JP2001156336A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JP2001156336A JP2001156336A JP34003899A JP34003899A JP2001156336A JP 2001156336 A JP2001156336 A JP 2001156336A JP 34003899 A JP34003899 A JP 34003899A JP 34003899 A JP34003899 A JP 34003899A JP 2001156336 A JP2001156336 A JP 2001156336A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting diode
- semiconductor
- alumina substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、可視光が発光可能
な発光素子と、この発光素子からの光を蛍光体によって
波長変換する発光ダイオードに係わり、特に可視光の長
波長側においても高輝度に発光可能なことにより演色性
の高い混色光が発光可能な発光ダイオードを提供するこ
とにある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting element capable of emitting visible light and a light-emitting diode for converting the light from the light-emitting element with a fluorescent material. An object of the present invention is to provide a light emitting diode capable of emitting mixed color light having high color rendering properties by being able to emit light.
【０００２】[0002]
【従来技術】窒化化物半導体（ＡｌXＩｎYＧａ
1-X-YＮ、０≦Ｘ≦１、０≦Ｙ≦１、Ｘ＋Ｙ＝１）を用
いた発光素子が開発され、紫外光から可視光の長波長側
である赤色光が発光可能となり半導体を用いた照明装置
が俄に現実味を帯び始めている。2. Description of the Related Art Nitride semiconductors (Al X In Y Ga
A light-emitting element using 1-XYN , 0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, X + Y = 1) has been developed, and it is possible to emit red light, which is a long wavelength side of visible light from ultraviolet light, and use a semiconductor. Lighting equipment is suddenly starting to take off.
【０００３】このような中、本出願人は可視光の青色光
を発光するサファイア基板上に形成された窒化ガリウム
半導体からなる発光素子と、この発光素子からの青色光
を吸収し、補色となる黄色が発光可能なＣｅで付活され
たＹＡＧ蛍光体とを組み合わせることによって、信頼性
高く高輝度に発光可能な実用的白色発光ダイオードを開
発させた。このような発光ダイオードは、二端子一チッ
プの比較的簡単な構成で実用的な信用性を持った高輝度
な白色光を得ることができるために種々の分野に応用さ
れ始めている。この白色発光ダイオードは蛍光体を利用
しているがゆえに、可視光における赤み成分をも発光し
演色性もＲａ＝８５以上とすることができる。Under such circumstances, the present applicant has developed a light-emitting element made of a gallium nitride semiconductor formed on a sapphire substrate that emits visible blue light, and absorbs the blue light from this light-emitting element to provide a complementary color. By combining with a YAG phosphor activated with Ce capable of emitting yellow light, a practical white light emitting diode capable of emitting light with high reliability and high luminance was developed. Such light-emitting diodes have begun to be applied to various fields because high-brightness white light with practical reliability can be obtained with a relatively simple configuration of two terminals and one chip. Since this white light emitting diode uses a phosphor, it can also emit a reddish component in visible light and have a color rendering property of Ra = 85 or more.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、利用分
野の広がりにつれ、より演色性の高い発光ダイオードが
求められる現在においては更なる改良が求められてい
る。特に、それぞれ可視光を発光可能な発光素子及び蛍
光体を利用することによって比較的簡単な構成を生かし
つつ演色性の高い白色系が発光可能な発光ダイオードを
提供することにある。However, as the field of use expands, light-emitting diodes with higher color rendering properties are required, and further improvements are required. In particular, it is an object of the present invention to provide a light emitting diode capable of emitting a white light with a high color rendering property while utilizing a relatively simple structure by utilizing a light emitting element and a phosphor which can emit visible light.
【０００５】[0005]
【課題を解決する手段】本発明は、Ｃｒが含有されたア
ルミナ基板上に可視光が発光可能な窒化物系化合物半導
体からなる半導体発光層を有する発光素子と、イットリ
ウム・アルミニウム・ガーネット系蛍光体とを有する発
光ダイオードである。これによって、比較的簡単な構成
で演色性の高い混色光が発光可能な発光ダイオードとす
ることができる。また、比較的簡単な構成で信頼性の高
い発光ダイオードとすることもできる。SUMMARY OF THE INVENTION The present invention provides a light emitting device having a semiconductor light emitting layer made of a nitride compound semiconductor capable of emitting visible light on an alumina substrate containing Cr, and a yttrium aluminum garnet phosphor. And a light emitting diode having: Thus, a light emitting diode capable of emitting mixed color light having high color rendering properties with a relatively simple configuration can be obtained. Further, a highly reliable light emitting diode can be provided with a relatively simple configuration.
