JP2001192826A - Surface treatment system, surface treatment method, and surface treated article - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface treatment system capable of applying surface treatment by injecting ions by the plasma injection method even if the object of surface treatment is composed of an insulator. SOLUTION: The system is provided with an ion generation equipment 6 for generating ions and a pulse power source 8 for applying pulsative voltage to an insulator (material to be treated) 2. Ions generated by the ion generation equipment 6 are introduced into a vacuum chamber 3, where a plasma containing the ions to be injected is generated. By applying, within the plasma, the pulsative voltage containing positive pulse voltage and negative pulse voltage to the insulator from the pulse power source 8, the ions contained in the plasma are implanted into the insulator.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment apparatus and a surface treatment method for treating the surface of an insulator by implanting ions into the insulator, and a surface treated product obtained by the surface treatment method.

[0002]

2. Description of the Related Art In the field of optical recording devices such as optical disk devices, research and development for improving areal recording density have been actively conducted. In particular, in recent years, the light source wavelength is short (4
A blue-violet laser (about 10 nm) has been developed, and attempts have been made to improve the areal recording density by using this laser and increasing the numerical aperture (NA) of an objective lens provided in an optical pickup. . As described above, when the NA of the objective lens is increased, it is required to avoid an adverse effect on signal reproduction due to an increase in coma aberration, which is a kind of ray aberration.

By the way, a CD (Compact Dis
As a constituent material of a substrate of an optical disc represented by k) or MD (Mini Disk), an insulating material such as polycarbonate is used. In these CDs and MDs, it is necessary to reduce the thickness of the disk substrate (portion through which laser light passes) to about 0.1 mm in order to prevent the above-mentioned increase in coma aberration. However, when the disk substrate becomes thin, there is a problem that the disk substrate is easily scratched and an error occurs when reading and writing. In addition, the distance between the optical disc and the optical pickup is shortened with the improvement of the areal recording density, so that they may come into contact with each other. Thus, when the optical disk and the optical pickup come into contact with each other, the optical disk and the optical pickup may be damaged,
There is a problem that dust generated due to the damage adheres to an optical disk or an optical pickup, and an error occurs when reading or writing. Therefore, it is necessary to protect the surface of the optical disk and further the optical pickup.

In general, as a method of protecting the surface of a substance (object to be processed), a method of forming a protective film on the surface,
Surface treatment by injecting ions into the surface,
Techniques for improving various properties such as hardness, elastoplastic properties, electric conductivity, lubricity, durability, moisture resistance, corrosion resistance, wettability, and gas permeability are known.

[0005] As a method of implanting ions into an object to be processed, a method of directly irradiating an object with an ion beam to implant ions into the object to be processed (hereinafter referred to as an ion beam implantation method) is known. Have been. However, the ion beam implantation method has a problem that when the object to be processed has a three-dimensional structure, it is difficult to uniformly implant ions into the surface of the object to be processed.

In order to solve such a problem and to uniformly implant ions even when the object to be processed has a three-dimensional structure, plasma containing ions to be implanted is generated. A method has been devised in which a bias is applied to a substrate to accelerate ions contained in the plasma, and the ions are drawn into a workpiece and implanted (hereinafter, referred to as a plasma implantation method).

In the plasma implantation method, an object to be processed is arranged in a plasma containing ions to be implanted, and a negative pulse-like bias voltage as shown in FIG. 24 is applied to the object to be processed.
Then, when a negative voltage is applied to the object, ions in the plasma are drawn into the object and ions are implanted into the object.

In such a plasma implantation method, if plasma containing ions to be implanted is uniformly generated around the object to be processed, even if the object to be processed has a three-dimensional structure, Ions can be implanted uniformly on the surface of an object.

[0009]

However, conventionally,
The application of the plasma injection method has been limited to the case where the object to be processed is a conductor such as a metal. This is because, when an object to be processed is an insulator, if ions are implanted by a plasma implantation method, charges are immediately accumulated in the object to be processed, and a so-called charge-up state occurs, and ions are drawn into the object to be processed. Because it will be gone.

The present invention has been made in view of the above problems, and has as its object to be able to perform surface treatment by implanting ions by a plasma implantation method even if the object of surface treatment is an insulator. Another object of the present invention is to provide a surface treatment apparatus and a surface treatment method, and a surface-treated product obtained by the surface treatment method.

[0011]

A surface treatment apparatus according to the present invention is a surface treatment apparatus for treating the surface of an insulator by implanting ions into the insulator, and comprises a plasma containing ions implanted into the insulator. And a voltage applying means for applying a pulsed voltage to the insulator. The plasma generating means generates plasma containing ions to be injected into the insulator, and applies a voltage in the plasma. By applying a pulse-like voltage including a positive pulse voltage and a negative pulse voltage to the insulator by means, ions are implanted into the insulator.

A surface treatment method according to the present invention is a surface treatment method for treating the surface of an insulator by implanting ions into the insulator, wherein a positive pulse voltage and a negative pulse voltage are applied to a plasma containing ions to be implanted. By applying a pulse-like voltage including the above pulse voltage to the insulator, ions are implanted into the insulator.

The surface-treated product according to the present invention has a surface treated by injecting ions into a light-transmitting insulator in plasma.

In the surface treatment apparatus according to the present invention, when a pulse-like voltage including a positive pulse voltage and a negative pulse voltage is applied to the insulator by the voltage applying means, ions in the plasma generated by the plasma generating means are applied. Is uniformly injected into the insulator.

In the surface treatment method according to the present invention, ions in the plasma are implanted into the insulator in the plasma.

In the surface-treated material according to the present invention, ions are implanted into an insulator having a light transmitting property. Here, since ions are implanted in the plasma, the ions are uniformly implanted over the entire substrate.

[0017]

Embodiments of the present invention will be described below in detail with reference to the drawings.

[First Embodiment] FIG. 1 shows the configuration of a surface treatment apparatus according to a first embodiment of the present invention. The surface treatment apparatus 1 is for treating the surface of the object 2 by injecting ions into the object 2 made of an insulating material by a plasma implantation method.

Here, as a material of the workpiece 2 to be subjected to the surface treatment by ion implantation, for example, amorphous polyolefin (APO; Amorphous Polyolefin),
Polycarbonate (PC), polymethyl methacrylate (PMMA)
e), polyethylene terephthalate (PET; Polyethy)
lene terephthalate), acrylic resin, polyimide resin, carbon or glass. Also,
Examples of ion species to be implanted into the object 2 include carbon (C), nitrogen (N), tungsten (W), tantalum (Ta), chromium (Cr), molybdenum (Mo), cobalt (Co), and platinum. (Pt), nickel (Ni), iron (Fe), titanium (Ti), manganese (Mn), copper (C
u) or samarium (Sm).

The surface treatment apparatus 1 includes a vacuum vessel 3, a cryopump 4 for exhausting the inside of the vacuum vessel 3,
A holder 5 for supporting the workpiece 2 inside the vacuum vessel 3, an ion generator 6 for supplying ions to be implanted into the workpiece 2, a shutter 7 for switching on / off of ion supply, A pulse power supply circuit for applying a pulse voltage including a pulse voltage and a negative pulse voltage to the workpiece;

The vacuum vessel 3 is a vessel in which the inside is evacuated to a high vacuum state. In the surface treatment apparatus 1, a plasma containing ions to be implanted into the workpiece 2 is generated inside the vacuum vessel 3, and ions contained in the plasma are injected into the workpiece 2.

The cryopump 4 is a vacuum pump for evacuating the inside of the vacuum vessel 3 to obtain a high vacuum state. In the surface treatment apparatus 1, the inside of the vacuum vessel 3 is evacuated by the cryopump 4, and the degree of vacuum before introducing ions into the inside of the vacuum vessel 3, that is, the background vacuum degree is, for example, 1.33 × 10 ^-5 Pa (10 ⁻⁷ Torr) or so. Further, the inside of the vacuum vessel 3 is evacuated by the cryopump 4 and ions are introduced into the inside of the vacuum vessel 3 to generate plasma. .33 × 10 ⁻³ Pa (10 ⁻⁵⁾
Torr).

The holder 5 is for supporting the workpiece 2, and is supported inside the vacuum vessel 3 by an insulating support member 9 attached to the vacuum vessel 3.
When performing a surface treatment on the workpiece 2 made of an insulating material,
The workpiece 2 is attached to the holder 5.
Note that the support member 9 is attached to the vacuum vessel 3 via an insulator, for example.

A cooling water introduction pipe is incorporated in the holder 5, and the workpiece 2 attached to the holder 5 can be cooled by flowing cooling water through the pipe. The cooling water introduction pipe is led out of the vacuum vessel 3 via the support member 9. Therefore, as shown by arrow A in the figure, the cooling water can be circulated by the cooling water introduction pipe.

By using the holder 5 having the water cooling function as described above, it is possible to control the temperature of the processing target 2 even when the temperature of the processing target 2 rises when performing ion implantation on the processing target 2. Is possible. Therefore, even when the processing target 2 is made of a material that is not preferable to be processed at a high temperature, such as a plastic, the temperature increase of the processing target 2 can be suppressed and the ions can be implanted into the processing target 2.

The ion generator 6 is a plasma generating means for supplying ions to be implanted into the object 2 to generate plasma containing ions to be implanted into the object 2. Generation source 10 for generating methane
And a mass separator 11 for guiding only ions to be injected into the processing target 2 out of the particles generated from the ion generation source 10 to the inside of the vacuum vessel 3. In addition,
Although not shown, the vacuum vessel 3 and the ion generator 6
For example, it is configured to be adjacent via an insulator.

Here, as the ion source 10, for example, a Kauffman-type ion source, a magnetron sputter source, or a cathodic arc source can be used. Here, in the Kauffman-type ion source and the magnetron sputter source, an operating gas serving as an ion source is introduced, and ions are generated from the operating gas. Cathodic arc sources, on the other hand, generate ions without using a working gas. Specifically, in a cathodic arc source, an arc discharge is generated using a cathode made of a material serving as an ion source, and the arc discharge causes the cathode to evaporate and extract ionized particles. Since such a cathodic arc source does not use an operating gas for generating ions, it has the advantage that ions can be generated while maintaining a high vacuum state.

When a cathodic arc source is used as the ion source 10, the generation of droplets due to the melting of the cathode may be a problem. In order to solve such a problem of droplet generation, there is also one that removes droplets using an electromagnetic filter, and such a cathodic arc source is called a filtered cathodic arc source. . In this surface treatment apparatus 1, a filtered cathodic arc source may be used as the ion source 10.

From the ion source 10, neutral particles and macroparticles having a large mass are simultaneously generated together with desired ions. However, it is not preferable that particles other than the desired ions reach the object 2. Thus, the ion generator 6 is provided with the ion source 1
Of the particles from 0, only desired ions are introduced into the vacuum vessel 3 by the mass separator 11.

