 may be crystallized glass in which the above-mentioned nonmagnetic conductive oxide is dispersed.

It is preferable that the nonmagnetic conductive oxide itself has a specific resistance of about 1 × 10 −4 to 1 × 10 4 Ω · cm. [Second Embodiment] In the process of FIG.
The molded body obtained in the step (b) is limited to a simple plate-shaped or columnar-shaped body. Therefore, the fired body obtained in the firing step of S3 is similarly limited to a simple-shaped body. Was. For this reason, in the step of FIG. 6, in the step of S4, it was necessary to machine the obtained fired body to form the electrode member shown in FIG.

On the other hand, in the step of FIG. 8 according to the second embodiment of the present invention, a non-magnetic conductive oxide such as RuO2 is mixed with the inorganic glass powder in the step of S11 as in the step of S1. In the next step S12, the S1
The glass powder mixture obtained in the first step is supplied to an injection molding machine together with a suitable binder to form a precursor having the shape shown in FIG.

Further, after removing the binder from the precursor by heat treatment, firing is performed in the step of S13.
An electrode member having the shape described above with reference to FIG. 3 is obtained.

Even when such injection molding is performed, machining is indispensable in the step of S14, but the machining in S14 is simple, and as a result, the manufacturing efficiency of the electrode member 22 can be greatly increased. Third Embodiment FIG. 9 shows a configuration of a charged particle beam exposure apparatus 30 according to a third embodiment of the present invention, and FIG. 10 shows a schematic configuration of a stage 31 used in the charged particle beam exposure apparatus 30 of FIG. Show. However, in FIG. 9, the parts described above are denoted by the same reference numerals, and description thereof will be omitted.

Referring to FIG. 9, in the charged particle beam exposure apparatus 30 of this embodiment, not only the electrostatic deflector 20 but also all the electrostatic deflectors, that is, the electrostatic deflector 16B and the electrostatic deflector Electrostatic deflectors 36B and 3 corresponding to 19
Nine deflection electrodes are formed of a composite material of the above-mentioned nonmagnetic conductive oxide and inorganic glass. As shown in FIG. 10, the stage 31 supporting the substrate 12 has a structure in which a coating 31B of a composite material of the nonmagnetic conductive oxide and inorganic glass is formed on a metal base 31A. With this configuration, drift of the electron beam due to eddy current generated in the conventional stage 13 is suppressed, and high-speed, high-precision exposure can be performed.

The coating 31B in the configuration of FIG.
The composite material powder can be easily formed by depositing on the base 31A by plasma spraying. Fourth Embodiment FIG. 11 shows the configuration of a charged particle beam exposure apparatus 40 according to a fourth embodiment of the present invention. However, FIG.
The same reference numerals are given to the parts described above, and the description is omitted.

Referring to FIG. 11, the charged particle beam exposure apparatus 40 has the same configuration as that of the charged particle beam exposure apparatus 30 shown in FIG. 9, except that the lens barrel 10A and the inner wall of the sample chamber connected to the column 10A are A liner 10B of a composite material composed of the nonmagnetic conductive oxide powder and the inorganic glass is formed.

By forming such a liner 10B, the lens barrel 1 is moved along with the magnetic field formed by the electromagnetic deflector 16A, the electromagnetic lenses 14A to 14F, or the electromagnetic deflector 18.
Eddy current flowing through 0 A can be suppressed. Accordingly, the secondary magnetic field due to the eddy current is also suppressed, and the accuracy of the electron beam exposure can be improved.

The liner 10B can be easily formed by performing plasma spraying on the inner wall surface of the lens barrel 10A.

Although the present invention has been described with reference to the preferred embodiments, the present invention is not limited to such specific embodiments, and various modifications and alterations are possible within the scope of the appended claims. is there.

The following is a summary of the present invention.

(1) A vacuum chamber, a charged particle beam source provided in the vacuum chamber, a stage provided in the vacuum chamber and adapted to carry a substrate to be exposed, In the chamber, an electromagnetic lens disposed between the charged particle beam source and the stage, and in the vacuum chamber, an electrostatic deflector disposed between the charged particle beam source and the stage. In the charged particle beam exposure apparatus provided, the electrostatic deflector includes a deflection electrode made of a composite material of nonmagnetic oxide particles and inorganic glass.

(2) The charged particle beam exposure apparatus according to (1), wherein the stage is made of a composite material of non-magnetic oxide particles and inorganic glass.

(3) The charging device according to (1) or (2), wherein the inner wall of the vacuum chamber is covered with a liner made of a composite material of nonmagnetic oxide particles and inorganic glass. Particle beam exposure equipment.

(4) The non-magnetic oxide particles are RuO
2, ReO2, IrO2, SrVO3, CaVO3, L
aTiO3, SrMoO3, CaMoO3, SrCrO
3, CaCrO3, LaVO3, GdVO3, SrMn
O3, CaMnO3, NiCrO3, BiCrO3, L
aCrO3, LnCrO3, SrRuO3, CaRuO
3, SrFeO3, BaRuO3, LaMnO3, Ln
MnO3, LaFeO3, LnFeO3, LaCoO
3, LaRhO3, LaNiO3, PbRuO3, Bi
2Ru2O7, LaTaO3, SrRuO3, PbRu
The charged particle beam exposure apparatus according to any one of (1) to (3), wherein the apparatus is selected from the group consisting of O3 and BiRuO3.

(5) The non-magnetic oxide particles are 1 × 1
The charged particle beam exposure apparatus according to any one of (1) to (4), having an intrinsic specific resistance in a range of 0 to 4 × 1 × 104 Ω · cm.

(6) The nonmagnetic oxide particles have a specific resistance of the deflection electrode of about 10 ⁻² to about 10 ^{−2 with} respect to the inorganic glass.
The charged particle beam exposure apparatus according to any one of (1) to (5), wherein the charged particle beam exposure apparatus is mixed at a ratio within a range of 10 ² Ω · cm.

(7) An electrostatic deflector of a charged particle beam exposure apparatus, wherein the electrostatic deflector includes a deflection electrode, and the deflection electrode is made of a composite material of non-magnetic oxide particles and inorganic glass. An electrostatic deflector characterized by being performed.

(8) The nonmagnetic oxide particles are RuO
2, ReO2, IrO2, SrVO3, CaVO3, L
aTiO3, SrMoO3, CaMoO3, SrCrO
3, CaCrO3, LaVO3, GdVO3, SrMn
O3, CaMnO3, NiCrO3, BiCrO3, L
aCrO3, LnCrO3, SrRuO3, CaRuO
3, SrFeO3, BaRuO3, LaMnO3, Ln
MnO3, LaFeO3, LnFeO3, LaCoO
3, LaRhO3, LaNiO3, PbRuO3, Bi
2Ru2O7, LaTaO3, SrRuO3, PbRu
The electrostatic deflector according to (7), wherein the electrostatic deflector is selected from the group consisting of O3 and BiRuO3.

(9) The non-magnetic oxide particles according to (7) or (8), wherein the non-magnetic oxide particles are particles having an average particle diameter of about 10 μm or less, and are dispersed in the inorganic glass. Electro-deflector.

(10) The nonmagnetic oxide particles are 1 ×
The electrostatic deflector according to any one of claims (7) to (9), having a specific resistivity in a range of 10 -4 to 1 x 104 Ω · cm.

(11) The nonmagnetic oxide particles have a specific resistance of the deflection electrode of about 10 ^{-1 with} respect to the inorganic glass.
The electrostatic deflector according to any one of (7) to (10), wherein the components are mixed at a ratio of about 10 ⁻² Ω · cm to about 10 ⁻² Ω · cm.

(12) The electrostatic deflector according to any one of (7) to (11), wherein the inorganic glass has a composition substantially not containing a volatile metal element.

(13) A method for manufacturing an electrostatic deflector used in a charged particle beam exposure apparatus, wherein the average particle diameter is 10 μm.
m, a step of forming a precursor by mixing non-magnetic oxide particles and inorganic glass powder particles, and a step of firing the precursor to form a fired body; And forming the deflection electrode into a shape of a deflection electrode of the electrostatic deflector.

(14) A method for manufacturing an electrostatic deflector used in a charged particle beam exposure apparatus, wherein the average particle diameter is 10 μm.
m, and mixing non-magnetic oxide particles and inorganic glass powder particles to form a precursor; shaping the precursor into a shape of a deflection electrode of the electrostatic deflector; Baking the precursor thus obtained.

[0077]

According to the present invention, the specific resistance is increased by forming the deflection electrode of the electrostatic deflector used in the charged particle beam exposure apparatus from inorganic glass in which non-magnetic conductive oxide particles are dispersed. , And at the same time, high stability of the electrode material with respect to the cleaning process using plasma can be realized. Such materials include not only deflection electrodes of electrostatic deflectors but also liners of stages and lens barrels.
It can be widely applied to conductive members used in a magnetic field.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a conventional charged particle beam exposure apparatus according to a first embodiment of the present invention;

FIGS. 2A and 2B are diagrams showing a configuration of an electrostatic deflector used in the charged particle beam exposure apparatus of FIG.

FIG. 3 is a diagram showing a configuration of a deflection electrode according to the first embodiment of the present invention.

FIG. 4 shows RuO2 used to form the deflection electrode of FIG.
It is a figure which shows a fine particle.

FIG. 5 is a diagram showing a phase equilibrium diagram of a Ru—O system.

FIG. 6 is a view showing a manufacturing process of the deflection electrode according to the first embodiment of the present invention.

FIG. 7 is a graph showing the relationship between the content of RuO2 fine particles in an inorganic glass and the specific resistance.

FIG. 8 is a diagram illustrating a manufacturing process of a deflection electrode according to a second embodiment of the present invention.

FIG. 9 is a diagram showing a configuration of a charged particle beam exposure apparatus according to a third embodiment of the present invention.

10 is a diagram showing a configuration of a stage used in the charged particle beam exposure apparatus of FIG.

FIG. 11 is a diagram showing a configuration of a charged particle beam exposure apparatus according to a fourth embodiment of the present invention.

[Explanation of symbols]

 10, 30, 40 charged particle beam exposure apparatus 10A lens barrel 10B liner 11 electron beam source 11B immersion lens 12 stage 13 exposed substrate 14A to 14F electromagnetic lens 16 block mask 16A, 18 electromagnetic deflector 16B, 17, 19, 20, 36B, 39 Electrostatic deflector 21 Insulating cylindrical member 22 Deflection electrode 23 Separation groove

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01J 37/147 H01J 37/305 B 37/305 H01L 21/30 541B 541D

Claims (4)

[Claims] A vacuum chamber; a charged particle beam source disposed in the vacuum chamber; a stage disposed in the vacuum chamber and adapted to carry a substrate to be exposed; And an electromagnetic lens disposed between the charged particle beam source and the stage, and an electrostatic deflector disposed between the charged particle beam source and the stage in the vacuum chamber. In the charged particle beam exposure apparatus, the electrostatic deflector includes a deflection electrode composed of a composite material of non-magnetic oxide particles and inorganic glass. 2. An electrostatic deflector for a charged particle beam exposure apparatus, wherein the electrostatic deflector includes a deflection electrode, and the deflection electrode is made of a composite material of non-magnetic oxide particles and inorganic glass. An electrostatic deflector characterized by: 3. A method of manufacturing an electrostatic deflector used in a charged particle beam exposure apparatus, comprising mixing nonmagnetic oxide particles having an average particle diameter of 10 μm or less and inorganic glass powder particles, and forming a precursor. Forming, firing the precursor to form a fired body, and processing the fired body into a shape of a deflection electrode of the electrostatic deflector. Method of manufacturing the vessel. 4. A method for manufacturing an electrostatic deflector used in a charged particle beam exposure apparatus, comprising mixing nonmagnetic oxide particles having an average particle diameter of 10 μm or less and inorganic glass powder particles, and forming a precursor. Forming a precursor, shaping the precursor into a shape of a deflection electrode of the electrostatic deflector, and firing the shaped precursor. .