JP2005159370A - Magnetoresistance effect element, magnetoresistance effect head, magnetoresistance conversion system and magnetic recording system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element, a magnetoresistance effect head, a magnetoresistance conversion system and a magnetic recording system wherein sense current is prevented from flowing in a vertical bias layer, noises in a regenerating wave is little, and S/N ratio and bit error rate are superior. <P>SOLUTION: In the direction of a magnetic field impressed by the vertical bias layer 2b, the length of a free layer 3b is made longer than the length of a fixed layer 5, and the free layer 3b is located near the vertical bias layer 2b while keeping length between the fixed layer 5 and the vertical bias layer 2b. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention includes a magnetoresistive effect element for recording an information signal on a magnetic recording medium, reading and reproducing the information signal, a magnetoresistive effect head provided with the magnetoresistive effect element, and the magnetoresistive effect head. The present invention relates to a magnetoresistive conversion system and a magnetic recording system including the magnetoresistive conversion system, and more particularly to a magnetoresistive effect element using a ferromagnetic tunnel junction and having less noise of a reproduction signal.

  Conventionally, a magnetic read transducer called a magneto-resistive sensor (hereinafter referred to as MR sensor) or a head has been disclosed, and the magnetic read transducer can read data from a magnetic surface with a large linear density. . The MR sensor changes the electric resistance value as a function of the intensity and direction of magnetic flux applied from the outside to the reading element, and detects the magnetic field signal by measuring the change in the electric resistance value.

  In such a conventional MR sensor, an anisotropic magnetic element in which a change component of the electric resistance value of the reading element changes in proportion to the square of the cosine of the angle between the magnetization direction and the direction of the sense current flowing through the reading element. It operates based on the resistance effect (Anisotropic Magneto-Resistance effect, hereinafter referred to as AMR effect). A more detailed description of the AMR effect can be found in Non-Patent Document 1 (DA Thompson, IEE, Transactions on Magnetics, MAG-11, Vol. No. 4, page 1039, 1975, "Memory, Storage, and Related Applications").

  Also, recently, the change in electrical resistance of laminated magnetic sensors has become more prominent due to the spin-dependent transmission of conduction electrons between magnetic layers via nonmagnetic layers and the accompanying spin-dependent scattering at the layer interface. The effect is disclosed. This magnetoresistive effect is called by various names such as “giant magnetoresistive effect” and “spin valve effect”. Such a magnetoresistive sensor is made of a suitable material, has improved detection sensitivity and a large change in electric resistance value as compared with that observed with a sensor using the AMR effect. In this type of MR sensor, the in-plane resistance between a pair of ferromagnetic layers separated by a nonmagnetic layer changes in proportion to the cosine of the angle between the magnetization directions of the pair of ferromagnetic layers. . Japanese Patent Application Laid-Open No. 2-61572, whose priority is claimed in June 1988, describes a laminated magnetic structure that causes a high MR change caused by antiparallel alignment of magnetization directions in a magnetic layer.

  On the other hand, in recent years, a phenomenon has been discovered in which the electrical resistance value changes due to the relative change in the magnetization direction of the ferromagnetic material located above and below the ultrathin insulating layer (barrier layer) through which the tunnel current flows, and the ferromagnetic layer, barrier layer, The laminated structure of the ferromagnetic layer is named as a ferromagnetic tunnel junction. The ferromagnetic tunnel junction is introduced in, for example, Non-Patent Document 2 (Journal of Applied Physics, Vol. 79 (8), No. 15, p. 4724, 1996). Yes.

  However, in a shielded element using a ferromagnetic tunnel junction, a sense current for detecting a change in the electric resistance value of the element needs to flow vertically to the tunnel junction. However, in a structure similar to a shield-type element using a conventional spin valve, the sense current flows through the longitudinal bias layer for controlling the magnetic domain of the free layer arranged in the vicinity of the tunnel junction, and the tunnel junction There is a problem in that the current flowing through is reduced and the change in electrical resistance value is reduced.

  In order to solve this problem, in Patent Document 1 (Japanese Patent Laid-Open No. 10-162327), the priority of which is claimed on November 27, 1996, a longitudinal bias layer in a reproducing head using a ferromagnetic tunnel junction film is disclosed. Has been disclosed that has a structure that does not contact the free layer.

  FIG. 106 is a partial cross-sectional view of a conventional ferromagnetic tunnel head described in Patent Document 1. In FIG. FIG. 106 shows a structure in which the insulating layer 11 is disposed between the longitudinal bias layer 2b and the free layer 3b in the patterned ferromagnetic tunnel junction element, that is, the magnetoresistive effect element 30. . Thereby, it is possible to prevent the sense current from flowing to the vertical bias layer 2b.

  However, in this magnetoresistive effect element 30, since the insulating layer 11 disposed between the vertical bias layer 2b and the free layer 3b also acts as a magnetic separation layer, the vertical layer having a sufficient size for the free layer 3b. It is difficult to apply a bias magnetic field. For this reason, the magnetic domain of the free layer 3b is not sufficiently controlled, and as a shield type sensor, hysteresis increases on the RH loop, and when magnetic information on the recording medium is reproduced, a reproduced signal with much noise is generated. There is a point.

  In order to solve this problem, in Patent Document 2 (Japanese Patent Laid-Open No. 10-255231) in which priority is claimed on March 7, 1997, a longitudinal bias layer in a reproducing head using a ferromagnetic tunnel junction film is disclosed. A structure is disclosed that contacts the free layer.

  107 and 108 are partial cross-sectional views of the ferromagnetic tunnel head described in Patent Document 2. FIG. 107 and 108, in the laminated body composed of the free layer 3b, the nonmagnetic layer 4 and the fixed layer 5, the longitudinal bias layer 2b is in direct contact with either end of the free layer 3b or the fixed layer 5. The structure is shown.

D. A. Thompson, IEEE, Transactions on Magnetics, MAG-11, No. 4, page 1039, 1975, “Memory, Storage, and Related Applications "" Journal of Applied Physics 79 (8), No. 15, p. 4724, 1996 Japanese Patent Laid-Open No. 10-162327 Japanese Patent Laid-Open No. 10-255231

  However, the structure shown in FIGS. 107 and 108 has the following problems. As described in the section of the embodiment of the present invention, when the reproducing head was actually manufactured aiming at the structure shown in FIGS. 107 and 108, the sense current flowed to the longitudinal bias layer 2b, and the nonmagnetic layer 4 It did not flow sufficiently, and a sufficient output of sense current could not be obtained. When the output is small, the (S / N) ratio and the bit error rate cannot be obtained sufficiently. Therefore, in this structure, in principle, it should be possible to prevent the sense current from flowing into the longitudinal bias layer 2b and bypassing the nonmagnetic layer 4, but the longitudinal bias layer 2b includes the free layer 3b, the nonmagnetic layer 4 and Since the laminated body composed of the fixed layers 5 is disposed in the vicinity of the end of the nonmagnetic layer 4, this structure can prevent the sense current from flowing into the longitudinal bias layer 2 b and bypassing the nonmagnetic layer 4. It is difficult to produce accurately.

  The present invention has been made in view of such problems, and prevents a sense current from flowing in a longitudinal bias layer, reduces noise in a reproduced waveform, and has a good (S / N) ratio and bit error rate. It is an object of the present invention to provide a resistive element, a magnetoresistive head, a magnetoresistive conversion system, and a magnetic recording system.

  The magnetoresistive effect element according to the present invention includes a lower conductive layer, a fixed layer provided on the lower conductive layer and having a fixed magnetization direction, a first nonmagnetic layer provided on the fixed layer, A free layer which is provided on the first nonmagnetic layer and whose magnetization direction is changed by an applied magnetic field; a first magnetic layer which is provided on the free layer and is magnetically coupled to the free layer; A second magnetic layer provided on the first magnetic layer and magnetically coupled to the first magnetic layer; and a longitudinal bias layer for applying a magnetic field to the first and second magnetic layers. A sense current for detecting a change in electrical resistance value of the first nonmagnetic layer flows substantially perpendicularly to the first nonmagnetic layer.

  In addition, it is preferable that the first magnetic layer and the second magnetic layer each have a length in a magnetic field direction applied by the longitudinal bias layer that is greater than or equal to the length of the free layer.

  Further, a second nonmagnetic layer is provided between the free layer and the first magnetic layer, and a third nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. Can be provided. In addition, an immobilization layer base layer may be provided under the immobilization layer.

  In the present invention, a longitudinal bias magnetic field is applied from a longitudinal bias layer to a three-layer film composed of a first magnetic layer, a third nonmagnetic layer, and a second magnetic layer, and is free from the three-layer film. Can be applied to the layer. As described above, the longitudinal bias magnetic field applied to the free layer can be easily controlled by applying the longitudinal bias magnetic field from the longitudinal bias layer to the free layer in two stages.

  Furthermore, the product of the saturation magnetization and the film thickness in the first magnetic layer is substantially equal to the product of the saturation magnetization and the film thickness in the second magnetic layer, and the first magnetic layer, the first magnetic layer, The three-layer film composed of three nonmagnetic layers and the second magnetic layer can be a laminated antiferromagnetic material.

  As a result, the three-layer film has no sensitivity to the magnetic field, and only the free layer has sensitivity to the magnetic field. Therefore, the reproduction track width when this magnetoresistive effect element is applied to the reproduction head is determined only by the width of the free layer, and the effective track width can be prevented from widening. Note that “substantially equal” means that the effect of reducing the sensitivity of the three-layer film to a magnetic field is recognized.

  Further, it is preferable that at least a part of the first magnetic layer is in direct contact with the longitudinal bias layer. Alternatively, a first magnetic layer underlayer may be provided under the first magnetic layer, and the first magnetic layer underlayer may be in contact with the vertical bias layer. A layer protective layer may be provided so that the longitudinal bias protective layer is in contact with the first magnetic layer or the first magnetic layer underlayer. Similarly, at least part of the second magnetic layer is preferably in direct contact with the longitudinal bias layer. Alternatively, a second magnetic layer underlayer may be provided under the second magnetic layer, and the second magnetic layer underlayer may be in contact with the vertical bias layer. You may make it contact 2 magnetic layers or the said 2nd magnetic layer base layer.

  The magnetoresistive head according to the present invention includes the magnetoresistive element, a lower shield layer serving as a base material of the magnetoresistive element, and the magnetoresistive element provided on the magnetoresistive element. An upper conductive layer for inputting a sense current for detecting a change in electric resistance value of the effect element and an upper shield layer provided on the upper conductive layer are provided.

  The magnetoresistive conversion system according to the present invention includes the magnetoresistive head, a current generating circuit that supplies a sense current to the magnetoresistive head, and a change in electrical resistance of the magnetoresistive head to detect the magnetoresistive effect. And a data reading circuit for obtaining a magnetic field applied to the head.

  The magnetic recording system according to the present invention includes the magnetoresistive conversion system, a magnetic recording medium having a plurality of tracks for recording and reproducing data by the magnetoresistive conversion system, and a selected track in the magnetic recording medium. A first actuator for moving the magnetoresistive conversion system to a position where it is placed; and a second actuator for rotationally driving the track.

  According to the present invention, it is possible to obtain a magnetoresistive head having a smaller reproduction waveform noise than the conventional one and having a good (S / N) ratio and bit error rate. Further, by using this magnetoresistive head, it is possible to obtain a high-performance magnetic recording / reproducing device and magnetic storage device.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The partial sectional views used in the examples of the present invention are all partial sectional views in which the magnetoresistive head is cut in parallel with the air bearing surface. Further, in the embodiment of the present invention, the expression “patterning” a layer or the like means that a part of the layer or the like is removed by etching or the like in the region shown in the illustrated cross section. It does not indicate that a part of the layer or the like is left behind and removed by means of etching or the like in a cross section or region (not shown). That is, in the embodiment of the present invention, even if the layer or the like is not described as “patterned”, a part of the layer or the like is removed by a means such as etching in a cross section or region not shown. There may be cases.

  The magnetoresistive head according to the first embodiment of the present invention and the manufacturing method thereof will be described. 1 to 7 are partial cross-sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, as shown in FIG. 1, a lower shield layer 16 and a lower conductive layer 1 are sequentially formed on a substrate (not shown).

  Next, as shown in FIG. 2, a photoresist 20 having an opening 20 a is formed on the lower conductive layer 1, the lower conductive layer 1 is etched by means such as dry etching, and a recess is formed on the surface of the lower conductive layer 1. 1a is formed.

  Next, as shown in FIG. 3, the vertical bias layer base layer 2a and the vertical bias layer 2b are formed on the concave portion 1a of the lower conductive layer 1 so as to be partially embedded in the concave portion of the lower conductive layer 1, and thereafter The photoresist 20 is removed.

  Next, as shown in FIG. 4, a free layer underlayer 3a, a free layer 3b, a nonmagnetic layer 4, a fixed layer 5, a fixed layer 6b, and an upper layer 7 are formed on the lower conductive layer 1 and the longitudinal bias layer 2b. It forms and laminates in order.

  Next, as shown in FIG. 5, a photoresist 21 is formed so as to cover the central portion of the region where the vertical bias layer 2b is not disposed immediately below the upper surface of the upper layer 7, and the photoresist 21 is used as a mask to form a nonmagnetic material. The layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are etched by dry etching or the like, and the insulating layer 11 is formed so as to embed the etched portion. At this time, the upper surface of the upper layer 7 is exposed on the upper surface of the insulating layer 11.

  Next, as shown in FIG. 6, the photoresist 21 is removed, and the lower conductive layer 1, the vertical bias layer base layer 2a, the vertical bias layer 2b, the free layer base layer 3a, the free layer 3b, the nonmagnetic layer 4, and the fixed layer. A magnetoresistive effect element 31a composed of the layer 5, the fixed layer 6b, and the upper layer 7 is formed.

  Next, as shown in FIG. 7, an upper conductive layer 15 is formed on the upper layer 7 and the insulating layer 11, a photoresist (not shown) is formed, and the upper conductive layer 15 is dry-etched using this as a mask. After patterning by such as, this photoresist is removed, the upper shield layer 17 is formed thereon, and the magnetoresistive head 61a is formed.

  The configuration of the magnetoresistive head 61a according to this embodiment will be described. As shown in FIG. 7, a lower shield layer 16 and a lower conductive layer 1 are provided, the lower conductive layer 1 has a recess 1a, and a vertical bias layer base layer 2a and a vertical bias layer 2b are provided in the recess 1a. . A free layer underlayer 3a and a free layer 3b are provided on a portion of the lower conductive layer 1 where the vertical bias layer underlayer 2a and the vertical bias layer 2b are not provided and on the vertical bias layer 2b. On the free layer 3b, a nonmagnetic layer 4, a fixed layer 5, a fixed layer 6b, and an upper layer 7 that are patterned so as not to be disposed immediately above the vertical bias layer 2b are stacked in this order.