The mass separator 11 has, for example, a path bent at about 45 degrees, and a magnet is arranged along the path. In the mass separator 11, desired ions are guided into the inside of the vacuum vessel 3 along a curved path by a magnetic field from a magnet. On the other hand, neutral particles and macroparticles having a large mass are hardly restrained by the magnetic field, so that they cannot pass through the curved path and are blocked.

By arranging such a mass separator 11 between the ion source 10 and the vacuum vessel 3, neutral particles and macro particles having a large mass are blocked, and only desired ions are evacuated. It is possible to guide the inside of the container 3. Thereby, the influence of neutral particles and macroparticles having a large mass can be removed, and the quality of the surface treatment can be improved.

The shutter 7 is arranged in the vicinity of the ion exit of the ion generator 6, and switches on / off of ion supply. That is, when the shutter 7 is opened, the supply of ions from the ion generator 11 is performed, and when the shutter 7 is closed, the supply of ions from the ion generator 6 is stopped.

The pulse power supply circuit 8 is a voltage applying means for applying a pulse-like voltage including a positive pulse voltage and a negative pulse voltage to the workpiece 2 supported by the holder 5. That is, the pulse power supply circuit 8 applies a pulse-like voltage to the object 2 as a bias voltage when implanting ions into the object 2. When a negative pulse voltage is applied to the object 2, ions in the plasma are drawn into the object 2, and ions are implanted into the object 2.

The pulse power supply circuit 8 has a positive direct current (D
C: Direct Current) a first power supply 21 serving as a voltage source;
A second power supply 22 serving as a negative DC voltage source and a first power supply 2
A first inverter circuit 23 for converting a DC voltage from the first power supply 1 into a pulsed voltage, a second inverter circuit 24 for converting a DC voltage from the second power supply 22 into a pulsed voltage, first and second A pulse transformer 25 for increasing the pulse voltage from the inverter circuits 23 and 24, and a control circuit 26 for controlling the first and second inverter circuits 23 and 24
And a computer 27 for controlling the operation of the control circuit 26.

In this pulse power supply circuit 8, the first inverter circuit 23 converts the positive DC voltage from the first power supply 21 into a pulsed voltage, and the second inverter circuit 24 supplies the second power supply The negative DC voltage from 22 is converted to a pulsed voltage.

Outputs from these inverter circuits 23 and 24 are controlled by a control circuit 26 as a waveform control means. That is, the pulse power supply circuit 8 includes a first inverter circuit 23 that outputs a positive pulse-like voltage and a second inverter circuit 24 that outputs a negative pulse-like voltage, which operate in parallel with each other. Circuit 2
The control circuit 26 controls the positive and negative pulse-like voltages output from the inverter circuits 23 and 24 independently of their pulse peak value (pulse wave height), pulse rise time, pulse interval and pulse. It is possible to change the width and the like.

More specifically, for example, the control circuit 26
The output from the first inverter circuit 23 and the negative voltage pulse output from the second inverter circuit 24 are alternately output so that the positive voltage pulse output from the inverter circuit 23 and the negative voltage pulse output from the second inverter circuit 24 are alternately output. 2 and the output from the inverter circuit 24. Then, the pulse-shaped voltage controlled by the control circuit 26 and output from the first and second inverter circuits 23 and 24 is supplied to the primary winding of the pulse transformer 25.

The pulse voltage supplied to the pulse transformer 25 is boosted by the pulse transformer 25. Here, the terminal from the secondary winding of the pulse transformer 25 passes through the inside of the support member 9 supporting the holder 5 and is set on the workpiece support surface of the holder 5. Therefore, when the workpiece 2 is attached to the holder 5,
The pulse voltage boosted by the pulse transformer 25 is applied to the workpiece 2.

Here, the pulse-like voltage applied to the workpiece 2 includes a pulse obtained by boosting a positive voltage pulse output from the first inverter circuit 23 and a pulse output from the second inverter circuit 24. And a pulse obtained by boosting a negative voltage pulse. That is, the workpiece 2
, A pulse-like voltage including a positive pulse voltage and a negative pulse voltage is applied.

As described above, when the voltage to be applied to the object 2 is a pulse-like voltage including a positive pulse voltage and a negative pulse voltage, the ion This eliminates the possibility that charges accumulate on the object 2. That is, even if charges are accumulated on the processing target 2 by applying a negative pulse voltage, the charges are immediately neutralized by the positive pulse voltage. Similarly, even if charges accumulate on the workpiece 2 by applying a positive pulse voltage, the charges are immediately neutralized by the negative pulse voltage. Therefore, ions can be continuously implanted into the processing object 2 without causing a so-called charge-up state.

In the pulse power supply circuit 8, the pulse peak value, pulse rise time, pulse interval, pulse width, and the order of positive and negative pulses of the pulse voltage applied to the workpiece 2 are instructed to the computer 27. Variable by input. That is, when the pulse power supply circuit 8 is used, what kind of waveform of the pulsed voltage is applied to the workpiece 2 is input to the computer 27.
Based on this input, the computer 27 controls the control circuit 26
Control the operation of. The control circuit 26 includes a computer 27
The outputs from the first and second inverter circuits 23 and 24 are controlled so that a pulse-shaped voltage having a desired waveform is applied to the processing target 2 based on the instruction from.

Specifically, for example, the pulse peak voltage of the pulse voltage applied to the object 2 is
It can be changed independently for each of positive and negative up to about V to 40 kV. The pulse width is several μsec to several sec.
It is variable within the range of about. The pulse interval is several tens μs
Variable within a range of about ec to several seconds. Also, the order of the positive and negative pulses can be controlled by the computer 27 connected to the control circuit 26.

In this pulse power supply circuit 8, it is preferable to use a circuit configured using a semiconductor element for the inverter circuits 23 and 24. Since an inverter circuit using a semiconductor element is inexpensive, the pulse power supply circuit 8 can be configured at low cost by using a circuit using a semiconductor element as the inverter circuits 23 and 24 incorporated in the pulse power supply circuit 8. It is possible to do. Further, since a circuit formed using a semiconductor element is easily reduced in size, it is preferable to use a circuit formed using a semiconductor element as the inverter circuits 23 and 24 in order to reduce the size of the pulse power supply circuit 8.

When a circuit composed of semiconductor elements is used as the inverter circuits 23 and 24, it is difficult to obtain a high output voltage from the inverter circuits 23 and 24. As in the circuit 8, the output from the inverter circuits 23 and 24 may be boosted by the pulse transformer 25.

That is, when using a circuit constituted by using a semiconductor element as the inverter circuits 23 and 24,
For example, the pulse peak voltage of the pulse-like voltage output from the inverter circuits 23 and 24 is about several hundred V to several kV. This is boosted by the pulse transformer 25 to obtain a pulse voltage having a pulse peak voltage of about several tens kV. Then, the pulse voltage boosted by the pulse transformer 25 is applied to the workpiece 2.

Next, a method for treating the surface of the workpiece 2 using the surface treatment apparatus 1 having such a configuration will be described.

First, the workpiece 2 made of an insulating material to be subjected to surface treatment is mounted on a holder 5 disposed inside the vacuum vessel 3. Thereafter, the inside of the vacuum vessel 3 is evacuated by the cryopump 4 to a high vacuum state. The degree of vacuum inside the vacuum vessel 3 at this time, that is, the degree of vacuum before introducing ions into the vacuum vessel 3 (background vacuum degree) is as follows.
For example, the pressure is about 1.33 × 10 ⁻⁵ Pa (10 ⁻⁷ Torr).

When the object 2 is made of a material that is not preferable to be processed at a high temperature, such as plastic, for example, the cooling water is caused to flow through a cooling water introduction pipe incorporated in the holder 5 to be processed. The temperature of the processing object 2 is not excessively increased.

Next, ions to be implanted into the workpiece 2 are generated by the ion generator 6, and the ions are introduced into the vacuum chamber 3. As a result, a plasma containing ions to be implanted into the workpiece 2 is generated inside the vacuum vessel 3. The degree of vacuum inside the vacuum vessel 3 at this time, that is, the degree of vacuum when performing ion implantation, is, for example, 1.33 × 1
It is about 0 ^-3 Pa (10 ^-5 Torr).

Then, in a state where the object to be processed 2 is arranged in the plasma containing the ions to be implanted, the pulse power supply circuit 8 generates a pulse-like bias voltage including a positive pulse voltage and a negative pulse voltage, The pulse voltage is applied to the processing target 2. As a result, ions are drawn into the processing target 2, and ions are implanted into the processing target 2.
More specifically, when a negative pulse voltage is applied to the object 2, positive ions contained in the plasma are drawn into the object 2, and the positive ions are injected into the object 2. You.

As described above, when the positive ions are drawn into the object 2 and the ions are implanted into the object 2, the ions
Charge builds up. Therefore, if a negative voltage is continuously applied to the object 2, the ion implantation into the object 2 made of an insulator cannot be continued. Therefore, in the surface treatment apparatus 1, the bias voltage applied to the workpiece 2 is set to a pulse-like voltage including a positive pulse voltage and a negative pulse voltage, and the charges accumulated in the workpiece 2 are converted to a positive pulse voltage. Neutralize. More specifically, a positive pulse voltage is applied to the object 2
When applied to, the electrons are drawn into the processing object 2,
The charges accumulated in the object 2 are neutralized by the electrons. As described above, if the charges accumulated in the object 2 are neutralized, then, when a negative pulse voltage is applied, positive ions are drawn into the object 2 again, and Is implanted.

As described above, by setting the bias voltage applied to the object 2 to be a pulsed voltage including a positive pulse voltage and a negative pulse voltage, even if the object 2 is an insulator, The ions can be implanted into the object 2 without being charged up.

In the present embodiment, the amount, depth and profile of ions to be implanted into the workpiece 2 are determined by the pulse peak value of the negative pulse voltage applied to the workpiece 2, the pulse rise time, the pulse rise time, and the like. It depends on the interval or pulse width. Therefore, by controlling the waveform of the pulse-like voltage applied to the processing target 2, it is possible to control the implantation amount, the implantation depth, the implantation profile, and the like when implanting ions into the processing target 2.

FIG. 2 shows an implantation profile (depth from the surface of the workpiece 2 and the concentration of ions implanted into the workpiece 2) obtained when the ion implantation is performed by the plasma implantation method using the surface treatment apparatus 1. (Relationship with). As can be seen from this figure, in the plasma injection method,
By controlling the pulsed voltage applied to the processing target 2, it is possible to control the amount, depth, and profile of ions to be injected into the processing target 2. Therefore, it is possible to make the peak of the concentration of the ions to be implanted exist near the surface of the workpiece 2.

In addition, since the ion implantation here is performed by the plasma implantation method of implanting ions contained in the plasma into the object 2, the object 2 is three-dimensionally different from the ion beam implantation method. Even if it has a structure, it is possible to implant ions uniformly on the surface of the processing object 2.

