JP2001177081A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a semiconductor device, mounted on the surface of a substrate while comprising a semiconductor chip having a light receiving part on the active surface, as compact as possible without sacrifice of the operation of the semiconductor chip due to irradiation with light. SOLUTION: The semiconductor device 1 comprises a semiconductor chip 3 having a connection electrode 3c provided on the active surface 3a along with a light receiving part 3h, and a substrate 2 having an opening 2o in the region for mounting the semiconductor chip 3, wherein the semiconductor chip 3 is flip-chip mounted on the surface 2a of the substrate 2 under such a mode as the active surface 3a of the semiconductor chip 3 faces the surface 2a of the substrate 2 and the light receiving part 3h of the semiconductor chip 3 faces the opening 2o in the substrate 2. Alternatively, the semiconductor chip 3 provided with a light receiving part 103h on the active face 103a and a connection electrode 103c on the mounting face 103b on the side opposite to the active face 103a is flip-chip mounted on the surface 102a of a substrate 102 under such a mode as the mounting face 103a faces the surface 102a of the substrate 102 and the light receiving part 103h is exposed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor chip having a light receiving portion on an active surface is mounted on a surface of a substrate.

[0002]

2. Description of the Related Art FIG. 14 shows a semiconductor device A as a reading sensor mounted on a video camera or the like. This semiconductor device A is mounted on a wafer by a CCD (charge coupled device).
ce) to form a semiconductor chip (CCD chip) C,
It is configured by mounting on the surface Ba of the substrate B.

In the semiconductor chip C, a light receiving portion (CCD) Ch and a plurality of connection electrodes Cc, Cc... Are formed on an active surface Ca, while a plurality of connection electrodes Cc are formed on a surface Ba of the substrate B. The electrodes Bc are formed.

The semiconductor chip C is fixed to the surface Ba of the substrate B via an adhesive G. The connection electrodes Cc, Cc... Of the semiconductor chip C and the connection electrodes Bc, Bc Are connected to one another via bonding wires W, W, respectively.

[0005]

However, as described above, the semiconductor device A in which the substrate B and the semiconductor chip C are connected by the bonding wires W requires a large mounting area, so that the semiconductor device A is inevitably increased in size. As a result, the size of the device on which the semiconductor device A is mounted is also increased.

On the other hand, recent miniaturization of semiconductor devices,
As a technology to meet the demand for thinning, a flip chip mounting method (flip chip bonding method) for mounting a semiconductor chip directly on the surface of a substrate has been provided.

Here, the semiconductor chip C in the above-described semiconductor device A is turned upside down so that the connection electrode C
By making c, Cc... face the substrate, flip-chip mounting on the substrate becomes possible.

However, when the semiconductor chip C is flip-chip mounted as described above, the semiconductor device can be made compact, but the light receiving portion Ch of the semiconductor chip C is formed on the same active surface Ca as the connection electrode Cc. Therefore, the light receiving unit Ch faces the substrate B, and the light receiving unit Ch
Since the light irradiation on the substrate is blocked by the substrate, the function as a reading sensor cannot be performed.

On the other hand, in order to ensure a reliable operation as a reading sensor, the light receiving portion Ch of the semiconductor chip C is moved upward (in the direction opposite to the substrate) as in the conventional art so that light is reliably irradiated to the light receiving portion Ch. ) Is desirably exposed, but since the connection electrode Cc of the semiconductor chip C is formed on the same active surface Ca as the light receiving portion Ch, it is not possible to flip-chip mount the semiconductor chip C on the substrate. It becomes possible.

The present invention has been made in view of the above circumstances, and has as its object to provide a semiconductor device capable of achieving as small a size as possible without impairing the operation of a semiconductor chip based on light irradiation.

[0011]

In order to achieve the above-mentioned object, a semiconductor device according to the present invention comprises a semiconductor chip having a light receiving portion and a connection electrode on an active surface, and an opening formed in a mounting area of the semiconductor chip. The semiconductor chip is flip-chip mounted on the surface of the substrate such that the active surface of the semiconductor chip faces the surface of the substrate and the light receiving portion of the semiconductor chip faces the opening of the substrate.

