JP2001105316A - Polishing solution recycling system for chemical- mechanical flattening device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a polishing solution recycling system capable of keeping the quality of the surface of semi-conductor wafer, or the like in a CMP device excellent for a long time by maintaining the nature of the polishing solution stable. SOLUTION: The above problems can be solved by a polishing solution recycling system of a CMP device provided with a filtration device, a temperature controlling means, and a washing means.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing liquid recycling system for a chemical mechanical flattening (hereinafter referred to as "CMP") apparatus provided with a filtration apparatus.

[0002]

2. Description of the Related Art The CMP technique is a technique for polishing and flattening an oxide film or a metal film on a surface of a workpiece such as a semiconductor wafer while supplying a polishing liquid comprising an abrasive and a polishing solution to a polishing cloth. is there. A feature of the CMP technique is that the surface of a semiconductor wafer or the like is flattened by a mechanical polishing effect by an abrasive and a chemical polishing effect by a polishing solution. In a CMP apparatus performed by such a CMP technique, polishing of an oxide film on a surface of a semiconductor wafer or the like is performed by using a fine abrasive of silica, ceria, or zirconia and an alkaline polishing solution of potassium hydroxide or ammonium hydroxide. Is used. On the other hand, for polishing a metal film on the surface of a semiconductor wafer or the like, a polishing liquid composed of an alumina-based fine abrasive and an acid-based polishing solution such as aqueous hydrogen peroxide, hydrogen fluoride, and sulfuric acid is used. As these abrasives, those having a particle size distribution of about 0.02 to 0.5 μm are preferably used. It is known that the planarization of a semiconductor wafer or the like performed by a CMP apparatus can be performed stably by appropriately managing such a polishing liquid.

[0003]

The polishing liquid includes an abrasive and a polishing solution, an oxide film or a metal film polished from the surface of a semiconductor wafer or the like, or a fiber of a polishing cloth (hereinafter referred to as "polishing"). Powder) is mixed in. for that reason,
The polishing liquid gradually cannot maintain the initial polishing performance, and cannot sufficiently polish the surface of the semiconductor wafer or the like, or the surface of the semiconductor wafer or the like is damaged by the polishing liquid mixed with the polishing powder. There was a sticky problem.

[0004] Further, since the liquid temperature of the polishing liquid is not controlled, there is another problem that when the liquid temperature exceeds a predetermined value (approximately 25 ° C), the processing speed increases and control becomes difficult.

SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems, and maintains the properties of a polishing liquid in a stable manner so that the quality of a processed surface of a semiconductor wafer or the like in a CMP apparatus can be maintained for a long period of time. The purpose is to provide a usage system.

[0006]

Hereinafter, the present invention will be described. In addition, in order to facilitate understanding of the present invention, reference numerals in the accompanying drawings are added in parentheses, but the present invention is not limited to the illustrated embodiment.

According to the first aspect of the present invention, there is provided a circulating apparatus (2, 2) for filtering substances to be polished other than the abrasive from the polishing liquid supplied to the CMP apparatus (1) and returning the same to the CMP apparatus (1).
4, 21, 5, 22, 3)
The object is solved by providing a polishing liquid reuse system for an MP apparatus.

According to the present invention, the polishing liquid supplied to the CMP apparatus (1) is circulated and used while being filtered, so that a polishing liquid having good properties can be stably supplied to the CMP apparatus.

According to a second aspect of the present invention, in the polishing liquid reuse system of the CMP apparatus according to the first aspect, there is provided a temperature management means for maintaining a temperature of the polishing liquid within a predetermined range. .

According to the present invention, when the polishing liquid is out of the predetermined temperature range, the temperature management means operates to always maintain the temperature of the polishing liquid within the predetermined range. State can be maintained.

According to a third aspect of the present invention, in the polishing liquid recycling system of the CMP apparatus according to the first aspect, the polishing liquid temperature control means for the polishing liquid is a polishing liquid tank provided in the polishing liquid circulation device. Jacket (2a) around 2)
And a device for causing a heat medium to flow through the jacket (2a) to exchange heat with the polishing liquid is provided.

