JP2001205557A - Polishing device for wafer - Google Patents
Polishing device for waferInfo
- Publication number
- JP2001205557A JP2001205557A JP2000017309A JP2000017309A JP2001205557A JP 2001205557 A JP2001205557 A JP 2001205557A JP 2000017309 A JP2000017309 A JP 2000017309A JP 2000017309 A JP2000017309 A JP 2000017309A JP 2001205557 A JP2001205557 A JP 2001205557A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- holding
- polishing
- elastic suspension
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、研磨装置に関し、
さらに詳細にはウェーハを保持する保持部と、該保持部
に保持されたウェーハの被研磨面を研磨する研磨面が形
成された定盤とを備え、前記保持部と前記定盤とを相対
的に運動させてウェーハの被研磨面を研磨するウェーハ
の研磨装置に関する。例えば半導体チップ製造用のウェ
ーハの被研磨面（以下、「ウェーハ表面」ともいう）を
鏡面研磨するために用いるものがある。TECHNICAL FIELD The present invention relates to a polishing apparatus,
More specifically, a holder for holding the wafer, and a surface plate having a polished surface for polishing a surface to be polished of the wafer held by the holder, a relative position between the holding portion and the surface plate The present invention relates to a wafer polishing apparatus for polishing a polished surface of a wafer by moving the wafer. For example, there is one used for mirror-polishing a surface to be polished (hereinafter, also referred to as a “wafer surface”) of a wafer for manufacturing semiconductor chips.
【０００２】[0002]
【従来の技術】近年、半導体装置の高集積化が進むに伴
い、その基材であるシリコンウェーハ等の平坦度や表面
品質のさらなる向上が求められている。また、そのウェ
ーハ表面にデバイスを形成した際の堆積形成された層間
絶縁膜や金属配線等の研磨においても、一層高精度に平
坦化する要求が高まっている。従って、ウェーハの研磨
装置については、ウェーハの被研磨面を一層高精度に鏡
面研磨できるものが要求されている。このため、従来、
定盤の研磨面の傾斜等に追従してウェーハ表面を均一に
押圧すべく、球座を介し、ウェーハを定盤の研磨面へ加
圧する方式が採用された。しかし、この方式では、凹球
面に対して凸球面が摺動する構造となり、その作動の際
には必ず摩擦力が働くことになる。このように摩擦力が
発生する場合は、微妙な傾き変動に対して好適に追従す
ることが難しく、高精度の研磨には好適に対応できな
い。これに対して、従来のウェーハの研磨装置には、ウ
ェーハ表面の全面を、定盤の研磨面へ均等な圧力で押圧
できるように、ウェーハを保持する保持部にエアバック
機能を備えたものがある。2. Description of the Related Art In recent years, as the degree of integration of semiconductor devices has increased, there has been a demand for further improvement in flatness and surface quality of a silicon wafer or the like as a base material thereof. In addition, there is an increasing demand for flattening with higher precision in polishing an interlayer insulating film, metal wiring, and the like deposited and formed when a device is formed on the wafer surface. Therefore, a wafer polishing apparatus that can mirror-polish the surface to be polished of the wafer with higher precision is required. For this reason,
In order to uniformly press the wafer surface following the inclination of the polished surface of the surface plate, a method of pressing the wafer to the polished surface of the surface plate via a ball seat has been adopted. However, in this method, the convex spherical surface slides on the concave spherical surface, and a frictional force always acts upon the operation. When a frictional force is generated as described above, it is difficult to appropriately follow a slight change in inclination, and it is not possible to suitably cope with high-precision polishing. In contrast, some conventional wafer polishing apparatuses have an airbag function in a holding unit for holding a wafer so that the entire surface of the wafer can be pressed against the polishing surface of the surface plate with a uniform pressure. is there.
【０００３】そのウェーハの研磨装置にかかる保持部の
一例について、図３に基づいて以下に説明する。図３に
示すように、上下方向の軸心を中心に回転（自転）する
定盤５０上には、研磨布５１等が接着されて研磨面５２
が形成され、その上方に、上下方向の軸心を中心に回転
（自転）および上下動可能な保持部６０が設けられてい
る。この保持部６０には、下方に向けて開放する凹部６
２ａが設けられたヘッド部材６２と、ウェーハ１２が保
持される保持面を有するウェーハ保持盤６４と、外周部
６６ｂがヘッド部材６２の外周側壁部６２ｂに固定され
ると共に内周部６６ａがウェーハ保持盤６４の外周部６
４ａに固定されてそのウェーハ保持盤６４を上下方向等
への移動を微小範囲内で許容可能に吊持する板状の弾性
部材６６と、ヘッド部材６２の内部をウェーハ保持盤６
４および板状の弾性部材６６によって画成して設けられ
る密閉空間である圧力室６５とが設けられている。[0003] An example of the holding section of the wafer polishing apparatus will be described below with reference to FIG. As shown in FIG. 3, a polishing pad 51 or the like is adhered to a polishing surface 52 on a surface plate 50 that rotates (rotates) about a vertical axis.
Is formed above, and a holding portion 60 that can rotate (rotate) and move up and down around an axis in the vertical direction is provided. The holding portion 60 has a concave portion 6 that opens downward.
The head member 62 provided with the head member 2a, the wafer holding plate 64 having a holding surface for holding the wafer 12, the outer peripheral portion 66b is fixed to the outer peripheral side wall portion 62b of the head member 62, and the inner peripheral portion 66a holds the wafer. Outer peripheral portion 6 of board 64
A plate-shaped elastic member 66 fixed to the wafer holding plate 4a and suspending the wafer holding plate 64 in the vertical direction or the like within a very small range;
4 and a pressure chamber 65 which is a closed space defined by a plate-shaped elastic member 66.
【０００４】６７はウェーハ吸着用の減圧手段であり、
ウェーハ保持盤６４の保持面である下面に開口した複数
の連通孔６７ａに管路６７ｂを介して連通している。こ
の減圧手段６７により、ウェーハ１２をウェーハ保持盤
６４の保持面に吸着保持できる。また、６８は加圧手段
であり、圧力室６５へ所定圧力の流体を供給し、ウェー
ハ保持盤６４を介してウェーハ１２（ウェーハ表面１２
ａ）を定盤５０の研磨面５２に押圧する。そして、６９
は圧力室の減圧手段であり、圧力室６５を減圧する。ま
た、ヘッド部材６２の内底面から下方へ徐々に縮径する
テーパ状突起された一方のテーパ嵌合部７０（雄型）
と、その一方のテーパ嵌合部７０に対面してウェーハ保
持盤６４上面に設けられ、圧力室の減圧手段６９によっ
て圧力室６５が減圧された際には吸引されて、一方のテ
ーパ嵌合部７０に嵌まるように、その一方のテーパ嵌合
部７０とは逆のテーパに形成された他方のテーパ嵌合部
７２（雌型）とを備える。[0004] Reference numeral 67 denotes a decompression means for adsorbing a wafer.
The plurality of communication holes 67a opened on the lower surface, which is the holding surface of the wafer holding board 64, communicate with each other via a conduit 67b. The wafer 12 can be suction-held on the holding surface of the wafer holding board 64 by the pressure reducing means 67. Reference numeral 68 denotes a pressurizing unit that supplies a fluid at a predetermined pressure to the pressure chamber 65, and supplies the wafer 12 (the wafer surface 12) through the wafer holding plate 64.
a) is pressed against the polishing surface 52 of the platen 50. And 69
Is a pressure reducing means for the pressure chamber, and reduces the pressure in the pressure chamber 65. Also, one tapered fitting portion 70 (male type) having a tapered projection whose diameter gradually decreases downward from the inner bottom surface of the head member 62.