A semiconductor device according to the present invention includes a semiconductor chip provided with a light receiving portion on an active surface and a connection electrode provided on a mounting surface opposite to the active surface, and the mounting surface of the semiconductor chip is mounted on a substrate. The semiconductor chip is flip-chip mounted on the surface of the substrate in such a manner that the light receiving portion is exposed to face the surface of the substrate.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings showing embodiments. 1 to 4 show an example in which the present invention is applied to a semiconductor device constituting a reading sensor. A semiconductor device 1 according to the present invention is configured by mounting a semiconductor chip 3 on a substrate 2. I have.

The substrate 2 is made of a ceramic material such as aluminum oxide, a resin material such as epoxy, or a flexible material such as a liquid crystal polymer. As shown in FIG. 2o is formed.

A wiring pattern 2p made of a conductive material is formed on the surface 2a of the substrate 2. At predetermined positions of the wiring pattern 2p, connection electrodes 3c, 3c. , A plurality of connection electrodes 2c, 2c,.

On the other hand, as shown in FIG.
A wiring pattern (not shown) is formed on the active surface 3a of the wafer, and a light receiving unit 3h formed of a charge coupled device (CCD) is formed, and a predetermined position of the wiring pattern surrounds the light receiving unit 3h. Are formed in a manner surrounding the connection electrodes 3c.

As shown in FIG. 2, bumps 4, 4,... Made of a conductive material such as solder or Au (gold) are provided on the surfaces of the connection electrodes 3c, 3c.
Are formed by a plating method or a bumping method.

The semiconductor chip 3 is provided on the surface 2 a of the substrate 2.
By connecting the connection electrodes 3c and the connection electrodes 2c of the substrate 2 via the bumps 4 in a posture in which the active surface 3a faces the flip-chip mounting on the surface 2a of the substrate 2, Have been.

Here, as shown in FIGS. 1 and 2, in a state where the semiconductor chip 3 is mounted at a predetermined position on the substrate 2, the light receiving portion 3h of the semiconductor chip 3 is positioned facing the opening 2o of the substrate 2. I have.

As shown in FIG. 2, a gap between the periphery of the semiconductor chip 3 and the substrate 2 is sealed with an epoxy resin or the like in order to improve the mechanical bonding strength between the substrate 2 and the semiconductor chip 3. The sealing resin 5 is filled.

As shown in FIGS. 1 and 2, a cover 6 made of a glass plate is adhered to the back surface 2b of the substrate 2 for the purpose of protecting the light receiving portion 3h of the semiconductor chip 3 from the opening 2o of the substrate 2. It is attached by the agent 7.

Incidentally, in order to manufacture the semiconductor device 1 having the above configuration, first, the substrate 2 is prepared, and the bumps 4 are formed on the connection electrodes 3c of the semiconductor chip 3.

Next, after mounting the semiconductor chip 3 at a predetermined position on the substrate 2, the connection electrodes 2 c, 2 c.
And the connection electrodes 3c of the semiconductor chip 3,
The semiconductor chip 3 is flip-chip mounted on the substrate 2 by being mechanically and electrically connected by heating and pressing.

After the semiconductor chip 3 is flip-chip mounted on the substrate 2, the gap between the periphery of the semiconductor chip 3 and the substrate 2 is filled with a sealing resin 5. At this time, it goes without saying that the supply direction and the supply amount of the sealing resin 5 with respect to the gap are appropriately adjusted so that the above-described sealing resin 5 does not enter the opening 2o formed in the substrate 2. .

After the sealing resin 5 filled as described above is heated and cured, an adhesive 7 is applied to the back surface 2b of the substrate 2, and the cover 6 is attached to the back surface 2b of the substrate 2 by the adhesive 7.
Is completed, the semiconductor device 1 as a reading sensor is completed.

In the semiconductor device 1 having the above configuration, the substrate 2
Since the semiconductor chip 3 is flip-chip mounted on the
The mounting area of the semiconductor chip 3 on the substrate 2 can be reduced.

