JP2001167653A - Power source apparatus, heat-treatment apparatus and electric power supply apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power supply for regulating the power supplied to a plurality of loads by means of a simple construction, a heat-treatment apparatus and a method for supplying power. SOLUTION: A power source apparatus 3 comprises a transformer 11 for transforming an alternating current power source into two kinds of voltages. A secondary winding side of the transformer 11 is provided with a switch element 12. Furthermore, switch elements SW1-SW6 arranged between the switch element 12 and each of the heating resistors R1-R4, wherein the switch elements SW1-SW6 switch to supply power to the each of the heating resistors R1-R4 via a series wiring or via a parallel wiring. Also, a controlling part 14 periodically and synchronously switches the switch element 12 and the switch elements SW1-SW6 at the predetermined timing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a power supply device, a heat treatment device, and a power supply method.

[0002]

2. Description of the Related Art In a photoresist processing step in the manufacture of a semiconductor device, a resist is applied to a substrate such as a semiconductor wafer (hereinafter, referred to as "wafer") and a predetermined pattern is exposed. Is supplied with a developing solution to perform the developing process.

[0003] These processes are performed by, for example, a system in which a coating and developing processing apparatus for performing resist coating and developing processing on an exposure apparatus is connected. Such a coating and developing apparatus includes a series of processing necessary for the coating and developing processing of a wafer, for example, a hydrophobic treatment (adhesion processing) for improving the fixability of a resist, a resist coating processing for coating a resist, and a resist coating after the resist coating. A process for individually performing various processes such as a heating process for heating the wafer to cure the resist, a heating process for heating the exposed wafer at a predetermined temperature, and a developing process for developing the exposed wafer. A unit is provided, and a wafer transfer device transfers a wafer between these processing units.

Generally, a heat processing unit for performing the above-described heat processing is configured to place a wafer on a heat processing plate in which a heater is embedded. Then, in order to keep the heating temperature in the heat treatment plate constant, for example, a temperature detection element is embedded in the heat treatment plate, and control is performed to turn on / off power supply to the heater according to the detection result by the temperature detection element. I have. For example, power supply to the heater is performed until the heat treatment plate reaches a certain temperature, power supply to the heater is stopped when the temperature reaches a certain temperature, and then power supply to the heater is performed again when the temperature falls below a certain temperature. ing.

[0005] On the other hand, the heat treatment temperature in the heat treatment unit may differ depending on the layer formed on the wafer. In this case, it is desirable to set the heat treatment temperature in the heat treatment unit to a desired temperature while exchanging the reticle on the exposure apparatus side. Therefore, the response to heat is enhanced by making the above-mentioned heat treatment plate very thin.

[0006]

However, as described above, if the thickness of the heat-treated plate is reduced or the material of the heat-treated plate is made of a material having high responsiveness in order to enhance the responsiveness to heat, the area in the heat-treated plate is reduced. This causes temperature variations.

Therefore, it is conceivable to divide the heat treatment plate into a plurality of regions and perform the above-described temperature control for each of the divided regions. That is, as an example, it is considered that a heater, a temperature detection element, a control unit, and the like are independently provided for each region, and temperature control is performed independently.

However, such a configuration in which control is performed for each region has a problem that the number of components increases and the control system becomes more complicated. In particular, as more precise temperature control and processing of a larger wafer are required, the area to be divided increases and such a problem is likely to become apparent.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and a power supply device, a heat treatment device, and a power supply capable of equalizing power supplied to a plurality of loads with a very simple configuration. It is intended to provide a way.

[0010]

According to a first aspect of the present invention, there is provided a power supply device for supplying power to at least a first load and a second load. A series wiring for connecting a load and a second load in series, a parallel wiring for connecting the first load and the second load in parallel, the first load and the second Supplying power to the load via the series wiring,
A switching unit for switching whether to supply power via the parallel wiring; and a control unit for controlling switching by the switching unit at a predetermined timing.