According to the present invention, when the temperature of the polishing liquid is lower than a predetermined temperature, such as at the start of winter, or when the temperature of the polishing liquid is higher than the predetermined temperature due to processing heat or the like, Since the polishing liquid is heat-exchanged by a cooling medium or a heating medium flowing in a jacket (2a) provided around the tank (2) and is constantly maintained at a predetermined temperature,
The speed of the CMP processing can be controlled to maintain a stable processing state.

According to a fourth aspect of the present invention, in the polishing liquid reuse system of the CMP apparatus according to the first aspect, a cleaning means for cleaning a flow path of the polishing liquid in the circulation device is provided. I do.

According to the present invention, by operating the cleaning means provided in the polishing liquid circulating device, it is possible to remove the polishing powder deposited on the polishing liquid circulating device, particularly on the curved portion of the pipe. Therefore, it is possible to prevent the lump of the accumulated polishing powder from being mixed into the polishing liquid and damaging the processed surface, and to prevent the polishing powder from accumulating in the circulation device and closing the polishing liquid pipe to prevent the circulation of the liquid. Thus, the polishing liquid circulation device can be kept in a clean state at all times, so that the surface quality of the processed surface of a semiconductor wafer or the like in the CMP device can be kept good for a long time.

According to a fifth aspect of the present invention, in the polishing liquid reuse system of the CMP apparatus according to the first aspect, the cleaning means performs mixing and injection of water and gas into the polishing liquid flow path. A bubbling tank (16) is provided.

According to the present invention, since the mixed flow of water and gas is injected into the polishing liquid flow path with turbulence, the polishing liquid circulation device can be more effectively cleaned, and the CMP can be performed.
The processing surface quality of a semiconductor wafer or the like in the apparatus can be kept good for a long period of time.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows the overall configuration of a polishing liquid recycling system of a CMP apparatus provided with a polishing liquid circulation device.
The polishing liquid circulation device includes a polishing liquid tank 2, a lead-out filter 4 provided in the polishing liquid tank, and a lead-out filter 4 at one end, and supplies the polishing liquid from the polishing liquid tank 2 to the CMP apparatus 1. The polishing liquid supply line 21, the pump 5, the flow meter 6, the flow control valve 7, the temperature sensor 8, the PH sensor 9 provided in the polishing liquid supply line 21, and the polishing liquid from the CMP apparatus 1 to the polishing liquid tank 2. A polishing liquid return line 22 to be refluxed, an introduction filter 3 provided at the end of the polishing liquid return line 22 and in the polishing liquid tank 2,
Line valves 11b and 11c provided as required
And are provided.

The polishing liquid stored in the polishing liquid tank 2 is passed through a polishing liquid supply line 21 by the pump 5 and subjected to CMP.
It is supplied to the device 1. The polishing liquid used for polishing in the CMP apparatus 1 is returned to the polishing liquid tank 2 via the polishing liquid return line 22. The flow rate of the polishing liquid is controlled by a flow meter 6 and a flow control valve 7 provided in the circulation device, and a predetermined amount is always supplied to the CMP device 1.

The polishing liquid replenishing line 20 is provided independently of the polishing liquid circulating device. A polishing liquid replenishing port 19 is provided at one end of the line, and the other end is led to the polishing liquid tank 2. . The amount of the polishing liquid can be constantly monitored by a liquid level gauge (not shown) provided in the polishing liquid tank 2, and a new polishing liquid is supplied from the polishing liquid supply port 19 as needed, and the polishing liquid is supplied. The polishing liquid is supplied to the polishing liquid tank 2 through the liquid supply line 20.

Further, a pH sensor 9 is provided in the circulation device so that the PH value of the polishing liquid can be constantly monitored. The PH sensor 9 can be connected to an alarm (not shown) or the like, if necessary, so as to notify an operator when a PH out of a predetermined range is detected. Therefore, when the property (PH) of the polishing liquid deviates from the predetermined value, the polishing liquid can be immediately replaced.

Further, the polishing liquid tank 2 is provided with a tank drain valve 14 and a tank drain outlet 15 as drain means at a lower portion thereof.
Part or all of the polishing liquid can be discharged out of the tank.

