JP2001148381A5 - - Google Patents
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- JP2001148381A5 JP2001148381A5 JP2000271569A JP2000271569A JP2001148381A5 JP 2001148381 A5 JP2001148381 A5 JP 2001148381A5 JP 2000271569 A JP2000271569 A JP 2000271569A JP 2000271569 A JP2000271569 A JP 2000271569A JP 2001148381 A5 JP2001148381 A5 JP 2001148381A5
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- JP
- Japan
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000271569A JP2001148381A (ja) | 1999-09-07 | 2000-09-07 | 絶縁膜の形成方法及びその装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25334899 | 1999-09-07 | ||
JP11-253348 | 1999-09-07 | ||
JP2000271569A JP2001148381A (ja) | 1999-09-07 | 2000-09-07 | 絶縁膜の形成方法及びその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001148381A JP2001148381A (ja) | 2001-05-29 |
JP2001148381A5 true JP2001148381A5 (sl) | 2007-12-20 |
Family
ID=26541154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000271569A Pending JP2001148381A (ja) | 1999-09-07 | 2000-09-07 | 絶縁膜の形成方法及びその装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001148381A (sl) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7517751B2 (en) | 2001-12-18 | 2009-04-14 | Tokyo Electron Limited | Substrate treating method |
JP2005203730A (ja) | 2003-12-18 | 2005-07-28 | Seiko Epson Corp | 絶縁膜、半導体素子、電子デバイスおよび電子機器 |
JP4511307B2 (ja) | 2004-02-10 | 2010-07-28 | セイコーエプソン株式会社 | ゲート絶縁膜、半導体素子、電子デバイスおよび電子機器 |
JP4992957B2 (ja) * | 2004-02-10 | 2012-08-08 | セイコーエプソン株式会社 | 絶縁膜、半導体素子、電子デバイスおよび電子機器 |
JP2015103551A (ja) * | 2013-11-21 | 2015-06-04 | 旭化成エレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP6573578B2 (ja) | 2016-05-31 | 2019-09-11 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
TWI764068B (zh) * | 2019-01-11 | 2022-05-11 | 日商國際電氣股份有限公司 | 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式 |
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- 2000-09-07 JP JP2000271569A patent/JP2001148381A/ja active Pending