According to the present invention, when the first load and the second load are connected in series via the series wiring, the first load and the second load are connected in series.
When the first and second loads are connected in parallel via parallel wiring, the power supplied to the one having the larger resistance value between the first load and the second load becomes larger. The smaller the resistance value of the first load and the second load, the smaller the supplied power. Therefore, even when the resistance value of the first load is different from the resistance value of the second load, power is supplied to the first load and the second load via the series wiring, or By switching at a predetermined timing whether power is supplied via the wiring, power supplied to the first load and power supplied to the second load are made uniform.
Therefore, according to the present invention, electric power supplied to a plurality of loads can be made uniform with a very simple configuration.

A power supply according to one aspect of the present invention has a transformer for transforming an AC power supply into a first voltage and a second voltage, and the switching means includes a first load and a second voltage. When supplying power to the load via the series wiring, the first voltage is selected as a power supply, and power is supplied to the first load and the second load via the AC wiring. Sometimes, the second voltage is selected as a power supply.

Thus, the power supplied to each load can be equalized more accurately with a simpler configuration.

[0014] A power supply device according to one aspect of the present invention includes a zero-crossing point detecting means for detecting a zero-crossing point of a voltage applied to the switching means. It is characterized in that control is performed so as to be performed at the set zero cross point.

[0015] This suppresses generation of noise when switching between the supply of power to the first load and the second load via the series wiring and the supply of power via the parallel wiring. Can be.

A power supply unit according to one aspect of the present invention is characterized in that the control means controls the switching by the switching means to be performed at predetermined time intervals.

Thus, the power supplied to the first load and the power supplied to the second load can be made uniform.

[0018] In the power supply device according to one aspect of the present invention, the control means may switch between the power supplied to the first load and the power supplied to the second load by the switching means. It is characterized in that control is performed such that the timings are equal.

Thus, the power supplied to the first load and the power supplied to the second load can be made uniform.

The heat treatment apparatus of the present invention is a heat treatment apparatus for heating a substrate, wherein the mounting plate on which the substrate is mounted on the front surface and the back surface of the mounting plate or a different area in the mounting plate. And at least a first heating element and a second heating element, and a power supply for supplying power to the first and second heating elements, wherein the power supply includes the first heating element and the second heating element. A serial wiring for connecting the first heating element and the second heating element in parallel, a parallel wiring for connecting the first heating element and the second heating element in parallel, the first heating element and the second heating element. For the heating element, power is supplied through the series wiring,
A switching unit for switching whether to supply power via the parallel wiring; and a control unit for controlling switching by the switching unit at a predetermined timing.

According to the present invention, when the first heating element and the second heating element are connected in series via the series wiring, the resistance value of the first heating element and the second heating element can be changed. When the first heating element and the second heating element are connected in parallel via parallel wiring, the first heating element and the second heating element The smaller the resistance value of the elements, the smaller the supplied power. Therefore, even when the resistance value of the first heating element is different from the resistance value of the second heating element, power is supplied to the first heating element and the second heating element via the serial wiring. Or
By switching the power supply via the parallel wiring at a predetermined timing, the power supplied to the first heating element and the power supplied to the second heating element are made uniform. Therefore, according to the present invention, it is possible to equalize the power supplied to the plurality of heating elements arranged in different regions of the mounting plate with a very simple configuration, and to reduce the temperature of the substrate mounted on the mounting plate. The heat treatment can be performed without variation in the heat treatment.

A heat treatment apparatus according to one embodiment of the present invention includes:
The first and second heating elements are heating resistors formed by printing on the back surface of the mounting plate.

Thus, the heating element can be easily arranged in each area on the back surface of the mounting plate. Here, when the heating resistor is formed on the back surface of the mounting plate by printing, the thickness of the heating resistor often varies and the resistance value varies between the heating resistors. Especially effective.

A heat treatment apparatus according to one embodiment of the present invention
The power supply device includes a transformer that transforms an AC power supply into a first voltage and a second voltage, and the switching unit includes the first power supply and the second power supply.
When power is supplied to the heating element and the second heating element via the series wiring, the first heating element is used as the power supply.
And when the power is supplied to the first heating element and the second element via the AC wiring, the second voltage is selected as a power supply.

Thus, the electric power supplied to each heating element can be more accurately equalized with a simpler configuration.

A heat treatment apparatus according to one embodiment of the present invention
It has zero cross point detection means for detecting a zero cross point of the voltage applied to the switching means, and the control means controls the switching by the switching means to be performed at the detected zero cross point. I do.

