JP2001217332A - High frequency circuit package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a high frequency circuit package wherein hermetic seal of a high frequency IC chip is enabled, coaxial line connection is easily enabled from a plane circuit, mounting an IC is simply and surely enabled and cost can be reduced. SOLUTION: A high frequency IC chip 1, a line substrate 2 and a capacitor 7 are mounted on a first pedestal 3 having apertures for a high frequency terminal 5 and a DC bias terminal 6. In this case, the high frequency terminal and the DC bias terminal are not formed on the first pedestal 3, so that mounting is easily enabled without using a special jig. The first pedestal 3 on which the IC chip 1 or the like is mounted is mounted on a second pedestal 4 on which the high frequency terminal 5 and the DC bias terminal 6 are formed. The pedestal 3 is so mounted on the pedestal 4 that apertures 9, 11 formed on the pedestal 3 are penetrated with the high frequency terminal 5 and the DC bias terminal 6. The high frequency terminal 5 and the DC bias terminal 6 are connected with the line substrate 2 and the capacitor 7, and a lid 8 covers the pedestal 3 and is connected with the pedestal 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a package for a millimeter wave device, that is, a high-frequency circuit package.

[0002]

2. Description of the Related Art An example of a conventional high-frequency circuit package is disclosed in Japanese Patent Application Laid-Open No. 10-65038. The package for a millimeter wave device described in Japanese Patent Application Laid-Open No. H10-65038 is provided at the center of the upper surface of a pedestal.
A high-frequency IC chip operating in a millimeter wave band is mounted, and line substrates having lines respectively connected to the high-frequency IC chip are mounted on both left and right sides of the upper surface of the pedestal. Then, the line substrate and the high frequency I
A lid is provided to cover and seal the C chip. Further, a waveguide input / output section comprising openings vertically penetrating the pedestal near both ends of the pedestal, and waveguides comprising waveguide end portions connected above the waveguide input / output sections are formed, respectively. And the waveguide are connected by an E-plane probe, and the left and right line substrates are mounted so as to cover the left and right openings on the upper surface of the pedestal, respectively.

[0003] Japanese Laid-Open Patent Publication No. 8-114667 describes a radar module. The radar module includes a planar array antenna, and a transmitting / receiving unit that supplies a signal to be radiated to the planar array antenna and receives a signal received by the planar array antenna.

Further, in this radar module, a delay line is inserted between the planar array antenna and the transmitting / receiving section, and the delay line is arranged on the back surface of the substrate on which the planar array antenna is formed, and High frequency connection.

As another example of a high-frequency circuit package,
JP-A-8-316356, JP-A-6-25261
4, JP-A-5-206710, JP-A-2-206710
48801 and JP-A-62-29202.

[0006]

Conventionally, as described above, at both ends of a pedestal, a coaxial line input / output unit having an opening vertically penetrating the pedestal is provided, and the pedestal operates in a millimeter wave band. A high-frequency IC chip and a line substrate having a line connected to the high-frequency IC chip are mounted, and the opening of the coaxial line input / output unit is closed using the line substrate or the high-frequency IC chip. Many packages for connecting coaxial lines in such a high frequency band, particularly in a millimeter wave band having a high frequency, have been proposed.

When a coaxial line for high-frequency transmission is formed at both ends of the pedestal, and a high-frequency chip or a line is formed at the center of the pedestal, the presence of the coaxial lines projecting at both ends is caused by the presence of the central portion of the pedestal. The formation of the line to the railway was difficult. For this reason, the formation of the high-frequency chip and the line on the pedestal becomes complicated, and a jig for this is required, so that the assembling process of the high-frequency circuit package is complicated, the processing time is long, and the cost is reduced.

Therefore, it is conceivable to first form a high-frequency chip or a line on the pedestal, and then form coaxial lines at both ends of the pedestal. However, to form a coaxial line,
High heat treatment is required, and the heat at that time may adversely affect the high frequency chip. For this reason, after forming a coaxial line on a pedestal, a high-frequency chip or the like must be formed, and the above problem cannot be solved.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a hermetic sealing of a high-frequency IC chip, a simple connection to a coaxial line from a planar circuit,
An object of the present invention is to realize a high-frequency circuit package capable of reliably mounting an IC and reducing costs.

[0010]

In order to achieve the above object, the present invention is configured as follows. That is, according to the present invention, the pedestal is formed of two flat plates, the high-frequency IC chip is mounted on the first pedestal, and the line board is mounted on the pedestal if necessary, and the opening provided on the second pedestal is closed by the glass sealing material. Part is provided. According to this configuration, assemblability can be improved.