FIG. 3 shows an example of an implantation profile obtained when performing ion implantation by the ion beam implantation method. In the case of the ion beam implantation method, since an ion beam having a constant energy is accelerated and implanted into an object, the implantation profile has a Gaussian-type distribution having a peak at a certain depth from the surface. .

Examples of the workpiece 2 to be subjected to the surface treatment by ion implantation as described above include, for example, a rotating drum used for recording / reproducing a magnetic tape by a helical scan method, a recording layer of a recording medium, and the like. A substrate that supports
A recording medium in which a recording layer is formed on a base material, a recording medium in which a recording layer (magnetic layer) made of, for example, a magnetic material is formed on a base material and a protective film is formed on the recording layer, Examples include a panel substrate for enclosing liquid crystal in a liquid crystal panel, a printed matter obtained by printing an insulator, and various types of micromachines made of an insulating material such as plastic.

FIG. 4 shows the appearance of a helical scan type magnetic recording / reproducing apparatus. The magnetic recording / reproducing apparatus is provided with the rotating drum 30 formed of, for example, plastic as described above. When recording / reproducing a magnetic tape by using the rotating drum 30, the magnetic tape 31 is wound around the rotating drum 30 and run as shown by an arrow B1 in FIG.
As shown by an arrow B2 in the middle, the rotating drum 3 is driven by a motor.
Rotate 0. Then, recording / reproduction of the magnetic tape 31 is performed by the magnetic head mounted on the rotating drum 30.

When the surface treatment is performed on the rotating drum by the surface treatment method according to the present embodiment, the surface hardness thereof can be greatly improved, and the plastic is hardly worn even by sliding with the magnetic tape. A rotating drum can be obtained. As a result, the weight of the motor that drives the rotary drum can be significantly reduced to, for example, about 1/10, as compared with the conventional rotary drum made of aluminum alloy. it can. Thus, by reducing the load on the motor, it is possible to greatly reduce the power required for driving the helical scan type magnetic recording / reproducing apparatus. Therefore, for example, it is possible to greatly increase the battery driving time. In addition, since less power is required, it is very preferable for the global environment.

When the rotating drum is made of plastic, there is a case where the magnetic tape sticks to the rotating drum due to the insulating property of the surface. In that case, when performing ion implantation,
Metal ions such as titanium are also introduced. This makes it possible to make the surface of the rotating drum conductive.
The problem of sticking of the magnetic tape can be solved.

More specifically, when methane gas (CH ₄ ) or the like is introduced into the ion source 10 to generate ions, Ti (CH ₃ ) ₂ Cl ₂ , tetramethylaminotitanium, An organic metal such as tetrakisdimethylaminotitanium (TDDMAT) or tetrakisdiethylaminotitanium (TDEAT) is introduced, and titanium ions are also supplied into the plasma. Thereby, the surface of the rotating drum can be made titanium, and the problem of sticking the magnetic tape can be solved.

The problem of sticking the magnetic tape can be solved by forming a conductive thin film on the surface of the rotating drum. However, when the conductive thin film is formed on plastic, the plastic and conductive Poor adhesion to thin film,
Poor durability of rotating drum. Therefore, in order to solve the problem of sticking the magnetic tape, as described above, metal ions such as titanium are also introduced at the time of ion implantation, so that the surface of the rotating drum has conductivity. Is preferred.

Further, when a thin film is formed on the rotating drum later, the surface processing accuracy changes depending on the film forming conditions of the thin film. On the other hand, in the case of ion implantation, ions are implanted along the surface of the rotating drum, so that the surface processing accuracy of the rotating drum hardly changes. For example, when the surface roughness after machining is 0.8S, the surface roughness after ion implantation is maintained at approximately 0.8S. Therefore, from the viewpoint of maintaining the surface processing accuracy, it is preferable to perform only the surface treatment by ion implantation.

When the object 2 is a disk-shaped recording medium having a magnetic layer formed on a base material, the waveform of the pulse-shaped voltage applied to the disk-shaped recording medium during ion implantation is controlled. It is preferable that more ions be implanted near the surface of the magnetic layer. This allows
The surface hardness of the magnetic layer can be significantly increased by mainly modifying the vicinity of the surface of the magnetic layer.

When the ion implantation is performed using the present invention, the ions are implanted into the object 2 by controlling the waveform of the pulsed voltage applied to the object 2 as will be described later in detail. In addition to injection, film formation can be performed simultaneously. Therefore, when performing the above-described surface treatment on the disk-shaped recording medium, the waveform of the pulse-shaped voltage applied to the disk-shaped recording medium is controlled, and simultaneously with the surface modification by ion implantation, a protective film for protecting the magnetic layer is formed. The formation and the like may be performed simultaneously.

When the object 2 is a disk-shaped recording medium having a magnetic layer and a protective film formed on a substrate, ions are implanted into the protective film to reduce the surface hardness of the protective film. By improving the durability, the durability and reliability of the disk-shaped recording medium can be improved. By increasing the surface hardness of the protective film of the disk-shaped recording medium in this way,
For example, it is also possible to use a disk-shaped recording medium, which was conventionally used in a caddy to prevent damage, without using the caddy.

When performing the surface treatment on the disk-shaped recording medium, the waveform of the pulsed voltage applied to the disk-shaped recording medium is controlled so that more ions are implanted near the surface of the protective film. Is preferable.
As a result, mainly the vicinity of the surface of the protective film can be modified, and the surface hardness of the protective film can be greatly increased.

Further, when the object to be processed 2 is a plastic panel substrate for enclosing liquid crystal in a liquid crystal panel, the surface treatment of the plastic panel substrate reduces the moisture permeability and oxygen permeability. It can be improved as much as a glass panel substrate, and can be a high quality plastic panel substrate. Therefore, a plastic panel substrate can be used, and the weight and cost of the liquid crystal panel can be reduced.

When the object to be processed 2 is a printed matter obtained by performing printing on an insulator, ions are implanted into the printed matter to modify the printed ink and perform printing. It can be hard to fall. Note that the ion implantation of the present embodiment is performed by the plasma implantation method, and therefore, unlike the ion beam implantation method, the ions can be uniformly implanted even if the processing target 2 has a three-dimensional structure. It is. Therefore, even when the printed matter has a three-dimensional structure, the entire surface of the printed matter can be uniformly ion-implanted, and the printed surface can be hardly dropped.

Next, the pulsed voltage applied to the workpiece 2 when ion implantation is performed by the surface treatment apparatus 1 will be described with reference to specific examples (FIGS. 5 to 12).

In the example shown in FIG. 5, first, a negative pulse voltage is applied, immediately after that, a positive pulse voltage having substantially the same absolute value of the pulse peak is applied, and thereafter, a period in which no voltage is applied is provided. ing. Then, such a pulse train is repeatedly applied to the workpiece 2.

In the case where the pulse voltage has a waveform as shown in FIG. 5, when a negative pulse voltage is applied, positive ions are accelerated and drawn into the workpiece 2. This allows
Ions are implanted into the workpiece 2. At this time, the positive ions are attracted to the object 2, so that charges are accumulated on the object 2. On the other hand, when a positive pulse voltage is applied, electrons are drawn into the workpiece 2. As a result, the charges accumulated on the object 2 are neutralized.

Therefore, by applying a pulse-like voltage having a waveform as shown in FIG. 5 to the object 2 as a bias voltage, even if the object 2 is an insulator, a charge-up state is achieved. In addition, the ion implantation into the workpiece 2 can be performed continuously.

The example shown in FIG. 6 is an example in which the order of positive and negative is reversed from the example shown in FIG. That is, first, a positive pulse voltage is applied, immediately after that, a negative pulse voltage having almost the same absolute value of the pulse peak is applied, and thereafter, a period in which no voltage is applied is provided. Then, such a pulse train is repeatedly applied to the workpiece 2.

When the pulse voltage has a waveform as shown in FIG. 6, similarly to the example shown in FIG. 5, when a negative pulse voltage is applied, positive ions are accelerated and Be drawn in. As a result, ions are implanted into the workpiece 2. At this time, the positive ions are attracted to the object 2, so that charges are accumulated on the object 2. on the other hand,
When a positive pulse voltage is applied, the electrons
Drawn into. As a result, the charges accumulated on the object 2 are neutralized.

Therefore, by applying a pulse-like voltage having a waveform as shown in FIG. 6 to the object 2 as a bias voltage, the object 2 can be treated similarly to the example shown in FIG.
Even if is an insulator, the ion implantation into the processing object 2 can be continuously performed without being in a charge-up state.

In the example shown in FIG. 7, after applying a negative pulse voltage, a period during which no voltage is applied is provided.
Subsequently, a period is provided in which a negative pulse voltage and a positive pulse voltage having substantially the same absolute value of the pulse peak are applied, and then no voltage is applied. Then, such a pulse train is repeatedly applied to the workpiece 2.

When the pulse-like voltage has a waveform as shown in FIG. 7, the charge-up state is obtained even if the processing target 2 is an insulator, as in the examples shown in FIGS. 5 and 6. In addition, the ion implantation into the workpiece 2 can be performed continuously.

In the example shown in FIG. 7, a period in which no voltage is applied is provided after the application of the negative pulse voltage, and the positive pulse voltage is applied after a certain period of time. As described above, in the case where a period in which no voltage is applied after the application of the negative pulse voltage is provided, the charges accumulated in the processing object 2 are drained to some extent during that period. Therefore, the charge is easily neutralized by applying a positive pulse voltage.

In the example shown in FIG. 8, first, a negative pulse voltage is applied, and immediately thereafter, a positive pulse voltage whose absolute value of the pulse peak is smaller than that of the negative pulse voltage is applied. A period during which no voltage is applied is provided. Then, such a pulse train is repeatedly applied to the workpiece 2.

In the case where the pulse-like voltage has a waveform as shown in FIG. 8, when the negative pulse voltage is applied, the ion As the injection is performed, charges accumulate on the object 2 and a positive pulse voltage is applied to neutralize the charges accumulated on the object 2.

In the example shown in FIG. 8, the absolute value of the pulse peak of the positive pulse voltage is smaller than the absolute value of the pulse peak of the negative pulse voltage. Even if the positive pulse is made small as in this example, the charge can be sufficiently neutralized. In particular, in the case where a period in which no voltage is applied between pulses is provided, charges accumulated in the object 2 are drained during that period, so that the charges accumulated in the object 2 are neutralized. May be smaller.

The example shown in FIG. 9 is an example in which the order of positive and negative is reversed from the example shown in FIG. That is, in the example shown in FIG. 8, first, a positive pulse voltage is applied, and immediately thereafter, a negative pulse voltage having a small absolute value of the pulse peak is applied,
Thereafter, a period in which no voltage is applied is provided. And
Such a pulse train is repeatedly applied to the processing target 2.
In this case as well, as in the examples shown in FIGS. 5 to 8, even if the electric charge accumulates on the processing target 2, it is neutralized.

