JP2001170494A - Method of activating photocatalyst layer - Google Patents
Method of activating photocatalyst layerInfo
- Publication number
- JP2001170494A JP2001170494A JP35438299A JP35438299A JP2001170494A JP 2001170494 A JP2001170494 A JP 2001170494A JP 35438299 A JP35438299 A JP 35438299A JP 35438299 A JP35438299 A JP 35438299A JP 2001170494 A JP2001170494 A JP 2001170494A
- Authority
- JP
- Japan
- Prior art keywords
- photocatalyst layer
- photocatalyst
- ion bombardment
- substrate
- activating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011941 photocatalyst Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000003213 activating effect Effects 0.000 title claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000010849 ion bombardment Methods 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 18
- 239000013078 crystal Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- -1 argon ion Chemical class 0.000 description 7
- 238000006864 oxidative decomposition reaction Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 6
- SNICXCGAKADSCV-JTQLQIEISA-N (-)-Nicotine Chemical compound CN1CCC[C@H]1C1=CC=CN=C1 SNICXCGAKADSCV-JTQLQIEISA-N 0.000 description 5
- 229960002715 nicotine Drugs 0.000 description 5
- SNICXCGAKADSCV-UHFFFAOYSA-N nicotine Natural products CN1CCCC1C1=CC=CN=C1 SNICXCGAKADSCV-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000001699 photocatalysis Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、基材に製膜した
光触媒層の活性化方法に関する。[0001] The present invention relates to a method for activating a photocatalytic layer formed on a substrate.
【０００２】[0002]
【従来の技術】従来から、光触媒の活性機能を高める方
法として、光触媒にＳｉ（シリコン）やＣｒを始とする
他元素種をドーピングする方法等の種々の実験的試みが
行われている。2. Description of the Related Art Hitherto, various experimental attempts have been made as a method of enhancing the active function of a photocatalyst, such as a method of doping a photocatalyst with another element such as Si (silicon) or Cr.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、他元素
をドーピングする場合、ドーピングの量（ＴｉＯ2 との
元素比率）のコントロールが困難であったり、再現性の
ある効果が得られない場合がある。また、特開平８−５
２８２９０号公報に開示されているように、Ｓｉをドー
ピングすることにより超親水性の機能は上げることが可
能であるが、逆に酸化分解活性を失ってしまうという弊
害があった。However, when doping with another element, it may be difficult to control the amount of doping (element ratio with TiO 2 ), or it may not be possible to obtain a reproducible effect. Further, Japanese Patent Application Laid-Open No.
As disclosed in Japanese Patent No. 28290, the super-hydrophilic function can be improved by doping with Si, but there is a disadvantage that the oxidative decomposition activity is lost.
【０００４】そこで、この発明は、かかる課題を解決
し、乾式法によって製膜した光触媒層の機能を容易な方
法にて向上させる方法を提供することを目的とする。Accordingly, an object of the present invention is to solve the above-mentioned problem and to provide a method for improving the function of a photocatalyst layer formed by a dry method by an easy method.
【０００５】[0005]
【課題を解決するための手段】上記の課題を解決するた
め、この発明は、基材上に製膜した光触媒層をイオンボ
ンバード処理したのである。According to the present invention, in order to solve the above-mentioned problems, a photocatalyst layer formed on a substrate is subjected to an ion bombardment treatment.
【０００６】ガラス、樹脂等の基材表面上に乾式法（ス
パッタリング）により製膜した光触媒層は、自然光、ま
たは照明光中に含まれる波長３００ｎｍ〜４００ｎｍの
紫外光をその励起光として有機物酸化分解活性及び超親
水性といった光触媒の持つ活性機能を有する。このと
き、アルゴンイオンや酸素イオンボンバード処理によっ
て光触媒層表面を凹凸に粗す。これにより、有機物等の
光触媒表面ヘの接触表面積を大きくしたり、光触媒層表
面近傍における光触媒を構成する金属と酸素からなる結
晶中に格子欠陥（原子欠損）を生じさせたり、光触媒表
面近傍における結晶構造をアモルフアス及びルチル型構
造からアナターゼ型構造へと転移させることにより、有
機物酸化分解活性及び超親水性といった光触媒の持つ活
性機能をより活性化させることができる。A photocatalytic layer formed on a substrate surface of glass, resin, or the like by a dry method (sputtering) oxidizes and decomposes organic matter using natural light or ultraviolet light having a wavelength of 300 to 400 nm contained in illumination light as excitation light. It has the active function of the photocatalyst such as activity and superhydrophilicity. At this time, the surface of the photocatalytic layer is roughened by argon ion or oxygen ion bombardment. As a result, the contact surface area of the organic substance or the like with the photocatalyst surface is increased, lattice defects (atomic defects) are generated in the crystal composed of metal and oxygen constituting the photocatalyst near the photocatalyst layer surface, or the crystal near the photocatalyst surface is generated. By transferring the structure from the amorphous and rutile structure to the anatase structure, the active functions of the photocatalyst such as organic oxidative decomposition activity and superhydrophilicity can be more activated.
