JP2001210629A5 - - Google Patents

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Publication number
JP2001210629A5
JP2001210629A5 JP2000358026A JP2000358026A JP2001210629A5 JP 2001210629 A5 JP2001210629 A5 JP 2001210629A5 JP 2000358026 A JP2000358026 A JP 2000358026A JP 2000358026 A JP2000358026 A JP 2000358026A JP 2001210629 A5 JP2001210629 A5 JP 2001210629A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000358026A
Other versions
JP4725873B2 (ja
JP2001210629A (ja
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Priority claimed from US09/449,338 external-priority patent/US6547458B1/en
Application filed filed Critical
Publication of JP2001210629A publication Critical patent/JP2001210629A/ja
Publication of JP2001210629A5 publication Critical patent/JP2001210629A5/ja
Application granted granted Critical
Publication of JP4725873B2 publication Critical patent/JP4725873B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000358026A 1999-11-24 2000-11-24 ウエハ処理システム及びウエハ処理工程を監視する方法 Expired - Lifetime JP4725873B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US449338 1999-11-24
US09/449,338 US6547458B1 (en) 1999-11-24 1999-11-24 Optimized optical system design for endpoint detection

Publications (3)

Publication Number Publication Date
JP2001210629A JP2001210629A (ja) 2001-08-03
JP2001210629A5 true JP2001210629A5 (ja) 2008-01-24
JP4725873B2 JP4725873B2 (ja) 2011-07-13

Family

ID=23783782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000358026A Expired - Lifetime JP4725873B2 (ja) 1999-11-24 2000-11-24 ウエハ処理システム及びウエハ処理工程を監視する方法

Country Status (5)

Country Link
US (1) US6547458B1 (ja)
EP (1) EP1104018A3 (ja)
JP (1) JP4725873B2 (ja)
KR (1) KR20010051930A (ja)
TW (1) TW483081B (ja)

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US6863772B2 (en) * 2002-10-09 2005-03-08 Taiwan Semiconductor Manufacturing Co., Ltd Dual-port end point window for plasma etcher
US7892357B2 (en) * 2004-01-12 2011-02-22 Axcelis Technologies, Inc. Gas distribution plate assembly for plasma reactors
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
KR100549955B1 (ko) * 2004-07-20 2006-02-07 삼성전자주식회사 반도체 제조 설비의 식각종말점 검출장치
US7120553B2 (en) * 2004-07-22 2006-10-10 Applied Materials, Inc. Iso-reflectance wavelengths
US7479191B1 (en) 2005-04-22 2009-01-20 Novellus Systems, Inc. Method for endpointing CVD chamber cleans following ultra low-k film treatments
KR100688980B1 (ko) * 2005-07-01 2007-03-08 삼성전자주식회사 플라즈마 모니터링장치와 플라즈마 모니터링 방법
US8262800B1 (en) 2008-02-12 2012-09-11 Novellus Systems, Inc. Methods and apparatus for cleaning deposition reactors
US20110083721A1 (en) * 2008-11-20 2011-04-14 Behzad Imani Concentrating photovoltaic system
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
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JP2012141291A (ja) * 2010-12-16 2012-07-26 Fujifilm Corp 放射線撮影装置
KR102396143B1 (ko) 2018-02-09 2022-05-09 삼성전자주식회사 Oes 장치와 이를 포함하는 플라즈마 처리 장치, 및 반도체 장치의 제조 방법

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