  The nonmagnetic layer 4, the fixed layer 5, the fixed layer 6 b, and the upper layer 7 are embedded in the insulating layer 11, and the upper surface of the upper layer 7 is exposed on the upper surface of the insulating layer 11. Further, an upper conductive layer 15 is provided on the upper layer 7 and the insulating layer 11, and an upper shield layer 17 is provided on the upper conductive layer 15.

  In the above structure, the lower conductive layer 1 and the upper conductive layer 15 are formed of a free layer underlayer 3a, a free layer 3b, a nonmagnetic layer 4 and a fixed layer disposed between the lower conductive layer 1 and the upper conductive layer 15. 5. A lower electrode and an upper electrode for allowing a sense current to flow in a direction perpendicular to the stacked surface with respect to the fixed layer 6b and the upper layer 7. The material constituting the lower conductive layer 1 and the upper conductive layer 15 is 1 selected from the group consisting of Au, Ag, Cu, Mo, W, Y, Ti, Zr, Hf, V, Nb, Pt, Ta, and the like. Examples include a single material of a seed material, a mixture of two or more materials, a compound of two or more materials, or a multilayer film composed of two or more materials. In particular, Au, Ag, Cu, Pt, and Ta are more promising candidates. Further, examples of the material constituting the substrate include artic, SiC, alumina, artic, alumina, SiC, and alumina.

  The longitudinal bias layer 2b is for applying a longitudinal bias magnetic field to the free layer 3b. The longitudinal bias layer underlayer 2a improves the film quality such as crystallinity of the longitudinal bias layer 2b, and the magnetic property of the longitudinal bias layer 2b. This is a base layer for improving the characteristics. The materials constituting the vertical bias layer base layer 2a include Ta, Hf, Zr, W, Cr, Ti, Mo, Pt, Ni, Ir, Cu, Ag, Co, Zn, Ru, Rh, Re, Au, and Os. , Pd, Nb, V, Fe, FeCo, FeCoNi, NiFe, etc., a single material selected from the group consisting of a single material, a mixture of two or more materials, or a multilayer film composed of two or more materials. It is done. In particular, Cr, Fe and CoFe are more promising candidates. The material constituting the vertical bias layer 2b includes CoCrPt, CoCr, CoPt, CoCrTa, FeMn, NiMn, Ni oxide, NiCo oxide, Fe oxide, NiFe oxide, IrMn, PtMn, PtPdMn, ReMn, CoMn. Examples thereof include a single film of one material selected from the group consisting of ferrite and Ba ferrite, a mixture of two or more materials, or a multilayer film composed of two or more materials. In particular, CoCrPt, CoCrTa, CoPt, NiMn, and IrMn are more promising candidates.

  The free layer 3b is a magnetic layer that changes the direction of magnetization according to the direction and magnitude of the magnetic field when an external magnetic field is applied to the magnetic sensor including the magnetoresistive head 61a. An external magnetic field is applied to the free layer 3b via the longitudinal bias layer 2b. The free underlayer 3a is an underlayer for improving the film quality such as crystallinity of the free layer 3b and improving the magnetic properties of the free layer 3b. As a material constituting the free layer base layer 3a, Ta, Hf, Zr, W, Cr, Ti, Mo, Pt, Ni, Ir, Cu, Ag, Co, Zn, Ru, Rh, Re, Au, Os, Examples thereof include a single film of one material selected from the group consisting of Pd, Nb and V, a mixture of two or more materials, a compound of two or more materials, or a multilayer film composed of two or more materials. In particular, Ta, Zr and Hf are more promising candidates. As a material constituting the free layer 3b, NiFe, CoFe, NiFeCo, FeCo, CoFeB, CoZrMo, CoZrNb, CoZr, CoZrTa, CoHf, CoTa, CoTaHf, CoNbHf, CoZrNb, CoHfPd, CoTaZrNb, and CoZrMoNi alloys or amorphous magnetic materials are used. Can be mentioned. As additive elements, a group consisting of Ta, Hf, Zr, W, Cr, Ti, Mo, Pt, Ni, Ir, Cu, Ag, Co, Zn, Ru, Rh, Re, Au, Os, Pd, Nb, and V One or more selected elements can also be used. NiFe, (NiFe / CoFe) bilayer film, (NiFe / NiFeCo) bilayer film and (NiFe / Co) bilayer film are more promising candidates.

  The pinned layer 6b is a layer for pinning the magnetization direction of the pinned layer 5, and the pinned layer underlayer 6a improves the film quality such as crystallinity of the pinned layer 6b and improves the magnetic properties of the pinned layer 6b. It is a base layer for making. The fixed layer 5 is a layer whose magnetization direction is fixed by the fixed layer 6b.

  The material constituting the fixed layer underlayer 6a includes Ta, Hf, Zr, W, Cr, Ti, Mo, Pt, Ni, Ir, Cu, Ag, Co, Zn, Ru, Rh, Re, Au, Os. , Pd, Nb and V selected from the group consisting of a single material, a mixture of two or more materials, a compound of two or more materials, or a multilayer film composed of two or more materials. . In particular, Ta, Zr and Hf are promising candidates. As the material constituting the immobilization layer 6b, FeMn, NiMn, IrMn, RhMn, PtPdMn, ReMn, PtMn, PtCrMn, CrMn, CrAl, TbCo, CoCr, CoCrPt, CoCrTa, PtCo, and the like can be used. In particular, PtMn or PtMn with Ti, V, Cr, Co, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, A material to which at least one element of Au, Si and Al is added is a promising candidate.

  As a material constituting the fixed layer 5, NiFe, Co, CoFe, NiFeCo, FeCo, CoFeB, CoZrMo, CoZrNb, CoZr, CoZrTa, CoTa, CoTaHf, CoNbHf, CoZrNb, CoHfPd, CoTaZrNb and CoZrMoNi alloys or amorphous magnetic materials are used. Can be used. These materials, Ti, V, Cr, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ra, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au It is also possible to use a laminated film in which at least one metal selected from the group consisting of Si, Al, and Ni or an alloy thereof is combined. In particular, (Co / Ru / Co), (CoFe / Ru / CoFe), (CoFeNi / Ru / CoFeNi), (Co / Cr / Co), (CoFe / Cr / CoFe) and (CoFeNi / Cr / CoFeNi) A three-layer film is a promising candidate.

  The nonmagnetic layer 4 is disposed between the free layer 3 b and the fixed layer 5, and the electric resistance value changes according to the angle formed by the magnetization direction of the free layer 3 b and the magnetization direction of the fixed layer 5. The material constituting the nonmagnetic layer 4 includes metal, oxide, nitride, a mixture of oxide and nitride, or a multilayer film of metal and oxide, a multilayer film of metal and nitride, metal and oxide, and A multilayer film with a mixture of nitrides is used. At this time, the metals are Ti, V, Cr, Co, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au. , Si, Al, Ti, Ta, Pt, Ni, Co, Re, and V are at least one metal selected from the group consisting of oxide, oxide is an oxide of these metals, and nitride is these It is a metal nitride. In particular, Al oxide and Cu are promising candidates.

  The upper layer 7 is a layer that prevents the layer disposed thereunder from being corroded during the manufacturing process of the magnetoresistive head 61a and in the use environment. The material constituting the upper layer 7 is a single substance selected from the group consisting of Au, Ag, Cu, Mo, W, Y, Ti, Pt, Zr, Hf, V, Nb, Ta, and Ru. Examples include a mixture of two or more materials, a compound of two or more materials, or a multilayer film composed of two or more materials. In particular, Ta, Zr and Ti are promising candidates.

  Furthermore, the insulating layer 11 is a layer that prevents the sense current flowing through the nonmagnetic layer 4 from leaking. Examples of the material constituting the insulating layer 11 include simple substances made of Al oxide, Si oxide, aluminum nitride, silicon nitride, or diamond-like carbon, a mixture thereof, and a multilayer film composed of these.

  Furthermore, the materials constituting the lower shield layer 16 and the upper shield layer 17 include NiFe, CoZr, CoFeB, CoZrMo, CoZrNb, CoZrTa, CoHf, CoTa, CoTaHf, CoNbHf, CoZrNb, CoHfPd, CoTaZrNb, CoZrMoNi, FeAlSi, and nitridation. Examples thereof include a single material selected from the group consisting of iron-based material, MnZn ferrite, NiZn ferrite, and MgZn ferrite, a mixture of two or more materials, or a multilayer film composed of two or more materials.

  Next, the operation of the magnetoresistive head 61a will be described. When a magnetic field is applied to the magnetoresistive head 61a from the outside, a magnetic field is applied to the free layer 3b via the longitudinal bias layer 2b, and the direction of magnetization of the free layer 3b according to the direction and magnitude of the applied magnetic field. Changes. At this time, since the magnetization direction of the fixed layer 5 is fixed by the fixed layer 6b, a change occurs between the magnetization direction of the fixed layer 5 and the magnetization direction of the free layer 3b, and the electric resistance value of the nonmagnetic layer 4 Changes. In this state, an external magnetic field can be detected by flowing a sense current in a direction perpendicular to the nonmagnetic layer 4 by the lower conductive layer 1 and the upper conductive layer 15 and measuring the electric resistance value of the nonmagnetic layer 4. it can.

  The effect of the present embodiment will be described. In the magnetoresistive head 61a of this example, as shown in FIG. 7, the length of the free layer 3b is longer than the length of the fixed layer 5, and only the free layer 3b is located in the vicinity of the longitudinal bias layer 2b. Has been placed. Thereby, the vertical bias layer 2b can reliably and effectively apply a magnetic field to the free layer 3b, and can prevent the sense current from leaking from the fixed layer 5 to the vertical bias layer 2b. Thereby, almost all of the applied sense current flows to the nonmagnetic layer 4, and the performance of the magnetoresistive head 61a is improved.

  In addition, since the patterned longitudinal bias layer foundation layer 2a and part of the longitudinal bias layer 2b in the film thickness direction are embedded in the recess 1a of the lower conductive layer 1, the longitudinal bias layer foundation layer 2a and the longitudinal bias layer The inclination at the end of the pattern 2b becomes gentle, and a longitudinal bias magnetic field can be applied more effectively from the longitudinal bias layer 2b to the free layer 3b.

  8 and 9 are partial cross-sectional views showing modifications of the magnetoresistive effect element according to this embodiment. FIG. 8 shows a magnetoresistive effect element 31b in which the free layer 3b is patterned and the end of the free layer 3b is in contact with the end of the longitudinal bias layer 2b.

  FIG. 9 shows a magnetoresistive effect element 31c in which the free layer 3b is patterned and the end of the free layer 3b overlaps the vertical bias layer 2b. A magnetoresistive head can also be configured by the magnetoresistive elements 31b and 31c shown in FIGS. 8 and 9 in the same manner as the magnetoresistive element 31a.

  In this embodiment, the nonmagnetic layer 4 is patterned with the fixed layer 5, the fixed layer 6b, and the upper layer 7. However, the nonmagnetic layer 4 spreads like the free layer 3b. Alternatively, it may be patterned so as to be larger than the pattern of the fixed layer 5, the fixed layer 6b, and the upper layer 7 and smaller than the pattern of the free layer 3b.

  Further, the vertical bias layer base layer 2a, the free layer base layer 3a, and the upper layer 7 may be omitted, and a protective layer for the vertical bias layer may be provided on the vertical bias layer 2b.

  Furthermore, in the present embodiment, an example in which the lower shield layer 16 and the lower conductive layer 1 are provided separately has been shown, but the lower shield layer 16 and the lower conductive layer 1 may be a common layer. In this case, the lower conductive layer 1 is omitted. Further, the upper shield 17 and the upper conductive layer 15 may be a common layer. In this case, the upper conductive layer 15 is omitted. Thereby, the gap between the upper and lower shield layers can be reduced. Furthermore, an upper gap layer may be provided between the upper conductive layer 15 and the upper shield layer 17, and a lower gap layer may be provided between the lower shield layer 16 and the lower conductive layer 1.

  Next, a second embodiment of the present invention will be described. 10 to 18 are partial cross-sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, as shown in FIG. 10, a lower shield layer 16 and a lower conductive layer 1 are sequentially formed on a substrate (not shown).

  Next, as shown in FIG. 11, a photoresist 20 having an opening 20 a is formed on the lower conductive layer 1, the lower conductive layer 1 is etched by means such as dry etching, and a recess is formed on the surface of the lower conductive layer 1. 1a is formed.

  Next, as shown in FIG. 12, after removing the photoresist 20, a vertical bias layer base layer 2 a and a vertical bias layer 2 b are formed on the lower conductive layer 1.

  Next, as shown in FIG. 13, the photoresist 21 is formed so as to cover the region where the concave portion 1a is disposed immediately below the vertical bias layer 2b and to have the opening 21a in the region where the concave portion 1a is not disposed immediately below. Form. Next, the vertical bias layer underlayer 2a and the vertical bias layer 2b are etched by means such as dry etching using the photoresist 21 as a mask, and these are patterned.

  Next, as shown in FIG. 14, the free layer underlayer 3a, the free layer 3b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are formed on the lower conductive layer 1 and the longitudinal bias layer 2b. It forms and laminates in order.

  Next, as shown in FIG. 15, a photoresist 22 is provided so as to cover a region on the upper layer 7 where the vertical bias layer 2b is not disposed, and the photoresist 22 is used as a mask by means such as dry etching. The free layer underlayer 3a, the free layer 3b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are patterned.

  Next, as shown in FIG. 16, the photoresist 22 is removed, a photoresist 23 is formed on the upper layer 7 so as to cover the central portion of the upper layer 7, and dry etching or the like is performed using the photoresist 23 as a mask. The nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are patterned by means.

  Next, as shown in FIG. 17, the periphery of the pattern of the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 is filled with the insulating layer 11 to form the magnetoresistive effect element 32a.

  Next, as shown in FIG. 18, after removing the photoresist 23, an upper conductive layer 15 is formed on the upper layer 7 and the insulating layer 11, and a photoresist (not shown) is formed. Then, the upper conductive layer 15 is patterned by means such as dry etching using the mask as a mask, the photoresist is removed, the upper shield layer 17 is formed thereon, and the magnetoresistive head 62a is formed.