In the example shown in FIG. 9, the absolute value of the pulse peak of the positive pulse voltage is larger than the absolute value of the pulse peak of the negative pulse voltage. The charge can be neutralized by increasing the positive pulse as in this example. In the case of this example, when a positive pulse voltage is applied,
Electrons more than neutralizing the accumulated charges are drawn into the object 2. Therefore, in the case of this example, the effect of the surface treatment by electron irradiation can also be obtained.

In the example shown in FIG. 10, first, a plurality of negative pulse voltages are applied. At this time, a pulse in which the negative voltage gradually increases is made continuous to form a waveform composed of a pulse train having a gentle negative slope as shown by a dotted line in the figure as a whole. Immediately after the application of the negative pulse voltage, a positive pulse voltage is applied, and thereafter, a period in which no voltage is applied is provided. Then, such a pulse train is repeatedly applied to the workpiece 2.

In the case where the pulse voltage has a waveform as shown in FIG. 10, when a plurality of negative pulse voltages are applied, positive ions are accelerated and drawn into the workpiece 2.
As a result, ions are implanted into the workpiece 2. At this time, the positive ions are attracted to the object 2, so that charges are accumulated on the object 2. On the other hand, when a positive pulse voltage is applied, electrons are drawn into the workpiece 2. As a result, the charges accumulated on the object 2 are neutralized.

As described in this example, the negative pulse voltage serving as the bias voltage for accelerating the positive ions and drawing them into the workpiece 2 is a combination of a plurality of pulses. It is possible to more finely control the implantation profile when implanting ions into the substrate.

In the examples shown in FIGS. 5 to 10, a period in which no voltage is applied is provided between the pulses. However, during the period in which no voltage is applied, the object 2 is applied with the initial energy. The arriving ions are directly processed
Deposits on top of Therefore, during a period in which no voltage is applied, film formation is performed on the object 2 instead of ion implantation into the object 2. That is, FIGS.
In the example shown in FIG. 2, both the effect of ion implantation and the effect of film formation are obtained.

On the other hand, if it is not desired to form a film on the object 2, a DC voltage component may be superimposed on the pulse voltage applied to the object 2. FIG. 11 shows an example of a pulse voltage in which a DC voltage component is superimposed. By superimposing a positive DC voltage component on the pulsed voltage as in this example,
Without forming a film between pulses,
Only ion implantation into the object 2 can be performed.

In the above description, it has been described that ions are implanted when a negative voltage is applied to the object 2. However, depending on conditions, when ions are applied to the object 2, a negative voltage is applied. In addition, ions may not enter the inside of the processing target 2 and may be in a sputtering state.

That is, when a sufficiently large negative voltage is applied to the object 2, the energy of the ions reaching the object 2 becomes sufficiently large, ions enter the inside of the object 2, and It is in the injection state,
When the negative voltage applied to the object 2 is small, the energy of the ions reaching the object 2 is small, so that the ions do not enter the inside of the object 2 and a sputtering state occurs.

More specifically, for example, when the object 2 is made of plastic and the ion species is carbon, when the negative voltage applied to the object 2 is about 10 kV, the ions are sufficiently accelerated and the ion implantation state is reduced. However, when the negative voltage applied to the object 2 is about several hundred volts, the acceleration of the ions is insufficient, and the ions do not enter the inside of the object 2 to be in a sputtering state.

When the surface treatment is performed on the object 2, such sputtering may be positively used. FIG. 12 shows an example of a pulsed voltage when sputtering is actively used. In the example shown in FIG. 12, when applying a negative pulse voltage, first,-several hundred V
By applying a certain degree of bias, the surface of the object 2 is sputtered. After that, a pulse of about −10 kV is applied, thereby ion-implanting the object to be processed 2.

As described above, by adjusting the voltage applied to the object 2, not only ion implantation into the object 2 but also sputtering of the object 2 can be performed. That is, by adjusting the voltage applied to the object 2, surface treatment combining sputtering and ion implantation can be performed on the object 2.

In the surface treatment apparatus 1, the ions to be implanted into the workpiece 2 can be intermittently supplied by pulsing the ion generator 11 or controlling the opening and closing operations of the shutter 7. . Therefore, the supply of ions to be implanted into the processing target 2 may be performed in synchronization with the pulse of the bias voltage applied to the processing target 2. Thereby, for example, only ion implantation is performed purely on the workpiece 2 or surface treatment is performed by combining ion implantation with film formation or sputtering under desired conditions. The surface treatment can be performed with finer control.

As described above, in this embodiment, when performing ion implantation by the plasma ion implantation method, a pulse-like voltage including a positive pulse voltage and a negative pulse voltage is applied to the workpiece 2.
Is applied, there is no possibility that even if the object to be processed 2 is an insulator, electric charges are accumulated inside the object 2 and a so-called charge-up state is caused. Further, since the ion implantation is performed by the plasma ion implantation method, unlike the ion beam implantation method, it is possible to implant ions evenly even if the processing target 2 has a three-dimensional structure. Therefore, various properties of the surface of the insulator such as hardness, elasto-plastic properties, electrical conductivity, lubricity, durability, moisture resistance, corrosion resistance, wettability, and gas permeability can be modified. Therefore, many parts conventionally made of a conductor can be made of an inexpensive material such as plastic.

[Second Embodiment] A second embodiment of the present invention relates to a method for treating a surface of an object to be processed made of an insulating material having optical transparency and a surface-treated object obtained by the method. is there. Here, a case where the object to be processed is an optical disk substrate will be described. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will not be repeated.

FIG. 13 is a flowchart showing a surface treatment method according to the present embodiment. In the present embodiment, first,
For example, a transparent substrate made of polycarbonate or amorphous polyolefin is prepared, and the transparent substrate is subjected to ultrasonic cleaning using, for example, alcohol (FIG. 13).
Step S1).

Next, a protective film is formed on the cleaned transparent substrate (Step S2). Specifically, first, a thermosetting silicone (for example, Tosgard 510 manufactured by Toshiba) is applied by, for example, a spin coating method (Step S2).
-1). Subsequently, for example, the silicone is dried in a drying oven in which the humidity is controlled to 40% or less (Step S2-2), and then the silicone is cured by heating at, for example, 80 ° C. for 3 hours (Step S2-). 3), a protective film formed by curing the silicone is formed. The object 2 having the protective film formed on the transparent substrate in this manner
Is prepared.

In this case, instead of the thermosetting silicone, an ultraviolet curable silicone (for example, TUV6020 manufactured by Toshiba) can be used.
In this case, for example, the silicone is cured by irradiating ultraviolet rays for 10 minutes under the conditions of an irradiation distance of 10 cm and an output of 80 W / cm using a high-pressure mercury lamp. In addition to the method of applying and curing silicone, as shown in FIG. 14, a CVD (Chemical Vapor Deposition) using a liquid or gaseous silicone material as a precursor is used.
position), a protective film can be formed (step S2a in FIG. 14).

Next, using the surface treatment apparatus 1 as shown in FIG. 1, the surface treatment of the object 2 is performed as follows (step 3). That is, first, for example, the workpiece 2 is attached to the holder 5 that is water-cooled with the cooling water supplied through the cooling water introduction pipe, and the inside of the vacuum vessel 3 is evacuated by the cryopump 4 to a high vacuum state. I do.
Subsequently, for example, carbon ions are generated from a Kauffman-type ion source 10 using a paraffin hydrocarbon such as methane gas (CH ₄ ) as an ion source, and the generated ions are introduced into the vacuum vessel 3. As a result, a plasma containing ions to be implanted into the workpiece 2 is generated inside the vacuum vessel 3. At this time, the degree of vacuum inside the vacuum container is, for example, 10 ⁻² to 10 ⁻⁶ Pa. Here, it is also useful to generate nitrogen ions and oxygen ions in addition to carbon ions. When generating nitrogen ions,
When N ₂ (nitrogen) or NH ₃ (ammonia) is used as an ion source to generate oxygen ions, for example, O ₂ (oxygen) or H ₂ O is used as an ion source. In addition,
Instead of the Kauffman-type ion source 10, an ion generator 6 having a cathodic arc source can be used as the ion source 10.

After the inside of the vacuum chamber 3 is made into a plasma atmosphere containing implanted ions, a pulse-like bias voltage is applied to the object 2 by, for example, a pulse power source for 1 to 20 minutes. As a result, ions such as carbon ions, nitrogen ions, and oxygen ions are drawn into the processing target 2, and the ions are implanted into the processing target 2. Note that, in the present embodiment, as in the first embodiment, the pulse power supply 8
It is preferable to apply a pulse-like voltage including a positive pulse voltage and a negative pulse voltage. The voltage is applied, for example, with a pulse width of about 5 μsec and a positive pulse voltage of 10 kV.
The negative pulse voltage is about -10 kV and the frequency is 1 to
This is performed under the condition of 100 kHz.

On the surface of the surface-treated product (workpiece 2) thus obtained, the chemical structure changes due to the ion implantation. As a result, the yield stress (yield point) is higher than that in which ions are not implanted, the hardness is high, and the wear resistance is excellent. Further, the adhesion between the transparent substrate and the protective film is also increased.

Further, the water vapor transmission rate and the oxygen transmission rate are extremely small, so that the water vapor and oxygen in the atmosphere can be prevented from being absorbed. Therefore, conventionally, in a plastic disk substrate, there has been a problem that the disk substrate absorbs water vapor and oxygen in the atmosphere, and the disk substrate is deformed by the influence thereof, but this problem can be solved. .

On the other hand, this surface-treated product has the same optical characteristics as those to which no ions have been implanted, despite the change in the chemical structure. For example, 380-90
In the wavelength region of 0 nm, it has a light transmittance substantially equal to the light transmittance of the ion-implanted region.

As described above, according to the surface treatment method according to the present embodiment, the object 2 having light transmittance (here,
By implanting ions into the optical disc substrate), the hardness, abrasion resistance and adhesion of the surface of the object to be processed can be improved as compared with those obtained without implanting ions. On the other hand, the optical properties of the obtained surface-treated product are kept equal to those obtained without ion implantation. Therefore, even when the thickness of the disk substrate is reduced, the disk is hardly damaged, and the life of the optical disk can be extended.

In the second embodiment, the case where the object 2 is an optical disk substrate in which a protective film is formed on a transparent substrate has been described. An optical disc provided with a recording layer having
An optical disk in which a protective film is further provided on the recording layer can be used as an object to be processed. When an optical disk is used as an object to be processed, the optical disk is hardly damaged even when foreign matter such as dust adheres to the surface thereof, and the life of the optical disk can be extended. Can be avoided, and the reliability of the optical disk can be improved. Further, the present invention can be similarly applied to a case where a surface treatment is performed on an object mainly containing silicon oxide such as glass.

[Third Embodiment] A third embodiment of the present invention relates to an objective lens as a surface-treated product and a surface treatment method thereof. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will not be repeated.

