JP2001121144A - Treatment apparatus for chemical machining polish waste water - Google Patents
Treatment apparatus for chemical machining polish waste waterInfo
- Publication number
- JP2001121144A JP2001121144A JP30437299A JP30437299A JP2001121144A JP 2001121144 A JP2001121144 A JP 2001121144A JP 30437299 A JP30437299 A JP 30437299A JP 30437299 A JP30437299 A JP 30437299A JP 2001121144 A JP2001121144 A JP 2001121144A
- Authority
- JP
- Japan
- Prior art keywords
- water
- activated carbon
- waste water
- membrane
- cmp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Separation Using Semi-Permeable Membranes (AREA)
- Removal Of Specific Substances (AREA)
- Water Treatment By Sorption (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体基板或いは該
基板上に形成された被膜を研磨（化学機械研磨（ＣＭ
Ｐ））した際に排出されるＣＭＰ排水の処理装置に関す
る。The present invention relates to polishing a semiconductor substrate or a film formed on the substrate (chemical mechanical polishing (CM)).
P)) The present invention relates to a device for treating CMP wastewater discharged at the time of performing the above.
【０００２】[0002]
【従来の技術】半導体の製造工程には、半導体基板又は
基板上に形成されたシリコン酸化膜等の被膜の表面を平
坦化するために、研磨剤を用いて該表面を化学機械研磨
（ＣＭＰ）する工程がある。2. Description of the Related Art In a semiconductor manufacturing process, in order to flatten the surface of a semiconductor substrate or a film such as a silicon oxide film formed on the substrate, the surface is subjected to chemical mechanical polishing (CMP) using an abrasive. There is a step to do.
【０００３】このＣＭＰに用いられる研磨剤としてのＣ
ＭＰスラリーにはシリカ系とメタル系とがあり、シリカ
系ではコロイダル（又はフュームド）シリカ（Ｓｉ
Ｏ２）が、また、メタル系ではアルミナ（Ａｌ２Ｏ３）
や酸化セリウム（ＣｅＯ２）等がそれぞれ研磨粒子とし
て用いられている。これらの研磨粒子はＣＭＰスラリー
中に約１０〜２０重量％含有されている。[0003] C as an abrasive used in this CMP
MP slurries include silica-based and metal-based slurries, and colloidal (or fumed) silica (Si
O 2 ), and alumina (Al 2 O 3 )
And cerium oxide (CeO 2 ) are used as abrasive particles. These abrasive particles are contained in the CMP slurry in an amount of about 10 to 20% by weight.
【０００４】このＣＭＰプロセス後は、基板上に残留す
るＣＭＰスラリーを除去するために、スラリー使用量の
約１００倍量の超純水（又は洗浄薬剤を含んだ超純水）
で洗浄する。After this CMP process, in order to remove the CMP slurry remaining on the substrate, ultrapure water (or ultrapure water containing a cleaning agent) is used in an amount of about 100 times the used amount of the slurry.
Wash with.
【０００５】従って、この研磨工程からは、研磨粒子や
研磨屑（研磨粒子や研磨バッドが研磨中に破砕されたも
の、或いは、基板又は基板上の被膜から研磨により削り
取られたもの）等を含むＣＭＰ排水が大量に排出され
る。[0005] Therefore, from this polishing step, abrasive particles and polishing debris (polishing particles and polishing pads are crushed during polishing, or those obtained by polishing from a substrate or a coating film on a substrate) are included. A large amount of CMP wastewater is discharged.
【０００６】なお、ＣＭＰ排水には、ＣＭＰスラリーに
由来する過酸化水素（Ｈ２Ｏ２）が含まれている場合が
ある。また、ＣＭＰ処理に続いて行われる、ＣＭＰスラ
リーを取り除くための洗浄工程において、Ｈ２Ｏ２を含
む洗浄水が使用されるため、この洗浄排水を含むＣＭＰ
排水にもＨ２Ｏ２が含まれることとなる。[0006] In some cases, the CMP waste water contains hydrogen peroxide (H 2 O 2 ) derived from the CMP slurry. Further, in the cleaning step performed after the CMP treatment for removing the CMP slurry, the cleaning water containing H 2 O 2 is used.
H 2 O 2 is also contained in the waste water.
【０００７】このＣＭＰ排水は、研磨粒子や研磨屑由来
の微粒子、更にはＨ２Ｏ２を含むこと以外は、その水質
は良好なものであるため、この微粒子とＨ２Ｏ２を除去
した後、回収水として、前処理系、一次純水製造系及び
二次純水製造系（サブシステム）からなる超純水製造シ
ステムの一次純水製造系に送られ、前処理系の処理水と
共に処理され、再利用されている。[0007] The CMP wastewater has good water quality except that it contains abrasive particles and fine particles derived from polishing dust, and further contains H 2 O 2. Therefore, after removing these fine particles and H 2 O 2 , As collected water, sent to the primary pure water production system of the ultrapure water production system consisting of the pretreatment system, primary pure water production system and secondary pure water production system (subsystem), and treated with the treated water of the pretreatment system And have been reused.
【０００８】従来、このようなＣＭＰ排水の処理方法と
しては、予めＣＭＰ排水中のＨ２Ｏ ２を分解除去した
後、懸濁物質（ＳＳ）を分離除去する方法が採用されて
おり、特開平９−１１７７６３号公報には、Ｈ２Ｏ２を
Ｈ２Ｏ２分解酵素で予め分解除去した後、高分子膜でＳ
Ｓを膜分離する方法が提案されている。この方法では、
Ｈ２Ｏ２で高分子膜が劣化するのを防止するために、予
めＨ２Ｏ２を除去した後、膜分離を行っている。Conventionally, such a method of treating CMP wastewater has
In advance, H2O 2Was disassembled and removed
Later, a method of separating and removing suspended substances (SS) was adopted.
Japanese Patent Application Laid-Open No. Hei 9-117763 discloses H2O2To
H2O2After preliminarily decomposing and removing with a decomposing enzyme, S
A method for membrane separation of S has been proposed. in this way,
H2O2To prevent polymer film from deteriorating
H2O2After the removal, membrane separation is performed.
【０００９】なお、Ｈ２Ｏ２は、活性炭を用いて分解除
去することもできる。この場合、粒状活性炭を充填した
活性炭塔に通水すると、塔内にＳＳが蓄積され、通水不
能となることから、粉末活性炭が用いられる。更に、Ｈ
２Ｏ２は過硫酸塩等で分解除去することもできる。[0009] H 2 O 2 can also be decomposed and removed using activated carbon. In this case, when water is passed through an activated carbon tower filled with granular activated carbon, SS accumulates in the tower and water cannot be passed. Therefore, powdered activated carbon is used. Furthermore, H
2 O 2 can also be decomposed and removed with a persulfate or the like.
【００１０】また、ＳＳの分離除去には凝集・砂濾過法
も採用可能である。For the separation and removal of SS, a flocculation / sand filtration method can be adopted.
【００１１】[0011]
【発明が解決しようとする課題】特開平９−１１７７６
３号公報に記載される方法のように、Ｈ２Ｏ２を予め分
解除去した後ＳＳを膜分離して除去する従来の方法で
は、膜面にスライムが急激に付着成長して膜フラックス
が低下するため、長期間連続通水することが不可能であ
った。加えて、分離膜として有機膜を用いた場合には、
コロイダルシリカ等のＳＳにより膜面が摩耗し、長期間
連続使用すると、膜が破断する恐れがあった。更に、Ｃ
ＭＰ排水にはコロイダルシリカ等の研磨粒子の安定化の
ために研磨スラリーに配合されたアルコールや界面活性
剤等の有機成分が含有されている場合もあるが、これら
の有機成分を除去することができないという不具合もあ
った。Problems to be Solved by the Invention
In the conventional method of removing H 2 O 2 in advance by decomposing and removing H 2 O 2 and then removing SS by membrane separation as in the method described in Japanese Patent Publication No. 3 (1999), the slime adheres and grows rapidly on the film surface to reduce the film flux. Therefore, it was impossible to continuously supply water for a long period of time. In addition, when an organic membrane is used as the separation membrane,
The film surface was worn by SS such as colloidal silica, and there was a risk that the film would break if used continuously for a long period of time. Further, C
MP wastewater may contain organic components such as alcohol and surfactant mixed in the polishing slurry to stabilize abrasive particles such as colloidal silica, but it is necessary to remove these organic components. There was also a problem that it was not possible.
【００１２】一方、凝集・砂濾過によるＳＳの分離で
は、膜フラックスの低下や膜劣化の問題はないが、ＳＳ
微粒子が濾過水中にリークし、ＳＳを高度に分離除去す
ることができない。[0012] On the other hand, in the separation of SS by coagulation and sand filtration, there is no problem of a decrease in membrane flux or membrane deterioration.
Fine particles leak into the filtered water and SS cannot be separated and removed to a high degree.
【００１３】また、Ｈ２Ｏ２の分解除去に際しても、酵
素や過硫酸塩による方法では、処理水を回収水として再
利用する場合、酵素や過硫酸塩が超純水製造システムの
負荷となることから好ましくない。[0013] Also, in the method of decomposing and removing H 2 O 2, in the method using enzymes or persulfates, when the treated water is reused as recovered water, the enzymes and persulfates impose a burden on the ultrapure water production system. This is not preferred.
【００１４】本発明は上記従来の問題点を解決し、研磨
粒子や研磨屑などのＳＳ及びＨ２Ｏ ２と、更には有機成
分をも含むＣＭＰ排水を効率的に処理することができ、
しかも、長期連続運転が可能なＣＭＰ排水の処理装置を
提供することを目的とする。The present invention solves the above-mentioned conventional problems and provides a polishing method.
SS and H such as particles and polishing dust2O 2And organic
Can effectively treat CMP wastewater containing water,
In addition, a CMP wastewater treatment device capable of long-term continuous operation is provided.
The purpose is to provide.
【００１５】[0015]
【課題を解決するための手段】本発明のＣＭＰ排水の処
理装置は、過酸化水素を含むＣＭＰ排水の処理装置にお
いて、該ＣＭＰ排水中の懸濁物質を分離する無機膜分離
装置と、該膜分離装置の透過水を粒状活性炭と接触させ
る活性炭塔とを有することを特徴とする。According to the present invention, there is provided an apparatus for treating a CMP wastewater containing hydrogen peroxide, comprising: an inorganic membrane separation device for separating suspended substances in the CMP wastewater; An activated carbon column for bringing permeated water of the separation device into contact with granular activated carbon.
【００１６】本発明においては、Ｈ２Ｏ２を含むＣＭＰ
排水を膜分離処理するため、Ｈ２Ｏ ２の殺菌作用で膜面
にスライムが付着、成長することはなく、長期に亘り膜
フラックスを高く維持して安定な膜分離処理を行ってＳ
Ｓを高度に除去することができる。しかも、分離膜とし
て化学的耐久性、機械的強度に優れた無機膜を用いるた
め、Ｈ２Ｏ２による劣化の問題もなく、また、コロイダ
ルシリカ等のＳＳにより膜が削り取られて摩耗すること
もなく、長期間使用可能である。In the present invention, H2O2CMP containing
H is used for membrane separation of wastewater.2O 2The bactericidal action of the membrane surface
The slime does not adhere to and grow on the
Maintaining a high flux and performing a stable membrane separation process
S can be removed to a high degree. Moreover, as a separation membrane
The use of an inorganic film with excellent chemical durability and mechanical strength
H2O2No degradation problems due to colloidal
The film is scraped off by SS such as Lusilica and worn.
No, it can be used for a long time.
【００１７】このように無機膜分離装置でＳＳを除去し
た水を次いで活性炭塔に通水して粒状活性炭で処理する
ことにより、Ｈ２Ｏ２を効率的に分解除去すると共に、
有機成分も吸着除去することができるため、著しく高水
質の処理水を得ることができる。The water from which SS has been removed by the inorganic membrane separation apparatus is then passed through an activated carbon tower and treated with granular activated carbon, whereby H 2 O 2 is efficiently decomposed and removed.
Since organic components can also be adsorbed and removed, treated water of extremely high quality can be obtained.
【００１８】[0018]
【発明の実施の形態】以下に本発明の実施の形態を詳細
に説明する。Embodiments of the present invention will be described below in detail.
【００１９】図１は本発明のＣＭＰ排水の処理装置の実
施の形態を示す系統図である。FIG. 1 is a system diagram showing an embodiment of an apparatus for treating CMP waste water according to the present invention.
【００２０】図１の方法では、ＣＭＰ排水を受水槽１を
経てポンプＰによりまずセラミックフィルタ２等の無機
膜分離装置に通水して、ＣＭＰ排水中のＳＳを分離除去
する。In the method of FIG. 1, the CMP wastewater is first passed through a water receiving tank 1 by a pump P to an inorganic membrane separation device such as a ceramic filter 2 to separate and remove SS in the CMP wastewater.
【００２１】このＳＳ除去に用いる膜の材質は、無機膜
であれば良く、セラミックの他、焼結金属膜等を用いる
ことができる。また、無機膜分離装置の膜形式（平膜、
中空糸、管状など）、給水方法（加圧式、吸引式）、膜
孔径（精密濾過膜、限外濾過膜）等には特に制限はな
く、要求水質や処理効率等に応じて任意に決定される。The material of the film used for removing SS may be an inorganic film, and may be a sintered metal film or the like in addition to ceramic. In addition, the membrane type (flat membrane,
There are no particular restrictions on the water supply method (pressurized type, suction type), membrane pore size (microfiltration membrane, ultrafiltration membrane), etc., which are arbitrarily determined according to the required water quality and treatment efficiency. You.
【００２２】このセラミックフィルタ２等の無機膜分離
装置における膜分離処理において、ＣＭＰ排水中のＨ２
Ｏ２による殺菌作用で膜面へのスライムの付着成長は防
止され、膜フラックスは高く維持される。また、膜が無
機膜であることから、Ｈ２Ｏ ２による劣化やＳＳによる
摩耗の問題もない。Inorganic membrane separation such as this ceramic filter 2
In the membrane separation process in the device, H2
O2Prevents slime from adhering to the membrane surface
Shut off and the membrane flux is kept high. Also, no film
H2O 2Deterioration due to SS or due to SS
No wear problems.
【００２３】このセラミックフィルタ２等の無機膜分離
装置の透過水は次いで活性炭塔３に通水され、濃縮水は
排水として系外へ排出される。The permeated water from the inorganic membrane separation device such as the ceramic filter 2 is then passed through the activated carbon tower 3, and the concentrated water is discharged out of the system as waste water.
【００２４】活性炭塔３に充填する粒状活性炭の粒径に
は特に制限はないが、過度に小さ過ぎると通水抵抗が大
きくなり、過度に大き過ぎると接触面積が少なくなり、
Ｈ２Ｏ２分解効率が低下するため、１〜１００メッシュ
の範囲で適当な大きさのものを用いるのが好ましい。The particle size of the granular activated carbon packed in the activated carbon tower 3 is not particularly limited, but if it is too small, the water flow resistance increases, and if it is too large, the contact area decreases.
Since the H 2 O 2 decomposition efficiency is reduced, it is preferable to use one having an appropriate size in the range of 1 to 100 mesh.
【００２５】この活性炭塔３の通水方式は、下向流であ
っても上向流であっても良いが、固定床が形成され、接
触頻度（接触効率）が向上する点から、下向流通水とす
るのが好ましい。The water flow through the activated carbon tower 3 may be either a downward flow or an upward flow. However, since the fixed bed is formed and the frequency of contact (contact efficiency) is improved, the downward flow is performed. It is preferable to use circulating water.