  The configuration of the magnetoresistive head 62a according to this embodiment will be described. As shown in FIG. 18, the magnetoresistive head 62a of this embodiment has a shape of the free layer underlayer 3a and the free layer 3b as compared with the magnetoresistive head 61a of the first embodiment shown in FIG. Is different. In this embodiment, the end portions of the free layer underlayer 3a and the free layer 3b are at the same height as the ends of the vertical bias layer underlayer 2a and the vertical bias layer 2b and are in contact with each other. In the magnetoresistive head 62a in the present embodiment, the configuration and operation other than the shapes of the free layer underlayer 3a and the free layer 3b are the same as those in the magnetoresistive head 61a in the first embodiment.

  In the present embodiment, the nonmagnetic layer 4 is patterned with the fixed layer 5, the fixed layer 6b and the upper layer 7. However, as in the first embodiment, the nonmagnetic layer 4 is It may be spread like the free layer 3b, or may be patterned so as to be larger than the pattern of the fixed layer 5, the fixed layer 6b and the upper layer 7 and smaller than the pattern of the free layer 3b. .

  In the present embodiment, the upper conductive layer 15 is patterned, but the upper conductive layer 15 may be spread without being patterned.

  Next, a third embodiment of the present invention will be described. 19 to 25 are partial cross-sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, as shown in FIG. 19, the lower shield layer 16 and the lower conductive layer 1 are sequentially formed on a substrate (not shown).

  Next, as shown in FIG. 20, a photoresist 20 having an opening 20 a is formed on the lower conductive layer 1, the lower conductive layer 1 is etched by means such as dry etching, and a recess is formed on the surface of the lower conductive layer 1. 1a is formed.

  Next, as shown in FIG. 21, using the photoresist 20 as a mask, the vertical bias layer base layer 2 a and the vertical bias layer 2 b are formed so as to be partially embedded in the recess 1 a of the lower conductive layer 1. Remove.

  Next, as shown in FIG. 22, a free layer underlayer 3a, a free layer 3b, a nonmagnetic layer 4, a fixed layer 5, a fixed layer 6b, and an upper layer 7 are formed on the lower conductive layer 1 and the longitudinal bias layer 2b. It forms and laminates in order.

  Next, as shown in FIG. 23, a photoresist 21 is provided so as to cover the central portion of the region where the vertical bias layer 2b is not disposed immediately below the upper surface of the upper layer 7, and dry etching is performed using the photoresist 21 as a mask. The nonmagnetic layer 4, the fixed layer 5, the fixed layer 6 b, and the upper layer 7 are patterned by the above means, and the periphery of the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6 b, and the upper layer 7 is embedded with the insulating layer 11. .

  Next, as shown in FIG. 24, the photoresist 21 is removed and patterned so as to cover a region wider than the photoresist 21 at the position where the photoresist 21 was provided on the upper layer 7 and the insulating layer 11. The photoresist 22 is formed, and the free layer base layer 3a, the free layer 3b, and the insulating layer 11 are etched and patterned by means such as dry etching using the photoresist 22 as a mask. Next, the etched region is filled with the insulating layer 11b to form the magnetoresistive element 32b.

  Next, as shown in FIG. 25, after removing the photoresist 22, the upper conductive layer 15 is formed on the upper layer 7, the insulating layer 11 and the insulating layer 11b, and a photoresist (not shown) is formed. Then, after patterning the upper conductive layer 15 with this photoresist by means such as dry etching, the photoresist is removed, and the upper shield layer 17 is formed thereon to form the magnetoresistive head 62b.

  The magnetoresistive head 62b formed in this embodiment has the same configuration and operation as the magnetoresistive head 62a in the second embodiment, except that the insulating layers 11 and 11b are formed by two steps. It is.

  Next, a magnetoresistive head according to a fourth embodiment of the present invention and a method for manufacturing the same will be described. 26 to 28 are partial sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, a laminate as shown in FIG. 3 is formed by the steps shown in FIGS. 1 to 3 in the first embodiment.

  Next, as shown in FIG. 26, the magnetic underlayer 8a, the magnetic layer 8b, the second nonmagnetic layer 9, the free layer 3b, and the first nonmagnetic layer 4 are formed on the lower conductive layer 1 and the longitudinal bias layer 2b. The fixing layer 5, the fixing layer 6b, and the upper layer 7 are formed and laminated in this order.

  Next, as shown in FIG. 27, a photoresist 21 is formed so as to cover a part of the region where the vertical bias layer 2b is not disposed immediately below the upper surface of the upper layer 7, and the second nonmagnetic layer 9, The free layer 3b, the first nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are etched by dry etching or the like, and an insulating layer 11 is formed so as to fill the etched portion, and the lower shield layer A magnetoresistive effect element 33 a is formed on 16.

  Next, as shown in FIG. 28, the photoresist 21 is removed, an upper conductive layer 15 is formed on the upper layer 7 and the insulating layer 11, a photoresist (not shown) is formed, and the upper conductive layer 15 is formed. After this is patterned by dry etching or the like, this photoresist is removed, an upper shield layer 17 is formed thereon, and a magnetoresistive head 63a is formed.

  The configuration of the magnetoresistive head 63a according to this embodiment will be described. As shown in FIG. 28, the magnetoresistive head 63a is characterized in that a magnetic layer 8b is provided below the free layer 3b via a nonmagnetic layer 9.

  As shown in FIG. 28, a lower shield layer 16 and a lower conductive layer 1 are provided on a base (not shown), the lower conductive layer 1 has a recess 1a, and a vertical bias layer underlayer 2a and a vertical bias layer are formed in the recess 1a. A bias layer 2b is provided. A magnetic layer base layer 8a and a magnetic layer 8b are provided on a portion of the lower conductive layer 1 where the vertical bias layer base layer 2a and the vertical bias layer 2b are not provided and on the vertical bias layer 2b. On the magnetic layer 8b, a second nonmagnetic layer 9, a free layer 3b, a first nonmagnetic layer 4, a fixed layer 5, and a fixed layer 6b patterned so as not to be disposed immediately above the longitudinal bias layer 2b. And the upper layer 7 is laminated | stacked in this order.

  The second nonmagnetic layer 9, the free layer 3b, the first nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are embedded in the insulating layer 11, and the upper surface of the upper layer 7 is It is exposed on the upper surface of the insulating layer 11. Further, a patterned upper conductive layer 15 is provided on the upper layer 7 and the insulating layer 11, and an upper shield layer 17 is provided on the upper conductive layer 15.

  In the above structure, the magnetic layer 8b applies the longitudinal bias magnetic field applied by the longitudinal bias layer 2b to the free layer 3b by magnetic coupling such as ferromagnetic coupling, antiferromagnetic coupling, or magnetostatic coupling. It is meant to convey. The second nonmagnetic layer 9 is for controlling the magnetic coupling between the magnetic layer 8b and the free layer 3b according to its constituent material and film thickness. The magnetic underlayer 8a is an underlayer for improving the film quality such as crystallinity of the magnetic layer 8b and improving the magnetic properties of the magnetic layer 8b. The first nonmagnetic layer 4 is an insulating layer for allowing a tunnel current to flow. The second nonmagnetic layer 9 controls the magnetic coupling between the magnetic layer 8b and the free layer 3b. This is a conductive layer.

  The magnetic layer 8b may be made of an alloy such as NiFe, Co, CoFe, NiFeCo, FeCo, CoFeB, CoZrMo, CoZrNb, CoZr, CoZrTa, CoHf, CoTa, CoTaHf, CoNbHf, CoZrNb, CoHfPd, CoHzPrNb, CoZrMoNi, or an amorphous alloy. A single layer film, a mixture film or a multilayer film made of a magnetic material is used. In particular, NiFe, Co, CoFe, NiFeCo or FeCo are promising candidates. Further, as additive elements, Ta, Hf, Zr, W, Cr, Ti, Mo, Pt, Ni, Ir, Cu, Ag, Co, Zn, Ru, Rh, Re, Au, Os, Pd, Nb, and V One or more elements selected from the group can also be used.

  The material constituting the second nonmagnetic layer 9 includes Ti, V, Cr, Co, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, A single substance selected from the group consisting of Re, Os, Ir, Pt, Au, Si, Al, Ti, Ta, Pt, Ni, Co, Re, and V, a mixture of two or more kinds of materials, A multilayer film composed of a compound of two or more materials or two or more materials is used. In particular, Ru and Cr are promising candidates.

  As the material constituting the magnetic layer underlayer 8a, Ta, Hf, Zr, W, Cr, Ti, Mo, Pt, Ni, Ir, Cu, Ag, Co, Zn, Ru, Rh, Re, Au, Os, Examples thereof include a single film of one material selected from the group consisting of Pd, Nb and V, a mixture of two or more materials, a compound of two or more materials, or a multilayer film composed of two or more materials. In particular, Ta and Zr are more promising candidates.

  The constituent materials and functions of the other layers in the magnetoresistive head 63a according to the present embodiment are the same as the constituent materials and functions of the respective layers in the magnetoresistive head 61a according to the first embodiment.

  Next, the operation of the magnetoresistive head 63a will be described. When a magnetic field is applied to the magnetoresistive head 63a from the outside, a magnetic field is applied to the magnetic layer 8b via the longitudinal bias layer 2b. Next, the longitudinal bias magnetic field is transferred from the magnetic layer 8b through the second nonmagnetic layer 9 to the free layer 3b by magnetic coupling such as ferromagnetic coupling, antiferromagnetic coupling, or magnetostatic coupling. To be applied. At this time, the magnetization direction of the free layer 3b changes according to the direction and magnitude of the magnetic field. Since the magnetization direction of the fixed layer 5 is fixed by the fixed layer 6b, a change occurs between the magnetization direction of the fixed layer 5 and the magnetization direction of the free layer 3b, and the electric resistance value of the nonmagnetic layer 4 changes. . In this state, an external magnetic field can be detected by flowing a sense current in a direction perpendicular to the nonmagnetic layer 4 by the lower conductive layer 1 and the upper conductive layer 15 and measuring the electric resistance value of the nonmagnetic layer 4. it can.

  The effect of the present embodiment will be described. In the magnetoresistive head 63a according to the present embodiment, since the longitudinal bias magnetic field is applied from the longitudinal bias layer 2b to the free layer 3b through a two-step process, the longitudinal bias magnetic field is reliably applied and the amount of applied magnetic field is increased. It becomes easy to control. As shown in FIG. 28, the free layer 3b and the fixed layer 5 are not disposed in the vicinity of the longitudinal bias layer 2b, and only the magnetic layer 8b is disposed in the vicinity of the longitudinal bias layer 2b. Thus, the vertical bias layer 2b can reliably and effectively apply a magnetic field to the magnetic layer 8b, and can prevent the sense current from leaking from the free layer 3b or the fixed layer 5 to the vertical bias layer 2b.

  29 and 30 are partial cross-sectional views showing modifications of the magnetoresistive effect element in this example. FIG. 29 shows a magnetoresistive effect element 33b in which the magnetic layer 8b is patterned and the end of the magnetic layer 8b is in contact with the end of the longitudinal bias layer 2b.

  FIG. 30 shows a magnetoresistive effect element 33c in which the magnetic layer 8b is patterned and the end of the magnetic layer 8b overlaps the vertical bias layer 2b. A magnetoresistive head can also be configured by the magnetoresistive elements 33b and 33c shown in FIGS.

  In this embodiment, the second nonmagnetic layer 9, the free layer 3b, and the nonmagnetic layer 4 are patterned together with the fixed layer 5, the fixed layer 6b, and the upper layer 7. The nonmagnetic layer 9, the free layer 3b, and the nonmagnetic layer 4 may extend like the magnetic layer 8b, and are larger than the pattern of the fixed layer 5, the fixed layer 6b, and the upper layer 7 and are magnetic layers. It may be patterned so as to be smaller than the pattern of 8b. Further, the pattern of the second nonmagnetic layer 9 may be wider than the pattern of the free layer 3 b, and the pattern of the free layer 3 b may be wider than the nonmagnetic layer 4.

  Further, the longitudinal bias layer underlayer 2a, the magnetic layer underlayer 8a, the second nonmagnetic layer 9 and the upper layer 7 may be omitted, and a protective layer for the longitudinal bias layer may be provided on the longitudinal bias layer 2a. it can.

  Furthermore, in this embodiment, an example in which the lower shield layer 16 and the lower conductive layer 1 are provided separately has been shown. However, as in the first to third embodiments, the lower shield layer 16 and the lower conductive layer 1 are provided. May be a common layer. In this case, the lower conductive layer 1 is omitted. Further, the upper shield 17 and the upper conductive layer 15 may be a common layer. In this case, the upper conductive layer 15 is omitted. Thereby, the gap between the upper and lower shield layers can be reduced. Further, an upper gap insulating layer may be provided between the upper conductive layer 15 and the upper shield layer 17, and a lower gap insulating layer may be provided between the lower shield layer 16 and the lower conductive layer 1.

  Next, a fifth embodiment of the present invention will be described. 31 to 34 are partial cross-sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, a laminated body as shown in FIG. 13 is formed by the steps shown in FIGS. 10 to 13 in the second embodiment.

  Next, as shown in FIG. 31, the photoresist 21 is removed, and the magnetic layer underlayer 8a, the magnetic layer 8b, the second nonmagnetic layer 9, and the free bias are formed on the exposed portion of the lower conductive layer 1 and the vertical bias layer 2b. The layer 3b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are formed and laminated in this order.

  Next, as shown in FIG. 32, a photoresist 22 is provided so as to cover a region where the vertical bias layer 2b is not disposed immediately below the upper surface of the upper layer 7, and dry etching or the like is performed using the photoresist 22 as a mask. Thus, the magnetic underlayer 8a, the magnetic layer 8b, the second nonmagnetic layer 9, the free layer 3b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are patterned.

  Next, as shown in FIG. 33, the photoresist 22 is removed, a photoresist 23 is formed on the upper layer 7 so as to cover the center of the upper layer 7, and dry etching or the like is performed using the photoresist 23 as a mask. The second nonmagnetic layer 9, the free layer 3b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are patterned by the means, and the second nonmagnetic layer 9, the free layer 3b, the nonmagnetic layer are patterned. 4. The periphery of the pattern of the fixed layer 5, the fixed layer 6b, and the upper layer 7 is filled with the insulating layer 11, and the magnetoresistive effect element 34a is formed on the lower conductive layer 16.

  Next, as shown in FIG. 34, after removing the photoresist 23, an upper conductive layer 15 is formed on the upper layer 7 and the insulating layer 11, a photoresist (not shown) is formed, dry etching, etc. After the upper conductive layer 15 is patterned by the above means, the photoresist is removed, the upper shield layer 17 is formed thereon, and the magnetoresistive head 64a is formed.

  The configuration of the magnetoresistive head 64a in this embodiment will be described. As shown in FIG. 34, the magnetoresistive head 64a of this embodiment has a shape of the magnetic layer underlayer 8a and the magnetic layer 8b as compared with the magnetoresistive head 63a of the fourth embodiment shown in FIG. Is different. In this embodiment, the magnetic underlayer 8a and the magnetic layer 8b are patterned, and their ends are at the same height as the ends of the vertical bias underlayer 2a and the vertical bias layer 2b, and are in contact with each other. Yes. In the magnetoresistive head 64a in this embodiment, the configuration operation and effects other than the shapes of the magnetic underlayer 8a and the magnetic layer 8b are the same as those in the magnetoresistive head 63a in the fourth embodiment.

  In the present embodiment, the nonmagnetic layer 4 is patterned together with the fixed layer 5, the fixed layer 6b, and the upper layer 7, but the nonmagnetic layer 4 is similar to the fourth embodiment. May be spread like the free layer 3b, or may be patterned to be larger than the pattern of the fixed layer 5, the fixed layer 6b and the upper layer 7 and smaller than the pattern of the free layer 3b. Good. The pattern of the second nonmagnetic layer 9 may be wider than the pattern of the magnetic layer 8 b, and the pattern of the magnetic layer 8 b may be wider than the nonmagnetic layer 4.

  In the present embodiment, the upper conductive layer 15 is patterned, but the upper conductive layer 15 may be spread without being patterned.

  Next, a sixth embodiment of the present invention will be described. 35 to 39 are partial cross-sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, a laminated body as shown in FIG. 2 is formed by the steps shown in FIGS. 1 and 2 in the first embodiment.

  Next, as shown in FIG. 35, the photoresist 20 is removed, and on the lower conductive layer 1, the magnetic underlayer 8a, the magnetic layer 8b, the second nonmagnetic layer 9, the free layer 3b, the nonmagnetic layer 4, The fixed layer 5, the fixed layer 6b, and the upper layer 7 are formed and laminated in this order.

  Next, as shown in FIG. 36, a photoresist 21 is provided so as to cover a central portion of a region where the concave portion 1a of the lower conductive layer 1 is not disposed immediately below the upper surface of the upper layer 7, and the photoresist 21 is used as a mask. The second nonmagnetic layer 9, the free layer 3b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are patterned by means such as dry etching, and the second nonmagnetic layer 9, the free layer 3 b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6 b, and the upper layer 7 are filled with an insulating layer 11 around the pattern.

  Next, as shown in FIG. 37, the photoresist 21 is removed, and a photoresist 22 is formed so as to cover a region where the recess 1 a is not disposed immediately below the upper surfaces of the upper layer 7 and the insulating layer 11. At this time, the region covered with the photoresist 21 is included in the region covered with the photoresist 22.

  Next, as shown in FIG. 38, using the photoresist 22 as a mask, the insulating layer 11, the magnetic layer underlayer 8a, and the magnetic layer 8b are etched and patterned, and then the vertical bias underlayer 2a and the vertical bias layer 2b are formed. The second insulating layer 11b is formed on the longitudinal bias layer 2b, and the magnetoresistive element 34b is formed on the lower conductive layer 16.

  Next, as shown in FIG. 39, after removing the photoresist 22, the upper conductive layer 15 is formed on the upper layer 7, the insulating layer 11 and the insulating layer 11b, and a photoresist (not shown) is formed. After patterning the upper conductive layer 15 by means such as dry etching, the photoresist is removed, the upper shield layer 17 is formed thereon, and the magnetoresistive head 64b is formed.

  The magnetoresistive head 64b formed in this embodiment has the same configuration and operation as the magnetoresistive head 64a in the fifth embodiment, except that the insulating layers 11 and 11b are formed by two steps. It is.

  Next, a seventh embodiment of the present invention will be described. 40 to 46 are partial cross-sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, as shown in FIG. 40, a lower shield layer 16 and a lower conductive layer 1 are sequentially formed on a substrate (not shown).

  Next, as shown in FIG. 41, the fixed layer base layer 6a, the fixed layer 6b, the fixed layer 5, the first nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 are formed in this order. Laminate.

  Next, as shown in FIG. 42, a patterned photoresist 20 is formed on the second nonmagnetic layer 9, and the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, and the first non-magnetic layer 9 are formed. The magnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 are patterned by means such as dry etching, and the patterned fixed layer underlayer 6a, fixed layer 6b, fixed layer 5, and first nonmagnetic layer are patterned. A pattern 29a composed of the layer 4, the free layer 3b, and the second nonmagnetic layer 9 is formed.

  Next, as shown in FIG. 43, the insulating layer 11 is formed so as to fill the pattern 29a. At this time, the height of the insulating layer 11 is made equal to the height of the pattern 29a in the vicinity of the pattern 29a, slightly lower than the height of the pattern 29a at a certain distance from the pattern 29a, and the space between them is smooth. Connect with a gentle slope.

  Next, as shown in FIG. 44, the vertical bias layer base layer 2 a and the vertical bias layer 2 b are formed on the insulating layer 11. At this time, the thickness of the longitudinal bias layer 2b is changed along the inclination of the insulating layer 11, and the thickness of the longitudinal bias layer 2b is increased at a certain distance from the pattern 29a. Try to be thin.

  Next, as shown in FIG. 45, the photoresist 20 is removed, the magnetic layer 8b and the upper layer 7 are formed on the longitudinal bias layer 2b, and the magnetoresistive element 35a is formed.

  Next, as shown in FIG. 46, after the upper conductive layer 15 is formed on the upper layer 7, a photoresist (not shown) is formed, and the upper conductive layer 15 is patterned by means such as dry etching. The photoresist is removed, the upper shield layer 17 is formed thereon, and the magnetoresistive head 65a is formed.

  Next, the configuration of the magnetoresistive head 65a according to the present embodiment will be described. As shown in FIG. 46, the lower shield layer 16 is provided, and the lower conductive layer 1 is provided on the lower shield layer 16. On the lower conductive layer 1, a patterned fixed layer underlayer 6 a, a fixed layer 6 b, a fixed layer 5, a first nonmagnetic layer 4, a free layer 3 b, and a pattern 29 a composed of a second nonmagnetic layer 9 are formed. Is formed. The insulating layer 11 is disposed around the pattern 29, and the pattern 29 a is embedded with the insulating layer 11.

  In the vicinity of the pattern 29a, the upper surface of the insulating layer 11 is equal to the upper surface of the pattern 29a, and the upper surface of the insulating layer 11 is slightly lower than the upper surface of the pattern 29a at a certain distance from the pattern 29a. The gap is smooth. The vertical bias layer 2b is provided on the insulating layer 11 so that at least a part of the film thickness direction is embedded in the insulating layer 11 along the shape of the upper surface of the insulating layer 11, and the thickness of the vertical bias layer 2b. The thickness is thicker at a position away from the pattern 29a by a certain distance, and is thinner toward the pattern 29a. A magnetic layer 8b and an upper layer 7 are provided on the vertical bias layer 2b and the pattern 29a.

  A patterned upper conductive layer 15 is provided on the upper layer 7, and an upper shield layer 17 is provided thereon.

  Next, the operation of the magnetoresistive head 65a according to this embodiment will be described. When a magnetic field is applied to the magnetoresistive head 65a from the outside, a magnetic field is applied to the magnetic layer 8b via the longitudinal bias layer 2b. Next, the longitudinal bias magnetic field is transferred from the magnetic layer 8b through the second nonmagnetic layer 9 to the free layer 3b by magnetic coupling such as ferromagnetic coupling, antiferromagnetic coupling, or magnetostatic coupling. To be applied. At this time, the magnetization direction of the free layer 3b changes according to the direction and magnitude of the magnetic field. Since the magnetization direction of the fixed layer 5 is fixed by the fixed layer 6b, a change occurs between the magnetization direction of the fixed layer 5 and the magnetization direction of the free layer 3b, and the electric resistance value of the nonmagnetic layer 4 changes. . In this state, an external magnetic field can be detected by flowing a sense current in a direction perpendicular to the nonmagnetic layer 4 by the lower conductive layer 1 and the upper conductive layer 15 and measuring the electric resistance value of the nonmagnetic layer 4. it can.

  The effect of the present embodiment will be described. In the magnetoresistive head 65a according to the present embodiment, since the longitudinal bias magnetic field is applied from the longitudinal bias layer 2b to the free layer 3b through a two-step process, the longitudinal bias magnetic field is reliably applied and the amount of applied magnetic field It becomes easy to control.

  In this embodiment, the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, the first nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 are all similarly patterned. However, it is sufficient that the patterning is performed at least in the free layer 3b, and the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, and the first nonmagnetic layer 4 are patterned. It does not have to be. Further, the pattern of the fixing layer base layer 6a may be larger than the pattern of the fixing layer 6b, the pattern of the fixing layer 6b may be larger than the pattern of the fixing layer 5, and the pattern of the fixing layer 5 is the first pattern. The pattern of the nonmagnetic layer 4 may be larger, and the pattern of the first nonmagnetic layer 4 may be larger than the pattern of the free layer 3b. In this embodiment, the upper surface of the insulating layer 11 is lower than the upper surface of the pattern of the free layer 3b. However, the upper surface of the insulating layer 11 may be the same height as the upper surface of the pattern of the free layer 3b. It may be higher than the upper surface of the pattern of the free layer 3b.

  47 to 54 are partial cross-sectional views showing a configuration of a magnetoresistive effect element according to a modification of the present embodiment. In the magnetoresistive effect element 35b shown in FIG. 47, as compared with the magnetoresistive effect element 35a shown in FIG. 46, the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, and the first nonmagnetic layer 4 are provided. The difference is that it is not patterned. A patterned free layer 3 b and a second nonmagnetic layer 9 are provided on the first nonmagnetic layer 4, and these patterns are embedded with an insulating layer 11. The structure other than the shapes of the fixed layer underlayer 6a, fixed layer 6b, fixed layer 5, and first nonmagnetic layer 4 is the same as the structure of the magnetoresistive element 35a. The operation of the magnetoresistive effect element 35b is the same as that of the magnetoresistive effect element 35a.

  The magnetoresistive effect element 35b has an advantage that the etching process of the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, and the first nonmagnetic layer 4 at the time of manufacture can be omitted compared to the magnetoresistive effect element 35a. There is.

  In the present modification, the example in which the free layer 3b and the second nonmagnetic layer 9 are patterned is shown. However, it is sufficient that the patterning is performed on at least the free layer 3b. In the laminated body composed of the fixed layer 6b, the fixed layer 5, and the first nonmagnetic layer 4, it is possible to appropriately select how far the pattern is to be patterned.

  A magnetoresistive effect element 35c shown in FIG. 48 is an example in which the first nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 are patterned.

  Further, the magnetoresistive effect element 35c shown in FIG. 49 is an example in which the fixed layer 5, the first nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 are patterned.

  Furthermore, in the magnetoresistive effect element 35e shown in FIG. 50, the pattern of the longitudinal bias layer 2b is placed away from the pattern 29b composed of the first nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9. This is an example. This can more reliably prevent the sense current from leaking to the vertical bias layer 2b. Other configurations and operations of the magnetoresistive effect element 35e are the same as those of the magnetoresistive effect element 35c shown in FIG.

  In the present modification, the example in which the free layer 3b and the second nonmagnetic layer 9 are patterned is shown. However, it is sufficient that the patterning is performed on at least the free layer 3b. In the laminated body composed of the fixed layer 6b, the fixed layer 5, and the first nonmagnetic layer 4, it is possible to appropriately select how far the pattern is to be patterned.

  In the present modification, the upper surface of the insulating layer 11 is higher than the upper surface of the pattern of the free layer 3b. However, the upper surface of the insulating layer 11 is as high as the upper surface of the pattern of the free layer 3b. It may be lower than the upper surface of the pattern of the free layer 3b.

  Further, in the present modification, an example in which the magnetic layer 8b is not patterned is shown, but at least a part of the magnetic layer 8b is at least partially applied to the magnetic layer 8b from the longitudinal bias layer 2b. It only needs to be located in the vicinity of the longitudinal bias layer 2b.

  The magnetoresistive effect element 35f shown in FIG. 51 is an example in which the end portion of the pattern of the magnetic layer 8b rides on the longitudinal bias layer 2b.

  The magnetoresistive element 35g shown in FIG. 52 is an example in which the end of the pattern of the magnetic layer 8b is in contact with the end of the pattern of the longitudinal bias layer 2b.

  In the present modification, the example in which the free layer 3b and the second nonmagnetic layer 9 are patterned in the same manner is shown. However, as in the magnetoresistive effect element 35h shown in FIG. The layer 9 may extend on the longitudinal bias layer 2b.

  Further, like the magnetoresistive effect element 35 i shown in FIG. 54, the second nonmagnetic layer 9 may be spread on the insulating layer 11.

  The magnetoresistive effect elements 35b, 35c, 35d, 35e, 35f, 35g, 35h, and 35i shown in FIGS. 47 to 54 can be used for the magnetoresistive effect head in the same manner as the magnetoresistive effect element 35a.

  Also in this embodiment, the lower shield layer 16 and the lower conductive layer 1 may be the same layer, and the upper shield layer 17 and the upper conductive layer 15 may be the same layer. Further, an upper gap layer may be provided between the upper conductive layer 15 and the upper shield layer 17, and a lower gap layer may be provided between the lower shield layer 16 and the lower conductive layer 1.

  Further, the longitudinal bias layer underlayer 2a, the fixed layer underlayer 6a, the second nonmagnetic layer 9 and the upper layer 7 may be omitted, or a protective layer for the longitudinal bias layer may be provided on the longitudinal bias layer 2b. Good.

  Next, an eighth embodiment of the present invention will be described. 55 to 61 are partial cross-sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, as shown in FIG. 55, a lower shield layer 16 and a lower conductive layer 1 are sequentially formed on a substrate (not shown).

  Next, as shown in FIG. 56, a fixed layer underlayer 6a, a fixed layer 6b, a fixed layer 5, a first nonmagnetic layer 4, a free layer 3b, and a second nonmagnetic layer are formed in this order and stacked. To do.

  Next, as shown in FIG. 57, a photoresist 20 having an opening 20a is formed on the second nonmagnetic layer 9, and the fixing layer underlayer 6a, the fixing layer 6b, the fixing layer 5, and the first layer The nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 are patterned by means such as dry etching, and the patterned fixed layer underlayer 6a, fixed layer 6b, fixed layer 5, and first non-layer are patterned. A pattern 29c composed of the magnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 is formed.

  Next, as shown in FIG. 58, the insulating layer 11 is formed so as to fill the pattern 29c.

  Next, as shown in FIG. 59, the first magnetic layer 8, the third nonmagnetic layer 13, the second magnetic layer 12, and the longitudinal bias layer 2b are formed on the pattern 29c and the insulating layer 11.

  Next, as shown in FIG. 60, a photoresist 21 having an opening 21a is formed immediately above the patterned second nonmagnetic layer 9, and the vertical bias layer 2b is patterned using the photoresist 21 as a mask. A magnetoresistive element 36a is formed.

  Next, as shown in FIG. 61, the photoresist 21 is removed, and the upper conductive layer 15 is formed on the exposed portion of the second magnetic layer 12 and the pattern of the vertical bias layer 2b, and a photoresist (not shown) is formed. Then, after patterning by means such as dry etching, the photoresist is removed, the upper shield layer 17 is formed thereon, and the magnetoresistive head 66a is formed.

  Next, the configuration of the magnetoresistive head 66a according to this embodiment will be described. As shown in FIG. 61, in the magnetoresistive head 66a, the lower shield layer 16 is provided, and the lower conductive layer 1 is provided on the lower shield layer 16. On the lower conductive layer 1, a pattern 29c comprising a patterned fixed layer underlayer 6a, fixed layer 6b, fixed layer 5, first nonmagnetic layer 4, free layer 3b, and second nonmagnetic layer 9 is formed. Is formed. The insulating layer 11 is disposed around the pattern 29c, and the pattern 29c is embedded with the insulating layer 11.

  A first magnetic layer 8, a third nonmagnetic layer 13, and a second magnetic layer 12 are provided on the pattern 29c and the insulating layer 11, and the second magnetic layer 12 is directly above the pattern 29c. A longitudinal bias layer 2b is provided so as not to be disposed.

  The third nonmagnetic layer 13 is for controlling the magnetic coupling between the second magnetic layer 12 and the magnetic layer 8 according to its constituent material and film thickness. The material constituting the third nonmagnetic layer 13 includes Ti, V, Cr, Co, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, A simple substance of one material selected from the group consisting of Re, Os, Ir, Pt, Au, Si, Al, Ta, Pt and Ni, a mixture of two or more materials, a compound of two or more materials, or 2 A multilayer film composed of more than one kind of material is used. In particular, Ru and Cr are promising candidates.

  The materials constituting the second magnetic layer 12 include NiFe, Co, CoFe, NiFeCo, FeCo, CoFeB, CoZrMo, CoZrNb, CoZr, CoZrTa, CoHf, CoTa, CoTaHf, CoNbHf, CoZrNb, CoHfPd, CoTaZrNb, CoZrMoNi. A multilayer film composed of a single substance selected from the group consisting of alloys such as alloys or amorphous magnetic materials, a mixture of two or more kinds of materials, or two or more kinds of materials is used. In particular, NiFe, Co, CoFe, NiFeCo or FeCo are promising candidates. Further, as additive elements, Ta, Hf, Zr, W, Cr, Ti, Mo, Pt, Ni, Ir, Cu, Ag, Co, Zn, Ru, Rh, Re, Au, Os, Pd, Nb, and V One or more elements selected from the group can also be used.

  Next, the operation of the magnetoresistive head 66a according to this embodiment will be described. When a magnetic field is applied to the magnetoresistive head 66a from the outside, a magnetic field is applied to the second magnetic layer 12 via the longitudinal bias layer 2b. Next, a longitudinal bias magnetic field is applied from the second magnetic layer 12 through the third nonmagnetic layer 13 by magnetic coupling such as ferromagnetic coupling, antiferromagnetic coupling, or magnetostatic coupling. Applied to the magnetic layer 8b. Further, the longitudinal bias magnetic field is applied to the free layer 3b from the magnetic layer 8 through the second nonmagnetic layer 9 by magnetic coupling such as ferromagnetic coupling, antiferromagnetic coupling, or magnetostatic coupling. Is done.

  At this time, the magnetization direction of the free layer 3b changes according to the direction and magnitude of the magnetic field. Since the magnetization direction of the fixed layer 5 is fixed by the fixed layer 6b, a change occurs between the magnetization direction of the fixed layer 5 and the magnetization direction of the free layer 3b, and the electric resistance value of the nonmagnetic layer 4 changes. . In this state, an external magnetic field can be detected by flowing a sense current in a direction perpendicular to the nonmagnetic layer 4 by the lower conductive layer 1 and the upper conductive layer 15 and measuring the electric resistance value of the nonmagnetic layer 4. it can.

  The effect of the present embodiment will be described. In the magnetoresistive head 65a according to the present embodiment, since the longitudinal bias magnetic field is applied from the longitudinal bias layer 2b to the free layer 3b through a three-stage process, the longitudinal bias magnetic field is more reliably applied and the magnetic field application is performed. The amount can be easily controlled.

  Another advantage of the magnetoresistive head 65a is that in the laminated film composed of the magnetic layer 8, the third nonmagnetic layer 13, and the second magnetic layer 12, between the magnetic layer 8 and the second magnetic layer 12. This is a case where strong antiferromagnetic coupling occurs, and the magnetization of the magnetic layer 8 (product of saturation magnetization and film thickness) and the magnetization of the second magnetic layer 12 are made substantially equal. In this case, since the laminated film is an integrated film that does not effectively have magnetization, it does not have sensitivity to the magnetic field even when an external magnetic field is applied. Therefore, in this case, only the free layer 3b has the sensitivity to the external magnetic field in the structure of FIG. 61, and the track width when the magnetoresistive head 65a functions as a reproducing head is the pattern of the free layer 3b. It depends only on the width. This is advantageous in making a narrow track head. In this case as well, the longitudinal bias magnetic field is accurately applied to the free layer 3b by the above process. Further, that the magnetization of the magnetic layer 8 is substantially equal to the magnetization of the second magnetic layer 12 means that the above-described effect is recognized.

  In this embodiment, the fixed layer underlayer 6a, the second nonmagnetic layer 9, the third nonmagnetic layer 13 and the upper layer 7 may be omitted. Further, a vertical bias layer underlayer may be provided below the vertical bias layer 2b. In some cases, a protective layer for the vertical bias layer is provided on the vertical bias layer 2 b, and an upper layer is provided on the second magnetic layer 12.

  Furthermore, in this example, the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, the nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 were all patterned in the same manner. Although an example is shown, it is sufficient that the patterning is performed on at least the free layer 3b, and the portion of the laminated film including the fixed layer base layer 6a, the fixed layer 6b, the fixed layer 5, and the nonmagnetic layer 4 is patterned. It does not have to be. Further, the pattern of the fixed layer underlayer 6a may be larger than the pattern of the fixed layer 6b, the pattern of the fixed layer 6b may be larger than the pattern of the fixed layer 5, and the pattern of the fixed layer 5 may be a nonmagnetic layer. The pattern of the nonmagnetic layer 4 may be larger than the pattern of the free layer 3b. In this embodiment, the upper surface of the insulating layer 11 is the same height as the upper surface of the pattern of the free layer 3b. However, the upper surface of the insulating layer 11 is lower than the upper surface of the pattern of the free layer 3b. It may be higher. Further, FIG. 61 shows the case where the second nonmagnetic layer 9 is patterned in the same manner as the free layer 3b, but the pattern of the second nonmagnetic layer 9 may be wider than the pattern of the free layer 3b. Good.

  62 and 63 are partial cross-sectional views showing the configuration of the magnetoresistive effect element according to a modification of the present embodiment. 61 shows an example in which the first magnetic layer 8, the third nonmagnetic layer 13, and the second magnetic layer 12 are not patterned. In the magnetoresistive effect element 36b shown in FIG. 8. The ends of the patterns of the third nonmagnetic layer 13 and the second magnetic layer 12 are arranged below the pattern of the longitudinal bias layer 2b.

  In the magnetoresistive element 36c shown in FIG. 63, the end portions of the patterns of the magnetic layer 8, the third nonmagnetic layer 13, and the second magnetic layer 12 are in contact with the end portions of the pattern of the longitudinal bias layer 2b. ing. The magnetoresistive effect elements 36b and 36c can also be used for a magnetoresistive effect head, similarly to the magnetoresistive effect element 36a.

  Next, a ninth embodiment of the present invention will be described. 64 to 67 are partial cross-sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, the structure shown in FIG. 58 is formed by the steps shown in FIGS. 55 to 58 in the eighth embodiment.

  Next, as shown in FIG. 64, the photoresist 20 is removed, and a photoresist 21 is formed so as to cover regions around the second nonmagnetic layer 9 in the second nonmagnetic layer 9 and the insulating layer 11.

  Next, as shown in FIG. 65, the concave portion 11a is formed in the insulating layer 11 using the photoresist 21 as a mask, and the vertical bias layer base layer 2a and the vertical bias layer 2b are formed so as to be embedded in the concave portion 11a.

  Next, as shown in FIG. 66, the photoresist 21 is removed, and the first magnetic layer 8, the third nonmagnetic layer 13, and the second magnetic layer 12 are formed in this order, and the magnetoresistive effect element 37a is formed. To do.

  Next, as shown in FIG. 67, the upper conductive layer 15 is formed on the second magnetic layer 12, a photoresist (not shown) is formed, and dry etching or the like is performed using this photoresist as a mask. After patterning the upper conductive layer 15, the photoresist is removed, the upper shield layer 17 is formed thereon, and the magnetoresistive head 67a is formed.

  Next, the configuration of the magnetoresistive head 67a according to the present embodiment will be described. In the magnetoresistive head 67a, the lower shield layer 16 is provided, the lower conductive layer 1 is provided on the lower shield layer 16, and the fixed layer base layer 6a patterned on the lower conductive layer 1, the fixed layer 6b, a fixed layer 5, a nonmagnetic layer 4, a free layer 3b, and a second nonmagnetic layer 9 are formed in this order, and this pattern is embedded with an insulating layer 11. As shown in FIG. 67, the insulating layer 11 has a concave portion 11a on the upper surface, and the vertical bias layer base layer 2a and the vertical bias layer 2b are formed so as to be embedded in the concave portion 11a. The magnetic layer 8, the third nonmagnetic layer 13, and the second magnetic layer 12 are provided on the second nonmagnetic layer 9, the insulating layer 11, and the longitudinal bias layer 2b. Further, a patterned upper conductive layer 15 is provided on the second magnetic layer 12, and an upper shield layer 17 is provided on the pattern of the second magnetic layer 12 and the upper conductive layer 15.

  Next, a tenth embodiment of the present invention will be described. 68 to 73 are partial cross-sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, as shown in FIG. 68, the lower shield layer 16 and the lower conductive layer 1 are sequentially formed on a substrate (not shown).

  Next, as shown in FIG. 69, the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, the first nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer are formed on the lower conductive layer 1. 9, the first magnetic layer 8, the third nonmagnetic layer 13, the second magnetic layer 12, the longitudinal bias layer underlayer 2a, and the longitudinal bias layer 2b are formed and laminated in this order.

  Next, as shown in FIG. 70, a patterned photoresist 20 is formed on the vertical bias layer 2b.

  Next, as shown in FIG. 71, the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, the nonmagnetic layer 4, the free layer 3b, the second layer, and the like by the dry etching or the like using the photoresist 20 as a mask. The nonmagnetic layer 9, the magnetic layer 8, the third nonmagnetic layer 13, the second magnetic layer 12, the longitudinal bias layer underlayer 2 a and the longitudinal bias layer 2 b are etched and patterned to form a fixed layer underlayer 6 a and fixed Layer 6b, pinned layer 5, nonmagnetic layer 4, free layer 3b, second nonmagnetic layer 9, magnetic layer 8, third nonmagnetic layer 13, second magnetic layer 12, longitudinal bias layer underlayer 2a Then, a pattern 29d composed of the vertical bias layer 2b is formed.

  Next, as shown in FIG. 72, the insulating layer 11 is formed so as to fill the pattern 29d, and the magnetoresistive effect element 38a is formed.

  Next, as shown in FIG. 73, the photoresist 20 is removed, the upper conductive layer 15 is formed on the vertical bias layer 12 and the insulating layer 11, and a photoresist (not shown) is formed. After patterning the upper conductive layer 15 by means such as dry etching as a mask, the photoresist is removed, the upper shield layer 17 is formed thereon, and a magnetoresistive head is formed.

  Next, the configuration of the magnetoresistive head according to this embodiment will be described. As shown in FIG. 73, in the magnetoresistive head, a lower shield layer (not shown) is provided, and the lower conductive layer 1 is provided on the lower shield layer. On the lower conductive layer 1, a patterned fixed layer underlayer 6a, fixed layer 6b, fixed layer 5, nonmagnetic layer 4, free layer 3b, second nonmagnetic layer 9, and first magnetic layer are formed. 8, a pattern 29d including a third nonmagnetic layer 13, a second magnetic layer 12, a longitudinal bias layer base layer 2a, and a longitudinal bias layer 2b is provided, and the pattern 29d is embedded in the insulating layer 11 and the longitudinal direction of the pattern 29d is The bias layer 2 b is exposed on the upper surface of the insulating layer 1. Further, a patterned upper conductive layer 15 is provided on the pattern 29 d and the insulating layer 1, and an upper shield layer 17 is provided on the upper conductive layer 15 and the insulating layer 11.

  Next, the operation of the magnetoresistive head according to this embodiment will be described. The magnetic field applied to the magnetoresistive head is applied to the second magnetic layer 12 via the longitudinal bias layer 2b. Next, the longitudinal bias magnetic field is changed from the second magnetic layer 12 through the third nonmagnetic layer 13 by magnetic coupling such as ferromagnetic coupling, antiferromagnetic coupling, or magnetostatic coupling. One magnetic layer 8 is applied. Further, the longitudinal bias magnetic field is applied to the free layer by magnetic coupling such as ferromagnetic coupling, antiferromagnetic coupling, or magnetostatic coupling through the first magnetic layer 8 to the second nonmagnetic layer 9. Applied to 3b.

  At this time, the magnetic coupling between the second magnetic layer 12 and the magnetic layer 8 is controlled by the constituent material and the film thickness of the third nonmagnetic layer 13. Further, the magnetic coupling between the magnetic layer 8 and the free layer 3b is controlled by the constituent material and the film thickness of the second nonmagnetic layer 9. As described above, since the longitudinal bias magnetic field is applied from the longitudinal bias layer 2b to the free layer 3b through the three-stage process, the longitudinal bias magnetic field is reliably applied and the applied longitudinal bias magnetic field can be easily controlled. .

  The fixed layer underlayer 6a, the second nonmagnetic layer 9, the third nonmagnetic layer 13, and the longitudinal bias layer underlayer 2a can be omitted. Further, a protective layer for the longitudinal bias layer 2 b may be provided on the longitudinal bias layer 2 b, and an upper layer may be provided on the second magnetic layer 12.

