JP2001152346A - Vacuum film deposition apparatus, and film deposition method using the apparatus - Google Patents

Vacuum film deposition apparatus, and film deposition method using the apparatus

Info

Publication number
JP2001152346A
JP2001152346A JP32954599A JP32954599A JP2001152346A JP 2001152346 A JP2001152346 A JP 2001152346A JP 32954599 A JP32954599 A JP 32954599A JP 32954599 A JP32954599 A JP 32954599A JP 2001152346 A JP2001152346 A JP 2001152346A
Authority
JP
Japan
Prior art keywords
temperature
film
film forming
synthetic resin
web
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP32954599A
Other languages
Japanese (ja)
Other versions
JP3885431B2 (en
Inventor
Tsutomu Shirai
励 白井
Akira Takeda
晃 武田
Kentaro Tsutsui
健太郎 筒井
Kyoichi Yamamoto
恭市 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP32954599A priority Critical patent/JP3885431B2/en
Publication of JP2001152346A publication Critical patent/JP2001152346A/en
Application granted granted Critical
Publication of JP3885431B2 publication Critical patent/JP3885431B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum film deposition apparatus which uniformly controls the temperature distribution and the temperature of a synthetic resin film in an energy-saving manner and forms a physically and chemically uniform thin film without any damages or deformation on the synthetic resin film, and a film deposition method using the apparatus. SOLUTION: The vacuum deposition apparatus comprises, in a reaction vapor deposition chamber, a shower head electrode 22 comprising a process gas ejection unit and an electrode, and a flat heater 19 to heat synthetic resin film 9, the shower head electrode 22 is placed below the web-like synthetic resin film 9 with a predetermined clearance, and the heater is placed therebelow, a temperature adjusting mechanism to adjust the temperature of the heater is provided, the temperature adjusting mechanism measures the surface temperature of the synthetic resin film 9 using a thermometer having an infrared ray sensor, and controls the heater.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は真空中にて基板表面
などに薄膜を形成する真空成膜装置に関するものであ
り、特に化学蒸着法(CVD)等によりウエブ状合成樹
脂フィルム表面に薄膜を形成する真空成膜装置およびそ
れを用いた成膜方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum film forming apparatus for forming a thin film on a substrate surface or the like in a vacuum, and more particularly, to forming a thin film on a web-like synthetic resin film surface by a chemical vapor deposition method (CVD) or the like. The present invention relates to a vacuum film forming apparatus and a film forming method using the same.

【0002】[0002]

【従来の技術】従来技術の事例として化学蒸着(CV
D)法による巻取り式真空成膜装置を挙げ以下に説明す
る。
BACKGROUND OF THE INVENTION Chemical vapor deposition (CV) is an example of the prior art.
The winding type vacuum film forming apparatus according to the method D) will be described below.

【0003】例えば、図2の側面図に示すように、トル
クモータ等の一定の張力にて巻取り可能な巻取り手段を
持つ巻取り軸(1)を有し、かつパウダークラッチ等の
トルク制御手段により一定のバックテンションをかけつ
つウエブ状の合成樹脂フィルムの巻出しを可能にする巻
出し軸(2)を有し、かつこの二軸の間に合成樹脂フィ
ルム(9)の走行を規制する複数のアイドルローラ
(3、4)および張力を検知して巻取り軸(1)または
巻出し軸(2)に適宜フィードバックを行うための張力
検出器(5,6)を具備したテンションロール(7,
8)および合成樹脂フィルム(9)にそのフィルム
(9)の温度をコントロールし表面に膜を形成するため
の温調ドラム(10)、および電極(11)と複数のプ
ロセスガス噴出管(17、18)でなる成膜手段を配置
することにより巻出し軸(2)から所定の張力を付与さ
れつつ巻き出されるウエブ状の合成樹脂フィルム(9)
が、温調ドラム(10)上で、前記の成膜手段により合
成樹脂フィルム(9)の表面に膜を形成された後、所定
の張力を伴いつつ巻取り軸(1)にて巻き取られ、表面
に薄膜が形成されたフィルム(13)を得ることが出来
る仕組みになっていた。
For example, as shown in the side view of FIG. 2, a winding shaft (1) having winding means capable of winding with a constant tension such as a torque motor is provided, and a torque control such as a powder clutch is performed. Means for unwinding the web-shaped synthetic resin film while applying a constant back tension by means, and restricting the running of the synthetic resin film (9) between the two axes. A tension roll (7) provided with a plurality of idle rollers (3, 4) and tension detectors (5, 6) for detecting tension and performing appropriate feedback to the winding shaft (1) or the unwinding shaft (2). ,
8) and a synthetic resin film (9), a temperature control drum (10) for controlling the temperature of the film (9) to form a film on the surface, and an electrode (11) and a plurality of process gas injection tubes (17, The web-shaped synthetic resin film (9) which is unwound while applying a predetermined tension from the unwinding shaft (2) by disposing the film forming means (18).
After a film is formed on the surface of the synthetic resin film (9) on the temperature control drum (10) by the film forming means described above, the film is wound by the winding shaft (1) with a predetermined tension. Thus, a film (13) having a thin film formed on the surface can be obtained.

