JP2001144346A - Magnetoresistive effect element, manufacturing method therefor, magnetoresistance detection system, and magnetic recording system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a short circuit from occurring between a lower electrode layer and an upper electrode layer in the manufacturing process of a magnetoresistive effect element. SOLUTION: A magnetoresistive effect element 2 is equipped with a lower electrode layer 8 formed on a lower shield 4 through the intermediary of a lower gap layer 6, a magnetoresistive effect film 10 formed in a region of the lower electrode layer 8, and an upper electrode layer 12 formed above the lower electrode layer 8 extending, so as to make a part of its under surface come into contact with the top surface of the magnetoresistive effect film 10, where a layer 16 is formed on the top surface of the lower gap layer 6 coming into contact with the edge 20 of the lower electrode layer 8 and surrounding the lower electrode layer 8 so as to protect the lower electrode layer 8 against corrosion or separation. Therefore, the lower electrode layer 8 is patterned by the use of photoresist, then the layer 16 which protects the lower electrode layer 8 against corrosion or separation is formed before the photoresist is removed, by which the edge 20 of the lower electrode layer 8 is covered with the layer 16, the edge 20 of the lower electrode layer 8 can be protected against corrosion, even if the photoresist is removed by the use of a remover solution, and a short circuit can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element whose resistance value changes in accordance with the strength of a magnetic field, a method of manufacturing the same, a magnetoresistive detection system using the magnetoresistive element, and the magnetoresistive element. The present invention relates to a magnetic recording system including a detection system.

[0002]

2. Description of the Related Art In a hard disk drive or the like constituting a computer, a magneto-resistive (MR) sensor (also called a magneto-resistive head) has been conventionally used, and the magneto-resistive sensor is used to record data on a magnetic recording medium at a high density. It is possible to read information. A magnetoresistive sensor is composed of a magnetoresistive element, and the resistance of the magnetoresistive element changes depending on the strength and direction of the surrounding magnetic field. As a result, the information recorded on the magnetic recording medium can be obtained as a current signal.

More specifically, a magnetoresistive element operates based on the anisotropic magnetoresistance (AMR) effect, and one component of the resistance of the magnetoresistive element is determined by the direction of magnetization of the element and the direction of a sense current flowing through the element. It changes in proportion to the square of the cosine of the angle formed by. Regarding the AMR effect, see D.A. A. Thompson et al., Memory, Stor.
age, and Related Applicati
ons (IEEE Trans. on Mag. MA)
G-11, p. 1039 (1975)).

[0004] Barkhausen noise occurs in a magnetoresistive sensor using the AMR effect, but a longitudinal bias is often applied to suppress this noise. This longitudinal bias is applied using an antiferromagnetic material such as FeMn, NiMn, and nickel oxide. Note that FeMn
And NiMn are chemical symbols. Here, the expressions are simplified using chemical symbols and element symbols as appropriate.

[0005] More recently, a magnetoresistance effect called a giant magnetoresistance effect or a spin valve effect has been reported. This magnetoresistance effect is more pronounced, and the resistance change of the stacked magnetoresistance sensor is caused by spin-dependent transmission of the electron conductor between the magnetic layers through the non-magnetic layer and the accompanying spin-dependent scattering at the layer interface. It has been. In a magnetoresistance sensor exhibiting such a magnetoresistance effect, the in-plane resistance between a pair of ferromagnetic layers separated by a nonmagnetic layer is proportional to the cosine of the angle between the magnetization directions of the two layers. Variable, higher sensitivity than sensors utilizing the AMR effect, and greater resistance change.

[0006] Also, JP-A-2-61572 discloses that
A laminated magnetic structure that produces a high magnetoresistance effect by antiparallel alignment of magnetization in a magnetic layer is disclosed. This laminated structure is made of a ferromagnetic transition metal and an alloy, and has a structure in which a fixed layer is added to one of at least two ferromagnetic layers separated by an intermediate layer. F as the immobilization layer
eMn is said to be suitable.

Further, Japanese Patent Application Laid-Open No. 4-358310 discloses a ferromagnetic two-layered thin film layer separated by a non-magnetic metal thin-film layer. The magnetization directions of the magnetic thin film layers are orthogonal, and the resistance between the two uncoupled ferromagnetic layers changes in proportion to the cosine of the angle between the magnetization directions of the two layers, and is independent of the direction of the current flowing through the sensor. A simple magnetoresistive sensor is disclosed.

Japanese Patent Application Laid-Open No. Hei 6-203340 discloses that an antiferromagnetic material layer includes two ferromagnetic thin film layers separated by a nonmagnetic metal material thin film when an externally applied magnetic field is zero. There is disclosed a magnetoresistive sensor based on the above effect, in which the magnetization is maintained perpendicular to an adjacent ferromagnetic layer.

The structure of a reproducing magnetoresistive sensor using a ferromagnetic tunnel junction is described in JP-A-10-16.
No. 2327 discloses it.

[0010]

FIG. 22 is a sectional side view showing an example of a magnetoresistive element constituting a conventional magnetoresistive sensor. In this magnetoresistive element 102, a lower electrode layer 108 is formed on a lower shield layer 104 formed on a base (not shown) via a lower gap layer 106, and a magnetoresistive film 110 is formed thereon. I have. The upper electrode layer 112 is composed of first and second upper electrode layers 114 and 116, and the first upper electrode layer 114 is formed on the magnetoresistive film 110 directly in contact with the magnetoresistive film 110,
The upper electrode layer 116 is formed thereon. An upper gap layer 113 is formed on the second upper electrode layer 112,
Further, an upper shield layer 115 is formed thereon.

The left end face in FIG.
r Bearing Surface), and when reading information from a magnetic recording medium, the ABS 118
Are formed so as to face each other with a slight gap formed between them and the surface of the magnetic recording medium.

The magnetoresistance effect element 102 having such a structure
Is manufactured, the lower electrode layer 108 is formed by the following process (1) or (2). (1) A lower electrode film to be a lower electrode layer 108 is formed on the entire lower gap layer 106, and then a photoresist layer is formed on the lower electrode film and milled to form a pattern into an original shape. Subsequently, the photoresist layer is removed using a solution of a stripping agent. (2) After forming a lift-off photoresist layer on the lower gap layer 106, a lower electrode film as the lower electrode layer 108 is formed, and then the photoresist is removed using a solution of a release agent (lift-off). ). FIG. 23 is a cross-sectional side view showing the magnetoresistive element 102 in a state immediately after patterning the lower electrode layer 108 by the method (1) as an example. After this patterning step, the photoresist layer 120 on the lower electrode layer 108 is removed by a stripping agent as described above.

However, at this time, the edge 1 of the lower electrode layer 108
22 is exposed to a solution of the stripping agent in which the photoresist is dissolved. As a result, there has been a case where the edge 122 of the lower electrode layer 108 is corroded or peeled off by a stripping solution in which the photoresist is dissolved. Therefore, the roughness at the edge 122 of the lower electrode layer 108 extremely increases, and the degree of the roughness sometimes reaches a maximum of several hundred nm.

In the case where the lower electrode layer 108 is formed by the method (2), the edge 122 of the lower electrode layer 108 is also peeled off when the photoresist for lift-off is removed with a stripper solution. Since the photoresist is exposed to the dissolving agent solution in which the photoresist is dissolved, the same problem as in the case of using the method (1) occurs.

As can be seen from FIG. 22, the second upper electrode layer 116 extends above the edge 122 of the lower electrode layer 108 with the insulating layer 124 interposed therebetween. When the roughness of the portion increases, an electrical short-circuit easily occurs between the peripheral end portion of the lower electrode layer and the second upper electrode layer 116 thereabove, and such a problem has actually occurred in the past. . When such a short circuit occurs, even if current flows between the upper electrode layer 112 and the lower electrode layer 108, the sense current flows not through the magnetoresistive film 110 but through the short-circuit portion between the electrodes. It is difficult to effectively detect a change in the resistance value of the resistor 110. Therefore,
As a result, the manufacturing yield is reduced and the cost is increased, or only a magnetoresistive element having low detection sensitivity and insufficient performance is obtained.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and an object of the present invention is to provide a magnetoresistive element having a structure in which a short circuit between electrodes does not occur during manufacturing and a method of manufacturing the same. It is an object of the present invention to provide a magnetoresistive detection system and a magnetic recording system that achieve low cost and high performance by using a magnetoresistive element that solves the problem of short circuit between them.

[0017]

According to the present invention, in order to achieve the above object, a lower electrode layer formed directly or via another layer on a lower shield layer, or serving as a lower shield layer, comprises: A magnetoresistive film formed in a partial region on the lower electrode layer, and an upper electrode layer formed above the lower electrode layer and extending at least partially on the lower surface in contact with the upper surface of the magnetoresistive film A lower electrode layer formed around the lower electrode layer and in contact with an edge of the lower electrode layer on the upper surface of the lower shield layer or the upper surface of the lower gap layer. Characterized by including a layer for preventing corrosion or peeling.

Further, the present invention provides a method of manufacturing a semiconductor device, comprising: forming a lower electrode layer directly or via another layer on a lower shield layer or serving also as a lower shield layer; A method for manufacturing a magnetoresistive element having a formed magnetoresistive film and an upper electrode layer formed above the lower electrode layer and extending at least partially on the upper surface of the magnetoresistive film in contact with the lower electrode layer When forming the lower electrode layer, first form a lower electrode film as the lower electrode layer on the upper surface of the lower shield layer, or on the upper surface of the lower gap layer,
A photoresist layer is formed on the lower electrode film and patterned to form the lower electrode layer. Thereafter, the lower electrode layer is corroded or peeled around the lower electrode layer in contact with the edge of the lower electrode layer. The method is characterized in that the photoresist layer is removed after forming a layer for preventing the above.