  FIG. 74 is a partial cross-sectional view showing a configuration of a magnetoresistive effect element 38b according to a modification of the present embodiment. In the magnetoresistive effect element 38b, a lower conductive layer 1 is provided on a base (not shown), and a fixed layer underlayer 6a, a fixed layer 6b, a fixed layer 5, and a non-patterned layer are formed on the lower conductive layer 1. A magnetic layer 4, a free layer 3 b, a second nonmagnetic layer 9, a magnetic layer 8, a longitudinal bias layer base layer 2 a and a longitudinal bias layer 2 b are provided, which are embedded in the insulating layer 11, and the longitudinal bias layer 2 b is insulated. The upper surface of the layer 11 is exposed.

  The longitudinal bias magnetic field applied to the magnetoresistive effect element 38b is first applied to the first magnetic layer 8 via the longitudinal bias layer 2b. Next, it is applied to the free layer 3b from the first magnetic layer 8 through the second nonmagnetic layer 9 by magnetic coupling such as ferromagnetic coupling, antiferromagnetic coupling, or magnetostatic coupling. Is done. At this time, the magnetic coupling between the magnetic layer 8 and the free layer 3b is controlled by the constituent material and the film thickness of the second nonmagnetic layer 9.

  Thus, since the longitudinal bias magnetic field is applied from the longitudinal bias layer 2b to the free layer 3b through a two-step process, the application of the longitudinal bias magnetic field is ensured and the application amount can be easily controlled.

  In this embodiment, the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, the nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 are all similarly patterned. Although an example is shown, it is sufficient that the patterning is performed at least on the free layer 3b, and the portion of the laminated film including the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, and the nonmagnetic layer 4 is patterned. It does not have to be. Further, the pattern of the fixed layer underlayer 6a may be larger than the pattern of the fixed layer 6b, the pattern of the fixed layer 6b may be larger than the pattern of the fixed layer 5, and the pattern of the fixed layer 5 may be a nonmagnetic layer. The pattern of the first nonmagnetic layer 4 may be larger than the pattern of the free layer 3b.

  Next, an eleventh embodiment of the present invention will be described. 75 to 84 are partial cross-sectional views showing the method of manufacturing the magnetoresistive head in this embodiment in the order of steps.

  First, as shown in FIG. 75, a lower shield layer 16 and a lower conductive layer 1 are sequentially formed on a substrate (not shown).

  Next, as shown in FIG. 76, the fixed layer base layer 6a, the fixed layer 6b, the fixed layer 5, the first nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer are formed on the lower conductive layer 1. 9 are formed and laminated in this order.

  Next, as shown in FIG. 77, a patterned photoresist 20 is formed on the second nonmagnetic layer 9, and the fixed layer underlayer 6a, fixed layer 6b, fixed layer are formed by means such as dry etching. 5. The first nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 are patterned to form a pattern 29e composed of these layers.

  Next, as shown in FIG. 78, the insulating layer 11 is formed around the pattern 29e so as to embed the pattern 29e. At this time, the height of the insulating layer 11 is equal to the height of the pattern 29e in the vicinity of the pattern 29e, and is slightly lower than the height of the pattern 29e at a certain distance from the pattern 29e, and the space between them is smooth. Connect with a gentle slope.

  Next, as shown in FIG. 79, the vertical bias layer base layer 2 a and the vertical bias layer 2 b are formed on the insulating layer 11. At this time, the thickness of the longitudinal bias layer 2b is changed along the inclination of the insulating layer 11, and the thickness of the longitudinal bias layer 2b is increased at a position away from the pattern 29e by a certain distance. Try to be thin.

  Next, as shown in FIG. 80, the photoresist 20 is removed, and the first magnetic layer 8b and the fourth nonmagnetic layer 18 are formed on the second nonmagnetic layer 9 and the longitudinal bias layer 2b.

  Next, as shown in FIG. 81, the second free layer 19, the fifth nonmagnetic layer 20, the second pinned layer 26, the second pinned layer 27, and the upper layer 7 are formed in this order.

  Next, as shown in FIG. 82, a photoresist 21 is formed so as to cover a region matching the pattern 29e on the upper layer 7, and the fourth nonmagnetic layer 18 and the second free magnetic layer 18 are masked using the photoresist 21 as a mask. The layer 19, the fifth nonmagnetic layer 20, the second pinned layer 26, the second pinned layer 27, and the upper layer 7 are patterned, and the fourth nonmagnetic layer 18, the second free layer 19, the fifth layer are patterned. A pattern 29 f including the nonmagnetic layer 20, the second pinned layer 26, the second pinned layer 27, and the upper layer 7 is formed.

  Next, as shown in FIG. 83, the insulating layer 11b is formed around the pattern 29f so as to embed the pattern 29f, and the magnetoresistive effect element 39a formed on the lower shield layer 16 is formed.

  Next, as shown in FIG. 84, the photoresist 21 is removed, an upper conductive layer 15 is formed on the upper layer 7 and the insulating layer 11b, a photoresist (not shown) is formed, and this photoresist is masked. After patterning the upper conductive layer 15 by means such as dry etching, the photoresist is removed, the upper shield layer 17 is formed thereon, and the magnetoresistive head 69a is formed.

  Next, the configuration of the magnetoresistive effect element 39a according to the present embodiment will be described. As shown in FIG. 84, the magnetoresistive effect element 39a is characterized by a nonmagnetic layer, a free layer, and a nonmagnetic layer that are vertically symmetrical about the first magnetic layer 8b to which a longitudinal bias magnetic field is applied from the longitudinal bias layer 2a. The layer, the fixed layer, and the fixed layer are formed.

  In the magnetoresistive effect element 39 a, the lower shield layer 16 is provided, and the lower conductive layer 1 is provided on the lower shield layer 16. On the lower conductive layer 1, a pattern composed of a patterned fixed layer underlayer 6 a, fixed layer 6 b, fixed layer 5, first nonmagnetic layer 4, free layer 3 b and second nonmagnetic layer 9. 29e is provided, and the pattern 29e is embedded in the insulating layer 11.

  The upper surface of the insulating layer 11 is substantially equal to the upper surface of the pattern 29e in the vicinity of the pattern 29e, and is slightly lower than the upper surface of the pattern 29e at a position spaced apart from the pattern 29e, and there is a vertical bias underlayer 2a. The pattern of the vertical bias layer 2 b is provided so that at least a part of the pattern in the film thickness direction is embedded in the insulating layer 11. A first magnetic layer 8b is provided on the pattern 29e and the longitudinal bias layer 2b.

  On the first magnetic layer 8b, a patterned fourth nonmagnetic layer 18, second free layer 19, fifth nonmagnetic layer 20, second pinned layer 26, and second pinned layer are formed. 27 and an upper layer 7 are provided, and the pattern 29f is embedded in the insulating layer 11b. Further, the upper conductive layer 15 and the upper shield layer 17 are provided on the pattern 29f and the insulating layer 11b.

  Next, the operation of the magnetoresistive effect element 39a according to the present embodiment will be described. Similar to the free layer 3b, the second free layer 19 is a magnetic layer that changes the direction of magnetization according to the direction and magnitude of the magnetic field when the sensor including the magnetoresistive element 39a receives an external magnetic field. . The fifth nonmagnetic layer 25 is disposed between the second free layer 19 and the second pinned layer 26, and has an angle formed by the magnetization direction of the second free layer and the magnetization direction of the second pinned layer 26. It is a layer whose electrical resistance value changes accordingly. Since the magnetization direction of the second pinned layer 26 is pinned by the second pinned layer 27, if the magnetization direction of the free layer changes according to the direction and magnitude of the external magnetic field, the pinned pinned layer 26 A change occurs between the magnetization direction and the magnetization direction of the free layer, and the resistance of the fifth nonmagnetic layer 25 changes.

  In the magnetoresistive effect element 39a, the amount of change in electric resistance when a sense current is passed from the lower conductive layer 1 to the upper conductive layer 15 is the amount of change in electric resistance generated in the pattern 29e below the magnetic layer 8b. This is the sum of the change in electrical resistance value generated in the pattern 29f above the magnetic layer 8b.

  Usually, in the magnetoresistive effect element, the free layer is inevitably influenced by the circumferential current magnetic field caused by the current flowing perpendicular to the film surface. In the magnetoresistive effect element 39a according to the present embodiment, however, Since the influence of the current magnetic field received by the free layer 3b and the influence of the current magnetic field received by the second free layer 19 are reversed, it is possible to significantly cancel out the influence of the current magnetic field as a whole.

  In the magnetoresistive element 39a, the applied longitudinal bias magnetic field is first applied to the first magnetic layer 8b via the longitudinal bias layer 2b. Next, the first magnetic layer 8 b is applied to the free layer 3 b via the second nonmagnetic layer 9 and the second nonmagnetic layer 18 is applied to the second free layer 19. The second nonmagnetic layer 9 controls the magnetic coupling between the second magnetic layer 8b and the free layer 3b by its constituent material and film thickness, and the fourth nonmagnetic layer 18 has its constituent material and film. The magnetic coupling between the magnetic layer 8b and the second free layer 19 is controlled by the thickness. As described above, since the longitudinal bias magnetic field is applied from the longitudinal bias layer 2b to the free layer 3b and the second free layer 19 by a two-step process, the application of the longitudinal bias magnetic field becomes more reliable and the application amount is controlled. Becomes easier.

  In this embodiment, the longitudinal bias layer underlayer 2a, the fixed layer underlayer 6a, the second nonmagnetic layer 9, the fourth nonmagnetic layer 18, and the upper layer 7 can be omitted. In some cases, a protective layer for the vertical bias layer is provided on the vertical bias layer 2b. In the present embodiment, the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, the first nonmagnetic layer 4, the free layer 3b, and the second nonmagnetic layer 9 are all similarly patterned. However, it is sufficient that the patterning is performed on at least the free layer 3b, and the fixed layer underlayer 6a, the fixed layer 6b, the fixed layer 5, and the first nonmagnetic layer 4 are patterned. It does not have to be.

  Furthermore, the pattern of the fixed layer underlayer 6a may be larger than the pattern of the fixed layer 6b, the pattern of the fixed layer 6b may be larger than the pattern of the fixed layer 5, and the pattern of the fixed layer 5 may be a nonmagnetic layer. The pattern of the first nonmagnetic layer 4 may be larger than the pattern of the free layer 3b.

  Furthermore, in the present embodiment, an example is shown in which the height of the upper surface of the insulating layer 11 at a certain distance from the patterns 29e and 29f is lower than the upper surface of the pattern of the free layer 3b. May be the same as the upper surface of the pattern of the free layer 3b or higher than the upper surface of the pattern of the free layer 3b. Further, the pattern of the longitudinal bias layer 2b may be separated from the pattern of the free layer 3b and the pattern of the second free layer 19. The fourth nonmagnetic layer 18 may be patterned together with the second free layer 19, and the fourth nonmagnetic layer 18 may extend beyond the pattern of the second free layer 19. The pattern of the second nonmagnetic layer 9 may be wider than the pattern of the free layer 3b.

  85 to 87 are partial cross-sectional views showing the configuration of a magnetoresistive element according to a modification of the present embodiment. FIG. 85 shows an example in which the fourth nonmagnetic layer 18 is not patterned.

  FIG. 86 shows an example in which the height of the upper surface of the insulating layer 11 is higher than the height of the upper surface of the pattern of the free layer 3b.

  Further, FIG. 87 shows an example in which the pattern of the longitudinal bias layer 2 b is separated from the pattern of the free layer 3 b and the pattern of the second free layer 19. The magnetoresistive effect element shown in FIGS. 85 to 87 can also be used for the magnetoresistive effect head.

  Next, a twelfth embodiment of the present invention will be described. 88 to 91 are partial sectional views showing the structure of the magnetoresistive head according to this embodiment.

  First, a laminated body as shown in FIG. 3 is formed by the steps shown in FIGS. 1 to 3 in the first embodiment.

  Next, as shown in FIG. 88, the second magnetic layer underlayer 12a1, the second magnetic layer 12b, the third nonmagnetic layer 13, and the second magnetic layer are formed on the lower conductive layer 1 and the longitudinal bias layer 2b. 8. The second nonmagnetic layer 9, the free layer 3b, the first nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are laminated in this order.

  Next, as shown in FIG. 89, a photoresist 21 is formed on the upper layer 7 at a position matching the central portion of the region where the concave portion 1a of the lower conductive layer 1 is not formed.

  Next, as shown in FIG. 90, the second nonmagnetic layer 9, the free layer 3b, the first nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are etched by means such as dry etching. Then, the portion removed by etching is buried with the insulating layer 11 to form the magnetoresistive element 39b.

  Next, as shown in FIG. 91, the photoresist 21 is removed, the upper conductive layer 15 is formed, a photoresist (not shown) is formed, and the upper conductive layer is formed by means such as dry etching using this photoresist as a mask. After patterning the layer 15, the photoresist is removed, the upper shield layer 17 is formed thereon, and the magnetoresistive head 69b is formed.

  Next, the configuration of the magnetoresistive head 69b according to this embodiment will be described. As shown in FIG. 91, in the magnetoresistive head 69b, the lower shield layer 16 is provided, and the lower conductive layer 1 is provided on the lower shield layer 16. A concave portion 1a is provided on the upper surface of the lower conductive layer 1, and a vertical bias layer base layer 2a and a vertical bias layer 2b are provided so as to be embedded in the concave portion 1a. A second magnetic layer underlayer 12a, a second magnetic layer 12b, a third nonmagnetic layer 13 and a first magnetic layer 8 are provided on the lower conductive layer and the longitudinal bias layer 2b. The second nonmagnetic layer 9, the free layer 3b, the nonmagnetic layer 4, the fixed layer 5, and the fixed layer 6b are located immediately above the portion surrounded by the patterns of the two vertical bias layers on the first magnetic layer 8. And the pattern of the upper layer 7 is formed.

  In this embodiment, the second nonmagnetic layer 9 is patterned with the free layer 3b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7. The nonmagnetic layer 9 may extend like the pattern of the magnetic layer 8, extends from the free layer 3 b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6 b, and the upper layer 7, and extends from the magnetic layer 8. It may be smaller than the pattern.

  Further, the longitudinal bias layer underlayer 2a, the second nonmagnetic layer underlayer 12a, and the upper layer 7 can be omitted. A protective layer for the longitudinal bias layer may be provided on the longitudinal bias layer 2b. Furthermore, the second magnetic layer underlayer 12a, the second magnetic layer 12b, the third nonmagnetic layer 13, and the first magnetic layer 8 do not necessarily have to be spread as shown in FIG.

  92 and 93 are partial cross-sectional views showing the configuration of the magnetoresistive effect element according to a modification of the present embodiment. In FIG. 92, the ends of the second magnetic layer underlayer 12a, the second magnetic layer 12b, the third nonmagnetic layer 13, and the first magnetic layer 8 are in contact with the ends of the pattern in the longitudinal bias layer 2b. An example is shown.

  In FIG. 93, the end portions of the second magnetic layer underlayer 12a, the second magnetic layer 12b, the third nonmagnetic layer 13, and the first magnetic layer 8 run over the pattern of the longitudinal bias layer 2b. An example is shown.

  The pattern of the second magnetic layer 12b may be larger than the pattern of the third nonmagnetic layer 13, and the pattern of the third nonmagnetic layer 13 may be larger than the pattern of the magnetic layer 8b.

  Next, a thirteenth embodiment of the present invention is described. 94 to 99 are partial cross-sectional views showing the configuration of the magnetoresistive head according to this embodiment.

  First, as shown in FIG. 94, a lower shield layer 16 and a lower conductive layer 1 are sequentially formed on a substrate (not shown).

  Next, as shown in FIG. 95, the vertical bias layer base layer 2 a and the vertical bias layer 2 b are formed on the lower conductive layer 1.

  Next, as shown in FIG. 96, the second magnetic layer underlayer 12a, the second magnetic layer 12b, the third nonmagnetic layer 13, the magnetic layer 8, the second nonmagnetic layer 9, and the free layer underlayer. 3a, free layer 3b, nonmagnetic layer 4, pinned layer 5, pinned layer 6b and upper layer 7 are laminated in this order.

  Next, as shown in FIG. 97, a patterned photoresist 21 is formed on the upper layer 7.

  Next, as shown in FIG. 98, using the photoresist 21 as a mask, the second nonmagnetic layer 9, the free layer 3b, the first nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are formed. After etching by means such as dry etching, the portion removed by etching is filled with the insulating layer 11 to form the magnetoresistive effect element 39c.

  Next, as shown in FIG. 99, the photoresist 20 is removed, an upper conductive layer 15 is formed on the insulating layer 11 and the upper layer 7, a photoresist (not shown) is formed, and this photoresist is masked. After the upper conductive layer 15 is patterned by means such as dry etching, the photoresist is removed, the upper shield layer 17 is formed on the upper conductive layer 15, and the magnetoresistive head 69c is formed.

  Next, the configuration of the magnetoresistive head 69c according to the present embodiment will be described. As shown in FIG. 99, in the magnetoresistive head 69c, the lower conductive layer 1 is provided on the lower shield layer 16, and the vertical bias layer base layer 2a and the vertical bias layer 2b are provided thereon, on which the lower conductive layer 1 is provided. The second magnetic layer underlayer 12a, the second magnetic layer 12b, the third nonmagnetic layer 13 and the magnetic layer 8b are provided. On the magnetic layer 8b, a patterned second nonmagnetic layer 9, a free layer 3b, a nonmagnetic layer 4, a fixed layer 5, a fixed layer 6b, and an upper layer 7 are provided. 11 is embedded. An upper conductive layer 15 is provided on the upper layer 7 and the insulating layer 11, and an upper shield layer 17 is provided thereon.

  In the present embodiment, an example in which the second nonmagnetic layer 9, the free layer 3b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 are patterned is shown. The nonmagnetic layer 9 may extend as the pattern of the first magnetic layer 8b, or may extend from the pattern of the free layer 3b, the nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7. And may be smaller than the pattern of the magnetic layer 8b.

  Further, the longitudinal bias film foundation layer 2a, the second nonmagnetic layer foundation layer 12a, and the upper layer 7 may be omitted. Further, a protective layer for the vertical bias layer can be provided on the vertical bias layer 2b. Further, the second magnetic layer underlayer 12a, the second magnetic layer 12b, the third nonmagnetic layer 13, and the first magnetic layer 8 do not necessarily have to be spread.

  100 and 101 are partial cross-sectional views showing the configuration of the magnetoresistive element in a modification of the present embodiment. FIG. 100 shows an example in which the second magnetic layer underlayer 12a, the second magnetic layer 12b, the third nonmagnetic layer 13, and the first magnetic layer 8 are patterned.

  In FIG. 101, the second magnetic layer underlayer 12a, the second magnetic layer 12b, the third nonmagnetic layer 13, and the first magnetic layer 8 are patterned, and the size thereof is the second nonmagnetic layer. 9, an example in which the pattern is substantially the same as the pattern of the free layer 3b, the first nonmagnetic layer 4, the fixed layer 5, the fixed layer 6b, and the upper layer 7 is shown. The magnetoresistive effect element shown in FIGS. 100 and 101 can also be used for the magnetoresistive head.

  Furthermore, the pattern of the second magnetic layer 12b may be larger than the pattern of the third nonmagnetic layer 13, and the pattern of the third nonmagnetic layer 13 may be larger than the pattern of the first magnetic layer 8b.

  Next, an application example of the magnetoresistive effect element of the present invention to a recording / reproducing head and a recording / reproducing system will be described. A fourteenth embodiment of the present invention will be described. FIG. 102 is a schematic diagram of a magnetic recording / reproducing head according to the present embodiment. In this magnetic recording / reproducing head (recording / reproducing element unit 130), a reproducing head 45 that includes the magnetoresistive head as a part thereof and reads a signal from a recording medium is provided on a base 42. On the reproducing head 45, there is provided a recording head 46 which comprises a magnetic pole 43, a plurality of coils 41 and an upper magnetic pole 44 and writes a signal on a recording medium. In this case, the upper shield layer may be shared with the magnetic pole 43 or may be provided separately. As shown in FIG. 102, by forming the magnetically sensitive portion of the reproducing head 45 and the magnetic gap of the recording head at a position where they overlap each other on the same slider, they can be simultaneously positioned on the same track. At this time, the recording head 46 applies a magnetic field to a recording medium (not shown) to write data, and the reproducing head 45 reads the data recorded on the recording medium. This recording / reproducing head is processed into a slider and mounted on a magnetic recording / reproducing apparatus.

FIG. 103 is a schematic diagram showing the configuration of the magnetoresistive conversion system according to the present example provided with the magnetic recording / reproducing head shown in FIG. In this magnetoresistive conversion system, a recording / reproducing element unit 130 (magnetic recording / reproducing head) is formed in a substrate 129 constituting a slider, and is protected by a protective film 132. The substrate 129 is made of, for example, Al ₂ O ₃ —TiC composite ceramics, and the protective film 132 is made of, for example, diamond-like carbon.

  In the recording / reproducing element unit 130, an electrode terminal 131a connected to the recording element unit (recording head) and an electrode terminal 131b connected to the reproducing element unit (reproducing head) are formed. The electrode terminal 131a is connected to a current driving circuit 133 that applies a driving current to the recording element portion to cause a recording operation. Further, the electrode terminal 131b detects a current generation circuit 134 that supplies a sense current to the reproducing element unit and a voltage change generated by a change in resistivity of the reproducing element unit as a function of an applied magnetic field, and records recording data information on the recording medium. It is connected to a data reading circuit 135 for reading. As described above, the magnetoresistive conversion system includes the recording / reproducing element unit 130, the current generation circuit 134, and the data reading circuit 135.

  104 is a schematic diagram showing an example of a magnetic recording system using the magnetoresistive conversion system shown in FIG. This magnetic recording system includes a magnetoresistive conversion system including a magnetic recording / reproducing head 103, a sense current detecting means 107, and a controller 108, a magnetic recording medium 102 having a plurality of tracks for data recording, and a magnetic recording / reproducing. A first actuator 106 made of a VCM (voice coil motor) that moves the head 103 to a predetermined position on the magnetic recording medium 102 and a second actuator 101 made of a motor that rotates the magnetic recording medium 102 are provided. . The magnetic recording / reproducing head 103 is supported by a suspension 104 and an arm 105.

  FIG. 105 is a perspective view showing a specific example of the magnetic recording system. In this example, a reproducing head 51 and a recording head 50 are formed on a substrate 52 that also serves as a head slider, and these are positioned on a recording medium 53 for reproduction. The recording medium 53 rotates, and the head slider moves relative to the recording medium 53 at a height of 0.2 μm or less or in a contact state. By this mechanism, the reproducing head 51 is set at a position where the magnetic signal recorded on the recording medium 53 can be read from the leakage magnetic field 54.

  As the magnetic storage system of the present invention, a hard disk device, a flexible disk device, and a magnetic tape device can be used. The hard disk device includes a fixed disk device in which a disk cannot be replaced and a device in which a disk can be replaced.

  Next, a magnetic storage device manufactured by applying the present invention will be described. The magnetic storage device includes three magnetic disks (magnetic recording media) on a base, and houses a head drive circuit, a signal processing circuit, and an input / output interface on the back surface of the base. The outside is connected by a 32-bit bus line. Six heads are arranged on both sides of the magnetic disk, and a rotary actuator (actuator means) for driving the head, a drive and control circuit thereof, and a spindle direct connection motor for disk rotation are mounted. The diameter of the disk is 63 mm, and the data surface uses a diameter of 10 mm to 57 mm. The embedded servo system is used, and since there is no servo surface, it is possible to increase the density. This device can be directly connected as an external storage device of a small computer. The input / output interface is equipped with a cache memory and corresponds to a bus line having a transfer rate in the range of 5 to 20 megabytes per second. It is also possible to configure a large-capacity magnetic disk device by providing an external controller and connecting a plurality of this device.

First, for comparison, a head having the structure shown in FIGS. 106 and 107 described in the section of the prior art was prepared. After film formation, heat treatment was performed for 5 hours at a temperature of 250 ° C. while applying a magnetic field of 7.9 × 10 ⁵ A / m in a direction perpendicular to the magnetic field during film formation.

The following materials were used as the elements constituting the head. The composition of each material shown below is the composition (atomic%) of the target used in sputtering, and the thickness in parentheses is the layer thickness.
Base: 3mm thick alumina layer on 1.2mm thick Altic Lower shield layer: Co89Zr4Ta4Cr3 (1μm)
Lower conductive layer ... Ta (20μm)
Upper electrode layer… None Upper shield layer… Co65Ni12Fe23 (1 μm)
Insulating layer ... Alumina (20nm)
Longitudinal bias underlayer ... Cr (10nm)
Longitudinal bias: Co74.5Cr10.5Pt15 (33 nm)
Lower gap layer ... None Upper gap layer ... None Upper layer ... Ta (5 nm)
Free underlayer ... Ta (3nm)
Immobilization layer: Pt46Mn54 (20 nm)
Fixed layer: (Co90Fe10 (3 nm) / Ru (0.7 nm) / Co50Fe50 (3 nm)) Three-layer film Nonmagnetic layer: Al oxide (0.7 nm)
Free layer: Ni82Fe18 (5 nm)
Upper layer ... Ta (3nm)

  This head was processed and sliced into a recording / reproducing integrated head such as the reproducing head 45 shown in FIG. 102, and data was recorded / reproduced on a CoCrTa medium. At this time, the write track width was 0.7 μm, and the read track width was 0.4 μm.

  The processing of the TMR element part was performed by a photoresist process and a milling process using i-line. The photoresist curing process at the time of creating the coil portion of the write head portion was performed by maintaining the temperature at 250 ° C. for 2 hours.

By this process, the magnetization direction of the fixed layer and the fixed layer, which should originally face the element height direction, is rotated and does not operate correctly as a magnetoresistive effect element. Magnetization heat treatment was performed for 1 hour in a magnetic field at a temperature of 200 ° C. and 4.0 × 10 ⁴ A / m. The rotation of the easy axis of the free layer in the magnetization direction by this magnetization heat treatment was hardly observed from the magnetization curve.

The coercive force of the medium was 2.4 × 10 ⁵ A / m, and MrT (product of residual magnetization and film thickness) was 0.35 emu / cm ² . Reproduction output, (S / N) ratio, and effective track width were measured using 10 prototyped heads. The measurement results for the structure of FIG. 106 are shown in Table 1, and the measurement results for the structure of FIG. 107 are shown in Table 2, respectively.

  In the case of the structure of FIG. 106, the reproduction output is as high as 2.8 to 3.1 mV, but the (S / N) ratio is as low as 18 to 21 dB. This is because Barkhausen noise is included in the reproduction signal. When the RH loop of the head is measured, the hysteresis of the free layer magnetization reversal is large, and Barkhausen noise is generated due to the domain wall movement of the free layer. It became clear that there was. In the structure of FIG. 106, since the longitudinal bias layer and the free layer are separated from each other by the insulating layer, the longitudinal bias magnetic field is not sufficiently applied to the free layer, and the longitudinal bias magnetic field does not contribute to the reduction of Barkhausen noise. It is considered.

  On the other hand, in the case of the structure of FIG. 107, the reproduction output was as low as 0 to 1.2 mV, and the (S / N) ratio was accordingly low as 0 to 17 dB. This is because the sense current leaks to the longitudinal bias layer 2b and does not sufficiently flow to the nonmagnetic layer 4. In this structure, in principle, leakage of the sense current to the longitudinal bias layer 2b should be prevented, but the longitudinal bias layer 2b is a laminated body including the fixed layer 5, the nonmagnetic layer 4, and the free layer 3. Since it is located in the vicinity of the end of the nonmagnetic layer 4 (barrier layer) in FIG. 2, it is precisely manufactured so as to prevent the sense current from leaking into the longitudinal bias layer 2b and not sufficiently flowing into the nonmagnetic layer 4. Is considered to be difficult.

Next, as an example of the present invention, a magnetoresistive head having the structure shown in FIGS. 7, 18, 28, 34, 46 and 61 was produced. At this time, the following materials were used as elements constituting the magnetoresistive head.
Base: 3mm thick alumina layer on 1.2mm thick Altic Lower shield layer: Co89Zr4Ta4Cr3 (1μm)
Lower conductive layer ... Ta (20nm)
Upper electrode layer… None Upper shield layer… Co65Ni12Fe23 (1 μm)
Insulating layer ... Alumina (20nm)
Longitudinal bias underlayer ... Cr (10nm)
Longitudinal bias: Co74.5Cr10.5Pt15 (33 nm)
Lower gap layer ... None Upper gap layer ... None Upper layer ... Ta (5 nm)
Free underlayer ... Ta (3nm)
Magnetic underlayer ... Ta (3nm)
Immobilization layer: Pt46Mn54 (20 nm)
Second immobilization layer: Pt46Mn54 (20 nm)
Fixed layer: (Co90Fe10 (3 nm) / Ru (0.7 nm) / Co50Fe50 (3 nm)) three-layer film Second fixed layer: (Co90Fe10 (3 nm) / Ru (0.7 nm) / Co50Fe50 (3 nm)) three layers Film First nonmagnetic layer: Al oxide (0.7 nm)
Second nonmagnetic layer ... Ru (0.75 nm)
Third nonmagnetic layer ... Ru (0.75 nm)
Fourth nonmagnetic layer ... Ru (0.75 nm)
Fifth nonmagnetic layer: Al oxide (0.7 nm)
Free layer: Ni82Fe18 (5 nm)
Magnetic layer: Ni82Fe18 (5 nm)
Upper layer ... Ta (3nm)

  This head was processed into a recording / reproducing integrated head such as the reproducing head 45 shown in FIG. 102 and a slider processed, and data was recorded / reproduced on a CoCrTa medium. At this time, the write track width was 0.7 μm, and the read track width was 0.4 μm.

