JP2001149780A - Method for manufacturing ammonia and ammonia synthesizing gas - Google Patents

Method for manufacturing ammonia and ammonia synthesizing gas

Info

Publication number
JP2001149780A
JP2001149780A JP2000328905A JP2000328905A JP2001149780A JP 2001149780 A JP2001149780 A JP 2001149780A JP 2000328905 A JP2000328905 A JP 2000328905A JP 2000328905 A JP2000328905 A JP 2000328905A JP 2001149780 A JP2001149780 A JP 2001149780A
Authority
JP
Japan
Prior art keywords
ammonia
catalyst
ruthenium
carrier
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000328905A
Other languages
Japanese (ja)
Inventor
Claus J H Jacobsen
クラウス・イエット・ハー・ヤコブセン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Topsoe AS
Original Assignee
Haldor Topsoe AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Haldor Topsoe AS filed Critical Haldor Topsoe AS
Publication of JP2001149780A publication Critical patent/JP2001149780A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01CAMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00Ammonia; Compounds thereof
    • C01C1/02Preparation, purification or separation of ammonia
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01CAMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00Ammonia; Compounds thereof
    • C01C1/02Preparation, purification or separation of ammonia
    • C01C1/04Preparation of ammonia by synthesis in the gas phase
    • C01C1/0405Preparation of ammonia by synthesis in the gas phase from N2 and H2 in presence of a catalyst
    • C01C1/0411Preparation of ammonia by synthesis in the gas phase from N2 and H2 in presence of a catalyst characterised by the catalyst
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/38Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
    • B01J23/40Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
    • B01J23/46Ruthenium, rhodium, osmium or iridium
    • B01J23/462Ruthenium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/24Nitrogen compounds
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/52Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts

Abstract

PROBLEM TO BE SOLVED: To provide an ammonia synthesizing catalyst that has an improved carrier of boron nitride and/or silicon nitride as a carrier material and is based on ruthenium. SOLUTION: This method for manufacturing ammonia from an ammonia synthesizing gas comprises contacting the catalyst, in which ruthenium deposited on the carrier of boron nitride and/or silicon nitride is contained as a catalyst active material, with the ammonia synthesizing gas under ammonia synthesizing conditions.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明が属する技術分野】本発明は、金属窒化物キャリ
ア上に支持された触媒活性材料としてのルテニウムを含
むアンモニア合成触媒とアンモニア合成ガスとを接触さ
せることによってアンモニアを合成する方法に関する。
TECHNICAL FIELD The present invention relates to a method for synthesizing ammonia by contacting an ammonia synthesis gas containing ruthenium as a catalytically active material supported on a metal nitride carrier with an ammonia synthesis gas.

【0002】[0002]

【従来の技術】アンモニア合成ガスからのアンモニアの
合成に使用されるルテニウムに基づく触媒は当業界にお
いて公知である(米国特許第4,600,571 号、特開平9-16
8739号及びイギリス特許出願公開第2,033,766 号)。
BACKGROUND OF THE INVENTION Ruthenium-based catalysts used for the synthesis of ammonia from ammonia synthesis gas are known in the art (US Pat. No. 4,600,571;
8739 and United Kingdom Patent Application Publication No. 2,033,766).

【0003】高価なルテニウムの必要量をできるだけ低
く抑えるために、このような触媒は、通常、活性ルテニ
ウム粒子の利用可能な表面積を最大限に高める目的でキ
ャリア材料により支持する。
[0003] In order to keep the required amount of expensive ruthenium as low as possible, such catalysts are usually supported by a carrier material in order to maximize the available surface area of the active ruthenium particles.

【0004】接触的アンモニア合成に適当なものとして
幾つかの支持体が提案されている。このような材料には
MgO 、Al2O3 及びMgAl2O4 などがある。現在では、最も
活性の高いルテニウム触媒は、キャリア材料としての黒
鉛化した炭素上に支持されたものである。
Several supports have been proposed as being suitable for catalytic ammonia synthesis. Such materials include
MgO, and the like Al 2 O 3 and MgAl 2 O 4. At present, the most active ruthenium catalysts are those supported on graphitized carbon as carrier material.