FIG. 15 shows a schematic configuration of an optical pickup using an objective lens as a surface-treated object according to the present embodiment. This optical pickup emits light from a laser diode (not shown),
The optical signal reflected at 3 is recorded on the optical disc 40 and
An objective lens 50 for guiding to a reproduction surface and made of an insulator having a light transmitting property is provided. Objective lens 5
0 is, for example, a transparent substrate 51 made of an acrylic resin;
And a surface protection layer 52 formed on the transparent substrate 51.

The surface protective layer 52 is formed, for example, by subjecting the transparent substrate 51 to a surface treatment using the surface treatment apparatus 1 as shown in FIG. Specifically, for example, a cathodic arc source is used as the ion source 10, desired ions such as carbon ions, oxygen ions, or nitrogen ions are generated from the ion source 10, and the generated ions are placed in a high vacuum state. Vacuum container 3
Of the transparent substrate 51 attached to the holder 5 and then applying a pulse-like voltage.

The surface protective layer 52 has a chemical structure similar to that of the protective film of the second embodiment, in which ions are not implanted (ie, the transparent substrate 51 is not ion-implanted). Are different. Therefore, it has a higher yield stress (yield point) than those in which ions are not implanted, has high hardness, and has excellent wear resistance. On the other hand, the surface protective layer 52 has optical characteristics equivalent to those in which ions are not implanted.

As described above, according to the objective lens and the surface treatment method according to the present embodiment, ions are implanted into the surface of the transparent substrate 51 because the surface protective layer 52 is formed by implanting the ions. The hardness and abrasion resistance of the surface of the objective lens can be improved as compared with those having no objective lens. Therefore, it is possible to prevent damage to the surface of the objective lens due to collision between the objective lens 50 and the optical disc 40, and to obtain an optical pickup having excellent durability.

[0113]

EXAMPLES Further, specific examples of the present invention will be described in detail. In each of the following examples, surface treatment was performed using the surface treatment apparatus 1 shown in FIG.

[Example 1] In this example, the object 2 was a plastic substrate obtained by molding amorphous polyolefin into a disk shape. The ion species to be implanted into the processing object 2 is carbon, and the ion source 10 includes Commonwealth Scientific (Commonwealth S).
cientific Corp.) was used.

Then, first, the plastic to be subjected to the surface treatment is processed.
Stick substrate placed inside vacuum container 3
5 and when ion implantation is performed,
Make sure that the temperature of the plastic substrate is not too high
The cooling water through the cooling water introduction pipe incorporated in the -5
Was. Then, the plastic substrate to be surface-treated
After attaching to the holder 5, the inside of the vacuum
The gas was evacuated by the opump 4 to a high vacuum state. At this time
Degree of vacuum inside the vacuum vessel 3, ie, the ion
The degree of vacuum before introduction into the vessel 3 (background vacuum degree) is approximately
1.33 × 10 ^-FivePa (10^-7Torr).

Next, carbon ions were generated by the ion generator 6, and the carbon ions were introduced into the vacuum vessel 3. Here, the ion current due to the carbon ion flow is about 10 A, and the energy of the carbon ions is about 25 A.
eV. Then, the carbon ions were introduced into the inside of the vacuum vessel 3 to generate plasma containing the carbon ions. The degree of vacuum inside the vacuum vessel 3 at this time, that is, the degree of vacuum when performing ion implantation,
It was about 1.33 × 10 ⁻³ Pa (10 ⁻⁵ Torr).

Then, in a state where the plastic substrate was placed in the plasma containing carbon ions, a pulse-like voltage was generated by the pulse power supply 8, and the pulse-like voltage was applied to the plastic substrate as a bias voltage.
As a result, carbon ions were drawn into the plastic substrate, and ions were implanted into the plastic substrate.

During the ion implantation as described above, it was observed that the plasma sheath was pale on the surface of the plastic substrate as the object to be processed 2.

In the present embodiment, the waveforms of the pulsed voltages applied to the plastic substrate were changed, and their comparisons were made. Specifically, first, as a first example, FIG.
As shown in (1), a pulsed voltage in which positive and negative pulses alternated was applied to the plastic substrate. Here, the positive and negative pulse peak values of the pulsed voltage were ± 10 kV, the width of each of the positive and negative pulses was 5 μsec, and the pulse interval was 0.1 msec (10 kHz). In addition, as a second example, as shown in FIG. 17, a pulse-like voltage consisting of only a negative pulse was applied to the plastic substrate. Here, the negative pulse peak value of the pulse voltage is −10 kV, the pulse width is 5 μsec, and the pulse interval is 0.1 m.
sec (10 kHz).

Then, the surface hardness of the plastic substrate on which the ion implantation was performed under these two conditions was measured. Here, the surface hardness was measured by an indentation hardness test using an NEC-made thin film hardness meter “MHA-400”.

FIG. 18 shows the measurement results when the pulsed voltage shown in FIG. 16 is applied to perform ion implantation, and the results obtained when the pulsed voltage shown in FIG. 17 is applied to perform ion implantation. FIG. 19 shows the measurement results. Note that FIG.
19 and FIG. 19, the abscissa indicates the indentation depth (unit: nm) of the indenter for indentation hardness test, and the ordinate indicates the magnitude of the indentation load (unit; μN) applied to the indenter for indentation hardness test. ing.

As can be seen from FIGS. 18 and 19, positive and negative pulses are alternated as compared with the case where a pulse-like voltage consisting of only negative pulses is applied to the plastic substrate to perform ion implantation (case of FIG. 19). When the ion implantation is performed by applying the pulse voltage appearing in (1) to the plastic substrate (in the case of FIG. 18), the amount of displacement when a load is applied is smaller, and the surface hardness is improved.

That is, by applying a pulse-like voltage in which positive and negative pulses alternately appear to the plastic substrate and performing ion implantation, a greater effect of modifying the surface of the plastic substrate can be obtained. This is because when a pulse-like voltage consisting of only a negative pulse is applied to a plastic substrate and ion implantation is performed, ion implantation is rarely performed due to charge-up, while positive and negative pulses alternate. This is because when the pulse-like voltage appearing in the above is applied to the plastic substrate to perform the ion implantation, the ion implantation is stably performed without a charge-up state.

[Example 2] In this example, an oil-based ink was applied on a plastic substrate obtained by molding an amorphous polyolefin into a disk shape, and this was used as a workpiece 2. Here, the film thickness of the oil-based ink applied on the plastic substrate was about 10 μm. Further, as in the first embodiment, the ion species to be implanted into the processing object 2 is carbon, and the ion source 1
For 0, a filtered cathodic arc source manufactured by Commonwealth Scientific was used.

First, the plastic substrate to which the oil-based ink has been applied is attached to the holder 5 disposed inside the vacuum vessel 3, and the temperature of the plastic substrate is not excessively increased when ion implantation is performed. The cooling water was supplied to a cooling water introduction pipe incorporated in the holder 5. After the plastic substrate coated with the oil-based ink was attached to the holder 5, the inside of the vacuum vessel 3 was evacuated by the cryopump 4 to a high vacuum state. The degree of vacuum inside the vacuum vessel 3 at this time, that is, the degree of vacuum before introducing ions into the inside of the vacuum vessel 3 (background vacuum degree)
Is about 2.79 × 10 ⁻⁵ Pa (2.1 × 10 ⁻⁷ Torr)
r).

Next, carbon ions were generated by the ion generator 6, and the carbon ions were introduced into the vacuum vessel 3. Here, the ion current due to the carbon ion flow is about 10 A, and the energy of the carbon ions is about 25 A.
eV. Then, the carbon ions were introduced into the inside of the vacuum vessel 3 to generate plasma containing the carbon ions. The degree of vacuum inside the vacuum vessel 3 at this time, that is, the degree of vacuum when performing ion implantation,
It was about 6.65 × 10 ⁻³ Pa (5 × 10 ⁻⁵ Torr).

In a state where the plastic substrate is arranged in the plasma containing carbon ions, the pulse power supply 8 generates a pulse-like voltage in which positive and negative pulses alternately appear, and the pulse-like voltage is used as a bias voltage to generate the plastic substrate. Was applied. As a result, carbon ions were drawn into the plastic substrate, and ions were implanted into the plastic substrate. Here, the pulse-like voltage applied to the plastic substrate has a positive / negative pulse peak value of ± 10 kV and a pulse width of 5 μm as in the first embodiment.
sec, and the pulse interval is 0.1 msec (10 kHz).
z).

During the ion implantation, it was observed that the plasma sheath was pale on the surface of the plastic substrate on which the oil-based ink was applied.

Then, before and after performing the surface treatment by ion implantation on the plastic substrate coated with the oil-based ink as described above, the attenuated total reflection method (ATR:
The infrared spectral characteristics were measured by attenuated total reflectance). For the measurement of the infrared spectral characteristics, an ATR measuring microscope “FTIRAIM8000” manufactured by Shimadzu Corporation was used.
Was used. FIG. 20 shows the measurement results of the infrared spectral characteristics. As shown in FIG. 20, by performing the surface treatment by the plasma ion implantation method, the surface characteristics of the plastic substrate coated with the oil-based ink are changed, and it can be seen that the surface modification is performed by the ion implantation. .

Before and after performing the surface treatment by ion implantation on the plastic substrate coated with the oil-based ink, a scratch test was performed using a surface evaluation device manufactured by Haydon. As a result, before the surface treatment was performed, the surface was damaged by a load of 0.01 g, but after the surface treatment, the surface was not damaged by the load of 1 g.

After performing the surface treatment by ion implantation as described above, the plastic substrate to which the oil-based ink was applied was put into a solvent such as acetone or ethanol, and was subjected to an ultrasonic cleaning machine for about one hour. It was confirmed that the oil-based ink was no longer dissolved. This indicates that the oil-based ink applied on the plastic substrate was modified so as to be insoluble in solvents such as acetone and ethanol by the surface treatment by ion implantation.

In the case where a surface treatment is performed on a substrate 2 made of a plastic substrate made of polycarbonate, polymethyl methacrylate, polyethylene terephthalate, acrylic resin, or the like, or a silicon substrate or a glass substrate coated with oily ink. The same result can be obtained for. Similar results can be obtained when an ultraviolet curable resin or a mixture of a magnetic powder and a binder is applied instead of applying the oil-based ink. Furthermore,
After forming the silicon oxide (SiO ₂₎ film or a silicon nitride (Si _x N _y) film by plasma CVD apparatus, for the case of performing ion implantation into these thin films, similar results are obtained.

Embodiment 3 In this embodiment, the rotating drum 30 shown in FIG. 4 was made of plastic, and the rotating drum 30 was used as the workpiece 2.

In this embodiment, first, the rotating drum 30 was made of plastic. And the ion source 10
In the same manner as in Example 2, except that methane gas was introduced at a flow rate of 50 sccm using an RF plasma source and ions of carbon, hydrogen, and hydrocarbon were generated from the methane gas, Was implanted with ions. During ion implantation, a pale white plasma sheath was observed on the surface of the rotating drum 30.