  The processing of the TMR element portion was performed by a photoresist process and a milling process using i-line. The photoresist curing process at the time of producing the coil portion of the write head portion was performed by maintaining the temperature at 250 ° C. for 2 hours.

Since the magnetization direction of the pinned layer and the pinned layer that should originally face the element height direction is rotated by this process and does not operate correctly as a magnetoresistive effect element, after the production of the reproducing head part and the recording head part is completed Magnetizing heat treatment was performed for 1 hour in a magnetic field at a temperature of 200 ° C. and 4.0 × 10 ⁴ A / m. The rotation of the easy axis of the free layer in the magnetization direction by this magnetization heat treatment was hardly observed from the magnetization curve.

The coercive force of the medium was 2.4 × 10 ⁵ A / m, and MrT (product of residual magnetization and film thickness) was 0.35 emu / cm ² . Reproduction output, (S / N) ratio, and effective track width were measured using 10 prototyped heads.

  Tables 3 to 8 show the measurement results of the heads having the structures shown in FIGS. 7, 18, 28, 34, 46 and 61, respectively.

  In any of the structures shown in FIGS. 7, 18, 28, 34, 46, and 61, the (S / N) ratio is 25 dB or more, which is greatly improved as compared with the conventional example. Understand. This is because, in any structure, the sense current can be prevented from bypassing the barrier layer, so that a sufficient output can be obtained, and an appropriate amount of the longitudinal bias magnetic field is applied to the free layer. This is because, as a result of success, noise could be suppressed sufficiently low and a good (S / N) ratio could be obtained. Among the magnetoresistive heads shown in FIGS. 7, 18, 28, 34, 46 and 61, the magnetoresistive head shown in FIG. In the magnetoresistive head shown in FIG. 61, the magnetic layer 8, the third nonmagnetic layer 13, and the second magnetic layer 12 have a laminated antiferromagnetic layer structure. This is probably because the reproduction effective track width is determined only by the width of the free layer 3b without being affected by the leakage magnetic field from the medium.

It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive head based on 1st Example of this invention. FIG. 6 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, showing a step subsequent to FIG. 1. FIG. 6 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, showing the next step of FIG. 2. FIG. 4 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the present example and showing the next step of FIG. 3. FIG. 6 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, showing the next step of FIG. 4. FIG. 6 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, showing the next step of FIG. 5. FIG. 7 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, showing the next step of FIG. 6. It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the other modification of a present Example. It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive head based on 2nd Example of this invention. FIG. 11 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, showing the next step of FIG. 10. FIG. 12 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and showing a step subsequent to FIG. 11. FIG. 13 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, showing the next process of FIG. 12. FIG. 14 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, showing the next step of FIG. 13. FIG. 15 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and showing the next process of FIG. 14. FIG. 16 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and showing the next process of FIG. 15. FIG. 17 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, showing the next process of FIG. 16. FIG. 18 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and showing a step subsequent to FIG. 17. It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive head based on the 3rd Example of this invention. FIG. 20 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and is a figure showing a step subsequent to FIG. 19. FIG. 21 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and showing a step subsequent to FIG. 20. FIG. 22 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the example, showing the next process of FIG. 21. FIG. 23 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the example, and is a figure showing a step subsequent to FIG. 22. FIG. 24 is a partial cross-sectional view showing the method for manufacturing the magnetoresistive head according to the example, and is a figure showing a step subsequent to FIG. 23; FIG. 25 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and is a figure showing a step subsequent to FIG. 24. It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive head based on the 4th Example of this invention. FIG. 27 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 26; FIG. 28 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 27; It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the other modification of a present Example. It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive effect head based on the 5th Example of this invention. FIG. 32 is a partial cross-sectional view showing the method for manufacturing the magnetoresistive head according to the example, and showing a process subsequent to FIG. 31. FIG. 33 is a partial cross-sectional view showing the method for manufacturing the magnetoresistive head according to the example, and is a figure showing a step subsequent to FIG. 32. FIG. 34 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 33; It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive effect head based on the 6th Example of this invention. FIG. 36 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and is a figure showing a step subsequent to FIG. 35. FIG. 37 is a partial cross-sectional view showing the method for manufacturing the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 36. FIG. 38 is a partial cross-sectional view showing the method for manufacturing the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 37. FIG. 39 is a partial cross-sectional view showing the manufacturing method of the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 38; It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive effect head based on the 7th Example of this invention. FIG. 41 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the example, and showing a process subsequent to FIG. 40. FIG. 42 is a partial cross-sectional view showing the method for manufacturing the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 41. FIG. 43 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and showing a process subsequent to FIG. 42. FIG. 44 is a partial cross-sectional view showing the method for manufacturing the magnetoresistive head according to the example, and showing a process subsequent to FIG. 43. FIG. 45 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the example, showing the next process of FIG. 44. FIG. 46 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and showing a process subsequent to FIG. 45. It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the other modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive head which concerns on the further another modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive head which concerns on the further another modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive head which concerns on the further another modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive head which concerns on the further another modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive head which concerns on the further another modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive head which concerns on the further another modification of a present Example. It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive effect head based on the 8th Example of this invention. FIG. 56 is a partial cross-sectional view showing the method of manufacturing the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 55. FIG. 57 is a partial cross-sectional view showing the method for manufacturing the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 56; FIG. 58 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and is a figure showing a step subsequent to FIG. 57; FIG. 59 is a partial cross-sectional view showing the method for manufacturing the magnetoresistance effect head according to the example, and is a figure showing a step subsequent to FIG. 58; FIG. 60 is a partial cross-sectional view showing the method for manufacturing the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 59; FIG. 63 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 60; It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the other modification of a present Example. It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive head based on the 9th Example of this invention. FIG. 67 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 64; FIG. 66 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the example, showing the process subsequent to FIG. 65; FIG. 67 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the example, showing the process subsequent to FIG. 66; It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive effect head based on the 10th Example of this invention. FIG. 69 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the example, showing the process subsequent to FIG. 68; FIG. 70 is a partial cross-sectional view showing the method for manufacturing the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 69; FIG. 71 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the example, and showing the next process of FIG. 70; FIG. 72 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the example, showing the process subsequent to FIG. 71; FIG. 73 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 72; It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the modification of a present Example. It is a fragmentary sectional view showing a method for manufacturing a magnetoresistive head according to an eleventh embodiment of the present invention. FIG. 76 is a partial cross-sectional view showing the manufacturing method of the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 75; FIG. 77 is a partial cross-sectional view showing the manufacturing method of the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 76; FIG. 78 is a partial cross-sectional view showing the manufacturing method of the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 77; FIG. 79 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 78; FIG. 80 is a partial cross-sectional view showing the manufacturing method of the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 79; FIG. 81 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 80; FIG. 82 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the example, and showing the next process of FIG. 81. FIG. 83 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 82; FIG. 84 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present embodiment, which is a view showing a step subsequent to FIG. 83; It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the other modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive head which concerns on the further another modification of a present Example. It is a fragmentary sectional view which shows the manufacturing method of the magnetoresistive effect head based on the 12th Example of this invention. FIG. 89 is a partial cross-sectional view showing the manufacturing method of the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 88; FIG. 90 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 89; FIG. 91 is a partial cross-sectional view showing the manufacturing method of the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 90; It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the other modification of a present Example. It is a fragmentary sectional view showing a method for manufacturing a magnetoresistive head according to a thirteenth embodiment of the present invention. FIG. 95 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and showing a step subsequent to FIG. 94. FIG. 96 is a partial cross-sectional view showing the manufacturing method of the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 95; FIG. 97 is a partial cross-sectional view showing the method of manufacturing the magnetoresistive head according to the example, and showing a step subsequent to FIG. 96. FIG. 98 is a partial cross-sectional view showing the manufacturing method of the magnetoresistance effect head according to the example, and showing a process subsequent to FIG. 97; FIG. 99 is a partial cross-sectional view showing the manufacturing method of the magnetoresistive head according to the present example, and is a figure showing a step subsequent to FIG. 98; It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the modification of a present Example. It is a fragmentary sectional view which shows the structure of the magnetoresistive effect head which concerns on the other modification of a present Example. It is a perspective view which shows the structure of the magnetic recording / reproducing head based on the 14th Example of this invention. It is a schematic diagram which shows the structure of the magnetoresistive conversion system which concerns on a present Example. 1 is a block diagram showing a configuration of a magnetic recording system according to an embodiment. 1 is a perspective view illustrating a configuration of a magnetic recording system according to an embodiment. It is a fragmentary sectional view which shows the structure of the conventional magnetoresistive effect head. It is a fragmentary sectional view which shows the structure of the conventional magnetoresistive effect head. It is a fragmentary sectional view which shows the structure of the conventional magnetoresistive effect head.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1; Lower conductive layer 1a: Concave part 2a; 2 Longitudinal bias layer underlayer 2b; Longitudinal bias layer 3a; Free layer underlayer 3b; Free layer 4; Nonmagnetic layer 5; Fixed layer 6a; Fixed layer 7; upper layer 8a; magnetic underlayer 8b; first magnetic layer 9; second nonmagnetic layer 11, 11b; insulating layer 11a; recess 12; second magnetic layer 13; Magnetic layer 15; Upper conductive layer 16; Lower shield layer 17; Upper shield layer 18; Fourth nonmagnetic layer 19; Second free layer 20; Photoresist 20a; Opening 21; Photoresist 21a; Photoresist 25; fifth nonmagnetic layer 26; second pinned layer 27; second pinned layer 29a, 29b, 29c, 29d, 29e, 29f; pattern 30 to 39; magnetoresistive effect element 41; coil 42 Base 43; magnetism 44; upper magnetic pole 45; reproducing head 46; recording head 50; recording head 51; reproducing head 52; substrate also serving as a head slider 53; recording medium 54; leakage magnetic field from medium 61 to 69; magnetoresistive head 101; Actuator 102; magnetic recording medium 103; magnetic recording / reproducing head 104; suspension 105; arm 107; sense current detecting means 108; controller 106; first actuator 129; substrate 130; recording / reproducing element section (magnetic recording / reproducing head)
131a; electrode terminal connected to the recording element unit (recording head) 131b; electrode terminal connected to the reproducing element unit (reproducing head) 132; protective film 133; current drive circuit 134; current for passing a sense current to the reproducing element unit Generation circuit 135; data reading circuit

Claims (17)

A lower conductive layer, a fixed layer provided on the lower conductive layer and having a fixed magnetization direction, a first nonmagnetic layer provided on the fixed layer, and provided on the first nonmagnetic layer A free layer whose magnetization direction is changed by an applied magnetic field, a first magnetic layer provided on the free layer and magnetically coupled to the free layer, and provided on the first magnetic layer. A second magnetic layer that is magnetically coupled to the first magnetic layer, and a longitudinal bias layer that applies a magnetic field to the first and second magnetic layers. A magnetoresistive effect element, wherein a sense current for detecting a change in resistance value flows substantially perpendicularly to the first nonmagnetic layer. 2. The magnetoresistive element according to claim 1, wherein the first magnetic layer has a length in a magnetic field direction applied by the longitudinal bias layer that is equal to or longer than a length of the free layer. 3. The magnetoresistive element according to claim 1, wherein a length of the second magnetic layer in a magnetic field direction applied by the longitudinal bias layer is equal to or longer than a length of the free layer. 4. The magnetoresistive effect according to claim 1, wherein a fixed layer that fixes a magnetization direction of the fixed layer is provided between the lower conductive layer and the fixed layer. 5. element. 5. The magnetoresistive effect element according to claim 1, wherein a second nonmagnetic layer is provided between the free layer and the first magnetic layer. 6. 6. The magnetoresistive element according to claim 1, wherein a third nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. 7. . 7. The magnetoresistive effect element according to claim 6, wherein the three-layer film including the first magnetic layer, the third nonmagnetic layer, and the second magnetic layer is a laminated antiferromagnetic material. . The magnetic coupling between the free layer and the first magnetic layer is an antiferromagnetic coupling or a ferromagnetic coupling, according to any one of claims 1 to 7. The magnetoresistive effect element as described. 9. The magnetic coupling between the first magnetic layer and the second magnetic layer is an antiferromagnetic coupling or a ferromagnetic coupling. The magnetoresistive effect element according to item 1. 10. The product of saturation magnetization and film thickness in the first magnetic layer is substantially equal to the product of saturation magnetization and film thickness in the second magnetic layer. The magnetoresistive effect element according to item 1. The magnetoresistive effect element according to any one of claims 1 to 10, wherein at least a part of the first magnetic layer is in direct contact with the longitudinal bias layer. 12. The magnetoresistive element according to claim 1, wherein at least a part of the second magnetic layer is in direct contact with the longitudinal bias layer. The magnetoresistive effect element according to any one of claims 1 to 12, a lower shield layer serving as a base material of the magnetoresistive effect element, and the magnetoresistive effect element provided on the magnetoresistive effect element. A magnetoresistive head having an upper conductive layer for inputting a sense current for detecting a change in electric resistance value of the magnetoresistive effect element, and an upper shield layer provided on the upper conductive layer. 14. The magnetoresistive head according to claim 13, wherein a lower conductive layer in the magnetoresistive element is integral with the lower shield layer. 15. The magnetoresistive head according to claim 13, wherein the upper conductive layer is integral with the upper shield layer. 16. The magnetoresistive head according to claim 13, a current generation circuit that supplies a sense current to the magnetoresistive head, and a change in electrical resistance of the magnetoresistive head to detect the magnetic resistance. And a data reading circuit for obtaining a magnetic field applied to the resistance effect head. 17. The magnetoresistive conversion system according to claim 16, a magnetic recording medium having a plurality of tracks for recording and reproducing data by the magnetoresistive conversion system, and a position where a selected track is arranged in the magnetic recording medium A magnetic recording system comprising: a first actuator that moves the magnetoresistive conversion system to a second actuator; and a second actuator that rotationally drives the track.

Images