In a state where the semiconductor chip 3 is mounted on the substrate 2, the light receiving portion 3 h of the semiconductor chip 3 faces the opening 2 o of the substrate 2 so that the light receiving portion 3 h
Is surely irradiated with light.

Therefore, in the semiconductor device 1 having the above-described configuration, it is possible to achieve as small a size as possible without impairing the operation of the semiconductor chip 3 based on light irradiation.

Incidentally, the semiconductor device according to the present invention comprises:
The configuration is not limited to a configuration in which only one specific semiconductor chip having a light receiving unit is mounted on a substrate, and a configuration in which other electronic components are mounted together with the specific semiconductor chip on the substrate, as described below. It goes without saying that it also includes

The semiconductor device 10 shown in FIG.
The semiconductor chip 13 is flip-chip mounted on the electronic component 10A, and the electronic components 10A, 10B, 10
C and 10D are configured by flip-chip mounting on the substrate 12. In the semiconductor device 10, components that are basically the same as those of the semiconductor device 1 described above are given the same reference numerals as in FIGS. I do.

The semiconductor device 20 shown in FIG.
The semiconductor chip 23 is flip-chip mounted on the semiconductor chip and electronic components 20A, 20B, 20
C and 20D are soldered to the substrate 22. In the above semiconductor device 20,
The components basically the same as the semiconductor device 1 described above include:
A detailed description of components will be omitted by adding a number obtained by adding 20 to the reference numerals in FIGS.

The semiconductor device 30 shown in FIG.
A semiconductor chip 33 is mounted on the substrate 3 by flip chip mounting, and electronic components 30A, 30B, 30D such as semiconductor chips are mounted on the substrate 3.
2 and an electronic component 30C such as a semiconductor chip is soldered to a substrate 32. In the semiconductor device 30, components that are basically the same as those of the semiconductor device 1 described above are given the same reference numerals as in FIGS. I do.

A semiconductor device 40 shown in FIG. 8 is constructed by flip-chip mounting a semiconductor chip 43 on a substrate 42 using an anisotropic conductive bonding material 48. In addition,
The semiconductor device 40 is basically the same as the semiconductor device 1 of FIGS. 1 to 4 except that the anisotropic conductive bonding material 48 is used. 4
By adding a number obtained by adding 40 to the sign of, a detailed description of the components will be omitted.

Incidentally, in order to manufacture the semiconductor device 40 having the above configuration, first, each connection electrode 43 of the semiconductor chip 43 is formed.
c, 43c... and the substrate 44
The anisotropic conductive bonding material 48 is supplied so as to cover the connection electrodes 42c, 42c,.

Here, the anisotropic conductive bonding material 48 is formed by adding a large number of conductive particles 48b, 4 to a paste-like insulating resin 48a.
8b are kneaded. Note that as the anisotropic conductive bonding material, a so-called anisotropic conductive film in which an insulating resin containing conductive particles is formed into a film shape can be used.

After supplying the anisotropic conductive bonding material 48 to the substrate 42, the semiconductor chip 43 is mounted at a predetermined position on the substrate 42, and the semiconductor chip 43 is thermocompression-bonded to the substrate 42 by a bonding tool (not shown).

Thus, each bump 4 of the semiconductor chip 43
, 44,... And connection electrodes 42c, 42c of the substrate 42
Are sandwiched between the conductive particles 48b of the anisotropic conductive bonding material 48, the substrate 42 is electrically connected to the semiconductor chip 43, and the anisotropic conductive bonding material 4
By thermally hardening the insulating resin 48a in 8, the substrate 42 and the semiconductor device 43 are mechanically joined.

As described above, after the semiconductor device 43 is flip-chip mounted on the substrate 42, the cover 6 is attached to the back surface 42b of the substrate 42 using the adhesive 47, thereby completing the semiconductor device 40 as a reading sensor. Becomes

According to the semiconductor device 40 manufactured as described above, as much as possible in the semiconductor device 1 described above, it is possible to achieve as small a size as possible without impairing the operation of the semiconductor chip based on light irradiation. It becomes possible.

According to the semiconductor device 40 having the above structure, the insulating resin 48a of the anisotropic conductive bonding material 48 mechanically bonds the substrate 42 and the semiconductor device 43. It is not necessary to supply the sealing resin at the time of manufacturing the device, and the manufacturing process is simplified.

When the semiconductor device 40 is manufactured, it is necessary to adjust the supply amount of the anisotropic conductive bonding material 48 so as not to enter the opening 42o of the substrate 42. Since the surface of the substrate 42 is sometimes released, it is extremely easy to adjust the supply amount. Further, if an anisotropic conductive film is used as the anisotropic conductive bonding material, the supply amount can be extremely easily controlled. Become.

Here, similarly to the semiconductor chip 43 of the semiconductor device 40 shown in FIG.
(FIG. 5) Semiconductor chip 13 and electronic components 10A to 10
D, semiconductor chip 23 of semiconductor device 20 (FIG. 6), semiconductor chip 33 of semiconductor device 30 (FIG. 7) and electronic component 30
It goes without saying that semiconductor chips (electronic components) flip-chip mounted on a substrate, such as A, 30B, and 30D, can be flip-chip mounted using an anisotropic conductive bonding material.

On the other hand, FIGS. 9 to 12 also show examples in which the present invention is applied to a semiconductor device constituting a reading sensor.
The semiconductor device 100 according to the present invention is configured by mounting a semiconductor chip 103 on a substrate 102.

The substrate 102 is formed of a ceramic material made of aluminum oxide or the like, a resin material such as epoxy, or a flexible material made of a liquid crystal polymer or the like. As shown in FIG. (Not shown) are formed, and a plurality of connection electrodes 1 corresponding to the connection electrodes 103c, 103c,.
.. Are formed.

As shown in FIG. 12, the semiconductor chip 103 has a wiring pattern 103p formed on the active surface 103a of the wafer and a CCD (charge coupled device).
A light receiving portion 103h made of ice) is formed.

On the mounting surface 103b of the semiconductor chip 103 opposite to the active surface 103a, a plurality of connection electrodes 103c, 103c... Are formed, and these connection electrodes 103c, 103c. Are connected to a wiring pattern (not shown) on the active surface 103a through the formed through holes 103t.

Further, as shown in FIG. 10, bumps 104 made of a conductive material such as solder or Au (gold) are plated on the surfaces of the connecting electrodes 103c of the semiconductor chip 103, respectively. It is formed by a method or a bumping method.

The semiconductor chip 103 is connected to the connection electrodes 103c and the substrate 10 via the bumps 104 with the mounting surface 103b facing the surface 102a of the substrate 102.
By bonding the two connection electrodes 102c to the surface 102a of the substrate 102, flip-chip mounting is performed.

Here, as shown in FIG. 10, when the semiconductor chip 103 is mounted at a predetermined position on the substrate 102, the light receiving portion 103h of the semiconductor chip 103 is exposed upward.

As shown in FIG. 10, a sealing resin 105 made of epoxy resin or the like is provided in a gap between the substrate 102 and the semiconductor chip 103 in order to improve mechanical bonding strength between the substrate 102 and the semiconductor chip 103. Is filled.

Incidentally, in order to manufacture the semiconductor device 100 having the above structure, first, a substrate 102 is prepared, and a bump 104 is formed on each connection electrode 103c of the semiconductor chip 103.
To form

Next, after mounting the semiconductor chip 103 at a predetermined position on the substrate 102, each connection electrode 102 c of the substrate 102 and each connection electrode 103 of the semiconductor chip 103 are mounted.
The semiconductor chip 103 is flip-chip mounted on the substrate 102 by mechanically and electrically connecting the semiconductor chip 103 to the substrate 102 by heating and pressing.

After the semiconductor chip 103 is flip-chip mounted on the substrate 102, the substrate 102 and the semiconductor chip 10
3 is filled with the sealing resin 105 and the sealing resin 105 is cured by heating, whereby the semiconductor device 100 as a reading sensor is completed.

In the semiconductor device 100 having the above-described structure, the semiconductor chip 103 is flip-chip mounted on the substrate 102, so that the mounting area of the semiconductor chip 103 on the substrate 102 can be reduced.