The pressure chamber 65 is provided on the upper surface of the wafer holding plate 64 so as to face the one taper fitting portion 70, and is sucked when the pressure chamber 65 is depressurized by the pressure chamber depressurizing means 69. The other taper fitting portion 72 (female type) is formed to have a taper opposite to that of the one taper fitting portion 70 so as to fit into the taper fitting portion 70.
【０００５】この研磨装置によれば、ウェーハ保持盤６
４に吸着作用で保持されたウェーハの被研磨面（ウェー
ハ表面１２ａ）は、ゴム板等から成る板状の弾性部材６
６のエアバック作用によって、研磨面５２の傾斜等に素
早く追随できると共に、そのようにウェーハ表面１２ａ
が研磨面５２の傾斜等に追随した状態においても、ウェ
ーハ表面１２ａ全面を研磨面５２に均等な圧力で押圧で
きる。このため、ウェーハ表面１２ａを均一且つ好適に
鏡面研磨できる。また、一方のテーパ嵌合部７０（雄
型）と他方のテーパ嵌合部７２（雌型）との嵌合によっ
て、ウェーハ保持盤６４を精度良く位置決めしてウェー
ハ１２の貼付精度を向上できるため、ウェーハの研磨精
度を向上できると共に、自動化に好適に対応できる。According to this polishing apparatus, the wafer holding plate 6
The surface to be polished (wafer surface 12a) of the wafer held by the suction action on the wafer 4 has a plate-like elastic member 6 made of a rubber plate or the like.
6 can quickly follow the inclination of the polishing surface 52, etc.
Can also press the entire surface 12a of the wafer 12a against the polished surface 52 with a uniform pressure, even in a state following the inclination of the polished surface 52 or the like. Therefore, the wafer surface 12a can be uniformly and suitably mirror-polished. In addition, by fitting one tapered fitting portion 70 (male type) and the other tapered fitting portion 72 (female type), the wafer holding plate 64 can be positioned with high accuracy, and the bonding accuracy of the wafer 12 can be improved. In addition, the polishing accuracy of the wafer can be improved, and it is possible to suitably cope with automation.
【０００６】[0006]
【発明が解決しようとする課題】また、上記のウェーハ
の研磨装置によれば、板状の弾性部材６６が、ウェーハ
保持盤６４に保持されるウェーハ１２に接近する位置に
配されている。このため、板状の弾性部材６６は、ウェ
ーハ保持盤６４を重心低く安定的に支持でき、ウェーハ
保持盤６４が不必要に大きく傾くことを理論的には防止
できる。しかしながら、上記のウェーハの研磨装置で
は、現実的には、板状の弾性部材６６が、一枚の皮膜状
に形成されたものであり、ウェーハ保持盤６４を確実に
安定的に保持することは困難であるという課題があっ
た。Further, according to the above-described wafer polishing apparatus, the plate-like elastic member 66 is arranged at a position approaching the wafer 12 held by the wafer holding board 64. For this reason, the plate-shaped elastic member 66 can stably support the wafer holding plate 64 at a low center of gravity, and can theoretically prevent the wafer holding plate 64 from being unnecessarily largely inclined. However, in the above-described wafer polishing apparatus, the plate-like elastic member 66 is actually formed as a single film, and the wafer holding plate 64 can be reliably and stably held. There was a problem that it was difficult.
【０００７】これに対しては、板状の弾性部材６６をウ
ェーハ保持盤６４の上側に配してウェーハ保持盤６４を
吊持し、ウェーハ保持盤６４の下側の外周に、内周で接
触してガイドするテフロン製のガイドリング、或いはガ
イド用Ｏ−リングで、ウェーハ保持盤６４が不必要に大
きく傾くことを防止する構造が提案されている（特開平
６−１２６６１５号参照）。この構造によれば、ウェー
ハ保持盤６４を、上側で支持して下側で振れを防止する
ことになって、２点で保持することができる。従って、
ウェーハ保持盤６４を、より安定的に保持することがで
きる。しかしながら、テフロン製のガイドリング、或い
はガイド用Ｏ−リングの内周面と、ウェーハ保持盤６４
の外周面との接触による摩擦抵抗が発生するため、微妙
な傾き変動に対して好適に追従することが難しく、高精
度の研磨には好適に対応することが難しいという課題が
あった。In order to cope with this, a plate-like elastic member 66 is arranged above the wafer holding plate 64 to suspend the wafer holding plate 64, and makes contact with the lower outer periphery of the wafer holding plate 64 at the inner periphery. A structure has been proposed in which a Teflon-made guide ring or O-ring for guiding is used to prevent the wafer holding plate 64 from being unnecessarily greatly inclined (see JP-A-6-126615). According to this structure, the wafer holding plate 64 is supported on the upper side and shake is prevented on the lower side, so that the wafer holding plate 64 can be held at two points. Therefore,
The wafer holding plate 64 can be held more stably. However, the inner peripheral surface of the Teflon guide ring or the O-ring for guide and the wafer holding plate 64
Therefore, frictional resistance is generated due to contact with the outer peripheral surface, and it is difficult to appropriately follow minute tilt fluctuations, and it is difficult to suitably cope with high-precision polishing.
【０００８】そこで、本発明の目的は、ウェーハ保持盤
を介してウェーハを定盤の研磨面に押圧する際に、微妙
な傾き変動に対して好適に追従することができると共
に、より安定的にウェーハ保持盤を保持し、ウェーハの
研磨精度を向上させることができるウェーハの研磨装置
を提供することにある。Accordingly, an object of the present invention is to provide a method of appropriately following a fine tilt change when a wafer is pressed against a polishing surface of a surface plate via a wafer holding plate, and more stably. An object of the present invention is to provide a wafer polishing apparatus capable of holding a wafer holding plate and improving the polishing accuracy of the wafer.