【0005】しかし、炭素に基づく支持体の使用には、
これが工業的な条件下では水素化されやすいという重大
な欠点がある。炭素系支持体はゆっくりとメタンに変化
し、そのため支持体が次第に消耗し、最後には操業が困
難となる。
However, the use of carbon-based supports involves:
This has the serious disadvantage that it is susceptible to hydrogenation under industrial conditions. The carbon-based support slowly converts to methane, which gradually depletes the support and makes operation difficult in the end.

【0006】[0006]

【発明が解決しようとする課題及び課題を解決するため
の手段】本発明の一般的な課題は、支持材料として窒化
ホウ素及び/または窒化ケイ素からなる改善されたキャ
リアを有する、ルテニウムに基づくアンモニア合成触媒
を提供することである。窒化物は炭素と等電子である。
窒化ホウ素及び窒化ケイ素は双方とも、炭素と同様に、
幾つかの同素体として存在する。これらの同素体のうち
の一つは、通常ホワイトグラファイトと呼ばれる黒鉛性
形態のものである。炭素とは異なり、窒化ホウ素及び窒
化ケイ素は、工業的なアンモニア合成条件下で熱力学的
に安定である。
SUMMARY OF THE INVENTION A general object of the present invention is to provide a ruthenium-based ammonia synthesis with an improved carrier comprising boron nitride and / or silicon nitride as a support material. It is to provide a catalyst. Nitride is isoelectronic with carbon.
Both boron nitride and silicon nitride, like carbon,
There are several allotropes. One of these allotropes is in a graphitic form, commonly called white graphite. Unlike carbon, boron nitride and silicon nitride are thermodynamically stable under industrial ammonia synthesis conditions.

【0007】BN及びSi3N4 の双方とも、高表面積の材料
(>25m2/g) として得ることができ、また当業界において
公知の方法によって適当なキャリアに成形することがで
きる。
[0007] Both BN and Si 3 N 4 are high surface area materials
(> 25 m 2 / g) and can be formed into a suitable carrier by methods known in the art.

【0008】BNまたはSi3N4 上に支持された、促進(pro
motion) されたルテニウム触媒は、接触アンモニア合成
の間、完全に安定している。
A promoter (pro) supported on BN or Si 3 N 4
The motioned ruthenium catalyst is completely stable during catalytic ammonia synthesis.

【0009】それゆえ、本発明は、アンモニア合成にお
いて、触媒活性材料としてルテニウムを有するアンモニ
ア合成触媒に、触媒キャリアとして窒化ホウ素及び/ま
たは窒化ケイ素を使用する。
Therefore, the present invention uses boron nitride and / or silicon nitride as a catalyst carrier in an ammonia synthesis catalyst having ruthenium as a catalytically active material in ammonia synthesis.

【0010】BN及びSi3N4 は、商業的な製品として入手
することもできるし、または業界公知の方法によって製
造することができる。これらの窒化物支持体の表面積は
好ましくは25m2/gを超える。また、これらの窒化物支持
体は、アンモニアによって処理される間に窒化物に変化
するSi及びB前駆体からも得られる。
[0010] BN and Si 3 N 4 can be obtained as commercial products or can be made by methods known in the art. The surface area of these nitride supports is preferably greater than 25 m 2 / g. These nitride supports are also obtained from Si and B precursors that change to nitride while being treated with ammonia.

【0011】ルテニウムは、慣用の方法、例えば適当な
含ルテニウム化合物、例えば塩化物または酢酸塩を用い
て含浸処理することによって支持体に導入する。
The ruthenium is introduced into the support in a conventional manner, for example by impregnation with a suitable ruthenium-containing compound, for example a chloride or acetate.

【0012】促進処理の前に、触媒を、還元性ガス、例
えば水素または合成ガスで処理することによって還元す
ることができる。
[0012] Prior to the accelerated treatment, the catalyst can be reduced by treating it with a reducing gas, such as hydrogen or synthesis gas.