【0004】しかしながら、上記の図2に示すような真
空成膜装置(100)では以下のような問題を生じてい
た。すなわち、真空下においては、図5に示すように、
合成樹脂フィルム(9)の内部に含まれているガスが、
その表裏面から放出され、温調ドラム(10)と合成樹
脂フィルム(9)の間に放出ガス層(20)が形成され
るため、温調ドラム(10)と合成樹脂フィルム(9)
の間に不均一な浮きが出来てしまい、大気による熱伝達
が期待できない真空下においては成膜中の合成樹脂フィ
ルム(9)の温度分布を均一に調整できないものであっ
た。よって合成樹脂フィルム基板(9)面の薄膜が物理
的、化学的に不安定で膜厚も不均一となる危惧のあるも
のであった。さらに温調ドラム(10)表面と合成樹脂
フィルム(9)が成膜中に接するので合成樹脂フィルム
(9)に傷や変形を与えてしまうという問題があった。
[0004] However, the vacuum film forming apparatus (100) as shown in FIG. 2 has the following problems. That is, under vacuum, as shown in FIG.
The gas contained inside the synthetic resin film (9)
Since the gas is released from the front and back surfaces and a release gas layer (20) is formed between the temperature control drum (10) and the synthetic resin film (9), the temperature control drum (10) and the synthetic resin film (9)
In the vacuum where heat transfer by the atmosphere cannot be expected, the temperature distribution of the synthetic resin film (9) during film formation cannot be uniformly adjusted. Therefore, the thin film on the surface of the synthetic resin film substrate (9) is physically and chemically unstable, and there is a fear that the film thickness becomes uneven. Furthermore, since the surface of the temperature control drum (10) and the synthetic resin film (9) are in contact during film formation, there is a problem that the synthetic resin film (9) is damaged or deformed.

【0005】そこで、上記合成樹脂フィルム(9)の温
調ドラム(10)間での浮きと傷や変形の問題を解決す
るものとして、図3の側面図に示すように、例えば、図
2に示す温調ドラム(10)を排除し、反応蒸着室(7
0)内で成膜中に合成樹脂フィルム(9)が何にも接触
しない方法即ち図4の拡大側面図に示すように、合成樹
脂フィルム(9)の下部で、離れた位置から温調ドラム
に代わる平坦状のヒーター(19)で合成樹脂フィルム
(9)を加温し、上部にプロセスガス供給管(21)よ
り供給され噴射する複数のプロセスガス噴出管(17)
等でなる成膜手段を設けた仕組みの真空成膜装置(10
0)がある。
In order to solve the problem of floating of the synthetic resin film (9) between the temperature control drums (10), scratches and deformation, as shown in a side view of FIG. The temperature control drum (10) shown in FIG.
0) A method in which the synthetic resin film (9) does not come into contact with anything during film formation, that is, as shown in the enlarged side view of FIG. The synthetic resin film (9) is heated by a flat heater (19) in place of the above, and a plurality of process gas ejection pipes (17) supplied and ejected from the process gas supply pipe (21) above.
Vacuum deposition system (10
0).

