JP2001136017A - Active integrated antenna and active integrated antenna array - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an active integrated antenna and an active integrated antenna array adopting a multi-layer structure consisting of integration of an antenna circuit and an active circuit that can especially suitably be applicable to a radio transmission power system that transmits power by radio to a desired place. SOLUTION: The active integrated antenna and active integrated antenna array is provided with an oscillation layer 700 that generates a carrier signal, a modulation layer 500 that modulates the carrier signal received from the oscillation layer 700, an amplifier layer 300 that amplifies the signal received from the modulation layer 500, and a radiation layer 100 that emits a signal received from the amplifier layer 300 as an electromagnetic wave and each layer adopts a layered structure.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active integrated antenna and an active integrated antenna array having a multilayer structure in which an antenna circuit and an active circuit are integrated, and more particularly to a wireless power transmission system for wirelessly transmitting power to a desired place. The present invention relates to an active integrated antenna and an active integrated antenna array that can be suitably applied.

[0002]

2. Description of the Related Art In recent years, wireless power transmission systems utilizing electromagnetic waves in the microwave band, the millimeter wave band, and the like have been proposed worldwide. A wireless power transmission system is a system for wirelessly transmitting energy (electric power) to a desired place. In particular, great expectations are placed on the entire human race as an alternative energy means accompanying the depletion of fossil fuels such as petroleum. .

[0003] In particular, the so-called space solar power generation satellite project, which generates direct-current power from solar energy using a solar cell and further converts the converted power into microwaves to wirelessly transmit the power from outer space to the ground, is called global warming. It is also studied as one of the clean energy from the viewpoint of prevention.
In Japan, the so-called SPS2000 system is being researched as a feasible solar power satellite mainly by the Ministry of Education.

The SPS2000 system has an altitude of about 1
A power generation satellite located at 100 km, having a shape of an equilateral triangle having a size of 336 m on a side and 303 m in an axial direction, a solar cell panel deployed on two upper surfaces, and a power transmission antenna on a lower surface. It is mounted and orbits with its side always facing the ground.

Here, a power transmitting antenna in a solar power generation satellite is called a "space tena", and an antenna for receiving electromagnetic waves transmitted from the space tena is called a "rectenna". The space tenor is required to be able to transmit an electromagnetic wave having a frequency of 2.45 GHz with an output of 10 MW (megawatt). Conventionally, phased array antennas have been used as power transmission antennas that have been used in experiments.

Japanese Patent Application Laid-Open No. 10-303640 discloses an antenna device in which an element antenna and a high-frequency circuit are formed in a multilayer substrate. This antenna device is an antenna device capable of suppressing a loss due to a line as a result of shortening the line length. However, a configuration in which the elements are closely arranged only enables connection by electromagnetic coupling. Therefore, such an antenna device is SPS2
It is not a configuration that can be suitably used as a power transmission antenna of a power generation satellite in a 000 system or the like.

[0007]

In the space tenor used in the solar power satellite, the payload (weight load) becomes a problem. That is, in the case of the SPS2000 system, for example, when the conventional phased array antenna is used for transmitting large power, the mass of the space tenor itself occupies about 60% of the mass of the satellite body. Increasing the payload of the entire satellite requires considerable propulsion when the satellite is put into orbit by launching a rocket, so it requires enormous cost and excess fuel, and it is difficult to realize the space solar power satellite project. I have to. for that reason,
It has been expected to provide specific means for solving the problem of weight reduction.

Also, the degree of coupling of the antenna (coupling)
It has also been expected to provide an active integrated antenna array having an array structure with improved characteristics and suitable for use in the SPS2000 system.

Further, in the conventional configuration using the phased array antenna, since power is synthesized in the power generation satellite and then transmitted by the phased array antenna, power loss in the power synthesis process in the power generation satellite is reduced as much as possible. But it was an important issue. Therefore, provision of specific means for reducing such power loss has been expected.

[0010]

The inventor of the present invention has conducted intensive studies, and as a result, has found that the present invention relates to an oscillation layer for generating a carrier signal, and a modulation layer for modulating a carrier signal input from the oscillation layer. An amplification layer for amplifying a signal input from the modulation layer, and a radiation layer for radiating a signal input from the amplification layer as an electromagnetic wave, by forming each of the layers as an active integrated antenna having a laminated structure. From a oscillating layer for generating a carrier having a suitable frequency of about 2.45 GHz for transmitting electric power to a radiation layer for finally transmitting electric power as an electromagnetic wave to a thin plate-shaped substrate ( Functional antennas), and as a result of these being formed in a hierarchical structure, the weight can be significantly reduced as compared with the conventional active antenna.
An active integrated antenna or the like that can be suitably used for the PS2000 system can be provided.

Further, by providing the coupling layer between the respective functional layers, the degree of coupling and the Q value of the antenna can be greatly improved, so that the power loss in the power combining process can be remarkably reduced. . Further, by arranging a large number of such active integrated antennas in a two-dimensional plane, the SPS 200 that supplies a large power from the outer space to the ground is provided.
Thus, it is possible to provide an active integrated antenna array or the like that can be suitably used in the system No. 0. Since the active integrated antenna array and the like can combine the radiated power from each active element in space, the process of performing power combining in the power generation satellite can be omitted. As a result, it is possible to eliminate the power loss at the time of power combining in the conventional power generation satellite.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to the drawings. FIG. 1A shows a unit cell U, ie, a unit cell U having three layers, which may be applied to the active integrated antenna of the present invention.
FIG. The unit cell U is, in principle,
From below, the amplification layer 300, the first coupling layer 200, and the radiation layer 10
0, but may have a two-layer structure excluding the first coupling layer 200.

The amplifying layer 300 is a functional layer for amplifying an input signal such as a low frequency modulation signal, and may include a first amplifying unit 301. The first amplifying means 301 includes:
First power amplifying unit (power amplifying circuit) 301 including an FET (Field-Effect Transistor).
a, a first microstrip line 301b, and a first patch resonance circuit 301c.

The first coupling layer 200 is provided with at least one, and preferably two, slot portions on a substrate as a metal ground plane plate. The slots are formed at a fixed distance from each other so as to be arranged in parallel. The slot portion here may be referred to as first slot portions 201, 201. The first slot portions 201, 201
It can be formed by peeling, dissolving or removing the metal thin film on the surface by etching the surface of the substrate made of a dielectric slab, etc., but is not limited thereto, and can be formed by any means. .

The radiation layer 100 is provided with a patch antenna section 101 at an appropriate position on the substrate surface, preferably near a substantially central position, for transmitting electromagnetic waves for power transmission satisfactorily.
Further, two slot portions (radiation slot portions 10) are formed on the back surface of the patch antenna portion 101 with the substrate therebetween so as to be aligned with both ends of the patch antenna portion 101.
2, 102) (see FIG. 1B).

FIG. 2 shows the basic structure of the active integrated antenna A of the present invention. In principle, several functional layers having various functions are added below the unit cell U. . According to this structure, it can be suitably applied to a layered radar front-end system. Each functional layer is provided with an oscillation layer 70
0, third coupling layer 600, modulation layer 500, second coupling layer 40
0, the amplification layer 300, the first coupling layer 200, and the radiation layer 100. In this specification, the term “functional layer” may refer to a generic term for all of these layers or any arbitrary layer. In the case where the term “bonding layer” is simply used, the first bonding layer 200 and the second bonding layer 40 are used.
0 and / or the third bonding layer 600.

Here, the amplifying layer 300 is a modification of the first amplifying means 301 of the amplifying layer 300 shown in FIG. The strip line 301b may be extended in the cross direction to have an open end (see FIG. 2). However, the present invention is not limited to this, and the first amplifying unit 301 in the unit cell U of FIG. 1 may be applied as it is.

The modulation layer 500 is a functional layer for modulating an input signal (carrier).
The shape of the substrate is slightly larger than the substrate of the unit cell U. On the substrate surface, a second amplifying unit 501 may be provided as an amplifying unit similar to the first amplifying unit 301 provided on the amplifying layer of the unit cell U. The second amplifying unit 501, like the first amplifying unit 301, may include a second power amplifying unit 501a, a second microstrip line 501b, and a second patch resonance circuit 501c. With such a configuration, heat generated from the second amplifying unit 501 can be easily radiated to outer space.

The oscillation layer 700 is a functional layer for oscillating signals (carriers), and is formed on a substrate surface.
Oscillating section 701a provided with an active element such as an FET for generating a signal (carrier) near the center of the long side of the C-shaped strip line 701 and the C-shaped strip line 701
May be provided.

Here, preferably, the first coupling layer having two first slot portions 201, 201 disposed in parallel with each other between the radiation layer 100 and the amplification layer 300 is formed on the surface. Insert 200.

Further, preferably, the second coupling layer 400 having two second slot portions 401, 401 disposed in parallel with each other is formed between the amplification layer 300 and the modulation layer 500. insert.

Further, preferably, the third coupling layer 600 having two third slot portions 601 and 601 arranged in parallel between the modulation layer 500 and the oscillation layer 700 is formed on the surface. insert.

Each functional layer is formed of a thin dielectric substrate such as a dielectric slab. On the surface of the first coupling layer 200 and the like, at least one, and preferably two, the first slot portions 201 and 201 and the like are arranged in parallel at a certain distance from each other. Can be changed. The functional layers disposed above and below the slots are separated (isolated) by each of these slots. In this specification, the term “slot” is a general term for the first slot 201, the second slot 401, and the third slot 601, or any one of them. .

Here, the arrangement direction of each slot will be described. For example, in the case of the unit cell U shown in FIG. 1A, the disposition direction of the first coupling layer 200 is such that the longitudinal direction of the first slot portions 201, 201 is located at a position above the radiation slot portion. They are arranged so as to coincide with the longitudinal direction of 102, 102, that is, in parallel.

Further, the second bonding layer 400 includes the first bonding layer 400.
In relation to the coupling layer, the second slot portions 401, 40
1 is arranged in a direction orthogonal to the first slot portions 201, 201 in a horizontal plane. Hereinafter, the same applies to the third bonding layer 600.
And a horizontal plane.

Next, the active integrated antenna A of the present invention
The operation of will be described. In the present embodiment, the operating frequency is set to 2.45 GHz. However, the operating frequency is not limited to this, and an appropriate frequency in an appropriate microwave, millimeter wave, or other wavelength band can be applied. The radiation layer 100 is arranged at an upper position of the hierarchical structure in order to avoid an influence on antenna performance due to signal leakage from a circuit. That is, from the functional layers including active circuits such as the oscillation layer 700 and the modulation layer 500 to the radiation layer 1.
00 may be separated by a certain distance.

The patch antenna section 101 in the uppermost radiation layer 100 is a small planar antenna that is excited by two radiation slot sections 102, 102 provided on the back side of the substrate. The main transmission line is designed to have a characteristic impedance of 50Ω by a microstrip line (not shown) as in the case of the strip line. For example, an electromagnetic field simulator (HP EESof
It can be designed to resonate at an appropriate frequency using Momentum. In this case, the patch antenna section 101 viewed from the first slot section 201 as an RF input section (high-frequency input section) becomes an LC parallel type resonance circuit having radiation loss, and the oscillation frequency stabilizing device and the radiator are connected to each other. It can perform both functions.

In the modulation layer 500, an input signal of 2.45 GHz input from the outside passes through a simple filter by traveling left and right with respect to the excitation direction of the second patch resonance circuit section 501c. State, and the second patch resonance circuit portion 501c of the second amplification means 501
In the width direction. The signal is supplied to the second power amplifier 50
1a (see FIG. 2). The amplified signal is re-input in the length direction of the second patch resonance circuit 501c (according to the direction shown in FIG. 1A). As a result, the filtered vertical polarized original signal is converted into an amplified horizontal polarized wave, so that crosstalk can be suppressed well (see FIG. 1).

FIG. 3 shows a circuit configuration of the first amplifying means 301a which may be provided on the amplifying layer 300. FET amplifier unit 301a ₁ is gain 2.45GHz is designed to be 17 dB. Further, as the input ports 301a ₂ and the output port 301a _3, provided between the first matching circuit portion 301a ₄ and a second matching circuit portion 301a _5. Wherein for obtaining stability of the FET amplifier unit 301a _1, DC cut capacitors C _1, and C ₂ and the chip resistor R is connected in parallel with the gate terminal side. Furthermore, the drain side may be configured to be connected to a DC-cut capacitor C _3.

[0030] wherein the first matching circuit portion 301a _4, 3
As shown in FIG. ₁ , the microstrip lines M ₁ and M ₂ are provided, and one of them is preferably an open end. Thereby, it can function favorably as an alignment stub. There is a similar configuration also in the second matching circuit portion 301a _5. The FET amplifier 301
the design of a ₁ can be realized with a commercially available CAD (HP Co. EesofMDS).

Next, an experimental result of the S parameter of the first power amplifying section 301a is shown in FIG. From this, 2.45
In a fixed frequency band centered on GHz, -16
return loss (S11) at the input port of dB,
10% bandwidth with -10dB return loss and 14dB
It can be seen that the gain of

Next, FIG. 5 shows an input / output power characteristic graph of the third harmonic. Thus, the third harmonic has an input power and an output of the fundamental signal of 3 dBm and 16 dB, respectively.
It can be seen that when m is less than -20 dBm at the 1 dB compression point.

Next, FIG. 6 shows noise characteristics. Frequency 2.
The noise in the case of 45 GHz is about 4.72 dB, which is an extremely good characteristic.

Next, the circuit configuration of the passive first amplifying means 301 which may be applied to the amplifying layer 300 will be described with reference to FIG.
It is shown in (A). 7A and 7B correspond to an occupied area when the unit cell U shown in FIG. 1 is viewed from above. Here, the first amplifying means 301 is formed of a passive circuit, has a length of 0.48 λgs (that is, a strip line type resonance circuit), and has a wavelength of 0.5 λgs.
gs width sandwich-like first patch resonance circuit 301c
, A strip line 302 as an impedance converter and a transmission line, and a matching open stub 303 in the length direction of the first patch resonance circuit 301c and the transmission line. Here, λgs means a guide wavelength. Further, a strip line 302, a first port 304, and a second port 305 are provided. The input signal is filtered by propagation in the width direction of the first patch resonance circuit 301c.
The signal propagating in the width direction is applied to the strip line 30.
The signal is re-input in the length direction of the patch resonance circuit 301c after making a round about 2 or the like.

Here, when the unit cell U is of an active type, a strip line 302 provided between the second port 304 and the third port 305 in FIG. As shown in FIG.
This can be realized by replacing the first power amplification unit 301a using an active element such as an FET.

Next, the operation of each coupling layer will be described.
In order to sufficiently electromagnetically excite the patch antenna section 101 in the uppermost radiation layer 100 based on a signal from the lowermost oscillation layer 700, the first slot sections 201, 201 each including two slot sections. Preferably, the shape and position of an electromagnetic simulator (Eesof HP)
Momentum).

In particular, FIG. 7B is a plan view of the radiation layer 100, and the radiation slot portions 102, 102 are formed on the back side of the patch antenna portion 101 across the substrate. For example, the radiation slots 102, 10
The size, shape, forming method, forming position, etc. of
It may be substantially the same as the slot portions 201, 201 and the like.

In the active integrated antenna A of the present invention, one slot may be provided in each of the coupling layer and the radiation layer 100, each of the radiation slots 102, 102 and the like. in this case,
Only the upper half of the resonance power can be absorbed. However, as shown in FIG.
When the number of slots such as 102 is two, the entire power of the patch resonance circuit can be absorbed. Therefore,
With a configuration using two slots, the degree of coupling is further improved.

Next, in order to optimize the transmission power supply structure, the design process of the active integrated antenna A of the present invention shown in FIG. 2 is preferably as follows. That is,
The position and arrangement of each functional layer, each coupling layer, and each slot are determined. The structure of each coupling layer, each functional layer, and each substrate made of a dielectric slab, and the position and arrangement of each slot are adjusted. The unit cell U having a laminated structure via each coupling layer provided with a slot.
Is finalized in position and sequence.

FIG. 8 shows the characteristics of S11, which is the S parameter of the one-port circuit. Each of the simulated S11 is the first patch resonance circuit 301
It is shown based on the distance from the center position of c. FIG.
9 shows a simulation result in the unit cell U as a passive circuit. FIG. 8A is a graph showing a simulation result in the case of a two-layer structure of the first coupling layer 200 and the amplification layer 300. FIG. 8 (B)
Is a graph showing a simulation result in a case of a three-layer structure including the radiation layer 200, the first coupling layer 200, and the amplification layer 300, and the radiation layer 100 is not provided with the patch antenna unit 101. It is. FIG. 8C shows the radiation layer 200, the first coupling layer 200, and the amplification layer 3.
FIG. 10 is a graph showing a simulation result in the case of a three-layer structure including the patch antenna unit 101 provided in the radiation layer 100. According to this method, the optimum distance from the center position of the patch resonance circuit 301c can be easily determined.

The patch antenna section 101 which may be provided on the uppermost radiation layer 100 has a size of about 2.45 GHz.
Is preferably designed to resonate. FIG. 7 (A)
FIG. 9 shows a change in the S parameter due to the simulation of the integrated antenna as the three-port network shown in FIG. However, the microstrip line 301b connecting between the second port 304 and the third port 305 in FIG. 7A is omitted. As a result, between the first port 306 and the second port 304, the expected characteristic of a simple filter around 2.45 GHz can be confirmed. It also has characteristics as an impedance converter. Therefore, similarly to the radiation layer 100, the signal resonates twice in the amplification layer 300, so that the Q value of the antenna as a whole increases.

From the viewpoint of the structure of the space tenor, it is preferable that the unit cell U is expanded two-dimensionally. However, it is extremely difficult to construct a huge plate in which two or more active integrated antennas A according to the present invention are arranged two-dimensionally in outer space. Therefore, the structure is decomposed into small pieces. In the present specification, the small pieces may be referred to as “unit patch plates” or simply “plates”. In this case, the plates are coupled not only mechanically but also electromagnetically.

Next, the active integrated antenna A of the present invention
The details of the manufacturing method will be described. The FET applied to the active integrated antenna of the present invention is a package type MESFET (MGF1801B manufactured by Mitsubishi), but any FES having similar characteristics can be used.
Applicable for ET. In addition, the operating frequency is 2.45 GH
If it is other than z, any FET suitable for amplifying the transmission power related to the frequency can be applied.

The substrate applied to each layer in the present invention is 25NG0310CSSA (manufactured by Aaron: dielectric coefficient = 3.25, thickness 0.751 mm, copper thickness = 0.01).
Although a dielectric slab such as 8 mm) was applied, any material having similar characteristics can be applied. The measurement in this embodiment was performed using a horn antenna (9.9 dBi at 2.45 GHz) in a radio wave anechoic chamber, and the distance from the active integrated antenna A of the present invention was about 1.7 m.

FIG. 12A shows the calculated return loss characteristics of the unit cell U as a passive circuit.
It is a graph which shows the measurement result. The resonance frequency of the unit cell U was about 2.450 GHz, but the measured resonance frequency was about 2.455 GHz, and the error was about 0.2%, confirming the effectiveness of the unit cell U. Was done. Here, the gain of the horn antenna was set to 5.1 dBi.

Based on the above measurement result of the unit cell U, a part of the microstrip line 301b between the second port 304 and the third port 305 in FIG. The active integrated antenna A of the present invention is realized by replacing the power amplifying unit 301a. Here, the weight of the unit cell U is about 50 g.

The first power amplifier 301 according to the present invention
The bias conditions such as “a” are as follows: Vgs = −1.0 V, Vds =
2.5 V, Ids = 80 mA. Here, Vgs means a gate-source voltage, Vds means a drain-source voltage, and Ids means a drain-source current.
Compared with the case of the unit cell U, the increase of the received power is 10.5 dB, which is almost equal to the gain of the first power amplifier 301a. FIG. 12 (B) and FIG. 12 (C)
Fig. 7 shows the results of comparison between experimental data of antenna patterns and data based on theoretical values. Although there are some differences, -13 dB on the E plane (see FIG. 11B) and -17 dB on the H plane
A good orthogonal polarization characteristic of dB (see FIG. 11B) can be obtained.

Based on the structure of the unit cell U of FIG. 1, FIG. 10 schematically shows the coupling of the active integrated antenna array with two rows and two columns according to the novel configuration. Here, the coupling in the amplification layer 300 will be described for convenience, but the same applies to the case where amplification is performed in the modulation layer 500.

In this two-row, two-column active integrated antenna array, the directional coupler Cp and the first power amplifier 30
1a and the amplification layer 300 and the modulation layer 5
00 and the like. The center-to-center distance between adjacent patches is preferably set to 0.74λ ₀ on the E plane (electric field plane) and 0.65λ _{0 on} the H plane (magnetic field plane), but is not limited thereto. Here, λ ₀ means a wavelength in a vacuum.

In FIG. 10, the first and second first patch resonance circuits 301c (# 1) and 301c (# 2) operating at the same amplitude are mutually compensated. coupling coefficient of the directional coupler Cp is preferably set to the same value as the gain of such FET in the first power amplifier 301a ₁ and the like.

Further, in the relationship between the first first patch resonance circuit 301c (# 1) and the third first patch resonance circuit 301c (# 3) operating at the same amplitude, a part of the input signal , The directional couplers Cp, Cp,... Further, the third first patch resonance circuit 301c
In order to maintain the same amplitude as (# 3), it is preferable that each of the first power amplifiers 301a, 301a,... Is constituted by an FET amplifier having the same value as the coupling coefficient. In some cases, a third power amplifying unit 311 such as an FET is provided in a part of a feedback loop to input an injection signal (not shown) from an external PLL synthesizer or the like.
As a result, since synchronization can be achieved, the stability of the operation is drastically increased, and the directional characteristics can be arbitrarily changed. That is, by appropriately changing the frequency of the synchronization signal, an initial phase difference can be generated in the radiation signal from the adjacent active integrated antenna A. As a result, beam steering for changing the direction of the main beam can be realized very easily.

For each of the adjacent patch resonance circuits # 1, # 3,... Operating in the same phase, the electrical length of the transmission line between the adjacent resonance circuits is adjusted. Therefore, the input signals to each cell (each active integrated antenna A) of the 2-row / 2-column active integrated antenna array of the present invention can be maintained at the same amplitude and the same phase.
Further, cells can be extended to form a two-dimensionally large active integrated antenna array P.

Further, the first power amplifying section 301a may be provided one for each of the patch resonance circuits 301c, 301c,..., Or may be provided in plural (see FIG. 10). That is, in the case of one, one FET amplification circuit of a high amplification degree may be provided, and in the case of a plurality, a plurality of stages of FET amplification circuits of a low amplification degree are provided.
By providing a plurality of stages of first power amplifying units 301a, 301a,... For one patch resonance circuit 301c, even if a high amplification degree is required, a single first power amplifying unit 301
a, without depending on the first power amplifier 30
1a and can be amplified.

In the SPS2000 space tener system, a number of cells are periodically extended. In this case, as described above, each cell, i.e., a unit patch plate P ₁ of four of the active integrated antenna A, can be realized by extending two-dimensionally number. Figure 1 shows the concept
It is shown in FIG. A two-row, two-column active integrated antenna array in which a total of four active integrated antennas A are arranged in two rows and two columns is referred to as a “unit patch plate P ₁ ” in this specification. The unit patch plate P ₁ ,
When a large number of P ₁ ,... Are arranged two-dimensionally, an active integrated antenna array P of the present invention is formed.

The active integrated antenna array P
The unit patch plates P ₁ , P ₁ ,... Adjacent in the longitudinal direction are supported by guide rails F, F,. It is configured to be mechanically connected.
According to this arrangement method, the active integrated antenna array P of the present invention can be easily extended in a space tenor system.

Here, typical bias conditions of the FET amplifier in the unit patch plates P ₁ , P ₁ ,... Are Vgs = −1.0 V (common), Vds = 3.
0 V, Ids = 115 mA.

FIG. 13 is a graph showing a contrast between the measured antenna pattern and the antenna pattern based on the theoretical value.
When an external signal of 2.5 dBm is input, the power received by a honantener (not shown) is -9.30 dBm. The antenna pattern on the E plane and the H plane is
It is clear from the graphs shown in FIGS. 12A and 12B that the values substantially coincide with the theoretical values. By incorporating the directional coupler Cp to the amplifying means, each cell unit patch plate P ₁ is because work at the same amplitude, the same phase.

The active integrated antenna array P of the present invention
In order to realize the application to the SPS2000 system, it is necessary to extend a large number of arrays themselves in a two-dimensional manner and to enlarge the array. In order to realize this, the intervals between the antenna elements must be equal. Along the guide rail F,
The unit patch plates P ₁ , P ₁ ,... Are appropriately arranged.

FIG. 14A is a schematic diagram showing a connection state of the two unit patch plates P ₁ and P _{1 on} the H plane. Typical bias conditions for a FET amplifier are: Vgs = -0.8V, Vds = 6.0V, Ids =
At 60 mA, the measured received power is -2.17 dBm.

Here, ERP (effective radiation power: Effectiv
e Radiation Power) is determined by the following equation.

ERP = (Pr / Gr) · (4πR / λ ₀ ) ² (Equation 1)

Here, Gr is the antenna gain of the receiving horn antenna (not shown), R is the distance between the active integrated antenna A of the present invention and the receiving horn antenna, Pr is the receiving power, and λ ₀ is the wavelength in vacuum. Effective radiation power ER
P is expected to be 32.7 dBm. Therefore, FIG.
As shown in (A), the power density in the direction of the peak radiation power from the eight-element active integrated antenna including eight cells in total is about 64 times that in the unit cell U.

FIG. 14 shows the relationship between the experimental value and the theoretical value of the antenna pattern on the E plane in the configuration of FIG.
(B). Although the side lobes increased due to the radiation leaking from the edge of the substrate, which is a finite region, the experimental values and the theoretical values almost coincide with each other near the main lobe and the origin. Therefore, it can be seen that these unit patch plates P ₁ and P ₁ operate in the same amplitude and the same phase.

Next, in order to realize an array of unit patch plates P ₁ , P ₁ ,.
Form a columnar active integrated antenna array. For this purpose, two sets of two unit patch plates P ₁ and P ₁ shown in FIG. 14A are connected. FIG. 15A shows the combined 4-row, 4-column active integrated antenna array. The array dimension of this array is about 47 cm × about 44 cm, and is preferably configured to be incorporated in a right-angled aluminum frame, but a frame made of other materials is applicable and is not limited to this.

FIG. 15B shows the relationship between the experimental value and the theoretical value of the antenna pattern in the 4-row, 4-column active integrated antenna array of FIG. 15A. It can be seen that the matching between the main lobe and the vicinity of the origin is good.

In this specification, the first power amplifier 301
a and the second power amplification unit 501a may be simply referred to as a “power amplification unit”. Further, the first amplifying unit 301 and the second amplifying unit 501 may be collectively simply referred to as “amplifying unit”. Also, each bonding layer 20
0, 400, and 600 are formed of the same material or the like, so that even if the insertion positions are interchanged with each other, the slot portions 201, 401, and 601 must be aligned in a predetermined direction in the longitudinal direction. No problem. The shape of each of the slot portions 201, 401, and 601 is rectangular in FIGS. 1 and 2 and the like, but is not limited thereto, and may be other polygonal shapes, elliptical shapes, linear shapes, and the like.

Next, a second embodiment of the present invention will be described with reference to FIGS. 16 to 20, especially differences from the first embodiment. FIG. 16A is a conceptual diagram of a stacked structure of an active integrated antenna A ′ according to the second embodiment of the present invention. This embodiment also has a laminated structure as in the first embodiment. "Laminated structure" in the present invention
As shown in FIG. 1, FIG. 2, etc., it is sufficient to simply have a structure in which the functional layers are stacked. For example, the functional layers may be fixed so as to be stacked with a screw, an adhesive, or the like, or may be combined. The entire functional layer may be covered with a resin or the like, but is not limited thereto.

More specifically, the radiation layer 100 as the uppermost functional layer, the first coupling layer 200 disposed below the radiation layer 100, and the radiation layer 100 disposed below the first coupling layer 200 The amplification layer 300 to be arranged, and the amplification layer 300
And the third bonding layer 600 disposed at a position below the first bonding layer 600, and the respective functional layers are integrally formed in a laminated structure. here,
On the back surface of the radiation layer 100, the radiation slot 10
2 and 102 may be provided under the same conditions as in the first embodiment.

In this embodiment, in particular, the third bonding layer 6
00, the C-shaped strip line 701
(See FIG. 16). The C-shaped strip line 70
Reference numeral 1 denotes a substantially C-shape in which both ends (open end portions) of the microstrip line are staggered while maintaining a small interval. In this specification, this open end portion may be referred to as a “staggered open end portion 701b”.
FIG. 16B schematically illustrates the bottom surface of the third bonding layer 300.

FIG. 17 is a bottom view of the third coupling layer 600 according to the present embodiment.
1 staggered open end 701b and the third bonding layer 60
An example of a suitable design value relating to the arrangement and shape of the third slot portions 601 and 601 of 0 is shown. However, the operating frequency in this embodiment is 2.45 GHz, and the measurement conditions are as follows: Vgs = −0.2 volt, V
Since ds = 3 volts, Ids = 20 milliamps, and the amplifier has Vgs = −0.2 volts, Vds = 3 volts, and Ids = 25 milliamps, the long sides and short sides of the third slot portions 601 and 601 are set. 17 is not limited to the value shown in FIG. 17, but is changed to an optimal value by setting various parameters (the substrate thickness of the second coupling layer 600, the operating frequency, the transmission power, the coupling coefficient, etc.). can do.

The width of the microstrip line 701 can also be determined by the value of the impedance (for example, 50Ω, 100Ω, etc.). In this embodiment, the input side impedance of the antenna is set to 50Ω, and the output side of the oscillation section 701a provided with an active element such as an FET is designed to be matched with the output side at 50Ω by a matching circuit (not shown). The output side of the antenna returns 50
A microstrip line 701 of Ω is configured to be directly connected to, for example, the gate side of the FET of the oscillation unit 701a. As described above, the microstrip line 701 is provided at the input / output port, and the patch antenna unit 101 is supplied with power through two slots.
Extremely good reflection loss and transmission can be obtained. For example, 98% or more power is supplied to the patch antenna unit 101, and a feedback circuit having a feedback rate of about 4% can be formed.

The two third slot portions 601, 601
Is preferably rectangular as shown in FIG.
The size may be the same for both, but preferably one is formed smaller than the other (FIG. 18).
(A)). This is because the input unit needs to pick up only a small amount of power.

More specifically, as shown in FIG.
The third slot portion 601 on the FET input side is formed smaller than the third slot portion 601 on the FET output side. As a result, the slot area on the input side is reduced, so that coupling is suppressed, and a part of the output signal can be fed back even better. As a result, an extremely good parallel feedback oscillation circuit can be formed. However, FET
The third slot 601 on the output side may be formed smaller than the third slot 601 on the FET input side.
The shapes of the third slot portions 601 and 601 are rectangular in FIGS. 16 to 18 and the like, but are not limited thereto, and may be other polygonal shapes, elliptical shapes, linear shapes, and the like.

The length of the third slot portions 601 and 601 in this embodiment in the longitudinal direction is preferably as shown in FIG. 16 and FIG.
The width of the microstrip line 701 is substantially the same as or slightly longer than the width of the microstrip line 701, but may be shorter than the width of the microstrip line 701.

Further, the third slot portions 601 and 601 in the present embodiment are preferably arranged so as to intersect with the end of the microstrip line 701 at the staggered open end 701b. Further, the third slot portion 6
01, 601 is different from the other one in the amplification layer 30.
In the area occupied by the 0 patch resonance circuit 301c,
As shown in FIG. 17, they are arranged at a fixed distance. The interval may be any distance. The above-mentioned slot portion 60
The shape and arrangement relationship of 1,601 are not limited to these,
It can be appropriately changed depending on various parameters such as the operating frequency.

[0076] The distance L _o to the open end of the microstrip line 701 which intersects the center of the third slot section 601 and its third slot portion 601 is preferably λg
/ 5 to λg / 3, more preferably about λg / 4 (see FIG. 17). By setting it to approximately λg / 4, the oscillation frequency becomes close to the resonance point, so that stable oscillation can be continued and the design becomes extremely easy.

The other end L _s of the microstrip line 701 intersecting the third slot portion 601 (from the center portion of the third slot portion 601 to the end portion bent at 90 degrees) is preferably 1λg to λg /. 3, more preferably about λg / 2 (see FIG. 17).

[0078] In comparison with the occupied area of the patch resonant circuit 301c (patch antenna unit 101), the vertical length L _p is preferably lambda] g / 2 or less, more preferably 0.49Ramudag. The horizontal length W _p is preferably lambda] g / 2 or less, and more preferably lambda] g / 2.

In this embodiment, the width W of the microstrip line 701 at the staggered open end 701b is
_m can be, for example, 1.7596 mm when the frequency is 2.45 GHz and the dielectric constant of the substrate of each functional layer is 3.25, but is not limited thereto. In addition, frequency 10G
Hz, the dielectric constant of the substrate of each functional layer is 2.17, for example, 2.357 mm, but is not limited to this. The characteristic impedance is 50Ω.

In the present embodiment, the frequency 2.4
In the case of 5 GHz, the third slot 60 on the input side such as an FET
The slot size of 1 is, for example, length L _w1 = 5 mm
(0.065λg), width W _s1 = 12 mm (0.157λg)
g). Furthermore, on the other hand, FET
The slot size of the third slot portion 601 on the equal output side is:
Slightly smaller length L _w2 = 3 mm (0.039λg),
The width W _s2 can be set to 10 mm (0.13λg), but is not limited thereto. When the frequency is 10 GHz, the slot size of the third slot portion 601 on the input side such as an FET is, for example, a length L _w1 = 1.5972 mm.
(0.073λg), width W _s1 = 4.7 mm (0.215
λg). In addition, FE
The slot size of the third slot portion 601 on the output side such as T is slightly smaller, and the length L _w2 = 0.75 mm (0.03
4λg) and width W _s2 = 3 mm (0.137λg), but are not limited thereto.

The electromagnetic energy oscillated by the C-shaped strip line 701 at the staggered open end 701 b is transmitted to the amplifying layer 300 and the patch antenna 101 by the third slots 601 and 601.
Is transmitted (input) to. At this time, part of the input electromagnetic energy is transferred to the third slot 60 on the output side such as an FET.
1 (small shaped slot portion) is fed back to the C-shaped stripline 701. As a result, the C-shaped stripline 701 can function as a parallel feedback oscillation circuit, and stable oscillation is maintained. The degree of coupling S ₂₁ of the C-shaped strip line 701 through the third slot portions 601 and 601 thus formed is:
For example, it is about -16.423 dBm. If a 10GHz frequency in the present embodiment, the degree of coupling S ₂₁ of the C-shaped strip line 701 through the third slot section 601, 601, for example about -11.094dBm
Becomes

FIG. 19 shows antenna patterns on the E plane (FIG. 19A) and the H plane (FIG. 19B) in this embodiment. Accordingly, in the present embodiment, -24.
This indicates that 5 dBm of power could be received. As a measurement condition in this case, the distance between the active integrated antenna of the present embodiment and the receiving horn antenna for measurement was set to about 1.7 meters.

In the functional layers applied to the present embodiment, the first coupling layer 200 and the third coupling layer 600 are provided in respective slot portions (first slot portions 20).
1, 201 and the third slot parts 601, 601 etc.)
It is preferable that they are arranged so as to be orthogonal to each other in a horizontal plane (see FIG. 16). Further, the first bonding layer 200 used in the present embodiment may be the second bonding layer 400 used in the first embodiment. This is because they are substantially the same.

FIG. 20 is a graph showing the received power spectrum measured under the above-described measurement conditions in the active integrated antenna A 'of the present embodiment. From this spectrum, the center frequency of 2.4533 GHz and the received power of -2
It is shown to be 4.50 dBm.

The active integrated antenna A ′ according to the above-described second embodiment may be formed as unit patch plates P ₁ arranged in two rows and two columns as in the first embodiment (FIG. 11). , FIG. 14, FIG. 15). Furthermore, it may be formed of the unit patch plate P ₁ as an active integrated antenna array P formed by arrayed two-dimensionally (see FIG. 11). As a result, the power transmitted from the active integrated antenna A ′ according to the present embodiment is combined with a suitable phase, and as a result, compared to the unit patch plate P ₁ , the active integrated antenna array P, and the like in the _first embodiment. Even weak power can be reliably and efficiently transmitted.

Further, as a third embodiment, the third coupling layer 6 of the active integrated antenna A according to the first embodiment of the present invention.
00, the third bonding layer 600 in the second embodiment
The active integrated antenna A to which the staggered open end 701b is applied may be used.

As described above, according to the present invention, the patch antenna unit 10
1 is provided as the uppermost functional layer, but if the first slot portions 201, 201 can sufficiently radiate an electromagnetic wave, the radiation layer 100 may not be necessary. That is, the oscillation layer 7 for generating the carrier signal
00, a modulation layer 500 for modulating a carrier signal input from the oscillation layer 700, and an amplification layer 300 for amplifying a signal input from the modulation layer 500, wherein each of the layers has a laminated structure. is there. However, if the radiation layer 100 including the patch antenna unit 101 is provided as the uppermost functional layer, the radiation angle can be further narrowed.
Further better beam characteristics can be obtained. The mode in which the radiation layer 100 is not provided as described above is applicable to all embodiments including the first to third embodiments of the present invention.
Can be applied.

[0088]

According to the first aspect of the present invention, the oscillation layer 700 for generating the carrier signal, the modulation layer 500 for modulating the carrier signal input from the oscillation layer 700, and the modulation layer 5
By providing an amplification layer 300 for amplifying a signal input from 00, and a radiation layer 100 for radiating a signal input from the amplification layer 300 as an electromagnetic wave, by forming each of the layers as an active integrated antenna having a laminated structure, A thin plate-shaped active integrated antenna having a stacked structure of functional layers configured for each function can be configured. As a result, an extremely thin and lightweight thin plate antenna can be formed, so that it has an epoch-making effect that it can be suitably applied to a system such as the SPS2000 system that transmits high power. .

More specifically, even if the functional layer composed of one dielectric slab substrate having a thickness of about 0.7 mm is formed into a laminated structure as the oscillation layer 700, the modulation layer 500, the amplification layer 300, and the radiation layer 100, Is 0.7 mm × 4 sheets = 2.
It is 8 mm, and an extremely thin plate-shaped active integrated antenna can be formed. As a result, the total weight can be dramatically reduced compared to the conventional art, so that a large amount of the active integrated antenna of the present invention can be transferred to space at a time, and the power generated by the power generation satellite of the SPS2000 system can be obtained. Can be suitably used as a space tenor for transmitting the signal to the ground.

Further, by providing the radiation layer 100 provided with the patch antenna section 101 as the uppermost functional layer, the radiation angle can be further narrowed, so that better beam characteristics can be obtained. There is also an epoch-making advantage that large power can be transmitted very efficiently.

According to a second aspect of the present invention, the active integrated antenna according to the first aspect is provided with the first power amplifying section 301a having an FET in the amplifying layer 300. In addition to the effect, the signal can be amplified with better amplification characteristics. As a result, since the generation of reflected waves can be suppressed, there is an extremely excellent advantage that energy loss due to heat generation is significantly reduced as compared with the related art.

According to a third aspect of the present invention, in the first or second aspect, the modulation layer 500 is provided with an active integrated antenna provided with a second power amplifying section 501a having an FET. In addition to the excellent effects and advantages of the invention, the signal can be further amplified with better amplification characteristics. As a result, there is an extremely excellent advantage that the energy loss due to heat generation is further reduced as compared with the related art while suppressing the generation of reflected waves.

According to the fourth aspect of the present invention, the first, second or third aspect is provided.
In the description, a first coupling layer 200 having first slot portions 201, 201 is connected to the amplification layer 300 and the radiation layer 10.
0, and the second coupling layer 400 having the second slot portions 401 and 401 is formed by combining the modulation layer 500 and the amplification layer 3 with each other.
00, and the third coupling layer 600 having the third slot portions 601 and 601 is provided as an active integrated antenna provided between the oscillation layer 700 and the modulation layer 500. The bonding layer that fulfills
By having the laminated structure alternately inserted into the other layers, the coupling coefficient when a signal propagates from the lower layer to the upper layer can be significantly improved. That is, by forming a laminated structure in which each of the coupling layers is inserted every other functional layer, a coupler is provided in a part of the feedback loop. As a result, in addition to the extremely excellent effects and advantages according to the first, second and third aspects of the present invention, an excellent advantage that an active integrated antenna capable of radiating large power with extremely good coupling characteristics can be formed. There is.

According to a fifth aspect of the present invention, in the first, second, third, or fourth aspect, the active integrated antenna is provided with a plurality of power amplifying sections in the amplifying layer. A plurality of first power amplification units 3
01a, 301a,..., Even if a high amplification degree is required, the single first power amplification section 301a
Without depending on the first power amplifier 301
a and can be amplified.

As a result, in addition to the extremely excellent effects and advantages according to the first, second, third or fourth aspect of the present invention, the amplification of each of the first power amplifying sections 301a, 301a,. Since the coupling degree can be lower than that of a single case, unnecessary oscillation of the circuit can be prevented,
The active integrated antenna according to the present invention has an extremely excellent advantage that the operation can be more stabilized and power can be reliably transmitted. Further, there is an extremely excellent advantage that unnecessary heat radiation accompanying amplification can be gradually reduced, and the life of the active integrated antenna of the present invention can be extended as a whole.

According to a sixth aspect of the present invention, in each of the fourth and fifth aspects, each of the slot portions 201, 401, and 601 is provided.
Is an active integrated antenna having two slots for each coupling layer, and the two slots 201, 201, 401, 401, 601 and 601 are arranged in parallel at a predetermined distance from each other. As a result of the two slot portions (the first slot portions 201, 201, the second slot portions 401, 401, and the third slot portions 601 and 601) being arranged in parallel two by two, an extremely excellent effect according to the invention of claim 4 or 5 is achieved. In addition to the advantage, when a signal input from the lower layer is propagated to the upper layer, there is an extremely excellent advantage that the signal can be propagated with better coupling characteristics. Particularly, in the relation between the oscillation layer 700 and the third coupling layer 600, one of the third slot portions 601 and 601 returns a part of the input signal to the lower oscillation layer 700 (feedback). There is also a very excellent advantage that a so-called feedback oscillator can be constituted by two layers having a small thickness. Further, in the relationship between the oscillation layer 700 and the radiation layer 100, since the patch antenna unit 101 is incorporated in the feedback loop of the parallel feedback oscillator, there is an extremely excellent advantage that the oscillation frequency is stabilized.

According to the invention of claim 7, according to claim 4, 5, or 6
In the description, the first coupling layer 200, the second coupling layer 400, and the third coupling layer 600 are formed by the slot portions 201, 201, 401, and 4 provided in the coupling layers.
Since the active integrated antennas are arranged such that the longitudinal directions of 01, 601, 601 are orthogonal to each other, the first slot portions 201, 201, the second slot portions 401, 401, and the third slot portions 601, 601 Can be configured as active integrated antennas that are orthogonal to each other in the horizontal plane. as a result,
In addition to the extremely excellent effects and advantages of the invention according to claims 4, 5 and 6, the vibration direction of the signal can be efficiently converted as the signal progresses to the upper layer. There is an extremely excellent advantage that suitable and efficient amplification can be performed.

According to the eighth aspect of the present invention, the oscillation layer 700 for generating the carrier signal, the modulation layer 500 for modulating the carrier signal input from the oscillation layer 700, and the modulation layer 50
Amplifying layer 300 for amplifying a signal input from 0, and a radiation layer 100 for radiating a signal input from the amplifying layer 300 as an electromagnetic wave, and one of the amplifying layer 300 and the modulation layer 500 A power amplifying unit having an FET is provided; a third coupling layer 600 having a third slot is provided between the oscillation layer 700 and the modulation layer 500;
The second coupling layer 400 having a slot portion is connected to the modulation layer 50.
An active integrated antenna provided between the amplifying layer 300 and the amplifying layer 300, a first coupling layer 200 having a first slot portion is provided between the amplifying layer 300 and the radiation layer 100, and each of the layers has a laminated structure. An active integrated antenna having a structure in which a plurality of active integrated antennas A having excellent effects and advantages according to the invention according to claim 4 are formed by arranging a plurality of active integrated antennas A in a two-dimensional array. An array can be formed.
As a result, SPS that needs to transmit large power by electromagnetic waves
Even in the 2000 system, there is an extremely excellent effect that the system can be used as a space tener capable of efficiently radiating light with the same amplitude and the same phase. Furthermore, since the power combining at the time of power transmission is not performed by the active integrated antenna array of the present invention, but is performed in the space to which the power is radiated, the power loss at the time of power combining can be almost ignored. There is also an extremely excellent advantage that the generated heat can be suppressed at each stage as compared with the related art. Furthermore, beam steering can be easily performed by an injection signal, so that beam directivity can be freely changed, and transmission / reception utilizing terminal devices such as indoor millimeter-wave wireless LANs and millimeter-wave automobile radars can be performed. It has the advantage that it can also be used as a mechanical antenna. Further, since there is no need to apply the conventional active phased array technology, it is possible to realize a dramatic reduction in size, weight, and cost of the module.

According to a ninth aspect of the present invention, in the active integrated antenna array according to the eighth aspect, a plurality of power amplifying sections are provided in the amplifying layer 300.
Since a plurality of stages of the first power amplifying units 301a, 301a,... Are provided for one patch resonance circuit 301c, even if a high degree of amplification is required, it depends on the single first power amplifying unit 301a. Without being dispersed, the signals can be amplified by being distributed to some of the first power amplification units 301a.

As a result, in addition to the excellent effects of the invention of claim 8, the amplification of each of the first power amplifiers 301a, 301a,... And the coupling of the directional coupler Cp are single. Since a relatively low value is sufficient, useless oscillation of the circuit can be prevented, the operation of the active integrated antenna of the present invention can be more stabilized, and power can be reliably transmitted. Having.
Further, there is an extremely excellent advantage that unnecessary heat radiation accompanying amplification can be gradually reduced, and the life of the active integrated antenna of the present invention can be extended as a whole.

According to a tenth aspect of the present invention, in each of the eighth and ninth aspects, each of the slot portions 201, 401, and 601 is provided.
Is an active integrated antenna array in which two slots are provided for each coupling layer 200, 400, and 600, and the two slots 201, 401, and 601 are arranged in parallel at a predetermined distance from each other. Slot portions (first slot portions 201, 201, second slot portions 401, 401
As a result, an active integrated antenna array consisting of a set of active integrated antennas A in which two third slot portions 601 and 601) are arranged in parallel can be formed. In addition to the advantage, when a signal input from the lower layer is propagated to the upper layer, there is an extremely excellent advantage that the signal can be propagated with better coupling characteristics. In particular, the oscillation layer 700
In the relationship between the third coupling section 600 and the third coupling section 600, one of the third slot sections 601 and 601 returns a part of an input signal to the lower oscillation layer 700, which is a so-called feedback type. There is also the very good advantage that the oscillator can be composed of two layers with a small thickness.

According to the eleventh aspect, in the eighth, ninth or tenth aspect, the first coupling layer 200, the second coupling layer 400, and the third coupling layer 600 are provided in each of the coupling layers. Each of the slot portions 201, 201, 40
1, 401, 601, and 601 are arranged in an active integrated antenna array in which the longitudinal directions are orthogonal to each other, so that the first slot portions 201, 201, the second slot portions 401, 401, and the third slot portion 60 are formed.
An active integrated antenna array composed of a set of active integrated antennas A, 1 and 601 each having an orthogonal positional relationship in a horizontal plane, can be formed. As a result, in addition to the extremely excellent effects and advantages according to the eighth, ninth, or tenth aspects of the present invention, as the signal travels to the upper layer, the signal vibration direction can be efficiently converted, so that the electromagnetic wave There is an extremely excellent advantage that efficient amplification suitable for polarization can be performed.

According to the twelfth aspect of the present invention, the amplifying layer 300 having the amplifying means 301a having the FET, and the amplifying layer 30
Radiation layer 1 that radiates signals input from 0 as electromagnetic waves
00 and a third layer disposed below the amplification layer 300 and
Third bonding layer 600 having slot portions 601, 601
And a first slot disposed between the amplification layer 300 and the radiation layer 100 and having first slot portions 201 and 201.
The coupling layer 200 is formed as a laminated structure, and the third coupling layer 300 has a substantially C-shaped staggered opening on its back surface in which a part of both ends of the microstrip line is staggered while maintaining a small interval. With the active integrated antenna including the C-shaped stripline 701 having the end 701b, a thin plate-shaped active integrated antenna having a stacked structure of functional layers configured for each function can be configured. As a result, an extremely thin and lightweight thin plate antenna can be formed.
It has an epoch-making effect that it can be suitably applied to a system that transmits high power such as the SPS2000 system.

Specifically, even if a functional layer composed of one dielectric slab substrate having a thickness of about 0.7 mm is formed as a laminated structure as the amplification layer 300 and the radiation layer 100, the overall thickness is 0.7 mm × 4. The number of sheets is 2.8 mm, and an extremely thin plate-shaped active integrated antenna can be formed even if a laminated structure is formed by inserting a coupling layer between them. As a result, the total weight can be dramatically reduced compared to the conventional art, so that a large amount of the active integrated antenna of the present invention can be transferred to the space at a time, and the SPS 200
There is an epoch-making effect that the power generated by the power generation satellite of the No. 0 system can be suitably used as a space tenor for transmitting the power to the ground.

Furthermore, the coupling coefficient when a signal propagates from the lower layer to the upper layer is greatly improved by alternately inserting the coupling layers performing the coupling function into other layers to form a laminated structure. can do. As a result, there is an excellent advantage that an active integrated antenna capable of radiating large power with extremely good coupling characteristics can be formed. Further, when a signal input from a lower layer is propagated to an upper layer, there is an extremely excellent advantage that the signal can be propagated with better coupling characteristics. In particular, the amplification layer 300
In the relationship between the third coupling layer 600 and the third coupling layer 600, one of the third slot portions 601 and 601 returns a part of the input signal to the lower C-shaped strip line 701, which is a so-called feedback type. There is also the very good advantage that the oscillator can be composed of two layers with a small thickness.

Further, by providing the radiation layer 100 provided with the patch antenna section 101 as the uppermost functional layer, the radiation angle can be further narrowed, so that better beam characteristics can be obtained. There is also an epoch-making advantage that large power can be transmitted very efficiently.

Next, in the invention of claim 13,
In the description, the third slot portions 601, 601 are:
By providing an active integrated antenna arranged so as to intersect with the end of the microstrip line of the staggered open end 701b, the coupling degree is further improved in addition to the extremely excellent effects and advantages according to the invention of claim 12. As a result, there is an extremely excellent advantage that power can be transmitted with better coupling characteristics. In particular, even with extremely weak transmission power, radiant energy can be transmitted at a target frequency in a sharp spectrum without spreading radiant energy in an extra wavelength band, and power transmission can be performed extremely efficiently. There is also an advantage.

Next, according to the fourteenth aspect of the present invention,
Or 13, wherein the staggered open end 701b
Of the microstrip line 701 is approximately λg /
The active integrated antenna having the length of 4 overlaps, in addition to the extremely excellent effect according to the twelfth or thirteenth aspect, can further bring the oscillation frequency closer to the resonance point. As a result, there is an extremely excellent advantage that oscillation can be continued at a stable oscillation frequency and design becomes easy.

Next, according to the fifteenth aspect, the amplifying layer 300 having the amplifying means 301a having the FET, the radiating layer 100 for radiating a signal input from the amplifying layer 300 as an electromagnetic wave, and the amplifying layer 300 Bonding layer 6 which is disposed below and has third slot portions 601, 601
00 and a first coupling layer 200 disposed between the amplifying layer 300 and the radiation layer 100 and having first slot portions 201 and 201 are formed as a laminated structure. On its back surface, a part of both ends of the microstrip line is staggered open end 701b in a substantially C-shape such that they are staggered while maintaining a minute interval.
An active integrated antenna array comprising a plurality of two-dimensionally arranged active integrated antennas provided with a C-shaped strip line 701 formed with slabs is provided as an active integrated antenna array.
An active integrated antenna array P having a structure in which a plurality of active integrated antennas A having excellent effects and advantages according to the present invention are arranged. as a result,
Even in an SPS2000 system that needs to transmit large power by electromagnetic waves, there is an extremely excellent effect that the antenna can be used as a space tener that can efficiently radiate the same amplitude and the same phase.

Further, since the power combining at the time of power transmission is not performed by the active integrated antenna array of the present invention, but is performed in the space to which the power is radiated, the power loss at the time of power combining can be almost ignored. Therefore, there is also an extremely excellent advantage that the generated heat can be suppressed at each stage as compared with the related art.

Next, in the sixteenth aspect of the present invention, an oscillation layer 700 for generating a carrier signal, a modulation layer 500 for modulating a carrier signal input from the oscillation layer 700, and an input from the modulation layer 500 Amplifying layer 300 for amplifying a signal
The first coupling layer 200 having the slot portions 201, 201 is provided above the amplification layer 300, and the second coupling layer 400 having the slot portions 401, 401 is provided with the modulation layer 500 and the amplification layer 300. And an active integrated antenna A provided between the oscillation layer 700 and the modulation layer 500 so that the third coupling layer 600 having the slot portions 601 and 601 is provided between the oscillation layer 700 and the modulation layer 500. A thin plate active integrated antenna having a layered structure can be formed. As a result, an extremely thin and lightweight thin plate antenna can be formed, so that it has an epoch-making effect that it can be suitably applied to a system such as the SPS2000 system that transmits high power. .

More specifically, even if the functional layer composed of one dielectric slab substrate having a thickness of about 0.7 mm is formed as a lamination structure as the oscillation layer 700, the modulation layer 500, the amplification layer 300, and the radiation layer 100, the entire structure can be obtained. Is 0.7 mm × 4 sheets = 2.
It is 8 mm, and an extremely thin plate-shaped active integrated antenna can be formed. As a result, the total weight can be dramatically reduced compared to the conventional art, so that a large amount of the active integrated antenna of the present invention can be transferred to space at a time, and the power generated by the power generation satellite of the SPS2000 system can be obtained. Can be suitably used as a space tenor for transmitting the signal to the ground.

Next, according to the seventeenth aspect of the present invention, the amplifying layer 300 having the amplifying means 301a provided with the FET and the third slot portion 60 disposed below the amplifying layer 300 are provided.
A coupling layer 600 having a first coupling layer
00 and the first slot 20
The first coupling layer 200 having the first and second coupling layers 201 and 201 is formed as a laminated structure, and the third coupling layer 600 has a rear surface on which a part of both ends of the microstrip line is staggered while maintaining a small interval. C-shaped stripline 7 having a substantially C-shaped staggered open end 701b
By using the active integrated antenna A ′ provided with 01, a thin plate-shaped active integrated antenna having a stacked structure of functional layers configured for each function can be configured. As a result, an extremely thin and lightweight thin plate antenna can be formed, so that it has an epoch-making effect that it can be suitably applied to a system such as the SPS2000 system that transmits high power. .

More specifically, even when a functional layer composed of one dielectric slab substrate having a thickness of about 0.7 mm is formed into a laminated structure as the amplification layer 300 and the radiation layer 100, the overall thickness is 0.7 mm × 4. The number of sheets is 2.8 mm, and an extremely thin plate-shaped active integrated antenna A ′ can be formed even when a laminated structure is formed by inserting a coupling layer between them.
As a result, the total weight can be dramatically reduced as compared with the prior art, so that a large amount of the active integrated antenna of the present invention can be transferred to outer space at once, and the SPS2
000 system can be suitably used as a space tener for transmitting the power generated by the power generation satellite to the ground.

Further, the coupling coefficient when a signal propagates from the lower layer to the upper layer is greatly improved by alternately inserting the coupling layers performing the coupling function into other layers to form a laminated structure. can do. As a result, there is an excellent advantage that an active integrated antenna A ′ that can radiate large power with extremely good coupling characteristics can be formed. Further, when a signal input from a lower layer is propagated to an upper layer, there is an extremely excellent advantage that the signal can be propagated with better coupling characteristics. In particular, the amplification layer 3
In the relationship between the third coupling layer 600 and the third coupling layer 600, one of the third slot portions 601 and 601 causes a part of the input signal to be fed back to the lower C-shaped stripline 701, that is, a so-called feedback. There is also a very great advantage that the type oscillator can be composed of two layers having a small thickness.

[Brief description of the drawings]

FIG. 1A is a structural view of a unit cell. FIG. 1B is a cross-sectional view of a radiation layer taken along line XX.

FIG. 2 is a basic structural diagram of an active integrated antenna of the present invention.

FIG. 3 is a circuit diagram showing an example of a power amplification unit including an FET which may be applied to an amplification layer or a modulation layer of an active integrated antenna according to the present invention.

FIG. 4 shows the S of the power amplifier that may be applied to the present invention.
Graph showing parameter measurement results

FIG. 5 is a graph showing input / output power characteristics of a power amplification unit having a single FET which may be applied to the present invention;

FIG. 6 is a graph showing a measurement result of a noise characteristic of a power amplification unit including an FET.

FIG. 7A is a circuit configuration diagram of amplifying means in the active integrated antenna of the present invention; FIG. 7B is a schematic plan view of a radiation layer in the active integrated antenna of the present invention;

8A is a graph showing a simulation result in the case of a two-layer structure including a first coupling layer and an amplification layer. FIG. 8B is a graph showing a radiation layer including a radiation layer, a first coupling layer, and an amplification layer. Shows a simulation result in the case of a three-layer structure without a patch antenna unit. (C) is composed of a radiation layer, a first coupling layer and an amplification layer, and the radiation layer is provided with a patch antenna unit. Graph showing simulation results for a three-layer structure

FIG. 9 is a graph showing a change in S parameter due to the simulation of the integrated antenna shown in FIG.

FIG. 10 is a circuit configuration diagram showing a connection state of an amplification layer when the active integrated antenna of the present invention is arranged in an array structure of two rows and two columns.

FIG. 11 is a perspective view of an active integrated antenna array of the present invention.

12A is a graph showing characteristics of return loss in a unit cell. FIG. 12B is an antenna pattern graph of a unit cell in an E plane. FIG. 12C is an antenna pattern graph of a unit cell in an H plane.

13A is an antenna pattern graph of an active integrated antenna array having an array structure of 2 rows and 2 columns on an E plane. FIG. 13B is an antenna of an active integrated antenna array having an array structure of 2 rows and 2 columns on an H plane. Pattern graph

14A is a schematic plan view when two active integrated antenna arrays each having an array structure of 2 rows and 2 columns are connected in a row on an E plane. FIG. 14B is an active integrated antenna of FIG. Array antenna pattern graph

FIG. 15A shows an active integrated antenna array having an array structure of two rows and two columns on the E plane, and two rows and two columns.
(B) is an antenna pattern graph of the active integrated antenna array of (A) on the H plane when arranged in a horizontal row plane.

FIG. 16A is a schematic view of a stacked structure of an active integrated antenna according to a second embodiment of the present invention, and FIG. 16B is a schematic bottom view of a third coupling layer.

FIG. 17 is an enlarged view of a main part showing, in an enlarged manner, an arrangement relationship between a staggered open end and a third slot in the second embodiment of the present invention;

FIG. 18A is a view showing a third embodiment according to the second embodiment of the present invention;
Modified example of slot portion (B) is a modified example of the third slot portion in the second embodiment of the present invention.

FIG. 19A is a measurement graph showing an antenna pattern on an E plane among measurement results according to the second embodiment of the present invention. FIG. 19B is a measurement graph showing an antenna pattern on an H plane among measurement results according to the second embodiment of the present invention. Measurement graph showing antenna pattern

FIG. 20 is a measurement graph of a received power spectrum according to the second embodiment of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 radiation layer 200 first coupling layer 201 slot section 300 amplification layer 301 a first power amplification section 400 second coupling layer 401 slot section 500 modulation layer 501 a second power amplification section 600 third Coupling layer 601 Slot part 700 Oscillation layer 701 C-shaped strip line 701b Staggered open end A A Active integrated antenna A 'Active integrated antenna P Active integrated antenna array

Claims (17)

[Claims] An oscillation layer for generating a carrier signal, a modulation layer for modulating a carrier signal input from the oscillation layer, an amplification layer for amplifying a signal input from the modulation layer,
A radiation layer for radiating a signal input from the amplification layer as an electromagnetic wave, wherein each of the layers has a laminated structure. 2. The method according to claim 1, wherein:
An active integrated antenna comprising an amplifying means provided with an FET. 3. An active integrated antenna according to claim 1, wherein said modulation layer is provided with amplification means having an FET. 4. The modulation layer according to claim 1, wherein a first coupling layer having a slot portion is provided between the amplification layer and the radiation layer, and a second coupling layer having a slot portion is provided with the modulation layer. A third portion provided between the first and second amplifying layers and having a slot portion;
An active integrated antenna comprising a coupling layer provided between the oscillation layer and the modulation layer. 5. The active integrated antenna according to claim 1, wherein a plurality of power amplifiers are provided in the amplification layer. 6. The slot according to claim 4, wherein the number of the slot portions is two for each coupling layer, and the two slot portions are arranged in parallel at a predetermined distance from each other. Active integrated antenna. 7. The slot according to claim 4, 5 or 6, wherein the first coupling layer, the second coupling layer, and the third coupling layer are arranged in a longitudinal direction of each slot provided in each coupling layer. Are arranged orthogonally to each other. 8. An oscillation layer for generating a carrier signal, a modulation layer for modulating a carrier signal input from the oscillation layer, an amplification layer for amplifying a signal input from the modulation layer,
A radiation layer that radiates a signal input from the amplification layer as an electromagnetic wave, an amplification unit including an FET is provided in one of the amplification layer and the modulation layer, and a third coupling layer having a slot portion is provided. A second coupling layer having a slot portion is provided between the oscillation layer and the modulation layer, a second coupling layer having a slot portion is disposed between the modulation layer and the amplification layer, and a first coupling layer having a slot portion is disposed between the amplification layer and the radiation layer. An active integrated antenna array, comprising: a plurality of active integrated antennas provided between a plurality of layers and each of which has a stacked structure in a two-dimensional manner. 9. The active integrated antenna array according to claim 8, wherein a plurality of power amplification units are provided in the amplification layer. 10. The method according to claim 8, wherein the number of the slot portions is two for each coupling layer, and the two slot portions are arranged in parallel at a predetermined distance from each other. Active integrated antenna array. 11. The method according to claim 8, 9 or 10,
The active integration, wherein the first coupling layer, the second coupling layer, and the third coupling layer are arranged such that the longitudinal directions of the slots provided in the coupling layers are orthogonal to each other. Antenna array. 12. An amplifying layer having amplifying means provided with an FET, a radiation layer for radiating a signal input from the amplifying layer as an electromagnetic wave, a third layer disposed below the amplifying layer, and
A third coupling layer having a slot portion, and a first coupling layer disposed between the amplification layer and the radiation layer and having a first slot portion are formed as a laminated structure, wherein the third coupling layer comprises: Active integration characterized in that a C-shaped strip line on the back surface of which a part of both ends of the microstrip line is formed with a substantially C-shaped staggered open end portion which is staggered with each other while maintaining a minute interval. antenna. 13. The active integrated antenna according to claim 12, wherein the third slot portion is disposed so as to intersect the end of the microstrip line at the staggered open end. 14. The active integrated antenna according to claim 12, wherein both ends of the microstrip line at the staggered open end are overlapped by a length of approximately λg / 4. 15. An amplifying layer having amplifying means provided with an FET, a radiating layer for radiating a signal input from the amplifying layer as an electromagnetic wave, and a third layer disposed below the amplifying layer.
A third coupling layer having a slot portion, and a first coupling layer disposed between the amplification layer and the radiation layer and having a first slot portion are formed as a laminated structure, wherein the third coupling layer comprises: An active integrated antenna having a C-shaped strip line having a substantially C-shaped staggered open end portion in which a part of both ends of the microstrip line is staggered with each other at a small interval on the back surface thereof, An active integrated antenna array characterized by being arranged in a plurality. 16. A slot section, comprising: an oscillation layer for generating a carrier signal; a modulation layer for modulating a carrier signal input from the oscillation layer; and an amplification layer for amplifying a signal input from the modulation layer. A first coupling layer having a slot portion is provided above the amplification layer, a second coupling layer having a slot portion is provided between the modulation layer and the amplification layer, and a third coupling layer having a slot portion is provided in the oscillation layer. An active integrated antenna, provided between the active layer and the modulation layer. 17. An amplifying layer having amplifying means provided with an FET, a third coupling layer disposed below the amplifying layer and having a third slot portion, disposed above the amplifying layer, and A first coupling layer having a first slot portion is formed as a laminated structure, and the third coupling layer has a substantially rear surface on its back surface in which a part of both ends of the microstrip line is staggered while maintaining a small interval. An active integrated antenna comprising a C-shaped strip line having a C-shaped staggered open end.