【０００６】本発明の請求項２に記載の発光ダイオード
は、アルミナ基板に含有されるＣｒが、５５０ｎｍの波
長における吸光度が１０ｃｍ― 1以上である。これによ
って、より赤色成分が高輝度に発光可能となると共に、
発光素子形成時におけるアルミナ基板のスクライブなど
によっても歩留まりの高い発光ダイオードとすることが
できる。[0006] The light emitting diode according to claim 2 of the present invention, Cr contained in the alumina substrate, the absorbance at a wavelength of 550nm is 10 cm - 1 or more. This allows the red component to emit light with higher luminance,
A light-emitting diode with a high yield can be obtained even by scribing the alumina substrate when forming the light-emitting element.
【０００７】本発明の請求項３に記載の発光ダイオード
は、半導体発光層からの第一の可視光と、蛍光体からの
第二の可視光と、アルミナ基板は少なくとも第二の可視
光を吸収し、波長変換することによって第二の可視光の
主発光ピークよりも長波長側に主発光ピークを持った第
三の可視光を発光し、且つ第一、第二及び第三の可視光
の混色光によって白色光が発光可能な発光ダイオードで
ある。According to a third aspect of the present invention, in the light emitting diode, the first visible light from the semiconductor light emitting layer, the second visible light from the phosphor, and the alumina substrate absorb at least the second visible light. And, by wavelength conversion, emits third visible light having a main emission peak on a longer wavelength side than the main emission peak of the second visible light, and the first, second and third visible light It is a light emitting diode that can emit white light by mixed light.
【０００８】これによって、蛍光体を樹脂封止等する場
合においても蛍光体及び樹脂が劣化することなく各種イ
ンジケータ、バックライト光源、照明用光源などに利用
可能な発光ダイオードとすることができる。Accordingly, even when the phosphor is sealed with a resin or the like, the light emitting diode can be used as various indicators, a backlight light source, a light source for illumination, and the like without deterioration of the phosphor and the resin.
【０００９】本発明の請求項４に記載の発光ダイオード
は、半導体発光層の主発光ピークが４２０ｎｍから４９
０ｎｍの範囲内にある青色系が発光可能な発光素子を用
いた発光ダイオードである。これによって、蛍光体を効
率よく波長変換させると共に、蛍光体からの波長を利用
して効率よくＣｒ含有アルミナ基板からより長波長の発
光スペクトルを放出させることができる。In the light emitting diode according to a fourth aspect of the present invention, the main light emission peak of the semiconductor light emitting layer is from 420 nm to 49 nm.
This is a light emitting diode using a light emitting element capable of emitting blue light within a range of 0 nm. As a result, the phosphor can be efficiently wavelength-converted, and a longer wavelength emission spectrum can be efficiently emitted from the Cr-containing alumina substrate using the wavelength from the phosphor.
【００１０】[0010]
【発明の実施の形態】本発明者らは種々実験の結果、相
互に可視光での変換効率の高い特定の材料を使用して、
実用的信頼性と高輝度化及び高演色性を両立できること
を見出し本発明を成したものである。BEST MODE FOR CARRYING OUT THE INVENTION As a result of various experiments, the present inventors have used specific materials having mutually high conversion efficiency with visible light,
The present invention has been found that both practical reliability and high luminance and high color rendering properties can be achieved.
【００１１】すなわち、可視光が発光可能な窒化物半導
体からなる発光層を有する発光素子と、この発光素子か
らの光を利用したセリウムで付活されたイットリウム・
アルミニウム・ガーネット系蛍光体（例えば、（Ｙ1-a
Ｇｄa）3（Ａｌ1-bＧａb）5Ｏ 12：Ｃｅ、ただし、０≦
ａ≦１、０≦ｂ≦１）と、更にこの蛍光体からの光を利
用してより長波長に変換可能なＣｒ含有アルミナ基板を
半導体発光層を形成させた発光素子に応用することによ
って、より実用的な白色系が発光可能な発光ダイオード
を形成したものである。That is, a nitride semiconductor capable of emitting visible light
Light-emitting element having a light-emitting layer composed of a body and the light-emitting element
Yttrium activated by cerium using these lights
Aluminum-garnet phosphor (for example, (Y1-a
Gda)Three(Al1-bGab)FiveO 12: Ce, provided that 0 ≦
a ≦ 1, 0 ≦ b ≦ 1), and the light from this phosphor is
Alumina substrate containing Cr that can be converted to longer wavelengths
By applying it to a light emitting device with a semiconductor light emitting layer
Light emitting diode that can emit more practical white light
Is formed.