【0006】しかしながら、図3に示す上記真空成膜装
置(100)では、放出ガスによる合成樹脂フィルム
(9)の浮きと傷や変形は防げるもののフィルムの温度
をコントロールするのに真空中のためヒーター(19)
の熱の輻射を利用するしかなく、加熱する場合はフィル
ム温度よりもヒーター(19)を高い温度まで上げなく
てはならない。よってより大きな電力を必要とする点や
目標の温度に到達するまでに長い時間を要する即ちエネ
ルギー消費量が大きくなるなどの問題があり、また冷却
に関してはほとんど期待できないのでフィルム面の温度
のコントロールに難点のあるものであった。更にこの方
法でもフィルム基板の温度分布を均一にするのにはヒー
ター自体の温度分布とフィルム基板との距離などに大き
く影響され温度分布のコントロールにも多大の難点があ
った。
However, the vacuum film forming apparatus (100) shown in FIG. 3 can prevent the synthetic resin film (9) from being lifted and damaged or deformed by the released gas, but it is in a vacuum to control the temperature of the film. (19)
In the case of heating, the heater (19) must be heated to a temperature higher than the film temperature. Therefore, there is a problem that a larger power is required and a longer time is required to reach a target temperature, that is, there is a problem such as an increase in energy consumption.Moreover, since cooling is hardly expected, it is difficult to control the temperature of the film surface. It was difficult. Furthermore, even in this method, the temperature distribution of the film substrate is greatly influenced by the temperature distribution of the heater itself and the distance from the film substrate, etc., and there is a great difficulty in controlling the temperature distribution.

【0007】[0007]

【発明が解決しようとする課題】本発明は、かかる従来
技術の問題点を解決するものであり、その課題とすると
ころは、化学蒸着法(CVD)等によりウエブ状合成樹
脂フィルム表面に薄膜を形成する真空成膜装置におい
て、合成樹脂フィルムに傷や変形を与えずに、かつ省エ
ネルギーで合成樹脂フィルム基板の温度分布および温度
を均一にコントロールし、物理的、化学的に安定で膜厚
も均一な薄膜を形成する真空成膜装置とそれを用いた成
膜方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and an object thereof is to form a thin film on the surface of a web-like synthetic resin film by a chemical vapor deposition method (CVD) or the like. In the vacuum deposition system to be formed, the temperature distribution and temperature of the synthetic resin film substrate are controlled uniformly with no energy and energy saving without causing any damage or deformation to the synthetic resin film, physically and chemically stable and uniform film thickness. It is an object of the present invention to provide a vacuum film forming apparatus for forming a thin film and a film forming method using the same.

【0008】[0008]

【課題を解決するための手段】本発明に於いて上記課題
を達成するために、まず請求項1の発明では、ウエブ状
基板の巻出し・巻取り室と成膜する反応蒸着室でなり、
該反応蒸着室内にプロセスガス噴出部と電極でなる成膜
手段と、該ウエブ状基板を加温する加温手段とを具備す
る真空成膜装置であって、前記ウエブ状基板の下部に所
定の間隔をおいて成膜手段が載置され、該成膜手段の下
部に加温手段が載置され、該加温手段の温度を調節する
温度調節機構が具備されてなることを特徴とする真空成
膜装置としたものである。
Means for Solving the Problems In order to achieve the above object in the present invention, first, according to the first aspect of the present invention, an unwinding / winding chamber for a web-like substrate and a reactive evaporation chamber for forming a film are provided.
A vacuum film forming apparatus comprising: a film forming unit including a process gas ejecting unit and an electrode; and a heating unit configured to heat the web-like substrate in the reaction deposition chamber. A vacuum, wherein a film forming means is mounted at intervals, a heating means is mounted below the film forming means, and a temperature adjusting mechanism for adjusting the temperature of the heating means is provided. This is a film forming apparatus.

【0009】また、請求項2の発明では、前記成膜手段
が、複数のプロセスガス噴出管を有するシャワーヘッド
電極であることを特徴とする請求項1記載の真空成膜装
置としたものである。
Further, in the invention according to claim 2, the film forming means is a shower head electrode having a plurality of process gas ejection pipes, wherein the vacuum film forming apparatus according to claim 1 is provided. .