【００２６】活性炭塔３では、Ｈ２Ｏ２の分解除去と共
に、有機成分の吸着除去が行われることから、著しく高
水質の処理水を得ることができる。In the activated carbon tower 3, since organic components are adsorbed and removed together with decomposition and removal of H 2 O 2 , treated water of extremely high quality can be obtained.
【００２７】この活性炭塔への通水ＳＶは、１ｈｒ−１
以上、特に１０〜５０ｈｒ−１とすることが、過酸化水
素の分解、差圧などの点から好ましい。The water SV of the activated carbon tower is 1 hr -1.
As described above, it is particularly preferable to set the pressure to 10 to 50 hr -1 from the viewpoint of decomposition of hydrogen peroxide, differential pressure and the like.
【００２８】なお、本発明で処理対象とするＣＭＰ排水
中に含まれる研磨剤の種類には特に制限はなく、シリカ
（コロイダルシリカ）系であっても、アルミナや酸化セ
リウム、酸化マグネシウム等のメタル系のいずれであっ
ても良い。The type of the abrasive contained in the CMP wastewater to be treated in the present invention is not particularly limited, and even if it is a silica (colloidal silica) type, it may be a metal such as alumina, cerium oxide or magnesium oxide. Any of the systems may be used.
【００２９】[0029]
【実施例】以下に実施例を挙げて本発明をより具体的に
説明する。The present invention will be described more specifically with reference to the following examples.
【００３０】実施例１ 下記水質のＣＭＰ排水を図１に示すＣＭＰ排水の処理装
置により１ｍ３／ｈｒの処理水量で処理した。Example 1 CMP wastewater having the following water quality was treated with a treated water amount of 1 m 3 / hr by the CMP wastewater treatment apparatus shown in FIG.
【００３１】〔ＣＭＰ排水水質〕 ＳＳ：１００ｐｐｍ Ｈ２Ｏ２：３００ｐｐｍ ＴＯＣ：２０００ｐｐｂ 受水槽１の容量は１ｍ３であり、セラミックフィルタ２
及び活性炭塔３としては次のようなものを用いた。セラ
ミックフィルタ２からは透過水０．９５ｍ３／ｈｒと濃
縮水０．０５ｍ３／ｈｒを得、濃縮水は系外へ排出し
た。また、活性炭塔３の通水ＳＶは１０ｈｒ−１とし
た。[CMP wastewater quality] SS: 100 ppm H 2 O 2 : 300 ppm TOC: 2000 ppb The capacity of the receiving tank 1 is 1 m 3 , and the ceramic filter 2
The following were used as the activated carbon tower 3. The ceramic filter 2 obtained as permeate 0.95 m 3 / hr of concentrated water 0.05 m 3 / hr, concentrated water is discharged out of the system. The water flow SV of the activated carbon tower 3 was set at 10 hr -1 .
【００３２】〔セラミックフィルタ〕 栗田工業（株）製セラミックフィルタ 分画：０．０２μｍ 設計フラックス：１ｍ３／ｍ２・日ａｔ２５℃[Ceramic filter] Ceramic filter manufactured by Kurita Water Industries Ltd. Fraction: 0.02 μm Design flux: 1 m 3 / m 2 · day at 25 ° C.
【００３３】〔活性炭塔〕 栗田工業（株）製粒状活性炭（石炭系）１０／３２メッ
シュを充填した下向流式活性炭塔 その結果、得られた処理水の水質は下記の通りであり、
回収水として十分な水質を有するものであった。[Activated carbon tower] A downflow activated carbon tower filled with granular activated carbon (coal-based) 10/32 mesh manufactured by Kurita Water Industries Ltd. As a result, the quality of the treated water obtained is as follows.
It had sufficient water quality as recovered water.
【００３４】〔処理水水質〕 ＳＳ：＜０．５ｐｐｍ Ｈ２Ｏ２：＜１ｐｐｍ ＴＯＣ：２０〜５０ｐｐｂ また、セラミックフィルタの膜フラックスの経時変化は
図２に示す通りであり、膜フラックス１ｍ３／ｍ２・日
を安定して得ることができることが確認された。[0034] [treated water quality] SS: <0.5ppm H 2 O 2 : <1ppm TOC: 20~50ppb addition, aging of the membrane flux of the ceramic filter is as shown in FIG. 2, films flux 1 m 3 / It was confirmed that m 2 · day could be stably obtained.
【００３５】[0035]
【発明の効果】以上詳述した通り、本発明のＣＭＰ排水
の処理装置によれば、ＣＭＰ排水を長期に亘り効率的に
処理して、ＳＳ、Ｈ２Ｏ２、ＴＯＣ等が高度に除去さ
れ、超純水製造システムの補給水として有効利用するこ
とができる高水質の処理水を安定に得ることができる。As described in detail above, according to the apparatus for treating CMP waste water of the present invention, the waste water of SS, H 2 O 2 , TOC, etc. is removed to a high degree by efficiently treating the CMP waste water for a long period of time. In addition, high-quality treated water that can be effectively used as makeup water in an ultrapure water production system can be stably obtained.
【図１】本発明のＣＭＰ排水の処理装置の実施の形態を
示す系統図である。FIG. 1 is a system diagram showing an embodiment of an apparatus for treating CMP waste water of the present invention.
【図２】実施例１における膜フラックスの経時変化を示
すグラフである。FIG. 2 is a graph showing a change with time of a film flux in Example 1.
１ 受水槽 ２ セラミックフィルタ ３ 活性炭塔 Reference Signs List 1 water receiving tank 2 ceramic filter 3 activated carbon tower
───────────────────────────────────────────────────── フロントページの続き (72)発明者 和田 雄一郎 東京都新宿区西新宿三丁目４番７号 栗田 工業株式会社内 Ｆターム(参考） 4D006 GA06 GA07 HA01 HA21 HA41 KA71 KB12 KD19 KE02P KE05P KE12P KE13P MB11 MB16 MC02 MC03X PA01 PB08 PB20 PB23 PB70 PC01 4D024 AA04 AB04 AB14 AB15 BA02 BB01 BC01 CA02 DA03 DA05 DB05 4D038 AA08 AB08 AB26 AB57 AB58 AB60 AB77 BA01 BA04 BA06 BB06 BB09 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Yuichiro Wada 3-4-7 Nishi-Shinjuku, Shinjuku-ku, Tokyo F-term in Kurita Industries Co., Ltd. 4D006 GA06 GA07 HA01 HA21 HA41 KA71 KB12 KD19 KE02P KE05P KE12P KE13P MB11 MB16 MC02 MC03X PA01 PB08 PB20 PB23 PB70 PC01 4D024 AA04 AB04 AB14 AB15 BA02 BB01 BC01 CA02 DA03 DA05 DB05 4D038 AA08 AB08 AB26 AB57 AB58 AB60 AB77 BA01 BA04 BA06 BB06 BB09
Claims (1)
において、該ＣＭＰ排水中の懸濁物質を分離する無機膜
分離装置と、該膜分離装置の透過水を粒状活性炭と接触
させる活性炭塔とを有することを特徴とするＣＭＰ排水
の処理装置。1. An apparatus for treating a CMP wastewater containing hydrogen peroxide, comprising: an inorganic membrane separator for separating suspended substances in the CMP wastewater; and an activated carbon tower for bringing permeated water from the membrane separator into contact with granular activated carbon. An apparatus for treating CMP wastewater, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30437299A JP3518445B2 (en) | 1999-10-26 | 1999-10-26 | CMP wastewater treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30437299A JP3518445B2 (en) | 1999-10-26 | 1999-10-26 | CMP wastewater treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001121144A true JP2001121144A (en) | 2001-05-08 |
| JP3518445B2 JP3518445B2 (en) | 2004-04-12 |
Family
ID=17932237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30437299A Expired - Fee Related JP3518445B2 (en) | 1999-10-26 | 1999-10-26 | CMP wastewater treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3518445B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003300070A (en) * | 2002-04-09 | 2003-10-21 | Ngk Insulators Ltd | Treatment method of metal-based cmp waste water |
| JP2008000653A (en) * | 2006-06-21 | 2008-01-10 | Japan Organo Co Ltd | Wastewater treatment method and arrangement |
| WO2013084855A1 (en) * | 2011-12-05 | 2013-06-13 | 栗田工業株式会社 | Method for treating water containing hydrogen peroxide |
| CN110605027A (en) * | 2018-06-14 | 2019-12-24 | 中国石油化工股份有限公司 | Alkaline cleaning solution, acidic cleaning solution and ultrafiltration membrane cleaning method |
-
1999
- 1999-10-26 JP JP30437299A patent/JP3518445B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003300070A (en) * | 2002-04-09 | 2003-10-21 | Ngk Insulators Ltd | Treatment method of metal-based cmp waste water |
| JP2008000653A (en) * | 2006-06-21 | 2008-01-10 | Japan Organo Co Ltd | Wastewater treatment method and arrangement |
| JP4722776B2 (en) * | 2006-06-21 | 2011-07-13 | オルガノ株式会社 | Wastewater treatment method and apparatus |
| WO2013084855A1 (en) * | 2011-12-05 | 2013-06-13 | 栗田工業株式会社 | Method for treating water containing hydrogen peroxide |
| JPWO2013084855A1 (en) * | 2011-12-05 | 2015-04-27 | 栗田工業株式会社 | Method for treating hydrogen peroxide-containing water |
| CN110605027A (en) * | 2018-06-14 | 2019-12-24 | 中国石油化工股份有限公司 | Alkaline cleaning solution, acidic cleaning solution and ultrafiltration membrane cleaning method |
| CN110605027B (en) * | 2018-06-14 | 2022-03-15 | 中国石油化工股份有限公司 | Alkaline cleaning solution, acidic cleaning solution and ultrafiltration membrane cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3518445B2 (en) | 2004-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101043863B1 (en) | Filtering Method for Colloid Solution | |
| JP2002331456A (en) | Recovering device of abrasive | |
| KR20040084857A (en) | Water treatment apparatus and water treatment method using the same | |
| KR100612815B1 (en) | Coagulant and preparation apparatus and preparation method thereof, and coagulation process apparatus and method for fluid | |
| JP2009135174A (en) | Polishing apparatus and method thereof, and polishing liquid recovering apparatus and method thereof | |
| JP2001121144A (en) | Treatment apparatus for chemical machining polish waste water | |
| JP4618073B2 (en) | Method and apparatus for recovering water from CMP wastewater containing high TOC | |
| JP4161389B2 (en) | Polishing wastewater treatment method and apparatus | |
| JPH10192851A (en) | Water purifying treatment apparatus | |
| JP4233485B2 (en) | Flocculant manufacturing apparatus and flocculant manufacturing method | |
| JP2647104B2 (en) | Method for treating wastewater discharged from semiconductor wafer manufacturing process | |
| JP4234806B2 (en) | Slurry separation method and apparatus | |
| JPH1133362A (en) | Recovery method and apparatus of polishing agent | |
| JP5891800B2 (en) | Glass polishing method | |
| JP3461514B2 (en) | Advanced water treatment system and method of starting advanced water treatment system | |
| JP2005021805A (en) | Method and system for treating waste water | |
| JP2005334992A (en) | Waste fluid treating device, waste fluid treating method, and manufacturing system for semiconductor device | |
| JPH11128919A (en) | Treatment of reverse osmosis membrane | |
| JPH07316846A (en) | Method for regenerating chemical and mechanical polishing solution | |
| JP2013237130A (en) | Method for recovering coolant | |
| JP4233484B2 (en) | Fluid coagulation treatment apparatus and coagulation treatment method using the same | |
| JPH11138162A (en) | Polishing waste water treating device | |
| JP2002016027A (en) | Abrasive material recovering device | |
| JP4534241B2 (en) | Abrasive recovery method | |
| JP2004290813A (en) | Water treatment apparatus and water treatment method using it |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040106 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040119 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 3518445 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080206 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090206 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090206 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100206 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110206 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110206 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120206 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120206 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130206 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130206 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140206 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |