JP2001196313A - Semiconductor processing chamber and control method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable an accurater measurement of a pressure and an accurater control of the pressure in a semiconductor processing process. SOLUTION: A semiconductor processing chamber is provided with a first chamber 53 which is provided with a gas introducing vent 71 and is arranged with a wafer 58, a second chamber 54 connected with a gas exhaust means 62, a baffle member 52 to demarcate the chamber 53 and the chamber 54 at least one aperture for gas circulation provided in the member 52 and a control means to control the aperture area of the aperture for gas circulation.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a semiconductor processing chamber and a control method thereof. More specifically, the present invention relates to a semiconductor processing chamber for performing processing such as forming a thin film on a wafer surface or performing etching while controlling the pressure and flow rate of gas in the chamber, and a control method therefor.

[0002]

2. Description of the Related Art Semiconductor devices are manufactured through processing steps such as plasma etching, reactive ion etching, and various chemical vapor depositions. Most of these processing steps are performed in a semiconductor processing chamber. Gas exhaust means such as a vacuum pump is connected to the semiconductor processing chamber, and a single or plural kinds of gases are continuously circulated in the chamber by generating a negative pressure. In order to promote an even distribution of the flowing gas, a baffle plate or an exhaust plate is installed horizontally in the semiconductor processing chamber, and the inside of the semiconductor processing chamber is separated into two upper and lower chambers.

FIG. 8 shows a reactive ion etching (RI)
1 shows a schematic configuration of a conventional semiconductor processing chamber used in E). The semiconductor processing chamber 11 is separated into an upper chamber 13 and a lower chamber 14 by a horizontally arranged baffle plate (or exhaust plate) 12.
Further, the semiconductor processing chamber 11 is provided with a cathode 15, a focusing ring 16, and an electrostatic chuck (ESC) 17 on which a wafer 18 is placed. The semiconductor processing chamber 11 is surrounded by a chamber wall 19 and a chamber lid 20.

The semiconductor processing chamber 11 is connected to a turbo pump 22 as gas exhaust means and a throttle valve 23 for controlling a gas flow rate.

FIG. 9 shows the baffle plate 12. The baffle plate 12 is a ring-shaped plate having a plurality of gas flow openings 24 elongated in the radial direction. The baffle plate 12 is insulated from the cathode 15 by an insulating ring 21.

A pressure gauge 25 is provided for controlling the pressure in the semiconductor processing chamber 11 and the gas flow rate to the semiconductor processing chamber 11. The measurement value of the pressure gauge 25 is an analog signal. After the analog signal is converted into a digital signal by an A / D converter,
Supplied to A preset control target value is stored in the memory of the controller 27. The controller compares the signal supplied from the pressure gauge 25 with the control target value,
The throttle valve 23 is controlled so that the gas pressure in the semiconductor processing chamber 11 is maintained at or near a control target value.
A control signal is sent to the throttle valve 23 to operate the opening of the throttle valve (FIG. 10). In the course of a plasma processing process such as plasma etching or plasma enhanced chemical vapor deposition, instability of pressure measurement may be caused by plasma or ionized gas. Alternatively, the influence of the ionized gas is eliminated.

[0007]

As a result of repeating various experiments, the present inventors have found that repeated use of the semiconductor processing chamber 11 results in the formation of particulate matter such as polymer generated in the course of a plasma etching step or the like. It has been found that the substance may be deposited on the baffle plate 12 and reduce the opening area of the gas flow opening 24 of the baffle plate 12 through which the reaction gas flows. When the opening area of the gas circulation opening 24 is reduced, the pressure gauge 25 installed in the lower chamber 14
It may be difficult to accurately detect the pressure in the upper chamber 13 on the basis of the measured value. For this reason, the present inventors considered that the pressure in the semiconductor processing chamber 11 could not be appropriately controlled. According to this idea,
In many cases, the phenomenon that the processing yield rate is deteriorated can be explained. As the processing of semiconductor devices enters the sub-micron era that requires accurate control of gas pressure in the semiconductor processing chamber 11, the deterioration of the processing yield rate becomes increasingly noticeable and serious, and as the production of semiconductors increases, The need to improve processing yield is becoming increasingly important.

In recent years, as the use of general-purpose semiconductor devices has been promoted, the profit margin for processing semiconductor devices tends to gradually decrease. For this reason, it is important to pay close attention to all the process parameters that affect the defect or rejection rate of the processed product and reduce the manufacturing cost. Since inaccurate pressure control in the semiconductor processing chamber 11 has a significant effect on product rejection rates, it is important to carefully consider the above problems, develop an appropriate solution, and increase product yield. is important.

SUMMARY OF THE INVENTION It is a main object of the present invention to provide a semiconductor processing chamber and a control method thereof that enable more accurate pressure measurement and control in a semiconductor processing process and reduce a product rejection rate. It is another object of the present invention to provide a semiconductor processing chamber capable of controlling a flow rate of a reaction gas with high accuracy and a control method thereof.