【0010】また、請求項3の発明では、前記加温手段
が、平坦状ヒーターであることを特徴とする請求項1ま
たは2記載の真空成膜装置としたものである。
According to a third aspect of the present invention, in the vacuum film forming apparatus according to the first or second aspect, the heating means is a flat heater.

【0011】また、請求項4の発明では、前記温度調節
機構は、赤外線センサー付温度計を具備し、該赤外線セ
ンサー付温度計でウエブ状基板の表面温度を測定し、前
記加温手段を制御する機構であることを特徴とする請求
項1、2または3記載の真空成膜装置としたものであ
る。
Further, in the invention according to claim 4, the temperature control mechanism includes a thermometer with an infrared sensor, and measures the surface temperature of the web-like substrate with the thermometer with the infrared sensor to control the heating means. A vacuum film forming apparatus according to claim 1, 2 or 3, wherein

【0012】上記本発明の真空成膜装置によれば、加温
手段や成膜手段とウエブ状基板とは所定の間隔があり接
していないので、ウエブ状基板面の傷や変形を防止する
ことができる。また温度調節機構は、ウエブ状基板の表
面温度を赤外線センサー付温度計で測定し、その測定値
により平坦状ヒーターが所望の温度にコントロールされ
る。そのコントロールされたヒーターの熱が上部のシャ
ワーヘッド電極に伝達され、その複数のプロセスガス噴
出管(孔)を有するシャワーヘッド電極から所望の一定
温度に加温されたプロセスガスがウエブ状基板面に均一
に噴射されるとともにウエブ状基板の温度をコントロー
ルする。このサイクルを繰り返すことによって比較的短
時間に均一でかつ所望の一定温度にコントロールされた
ウエブ状基板となる真空成膜装置を提供することができ
る。
According to the vacuum film forming apparatus of the present invention, since the heating means and the film forming means are not in contact with the web-shaped substrate at a predetermined interval, it is possible to prevent the surface of the web-shaped substrate from being damaged or deformed. Can be. The temperature adjusting mechanism measures the surface temperature of the web-like substrate with a thermometer equipped with an infrared sensor, and the measured value controls the flat heater to a desired temperature. The heat of the controlled heater is transmitted to the upper showerhead electrode, and the process gas heated to a desired constant temperature from the showerhead electrode having the plurality of process gas ejection pipes (holes) is applied to the web-like substrate surface. It is sprayed uniformly and controls the temperature of the web-shaped substrate. By repeating this cycle, it is possible to provide a vacuum film forming apparatus that becomes a web-like substrate that is uniform and controlled at a desired constant temperature in a relatively short time.

【0013】また、請求項5の発明では、前記請求項
1、2、3または4記載の真空成膜装置を用いてウエブ
状基板表面に連続的に薄膜を形成することを特徴とする
成膜方法としたものである。
According to a fifth aspect of the present invention, a thin film is continuously formed on the surface of a web-like substrate by using the vacuum film forming apparatus according to the first, second, third, or fourth aspect. Method.

【0014】上記請求項5の発明によれば、均一で所望
の一定温度にコントロールされた真空成膜装置を用いる
ことによって、走行するウエブ状基板表面に、少ないエ
ネルギー量で連続的に、物理的、化学的に安定で膜厚も
均一な薄膜を形成する成膜方法を提供することができ
る。
According to the fifth aspect of the present invention, by using a vacuum film forming apparatus which is controlled uniformly and at a desired constant temperature, the surface of the moving web-like substrate can be physically and continuously applied with a small amount of energy. In addition, it is possible to provide a film forming method for forming a thin film which is chemically stable and has a uniform thickness.

【0015】[0015]

