JP2001101986A - Flat panel display device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a flat panel display device, using cold cathode, that may achieve a high vacuum state for an easy exhaustion and fast local gas discharge. SOLUTION: An alloy film is formed onto at least a part of the surface excluding electron emission part such as cold cathode array and group electrodes, the alloy film is composed of the one selected from the group consisting essentially of or at least one selected from the group consisting of Ti, Zr and Hf.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a flat panel display device in which a cold cathode array and a phosphor screen are combined.

[0002]

2. Description of the Related Art As a flat panel display device combining a cold cathode and a fluorescent screen, for example, a field emission display (Field-Em) using a field emission cathode array is known.
issionDisplay (FED), Surface-Conduction-Electr using a surface-conduction electron source
on-Emitter-Display (SED), metal-insulator-metal (Metal-Insulator-Metal, MIM) and metal-insulator-
Research and development have been made on a device using a thin-film electron source such as a semiconductor (Metal-Insulator-Semiconductor, hereinafter referred to as MIS) or a device combining a grit electrode with an electron emission film such as a diamond film or a diamond-like carbon film.

[0003] Since these flat panel display devices have a display principle similar to that of a cathode ray tube and are based on light emission of a phosphor by an accelerated electron beam, excellent image quality such as high brightness, high contrast and high speed response can be obtained. There is a feature that is.

[0004]

In a flat panel display device in which a cold cathode and a fluorescent screen are combined, an electron beam emitted from the cold cathode is accelerated and made incident on the fluorescent screen, so that it is necessary to maintain a vacuum between them. . The vacuum requires a high degree of vacuum. When the degree of vacuum is low, a discharge occurs due to a high voltage applied between the cold cathode and the phosphor screen, or the cold cathode is sputtered by the ionized residual gas. In addition, when the cold cathode surface is contaminated with residual gas, the work function of the surface increases, or electrons are scattered in the surface contaminating layer, thereby reducing the amount of emitted electrons and causing irregular current fluctuation. . In particular, FEDs using field emission cathode arrays are sensitive to surface contamination,
At the worst, a high degree of vacuum of the order of 10 ^-7 Torr or less is required.

However, in a flat panel display device combining a cold cathode and a fluorescent screen, the cold cathode array substrate 10
And the distance between the phosphor screen substrate 110 and 200 mm to 3 m as shown in FIG.
m, and the conductance of the exhaust gas is low because the spacer 30 for supporting the atmospheric pressure is disposed inside the panel. When the exhaust pipe 118 is used, the exhaust conductance further decreases. Therefore, it is difficult to obtain a high degree of vacuum in a flat panel display device.

Further, in order to maintain the degree of vacuum after vacuum sealing, an evaporative Ba mounted in a flat panel display device is used.
A getter or the like, or a non-evaporable Zr getter or the like is used. However, in a flat panel display device, these getters 120 have to be usually arranged only in the periphery of the display area as shown in FIG. 3 so as not to hinder image display. Therefore,
When vacuum degradation occurs due to gas release or the like at the center of the display area, it takes a long time to exhaust because of low exhaust conductance. During that time, the surface of the cold cathode is contaminated, or electric discharge occurs to destroy the cold cathode.

An object of the present invention is to achieve a high degree of vacuum in a flat panel display device in which a cold cathode array and a phosphor screen are combined,
An object of the present invention is to realize a highly reliable flat panel display device by quickly exhausting exhaust gas from any place in the display device, maintaining a high degree of vacuum in the entire flat panel display device.

[0008]

The object of the present invention is to provide at least a part of the surface of the cold cathode other than the electron emission portion, or at least a part of the surface of the electrode between the cold cathode and the phosphor screen, with Ti,
This can be achieved by forming a film of at least one selected from the group consisting of Zr and Hf or an alloy containing the same as a main component, and using the films as getters for exhausting gas.

That is, the cold cathode array itself formed substantially over the entire surface of the flat panel display device, or a structure itself such as an electrode sandwiched between the cold cathode array and the phosphor screen has a getter function, so that the flat panel display device is provided. Quick exhaust is possible anywhere in the device. Therefore, the exhaust can be easily performed, and a high vacuum can be achieved in the entire inside of the flat panel display device. Furthermore, quick exhaust with local gas release can be achieved, thereby preventing cold cathode contamination and discharge.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 The present invention relates to an FED using a field emission cathode array, an SED using a surface conduction electron source, a metal-insulator-metal (MIM) or a metal-insulator-semiconductor (MIS). The present invention can be applied to a flat panel display device using a thin-film type electron source such as the above, or a case using any of a diamond film, a carbon nanotube film and other various cold cathodes. Also, the present invention can be applied to a case where an electrode such as grit is sandwiched between the cold cathode array substrate and the phosphor screen substrate. Hereinafter, representative examples will be described for each example.

First, an embodiment applied to an FED will be described with reference to FIGS. Although various shapes, materials, and processes have been developed for the cold cathode array of the FED, an example applied to a Spindt-type cold cathode array using Mo, which is the most typical, is shown here. The basic structure is almost the same even with other field emission cathode arrays such as Si and carbon nanotubes, although the shapes, materials and processes are different, and the embodiment of the present invention can be applied.

First, as shown in FIG. 4A, a cathode electrode 21 serving as a cold cathode base, and a gate insulating layer 2 for insulating the cathode electrode 21 and the gate electrode 23 are formed on an insulating substrate 10 such as glass.
2. The gate electrode 23 is formed by a vapor deposition method, a sputtering method, or the like. Here, for example, a protective film 2 such as TiN
4 or a Zr film whose surface is coated with a protective film 24 such as ZrN, or a H film whose surface is coated with a protective film 24 such as HfN.
Use an f film or the like. Alternatively, an alloy film containing Ti, Zr, and Hf as main components is used instead of the Ti film, the Zr film, and the Hf film. Ti, Z
Another metal layer may be provided under the r, Hf film or an alloy film containing these as a main component. As a method of forming a Ti film coated with TiN, for example, a Ti, TiN
Are formed sequentially or by reactive sputtering or the like in which Ar is used as a discharge gas in the initial stage and N ₂ is switched in the middle. A laminated film of Zr and ZrN and a laminated film of Hf and HfN can be formed in the same manner. Ti, Zr, and Hf are active metals, which cause chemical reactions such as oxidation when exposed to air.However, if the surface is covered with a protective film 24 of a nitride film as in this embodiment, it can be handled in the air. Even the underlying Ti, Zr, Hf
Does not react.

Subsequently, the gate electrode 23 in a portion to be an electron emitting portion is selectively removed by a photo step and an etching step. For the etching, wet etching or dry etching is used. Subsequently, the gate insulating film 22 is selectively removed by wet etching or dry etching (FIG. 4B).

Next, a sacrificial layer 25 of Ni or the like is formed on the protective film 24 of the gate electrode film 23 by an oblique rotation evaporation method (FIG. 4).
(c)). Subsequently, an emitter material such as Mo is formed by a rotary evaporation method, and an emitter cone 26 is formed in the opening of the gate electrode 23.
Is formed (FIG. 4D). Finally, unnecessary Mo film is removed by etching the sacrifice layer 25 to complete the field emission cold cathode array (FIG. 4 (e)).

In this embodiment, the field emission cold cathode array having only the gate electrode film 23 has been described. However, in order to converge the electrons emitted from the field emission cathode array, as shown in FIG. In the case of a field emission cathode array in which a focus electrode 27 is provided via an insulator 28, a Ti film coated with a TiN protective film 24 on the surface of the focus electrode 27 or a Zr film coated with a ZrN protective film 24 is used. I just need.

Next, as shown in FIG. 1, a cold cathode array substrate 10 using the above-mentioned field emission cathode is provided with a fluorescent surface plate 110 separately manufactured, a spacer 30, a frame member 116, and a panel peripheral portion. A getter 120 is provided, and sealing and exhaust are performed using frit glass 115. As the getter 120, a Zr non-evaporable getter or the like is disposed in the panel, or a getter chamber is provided and an evaporable Ba getter is disposed. The frit glass sealing can be performed in the air, but is preferably performed in an inert gas such as nitrogen or Ar or in a vacuum in order to prevent damage to the protective film 24 such as a TiN film. When sealing in gas, exhaust pipe after sealing
The panel is degassed by heating and exhausting using 118, and the exhaust pipe 118 is chipped off and sealed. When sealing is performed in a vacuum, the exhaust pipe 118 is not used, and degassing can be performed in the sealing process.

