JP2001202826A - Transparent conductive film - Google Patents

Transparent conductive film

Info

Publication number
JP2001202826A
JP2001202826A JP2000013111A JP2000013111A JP2001202826A JP 2001202826 A JP2001202826 A JP 2001202826A JP 2000013111 A JP2000013111 A JP 2000013111A JP 2000013111 A JP2000013111 A JP 2000013111A JP 2001202826 A JP2001202826 A JP 2001202826A
Authority
JP
Japan
Prior art keywords
conductive film
transparent conductive
film
laser
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000013111A
Other languages
Japanese (ja)
Inventor
Susumu Hashimoto
進 橋本
Hirotoshi Satou
博十志 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gunze Ltd
Original Assignee
Gunze Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gunze Ltd filed Critical Gunze Ltd
Priority to JP2000013111A priority Critical patent/JP2001202826A/en
Publication of JP2001202826A publication Critical patent/JP2001202826A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a transparent conductive film which is patterned without generating property deterioration, contamination and scratch. SOLUTION: A transparent conductive film is patterned by laminating a conductive film as a thin wire less than 1 mm using optical processes such as laser, without shielding or isolating surface of the transparent conductive film using a masking material.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】透明タッチパネル、透明ヒー
ター、透明電磁波シールド材等に用いられるパターニン
グされた透明導電フィルムに関する。
The present invention relates to a patterned transparent conductive film used for a transparent touch panel, a transparent heater, a transparent electromagnetic wave shielding material and the like.

【0002】[0002]

【従来の技術】透明導電性フィルムをパターニングする
方法としては、主に、従来からフォトレジスト法やスク
リーン印刷法により、まず透明導電性フィルムの導電膜
面上に所望のパターン状マスクを形成し、しかる後に酸
液でエッチングし不必要な部分の導電膜のみを剥離し、
その後、アルカリ液等の剥離剤により該パターン状マス
クを溶解等により除去する方法が行なわれている。然し
ながら、特開平4−147526では「レジストの塗布
やその剥離で透明電極が劣化して耐湿熱性などの耐久性
が低下する」とあり、特開平4−284525では「エッ
チング後のアルカリ等による保護レジスト層の剥離過程
で透明導電層が劣化するためか、抵抗が増加して入力精
度、ないし検出位置の精度が低下する」とあるように、
製品に係わる耐久性や導電膜劣化等の問題点がある。ま
た酸を用いてエッチングする方法の場合、そのエッチン
グ液の管理や取り扱い、更には、エッチング廃液の処理
という基本的な作業上、環境上の問題がある。加えて、
酸化インジュウム錫膜等の透明導電性フィルムはスパッ
タ法により形成されることが多いが、スパッタの電源が
交流か直流かの違い、あるいはスパッタ電力やガス圧、
ガスの種類、フィルム温度、ターゲットの状態等によっ
て導電膜の性質が変わり易く、エッチング条件の設定が
難しい。また耐擦過傷性を向上させるために導電膜の結
晶性を上げたものは、エッチングが充分行なわれず、パ
ターン不良が発生すると言う問題もある。
2. Description of the Related Art As a method of patterning a transparent conductive film, a desired pattern mask is first formed on a conductive film surface of the transparent conductive film by a photoresist method or a screen printing method. After that, it is etched with an acid solution to remove only unnecessary portions of the conductive film,
Thereafter, a method of removing the pattern mask by dissolving or the like with a stripping agent such as an alkaline solution is performed. However, Japanese Patent Application Laid-Open No. 4-147526 states that "the transparent electrode is degraded due to the application and peeling of the resist, and the durability such as wet heat resistance is reduced." Perhaps because the transparent conductive layer deteriorates in the layer peeling process, the resistance increases and the input accuracy, or the accuracy of the detection position decreases, ''
There are problems such as durability and deterioration of the conductive film related to the product. Further, in the case of the method of etching using an acid, there are problems in terms of basic operations such as management and handling of the etching solution and treatment of the etching waste solution, and environmental problems. in addition,
Transparent conductive films such as indium tin oxide film are often formed by a sputtering method.
The properties of the conductive film tend to change depending on the type of gas, film temperature, target state, and the like, and it is difficult to set etching conditions. Further, in the case where the crystallinity of the conductive film is increased in order to improve the scratch resistance, there is also a problem that the etching is not sufficiently performed and a pattern defect occurs.