[0027] This prevents noise from being generated when switching between the supply of power to the first heating element and the second heating element via the serial wiring and the supply of power via the parallel wiring. Can be suppressed.

A heat treatment apparatus according to one embodiment of the present invention
The control means controls the switching by the switching means so as to be performed at predetermined time intervals.

Thus, the power supplied to the first heating element and the power supplied to the second heating element can be made uniform.

[0030] The heat treatment apparatus according to one embodiment of the present invention comprises:
The control unit controls the switching by the switching unit so that the switching is performed at a timing such that the power supplied to the first heating element and the power supplied to the second heating element are substantially equal. It is characterized by.

Thus, the power supplied to the first heating element and the power supplied to the second heating element can be made uniform.

According to the power supply method of the present invention, at least the first
Supplying power to the first load and the second load, wherein (a) the first load and the second load are connected in series to supply power; Supplying a power by connecting a first load and a second load in parallel;
(C) a step of controlling the process so that the process (a) and the process (b) are switched at a predetermined timing.

[0033] A power supply method according to another aspect of the present invention includes:
Supplying power to a heat treatment apparatus including a mounting plate on which a substrate is mounted on a front surface and at least first and second heating elements disposed on the back surface of the mounting plate or in the mounting plate. A method comprising: (a) connecting the first heating element and the second heating element in series to supply power; and (b)
A step of connecting the first heating element and the second heating element in parallel to supply power, and (c) controlling the steps (a) and (b) to be switched at a predetermined timing. And a step of performing

The method of the present invention has the same effects as described above. Further, the embodiment shown in the above-described apparatus invention can be applied to the method invention in a method manner, and the same effect can be obtained.

[0035]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a circuit diagram showing a configuration of a heat treatment apparatus according to one embodiment of the present invention.

As shown in FIG. 1, this heat treatment apparatus 1
Is a heat treatment unit 2 for heating the wafer W.
And a power supply device 3 for supplying power to the heat treatment unit 2.

In the heat treatment unit 2, a thin ceramic
A circular heat treatment plate 4 made of a
On the back surface of the plate 4, for example, four heating resistors as heating elements
Body R ₁~ R₄Is arranged.

More specifically, as shown in FIGS.
The heat treatment plate 4 is divided into, for example, four regions.
Heating resistor R in area₁~ R₄Is arranged. Heating resistance
Body R ₁~ R₄Is printed on the back surface of the heat treatment plate 4 by, for example, printing.
It is formed.

A plurality of, for example, three support pins 5 are arranged on the heat-treated plate 4 so as to be able to protrude and retract from the surface thereof. These support pins 5 are moved up and down by an elevating mechanism (not shown) arranged on the back side of the heat treatment plate 4. The support pins 5 protrude from the surface of the heat processing plate 4 and transfer the wafer W to, for example, an arm (not shown) of a transfer device. W is heated.

Further, on the surface of the heat treatment plate 4, a cover 6 for covering the surface side of the heat treatment plate 4 to form a closed space is arranged. The lid 6 is vertically moved up and down by a lifting mechanism (not shown) so that wafers can be transferred. A purge ring 7 is provided on the outer periphery of the heat treatment plate 4 for purging a closed space on the surface of the heat treatment plate 4 with, for example, nitrogen gas for cooling. The purge ring 7 is provided with a large number of holes 8 for jetting nitrogen gas for cooling toward the closed space along the surface of the purge ring 7, and a discharge port 9 is provided substantially at the center of the lid 6. The gas ejected from the holes 8 of the purge ring 7 is discharged from the discharge port 9 through the surface of the heat treatment plate 4 to cool the heat treatment plate 4.

The power supply 3 has a transformer 11 for transforming the AC power supply 10 into two types of voltages. A switching element 1 for selecting one voltage (tap of the transformer 11) from the two transformed voltages is provided on the secondary winding side of the transformer 11.
2 are provided. On the secondary winding side of the transformer 11, a zero-cross point detector 13 for detecting a zero-cross point of a voltage applied to the switch element 12 is arranged.