【０００９】[0009]
【課題を解決するための手段】上記の目的を達成するた
め、本発明は次の構成を備える。すなわち、本発明は、
ウェーハを保持する保持部と、該保持部に保持されたウ
ェーハの被研磨面を研磨する研磨面が形成された定盤と
を備え、前記保持部と前記定盤とを相対的に運動させて
ウェーハの被研磨面を研磨するウェーハの研磨装置にお
いて、前記保持部が、凹部が前記定盤の研磨面に向かっ
て開かれて設けられたヘッド部材と、該ヘッド部材の前
記凹部内に配され、ウェーハが保持される保持面を有す
るウェーハ保持盤と、前記ヘッド部材と前記ウェーハ保
持盤との間に両者に固定されて配されると共に前記保持
面に近い下側に配され、前記ウェーハ保持盤を、ヘッド
部材に対して上下方向等へ移動することを許容して吊持
する下側の弾性吊持部材と、前記ヘッド部材と前記ウェ
ーハ保持盤との間に両者に固定されると共に前記下側の
弾性吊持部材よりも上側に配され、前記ウェーハ保持盤
を、ヘッド部材に対して上下方向等へ移動することを許
容して吊持する上側の弾性吊持部材と、前記下側の弾性
吊持部材と前記上側の弾性吊持部材の少なくとも一方に
よって、前記ヘッド部材の内部が前記ウェーハ保持盤と
共に画され、シールされて形成されるウェーハ加圧用圧
力室と、前記ウェーハ加圧用圧力室へ圧力流体を供給
し、前記ウェーハ保持盤を介してウェーハを前記定盤の
研磨面に押圧するための加圧手段とを具備する。To achieve the above object, the present invention has the following arrangement. That is, the present invention
A holding unit for holding the wafer, a platen having a polished surface for polishing the surface to be polished of the wafer held by the holding unit, and relatively moving the holding unit and the platen In a wafer polishing apparatus for polishing a surface to be polished of a wafer, the holding portion is provided in a head member provided with a concave portion opened toward the polishing surface of the surface plate, and is disposed in the concave portion of the head member. A wafer holding plate having a holding surface on which a wafer is held, and between the head member and the wafer holding plate fixedly disposed to both, and disposed below and near the holding surface; The board is fixed to both the lower elastic suspension member that suspends the head member by allowing it to move in the vertical direction or the like with respect to the head member, and between the head member and the wafer holding plate. From the lower elastic suspension member An upper elastic suspending member arranged on the upper side and suspending the wafer holding plate by allowing it to move in a vertical direction or the like with respect to a head member, and the lower elastic suspending member and the upper elastic suspending member. By at least one of the elastic suspension members, the interior of the head member is defined together with the wafer holding plate, and a pressure chamber for pressurizing the wafer formed by sealing, and supplying a pressure fluid to the pressure chamber for pressurizing the wafer, Pressurizing means for pressing the wafer against the polishing surface of the platen via the wafer holding plate.
【００１０】また、前記下側の弾性吊持部材と前記上側
の弾性吊持部材が、皮膜状の弾性体によって設けられて
いることで、ウェーハ保持盤の微小な傾きに対応する追
従性を向上できると共に、ウェーハ保持盤をその全周に
ついて均一に安定的に保持することができ、研磨精度を
向上させることができる。In addition, the lower elastic suspension member and the upper elastic suspension member are provided by a film-like elastic body, so that the followability corresponding to a slight inclination of the wafer holding plate is improved. In addition to this, the wafer holding plate can be held uniformly and stably over the entire circumference, and the polishing accuracy can be improved.
【００１１】また、皮膜状の前記下側の弾性吊持部材と
前記上側の弾性吊持部材が、皮膜の面が基本的に水平面
と平行になるように張設されていることで、研磨中に最
も負荷される水平方向と平行な力を効率よく好適に受け
ることができる。このため、追従性を維持しつつ安定的
にウェーハ保持盤を保持でき、研磨精度を向上させるこ
とができる。The lower elastic suspension member and the upper elastic suspension member in the form of a film are stretched so that the surface of the film is basically parallel to the horizontal plane, so that the polishing can be performed during polishing. Can be efficiently and suitably subjected to a force parallel to the horizontal direction, which is most loaded on the vehicle. For this reason, it is possible to stably hold the wafer holding plate while maintaining the followability, and it is possible to improve the polishing accuracy.
【００１２】[0012]
【発明の実施の形態】以下、本発明にかかるウェーハの
研磨装置の好適な実施の形態について、添付図面に基づ
いて詳細に説明する。図１は、本発明に係るウェーハの
研磨装置の一実施例について要部である保持部を説明す
る断面図である。また、図２は図１の実施例の駆動機構
等を説明する側面図である。なお、図３に示した従来技
術の構成と同一の構成については、同一の符号を付して
説明を省略する。本実施例は、シリコンウェーハ（以
下、単に「ウェーハ」という）の被研磨面を研磨するウ
ェーハの研磨装置であって、ウェーハを保持する保持部
１０と、その保持部１０に保持されたウェーハ１２の被
研磨面１２ａを研磨する研磨面５２が形成された定盤５
０とを備え、保持部１０と定盤５０とを相対的に運動さ
せてウェーハ１２の被研磨面１２ａを研磨するものであ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a wafer polishing apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view for explaining a holding part which is a main part of an embodiment of a wafer polishing apparatus according to the present invention. FIG. 2 is a side view illustrating the driving mechanism and the like of the embodiment of FIG. Note that the same components as those of the related art shown in FIG. 3 are denoted by the same reference numerals and description thereof is omitted. The present embodiment is a wafer polishing apparatus for polishing a surface to be polished of a silicon wafer (hereinafter, simply referred to as “wafer”), comprising a holding unit 10 for holding a wafer, and a wafer 12 held by the holding unit 10. Surface plate 5 on which polishing surface 52 for polishing surface 12a to be polished is formed.
0, and the holder 10 and the platen 50 are relatively moved to polish the surface 12a to be polished of the wafer 12.
【００１３】そして、本実施例の保持部１０は、次の構
成を具備する。２０はヘッド部材であり、凹部２１が定
盤の研磨面５２に向かって開かれて設けられている。こ
のヘッド部材２０は、保持部１０において、ワークであ
るウェーハ１２を保持する部分の基部を構成する。２２
はウェーハ保持盤であり、ヘッド部材２０の凹部２１内
に配され、ウェーハ１２が保持される保持面２２ａを有
する。すなわち、このウェーハ保持盤２２は、下面にウ
ェーハ１２を保持するための保持面２２ａを備え、ヘッ
ド部材２０の外周部２０ａの内側に、その外周部２０ａ
に囲まれるように配されている。また、保持面２２ａ
が、外周部２０ａの下面より下方に出るように位置され
る。The holding section 10 of the present embodiment has the following configuration. Reference numeral 20 denotes a head member, and the recess 21 is provided so as to open toward the polishing surface 52 of the surface plate. The head member 20 forms a base of a portion of the holding unit 10 for holding the wafer 12 as a work. 22
Is a wafer holding board, which is disposed in the recess 21 of the head member 20 and has a holding surface 22a on which the wafer 12 is held. That is, the wafer holding plate 22 has a holding surface 22a for holding the wafer 12 on the lower surface, and the outer peripheral portion 20a is provided inside the outer peripheral portion 20a of the head member 20.
It is arranged to be surrounded by. Also, the holding surface 22a
Is located below the lower surface of the outer peripheral portion 20a.
【００１４】本実施例では、図３の従来技術と同様に、
ウェーハ１２を、吸着によってウェーハ保持盤２２の保
持面２２ａに保持させる方式がとられている。すなわ
ち、ウェーハ保持盤２２の保持面２２ａは、減圧吸着に
よってウェーハ１２を吸着する吸着面に形成され、真空
装置（減圧手段６７）によってウェーハ１２を吸着す
る。なお、本発明にかかるウェーハ１２の保持方式は、
これに限定されないことは勿論であり、ウェーハ保持盤
２２の保持面２２ａが、例えば、水を介してウェーハ１
２を貼着する貼着面に形成されていてもよい。この場合
は、保持面２２ａには、通常、バッキング材が貼着され
る。そのバッキング材は、吸着性に富む表面を有し、ウ
ェーハ１２を水等の液体の表面張力及びその粘性によっ
て確実に貼着できる機能（水貼り機能）を備える。In this embodiment, as in the prior art shown in FIG.
A method of holding the wafer 12 on the holding surface 22a of the wafer holding board 22 by suction is adopted. That is, the holding surface 22a of the wafer holding board 22 is formed on a suction surface for sucking the wafer 12 by the suction under reduced pressure, and sucks the wafer 12 by the vacuum device (decompression means 67). The holding method of the wafer 12 according to the present invention is as follows.