【0003】[0003]

【発明が解決しようとする課題】従来のパターニング方
法は、透明導電性フィルムの導電膜面上に所望のパター
ン状マスクを形成し、しかる後に酸液でエッチングし不
必要な部分の導電膜のみを剥離し、その後、アルカリ液
等の剥離剤により該パターン状マスクを溶解等により除
去する方法が行なわれている。このためパターニングさ
れた導電膜は、機能劣化や汚れ、傷が発生し易いと言う
問題がある。本発明が解決しようとする課題は、透明導
電膜の機能劣化や汚れ、傷を発生させることなくパター
ニングした透明導電性フィルムを提供することである。
According to the conventional patterning method, a desired pattern mask is formed on the conductive film surface of the transparent conductive film, and thereafter, etching is performed with an acid solution to remove only unnecessary portions of the conductive film. A method is used in which the pattern mask is peeled off and then the pattern mask is removed by dissolving or the like with a peeling agent such as an alkaline solution. Therefore, there is a problem that the patterned conductive film is liable to cause functional deterioration, dirt, and scratches. The problem to be solved by the present invention is to provide a transparent conductive film patterned without causing functional deterioration, dirt, and scratches of the transparent conductive film.

【0004】[0004]

【課題を解決するための手段】前記の課題を解決する手
段として、透明導電膜面をマスキング材で遮蔽隔離させ
ることなく、1mm幅以下の細線状に導電膜を剥離する
ことにより、通電部及び通電のためのリード部をパター
ニングした透明導電性フィルムを提供する。透明導電膜
面側には、ニュートンリング等の光学的対策として、微
細な凹凸を有するパターニングした透明導電性フィルム
を提供する。また同じく透明導電膜面側には、熱による
基板フィルムからのオリゴマ発生防止対策として、導電
膜の下には、アクリル系樹脂コーティング層を有するパ
ターニングした透明導電性フィルムを提供する。一方透
明導電膜を有しない面には、反射防止等の光学的対策、
防汚や強度等の表面性対策として、各種コーティング層
を有するパターニングした透明導電性フィルムを提供す
る。また、ペンや指で入力されるアナログやマトリクス
のタッチパネルに用いられ、加工手段にはレーザー等の
光加工を用いた、パターニングした透明導電性フィルム
を提供する。
Means for Solving the Problems As means for solving the above-mentioned problems, a transparent conductive film is separated into a thin line having a width of 1 mm or less without shielding and isolating the surface of the transparent conductive film with a masking material. Provided is a transparent conductive film in which a lead portion for conducting electricity is patterned. On the transparent conductive film surface side, a patterned transparent conductive film having fine irregularities is provided as an optical measure such as Newton's ring. Similarly, on the transparent conductive film surface side, a patterned transparent conductive film having an acrylic resin coating layer is provided below the conductive film as a measure to prevent the generation of oligomers from the substrate film due to heat. On the other hand, optical measures such as anti-reflection,
As a measure against surface properties such as antifouling and strength, a patterned transparent conductive film having various coating layers is provided. Further, the present invention provides a patterned transparent conductive film that is used for an analog or matrix touch panel input by a pen or a finger and that uses optical processing such as laser as a processing means.

