JP2001199955A5 - - Google Patents
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- JP2001199955A5 JP2001199955A5 JP2000336666A JP2000336666A JP2001199955A5 JP 2001199955 A5 JP2001199955 A5 JP 2001199955A5 JP 2000336666 A JP2000336666 A JP 2000336666A JP 2000336666 A JP2000336666 A JP 2000336666A JP 2001199955 A5 JP2001199955 A5 JP 2001199955A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000336666A JP4029558B2 (ja) | 1999-11-09 | 2000-11-02 | Ｎ−スルホニルオキシイミド化合物およびそれを用いた感放射線性樹脂組成物 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31765299 | 1999-11-09 | ||
| JP11-317652 | 1999-11-09 | ||
| JP2000336666A JP4029558B2 (ja) | 1999-11-09 | 2000-11-02 | Ｎ−スルホニルオキシイミド化合物およびそれを用いた感放射線性樹脂組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001199955A JP2001199955A (ja) | 2001-07-24 |
| JP2001199955A5 true JP2001199955A5 (fr) | 2004-08-19 |
| JP4029558B2 JP4029558B2 (ja) | 2008-01-09 |
Family
ID=26569092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000336666A Expired - Fee Related JP4029558B2 (ja) | 1999-11-09 | 2000-11-02 | Ｎ−スルホニルオキシイミド化合物およびそれを用いた感放射線性樹脂組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4029558B2 (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482567B1 (en) * | 2000-08-25 | 2002-11-19 | Shipley Company, L.L.C. | Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same |
| WO2003045915A1 (fr) | 2001-11-30 | 2003-06-05 | Wako Pure Chemical Industries, Ltd. | Compose de bisimide, generateur d'acide et composition de reserve contenant ledit compose, procede de formation de motif au moyen de ladite composition |
| JP4123920B2 (ja) * | 2001-12-20 | 2008-07-23 | Ｊｓｒ株式会社 | 共重合体、重合体混合物および感放射線性樹脂組成物 |
| KR100698444B1 (ko) | 2002-03-22 | 2007-03-23 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 화학 증폭 레지스트 재료용 광산 발생제, 및 이것을사용한 레지스트 재료 및 패턴 형성 방법 |
| KR20050107599A (ko) * | 2003-03-05 | 2005-11-14 | 제이에스알 가부시끼가이샤 | 산 발생제, 술폰산, 술포닐할라이드 화합물 및 감방사선성수지 조성물 |
| JP2004307387A (ja) * | 2003-04-07 | 2004-11-04 | Tosoh F-Tech Inc | ２−（ビシクロ［２．２．１］ヘプト−２−イル）−１，１−ジフルオロエチルスルフィン酸塩または２−（ビシクロ［２．２．１］ヘプト−２−イル）−１，１−ジフルオロエチルスルホン酸塩およびそれらの製造方法 |
| KR100574495B1 (ko) | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
| WO2008029673A1 (fr) * | 2006-09-08 | 2008-03-13 | Jsr Corporation | Composition sensible au rayonnement et procédé de fabrication d'un composé de faible masse moléculaire destiné à être utilisé dans ladite composition |
| US8283106B2 (en) | 2007-11-01 | 2012-10-09 | Central Glass Company, Limited | Sulfonic acid salt and derivative thereof, photoacid generator agent, and resist material and pattern formation method using the photoacid generator agent |
| JP4577354B2 (ja) * | 2007-12-18 | 2010-11-10 | Ｊｓｒ株式会社 | ポジ型感放射線性樹脂組成物およびネガ型感放射線性樹脂組成物 |
| US10365560B2 (en) * | 2015-03-31 | 2019-07-30 | Sumitomo Chemical Company, Limited | Resist composition and method for producing resist pattern |
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2000
- 2000-11-02 JP JP2000336666A patent/JP4029558B2/ja not_active Expired - Fee Related