【００１２】本発明は図２に示すように、Ｃｒが含有さ
れたアルミナ基板であるルビー基板２０１上に、ＧａＮ
のバッファ層を介して、Ｓｉがアンドープの第一のｎ型
ＧａＮ層、第一のｎ型ＧａＮ層上にＳｉが含有され電極
が形成される第二のｎ型ＧａＮからなるｎ型コンタクト
層、Ｓｉ含有ｎ型ＧａＮ上に形成されたＳｉがアンドー
プの第三のｎ型ＧａＮ層、多重量子井戸構造とされるＧ
ａＮ（障壁層）／ＩｎＧａＮ（井戸層）が３層積層され
た発光層２０２、Ｍｇがドープされたｐ型ＡｌＧａＮか
なるクラッド層、Ｍｇがドープされたｐ型ＧａＮからな
るｐ型コンタクト層及びｐ型コンタクト層上に形成され
たｐ型電極と、ｎ型コンタクト層上に形成されたｎ型電
極が形成されている。多重量子井戸構造の発光層は通電
により主発光ピークが４７０ｎｍの青色が発光可能なよ
うにＩｎの組成比を選択させてある。なお、ここでは、
多重量子井戸構造の発光層を利用してあるがＩｎＧａＮ
を利用した単一量子井戸構造としても良い。According to the present invention, as shown in FIG. 2, a GaN substrate is provided on a ruby substrate 201 which is an alumina substrate containing Cr.
A first n-type GaN layer undoped with Si, a second n-type GaN layer containing Si on the first n-type GaN layer to form an electrode, Si formed on Si-containing n-type GaN, a third n-type GaN layer undoped, G having a multiple quantum well structure
a light emitting layer 202 in which three layers of aN (barrier layer) / InGaN (well layer) are stacked, a cladding layer made of p-type AlGaN doped with Mg, a p-type contact layer made of p-type GaN doped with Mg, and p A p-type electrode formed on the type contact layer and an n-type electrode formed on the n-type contact layer are formed. In the light emitting layer having a multiple quantum well structure, the composition ratio of In is selected so that blue light having a main emission peak of 470 nm can be emitted by energization. Here,
Utilizing a light emitting layer with a multiple quantum well structure, but using InGaN
May be used as a single quantum well structure.
【００１３】このような構成の発光素子を銅箔の一対の
リード電極２０５、２０６となるパターンが形成された
硝子エポキシ回路基板２０４上に金バンプを利用して発
光素子の電極と電気的に接続させフリップチップ型に配
置させる。つぎに、エポキシ樹脂中にセリウムで付活さ
れたイットリウム・アルミニウム・ガーネット系蛍光体
２０３として（Ｙ0.8Ｇｄ0.2）3Ａｌ5Ｏ12：Ｃｅを含有
させたモールド部材２０７をスクリーン印刷により塗布
して硬化させる。The light emitting element having such a configuration is electrically connected to the electrode of the light emitting element using gold bumps on a glass epoxy circuit board 204 on which a pattern to be a pair of lead electrodes 205 and 206 made of copper foil is formed. And placed in a flip-chip type. Next, a mold member 207 containing (Y 0.8 Gd 0.2 ) 3 Al 5 O 12 : Ce as an yttrium aluminum garnet phosphor 203 activated with cerium in an epoxy resin is applied by screen printing. Let it cure.
【００１４】こうして、Ｃｒが含有されたアルミナ基板
上に主発光ピークが４２０ｎｍから４９０ｎｍの範囲内
にある青色系が発光可能である窒化物系化合物半導体か
らなる半導体発光層を有する発光素子と、イットリウム
・アルミニウム・ガーネット系蛍光体とを有するＳＭＤ
型発光ダイオード２００を形成させることができる。発
光ダイオードのリード電極間に電流を流すと、半導体発
光層からの約４７０ｎｍに主発光ピークがある青色光
と、蛍光体からの約５６０ｎｍに主発光ピークがある黄
色光と、アルミナ基板からは約６９４ｎｍに主発光ピー
クを有する赤色光を発光し、それぞれの混色光によって
演色性の高い白色光を発光させることができる。この白
色発光ダイオードはＩｎ濃度を変化させることによって
発光層から放出させることができる第一の波長をある程
度調節させることができる。同様に、セリウムで付活さ
れたイットリウム・アルミニウム・ガーネット蛍光体は
Ｙの一部をＧｄで置換させることによって、発光スペク
トル及び吸収スペクトルをより長波長側に調節させるこ
とができる。また、Ａｌの一部をＧａで置換することに
よって、発光スペクトル及び吸収スペクトルをより短波
長側に調節させることができる。更に、Ｃｒで付活され
たアルミナ基板は、Ｃｒの濃度を増減させることによっ
て赤色成分の出力を調節させることができる。また、Ｃ
ｒが含有されたアルミナ基板の膜厚を調節させることに
よっても赤色成分の出力を調節させることができる。特
に、発光層に窒化物半導体を利用した発光素子はアルミ
ナ基板上に形成させることで結晶性よく高効率に実用的
な発光素子を形成させることができるが、アルミナ基板
が硬く窒化ガリウム半導体が劈開性を持たないことから
一度窒化ガリウム系化合物半導体が形成された半導体ウ
エハーから各発光素子を作り出すためにはＣｒ含有のア
ルミナ基板を薄くさせなければならない。しかしなが
ら、Ｃｒ含有のアルミナ基板を薄くさせると赤色成分の
発光出力が低下するため、１５０μｍ以下のＣｒ含有ア
ルミナ基板を利用する場合は、５５０ｎｍの波長におけ
