JP2002141583A - Magnetoresistive effect element, reproducing head, and recording/reproducing system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetoresistive effect head in which the magnetic domain of a free layer can be controlled by applying a large longitudinal bias thereto, hysteresis is reduced on the R-H loop, and a reproduced signal having reduced noise can be obtained even when magnetic information on a magnetic medium is reproduced. SOLUTION: In a shield magnetoresistive effect element employing a tunnel junction element having a basic structure of free layer/nonmagnetic layer/fixed layer as the magnetoresistive effect element, a longitudinal bias layer coming into contact with the free layer at least partially is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensor for reading an information signal recorded on a magnetic medium.

[0002]

The prior art discloses magnetic read transducers called magnetoresistive (MR) sensors or heads, which have been found to read data from magnetic surfaces with a large linear density.

[0003] MR sensors detect magnetic field signals via a change in resistance as a function of the strength and direction of the magnetic flux sensed by the reading element. Such prior art MR sensors include an anisotropic magnetoresistance (AMR) in which one component of the resistance of the read element changes in proportion to the cosine of the angle between the direction of magnetization and the direction of the sense current flowing through the element. ) Work based on the effect.

A more detailed description of the AMR effect can be found in D.S. A.
Thompson et al., "Memory, St.
orage, and Related Applications "IEEE Trans. on M
ag.MAG-11, p. 1039 (1975).

In a magnetic head using the AMR effect, a vertical bias is often applied in order to suppress Barkhausen noise.
An antiferromagnetic material such as n, NiMn, or nickel oxide may be used.

More recently, the change in resistance of a laminated magnetic sensor has been attributed to the spin-dependent transmission of electrical conductors between the magnetic layers through the non-magnetic layer and the associated spin-dependent scattering at the layer interface. A pronounced magnetoresistance effect is described.

This magnetoresistance effect is called by various names such as “giant magnetoresistance effect” and “spin valve effect”. Such a magnetoresistive sensor is made of a suitable material and has improved sensitivity and greater resistance change than observed with a sensor utilizing the AMR effect.

In this type of MR sensor, the in-plane resistance between a pair of ferromagnetic layers separated by a nonmagnetic layer changes in proportion to the cosine of the angle between the magnetization directions of the two layers.

Japanese Patent Application Laid-Open No. 2-61572, which has priority claim in June 1988, describes a laminated magnetic structure which provides a high MR change caused by antiparallel alignment of magnetization in a magnetic layer.

As the materials usable in the laminated structure, the above specification includes ferromagnetic transition metals and alloys.
It also discloses a structure in which a pinning layer is added to one of at least two ferromagnetic layers separated by an intermediate layer, and FeMn is suitable as a pinning layer.

Japanese Patent Application Laid-Open No. 4-358310, which has priority claim on December 11, 1990, has two ferromagnetic thin film layers separated by a non-magnetic metal thin film layer. When the applied magnetic field is zero, the magnetization directions of the two ferromagnetic thin film layers are orthogonal, and the resistance between the two non-coupled ferromagnetic layers changes in proportion to the cosine of the angle between the magnetization directions of the two layers. An MR sensor is disclosed that is independent of the direction of current flow through the sensor.

On the other hand, Japanese Patent Application Laid-Open No. Hei 4-103014, filed on Aug. 22, 1990, discloses at least a ferromagnetic tunnel junction device in which another intermediate layer is inserted into a ferromagnetic multilayer film. There is a description of a ferromagnetic tunnel effect film characterized in that a bias magnetic field from an antiferromagnetic material is applied to one ferromagnetic layer.

In a read head using a ferromagnetic tunnel junction, a layer for controlling the magnetic domain of the free layer (longitudinal bias layer)
The structure which does not contact the free layer is described in
Japanese Patent Laid-Open No. 10-16, which is claimed on January 27
No. 2327 has a description.

A spin valve is used as a magnetoresistive element.
A CPP-MR (MR in which a current flows perpendicular to the film surface) element, in which the layer controlling the magnetic domain of the free layer (longitudinal bias layer) does not contact the free layer, was filed on May 24, 1996. Yes, USP. No. 5,668,688.

[0015]

Conventionally, as a shield type magnetoresistive element using a ferromagnetic tunnel junction, a structure in which a vertical bias layer does not directly contact a free layer has been proposed.

This is because, in a shield type device using a ferromagnetic tunnel junction, a sense current needs to flow perpendicularly to the tunnel junction. The object of the present invention is to solve the problem that a sense current flows through a vertical bias portion having a lower resistance value in the vicinity of the junction, bypassing the junction, and does not contribute to detection of a resistance change.

FIG. 11 is a structural conceptual view of a conventional ferromagnetic tunnel head described in Japanese Patent Application Laid-Open No. 10-162327. For a patterned ferromagnetic tunnel junction device,
It describes that a vertical bias layer is arranged via an insulating layer.

A spin valve is used as a magnetoresistive element.
In CPP-MR, although the resistance of the non-magnetic part is not as large as that of a ferromagnetic tunnel junction, it has been pointed out that the sense current also bypasses the low-resistance vertical bias part by a small amount. It is described that a vertical bias layer is arranged via an insulating layer with respect to the formed spin valve element (US Pat. No. 5,668,688).

However, in this method, a sufficiently large vertical bias is applied to the free layer because the insulating layer located between the vertical bias layer and the free layer also functions as a magnetic separation layer. Therefore, since the magnetic domain of the free layer is not sufficiently controlled, the shield type sensor has a large hysteresis on the RH loop. It was a signal.

FIG. 12 shows a normalized longitudinal bias magnetic field obtained by a three-dimensional magnetic field analysis simulation. As a model of the magnetic field analysis, a structure as shown in FIG. 13 was used, and how much the end of the longitudinal bias deviated from the end of the MR element was calculated as a parameter. The value of the vertical bias is a value normalized by a value when there is no displacement of the end.

As can be seen at a glance, the larger the deviation of the end is, the smaller the value of X is, especially, the smaller the vertical bias end is.
It can be seen that the lowering of the vertical bias is large near the end.

It has been confirmed from simulation that the vertical bias is not sufficiently applied when the end of the vertical bias is away from the end of the magnetic layer.

In addition, JP-A-10-4227, JP-A-10-190090 and JP-A-10-162
No. 326 discloses a junction magnetic field sensor using a magnetic tunnel junction element. However, none of the known examples discloses or suggests a technique using a vertical bias layer. In Japanese Patent Application Laid-Open No. H10-264, there is described a junction magnetic field sensor using a magnetic tunnel junction element including a vertical bias layer. However, there is no description regarding a technique of connecting the vertical bias layer to a free layer for use.

Accordingly, an object of the present invention is to improve the above-mentioned drawbacks of the prior art, to reduce the noise of the reproduced waveform, to improve the S / N ratio and the bit error rate, and to improve the magnetoresistive effect head. , And a recording / reproducing system easily and economically.

[0025]

In order to achieve the above-mentioned object, the present invention employs the following basic technical structure. That is, in a shielded magneto-resistance effect element using a tunnel junction element having a basic configuration of a free layer / non-magnetic layer / fixed layer as a magneto-resistance effect element, a vertical bias layer that contacts at least a part of the free layer is provided. A magnetoresistive effect element and a magnetoresistive effect head or a magnetoresistive detection system using the magnetoresistive effect element having such a basic configuration.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of the magnetoresistive element according to the present invention will be described in more detail. A shield type magnetoresistive element using a tunnel junction element having a basic structure of a free layer / barrier layer / fixed layer. In the effect element, at least a part of the free layer is in contact with the vertical bias.

The magnetoresistive film according to the present invention has a basic structure in which ferromagnetic layers and conductive nonmagnetic layers are alternately laminated, and all of the sense current for detecting a change in magnetoresistance is a metal. In the magnetoresistive element that passes through the nonmagnetic layer, a free layer vertical bias layer that contacts at least a part of at least one of the ferromagnetic layers is provided.

This solves the problem that the vertical bias is not applied to the free layer. However, merely contact between the vertical bias and the free layer may cause the sense current to flow through the vertical bias portion and not flow through the essential ferromagnetic tunnel junction or the conductive non-magnetic layer.

Further, in the present invention, in order for a vertical bias to be properly applied to the free layer and for a sense current not to bypass the vertical bias portion but to flow properly through the ferromagnetic tunnel junction element portion, It is considered effective to use a structure based on seven types of structures as described below.

In the present invention, the barrier layer and the conductive non-magnetic layer are collectively called a non-magnetic layer.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The construction of a specific example of a magnetoresistive head according to the present invention will be described in detail with reference to the drawings.

FIG. 1 is a sectional view schematically showing the basic structure of the magnetoresistive head according to the present invention. In FIG. 1, a free layer 6 / non-magnetic layer 5 / Tunnel junction element 20 having fixed layer 4 as a basic configuration
In the shield type magnetoresistive element 30 using the method, the magnetoresistive element 30 provided with the vertical bias layer 7 in contact with at least a part of the free layer 6 is shown.

That is, as a first specific example according to the present invention, as shown in FIG. 1, a conceptual diagram of a cross section when the shield type sensor section is cut in parallel to the ABS plane is shown.

In this configuration, the lower shield layer 1,
A lower electrode layer 2, a fixed layer 3, a fixed layer 4, a nonmagnetic layer 5, and a free layer 6 are sequentially laminated.

A vertical bias layer 7 and an insulating layer 8 patterned as shown in FIG. 1 are laminated thereon.

An upper electrode layer 9 and an upper shield layer 10 are further laminated thereon. Fixed layer 3 / fixed layer 4 formed on the lower electrode portion via a base layer (not shown)
/ Nonmagnetic layer 5 / Free layer 6 is the magnetoresistive film 20
It constitutes.

In this structure, if a current flows from the upper electrode to the lower electrode in the figure, the current passes between the insulating layers disposed on the left and right from the upper electrode, and the free layer 6, the nonmagnetic layer 5,
The lower electrode layer 2 passes through the fixing layer 4, the fixing layer 3, and the underlayer.
Flows to At this time, since the vertical bias layer 7 is insulated from the current flow, it does not affect the current flow.