【0005】[0005]

【発明の実施の形態】本発明の実施の形態を以下に述べ
る。まず、この発明において使用するフィルム基材とし
ては、透明性を有する各種のプラスチックフィルムを使
用出来、具体的にはポリエチレンテレフタレート(PE
T)、ポリイミド(PI)、ポリエーテルサルフォン
(PES)、ポリエーテルエーテルケトン(PEE
K)、ポリカーボネイト(PC)、ポリプロピレン(P
P)、ポリアミド(PA)、ポリアクリル(PAC)、
ノルボルネン系の熱可塑性透明樹脂など、またはそれら
の積層体などが挙げられる。導電膜を設ける面には、ニ
ュートンリング対策として、平均粗さ最大2μmの凹凸
加工を設ける場合がある。また同じく導電膜を設ける面
には、熱による基板フィルムからのオリゴマ発生防止対
策として、導電膜の下には、アクリル系樹脂コート層を
設ける場合がある。タッチパネル用としては、フィルム
基材のペンや指が接触する面には、透明性、耐擦傷性、
耐摩耗性、ノングレア性等向上のため、ハードコート被
膜等を設ける場合がある。フィルム基材の厚みとして
は、通例20〜500μmのものが用いられる。
Embodiments of the present invention will be described below. First, various plastic films having transparency can be used as the film substrate used in the present invention. Specifically, polyethylene terephthalate (PE)
T), polyimide (PI), polyethersulfone (PES), polyetheretherketone (PEE)
K), polycarbonate (PC), polypropylene (P
P), polyamide (PA), polyacryl (PAC),
Examples include a norbornene-based thermoplastic transparent resin and the like, or a laminate thereof. On the surface on which the conductive film is provided, there may be a case where unevenness processing with an average roughness of 2 μm at the maximum is provided as a measure against Newton's ring. Similarly, an acrylic resin coating layer may be provided below the conductive film on the surface on which the conductive film is provided, as a measure to prevent the generation of oligomers from the substrate film due to heat. For touch panels, the surface of the film substrate that comes in contact with the pen or finger has transparency, scratch resistance,
In order to improve abrasion resistance, non-glare property, etc., a hard coat film or the like may be provided. The thickness of the film substrate is usually 20 to 500 μm.

【0006】次に透明導電膜の形成方法であるが、フィ
ルム基材上に透明導電膜を形成する一般的な方式として
はスパッタ法、真空蒸着法、イオンプレーティング法等
のPVD法、あるいはCVD法、塗工法、印刷法等があ
る。なお透明導電膜の形成材としては特に制限されるも
のではなく、例えば、インジュウム・スズ複合酸化物
(ITO)、スズ酸化物、銅、アルミニウム、ニッケル、
クロムなどがあげられ、異なる形成材が重ねて形成され
てもよい。また透明導電膜を形成する前に、透明性や密
着性等を向上させるためのアンダーコート層を設けても
よい。
[0006] Next, a method for forming a transparent conductive film is a general method for forming a transparent conductive film on a film substrate, such as a PVD method such as a sputtering method, a vacuum deposition method, an ion plating method, or a CVD method. Method, coating method, printing method and the like. The material for forming the transparent conductive film is not particularly limited. For example, indium-tin composite oxide (ITO), tin oxide, copper, aluminum, nickel,
Chromium and the like may be used, and different forming materials may be formed by being stacked. Before forming the transparent conductive film, an undercoat layer for improving transparency, adhesion, and the like may be provided.