The switching element 12 and each heating resistor R
Between the ₁ to R _4, with respect to the heating resistors _R 1 to R _4,
Switch elements SW _{1 to} S that switch between supplying power via a serial wiring and supplying power via a parallel wiring
W ₆ is et al provided. That is, the switch elements SW _{1 to} SW
₆ is switched to the A side, the heating resistor R
₁ to R ₄ are connected in series, the switch element _SW 1 to SW
₆ is switched to the B side, the heating resistor R
₁ to R ₄ is adapted to be connected in parallel.

The switch element 12 and the switch element S
Between the W ₁ ~SW _6, it is provided with solid-state relay SSR.

Then, the control unit 14 controls the switching element 12 and
And switch element SW₁~ SW₆At a predetermined timing.
Switching to periodic (predetermined time interval) at the same time
ing. Specifically, the switch element 12 and the switch element
Child SW₁~ SW₆To the A side at the same time, and switch element
The series voltage selected by the child 12 is connected in series.
Heating resistor R₁~ R₄And then switch element 1
2 and switch element SW₁~ SW₆Cut to the B side at the same time
, The parallel voltage selected by the switch element 12
(For example, a voltage lower than the voltage for series)
Heating resistor R ₁~ R₄And apply the following
Replacement is repeated. This switching tab
As the imaging, for example, the heating resistor R₁~ R₄Supply to
Should be approximately equal to the power
No. In addition, such switching between series and parallel
Performed at the zero cross point detected by the loss point detector 13
It is desirable to control in such a way.

Here, the heating resistors R ₁ to R _{1 having} different resistance values are used.
When power is supplied by connecting R ₄ in series, the drive current is common, and the power (output) P supplied to each of the heating resistors R _{1 to} R ₄ is P = R × I ² . It becomes the resistance ratio.

On the other hand, when power is supplied by connecting heating resistors R _{1 to} R ₄ having different resistance values in parallel,
Since the drive voltage is common, the power (output) P supplied to each of the heating resistors R _{1 to} R ₄ is the inverse ratio of the resistance ratio because P = V ² / R.

In the present invention, the series / parallel switching is alternately repeated based on the above, so that the heating resistors R _{1 to} R ₄ are switched.
Is intended to cancel the variation in the resistance value of.

The principle of the present invention will be described in more detail.

First, the case where there are two heating elements will be described.

Here, the resistance value of the first heating element is R1,
The resistance value of the second heating element is R2, the drive voltage in parallel is Vp, the drive voltage in series is Vs, and the output of the first and second heating elements in series and parallel is P1s, P1p, P2.
Assuming that s and P2p, I = Vs / (R1 + R2) P1s = R1 × I ² = R1 × Vs ² / (R1 + R2) ² P2s = R2 × Vs ² / (R1 + R2) ² at the time of serial connection, and P1p = the ^{Vp 2 / R1 P2p = Vp 2} / R2.

Then, for example, if serial / parallel switching is performed with equal time distribution, P1s + P1p = P2s + P2p
Vs: Vp may be selected so that ^{That, P1s-P2s = P2p-P1p} Vs 2 / (R1 + R2) 2 × (R1-R2) = Vp 2 ×
From (1 / R2-1 / R1), Vs = (R1 + R2) / sqrt (R1 × R2) × Vp.

By the way, R2 = R1 (1 + ε), ε≪1
Approximate calculation: Vs / Vp ≒ (2 + ε) / (1 + ε / 2) = 2

The equation is valid even where ε is large.

Next, the case where the number of heating elements is three or more will be described.

In this case, if the variation in the resistance value between the heating elements is not large, it can be canceled approximately. In reality, the variation in the resistance value between the heating elements is not so large, so that even when the number of heating elements is three or more, the operation and effect according to the present invention are exerted, and they belong to the technical scope of the present invention.

That is, the value of each heating element is n
= 1, 2,. . . Assuming that N is added, (ΣRn)
/ N = R0, Rn = R0 (1 + εn), εn≪1
Approximate calculation.

By definition, Δεn = 0.

Therefore, in all series, the output is proportional to the resistance value.

On the other hand, if the total output in series is Ps, the output of each heating element is Pns = Ps × Rn / ΣRn = Ps × (1 + εn) / N. It is inversely proportional to the value.