Next, in order to confirm that the hardness of the surface of the rotating drum 30 has been improved by performing ion implantation on the rotating drum 30 made of plastic, a plastic made of the same material as the rotating drum 30 is used. The surface hardness before and after performing ion implantation under the above-described conditions was measured using a thin film hardness tester “MHA-40” manufactured by NEC.
0 ". As a result, the surface hardness before ion implantation was 0.5 GPa, whereas the surface hardness after ion implantation was 20 GPa. This is sufficient hardness to make the rotating drum practical. That is, it has been confirmed that by applying the present invention, the problem of abrasion can be solved and a plastic rotating drum can be put to practical use.

Further, except that an organic metal gas containing titanium in addition to methane gas was introduced into the rotating drum 30 under the above-described conditions, a rotating drum was manufactured. Embedded in 10
A running test was performed over 00 hours. The running test device is a device that performs a running test by rotating the rotating drum and running the magnetic tape in the same manner as when recording / reproducing a magnetic tape by the helical scan method. The rewinding is automatically repeated so that the magnetic tape runs continuously.

As a result of the running test, no problem of abrasion of the rotating drum and no problem of sticking of the magnetic tape occurred.
It was confirmed that a life of 00 hours or more could be secured. From the results of the running test, by applying the present invention and applying a surface treatment, it is possible to solve the problem of abrasion and the problem of sticking of the magnetic tape on the plastic rotating drum. It turned out that the drum could be put to practical use.

[Embodiment 4] In this embodiment, a plastic disk substrate used for a disk-shaped recording medium such as an optical disk, a magneto-optical disk, or a magnetic disk is processed on a surface to be processed. It was thing 2.
That is, here, the insulator to be surface-treated is
It was used as a substrate supporting the recording layer of the recording medium. The ion species to be injected into the object 2 was carbon, and a filtered cathodic arc source manufactured by Commonwealth Scientific was used as the ion source 10.

First, the degree of vacuum before introducing ions into the vacuum vessel 3 is set to about 1.33 × 10 ⁻⁵ Pa (1
Except that the pressure was set to 0 ⁻⁷ Torr, ions were implanted into the surface of the processing object 2 in the same manner as in Example 2 except for using ^0-7 Torr. In addition,
The degree of vacuum at the time of performing ion implantation is about 1.33 × 10 ⁻³ P
a (10 ⁻⁵ Torr). During ion implantation, a pale white plasma sheath was observed on the surface of the rotating drum 30.

The moisture permeability and oxygen permeability of the disk substrate were measured before and after performing surface treatment by ion implantation on the disk substrate, respectively.

As a result, surface treatment by ion implantation was performed.
Before, the moisture permeability is 10g ・ m^-2・ 24h^-1And oxygen
The transmittance is 1 / 1.33 × 10^-14 cm^Two / S · Pa (1
× 10^-11 cm^Three ・ Cm / cm^Two ・ S ・ cmHg)
Was. On the other hand, surface treatment by ion implantation was performed.
After that, the moisture permeability is 0.007 gm^-2・ 24h^-1Tona
And the oxygen permeability is 3 / 1.33 × 10^-17 cm^Two / S ・
Pa (3 × 10^-14 cm ^Three ・ Cm / cm^Two ・ S ・ cmH
g). Thus, surface treatment by ion implantation
By carrying out, the moisture permeability and oxygen permeability of the disk substrate
Excess is very small.

[Embodiment 5] In this embodiment, a magnetic disk in which a magnetic layer is formed on a disk substrate is used as an object 2 to be surface-treated, and a protective film formed on the magnetic layer is used. Was subjected to ion implantation. That is, here, the insulator to be subjected to the surface treatment was a recording medium in which a recording layer was formed on a base material. The object 2
The ion species to be implanted into the ion source is carbon.
A filtered cathodic arc source manufactured by Commonwealth Scientific was used.

In this embodiment, first, a magnetic powder is mixed with a binder and applied on a plastic disk substrate.
A magnetic disk having a magnetic layer formed on a disk substrate was manufactured.

Then, the magnetic disk is placed in the vacuum container 3
The cooling water was supplied to a cooling water introduction pipe built in the holder 5 so that the temperature of the magnetic disk was not excessively increased when ion implantation was performed. After the magnetic disk to be subjected to the surface treatment was attached to the holder 5, the inside of the vacuum vessel 3 was evacuated by the cryopump 4 to a high vacuum state. At this time, the degree of vacuum inside the vacuum vessel 3, that is, the degree of vacuum before introducing ions into the vacuum vessel 3 (background vacuum degree) is about 1.33 × 10 ⁻⁵ Pa (10 ⁻⁷ Torr).
r).

Next, carbon ions were generated by the ion generator 6, and the carbon ions were introduced into the vacuum vessel 3. Here, the ion current due to the carbon ion flow is about 10 A, and the energy of the carbon ions is about 25 A.
eV. Then, the carbon ions were introduced into the inside of the vacuum vessel 3 to generate plasma containing the carbon ions. The degree of vacuum inside the vacuum vessel 3 at this time, that is, the degree of vacuum when performing ion implantation,
It was about 1.33 × 10 ⁻³ Pa (10 ⁻⁵ Torr).

When the magnetic disk is placed in the plasma containing carbon ions, the pulse power source 8
As a result, a pulse-like voltage including a positive pulse voltage and a negative pulse voltage was generated, and the pulse-like voltage was applied to the magnetic disk as a bias voltage. As a result, carbon ions were drawn into the magnetic disk, and ions were implanted into the magnetic layer of the magnetic disk.

During the ion implantation, it was observed that the plasma sheath was pale on the surface of the magnetic disk to be subjected to the surface treatment.

As described above, by implanting ions into the magnetic layer of the magnetic disk, the surface hardness of the magnetic layer was increased, and the durability and reliability of the magnetic disk could be improved.

[Embodiment 6] In this embodiment, an optical disc,
A protective film for protecting a recording layer in a disk-shaped recording medium such as a magneto-optical disk or a magnetic disk was used as a processing target 2 to be subjected to a surface treatment. That is, a recording medium having a recording layer formed on a base material and a protective film formed on the recording layer is subjected to surface treatment, and ion implantation is performed on the protective film formed on the recording layer. Was done.
The ion species to be implanted into the object 2 is carbon,
As the ion source 10, a filtered cathodic arc source manufactured by Commonwealth Scientific was used.

In this embodiment, first, a recording layer is formed on a plastic disk substrate, and then a protective film made of an ultraviolet curable resin is formed on the recording layer using a spin coater. A disk-shaped recording medium having a recording layer and a protective film laminated on a substrate was produced.

Then, ions were implanted into the surface of the disk-shaped recording medium in the same manner as in Example 5. During ion implantation, a pale blue plasma sheath was observed on the surface of the disk-shaped recording medium.

[Embodiment 7] In this embodiment, a panel substrate for enclosing liquid crystal in a liquid crystal panel was made of plastic, and the panel substrate was used as an object 2 to be subjected to surface treatment. The ion species to be injected into the object 2 was carbon, and a filtered cathodic arc source manufactured by Commonwealth Scientific was used as the ion source 10.

First, ions were implanted into the surface of the panel substrate in the same manner as in Example 5. During ion implantation, a pale white plasma sheath was observed on the surface of the panel substrate.

As described above, with respect to the panel substrate,
Before and after surface treatment by ion implantation
To measure the moisture permeability and oxygen permeability of the panel substrate.
Was. As a result, before performing surface treatment by ion implantation,
Moisture permeability is 10g ・ m^-2・ 24h ^-1And the oxygen permeability is
1 / 1.33 × 10^-14 cm^Two / S · Pa (1 × 10^-1
1 cm^Three ・ Cm / cm^Two ・ S ・ cmHg)
On the other hand, after surface treatment by ion implantation,
The degree is 0.007g ・ m^-2・ 24h^-1And oxygen permeability
Is 3 / 1.33 × 10^-17 cm^Two / S · Pa (3 × 10
^-14 cm^Three ・ Cm / cm^Two S · cmHg).
Thus, by performing the surface treatment by ion implantation,
The moisture permeability and oxygen permeability of the panel substrate are very small.
And the moisture permeability and acidity of the plastic panel substrate
Elemental transmittance similar to that of panel substrates made of glass
I was able to do it.

[Embodiment 8] In this embodiment, printing was performed on a plastic substrate, which was used as an object 2 to be subjected to surface treatment. That is, a printed material obtained by printing on an insulator was subjected to surface treatment, and ion implantation was performed on the printed surface. The ion species to be injected into the object 2 was carbon, and a filtered cathodic arc source manufactured by Commonwealth Scientific was used as the ion source 10.

In this embodiment, first, ions were implanted into the surface of the printed plastic substrate in the same manner as in the fifth embodiment. During the ion implantation, it was observed that the plasma sheath was pale on the surface of the plastic substrate to be subjected to the surface treatment.

Before and after performing the surface treatment by ion implantation on the printed plastic substrate, Haydon Type manufactured by Shinto Kagaku Co., Ltd. was used.
A scratch test was performed using an e22 type surface evaluation device. As a result, before the surface treatment, the printed surface was scratched with a load of about 0.01 g, but after the surface treatment, a load of 1 g was applied.
g.

After the surface treatment by ion implantation as described above, the plastic substrate was put into a solvent such as acetone or ethanol, and was subjected to an ultrasonic cleaning machine for about 1 hour. Was confirmed. This indicates that the ink printed on the plastic substrate was modified so as to be insoluble in solvents such as acetone and ethanol by the surface treatment by ion implantation.

Embodiment 9 In this embodiment, first, a transparent substrate made of polycarbonate was prepared, and this transparent substrate was subjected to ultrasonic cleaning using alcohol for 30 minutes. Next, silicone (Tosgard 510 made by Toshiba) was applied on the washed transparent substrate by a spin coating method.
Subsequently, the silicone was dried in a drying oven in which the humidity was controlled to 40% or less (drying time: 30 minutes), and then heated at 80 ° C. for 3 hours using an oven to cure the silicone. A protective film having a thickness of about 2 μm was formed thereon.

Next, the surface treatment of the workpiece 2 was performed using the surface treatment apparatus 1 as follows. That is, first,
The transparent substrate was attached to a holder cooled by water with cooling water supplied through a cooling water introduction pipe, and the inside of the vacuum vessel was evacuated by a cryopump to a high vacuum state.
Subsequently, carbon ions were generated from the ion source using methane gas as an ion source, and the carbon ions were introduced into the vacuum chamber. Thereby, inside the vacuum vessel,
A plasma containing carbon ions was generated. At this time, the degree of vacuum inside the vacuum vessel was about 5 × 10 ⁻³ Pa.