【発明の実施の形態】以下本発明の実施の形態を図面を
用いて説明する。本発明の真空成膜装置は、図3に示す
ように、例えばウエブ状合成樹脂フィルムの巻出し・巻
取り室(60)と成膜する反応蒸着室(70)でなり、
その反応蒸着室(70)内に、図1の拡大側面図に示す
ように、プロセスガス噴出部と電極でなる成膜手段とし
て、プロセスガス供給管(21)より供給され噴射する
複数のプロセスガス噴出管(17)を有するシャワーヘ
ッド電極(22)と、ウエブ状合成樹脂フィルム(9)
を加温する加温手段としての平坦状のヒーター(19)
を具備し、前記ウエブ状合成樹脂フィルム(9)の下部
に20mm程度の間隔をおいて成膜手段である前記シャ
ワーヘッド電極(22)が載置され、そのシャワーヘッ
ド電極(22)の下部に前記加温手段である平坦状のヒ
ーター(19)が載置されているものであり、その平坦
状のヒーター(19)の温度を調節する温度調節機構が
具備されてなることを特徴とするものである。
Embodiments of the present invention will be described below with reference to the drawings. As shown in FIG. 3, the vacuum film forming apparatus of the present invention includes, for example, an unwinding / winding chamber (60) for a web-like synthetic resin film and a reaction vapor deposition chamber (70) for forming a film.
As shown in an enlarged side view of FIG. 1, a plurality of process gases supplied and injected from a process gas supply pipe (21) are formed in the reaction evaporation chamber (70) as a film forming means including a process gas ejection part and an electrode. Shower head electrode (22) having jet pipe (17) and web-like synthetic resin film (9)
Heater (19) as a heating means for heating the water
The showerhead electrode (22), which is a film forming means, is placed below the web-like synthetic resin film (9) at an interval of about 20 mm, and is provided below the showerhead electrode (22). A flat heater (19) serving as the heating means is mounted, and a temperature adjusting mechanism for adjusting the temperature of the flat heater (19) is provided. It is.

【0016】上記温度調節機構は、ウエブ状合成樹脂フ
ィルム(9)の表面温度を測定する赤外線センサー付温
度計(図示せず)を具備してなるもので、その赤外線セ
ンサー付温度計によりウエブ状合成樹脂フィルム(9)
の表面温度を測定し、その測定値により平坦状のヒータ
ー(19)を所望の温度にコントロールするものであ
る。
The temperature control mechanism comprises a thermometer (not shown) with an infrared sensor for measuring the surface temperature of the web-shaped synthetic resin film (9). Synthetic resin film (9)
Is measured, and the flat heater (19) is controlled to a desired temperature based on the measured value.

【0017】さらに、上記温度調節機構は、上記でコン
トロールされたヒーター(19)の熱が上部のシャワー
ヘッド電極(22)に伝達され、その複数のプロセスガ
ス噴出管(孔)(17)を有するシャワーヘッド電極
(22)から所望の一定温度に加温されたプロセスガス
が対向電極(24)に向かって噴射され、結果的にはウ
エブ状合成樹脂フィルム(9)面に均一に噴射されるの
で走行するウエブ状合成樹脂フィルム(9)の温度をコ
ントロールするものである。このサイクルを繰り返すこ
とによって少ないエネルギー量で比較的短時間に均一で
所望の一定温度にコントロールされたウエブ状の合成樹
脂フィルム(9)となる機構(仕組み)である。
Further, the temperature control mechanism has a plurality of process gas ejection pipes (holes) (17) for transferring the heat of the heater (19) controlled as described above to the upper shower head electrode (22). The process gas heated to a desired constant temperature is sprayed from the shower head electrode (22) toward the counter electrode (24), and as a result, is uniformly sprayed on the surface of the web-shaped synthetic resin film (9). This is for controlling the temperature of the running web-shaped synthetic resin film (9). By repeating this cycle, it is a mechanism (mechanism) that becomes a web-shaped synthetic resin film (9) that is uniform and controlled at a desired constant temperature in a relatively short time with a small amount of energy.

【0018】上記温度コントロールされる平坦状のヒー
ター(19)としては、ステンレス製あるいはセラミク
ッスヒーターが好ましい。これは真空中で合成樹脂フィ
ルム(9)からの放出ガスが少ない点と、ヒーター自体
が腐食しないと言う点で成膜時に余分な反応物を出さな
いことから好適に使用できる。
As the flat heater (19) whose temperature is controlled, a stainless steel heater or a ceramic heater is preferable. This method can be suitably used because the amount of gas released from the synthetic resin film (9) in a vacuum is small and the heater itself does not corrode.