In the case of the cold cathode array using the field emission cathode of this embodiment, the field emission cathode array is heated in a vacuum when heating and exhausting using the exhaust pipe 118 or at the time of vacuum sealing. By the same mechanism as the non-evaporable getter, the N of TiN, ZrN, and HfN constituting the protective film 24 of the gate electrode 23 or the focus electrode 27 diffuses into the underlying Ti film, Zr film, Hf film, or the like. Gate electrode 2 in panel like 1
On the surface of 3, the protective film 24 is removed, and the active Ti film, Zr film, and Hf film are exposed. This film reacts with the residual gas in the display device and exhibits a getter function. That is, a cold cathode with a built-in getter can be formed. In this embodiment, a Ti film, a Zr
Although a film and an Hf film are used, they may be used for other portions exposed on the surface other than the electron-emitting portion.

As described above, according to the present invention, the getter can be provided not only around the display section of the flat panel display device using the cold cathode but also over the entire display section. Therefore, it is possible to eliminate the conventional problem of low vacuum in the flat panel display device due to low exhaust conductance and slow exhaustion due to local gas release.

Embodiment 2 FIGS. 6 to 8 show an embodiment of the present invention in the case of an SED using a surface conduction electron source as a cold cathode. First, a metal electrode film serving as a power supply pad 31 of a surface conduction electron source is formed on an insulating substrate 10 such as glass. In this embodiment, a TiN protective film 32 is
Ti film coated with, Zr surface coated with ZrN protective film 32
A film or an Hf film whose surface is covered with an HfN protective film 32 is used. Alternatively, instead of Ti, Zr, and Hf, an alloy film containing these as main components is used. Another metal layer may be provided under the Ti or Zr film or the like. As a method of forming a Ti film coated with TiN, for example, a Ti, TiN
Are formed sequentially or by reactive sputtering or the like in which Ar is used as a discharge gas in the initial stage and N ₂ is switched in the middle. The same applies to a stacked film of Zr and ZrN or a stacked film of Hf and HfN. Ti, Zr, and Hf are active metals and cause chemical reactions such as oxidation when exposed to air.However, if the surface is covered with a protective film 32 of a nitride film as in this embodiment, it can be handled in the air. However, the underlying Ti, Zr, and Hf do not react.
Further, TiN, ZrN, and HfN are all conductive nitrides and function as a part of the power supply pad 31.

Subsequently, the metal electrode film is processed into a pair of power supply pads 31 serving as a positive electrode and a negative electrode by a photo process and an etching process (FIG. 6A).

Next, the row electrode 33, the insulating film 34, and the column electrode 35 are sequentially formed by a method such as screen printing, and the row electrode 33 and the column electrode 35 are connected to the power supply pad 31 (FIG. 6).
(b)).

Subsequently, a conductive film 36 such as PdO is formed between the power supply pads 31 by an ink-jet method or the like (FIG. 6C). Is formed to complete a cold cathode array substrate using a surface conduction electron source (FIG. 6 (d)).

Next, as shown in FIG. 7, a face plate 110 of a phosphor screen, on which the above-mentioned substrate 10 is separately formed, a spacer 30 and a frame member 1 are formed.
A getter 120 is arranged around the display unit via 16, sealed with frit glass 115, and evacuated. As the getter 120, a non-evaporable getter is arranged in a panel, or a getter chamber is provided and an evaporable Ba getter is arranged. Although frit glass sealing can be performed in the air, it is desirable to perform sealing in a gas such as nitrogen or Ar or in a vacuum in order to prevent damage to the protective film 32 such as a TiN film. When sealing is performed in a gas, heating and exhaust are performed using the exhaust pipe 118 to degas, and the exhaust pipe 118 is chipped off and sealed. Exhaust pipe when sealed in vacuum
Instead of using 118, it is also possible to combine degassing during the sealing process.

When the substrate 10 on which the surface conduction electron source array of the present embodiment is formed is used, when sealing is performed by heating and exhausting using an exhaust pipe 118, or when conducting vacuum sealing, When the type electron source array is heated, N of TiN, ZrN, and HfN constituting the protective film 32 of the power supply pad 31 diffuses into the Ti film, Zr film, or Hf film by a mechanism similar to the non-evaporable getter. Then, the protective film 32 is removed, and the active Ti film, Zr film, and Hf film are exposed on the surface of the power supply pad 31. Note that heat exposure may be performed in a vacuum to make the exposure, and thus heat treatment may be separately performed after sealing in a vacuum. This active film reacts with the residual gas in the display device and exerts a getter function. That is, a cold cathode with a built-in getter can be formed.

As described above, according to the present invention, the getter can be provided not only around the display section of the flat panel display device using the cold cathode but also over the entire display section. Therefore, it is possible to eliminate the conventional problem of low vacuum in the flat panel display device due to low exhaust conductance and slow exhaustion due to local gas release.

In this embodiment, a Ti film coated on the power supply pad 31 with a TiN protective film 32 or a ZrN protective film 32
Although a Zr film or the like covered with was used, as shown in FIG.
4.A Ti film or a surface coated with a ZrN protective film 32 coated with a TiN protective film 32 on either the row or column wiring formed on
It is also possible to form and process a Zr film or the like coated with.
Alternatively, a TiN protective film 32 is formed on a metal film formed on another surface.
It is also possible to use a Ti film coated with, a Zr film whose surface is coated with a protective film 32 of ZrN, or the like.

Embodiment 3 FIGS. 9 to 11 show an embodiment of the present invention in which a thin-film electron source is used as a cold cathode. Here, an MIM type electron source will be described as an example, but a similar method can be applied to an MIS type.

First, a metal film for the lower electrode 11 is formed.
As a material of the lower electrode 11, Al or an Al alloy is used. Here, an Al—Nd alloy doped with 2 atomic% of Nd was used. For example, a sputtering method is used for film formation. The film thickness is 300
nm. After the film formation,
A stripe-shaped lower electrode 11 as shown in FIG. 9A is formed. For the etching, for example, wet etching with a mixed aqueous solution of phosphoric acid, acetic acid, and nitric acid is used.

Next, a method for forming the protective insulating layer 14 and the insulating layer 12 will be described with reference to FIG. First, a portion serving as an electron emission portion on the lower electrode 11 is masked with a resist film, and the other portion is selectively anodized thickly to form a protective insulating layer 14. If the formation voltage is 100 V, a protective insulating layer 14 having a thickness of about 136 nm is formed. Next, the resist film is removed and the remaining lower electrode 11 is removed.
Anodize the surface of. For example, if the formation voltage is 6V,
On the lower electrode 11, an insulating layer 12 having a thickness of about 10 nm is formed.

Next, as shown in FIG. 9C, an upper bus electrode film serving as a power supply line to the upper electrode 13 is formed by a sputtering method and processed. Here, a multilayer film is used and the lower layer of the upper bus electrode
W as a material of 15; Al-Nd alloy as a material of 16 as an upper bus electrode intermediate layer; Ti as a material of 17 as an upper layer of the upper bus electrode, the surface of which is coated with a protective film 18 of TiN; Protective film 1 coated with Zr or with HfN on the surface
Formed with Hf coated with 8. The upper bus electrode lower layer 15 is formed by forming the upper electrode 13 to be formed later.
Thin to several nm to several tens of nm to avoid disconnection due to the step
The upper bus electrode intermediate layer 16 has several hundred
The film is formed as thick as about m. In the processing, the stacked film of the upper bus electrode is etched in a stripe shape in a direction orthogonal to the lower electrode 11 by a photo process and an etching process. In the etching, a laminated film of Ti or the like of the upper layer 17 of the upper bus electrode, a laminated film of TiN or the like of the protective film 18 thereof, and Al—Nd of the intermediate layer 16 of the upper bus electrode are continuously etched. Further, W of the upper bus electrode lower layer 15 is upper layer,
Etching is performed so as to extend outside the intermediate layer to form a power supply pad to the upper electrode 13.

Finally, as shown in FIG. 9D, the upper electrode 13 is formed by sputtering and processed. As the upper electrode 13, for example, I
A laminated film of r, Pt, and Au is used and the film thickness is several nm. here
3 nm. In addition, the upper electrode 13 is removed except for a portion for supplying power to the electron emitting portion and the upper bus electrode. This allows
T coated on the upper bus electrode surface with a protective film 18 such as TiN
i and the like can be exposed. Further, as the upper electrode 13, TiN, ZrN, or HfN can be used instead of the laminated film of Ir, Pt, and Au. In this case, even if the film of the upper electrode 13 is left on the upper bus electrode other than the electron emission portion, the structure of the upper bus electrode surface is Ti coated with the TiN protective film 18, and the surface is formed of ZrN.
And a HfN film whose surface is coated with HfN.

FIG. 10 shows an example of a MIM type electron source having another structure. This structure consists of a lower electrode 11, a protective insulating layer 14, an insulating layer 1
2.The upper bus electrode is a passivation film except for the electron emission part.
Coated with 9. Therefore, a Ti film or the like covered with the TiN protective film 18 is formed on the passivation film 19. The upper electrode 13 is formed from above. Again,
When a laminated film of Ir, Pt, and Au is used for the upper electrode, the upper electrode 13 is formed only in the electron emission portion. Upper electrode 13 is TiN, Z
In the case of rN and HfN, they may be formed on the entire surface as shown in FIG.

Next, as shown in FIG. 11, a substrate 10 on which the above-mentioned thin-film type electron source array was formed was separately prepared with a fluorescent surface plate.
A getter 120 is arranged around the display unit via the 110, the spacer 30, and the frame member 116, and sealing and exhaust are performed using frit glass 115. As the getter 120, a non-evaporable getter is disposed in a panel, or a getter chamber is provided and an evaporable Ba getter is disposed. Frit glass sealing is possible even in the atmosphere,
In order to prevent damage to the protective film 18 such as a TiN film, nitrogen or A
It is desirable to carry out in a gas such as r or in a vacuum. When sealing is performed in a gas, heating and exhaust are performed using the exhaust pipe 118 to degas, and the exhaust pipe 118 is chipped off and sealed. When sealing is performed in a vacuum, the exhaust pipe 118 is not used, and degassing can be performed in the sealing process.

When the thin film type electron source array substrate of the present embodiment is used, when the heating and exhausting is performed using the exhaust pipe 118, or when the vacuum sealing is performed, the thin film type electron source array is heated in a vacuum. N such as TiN and ZrN diffuses into the Ti film or the Zr film and the like, and the protective film 18 is removed to expose the active Ti film and the Zr film. This film reacts with the residual gas in the display device and exhibits a getter function.

As described above, according to the present invention, the getter can be provided not only around the display section of the flat panel display device using the cold cathode but also over the entire display section. Therefore, it is possible to eliminate the conventional problem of low vacuum in the flat panel display device due to low exhaust conductance and slow exhaustion due to local gas release.

Embodiment 4 In some cold cathodes, a grit electrode of mesh metal or the like is separately used between an electron emission film such as a diamond film or a diamond-like carbon film and a phosphor screen. An example in which an electrode is provided between such a cold cathode and a phosphor screen is shown in FIG.

First, a cold cathode 41 is placed on the substrate 10.
Is formed, and then an electron emission film 42 such as a diamond film is formed.

Next, a face plate of a phosphor screen separately prepared from the substrate 10
Ti coated 110 with TiN protective film, Zr surface coated with ZrN protective film, or Hf coated surface with HfN protective film
Grit electrode made of mesh metal coated with 43.
A getter 120 is disposed around the display unit via the spacers 30 and the frame member 116, and sealing and exhaust are performed using frit glass 115. As the getter 120, a non-evaporable getter is disposed in a panel, or a getter chamber is provided and an evaporable Ba getter is disposed. Frit glass sealing is possible in air, but Ti
In order to prevent damage to the protective film such as the N film, it is preferable to perform the process in a gas such as nitrogen or Ar or in a vacuum. When sealing is performed in a gas, heating and exhaust are performed using the exhaust pipe 118 to degas, and the exhaust pipe 118 is chipped off and sealed. When sealing is performed in a vacuum, the exhaust pipe 118 is not used, and degassing can be performed in the sealing process.

In the case of using this embodiment, the coating was performed by heating the grit electrode 43 in vacuum when performing heating and exhausting using the exhaust pipe 118 or during vacuum sealing.
N of TiN, ZrN, HfN diffuses into Ti film, Zr film, HfN film,
The protective film is removed and the active Ti film and Zr film become grid electrodes 43.
Exposed on the surface. This film reacts with the residual gas in the display device and exhibits a getter function.

As described above, according to the present invention, the getter can be provided not only around the display section of the flat panel display device using the cold cathode but also over the entire display section. Therefore, it is possible to eliminate the conventional problem of low vacuum in the flat panel display device due to low exhaust conductance and slow exhaustion due to local gas release.

[0041]

According to the present invention, a flat panel display device in which a getter is built in a cold cathode array substrate or in a grid electrode or the like can be manufactured. For this reason, the delay in evacuation due to low vacuum and local gas release of the flat panel display device is eliminated. Therefore, a highly reliable flat panel display device free from deterioration such as discharge and cold cathode array surface contamination can be produced.

