JP2001208708A - 斜出射電子線プローブマイクロx線分析による異物の分析方法およびその装置 - Google Patents

斜出射電子線プローブマイクロx線分析による異物の分析方法およびその装置

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Publication number
JP2001208708A
JP2001208708A JP2000022205A JP2000022205A JP2001208708A JP 2001208708 A JP2001208708 A JP 2001208708A JP 2000022205 A JP2000022205 A JP 2000022205A JP 2000022205 A JP2000022205 A JP 2000022205A JP 2001208708 A JP2001208708 A JP 2001208708A
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Japan
Prior art keywords
sample
characteristic
ray
electron beam
angle
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Pending
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JP2000022205A
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Japanese (ja)
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JP2001208708A5 (OSRAM
Inventor
Koichi Tsuji
幸一 辻
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Japan Science and Technology Agency
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Japan Science and Technology Corp
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Priority to JP2000022205A priority Critical patent/JP2001208708A/ja
Publication of JP2001208708A publication Critical patent/JP2001208708A/ja
Publication of JP2001208708A5 publication Critical patent/JP2001208708A5/ja
Pending legal-status Critical Current

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  • Analysing Materials By The Use Of Radiation (AREA)
JP2000022205A 2000-01-31 2000-01-31 斜出射電子線プローブマイクロx線分析による異物の分析方法およびその装置 Pending JP2001208708A (ja)

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JP2000022205A JP2001208708A (ja) 2000-01-31 2000-01-31 斜出射電子線プローブマイクロx線分析による異物の分析方法およびその装置

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JP2000022205A JP2001208708A (ja) 2000-01-31 2000-01-31 斜出射電子線プローブマイクロx線分析による異物の分析方法およびその装置

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JP2001208708A true JP2001208708A (ja) 2001-08-03
JP2001208708A5 JP2001208708A5 (OSRAM) 2005-10-20

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001235436A (ja) * 2000-02-23 2001-08-31 Japan Science & Technology Corp 斜出射プロトンビーム誘起特性x線分析による試料表面の観察・分析方法およびそのための装置
JP2003098132A (ja) * 2001-09-25 2003-04-03 Sony Corp 試料ホルダ及び試料分析装置
JP2006118940A (ja) * 2004-10-20 2006-05-11 Jeol Ltd 斜出射x線の検出方法及び装置
JP2009042174A (ja) * 2007-08-10 2009-02-26 Sharp Corp 斜出射電子線プローブマイクロx線分析方法およびそれに用いられるプログラム、並びに、斜出射電子線プローブマイクロx線分析装置
JPWO2023145235A1 (OSRAM) * 2022-01-31 2023-08-03
JP7457607B2 (ja) 2020-02-26 2024-03-28 日本電子株式会社 軟x線分光装置および分析方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001235436A (ja) * 2000-02-23 2001-08-31 Japan Science & Technology Corp 斜出射プロトンビーム誘起特性x線分析による試料表面の観察・分析方法およびそのための装置
JP2003098132A (ja) * 2001-09-25 2003-04-03 Sony Corp 試料ホルダ及び試料分析装置
JP2006118940A (ja) * 2004-10-20 2006-05-11 Jeol Ltd 斜出射x線の検出方法及び装置
JP2009042174A (ja) * 2007-08-10 2009-02-26 Sharp Corp 斜出射電子線プローブマイクロx線分析方法およびそれに用いられるプログラム、並びに、斜出射電子線プローブマイクロx線分析装置
JP7457607B2 (ja) 2020-02-26 2024-03-28 日本電子株式会社 軟x線分光装置および分析方法
JPWO2023145236A1 (OSRAM) * 2022-01-31 2023-08-03
JPWO2023145238A1 (OSRAM) * 2022-01-31 2023-08-03
JPWO2023145237A1 (OSRAM) * 2022-01-31 2023-08-03
JPWO2023145235A1 (OSRAM) * 2022-01-31 2023-08-03
JP7615183B2 (ja) 2022-01-31 2025-01-16 キヤノンアネルバ株式会社 検査装置および検査方法
US12241848B2 (en) 2022-01-31 2025-03-04 Canon Anelva Corporation Inspection apparatus and inspection method
JP7667322B2 (ja) 2022-01-31 2025-04-22 キヤノンアネルバ株式会社 検査装置および検査方法
JP7667321B2 (ja) 2022-01-31 2025-04-22 キヤノンアネルバ株式会社 検査装置および検査方法
JP7667882B2 (ja) 2022-01-31 2025-04-23 キヤノンアネルバ株式会社 検査装置および検査方法
JP7667883B2 (ja) 2022-01-31 2025-04-23 キヤノンアネルバ株式会社 検査装置および検査方法

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