【0013】促進処理は、促進剤の塩を含浸させること
によって行うことができる。促進剤は、公知のアンモニ
ア合成触媒用促進剤、すなわちアルカリまたはアルカリ
土類金属からあるいは希土類金属から選択される。
The accelerating treatment can be carried out by impregnating a salt of an accelerating agent. The promoter is selected from the known promoters for ammonia synthesis catalysts, ie alkali or alkaline earth metals or rare earth metals.

【0014】各促進剤は、順次または一緒に導入するこ
とができる。
The accelerators can be introduced sequentially or together.

【0015】[0015]

【実施例】例1 触媒の調製 窒化ホウ素支持体(六方晶系、表面積85m2/g、粉末X線
回折で測定した結晶サイズ 7.5nm)を、ニトロソ硝酸ル
テニウムで含浸処理し、5重量%のRu濃度を得る。この
含浸処理したサンプルを80℃で乾燥しそして450 ℃で二
水素(dihydrogen)の流れ中で還元する。このサンプルに
“5RuBN ”と標付けする。
EXAMPLE 1 Preparation of Catalyst A boron nitride support (hexagonal, surface area 85 m 2 / g, crystal size 7.5 nm as measured by powder X-ray diffraction) was impregnated with ruthenium nitroso nitrate and 5% by weight. Obtain Ru concentration. The impregnated sample is dried at 80 ° C. and reduced at 450 ° C. in a stream of dihydrogen. Label this sample "5RuBN".

【0016】7重量%のRuを含む他のサンプルを同様に
して作製する。このサンプルには“7RuBN ”と標付けす
る。その触媒密度は約1.5 g/ml である。 例2 セシウムによる触媒の促進 5RuBN 及び7RuBN を硝酸セシウムの水溶液で含浸処理
し、3重量%のセシウム濃度を得る。これらのサンプル
にそれぞれ3Cs5RuBN及び3Cs7RuBNと標付けする。 例3 バリウムによる触媒の促進 5RuBN 及び7RuBN を硝酸バリウムの水溶液で含浸処理
し、3重量%のバリウム濃度を得る。これらのサンプル
にそれぞれ3Ba5RuBN及び3Ba7RuBNと標付けする。 例4 触媒の試験 上記触媒を、100bar及び400 ℃で運転した恒温プラグ流
れ(plug flow) 反応器中で試験する。入口ガスは、二水
素/二窒素の3:1 混合物中に4.5 %のアンモニアを含
む。その流れは、出口において12%のアンモニアを得る
ために調節する。これらの条件下に、上記触媒は、一時
間、触媒1g当たり生産されるアンモニアのmlとして表
される異なる率でアンモニアを生産する。 触媒 ml NH3/(g4h) 5RuBN 140 7RuBN 190 3Cs5RuBN 1150 3Cs7RuBN 1320 3Ba5RuBN 4600 3Ba7RuBN 4930 例5 触媒の熱安定性 触媒の安定性を評価するために、3Ba5RuBN及び3Ba7RuBN
を上記反応器中550 ℃で1000時間加熱する。これらの条
件下に、アンモニアの出口濃度は約7.0 %である。この
処理の後、これらの触媒を再び試験する。 触媒 ml NH3/(g4h) 3Ba5RuBN 4580 3Ba7RuBN 4960 例6 触媒の失活及び再活性化 失活後に触媒を再活性化できるかどうかを調べるため
に、例5の触媒(3Ba5RuBN) を、N2中で10時間、1000pp
m のO2で室温で処理し、次いで周囲雰囲気に曝した。次
に、これを再び反応器に入れ、そして同じ条件下に試験
した。 触媒 ml NH3/(g4h) 3Ba5RuBN 4610
Another sample containing 7% by weight of Ru is prepared in a similar manner. This sample is labeled “7RuBN”. Its catalyst density is about 1.5 g / ml. Example 2 Catalyst promotion by cesium 5RuBN and 7RuBN are impregnated with an aqueous solution of cesium nitrate to obtain a cesium concentration of 3% by weight. These samples are labeled 3Cs5RuBN and 3Cs7RuBN, respectively. Example 3 Promoting the catalyst with barium 5RuBN and 7RuBN are impregnated with an aqueous solution of barium nitrate to obtain a barium concentration of 3% by weight. These samples are labeled 3Ba5RuBN and 3Ba7RuBN, respectively. Example 4 Catalyst Testing The above catalyst is tested in a constant temperature plug flow reactor operating at 100 bar and 400 ° C. The inlet gas contained 4.5% ammonia in a 3: 1 mixture of dihydrogen / dinitrogen. The flow is adjusted to obtain 12% ammonia at the outlet. Under these conditions, the catalyst produces ammonia at different rates, expressed as ml of ammonia produced per gram of catalyst for one hour. Catalyst ml NH 3 / (g 4 h) 5RuBN 140 7RuBN 190 3Cs5RuBN 1150 3Cs7RuBN 1320 3Ba5RuBN 4600 3Ba7RuBN 4930Example 5 Thermal stability of catalyst
Is heated at 550 ° C. for 1000 hours in the above reactor. Under these conditions, the outlet concentration of ammonia is about 7.0%. After this treatment, the catalysts are tested again. Catalyst ml NH 3 / (g 4 h) 3Ba5RuBN 4580 3Ba7RuBN 4960 Example 6 Deactivation and Reactivation of Catalyst To determine whether the catalyst can be reactivated after deactivation, the catalyst of Example 5 (3Ba5RuBN) was converted to N 2 hours for 10 hours, 1000pp
m 2 O 2 at room temperature and then exposed to the ambient atmosphere. It was then put back into the reactor and tested under the same conditions. Catalyst ml NH 3 / (g 4 h) 3Ba5RuBN 4610

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 窒化ホウ素及び/または窒化ケイ素のキ
ャリアに支持された、触媒活性材料としてのルテニウム
を含んでなる触媒を、アンモニア生成条件下にアンモニ
ア合成ガスと接触させることによって、アンモニア合成
ガスからアンモニアを製造する方法。
1. A method comprising the steps of: contacting a catalyst comprising ruthenium as a catalytically active material, supported on a carrier of boron nitride and / or silicon nitride, with an ammonia synthesis gas under conditions for producing ammonia, from the ammonia synthesis gas. A method for producing ammonia.
【請求項2】 窒化ホウ素及び/または窒化ケイ素上に
支持されたルテニウムを含んでなる、アンモニア合成ガ
スからのアンモニアの合成に活性を示す触媒。
2. A catalyst active in the synthesis of ammonia from an ammonia synthesis gas, comprising ruthenium supported on boron nitride and / or silicon nitride.
JP2000328905A 1999-10-29 2000-10-27 Method for manufacturing ammonia and ammonia synthesizing gas Withdrawn JP2001149780A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16215199P 1999-10-29 1999-10-29
US60/162151 1999-10-29

Publications (1)

Publication Number Publication Date
JP2001149780A true JP2001149780A (en) 2001-06-05

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Country Status (13)

Country Link
US (2) US6479027B1 (en)
EP (1) EP1095906B1 (en)
JP (1) JP2001149780A (en)
KR (1) KR20010051302A (en)
CN (1) CN1170770C (en)
AT (1) ATE285992T1 (en)
AU (1) AU779326B2 (en)
CA (1) CA2324328C (en)
DE (1) DE60017055T2 (en)
MX (1) MXPA00010606A (en)
RU (1) RU2247600C2 (en)
TW (1) TWI225035B (en)
ZA (1) ZA200006022B (en)

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JPWO2018030394A1 (en) * 2016-08-08 2019-04-18 国立大学法人東京工業大学 Method for producing catalyst for ammonia synthesis and method for producing ammonia
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JP7427797B2 (en) 2020-05-07 2024-02-05 コリア・インスティテュート・オブ・サイエンス・アンド・テクノロジー A catalyst in which a catalytic metal is supported on a support with a hexagonal crystal structure, and a method for producing the same
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