【0007】次にパターニングであるが、パターニング
は従来、図3の如く面状に透明導電膜を剥離していた。
図3の11a、11b、11cが剥離されない部分で1
2が剥離された部分である。しかし電気の流れを考えれ
ば面状に剥離する必要はない。つまり電気が設計通り流
れるよう、図1(a)、(b)の例の如く透明導電性フィ
ルム表層の導電膜面のみを罫書くように、細線状にカッ
トすればよい。図1(a)は外形カットで、剥離長さは最
短になる。図1(b)は、比較的小型の同形パターンが連
続で配置される場合の連続カットの例である。よって工
程は、透明導電フィルムを固持し、レーザー光を照射
し、透明導電性フィルムまたはレーザー光を移動すれ
ば、細線状に導電膜を剥離することが出来る。条件が定
まれば極めて簡素化された工程である。
Next, regarding the patterning, conventionally, the transparent conductive film is peeled off in a plane as shown in FIG.
In the portion where 11a, 11b and 11c in FIG.
2 is a peeled portion. However, in view of the flow of electricity, it is not necessary to peel off the sheet. That is, it is only necessary to cut into thin lines so that only the conductive film surface of the transparent conductive film surface is scribed as shown in the examples of FIGS. 1A and 1B so that electricity flows as designed. FIG. 1 (a) shows the outer shape cut, and the peel length is the shortest. FIG. 1 (b) shows an example of continuous cutting when relatively small identical patterns are continuously arranged. Therefore, in the process, if the transparent conductive film is fixed, irradiated with laser light, and the transparent conductive film or the laser light is moved, the conductive film can be peeled in a thin line shape. Once the conditions are determined, it is a very simplified process.

【0008】従来の、透明導電性フィルムの導電膜面を
所望のパターン状マスクを形成し、しかる後に酸液でエ
ッチングし不必要な部分の導電膜のみを剥離し、その
後、アルカリ液等の剥離剤により該パターン状マスクを
溶解等により除去するという、いくつもの工程を重ねる
方法とは大いに異なる。もちろん細線を重ねての面剥離
も可能だが、多面積の場合効率的ではない。
[0008] Conventionally, a conductive film surface of a transparent conductive film is formed with a desired pattern mask, and then etched with an acid solution to peel off only unnecessary portions of the conductive film. It is very different from a method of repeating a number of steps of removing the pattern mask by dissolving or the like with an agent. Of course, it is possible to peel the surface by overlapping thin wires, but it is not efficient in the case of a large area.

【0009】装置としては、フィルムを固持し2次元で
可動するテーブルとレーザー装置が必要となる。テーブ
ルはフィルムのうねりを解消するため吸引することが望
ましい。レーザー装置の照射条件としては、テーブルと
の距離、出力、連続照射かパルス照射かの方法を設定す
る。パルス照射の場合はパルス周波数も設定する。テー
ブルは移動速度、移動距離、移動方向の移動条件を設定
する。いずれの設定条件もコントローラに入力して自動
化すればよい。条件が設定されれば、フィルムエッジや
基準穴で位置合せした透明導電性フィルムをテーブルに
固定し、テーブルを移動しながらレーザー照射すれば細
線状パターニングが行なわれる。もちろんテーブルが固
定で、レーザー光側が可動で照射してもよいし、テーブ
ルに巻き出し及び巻き取り装置を設置すればロール状フ
ィルムの加工も可能である。レーザー加工でパターニン
グしたフィルムは、生産工程でマスク材の残渣、抵抗劣
化が起こり得なく、ヒーターやタッチパネルに好適なも
のとなる。後工程として、導電性インクでの引き回し回
路印刷や、引き回し回路への絶縁印刷を施す場合があ
る。
As a device, a table and a laser device which hold the film and can move in two dimensions are required. It is desirable that the table be sucked to eliminate the undulation of the film. As the irradiation conditions of the laser device, the distance to the table, the output, and the method of continuous irradiation or pulse irradiation are set. In the case of pulse irradiation, the pulse frequency is also set. The table sets the moving speed, moving distance, and moving conditions of the moving direction. All the setting conditions may be input to the controller and automated. If the conditions are set, the transparent conductive film positioned at the film edge or the reference hole is fixed to the table, and laser irradiation is performed while moving the table to perform fine line patterning. Of course, the table may be fixed and the laser beam side may be movable, and irradiation may be performed. If a winding-up and winding-up device is installed on the table, processing of a roll film is also possible. The film patterned by the laser processing is suitable for a heater or a touch panel, since no residue of the mask material and resistance deterioration occur in the production process. As a post-process, there is a case in which a wiring circuit is printed with a conductive ink or an insulating printing is performed on the wiring circuit.