[0010]

In order to achieve the above object, a semiconductor processing chamber according to claim 1 has a first chamber in which a gas inlet is provided and a wafer is arranged;
A second chamber connected to the gas discharge means, a baffle member defining the first chamber and the second chamber, at least one gas flow opening provided in the baffle member, It is provided with control means for adjusting the opening area of the opening.

Therefore, when the gas discharging means suctions, the pressure in the first and second chambers becomes negative, and gas is introduced from the gas inlet. The gas introduced into the first chamber from the gas introduction port is subjected to processing such as forming a thin film on the surface of the wafer or performing etching, and then passes through the gas flow opening of the baffle member to form a gas in the second chamber. Flows into
It is exhausted by gas exhaust means. The reactant of the gas for processing the wafer surface also deposits on the surface of the baffle member, and reduces the opening area of the gas flow opening. The control means adjusts the opening area of the gas flow opening so as to cancel the decrease in the opening area of the gas flow opening caused by the deposition of the reactant.

Further, the semiconductor processing chamber according to the present invention is provided with a first pressure gauge for measuring a pressure in the second chamber and a second pressure gauge for measuring a pressure in the first chamber. The control means adjusts the opening area of the gas flow opening so that the difference between the measured values of the first and second pressure gauges becomes the first target value.

[0013] Therefore, when the gas discharge means suctions, a slight pressure difference is generated between the first chamber and the second chamber defined by the baffle member and communicated by the gas flow opening. This pressure difference increases as the opening area of the gas flow opening decreases due to the deposition of a reactant, and deviates from a designed predetermined value. The control means detects a pressure difference between the first chamber and the second chamber based on the first and second pressure gauges, and controls the gas flow so that the detected pressure difference matches or approaches a first target value. Adjust the opening area of the opening.

Further, in the semiconductor processing chamber according to the third aspect, the first target value is a difference between the measured values of the first and second pressure gauges when measured immediately after cleaning. Therefore, the first target value is the first target value measured in a state where the opening area of the gas circulation opening is a designed value.
And the second pressure gauge. That is, since the pressure difference between the first chamber and the second chamber also becomes a predetermined value as designed by setting the opening area of the gas flow opening to a designed value, the control means sets the first target value. , The pressure difference between the first chamber and the second chamber can be set to a predetermined value as designed.

Further, the semiconductor processing chamber according to a fourth aspect of the present invention is provided with a flow meter for measuring a flow rate of a gas supplied from a gas inlet, and the gas discharge means has a measured value of the flow meter as a second target value. The gas is sucked. Therefore, the flow rate of the gas supplied to the semiconductor processing chamber is measured by the flow meter, and the gas exhausting means sucks the gas such that the measured value matches or approaches the second target value. That is, the control is performed not only for the pressure difference between the first chamber and the second chamber, but also for the flow rate of the gas introduced into the first chamber.

In this case, the second target value may be a measured value of the flow meter when measured in a state immediately after cleaning, as in the semiconductor processing chamber according to the fifth aspect.

According to a sixth aspect of the present invention, there is provided a semiconductor processing chamber, wherein a first pressure gauge for measuring a pressure in the second chamber and a flow control valve disposed between the second chamber and the gas exhaust means. And the flow rate of the gas sucked from the second chamber to the gas discharge means is controlled by the flow control valve so that the value measured by the first pressure gauge becomes the third target value. Therefore, the pressure in the second chamber is measured by the first pressure gauge, and the flow rate of the gas sucked by the gas discharging means is controlled by the flow control valve so that the measured value matches or approaches the third target value. Adjust. That is, the first
In addition to the pressure difference between the first and second chambers, the second
The control is performed also for the pressure inside the chamber.

In a semiconductor processing chamber according to a seventh aspect of the present invention, the baffle member has a plurality of baffle plates supported coaxially and rotatable relative to each other, and the baffle plate has a notch serving as an opening for gas flow. Is provided,
By relatively rotating the baffle plate, the opening area of the gas flow opening is changed. Therefore, the opening area of the gas circulation opening can be adjusted only by changing the amount of overlap of the notch by relatively rotating the baffle plate.

In the semiconductor processing chamber according to the present invention, the baffle member has two baffle plates supported coaxially and rotatable relative to each other, and one of the baffle plates has a hole serving as a gas flow opening. The other baffle plate is provided with fins capable of closing the holes, and by rotating these baffle plates relative to each other, the opening area of the gas circulation opening is changed. Therefore, the opening area of the gas flow opening can be adjusted only by changing the amount of overlap between the hole and the fin by rotating the two baffle plates relative to each other.

