JP2001177142A5 - - Google Patents
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- JP2001177142A5 JP2001177142A5 JP1999357772A JP35777299A JP2001177142A5 JP 2001177142 A5 JP2001177142 A5 JP 2001177142A5 JP 1999357772 A JP1999357772 A JP 1999357772A JP 35777299 A JP35777299 A JP 35777299A JP 2001177142 A5 JP2001177142 A5 JP 2001177142A5
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- receiving element
- protective layer
- layer
- contact layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000010410 layer Substances 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 230000000875 corresponding Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Description
また、本発明の受光素子は、コンタクト層上に成長されたキャップ層と同じ材料からなる保護層を更に備え、高濃度不純物領域がコンタクト層から保護層に連続するように形成されていることを特徴としてもよい。コンタクト層と反射防止膜との間にコンタクト層よりもエネルギーギャップの大きい保護層が挿入されているため、表面再結合電流を抑制でき、暗電流を小さくすることができる。また、本発明の受光素子は、キャップ層の厚さが０．１μｍ以下であることを特徴としてもよい。キャップ層の厚さが０．１μｍ以下であることにより、短波長側の受光感度をより高くすることができる。 Further, the light receiving element of the present invention further includes a protective layer made of the same material as the cap layer grown on the contact layer, and the high-concentration impurity region is formed so as to be continuous from the contact layer to the protective layer. It may be a feature. Since a protective layer having an energy gap larger than that of the contact layer is inserted between the contact layer and the antireflection film, the surface recombination current can be suppressed and the dark current can be reduced . Further, the light receiving element of the present invention may be characterized in that the thickness of the cap layer is 0.1 μm or less. When the thickness of the cap layer is 0.1 μm or less, the light receiving sensitivity on the short wavelength side can be further increased.
第２実施形態に係る受光素子の作製方法には、第１実施形態の受光素子の作製方法に、コンタクト層５上に保護層１０を成長する工程と、高濃度不純物領域７形成後に入射光の受光領域に対応する保護層１０の領域を除去する工程とが加えられる。なお、第１実施形態の受光素子作製方法においては、受光領域を形成するための選択エッチャントによるコンタクト層５を除去するプロセスで、受光領域以外に形成されているフォトレジスト等のマスクがエッチャントに溶解し、受光領域が大きくなってしまう可能性がある。しかし、第２実施形態の受光素子の構造において、コンタクト層５上に保護層１０が設けられているため、選択エッチャントに溶解しないＩｎＰからなる保護層１０をマスクとして選択エッチングを行うことにより、受光領域の拡大を防ぐことができ、受光領域の面積が正確に制御された受光素子を得ることができる。
The method for producing the light receiving element according to the second embodiment includes the step of growing the protective layer 10 on the contact layer 5 and the method of producing the incident light after forming the high-concentration impurity region 7 in the method for producing the light receiving element of the first embodiment. A step of removing the region of the protective layer 10 corresponding to the light receiving region is added. In the light-receiving element manufacturing method of the first embodiment, in the process of removing the contact layer 5 by selective etchant for forming the light receiving regions, dissolved in a mask such as a photoresist which is formed on the non-light-receiving region etchant However, the light receiving area may become large. However, in the structure of the light receiving element of the second embodiment, since the protective layer 10 is provided on the contact layer 5, the protective layer 10 made of InP that does not dissolve in the selected etchant is used as a mask for selective etching to receive light. It is possible to prevent the expansion of the region and obtain a light receiving element in which the area of the light receiving region is accurately controlled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35777299A JP2001177142A (en) | 1999-12-16 | 1999-12-16 | Photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35777299A JP2001177142A (en) | 1999-12-16 | 1999-12-16 | Photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001177142A JP2001177142A (en) | 2001-06-29 |
| JP2001177142A5 true JP2001177142A5 (en) | 2007-02-01 |
Family
ID=18455848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35777299A Pending JP2001177142A (en) | 1999-12-16 | 1999-12-16 | Photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001177142A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4331033B2 (en) * | 2004-03-29 | 2009-09-16 | 浜松ホトニクス株式会社 | Semiconductor light detecting element and manufacturing method thereof |
| JP2006019632A (en) * | 2004-07-05 | 2006-01-19 | Sumitomo Electric Ind Ltd | Group iii-v compound semiconductor device and method for diffusing impurity atom |
| JP2008047580A (en) * | 2006-08-11 | 2008-02-28 | Sumitomo Electric Ind Ltd | Semiconductor light receiving element |
| JP2008060161A (en) | 2006-08-29 | 2008-03-13 | Hamamatsu Photonics Kk | Optical detector, and method of manufacturing optical detector |
| JP5139923B2 (en) * | 2008-08-26 | 2013-02-06 | 浜松ホトニクス株式会社 | Semiconductor photo detector |
| JP2010177350A (en) * | 2009-01-28 | 2010-08-12 | Hamamatsu Photonics Kk | Infrared detecting element |
| JP2012119490A (en) * | 2010-11-30 | 2012-06-21 | Sumitomo Electric Device Innovations Inc | Semiconductor light-receiving element and light-receiving device having the same |
| JP6115890B2 (en) * | 2013-09-13 | 2017-04-19 | 住友電気工業株式会社 | Light receiving element, manufacturing method thereof, and optical sensor device |
| JP2023167864A (en) * | 2022-05-13 | 2023-11-24 | 浜松ホトニクス株式会社 | Semiconductor light-receiving element |
-
1999
- 1999-12-16 JP JP35777299A patent/JP2001177142A/en active Pending
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