Further, according to the present invention, the high-frequency terminal is coaxially arranged with the opening (center conductor), and the groove of the connecting portion is provided coaxially with the opening to reduce high-frequency loss. That is, the present invention is configured as follows.

(1) In a high-frequency circuit package, a high-frequency IC chip operating in a high-frequency band, a line substrate having a line connected to the high-frequency IC chip, and the high-frequency IC
A first pedestal mounting a C chip and the line substrate thereon and having a plurality of first openings; and a second pedestal corresponding to the first openings.
And the high frequency I through the first opening.
An element terminal connected to the C chip and a high-frequency terminal connected to the line substrate are formed in the second opening, and a second pedestal integrated with the first pedestal, And a lid for covering and sealing the line substrate and the high-frequency IC chip on the second pedestal.

(2) In a high-frequency circuit package, a high-frequency IC chip operating in a high-frequency band and the high-frequency IC
A first base on which the chip is mounted and having a plurality of first openings; and a second opening corresponding to the first opening, penetrating through the first opening and connected to the high-frequency IC chip An element terminal to be formed is formed in the second opening, and a second pedestal integrated with the first pedestal, and a high frequency IC chip is sealed over the integrated first and second pedestals. And a lid for stopping.

(3) In a high-frequency circuit package, a plurality of high-frequency IC chips operating in a high-frequency band and a high-frequency IC
A plurality of line substrates having lines connected to the C chip;
A first pedestal mounting the high-frequency IC chip and the line substrate and having a plurality of first openings; and a second opening corresponding to the first openings, and penetrating through the first openings. An element terminal connected to the high-frequency IC chip and a high-frequency terminal connected to the line substrate are formed in the second opening, and are integrated with a second pedestal integrated with the first pedestal. And a lid for covering and sealing the line substrate and the high-frequency IC chip on the first and second pedestals.

(4) Preferably, (1) to (3) above
In the above, the high-frequency terminal functions as a high-frequency terminal integrally with the wall surface of the opening, and the high-frequency terminal is disposed at the center of the opening, and has a circular groove communicating with the opening of the first pedestal. , Formed on one or both of the first pedestal and the second pedestal.

(5) Preferably, in the above (4), the groove is formed on a plane of the pedestal by λ / 4 (where λ is a high frequency I
(The wavelength of the radio wave of the frequency output by the C chip), and is formed continuously with a length of λ / 4 in the longitudinal direction of one of the first pedestal and the second pedestal.

(6) Preferably, in the above (1) to (5), an antenna base is formed on the second pedestal on a surface opposite to the first pedestal, and Then, an antenna is formed and the element terminals are joined.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A high-frequency circuit package according to one embodiment of the present invention will be described below with reference to the accompanying drawings. 1, 2, and 3 are an internal plan view, a longitudinal sectional view, and an exploded perspective view of a high-frequency circuit package according to a first embodiment of the present invention.

In FIGS. 1, 2 and 3, the high-frequency circuit package includes a high-frequency IC chip 1, a line board 2, a first
Pedestal 3, second pedestal 4, high-frequency terminal 5, DC bias terminal 6, capacitor 7, and lid 8.

The high-frequency IC chip 1 and the line board 2 are mounted on a first pedestal 3. In the first pedestal 3 and the second pedestal 4, openings 9, 10 and DC which penetrate the high-frequency terminal 5 are respectively provided at positions corresponding to the high-frequency terminal 5.
Openings 11 and 12 through which the bias terminal 6 passes are formed.

As will be described later, the opening 1 on the second pedestal
Reference numerals 0 and 12 are closed by a glass material 13 to fix the high-frequency terminal 5 and the DC bias terminal 6. On the line substrate 2, a line 14 (such as a microstrip line shown in FIG. 4) for transmitting a high frequency by a conductor is formed on the upper surface.

The high-frequency terminal 5 forms a coaxial line having the high-frequency terminal 5 as a central conductor and the first pedestal 3 as an outer conductor. Form a coaxial line having the high-frequency terminal 5 as a central conductor, the second pedestal 4 as an outer conductor, and the glass material 13 as a dielectric.

The high-frequency port of the high-frequency IC chip 1 is connected to a line 14 provided on the line substrate 2 by a bonding wire or the like, and the high-frequency terminal 5 is connected to the line 14 by a solder or a bonding wire to externally transmit a high frequency. It is a terminal to take out or a terminal to take in external high frequency.

The DC bias terminal 6 is connected to the DC bias port of the high-frequency IC chip 1 via a capacitor 7 via a bonding wire, and supplies a bias voltage to the high-frequency IC chip from outside.

The second pedestal 4 is larger than the first pedestal 3 and covers the line base 2 and the high-frequency IC chip 1 mounted on the first pedestal 3 on the second pedestal 4 and seals the lid 8. Is provided. That is, the second base 4 and the lid 8 hermetically seal the high-frequency IC chip 1 and the like.

In FIG. 3, the lid 8 and the high frequency I
C-chip 1 and line substrate 2, first pedestal 3 having a plurality of openings 9, 11, and second pedestal 4 having high-frequency terminal 5 and DC bias terminal 6 fixed by glass material 13
Are prepared, assembled and integrated.

As described above, when the high-frequency terminals 5 are present on the pedestal 3, the jig or the mounting device and the terminals 5 are buffered at the time of mounting components or at the time of applying an adhesive for bonding components, so that the high-frequency terminals 5 Although it becomes difficult to mount the IC chip 1, the line board 2, and the capacitor 7, according to the present invention, the first
By using the pedestal 3 and the second pedestal 4, the high-frequency IC chip 1, the line board 2, and the capacitor 7 can be easily mounted on the first pedestal 3, which is a flat plate without the high-frequency terminal 5.

That is, in the first embodiment of the present invention, an opening for the high-frequency terminal 5 is formed, but the high-frequency IC is mounted on the first pedestal 3 where the high-frequency terminal 5 is not formed.
After mounting the chip 1, the line board 2, and the capacitor 7, the pedestal 3 and the second pedestal 4 on which the high-frequency terminal 5 is formed in advance are assembled.

Therefore, it is possible to realize a high-frequency circuit package in which the high-frequency IC chip can be airtight, a coaxial line can be easily connected from a planar circuit, the IC can be easily and reliably mounted, and the cost can be reduced.

FIG. 4 is a partial cross-sectional view for explaining an example of a method of connecting the upper conductor 14 and the high-frequency terminal 5. This figure 4
Is a method of connecting the high-frequency terminal 5 to the line substrate 2 including the upper conductor (pattern) 14, the rear conductor 15, and the dielectric substrate 16 forming the transmission line by the solder 17.

FIG. 5 is a partial cross-sectional view for explaining another example of a method of connecting the upper conductor 14 and the high-frequency terminal 5. In the method shown in FIG. 5, the high-frequency terminal 5 is connected to the bonding wire 1.
8 is a method of connecting to the upper surface conductor 14 of the line board 2.

FIG. 6 is a partial cross-sectional view illustrating still another example of a method of connecting the upper conductor 14 and the high-frequency terminal 5. The method shown in FIG. 6 uses the upper surface conductor 14 and the line board 2
In this method, the high-frequency terminal 5 and the through-hole of the high-frequency terminal 5 are metallized by plating or the like, and the line substrate 2 and the high-frequency terminal 5 are connected or connected by high-frequency coupling.

FIG. 7 is a detailed view of a portion A in FIG. 2, wherein the first pedestal 3, which is an outer conductor forming portion having the high-frequency terminal 5 as a central conductor, in the first pedestal 3 and the second pedestal 4. , A contact portion with the second pedestal 4. FIG. 8 is an exploded perspective view of the portion of the pedestal 4 shown in FIG.

7 and 8, high-frequency input and output have a coaxial structure, and in the first pedestal 3, the high-frequency terminal 5 is a central conductor, and the opening 9 of the first pedestal 3 is an outer conductor. Is formed. Further, in the second pedestal 4, the high-frequency terminal 5 is a central conductor, the opening 11 of the second pedestal 4 is an outer conductor, and the glass material 13 is a dielectric.

The openings 9 and 11 are arranged concentrically at the center of the high-frequency terminal 5. Further, the diameters of the openings 9 and 11 are designed so that the characteristic impedance of the coaxial line structure is arbitrary, and need not be the same. A concentric groove 19 of the opening 9 is formed in the first pedestal 3 over the length of λ / 4, and a concentric groove 20 is formed in the pedestal 4 so as to continue from the groove 19. / 4. Here, λ is the wavelength of the radio wave at the center frequency output from the high-frequency IC chip 1.

By providing the grooves 19 and 20, it is possible to suppress the loss at the outer conductor connection portion of the coaxial line structure.

FIG. 9 is a diagram showing another example of the contact portion between the first pedestal 3 and the second pedestal 4. The difference from the one shown in FIG. It is provided on only one pedestal 3. The other parts are the same as those in the example shown in FIG. 7, and the detailed description is omitted.

The groove 20 may be formed on both the first pedestal 3 and the second pedestal 4.

FIGS. 10 and 11 are an internal plan view and a vertical sectional view of a second embodiment of the present invention, showing an example of a high-frequency circuit package as a radar to which an antenna is connected.
The difference from the first embodiment described above is that a plurality of high-frequency IC chips 1a, 1b, and 1c are mounted on a first pedestal 3, and a plurality of line substrates 2 are connected to each other.
a, 2b, and 2c are mounted, and a plurality of DCs corresponding to the chip
A bias terminal 6 (partly used as an IF terminal) is provided.

An antenna base 21 is provided on the second pedestal 4 on the side opposite to the first pedestal 3, and an antenna (transmission) 22 and an antenna (reception) 23 are mounted on the antenna base 21. The high-frequency terminal 5 is connected to the feeding points of the antennas 22 and 23.

The electromagnetic wave oscillated from the oscillator IC chip 1c is distributed by the line board 2b, one of which is amplified by the amplifier IC chip 1a and fed to the antenna 22 via the high frequency terminal 5 and the line board 2a to transmit the radio wave. .

This radio wave is reflected by the object and slightly deviates from the frequency of the transmitted radio wave. This radio wave is transmitted to antenna 23
And sent to the mixer IC chip 1b via the high-frequency terminal 5 and the line board 2c. The mixer IC chip 1b mixes with the other electromagnetic wave distributed by the line substrate 2b to generate an intermediate frequency. This intermediate frequency is
The signal is transmitted to the outside of the package by a terminal, and signal processing is performed by a microcomputer or the like, and the distance such as the relative speed of the object is obtained. In the second embodiment, the same effect as in the first embodiment can be obtained.

FIG. 12 is an internal plan view of the third embodiment of the present invention. This third embodiment uses a high frequency terminal 5 and a DC bias terminal 6 without using a line substrate.
Are directly bonded to the high-frequency IC chip 1 using bonding wires. The configuration of using the first pedestal 3 and the second pedestal 4 to have a closing portion for the opening and the like is the same as in the first and second embodiments described above. In the third embodiment, the same effect as in the first embodiment can be obtained.

As another embodiment of the present invention, there is a method for manufacturing a high-frequency circuit package described below. This will be described with reference to FIG. First, a high frequency IC chip 1 operating in a high frequency band and a line connected to the high frequency IC chip 1 are provided on a first pedestal 3 in which an opening through which a high frequency terminal 5 and a DC bias terminal 6 pass is formed. The line board 2 and the capacitor 7 are mounted.

Next, the first pedestal 3 on which the high-frequency IC chip 1 and the like are mounted is connected to the high-frequency terminal 5 and the DC bias terminal 6.
Is mounted on the second pedestal 4 on which is formed. In this case, the high frequency terminal 5 and the DC bias terminal 6 pass through the openings 9 and 11 formed in the first pedestal 3 so that the first pedestal 3
Is mounted on the second pedestal 4.

Subsequently, the high-frequency terminal 5 is connected to the line substrate 2 and the DC bias terminal 6 is connected to the capacitor 7.

Then, the lid 8 covers the first pedestal 3 and is connected to the second pedestal 4.

As described above, the high-frequency IC is mounted on the flat first base 3 on which no high-frequency terminal or bias terminal is formed.
The chip 1 and the like are mounted. In this case, since the first base 3 has no high-frequency terminal or bias terminal,
The high-frequency IC chip 1 and the like can be easily mounted on the first pedestal 3 without requiring a special jig. Therefore, it is possible to realize a method of manufacturing a high-frequency circuit package in which a high-frequency IC chip can be hermetically sealed, a coaxial line can be easily connected from a planar circuit, an IC can be easily and reliably mounted, and cost can be reduced.

The above-described high-frequency circuit package of the present invention is applied to a high-frequency terminal such as a vehicle-mounted high-frequency laser circuit package for collision prevention, which has a high-frequency terminal and a high-frequency IC chip, and requires airtightness. be able to.

[0050]

According to the present invention, there is provided a high-frequency circuit package capable of hermetically sealing a high-frequency IC chip, easily connecting a coaxial line from a planar circuit, performing simple and reliable IC mounting, and reducing costs. The manufacturing method can be realized.

