JP2001176950A - Wafer conveyor - Google Patents
Wafer conveyorInfo
- Publication number
- JP2001176950A JP2001176950A JP37660699A JP37660699A JP2001176950A JP 2001176950 A JP2001176950 A JP 2001176950A JP 37660699 A JP37660699 A JP 37660699A JP 37660699 A JP37660699 A JP 37660699A JP 2001176950 A JP2001176950 A JP 2001176950A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- gas
- transfer
- chamber
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はウエーハ搬送装置に
関し、詳しくは、複数の処理装置を用いて処理を行う半
導体装置の生産ラインにおいて、各処理室間や各種処理
装置間などを、高い真空下で半導体ウエーハを搬送し、
高い真空下での各種処理に供することができるウエーハ
搬送装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer transfer apparatus, and more particularly, to a semiconductor device production line for processing using a plurality of processing apparatuses, which is used under a high vacuum between processing chambers and various processing apparatuses. Transports semiconductor wafers at
The present invention relates to a wafer transfer device that can be used for various processes under a high vacuum.
【０００２】[0002]
【従来の技術】各種半導体装置の生産において、カセッ
ト単位で半導体ウエーハを処理する方法が一般に行われ
ているが、処理が終了した半導体ウエーハを一枚づつ次
の処理装置へ送って処理を順次行う方法も提案されてお
り、フローラインによる生産方式として期待されてい
る。この方式による半導体ウエーハの搬送は、気体窒素
を半導体ウエーハの下方から吹き上げて半導体ウエーハ
を浮上させ、各処理装置間を搬送する窒素浮上搬送法を
中心として検討が進められている。これら浮上搬送法に
よる従来の搬送装置は、例えば特開平５−２１１２２５
に提案されているように、大気圧中でウエーハの浮上と
搬送を行う大気圧法による装置が用いられている。2. Description of the Related Art In the production of various semiconductor devices, a method of processing semiconductor wafers in a cassette unit is generally performed. The processed semiconductor wafers are sent one by one to a next processing apparatus to sequentially perform the processing. A method has also been proposed and is expected as a production method using a flow line. The transfer of a semiconductor wafer by this method is being studied mainly by a nitrogen levitation transfer method in which gaseous nitrogen is blown up from below the semiconductor wafer to float the semiconductor wafer, and is transferred between processing apparatuses. A conventional transfer apparatus using these floating transfer methods is disclosed in, for example,
As described in U.S. Pat. No. 6,098,098, an apparatus using an atmospheric pressure method for floating and transporting a wafer under atmospheric pressure is used.
【０００３】[0003]
【発明が解決しょうとする課題】しかし、上記従来の大
気圧中における浮上搬送法には、大気圧中における搬
送であるため、半導体ウエーハを真空処理室に入れる場
合には、真空処理室と大気室の間での半導体ウエーハの
移動を可能とするために、排気とベントを行うバッファ
室が必要である、上記バッファ室において排気とベン
トを行う行程において、半導体ウエーハの端部に付着し
ていた塵埃などの微粒子が舞上がり、半導体ウエーハの
表面に再付着して汚染される、バッファ室をシールす
るために必要なＯリングからの放出ガスのため、処理室
内を超高真空に保つのが困難である、プロセス処理や
チッピングの際に発生した微粒子が、搬送中に供給され
る大量の気体（窒素）によって舞上がり、半導体ウエー
ハの表面上に付着する、各処理室間にそれぞれバッフ
ァ室を設けねばならないため、各バッファ室を通過する
時間がそれぞれ必要となって処理枚数が少なくなる、
大気圧中でウエーハの浮上が行われるため、ウエーハと
搬送板の間の隙間が大きくなって変動しやすいので、搬
送されてきたウエーハを高い精度で所定の位置に停止さ
せることが困難である、および処理装置のコストが上
昇する、など多くの問題があった。However, in the conventional floating transfer method under atmospheric pressure, since the transfer is performed under atmospheric pressure, when a semiconductor wafer is put into a vacuum processing chamber, the vacuum processing chamber and the air In order to enable the movement of the semiconductor wafer between the chambers, a buffer chamber for exhausting and venting is required. In the process of performing the exhausting and venting in the buffer chamber, the semiconductor wafer adhered to the end of the semiconductor wafer. Particles such as dust fly up and re-adhere to the surface of the semiconductor wafer and become contaminated.The gas released from the O-ring required to seal the buffer chamber makes it difficult to keep the processing chamber at an ultra-high vacuum. Fine particles generated during processing and chipping are soared by a large amount of gas (nitrogen) supplied during transport and adhere to the surface of the semiconductor wafer. Because each between sense chamber must provide a buffer chamber, the time to pass through each buffer chamber is processed sheets is reduced is required, respectively,
Since the wafer is lifted under the atmospheric pressure, the gap between the wafer and the transfer plate becomes large and fluctuates, so that it is difficult to stop the transferred wafer at a predetermined position with high accuracy, and There were many problems such as an increase in the cost of the device.
【０００４】本発明の目的は、従来のウエーハ搬送装置
の有する上記問題を解決し、半導体装置の製造ラインを
構成するマルチチャンバ型処理装置内における各処理装
置間のウエーハの搬送を、バッファ室なしに超高真空下
で高い精度で行うことができ、ウエーハの搬送後におけ
る各処理室内を速やかに超高真空にすることができる、
処理可能なウエーハの枚数が多い低コストのウエーハ搬
送装置を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the conventional wafer transfer apparatus, and to transfer a wafer between processing apparatuses in a multi-chamber type processing apparatus constituting a semiconductor device manufacturing line without using a buffer chamber. Can be performed with high accuracy under ultra-high vacuum, and each processing chamber can be quickly brought into ultra-high vacuum after wafer transfer.
An object of the present invention is to provide a low-cost wafer transfer apparatus that can process a large number of wafers.
【０００５】[0005]
【課題を解決するための手段】上記問題を解決するため
の本発明のウエーハ搬送装置は、処理すべきウエーハを
所望の場所に搬送するための搬送室と、当該搬送室内に
設けられた上記ウエーハをその上に保持する搬送板と、
上記ウエーハを搬送すべき方向に傾斜して上記搬送板に
設けられた複数の噴出穴と、当該噴出穴に下方から気体
を供給して上記ウエーハの浮上と搬送を行う手段と、上
記搬送室内を排気する手段を少なくとも具備したウエー
ハ搬送装置において、上記気体の流量を制御して、上記
搬送板とウエーハの間の隙間を流れる上記気体の流れ
を、分子流若しくは遷移流とする手段を具備することを
特徴とする。According to the present invention, there is provided a wafer transfer apparatus for transferring a wafer to be processed to a desired place, and a wafer provided in the transfer chamber. A transport plate for holding the
A plurality of ejection holes provided on the conveyance plate inclined in a direction in which the wafer is to be conveyed, means for supplying gas from below to the ejection holes to float and convey the wafer, and In a wafer transfer apparatus having at least an exhaust unit, a flow of the gas is controlled so that a flow of the gas flowing in a gap between the transfer plate and the wafer is set as a molecular flow or a transition flow. It is characterized by.
【０００６】すなわち、本発明のウエーハ搬送装置は、
図１および２それぞれ一部平面構造および一部断面構造
の一例を示したように、搬送室１内には多数の噴出孔
３、センサ穴５および制御穴８が形成された搬送板２が
設けられており、搬送すべきウエーハ４は上記搬送板２
の上に置かれる。上記噴出孔３および制御穴８には、気
体供給室１２を介して気体（例えば窒素）が供給され、
上記気体の静圧とウエーハ４の下面の面積の積が、ウエ
ーハ４の重力と釣り合ったときに、ウエーハ４は浮上す
る。That is, the wafer transfer device of the present invention comprises:
As shown in FIGS. 1 and 2, a transfer plate 2 in which a large number of ejection holes 3, sensor holes 5 and control holes 8 are formed is provided in a transfer chamber 1 as shown in an example of a partially planar structure and a partially cross-sectional structure, respectively. The wafer 4 to be transported is transported by the transport plate 2
On top of. A gas (for example, nitrogen) is supplied to the ejection hole 3 and the control hole 8 via a gas supply chamber 12.
When the product of the static pressure of the gas and the area of the lower surface of the wafer 4 is balanced with the gravity of the wafer 4, the wafer 4 floats.
【０００７】図２から明らかなように、上記噴出孔３は
ウエーハ４の下面と搬送方向３０に対して傾斜して（例
えば上記下面からの垂線に対して約２２゜）設けられて
おり、浮上したウエーハ４は、噴出穴３から噴出された
上記気体の圧力によって搬送方向３０へ搬送される。As is apparent from FIG. 2, the jet holes 3 are provided at an angle with respect to the lower surface of the wafer 4 with respect to the transport direction 30 (for example, about 22 ° with respect to a perpendicular from the lower surface). The wafer 4 is transported in the transport direction 30 by the pressure of the gas ejected from the ejection holes 3.
【０００８】上記搬送室１は、上記搬送板２によって上
部の真空室１０と下部の気体供給室１２に二分されてい
る。図２から明らかなように、上記気体供給室１２に供
給される気体の流量は、流量制御器（マスフローコント
ローラ）１４によって極めて少なくされるとともに、±
１％の精度で制御されるので、上記隙間１１は極めて小
さくできるばかりでなく、高い精度でほぼ一定に保たれ
る。例えば、上記流量制御器１４を用いて上記気体の圧
力を７０Ｐａ（０．５Ｔｏｒｒ）とすれば、上記隙間１
１は０．０１８ｍｍ±０．００１８ｍｍに保たれる。The transfer chamber 1 is divided into an upper vacuum chamber 10 and a lower gas supply chamber 12 by the transfer plate 2. As apparent from FIG. 2, the flow rate of the gas supplied to the gas supply chamber 12 is extremely reduced by a flow rate controller (mass flow controller) 14, and
Since the gap 11 is controlled with an accuracy of 1%, the gap 11 can not only be made extremely small but also kept almost constant with high accuracy. For example, if the pressure of the gas is set to 70 Pa (0.5 Torr) using the flow controller 14, the gap 1
1 is kept at 0.018 mm ± 0.0018 mm.
【０００９】周知のように、隙間ｈと流れる気体の平均
自由行程λの間にｈ≪λの関係が成立するとき、気体の
流れはクヌーセン流または分子流と呼ばれ、この分子流
と粘性が問題になる通常の粘性流の中間の流れは遷移流
または中間流と呼ばれる。分子流または遷移流の場合の
気体の流量は、粘性流の１０−４〜１０−３になり、は
るかに少ない。また、ウエーハ４とその下の搬送板２の
間の隙間１１を流れる気体の流れは、一般にＶａｃｕｕ
ｍ ２０（１２）５２５、１９７０に記載されている
Ｖ．ｄ’ＡＢｒｏｗｎによる式で表され、例えば上記隙
間０．０１８ｍｍを流れる圧力７０Ｐａの気体は、この
式から分子流であると判断される。As is well known, when the relationship h≪λ is established between the gap h and the mean free path λ of the flowing gas, the gas flow is called a Knudsen flow or a molecular flow. Intermediate flows of ordinary viscous flows of interest are called transitional or intermediate flows. The flow rate of the gas in the case of the molecular flow or the transition flow is much lower than the viscous flow of 10 −4 to 10 −3 . In addition, the flow of gas flowing through the gap 11 between the wafer 4 and the transport plate 2 thereunder is generally Vacuu.
m 20 (12) 525, 1970. A gas having a pressure of 70 Pa flowing through the gap of 0.018 mm, for example, is determined to be a molecular flow from this formula by d'ABrown.
【００１０】本発明においては、流量制御器１４によっ
て気体の流量を極めて少なくして、隙間１１を小さくす
ることができる。例えば、隙間１１に供給される上記気
体の圧力を７０〜７００Ｐａにすれば、上記隙間１１は
０．０１８〜０．０５ｍｍと極めて小さく保たれる。隙
間１１に供給される上記気体の圧力を７００Ｐａ以下、
隙間１１を０．０５ｍｍ以下にそれぞれすれば、上記隙
間１１を流れる気体の流れの状態は、分子流または遷移
流（中間流）になり、ターボ分子ポンプ１８による排気
を行うことによって、処理室１内の真空度は高く保た
れ、バッファ室を使用することなしに、各種真空処理装
置に直接接続できる。すなわち、一般に、０．１３３〜
１．３×１０−５Ｐａを高真空、１．３×１０−５Ｐａ
以下を超高真空と呼ばれるが、本発明においては、上記
のように、隙間１１に供給される上記気体の圧力を７０
〜７００Ｐａにすることによって、隙間１１を流れる気
体の流れは分子流若しくは遷移流になる。そのため、例
えばターボ分子ポンプなどによる排気を行うことによっ
て、搬送室１内は容易に１．３×１０−５Ｐａ以下の超
高真空になり、たとえばスパッタリングなど、超高真空
下での処理を行うための各種処理室に直接接続して所望
の処理に供することができる。In the present invention, the flow rate of the gas can be extremely reduced by the flow controller 14 so that the gap 11 can be reduced. For example, if the pressure of the gas supplied to the gap 11 is set to 70 to 700 Pa, the gap 11 is kept extremely small at 0.018 to 0.05 mm. The pressure of the gas supplied to the gap 11 is 700 Pa or less,
If the gap 11 is set to 0.05 mm or less, the flow state of the gas flowing through the gap 11 becomes a molecular flow or a transitional flow (intermediate flow), and the processing chamber 1 is evacuated by the turbo molecular pump 18. The degree of vacuum inside is kept high, and it can be directly connected to various vacuum processing devices without using a buffer chamber. That is, generally,
1.3 × 10 −5 Pa in high vacuum, 1.3 × 10 −5 Pa
The following is called ultra-high vacuum. In the present invention, as described above, the pressure of the gas supplied to the gap 11 is reduced to 70
By setting the pressure to 700 Pa, the flow of the gas flowing through the gap 11 becomes a molecular flow or a transition flow. Therefore, for example, by performing evacuation by a turbo molecular pump or the like, the inside of the transfer chamber 1 easily becomes an ultra-high vacuum of 1.3 × 10 −5 Pa or less, and processing under an ultra-high vacuum such as sputtering is performed. Can be directly connected to various processing chambers for desired processing.