【0010】[0010]

【実施例】(実施例1)レーザー装置としてはYAGレーザ
ーや炭酸レーザー等があるが、フィルムへの熱等による
ダメージの少ないYAGレーザーを選択した。使用したYAG
レーザーの発振波長は1.064μmの近赤外光で、ビ
ームが最も集光したところのビーム直径は0.45mm
となる光学系を組み合わせている。Qスイッチで尖頭値
の大きいレーザーパルス光を照射することとし、テーブ
ル上に吸着固定されたフィルムはレーザーのパルスと同
調して等ピッチ移動する。つまり1パルスの信号が入れ
ば、直径0.45mmの円面で照射され、テーブルが1
ピッチ移動する。1ピッチ移動量は0.45mm以下
で、図2のように円と円とが重なるよう決定する。よっ
て照射幅は広い箇所と狭い箇所の繰り返しとなり、広い
箇所は円の直径、狭い箇所は円と円の交点間の距離とな
る。
EXAMPLES (Example 1) As a laser device, there are a YAG laser, a carbon dioxide laser, and the like, but a YAG laser that causes less damage to a film due to heat or the like was selected. YAG used
The oscillation wavelength of the laser is near infrared light of 1.064 μm, and the beam diameter where the beam is most focused is 0.45 mm.
Are combined. The laser pulse light having a large peak value is irradiated by the Q switch, and the film sucked and fixed on the table moves at the same pitch in synchronization with the laser pulse. That is, if a signal of one pulse is input, irradiation is performed on a circular surface having a diameter of 0.45 mm, and
Move the pitch. The amount of one pitch movement is 0.45 mm or less and is determined so that the circles overlap each other as shown in FIG. Therefore, the irradiation width is a repetition of a wide portion and a narrow portion, and the wide portion is the diameter of the circle, and the narrow portion is the distance between the intersections of the circles.

【0011】実施例1のフィルム基材としては、厚み1
88μmのPETフィルムを用いた。そのフィルムに、
スパッタ法によりシート抵抗300(Ω/□)のITO膜
を成膜した。パターニング加工条件は、レーザー発振出
力23W、レーザー発振パルス周波数3KHz、テーブ
ル移動速度1026mm/Sに設定した。1パルス当たり
の1ピッチ移動量は、テーブル移動速度とレーザー発振
パルス周波数とから計算され、0.342mmとなる。
この場合、照射幅の広い箇所は0.45mmであるが、
狭い箇所である円と円の交点間の距離を計算すると約
0.292mmとなる。テーブル移動距離を直線30c
mとして細線状パターニングを実施したところ、照射幅
の広い箇所は0.45mmから0.41mmの範囲、照
射幅の狭い箇所で0.32mmから0.28mmの範囲
で導電面が連続的に剥離されていた。外観的には、下地
のフィルム溶融に起因する1μmを越える盛り上がりや
凹みはなく、導電面のマイクロクラックの発生もなかっ
た。電気的には、直流25ボルトを印加したときの絶縁
抵抗は、100MΩ以上であった。温度60℃、湿度9
0%で120時間経過後も、外観、絶縁抵抗に変化はな
く良好であった。
The film substrate of Example 1 has a thickness of 1
An 88 μm PET film was used. On that film,
An ITO film having a sheet resistance of 300 (Ω / □) was formed by a sputtering method. The patterning processing conditions were set to a laser oscillation output of 23 W, a laser oscillation pulse frequency of 3 KHz, and a table moving speed of 1026 mm / S. One pitch movement amount per one pulse is calculated from the table movement speed and the laser oscillation pulse frequency, and is 0.342 mm.
In this case, the portion where the irradiation width is wide is 0.45 mm,
The distance between the intersections of the circles, which are narrow places, is approximately 0.292 mm. Table moving distance is straight line 30c
When the thin line patterning was performed as m, the conductive surface was continuously peeled in a wide irradiation range from 0.45 mm to 0.41 mm in a wide irradiation area and in a narrow irradiation range from 0.32 mm to 0.28 mm in a narrow irradiation width. I was In terms of appearance, there was no swelling or dent exceeding 1 μm due to melting of the underlying film, and no microcracks were generated on the conductive surface. Electrically, the insulation resistance when a direct current of 25 volts was applied was 100 MΩ or more. Temperature 60 ° C, Humidity 9
Even after 120 hours at 0%, the appearance and the insulation resistance were good without any change.