【０００７】[0007]
【発明の実施の形態】以下、この発明の実施形態を図面
を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【０００８】この発明にかかる光触媒層の活性化方法
は、基材上に製膜した光触媒層をイオンボンバード処理
することに行われる。The method for activating a photocatalyst layer according to the present invention is performed by subjecting a photocatalyst layer formed on a substrate to an ion bombardment treatment.
【０００９】上記基材とは、光触媒層を製膜するための
ものであり、ガラス、樹脂等が一般的に使用される。The above substrate is for forming a photocatalyst layer, and glass, resin and the like are generally used.
【００１０】上記光触媒とは、自然光、または照明光中
に含まれる波長３００ｎｍ〜４００ｎｍの紫外光をその
励起光として、有機物酸化分解活性及び超親水性といっ
た光触媒の持つ活性機能を有する触媒である。この光触
媒の例としては、酸化チタンがあげられる。The above-mentioned photocatalyst is a catalyst having an activity function of a photocatalyst such as organic oxidative decomposition activity and superhydrophilicity, using natural light or ultraviolet light having a wavelength of 300 nm to 400 nm contained in illumination light as its excitation light. An example of the photocatalyst is titanium oxide.
【００１１】この光触媒は、乾式法によって、上記基材
上に製膜される。この乾式法としては、スパッタリング
が例としてあげられる。This photocatalyst is formed on the above substrate by a dry method. An example of the dry method is sputtering.
【００１２】上記イオンボンバード処理とは、アルゴン
イオンや酸素イオンを用いて光触媒層表面を凹凸に粗す
処理をいう。このイオンボンバード処理は、例えば、図
１に示す装置を用いて行うことができる。これは、開閉
自在の真空チャンバ１の一面に陰極２を設け、その対向
する面に基材１１を保持するパレット３が設けられ、こ
のパレット３をアースした装置である。The ion bombardment treatment is a treatment for roughening the surface of the photocatalyst layer by using argon ions or oxygen ions. This ion bombardment treatment can be performed using, for example, the apparatus shown in FIG. This is an apparatus in which a cathode 2 is provided on one surface of an openable and closable vacuum chamber 1 and a pallet 3 for holding a base material 11 is provided on the opposite surface, and the pallet 3 is grounded.
【００１３】イオンボンバード処理の方法は、まず、エ
アシリンダ４によって真空チャンバ１を開き、表面に光
触媒層１２を形成した基材１１を、上記光触媒層１２が
外側に向くように、パレット３に取り付ける。そして、
真空チャンバ１を閉じ、排気管５から真空チャンバ１内
の空気を排気し、真空チャンバ１内の圧力を１０〜５０
ｍＴｏｒｒとする。In the ion bombarding method, first, the vacuum chamber 1 is opened by the air cylinder 4 and the substrate 11 having the photocatalyst layer 12 formed on the surface is mounted on the pallet 3 so that the photocatalyst layer 12 faces outward. . And
The vacuum chamber 1 is closed, the air in the vacuum chamber 1 is exhausted from the exhaust pipe 5, and the pressure in the vacuum chamber 1 is reduced to 10 to 50.
mTorr.