Assuming that all outputs in parallel are Pp, the output of each heating element is Pnp = Pp × (1 / Rn) / Σ (1 / Rn), where 1 / Rn = ( 1 / R0) × (1 / (1 + ε)) ≒ (1 / R0) × (1-ε) Σ (1 / Rn) ≒ (1 / R0) Σ (1-ε) = (1 / R0) × ( N−Σε) = N / R0. By substituting these two equations into Pnp ≒ Pp × (1−ε) / N. . . Therefore, assuming that the output of each heating element is switched between serial and parallel with equal time distribution, Pn = Pns + Pnp =
(Ps (1 + ε) + Pp (1−ε)) / N, where Ps = Pp and the value is P / 2, then Pn
= P / N, and the output of each heating element becomes equal.

Hereinafter, Vs for equalizing Ps and Pp will be described.
/ Vp.

Ps = Vs ² / ΣRn = Vs ² / (N × R0) Pp = Vp ² / (1 / (Σ (1 / Rn))) ≒ Vp ² / (R0 / N) ∵Ps = Pp Vs / Vp ≒ sqrt ((N × R0) / (R0 / N))
= N. When driving N heating elements in series / parallel, the first
Secondly, the serial / parallel is switched by the same time distribution. Second, the resistance values are not so different from each other. Under these two conditions, by taking Vs = N × Vp, the variation of the resistance values is approximately reduced. Can be canceled.

Note that Pp, Vp, Vs
It is also possible to change the time of the serial / parallel drive so that Ps is equalized.

The heat processing unit according to the present invention configured as described above is preferably applied to the coating and developing system shown in FIGS.

As shown in FIG. 4, the coating and developing system includes a cassette unit 80 for sequentially taking out wafers W from a cassette CR in which wafers W are stored, and a resist solution coating process for the wafers W taken out by the cassette unit 80. And a process unit 81 for performing a process process for development and development, and an interface unit 82 for transferring the wafer W coated with the resist liquid to an exposure apparatus (not shown).

The cassette section 80 is provided with four projections 80a for positioning and holding the cassette CR, and a first sub-arm mechanism 91 for taking out the wafer W from the cassette held by the projections 80a. Have been. The sub arm mechanism 91 is configured to be rotatable in the θ direction, and has a function of transferring the wafer W taken out of the cassette to the main arm mechanism 92 provided in the process section 81.

The cassette section 80 and the processing section 81
The transfer of the wafer W between the third processing unit group G3
Is to be done through. As shown in FIG. 6, the third processing unit group G3 is configured by stacking a plurality of process processing units vertically. That is, the processing unit group G3 includes a cooling unit (COL) for cooling the wafer W, an adhesion unit (AD) for performing a hydrophobic treatment for improving the fixability of the resist solution to the wafer W, and alignment of the wafer W. Alignment unit (ALIM), and an extension unit (EX) for holding the wafer W on standby.
T), two pre-baking units (PREBAKE) for performing a heating process after resist application, and a post-exposure baking unit (PEBAKE) and a post-baking unit (POBAKE) for performing a heating process after an exposure process are sequentially arranged from bottom to top. It is configured by stacking. These pre-baking units (PREBA
KE), post exposure baking unit (PEBAKE) and post baking unit (PO
BAKE) is constituted by the heat treatment apparatus of the present invention.

As shown in this figure, a fourth processing unit group G4 is provided on the opposite side of the third processing unit group G3 across the main arm mechanism 92. Since the configuration is substantially the same as that of the third processing unit group G3, a detailed description thereof will be omitted.

As shown in FIG. 4, around the main arm mechanism 92, first to fifth processing unit groups G1 to G4 including the third and fourth processing unit groups G3 and G4.
G5 is provided so as to surround the main arm mechanism 92. Similarly to the third processing unit groups G3 and G4 described above, the other processing unit groups G1, G2 and G5 are configured by vertically stacking various processing units.

The developing device (DEV) of this embodiment
Are provided in the first and second processing unit groups G1 and G2, as shown in FIG. The first and second processing unit groups G1 and G2 are provided with a resist coating device (COT)
And a developing device (DEV) are vertically stacked.

On the other hand, the main arm mechanism 92 is
As shown in the figure, a cylindrical guide 99 extending vertically.
And a main arm 9 driven up and down along a guide 99
8 is provided. The main arm 98 is configured to rotate in a plane direction and to be driven forward and backward. Therefore, by driving the main arm 98 in the up-down direction, the wafer W is transferred to each of the processing unit groups G1
To G5 can be arbitrarily accessed.