【００１１】一方、大気圧においてウエーハの浮上と搬
送が行われる上記従来の大気圧法では、大気圧（７６０
Ｔｏｒｒ＝１０５Ｐａ）の±１％は±１０３Ｐａである
から、この場合の隙間１１の変動は±０．０６８ｍｍで
あり、隙間１１を０．２ｍｍ以下にすることはできな
い。そのため、上記従来の大気圧法では、制御器を使用
せずに多量の気体を流量制御なしに供給して、上記隙間
を０．５ｍｍ程度と大きくするとともに、供給された多
量の気体を真空ポンプによって排出しており、搬送室内
の真空度を高く保つことは困難である。On the other hand, in the above-mentioned conventional atmospheric pressure method in which the wafer is lifted and transported at the atmospheric pressure, the atmospheric pressure (760
Since ± 1% of (Torr = 10 5 Pa) is ± 10 3 Pa, the variation of the gap 11 in this case is ± 0.068 mm, and the gap 11 cannot be reduced to 0.2 mm or less. Therefore, in the above-mentioned conventional atmospheric pressure method, a large amount of gas is supplied without flow rate control without using a controller, the gap is increased to about 0.5 mm, and the supplied large amount of gas is vacuum pumped. And it is difficult to keep the degree of vacuum in the transfer chamber high.
【００１２】上記のように、本発明においては、搬送板
２にはウエーハ４の浮上と搬送を行うための噴出穴３、
搬送されてきたウエーハ４を所定の位置に停止させるた
めのセンサ穴５およびウエーハ４の搬送方向３０からの
横ずれを防止するための制御穴８が設けられている。ウ
エーハ４の浮上および搬送時には、上記噴出孔３および
制御孔８のすべてに気体を同時に供給し、ターボ分子ポ
ンプ１８によって排気を行って、搬送室１内を高い真空
度に保つ。隙間１１はウエーハ４の下の気体の圧力に依
存し、本発明においては、気体供給室１２へ供給される
気体の流量が、上記のように流量制御器１４によって極
めて少なくされるとともに、±１％の精度で制御される
ので、極めて小さい隙間１１が高い精度で保たれ、ウエ
ーハ４の安定した浮上と搬送が行われる。As described above, in the present invention, the ejection holes 3 for floating and transporting the wafer 4 are provided on the transport plate 2.
A sensor hole 5 for stopping the conveyed wafer 4 at a predetermined position and a control hole 8 for preventing the wafer 4 from shifting from the conveying direction 30 are provided. When the wafer 4 floats and transports, gas is simultaneously supplied to all of the ejection holes 3 and the control holes 8, and exhaust is performed by the turbo molecular pump 18, so that the inside of the transport chamber 1 is maintained at a high degree of vacuum. The gap 11 depends on the pressure of the gas below the wafer 4, and in the present invention, the flow rate of the gas supplied to the gas supply chamber 12 is extremely reduced by the flow rate controller 14 as described above, and ± 1. %, The extremely small gap 11 is maintained with high accuracy, and stable floating and transport of the wafer 4 are performed.
【００１３】また、大気圧中でウエーハの搬送が行われ
る上記従来の搬送装置の場合は、ウエーハ４の下部周辺
からの気体の噴出によって、ウエーハの下部の中心部が
真空状態になり、ウエーハ４の上面に加わる大気圧によ
ってウエーハの浮上が妨げられる。しかし、本発明の場
合はウエーハ４の上部が真空であるため、ウエーハ４の
下部が減圧になっても、このような余分の力がウエーハ
４の上部に加わることはなく、ウエーハ４の浮上が妨げ
られる恐れはない。Further, in the case of the above-described conventional transfer apparatus in which the wafer is transferred at atmospheric pressure, the central portion of the lower portion of the wafer is evacuated due to the ejection of gas from the periphery of the lower portion of the wafer 4, and the wafer 4 Atmospheric pressure applied to the upper surface of the wafer prevents the wafer from floating. However, in the case of the present invention, since the upper part of the wafer 4 is vacuum, even if the lower part of the wafer 4 is decompressed, such an extra force is not applied to the upper part of the wafer 4 and the floating of the wafer 4 is prevented. There is no fear of being hindered.
【００１４】これらの結果として、本発明によれば、ウ
エーハの浮上と搬送に必要な気体の量は、気体の粘性流
領域で使用された上記従来の方法にくらべて、分子流領
域では１０−４以下、遷移流領域では１０−３以下と、
はるかに少ない。[0014] As a result, according to the present invention, the amount of gas required to transport the floating of the wafer, compared to the conventional methods used in the viscous flow region of the gas, in the molecular flow region 10 - 4 or less, 10 -3 or less in the transition flow region,
Much less.
【００１５】通常の場合、ウエーハ４の搬送速度は０．
１〜１ｍ／ｓ、加速度は０．１〜１ｍ／ｓ２が好まし
く、供給される気体の圧力によって所望の値に調整され
る。また、例えば、搬送室２の内面の仕上げの粗さＲａ
を１．６ｓ、平均の最大高さＲｍａｘを３．２ｓとすれ
ば、微小な隙間１１を保ってウエーハ４を浮上状態に保
つことは容易である。さらに、ウエーハ４が浮上せずに
搬送板２の上にあるときに、ウエーハ４と搬送板２の接
触面積が大きいと、ウエーハ４が汚染される恐れがある
が、搬送板２の上面に点接触面６を設けて両者の接触面
積を小さくすれば、このようなウエーハ４の汚染は容易
に防止できる。In a normal case, the transfer speed of the wafer 4 is set to 0.1.
1~1m / s, the acceleration is preferably 0.1 to 1 m / s 2, it is adjusted to a desired value by the pressure of the gas supplied. Further, for example, roughness of the finish of the inner surface of the transfer chamber 2 R a
Is 1.6 s and the average maximum height R max is 3.2 s, it is easy to maintain the minute gap 11 and keep the wafer 4 in a floating state. Further, if the contact area between the wafer 4 and the transfer plate 2 is large when the wafer 4 is not floating and is on the transfer plate 2, the wafer 4 may be contaminated. If the contact surface 6 is provided to reduce the contact area between them, such contamination of the wafer 4 can be easily prevented.
【００１６】本発明のウエーハ搬送装置は、搬送された
上記ウエーハの位置を検出するための手段と、当該位置
を検出するための手段からの信号にもとづいて上記ウエ
ーハの停止および上記ウエーハを持ち上げて上方へ移す
手段を具備することができる。上記ウエーハの位置を検
出するための手段としては、上記搬出板の所定の位置に
形成されたセンサ穴および当該センサ穴の下方に配置さ
れた光センサを用いることが実用上好ましい。A wafer transfer apparatus according to the present invention comprises means for detecting the position of the transferred wafer, and stopping and raising the wafer based on a signal from the means for detecting the position. Means for moving upward can be provided. As means for detecting the position of the wafer, it is practically preferable to use a sensor hole formed at a predetermined position on the unloading plate and an optical sensor arranged below the sensor hole.