【0012】(実施例2)フィルム基材としては、厚み
188μm、ノルボルネン系の熱可塑性透明樹脂でなる
JSR社製のアートンフィルム(「アートン」は同社の登
録商標)を用いた。そのフィルムにスパッタ法によりシ
ート抵抗300(Ω/□)のITO膜を成膜した。装置及
びレーザー発振出力・レーザー発振パルス周波数・テー
ブル移動速度・テーブル移動距離の全条件は、実施例1
と同一とした。結果は実施例1と同じく良好であった。
(Example 2) As a film substrate, an arton film made of JSR Co., Ltd. ("ARTON" is a registered trademark of the company) made of a norbornene-based thermoplastic transparent resin having a thickness of 188 μm was used. An ITO film having a sheet resistance of 300 (Ω / □) was formed on the film by a sputtering method. All conditions of the apparatus and laser oscillation output, laser oscillation pulse frequency, table moving speed, and table moving distance are described in Example 1.
And the same. The results were as good as in Example 1.

【0013】(実施例3)フィルム基材としては、厚み
188μm、平均粗さ最大2μmに凹凸加工したPET
フィルムを用いた。そのフィルムの凹凸加工面に、スパ
ッタ法によりシート抵抗300(Ω/□)のITO膜を成
膜した。装置及びレーザー発振パルス周波数・テーブル
移動速度・テーブル移動距離の各条件は、実施例1と同
一としたが、レーザー発振出力は34Wとした。結果は
実施例1と同じく良好であった。
(Example 3) As a film substrate, PET having a thickness of 188 μm and an average roughness of 2 μm at the maximum was used.
A film was used. An ITO film having a sheet resistance of 300 (Ω / □) was formed on the uneven surface of the film by a sputtering method. The conditions of the apparatus and the laser oscillation pulse frequency, table moving speed, and table moving distance were the same as those in Example 1, but the laser oscillation output was 34 W. The results were as good as in Example 1.

【0014】(比較例1)実施例3でのスパッタしたフ
ィルムで、装置及びレーザー発振出力・レーザー発振パ
ルス周波数・テーブル移動速度・テーブル移動距離の全
条件を、実施例1と同一とした。結果は細線状に剥離は
されたが、完全に剥離されているのは中央の0.2〜
0.3mm幅で、エッジ部では部分的に導電膜が残っ
た。
(Comparative Example 1) With the sputtered film of Example 3, all the conditions of the apparatus, laser oscillation output, laser oscillation pulse frequency, table moving speed, and table moving distance were the same as in Example 1. The result was peeled in a thin line shape, but completely peeled off was 0.2 ~
At a width of 0.3 mm, the conductive film was partially left at the edge.

【0015】[0015]

【発明の効果】本発明は、以上説明したような形態で実
施され、以下に記載されるような効果を奏す。すなわち
本発明は、酸化インジュウム錫膜などからなる透明導電
膜をパターニングする際、透明導電膜上に所望のパター
ン状マスクを形成し、しかる後にエッチングし、その
後、剥離剤により該パターン状マスクを除去すると言う
従来の加工がないので、工程が大幅に短縮される。そし
て機能的には透明導電膜の劣化やオーバーエッチング、
エッチング不足が生じなく、タッチパネルの場合であれ
ば入力精度,検出精度に優れたものとなる。またマスク
材による残渣や汚れ、傷によるトラブルも無く歩留は向
上する。当然エッチングや剥離、洗浄、水処理の設備や
メンテナンスは不要となり、酸、アルカリの化学薬品を
扱わない環境となる。加えて、マスクの版が不要である
ので、版の費用、製作時間はもちろん、装着段取り時間
も要らなく、その効果はきわめて大である。
The present invention is embodied in the form described above, and has the following effects. That is, in the present invention, when patterning a transparent conductive film made of an indium tin oxide film or the like, a desired pattern mask is formed on the transparent conductive film, followed by etching, and thereafter, the pattern mask is removed with a release agent. Since there is no conventional processing, the process is greatly reduced. And functionally, the deterioration and over-etching of the transparent conductive film,
In the case of a touch panel, shortage of etching does not occur, and input accuracy and detection accuracy are excellent. Further, the yield is improved without any trouble due to the residue, dirt and scratches caused by the mask material. Naturally, equipment and maintenance for etching, stripping, cleaning, and water treatment are not required, and the environment does not handle acid or alkali chemicals. In addition, since a mask plate is not required, not only the cost and production time of the plate, but also the mounting setup time are not required, and the effect is extremely large.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)、(b)は細線状パターニングの一例を示
す説明図
FIGS. 1A and 1B are explanatory diagrams showing an example of fine line patterning.

【図2】細線状パターニングのレーザー照射の形状を示
す説明図
FIG. 2 is an explanatory view showing the shape of laser irradiation for fine line patterning.

【図3】従来のパターニングの一例を示す説明図FIG. 3 is an explanatory view showing an example of conventional patterning.

【符号の説明】[Explanation of symbols]

10:透明導電性フィルム 11:透明導電性フィルムの導電膜部 11a:透明導電性フィルムの導電膜部(通電部) 11b、11c:透明導電性フィルムの導電膜部(リー
ド部) 12:透明導電性フィルムの導電膜が剥離された部分 20:パルス毎に円面が移動して、レーザー照射される
部分
10: transparent conductive film 11: conductive film portion of transparent conductive film 11a: conductive film portion of transparent conductive film (current-carrying portion) 11b, 11c: conductive film portion of transparent conductive film (lead portion) 12: transparent conductive film 20: The part where the circular surface moves and the laser is irradiated every pulse

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】少なくとも片面に透明導電膜を有し、その
透明導電膜面をマスキング材で遮蔽隔離させることな
く、1mm幅以下の細線状に導電膜を剥離することによ
り、通電部及び通電のためのリード部をパターニングし
た透明導電性フィルム。
A transparent conductive film is provided on at least one surface, and the conductive film is peeled into a thin line having a width of 1 mm or less without shielding and isolating the transparent conductive film surface with a masking material. Transparent conductive film with a patterned lead.
【請求項2】透明導電膜面には微細な凹凸を有する請求
項1記載の透明導電性フィルム。
2. The transparent conductive film according to claim 1, wherein the transparent conductive film surface has fine irregularities.
【請求項3】透明導電膜面の導電膜の下には、アクリル
系樹脂コーティング層を有する請求項1または請求項2
に記載の透明導電性フィルム。
3. The transparent conductive film surface has an acrylic resin coating layer under the conductive film.
3. The transparent conductive film according to item 1.
【請求項4】透明導電膜を有しない面にはコーティング
層を有する請求項1乃至請求項3に記載の透明導電性フ
ィルム。
4. The transparent conductive film according to claim 1, wherein a coating layer is provided on a surface having no transparent conductive film.
【請求項5】透明タッチパネルに用いられる請求項1乃
至請求項4に記載の透明導電性フィルム。
5. The transparent conductive film according to claim 1, which is used for a transparent touch panel.
【請求項6】レーザー等の光加工による請求項1乃至請
求項5に記載の透明導電性フィルム。
6. The transparent conductive film according to claim 1, wherein the transparent conductive film is formed by optical processing such as a laser.
JP2000013111A 2000-01-21 2000-01-21 Transparent conductive film Pending JP2001202826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000013111A JP2001202826A (en) 2000-01-21 2000-01-21 Transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000013111A JP2001202826A (en) 2000-01-21 2000-01-21 Transparent conductive film

Publications (1)

Publication Number Publication Date
JP2001202826A true JP2001202826A (en) 2001-07-27

Family

ID=18540750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000013111A Pending JP2001202826A (en) 2000-01-21 2000-01-21 Transparent conductive film

Country Status (1)

Country Link
JP (1) JP2001202826A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183386A (en) * 2003-12-16 2005-07-07 Asulab Sa Manufacturing method of transparent element having invisible electrode
JP2006351531A (en) * 2005-06-16 2006-12-28 Asulab Sa Manufacturing method for transparent device having transparent electrode
WO2007049653A1 (en) * 2005-10-28 2007-05-03 Asahi Glass Co., Ltd. Transparent substrate with thin film and method for manufacturing transparent substrate with circuit pattern wherein such transparent substrate with thin film is used
JP2013016428A (en) * 2011-07-06 2013-01-24 Shin Etsu Polymer Co Ltd Method for forming insulating part and method for manufacturing conductive pattern formation substrate
CN104036847A (en) * 2014-06-25 2014-09-10 厦门天马微电子有限公司 Panel and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02259727A (en) * 1989-03-31 1990-10-22 Ricoh Co Ltd Formation of pattern of liquid crystal display element
JPH04107899A (en) * 1990-08-27 1992-04-09 Sumitomo Electric Ind Ltd Formation of conductor circuit
JPH0656935U (en) * 1992-11-11 1994-08-05 グンゼ株式会社 Pen input touch panel
JPH11250764A (en) * 1998-02-27 1999-09-17 Gunze Ltd Resistant film type transparent touch panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02259727A (en) * 1989-03-31 1990-10-22 Ricoh Co Ltd Formation of pattern of liquid crystal display element
JPH04107899A (en) * 1990-08-27 1992-04-09 Sumitomo Electric Ind Ltd Formation of conductor circuit
JPH0656935U (en) * 1992-11-11 1994-08-05 グンゼ株式会社 Pen input touch panel
JPH11250764A (en) * 1998-02-27 1999-09-17 Gunze Ltd Resistant film type transparent touch panel

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183386A (en) * 2003-12-16 2005-07-07 Asulab Sa Manufacturing method of transparent element having invisible electrode
JP4689259B2 (en) * 2003-12-16 2011-05-25 アスラブ・エス アー Method for producing transparent element with invisible electrode
KR101133329B1 (en) * 2003-12-16 2012-04-05 아스라브 쏘시에떼 아노님 Method for manufacturing a transparent element with invisible electrodes
JP2006351531A (en) * 2005-06-16 2006-12-28 Asulab Sa Manufacturing method for transparent device having transparent electrode
KR101232979B1 (en) 2005-06-16 2013-02-13 아스라브 쏘시에떼 아노님 Method of manufacturing a transparent element including transparent electrodes
WO2007049653A1 (en) * 2005-10-28 2007-05-03 Asahi Glass Co., Ltd. Transparent substrate with thin film and method for manufacturing transparent substrate with circuit pattern wherein such transparent substrate with thin film is used
JP2007123076A (en) * 2005-10-28 2007-05-17 Osaka Univ Electronic circuit device and its manufacturing method
KR101282580B1 (en) * 2005-10-28 2013-07-04 아사히 가라스 가부시키가이샤 Method for manufacturing transparent substrate with circuit pattern
JP2013016428A (en) * 2011-07-06 2013-01-24 Shin Etsu Polymer Co Ltd Method for forming insulating part and method for manufacturing conductive pattern formation substrate
CN104036847A (en) * 2014-06-25 2014-09-10 厦门天马微电子有限公司 Panel and manufacturing method thereof

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