When the semiconductor chip 103 is mounted on the substrate 102, the light receiving section 1 of the semiconductor chip 103
By exposing 03h upward, the light receiving section 103h of the semiconductor chip 103 is reliably irradiated with light.

Thus, the semiconductor device 100 having the above-described configuration
According to this, it is possible to achieve as small a size as possible without impairing the operation of the semiconductor chip 103 based on light irradiation.

In the above-described semiconductor chip 103,
Although the wiring pattern 103p and the connection electrode 103c are connected by the through hole 103t, the wiring pattern 103p and the connection electrode 103c can be connected by a multilayer wiring formed on the wafer.

A semiconductor device 110 shown in FIG. 13 is configured by flip-chip mounting a semiconductor chip 113 on a substrate 112 using an anisotropic conductive bonding material 118. The semiconductor device 110 is made of an anisotropic conductive bonding material 11.
8 except that the semiconductor device 10 of FIGS.
Since it is basically the same as 0, the same elements as those of the semiconductor device 100 are denoted by the same reference numerals as in FIG.

In order to manufacture the semiconductor device 110, first, each connection electrode 113c of the semiconductor chip 113 is formed.
While the bumps 114 are formed on the surface 11 of the substrate 112.
An anisotropic conductive bonding material 118 is supplied to 2a so as to cover the connection electrode 112c.

Next, the semiconductor chip 113 is mounted at a predetermined position on the substrate 112, and the semiconductor chip 113 is thermocompression-bonded to the substrate 112 by a bonding tool (not shown), and the semiconductor chip 113 is flip-chip mounted on the substrate 112. The conductive particles 118b of the anisotropic conductive bonding material 118 are sandwiched between each bump 114 of the semiconductor chip 113 and each connection electrode 112c of the substrate 112, so that the substrate 112 is electrically connected to the semiconductor chip 113. The substrate 112 and the semiconductor device 113 are mechanically joined by thermally connecting the insulating resin 118a of the anisotropic conductive bonding material 118, thereby completing the semiconductor device 110 as a reading sensor. Becomes

According to the semiconductor device 110 manufactured as described above, as much as possible in the semiconductor device 100 described above, it is possible to achieve as small a size as possible without impairing the operation of the semiconductor chip 113 based on light irradiation. Becomes possible.

According to the semiconductor device 110 having the above structure, the insulating resin 118a of the anisotropic conductive bonding material 118 mechanically bonds the substrate 112 and the semiconductor device 113. It is not necessary to supply the sealing resin at the time of manufacturing, and the manufacturing process is simplified.

Here, in the semiconductor device 100 shown in FIGS. 9 to 12 and the semiconductor device 110 shown in FIG. 13, only one specific semiconductor chip having a light receiving portion is mounted on the substrate. Needless to say, the semiconductor device according to the present invention also includes a configuration in which other electronic components are mounted together with a specific semiconductor chip on a substrate.

In each of the above embodiments, an example is shown in which the present invention is applied to a reading sensor (semiconductor device) having a CCD chip mounted on a substrate.
Of course, the present invention can also be effectively applied to a read sensor in which various semiconductor chips having a light receiving section such as an ntary metal oxide semiconductor chip are mounted on a substrate.

In addition to the reading sensor, for example, UVE
PROM (ultra violet erasable and programmable RO
M) Needless to say, the present invention can be very effectively applied to various semiconductor devices in which various semiconductor chips such as chips that operate based on light irradiation on a light receiving unit are mounted on a substrate. .

[0066]

As described in detail above, the semiconductor device according to the present invention comprises a semiconductor chip provided with a connection electrode together with a light receiving portion on an active surface, and a substrate having an opening formed in a mounting area of the semiconductor chip. The semiconductor chip is flip-chip mounted on the surface of the substrate such that the active surface of the semiconductor chip faces the surface of the substrate and the light receiving portion of the semiconductor chip faces the opening of the substrate. According to the above configuration, the semiconductor chip is flip-chip mounted on the substrate, so that the mounting area of the semiconductor chip with respect to the substrate can be reduced. Light irradiation is surely performed. Thus, according to the semiconductor device of the present invention, it is possible to achieve as small a size as possible without impairing the operation of the semiconductor chip based on light irradiation.