It is needless to say that the present invention is not limited to this.
2 may be formed on the sticking surface to stick. In this case, a backing material is usually attached to the holding surface 22a. The backing material has a surface having a high adsorptivity, and has a function (water application function) of securely attaching the wafer 12 by the surface tension and the viscosity of a liquid such as water.
【００１５】また、水貼り機能を備える保持面２２ａの
場合、ウェーハ１２の横滑りを防止するため、ウェーハ
１２を囲うリング帯状のいわゆるテンプレートが、保持
面２２ａに装着される。このテンプレートは、一般的
に、その内径がウェーハ１２の外径に比べて１ｍｍ以下
程度（例えば、０．３ｍｍ）大きく設定されている。な
お、本実施例にかかるウェーハ１２の直径は、例えば、
約３００ｍｍのものを想定することができる。このよう
にテンプレートの内径と、その内径に嵌まり合うウェー
ハ１２の外径との寸法差が、ウェーハ１２の大きさに比
べて極めて小さい。また、テンプレートの厚さは、ウェ
ーハ１２よりも薄く設定される。Further, in the case of the holding surface 22a having a water sticking function, a ring-shaped so-called template surrounding the wafer 12 is mounted on the holding surface 22a in order to prevent the wafer 12 from skidding. Generally, the inner diameter of this template is set to be about 1 mm or less (for example, 0.3 mm) larger than the outer diameter of the wafer 12. The diameter of the wafer 12 according to the present embodiment is, for example,
A length of about 300 mm can be envisaged. As described above, the dimensional difference between the inner diameter of the template and the outer diameter of the wafer 12 fitted to the inner diameter is extremely smaller than the size of the wafer 12. Further, the thickness of the template is set to be smaller than that of the wafer 12.
【００１６】２４は下側の弾性吊持部材であり、ヘッド
部材２０とウェーハ保持盤２２との間に両者に固定され
て配されると共に保持面２２ａに近い下側に配され、ウ
ェーハ保持盤２２を、ヘッド部材２０に対して上下方向
等へ移動することを許容して吊持している。この下側の
弾性吊持部材２４は、従来の技術の欄で説明した板状の
弾性部材６６(図３参照)と同等に設けられている。ま
た、本実施例の下側の弾性吊持部材２４は、皮膜状の弾
性体によって設けられており、皮膜の面が基本的に水平
面と平行になるように張設されている。Numeral 24 denotes a lower elastic suspension member, which is fixed between the head member 20 and the wafer holding plate 22 and disposed below the head member 20 and the wafer holding plate 22a. 22 is suspended with respect to the head member 20 while allowing the head member 22 to move in a vertical direction or the like. The lower elastic suspension member 24 is provided similarly to the plate-like elastic member 66 (see FIG. 3) described in the section of the related art. Further, the lower elastic suspension member 24 of the present embodiment is provided by a film-like elastic body, and is stretched so that the surface of the film is basically parallel to the horizontal plane.
【００１７】また、本実施例の下側の弾性吊持部材２４
は、別言すれば、板状或いはシート状に形成された弾性
（柔軟性）に富む弾性材によって形成されているとも表
現できる。そして、さらに詳細には、例えば、硬質のゴ
ム板材（本実施例では布入りニトリルゴム）によってド
ーナツ状に形成されている。また、この下側の弾性吊持
部材２４は、本実施例では、下側の弾性吊持部材の外周
部２４ｂがヘッド部材２０側周壁部である外周部２０ａ
の下側に固定され、下側の弾性吊持部材の内周部２４ａ
がウェーハ保持盤２２の外縁部２２ｂの下部に固定され
ている。さらに詳細には、下側の弾性吊持部材の外周部
２４ｂは、ヘッド部材２０の外周部２０ａを構成する上
下の部材によって挟まれ、ボルト（図示せず）に締め付
けられて固定されている。また、下側の弾性吊持部材の
内周部２４ａは、ウェーハ保持盤２２と下側の押え部材
２３ａとに挟まれ、ボルト（図示せず）によって締め付
けられて固定されている。これにより、下側の弾性吊持
部材２４は、ウェーハ保持盤２２をヘッド部材２０に対
して上下方向等（水平方向等も含む）へ移動することを
許容して吊持している。Further, the lower elastic suspension member 24 of this embodiment is provided.
In other words, it can be expressed that it is formed of an elastic material having a high elasticity (flexibility) formed in a plate shape or a sheet shape. More specifically, for example, it is formed in a donut shape by a hard rubber plate material (a nitrile rubber with cloth in this embodiment). In this embodiment, the lower elastic suspension member 24 has an outer peripheral portion 20a in which the outer peripheral portion 24b of the lower elastic suspension member is the head member 20 side peripheral wall portion.
Is fixed to the lower side, and the inner peripheral portion 24a of the lower elastic suspension member
Are fixed to the lower portion of the outer edge portion 22b of the wafer holding board 22. More specifically, the outer peripheral portion 24b of the lower elastic suspension member is sandwiched between upper and lower members constituting the outer peripheral portion 20a of the head member 20, and is fixed by being bolted (not shown). The inner peripheral portion 24a of the lower elastic suspension member is sandwiched between the wafer holding plate 22 and the lower pressing member 23a, and is fixed by being bolted (not shown). As a result, the lower elastic suspension member 24 suspends the wafer holding plate 22 while allowing the wafer holding plate 22 to move in the vertical direction or the like (including the horizontal direction) with respect to the head member 20.
【００１８】２６は上側の弾性吊持部材であり、ヘッド
部材２０とウェーハ保持盤２２との間に両者に固定され
て配されると共に下側の弾性吊持部材２４よりも所定の
間隔をおいて上側に配されている。この上側の弾性吊持
部材２６によれば、ウェーハ保持盤２２を、ヘッド部材
２０に対して上下方向等へ移動することを許容して吊持
している。また、本実施例の上側の弾性吊持部材２６
は、下側の弾性吊持部材２４と同様、皮膜状の弾性体に
よって設けられており、皮膜の面が基本的に水平面と平
行になるように張設されている。Reference numeral 26 denotes an upper elastic suspension member, which is fixed between the head member 20 and the wafer holding plate 22 and disposed at a predetermined distance from the lower elastic suspension member 24. And is arranged on the upper side. According to the upper elastic suspension member 26, the wafer holding plate 22 is suspended while being allowed to move in the vertical direction or the like with respect to the head member 20. Further, the upper elastic suspension member 26 of the present embodiment
Is provided by a film-like elastic body similarly to the lower elastic suspension member 24, and is stretched so that the surface of the film is basically parallel to the horizontal plane.