る吸光度が１０ｃｍ― 1以上であることが好ましく、よ
り好ましくは吸光度が２５ｃｍ― 1以上さらに好ましく
は１２５ｃｍ― 1以上である。これによって、窒化物半
導体及びセリウム付活ＹＡＧを利用して実用的な赤色成
分の高い混色光から演色性の高い白色光まで形成させる
ことができる。なお、このような発光ダイオードは外観
形状を種々選択させることによって図３に示す如く８セ
グメントにも利用できることは言うまでもない。以下、
本発明の具体的実施例について、詳述するがこれのみに
限られない。Thus, a light-emitting element having a semiconductor light-emitting layer made of a nitride-based compound semiconductor capable of emitting blue light having a main light emission peak in the range of 420 nm to 490 nm on an alumina substrate containing Cr, and yttrium .SMD having aluminum garnet-based phosphor
The light emitting diode 200 can be formed. When a current is applied between the lead electrodes of the light emitting diode, blue light having a main emission peak at about 470 nm from the semiconductor light emitting layer, yellow light having a main emission peak at about 560 nm from the phosphor, and about Red light having a main emission peak at 694 nm is emitted, and white light with high color rendering properties can be emitted by each mixed color light. In the white light emitting diode, the first wavelength that can be emitted from the light emitting layer can be adjusted to some extent by changing the In concentration. Similarly, in the yttrium-aluminum-garnet phosphor activated with cerium, the emission spectrum and the absorption spectrum can be adjusted to longer wavelengths by substituting a part of Y with Gd. Further, by substituting a part of Al with Ga, the emission spectrum and the absorption spectrum can be adjusted to shorter wavelengths. Further, in the alumina substrate activated with Cr, the output of the red component can be adjusted by increasing or decreasing the concentration of Cr. Also, C
The output of the red component can also be adjusted by adjusting the film thickness of the alumina substrate containing r. In particular, a light emitting element using a nitride semiconductor for the light emitting layer can be formed on an alumina substrate to form a practical light emitting element with high crystallinity and high efficiency, but the alumina substrate is hard and the gallium nitride semiconductor is cleaved. In order to produce each light emitting element from a semiconductor wafer on which a gallium nitride-based compound semiconductor has been once formed, the Cr-containing alumina substrate must be thin because it has no property. However, since when the thinned alumina substrate of Cr-containing light emission output of the red component is reduced, when using the following Cr-containing alumina substrate 150μm the absorbance at a wavelength of 550nm is 10 cm - is preferably 1 or more, 1 or more and more preferably 125 cm - - more preferably absorbance 25cm is 1 or more. Thereby, it is possible to form from a mixed color light having a high red component to a white light having a high color rendering property using the nitride semiconductor and the cerium-activated YAG. It is needless to say that such a light emitting diode can be used for eight segments as shown in FIG. 3 by selecting various appearance shapes. Less than,
Specific examples of the present invention will be described in detail, but are not limited thereto.
【００１５】[0015]
【実施例】発光素子として発光ピークが約４７０ｎｍの
ＩｎＧａＮ半導体を井戸層とした発光層を用いた図１の
如き発光ダイオードを形成させる。ＬＥＤチップ１０１
は、洗浄させたＣｒ付活のα−アルミナ（ルビー）基板
上にＴＭＧ（トリメチルガリウム）ガス、ＴＭＡ（トリ
メチルアルミニウム）ガス、窒素ガス及びドーパントガ
スをキャリアガスと共に流し、ＭＯＣＶＤ法で窒化ガリ
ウム系化合物半導体を成膜させることにより形成させ
た。ドーパントガスとしてＳｉＨ4とＣｐ2Mｇと、を切
り替えることによってｎ型導電性を有する窒化ガリウム
半導体とｐ型導電性を有する窒化ガリウム半導体を形成
しｐｎ接合を形成させた。具体的には、Ｃｒが含有され
たアルミナ基板であるルビー基板上に、ＧａＮのバッフ
ァ層を介して、Ｓｉがアンドープの第一のｎ型ＧａＮ
層、第一のｎ型ＧａＮ層上にＳｉが含有され電極が形成
される第二のｎ型ＧａＮからなるｎ型コンタクト層、Ｓ
ｉ含有ｎ型ＧａＮ上に形成されたＳｉがアンドープの第
三のｎ型ＧａＮ層、多重量子井戸構造とされるＧａＮ
（障壁層）／ＩｎＧａＮ（井戸層）が３層積層された発
光層、Ｍｇがドープされたｐ型ＡｌＧａＮかなるクラッ
ド層、Ｍｇがドープされたｐ型ＧａＮからなるｐ型コン
タクト層及びｐ型コンタクト層上に形成されたｐ型電極
と、ｎ型コンタクト層上に形成されたｎ型電極が形成さ
れている。（なお、ｐ型半導体は、成膜後４００℃以上
でアニールさせてある。）エッチングによりｐｎ各半導
体表面を露出させた後、スパッタリングにより各電極を
それぞれ形成させた。こうして出来上がった半導体ウエ
ハーのＣｒ含有アルミナ基板を約１００μｍの厚みにな
るまで研磨した後、スクライブラインを引き、外力によ
り分割させ発光素子としてＬＥＤチップを形成させる。EXAMPLE A light emitting diode as shown in FIG. 1 was formed as a light emitting element using a light emitting layer having an InGaN semiconductor having a light emission peak of about 470 nm as a well layer. LED chip 101
Flows a TMG (trimethylgallium) gas, a TMA (trimethylaluminum) gas, a nitrogen gas and a dopant gas together with a carrier gas on a cleaned Cr-activated α-alumina (ruby) substrate, and performs a gallium nitride-based compound by MOCVD. It was formed by depositing a semiconductor. By switching between SiH 4 and Cp 2 Mg as the dopant gas, a gallium nitride semiconductor having n-type conductivity and a gallium nitride semiconductor having p-type conductivity were formed, and a pn junction was formed. Specifically, on a ruby substrate which is an alumina substrate containing Cr, a first n-type GaN doped with Si is interposed via a GaN buffer layer.
An n-type contact layer comprising a second n-type GaN in which Si is contained on the first n-type GaN layer to form an electrode;
Si formed on i-containing n-type GaN, undoped third n-type GaN layer, GaN having a multiple quantum well structure
(Barrier layer) / Light emitting layer in which three layers of InGaN (well layer) are laminated, cladding layer made of p-type AlGaN doped with Mg, p-type contact layer made of p-type GaN doped with Mg, and p-type contact A p-type electrode formed on the layer and an n-type electrode formed on the n-type contact layer are formed. (Note that the p-type semiconductor was annealed at 400 ° C. or higher after film formation.) After exposing the pn semiconductor surfaces by etching, the respective electrodes were formed by sputtering. After polishing the Cr-containing alumina substrate of the semiconductor wafer thus completed to a thickness of about 100 μm, a scribe line is drawn and divided by external force to form an LED chip as a light emitting element.
【００１６】なお、Ｃｒが含有されたアルミナ基板はベ
ルヌーイ法を利用してＣｒ濃度を調節させながら形成さ
せる。ここでは、Ｃｒの濃度を５５０ｎｍにおける吸光
度を約２７ｃｍ― 1としてある。また、Ｃｒ含有α−ア
ルミナ基板の膜厚で発光素子から放出される赤色成分の
出力が変化する。なお、α−アルミナ基板にはＣｒに加
えてＴｉ及び／又はＥｕを含有させることもできる。The Cr-containing alumina substrate is formed using the Bernoulli method while controlling the Cr concentration. Here, the absorbance at 550nm and the concentration of Cr of about 27cm - is a 1. Further, the output of the red component emitted from the light emitting element changes depending on the thickness of the Cr-containing α-alumina substrate. The α-alumina substrate may contain Ti and / or Eu in addition to Cr.
【００１７】次に、銀メッキした銅製リードフレームの
先端にカップを有するマウント・リード１０５にＬＥＤ
チップをエポキシ樹脂でダイボンディングした。ＬＥＤ
チップの各電極とマウント・リード１０５及びインナー
・リード１０６と、をそれぞれ金線からなるワイヤーで
１０３でボンディングし電気的導通を取った。Next, an LED is mounted on a mount lead 105 having a cup at the tip of a silver-plated copper lead frame.
The chip was die-bonded with epoxy resin. LED
Each electrode of the chip was bonded to the mount lead 105 and the inner lead 106 with a gold wire 103 to establish electrical continuity.
【００１８】一方、フォトルミネセンス蛍光体は、Ｙ、
Ｇｄ、Ｃｅの希土類元素を化学量論比で酸に溶解した溶
解液を蓚酸で共沈させた。これを焼成して得られる共沈
酸化物と、酸化アルミニウム、酸化ガリウムと混合して
混合原料を得る。これにフラックスとしてフッ化アンモ
ニウムを混合して坩堝に詰め、空気中１４００°Ｃの温
度で３時間焼成して焼成品を得た。焼成品を水中でボー
ルミルして、洗浄、分離、乾燥、最後に篩を通して形成
させた。On the other hand, the photoluminescent phosphor is Y,
A solution obtained by dissolving rare earth elements of Gd and Ce in an stoichiometric ratio in an acid was coprecipitated with oxalic acid. This is mixed with a coprecipitated oxide obtained by calcination, aluminum oxide and gallium oxide to obtain a mixed raw material. This was mixed with ammonium fluoride as a flux, packed in a crucible, and fired in air at a temperature of 1400 ° C. for 3 hours to obtain a fired product. The calcined product was ball milled in water, washed, separated, dried, and finally formed through a sieve.
【００１９】形成された（Ｙ0.8Gｄ0.2)3Aｌ5O12:Ｃｅ
蛍光体８０重量部、エポキシ樹脂１００重量部をよく混
合してスリラーとさせた。このスリラーをＬＥＤチップ
が配置されたマウント・リード上のカップ内に配置させ
た。その後、フォトルミネセンス蛍光体が含有された樹
脂を１３０℃１時間で硬化させ蛍光体含有されたコーテ
ィング部１０２を形成させた。更に、ＬＥＤチップやフ
ォトルミネセンス蛍光体を外部応力、水分及び塵芥など
から保護する目的でモールド部材１０４として透光性エ
ポキシ樹脂を形成させた。モールド部材は、砲弾型の型
枠の中にフォトルミネセンス蛍光体のコーティング部が
形成されたリードフレームを挿入し透光性エポシキ樹脂
を混入後、１５０℃５時間にて硬化させた。こうして形
成された発光ダイオードは、通常のサファイア基板を利
用した白色発光ダイオードに対して演色性が大きく改善
された。同様に耐侯試験として温度２５℃６０ｍＡ通
電、温度２５℃２０ｍＡ通電、温度６０℃９０％ＲＨ下
で２０ｍＡ通電の各試験においても蛍光体及び基板に起
因する変化は観測されず通常のサファイア基板を利用し
た白色発光ダイオードと寿命特性に差がない。この発光
ダイオードの発光スペクトルを図４に示す。図４中、半
導体発光層からは青色となる第一の可視光と、蛍光体か
らの黄色となる第二の可視光と、及びアルミナ基板から
は蛍光体からの主発光ピークよりも長波長側に主発光ピ
ークを持った赤色光が発光していることが分かる。The formed (Y 0.8 Gd 0.2 ) 3 Al 5 O 12 : Ce
80 parts by weight of the phosphor and 100 parts by weight of the epoxy resin were mixed well to form a chiller. The chiller was placed in a cup on a mount lead on which the LED chip was placed. Thereafter, the resin containing the photoluminescent phosphor was cured at 130 ° C. for 1 hour to form a coating 102 containing the phosphor. Further, a translucent epoxy resin was formed as the mold member 104 for the purpose of protecting the LED chip and the photoluminescent phosphor from external stress, moisture, dust and the like. The mold member was cured at 150 ° C. for 5 hours after inserting a lead frame on which a coating portion of the photoluminescent phosphor was formed into a shell-shaped mold frame, mixing a translucent epoxy resin. The light emitting diode thus formed has greatly improved color rendering properties compared to a white light emitting diode using a normal sapphire substrate. Similarly, in each of the weathering tests at a temperature of 25 ° C. and a current of 60 mA, a temperature of 25 ° C. and a current of 20 mA, and a temperature of 60 ° C. and a current of 20 mA at 90% RH, a normal sapphire substrate was used without any change caused by the phosphor and the substrate. There is no difference in the life characteristics from the white light emitting diode obtained. FIG. 4 shows the emission spectrum of this light-emitting diode. In FIG. 4, the first visible light that becomes blue from the semiconductor light emitting layer, the second visible light that becomes yellow from the phosphor, and the longer wavelength side than the main emission peak from the phosphor from the alumina substrate. It can be seen that red light having a main emission peak is emitted.
【００２０】同様に、８セグメント型の発光ダイオード
３００としてそれぞれのセグメント型開口部にＣｒ含有
のアルミナ基板上に形成させた窒化物半導体からなる上
述と同様の発光素子３０１を配置させ、開口部内にセリ
ウムで付活されたイットリウム・アルミニウム・ガーネ
ット系蛍光体含有のシリコーン樹脂３０２を流し込み硬
化させる。通電によって、各セグメントが白色に発光可
能な８セグメントを構成させることができる。なお、こ
れを応用して種々のセグメントを組み合わせた発光ダイ
オードとして利用することもできる。Similarly, as the 8-segment light-emitting diode 300, the same light-emitting element 301 made of a nitride semiconductor formed on a Cr-containing alumina substrate is arranged in each segment-type opening, and the opening is formed in the opening. A silicone resin 302 containing a yttrium-aluminum-garnet-based phosphor activated with cerium is poured and cured. By energization, it is possible to configure eight segments in which each segment can emit white light. It should be noted that this can be applied to a light emitting diode in which various segments are combined.
【００２１】[0021]
【発明の効果】本発明の構成の発光ダイオードとするこ
とによって可視光を利用した実用的な高輝度かつ高演色
性の白色系が発光可能な発光ダイオードとすることがで
きる。特に、ＹＡＧ：Ｃｅから放出された比較的長波長
側の可視光を効率よく吸収して赤色成分を含む光を放出
するＣｒ含有のα−アルミナ基板を窒化ガリウム系化合
物半導体用に利用することによって高混色性よく信頼性
の高い発光ダイオードとすることができる。即ち、紫外
領域に近い光を利用することなく効率よく演色性の高い
発光を得ることができる。また、ＹＡＧ：Ｃｅが含有さ
れた樹脂でＣｒ含有のα−アルミナ基板上の窒化ガリウ
ム系化合物半導体からなる発光素子を被覆することによ
って混色性の優れた発光ダイオードとすることができ
る。即ち、蛍光体からの反射散乱とＣｒ含有のα−アル
ミナ基板との光の相互作用を効率的に利用することがで
きる。According to the light emitting diode of the present invention, it is possible to obtain a practical light emitting diode capable of emitting white light with high luminance and high color rendering using visible light. In particular, a Cr-containing α-alumina substrate that efficiently absorbs visible light of a relatively long wavelength side emitted from YAG: Ce and emits light containing a red component is used for a gallium nitride-based compound semiconductor. A highly reliable light emitting diode with high color mixing properties can be obtained. That is, it is possible to efficiently emit light having high color rendering properties without using light near the ultraviolet region. Further, by coating a light-emitting element made of a gallium nitride-based compound semiconductor on a Cr-containing α-alumina substrate with a resin containing YAG: Ce, a light-emitting diode having excellent color mixing properties can be obtained. That is, the interaction between the reflection scattering from the phosphor and the light with the Cr-containing α-alumina substrate can be used efficiently.
【図１】 図１は本発明の白色系が発光可能な砲弾型発
光ダイオードの模式的断面図を示す。FIG. 1 is a schematic cross-sectional view of a bullet-type light emitting diode capable of emitting white light according to the present invention.
【図２】 図２は本発明の白色系が発光可能なＳＭＤ型
発光ダイオードの模式的断面図を示す。FIG. 2 is a schematic cross-sectional view of an SMD light emitting diode capable of emitting white light according to the present invention.
【図３】 図３は本発明の白色系が発光可能な発光ダイ
オードを８セグメント型ＬＥＤに利用した模式的斜視図
を示す。FIG. 3 is a schematic perspective view in which a light emitting diode capable of emitting white light according to the present invention is used for an 8-segment LED.
【図４】 図４は本発明の白色発光ダイオードの発光ス
ペクトルを示す。FIG. 4 shows an emission spectrum of the white light emitting diode of the present invention.
１０１…ＬＥＤチップ １０２…フォトルミネセンス蛍光体が含有されたコーテ
ィング部 １０３…ワイヤー １０４…モールド部材 １０５…マウント・リード １０６…インナー・リード ２００…ＳＭＤ型発光ダイオード ２０１…Ｃｒが含有されたα−アルミナであるルビー基
板 ２０２…窒化物半導体からなる発光層 ２０３…セリウムで付活されたイットリウム・アルミニ
ウム・ガーネット系蛍光体 ２０４…硝子エポキシ回路基板 ２０５、２０６…リード電極 ２０７…モールド部材 ３００…８セグメント型の発光ダイオード ３０１…Ｃｒ含有のアルミナ基板上に形成させた窒化物
半導体からなる発光素子 ３０２…セリウムで付活されたイットリウム・アルミニ
ウム・ガーネット系蛍光体含有の樹脂DESCRIPTION OF SYMBOLS 101 ... LED chip 102 ... Coating part containing photoluminescent phosphor 103 ... Wire 104 ... Mold member 105 ... Mount lead 106 ... Inner lead 200 ... SMD type light emitting diode 201 ... α-alumina containing Cr A ruby substrate 202 a light emitting layer made of a nitride semiconductor 203 a yttrium aluminum garnet based phosphor activated by cerium 204 a glass epoxy circuit board 205 and 206 a lead electrode 207 a molding member 300 a 8 segment type A light emitting diode 301: a light emitting element made of a nitride semiconductor formed on a Cr-containing alumina substrate 302: a resin containing a yttrium / aluminum / garnet-based phosphor activated by cerium
Claims (4)
光が発光可能な窒化物系化合物半導体からなる半導体発
光層を有する発光素子と、イットリウム・アルミニウム
・ガーネット系蛍光体とを有することを特徴とする発光
ダイオード。1. A light-emitting device having a semiconductor light-emitting layer made of a nitride-based compound semiconductor capable of emitting visible light on an alumina substrate containing Cr and an yttrium-aluminum-garnet-based phosphor. Light emitting diode.
５５０ｎｍの波長における吸光度が１０ｃｍ― 1以上で
ある請求項１に記載の発光ダイオード。2. The Cr contained in the alumina substrate,
The light emitting diode according to claim 1, wherein the light absorbance at a wavelength of 550 nm is 10 cm - 1 or more.
と、前記蛍光体からの第二の可視光と、前記アルミナ基
板は少なくとも第二の可視光を吸収し、波長変換するこ
とによって第二の可視光の主発光ピークよりも長波長側
に主発光ピークを持った第三の可視光を発光し、且つ第
一、第二及び第三の可視光の混色光によって白色光が発
光可能な請求項１に記載の発光ダイオード。3. The first visible light from the semiconductor light emitting layer, the second visible light from the phosphor, and the alumina substrate absorb at least the second visible light and convert the wavelength by converting the wavelength. Emits third visible light having a main emission peak on a longer wavelength side than the main emission peak of the second visible light, and can emit white light by mixed light of the first, second and third visible lights The light emitting diode according to claim 1.
から４９０ｎｍの範囲内にある青色系が発光可能である
請求項１に記載の発光ダイオード。4. The light emitting layer has a main light emission peak of 420 nm.
The light emitting diode according to claim 1, wherein the light emitting diode is capable of emitting a blue light within a range of from about 490 nm to about 490 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34003899A JP3509665B2 (en) | 1999-11-30 | 1999-11-30 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34003899A JP3509665B2 (en) | 1999-11-30 | 1999-11-30 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001156336A true JP2001156336A (en) | 2001-06-08 |
| JP3509665B2 JP3509665B2 (en) | 2004-03-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34003899A Expired - Fee Related JP3509665B2 (en) | 1999-11-30 | 1999-11-30 | Light emitting diode |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004088003A (en) * | 2002-08-29 | 2004-03-18 | Citizen Electronics Co Ltd | Light-emitting diode and manufacturing method thereof |
| JP2004193581A (en) * | 2002-11-25 | 2004-07-08 | Matsushita Electric Ind Co Ltd | Led illumination light source |
| JP2006173433A (en) * | 2004-12-17 | 2006-06-29 | Ube Ind Ltd | Light transforming ceramic compound, and light emitting device using the same |
| JP2006169422A (en) * | 2004-12-17 | 2006-06-29 | Ube Ind Ltd | Ceramic composite material for photo-conversion and emitter device using it |
| JP2006278889A (en) * | 2005-03-30 | 2006-10-12 | Sharp Corp | Semiconductor lamp and electronic apparatus |
| WO2022163604A1 (en) * | 2021-01-27 | 2022-08-04 | アダマンド並木精密宝石株式会社 | Light emitter, wristwatch, and method for manufacturing light emitter |
-
1999
- 1999-11-30 JP JP34003899A patent/JP3509665B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004088003A (en) * | 2002-08-29 | 2004-03-18 | Citizen Electronics Co Ltd | Light-emitting diode and manufacturing method thereof |
| JP2004193581A (en) * | 2002-11-25 | 2004-07-08 | Matsushita Electric Ind Co Ltd | Led illumination light source |
| JP4542329B2 (en) * | 2002-11-25 | 2010-09-15 | パナソニック株式会社 | LED lighting source |
| JP2006173433A (en) * | 2004-12-17 | 2006-06-29 | Ube Ind Ltd | Light transforming ceramic compound, and light emitting device using the same |
| JP2006169422A (en) * | 2004-12-17 | 2006-06-29 | Ube Ind Ltd | Ceramic composite material for photo-conversion and emitter device using it |
| JP4513541B2 (en) * | 2004-12-17 | 2010-07-28 | 宇部興産株式会社 | Light emitting device using ceramic composite for light conversion |
| JP2006278889A (en) * | 2005-03-30 | 2006-10-12 | Sharp Corp | Semiconductor lamp and electronic apparatus |
| WO2022163604A1 (en) * | 2021-01-27 | 2022-08-04 | アダマンド並木精密宝石株式会社 | Light emitter, wristwatch, and method for manufacturing light emitter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3509665B2 (en) | 2004-03-22 |
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