A semiconductor device according to the present invention includes a semiconductor chip having a light receiving portion on an active surface and a connection electrode provided on a mounting surface opposite to the active surface, wherein the mounting surface of the semiconductor chip is mounted on a substrate. The semiconductor chip is flip-chip mounted on the surface of the substrate in such a manner that the light receiving portion is exposed to face the surface of the substrate. According to the above configuration, by mounting the semiconductor chip on the substrate by flip-chip, the mounting area of the semiconductor chip with respect to the substrate can be reduced, and the light receiving portion is exposed by providing the connection electrode on the mounting surface of the semiconductor chip. Thus, light irradiation is reliably performed on the light receiving unit. Thus, according to the semiconductor device of the present invention, it is possible to achieve as small a size as possible without impairing the operation of the semiconductor chip based on light irradiation.

[Brief description of the drawings]

FIGS. 1A and 1B are a plan view and a fragmentary bottom view showing a semiconductor device according to the present invention.

FIG. 2 shows a semiconductor device according to the present invention in FIG.
II-II sectional side view.

FIG. 3 is a plan view showing a substrate of a semiconductor device according to the present invention.

FIGS. 4A and 4B are a side view and a bottom view showing a semiconductor chip of a semiconductor device according to the present invention.

FIGS. 5A and 5B are a plan view and a sectional side view showing another embodiment of the semiconductor device according to the present invention.

FIGS. 6A and 6B are a plan view and a cross-sectional side view showing another embodiment of a semiconductor device according to the present invention.

FIGS. 7A and 7B are a plan view and a cross-sectional side view showing another embodiment of a semiconductor device according to the present invention.

FIG. 8 is a sectional side view showing another embodiment of the semiconductor device according to the present invention.

FIG. 9 is a plan view showing a semiconductor device according to the present invention.

FIG. 10 shows a semiconductor device according to the present invention.
-X-ray sectional side view.

FIG. 11 is a plan view showing a substrate in the semiconductor device of FIG. 9;

12A, 12B, and 12C are a plan view, a cross-sectional side view, and a bottom view illustrating a semiconductor chip in the semiconductor device in FIG. 9;

FIG. 13 is a sectional side view showing another embodiment of the semiconductor device according to the present invention.

14A and 14B are a plan view and a cross-sectional side view showing a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Substrate, 2a ... Surface, 2c ... Connection electrode, 2o ... Opening, 3 ... Semiconductor chip, 3h ... Light receiving part, 3c ... Connection electrode, 10, 20, 30, 40 ... Semiconductor device, 100: semiconductor device, 102: substrate, 102: surface, 102c: connection electrode, 103: semiconductor chip, 103h: light receiving portion, 103c: connection electrode, 110: semiconductor device.

Claims (3)

[Claims] 1. A semiconductor device comprising: a semiconductor chip having a light receiving portion on an active surface mounted on a surface of a substrate; and a semiconductor chip having an active surface provided with connection electrodes together with the light receiving portion; A substrate having an opening formed in a chip mounting area, wherein the active surface of the semiconductor chip faces the surface of the substrate, and the light receiving portion of the semiconductor chip faces the opening of the substrate, A semiconductor device, wherein the semiconductor chip is flip-chip mounted on a surface of the substrate. 2. The semiconductor device according to claim 1, wherein a light-transmitting cover for covering the opening formed in the substrate is provided on the back surface of the substrate. 3. A semiconductor device comprising: a semiconductor chip having a light receiving portion on an active surface mounted on a surface of a substrate; and a semiconductor chip provided with connection electrodes on a mounting surface opposite to the active surface. The semiconductor chip is flip-chip mounted on the surface of the substrate in a mode in which the mounting surface of the semiconductor chip is opposed to the surface of the substrate and the light receiving portion of the semiconductor chip is exposed. Characteristic semiconductor device.