【００１９】また、本実施例の上側の弾性吊持部材２６
は、下側の弾性吊持部材２４と同様、板状或いはシート
状に形成された柔軟性に富む弾性材によって形成されて
いるとも表現できる。そして、さらに詳細には、例え
ば、硬質のゴム板材（本実施例では布入りニトリルゴ
ム）によってドーナツ状に形成されている。また、この
上側の弾性吊持部材２６は、本実施例では、上側の弾性
吊持部材の外周部２６ｂがヘッド部材２０側周壁部であ
る外周部２０ａの上側に固定され、上側の弾性吊持部材
の内周部２６ａがウェーハ保持盤２２の外縁部２２ｂの
上部に固定されている。さらに詳細には、上側の弾性吊
持部材の外周部２６ｂは、ヘッド部材２０の外周部２０
ａを構成する上下の部材によって挟まれ、ボルト（図示
せず）に締め付けられて固定されている。また、下側の
弾性吊持部材の内周部２６ａは、ウェーハ保持盤２２と
上側の押え部材２３ｂとに挟まれ、ボルト（図示せず）
によって締め付けられて固定されている。これにより、
上側の弾性吊持部材２６も、ウェーハ保持盤２２をヘッ
ド部材２０に対して上下方向等（水平方向等も含む）へ
移動することを許容して吊持している。Further, the upper elastic suspension member 26 of the present embodiment
Can be expressed as a plate-like or sheet-like elastic material having high flexibility, similar to the lower elastic suspension member 24. More specifically, for example, it is formed in a donut shape by a hard rubber plate material (a nitrile rubber with cloth in this embodiment). In this embodiment, the upper elastic suspension member 26 has an outer peripheral portion 26b of the upper elastic suspension member fixed to an upper side of an outer peripheral portion 20a which is a peripheral wall portion on the head member 20 side. An inner peripheral portion 26a of the member is fixed above the outer edge 22b of the wafer holding plate 22. More specifically, the outer peripheral portion 26b of the upper elastic suspension member is connected to the outer peripheral portion 20 of the head member 20.
It is sandwiched between upper and lower members constituting a and is fastened and fixed to a bolt (not shown). Also, the inner peripheral portion 26a of the lower elastic suspension member is sandwiched between the wafer holding plate 22 and the upper pressing member 23b, and bolts (not shown) are provided.
It is fastened and fixed by. This allows
The upper elastic suspension member 26 also suspends the wafer holding plate 22 while allowing the wafer holding plate 22 to move in the vertical direction or the like (including the horizontal direction) with respect to the head member 20.
【００２０】以上の構成によれば、ウェーハ保持盤２２
を、下側の弾性吊持部材２４と上側の弾性吊持部材２６
という２層の皮膜を介し、ヘッド部材２０で保持してい
ることになり、別言すれば２点支持になる。このため、
ウェーハ保持盤２２がバランスよく安定的に保持され
る。すなわち、２点支持になるため、ウェーハ保持盤２
２が振れることを、好適に防止できる。そして、その安
定的な保持によって、ウェーハ１２（被研磨面１２ａ）
が定盤の研磨面５２にバランスよく安定的に押し当てら
れ、被研磨面１２ａの研磨を高精度に行うことができ
る。また、下側の弾性吊持部材２４と上側の弾性吊持部
材２６は、皮膜状で、弾性に富むものであるため、ウェ
ーハ保持盤２２を介してウェーハ１２を定盤の研磨面５
２に押圧する際に、微妙な傾き変動に対して好適に追従
することができ、ウェーハの研磨精度を向上させること
ができる。また、従来技術のような摩擦作用によってウ
ェーハ保持盤２２の振れを防止するものとは異なり、各
弾性吊持部材２４、２６の両方が弾性を利用して不安定
な負荷を吸収するもので、この点からも、追従性が向上
し、ウェーハの研磨精度を向上させることができる。According to the above configuration, the wafer holding plate 22
To the lower elastic suspension member 24 and the upper elastic suspension member 26
That is, it is held by the head member 20 through the two-layered film, that is, it is supported at two points. For this reason,
The wafer holding board 22 is stably held in a well-balanced manner. That is, the wafer holding plate 2 is supported at two points.
2 can be suitably prevented from swinging. Then, by the stable holding, the wafer 12 (the polished surface 12a)
Is stably pressed against the polished surface 52 of the surface plate in a well-balanced manner, and the polished surface 12a can be polished with high accuracy. Further, the lower elastic suspension member 24 and the upper elastic suspension member 26 are in the form of a film and have high elasticity.
When pressing in the direction 2, it is possible to appropriately follow a slight change in inclination, and it is possible to improve the polishing accuracy of the wafer. Also, unlike the conventional technique in which the wafer holding plate 22 is prevented from oscillating by a frictional action, each of the elastic suspension members 24 and 26 absorbs an unstable load by utilizing elasticity. Also from this point, the followability is improved, and the polishing accuracy of the wafer can be improved.
【００２１】また、下側の弾性吊持部材２４と上側の弾
性吊持部材２６は、均一な厚さでドーナツ状に形成され
ているため、全周で加重を均等に分散でき、ウェーハ保
持盤２２をその全周について均一に安定的に保持するこ
とができる。このことも、研磨精度を向上させる基本的
な要素になっている。また、本実施例では、皮膜状の下
側の弾性吊持部材２４と上側の弾性吊持部材２６が、皮
膜の面が基本的に水平面と平行になるように張設されて
いる。これにより、下側の弾性吊持部材２４と上側の弾
性吊持部材２６によって、研磨中に最も負荷される水平
方向と平行な力を効率よく好適に受けることができる。
これにより、横揺れを好適に防止できる。このため、追
従性を維持しつつ安定的にウェーハ保持盤を保持でき、
研磨精度を向上させることができる。Further, since the lower elastic suspension member 24 and the upper elastic suspension member 26 are formed in a donut shape with a uniform thickness, the load can be evenly distributed over the entire circumference, and the wafer holding plate can be formed. 22 can be held uniformly and stably over the entire circumference. This is also a basic element for improving the polishing accuracy. In the present embodiment, the lower elastic suspension member 24 and the upper elastic suspension member 26 in the form of a film are stretched so that the surface of the film is basically parallel to the horizontal plane. This allows the lower elastic suspension member 24 and the upper elastic suspension member 26 to efficiently and suitably receive the most parallel load in the horizontal direction during polishing.
Thereby, the roll can be suitably prevented. For this reason, it is possible to stably hold the wafer holding plate while maintaining the following ability,
Polishing accuracy can be improved.
【００２２】２８はウェーハ加圧用圧力室であり、下側
の弾性吊持部材２４と上側の弾性吊持部材２６の少なく
とも一方によって、ヘッド部材２０の内部がウェーハ保
持盤２２と共に画され、シールされて形成されている。
このウェーハ加圧用圧力室２８内へは、所定の圧力流体
である例えば圧縮空気が加圧手段３０によって供給され
る。このように加圧手段３０によってウェーハ加圧用圧
力室２８を加圧することで、ウェーハ保持盤２２を介し
てウェーハ１２（被研磨面１２ａ）を定盤の研磨面５２
に均一に押圧でき、ウェーハ１２の被研磨面１２ａを好
適に研磨できる。なお、加圧手段３０には、ウェーハ加
圧用圧力室２８へ供給される圧縮空気の圧力を調整する
圧力調整装置（図示せず）が備えられている。また、加
圧手段３０としては、空気圧の場合、具体的にはコンプ
レッサである。Reference numeral 28 denotes a pressure chamber for pressurizing the wafer. The interior of the head member 20 is defined and sealed with the wafer holding plate 22 by at least one of the lower elastic suspension member 24 and the upper elastic suspension member 26. It is formed.
A predetermined pressure fluid, for example, compressed air, for example, is supplied into the wafer pressurizing pressure chamber 28 by the pressurizing means 30. By pressing the pressure chamber 28 for wafer pressing by the pressing means 30 in this manner, the wafer 12 (the surface 12a to be polished) is polished through the wafer holding plate 22 to the polishing surface 52 of the surface plate.