Further, since the vertical bias layer 7 is directly laminated on the free layer 6, the vertical bias 7 is
Will be sufficiently applied. Therefore, by using this structure, it is possible to achieve both a proper flow of the sense current through the nonmagnetic layer portion and a proper application of the vertical bias 7 to the free layer 6.

The non-magnetic layer in this embodiment forms the barrier layer as described above.

Here, the lower electrode layer 2 is formed on the lower shield layer 1.
Are described, and the upper shield layer 10 is laminated on the upper electrode layer 9, but the lower shield layer 1 and the lower electrode layer 2
, Or between the upper electrode layer 9 and the upper shield layer 10 as a lower gap layer. In addition, the lower shield layer 1 and the lower electrode layer 2 and the upper electrode layer 9 and the upper shield layer 10 can be shared.

Between the antiferromagnetic layer constituting the fixed layer 3 and the lower electrode layer 2, although not particularly shown, an appropriate underlayer, between the free layer 6 and the upper electrode layer 9. May be provided with an appropriate upper layer.

The magnetoresistive element according to the present invention has a basic structure in which a ferromagnetic layer and a nonmagnetic layer are alternately laminated as a magnetoresistive film, and is used for detecting a change in magnetoresistance. Of the at least one selected one of the ferromagnetic layers in the magnetoresistive element configured so that all of the sense currents pass through the nonmagnetic layer.
There is also provided a vertical bias layer that contacts the portion.

That is, in this specific example, the ferromagnetic layer includes at least the free layer 6 and the fixed layer 4, and for example, includes a ferromagnetic layer corresponding to the free layer 6. The vertical bias layer 7 is selected to be in contact with the vertical bias layer 7.

The structure of the magnetoresistive element 30 according to the present invention will be described in more detail. The magnetoresistive film 20 has a free layer 6 and a nonmagnetic layer 5 has a barrier layer.
In the magnetoresistive element 20 having the basic configuration in which the fixed layer 4 is laminated and all of the sense current for detecting the magnetoresistance change passes through the nonmagnetic layer 5, the free layer 6
This is a magnetoresistive element provided with a longitudinal bias layer 7 having a function of controlling the magnetic domain of the free layer 6 in contact with at least a part of the magnetoresistance effect element.

Next, the structure of a magnetoresistive head 30 using the magnetoresistive element 30 according to another embodiment of the present invention will be described with reference to FIG.

That is, the magnetoresistance effect element 3 according to the present invention
In the second specific example, the lower shield layer 1 formed on the base, the lower electrode layer 2 formed at least in part on the lower shield or serving also as the lower shield, A ferromagnetic tunnel junction film 20 which is formed on the electrode layer 2 and has a fixed layer 3 / fixed layer 4 / non-magnetic layer 5 / free layer 6 as a basic structure; Formed on the vertical bias layer 7 having a pattern, on the free layer 6 and on the insulating layer 8 having a predetermined pattern on the vertical bias layer 7 and on the free layer 6 And a top electrode layer 9 formed so as to be in contact with the free layer 6 and the insulating layer 8 but not to be in contact with the vertical bias layer 7.

In this example, the upper electrode layer 9 is
The upper shield 10 may also be used, or the upper shield layer 10 may be further provided on the upper electrode layer 9.

Further, in this specific example, it is desirable that the vertical bias layer 7 and the insulating layer 8 are patterned so as to have a narrower width than the free layer 6 when viewed from the ABS. .

In another embodiment of the magnetoresistive head according to the present invention, the lower shield layer 1 formed on the base and at least a part thereof is formed on the lower shield or shared with the lower shield. Lower electrode layer 2 and fixed layer 3 / fixed layer 4 / conductive magnetic layer 5 formed on lower electrode layer 2
A magnetoresistive effect film 20 having a basic configuration of a free layer 6;
A vertical bias layer 7 formed on the free layer 6 and disposed with a predetermined pattern, and disposed on the free layer 6 and the vertical bias layer 7 with a predetermined pattern. Formed on the insulating layer 8 and the free layer 6;
The magnetoresistive head 30 includes an upper electrode layer 9 formed so as to be in contact with the free layer 6 and the insulating layer 8 but not to be in contact with the vertical bias layer 7.

In the above embodiment, as described above, the upper electrode layer 9 may also serve as an upper shield, or an upper shield layer 10 may be further provided on the upper electrode layer 9.

Further, in this specific example, it is desirable that the vertical bias layer 7 and the insulating layer 8 are patterned so as to have a narrower width than the free layer 6 when viewed from the ABS. .

Next, a second specific example of the magnetoresistive head 30 according to the present invention will be described with reference to FIG.

That is, the magnetoresistive head has a lower electrode layer 2 formed on a base, a fixed layer 3 / fixed layer 4 / nonmagnetic layer 5 / free layer formed on the lower electrode layer 2. 6
A magnetoresistive effect film 20 having a basic configuration, an upper electrode layer 9 formed on the free layer 6 and having a smaller width than the free layer 6 arranged in a predetermined pattern;
A vertical bias layer 7 formed on the free layer 6 and arranged with a predetermined pattern, a part of which is also arranged on the upper electrode layer 9; Upper shield 10 formed on vertical bias layer 7
And a magnetoresistive effect head 30 composed of:

Specifically, as shown in FIG. 2, a conceptual diagram of a cross section when the shield type sensor section is cut in parallel to the ABS surface is shown.

In this configuration, the lower shield 1, the lower electrode layer 2, the fixed layer 3, the fixed layer 4, the nonmagnetic layer 5, and the free layer 6 are sequentially laminated on the base. The patterned upper electrode layer 9 is laminated thereon as shown in the figure.

Further, a vertical bias layer 7 and an upper shield layer 10 are laminated thereon.

The fixed layer / fixed layer / nonmagnetic layer / free layer constitutes the magnetoresistive film 20.

In this structure, if a current flows from the upper electrode to the lower electrode in the drawing, the current passes from the upper electrode to the free layer, the nonmagnetic layer, the fixed layer, and the fixed layer, and then to the lower electrode layer. And flows. At this time, the vertical bias layer does not affect the flow of the current.

Further, since the vertical bias layer 7 is directly laminated on the free layer 6, the vertical bias is sufficiently applied to the free layer. Therefore, by using this structure, it is possible to achieve both the flow of the sense current through the magnetoresistive film portion and the application of the vertical bias to the free layer.

Here, the structure in which the lower electrode 2 is laminated on the lower shield 1 and the upper shield 10 is laminated on the upper electrode 9 has been described, but the structure between the lower shield and the lower electrode or between the upper electrode and the upper shield is described. And an insulating layer as a lower gap layer.

Further, the lower shield and the lower electrode, and the upper electrode and the upper shield can be shared.

It is also possible to provide an underlayer between the antiferromagnetic layer and the lower electrode layer, and an upper layer between the free layer and the upper electrode layer.

As another mode in the above specific example, the lower shield layer 1 formed on the base and the lower electrode layer 2 formed at least in part on the lower shield or used also as the lower shield And a ferromagnetic tunnel junction film 20 having a basic structure of a fixed layer 3 / fixed layer 4 / conductive nonmagnetic layer 5 / free layer 6 formed on the lower electrode layer 2, and formed on the free layer 6. An upper electrode layer 9 having a width narrower than the free layer 6 arranged with a predetermined pattern, and formed on the free layer 6 and arranged with a predetermined pattern; A magnetoresistive element comprising a vertical bias layer 7 partially disposed on the upper electrode layer 9 and an upper shield 10 formed at least partially on the vertical bias layer 7. The effect head 30.

Next, a third specific example of the magnetoresistive head 30 according to the present invention will be described with reference to FIG.

That is, the lower shield layer 1 formed on the substrate
And a lower electrode layer 2 at least partially formed on the upper shield layer 1 or also serving as the lower shield layer, and formed on the lower electrode layer 2 and arranged with a predetermined pattern. The vertical bias layer 7, at least a part of which is the lower electrode layer 2
The free layer 6 is formed on the vertical bias layer 7 and the other portion is formed on the free layer 6, and the nonmagnetic layer 5 / fixed layer 4 / fixed on the free layer 6 A ferromagnetic tunnel junction film 20 having the layer 3 as a basic structure; and an insulating layer 8 formed on at least a part of the free layer 6 and patterned so as to be in contact with the ferromagnetic tunnel junction film 20. And an upper electrode layer 9 in contact with the fixed layer 4 and an upper shield formed at least in part on the upper electrode layer or serving also as the upper electrode layer. It is shown.

The third configuration of the magnetoresistive head 30 according to the present invention will be described in detail with reference to FIG.

That is, FIG.
FIG. 3 shows a conceptual diagram of a cross section when cut in parallel to a BS surface.

In this configuration, the lower shield layer 1 and the lower electrode layer 2 are laminated on the base. A free layer 6 and a non-magnetic layer 5 are stacked thereon. The fixed layer 4 / the layer 3 to be fixed / the upper electrode 5 are laminated on the non-magnetic layer 5 between the left and right vertical bias layers 7 and are patterned as shown in the figure.

An insulating layer 8 is disposed on the left and right sides of the patterned fixed layer / fixed layer / upper electrode. Further, the upper electrodes 9, 9 'and the upper shield layer 10 are laminated thereon.

The portion of the underlayer / fixed layer 3 / fixed layer 4 / nonmagnetic layer 5 / free layer 6 is the magnetoresistive film 20.
In this structure, if a current flows from the upper electrode to the lower electrode in the drawing, the current passes from the upper electrode 9 to the fixed layer 3, the fixed layer 4, the nonmagnetic layer 5, and the free layer 6. Flows into layer 2.

At this time, the vertical bias layer does not affect the current flow. In addition, the vertical bias layer 7 is a free layer 6
Since the vertical bias 7 is directly stacked thereon, the vertical bias 7 is sufficiently applied to the free layer 6.