【0019】また、上記合成樹脂フィルム(9)の温度
を測定する赤外線センサー付温度計としては、非接触型
・赤外線センサー付温度計が好適に使用出来る。これは
成膜されたフィルムの面などに温度計自体が触れること
なく使用できるので、傷を付けることなく巻取り可能と
なるからである。
As a thermometer with an infrared sensor for measuring the temperature of the synthetic resin film (9), a non-contact thermometer with an infrared sensor can be suitably used. This is because the thermometer itself can be used without touching the surface of the formed film or the like, so that the film can be wound without being damaged.

【0020】ただし、実際に温度を測定できれば合成樹
脂フィルム(9)の裏面から測定して、裏面の傷などを
度外視すれば、接触型の温度計を使用してもある程度の
効果が期待できることは言うまでもない。
However, if the temperature can be actually measured, if the temperature is measured from the back surface of the synthetic resin film (9) and the scratches on the back surface are ignored, a certain effect can be expected even if a contact-type thermometer is used. Needless to say.

【0021】また、本発明の真空成膜装置を構成する成
膜手段であるシャワーヘッド電極(22)は、表面に複
数のプロセスガス噴出管(17)すなわち孔が穿設され
ているもので、この孔の数や大きさ、さらには位置を変
化させ積極的に熱伝達を利用することで意図的に温度分
布を変えることが可能である。
The shower head electrode (22), which is a film forming means constituting the vacuum film forming apparatus of the present invention, has a plurality of process gas ejection tubes (17), that is, holes formed in the surface thereof. It is possible to intentionally change the temperature distribution by changing the number, size, and position of the holes, and positively utilizing heat transfer.

【0022】また、本発明の真空成膜装置に適用される
ウエブ状基板としては、合成樹脂フィルムで、例えばポ
リエチレンテレフタレートフィルムやポリエステルエー
テルフィルム、ポリアリレートフィルム等のポリエステ
ルフィルム、ポリイミドフィルム、ポリエーテルスルホ
ンフィルム、ポリエーテルイミドフィルム、ポリカーボ
ネートフィルム、フッ素樹脂フィルム、トリアセテート
フィルムなど比較的耐熱性のあるフィルムが挙げられる
が、これらに限定するものではない。
The web-shaped substrate applied to the vacuum film forming apparatus of the present invention is a synthetic resin film, for example, a polyester film such as a polyethylene terephthalate film, a polyester ether film, a polyarylate film, a polyimide film, a polyether sulfone. Examples include, but are not limited to, films having relatively heat resistance, such as films, polyetherimide films, polycarbonate films, fluororesin films, and triacetate films.

【0023】本発明の真空成膜装置に係わる温度調節機
構は、プロセスガスまたはそれと不活性ガスとの混合気
体を利用する化学蒸着法(CVD法)、プラズマ放電中
の気体反応を利用するプラズマCVD法への適用のほ
か、一般的な真空蒸着法への適用も可能である。
The temperature control mechanism according to the vacuum film forming apparatus of the present invention includes a chemical vapor deposition method (CVD method) using a process gas or a mixed gas thereof and an inert gas, and a plasma CVD method using a gas reaction during plasma discharge. In addition to application to the method, application to a general vacuum deposition method is also possible.

【0024】[0024]

【発明の効果】本発明は以上の構成であるから、下記に
示す如き効果がある。即ち、反応蒸着室内にプロセスガ
ス噴出部と電極でなる成膜手段と、前記ウエブ状基板を
加温する加温手段とを具備する真空成膜装置において、
前記ウエブ状基板の下部に所定の間隔をおいて成膜手段
としてシャワーヘッド電極を載置し、該シャワーヘッド
電極の下部に加温手段としてヒーターを載置し、該ヒー
ターの温度を調節する温度調節機構を具備し、この温度
調節機構を赤外線センサー付温度計でウエブ状基板の表
面温度を測定して前記ヒーターを制御する機構としたの
で、ウエブ状基板に傷や変形を与えずに、比較的短時間
に均一でかつ所望の一定温度にコントロールされたウエ
ブ状基板となる真空成膜装置を提供することができる。
As described above, the present invention has the following effects. That is, in a vacuum film forming apparatus including a film forming unit including a process gas ejection unit and an electrode in a reaction deposition chamber, and a heating unit configured to heat the web-like substrate,
A showerhead electrode is mounted as a film forming means at a predetermined interval below the web-like substrate, and a heater is mounted as a heating means below the showerhead electrode, and a temperature for adjusting the temperature of the heater is set. The temperature control mechanism is equipped with a thermometer equipped with an infrared sensor to control the heater by measuring the surface temperature of the web-like substrate. It is possible to provide a vacuum film forming apparatus which is a web-shaped substrate which is uniform in a short time and controlled to a desired constant temperature.