, And the polished surface 12a of the wafer 12 can be suitably polished. The pressurizing means 30 is provided with a pressure adjusting device (not shown) for adjusting the pressure of the compressed air supplied to the wafer pressurizing pressure chamber 28. In the case of air pressure, the compressor 30 is specifically a compressor.
【００２３】本実施例のウェーハ加圧用圧力室２８は、
ウェーハ保持盤２２の上面とによって、ヘッド部材２０
の内部が画成されると共にシールされることで設けられ
ている。また、圧力流体は、加圧手段３０から連通路２
９を介してウェーハ加圧用圧力室２８に導入される。な
お、本発明のウェーハ加圧用圧力室２８の形態、或いは
圧力流体を導入する手段(経路)は、本実施例に限定され
るものではない。例えば、ウェーハ加圧用圧力室２８
を、ウェーハ保持盤２２の上面と下側の弾性吊持部材２
４とによって、ヘッド部材２０の内部を画成すると共に
シールすることで設けてもよい。また、下側の弾性吊持
部材２４と上側の弾性吊持部材２６との両方によって、
ウェーハ加圧用圧力室２８をシールするようにしてもよ
い。The wafer pressurizing pressure chamber 28 of this embodiment is
By the upper surface of the wafer holding plate 22, the head member 20
Is defined and sealed. The pressurized fluid is supplied from the pressurizing means 30 to the communication passage 2.
9 is introduced into the wafer pressurizing pressure chamber 28. The form of the wafer pressurizing chamber 28 or the means (path) for introducing a pressure fluid according to the present invention is not limited to the present embodiment. For example, the wafer pressurizing pressure chamber 28
The upper and lower elastic suspension members 2 of the wafer holding plate 22.
4 may be provided by defining and sealing the inside of the head member 20. In addition, both the lower elastic suspension member 24 and the upper elastic suspension member 26
The wafer pressure chamber 28 may be sealed.
【００２４】また、下側の弾性吊持部材２４と上側の弾
性吊持部材２６との両方でシールをした場合で、下側の
弾性吊持部材２４の上面、上側の弾性吊持部材２６の下
面、ウェーハ保持盤２２の外周側面、及びヘッド部材２
０の内周側面によって囲まれた周状圧力室３１に、圧力
流体を導入する経路（連通路）を別に設けるようにして
もよい。この周状圧力室３１に高圧の圧力流体を供給し
た場合は、ウェーハ保持盤２２の横揺れを好適に防止で
きる。すなわち、周状圧力室３１が、ウェーハ保持盤２
２の動きを、全周について均一な圧力で緩衝する緩衝手
段として作用し、ウェーハ保持盤２２をより安定的に保
持することができる。また、ウェーハ加圧用圧力室２８
と周状圧力室３１の２つの圧力系にかかる圧力を適宜調
整することで、ウェーハ１２の研磨面５２への押圧力を
研磨条件に応じて適宜調整し、研磨精度を向上させるこ
とも可能である。In the case where both the lower elastic suspension member 24 and the upper elastic suspension member 26 are sealed, the upper surface of the lower elastic suspension member 24 and the upper elastic suspension member 26 are sealed. Lower surface, outer peripheral side surface of wafer holding plate 22, and head member 2
A path (communication path) for introducing a pressure fluid may be separately provided in the peripheral pressure chamber 31 surrounded by the inner peripheral side surface of the zero. When a high-pressure fluid is supplied to the peripheral pressure chamber 31, the horizontal swing of the wafer holding plate 22 can be suitably prevented. That is, the circumferential pressure chamber 31 is
2 acts as a buffering means for buffering the movement at a uniform pressure over the entire circumference, so that the wafer holding plate 22 can be held more stably. Further, the wafer pressurizing pressure chamber 28
By appropriately adjusting the pressure applied to the two pressure systems of the peripheral pressure chamber 31 and the peripheral pressure chamber 31, it is also possible to appropriately adjust the pressing force on the polishing surface 52 of the wafer 12 according to the polishing conditions, thereby improving the polishing accuracy. is there.
【００２５】弾性吊持部材を２層（２段）に設けた場合
（弾性吊持部材２４、２６）について説明したが、さら
に加えて、弾性吊持部材の層を重ねた状態（３層以上の
複数層）にしても、複雑な形態になるが、同等或いはさ
らに安定的な効果を得ることが可能である。なお、この
場合において、各弾性吊持部材の気密(シール)や、形成
される圧力室の形態は、研磨加工の仕様に合わせて適宜
選択的に設定すればよい。また、本実施例では、両方の
弾性吊持部材２４、２６が皮膜状に設けられた場合を説
明したが、これに限定されるものではない。すなわち、
２層の弾性吊持部材２４、２６うち、一方の弾性吊持部
材はシール性を備えてウェーハ加圧用圧力室２８を設け
る関係上、皮膜状に形成されるとしても、他方の弾性吊
持部材は吊持して保持する機能のみを利用する場合は皮
膜状に形成されることを要しない。例えば、放射線状に
配された複数の紐状の弾性部材を用いることも可能であ
る。The case where the elastic suspending members are provided in two layers (two stages) (elastic suspending members 24 and 26) has been described. In addition, the state in which the layers of the elastic suspending members are stacked (three or more layers) ), It is possible to obtain an equivalent or more stable effect, though the configuration is complicated. In this case, the airtightness (sealing) of each elastic suspension member and the form of the pressure chamber to be formed may be appropriately selected appropriately in accordance with the specifications of the polishing process. Further, in the present embodiment, the case where both the elastic suspension members 24 and 26 are provided in the form of a film has been described, but the present invention is not limited to this. That is,
One of the two elastic suspension members 24 and 26 has a sealing property and is provided with the pressure chamber 28 for pressurizing the wafer. Does not need to be formed into a film when only the function of suspending and holding is used. For example, a plurality of string-like elastic members arranged in a radial pattern can be used.
【００２６】次に上記の保持部１０が設けられるウェー
ハの研磨装置の基本的な構成について、図２に基づいて
説明する。ウェーハの研磨装置の基本的な構成を列挙す
れば、研磨面５２が形成された定盤５０、ウェーハ表面
１２ａを研磨面５２に当接させるべく保持部１０と定盤
５０とを接離動させる接離動手段５４、ウェーハ１２
を、ウェーハ保持盤２２を介して押圧する押圧手段５６
（本実施例では前記加圧手段３０を含むエアバック機
構）、ウェーハ１２が研磨面５２に当接・押圧された状
態で保持部１０（ウェーハ１２）と定盤５０とを回転お
よび／または往復動（自転しない旋回運動のような動作
を含む）によって相対的に運動させる駆動手段５８ａ、
５８ｂ、スラリー等を含む液状の研磨剤の供給手段（図
示せず）等がある。Next, a basic configuration of a wafer polishing apparatus provided with the holding section 10 will be described with reference to FIG. To cite the basic configuration of the wafer polishing apparatus, the platen 50 on which the polishing surface 52 is formed and the holding unit 10 and the platen 50 are moved so that the wafer surface 12a is brought into contact with the polishing surface 52. Contacting / separating means 54, wafer 12
Pressing means 56 for pressing through the wafer holding plate 22
(In this embodiment, an airbag mechanism including the pressurizing unit 30), the holding unit 10 (wafer 12) and the platen 50 are rotated and / or reciprocated while the wafer 12 is in contact with and pressed against the polishing surface 52. Driving means 58a for relatively moving by movement (including an operation such as a turning movement that does not rotate),
58b, a means (not shown) for supplying a liquid abrasive containing a slurry or the like.
【００２７】次に本実施例のウェーハの研磨装置に関す
る動作について説明する。先ず、減圧手段３１によって
ウェーハ加圧用圧力室２８を減圧し、ウェーハ保持盤２
２を吸引させて上方へ移動させる。これにより、一方の
テーパ嵌合部３２（雌テーパ）に、他方のテーパ嵌合部
３４（雄テーパ）が嵌まった状態となり、そのテーパの
嵌め合い作用によって、ウェーハ保持盤２２が保持部１
０の所定位置に正確に位置決めされて保持される。すな
わち、ヘッド部材２０の軸心とウェーハ保持盤２２の軸
心に若干のずれがあっても、テーパの嵌め合いによって
矯正されて、ウェーハ保持盤２２の芯出しがされる。ま
た、一方のテーパ嵌合部３２に他方のテーパ嵌合部３４
が嵌まった状態になるため、ウェーハ保持盤２２が揺動
することを完全に止めることができる。従って、ウェー
ハ保持盤２２を保持部１０について高い位置決め精度で
好適に保持させることができる。Next, the operation of the wafer polishing apparatus according to the present embodiment will be described. First, the pressure chamber 28 for wafer pressurization is depressurized by the decompression means 31, and the wafer holding plate 2
2 is moved upward by suction. As a result, the one taper fitting portion 32 (female taper) is fitted to the other taper fitting portion 34 (male taper), and the wafer holding plate 22 is moved by the fitting action of the taper.
0 is accurately positioned and held at a predetermined position. That is, even if there is a slight deviation between the axis of the head member 20 and the axis of the wafer holding board 22, the wafer holding board 22 is centered after being corrected by the taper fitting. Further, one taper fitting portion 32 is connected to the other taper fitting portion 34.
Is fitted, so that the swinging of the wafer holding plate 22 can be completely stopped. Therefore, the wafer holding plate 22 can be suitably held with high positioning accuracy with respect to the holding unit 10.
【００２８】そして、その保持部１０を所定位置に位置
されたウェーハ１２上へ当接するまで移動して、そのウ
ェーハ１２を、真空吸着用の減圧手段６７で吸引するこ
とでウェーハ保持盤２２の保持面２２ａに吸着させる。
次に、保持部１０を移動して、ウェーハ１２を定盤５０
の研磨面５２上に位置させる。そして、ウェーハ加圧用
圧力室２８へ加圧手段３０によって所定圧力の流体を供
給することで、ウェーハ保持盤２２を研磨面５２側へ押
圧する。押圧前にウェーハ保持盤２２に保持されたウェ
ーハ１２が研磨面５２に対して若干傾いていたとして
も、流体圧の作用でウェーハ保持盤２２の全面を均等に
押圧できるため、ウェーハ表面１２ａを研磨面５２に好
適に追随させて均一に研磨できる。なお、圧力調整装置
によってウェーハ加圧用圧力室２８へ供給する流体の圧
力を調整することで、研磨条件を容易に変更できる。Then, the holding unit 10 is moved until it comes into contact with the wafer 12 positioned at a predetermined position, and the wafer 12 is sucked by the decompression means 67 for vacuum suction, thereby holding the wafer holding board 22. The surface 22a is adsorbed.
Next, the holding unit 10 is moved to place the wafer 12 on the platen 50.
Is positioned on the polishing surface 52. Then, the wafer holding plate 22 is pressed toward the polishing surface 52 by supplying a fluid of a predetermined pressure to the wafer pressurizing chamber 28 by the pressurizing means 30. Even if the wafer 12 held on the wafer holding plate 22 is slightly inclined with respect to the polishing surface 52 before pressing, the entire surface of the wafer holding plate 22 can be uniformly pressed by the action of the fluid pressure, so that the wafer surface 12a is polished. The polishing can be uniformly performed by suitably following the surface 52. The polishing conditions can be easily changed by adjusting the pressure of the fluid supplied to the wafer pressurizing pressure chamber 28 by the pressure adjusting device.
【００２９】以上の実施例では、ウェーハ保持盤２２の
保持面２２ａに、ウェーハ１２を吸着する場合、或いは
水を介して貼着する場合について説明したが、本発明は
これに限定されるものではなく、ウェーハ１２を、保持
面２２ａに接着によって確実に貼付するということも可
能である。また、以上に説明した実施例では、空気圧に
よってウェーハ保持盤２２を介してウェーハ１２を研磨
面５２に押圧（加圧）する場合を説明したが、他の流体
圧例えば水圧または油圧を利用することもできる。ま
た、以上に説明したウェーハの研磨装置によれば、シリ
コンウェーハの他にウェーハ状のワーク（例えばガラス
薄板材、水晶等の硬脆性薄板材の表面）も好適に研磨す
ることができる。以上、本発明の好適な実施例について
種々述べてきたが、本発明はこの実施例に限定されるも
のではなく、発明の精神を逸脱しない範囲内でさらに多
くの改変を施し得るのは勿論のことである。In the above embodiment, the case where the wafer 12 is attracted to the holding surface 22a of the wafer holding board 22 or the case where the wafer 12 is adhered via water has been described. However, the present invention is not limited to this. Instead, it is also possible to securely attach the wafer 12 to the holding surface 22a by bonding. Further, in the above-described embodiment, the case where the wafer 12 is pressed (pressed) on the polishing surface 52 via the wafer holding plate 22 by air pressure has been described, but other fluid pressure, for example, water pressure or hydraulic pressure may be used. Can also. Further, according to the wafer polishing apparatus described above, a wafer-like work (for example, a surface of a hard brittle thin plate material such as a glass thin plate material or quartz crystal) can be suitably polished in addition to a silicon wafer. As described above, various preferred embodiments of the present invention have been described. However, the present invention is not limited to these embodiments, and it goes without saying that many more modifications can be made without departing from the spirit of the invention. That is.
【００３０】[0030]
【発明の効果】本発明によれば、下側の弾性吊持部材と
上側の弾性吊持部材とによって、ウェーハ保持盤を２点
で支持することになる。このため、ウェーハ保持盤がバ
ランスよく安定的に保持され、その安定的な保持によっ
て、ウェーハ（被研磨面）が定盤の研磨面にバランスよ
く安定的に押し当てられる。また、下側の弾性吊持部材
と上側の弾性吊持部材は、弾性材で設けられているた
め、ウェーハ保持盤を介してウェーハ（被研磨面）を定
盤の研磨面に押圧する際に、微妙な傾き変動に対して好
適に追従することができる。従って、本発明によれば、
ウェーハの被研磨面を定盤の研磨面に均一に且つ安定的
に押し当てることができ、ウェーハの研磨精度を向上さ
せることができるという著効を奏する。According to the present invention, the wafer holding plate is supported at two points by the lower elastic suspension member and the upper elastic suspension member. Therefore, the wafer holding plate is stably held in a well-balanced manner, and the wafer (polished surface) is stably pressed against the polished surface of the platen in a well-balanced manner. In addition, since the lower elastic suspension member and the upper elastic suspension member are provided by elastic materials, when the wafer (polished surface) is pressed against the polishing surface of the surface plate via the wafer holding plate. Therefore, it is possible to favorably follow a subtle inclination change. Thus, according to the present invention,
The surface to be polished of the wafer can be uniformly and stably pressed against the surface to be polished of the surface plate, which brings about a remarkable effect that the polishing accuracy of the wafer can be improved.