Therefore, by using this structure, it is possible to achieve both the proper flow of the sense current through the magnetoresistive film portion and the proper application of the vertical bias 7 to the free layer 6.

Here, the structure in which the lower electrode 2 is laminated on the lower shield layer 1 and the upper shield 10 is laminated on the upper electrodes 9 and 9 'has been described. It is also possible to arrange an insulating layer as a lower gap layer between the electrode and the upper shield. In addition, the lower shield and the lower electrode, and the upper electrode and the upper shield can be shared. An underlayer may be provided between the lower electrode layer and the free layer, and an upper layer may be provided between the antiferromagnetic layer and the upper electrode layer.

As another specific example of the above-described magnetoresistive head 30 according to the present invention, a lower shield layer formed on a base and at least a part thereof is formed on the upper portion of the lower shield or is used as the lower shield A lower electrode layer, a vertical bias layer formed on the lower electrode layer and arranged with a predetermined pattern, at least a part of which is formed on the lower electrode layer and other portions A free layer formed on the vertical bias layer, a conductive non-magnetic layer / fixed layer / fixed layer formed on the free layer; An insulating layer formed on at least a part of the free layer and patterned to be in contact with the ferromagnetic tunnel junction film; and an upper electrode layer in contact with the fixed layer. Part is upper electrode layer Either formed on the shield after being combined with the upper electrode layer, the magnetoresistive head 30 consisting of
It is.

In the third embodiment according to the present invention, the magnetoresistive head 30 is viewed from above the head parallel to the ferromagnetic tunnel junction film or the magnetoresistive film 20. In the plan view, it is desirable that all of the upper electrodes 9 are formed above the lower electrodes 2.

FIG. 4 is a conceptual view of a cross section when the shield type sensor portion, which is a variation of FIG. 3, is cut in parallel to the ABS.

In FIG. 3, the free layer and the non-magnetic layer exist so as to be long overlying the vertical bias layer. However, in the case of this structure, the free layer and the non-magnetic layer end almost at the break of the vertical bias film.

In this structure, if a current flows from the upper electrode to the lower electrode in the drawing, the current passes from the upper electrode to the fixed layer, the fixed layer, the non-magnetic layer, and the free layer, and to the lower electrode layer. And flows.

At this time, the vertical bias layer does not affect the current flow. Further, since the vertical bias layer is directly stacked on the free layer, the vertical bias is sufficiently applied to the free layer.

Therefore, by using this structure, it is possible to achieve both a proper flow of the sense current through the magnetoresistive film portion and a proper application of the vertical bias to the free layer.

Further, the advantage of this structure is that the step between the vertical bias and the magnetoresistive film can be filled with the free layer and the vertical bias layer, and the element can be made flat.

Further, when the element surface is flat, the variation of the PR shape formed thereon is reduced, and as a result, the pattern shape can be formed with good reproducibility.

Here, the structure in which the lower electrode is laminated on the lower shield and the upper shield is laminated on the upper electrode has been described, but the structure between the lower shield and the lower electrode or between the upper electrode and the upper shield has been described. It is also possible to arrange an insulating layer as a lower gap layer.

Further, the lower shield and the lower electrode, and the upper electrode and the upper shield can be shared.

An underlayer is provided between the lower electrode layer and the free layer.
An upper layer can be provided between the antiferromagnetic layer and the upper electrode layer.

FIG. 5 is a conceptual diagram of a cross section when the shield type sensor portion, which is also a variation of FIG. 3, is cut parallel to the ABS.

The free layer and the nonmagnetic layer slightly overlap the upper part of the vertical bias layer, but have a structure that is cut off in the middle. In this method, characteristics comparable to those in FIG. 3 can be obtained.

FIG. 6 is also a variation of FIG. 3, in which the free layer and the nonmagnetic layer are patterned at almost the same positions as the pinned layer and the pinned layer.

Again, characteristics comparable to those of FIG. 3 can be obtained. Further, the configuration of a fourth specific example of the magnetoresistive head 30 according to the present invention will be described in detail with reference to FIG.

That is, FIG.
A conceptual diagram of a cross section when cut in parallel to the plane of the BS surface is shown. In the figure, a lower shield layer 1 formed on a base and at least a part thereof are formed on an upper portion of the lower shield layer 1 Or
A lower electrode layer 2 also serving as a lower shield layer 1; a free layer 6 formed on the lower electrode layer 2; and a vertical bias layer disposed on the free layer 6 with a predetermined pattern. 7 and the free layer 6 /
A ferromagnetic tunnel junction film or a magnetoresistive film 20 having a basic structure of a barrier layer 5 / fixed layer 4 / fixed layer 3 which is a non-magnetic layer, and at least a part of the free layer 6 and the vertical bias layer 7 An insulating layer 8 disposed thereon with a predetermined pattern, and an upper electrode layer 9 formed on the fixed layer 3 and at least partially in contact with the fixed layer 3
And an upper shield 10 which is formed at least partially on the upper electrode layer 9 or also serves as the upper electrode layer 9.

The above-described magnetoresistive head 30 according to the present invention will be described in more detail. As shown in FIG. 7, a lower shield 1, a lower electrode layer 2, and a free layer 6 are laminated on a substrate. . A patterned vertical bias layer 7 is laminated thereon as shown in the figure.

In the portion between the left and right vertical bias layers 7 on the free layer 6, a barrier layer 5, a fixed layer 4, a fixed layer 3, and an upper electrode layer 9, which are nonmagnetic layers, are laminated. And so on.

The portion of the underlayer / free layer 6 / barrier layer 5 as a nonmagnetic layer / fixed layer 4 / fixed layer 3 is a magnetoresistive film or a ferromagnetic tunnel junction film 20.

In this structure, if a current flows from the upper electrode to the lower electrode in the drawing, the current passes from the upper electrode to the fixed layer, the fixed layer, the non-magnetic layer, and the free layer, and to the lower electrode layer. And flows.

At this time, the vertical bias layer does not affect the current flow. Further, since the vertical bias layer is directly stacked on the free layer, the vertical bias is sufficiently applied to the free layer.

Therefore, by using this structure, it is possible to achieve both the flow of the sense current through the magnetoresistive film portion and the application of the vertical bias to the free layer.

Here, the structure in which the lower electrode is laminated on the lower shield has been described. However, it is also possible to arrange an insulating layer as a lower gap layer between the lower shield and the lower electrode. In addition, the lower shield and the lower electrode can be shared. An underlayer can be provided between the lower electrode layer and the free layer.

Further, the magnetoresistive head 30 according to the present invention
The configuration according to the fifth specific example will be described in detail with reference to FIG.

That is, FIG.
A conceptual diagram of a cross section when cut in parallel to the plane of the BS surface is shown. In the figure, a lower shield layer 1 formed on a base and at least a part thereof are formed on an upper portion of the lower shield layer 1 Or a lower electrode layer 2 also serving as the lower shield layer 1, and a ferromagnetic layer having a basic structure of a fixed layer 3, a fixed layer 4, a nonmagnetic layer 5, and a free layer 6 formed on the lower electrode layer 2. At least a part of the tunnel junction film or the magnetoresistive film 20 is in contact with the nonmagnetic layer 5, and another part is the free layer 6.
An insulating layer 8 in contact with the free layer 6, a vertical bias layer 7 formed on the insulating layer 8 and at least partially in contact with the free layer 6, and an at least partly in contact with the free layer 6. A magnetoresistive head 30 includes an electrode layer 9 and an upper shield 10 at least partially formed on the upper electrode layer 9 or used also as the upper electrode layer 9.

The above-described magnetoresistive head 30 according to the present invention will be described in more detail. As shown in FIG. 8, if the shield type sensor section is viewed in a cross section cut parallel to the ABS plane, Lower shield 1, lower electrode 2,
A fixed layer 3 made of an antiferromagnetic layer, a fixed layer 4, and a nonmagnetic layer 5 are sequentially laminated.

A free layer patterned as shown in the figure is laminated thereon. That is, the insulating layer 8 and the vertical bias layer 7 are arranged on the left and right of the free layer 6 such that the ends thereof are in contact with the free layer 6.

Further, an upper electrode layer 9 and an upper shield layer 10 are laminated thereon.

The portion of the underlayer / fixed layer 3 / fixed layer 4 / nonmagnetic layer 5 / free layer 6 not shown is a magnetoresistive film or a magnetoresistive film 20.

In this structure, if a current flows from the upper electrode to the lower electrode in the drawing, the current passes through the free layer, the non-magnetic layer, the fixed layer, and the layer to be fixed sequentially from the upper electrode to the lower electrode layer. Flows to At this time, since the vertical bias layer is electrically insulated from the layers below the fixed layer by the insulating layer and the nonmagnetic layer, it does not affect the flow of current.

Since the vertical bias layer is in contact with the free layer, the vertical bias is sufficiently applied to the free layer.

Therefore, by using this structure, it is possible to achieve both the proper flow of the sense current through the magnetoresistive film portion and the proper application of the vertical bias to the free layer.

Here, the structure in which the lower electrode is laminated on the lower shield and the upper shield is laminated on the upper electrode has been described, but the structure between the lower shield and the lower electrode or between the upper electrode and the upper shield has been described. It is also possible to arrange an insulating layer as a lower gap layer. In addition, the lower shield and the lower electrode, and the upper electrode and the upper shield can be shared.

An underlayer is provided between the lower electrode layer and the free layer.
An upper layer can be provided between the antiferromagnetic layer and the upper electrode layer. Although the case where only the free layer of the magnetoresistive effect film is patterned is shown here, it is sufficient that at least the free layer is patterned, and the extent to which the free layer is patterned is appropriately selected. Can be.

Next, the magnetoresistive head 3 according to the present invention will be described.
The configuration according to the sixth specific example of No. 0 will be described in detail with reference to FIG.

That is, FIG. 9 shows that the shield type sensor section is A
A conceptual diagram of a cross section when cut in parallel to the plane of the BS surface is shown. In the figure, a lower shield layer 1 formed on a base and at least a part thereof are formed on an upper portion of the lower shield layer 1 Or a lower electrode layer 2 also serving as the lower shield layer 1, and a ferromagnetic layer having a basic structure of a fixed layer 3, a fixed layer 4, a nonmagnetic layer 5, and a free layer 6 formed on the lower electrode layer 2. A tunnel junction film or a magnetoresistive film 20, an insulating layer 8 formed on the nonmagnetic layer 5 and partially in contact with the free layer 6, or via an interface control layer 11 or directly; A vertical bias layer 7 at least partially disposed on the free layer 6 and at least a part thereof
The upper electrode layer 9 which is in contact with the upper electrode layer 9 and an upper shield 10 which is formed at least partially on the upper electrode layer 9 or also serves as the upper electrode layer 9.
0 is shown.

The above-described magnetoresistive head 30 according to the present invention will be described in more detail. As shown in FIG. 9, a lower shield 1, a lower electrode 2, a fixing layer 3,
The fixed layer 4 and the nonmagnetic layer 5 are sequentially laminated.

On top of this, the free layer 6 / interface control layer 11 / longitudinal bias layer 7 patterned as shown in the figure are laminated.

The interface control layer 11 in this specific example is
Although it is electrically conductive, it has the function of controlling the magnetic field, and therefore, the conductivity between the free layer 6 and the vertical bias layer 7 can be ensured.

In the present invention, the vertical bias 7 is applied to the free layer 6 after the magnitude applied by the interface control layer 11 is controlled.

An insulating layer is disposed on the left and right sides of the free layer 6. Further, an upper electrode layer 9 and an upper shield layer 10 are laminated thereon.

The portion of the underlayer (not shown) / fixed layer 3 / fixed layer 4 / nonmagnetic layer 5 / free layer 6 is a magnetoresistive film or a ferromagnetic tunnel junction film.

In this structure, if a current flows from the upper electrode to the lower electrode in the figure, the current flows from the upper electrode to the vertical bias layer, the interface control layer, the free layer, the nonmagnetic layer, the fixed layer, and the fixed layer. Sequentially flow to the lower electrode layer. At this time, since the oxide vertical bias layer is an insulating layer, it does not affect the flow of current.

Since the vertical bias layer is in contact with the free layer, the vertical bias is sufficiently applied to the free layer. Therefore, by using this structure,
It is possible to achieve both the proper flow of the sense current through the magnetoresistive film and the proper application of the vertical bias to the free layer.

Here, the structure in which the lower electrode is laminated on the lower shield and the upper shield is laminated on the upper electrode has been described, but the structure between the lower shield and the lower electrode or between the upper electrode and the upper shield has been described. It is also possible to arrange an insulating layer as a lower gap layer.

Further, the lower shield and the lower electrode, and the upper electrode and the upper shield can be shared. An underlayer may be provided between the lower electrode layer and the free layer, and an upper layer may be provided between the antiferromagnetic layer and the upper electrode layer. If an appropriate material is selected for the longitudinal bias material, the interface control layer can be omitted.

Although the case where only the free layer of the magnetoresistive effect film is patterned is shown here, it is sufficient that at least the free layer is patterned, and the portion below the free layer is appropriately patterned. You can choose.

Next, the magnetoresistive head 3 according to the present invention will be described.
The configuration according to the seventh specific example of No. 0 will be described in detail with reference to FIG.

That is, FIG. 10 is a conceptual view of a cross section when the shield type sensor section is cut in parallel to the ABS surface. In FIG. 10, the lower shield layer 1 formed on the base and the lower shield layer 1 are shown. ,
A lower electrode layer 2 which is formed at least in part on the lower shield 1 or also serves as the lower shield 1;
Fixed layer 3 / fixed layer 4 / nonmagnetic layer 5 formed thereon
/ A ferromagnetic tunnel junction film or a magnetoresistive film 20 having a free layer 6 as a basic structure, at least a part of the free layer 6 is in contact with the nonmagnetic layer 5, and another part is a free layer 6
An oxide vertical bias layer 7 in contact with the upper electrode layer 9, at least a part of which is in contact with the free layer 6, and at least a part formed on the upper electrode layer 9, or
A magnetoresistive effect head 30 including an upper shield 10 which is also used as the upper shield 10 is shown.

The above-described magnetoresistive head 30 according to the present invention will be described in more detail. As shown in FIG. 10, the lower shield 1, the lower electrode 2, and the antiferromagnetic The layer 3, the fixed layer 4, and the nonmagnetic layer 5 are sequentially laminated.

On top of that, a free layer 6 patterned as shown in the figure is laminated. On the left and right sides of the free layer 6, an oxide vertical bias layer 7 is arranged such that the ends thereof are in contact with the free layer 6.

The oxide vertical bias layer has a function of an insulating layer.

Further, an upper electrode layer 9 and an upper shield layer 10 are laminated thereon.

Underlayer / Fixing Layer 3 Not Shown
The portion of / fixed layer 4 / nonmagnetic layer 5 / free layer 6 is a magnetoresistive film or a ferromagnetic tunnel junction film 20.

In this structure, if a current flows from the upper electrode to the lower electrode in the figure, the current passes through the free layer, the nonmagnetic layer, the fixed layer, and the layer to be fixed sequentially from the upper electrode to the lower electrode layer. Flows to At this time, since the oxide vertical bias layer is an insulating layer, it does not affect the flow of current.

Further, since the vertical bias layer is in contact with the free layer, the vertical bias is sufficiently applied to the free layer. Therefore, by using this structure,
It is possible to achieve both the proper flow of the sense current through the magnetoresistive film and the proper application of the vertical bias to the free layer.

Here, the structure in which the lower electrode is laminated on the lower shield and the upper shield is laminated on the upper electrode has been described, but the structure between the lower shield and the lower electrode or between the upper electrode and the upper shield has been described. It is also possible to arrange an insulating layer as a lower gap layer. In addition, the lower shield and the lower electrode, and the upper electrode and the upper shield can be shared.

A base layer is provided between the lower electrode layer and the free layer.
An upper layer can be provided between the antiferromagnetic layer and the upper electrode layer. Although the case where only the free layer of the magnetoresistive effect film is patterned is shown here, it is sufficient that at least the free layer is patterned, and the extent to which the free layer is patterned is appropriately selected. Can be.

FIGS. 14 to 20 show conceptual plan views of typical elements corresponding to the respective structures in the specific examples of FIGS. 1 to 10 described above. Here, a rectangular shape as viewed from above is shown as the vertical bias shape, but actually various shapes can be used.

That is, the plan views of FIGS. 14 to 20 are plan views of the magnetoresistive head according to the present invention as viewed from above, and show that the respective laminated structures are partially different. I have.

For example, the portion of the area A in FIG.
This indicates that the lower electrode layer portion is directly disposed below the shield layer 10. In the area B, the insulating layer 8 exists on the surface, and the nonmagnetic layer 5, the fixed layer 4, the fixed layer 3 , Lower electrode 2 and lower shield layer 1 are deposited in this order.

Similarly, in the area C, the outermost surface is constituted by the upper shield layer 10, and at the same time, the upper electrode layer 9, the insulating layer 8, the vertical bias layer 7, the free layer 6, the non-magnetic layer This means that the layer 5, the fixed layer 4, the fixed layer 3, the lower electrode 2, and the lower shield layer 1 are deposited in this order.

In the area D, the outermost surface is the upper shield layer 10.
And the lower electrode layer 9, free layer 6, nonmagnetic layer 5, fixed layer 4, fixed layer 3, lower electrode 2
And the lower shield layer 1 are deposited in this order.

Further, in the section E, the outermost surface is constituted by the upper shield layer 10, and at the same time, the upper electrode layer 9, the insulating layer 8, the nonmagnetic layer 5, the fixed layer 4, the fixed layer 3,
This means that the lower electrode 2 and the lower shield layer 1 are deposited in this order.

Hereinafter, the plan views of the structures of the respective heads shown in FIGS. 15 to 20 illustrate the same structure. The structures are different in each specific example. See the description of each figure.

Although the above-described magneto-resistance effect head according to the present invention has been described as a specific example constituting a shield type magneto-resistance effect head, the ferromagnetic tunnel junction film or magneto-resistance effect film according to the present invention is Needless to say, the present invention can be used for a yoke type magnetoresistive head, and can be easily diverted simply by changing the current flowing method in the magnetoresistive head according to a known method.

Further, as another embodiment according to the present invention,
A magnetoresistive sensor as shown in each of the above embodiments, means for generating a current through the magnetoresistive sensor, and means for detecting a change in resistivity of the magnetoresistive sensor as a function of the detected magnetic field. Resistance detection system,
In still another aspect, a magnetic storage medium having a plurality of tracks for recording data, a magnetic recording system for storing data on the magnetic storage medium,
0, and an actuator means coupled to the magnetic recording system and the magnetoresistive transducing system for moving the magnetic recording system and the magnetoresistive detecting system to a selected track of the magnetic storage medium. Magnetic storage system.

The materials which can be used for the various layers used in the present invention will be described below.

That is, as described above, at least seven types of specific examples can be used as the cross-sectional structure of the magnetoresistive head 30 according to the present invention. The details of each structure and the preparation procedure will be described below. Representative examples and materials used are described.

An example of application to a recording / reproducing head will also be described.

First, the following will describe the materials which can be commonly used as materials constituting each layer used in the above-mentioned seven types of concrete examples.