【００１４】次いで、パレット３を所定回転数で回転さ
せ、ガス流入管６から所定流量のアルゴンガス又は酸素
ガスを真空チャンバ１内に流す。次に、パレット３側を
アースして、ステンレススチールからなる陰極２に所定
電圧をかける。このとき、真空チャンバ１と陰極２及び
パレット３とは絶縁層７によって絶縁されている。上記
の所定電圧をかけることにより、真空チャンバ１内でプ
ラズマ放電が生起し、アルゴンプラズマ、すなわちアル
ゴンイオン（Ａｒ+ ）又は酸素プラズマ、すなわち酸素
イオン（Ｏ+ ）が発生する。このプラズマは、電圧によ
って基材１１に引き寄せられ、光触媒層１２に衝突す
る。これにより、光触媒層１２が活性化すると考えられ
る。Next, the pallet 3 is rotated at a predetermined number of revolutions, and a predetermined flow rate of argon gas or oxygen gas flows from the gas inlet pipe 6 into the vacuum chamber 1. Next, the pallet 3 side is grounded, and a predetermined voltage is applied to the cathode 2 made of stainless steel. At this time, the vacuum chamber 1 is insulated from the cathode 2 and the pallet 3 by the insulating layer 7. By applying the above-mentioned predetermined voltage, plasma discharge occurs in the vacuum chamber 1, and argon plasma, that is, argon ion (Ar + ) or oxygen plasma, that is, oxygen ion (O + ) is generated. This plasma is attracted to the substrate 11 by the voltage and collides with the photocatalyst layer 12. Thereby, it is considered that the photocatalyst layer 12 is activated.
【００１５】このとき、陰極２として金属イオンの少な
いステンレススチールを使用するので、金属イオンの発
生が生じにくい。これは、金属イオンが発生すると、光
触媒層１２に衝突した際に金属イオンが付着し、却って
光触媒層１２の活性を低下させると考えられるからであ
る。これに対し、アルゴンイオンや酸素イオンは、光触
媒層１２への付着が生じないため、付着による阻害効果
が少ないと考えられる。At this time, since stainless steel having a small amount of metal ions is used as the cathode 2, generation of metal ions hardly occurs. This is because, when the metal ions are generated, the metal ions adhere to the photocatalyst layer 12 when the metal ions collide with the photocatalyst layer 12, and the activity of the photocatalyst layer 12 is rather reduced. On the other hand, since argon ions and oxygen ions do not adhere to the photocatalyst layer 12, it is considered that the effect of the adherence is small.
【００１６】上記イオンボンバード処理の条件は、パレ
ット回転数１０〜３０ｒｐｍ、電圧１００〜６００Ｖ、
圧力１０〜５０ｍＴｏｒｒ、ガス流量１０〜５０ｓｃｃ
ｍ、処理時間１０〜６０分がよい。なお、ガス流量の単
位の「ｓｃｃｍ」は、常温、常圧における流量（standa
rd cc per minuit）を示す。The conditions of the ion bombardment treatment are as follows: pallet rotation speed 10 to 30 rpm, voltage 100 to 600 V,
Pressure 10-50 mTorr, gas flow 10-50 scc
m, the processing time is preferably 10 to 60 minutes. In addition, the unit of gas flow rate “sccm” is the flow rate (standa
rd cc per minuit).
【００１７】ルチル、及びアナターゼ結晶構造はＯ2-が
細密充填し、その時間にＴｉ4+等の光触媒を構成する金
属イオンが入っている構造をしており、正方晶系の結晶
構造を持つ。ユニットセルの体積はルチル型で６２．４
（Å3 ）、アナターゼ型で１３６．１（Å3 ）とされて
いる。格子定数はルチル型ではａ＝４．５９３（Å），
Ｃ＝２．９５９（Å）、同じくアナターゼ型ではａ＝
３．７８５（Å），Ｃ＝９．５１４（Å）となってい
る。The rutile and anatase crystal structures have a structure in which O 2− is densely packed and metal ions constituting a photocatalyst such as Ti 4+ enter at that time, and have a tetragonal crystal structure. . The unit cell volume is 62.4 in rutile type.
(Å 3), it is in anatase 136.1 and (Å 3). The lattice constant is a = 4.593 (Å) for the rutile type,
C = 2.959 (Å), and a =
3.785 (Å) and C = 9.514 (Å).
【００１８】このため、上記の条件でイオンボンバード
処理をすることにより、結晶格子約１個分に相当する表
面粗さを生成させ、付着有機物の接触表面積を最大にす
ることができ、従って分解活性を最大にすることができ
る。これにより、上記光触媒層の持つ有機物酸化分解活
性及び超親水性等の活性機能をより活性化させることが
できる。For this reason, by performing ion bombardment treatment under the above conditions, surface roughness equivalent to about one crystal lattice can be generated, and the contact surface area of the adhered organic substances can be maximized. Can be maximized. This makes it possible to further activate the active functions of the photocatalyst layer, such as the oxidative decomposition activity of organic substances and the superhydrophilicity.