Further, the magnetoresistive detection system of the present invention comprises:
A lower electrode layer formed directly or via a lower gap layer on the lower shield layer; a magnetoresistive film formed in a partial region on the lower electrode layer; An upper electrode layer that is formed and at least a part of the lower surface extends in contact with the upper surface of the magnetoresistive effect film, and the upper surface of the lower shield layer, or the upper surface of the lower gap layer around the lower electrode layer. A magnetoresistance effect element including a layer for preventing corrosion or peeling of the lower electrode layer formed in contact with an edge of the lower electrode layer; and further, a current is supplied between the lower electrode layer and the upper electrode layer. Current supply means; and a resistivity detection means for detecting a change in resistivity of the magnetoresistive element based on a current flowing between the lower electrode layer and the upper electrode layer by the current supply means. I do.

Further, in the magnetic recording system of the present invention, the lower electrode layer is formed on the lower shield layer directly or via the lower gap layer, and is formed in a part of the lower electrode layer. A magnetoresistive film, an upper electrode layer formed above the lower electrode layer and extending at least part of the lower surface in contact with the upper surface of the magnetoresistive film, and the upper surface of the lower shield layer, or A magnetoresistive element including a layer for preventing corrosion or peeling of the lower electrode layer formed on the upper surface of the lower gap layer and in contact with an edge of the lower electrode layer around the lower electrode layer; Detecting a change in resistivity of the magnetoresistive element based on a current flowing between the electrode layer and the upper electrode layer and a current flowing between the lower electrode layer and the upper electrode layer by the current flowing means; Resistance detecting means The magnetoresistive element is arranged in close proximity to an information recording surface of a magnetic recording medium on which a plurality of tracks for recording information are formed, and a driving unit detects the magnetoresistive effect element. It is moved to a position.

In the method of manufacturing a magnetoresistive effect element according to the present invention, as described above, the photoresist layer formed on the lower electrode film for patterning the lower electrode film to form the lower electrode layer includes the above-mentioned lower electrode film. After formation of the layer that prevents corrosion or delamination of the layer, it is removed, for example, with a stripper solution. Therefore, since the edge of the lower electrode layer is covered with a layer that prevents corrosion or peeling of the lower electrode layer, the lower electrode layer is not exposed to the stripper solution in which the photoresist is dissolved, and the lower electrode layer is not exposed as in the related art. There is no problem that the layer edge is corroded or peeled and the roughness is increased. As a result, an electrical short circuit between the lower electrode layer and the upper electrode layer does not occur, and a high-performance magnetoresistive element with improved production yield and high detection sensitivity can be obtained.

The magnetoresistive element of the present invention can be manufactured based on such a method for manufacturing a magnetoresistive element of the present invention, and an electrical short circuit between the lower electrode layer and the upper electrode layer can be prevented. Since such a phenomenon does not occur, it is possible to realize a high-performance magnetoresistive element having improved manufacturing yield and high detection sensitivity.

Further, in the magnetoresistive detection system of the present invention, the resistivity of the magnetoresistive film changes due to the change in the strength and direction of the magnetic field, and as a result, a current is applied between the lower electrode layer and the upper electrode layer. The magnitude of the flowing current changes. The resistivity detection means detects a change in resistivity based on the change in current. Since the magnetoresistive detection system of the present invention is constituted by a magnetoresistive effect element having the same structure as the magnetoresistive effect element of the present invention, the manufacturing yield of the magnetoresistive effect element is high, so that the cost can be reduced. Yes,
Further, since there is no short circuit between the electrodes of the magnetoresistive effect element, high performance can be realized.

Further, in the magnetic recording system of the present invention, the magnetoresistive element arranged close to the information recording surface of the magnetic recording medium is moved to the position of the selected track by the driving means, and the necessary information is read. Is read. Since the magnetic resistance detection system constituting the magnetic recording system of the present invention has the same configuration as the magnetic resistance detection system of the present invention, the magnetic recording system of the present invention can provide the same effects as those of the magnetic resistance detection system of the present invention. Thus, high performance can be realized in terms of cost, cost, and sensitivity for reading information from a magnetic recording medium.

[0025]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional side view showing an example of a magnetoresistive element according to the present invention, and FIG. 2 is a sectional side view taken along line AA ′ of FIG. As shown in FIGS. 1 and 2, the magnetoresistive element 2 according to the present embodiment has a lower shield layer 4 formed on a lower shield layer 4 extending over a base (not shown) via a lower gap layer 6. The electrode layer 8, a magnetoresistive film 10 formed in a partial region on the lower electrode layer 8, and at least a part of the lower surface formed above the lower electrode layer 8 is in contact with the upper surface of the magnetoresistive film 10. And an upper electrode layer 12 that extends.

The left end face in FIG. 1 is the ABS face 14, and the ABS face 14 is formed by the left end face of each of the above layers. As shown in FIG. 1, the lower electrode layer 8 is formed in a partial region on the ABS surface 14 side on the lower gap layer 6. On the upper surface of the lower gap layer 6, a corrosion prevention layer 16 is formed around the lower electrode layer 8 and in contact with the edge of the lower electrode layer 8. This corrosion prevention layer 16
In the present embodiment, the edge 18 on the lower electrode layer 8 side is formed on the edge 20 of the lower electrode layer 8. In the following description, “the layer that prevents corrosion or peeling of the lower electrode layer” is simply referred to as “corrosion prevention layer”. This corrosion prevention layer is referred to as “corrosion prevention of the lower electrode layer” in the claims. Or a layer for preventing peeling. " The corrosion prevention layer 16 may be a single-layer film made of a metal, an oxide, and a nitride, or a mixed film made of a mixture of an oxide and a nitride, or a metal, an oxide, a nitride, and an oxide and a nitride. And a multilayer film composed of a plurality of the above mixtures.

The upper electrode layer 12 includes first and second upper electrode layers 22 and 24. The first upper electrode layer 22 is located on the magnetoresistive film 10 in a region substantially the same as the magnetoresistive film 10. The second upper electrode layer 24 is formed above the lower electrode layer 8 via the insulating layer 35, and a part of the lower surface 26 is in contact with the upper surface 28 of the first upper electrode layer 22. The upper electrode layer 12
On the upper shield layer 31 via the upper gap layer 30.
Are formed. The magnetoresistive film 10 is composed of a ferromagnetic tunnel junction film. More specifically, as shown in FIG. 2, a free layer 32 formed on the lower electrode layer 8 and a non-magnetic layer formed on the free layer 32 34, a fixed layer 36 formed on the nonmagnetic layer 34, and a fixed layer 38 formed on the fixed layer 36 and fixing the direction of magnetization in the fixed layer 36. Also, the magnetoresistive film 1
0, on the lower electrode layer 8 on both sides, as shown in FIG.
A vertical bias layer 40 is formed at least partially in contact with the magnetoresistive film 10.

Next, an embodiment of a method for manufacturing a magnetoresistive element according to the present invention will be described. The magnetoresistance effect element 2 can be manufactured by the following procedure.
3 to 8 are plan views showing steps in a method for manufacturing a magnetoresistive element according to the embodiment. In the drawings, the same elements as those in FIGS. 1 and 2 are denoted by the same reference numerals. (Step 1) The lower shield layer 4 is formed, a photoresist is formed thereon, and the lower shield layer 4 is patterned into the shape shown in FIG. 3A by milling or lift-off. In FIG. 3A, a range surrounded by a thick line is a range patterned in this step. In each of FIGS. 3 to 8, a thick line indicates a film or the like formed in a process described with reference to each drawing.

(Step 2) Subsequently, the photoresist layer 7
Is formed and milling is performed, thereby patterning the lower electrode layer 8 as shown in FIG. After that, before removing the photoresist layer 7, a corrosion prevention layer 16 is formed around the lower electrode layer 8 in contact with the edge 20 of the lower electrode layer 8,
Then, the photoresist layer 7 formed on the lower electrode layer 8 for patterning the lower electrode layer 8 is removed using a stripper solution. In this embodiment, the corrosion prevention layer 1 is used.
6 indicates that the edge 18 on the lower electrode layer 8 side is the edge 20 of the lower electrode layer 8.
It is formed in a state of slightly riding on the top.

(Step 3) Thereafter, as shown in FIG. 4A, a lift-off photoresist is formed on the lower electrode layer 8, a lower electrode thickening layer 9 is formed, and then lift-off is performed. The lower electrode layer 8 is completed. (Step 4) After forming a vertical bias film, a photoresist layer for patterning is formed, and milling is performed in a shape shown in FIG. 4B. The photoresist is removed to obtain a patterned vertical bias layer 40. (Step 5) Subsequently, the magnetoresistive film 10 and the first
The upper electrode layer 22 is formed. A photoresist for patterning the magnetoresistive film is first formed, and after the magnetoresistive film 10 is milled to the nonmagnetic layer, the photoresist is removed (FIG. 5A).

(Step 6) A photoresist is formed, the nonmagnetic layer 34, the free layer 32, and the insulating layer 35 (FIG. 2) are milled, and the photoresist is removed (FIG. 5B). (Step 7) A second upper electrode layer lift-off photoresist is formed, and after the second upper electrode layer 24 is formed, lift-off is performed (FIG. 6A). (Step 8) A photoresist for lift-off of the upper electrode thickening layer is formed, and after forming the thickening layer 25, lift-off is performed (FIG. 6B). (Step 9) After forming a photoresist for lift-off of the insulating thickening layer and forming the thickening layer 27, lift-off is performed (FIG. 7A). (Step 10) The upper gap layer 30 is formed, a photoresist for forming an electrode hole is formed, and after milling until the electrode is exposed, the photoresist is removed to form an electrode exposed portion 29 ((FIG. B)). (Step 11) Next, after the base is cut into an appropriate size, the base is polished until the ABS surface 14 is exposed as shown in FIG. When the magnetoresistive effect element 2 is used for a magnetic recording / reproducing head, an appropriate form of a recording head section is formed in the above step 11. Further, the ABS surface 14 is processed into an appropriate shape so as to take an optimal flight attitude when operating as a magnetic recording / reproducing head in a state assembled as a device, and is assembled into a suspension. 12 and the like.

As described above, in the method of manufacturing a magnetoresistive element according to the present embodiment, the photoresist layer 7 (formed on the lower electrode film for patterning the lower electrode film to form the lower electrode layer 8). FIG. 3B) is removed after the corrosion prevention layer 16 is formed. Therefore, the edge 20 of the lower electrode layer 8
Is covered with the anticorrosion layer 16 so that the edge 20 of the lower electrode layer 8 is not corroded or peeled off as in the prior art, so that roughness is increased. The problem of doing so does not occur. As a result, an electrical short circuit does not occur between the lower electrode layer 8 and the second upper electrode layer 24, and a high-performance magnetoresistive element with improved manufacturing yield and high detection sensitivity can be obtained. .

The magnetoresistive element 2 of the above embodiment can be manufactured based on such a method of manufacturing the magnetoresistive element 2, and the lower electrode layer 8 and the second upper electrode layer 24 Because there is no electrical short circuit between
It is possible to realize a high-performance magnetoresistive element 2 with improved manufacturing yield and high detection sensitivity.

In the structure of the magnetoresistive element 2 described above, if a current flows from the upper electrode to the lower electrode in FIGS. 1 and 2, the current flows from the second upper electrode layer 24 to the first electrode. It passes through the upper electrode layer 22, the fixed layer 38, the fixed layer 36, the nonmagnetic layer 34, and the free layer 32 sequentially, and flows to the lower electrode layer 8. At this time, the vertical bias layer 40 is
2, fixed layer 3 by insulating layer 35 and nonmagnetic layer 34
Since it is electrically insulated from the layers above 6, it does not affect the flow of current.

In this structure, since the vertical bias layer 40 is in contact with the free layer 32, the vertical bias from the vertical bias layer 40 is sufficiently applied to the free layer 32. Therefore, it is possible to ensure that a sense current flows through the magnetoresistive film 10 and that a vertical bias is correctly applied to the free layer 32.

The magnetoresistive element of the present invention is not limited to the magnetoresistive element 2 having the above-described structure, and exerts its effect when applied to magnetoresistive elements having various structures. For example, the edge on the lower electrode layer 8 side of the corrosion prevention layer 16 is not limited to a shape riding on the edge of the lower electrode layer 8 as shown in FIG. A structure in which the end face on the electrode layer 8 side is in contact with the end face of the lower electrode layer 8 is also possible. Even in the case of such a structure, the end face of the lower electrode layer 8 is covered with the corrosion prevention layer 16, so that when removing the photoresist on the lower electrode layer 8, the end face of the lower electrode layer 8 is exposed to a release agent solution in which the photoresist is dissolved. And increase in roughness can be prevented.

In the above embodiment, the lower electrode layer 8 is formed on the lower shield layer 4 via the lower gap layer 6, but the lower gap layer 6 is eliminated and the lower shield layer 4 is formed. The lower electrode layer may be formed directly on the substrate.
Similarly, the upper gap layer 30 can be omitted.

An underlayer is provided between the free layer 32 and the lower electrode layer 8 or the vertical bias layer 40 in contact with the free layer 32, or an upper layer is provided between the fixing layer 38 and the upper electrode layer 12. It can also be structured. In the above embodiment, the upper electrode layer 12 includes the first and second upper electrode layers 22,
Although the first upper electrode layer 22 is used, the first upper electrode layer 22 may be omitted and a structure including only the second upper electrode layer 24 may be used. Further, regarding the magnetoresistive effect film 10 itself,
Not limited to the above-described magnetoresistive effect film 10, various structures can be used. FIG. 9 is a cross-sectional side view showing a magnetoresistive element of another embodiment in which the structure of the magnetoresistive film 10 is different. FIG. 9 corresponds to FIG.
The same elements as those described above are denoted by the same reference numerals. FIG.
In the magnetoresistive effect element 42 shown in (1), the free layer 32 and the nonmagnetic layer 34 are formed only in regions relatively close to the fixed layer 36 and the like on both sides of the fixed layer 36 and the like.

FIG. 10 is a cross-sectional side view showing a magnetoresistive element of still another embodiment in which the structure of the magnetoresistive film 10 is different. FIG. 10 corresponds to FIG.
The same elements as those in FIG. 2 and the like are denoted by the same reference numerals.
In the magnetoresistive element 44 shown in FIG.
The free layer 32 and the non-magnetic layer 34 are formed only up to the end of the vertical bias layer 40 on the fixed layer side. In addition,
These magnetoresistive elements 42 and 44
Means that the structure in the same cross section as FIG.
Is the same as

The present invention can be applied to the magnetoresistive elements 42 and 44 having such a structure.
As in the case of the above, according to the present invention, on the upper surface of the lower gap layer 6, around the lower electrode layer 8, in contact with the edge of the lower electrode layer 8, a corrosion preventing layer (a layer for preventing corrosion or peeling of the lower electrode layer) is formed. ) Can prevent corrosion or peeling of the edge of the lower electrode layer 8 during patterning of the lower electrode layer.

FIG. 11 is a sectional side view showing a magnetoresistive element of another embodiment in which the structure of the magnetoresistive film 10 is different, and shows a conceptual sectional view when cut in parallel to the ABS. . FIG. 11 corresponds to FIG. 2, in which the same elements as those in FIG. 2 and the like are denoted by the same reference numerals. In this configuration, a lower shield layer 4, a lower gap layer 6, and a lower electrode layer 8 as a lower conductive layer are sequentially stacked on the base in this order. An underlayer (symbol is omitted) is stacked thereon, and a free layer 291 and a nonmagnetic layer 34 (also referred to as a barrier layer) are sequentially stacked in this order. A pinned layer 36, a pinned layer (also referred to as a pinned layer) 38, and an upper layer 39 are sequentially laminated in this order on a portion between the left and right vertical bias layers 40 on the nonmagnetic layer (barrier layer) 34. And these are patterned as shown. An insulating layer 35 is disposed around the patterned “nonmagnetic layer 34 / fixed layer 36 / fixed layer 38 / upper layer 39”. Further, an upper electrode layer 12, an upper gap layer 30, and an upper shield layer 31 are stacked thereon.

The portion of “underlayer / free layer 291 / nonmagnetic layer 34 (barrier layer) 34 / fixed layer 36 / fixed layer (fixed layer) 38 / upper layer 39” is a magnetoresistive film. In this structure, if a current flows from the upper electrode layer 12 to the lower electrode layer 8 as the lower conductive layer in the drawing, the current flows from the upper electrode layer 12 to the upper layer 39, the fixing layer 38, the fixing layer 36, It passes through the nonmagnetic layer 34, the free layer 291, and the underlayer in this order, and flows to the lower electrode layer 8 as a lower conductive layer. At this time, the vertical bias layer 40 does not affect the flow of the current. Further, since the vertical bias pattern of the vertical bias layer 40 is provided in contact with the free layer pattern of the free layer 291, the vertical bias is sufficiently applied to the free layer 291. Therefore, by using this structure, it is possible to achieve both the proper flow of the sense current through the magnetoresistive film portion and the proper application of the vertical bias to the free layer 291. Here, a structure in which both the upper gap layer 30 and the lower gap layer 6 are provided is shown, but one gap layer may be omitted.
Further, although the structure in which the base layer is provided between the lower electrode layer 8 as the lower conductive layer and the free layer 291 has been described, the base layer may be omitted in some cases. Also, here, an example was shown in which the patterning was performed from the upper end of the nonmagnetic layer (barrier layer) 34 to the lower end of the free layer 291 during patterning of the magnetoresistive film. Can be appropriately selected. Further, the “underlayer / free layer” on the vertical bias film may be omitted.

FIG. 12 is a sectional side view showing a modification of the magnetoresistive element shown in FIG. In this variation,
As shown in FIG. 12, the upper gap layer 30 and the lower gap layer 6 are both omitted from the structure of FIG. FIG. 13 is a sectional side view showing a modification of the magnetoresistive element shown in FIG. In this modification, FIG.
As shown in FIG. 3, the upper electrode layer 12 is further omitted from the structure of FIG. 12, and the upper electrode also serves as the upper shield layer 31. FIG. 14 is a sectional side view showing a modification of the magnetoresistance effect element shown in FIG. This modification is different from the first embodiment in that an underlayer (not shown) and a free layer 291 are also formed on the slope of the end of the vertical bias pattern of the vertical bias layer 40. FIG. 15 is a cross-sectional side view showing a modification of the magnetoresistive element shown in FIG. In this modification, the underlayer and the free layer 291 are patterned on the vertical bias pattern. FIG. 16 is a cross-sectional side view showing a modification of the magnetoresistive element shown in FIG. This modification is different from the TMR film pattern in that the free layer 291 and the vertical bias layer 40 are not in contact with each other because the pattern is completely patterned to the lowermost end of the free layer 291. The underlayer among the underlayer and the free layer 291 may be left unpatterned.
In this structure, the free layer pattern of the free layer 291 is not in contact with the vertical bias pattern of the vertical bias layer 40. However, if the free layer pattern edge and the vertical bias pattern edge are sufficiently close to each other, , A sufficient vertical bias can be applied.

FIG. 17 is a sectional side view showing another embodiment of the magnetoresistive element of the present invention. FIG. 17 corresponds to FIG. 2, in which the same elements as those in FIG. 2 and the like are denoted by the same reference numerals. In the magnetoresistive element 46 shown in FIG. 17, the fixed layer 38 is formed on the lower electrode layer 8,
The fixed layer 36, the nonmagnetic layer 34, and the free layer 32 are formed thereon in this order.

The nonmagnetic layers 3 on both sides of the free layer 32
4, an insulating layer 35 is formed, and a vertical bias layer 40 is formed thereon. On the free layer 32 and the vertical bias layer 40, an upper electrode layer 12, an upper gap layer 30, and an upper shield layer 31 are sequentially stacked. The structure of such a magnetoresistive element 46 is also typical as the structure of the magnetoresistive element, similar to the structure of the magnetoresistive element 2 described above, and the magnetoresistive element is formed on the lower electrode layer 8 as described above. In the case where the effect film 10 is formed, the corrosion prevention layer (corrosion or peeling of the lower electrode layer 8) is formed on the upper surface of the lower gap layer 6 around the lower electrode layer 8 in contact with the edge of the lower electrode layer 8 according to the present invention. (Corrosion preventing or peeling) at the edge of the lower electrode layer 8 during patterning of the lower electrode layer can be prevented.

In this structure, if a current flows from the upper electrode to the lower electrode in FIG. 17, the current flows from the upper electrode layer 12 to the free layer 32, the non-magnetic layer 34, and the fixed layer 3.
6. It sequentially passes through the immobilization layer 38 and flows to the lower electrode layer 8. At this time, since the vertical bias layer 40 is electrically insulated from the layers below the fixed layer 36 by the insulating layer 35 and the nonmagnetic layer 34, the vertical bias layer 40 does not affect the flow of current. In this structure, since the vertical bias layer 40 is in contact with the free layer 32, the vertical bias from the vertical bias layer 40 is sufficiently applied to the free layer 32. Therefore, it is possible to ensure that a sense current flows through the magnetoresistive film 10 and that a vertical bias is correctly applied to the free layer 32.

Although the magnetoresistive element 46 has a structure including a gap layer, a lower portion between the lower shield layer 4 and the lower electrode layer 8 and a lower portion between the upper shield layer and the upper electrode layer 12 are formed. It is also possible to adopt a structure in which the gap layer 6 and the upper gap layer 30 are omitted, and in this case, the present invention exerts its effect.

The upper electrode layer 12 in contact with the free layer 32
An upper layer may be provided between the lower electrode layer 8 and the vertical bias layer 40, or an underlayer may be provided between the fixing layer 38 and the lower electrode layer 8. Further, in the magnetoresistive effect element 46, of the four layers constituting the magnetoresistive effect film 10, the free layer 3
Although only 2 is patterned, it is sufficient that at least the free layer 32 is patterned, and to what extent the other layers are patterned can be appropriately selected. When the vertical bias layer 40 is formed of an oxide material, the vertical bias layer 40 itself becomes an insulator, so that the insulating layer 35 located below the vertical bias layer 40 can be omitted. These magnetoresistive elements 42, 44, 46 also
It can be manufactured by basically the same steps as the manufacturing method described with reference to FIGS.

Each layer constituting the magnetoresistive element 2 and the like can be specifically formed of the following materials. (1) Substrate: Altic, SiC, alumina, Altic / alumina two layers, SiC / alumina two layers. (2) Lower shield layer 4: NiFe, CoZr, or C
oFeB, CoZrMo, CoZrNb, CoZr, C
oZrTa, CoHf, CoTa, CoTaHf, Co
NbHf, CoZrNb, CoHfPd, CoTaZr
Nb, CoZrMoNi alloy, FeAlSi, iron nitride-based material, MnZn ferrite, NiZn ferrite, Mg
A single-layer film or a multilayer film composed of Zn ferrite, or a single-layer film or a multilayer film composed of a mixture thereof.

(3) Lower electrode layer 8: Au, Ag, Cu, M
o, W, Y, Ti, Zr, Hf, V, Nb, Pt, Ta
Or a multi-layer film comprising a mixture thereof, and a single-layer film or a multi-layer film comprising a mixture thereof. (4) Corrosion prevention layer 16: Ti, Cr, Co, Y, Zr,
Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta,
W, Ir, Pt, Au, Si, Ti, Ni single-layer film or multilayer film, or a single-layer film or multilayer film made of a mixture thereof, or Ti, V, Cr, Co, Cu, Z
n, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd,
Ag, Hf, Ta, W, Re, Os, Ir, Pt, A
A single-layer film or a multi-layer film composed of oxides and nitrides of u, Si, Al, Ti, Ta, Ni, Co, and Re, or a single-layer film or a multi-layer film composed of a mixture thereof. Alternatively, Ti, Cr, Co, Y, Zr, Nb, Mo, Ru,
Rh, Pd, Ag, Hf, Ta, W, Ir, Pt, A
a single-layer film or a multi-layer film composed of u, Si, Ti, Ni, or a single-layer film or a multi-layer film composed of a mixture thereof, and Ti, V, Cr, Co, Cu, Zn, Y, Zr, Nb,
Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta,
W, Re, Os, Ir, Pt, Au, Si, Al, T
A single-layer film or a multilayer film composed of oxides and nitrides of i, Ta, Ni, Co, and Re, or a laminated film with a single-layer film or a multilayer film composed of a mixture thereof.

(5) Upper electrode layer 12: Au, Ag, Cu,
Mo, W, Y, Pt, Ti, Zr, Hf, V, Nb, T
a single-layer film or multilayer film consisting of a, or a single-layer film or multilayer film consisting of a mixture thereof. (6) Upper shield layer: NiFe, CoZr, or Co
FeB, CoZrMo, CoZrNb, CoZr, Co
ZrTa, CoHf, CoTa, CoTaHf, CoN
bHf, CoZrNb, CoHfPd, CoTaZrN
b, CoZrMoNi alloy, FeAlSi, iron nitride-based material, MnZn ferrite, NiZn ferrite, MgZ
a single-layer film or a multilayer film made of n-ferrite, or
A single-layer film or a multi-layer film comprising these mixtures.

(7) Insulating layer 35: Single-layer film or multilayer film made of Al oxide, Si oxide, aluminum nitride, silicon nitride, diamond-like carbon, or
A single-layer film or a multi-layer film comprising these mixtures. (8) Lower gap layer 6: a single layer film or a multilayer film made of Al oxide, Si oxide, aluminum nitride, silicon nitride, diamond-like carbon, or a single layer film or a multilayer film made of a mixture thereof. (9) Upper gap layer 30: a single layer film or a multilayer film made of Al oxide, Si oxide, aluminum nitride, silicon nitride, diamond-like carbon, or a single layer film or a multilayer film made of a mixture thereof. (10) Upper layer: Au, Ag, Cu, Mo, W, Y, T
A single-layer film or a multilayer film composed of i, Pt, Zr, Hf, V, Nb, Ta, or a single-layer film or a multilayer film composed of a mixture thereof. (11) Vertical bias layer 40: CoCrPt, CoCr,
CoPt, CoCrTa, FeMn, NiMn, Ni oxide, NiCo oxide, Fe oxide, NiFe oxide,
A single-layer film or a multilayer film composed of IrMn, PtMn, PtPdMn, ReMn, Co ferrite, and Ba ferrite, or a single-layer film or a multilayer film composed of a mixture thereof.

More specifically, the following structure can be used as the magnetoresistance effect film. (A) Base / underlayer / free layer / first MR enhanced layer / nonmagnetic layer / second MR enhanced layer / fixed layer / fixed layer / protective layer. (B) Base / underlayer / fixed layer / fixed layer / first MR enhanced layer / nonmagnetic layer / second MR enhanced layer / free layer / protective layer. (C) Base / underlayer / first fixed layer / first fixed layer / first
MR enhanced layer / non-magnetic layer / second MR enhanced layer /
Free layer / third MR enhanced layer / nonmagnetic layer / fourth MR
Enhance layer / second fixed layer / second fixed layer / protective layer. (D) base / underlayer / fixed layer / first MR enhanced layer /
Nonmagnetic layer / second MR enhancement layer / free layer / protective layer. (E) Base / underlayer / free layer / first MR enhanced layer / nonmagnetic layer / second MR enhanced layer / fixed layer / protective layer.

The material of the underlayer of the magnetoresistive film may be a single-layer film of a metal, an oxide or a nitride, a mixture film,
Alternatively, a multilayer film can be used. Specifically, T
a, Hf, Zr, W, Cr, Ti, Mo, Pt, Ni,
Ir, Cu, Ag, Co, Zn, Ru, Rh, Re, A
A single-layer film, a mixture film, or a multilayer film including u, Os, Pd, Nb, V, and oxides or nitrides of these materials is used. As additional elements, Ta, Hf, Zr, W,
Cr, Ti, Mo, Pt, Ni, Ir, Cu, Ag, C
o, Zn, Ru, Rh, Re, Au, Os, Pd, N
b and V can also be used. Note that a structure that does not include a base layer may be employed.

The material of the free layer 32 is Ni
Fe, CoFe, NiFeCo, FeCo, CoFe
B, CoZrMo, CoZrNb, CoZr, CoZr
Ta, CoHf, CoTa, CoTaHf, CoNbH
f, CoZrNb, CoHfPd, CoTaZrNb,
A CoZrMoNi alloy or an amorphous magnetic material can be used.

The non-magnetic layer 34 is a single layer film of an oxide, a nitride, a mixture of an oxide and a nitride, a metal / oxide two-layer film, a metal / nitride two-layer film, a metal / (oxide and Mixture with nitride) It can be a two-layer film. In particular,
Ti, V, Cr, Co, Cu, Zn, Y, Zr, Nb,
Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta,
W, Re, Os, Ir, Pt, Au, Si, Al, T
i, Ta, Pt, Ni, Co, Re, V oxide and nitride single-layer or multilayer, or a mixture thereof, a single-layer or multilayer;
V, Cr, Co, Cu, Zn, Y, Zr, Nb, Mo,
Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, R
e, Os, Ir, Pt, Au, Si, Al, Ti, T
A possible candidate is a single-layer film or a multilayer film of oxides and nitrides of a, Pt, Ni, Co, Re, and V, or a laminated film of a single-layer film or a multilayer film of a mixture thereof.

The first and second MR enhancement layers are made of Co, NiFeCo, FeCo or the like, or CoFeB,
CoZrMo, CoZrNb, CoZr, CoZrT
a, CoHf, CoTa, CoTaHf, CoNbH
f, CoZrNb, CoHfPd, CoTaZrNb,
A CoZrMoNi alloy or an amorphous magnetic material can be used. When the MR enhance layer is not used, the MR ratio is slightly reduced as compared with the case where the MR enhance layer is used, but the number of steps required for fabrication is reduced by not using the MR enhance layer.

As the fixed layer 36, NiFe, CoF
e, NiFeCo, FeCo, CoFeB, CoZrM
o, CoZrNb, CoZr, CoZrTa, CoH
f, CoTa, CoTaHf, CoNbHf, CoZr
Nb, CoHfPd, CoTaZrNb, CoZrMo
Ni alloy or amorphous magnetic material can be used. Alternatively, Ti, V, Cr, C
o, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru,
Rh, Pd, Ag, Hf, Ta, W, Re, Os, I
r, Pt, Au, Si, Al, Ti, Ta, Pt, N
It is also possible to use a simple substance composed of a group based on i, Co, Re, and V, an alloy, or a laminated film in combination with a laminated film. Specific configurations of the fixed layer 36 include Co / Ru / Co, CoFe / Ru / CoFe, C
oFeNi / Ru / CoFeNi, Co / Cr / Co,
CoFe / Cr / CoFe, CoFeNi / Cr / Co
FeNi is a strong candidate.

The material of the fixing layer 38 is FeMn,
NiMn, IrMn, RhMn, PtPdMn, ReM
n, PtMn, PtCrMn, CrMn, CrAl, T
bCo, Ni oxide, Fe oxide, mixture of Ni oxide and Co oxide, mixture of Ni oxide and Fe oxide, Ni
Oxide / Co oxide two-layer film, Ni oxide / Fe oxide 2
Layer film, CoCr, CoCrPt, CoCrTa, PtC
o or the like can be used. PtMn or PtM
n is Ti, V, Cr, Co, Cu, Zn, Y, Zr, N
b, Mo, Tc, Ru, Rh, Pd, Ag, Hf, T
a, W, Re, Os, Ir, Pt, Au, Si, Al,
Materials to which Ti and Ta are added are promising candidates.

Examples of the protective layer include oxide, nitride, a mixture of oxide and nitride, a metal / oxide two-layer film, a metal / nitride two-layer film, and a metal / (oxide and nitride mixture). 2) a two-layer film is used. Ti, V, Cr, Co, Cu,
Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, P
d, Ag, Hf, Ta, W, Re, Os, Ir, Pt,
Au, Si, Al, Ti, Ta, Pt, Ni, Co, R
e, V oxide and nitride single-layer film or multilayer film, or a single-layer film or multilayer film of a mixture of these materials, or Ti, V, Cr, Co, Cu, Z
n, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd,
Ag, Hf, Ta, W, Re, Os, Ir, Pt, A
u, Si, Al, Ti, Ta, Pt, Ni, Co, R
A promising candidate is a single-layer film or a multilayer film of oxides and nitrides of e and V, or a laminated film of a single-layer film or a multilayer film of a mixture of these materials. In some cases, the protective layer is not used.

FIG. 18 is a cross-sectional side view showing still another embodiment of the magnetoresistive element of the present invention. FIG. 18 corresponds to FIG. 2, in which the same elements as those in FIG. 2 and the like are denoted by the same reference numerals. In the magnetoresistive element shown in FIG. 18, the lower conductive layer 7 is provided on the lower shield 5,
A pattern of a magnetoresistive film is formed thereon. The magnetoresistive film is an underlayer / free layer / nonmagnetic layer (barrier layer)
/ Fixed layer / fixed layer / upper layer is laminated in this order or formed as shown in FIG. 18, or as shown in FIG. The magnetic layer (barrier layer) 34 / free layer 32 / upper layer 39 are laminated and formed in this order. Here, an example in which the magnetoresistive effect film is patterned to the lowermost layer has been described, but the extent to which the patterning is performed can be appropriately selected. An insulating layer 35 as an insulator is provided around the magnetoresistive film pattern.
Is formed, and a vertical bias pattern is formed thereon by the vertical bias layer 40. Further, an upper shield layer 11 also serving as an upper electrode is formed thereon. Although the structure in which the end of the vertical bias pattern is in contact with the end of the magnetoresistive film pattern is shown here, they may be separated as long as they are located close to each other.

In this structure, the vertical bias layer 40 does not affect the current flow. Further, since the vertical bias pattern is provided near the pattern of the free layer 32, the vertical bias is sufficiently applied to the free layer 32. Therefore, by using this structure,
It is possible to achieve both the proper flow of the sense current through the magnetoresistive film and the proper application of the vertical bias to the free layer 32. Although the structure in which the lower shield layer 5 and the lower conductive layer 7 are in contact with each other is shown here, a lower gap layer may be provided between the two. It is also possible to provide an upper electrode layer between the upper layer 39 of the magnetoresistive film and the upper shield layer 11, and to provide an upper gap layer between the upper electrode layer and the upper shield layer. Is also possible. The underlayer of the magnetoresistive film can be omitted.

FIG. 19 is a cross-sectional side view showing still another embodiment of the magnetoresistive element of the present invention. FIG. 19 corresponds to FIG. 2, in which the same elements as those in FIG. 2 and the like are denoted by the same reference numerals. In the magnetoresistive element shown in FIG. 19, the lower conductive layer 7 is provided on the lower shield layer 5, and a pattern of the magnetoresistive film is formed thereon. The magnetoresistive film is formed by sequentially laminating “underlayer / free layer / nonmagnetic layer (barrier layer) / fixed layer / fixed layer / upper layer” in this order, or as shown in FIG. As shown in the figure, “underlayer (symbol omitted) / fixed layer 13 / fixed layer 3
6 / nonmagnetic layer (barrier layer) 34 / free layer 32 / upper layer 39 "are sequentially laminated in this order. Here, an example in which the magnetoresistive effect film is patterned to the lowermost layer has been described, but the extent to which the patterning is performed can be appropriately selected. An insulating layer 35 as an insulator is formed around the magnetoresistive film pattern, and a vertical bias layer 4 is formed therein.
0 pattern is formed. Further, an upper shield layer 11 also serving as an upper electrode layer is formed thereon. Here, the end of the vertical bias pattern does not contact the end of the magnetoresistive film pattern.

In this structure, the vertical bias layer 40 does not affect the current flow. Further, since the vertical bias pattern is provided near the pattern of the free layer 32, the vertical bias is sufficiently applied to the free layer 32. Therefore, by using this structure,
It is possible to achieve both the proper flow of the sense current through the magnetoresistive film and the proper application of the vertical bias to the free layer 32. Although the structure in which the lower shield layer 5 and the lower conductive layer 7 are in contact with each other is shown here, the lower conductive layer 7
Can be omitted, and a lower gap layer can be provided between them. Further, an upper electrode layer can be provided between the upper layer 39 of the magnetoresistive film and the upper shield layer 11, and an upper gap layer is provided between the upper electrode layer and the upper shield layer 11. It is also possible. The underlayer of the magnetoresistive film can be omitted.

Next, an embodiment of the magnetoresistance detecting system according to the present invention will be described. FIG. 20 is a perspective view showing a magnetic resistance detection system according to the embodiment. The magnetic resistance detection system of the present embodiment shown in FIG. 20 is specifically a magnetic recording / reproducing head 48, and a reproducing head 52, a magnetic pole 54, a coil 56, and an upper magnetic pole 5
And a recording head 60 made up of eight recording heads. The reproducing head 52 is specifically composed of the magnetoresistive element 2 described above.

An information recording / reproducing surface of a magnetic recording medium (not shown) is disposed in close proximity to the ABS 62 of the reproducing head 52, and information is magnetically recorded by the recording head 60. The information recorded on the recording medium is read, and the electric signal thereof is transmitted to the reproducing head 5.
2 is output. As shown in FIG. 20, since the ABS 62 of the reproducing head 52 and the magnetic gap 64 of the recording head 60 are arranged close to each other on the same base 50 (slider), they are formed on the magnetic recording medium. The recording head 60 and the reproducing head 52 can be simultaneously positioned on the same track.

An electric current flows between the lower electrode layer and the upper electrode layer of the magnetoresistive element constituting the reproducing head 52 through the wiring (not shown) by the conducting means 61, and leakage occurs in the information recording unit of the magnetic recording medium. Since the resistance value of the magnetoresistive element 2 changes due to the change in the magnetic field, the current changes. The resistivity detecting means 63 detects a change in the resistivity of the magnetoresistive element based on the change in the current, and the result of the detection becomes information read from the magnetic recording medium.

Since such a magnetic recording / reproducing head 48 is constituted by the magnetoresistive element of the present invention as described above, the production yield of the magnetoresistive element is high, so that the cost can be reduced. Further, since there is no short circuit between the electrodes of the magnetoresistive effect element, high performance can be realized.

Next, an embodiment of the magnetic recording system of the present invention will be described. FIG. 21 is a perspective view showing the magnetic recording system of the embodiment. In the figure, the same elements as those in FIG. 20 are denoted by the same reference numerals. The magnetic recording system 72 shown in FIG. 21 is configured by fixing the magnetic recording / reproducing head 48 shown in FIG. 20 to a substrate 66, and the reproducing head 52 and the recording head 60 constituting the magnetic recording / reproducing head 48 are each formed of an ABS. 62 and magnetic gap 64
The (FIG. 20) side is close to and opposes the surface of the magnetic recording medium 68. Specifically, each head and the surface of the magnetic recording medium 68 are at a distance of 0.2 μm or less or are in contact with each other.

In this embodiment, the magnetic recording medium 68 is formed in a disk shape and rotates at a high speed. On the other hand, the substrate 66
Is moved in the radial direction of the magnetic recording medium 68 by a driving unit (not shown), and is positioned at the position of the selected track. Then, the reproducing head 52 reads the magnetic information recorded on the magnetic recording medium 68 by detecting the leakage magnetic field 70 and outputs a corresponding electric signal.

The magnetic recording system 72 is constituted by using the magnetic recording / reproducing head 48. Therefore, the same effect as that of the magnetic recording / reproducing head 48 can be obtained in the magnetic recording system 72. In addition, high performance can be achieved in terms of sensitivity of reading information from a magnetic recording medium.

[0072]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Specific materials, dimensions, conditions, and the like when the above-mentioned magnetic recording / reproducing head is prototyped are shown below. As the magnetoresistive film, / Ta (3 nm) / Ni82Fe18 (4
nm) / Co90Fe10 (0.5 nm) / Al oxide (0.7 nm) / Co90Fe10 (2 nm) / Ru
(0.6 nm) / Co90Fe10 (1.5 nm) / P
t46Mn54 (12 nm) / Ta (3 nm) was used.

After the formation of the magnetoresistive film, a heat treatment at 250 ° C. for 5 hours is performed at 500 Oe in a direction orthogonal to the magnetic field at the time of film formation.
This was performed while applying a magnetic field of. In the patterning of the magnetoresistive film at the time of the prototype of the head, the patterning was stopped in the middle of the nonmagnetic layer, and a part (lower part) of the nonmagnetic layer and the free layer were not patterned. The patterning was performed by milling the magnetoresistive film in a pure Ar gas atmosphere of 0.3 Pa using a normal milling device. Milling was performed from a direction perpendicular to the film surface.

The following components were used as components of the magnetic recording / reproducing head. Substrate: A laminate of alumina having a thickness of 10 μm on an altic having a thickness of 1.2 mm. <Reproducing head>-Lower shield layer: Co89Zr4Ta4Cr3 (1μ
m) Composition is at%, the same applies hereinafter). -Lower gap layer: alumina (20 nm). -Lower gap thickening layer ... Alumina (40 nm). -Lower electrode layer: Ta (1.5 nm) / Cu (40 nm)
/ Ta (3 nm). -Lower electrode thickening layer: Ta (1.5 nm) / Au (40
nm) / Ta (3 nm). -Corrosion prevention layer (layer for preventing corrosion or peeling of the lower electrode layer) ... Each material (50 nm) in [Table 1]. Insulating layer: Alumina (40 nm).・ Vertical bias layer: Cr (10 nm) /Co74.5C
r10.5Pt15 (24 nm) First upper electrode layer Ta
(20 nm). Second upper electrode layer: Ta (1.5 nm) / Au (40
nm) / Ta (3 nm). -Upper electrode thickening layer: Ta (1.5 nm) / Au (40
nm) / Ta (3 nm). -Upper gap layer: alumina (40 nm). -Upper gap thickening layer: alumina (40 nm).・ Upper shield layer: Common to the lower pole of the recording head (common pole).

<Recording Head>-Common pole base: Ni82Fe18 (90 nm).・ Common pole ... Ni82Fe18 (2.5μm) /
Co65Ni12Fe23 (0.5 μm). Recording gap: alumina (0.2 μm).・ Gap thickness: Alumina (0.7 μm) ・ Coil base: Cr (30 nm) / Cu (150 n)
m. Coil: Cu (4.5 μm). -Upper pole base: Ti (10 nm) / Co65Ni
12Fe23 (0.1 μm. ・ Upper pole: Co65Ni12Fe23 (0.5 μm)
m) / Ni82Fe18 (3.5 μm).・ Terminal substrate: Cr (30 nm) / Cu (150 n
m). Terminal: Cu (50 μm).・ Overcoat: alumina (52 μm).・ Gold terminal base: Ti (10 nm) / Ni82Fe1
8 (0.1 μm). Gold terminals: Au (3 μm).

The procedure for producing the reproducing head and the recording head was as follows. [1] Reproduction head Substrate cleaning → lower shield film formation and annealing → alignment mark formation (photoresist formation → patterning →
Resist removal) → lower shield patterning (photoresist formation → taper processing → resist removal) → lower gap formation (photoresist formation → film formation → lift-off) → lower gap thickening (photoresist formation → film formation → lift-off) → lower Electrode layer formation (film formation → photoresist formation → milling (the photoresist is not removed here)) → lower electrode corrosion prevention layer formation (lower electrode corrosion prevention layer formation → photoresist removal) → lower electrode thick formation (photo Resist formation →
Film formation → lift off) → Vertical bias film formation (photoresist formation → film formation → lift off) → Magnetoresistance effect element and first upper electrode formation (Magnetoresistance effect film formation → first upper electrode film formation → photoresist formation → Milling up to the underlayer of the magnetoresistive effect, and at the same time re-adhering to the side of the magnetoresistive element
Adjustment milling for reattachment on the end surface of the magnetoresistive element side → Adjustment milling for reattachment on the end surface opposite to the ABS of the magnetoresistive element → Insulation layer formation (film formation → lift-off) → Drilling of insulation layer and barrier layer ( Photoresist formation → Milling → Photoresist removal → Second upper electrode formation (Photoresist formation → Film formation → Lift off) → Pole height monitor formation (Photoresist formation → Film formation → Lift off) → Upper electrode thickening (Photoresist formation → film formation → lift-off) → upper gap formation (photoresist formation → film formation → lift-off) → upper gap thick formation (photoresist formation → film formation → lift-off).

[2] Recording head common pole formation (second base film formation → frame photoresist formation → common pole plating → cover photoresist formation → chemical etching → base removal) → pole height filling resist → gap film → gap thickness Addition formation (photoresist formation → film formation → lift-off) → PW (pole for magnetically connecting the upper pole and the common pole) formation (photoresist formation → milling → photoresist removal) → coil formation SC1 resist (coil formation) Resist for ensuring insulation 1) formation → coil formation (underlayer formation → photoresist formation → coil plating → chemical etching → removal of base) → SC2 resist (resist for securing coil insulation 2) Formation → Gap adjustment milling → Upper pole formation (underlayer deposition → frame Resist formation → upper pole plating → plating annealing → base removal →
Cover photoresist formation → chemical etching → base removal) → terminal formation (base formation → photoresist formation → terminal plating → chemical etching → base removal) → overcoat formation → terminal wrap → gold terminal plating (base formation → photo) Resist formation → gold terminal plating → base removal).

[3] Post-process row cutting → ABS surface processing lap → D to ABS surface 14
LC film → slider processing → mounting on suspension.

Using such a magnetic recording / reproducing head, C
Recording and reproduction of information were performed on an oCrTa-based magnetic recording medium. At this time, the write track width was 3 μm, and the read track width was 2 μm. The photoresist hardening process at the time of forming the coil portion of the write head portion was performed at 220 ° C. for 2 hours. The coercive force of the medium is 5.0 kOe, and MrT is 0.
It was 35 memu / cm ² . With the same configuration, the type of the lower electrode end corrosion prevention layer was changed, and 100 heads were manufactured on a trial basis, and the yield rate was compared. The results are shown in [Table 1]. Here, the non-defective rate was defined as a value (%) obtained by dividing the total number of prototype heads having a head resistance of 45 to 50 Ω and a reproduction output of 3 mV or more by 100 in total.

[0080]

[Table 1]

In this table, the non-defective rate in the case of none is
This is a non-defective rate in the case where the corrosion prevention layer (layer for preventing corrosion or peeling of the lower electrode layer) of the present invention was not provided. While the non-defective rate is extremely low at 4%, the non-defective rate is improved by one digit or more in any case where the corrosion prevention layer is provided.

The yield rate was 6 due to the difference in the material of the corrosion prevention layer.
Although it varies between 2% and 86%, this is a value that falls within the range of variation in the non-defective rate in head manufacturing, and it cannot be said from this result that any material is good. However, as compared with the case where the corrosion prevention layer is not formed as in the conventional case, there is a difference of one order or more, which is a superior difference exceeding the manufacturing error. Therefore, by forming the corrosion prevention layer according to the present invention, the lower electrode layer Ta /
It can be said that the corrosion of the Cu / Ta end portion during the process is prevented, and the yield rate is remarkably improved.

Further, a head having the same configuration was manufactured as a trial by changing the material of the lower electrode, and the difference in the yield rate was examined. Here, an Al oxide (50 nm) was used as the corrosion prevention layer, and the above-described components were used for other configurations. The lower electrode layer is made of Ta (1.5 n
m) / lower electrode material (40 nm) / Ta (3.0 nm), and the lower electrode material was changed. Table 2 shows the relationship between the lower electrode material and the yield rate. The non-defective rate is a high value of 68 to 86%. The susceptibility to corrosion or peeling differs depending on the material of the lower electrode, but the lower electrode corrosion prevention layer prevents corrosion or peeling of the edge of the lower electrode layer. The decrease is suppressed, and even if the type of the lower electrode material is changed, the non-defective rate is a high value which does not largely change.

[0084]

[Table 2]

Next, a description will be given of a magnetic recording system (magnetic disk device) prototyped by applying the present invention. The prototype magnetic recording system has three magnetic recording media (magnetic disks) on a base and a head drive circuit, a signal processing circuit, and an input / output interface on the back of the base. It is connected to the outside by a 32-bit bus line. Six magnetic recording / reproducing heads according to the present invention are arranged on both sides of the magnetic recording medium.

As a driving means of the magnetic recording / reproducing head, a rotary actuator, a drive and control circuit therefor, and a motor directly connected to a spindle for rotating a disk are mounted. The diameter of the magnetic recording medium is 46 mm, and the data surface has a diameter of 10 mm to 40 mm.
Since an embedded servo system is used and there is no servo surface, high density can be achieved. This system can be directly connected as an external storage device of a small computer.
The input / output interface is equipped with a cache memory and corresponds to a bus line having a transfer rate in the range of 5 to 20 megabytes per second. In addition, a large-capacity magnetic recording system can be configured by installing an external controller and connecting a plurality of the present systems.

[0087]

As described above, according to the present invention, a lower electrode layer formed directly or via another layer on a lower shield layer or serving also as a lower shield layer, A magnetoresistive effect film having a magnetoresistive effect film formed in a partial region, and an upper electrode layer formed above the lower electrode layer and having at least a part of a lower surface extending in contact with an upper surface of the magnetoresistive film; An element, on the upper surface of the lower shield layer or on the upper surface of the lower gap layer, preventing corrosion or peeling of a lower electrode layer formed around the lower electrode layer and in contact with an edge of the lower electrode layer. It is characterized by including a layer to be formed.

According to the present invention, there is also provided a method according to the present invention, wherein the lower electrode layer is formed directly or via another layer on the lower shield layer, or serves as the lower shield layer; Having a magnetoresistive film formed in a partial region of the magnetoresistive film and an upper electrode layer formed above the lower electrode layer and extending at least partially on the lower surface in contact with the upper surface of the magnetoresistive film. In the method of manufacturing an effect element, when forming the lower electrode layer, first, a lower electrode film as the lower electrode layer is first formed on the upper surface of the lower shield layer, or on the upper surface of the lower gap layer, Subsequently, a photoresist layer is formed on the lower electrode film and patterned to form the lower electrode layer. Thereafter, the lower electrode layer is formed around the lower electrode layer in contact with an edge of the lower electrode layer. After forming a layer to prevent corrosion or peeling, the photoresist And removing the layer.

Further, the magnetoresistive detection system of the present invention
A lower electrode layer formed directly or via a lower gap layer on the lower shield layer; a magnetoresistive film formed in a partial region on the lower electrode layer; An upper electrode layer that is formed and at least a part of the lower surface extends in contact with the upper surface of the magnetoresistive effect film, and the upper surface of the lower shield layer, or the upper surface of the lower gap layer around the lower electrode layer. A magnetoresistance effect element including a layer for preventing corrosion or peeling of the lower electrode layer formed in contact with an edge of the lower electrode layer; and further, a current is supplied between the lower electrode layer and the upper electrode layer. Current supply means; and a resistivity detection means for detecting a change in resistivity of the magnetoresistive element based on a current flowing between the lower electrode layer and the upper electrode layer by the current supply means. I do.

In the magnetic recording system of the present invention, the lower electrode layer is formed on the lower shield layer directly or via the lower gap layer, and the lower electrode layer is formed in a part of the lower electrode layer. A magnetoresistive film, an upper electrode layer formed above the lower electrode layer and extending at least part of the lower surface in contact with the upper surface of the magnetoresistive film, and the upper surface of the lower shield layer, or A magnetoresistive element including a layer for preventing corrosion or peeling of the lower electrode layer formed on the upper surface of the lower gap layer and in contact with an edge of the lower electrode layer around the lower electrode layer; Detecting a change in resistivity of the magnetoresistive element based on a current flowing between the electrode layer and the upper electrode layer and a current flowing between the lower electrode layer and the upper electrode layer by the current flowing means; Resistance detecting means The magnetoresistive element is arranged in close proximity to an information recording surface of a magnetic recording medium on which a plurality of tracks for recording information are formed, and a driving unit detects the magnetoresistive effect element. It is moved to a position.

In the method of manufacturing a magnetoresistive element according to the present invention, as described above, the photoresist layer formed on the lower electrode film in order to form the lower electrode film by patterning the lower electrode film includes the above-mentioned lower electrode film. After formation of the layer that prevents corrosion or delamination of the layer, it is removed, for example, with a stripper solution. Therefore, since the edge of the lower electrode layer is covered with a layer that prevents corrosion or peeling of the lower electrode layer, the lower electrode layer is not exposed to the stripper solution in which the photoresist is dissolved, and the lower electrode layer is not exposed as in the related art. There is no problem that the layer edge is corroded or peeled and the roughness is increased. As a result, an electrical short circuit between the lower electrode layer and the upper electrode layer does not occur, and a high-performance magnetoresistive element with improved production yield and high detection sensitivity can be obtained.

The magnetoresistive element of the present invention can be manufactured based on such a method of manufacturing a magnetoresistive element of the present invention, and an electric short circuit between the lower electrode layer and the upper electrode layer can be prevented. Since such a phenomenon does not occur, it is possible to realize a high-performance magnetoresistive element having improved manufacturing yield and high detection sensitivity.

Further, in the magnetoresistive detection system of the present invention, the resistivity of the magnetoresistive film changes due to the change in the strength and direction of the magnetic field, and as a result, the current flowing between the lower electrode layer and the upper electrode layer. The magnitude of the flowing current changes. The resistivity detection means detects a change in resistivity based on the change in current. Since the magnetoresistive detection system of the present invention is constituted by a magnetoresistive effect element having the same structure as the magnetoresistive effect element of the present invention, the manufacturing yield of the magnetoresistive effect element is high, so that the cost can be reduced. Yes,
Further, since there is no short circuit between the electrodes of the magnetoresistive effect element, high performance can be realized.

Further, in the magnetic recording system of the present invention, the magnetoresistive element arranged close to the information recording surface of the magnetic recording medium is moved to the position of the selected track by the driving means, and the necessary information is moved. Is read. Since the magnetic resistance detection system constituting the magnetic recording system of the present invention has the same configuration as the magnetic resistance detection system of the present invention, the magnetic recording system of the present invention can provide the same effects as those of the magnetic resistance detection system of the present invention. Thus, high performance can be realized in terms of cost, cost, and sensitivity for reading information from a magnetic recording medium.

[Brief description of the drawings]

FIG. 1 is a sectional side view showing an example of a magnetoresistance effect element according to the present invention.

FIG. 2A shows in detail the vicinity of the magnetoresistive film, FIG.
FIG. 3 is a cross-sectional side view taken along line A ′.

FIGS. 3A and 3B are plan views showing steps in a method of manufacturing a magnetoresistive element according to an embodiment.

FIGS. 4A and 4B are plan views showing steps in a method of manufacturing a magnetoresistive element according to an embodiment.

FIGS. 5A and 5B are plan views showing steps in a method of manufacturing a magnetoresistive element according to an embodiment.

FIGS. 6A and 6B are plan views showing steps in a method of manufacturing a magnetoresistive element according to an embodiment.

FIGS. 7A and 7B are plan views showing steps in a method for manufacturing a magnetoresistive element according to an embodiment.

FIG. 8 is a plan view showing one step in a method of manufacturing the magnetoresistive element of the embodiment.

FIG. 9 is a cross-sectional side view showing a magnetoresistive element of another embodiment having a different structure of a magnetoresistive film.

FIG. 10 is a cross-sectional side view showing a magnetoresistive element of still another embodiment having a different structure of a magnetoresistive film.

FIG. 11 is a cross-sectional side view showing a magnetoresistive element of another embodiment having a different structure of a magnetoresistive film.

FIG. 12 is a sectional side view showing a modification of the magnetoresistive element of FIG. 11;

FIG. 13 is a sectional side view showing a modification of the magnetoresistive element of FIG. 11;

FIG. 14 is a sectional side view showing a modification of the magnetoresistive element of FIG. 11;

FIG. 15 is a sectional side view showing a modification of the magnetoresistive element of FIG. 11;

FIG. 16 is a sectional side view showing a modification of the magnetoresistive element of FIG. 11;

FIG. 17 is a sectional side view showing another embodiment of the magnetoresistive element of the present invention.

FIG. 18 is a sectional side view showing still another embodiment of the magnetoresistive element of the present invention.

FIG. 19 is a sectional side view showing still another embodiment of the magnetoresistance effect element of the present invention.

FIG. 20 is a perspective view showing a magnetoresistive detection system according to an embodiment.

FIG. 21 is a perspective view showing a magnetic recording system of an embodiment.

FIG. 22 is a cross-sectional side view showing an example of a magnetoresistive element constituting a conventional magnetoresistive sensor.

FIG. 23 is a cross-sectional side view showing the magnetoresistive element in a state immediately after patterning the lower electrode layer.

[Explanation of symbols]

2 ... Magnetoresistance effect element, 4 ... Lower shield layer, 6 ...
Lower gap layer, 8: lower electrode layer, 10: magnetoresistive film, 12: upper electrode layer, 14: ABS surface, 16: corrosion prevention layer (layer for preventing corrosion or peeling of lower electrode layer) ), 18 ... edge, 20 ... edge, 22 ... first upper electrode layer, 24 ... second upper electrode layer, 26 ... lower surface, 28
...... top surface, 291 free layer, 30 upper gap layer, 31 upper shield layer, 32 free layer, 34
... nonmagnetic layer, 35 ... insulating layer, 36 ... fixed layer, 38 ...
... fixed layer, 39 ... upper layer, 40 ... vertical bias layer,
42 ... Magnetoresistance effect element, 44 ... Magnetoresistance effect element, 46 ... Magnetoresistance effect element, 48 ... Magnetic recording / reproducing head, 50 ... Base, 52 ... Reproduction head, 54 ...
Magnetic pole, 56: Coil, 58: Upper magnetic pole, 60: Recording head, 62: ABS surface, 64: Magnetic gap, 6
6 ... substrate, 68 ... magnetic recording medium, 70 ... magnetic field, 7
2 ... magnetic recording system, 102 ... magnetoresistive element, 104 ... lower shield layer, 106 ... lower gap layer, 108 ... lower electrode layer, 110 ... magnetoresistive film,
112 ... upper electrode layer, 114 ... first upper electrode layer, 11
6 second upper electrode layer, 118 ABS surface, 120
... a photoresist layer, 122 ... an edge, 124 ... an insulating layer.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Nobuyuki Asbestos 5-7-1 Shiba, Minato-ku, Tokyo Inside NEC Corporation (72) Inventor Masafumi Nakata 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation (72) Inventor Eizo Fukami 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation (72) Inventor Hiroaki Honjo 5-7-1 Shiba, Minato-ku, Tokyo NEC (72) Inventor Hisashige Tsuge 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation Inside (72) Inventor Atsushi Kamijo 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation In company

Claims (20)

[Claims] 1. A lower electrode layer which is formed directly or via another layer on a lower shield layer, or which is also formed as a lower shield layer, and a magnetic layer formed in a partial region on the lower electrode layer. A magnetoresistive element having a resistive effect film and an upper electrode layer formed above the lower electrode layer and at least a part of the lower surface extends in contact with the upper surface of the magnetoresistive effect film, wherein the lower shield layer And a layer for preventing corrosion or peeling of the lower electrode layer formed in contact with the edge of the lower electrode layer around the lower electrode layer on the upper surface of the lower gap layer. Magnetoresistive element. 2. The magnetoresistive element according to claim 1, wherein an end face of the layer for preventing corrosion or peeling of the lower electrode layer on the lower electrode layer side is in contact with an end face of the lower electrode layer. . 3. The magnetic layer according to claim 1, wherein an edge of the layer for preventing corrosion or peeling of the lower electrode layer on the lower electrode layer side is formed on an edge of the lower electrode layer. Resistance effect element. 4. An upper electrode layer comprising a first and a second upper electrode layer, wherein the first upper electrode layer is formed on the magnetoresistive film in substantially the same region as the magnetoresistive film. 2. The magnetoresistive element according to claim 1, wherein the second upper electrode layer is formed above the lower electrode layer, and a part of the lower surface is in contact with the upper surface of the first upper electrode layer. 5. The lower shield layer is formed on a base,
2. The magnetoresistive element according to claim 1, wherein said lower electrode layer extends in a partial region on said lower shield layer. 6. The magnetoresistive element according to claim 1, wherein the lower shield layer and the lower electrode layer are also used. 7. The lower shield layer is formed on a base,
2. The magnetoresistive effect according to claim 1, wherein the lower gap layer is formed on the lower shield layer, and the lower electrode layer extends in a partial region above the lower gap layer. element. 8. The magnetoresistive element according to claim 1, wherein an upper shield layer is formed on the upper electrode layer. 9. The magnetoresistive element according to claim 1, wherein the upper shield layer and the upper electrode layer are also used. 10. The magnetoresistive element according to claim 8, wherein an upper gap layer is interposed between said upper electrode layer and said upper shield layer. 11. The vertical bias layer according to claim 1, wherein a vertical bias layer is formed on at least a part of the lower electrode layer on both sides of the magnetoresistive film in contact with the magnetoresistive film. Magnetoresistive element. 12. The layer for preventing corrosion or peeling of the lower electrode layer is a single-layer film made of a metal, an oxide, and a nitride, a mixed film made of a mixture of an oxide and a nitride, or a metal, 2. The magnetoresistive element according to claim 1, wherein the magnetoresistive element is formed of a multilayer film including a plurality of oxides, nitrides, and mixtures of oxides and nitrides. 13. The device according to claim 1, wherein said magnetoresistive effect film is formed of a ferromagnetic tunnel junction film.
The magnetoresistive effect element as described in the above. 14. The free layer formed on the lower electrode layer, a non-magnetic layer formed on the free layer, a fixed layer formed on the non-magnetic layer, 2. The magnetoresistive element according to claim 1, further comprising a fixed layer formed on said fixed layer to fix the direction of magnetization in said fixed layer. 15. The magneto-resistance effect film includes a free layer formed below the upper electrode layer, a non-magnetic layer formed below the free layer, a fixed layer formed below the non-magnetic layer, 2. The magnetoresistive element according to claim 1, further comprising a fixed layer formed below the fixed layer to fix the direction of magnetization in the fixed layer. 16. A lower electrode layer formed directly or via another layer on the lower shield layer, or a lower electrode layer serving also as a lower shield layer, and a magnetic layer formed in a partial region on the lower electrode layer. A method for manufacturing a magnetoresistive element having a resistance effect film and an upper electrode layer formed above the lower electrode layer and extending at least a part of the lower surface in contact with the upper surface of the magnetoresistive effect film, When forming the lower electrode layer, first form a lower electrode film as the lower electrode layer on the upper surface of the lower shield layer, or on the upper surface of the lower gap layer, and then, on the lower electrode film A photoresist layer was formed and patterned to form the lower electrode layer, and thereafter, a layer was formed around the lower electrode layer in contact with an edge of the lower electrode layer to prevent corrosion or peeling of the lower electrode layer. Removing the photoresist layer above Manufacturing method of the gas-resistance effect element. 17. The layer for preventing corrosion or peeling of the lower electrode layer may be a single-layer film made of a metal, an oxide, and a nitride, a mixed film made of a mixture of an oxide and a nitride, or a metal, 17. The method of manufacturing a magnetoresistive element according to claim 16, wherein the method is formed of a multilayer film including a plurality of oxides, nitrides, and mixtures of oxides and nitrides. 18. The method according to claim 16, wherein the photoresist layer formed on the lower electrode film is patterned by milling. 19. A lower electrode layer formed directly or via a lower gap layer on a lower shield layer; a magnetoresistive effect film formed in a partial region on the lower electrode layer; An upper electrode layer which is formed above the electrode layer and at least a part of the lower surface extends in contact with the upper surface of the magnetoresistive film, and the upper surface of the lower shield layer, or the lower surface of the lower gap layer. A magnetoresistance effect element including a layer for preventing corrosion or peeling of the lower electrode layer formed in contact with an edge of the lower electrode layer around the electrode layer, further comprising: a lower electrode layer and the upper electrode layer. And a resistivity detecting means for detecting a change in resistivity of the magnetoresistive element based on a current flowing between the lower electrode layer and the upper electrode layer by the conducting means. The magnetoresistive detection system Temu. 20. A lower electrode layer formed directly or via a lower gap layer on a lower shield layer; a magnetoresistive effect film formed in a partial region on the lower electrode layer; An upper electrode layer which is formed above the electrode layer and at least a part of the lower surface extends in contact with the upper surface of the magnetoresistive film, and the upper surface of the lower shield layer, or the lower surface of the lower gap layer. A magnetoresistance effect element including a layer for preventing corrosion or peeling of the lower electrode layer formed in contact with the edge of the lower electrode layer around the electrode layer, further comprising the lower electrode layer and the upper electrode layer And a resistivity detecting means for detecting a change in resistivity of the magnetoresistive element based on a current flowing between the lower electrode layer and the upper electrode layer by the conducting means. Configured with a reluctance detection system Wherein the magnetoresistive element is disposed close to an information recording surface of a magnetic recording medium on which a plurality of tracks for recording information are formed, and is moved to a position of the selected track by a driving unit. A magnetic recording system characterized by the above.