Base Altic, SiC, alumina, Altic / alumina, S
iC / alumina Lower shield layer NiFe, CoZr, or CoFeB, CoZrM
o, CoZrNb, CoZr, CoZrTa, CoH
f, CoTa, CoTaHf, CoNbHf, CoZr
Nb, CoHfPd, CoTaZrNb, CoZrMo
Ni alloy, FeAlSi, iron nitride material, MnZn ferrite, NiZn ferrite, MgZn ferrite, simple substance, multilayer film, and mixture Lower electrode Au, Ag, Cu, Mo, W, Y, Ti, Zr, Hf, V, Nb , Ta simple substance, multilayer film, and mixture Interface control layer Al oxide, Si oxide, aluminum nitride, silicon nitride, diamond-like carbon, Au, Ag, Cu, Mo,
Single electrode composed of W, Y, Ti, Zr, Hf, V, Nb, Ta, etc., multilayer film, and mixture Upper electrode layer Au, Ag, Cu, Mo, W, Y, Ti, Zr, Hf, V, Nb, Single element, multilayer, and mixture of Ta Upper shield layer NiFe, CoZr, or CoFeB, CoZrM
o, CoZrNb, CoZr, CoZrTa, CoH
f, CoTa, CoTaHf, CoNbHf, CoZr
Nb, CoHfPd, CoTaZrNb, CoZrMo
Ni alloy, FeAlSi, iron nitride-based material, MnZn ferrite, NiZn ferrite, MgZn ferrite, simple substance, multilayer film, and mixture Insulation layer Al oxide, Si oxide, aluminum nitride, silicon nitride, diamond-like carbon, simple substance Multilayer film and mixture Lower gap layer Simple substance, multilayer film and mixture of Al oxide, Si oxide, aluminum nitride, silicon nitride, and diamond-like carbon Upper gap layer Al oxide, Si oxide, aluminum nitride, silicon nitride , Diamond-like carbon simple substance, multilayer film, and mixture Upper layer Au, Ag, Cu, Mo, W, Y, Ti, Zr, Hf, V, Nb, Ta simple substance, multilayer film, and mixture Vertical bias layer CoCrPt, CoCr, CoPt, CoCrTa, F
eMn, NiMn, Ni oxide, NiCo oxide, Fe oxide, NiFe oxide, IrMn, PtMn, PtPdMn, R
Simple substance, multilayer film, and mixture of eMn, Co ferrite, and Ba ferrite

The following configuration can be used as an example of the configuration of the magnetoresistance effect film used in the magnetoresistance effect head according to the present invention.

That is, for example: base / underlayer / free layer / first MR enhanced layer / nonmagnetic layer / second MR enhanced layer / fixed layer / fixed layer /
Protective layer Base / underlayer / fixed layer / fixed layer / first MR enhanced layer / non-magnetic layer / second MR enhanced layer / free layer /
Protective layer Base / (underlayer / free layer / first MR enhanced layer /
Layer / substrate in which nonmagnetic layer / second MR enhancement layer / fixed layer / fixed layer / protective layer) is repeatedly laminated N times / (base layer / fixed layer / fixed layer / first MR enhanced layer / nonmagnetic layer / first layer) A layer in which 2MR enhance layer / free layer / protective layer) is repeatedly laminated N times. Base / underlayer / first fixed layer / first fixed layer / first M
R enhance layer / nonmagnetic layer / second MR enhance layer / free layer / third MR enhance layer / nonmagnetic layer / fourth MR enhance layer / second fixed layer / second fixed layer / protective layer Base / underlayer / ( Fixed layer / first MR enhanced layer / nonmagnetic layer / second MR enhanced layer / free layer / nonmagnetic layer /) repeated N times (N is 1 or more) / fixed layer / protective layer Base / underlayer / (Free layer / First MR enhanced layer /
Non-magnetic layer / second MR enhancement layer / fixed layer / non-magnetic layer /) repeated N times (N is 1 or more) / free layer / protective layer Base / underlayer / fixed layer / first MR enhanced layer / Nonmagnetic layer / Second MR enhance layer / Free layer / Protective layer Base / Underlayer / Free layer / First MR enhance layer / Nonmagnetic layer / Second MR enhance layer / Fixed layer / Protective layer

Further, as the underlayer used in the magnetoresistive head according to the present invention, a single layer film, a mixture film, or a multilayer film made of metal, oxide, or nitride can be used. It is.

More specifically, Ta, Hf, Zr, W, C
r, Ti, Mo, Pt, Ni, Ir, Cu, Ag, C
o, Zn, Ru, Rh, Re, Au, Os, Pd, N
A single-layer film, a mixture film, or a multi-layer film made of b, V and an oxide or nitride of these materials is used.

As additional elements, Ta, Hf, Zr, W,
Cr, Ti, Mo, Pt, Ni, Ir, Cu, Ag, C
o, Zn, Ru, Rh, Re, Au, Os, Pd, N
b and V can also be used.

The underlayer may not be used in some cases.

On the other hand, the free layer used in the magnetoresistive head according to the present invention includes NiFe,
CoFe, NiFeCo, FeCo, CoFeB, Co
ZrMo, CoZrNb, CoZr, CoZrTa, C
oHf, CoTa, CoTaHf, CoNbHf, Co
ZrNb, CoHfPd, CoTaZrNb, CoZr
A MoNi alloy or an amorphous magnetic material can be used.

Further, as candidates for the material of the non-magnetic layer used in the magneto-resistance effect head according to the present invention, the case where the magneto-resistance effect film is a ferromagnetic tunnel junction film and the case where the non-magnetic layer is conductive A candidate material differs in the case of a magnetoresistive film using a magnetic layer.

For example, as the nonmagnetic layer (barrier layer) of the ferromagnetic tunnel junction film, an oxide, a nitride, a mixture of an oxide and a nitride or a metal / oxide two-layer film, a metal / nitride two-layer film And a metal / (mixture of oxide and nitride) two-layer film.

In addition, Ti, V, Cr, Co, Cu, Zn,
Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, A
g, Hf, Ta, W, Re, Os, Ir, Pt, Au,
Si, Al, Ti, Ta, Pt, Ni, Co, Re, V
Of oxides and nitrides, multilayer films, mixtures thereof, or Ti, V, Cr, Co, Cu, Zn, Y, Z
r, Nb, Mo, Tc, Ru, Rh, Pd, Ag, H
f, Ta, W, Re, Os, Ir, Pt, Au, Si,
Stacked films of simple substances, multilayer films, and mixtures of oxides and nitrides of Al, Ti, Ta, Pt, Ni, Co, Re, and V are good candidates.

In the case of a magnetoresistive film using a conductive non-magnetic layer as the non-magnetic layer, Ti, V, Cr, Co, Cu, Zn,
Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, A
g, Hf, Ta, W, Re, Os, Ir, Pt, Au,
Si, Al, Ti, Ta, Pt, Ni, Co, Re, V
, V, C with Ti, V, C
r, Co, Cu, Zn, Y, Zr, Nb, Mo, Tc,
Ru, Rh, Pd, Ag, Hf, Ta, W, Re, O
s, Ir, Pt, Au, Si, Al, Ti, Ta, P
A single layer of t, Ni, Co, Re, and V, a multilayer film, and a laminated film with a mixture are promising candidates.

For the first and second MR enhancement layers, Co, NiFeCo, FeCo, etc., or CoFeB,
CoZrMo, CoZrNb, CoZr, CoZrT
a, CoHf, CoTa, CoTaHf, CoNbH
f, CoZrNb, CoHfPd, CoTaZrNb,
A CoZrMoNi alloy or an amorphous magnetic material is used. When the MR enhance layer is not used, the MR ratio is slightly reduced as compared with the case where the MR enhance layer is used, but the number of steps required for fabrication is reduced by not using the MR enhance layer.

As the fixed layer used in the present invention, NiFe, CoFe, NiFeCo, FeCo, C
oFeB, CoZrMo, CoZrNb, CoZr, C
oZrTa, CoHf, CoTa, CoTaHf, Co
NbHf, CoZrNb, CoHfPd, CoTaZr
Nb, CoZrMoNi alloy or amorphous magnetic material can be used.

Alternatively, Ti, V, Cr, C
o, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru,
Rh, Pd, Ag, Hf, Ta, W, Re, Os, I
r, Pt, Au, Si, Al, Ti, Ta, Pt, N
It is also possible to use a laminated film obtained by combining a simple substance, an alloy, or a laminated film composed of a group based on i, Co, Re, and V.

Co / Ru / Co, CoFe / Ru / Co
Fe, CoFeNi / Ru / CoFeNi, Co / Cr
/ Co, CoFe / Cr / CoFe, CoFeNi / C
r / CoFeNi is a strong candidate. The layers to be fixed include FeMn, NiMn, IrMn, RhMn, and Pt.
PdMn, ReMn, PtMn, PtCrMn, CrM
n, CrAl, TbCo, Ni oxide, Fe oxide, N
A mixture of i-oxide and Co oxide, a mixture of Ni oxide and Fe oxide, Ni oxide / Co oxide bilayer film, Ni oxide / Fe oxide bilayer film, CoCr, CoCrPt, Co
CrTa, PtCo, or the like can be used.

PtMn or Ti, V, C
r, Co, Cu, Zn, Y, Zr, Nb, Mo, Tc,
Ru, Rh, Pd, Ag, Hf, Ta, W, Re, O
Materials added with s, Ir, Pt, Au, Si, Al, Ti, and Ta are good candidates.

The protective layer may be an oxide, a nitride, a mixture of an oxide and a nitride, a metal / oxide two-layer film, a metal / nitride two-layer film, a metal / (oxide and a nitride). ), A two-layer film.

Ti, V, Cr, Co, Cu, Zn, Y,
Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, H
f, Ta, W, Re, Os, Ir, Pt, Au, Si,
Al, Ti, Ta, Pt, Ni, Co, Re, V oxides and nitrides alone, multilayers, mixtures, or these with Ti, V, Cr, Co, Cu, Zn, Y, Zr, N
b, Mo, Tc, Ru, Rh, Pd, Ag, Hf, T
a, W, Re, Os, Ir, Pt, Au, Si, Al,
Potential candidates include oxides and nitrides of Ti, Ta, Pt, Ni, Co, Re, and V, and single layers, multilayers, and mixtures thereof. In some cases, the protective layer is not used.

Next, a typical procedure for producing each head having the structure shown in FIGS. 1 to 10 will be described.