After setting the inside of the vacuum vessel to a plasma atmosphere containing carbon ions, a pulse-like voltage was applied to the transparent substrate on which the protective film was formed for three minutes by a pulse power supply, in which positive and negative pulses alternately appeared. At this time, the positive and negative pulse peak values of the pulsed voltage are ± 10 kV, the width of each of the positive and negative pulses is 5 μsec, and the pulse interval is 0.1 m.
sec (10 kHz). As a result, carbon ions were drawn into the protective film and implanted.

Further, the surface treatment of the transparent substrate was carried out under the above-mentioned conditions except that nitrogen ions were generated from the ion source using N ₂ or NH ₃ as an ion source.

As Comparative Example 1 for this embodiment,
The surface treatment was performed in the same manner as in this example except that ions were implanted into the transparent substrate without forming the protective film.
As Comparative Example 2 for this example, a protective film made of DLC (Diamond Like Carbon) was formed on quartz glass, and the light transmittance described later was measured.

Thereafter, in order to examine the characteristics of the obtained surface-treated product, the surface-treated product before and after the surface treatment of this example (the surface-treated product) and the surface-treated product of Comparative Example 1 were examined. As described in detail below, measurement of light transmittance, measurement of infrared absorption spectrum, and scratch test were performed.

The light transmittance was measured using a spectrophotometer (Lambda19 manufactured by PERKIN ELMER). FIG. 21 shows the obtained results.
Shown in In FIG. 21, the vertical axis represents the light transmittance (unit;
%), And the horizontal axis shows the wavelength of light (unit: nm). Data A shows the light transmittance of the sample before surface treatment of the present example, data B shows the light transmittance of the sample after surface treatment with carbon ions of the present example, and data C shows the surface transmittance of comparative example 1. Shows the light transmittance of the object, and data D is Comparative Example 2.
Is shown. As can be seen from FIG.
The light transmittance before and after the surface treatment of the present example hardly changed, and both had a light transmittance of 80% or more in the visible light region (wavelength 380 to 900 nm). . Therefore, it was confirmed that the surface-treated product of this example can be applied to an optical disk substrate used for an optical disk device having a blue-violet laser.

The measurement of the infrared absorption spectrum was performed by the attenuated total reflection method in the same manner as in Example 2. Here, the measurement depth was around 0.5 to 2.5 μm. FIG. 22 shows the obtained result. In FIG. 22, the vertical axis indicates the infrared absorption spectrum (arbitrary unit), and the horizontal axis indicates the wave number (unit: cm).
^-1 ). Data A shows the spectrum before the surface treatment of the present embodiment, data B shows the spectrum after the surface treatment with carbon ions of the present embodiment, and data E shows the spectrum after the surface treatment with nitrogen ions of the present embodiment. Shows the spectrum of In the data A, the data B, and the data E, a change was observed in the infrared absorption intensity in the region of the wave number indicated by the arrow in FIG. For example, before ion implantation (data A), 1100c
The shoulder accompanying the largest peak around m ^-1 (FIG. 22)
Sign S) can be seen, but by implanting ions,
This shoulder has disappeared. This indicates that as a result of the ion implantation, the chemical structure has changed near the surface of the protective film.

The scratch test was performed using a scratch test device (Tribogear (HEIDON-22) manufactured by Shinto Kagaku Co., Ltd.). Specifically, the load is set to 0 to 0.49 N (0 to 5 N).
0 g weight), while changing the surface of the sample to 1 with a probe.
When scratching at a speed of 0 mm / min (scratch distance 10 m
m) was measured (continuous load mode). The probe used was a normal probe made of alumina (Al ₂ O ₃ ), having a tip radius of 0.05 mm and a tip angle of 60 °. FIG. 23 shows the obtained result. 23, the vertical axis represents the frictional force (unit: N), and the horizontal axis represents the load (unit: N), and data A represents the frictional force before the surface treatment in this embodiment. And data B show the frictional force after the surface treatment with carbon ions in the present example, where the yield point was 0.23 N (23 g weight) before the surface treatment, It was found that the protective film was destroyed.
The yield point of the surface-treated product was 0.33 N (34 g weight). That is, it was confirmed that the ion implantation improves the hardness and wear resistance of the protective film and the adhesion between the protective film and the transparent substrate.

From the above results, when the ion implantation into the protective film is performed by the surface treatment method of the present embodiment, the obtained surface treated product has a higher hardness and a higher resistance than before the surface treatment. It turned out that it was excellent in abrasion property. It was also found that the light transmittance of the surface-treated product was almost unchanged from that before surface treatment.

[Embodiment 10] In this embodiment, first, a transparent substrate 51 made of an acrylic resin was prepared, and a surface treatment apparatus 1 was prepared.
In the same manner as in Example 9, carbon ions were implanted into the surface of the transparent substrate 51 to form a surface protective layer 52. Thus, the objective lens 50 was manufactured.

After that, the obtained objective lens 50 was pushed in from the surface protective layer 52 side by a Berkovich indenter having a tip radius of 0.5 μm using a thin film hardness tester.
Pressing down to 00 nm and further measuring up to a load of 290 μN showed no indentation on the surface protective layer 52, indicating that there was little deformation compared to the strain displacement curve. This indicates that there is no plastic deformation of the protective film 52 due to stress and that the yield point is large, which suggests that such a surface treatment is effective.

[Fourth Embodiment] In a fourth embodiment of the present invention, as a modification of the surface treatment apparatus used in the first embodiment, an inverter circuit is configured using a vacuum tube. . When a vacuum tube is used as the inverter circuit, the pulse-like voltage output from the inverter circuit can be directly applied to the object without passing through a pulse transformer as in the first embodiment. In addition, when the vacuum tube method is employed, it is possible to measure a current waveform that cannot be measured due to resonance in the pulse transformer method. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will not be repeated.

In the present embodiment, 5
Only ions are irradiated from the Kauffman-type ion source 10 having a cm grid toward the substrate holder 5 and the substrate 2 having a diameter of, for example, 150 mm at, for example, 200 V and 1 mA.
The inside of the vacuum chamber 3 is evacuated to, for example, 10 ⁻⁴ Pa by a vacuum pump (not shown). At the time of operation of the ion source 10, the methane gas is decomposed by the filament into carbon and hydrogen ions. It becomes 10 ^-2 Pa. The substrate holder 5 is insulated from the vacuum chamber 3 by an insulator, and is cooled by a refrigerant liquid nitrogen. A high voltage pulse is applied to the substrate holder 5 from a pulse power supply circuit 60.

The pulse power supply circuit 60 includes a high-voltage vacuum tube 6 for outputting positive and negative pulse voltages with the coil 63 interposed therebetween.
1, 62 are provided. These high voltage vacuum tubes 61, 62
Are connected to chargers 66 and 67 via controllers 64 and 65, respectively. One charger 66 outputs a positive DC voltage, and the other charger 67 outputs a negative DC voltage. The timing signals are supplied from the timing signal generator 68 to the controllers 64 and 65, whereby the chargers 66 and 65 are controlled.
The on / off control of the positive / negative DC voltage output from 67 is performed to convert the DC voltage into a positive / negative pulse-like voltage, and the controller 64 outputs a positive pulse-like voltage and a negative pulse-like voltage alternately. , 65 are controlled.

That is, in the pulse power supply circuit 60,
The positive and negative DC voltages output from the chargers 66 and 67 are turned on / off based on the timing signal supplied from the timing signal generator 68 and converted into pulsed voltages. Amplified. As a result, positive and negative pulse-like voltages are alternately output and applied to the workpiece 2 via the support member 9 and the substrate holder 5. Other operations are the same as those of the first embodiment.

FIGS. 25 to 30 show specific examples of voltage waveforms output from the pulse power supply circuit 60, respectively. FIGS.
Represents a current waveform when the voltage waveforms shown in FIGS. 25 to 30 are applied. The voltage can be measured by a high voltage probe manufactured by Tektronix, and the current can be measured by a CT probe manufactured by Pearson. In FIG. 25, T
d1 indicates that the rise time of the negative pulse is 2 μsec. Tn indicates that the pulse width including the rising and falling edges is 10 μsec, Tp indicates that the positive pulse width is 5 μsec, and Tc indicates that the period is 1 msec. The current waveform at this time is shown in FIG.
As shown in (2), the pulse current is constantly measured at about 0.2 A.

In FIG. 26, the fall time T of the negative pulse
b indicates 100 μsec. The current waveform at this time is as shown in FIG. FIG. 27 shows that the fall time Td2 of the positive pulse is 2 μsec as in the case of the negative pulse. The current waveform at this time is as shown in FIG. FIG. 28 and FIG. 29
And FIG. 30 correspond to FIGS. 25, 26 and 27, respectively.
Is a waveform when the positive and negative polarities are inverted. The values of the pulse widths Tp and Tn are each 1 μsec.
It is preferable to be in the range of c to 1000 μsec.
The specific values of the positive and negative voltages in the figure are, for example, + V
Is 10 KV and -V is -20 KV. Note that + V is 0
KV to 200 KV and -V are preferably in the range of 0 to -200 KV.

In this embodiment, since a vacuum tube is used instead of a transformer as the pulse power supply circuit 60, a high output voltage can be obtained, and positive and negative pulse widths can be controlled. Therefore, a voltage having an appropriate pulse width can be applied according to the type of the object to be processed, and the surface treatment by ion implantation can be performed more appropriately. Other functions and effects are the same as those of the first embodiment.

As described above, the present invention has been described with reference to some embodiments and examples. However, the present invention is not limited to the above embodiments and examples, and can be variously modified. For example, in the third embodiment, ions are implanted into the surface of the transparent substrate 51 to form the surface protective layer 52. However, similarly to the second embodiment, the surface protection layer 52 is formed on the transparent substrate in advance. Ions may be implanted into the formed protective film.

In the second embodiment, an optical disk substrate is taken as an example of the object 2 to be processed, and
In the above embodiments, the objective lens 50 constituting an optical pickup has been described as an example of the object 2 to be processed, but the present invention can be widely applied to other objects having optical transparency such as a magneto-optical disk. can do.

[0180]

As described above in detail, according to the surface treatment apparatus according to claim 1 or 2, or the surface treatment method according to any one of claims 3 to 16, plasma By applying a pulse-like voltage including a positive pulse voltage and a negative pulse voltage in the above, ions are implanted into an object to be processed mainly containing an insulator or silicon oxide. In addition, there is no possibility that charges are accumulated inside the object to be processed containing an insulator or silicon oxide as a main component, so that a so-called charge-up state is eliminated, and an effect is obtained that ions are uniformly implanted into the surface. In particular, surface treatment by ion implantation can be performed on plastics, which are insulators. That is, according to the surface treatment apparatus or the surface treatment method of the present invention, plastics are subjected to surface modification by ion implantation to obtain hardness, elastoplastic properties, electrical conductivity, lubricity, durability, moisture resistance, and corrosion resistance. It is possible to modify various properties such as wettability and gas permeability. Therefore, many parts conventionally made of metal, glass, and the like can be replaced with inexpensive plastic, which is extremely effective in industry.

According to the surface treatment method of the present invention, the surface treatment of an insulator having a light-transmitting property is achieved. Is configured so that
This has the effect of obtaining a surface-treated product whose optical properties are almost the same as those without ions implanted and whose surface mechanical properties are better than those without ions implanted.

In particular, according to the surface-treated product according to the twentieth aspect, since the surface of the optical recording medium or the base material used for the optical recording medium is treated, the case where the thickness is small or the surface Even when foreign matter such as adheres, the optical recording medium is hardly damaged, and the life of the optical recording medium can be extended. Further, it is possible to avoid occurrence of an error when reading and writing an optical signal, and it is possible to improve the reliability of the optical recording medium.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a configuration of a surface treatment apparatus according to a first embodiment of the present invention.

FIG. 2 is a characteristic diagram showing an implantation profile when ion implantation is performed by a surface treatment method (plasma implantation method) according to the first embodiment of the present invention.

FIG. 3 is a characteristic diagram illustrating an implantation profile when ion implantation is performed by an ion beam implantation method.

FIG. 4 is a perspective view illustrating an appearance of a rotary drum that performs a surface treatment by a surface treatment method according to the first embodiment of the present invention.

FIG. 5 is a diagram illustrating an example of a waveform of a pulsed voltage applied when performing a surface treatment by the surface treatment method according to the first embodiment of the present invention.

FIG. 6 is a diagram illustrating another example of the waveform of the pulsed voltage applied when performing the surface treatment by the surface treatment method according to the first embodiment of the present invention.

FIG. 7 is a diagram illustrating still another example of the waveform of the pulsed voltage applied when performing the surface treatment by the surface treatment method according to the first embodiment of the present invention.

FIG. 8 is a diagram illustrating still another example of the waveform of the pulsed voltage applied when performing the surface treatment by the surface treatment method according to the first embodiment of the present invention.

FIG. 9 is a diagram showing still another example of the waveform of the pulsed voltage applied when performing the surface treatment by the surface treatment method according to the first embodiment of the present invention.

FIG. 10 is a diagram illustrating yet another example of the waveform of the pulsed voltage applied when performing the surface treatment by the surface treatment method according to the first embodiment of the present invention.

FIG. 11 is a diagram illustrating still another example of the waveform of the pulsed voltage applied when performing the surface treatment by the surface treatment method according to the first embodiment of the present invention.

FIG. 12 is a diagram illustrating still another example of the waveform of the pulsed voltage applied when performing the surface treatment by the surface treatment method according to the first embodiment of the present invention.

FIG. 13 is a flowchart illustrating a surface treatment method according to a second embodiment of the present invention.

FIG. 14 is a flowchart illustrating another surface treatment method according to the second embodiment of the present invention.

FIG. 15 is a cross-sectional view illustrating a configuration of an optical pickup including an objective lens as a surface-treated object according to a third embodiment of the present invention.

FIG. 16 is a diagram illustrating a first example of a pulsed voltage applied to a plastic substrate in the first embodiment of the present invention.

FIG. 17 is a diagram showing a second example of the pulsed voltage applied to the plastic substrate in the first embodiment of the present invention.

18 is a characteristic diagram illustrating a result of an indentation hardness test when ion implantation is performed by applying the pulsed voltage illustrated in FIG.

19 is a characteristic diagram illustrating a result of an indentation hardness test when the pulsed voltage illustrated in FIG. 17 is applied to perform ion implantation.

FIG. 20 is a characteristic diagram illustrating measurement results of an infrared absorption spectrum according to Example 2 of the present invention.

FIG. 21 is a characteristic diagram illustrating a relationship between light transmittance and wavelength according to Embodiment 9 of the present invention.

FIG. 22 is a characteristic diagram illustrating a measurement result of an infrared absorption spectrum according to Example 9 of the present invention.

FIG. 23 is a characteristic diagram illustrating a result of a scratch test according to Example 9 of the present invention.

FIG. 24 is a diagram illustrating a configuration of a surface treatment apparatus according to a fourth embodiment of the present invention.

FIG. 25 is a diagram illustrating an example of a waveform of a pulsed voltage applied in the fourth embodiment of the present invention.

FIG. 26 is a diagram illustrating another example of the waveform of the pulsed voltage applied in the fourth embodiment of the present invention.

FIG. 27 is a diagram illustrating still another example of the waveform of the pulsed voltage applied in the fourth embodiment of the present invention.

FIG. 28 is a diagram illustrating still another example of the waveform of the pulsed voltage applied in the fourth embodiment of the present invention.

FIG. 29 is a diagram illustrating still another example of the waveform of the pulsed voltage applied in the fourth embodiment of the present invention.

FIG. 30 is a diagram illustrating still another example of the waveform of the pulsed voltage applied in the fourth embodiment of the present invention.

FIG. 31 is a diagram showing a current waveform when the voltage shown in FIG. 25 is applied.

FIG. 32 is a diagram showing a current waveform when the voltage shown in FIG. 26 is applied.

FIG. 33 is a diagram showing a current waveform when the voltage shown in FIG. 27 is applied.

FIG. 34 is a diagram illustrating a current waveform when the voltage illustrated in FIG. 28 is applied.

35 is a diagram showing a current waveform when the voltage shown in FIG. 29 is applied.

FIG. 36 is a diagram showing a current waveform when the voltage shown in FIG. 30 is applied.

FIG. 37 is a diagram showing a waveform of a pulse bias voltage applied to an object to be processed in a conventional plasma injection method.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Surface treatment apparatus, 2 ... Workpiece, 3 ... Vacuum container, 4 ...
Cryopump, 5 ... Holder, 6 ... Ion generator,
7 shutter, 8 pulse power supply circuit

Continued on the front page (51) Int.Cl. ⁷ Identification FI FI Theme Court II (Reference) G11B 7/26 G11B 7/26 5D121 11/105 521 11/105 521D 531 531E 546 546E 546G (72) Inventor Mitsunori Ueda Tokyo 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation (72) Inventor Hiroyuki Okita 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation (72) Inventor Tomoji Takegasa Shinagawa, Tokyo 6-7-35 Kita-Shinagawa-ku Sony Corporation F-term (reference) 4K029 AA11 AA24 AA27 BA34 BD12 CA10 DE04 GA02 5D029 KB11 LB20 LC21 5D075 EE03 FG04 FG11 GG16 GG20 5D112 AA02 AA05 AA01 BA27 FB21 FB21 JA64 NA05 5D121 AA02 AA04 EE04 EE19

Claims (23)

[Claims] 1. A surface treatment apparatus for treating a surface of an insulator by implanting ions into the insulator, comprising: a plasma generating means for generating plasma containing ions to be implanted into the insulator; Voltage applying means for applying a pulsed voltage, wherein the plasma generating means generates plasma containing ions to be injected into an insulator, and the voltage applying means generates a positive pulse voltage and a negative pulse voltage in the plasma. A surface treatment apparatus characterized in that ions are implanted into an insulator by applying a pulse voltage including the following to an insulator. 2. The surface treatment apparatus according to claim 1, wherein said voltage applying means has a waveform control means for controlling a waveform of a pulsed voltage applied to the insulator. 3. A surface treatment method for treating a surface of an insulator by implanting ions into the insulator, comprising: a pulse including a positive pulse voltage and a negative pulse voltage in a plasma containing the ions to be implanted. A surface treatment method comprising applying ions to an insulator by applying a state voltage to the insulator. 4. The surface treatment method according to claim 3, wherein a period during which no voltage is applied is provided between the voltage pulses when the pulse-like voltage is applied to the insulator. 5. When applying a pulse voltage to an insulator,
The surface treatment method according to claim 3, wherein a DC voltage component is superimposed on the pulse voltage. 6. A pulse-shaped voltage applied to an insulator is formed by combining a plurality of pulses different in at least one of a pulse peak value, a pulse rise time, a pulse interval, and a pulse width. The surface treatment method according to claim 3, wherein: 7. A method for controlling at least one of an implantation amount, an implantation depth, and an implantation profile when implanting ions into an insulator by controlling a waveform of a pulsed voltage applied to the insulator. 4. The method according to claim 3, wherein
The surface treatment method described. 8. The surface treatment method according to claim 3, wherein the insulator to be subjected to the surface treatment is a rotary drum used for at least one of recording and reproduction of a magnetic tape by a helical scan method. 9. The surface treatment method according to claim 3, wherein the insulator to be subjected to the surface treatment is a substrate that supports a recording layer of a recording medium. 10. The surface treatment method according to claim 3, wherein the insulator to be subjected to the surface treatment is a recording medium in which a recording layer is formed on a base material. 11. An insulating material to be subjected to a surface treatment is a recording medium in which a recording layer is formed on a base material and a protective film is formed on the recording layer. The surface treatment method according to claim 3, wherein ions are implanted into the protective film to perform a surface treatment. 12. The surface treatment method according to claim 3, wherein the insulator to be surface-treated is a panel substrate for enclosing liquid crystal in a liquid crystal panel. 13. The surface treatment method according to claim 3, wherein the insulator to be subjected to the surface treatment is a printed matter obtained by printing the insulator. 14. The surface treatment method according to claim 3, wherein the insulator to be subjected to the surface treatment has a light transmitting property. 15. The surface treatment method according to claim 14, wherein the insulator includes a substrate and a protective film provided on the substrate and constituting a surface of the insulator. 16. A surface treatment method for treating a surface of an object to be processed by injecting ions into an object mainly composed of silicon oxide, wherein a positive pulse voltage is applied to the plasma containing the ions to be implanted. A surface treatment method characterized in that ions are implanted into an object by applying a pulse-like voltage including a pulse voltage and a negative pulse voltage to an insulator. 17. A surface-treated material characterized in that a surface thereof is treated by implanting ions in plasma into an insulator having a light-transmitting property. 18. The surface-treated product according to claim 17, wherein the insulator has substantially the same light transmittance in a predetermined wavelength region regardless of whether or not ion implantation is performed. 19. The light transmittance of the insulator is substantially equal in a part of a region within a range from 380 nm to 900 nm irrespective of the presence or absence of ion implantation. The surface-treated product described. 20. The surface-treated product according to claim 17, wherein the insulator is used as an optical recording medium having at least a substrate and a recording layer or a substrate of the optical recording medium. 21. The surface-treated product according to claim 17, wherein the yield stress on the surface of the insulator is increased by ion implantation. 22. The surface-treated product according to claim 17, wherein the hardness of the surface of the insulator is increased by ion implantation. 23. The insulator, comprising: a substrate; and a protective film provided on the substrate and forming a surface of the insulator, wherein the adhesion between the substrate and the protective film is reduced by ion implantation. 2. The method according to claim 1, wherein
7. The surface-treated product according to 7.