The transfer of the wafer W from the first sub arm mechanism 91 to the main arm mechanism 92 is performed via the extension unit (EXT) and the alignment unit (ALIM) of the third processing unit group G3. .

Main arm mechanism 9 having received wafer W
2. First, the wafer W is transferred to the third processing unit group G3.
And carried into a hydrophobic treatment. Next, Adhesion Unit (AD)
Unloads the wafer W from the cooling unit (COL)
To cool.

The wafer W having been subjected to the cooling process is transferred to the first processing unit group G1 by the main arm mechanism 92.
(Or the second processing unit group G2) is positioned so as to face the resist liquid coating apparatus (COT), and is carried in. The wafer W coated with the resist liquid by the resist liquid coating device (COT) is unloaded by the main arm mechanism 92, and the third and fourth processing unit groups G3, G4
Is subjected to heat treatment for evaporating the resist solvent in the heat treatment unit (PEBAKE).

Next, after the wafer W is cooled by the cooling unit (COL), the fourth processing unit group G4
Is transferred to a second sub-arm mechanism 84 provided in the interface unit 82 via the extension unit (EXT). The second sub arm mechanism 84 that has received the wafer W sequentially stores the received wafer W in a buffer cassette (BUCR). Thereafter, when a receiving signal is output from an exposure apparatus (not shown), the wafers stored in the buffer cassette (BUCR) are sequentially transferred to the exposure apparatus by the sub-arm mechanism 84. When the exposure by the exposure apparatus is completed, the exposed wafer is received by the sub arm mechanism 84, and the peripheral exposure unit (WEE) performs peripheral exposure processing on the peripheral portion of the wafer with a width of, for example, 2 mm.

The wafer W that has been subjected to the peripheral exposure processing is transferred to the main arm mechanism 92 via the fourth processing unit group G4, and the main arm mechanism 92 is turned on.
Transfers the exposed wafer W to a post-exposure baking unit (PEBAKE). As a result, the wafer W is subjected to a heat treatment, and thereafter, is cooled to a predetermined temperature in a cooling unit (COL).

Next, the wafer W is moved to the main arm mechanism 9
By 2, it is inserted into a developing device (DEV) and is subjected to a developing process. The wafer W after the development processing is transported to any one of the baking units, and after being heated and dried, the extension unit (EX) of the third processing unit group G3 is used.
T), and is discharged to the cassette section 80.

Note that the fifth processing unit group G5 includes:
This is selectively provided, and in this example, is configured similarly to the fourth processing unit group G4. Further, the fifth processing unit group G5 is movably held by a rail 85, and is provided with the main arm mechanism 92 and the first to first processing units.
Maintenance processing can be easily performed on the fourth processing unit groups G1 to G4.

When the heat treatment apparatus of the present invention is applied to the coating and developing units shown in FIGS. 4 to 6, the heat treatment can be performed at an accurate temperature. Can be suppressed, and the line width can be controlled more accurately.

The present invention can of course be applied to devices other than such a coating and developing unit.

The power supply device of the present invention can be applied not only to a heat treatment device but also to other devices requiring accurate power supply control.

It goes without saying that various modifications can be made without departing from the spirit of the present invention.

[0084]

As described above, according to the present invention,
The power supplied to a plurality of loads can be made uniform with a very simple configuration.

[Brief description of the drawings]

FIG. 1 is a circuit diagram showing a configuration of a heat treatment apparatus according to an embodiment of the present invention.

FIG. 2 is a front view of the heat treatment unit shown in FIG.

FIG. 3 is a plan view of the heat treatment unit shown in FIG.

FIG. 4 is a plan view showing the overall configuration of a coating and developing system to which an embodiment of the present invention is applied;

FIG. 5 is a front layout diagram showing the entire configuration of a coating and developing system to which an embodiment of the present invention is applied.

FIG. 6 is a rear layout diagram showing an overall configuration of a coating and developing system to which an embodiment of the present invention is applied.