As described above, in the polishing liquid circulation device, the polishing liquid tank 2, the polishing liquid supply line 21, the pump 5, the flow meter 6, the flow control valve 7, and the polishing liquid return line 22 are provided. By providing the valves 11a, 11b, and 11c, a predetermined amount of the polishing liquid is always supplied while being circulated to the CMP apparatus, so that stable CMP processing can always be ensured.

Further, a PH sensor 9 is provided in the polishing liquid circulation device.
A tank drain valve 14, a tank drain outlet 15, a polishing liquid replenishing port 19 and a polishing liquid replenishing line 20 are provided as drain means, so that a change in the polishing liquid properties can be monitored, and based on the result, the polishing liquid can be monitored. Accordingly, the polishing liquid can be easily replenished and exchanged, so that a polishing liquid having good and stable properties can always be supplied to the CMP apparatus.

Further, an introduction filter 3 and an extraction filter 4 are provided inside the polishing liquid tank 2 to filter polishing powder in a stepwise manner. That is, the introduction filter 3 provided at the outlet of the polishing liquid return line 22 captures most of the polishing powder and returns the clean polishing liquid to the tank 2, while the lead-out filter provided at the entrance of the polishing liquid supply line 21. The filter 4 performs more precise filtration, and cleans the polishing liquid with CM.
Supply to P device 1. For these filtration means,
This will be described later in detail with reference to FIG.

The polishing liquid tank 2 is provided with a cooling means using water. When information indicating that the temperature is higher than a specified temperature is received from a temperature sensor 8 provided in the circulation device, the tank cooling water valve 12 is turned on. The polishing liquid is released, the cooling water exchanges heat with the polishing liquid, and the polishing liquid is cooled to a predetermined temperature.

In the present embodiment, an example of cooling with water has been given. However, the present invention is not limited to this, and cooling means using ammonia or other refrigerants, heat using a cooling medium using oil or the like is used. Any cooling means such as replacement and air cooling by a radiator method can be used. The cooling device may be provided in any part of the circulation circuit, instead of being provided in the polishing liquid tank. Further, when the polishing liquid temperature is lower than a predetermined range, a heating medium such as oil and water is used by heating, or a coiled electric heater is provided in the polishing liquid tank to reduce the polishing liquid temperature to a predetermined range. You can also raise it.

Although the temperature sensor 8 is provided in the polishing liquid supply line 21 in the present embodiment, the present invention is not limited to this. For example, the temperature sensor 8 is provided in the polishing liquid tank 2. Is also good.

Since the temperature of the polishing liquid is always kept within a predetermined range by these temperature control means, the processing state can be controlled to be constant without increasing the processing speed of the CMP apparatus.

On the other hand, in the polishing liquid circulation device for the CMP apparatus, a cleaning bubbling tank 16 for line cleaning is provided connected to the polishing liquid supply line 20, the polishing liquid supply line 21, and the polishing liquid return line 22. Have been. The polishing powder in the polishing liquid usually returns to the polishing liquid tank 2 together with the polishing liquid, and is captured by the introduction filter 3 and the lead-out filter 4. However, as the time elapses, the flow rate of the polishing liquid is sufficient, especially when the work is stopped. Otherwise, it may accumulate on the curved portion of the pipe or the valve portion and hinder normal supply of the polishing liquid. Abrasives may also accumulate on the curved pipe portion and the valve portion with the passage of time.

To prevent this, the water supply port 17 and the gas supply port 18 are opened to supply water and gas to the bubbling tank 16 while opening the cleaning valves 10a, 10b or 10c as necessary. Bubbling tank 16
To supply a mixed jet into the polishing liquid circulation device. In this embodiment, when the cleaning valve 10a is opened, the polishing liquid supply line 20 is opened, when the cleaning valve 10b is opened, the polishing liquid supply line 21 is opened, and when the cleaning valve 10c is opened, The polishing liquid return lines 22 are respectively cleaned.

Although the purpose of cleaning can be achieved by using water or gas alone, it is desirable to use the above-mentioned water and gas for the cleaning means from the viewpoint of sufficient cleaning. In addition, from the viewpoint that the gas used for cleaning does not affect the polishing liquid and does not leave foreign matter in the circulation device, air or nitrogen gas that is dehumidified and cleaned by a filter or the like is preferably used. used. Furthermore, the inside of the polishing liquid circulation device piping can be coated with Teflon to prevent the polishing powder from being easily deposited and deposited, and to form a piping that can be easily cleaned by the above-mentioned cleaning even when the polishing powder is deposited.

By thus providing the main cleaning means to generate a turbulent flow in the apparatus to remove the deposited abrasive powder, the pipes and the like in the polishing liquid circulation apparatus are periodically cleaned, and the abrasive powder is locally deposited. A constant amount of polishing liquid is stably supplied to the CMP apparatus, and the generation of scratches on the surface of a semiconductor wafer or the like that occurs when the deposited polishing powder drops and is supplied to the CMP apparatus as it is. Can be prevented beforehand.

The circulating device shown in FIG. 1 is merely an example. For example, a filter may be provided outside the tank, or a centralized liquid supply system in which a plurality of CMP devices are combined with one polishing liquid circulating device. It is possible.

FIG. 2 is a schematic diagram showing an example of a filtration device provided inside the polishing liquid tank 2 constituting the polishing liquid circulation device shown in FIG. This filtration device is a filtration device that reuses the abrasive used in the CMP device,
It mainly includes an introduction filter 3 and a derivation filter 4.

The filtration device includes a polishing liquid tank 2 for temporarily storing a liquid to be filtered 24 made of a polishing liquid containing polishing powder, and a polishing liquid tank 2 provided in the polishing liquid tank 2 for filtering the polishing powder in the liquid to be filtered 24. It is at least constituted by an introduction filter 3 to be separated, and a lead-out filter 4 to further filter and separate the abrasive powder that could not be filtered and separated by the introduction filter 3.

Here, the polishing liquid comprises an abrasive and a polishing solution, and the polishing powder comprises an oxide film or a metal film polished from the surface of a semiconductor wafer or the like, or a fiber of a polishing cloth. After the polishing liquid is used in the CMP apparatus, it becomes the liquid to be filtered 24 containing the polishing powder.

The liquid to be filtered 24 is supplied to the polishing liquid tank 2 by the polishing liquid return line 22, and is injected into the introduction filter 3 from above by gravity. At this time, the abrasive powder mixed into the liquid to be filtered 24 is filtered and separated by the introduction filter 3, and the liquid to be filtered (hereinafter, referred to as “primary filtrate 25”) after most of the abrasive powder has been removed is in a tank. It is stored in 2. Primary filtrate 25 stored
Is sucked by the pump 5 provided in the polishing liquid supply line 21, and is filtered by the lead-out filter 4 attached to the tip of the polishing liquid supply line 21. And is discharged from the polishing liquid tank 2. The discharged secondary filtrate 26 can be used again as a polishing liquid for the CMP apparatus 1 or can be used as a polishing liquid for the CMP apparatus 1 after further fine filtration as described later. .

The abrasive in the liquid to be filtered 24 passes through the introduction filter 3 and the extraction filter 4 without being filtered and separated. Therefore, both the filter for introduction 3 and the filter for discharge 4 have a filtering action to the extent that they do not allow the abrasive powder to pass, and also have a filtering action to the extent that they allow the abrasive to pass through. Further, the polishing solution constituting the polishing solution,
The filter is appropriately selected depending on the type of film formed on a semiconductor wafer or the like to be polished, and those filters are made of a material having excellent chemical resistance so as not to be affected by such a polishing solution.

Next, the structures of the introduction filter 3 and the derivation filter 4 will be described.

FIG. 3 is a sectional view showing the structure of the introduction filter. The introduction filter 3 has at least one or more, preferably two or more mesh sheets having different mesh sizes, and as shown in FIG. 3, the first mesh provided on the downflow side of the liquid 24 to be filtered. The structure sheet 31, the second mesh structure sheet 32, the third mesh structure sheet 33, and the fourth mesh structure sheet 34 are arranged at predetermined intervals. Each of the mesh structure sheets 31,..., 34 is usually processed into a circular or cylindrical shape, and its outer peripheral portion is wound around a core material 36, and is fixed by being clamped from outside by a clamp 35.

Each of the mesh structure sheets 31,..., 34 has a role of filtering and separating the abrasive powder mixed in the liquid 4 to be filtered. Most of the abrasive powder is larger than the abrasive,
Further, many of them are aggregated to form large suspended matters, so that they can be easily filtered and separated by the respective network structure sheets 31,.

Each of the mesh structure sheets 31,..., 34 preferably has a smaller mesh size from the inflow side of the liquid 24 to be filtered. Each mesh structure sheet 31, ..., 34
The mesh display and the mesh size corresponding to the mesh display cannot be uniformly defined because they differ depending on the fiber diameter and the mesh shape of the mesh structure sheet. For example, the first mesh structure sheet 31 is 40 mesh (approximately 400 μm). age,
The second mesh sheet 32 is made of 65 mesh (about 260 μm
The third mesh structure sheet 33 can be configured with 75 mesh (corresponding to about 220 μm), and the fourth mesh structure sheet 34 can be configured with 75 mesh (corresponding to about 220 μm). At this time, the mesh size does not necessarily need to be sequentially increased, and the third mesh structure sheet 3 described above is not necessarily required.
Like the third and fourth mesh structure sheets 34, mesh structure sheets having the same mesh size may be provided.

As shown in FIG. 3, the mesh structure sheets are
It is preferable that they are arranged at predetermined intervals.
By doing so, each of the mesh structure sheets 31,.
No. 4 can collect a sufficient amount of polishing powder by filtration. The predetermined interval between the network structure sheets is appropriately set according to the size of the abrasive powder, the mesh size of the network structure sheet, the number of the network structure sheets, the amount of the abrasive powder collected in each network structure sheet, and the like.

The material of the mesh structure sheet is not particularly limited as long as it can withstand the polishing solution to be used, but usually, a material made of polypropylene, polyethylene or nylon can be used. Further, it is preferable that the core material 36 and the clamp 35 used for fixing each mesh structure sheet are also made of a material having similar chemical resistance.

Introducing filter 3 used in the present invention
In this method, the abrasive powder is filtered and separated stepwise by a network structure sheet having a different network size. That is, in the first network structure sheet 31, the substance to be polished having the largest size is filtered and separated, and in the second network structure sheet 32, the substance to be polished having passed through the first network structure sheet 31 is filtered and separated. The third mesh structure sheet 33 further includes a second mesh structure sheet 32.
The substances to be polished having different sizes are sequentially filtered and separated, such that the substances to be polished having passed through are filtered and separated.

As a result, the introduction filter 3 is capable of filtering and separating most of the substance to be polished by the network structure sheets 31,... When the abrasive particles constituting the abrasive are aggregated into a large lump, each of the mesh structure sheets 31,... You can do it. Therefore, almost all the abrasive particles can pass through the introduction filter 3.

FIG. 4 is a structural sectional view showing an example of the derivation filter. The lead-out filter 4 has a hollow cylindrical filter medium 41 obtained by folding a laminated structure sheet into a chrysanthemum flower shape. As holding members for holding the filter medium 41, an inner holding member 46, an outer holding member 47, and a lower side Holding member 4
2. An upper holding member 43 is provided. The lead-out filter 4 further filters and separates the abrasive powder mixed in the first filtrate 25 filtered by the above-described introduction filter 3, and removes the second filtrate 26 containing almost no abrasive powder. Has a role to supply.

The laminated structure sheet constituting the filter medium 41 has a filtering property that allows only a polishing liquid consisting of an abrasive and a polishing solution to pass therethrough, and allows filtration and separation of polishing powder. As a result, the abrasive powder still mixed in the first filtrate 25 filtered by the above-described introduction filter 3 is separated by filtration by the lead-out filter 4, and the second filtrate is almost free of the abrasive powder. 26.

It is preferable to use a nonwoven fabric formed by laminating fibers as the laminated structural sheet. Since the non-woven fabric is supplied in the form of a long sheet, the non-woven fabric is folded into a chrysanthemum-like shape to form a filter medium 41 having a large effective filtration surface area.
Can be processed. As the filtration performance of such a nonwoven fabric, for example, in the case of a polishing liquid containing an abrasive having a particle size distribution of about 0.02 to 0.5 μm and an average particle diameter of about 0.16 μm, at least the abrasive is passed, In addition, a nonwoven fabric capable of filtering and separating abrasive powder that could not be filtered and separated by the introduction filter 3 is selected and used. Usually, the filtration performance of non-woven fabrics depends on the density at which fibers are laminated,
Since the thickness differs depending on the characteristics such as the thickness of the lamination, the thickness of the fiber, and the surface condition, the optimum one can be appropriately selected and used according to the corresponding CMP apparatus.

The material of the laminated structure sheet is not particularly limited as long as it can withstand the polishing solution to be used, as in the case of the above-mentioned mesh structure sheet. A nonwoven fabric laminated with a fiber consisting of In addition, it is preferable that each holding member that holds the laminated structure sheet is made of a material having similar chemical resistance.

The structure of each holding member can be appropriately changed depending on the mode of use of the lead-out filter 4. In the embodiments shown in FIGS. 2 and 4, the lead-out filter 4 filters the first filtrate 25 sucked by the pump 5 provided in the polishing liquid supply line 21 from the outside to the inside of the filter medium 41. . For this reason, it is preferable that the holding member has a structure that sufficiently holds the shape of the filter medium 41, protects the filter medium 41 from the pressure generated by the suction of the pump, and the holding member itself can sufficiently withstand the pressure. At this time, since the outer holding member 47 does not receive too much pressure, the outer holding member 47 can be a mesh-shaped member or can be omitted. Changing to a mesh-like holding member or omitting the holding member itself can reduce the obstacles on the surface of the filter medium 41 and increase the effective surface area thereof substantially. In addition, since each of these holding members is mainly made of a chemical-resistant resin such as polypropylene, polyethylene, or nylon, the members can be joined by fusion.

The effective surface area of the filter medium 41 varies depending on the number of folds of the laminated structure sheet, the difference between the inner diameter and the outer diameter of the filter medium 41 formed by folding a hollow cylinder into a chrysanthemum, the size of the entire filter medium 41, and the like. Therefore, it can be appropriately set in consideration of the processing capacity of the CMP apparatus to be used, the processing capacity of the liquid to be filtered 24, and the like.

As described above, the filtering device constituting the present invention filters and separates only the abrasive powder mixed in the liquid to be filtered 24 by the introduction filter 3 and the extraction filter 4, and contains the abrasive. Since the polishing liquid is passed, the polishing liquid can be effectively reused. In particular, in the present invention, the abrasive powder is filtered and separated stepwise by two types of filters, the introduction filter 3 and the extraction filter 4, so that the filter is not blocked by the abrasive powder in a short time as in the related art. It has the preferable effect of:

As the filtration process proceeds, abrasive powder is gradually deposited on the introduction filter 3 and the derivation filter 4, and the filtration amount of each filter decreases.

Therefore, it is preferable that the introduction filter 3 and the extraction filter 4 be replaced or backwashed after a certain time has elapsed. Since the filtration device of the present invention filters the abrasive powder stepwise, each filter can be individually replaced or backwashed according to the filtration state of the introduction filter 3 and the extraction filter 4.

Further, in the lead-out filter 4, backwashing can be performed from the inside to the outside of the filter medium 41. At this time, polishing powder can be deposited on the filtration-side surface of the non-woven fabric constituting the filter medium 31 by smoothing the filtration-side surface, so that the deposited polishing powder is removed by a subsequent backwashing step. To improve the filtration performance.

[0058]

As explained above, the CMP of claim 1
According to the polishing liquid reuse system of the apparatus, since the polishing liquid is supplied to the CMP apparatus by the circulation apparatus provided with the filtration apparatus, the polishing liquid having good properties is stably supplied to the CMP apparatus, and the polishing apparatus is supplied to the CMP apparatus. , The surface quality of the processed surface of a semiconductor wafer or the like can be kept good over a long period of time.

According to the second and third aspects of the present invention, the temperature of the polishing liquid can be controlled within a predetermined range by the temperature control means, so that the CMP processing speed can be controlled.

According to the fourth and fifth aspects of the present invention, the cleaning means in the polishing liquid circulating apparatus can periodically clean the pipes and the like in the polishing liquid circulating apparatus, thereby preventing the polishing powder from being locally deposited. Thus, a clean polishing liquid can be stably supplied to the CMP apparatus.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram of a polishing liquid reuse system of a CMP apparatus.

FIG. 2 is a schematic configuration diagram of a filtration device.

FIG. 3 is a cross-sectional view illustrating a configuration of an introduction filter.

FIG. 4 is a cross-sectional view showing a configuration of a derivation filter.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 CMP apparatus 2 Polishing liquid tank 2a Polishing liquid tank jacket 8 Temperature sensor 16 Bubbling tank for cleaning

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[Procedure amendment]

[Submission date] July 3, 2000 (2007.3)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0007

[Correction method] Change

[Correction contents]

According to the first aspect of the present invention, a particle size of about 0.02 to 0.5 μm supplied to a CMP apparatus (1) is provided.
A circulating device (2, 4, 2) for filtering a substance to be polished other than the abrasive from the polishing liquid containing the abrasive of the cloth and returning it to the CMP apparatus (1)
The above object is achieved by providing a polishing liquid recycling system for a CMP apparatus, which is provided with 1, 5, 22, 3).

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0009

[Correction method] Change

[Correction contents]

[0010] The invention according to claim 2 is a chemical mechanical flat device.
Polishing object other than abrasive from polishing liquid supplied to the carrier
Circulating device that filters the quality and returns it to the chemical mechanical planarization device
Location and chemical mechanical planarization KaSo, characterized in that the temperature of the polishing liquid and a temperature control means for maintaining a predetermined range
The above problem is solved by a polishing liquid reuse system of the present invention.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0011

[Correction method] Change

[Correction contents]

According to a third aspect of the present invention, in the polishing liquid reuse system of the CMP apparatus according to the second aspect , the polishing liquid tank ( Jacket (2a) around 2)
And a device for causing a heat medium to flow through the jacket (2a) to exchange heat with the polishing liquid is provided.

 ──────────────────────────────────────────────────続 き Continuation of the front page (71) Applicant 599087512 Bright Wing System Co., Ltd. 2382-1 Okazu-cho, Izumi-ku, Yokohama-shi, Kanagawa-ken (72) Inventor Keiichi Fujimori 1-7-11 Higashi-Gotanda, Shinagawa-ku, Tokyo A IOS 204 Gotanda Annex 2F, Fujimori Technical Research Institute, Inc. (72) Inventor Akira Hashimoto 1382-2, Okazu-cho, Izumi-ku, Yokohama-shi, Kanagawa Pref. AA01 AB03 CC08

Claims (5)

[Claims] 1. A circulating device for filtering a substance to be polished other than an abrasive from a polishing liquid supplied to a chemical mechanical flattening device and returning it to the chemical mechanical flattening device. Polishing liquid reuse system for chemical mechanical planarization equipment. 2. The polishing liquid reuse system according to claim 1, further comprising temperature control means for maintaining a temperature of the polishing liquid within a predetermined range. 3. As the temperature control means, a jacket is formed around a polishing liquid tank provided in a polishing liquid circulation device provided with the filtration device, and a heating medium is circulated in the jacket to form a polishing liquid. The polishing liquid reuse system for a chemical mechanical planarization apparatus according to claim 1, further comprising an apparatus for performing heat exchange of the polishing liquid. 4. A polishing liquid reuse system for a chemical mechanical planarization apparatus according to claim 1, further comprising cleaning means for cleaning a flow path of said polishing liquid in said circulation device. 5. The chemical mechanical flattening according to claim 1, wherein a bubbling tank for mixing and jetting water and gas is provided in the polishing liquid flow path as the cleaning means. Polishing liquid reuse system for equipment.