The semiconductor processing chamber according to the ninth aspect is used for a chemical vapor deposition or plasma etching operation. Therefore, chemical vapor deposition (CVD) and plasma etching are performed using the semiconductor processing chamber of the present application.

Further, in the method for controlling a semiconductor processing chamber according to the present invention, a first chamber provided with a gas inlet and a wafer is disposed; a second chamber connected to a gas discharge means; A semiconductor processing chamber comprising: a baffle member defining a first chamber and a second chamber; at least one gas flow opening provided in the baffle member; and control means for adjusting an opening area of the gas flow opening. And a step of adjusting the opening area of the gas flow opening by the control means. Therefore, using the semiconductor processing chamber described above,
The wafer is processed by adjusting the opening area of the gas flow opening of the baffle member.

[0022] In this case, the step of adjusting the opening area of the gas flow opening may be such that the pressure difference between the first and second chambers is equal to the first target. The opening area of the gas flow opening may be adjusted so as to have a value.
As in the control method of the semiconductor processing chamber described above, the first target value may be a pressure difference between the first and second chambers when measured in a state immediately after cleaning the semiconductor processing chamber.

According to a thirteenth aspect of the present invention, there is provided a method for controlling a semiconductor processing chamber, comprising: a first chamber provided with a gas inlet and a wafer; a second chamber connected to a gas discharge means; A semiconductor processing chamber comprising: a baffle member defining a first chamber and a second chamber; at least one gas flow opening provided in the baffle member; and control means for adjusting an opening area of the gas flow opening. And a step of adjusting the suction force of the gas discharging means so that the flow rate of the gas supplied from the gas inlet becomes the second target value. Therefore, the wafer is processed while the suction force of the gas discharging means is adjusted.

In this case, the gas supplied from the gas inlet when the second target value is measured in a state immediately after the cleaning of the semiconductor processing chamber as in the semiconductor processing chamber control method according to the present invention. May be used.

According to a fifteenth aspect of the present invention, there is provided a method for controlling a semiconductor processing chamber, comprising: a first chamber provided with a gas inlet and a wafer disposed therein; a second chamber connected to gas exhaust means; A semiconductor processing chamber comprising: a baffle member defining a first chamber and a second chamber; at least one gas flow opening provided in the baffle member; and control means for adjusting an opening area of the gas flow opening. And controlling the flow rate of the gas sucked from the second chamber to the gas exhaust means so that the pressure in the second chamber becomes the third target value. Therefore, the wafer is processed while controlling the flow rate of the gas sucked from the second chamber to the gas discharging means.

Further, a semiconductor processing chamber control method according to a sixteenth aspect of the present invention includes a plurality of baffle plates supported coaxially and rotatable relative to each other, and the baffle plates have cutouts serving as gas flow openings. And a step of changing the opening area of the gas flow opening by relatively rotating the baffle plate. Therefore,
When the baffle plate is relatively rotated to change the amount of overlap of the notch, the opening area of the gas flow opening can be adjusted.

[0027] According to a seventeenth aspect of the present invention, in the method for controlling a semiconductor processing chamber, the semiconductor processing chamber is supported coaxially and is relatively rotatable.
Preparing a baffle member having a plurality of baffle plates, wherein one baffle plate is provided with a hole serving as a gas flow opening, and the other baffle plate is provided with a fin capable of closing the hole; And the step of changing the opening area of the gas flow opening by relatively rotating the baffle plate. Therefore, when the two baffle plates are relatively rotated to change the amount of overlap between the hole and the fin, the opening area of the gas flow opening can be adjusted.

Further, a method for controlling a semiconductor processing chamber according to claim 18 is used for a chemical vapor deposition or plasma etching operation. Therefore, chemical vapor deposition (CVD) and plasma etching are performed using the semiconductor processing chamber of the present application.

[0029]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of the present invention will be described below in detail based on the best mode shown in the drawings.

FIG. 1 shows an example of a preferred embodiment of a semiconductor processing chamber to which the present invention is applied. The semiconductor processing chamber 51 is used for, for example, a chemical vapor deposition (CVD) or plasma etching operation.
Is provided and a first chamber 53 in which a wafer 58 is disposed, a second chamber 54 connected to gas exhaust means 62, and a baffle member 52 defining the first chamber 53 and the second chamber 54. And at least one gas flow opening 72 provided in the baffle member 52, and control means 26 for adjusting the opening area of the gas flow opening 72.

The semiconductor processing chamber 51 has a second
Pressure gauge 64 for measuring the pressure in chamber 54
And a second pressure gauge 65 for measuring the pressure in the first chamber 53. The control means 26 controls the first and second pressure gauges 6.
The opening area of the gas flow opening 72 is adjusted so that the difference between the measured values of 4, 65 becomes the first target value A. In the present embodiment, the first target value A is a first target value A when the measurement is performed using the semiconductor processing chamber immediately after cleaning.
And the measured values of the second pressure gauges 64 and 65.

That is, the semiconductor processing chamber 51 has an upper chamber (the first chamber) by a baffle member 52 disposed horizontally.
Chamber 53) and lower chamber (second chamber)
54. In the semiconductor processing chamber 51,
A cathode 55, a focusing ring 56, and an electrostatic chuck (ESC) 57 on which a wafer 58 is mounted are provided. The semiconductor processing chamber 51 is surrounded by a chamber wall 59 and a chamber lid 60. The semiconductor processing chamber 5
1 is heated by a high-frequency induction heater (not shown).

The gas exhaust means is, for example, a turbo vacuum pump 62 for sucking and exhausting gas in the semiconductor processing chamber 51.

FIG. 2 shows the baffle member. The baffle member 52 has a plurality of, for example, two baffle plates 31 and 32 supported coaxially and rotatable relative to each other, and the baffle plates 31 and 32 have cutouts 31 a and 32 a serving as gas openings 72. The opening area of the gas flow opening 72 can be changed by relatively rotating the baffle plates 31 and 32.

That is, the baffle member 52 includes two baffle plates 31 and 32. The two baffle plates 31 and 32 have the same shape, and by rotating the other baffle plate 32 with respect to the one baffle plate 31 fixed to the electrostatic chuck 57, the notches 31a and 32a are formed. The opening area of the gas flow opening 72 can be changed by changing the amount of overlap. The baffle plate 32 is rotated by a drive mechanism (not shown) controlled by the control means 26. The drive mechanism includes, for example, a motor and a gear train that transmits the rotation of the motor to the baffle plate 32.

Next, a method of controlling the semiconductor processing chamber 51 will be described.

This control method includes a first chamber 53 in which a gas inlet 71 is provided and a wafer 58 is disposed,
A second chamber 54 connected to the gas discharge means 62;
A baffle member 52 defining a first chamber 53 and a second chamber, at least one gas flow opening 72 provided in the baffle member 52, and a gas flow opening 72
And a step of adjusting the opening area of the gas flow opening 72 by the control means 26. The step of adjusting the opening area of the gas flow opening 72 is performed by the first and second chambers 53 and 5.
The opening area of the gas flow opening 72 is adjusted so that the pressure difference in the nozzle 4 becomes the first target value A.

That is, first, the semiconductor processing chamber 51 is prepared (step of preparing the semiconductor processing chamber 51).
At this time, the step of preparing the baffle member 52 is also performed at the same time. Then, in the step of adjusting the opening area of the gas flow opening 72, first, the gas discharge means 62 is started to make the first and second chambers 53 and 54 have a negative pressure, and the gas is supplied from the gas inlet 71 to the second port. 1 is introduced into the chamber 53. The introduced gas is supplied to the baffle member 5.
The gas flows into the second chamber 54 from the second gas flow opening 72, and is sucked and exhausted by the gas discharging means 62.
At this time, a pressure difference is generated between the first chamber 53 and the second chamber 54 due to the presence of the baffle member 52. Although this pressure difference is extremely small, the first chamber 5 for processing the wafer 58 must be set to a value equal to or close to a predetermined value (first target value A) as designed.
3 cannot be detected with high accuracy.

The control means 26 adjusts the opening area of the gas flow opening 72 so that the pressure difference between the first chamber 53 and the second chamber 54 matches or approaches the first target value A (control). Adjusting the opening area of the gas flow opening 72 by the means 26). That is, as shown in FIG. 3, the control means 26 calculates the pressure difference between the first chamber 53 and the second chamber 54 based on the measurement values of the first and second pressure gauges 64 and 65, and calculates The pressure difference is the first target value A
The opening area of the gas flow opening 72 of the baffle member 52 is adjusted so as to coincide with or approach. The control means 26
By operating a drive mechanism (not shown), the baffle plate 32 of the baffle member 52 is swung with respect to the baffle plate 31 to adjust the opening area of the gas flow opening 72 (relative rotation of the baffle plates 31, 32). To change the opening area of the gas flow opening 72).

With the opening area of the gas flow opening 72 adjusted in this way, the switch of the electromagnetic induction heater is turned on, and the processing of the wafer 58 is started. In this state, since the opening area of the gas flow opening 72 has already been adjusted, the pressure difference between the first chamber 53 and the second chamber 54 is a predetermined value as designed or a value close thereto, The pressure in the first chamber 53 can be accurately detected based on the measurement value of the first pressure gauge 64.
That is, the influence of the particulate matter deposited on the baffle member 52 on the pressure difference between the first chamber 53 and the second chamber 54 is eliminated by adjusting the opening area of the gas flow opening 72 by the control means 26. And the wafer 58
Can be controlled with high precision in the first chamber 53 for processing the workpiece.