FIGS. 21A to 21H show an example of a procedure for producing a head having the structure shown in FIG.

A lower shield 1, a lower electrode 2, and a magnetoresistive film 20 are sequentially formed on a base. Stencil PR on it
Is formed, and after the vertical bias 7 and the insulating layer 8 are formed, lift-off is performed.

Further, after forming a PR and milling up to the nonmagnetic layer 5, an insulating layer 8 is formed.

After the lift-off, the insulating layer portion 8 was drilled until the lower electrode 2 was exposed, and the upper electrode 9 and the upper shield 1 were removed.
0 is formed.

FIGS. 22A to 22H show an example of a procedure for producing a head having the structure shown in FIG.

A lower shield 1, a lower electrode 2, and a magnetoresistive film 20 are sequentially formed on a base.

After forming a stencil PR thereon and milling up to the nonmagnetic layer 5, an insulating layer 8 is formed and lifted off.

After the PR is formed and the upper electrode 10 is formed, lift-off is performed. After forming the PR and forming the vertical bias 7 and the insulating layer 8, the lift-off is performed.

A hole is formed in the insulating layer portion 8 until the lower electrode 2 is exposed, and an upper shield 10 is formed.

On the other hand, FIGS. 23A to 23I show an example of a procedure for producing a head having the structure shown in FIG.

A lower shield 1 and a lower electrode 2 are sequentially formed on a base. A stencil PR is formed thereon, and a vertical bias 7 is formed, followed by lift-off.

Further, after the magnetoresistive film 20 and the upper electrode 9 were formed, PR was formed, and milling was performed up to the nonmagnetic layer.

Thereafter, an insulating layer 8 is formed and lifted off, and a hole is formed in the insulating layer 8 until the lower electrode 2 is exposed, thereby forming an upper shield 10.

The method of manufacturing the head having the structure shown in FIGS. 4 to 6 is based on the method shown in FIG.

FIGS. 24A to 24H show an example of a procedure for producing a head having the structure shown in FIG.

That is, the lower shield 1, the lower electrode 2,
The magnetoresistive film 20 and the upper electrode 9 are sequentially formed.

[0182] A stencil PR is formed thereon, and after milling to the free layer 6, PR is removed.

Further, after forming the PR and forming the vertical bias layer 7, the lift-off is performed. Further, an insulating layer 8 is formed,
The insulating layer 8 is removed by chemical mechanical polishing (CMP) until the upper electrode 9 is exposed. Further, a hole is formed in the insulating layer 8 until the lower electrode 2 is exposed.
0 is formed.

Next, FIGS. 25 (A) to 25 (H) show an example of a procedure for producing a head having the structure shown in FIG.

That is, the lower shield 1, the lower electrode 2, and the magnetoresistive film 20 are sequentially formed on the base. After forming a stencil PR thereon and milling to the non-magnetic layer 5, an insulating layer 8 and a vertical bias layer 7 are sequentially formed and lifted off.

Further, after forming a PR and milling up to the insulating layer 8, the PR is removed. A hole is formed in the insulating layer 8 until the lower electrode 2 is exposed, thereby forming the upper shield 10.

On the other hand, FIGS. 26A to 26F show an example of a procedure for producing a head having the structure shown in FIG.

That is, the lower shield 1, the lower electrode 2,
Magnetoresistance effect film 20, interface control layer 11, longitudinal bias layer 7
Are sequentially formed. After forming a stencil PR thereon and milling up to the nonmagnetic layer 5, an insulating layer 8 is formed and lifted off.

A hole is formed in the insulating layer 8 until the lower electrode 2 is exposed, and an upper electrode 9 and an upper shield 10 are formed.

The procedure for producing the magnetoresistive head structure shown in FIG. 10 is the same as that in the case of the structure shown in FIG. 25 shown in FIG.

Next, the production procedure of the present invention will be described in more detail with reference to FIGS. 27 to 28 in an element shape close to an actual trial production.

Here, the case of the structure corresponding to FIG. 3 will be described as an example.

Step 1: A lower shield is formed, and is patterned into a shape as shown in FIG. 27A by PR formation and milling or lift-off. (A range surrounded by a thick line in the drawing is a range patterned in this step. The same applies to the following.)

Thereafter, a lower gap and a lower electrode are formed.

Step 2: The lower electrode is patterned by PR formation and milling as shown in FIG.

Step 3: A lift-off PR is formed as shown in FIG. 27C, a lower electrode thickening layer is formed, and lift-off is performed.

Step 4: A PR for patterning the vertical bias layer is formed, milled into a shape as shown in FIG. 27D, and after removing the PR, a TMR film and an upper electrode layer 1 are formed. .

Step 5: TM as shown in FIG.
A PR for patterning the R film is formed, and after the TMR film is milled to the barrier layer, the PR is removed.

Step 6: PR as shown in FIG.
Is formed, the barrier layer, the free layer, the underlayer, and the insulating layer are milled to remove the PR.

Step 7: As shown in FIG. 28A, a lift-off PR for the upper electrode 2 is formed, and after the upper electrode 2 is formed, lift-off is performed.

Step 8: As shown in FIG. 28B, an upper electrode thickening layer lift-off PR is formed, and after forming the thickening layer, lift-off is performed.

Step 9: As shown in FIG. 28C, an insulating thick layer lift-off PR is formed, and after the thick layer is formed, lift-off is performed.

Step 10: As shown in FIG. 28D, an upper gap layer is formed, a PR for forming an electrode hole is formed, and after milling until the electrode is exposed, the PR is removed.

Step 11: As shown in FIG. 28 (E), a recording head section is created.

Since the recording head may have any configuration, it is not shown in the drawing.

Next, after the substrate is cut into an appropriate size, the substrate is polished until the ABS surface is exposed as shown in the figure.

Although not shown in the drawing, the ABS surface is processed into an appropriate shape so as to take an optimal flight posture during head operation in a state where the device is assembled as a subsequent device, and is assembled into a suspension and wired. Ship.

Although only the structure shown in FIG. 3 has been described here, the structures shown in FIGS. 1, 2 and 7 to 10 can be formed in substantially the same steps. The outline is described in FIGS.

FIG. 29 is a cross-sectional view showing the configuration near the magnetoresistive element when the head after the step 11 shown in FIG. 28 is completed is cut in the vertical direction including the magnetoresistive element section.

Next, an example of application of the present invention to a recording / reproducing head and a recording / reproducing system will be described.

FIG. 30 is a conceptual diagram of a recording / reproducing head 50 to which the present invention is applied.

[0212] The head has a reproducing head 4 on a base 42.
5, a magnetic pole 43, a coil 41, an upper magnetic pole 44, and a recording head 46. At this time, the upper shield film and the lower magnetic film may be shared or provided separately.

The head 50 writes a signal on a recording medium and reads a signal from the recording medium. By forming the sensing portion of the reproducing head and the magnetic gap of the recording head in such a position that they are superimposed on the same slider, the same and the same rack can be positioned simultaneously. This head was processed into a slider and mounted on a magnetic recording / reproducing apparatus.

FIG. 31 is a conceptual diagram of a magnetic recording / reproducing apparatus 50 using the magnetoresistive element of the present invention.

On the substrate 52 also serving as a head slider,
A reproducing head 51 and a recording head 50 are formed, and are positioned on a recording medium 53 for reproduction.

The recording medium 53 rotates, and the head slider relatively moves on the recording medium 53 at a height of 0.2 μm or less or in a contact state.

With this mechanism, the reproducing head 51 is set at a position where the magnetic signal recorded on the recording medium 53 can be read from the leakage magnetic field 54.

Hereinafter, specific examples of manufacturing conditions of the magnetoresistive head according to the present invention will be described.

(1) In the case of a ferromagnetic tunnel junction head

First, for comparison, a head having the structure shown in FIG. 11 described in the conventional example was prepared. At this time, as the tunnel junction film, Ta (3 nm) / Pt46Mn54
(25 nm) / Co90Fe10 (5) / Ru (0.
9) / Co90Fe10 (5) / Al oxide (2 nm)
/ Co90Fe10 (2nm) / Ni82Fe18 /
(8) / Ta (3 nm) was used.

After the film formation, a heat treatment at 250 ° C. for 5 hours was performed while applying a magnetic field of 500 Oe in a direction orthogonal to the magnetic field at the time of film formation.

The following components were used as components constituting the head.

Substrate: 2 m thick Altic laminated with 10 μm of alumina Lower shield layer: 1 μm thick Co65Ni12Fe23
(The composition is at%, the same applies hereinafter.) Lower electrode layer: Ta (5 nm) / Au (60 nm) / Ta
(5 nm) Upper electrode layer: Ta (5 nm) / Au (60 nm) / Ta
(5 nm) Upper shield layer: 1 μm thick Co89Zr4Ta4Cr
3 Insulating layer: 20 nm thick alumina Vertical bias layer: Cr (10 nm) /Co74.5Cr1
0.5 Pt15 (3636 nm) Interface control layer: None Lower gap layer: None Upper gap layer: None Upper layer: None

This head was processed into a recording / reproduction integrated type head as shown in FIG. 30 and processed into a slider to record / reproduce data on / from a CoCrTa-based medium. At this time, the write track width was 3 μm, the write gap was 0.2 μm, and the read track width was 2 μm.

For processing the TMR element portion, a photoresist process using I-line and a milling process were used. The photoresist hardening process at the time of forming the coil portion of the write head was 250 ° C. for 2 hours.

In this step, the magnetization direction of the fixed layer and the fixed layer, which should originally be oriented in the element height direction, was rotated, and the device did not operate properly as a magnetoresistive effect element. After the completion of the formation, a magnetizing heat treatment was performed at 200 ° C. in a magnetic field of 500 Oe for 1 hour.

The rotation of the easy axis of the free layer in the magnetization direction due to the magnetization heat treatment was hardly observed from the magnetization curve.

The coercive force of the medium was 3.0 kOe, and MrT was 0.35 emu / cm ² . Using the prototype head, the reproduction output, S / N, mark length (frequency) at which the reproduction output was reduced by half, and bit error rate were measured.

The measurement results are shown below.

The reproduction output is as large as 3.1 mV, and the recording / reproduction frequency at which the reproduction output is reduced by half is not so bad.
N is as low as 21 dB, and the bit error rate is also 1 × 10 ^−3.
Was bad.

This is because Barkhausen noise is included in the reproduced signal. When the RH loop of the head was measured, the hysteresis of the magnetization reversal of the free layer was large and Barkhausen noise was generated due to the domain wall movement of the free layer. It became clear that he was doing.

In the structure shown in FIG. 11, since the vertical bias layer and the free layer are separated by the insulating layer, the vertical bias is not sufficiently applied to the free layer, and the vertical bias does not contribute to the reduction of Barkhausen noise. It was considered that it was.

Reproduction output: 3.1 mV Recording / reproduction frequency at which reproduction output is halved: 170 KFC S / N: 21 dB Bit error rate: 1 × 10 ^-3

Next, as an embodiment of the present invention, FIGS.
A head having a zero structure was prepared. 250 ° C after film formation,
Heat treatment for 5 hours in a direction perpendicular to the magnetic field during film formation
This was performed while applying a magnetic field of 0 Oe. The following components were used as components of the head.

Tunnel junction film: Ta (3 nm) / Pt4
6Mn54 (25 nm) / Co90Fe10 (5) / R
u (0.9) / Co90Fe10 (5) / Al oxide (2 nm) / Co90Fe10 (2 nm) / Ni82F
e18 / (8) / Ta (3 nm) Substrate: 10 μm alumina on 2 mm thick Altic
Laminated ones were used.

Lower shield layer: 1 μm thick Co65Ni
12Fe23 (composition is at%, the same applies hereinafter) Lower electrode layer: Ta (5 nm) / Au (60 nm) / Ta
(5 nm) Upper electrode layer: Ta (5 nm) / Au (60 nm) / Ta
(5 nm) Upper shield layer: 1 μm thick Co89Zr4Ta4Cr
3 Insulating layer: Alumina with a thickness of 20 nm Vertical bias layer: Cr (10 nm) /Co74.5Cr1
0.5 Pt15 (36 nm) (except for the configuration in FIG. 12), Ba ferrite (50 nm) (in the configuration in FIG. 10) Interface control layer: Cu (1.2 nm) (applicable only in the configuration in FIG. 9) Lower gap layer: None Upper gap layer: None Upper layer: None

This head was processed into a recording / reproducing integrated head as shown in FIG. 30 and processed into a slider to record and reproduce data on a CoCrTa-based medium. At this time, the write track width was 3 μm, the write gap was 0.2 μm, and the read track width was 2 μm. For processing the TMR element portion, a photoresist process using I-line and a milling process were used.

The photoresist curing step at the time of forming the coil portion of the write head was performed at 250 ° C. for 2 hours.

In this step, the magnetization direction of the pinned layer and the pinned layer, which should originally be oriented in the element height direction, was rotated and the device did not operate properly as a magnetoresistive effect element. After the completion of the formation, a magnetizing heat treatment was performed at 200 ° C. in a magnetic field of 500 Oe for 1 hour.

The rotation of the easy axis of the free layer in the magnetization direction due to the magnetization heat treatment was hardly observed from the magnetization curve.

The coercive force of the medium was 3.0 kOe, and MrT was 0.35 emu / cm ² . Using the prototype head, the reproduction output, S / N, mark length (frequency) at which the reproduction output was reduced by half, and bit error rate were measured. The measurement results are shown below.

The above-described conventional example (in the case of the structure of FIG. 11) is also shown. As a result, the reproduction output was almost the same in the case of the conventional structure and the case of the structure of the present invention, and the frequency at which the reproduction output was halved was slightly improved in the case of the present invention, and there was not much difference.

However, in the case of the present invention, the results showed that the S / N was remarkably excellent and the bit error rate was remarkably good as compared with the conventional example.

This is because a structure in which at least a part of the longitudinal bias is in contact with the free magnetic layer in the magnetoresistive element as shown in FIGS. It is considered that the voltage was applied, and as a result, Barkhausen noise of the free layer was reduced.

Actually, the RH loop in the head structure is represented by M
When measured using an R star, it was found that the hysteresis of the free layer was dramatically improved as compared with the conventional structure.

[0246]

[Table 1]

(2) In the case of a spin valve head

First, for comparison, a head using a spin valve having a structure shown in FIG. 11 described in a conventional example was prepared.

At this time, as the spin valve film, / Pt
(2 nm) / Ir21Mn79 (5 nm) / Co90F
e10 (5) / Ru (0.9) / Co90Fe10
(5) / Cu (2 nm) / Co90Fe10 (1 nm)
/ Ni82Fe18 (3) / Pt (2 nm) was used.

After the film formation, a heat treatment at 230 ° C. for 5 hours was performed while applying a magnetic field of 500 Oe in a direction orthogonal to the magnetic field at the time of film formation. The following components were used as the components of the head.

Substrate: 2 mm thick Altic laminated with 10 μm of alumina Lower shield layer: 0.3 μm thick Co65i12Fe2
3 (composition is at%, the same applies hereinafter) Lower electrode layer: Ta (5 nm) / Au (60 nm) / Ta
(5 nm) Upper electrode layer: Ta (5 nm) / Au (60 nm) / Ta
(5 nm) Upper shield layer: Co89Zr4Ta4 having a thickness of 0.3 μm
Cr3 insulating layer: alumina with a thickness of 20 nm Vertical bias layer: Cr (5 nm) /Co74.5Cr1
0.5 Pt15Cr (12 nm) Interface control layer: None Lower gap layer: None Upper gap layer: None Upper layer: None

This head was processed into a recording / reproducing integrated head as shown in FIG. 30 and processed into a slider to record and reproduce data on a CoCrTa-based medium.

At this time, the write track width is 0.5 μm.
m, the write gap was 0.08 μm, and the read track width was 0.2 μm. For processing of the spin valve element portion, a photoresist process by direct drawing of an electron beam and a reactive etching process were used.

The photoresist curing step at the time of forming the coil portion of the write head was performed at 250 ° C. for 2 hours.

In this step, the magnetization direction of the pinned layer and the pinned layer, which should originally be oriented in the element height direction, was rotated and could not operate properly as a magnetoresistive effect element. After the completion of the formation, a magnetization heat treatment was performed at 180 ° C. in a magnetic field of 500 Oe for 1 hour.

The rotation of the easy axis of the free layer in the magnetization direction due to the magnetization heat treatment was hardly observed from the magnetization curve.

The coercive force of the medium was 4.0 kOe, and MrT was 0.38 emu / cm ² . Using the prototype head, the reproduction output, S / N, mark length (frequency) at which the reproduction output was reduced by half, and bit error rate were measured.

The measurement results are shown below. The playback output is 3.8
The recording / reproducing frequency at which the reproduction output was halved was not so bad, but the S / N was as low as 20 dB and the bit error rate was as bad as 2 × 10 ⁻³ .

This is because Barkhausen noise is included in the reproduced signal. When the RH loop of the head was measured, the hysteresis of magnetization reversal of the free layer was large, and Barkhausen noise was generated due to the domain wall movement of the free layer. It became clear that he was doing. In the structure of FIG. 11, the vertical bias layer and the free layer are separated by the insulating layer, so the vertical bias was not sufficiently applied to the free layer, and the vertical bias did not contribute to the reduction of Barkhausen noise. Was done.

Reproduction output: 3.8 mV Recording / reproduction frequency at which reproduction output is reduced by half: 180 kFCI S / N: 20 dB Bit error rate: 2 × 10 ^-3

Next, an embodiment of the present invention will be described with reference to FIGS.
The head of the structure was created.

After the film formation, a heat treatment at 250 ° C. for 5 hours was performed while applying a magnetic field of 500 Oe in a direction orthogonal to the magnetic field at the time of film formation. The following components were used as components of the head.

Spin valve film: / Pt (2 nm) / Ir
21Mn79 (5 nm) / Co90Fe10 (5) / R
u (0.9) / Co90Fe10 (5) / Cu (2n
m) / Co90Fe10 (1 nm) / Ni82Fe1
8 (3) / Pt (2 nm) Substrate: 10 μm alumina on 2 mm thick Altic
Lower shield layer: Co65Ni12Fe with a thickness of 0.3 μm
23 (composition is at%, the same applies hereinafter) Lower electrode layer: Ta (5 nm) / Au (60 nm) / Ta
(5 nm) Upper electrode layer: Ta (5 nm) / Au (60 nm) / Ta
(5 nm) Upper shield layer: Co89Zr4Ta4 having a thickness of 0.3 μm
Cr3 insulating layer: alumina with a thickness of 20 nm Vertical bias layer: Cr (5 nm) /Co74.5Cr1
0.5 Pt15 (12 nm) Interface control layer: None Lower gap layer: None Upper gap layer: None Upper layer: None

This head was processed into a recording / reproduction integrated type head as shown in FIG. 30 and processed into a slider to record and reproduce data on a CoCrTa-based medium.

At this time, the write track width is 0.5 μm.
m, the write gap was 0.08 μm, and the read track width was 0.2 μm. For processing of the spin valve element portion, a photoresist process by direct drawing of an electron beam and a reactive etching process were used.

The photoresist curing step at the time of forming the coil portion of the write head was performed at 250 ° C. for 2 hours. By this step, the magnetization directions of the fixed layer and the fixed layer, which should originally be oriented in the element height direction, were rotated and did not operate properly as a magnetoresistive element. , 200 ° C, 5
The magnetizing heat treatment was performed in a 00 Oe magnetic field for one hour.

The rotation of the easy axis of the free layer in the magnetization direction due to the magnetization heat treatment was hardly observed from the magnetization curve.

The coercive force of the medium was 4.0 kOe, and MrT was 0.38 emu / cm ² .

Reproduction output, S /
N, the mark length (frequency) at which the reproduction output was reduced by half, and the bit error rate were measured.

The measurement results are shown below.

Using the prototype head, reproduction output, S /
N, the mark length (frequency) at which the reproduction output was reduced by half, and the bit error rate were measured.

The measurement results are shown below. The above-mentioned conventional example (in the case of the structure of FIG. 11) is also shown.

As a result, the reproduction output is almost the same in the case of the conventional structure and in the case of the structure of the present invention, and the frequency at which the reproduction output is reduced by half is slightly improved in the case of the present invention, and there is not much difference. Was.

However, in the case of the present invention, the results showed that the S / N was remarkably excellent and the bit error rate was also remarkably good as compared with the conventional example.

This is because a structure in which at least a part of the vertical bias is in contact with the free magnetic layer in the magnetoresistive element as shown in FIGS. It is considered that the voltage was applied, and as a result, Barkhausen noise of the free layer was reduced.

Actually, the RH loop in the head structure is represented by M
When measured using an R tester, it was found that the hysteresis of the free layer was dramatically improved as compared with the case of the conventional structure.

[0277]

[Table 2]

Next, a description will be given of a magnetic disk device prototyped by applying the present invention.

The magnetic disk device has three magnetic disks on a base, and houses a head drive circuit, a signal processing circuit, and an input / output interface on the back surface of the base.

A connection to the outside is made by a 32-bit bus line. Six heads are arranged on both sides of the magnetic disk. A rotary actuator for driving the head, a drive and control circuit therefor, and a spindle direct connection motor for rotating the disk are mounted.

The diameter of the disk is 46 mm, and the data surface has a diameter of 10 mm to 40 mm. Since an embedded servo system is used and there is no servo surface, high density can be achieved.

This device can be directly connected as an external storage device of a small computer. The input / output interface is equipped with a cache memory and corresponds to a bus line having a transfer rate in the range of 5 to 20 megabytes per second. In addition, a large-capacity magnetic disk device can be configured by installing an external controller and connecting a plurality of the present devices.

[0283]

According to the present invention, it is possible to obtain a magnetoresistive sensor, a magnetoresistive head, and a recording / reproducing system which have less noise in the reproduced waveform, and have a good S / N and bit error rate. .

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of a first specific example of a magnetoresistive head according to the present invention.

FIG. 2 is a cross-sectional view illustrating the configuration of a second specific example of the magnetoresistive head according to the present invention.

FIG. 3 is a cross-sectional view illustrating the configuration of a third specific example of the magnetoresistive head according to the present invention.

FIG. 4 is a cross-sectional view illustrating a configuration of a modification of the third specific example of the magnetoresistive head according to the present invention.

FIG. 5 is a cross-sectional view illustrating a configuration of another modification of the third specific example of the magnetoresistive head according to the present invention.

FIG. 6 is a cross-sectional view illustrating the configuration of another modification of the third specific example of the magnetoresistive head according to the present invention.

FIG. 7 is a cross-sectional view illustrating a configuration of a fourth specific example of the magnetoresistive head according to the present invention.

FIG. 8 is a cross-sectional view illustrating a configuration of a fifth specific example of the magnetoresistive head according to the present invention.

FIG. 9 is a cross-sectional view illustrating a configuration of a seventh specific example of the magnetoresistance effect head according to the present invention.

FIG. 10 is a cross-sectional view illustrating the configuration of a sixth specific example of the magnetoresistive head according to the present invention.

FIG. 11 is a sectional view showing an example of the configuration of a conventional magnetoresistive head.

FIG. 12 is a diagram showing a magnetoresistive effect head;
9 is a graph showing a relationship between a magnitude of a vertical bias and a shift amount of an end.

FIG. 13 is a diagram showing an example of the configuration of a conventional magnetoresistive head used for the measurement of FIG.

FIG. 14 is a plan view illustrating the configuration of a first specific example of a magnetoresistive head according to the present invention.

FIG. 15 is a plan view illustrating the configuration of a second specific example of the magnetoresistive head according to the present invention.

FIG. 16 is a plan view illustrating the configuration of a third specific example of the magnetoresistive head according to the present invention.

FIG. 17 is a plan view illustrating the configuration of a fourth specific example of the magnetoresistive head according to the present invention.

FIG. 18 is a plan view illustrating the configuration of a fifth specific example of the magnetoresistance effect head according to the present invention.

FIG. 19 is a plan view illustrating the configuration of a seventh specific example of the magnetoresistive head according to the present invention.

FIG. 20 is a plan view illustrating the configuration of a sixth specific example of the magnetoresistance effect head according to the present invention.

FIG. 21 is a plan view showing a procedure for manufacturing the magnetoresistive head of the first specific example according to the present invention.

FIG. 22 is a plan view showing a procedure for producing a magnetoresistive head of a second specific example according to the present invention.

FIG. 23 is a plan view showing a procedure for producing a magnetoresistive head of a third specific example according to the present invention.

FIG. 24 is a plan view showing a procedure for producing a magnetoresistive head of a fourth specific example according to the present invention.

FIG. 25 is a plan view showing a procedure for manufacturing magnetoresistive heads according to fifth and sixth specific examples according to the present invention.

FIG. 26 is a plan view showing a procedure for manufacturing a magnetoresistive head according to a seventh specific example of the present invention.

FIG. 27 is a plan view showing a procedure for producing a magnetoresistive head according to the present invention.

FIG. 28 is a plan view showing a procedure for producing a magnetoresistive head according to the present invention.

FIG. 29 is a cross-sectional view showing a configuration in the vicinity of the magnetoresistive element when cut in the longitudinal direction including the magnetoresistive element section in the magnetoresistive head according to the present invention.

FIG. 30 is a perspective view showing an example of the configuration of a recording / reproducing head to which the magnetoresistive head according to the present invention is applied.

FIG. 31 is a perspective view showing an example of the configuration of a magnetic recording / reproducing apparatus using the magnetoresistive element of the present invention.

[Explanation of symbols]

 1: Lower shield layer 2: Lower electrode layer 3: Fixed layer 4: Fixed layer 5: Nonmagnetic layer, barrier layer 6: Free layer 7: Vertical bias layer 8: Insulating layer 9: Upper electrode layer 10: Upper shield layer 11: Interface control layer 20: Magnetoresistance effect film, ferromagnetic tunnel junction film 30: Magnetoresistance effect head 41: Coil 42: Base 43: Magnetic pole 44: Upper magnetic pole 45: Reproducing head 46: ABS 50: Recording head 51: Reproducing head 52: Substrate also serving as head slider 53: Recording medium 54: Leakage magnetic field from medium

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Nobuyuki Asbestos 5-7-1 Shiba, Minato-ku, Tokyo Inside NEC Corporation (72) Inventor Masafumi Nakata 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation (72) Inventor Tsutomu Ishi 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation (72) Inventor Hiroaki Honjo 5-7-1 Shiba, Minato-ku, Tokyo NEC (72) Inventor Kunihiko Ishihara 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation Inside (72) Inventor Junichi Fujikata 5-7-1 Shiba, Minato-ku, Tokyo NEC (72) Inventor Hisao Matsudera 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation Inside (72) Inventor Hisao Tsuge 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation (72) Inventor Atsushi Kamijo, Tokyo Port Shiba 5-chome No. 7 No. 1 NEC Co., Ltd. in the F-term (reference) 2G017 AA01 AB07 AC01 AD55 AD65 5D034 BA02 BA03 BA04 BA18 CA06 5E049 AA01 AA04 AA07 AC00 AC05 BA12 CB02 DB02 DB12

Claims (6)

[Claims] 1. A free layer / non-magnetic layer / fixed layer, wherein a current flows between the free layer and the fixed layer via the non-magnetic layer, and a vertical bias layer pattern is provided to contact the free layer. A vertical bias layer pattern formed near the end of the free layer pattern so that the lower surface of the free layer pattern and the upper surface of the vertical bias layer are in contact with each other near the end of the free layer pattern; Or a vertical bias layer pattern is formed above the free layer pattern such that the upper surface of the free layer pattern and the lower surface of the vertical bias layer pattern are in contact with each other. 2. A free layer / non-magnetic layer / fixed layer, wherein a current flows between the free layer and the fixed layer via the non-magnetic layer, and a longitudinal bias layer pattern is provided to contact the free layer. A magnetoresistive element, wherein the free layer pattern width is wider than the fixed layer pattern width when viewed from the ABS side, and the vertical bias layer is in contact with an end of the free layer pattern; A magnetoresistive element in which the vertical bias layer pattern does not contact the pattern end. 3. A free layer / non-magnetic layer / fixed layer, wherein a current flows between the free layer and the fixed layer via the non-magnetic layer, and a vertical bias layer pattern is provided in contact with the free layer. A magnetoresistive element, and a vertical bias layer pattern having a width equal to the width of the free layer pattern when viewed from the ABS side is formed on the free layer pattern so as to be in contact with the surface directly or via the interface control layer. Magnetoresistive effect element. 4. A vertical bias layer pattern comprising a free layer / non-magnetic layer / fixed layer, wherein a current flows between the free layer and the fixed layer via the non-magnetic layer, and the vertical bias layer pattern contacts the free layer. A magnetoresistance effect element, wherein an end of the free layer pattern is covered with an insulating vertical bias layer. 5. A magnetoresistive element according to claim 1, further comprising means for generating a current through the magnetoresistive element, and means for detecting a change in resistivity of said magnetoresistive element as a function of a detected magnetic field. And a magnetoresistive detection system comprising: 6. A magnetic storage medium having a plurality of tracks for data recording, a magnetic recording system for storing data on the magnetic storage medium, a magnetoresistive detection system according to claim 5, and magnetic recording. A magnetic storage system comprising: a magnetic recording system and an actuator means coupled to the magnetoresistive transducing system for moving the system and the magnetoresistive sensing system to a selected track of the magnetic storage medium.