[Brief description of the drawings]

FIG. 1 is a diagram showing a structure of a flat panel display device using a field emission cold cathode array of the present invention.

FIG. 2 is a diagram illustrating a structure of a conventional flat panel display device.

FIG. 3 is a diagram illustrating a structure of a conventional flat panel display device.

FIG. 4 is a view showing the structure and manufacturing method of the field emission cold cathode array of the present invention.

FIG. 5 is a diagram showing another structure of the field emission cold cathode array of the present invention.

FIG. 6 is a diagram showing the structure and manufacturing method of the surface conduction electron source array of the present invention.

FIG. 7 is a diagram showing a structure of a flat panel display device using the surface conduction electron source array of the present invention.

FIG. 8 is a diagram showing another structure of the surface conduction electron source array of the present invention.

FIG. 9 is a view showing a structure and a manufacturing method of a thin film type electron source of the present invention.

FIG. 10 is a diagram showing another structure of the thin-film electron source of the present invention.

FIG. 11 is a diagram showing a structure of a flat panel display device using the thin-film type electron source array of the present invention.

FIG. 12 is a view showing a structure of a flat panel display device of the present invention in which an electrode is interposed between a cold cathode and a phosphor screen.

[Explanation of symbols]

10 ... substrate, 11 ... lower electrode, 12 ... insulating layer, 13
... upper electrode, 14 ... protective insulating layer, 15 ... upper bus electrode lower layer, 16 ... upper bus electrode intermediate layer, 17 ... upper bus electrode upper layer, 18 ... protective film, 19 ... passivation film, 21 ... cathode electrode, 22 ... gate insulating layer, 23 ... gate electrode, 24 ... protective layer, 25 ... sacrificial layer, 26 ... emitter cone, 27 ... focus electrode, 28 ... insulating film, 30 ... spacer, 31 ... power supply pad, 32 ... protective film, 33 ... row electrode, 34 ...
Insulating film, 35 column electrode, 36 conductive film, 41 cathode electrode, 42 electron emission film, 43 grid electrode, 110 face plate, 115 frit Glass, 116
..Frame members, 118 ... exhaust pipes, 120 ... getters.

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Masakazu Sagawa 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture F-term in Hitachi Research Laboratory, Hitachi Ltd. 5C012 AA05 5C032 AA01 JJ08 5C036 EE01 EE14 EE19 EG11 EG50 EH02

Claims (5)

[Claims] In a flat panel display device comprising a combination of a cold cathode and a fluorescent screen, at least a part of the surface of the cold cathode other than the electron emission portion is selected from the group consisting of Ti or Zr and Hf. A flat panel display device, wherein a film of at least one kind or an alloy containing the same as a main component is formed. 2. The cold cathode is selected from the group consisting of a field emission cathode array, a metal-insulator-metal electron source, a metal-insulator-semiconductor electron source and a surface conduction electron source. A flat panel display device, which is a seed. 3. A flat panel display device comprising a combination of a cold cathode and a fluorescent screen, wherein an electrode is provided between the cold cathode and the fluorescent screen, and Ti, Zr and Hf are formed on at least a part of the surface of the electrode. Wherein a film of at least one selected from the group consisting of or an alloy containing the same as a main component is formed. 4. A film of at least one selected from the group consisting of Ti, Zr and Hf or an alloy containing the same as a main component is formed on at least a part of the surface of the cold cathode other than the electron emission portion. In the method for manufacturing a flat panel display device, after forming the film, a step of coating the film with a nitride film;
During or after the panel sealing step in which the substrate on which the cold cathode is formed and the substrate on which the fluorescent screen is formed are bonded and sealed in vacuum, a step of heating the nitride film and exposing the film surface is provided. Of manufacturing flat panel display device. 5. A film of at least one selected from the group consisting of Ti, Zr and Hf or an alloy containing the same as a main component, on at least a part of the surface of the electrode provided between the cold cathode and the phosphor screen. In the method for manufacturing a flat panel display device, a step of coating a nitride film on the film after the formation of the film, and bonding the substrate on which the cold cathode is formed and the substrate on which the fluorescent screen is formed and sealing the vacuum. A method for manufacturing a flat panel display device, comprising a step of heating the nitride film and exposing the film surface during or after the panel sealing step.