【００１９】また、上記の条件にてイオンボンバードを
することにより、表面近傍における結晶構造の中から０
2-を１個若しくは２個放出させて結晶格子中に丁度１〜
３Å（１〜１０Å3 ）の格子欠陥を生成させ、酸素欠損
を持つ酸化チタン結晶を生成することができる。こうし
てできた格子欠陥には有機物が捕捉されやすくなり、ま
た、格子欠陥の生成により電荷分離効率が大きくなり、
すなわち、バンド構造における伝導帯と価電子帯間のバ
ンドギャップが大きくなり、酸化力・還元力共に高くな
る事により分解活性が高くなる。これにより、上記光触
媒層の持つ有機物酸化分解活性及び超親水性等の活性機
能をより活性化させることができる。これに対し、上記
条件より下の条件では、表面の結晶構造に衝突する原子
のエネルギーが不十分で結晶構造から酸素原子が放出さ
れない。また逆にこの条件より上の条件では、Ｔｉ等の
光触媒を構成する金属までもが抜けてしまい、光触媒と
しての機能を失活してしまうので、酸素原子１個〜２個
分に相当する格子欠陥として上記範囲が望ましい。By performing ion bombardment under the above conditions, the crystal structure in the vicinity of the surface can be reduced to zero.
One or two 2- are released and just 1-
3Å (1Å10 3 ) lattice defects can be generated, and titanium oxide crystals having oxygen vacancies can be generated. Organic matter is easily trapped in the lattice defects formed in this way, and the generation of lattice defects increases the charge separation efficiency,
That is, the band gap between the conduction band and the valence band in the band structure is increased, and the oxidizing power and the reducing power are both increased, so that the decomposition activity is increased. This makes it possible to further activate the active functions of the photocatalyst layer, such as the oxidative decomposition activity of organic substances and the superhydrophilicity. On the other hand, under the conditions below the above conditions, the energy of the atoms colliding with the surface crystal structure is insufficient, and oxygen atoms are not released from the crystal structure. Conversely, under conditions above this condition, even the metal constituting the photocatalyst, such as Ti, will escape and the function as the photocatalyst will be deactivated, so the lattice equivalent to one or two oxygen atoms will be lost. The above range is desirable as a defect.
【００２０】さらに、上記の条件にて加速された原子に
よりイオンボンバードをすることにより、表面近傍にお
ける結晶構造の中の一部若しくは全部をルチル型構造か
ら活性の高いアナターゼ型へ相転移させるのに必要な衝
突エネルギーを与えることができる。すなわち、活性の
低いルチル型結晶構造より活性の最も高いアナターゼ型
結晶構造への相転移エネルギーを与えることができる。
これにより、上記光触媒層の持つ有機物酸化分解活性及
び超親水性等の活性機能をより活性化させることができ
る。しかし、アナターゼ型の結晶構造への相転移を起こ
すことができるエネルギー値はある閾値を持ち、即ち特
定の線幅のエネルギーに限られる為、上記の条件より低
い条件では相転移を起こすには原子の加速が不十分で、
結果として衝突エネルギーが不十分なため相転移は起こ
らない。また、上記の条件より高い条件においては表面
構造の一部がアナターゼ型から更にブルックライト型構
造へと転移してしまい、逆に活性を落としてしまう。こ
のため、上記範囲が望ましい。Further, by performing ion bombardment with atoms accelerated under the above conditions, a part or all of the crystal structure in the vicinity of the surface can be subjected to a phase transition from a rutile type structure to a highly active anatase type. The required collision energy can be provided. That is, a phase transition energy to an anatase crystal structure having the highest activity can be given than a rutile crystal structure having a low activity.
This makes it possible to further activate the active functions of the photocatalyst layer, such as the oxidative decomposition activity of organic substances and the superhydrophilicity. However, the energy value that can cause a phase transition to an anatase type crystal structure has a certain threshold value, that is, is limited to the energy of a specific line width. Acceleration is not enough,
As a result, no phase transition occurs due to insufficient collision energy. Further, under conditions higher than the above conditions, part of the surface structure is further transferred from the anatase type to the Brooklite type structure, and conversely the activity is reduced. Therefore, the above range is desirable.
【００２１】上記の各作用を発揮するには、上記の条件
を満たす必要があるが、このような条件の精密制御を可
能とする方法として、イオンボンバード処理が有効な手
段となる。The above-mentioned conditions must be satisfied in order to exhibit the above-mentioned effects. As a method for enabling precise control of such conditions, ion bombardment is an effective means.
【００２２】[0022]
【実施例】〔イオンボンバード処理〕ガラス製の基材を
図１に示す装置のパレット３に装着し、スパッタリング
により、酸化チタン被膜を積層した。続いて下記の条件
下でイオンボンバード処理を行った。処理条件は、パレ
ット回転数３０ｒｐｍ、電圧３００Ｖ、圧力２０ｍＴｏ
ｒｒ、Ａｒ+ ガス流量３０ｓｃｃｍ、処理時間３０分で
行った。EXAMPLE [Ion Bombarding] A glass substrate was mounted on the pallet 3 of the apparatus shown in FIG. 1, and a titanium oxide film was laminated by sputtering. Subsequently, ion bombardment treatment was performed under the following conditions. The processing conditions were as follows: pallet rotation speed 30 rpm, voltage 300 V, pressure 20 mTo
rr, Ar + gas flow rate 30 sccm, processing time 30 minutes.
【００２３】〔実施例１〕上記の処理行った酸化チタン
層の表面（φ１００ｍｍ）上に、１．３ｍｇ／ｃｍ2 の
合成ニコチンを均一に塗布し、１０ｃｍの高さより３ｍ
Ｗの強度のＵＶを照射した。そのニコチンの経時的残存
率を側定し、分解率に換算して図２に示すグラフに示し
た。Example 1 1.3 mg / cm 2 of synthetic nicotine was uniformly applied on the surface (φ100 mm) of the titanium oxide layer treated as described above, and 3 m from a height of 10 cm.
UV light of W intensity was irradiated. The nicotine residual rate over time was determined and converted to the degradation rate and shown in the graph of FIG.
【００２４】〔比較例１、２〕上記イオンボンバード処
理を行った酸化チタン層の代わりに、イオンボンバード
処理を行わない酸化チタン層（比較例１）、及び基材そ
のもの（比較例２）を用いた以外は、実施例１と同様に
ニコチンの経時的残存率を側定し、分解率に換算して図
２に示すグラフに示した。[Comparative Examples 1 and 2] Instead of the titanium oxide layer subjected to the ion bombardment treatment, a titanium oxide layer not subjected to the ion bombardment treatment (Comparative Example 1) and the substrate itself (Comparative Example 2) were used. Except for the presence of nicotine, the percentage of nicotine remaining over time was determined in the same manner as in Example 1, converted to the decomposition rate, and shown in the graph of FIG.
【００２５】なお、図２のグラフにおいて、各グラフ
は、下記のとおり、所定の実施例又は比較例を示す。 黒丸 ：実施例１ 黒の菱形 ：比較例１ 黒の四角形：比較例２In the graph of FIG. 2, each graph shows a predetermined example or a comparative example as described below. Black circle: Example 1 Black diamond: Comparative example 1 Black square: Comparative example 2
【００２６】[0026]
【発明の効果】この発明によれば、乾式法により製膜し
た光触媒層を、イオンボンバード処理という比較的簡単
な処理によって活性を高めることができる。According to the present invention, the activity of the photocatalyst layer formed by the dry method can be increased by a relatively simple treatment such as ion bombardment.
【００２７】また、スパッタ装置内にて処理を行えるの
で、特別な装置を組む必要がなくなる。Further, since the processing can be performed in the sputtering apparatus, it is not necessary to construct a special apparatus.
【００２８】さらに、イオンボンバード処理によって、
酸化分解活性と超親水性の機能を同時に向上させること
ができる。Further, by ion bombardment treatment,
The oxidative decomposition activity and the superhydrophilic function can be simultaneously improved.
【図１】イオンボンバード処理を行うための装置の例を
示す模式図FIG. 1 is a schematic view showing an example of an apparatus for performing ion bombardment processing.
【図２】ＵＶ照射時間とニコチン分解量との関係を示す
グラフFIG. 2 is a graph showing the relationship between UV irradiation time and nicotine decomposition amount.
１ 真空チャンバ ２ 陰極 ３ パレット ４ エアシリンダ ５ 排気管 ６ ガス流入管 ７ 絶縁層 １１ 基材 １２ 光触媒層 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Cathode 3 Pallet 4 Air cylinder 5 Exhaust pipe 6 Gas inflow pipe 7 Insulating layer 11 Base material 12 Photocatalytic layer
Claims (3)
バード処理することによる光触媒層の活性化方法。1. A method for activating a photocatalyst layer by ion bombarding a photocatalyst layer formed on a substrate.