Here, the first target value A is set immediately after the semiconductor processing chamber 51 is cleaned. When the gas discharge means 62 is started in this state and gas is introduced from the gas inlet 71, a pressure difference between the respective chambers 53 and 54 is generated as designed. This pressure difference is detected based on the measurement values of the respective pressure gauges 64 and 65, and the first target value A
The control means 26 stores it as (reference pressure difference).

The above-described embodiment is an example of a preferred embodiment of the present invention, but is not limited thereto, and various modifications can be made without departing from the spirit of the present invention. For example, as shown in FIG. 4, a flow meter 73 for measuring the flow rate of the gas supplied from the gas inlet 71 is provided, and the measured value of the flow meter 73 is set to the second target value B by the gas discharging means 62. Gas suction may be performed. The second target value B in this case is preferably a measurement value of the flow meter 73 (the flow rate of the gas supplied from the gas inlet) measured in a state immediately after the cleaning.

That is, the first chamber 53 in which the gas inlet 71 is provided and the wafer 58 is disposed, the second chamber 54 connected to the gas discharging means 62, the first chamber 53 and the second chamber 53 A semiconductor processing chamber 51 including a baffle member 52 defining a chamber 54, at least one gas flow opening 72 provided in the baffle member 52, and control means 26 for adjusting the opening area of the gas flow opening 72. And a step of adjusting the suction force of the gas discharge means 62 so that the flow rate of the gas supplied from the gas introduction port 71 becomes the second target value B. Is also good. In this case, it is preferable that the second target value B is a flow rate of the gas supplied from the gas introduction port 71 when measured using the semiconductor processing chamber 51 immediately after cleaning.
When the flow meter 73 is provided, the second pressure gauge 6
5 may be omitted.

As shown in FIG. 5, a first pressure gauge 64 for measuring the pressure in the second chamber 54 and a flow rate control disposed between the second chamber 54 and the gas discharging means 62 are provided. A valve 63 is provided, and the flow rate of the gas sucked from the second chamber 54 to the gas discharge means 62 is controlled by the flow control valve 63 so that the measurement value of the first pressure gauge 64 becomes the third target value C. You may do it. In this case, the third target value C may be a measured value (pressure in the second chamber) of the first pressure gauge 64 when measured using the semiconductor processing chamber 51 immediately after cleaning. preferable.

That is, the first chamber 53 in which the gas inlet 71 is provided and the wafer 58 is arranged, the second chamber 54 connected to the gas discharging means 62, the first chamber 53 and the second chamber 53 A semiconductor processing chamber including a baffle member 52 that defines a chamber 54, a gas flow opening 72 provided in at least one of the baffle members 52, and a control unit 26 that adjusts an opening area of the gas flow opening 72. A semiconductor including a preparing step and a step of controlling a flow rate of a gas sucked from the second chamber 54 to the gas discharging means 62 so that the pressure in the second chamber 54 becomes the third target value C. The control method of the processing chamber 51 may be used. In this case, the third target value C is preferably a value measured by the first pressure gauge 64 when measured in a state immediately after cleaning the semiconductor processing chamber 51.

The gas flow opening 72 of the baffle member 52 is set so that the value measured by the flow meter 73 becomes the second target value B.
The opening area of the gas flow opening 72 of the baffle member 52 may be adjusted so that the measured value of the flow meter 73 becomes the second target value B as shown in FIG. The opening area is adjusted by the control means 26, and the flow rate of the gas sucked from the second chamber 54 to the gas discharge means 62 is adjusted so that the measurement value of the first pressure gauge 64 becomes the third target value C. Alternatively, the control may be performed by the flow control valve 63 operated by the valve operating means 74.
The valve operating means 74 includes, for example, a motor and a gear train that transmits the rotation of the motor to the valve body of the flow control valve 63.

The rate at which the gaseous reactant accumulates in the baffle member 52 is extremely high, and during the processing of the wafer 58, the opening area of the gas circulation opening 72 of the baffle member 52 and the gas discharge means 62 Suction force and flow control valve 63
When it becomes necessary to control the opening of the wafer 58,
These controls may be performed while performing the above processing.

It is not necessary that each of the target values A to C be a single value, but it may be a fixed range. That is, each target value A
The upper limit and the lower limit may be set to ＣC, and the above-described control may be performed when the value deviates from this range.