【００１７】また、本発明のウエーハ搬送装置は、搬送
されてきた上記ウエーハを減速する手段を具備し、当該
減速する手段によって減速されたウエーハの位置を、上
記ウエーハの位置を検出するための手段によって検出す
ることができる。上記ウエーハを減速させる手段として
は静電チャックが好ましい。上記のように、本発明では
ウエーハ４と搬送板２の間の空隙１１が極めて小さいの
で、搬送されてきたウエーハ４を、ウエーハ４の下方に
配置された静電チャック７によって、容易に減速させる
ことができる。搬送されてきたウエーハ４の位置を検出
する場合、このようにウエーハ４を減速した後で位置の
検出を行った方が、減速せずに検出を行った場合より、
はるかに高い精度で検出できることはいうまでもない。Further, the wafer transfer apparatus of the present invention comprises a means for decelerating the wafer conveyed, and a means for detecting the position of the wafer decelerated by the means for decelerating the position of the wafer. Can be detected by The means for decelerating the wafer is preferably an electrostatic chuck. As described above, in the present invention, since the gap 11 between the wafer 4 and the transport plate 2 is extremely small, the transported wafer 4 is easily decelerated by the electrostatic chuck 7 disposed below the wafer 4. be able to. When detecting the position of the transferred wafer 4, detecting the position after decelerating the wafer 4 in this way is better than detecting the position without decelerating the wafer 4.
Needless to say, it can be detected with much higher accuracy.
【００１８】ウエーハ４の搬送中に静電チャック７は常
に通電されており、この静電チャック７によって減速さ
れたウエーハ４が所定の位置に到達し、ウエーハ４の搬
送方向３０における先端の縁部がセンサ穴５の上方に来
ると、ウエーハ４が所定の停止位置に到達したことがフ
ァイバ光センサ１５によって検出されて、ファイバ光セ
ンサ１５から所定の信号が発せられる。この信号によっ
て、直線フィールドスルー１３、プッシュプルソレノイ
ド１７および応答性が速い制御機器１６が動作して、ウ
エーハ４の吸着、停止および上昇が行われる。これによ
り、所定の位置におけるウエーハ４の停止が高い精度で
行われる。While the wafer 4 is being transported, the electrostatic chuck 7 is always energized, and the wafer 4 decelerated by the electrostatic chuck 7 reaches a predetermined position, and the edge of the leading end of the wafer 4 in the transport direction 30 is moved. Comes above the sensor hole 5, the fiber optical sensor 15 detects that the wafer 4 has reached the predetermined stop position, and the fiber optical sensor 15 emits a predetermined signal. With this signal, the linear field through 13, the push-pull solenoid 17, and the control device 16 with high responsiveness are operated, and the wafer 4 is sucked, stopped and raised. Thereby, the stop of the wafer 4 at a predetermined position is performed with high accuracy.
【００１９】例えば、搬送速度０．１〜１ｍ／ｓで搬送
されて来たウエーハ４は、静電チャック７によって１／
３程度の速度に減速される。減速されたウエーハ４の先
端の縁部が上記センサ穴５の上方に到達すると、ファイ
バ光センサ１５によって０．０３ｍｍ程度の精度で検出
され、当該ファイバ光センサ１５からは信号が発せられ
る。この信号によって、ウエーハ４は静電チャック７に
吸着されて搬送は停止し、静電チャック４、直線フィー
ルドスルー１３、プッシュプルソレノイド１７および制
御器１６によって上方へ移される。この場合に用いた制
御機器の応答性を３ｍｓ以下とすることができ、ファイ
バ光センサ１５から信号が発せられた時点におけるウエ
ーハ４の位置から、０．２ｍｍ以内の位置にウエーハ４
が停止する。ウエーハ４のオリエンテイションフラット
が、搬送室２の端部（図１では上下端部）と平行に近く
なった場合は、ウエーハ４の先端の縁部の位置が若干変
わるが、この場合でも、０．２ｍｍ以内の精度でウエー
ハ４を停止させることができる。For example, the wafer 4 transported at a transport speed of 0.1 to 1 m / s is moved by the electrostatic chuck 7 to 1 /
The speed is reduced to about three. When the edge of the tip of the decelerated wafer 4 reaches above the sensor hole 5, it is detected by the fiber optical sensor 15 with an accuracy of about 0.03 mm, and a signal is emitted from the fiber optical sensor 15. In response to this signal, the wafer 4 is attracted to the electrostatic chuck 7 and the conveyance is stopped, and the wafer 4 is moved upward by the electrostatic chuck 4, the linear field through 13, the push-pull solenoid 17 and the controller 16. In this case, the responsiveness of the control device used can be set to 3 ms or less, and the position of the wafer 4 at a position within 0.2 mm from the position of the wafer 4 at the time when the signal is emitted from the fiber optical sensor 15 is obtained.
Stops. When the orientation flat of the wafer 4 is close to being parallel to the end of the transfer chamber 2 (the upper and lower ends in FIG. 1), the position of the edge of the tip of the wafer 4 is slightly changed. The wafer 4 can be stopped with an accuracy within .2 mm.
【００２０】上記従来の装置では、停止位置においてベ
ルヌイの定理などを用いてウエーハの停止を行っていた
ので、多量の気体が必要であり、真空中では使用できな
かった。また、ウエーハと搬送板の間の隙間が大きいた
め、静電チャックによってウエーハの減速と吸着を高い
精度で行うことは困難であり、搬送されてきたウエーハ
を高い精度で所定の位置に停止させることは困難であっ
た。In the above-mentioned conventional apparatus, the wafer is stopped at the stop position by using the Bernoulli's theorem, etc., so that a large amount of gas is required and cannot be used in a vacuum. In addition, since the gap between the wafer and the transfer plate is large, it is difficult to perform the deceleration and suction of the wafer with high accuracy by the electrostatic chuck, and it is difficult to stop the transferred wafer at a predetermined position with high accuracy. Met.
【００２１】しかし、本発明では、上記従来の装置とは
異なって、多量の気体は使用されず、しかもウエーハと
搬送板の間の隙間が極めて小さい。そのため、静電チャ
ックによる減速および吸着は極めて容易であり、上記従
来の装置よりはるかに高い精度でウエーハを所定の位置
に停止させることができる。However, in the present invention, unlike the above-mentioned conventional apparatus, a large amount of gas is not used, and the gap between the wafer and the transport plate is extremely small. Therefore, deceleration and suction by the electrostatic chuck are extremely easy, and the wafer can be stopped at a predetermined position with much higher accuracy than the above-described conventional apparatus.
【００２２】上記静電チャック７としては、例えば図３
に示した双極式のものを用いることができる。突起状の
点接触体１９がウエーハ４の裏面に点接触して、ウエー
ハ４が吸着されるので、静電吸着体２０がウエーハ４の
裏面全面に吸着することはなく、静電吸着体２０の全面
接触によってウエーハ４が汚染される恐れはない。上方
へ上げられたウエーハ４は、搬送機構９によって処理室
（図示せず）に搬送されて所定の処理に供される。As the electrostatic chuck 7, for example, FIG.
Can be used. Since the projecting point contact body 19 comes into point contact with the back surface of the wafer 4 and the wafer 4 is adsorbed, the electrostatic attraction body 20 does not adhere to the entire back surface of the wafer 4. There is no risk that the wafer 4 will be contaminated by full contact. The wafer 4 lifted upward is transported to a processing chamber (not shown) by the transport mechanism 9 and subjected to a predetermined process.
【００２３】上記搬送板２の上記ウエーハ４の搬送方向
３０に平行な一方および他方の端部（図１では上端部と
下端部）には、それぞれ上記搬送方向３０に搬送される
上記ウエーハ４の中心を結ぶ線に向かって傾斜した複数
の制御穴８が、上記搬送方向３０にそれぞれ形成されて
いる。At one end and the other end (upper and lower ends in FIG. 1) of the transfer plate 2 parallel to the transfer direction 30 of the wafer 4, the wafer 4 transferred in the transfer direction 30 is provided. A plurality of control holes 8 inclined toward a line connecting the centers are formed in the transport direction 30.
【００２４】すなわち、気体によるウエーハ４の浮上と
搬送を行うと、搬送中のウエーハ４が搬送方向３０から
外れて搬送室２の内部に衝突し、破損する可能性があ
る。しかし、本発明では上記複数の制御穴８から搬送の
中心線方向に気体が噴出される。そのため、搬送方向３
０から外れてウエーハ４の端部が制御穴８の上部に来た
場合は、制御穴８から中心線方向に噴出される気体によ
って、ウエーハ４は中心部方向に戻され、搬送室２の内
部との衝突は防止される。That is, when the wafer 4 is lifted and transported by the gas, the wafer 4 being transported may deviate from the transport direction 30 and collide with the inside of the transport chamber 2 to be damaged. However, in the present invention, gas is ejected from the plurality of control holes 8 in the direction of the center line of conveyance. Therefore, the transport direction 3
When the end of the wafer 4 comes out of the control hole 8 and comes out of the control hole 8, the gas ejected in the direction of the center line from the control hole 8 returns the wafer 4 toward the center, and the inside of the transfer chamber 2 is moved. Collision is prevented.
【００２５】上記制御穴８の直径を、上記制御穴８の吹
き出し部近傍における上記気体の平均自由行程にほぼ等
しくすれば好ましい結果が得られる。すなわち、大気圧
以上の圧力において粘性流を穴から噴出した場合は、図
４に示したように、気体は制御穴８から放射状気体噴出
流２２として噴出されるので、その力は弱い。そのた
め、ウエーハ４の端部が制御穴８の上部に到達しても、
ウエーハ４の下部の隙間１１から噴出穴３を介して噴出
される気体と相殺されてしまって、ウエーハ４を中心部
へ高い精度で戻すことはできず、搬送室２の端部に衝突
してしまう恐れがある。A preferable result can be obtained by making the diameter of the control hole 8 substantially equal to the mean free path of the gas in the vicinity of the blowout portion of the control hole 8. That is, when a viscous flow is ejected from the hole at a pressure higher than the atmospheric pressure, the gas is ejected from the control hole 8 as the radial gas ejected flow 22 as shown in FIG. Therefore, even if the end of the wafer 4 reaches the upper part of the control hole 8,
The gas ejected from the gap 11 below the wafer 4 through the ejection hole 3 is canceled out, so that the wafer 4 cannot be returned to the center with high accuracy, and collides with the end of the transfer chamber 2. There is a risk that it will.
【００２６】しかし、本発明では、上記気体制御穴８の
直径が、吹き出し部近傍における気体の平均自由行程に
近い値とされているため、制御穴８からの気体は分子線
状噴出流２１として放出される。そのため、上記放射状
気体噴出流２２の場合よりもはるかに力が大きく、ウエ
ーハ４が搬送方向３０から逸脱して、ウエーハ４の端部
が制御穴８の一部に到達した場合は、ウエーハ４を中心
部方向へ戻して搬送室２との衝突は防止される。例え
ば、制御穴８の直径ｄが１ｍｍ、長さが５ｍｍ、気体
（窒素）の供給圧力が７０Ｐａであるときの平均自由行
程λは０．０９８ｍｍなので、完全な分子線（ｄ≦λ）
にはならないが、粘性流の場合とは異なって、気体のビ
ームは分子線状となり、ウエーハ４と搬送室１の端部と
の衝突は効果的に防止される。However, in the present invention, the diameter of the gas control hole 8 is set to a value close to the mean free path of the gas in the vicinity of the blowout portion. Released. For this reason, the force is much larger than in the case of the radial gas jet 22, and when the wafer 4 deviates from the transport direction 30 and the end of the wafer 4 reaches a part of the control hole 8, the wafer 4 is removed. Returning toward the center, collision with the transfer chamber 2 is prevented. For example, when the diameter d of the control hole 8 is 1 mm, the length is 5 mm, and the supply pressure of gas (nitrogen) is 70 Pa, the mean free path λ is 0.098 mm, so that a complete molecular beam (d ≦ λ)
However, unlike the case of the viscous flow, the gas beam becomes a molecular beam, and the collision between the wafer 4 and the end of the transfer chamber 1 is effectively prevented.
【００２７】ウエーハ上に付着したダストなど微粒子を
除去することは重要である。そのため、本発明のウエー
ハ搬送装置は、上記ウエーハに電子線若しくは紫外線を
照射する手段と、上記ウエーハ上のチャージアップした
微粒子を吸着する静電吸着手段を具備することができ
る。すなわち、図５に示したように、二次電子線源また
は紫外線源２４を用いて、搬送室１の真空室１０内のウ
エーハ４に電子線や紫外線を照射し、さらに、高圧電源
２３を用いて１０ｋＶ以下の電位を静電吸着機構２６に
印加して、ウエーハ４の表面に付着してチャージアップ
した微粒子を、この静電吸着機構２６に吸着させて除去
する。ファン・デル・ワールス力や静電力による付着力
以上の静電位を印加することにより、上記微粒子は効果
的に除去される。真空室１０内のガス圧力を、例えば６
×１０−２Ｐａと高真空に保てば、放電が起こる恐れは
ない。二次電子線源／紫外線源２４と静電吸着機構２６
の間には、図５に示したように、干渉を防ぐためのシー
ルド２５を設けるのが好ましい。It is important to remove fine particles such as dust adhering to the wafer. Therefore, the wafer transfer apparatus of the present invention can include a means for irradiating the wafer with an electron beam or ultraviolet rays, and an electrostatic suction means for suctioning charged-up fine particles on the wafer. That is, as shown in FIG. 5, the wafer 4 in the vacuum chamber 10 of the transfer chamber 1 is irradiated with an electron beam or an ultraviolet ray by using a secondary electron beam source or an ultraviolet ray source 24, and further, by using a high voltage power supply 23. By applying a potential of 10 kV or less to the electrostatic attraction mechanism 26, the fine particles adhering to the surface of the wafer 4 and charged up are absorbed by the electrostatic attraction mechanism 26 and removed. By applying an electrostatic potential higher than the adhesion force due to van der Waals force or electrostatic force, the fine particles are effectively removed. The gas pressure in the vacuum chamber 10 is set to, for example, 6
If a high vacuum of × 10 −2 Pa is maintained, there is no possibility that discharge will occur. Secondary electron beam source / ultraviolet ray source 24 and electrostatic adsorption mechanism 26
As shown in FIG. 5, it is preferable to provide a shield 25 for preventing interference.
【００２８】さらに本発明のウエーハ搬送装置は、上記
搬送室内の所定の位置に配置された、気体噴出穴を有す
る円板状気体噴出板と、当該円板状気体噴出板を回転お
よび上下させる手段を具備することができる。The wafer transfer apparatus of the present invention further comprises a disc-shaped gas ejection plate having a gas ejection hole, which is disposed at a predetermined position in the transfer chamber, and means for rotating and moving the disc-shaped gas ejection plate up and down. Can be provided.
【００２９】すなわち、半導体装置の生産においてフロ
ーラインを形成する場合、ウエーハ４の方向転換と上下
移動は不可欠である。そのための手段の一例を図６を用
いて説明する。所定の位置に停止されたウエーハ４は、
噴出穴３が形成された円板状の気体噴出板２７上に置か
れ、回転・直線フィールドスルー２８および回転モータ
２９を用いて所望の方向へ向けられ、さらに上下に移動
される。次に、上記気体噴出板２７に形成された気体噴
出穴３から気体を噴出させて、ウエーハ４を所望処理装
置へ搬送する。このようにして、高真空下におけるウエ
ーハ４の方向転換と移動を容易に行うことができる。That is, when a flow line is formed in the production of a semiconductor device, the direction change and the vertical movement of the wafer 4 are indispensable. An example of the means for that will be described with reference to FIG. The wafer 4 stopped at a predetermined position,
It is placed on a disk-shaped gas ejection plate 27 in which ejection holes 3 are formed, is directed in a desired direction using a rotary / straight field through 28 and a rotary motor 29, and is further moved up and down. Next, the gas is ejected from the gas ejection holes 3 formed in the gas ejection plate 27, and the wafer 4 is transported to a desired processing apparatus. In this way, the direction change and movement of the wafer 4 under high vacuum can be easily performed.
【００３０】[0030]
【発明の実施の形態】実施例１ 本実施例は、図１、２に示した装置を用いて、高い真空
度におけるウエーハの搬送を行った例である。重さ５６
ｇの８″ウエーハ４を搬送板２の上に置き、浮上のため
の面積（ウエーハ４の下に溜まった気体と接するウエー
ハ４の下面の面積）を１７７ｃｍ２、ウエーハ４の下面
に印加される窒素の圧力を７０Ｐａとした場合、ウエー
ハ４と搬送板２との隙間１１は０．０１８ｍｍとなり、
浮上圧力１２３ｇｆが得られた。このときの上記隙間１
１に導入された窒素の、２９３°Ｋにおける平均自由行
程λ＝９．３×１０−５ｍ、クヌーセン数Ｋｎ＝λ／ｈ
＝５．２（ｈは隙間１１の大きさ）となり、分子流が形
成されていることが確認された（Ｋｎ〈０．００５のと
きは粘性流、５〉Ｋｎ〉０．００５のときは遷移流、Ｋ
ｎ〉５のときは分子流に、それぞれなる）。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 This embodiment is an example in which a wafer is transported at a high degree of vacuum using the apparatus shown in FIGS. Weight 56
g of 8 "wafer 4 placed on the carrier plate 2, is applied area (the area of the lower surface of the wafer 4 in contact with the accumulated gas under the wafer 4) in the lower surface of 177cm 2, wafer 4 for levitation When the pressure of nitrogen is 70 Pa, the gap 11 between the wafer 4 and the transfer plate 2 is 0.018 mm,
A floating pressure of 123 gf was obtained. The gap 1 at this time
The nitrogen introduced into 1, the mean free path lambda = 9.3 × in 293 ° K 10 -5 m, Knudsen number K n = λ / h
= 5.2 (h is the size of the gap 11), and it was confirmed that a molecular flow was formed (viscous flow when K n <0.005, and when 5> K n > 0.005). Is the transition flow, K
When n > 5, it becomes a molecular flow, respectively).
【００３１】ウエーハ４の搬送の推力は０．５８ｇｆで
あり、搬送速度は０．１ｍ／ｓであった。加速度は０．
１ｍ／ｓ２と推定された。気体（窒素）の流量は流量制
御器１４によって１．２×１０−３Ｐａ・ｍ３／ｓに調
節した。排気はターボ分子ポンプ１８を用いて行い、排
気速度は２００ｌ／ｓとした。The transfer thrust of the wafer 4 was 0.58 gf, and the transfer speed was 0.1 m / s. The acceleration is 0.
It was estimated to 1m / s 2. The flow rate of the gas (nitrogen) was adjusted to 1.2 × 10 −3 Pa · m 3 / s by the flow controller 14. The evacuation was performed using a turbo molecular pump 18, and the evacuation speed was 200 l / s.
【００３２】この場合、ウエーハ４の搬送中に搬送室１
の真空度は６×１０−２Ｐａに劣化したが、窒素の供給
を停止すると、真空度は速やかに１×１０−４Ｐａに回
復し、ウエーハ４を搬送室１からスリットバルブ（図示
せず）を介して搬送した処理室（図示せず）の真空度
も、速やかに１×１０−６Ｐａに回復して、以降の処理
を支障無く行うことができた。In this case, during the transfer of the wafer 4, the transfer chamber 1
Was reduced to 6 × 10 −2 Pa, but when the supply of nitrogen was stopped, the vacuum was quickly restored to 1 × 10 −4 Pa, and the wafer 4 was transferred from the transfer chamber 1 to a slit valve (not shown). ), The degree of vacuum in the processing chamber (not shown) was quickly restored to 1 × 10 −6 Pa, and the subsequent processing could be performed without any trouble.
【００３３】実施例２ 本実施例は、搬送されてきたウエーハを、所定位置で停
止させて上部へ移した例である。重さ５６ｇ、直径８″
のウエーハ４を、速度０．１ｍ／ｓで搬送した場合の慣
性力は約０．６ｇｆであるが、上記速度で搬送されてき
たこのウエーハ４の速度を、図３に示した吸着力が約１
ｇｆの静電チャック７によって、０．０３ｍ／ｓに減速
した。Embodiment 2 This embodiment is an example in which a conveyed wafer is stopped at a predetermined position and moved upward. Weight 56g, diameter 8 "
The inertia force when the wafer 4 is conveyed at a speed of 0.1 m / s is about 0.6 gf, and the suction force shown in FIG. 1
The speed was reduced to 0.03 m / s by the gf electrostatic chuck 7.
【００３４】減速されたウエーハ４の位置をファイバ光
センサ５によって検出した後、直ちに制御系１６を動作
させ、プッシュプルソレノイド１７によって、静電チャ
ック７を静電チャック７’に示した位置まで上昇させ、
その上のウエーハ４をウエーハ４′の位置に上昇させ
た。このときのファイバ光センサ５による検出から制御
系１６の応答までに要した時間は０．１ｍｓ、プッシュ
プルソレノイド１７の応答までの時間は２ｍｓであっ
た。合計２．１ｍｓの間に、ウエーハ４が搬送方向に動
いた距離は検出位置（センサ穴５）から０．１３ｍｍで
あり、本発明によって目標値である０．２ｍｍより十分
小さい位置に停止させることができ、実用に供し得るこ
とが確認された。After the position of the decelerated wafer 4 is detected by the fiber optical sensor 5, the control system 16 is operated immediately, and the electrostatic chuck 7 is raised by the push-pull solenoid 17 to the position indicated by the electrostatic chuck 7 '. Let
The wafer 4 thereon was raised to the position of the wafer 4 '. At this time, the time required from the detection by the fiber optical sensor 5 to the response of the control system 16 was 0.1 ms, and the time from the response of the push-pull solenoid 17 was 2 ms. During a total time of 2.1 ms, the distance that the wafer 4 has moved in the transport direction is 0.13 mm from the detection position (sensor hole 5), and is stopped at a position sufficiently smaller than the target value of 0.2 mm according to the present invention. And it was confirmed that it could be put to practical use.
【００３５】[0035]
【発明の効果】上記説明から明らかなように、本発明に
よれば、導入されるガス量は流量制御器によって極度に
少なくされ、かつ高真空ポンプによって排気されるた
め、搬送室内を高い真空度にするのは容易である。その
ため、マルチチャンネル型処理装置を構成する各処理室
および各種処理装置間の、高い真空度中におけるウエー
ハの搬送が可能になり、バッファ室を用いることなし
に、各種真空処理室および各種真空処理装置と直接接続
することができる。また、ウエーハと搬送板の間の隙間
が小さいため、搬送されてきたウエーハを静電チャック
によって減速および吸着させることは容易であり、従来
よりはるかに高い精度で、ウエーハを所定の位置に停止
させて、次の処理に供することができる。したがって、
将来、すべてのプロセス処理を高い真空度の雰囲気中で
行う場合も、本発明によって容易にウエーハを各処理室
あるいは各処理装置間を搬送することが可能である。As is apparent from the above description, according to the present invention, the amount of gas to be introduced is extremely reduced by the flow controller and exhausted by the high vacuum pump, so that the transfer chamber has a high degree of vacuum. It's easy to do. Therefore, it is possible to transfer a wafer in a high degree of vacuum between the processing chambers and various processing apparatuses constituting the multi-channel processing apparatus, and to use various vacuum processing chambers and various vacuum processing apparatuses without using a buffer chamber. Can be connected directly. In addition, since the gap between the wafer and the transfer plate is small, it is easy to decelerate and suck the transferred wafer by the electrostatic chuck, and stop the wafer at a predetermined position with much higher accuracy than before, The following processing can be provided. Therefore,
According to the present invention, the wafer can be easily transferred between the processing chambers or between the processing apparatuses even when all the processing is performed in a high vacuum atmosphere in the future.
【図１】本発明の平面構造の一例を説明するための図。FIG. 1 is a diagram illustrating an example of a planar structure according to the present invention.
【図２】本発明の断面構造の一例を説明するための図。FIG. 2 is a diagram illustrating an example of a cross-sectional structure of the present invention.
【図３】本発明で用いられる静電チャックの一例を示す
断面図。FIG. 3 is a sectional view showing an example of an electrostatic chuck used in the present invention.
【図４】制御穴の作用を説明するための断面図。FIG. 4 is a cross-sectional view for explaining the operation of a control hole.
【図５】静電吸着によるダストの除去を説明するための
断面図。FIG. 5 is a cross-sectional view illustrating removal of dust by electrostatic attraction.
【図６】ウエーハの回転および上下移動を説明するため
の断面図。FIG. 6 is a cross-sectional view for explaining rotation and vertical movement of the wafer.
１…搬送室、２…搬送板、３…噴出穴、４、４’…ウエ
ーハ、５…センサ穴、６…点接触面、７、７’…静電チ
ャック、８…制御穴、９…搬送機構、１０…真空室、１
１…隙間、１２…気体供給室、１３…直線フィールドス
ルー、１４…流量制御器、１５…光ファイバセンサ、１
６…制御器、１７…プッシュプルソレノイド、１８…タ
ーボ分子ポンプ、１９…点接触体、２０…静電吸着体、
２１…分子線状気体噴出流、２２…放射状気体噴出流、
２３…高圧電源、２４…二次電子源／紫外線源、２５…
シールド、２６…静電吸着機構、２７…気体噴出板、２
８…回転・直線フィールドスルー、２９…回転モータ、
３０…搬送方向。DESCRIPTION OF SYMBOLS 1 ... Transfer chamber, 2 ... Transfer plate, 3 ... Ejection hole, 4 and 4 '... Wafer, 5 ... Sensor hole, 6 ... Point contact surface, 7, 7' ... Electrostatic chuck, 8 ... Control hole, 9 ... Transport Mechanism, 10: vacuum chamber, 1
DESCRIPTION OF SYMBOLS 1 ... Gap, 12 ... Gas supply chamber, 13 ... Straight field through, 14 ... Flow controller, 15 ... Optical fiber sensor, 1
6: controller, 17: push-pull solenoid, 18: turbo molecular pump, 19: point contact, 20: electrostatic adsorber,
21: molecular linear gas jet, 22: radial gas jet,
23 ... High voltage power supply, 24 ... Secondary electron source / ultraviolet light source, 25 ...
Shield, 26: electrostatic chuck mechanism, 27: gas ejection plate, 2
8 ... Rotating / straight field through, 29 ... Rotating motor,
30 ... Transport direction.
Claims (10)
るための搬送室と、当該搬送室内に設けられた上記ウエ
ーハをその上に保持する搬送板と、上記ウエーハを搬送
すべき方向に傾斜して上記搬送板に設けられた複数の噴
出穴と、当該噴出穴に下方から気体を供給して上記ウエ
ーハの浮上と搬送を行う手段と、上記搬送室内を排気す
る手段を少なくとも具備したウエーハ搬送装置におい
て、上記気体の流量を制御して上記搬送板とウエーハの
間の隙間を流れる上記気体の流れを分子流若しくは遷移
流とする手段を具備することを特徴とするウエーハ搬送
装置。1. A transfer chamber for transferring a wafer to be processed to a desired place, a transfer plate provided in the transfer chamber for holding the wafer thereon, and a tilt in a direction in which the wafer is to be transferred. And a plurality of ejection holes provided in the conveyance plate, means for supplying gas from below to the ejection holes to float and convey the wafer, and means for exhausting the inside of the conveyance chamber. A wafer transfer device, comprising: means for controlling the flow rate of the gas to make the flow of the gas flowing through the gap between the transfer plate and the wafer into a molecular flow or a transition flow.
ａ以上、７００Ｐａ以下であることを特徴とする請求項
１に記載のウエーハ搬送装置。2. The pressure of gas supplied to said gap is 70 P
The wafer transfer device according to claim 1, wherein the pressure is not less than a and not more than 700 Pa.
するための手段と、当該位置を検出するための手段から
の信号にもとづいて上記ウエーハを上方へ移す手段を具
備することを特徴とする請求項１若しくは２に記載のウ
エーハ搬送装置。3. The apparatus according to claim 1, further comprising: means for detecting the position of the conveyed wafer; and means for moving the wafer upward based on a signal from the means for detecting the position. The wafer transfer device according to claim 1.
は、上記搬送板の所定の位置に形成されたセンサ穴およ
び当該センサ穴の下方に配置された光センサを有するこ
とを特徴とする請求項３に記載のウエーハ搬送装置。4. The apparatus according to claim 1, wherein the means for detecting the position of the wafer includes a sensor hole formed at a predetermined position of the transfer plate and an optical sensor disposed below the sensor hole. Item 4. The wafer transfer device according to item 3.
段を具備し、当該ウエーハを減速する手段によって減速
された上記ウエーハの位置が、上記ウエーハの位置を検
出するための手段によって検出されることを特徴とする
請求項３若しくは４に記載のウエーハ搬送装置。5. The apparatus according to claim 1, further comprising: means for decelerating the conveyed wafer, wherein the position of the wafer decelerated by the means for decelerating the wafer is detected by means for detecting the position of the wafer. The wafer transfer device according to claim 3 or 4, wherein:
クであることを特徴とする請求項５に記載のウエーハ搬
送装置。6. The wafer transfer device according to claim 5, wherein the means for decelerating the wafer is an electrostatic chuck.
行な一方および他方の端部には、それぞれ上記搬送方向
に搬送される上記ウエーハの中心を結ぶ線に向かって傾
斜した複数の制御穴が、上記搬送方向にそれぞれ形成さ
れていることを特徴とする請求項１から６のいずれか一
に記載のウエーハ搬送装置。7. A plurality of control holes which are inclined toward a line connecting the centers of the wafers conveyed in the conveyance direction, respectively, at one and the other ends of the conveyance plate parallel to the wafer conveyance direction. The wafer transfer device according to any one of claims 1 to 6, wherein are formed in the transfer direction, respectively.
し部近傍における上記気体の平均自由行程にほぼ等しい
ことを特徴とする請求項７に記載のウエーハ搬送装置。8. The wafer transfer device according to claim 7, wherein the diameter of the control hole is substantially equal to the mean free path of the gas in the vicinity of the outlet of the control hole.
射する手段と、上記ウエーハ上のチャージアップした微
粒子を吸着する静電吸着手段を具備することを特徴とす
る請求項１から８のいずれか一に記載のウエーハ搬送装
置。9. The apparatus according to claim 1, further comprising: means for irradiating said wafer with an electron beam or ultraviolet rays; and electrostatic attraction means for adsorbing charged fine particles on said wafer. 2. The wafer transfer device according to 1.
た、気体噴出穴を有する気体噴出板と、当該気体噴出板
を回転および上下させる手段を具備することを特徴とす
る請求項１から９のいずれか一に記載のウエーハ搬出装
置。10. A gas ejection plate having a gas ejection hole disposed at a predetermined position in the transfer chamber, and means for rotating and moving the gas ejection plate up and down. The wafer unloading device according to any one of the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37660699A JP4108242B2 (en) | 1999-12-15 | 1999-12-15 | Transport device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37660699A JP4108242B2 (en) | 1999-12-15 | 1999-12-15 | Transport device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001176950A true JP2001176950A (en) | 2001-06-29 |
| JP4108242B2 JP4108242B2 (en) | 2008-06-25 |
Family
ID=18507433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP37660699A Expired - Fee Related JP4108242B2 (en) | 1999-12-15 | 1999-12-15 | Transport device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4108242B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005074020A1 (en) * | 2004-01-30 | 2005-08-11 | Sharp Kabushiki Kaisha | Semiconductor manufacturing apparatus and semiconductor manufacturing method using same |
| JP2006264939A (en) * | 2005-03-25 | 2006-10-05 | Tokyo Electron Ltd | Substrate conveying system and substrate conveying method |
| JP2010159164A (en) * | 2008-12-12 | 2010-07-22 | Tokyo Electron Ltd | Vacuum processing device, vacuum processing system and processing method |
| JP2011210971A (en) * | 2010-03-30 | 2011-10-20 | Dainippon Screen Mfg Co Ltd | Device and method for processing substrate |
| JP2012250834A (en) * | 2011-06-06 | 2012-12-20 | Toshiba Elevator Co Ltd | Passenger conveyer |
| WO2017122763A1 (en) | 2016-01-15 | 2017-07-20 | 株式会社ナノテム | Contactless carrier device and contactless carrier system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0651920U (en) * | 1992-12-16 | 1994-07-15 | ミツミ電機株式会社 | Trackball coordinate information input device |
-
1999
- 1999-12-15 JP JP37660699A patent/JP4108242B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005074020A1 (en) * | 2004-01-30 | 2005-08-11 | Sharp Kabushiki Kaisha | Semiconductor manufacturing apparatus and semiconductor manufacturing method using same |
| JPWO2005074020A1 (en) * | 2004-01-30 | 2007-09-13 | シャープ株式会社 | Semiconductor manufacturing apparatus and semiconductor manufacturing method using the same |
| JP4542043B2 (en) * | 2004-01-30 | 2010-09-08 | シャープ株式会社 | Semiconductor manufacturing apparatus and semiconductor manufacturing method using the same |
| US7918939B2 (en) | 2004-01-30 | 2011-04-05 | Sharp Kabushiki Kaisha | Semiconductor manufacturing apparatus and semiconductor manufacturing method using the same |
| JP2006264939A (en) * | 2005-03-25 | 2006-10-05 | Tokyo Electron Ltd | Substrate conveying system and substrate conveying method |
| JP2010159164A (en) * | 2008-12-12 | 2010-07-22 | Tokyo Electron Ltd | Vacuum processing device, vacuum processing system and processing method |
| JP2011210971A (en) * | 2010-03-30 | 2011-10-20 | Dainippon Screen Mfg Co Ltd | Device and method for processing substrate |
| JP2012250834A (en) * | 2011-06-06 | 2012-12-20 | Toshiba Elevator Co Ltd | Passenger conveyer |
| WO2017122763A1 (en) | 2016-01-15 | 2017-07-20 | 株式会社ナノテム | Contactless carrier device and contactless carrier system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4108242B2 (en) | 2008-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3425592B2 (en) | Processing equipment | |
| WO2011046129A1 (en) | Apparatus for holding thin-board-like material and method for holding thin-board-like material | |
| CN101443899B (en) | Substrate conveyance device and vertical heat treatment equipment | |
| JP4869612B2 (en) | Substrate transport system and substrate transport method | |
| WO2000068118A1 (en) | Transfer system for lcd glass substrate | |
| JP2008505041A (en) | Gas bearing substrate loading mechanism | |
| JP2007165644A (en) | Vacuum processing apparatus and strip-like air flow forming device | |
| KR100248562B1 (en) | Vacuum processing apparatus | |
| WO1992009103A1 (en) | Device and method for carrying thin plate-like substrate | |
| JP4275769B2 (en) | Substrate transfer device | |
| JP2012076877A (en) | Workpiece transport method and workpiece transport apparatus | |
| JP2004266242A (en) | System for transporting substrate carrier | |
| JP2001176950A (en) | Wafer conveyor | |
| JP2007149960A (en) | Plasma processor | |
| JP3162144B2 (en) | Sheet-like substrate transfer device | |
| WO2000003428A1 (en) | Substrate transfer device and operating method thereof | |
| JP2000159342A (en) | Conveying apparatus for plate-shaped member | |
| JP2000062951A (en) | Conveying apparatus | |
| JPH06247507A (en) | Conveyer arm | |
| JPH07122616A (en) | Semiconductor production system | |
| KR100792691B1 (en) | Wafer conveying machine | |
| JPH07176593A (en) | Conveyer | |
| JP2873761B2 (en) | Semiconductor manufacturing equipment | |
| JPH01127538A (en) | Delivering device for board like object | |
| JP4893481B2 (en) | Silicon wafer transfer device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Effective date: 20050629 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
| RD02 | Notification of acceptance of power of attorney |
Effective date: 20050629 Free format text: JAPANESE INTERMEDIATE CODE: A7422 |
|
| RD03 | Notification of appointment of power of attorney |
Effective date: 20050629 Free format text: JAPANESE INTERMEDIATE CODE: A7423 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071212 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20071218 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080214 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080311 |
|
| A61 | First payment of annual fees (during grant procedure) |
Effective date: 20080402 Free format text: JAPANESE INTERMEDIATE CODE: A61 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110411 Year of fee payment: 3 |
|
| R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 4 Free format text: PAYMENT UNTIL: 20120411 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130411 Year of fee payment: 5 |
|
| LAPS | Cancellation because of no payment of annual fees |