【0025】また、上記の真空成膜装置を用いてウエブ
状基板表面に連続的に薄膜を形成する成膜方法によっ
て、省エネルギーで、ウエブ状基板の温度分布および温
度を均一にコントロールし、よって物理的、化学的に安
定で膜厚も均一な薄膜を形成する成膜方法とすることが
できる。
Further, by the film forming method of continuously forming a thin film on the surface of the web-like substrate by using the above-mentioned vacuum film-forming apparatus, the temperature distribution and the temperature of the web-like substrate can be controlled uniformly with energy saving, and the physical A film formation method for forming a thin film having a uniform thickness, which is chemically and chemically stable.

【0026】また付随的効果として、従来、プロセスガ
スとして使用困難であった蒸気圧の低い材料の使用が可
能となった。
As an additional effect, it has become possible to use a material having a low vapor pressure, which has conventionally been difficult to use as a process gas.

【0027】さらに、プラズマCVDの場合、ウエブ状
基板の温度分布とプロセス空間のガス温度分布が近似す
ることから、基板の温度分布を測定することによって従
来困難であったプラズマ中のガス分布をも測定すること
が可能となった。
Furthermore, in the case of plasma CVD, since the temperature distribution of the web-like substrate and the gas temperature distribution in the process space are close to each other, the gas distribution in the plasma, which has been conventionally difficult to measure, can be obtained by measuring the temperature distribution of the substrate. It became possible to measure.

【0028】従って本発明は、真空中にて基板表面など
に薄膜を形成する真空成膜装置、特に化学蒸着法(CV
D)等によりウエブ状合成樹脂フィルム表面に薄膜を形
成する真空成膜装置として、優れた実用上の効果を発揮
する。
Accordingly, the present invention is directed to a vacuum film forming apparatus for forming a thin film on a substrate surface or the like in a vacuum, in particular, a chemical vapor deposition (CV) method.
As a vacuum film forming apparatus for forming a thin film on the surface of a web-like synthetic resin film by D) or the like, it exhibits excellent practical effects.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の真空成膜装置の一実施の形態を示すも
ので、それを構成する成膜手段の拡大側面図である。
FIG. 1 shows an embodiment of a vacuum film forming apparatus of the present invention, and is an enlarged side view of a film forming means constituting the apparatus.

【図2】従来の真空成膜装置の一事例を説明する側面図
である。
FIG. 2 is a side view illustrating an example of a conventional vacuum film forming apparatus.

【図3】従来の真空成膜装置の他の事例を説明する側面
図である。
FIG. 3 is a side view illustrating another example of a conventional vacuum film forming apparatus.

【図4】従来の図3に示す真空成膜装置の一事例を説明
する部分拡大側面図である。
4 is a partially enlarged side view illustrating an example of the conventional vacuum film forming apparatus shown in FIG.

【図5】従来の図2に示す真空成膜装置の一事例を説明
する部分拡大側面図である。
5 is a partially enlarged side view illustrating an example of the conventional vacuum film forming apparatus shown in FIG.

【符号の説明】[Explanation of symbols]

1‥‥巻取り軸 2‥‥巻出し軸 3,4‥‥アイドロール 5,6‥‥張力検出器 7,8‥‥テンションローラ 9‥‥合成樹脂フィルム 10‥‥温調ドラム 11‥‥電極 13‥‥ウエブ状成膜済みのフィルム 14,15‥‥ニップロール 16‥‥ダンサロール 17,18‥‥プロセスガス噴出管 19‥‥ヒーター 20‥‥放出ガス層 21‥‥プロセスガス供給管 22‥‥シャワーヘッド電極 24‥‥対向電極 60‥‥巻出し・巻取り室 70‥‥反応蒸着室 100‥‥真空成膜装置 1 roll-up shaft 2 roll-up shaft 3, 4 idle roll 5, 6 tension detector 7, 8 tension roller 9 synthetic resin film 10 temperature control drum 11 electrode 13 Web-formed film 14, 15 Nip roll 16 Dancer roll 17, 18 Process gas ejection pipe 19 Heater 20 Emission gas layer 21 Process gas supply pipe 22 Shower head electrode 24 ° Counter electrode 60 ° Unwinding / winding room 70 ° Reaction vapor deposition room 100 ° Vacuum film forming device

フロントページの続き (72)発明者 山本 恭市 東京都台東区台東1丁目5番1号 凸版印 刷株式会社内 Fターム(参考) 4F006 AA18 AA35 AA36 AA39 AA40 AB61 DA01 4K030 CA07 FA10 HA13 JA10 KA01 KA08 KA14 KA24 KA39 KA41Continuation of the front page (72) Inventor Kyo Yamamoto 1-5-1, Taito, Taito-ku, Tokyo Letterpress Printing Co., Ltd. F-term (reference) 4F006 AA18 AA35 AA36 AA39 AA40 AB61 DA01 4K030 CA07 FA10 HA13 JA10 KA01 KA08 KA14 KA24 KA39 KA41

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】ウエブ状基板の巻出し・巻取り室と成膜す
る反応蒸着室でなり、該反応蒸着室内にプロセスガス噴
出部と電極でなる成膜手段と、前記ウエブ状基板を加温
する加温手段とを具備する真空成膜装置であって、前記
ウエブ状基板の下部に所定の間隔をおいて成膜手段が載
置され、該成膜手段の下部に加温手段が載置され、該加
温手段の温度を調節する温度調節機構が具備されてなる
ことを特徴とする真空成膜装置。
1. A web deposition and unwinding chamber and a reaction vapor deposition chamber for forming a film, a film forming means comprising a process gas ejection section and an electrode in the reaction vapor deposition chamber, and heating the web substrate. A vacuum film forming apparatus, comprising: a heating unit that performs heating; and a heating unit that is mounted below the film-shaped substrate at a predetermined interval. And a temperature adjusting mechanism for adjusting the temperature of the heating means.
【請求項2】前記成膜手段は、複数のプロセスガス噴出
管を有するシャワーヘッド電極であることを特徴とする
請求項1記載の真空成膜装置。
2. A vacuum film forming apparatus according to claim 1, wherein said film forming means is a shower head electrode having a plurality of process gas ejection pipes.
【請求項3】前記加温手段は、平坦状ヒーターであるこ
とを特徴とする請求項1または2記載の真空成膜装置。
3. The vacuum film forming apparatus according to claim 1, wherein said heating means is a flat heater.
【請求項4】前記温度調節機構は、赤外線センサー付温
度計を具備し、該赤外線センサー付温度計でウエブ状基
板の表面温度を測定し、前記加温手段を制御する機構で
あることを特徴とする請求項1、2または3記載の真空
成膜装置。
4. The temperature control mechanism includes a thermometer with an infrared sensor, and measures the surface temperature of the web-like substrate with the thermometer with the infrared sensor and controls the heating means. The vacuum film forming apparatus according to claim 1, 2, or 3.
【請求項5】前記請求項1、2、3または4記載の真空
成膜装置を用いてウエブ状基板表面に連続的に薄膜を形
成することを特徴とする成膜方法。
5. A film forming method, wherein a thin film is continuously formed on the surface of a web-like substrate using the vacuum film forming apparatus according to claim 1, 2, 3 or 4.
JP32954599A 1999-11-19 1999-11-19 Vacuum film forming apparatus and film forming method using the same Expired - Fee Related JP3885431B2 (en)

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Publication Number Publication Date
JP2001152346A true JP2001152346A (en) 2001-06-05
JP3885431B2 JP3885431B2 (en) 2007-02-21

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102002685A (en) * 2009-09-01 2011-04-06 东京毅力科创株式会社 Film formation apparatus and film formation method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102002685A (en) * 2009-09-01 2011-04-06 东京毅力科创株式会社 Film formation apparatus and film formation method

Also Published As

Publication number Publication date
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