０〜６００Ｖ、圧力１０〜５０ｍＴｏｒｒ、ガス流量１
０〜５０ｓｃｃｍ、時間１０〜６０分の条件下で行う請
求項１に記載の光触媒層の活性化方法。2. The method according to claim 1, wherein the ion bombarding is performed at a voltage of 10
0-600V, pressure 10-50mTorr, gas flow rate 1
The method for activating a photocatalyst layer according to claim 1, wherein the method is performed under the conditions of 0 to 50 sccm and a time of 10 to 60 minutes.
製膜した酸化チタン層である請求項１又は２に記載の光
触媒層の活性化方法。3. The method for activating a photocatalyst layer according to claim 1, wherein the photocatalyst layer is a titanium oxide layer formed on the substrate by a dry method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35438299A JP3998381B2 (en) | 1999-12-14 | 1999-12-14 | Photocatalytic layer activation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35438299A JP3998381B2 (en) | 1999-12-14 | 1999-12-14 | Photocatalytic layer activation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001170494A true JP2001170494A (en) | 2001-06-26 |
| JP3998381B2 JP3998381B2 (en) | 2007-10-24 |
Family
ID=18437191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35438299A Expired - Fee Related JP3998381B2 (en) | 1999-12-14 | 1999-12-14 | Photocatalytic layer activation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3998381B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002219769A (en) * | 2001-01-24 | 2002-08-06 | Nippon Steel Corp | Metal plate having photocatalytic activity and method for manufacturing the same |
| JP2006130357A (en) * | 2004-11-02 | 2006-05-25 | Mitsubishi Plastics Ind Ltd | Photocatalyst particle and substrate provided with photocatalyst layer |
-
1999
- 1999-12-14 JP JP35438299A patent/JP3998381B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002219769A (en) * | 2001-01-24 | 2002-08-06 | Nippon Steel Corp | Metal plate having photocatalytic activity and method for manufacturing the same |
| JP4567892B2 (en) * | 2001-01-24 | 2010-10-20 | 新日本製鐵株式会社 | Metal plate having photocatalytic activity and method for producing the same |
| JP2006130357A (en) * | 2004-11-02 | 2006-05-25 | Mitsubishi Plastics Ind Ltd | Photocatalyst particle and substrate provided with photocatalyst layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3998381B2 (en) | 2007-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4221859B2 (en) | Manufacturing method of semiconductor device | |
| JP3622585B2 (en) | Articles having photocatalytic activity | |
| Yamagishi et al. | Thin film TiO2 photocatalyst deposited by reactive magnetron sputtering | |
| WO2005075371A1 (en) | Method for cleaning a substrate | |
| JP2000502236A (en) | Electronic components, especially components that operate with surface acoustic waves-SAW components | |
| JP2008264611A (en) | Photocatalyst structure | |
| JP4261353B2 (en) | Photocatalyst body, photocatalyst body manufacturing method, and photocatalyst body manufacturing apparatus | |
| Song et al. | Crystallinity and photocatalytic activity of TiO2 films deposited by reactive sputtering using various magnetic field strengths | |
| JPH08293483A (en) | Flattening method for solid surface with gas cluster ion beam | |
| JP3998381B2 (en) | Photocatalytic layer activation method | |
| Song et al. | Crystal structure and photocatalytic activity of TiO2 films deposited by reactive sputtering using Ne, Ar, Kr, or Xe gases | |
| JP3911355B2 (en) | Method for producing photocatalyst | |
| JPS649727B2 (en) | ||
| JP3503787B2 (en) | Thin film formation method | |
| JPH06172990A (en) | Method for forming thin film and device therefor | |
| JP2009066497A (en) | Photocatalyst thin film of titanium oxide and its production method | |
| JP2006130357A (en) | Photocatalyst particle and substrate provided with photocatalyst layer | |
| JPS62297462A (en) | Formation of film in vacuum at high rate | |
| ISHII et al. | High-rate deposition of titanium dioxide films with photocatalytic activities by gas flow sputtering | |
| JP4659517B2 (en) | Photocatalyst production method | |
| JP2003105534A (en) | Deposition method and deposition system for optical thin film | |
| JPH10158814A (en) | Vacuum evaporation system and method of its use | |
| JPH0382747A (en) | Formation of thin metal-surface film excellent in corrosion resistance and adhesive strength | |
| Xiwen et al. | Fabrication of titanium dioxide thin films by DBD-CVD under atmosphere | |
| JP2004027269A (en) | FILM DEPOSITION METHOD AND SYSTEM OF TiOx |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040513 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061101 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061107 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070105 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070227 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070501 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070508 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070528 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070710 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070807 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100817 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110817 Year of fee payment: 4 |
|
| LAPS | Cancellation because of no payment of annual fees |