【図１】本発明に係るウェーハの研磨装置の一実施例に
ついて要部である保持部を説明する断面図である。FIG. 1 is a cross-sectional view for explaining a holding portion, which is a main portion, of an embodiment of a wafer polishing apparatus according to the present invention.
【図２】図２は図１の実施例の駆動機構等を説明する側
面図である。FIG. 2 is a side view for explaining a driving mechanism and the like of the embodiment of FIG. 1;
【図３】従来の技術を示す断面図である。FIG. 3 is a cross-sectional view showing a conventional technique.
１０ 保持部 １２ ウェーハ １２ａ 被研磨面 ２０ ヘッド部材 ２１ 凹部 ２２ ウェーハ保持盤 ２２ａ 保持面 ２４ 下側の弾性吊持部材 ２６ 上側の弾性吊持部材 ２８ ウェーハ加圧用圧力室 ３０ 加圧手段 ５０ 定盤 ５１ 研磨布 ５２ 研磨面 DESCRIPTION OF SYMBOLS 10 Holding part 12 Wafer 12a Polished surface 20 Head member 21 Depression 22 Wafer holding board 22a Holding surface 24 Lower elastic suspension member 26 Upper elastic suspension member 28 Wafer pressure chamber 30 Pressure means 50 Surface plate 51 Polishing cloth 52 Polishing surface
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大西 進 長野県長野市松代町清野1650番地 不二越 機械工業株式会社内 (72)発明者 橋詰 健二 長野県長野市松代町清野1650番地 不二越 機械工業株式会社内 Ｆターム(参考） 3C058 AA07 AB04 BB04 BC02 CB01 DA17 ────────────────────────────────────────────────── ─── Continued on the front page (72) Susumu Onishi, 1650 Kiyono, Matsushiro-machi, Nagano City, Nagano Prefecture Inside Fujikoshi Machinery Co., Ltd. (72) Inventor Kenji Hashizume 1650, Kiyono, Matsushiro-machi, Nagano City, Nagano Prefecture F-term (for reference) 3C058 AA07 AB04 BB04 BC02 CB01 DA17
Claims (3)
に保持されたウェーハの被研磨面を研磨する研磨面が形
成された定盤とを備え、前記保持部と前記定盤とを相対
的に運動させてウェーハの被研磨面を研磨するウェーハ
の研磨装置において、 前記保持部が、 凹部が前記定盤の研磨面に向かって開かれて設けられた
ヘッド部材と、 該ヘッド部材の前記凹部内に配され、ウェーハが保持さ
れる保持面を有するウェーハ保持盤と、 前記ヘッド部材と前記ウェーハ保持盤との間に両者に固
定されて配されると共に前記保持面に近い下側に配さ
れ、前記ウェーハ保持盤を、ヘッド部材に対して上下方
向等へ移動することを許容して吊持する下側の弾性吊持
部材と、 前記ヘッド部材と前記ウェーハ保持盤との間に両者に固
定されると共に前記下側の弾性吊持部材よりも上側に配
され、前記ウェーハ保持盤を、ヘッド部材に対して上下
方向等へ移動することを許容して吊持する上側の弾性吊
持部材と、 前記下側の弾性吊持部材と前記上側の弾性吊持部材の少
なくとも一方によって、前記ヘッド部材の内部が前記ウ
ェーハ保持盤と共に画され、シールされて形成されるウ
ェーハ加圧用圧力室と、 前記ウェーハ加圧用圧力室へ圧力流体を供給し、前記ウ
ェーハ保持盤を介してウェーハを前記定盤の研磨面に押
圧するための加圧手段とを具備することを特徴とするウ
ェーハの研磨装置。1. A holding unit for holding a wafer, and a surface plate having a polished surface for polishing a surface to be polished of the wafer held by the holding unit, wherein the holding unit and the surface plate are relatively In a wafer polishing apparatus for polishing a surface to be polished of a wafer by moving the polishing member, the holding portion includes a head member provided with a concave portion opened toward the polishing surface of the platen; A wafer holding plate arranged in the recess and having a holding surface for holding a wafer; and a head holding member and the wafer holding plate fixedly disposed between the head member and the wafer holding plate and arranged on a lower side close to the holding surface. The lower elastic suspending member that suspends the wafer holding board by allowing it to move in a vertical direction or the like with respect to the head member, and between the head member and the wafer holding board. Fixed and said lower side An upper elastic suspending member which is arranged above the elastic suspending member, and which suspends the wafer holding plate by allowing the wafer holding plate to move in a vertical direction or the like with respect to a head member; and The inside of the head member is defined together with the wafer holding plate by at least one of a holding member and the upper elastic suspension member, and a pressure chamber for pressurizing the wafer formed by sealing is provided. And a pressurizing means for supplying a fluid and pressing the wafer against the polishing surface of the surface plate via the wafer holding plate.
性吊持部材が、皮膜状の弾性体によって設けられている
ことを特徴とする請求項１記載のウェーハの研磨装置。2. The wafer polishing apparatus according to claim 1, wherein the lower elastic suspension member and the upper elastic suspension member are provided by a film-like elastic body.
上側の弾性吊持部材が、皮膜の面が基本的に水平面と平
行になるように張設されていることを特徴とする請求項
２記載のウェーハの研磨装置。3. The film-shaped lower elastic suspension member and the upper elastic suspension member are stretched so that the surface of the film is basically parallel to a horizontal plane. The wafer polishing apparatus according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000017309A JP4307674B2 (en) | 2000-01-26 | 2000-01-26 | Wafer polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000017309A JP4307674B2 (en) | 2000-01-26 | 2000-01-26 | Wafer polishing equipment |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001205557A true JP2001205557A (en) | 2001-07-31 |
| JP2001205557A5 JP2001205557A5 (en) | 2007-03-15 |
| JP4307674B2 JP4307674B2 (en) | 2009-08-05 |
Family
ID=18544320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000017309A Expired - Fee Related JP4307674B2 (en) | 2000-01-26 | 2000-01-26 | Wafer polishing equipment |
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| Country | Link |
|---|---|
| JP (1) | JP4307674B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010046756A (en) * | 2008-08-21 | 2010-03-04 | Ebara Corp | Polishing method and its device |
| JP2011522416A (en) * | 2008-05-30 | 2011-07-28 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Semiconductor wafer polishing apparatus and polishing method |
| JP2013173226A (en) * | 2013-04-25 | 2013-09-05 | Nikon Corp | Polishing apparatus |
| CN114871932A (en) * | 2022-06-13 | 2022-08-09 | 江苏科沛达半导体科技有限公司 | Environment-friendly production equipment for semiconductor material and use method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110605629B (en) * | 2019-09-19 | 2022-11-18 | 西安奕斯伟材料科技有限公司 | Grinding device |
-
2000
- 2000-01-26 JP JP2000017309A patent/JP4307674B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011522416A (en) * | 2008-05-30 | 2011-07-28 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Semiconductor wafer polishing apparatus and polishing method |
| JP2010046756A (en) * | 2008-08-21 | 2010-03-04 | Ebara Corp | Polishing method and its device |
| JP2013173226A (en) * | 2013-04-25 | 2013-09-05 | Nikon Corp | Polishing apparatus |
| CN114871932A (en) * | 2022-06-13 | 2022-08-09 | 江苏科沛达半导体科技有限公司 | Environment-friendly production equipment for semiconductor material and use method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4307674B2 (en) | 2009-08-05 |
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