Further, according to the structure of the connecting portion between the first pedestal and the second pedestal, which is the outer conductor of the high-frequency terminal forming the coaxial line of the present invention, the loss of high-frequency transmission can be reduced.

[Brief description of the drawings]

FIG. 1 is an internal plan view of a high-frequency circuit package according to a first embodiment of the present invention.

FIG. 2 is a longitudinal sectional view of the high-frequency circuit package according to the first embodiment of the present invention.

FIG. 3 is an exploded perspective view of the high-frequency circuit package according to the first embodiment of the present invention.

FIG. 4 is a partial cross-sectional view illustrating an example of a method of connecting an upper conductor and a high-frequency terminal.

FIG. 5 is a partial cross-sectional view illustrating another example of a method of connecting an upper conductor and a high-frequency terminal.

FIG. 6 is a partial cross-sectional view illustrating still another example of a method of connecting an upper conductor and a high-frequency terminal.

FIG. 7 is a detail of a portion A in FIG. 2, showing a contact portion between a first pedestal, which is an outer conductor forming portion having a high-frequency terminal as a central conductor, and a second pedestal.

8 is an exploded perspective view of a portion of the pedestal shown in FIG. 7;

FIG. 9 is a detail of a portion A in FIG. 2, showing another example of a contact portion between a first pedestal, which is an outer conductor forming portion having a high-frequency terminal as a central conductor, and a second pedestal.

FIG. 10 is an internal plan view of a second embodiment of the present invention.

FIG. 11 is a longitudinal sectional view of a second embodiment of the present invention.

FIG. 12 is an internal plan view of a third embodiment of the present invention.

[Description of Signs] 1 High-frequency IC chip 2 Line board 3 First pedestal 4 Second pedestal 5 High-frequency terminal (coaxial center conductor) 6 DC bias terminal 7 Capacitor 8 Lid 9, 10 Opening 11, 12 Opening 13 Glass material 14 Line top conductor 15 Line back conductor 16 Dielectric 17 Solder 18 Bonding wire 19, 20 Groove 21 Antenna base 22 Antenna (transmitting) 23 Antenna (receiving)

Claims (6)

[Claims] 1. A high-frequency IC chip operating in a high-frequency band, a line substrate having a line connected to the high-frequency IC chip, and a second substrate having the high-frequency IC chip and the line substrate mounted thereon and having a plurality of first openings. One pedestal, and a second opening corresponding to the first opening.
An element terminal connected to the high-frequency IC chip through the opening and a high-frequency terminal connected to the line substrate are formed in the second opening, and are integrated with the first pedestal. And a lid for covering and sealing the line substrate and the high-frequency IC chip on the integrated first and second pedestals. 2. A high-frequency IC chip operating in a high-frequency band, a first pedestal mounting the high-frequency IC chip and having a plurality of first openings, and a second opening corresponding to the first opening. Having the first
An element terminal connected to the high-frequency IC chip through the opening is formed in the second opening, and a second pedestal integrated with the first pedestal; A cover for covering and sealing the high-frequency IC chip on the second base. 3. A plurality of high-frequency IC chips operating in a high-frequency band, a plurality of line substrates having lines connected to the high-frequency IC chips, a plurality of first high-frequency IC chips and a plurality of first line substrates mounted thereon. A first pedestal having an opening; a second opening corresponding to the first opening;
An element terminal connected to the high-frequency IC chip through the opening and a high-frequency terminal connected to the line substrate are formed in the second opening, and are integrated with the first pedestal. And a lid for covering and sealing the line substrate and the high-frequency IC chip on the integrated first and second pedestals. 4. The high-frequency circuit package according to claim 1, wherein the high-frequency terminal functions as a high-frequency terminal integrally with a wall surface of the opening. A high-frequency wave, wherein a circular groove arranged at the center and communicating with the opening of the first pedestal is formed in one or both of the first pedestal and the second pedestal. Circuit package. 5. The high-frequency circuit package according to claim 4, wherein the groove has a length of λ / 4 (where λ is the wavelength of a radio wave of a frequency output by the high-frequency IC chip) on the plane of the pedestal. A high-frequency circuit package formed continuously with a length of λ / 4 in the longitudinal direction of one of the first pedestal and the second pedestal. 6. The high frequency circuit package according to claim 1, wherein an antenna base is formed on the second pedestal on a surface opposite to the first pedestal, An antenna is formed on the antenna base, and the element terminals are joined to each other.