Further, the baffle member may be configured as shown in FIG. The baffle member 40 includes two baffle plates 41 and 4 supported coaxially and rotatable relative to each other.
The baffle plate 41 has a plurality of holes 44 which serve as gas flow openings 72 in the ring 43 of the baffle plate 41.
The other baffle plate 42 is provided with a plurality of fins 46 capable of closing each hole 44, and by rotating these baffle plates 41 and 42 relatively, the gas flow openings 7 are formed.
2 is to change the opening area. That is, by rotating the baffle plate 42 with respect to the baffle plate 41 fixed to the electrostatic chuck 57, the amount of overlap between the hole 44 and the fin 46 is changed, and
2 can be changed (step of changing the opening area of the gas flow opening 72 by relatively rotating the baffle plates 41 and 42). The baffle plate 42 is rotated by a drive mechanism (not shown) controlled by the control means 26. The fins 46 of the rotating baffle plate 42 are formed along the outer peripheral edge of the inner ring 45. In this case also, by performing the step of preparing the semiconductor processing chamber 51,
The step of preparing the baffle member 40 is also performed, as in the case described above.

[0050]

As described above, in the semiconductor processing chamber according to the first aspect, the first chamber in which the gas inlet is provided and the wafer is disposed, and the second chamber connected to the gas exhaust means. A baffle member defining a first chamber and a second chamber, at least one gas flow opening provided in the baffle member, and control means for adjusting an opening area of the gas flow opening. Therefore, by adjusting the opening area of the gas flow opening, the influence of the reactant deposited on the baffle member can be canceled from the pressure difference generated between the first chamber and the second chamber.
For this reason, the pressure of the first chamber for processing the wafer can be accurately detected, and based on this, the processing yield of the wafer can be improved.

Further, in the semiconductor processing chamber according to the present invention, a first pressure gauge for measuring a pressure in the second chamber and a second pressure gauge for measuring a pressure in the first chamber are provided. The control means adjusts the opening area of the gas flow opening so that the difference between the measured values of the first and second pressure gauges becomes the first target value. In the semiconductor processing chamber according to claim 3,
Since the first target value is the difference between the values measured by the first and second pressure gauges when the measurement is performed immediately after the cleaning, the pressure difference generated between the first chamber and the second chamber is designed. It can be set to a predetermined value. For this reason,
The pressure in the first chamber for processing the wafer can be accurately detected, and the processing yield of the wafer can be improved.

Further, the semiconductor processing chamber according to the present invention is provided with a flow meter for measuring the flow rate of the gas supplied from the gas inlet, and the gas discharge means has the measured value of the flow meter as the second target value. Since the gas is sucked as described above, the control is performed also for the flow rate of the gas introduced into the first chamber. Therefore, the gas flow rate in the first chamber for processing the wafer can be accurately controlled, and the processing yield of the wafer can be improved.

In this case, as in the case of the semiconductor processing chamber according to the fifth aspect, the second target value may be a measured value of a flow meter when measured in a state immediately after cleaning.

Further, in the semiconductor processing chamber according to the present invention, a first pressure gauge for measuring a pressure in the second chamber, and a flow control valve disposed between the second chamber and the gas exhaust means. And the flow rate of the gas sucked from the second chamber to the gas discharge means is controlled by the flow control valve so that the measurement value of the first pressure gauge becomes the third target value.
The control can be performed also for the pressure of the second chamber, and the processing yield of the wafer can be improved.

In the semiconductor processing chamber according to the present invention, the baffle member has a plurality of baffle plates supported coaxially and rotatable relative to each other, and the baffle plate has a notch serving as a gas flow opening. Since the opening area of the gas flow opening is changed by relative rotation of the baffle plate, the baffle plate is relatively rotated to change the amount of overlap of the notch, and the gas flow opening is formed. The opening area can be adjusted.

In the semiconductor processing chamber according to the present invention, the baffle member has two baffle plates supported coaxially and rotatable relative to each other, and one of the baffle plates has a hole serving as a gas flow opening. Is provided, and the other baffle plate is provided with a fin capable of closing the hole,
By rotating these baffle plates relative to each other, the opening area of the gas flow openings is changed. Therefore, only by rotating the two baffle plates relatively to change the amount of overlap between the holes and the fins, the gas flow openings are changed. Can be adjusted.

The semiconductor processing chamber according to the ninth aspect is used for a chemical vapor deposition or plasma etching operation. Using the semiconductor processing chamber, chemical vapor deposition (CVD) and plasma etching can be performed.

Further, in the method for controlling a semiconductor processing chamber according to the tenth aspect, the first chamber provided with the gas inlet and the wafer is disposed, the second chamber connected to the gas exhaust means, and the second chamber. A semiconductor processing chamber comprising: a baffle member defining a first chamber and a second chamber; at least one gas flow opening provided in the baffle member; and control means for adjusting an opening area of the gas flow opening. And the step of adjusting the opening area of the gas flow opening by the control means, so that the wafer can be processed with the opening area of the gas flow opening of the baffle member adjusted. The processing yield of the wafer can be improved.

In this case, as in the control method of the semiconductor processing chamber according to the eleventh aspect, the opening area of the gas circulation opening is adjusted so that the pressure difference between the first and second chambers becomes the first target value. The first target value may be adjusted in a state immediately after cleaning the semiconductor processing chamber, as in the method of controlling a semiconductor processing chamber according to claim 12. The pressure difference in the second chamber may be used.

In the method for controlling a semiconductor processing chamber according to the thirteenth aspect, the first chamber provided with the gas inlet and the wafer is disposed, the second chamber connected to the gas discharging means, and the second chamber. A semiconductor processing chamber comprising: a baffle member defining a first chamber and a second chamber; at least one gas flow opening provided in the baffle member; and control means for adjusting an opening area of the gas flow opening. And the step of adjusting the suction force of the gas discharge means so that the flow rate of the gas supplied from the gas inlet becomes the second target value, so that the suction force of the gas discharge means is adjusted. In this state, the wafer can be processed, and the processing yield of the wafer can be improved.

In this case, the gas supplied from the gas inlet when the second target value is measured in a state immediately after the cleaning of the semiconductor processing chamber as in the method of controlling a semiconductor processing chamber according to claim 14. May be used.

In the method for controlling a semiconductor processing chamber according to a fifteenth aspect, the first chamber provided with the gas inlet and the wafer is disposed, the second chamber connected to the gas exhaust means, and the second chamber. A semiconductor processing chamber comprising: a baffle member defining a first chamber and a second chamber; at least one gas flow opening provided in the baffle member; and control means for adjusting an opening area of the gas flow opening. And the step of controlling the flow rate of the gas sucked from the second chamber to the gas exhaust means so that the pressure in the second chamber becomes the third target value. The wafer can be processed while controlling the flow rate of the gas sucked from the second chamber to the gas discharge means, and the processing yield of the wafer can be improved.

Further, in the method for controlling a semiconductor processing chamber according to the present invention, the baffle plate includes a plurality of baffle plates supported coaxially and rotatable relative to each other, and the baffle plate has a notch serving as an opening for gas flow. Is provided, and the step of changing the opening area of the gas flow opening by relatively rotating the baffle plate is provided, so that the baffle plate is relatively rotated to overlap the notch. Only by changing the amount, the opening area of the gas flow opening can be easily adjusted.

In the method for controlling a semiconductor processing chamber according to the seventeenth aspect, two baffle plates supported coaxially and rotatable relative to each other are provided, and one of the baffle plates has an opening for gas flow. A step of preparing a baffle member in which a hole is provided and a fin capable of closing the hole in the other baffle plate, and a step of changing the opening area of the gas flow opening by relatively rotating the baffle plate. With this configuration, the opening area of the gas flow opening can be easily adjusted only by changing the amount of overlap between the hole and the fin by rotating the two baffle plates relative to each other.

Further, in the method for controlling a semiconductor processing chamber according to the eighteenth aspect, the method is used for a chemical vapor deposition or a plasma etching operation.
And a method for controlling a semiconductor processing chamber suitable for plasma etching.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing a first embodiment of a semiconductor processing chamber to which the present invention is applied.

2A and 2B show a baffle member of the semiconductor processing chamber of FIG. 1, wherein FIG. 2A is a plan view and FIG. 2B is a plan view of a baffle plate constituting the baffle member.

FIG. 3 is a block diagram showing how the opening area of a gas flow opening of a baffle member is adjusted in the semiconductor processing chamber of FIG. 1;

FIG. 4 is a schematic configuration diagram showing a second embodiment of a semiconductor processing chamber to which the present invention is applied.

FIG. 5 is a schematic configuration diagram showing a third embodiment of a semiconductor processing chamber to which the present invention is applied.

FIG. 6 is a block diagram showing a fourth embodiment of a semiconductor processing chamber to which the present invention is applied, showing how an opening area of a gas flow opening of a baffle member and a flow control valve are controlled.

7A and 7B show another embodiment of the baffle member, where FIG. 7A is a plan view, FIG. 7B is a plan view of a rotating baffle plate forming the baffle member, and FIG. 7C is a fixed side forming the baffle member. It is a top view of a baffle plate of.

FIG. 8 is a schematic configuration diagram of a conventional semiconductor processing chamber.

FIG. 9 is a plan view of a baffle plate of the semiconductor processing chamber of FIG. 8;

FIG. 10 is a block diagram showing how a throttle valve is controlled in a conventional semiconductor processing chamber.

[Explanation of symbols]

 26 Control means 31, 32, 41, 42 Baffle plate 31a, 32a Cutout of baffle plate 44 Baffle plate hole 46 Baffle plate fin 52 Baffle member 53 First chamber 54 Second chamber 58 Wafer 62 Gas exhaust means 63 Flow control valve 64 First pressure gauge 65 Second pressure gauge 71 Gas inlet 72 Gas flow opening 73 Flow meter

Claims (18)

[Claims] 1. A first chamber in which a gas inlet is provided and a wafer is disposed, a second chamber connected to gas exhaust means, and the first chamber and the second chamber are defined. A semiconductor processing chamber comprising a baffle member, at least one gas flow opening provided in the baffle member, and control means for adjusting an opening area of the gas flow opening. A first pressure gauge for measuring a pressure in the second chamber; and a second pressure gauge for measuring a pressure in the first chamber. 2. The semiconductor processing chamber according to claim 1, wherein an opening area of the gas flow opening is adjusted so that a difference between values measured by a second pressure gauge becomes a first target value. 3. The semiconductor processing chamber according to claim 2, wherein the first target value is a difference between values measured by the first and second pressure gauges when measured immediately after cleaning. . 4. A method according to claim 1, further comprising a flow meter for measuring a flow rate of the gas supplied from the gas inlet, wherein the gas discharging means sucks the gas so that the measured value of the flow meter becomes a second target value. The semiconductor processing chamber according to claim 1, wherein: 5. The semiconductor processing chamber according to claim 4, wherein said second target value is a value measured by said flow meter when measured immediately after cleaning. 6. A first pressure gauge for measuring a pressure in the second chamber, and a flow control valve disposed between the second chamber and a gas exhaust means, wherein the first pressure gauge is provided. 2. The flow control valve according to claim 1, wherein the flow rate of the gas sucked from the second chamber to the gas discharging means is controlled so that the measured value of the meter becomes a third target value.
A semiconductor processing chamber as described. 7. The baffle member has a plurality of baffle plates supported coaxially and rotatable relative to each other, and the baffle plate is provided with a notch serving as the gas flow opening. 7. The semiconductor processing chamber according to claim 1, wherein an opening area of the gas flow opening is changed by relative rotation of the openings. 8. The baffle member has two baffle plates supported coaxially and rotatable relative to each other, one of the baffle plates is provided with a hole serving as the gas flow opening, and the other baffle plate is provided. 7. A fin capable of closing the hole is provided in the fin, and the opening area of the gas flow opening is changed by relatively rotating these baffle plates. Semiconductor processing chamber. 9. The semiconductor processing chamber according to claim 1, wherein the semiconductor processing chamber is used for a chemical vapor deposition or a plasma etching operation. 10. A first chamber in which a gas inlet is provided and a wafer is disposed, a second chamber connected to gas exhaust means, and the first chamber and the second chamber are defined. A step of preparing a semiconductor processing chamber comprising a baffle member, at least one gas flow opening provided in the baffle member, and control means for adjusting an opening area of the gas flow opening; and A method for controlling a semiconductor processing chamber, comprising a step of adjusting an opening area of a flow opening. 11. The step of adjusting the opening area of the gas flow opening includes changing the opening area of the gas flow opening such that the pressure difference between the first and second chambers becomes a first target value. The method for controlling a semiconductor processing chamber according to claim 10, wherein the adjusting is performed. 12. The method according to claim 11, wherein the first target value is a pressure difference between the first and second chambers when measured in a state immediately after cleaning the semiconductor processing chamber. A method for controlling a semiconductor processing chamber. 13. A first chamber in which a gas inlet is provided and a wafer is disposed, a second chamber connected to gas exhaust means, and the first and second chambers are defined. A step of preparing a semiconductor processing chamber including a baffle member, at least one gas flow opening provided in the baffle member, and control means for adjusting an opening area of the gas flow opening; Controlling the suction force of the gas exhaust means so that the flow rate of the gas to be discharged becomes the second target value. 14. The method according to claim 13, wherein the second target value is a flow rate of the gas supplied from the gas inlet when measured in a state immediately after cleaning the semiconductor processing chamber. A method for controlling a semiconductor processing chamber. 15. A first chamber in which a gas inlet is provided and a wafer is disposed, a second chamber connected to gas discharge means, and the first and second chambers are defined. Preparing a semiconductor processing chamber including a baffle member, at least one gas flow opening provided in the baffle member, and control means for adjusting an opening area of the gas flow opening; Controlling the flow rate of the gas sucked from the second chamber to the gas discharge means so that the pressure of the gas reaches the third target value. 16. A baffle member having a plurality of baffle plates supported coaxially and rotatable relative to each other, wherein the baffle plate is provided with a cutout serving as the gas flow opening. 16. The method for controlling a semiconductor processing chamber according to claim 10, further comprising a step of changing an opening area of the gas flow opening by relatively rotating the baffle plate. 17. A coaxially supported and relatively rotatable 2
A baffle member having two baffle plates, one of which is provided with a hole serving as the gas flow opening, and the other of which is provided with a fin capable of closing the hole is provided. The method for controlling a semiconductor processing chamber according to claim 10, further comprising: a step of changing an opening area of the gas flow opening by relatively rotating the baffle plate. 17. 18. The method according to claim 10, wherein the method is used for a chemical vapor deposition or plasma etching operation.