[Explanation of symbols]

1 heat treatment apparatus 2 heating unit 3 power supply 4 heating plate 10 AC power supply 11 transformer _12, SW 1 to SW ₆ switching elements 13 zero-crossing point detector 14 control unit R ₁ to R ₄ heating resistor W wafer than this text box

Claims (13)

[Claims] 1. A power supply device for supplying power to at least a first load and a second load, comprising: a series wiring for connecting the first load and the second load in series; A parallel wiring for connecting the first load and the second load in parallel, and supplying power to the first load and the second load via the series wiring, or A power supply device comprising: switching means for switching whether to supply power via a wire; and control means for controlling switching by the switching means at a predetermined timing. 2. The power supply device according to claim 1, further comprising a transformer that transforms an AC power supply into a first voltage and a second voltage, wherein the switching unit is configured to switch the first load and the second load. When power is supplied to the second load via the series wiring, the first voltage is selected as a power supply, and power is supplied to the first load and the second load via the AC wiring. A power supply device, wherein the second voltage is selected as a power supply when the power is supplied. 3. The power supply device according to claim 2, further comprising: a zero-crossing point detecting unit that detects a zero-crossing point of a voltage applied to the switching unit, wherein the control unit performs switching by the switching unit. A power supply device, wherein control is performed so as to be performed at the detected zero-cross point. 4. One of claims 1 to 3
The power supply device according to claim 1, wherein the control unit controls the switching by the switching unit to be performed at predetermined time intervals. 5. One of claims 1 to 3
3. The power supply device according to claim 1, wherein the control unit switches at a timing such that the power supplied to the first load is substantially equal to the power supplied to the second load. A power supply device characterized in that the power supply device is controlled so as to perform the power supply operation. 6. A heat treatment apparatus for heat-treating a substrate, comprising: a mounting plate on which the substrate is mounted on a front surface; and a back surface of the mounting plate or at least a first region disposed in a different region in the mounting plate. First and second heating elements, and a power supply device for supplying power to the first and second heating elements, wherein the power supply device connects the first heating element and the second heating element in series. And a parallel wiring for connecting the first heating element and the second heating element in parallel, and for the first heating element and the second heating element, A switching unit that switches between supplying power via a serial wiring and supplying power via the parallel wiring; and a control unit controlling the switching by the switching unit to be performed at a predetermined timing. A heat treatment apparatus characterized by the above-mentioned. 7. The heat treatment apparatus according to claim 6, wherein the first and second heating elements are heating resistors formed by printing on the back surface of the mounting plate. Heat treatment equipment. 8. The heat treatment device according to claim 6, wherein the power supply device includes a transformer that transforms an AC power supply into a first voltage and a second voltage, and the switching unit. Selects the first voltage as a power source when supplying power to the first heating element and the second heating element via the serial wiring, and selects the first heating element and the second heating element. Wherein the second voltage is selected as a power source when power is supplied to the element through the AC wiring. 9. The heat treatment apparatus according to claim 8, further comprising: a zero-cross point detecting unit that detects a zero-cross point of a voltage applied to the switching unit, wherein the control unit performs switching by the switching unit. Is performed so as to be performed at the detected zero-cross point. 10. The heat treatment apparatus according to claim 6, wherein the control unit controls the switching by the switching unit at a predetermined time interval. A heat treatment apparatus characterized by the above-mentioned. 11. The heat treatment apparatus according to claim 6, wherein the control unit switches the power supplied to the first heating element by the switching unit. And a power supply to the second heating element is controlled so as to be performed at a timing substantially equal to the power supplied to the second heating element. 12. A method for supplying power to at least a first load and a second load, the method comprising:
(C) supplying power by connecting the first load and the second load in series, and (b) supplying power by connecting the first load and the second load in parallel. A) controlling the power supply so that the steps (a) and (b) are switched at a predetermined timing. 13. A mounting plate on which a substrate is mounted on a front surface, and at least a first heating element and a second heating element which are arranged in different regions in the back surface of the mounting plate or the mounting plate. A method for supplying power to a heat treatment apparatus, comprising: (a) supplying power by connecting the first heating element and the second heating element in series; and (b) supplying the first heating element and the second heating element. A step of supplying power by connecting the heating element and the second heating element in parallel, and (c) a step of controlling the steps (a) and (b) to be switched at a predetermined timing. A power supply method, comprising: