JP2001093934A - Method of manufacturing parts mounted with semiconductor part and finished product mounted with semiconductor part, and finished product mounted with semiconductor part - Google Patents

Method of manufacturing parts mounted with semiconductor part and finished product mounted with semiconductor part, and finished product mounted with semiconductor part

Info

Publication number
JP2001093934A
JP2001093934A JP26539599A JP26539599A JP2001093934A JP 2001093934 A JP2001093934 A JP 2001093934A JP 26539599 A JP26539599 A JP 26539599A JP 26539599 A JP26539599 A JP 26539599A JP 2001093934 A JP2001093934 A JP 2001093934A
Authority
JP
Japan
Prior art keywords
semiconductor component
component
semiconductor
manufacturing
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26539599A
Other languages
Japanese (ja)
Other versions
JP3891743B2 (en
JP2001093934A5 (en
Inventor
Norito Tsukahara
法人 塚原
Naoshi Akiguchi
尚士 秋口
Hideki Miyagawa
秀規 宮川
Shinji Murakami
慎司 村上
Yutaka Harada
豊 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP26539599A priority Critical patent/JP3891743B2/en
Publication of JP2001093934A publication Critical patent/JP2001093934A/en
Publication of JP2001093934A5 publication Critical patent/JP2001093934A5/ja
Application granted granted Critical
Publication of JP3891743B2 publication Critical patent/JP3891743B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-quality, high- productivity and inexpensive assembly mounted with a semiconductor part, a method for manufacturing a finished product mounted with a semiconductor part, and a finished product mounted with a semiconductor part. SOLUTION: A semiconductor element 114 is buried in a first thermoelestic resin substrate 122, and a circuit pattern 116 is formed on the buried semiconductor element 114, thereby completing the mounting. Therefore, no anisotropic conductive sheet is used for mounting, so that the productivity can be improved greatly and the cost be reduced significantly than before. In addition, since the circuit pattern 116 is formed on the buried semiconductor element 114, the semiconductor element 114 can be prevented from sinking in the substrate. As a result, parts mounted with semiconductor part which has no disconnection in the circuit pattern and high quality can be produced stably.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、例えば非接触IC
カードを製造する場合のように導電性ペーストにてなる
回路パターンに設けられた接続パッドにICチップを電
気的に接続する場合にて使用される、ICチップ等の電
子部品を基材に実装して半導体部品実装済部品を製造す
る半導体部品実装済部品の製造方法、該製造方法にて製
造される半導体部品実装済部品を有する半導体部品実装
済完成品の製造方法、及び該半導体部品実装済完成品製
造方法にて製造される半導体部品実装済完成品に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-contact IC
An electronic component such as an IC chip, which is used when an IC chip is electrically connected to connection pads provided on a circuit pattern made of a conductive paste as in the case of manufacturing a card, is mounted on a base material. Of manufacturing a semiconductor component mounted component by manufacturing a semiconductor component mounted component, a method of manufacturing a semiconductor component mounted finished product having the semiconductor component mounted component manufactured by the manufacturing method, and the semiconductor component mounted completion The present invention relates to a completed semiconductor component mounted product manufactured by a product manufacturing method.

【0002】[0002]

【従来の技術】非接触ICカードを例に採り、従来の半
導体部品実装済完成品の製造方法について、図20〜図
27を参照しながら以下に説明する。従来、コイルとI
Cチップとを内蔵し、該コイルを介して外部とのデータ
の授与を行う非接触ICカードを製造する際において、
上記コイルの形成方法としては、銅にてなる巻き線コイ
ルを用いる方法や、銀ペースト等の導体ペーストを印刷
してコイルを形成する方法や、銅箔等の金属箔をエッチ
ングしてコイルを形成する方法等が用いられており、な
かでも上記導体ペーストを印刷して回路パターン及びコ
イルを形成する方法が盛んになっている。
2. Description of the Related Art A non-contact IC card will be described as an example, and a conventional method of manufacturing a completed product with semiconductor components mounted thereon will be described below with reference to FIGS. Conventionally, coils and I
When manufacturing a non-contact IC card that incorporates a C chip and transfers data with the outside through the coil,
Examples of the method of forming the coil include a method using a winding coil made of copper, a method of forming a coil by printing a conductive paste such as a silver paste, and a method of forming a coil by etching a metal foil such as a copper foil. In particular, a method of forming a circuit pattern and a coil by printing the above-mentioned conductive paste is becoming popular.

【0003】図20〜図27は従来の非接触ICカード
及びその製造方法を示す。図20に示すように、従来の
非接触ICカードは、第1基材1aに導電性ペーストに
てコイルパターン2が形成され、このコイルパターン2
の外周端3aに設けた接続パッド6、及びコイルパター
ン2の内周端3bに設けた接続パッド6のそれぞれがI
Cチップ4の電極部と電気的に接続される構成となって
いる。その製造工程は、図21に示すように、まずステ
ップ(図内では「S」にて示す)1では、第1基材1a
の表面に導電性ペーストにてコイルパターン2を含む回
路パターンを印刷する。上記導電性ペーストとしては、
銀ペーストが好適に使用される。上記導電性ペーストの
印刷は、スクリーン印刷やオフセット印刷やグラビア印
刷等によって行われ、例えばスクリーン印刷の場合、1
65メッシュ/インチ、乳剤厚み10μmのマスクを介
して導電性ペーストを第1基材1aに印刷し、導体厚み
約30μmの回路パターンを形成する。上記第1基材1
a及び後述の第2基材2bには、ポリエチレンテレフタ
レート、塩化ビニル、ポリカーボネート、アクリロニト
リルブタジエンスチレン等からなる厚さ0.1〜0.5
mm程度の熱可塑性樹脂が用いられる。
FIGS. 20 to 27 show a conventional non-contact IC card and a method of manufacturing the same. As shown in FIG. 20, in a conventional non-contact IC card, a coil pattern 2 is formed of a conductive paste on a first base material 1a.
The connection pad 6 provided on the outer peripheral end 3a of the coil pattern 2 and the connection pad 6 provided on the inner peripheral end 3b of the coil pattern 2
It is configured to be electrically connected to the electrode part of the C chip 4. In the manufacturing process, as shown in FIG. 21, first, in step (indicated by “S” in the figure) 1, the first base material 1 a
A circuit pattern including the coil pattern 2 is printed on the surface of the substrate with a conductive paste. As the conductive paste,
Silver paste is preferably used. The printing of the conductive paste is performed by screen printing, offset printing, gravure printing, or the like.
A conductive paste is printed on the first base material 1a through a mask of 65 mesh / inch and an emulsion thickness of 10 μm to form a circuit pattern with a conductor thickness of about 30 μm. The first base material 1
a and a second base material 2b described later have a thickness of 0.1 to 0.5 made of polyethylene terephthalate, vinyl chloride, polycarbonate, acrylonitrile butadiene styrene, or the like.
A thermoplastic resin of about mm is used.

【0004】ステップ2では、上記印刷方法により第1
基材1a上に形成した上記導電性ペーストにてなる上記
回路パターンを120℃の温度で10分間加熱して上記
導電性ペーストを硬化させる。ステップ3では、図22
に示すように、上記回路パターンにおける上記外周端3
aや内周端3bに設けられた接続パッド6に異方導電性
シート9を貼り付ける。該異方導電性シートとは、金属
粒子を含有する樹脂シートであり、加熱、加圧されるこ
とで上記金属粒子と上記接続パッド6とを電気的に接続
する。ステップ4では、異方性導電シート9を100℃
で5秒間加熱して接続パッド6に仮圧着する。ステップ
5では、仮圧着した異方導電性シート9に半導体素子4
やコンデンサ等の部品をマウントする。半導体素子4の
実装面には、図23に示すように半導体素子4上の電極
パッド7にバンプ10が形成されており、図24に示す
ようにバンプ10と接続パッド6とが異方導電性シート
9を介して電気的に接続される。尚、バンプ10は、ワ
イヤボンディング法やメッキ法、具体的には半田、金、
銀、銅を用いたメッキ法により、半導体素子4の電極パ
ッド7上に形成される。ステップ6では、200℃の温
度で30秒間加熱して、図25に示すように異方導電性
シート9を硬化して、半導体素子4を本圧着する。
[0004] In step 2, the first printing method is used.
The circuit pattern made of the conductive paste formed on the base material 1a is heated at a temperature of 120 ° C. for 10 minutes to cure the conductive paste. In step 3, FIG.
As shown in FIG.
Then, an anisotropic conductive sheet 9 is attached to the connection pad 6 provided on the inner peripheral end 3b. The anisotropic conductive sheet is a resin sheet containing metal particles, and electrically connects the metal particles and the connection pads 6 by being heated and pressed. In Step 4, the anisotropic conductive sheet 9 is heated to 100 ° C.
For 5 seconds to temporarily press the connection pads 6. In step 5, the semiconductor element 4 is placed on the temporarily compressed anisotropic conductive sheet 9.
And components such as capacitors. On the mounting surface of the semiconductor element 4, bumps 10 are formed on the electrode pads 7 on the semiconductor element 4 as shown in FIG. 23, and the bumps 10 and the connection pads 6 are anisotropically conductive as shown in FIG. They are electrically connected via the sheet 9. The bump 10 is formed by a wire bonding method or a plating method, specifically, solder, gold,
It is formed on the electrode pad 7 of the semiconductor element 4 by a plating method using silver and copper. In step 6, the semiconductor element 4 is heated at a temperature of 200 ° C. for 30 seconds to cure the anisotropic conductive sheet 9 as shown in FIG.

【0005】尚、第1基材1aにガラスエポキシ基板や
セラミック基板を用いた一般的な半導体実装において
は、このステップ6までで半導体素子の実装は完了す
る。そして、ステップ7では、第1基材1aに第2基材
1bを貼り合わせてラミネート処理することにより、図
26に示すように、接続パッド6とバンプ10とが異方
導電性ペースト9を介して電気的に接続されたICカー
ドが得られる。図26にて、5はコイルパターン2に並
列接続されるコンデンサを示す。
In general semiconductor mounting using a glass epoxy substrate or a ceramic substrate for the first base member 1a, the mounting of the semiconductor element is completed up to step 6. Then, in step 7, by laminating the first base material 1 a with the second base material 1 b, as shown in FIG. 26, the connection pads 6 and the bumps 10 are interposed via the anisotropic conductive paste 9. Thus, an IC card electrically connected is obtained. In FIG. 26, reference numeral 5 denotes a capacitor connected in parallel to the coil pattern 2.

【0006】[0006]

【発明が解決しようとする課題】しかし、上述した従来
の半導体部品実装済完成品製造方法、及び該製造方法に
て製造される、半導体部品実装済完成品としての非接触
ICカードの構成では、以下の問題があった。上記第1
基材1aや第2基材1bには、一般的にポリエチレンテ
レフタレートや塩化亜ビニル等の安価な熱可塑性樹脂が
使用されている。一方、従来の製造工程では、上記ステ
ップ6において異方導電性シート9を介して半導体素子
4を本圧着する際の温度が200℃以上と高温である
為、耐熱性に劣る第1基材1aや第2基材1bが劣化し
易いという問題がある。
However, in the above-described conventional method for manufacturing a completed product with semiconductor components mounted thereon and the configuration of a non-contact IC card as a completed product with semiconductor components mounted manufactured by the manufacturing method, There were the following problems. The first
In general, inexpensive thermoplastic resins such as polyethylene terephthalate and vinyl chloride are used for the substrate 1a and the second substrate 1b. On the other hand, in the conventional manufacturing process, the temperature at the time when the semiconductor element 4 is fully press-bonded via the anisotropic conductive sheet 9 in the above step 6 is as high as 200 ° C. or more, so that the first base material 1a having poor heat resistance is used. And that the second base material 1b is easily deteriorated.

【0007】又、異方導電性シート9を用いて半導体素
子4等の部品を第1基材1aに固定する為、異方導電性
シート9の第1基材1aへの仮圧着及び本加圧工程が必
要となる。よって、工程数が多くなり生産性が悪くコス
ト高になるという問題がある。又、異方導電性シート9
の代わりに異方導電性粒子を用いた場合も同様である。
Further, in order to fix the components such as the semiconductor element 4 to the first base member 1a by using the anisotropic conductive sheet 9, the anisotropic conductive sheet 9 is temporarily press-bonded to the first base member 1a. A pressure step is required. Therefore, there is a problem that the number of processes is increased, productivity is reduced, and costs are increased. Also, the anisotropic conductive sheet 9
The same applies to the case where anisotropic conductive particles are used instead of.

【0008】又、上記ステップ7においてラミネート処
理する際に、半導体素子4が加圧、加熱される為、図2
7に示すように、半導体素子4が第1基材1aに沈み込
み、導電性ペーストによる回路パターン6が湾曲した形
に変形してしまう。その結果、回路パターンの断線の可
能性が高く、動作不良の不具合が発生する。本発明はこ
のような問題点を解決するためになされたもので、高品
質、高生産性で安価な、半導体部品実装済部品の製造方
法、半導体部品実装済完成品の製造方法、及び半導体部
品実装済完成品を提供することを目的とする。
Further, since the semiconductor element 4 is pressurized and heated at the time of the laminating process in the step 7, the semiconductor device 4 shown in FIG.
As shown in FIG. 7, the semiconductor element 4 sinks into the first base material 1a, and the circuit pattern 6 made of the conductive paste is deformed into a curved shape. As a result, the possibility of disconnection of the circuit pattern is high, and a malfunction such as malfunction occurs. The present invention has been made in order to solve such problems, and is a method for manufacturing a high-quality, high-productivity, and inexpensive semiconductor component-mounted component, a method for manufacturing a semiconductor-component-completed product, and a semiconductor component. The purpose is to provide mounted finished products.

【0009】[0009]

【課題を解決するための手段】本発明の第1態様である
半導体部品実装済部品の製造方法は、基材に半導体部品
を挿入するとともに、上記基材のパターン形成面に上記
半導体部品の回路接続部を露出させ、上記回路接続部に
接触して上記半導体部品と電気的に接続され導電性ペー
ストにて形成される回路パターンを上記パターン形成面
上に形成することで当該回路パターンへの上記半導体部
品の実装を行う、ことを特徴とする。
According to a first aspect of the present invention, there is provided a method of manufacturing a component on which a semiconductor component is mounted, wherein the semiconductor component is inserted into a base material and a circuit of the semiconductor component is provided on a pattern forming surface of the base material. The connection portion is exposed, and a circuit pattern formed of a conductive paste, which is electrically connected to the semiconductor component by contacting the circuit connection portion, is formed on the pattern forming surface, thereby forming the circuit pattern on the circuit pattern. Mounting a semiconductor component.

【0010】又、上記基材は熱可塑性樹脂材にてなり、
上記半導体部品の上記基材への挿入は、上記半導体部品
及び上記基材を加熱しかつ上記半導体部品及び上記基材
を相対的に押圧することでなされ、上記回路接続部の電
気的接続面を上記基材の上記パターン形成面に露出させ
るようにしてもよい。
The base material is made of a thermoplastic resin material,
Insertion of the semiconductor component into the base material is performed by heating the semiconductor component and the base material and pressing the semiconductor component and the base material relative to each other. The substrate may be exposed on the pattern forming surface.

【0011】又、上記回路接続部は上記半導体部品の電
極、該電極上に形成したバンプ、及び該バンプの部材形
成面に形成した回路接続用部材であり、上記基材に上記
半導体部品が挿入されたとき上記回路接続用部材は上記
パターン形成面より突出した状態であり、上記回路パタ
ーンは上記回路接続用部材に接触するようにしてもよ
い。
[0011] The circuit connection portion includes an electrode of the semiconductor component, a bump formed on the electrode, and a circuit connection member formed on a member forming surface of the bump. The semiconductor component is inserted into the base material. When this is done, the circuit connection member may be in a state of protruding from the pattern formation surface, and the circuit pattern may be in contact with the circuit connection member.

【0012】本発明の第2態様である半導体部品実装済
完成品の製造方法は、上記第1態様の半導体部品実装済
部品製造方法を用いて半導体部品実装済部品を作製し、
作製された上記半導体部品実装済部品を樹脂材にて封止
して半導体部品実装済完成品を製造することを特徴とす
る。
According to a second aspect of the present invention, there is provided a method of manufacturing a completed semiconductor component-mounted component, the method comprising manufacturing the semiconductor component-mounted component using the semiconductor component-mounted component manufacturing method of the first aspect.
The manufactured semiconductor component-mounted component is sealed with a resin material to manufacture a semiconductor component-mounted finished product.

【0013】本発明の第3態様である半導体部品実装済
完成品は、上記第2態様の半導体部品実装済完成品の製
造方法を用いて製造されることを特徴とする。
According to a third aspect of the present invention, a completed semiconductor component mounted product is manufactured using the above-described method for manufacturing a completed semiconductor component mounted product according to the second aspect.

【0014】[0014]

【発明の実施の形態】本発明の実施形態である、半導体
部品実装済部品の製造方法、半導体部品実装済完成品の
製造方法、及び半導体部品実装済完成品について、図を
参照しながら以下に説明する。ここで、上記半導体部品
実装済完成品の製造方法は、上記半導体部品実装済部品
の製造方法にて製造された半導体部品実装済部品を有す
る半導体部品実装済完成品を製造する方法であり、及び
上記半導体部品実装済完成品は上記半導体部品実装済完
成品の製造方法にて製造されたものである。尚、各図に
おいて同じ構成部分については同じ符号を付している。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a semiconductor component-mounted component, a method for manufacturing a semiconductor component-mounted completed product, and a semiconductor component-mounted completed product according to embodiments of the present invention will be described below with reference to the drawings. explain. Here, the method of manufacturing the completed semiconductor component mounted product is a method of manufacturing a semiconductor component mounted completed product having the semiconductor component mounted component manufactured by the method of manufacturing the semiconductor component mounted component, and The completed semiconductor component mounted product is manufactured by the method of manufacturing a semiconductor component mounted finished product. In the drawings, the same components are denoted by the same reference numerals.

【0015】上記「課題を解決するための手段」に記載
する、「基材」の機能を果たす一例として本実施形態で
は第1熱可塑性樹脂基材122を例に採り、又、「回路
接続部」の機能を果たす一例として本実施形態では電極
117、バンプ113、及び回路接続用部材118の一
組を例に採る。しかしながら、上記「回路接続部」は、
これに限定されるものではなく、電極117のみの場
合、電極117及びバンプ113の場合をも含む概念で
ある。又、「半導体部品実装済完成品」の機能を果たす
一例として本実施形態では非接触ICカードを例に採る
が、勿論これに限定されるものではない。又、「電極
部」の機能を果たす一例として本実施形態では、電極1
17のみ、電極117及びバンプ113を例に採る。
In the present embodiment, the first thermoplastic resin substrate 122 is taken as an example of fulfilling the function of the "substrate" described in the "Means for Solving the Problems". In the present embodiment, one set of the electrode 117, the bump 113, and the circuit connecting member 118 is taken as an example that fulfills the function of "." However, the "circuit connection part"
The concept is not limited to this, and includes the case of only the electrode 117 and the case of the electrode 117 and the bump 113. Further, in the present embodiment, a non-contact IC card is taken as an example which fulfills the function of “finished product with semiconductor components mounted thereon”, but is not limited to this. Also, in the present embodiment, the electrode 1
17, only the electrode 117 and the bump 113 are taken as an example.

【0016】図1には、本実施形態の半導体部品実装済
部品の製造方法を用いて作製された半導体部品実装済部
品を備えた、半導体部品実装済完成品の一例としての非
接触ICカード101を示している。該非接触ICカー
ド101において、半導体素子114は予め第1熱可塑
性樹脂基材122に埋め込まれ、該第1熱可塑性樹脂基
材122のパターン形成面123に露出したバンプ11
3の部材形成面115に回路接続用部材118を形成す
る。そして、導電性ペーストにより形成した回路パター
ン116と回路接続用部材118とは異方導電性シート
等を介さずに直接に導通を得る点で従来例と異なる。1
24、125は、半導体素子114及び回路パターン1
16を有する半導体部品実装済部品121を保護する為
にラミネート処理を行う第2熱可塑性樹脂シート基材及
び第3熱可塑性樹脂シート基材である。以下に、非接触
ICカード101の製造手順について、図2〜図8、及
び図15を参照して説明する。
FIG. 1 shows a non-contact IC card 101 as an example of a completed semiconductor component mounted product provided with a semiconductor component mounted component manufactured using the method of manufacturing a semiconductor component mounted component of the present embodiment. Is shown. In the non-contact IC card 101, the semiconductor element 114 is embedded in the first thermoplastic resin base material 122 in advance, and the bumps 11 exposed on the pattern forming surface 123 of the first thermoplastic resin base material 122 are formed.
The circuit connecting member 118 is formed on the third member forming surface 115. The circuit pattern 116 formed of the conductive paste and the circuit connecting member 118 are different from the conventional example in that electrical continuity is obtained directly without using an anisotropic conductive sheet or the like. 1
24 and 125 are the semiconductor element 114 and the circuit pattern 1
A second thermoplastic resin sheet base material and a third thermoplastic resin sheet base material that are subjected to a laminating process to protect the semiconductor component-mounted component 121 having No. 16. Hereinafter, a manufacturing procedure of the non-contact IC card 101 will be described with reference to FIGS. 2 to 8 and FIG.

【0017】図2において、117は半導体部品に相当
する半導体素子114の電極、112は半導体素子11
4のアクティブ面を保護するパッシベーション膜を示
す。図2及び図15に示すステップ(図15では「S」
にて示す)101において半導体素子114の電極11
7上に、AuやCu、半田等にてなる金属ワイヤを用い
たワイヤボンディング法により、バンプ113を形成す
る。次に、図3及び図15に示すステップ102におい
て、バンプ113を形成した半導体素子114をポリエ
チレンテレフタレート、塩化ビニル、ポリカーボネー
ト、アクリロニトリルブタジエンスチレン等の電気的絶
縁性を有する熱可塑性樹脂で形成されたシート状の第1
熱可塑性樹脂基材122上に一個もしくは複数個マウン
トする。ここで、第1熱可塑性樹脂基材122の厚み
は、本実施形態の場合、後述するように少なくともバン
プ113の部材形成面115を第1熱可塑性樹脂基材1
22から露出させる必要性から、基本的に半導体素子1
14の厚みとバンプ113の高さとを合わせた厚み以下
であり、半導体素子114の厚み以上にすることが望ま
しい。例えば、半導体素子114の厚みが0.18m
m、バンプ113の高さが0.04mmの場合、第1熱
可塑性樹脂基材122の厚みは、0.2mmが好まし
い。
In FIG. 2, reference numeral 117 denotes an electrode of a semiconductor element 114 corresponding to a semiconductor component;
4 shows a passivation film for protecting the active surface of No. 4. The steps shown in FIGS. 2 and 15 (“S” in FIG. 15)
The electrode 11 of the semiconductor element 114 at 101
The bumps 113 are formed on the substrate 7 by a wire bonding method using a metal wire made of Au, Cu, solder, or the like. Next, in step 102 shown in FIGS. 3 and 15, the semiconductor element 114 on which the bumps 113 are formed is made of a sheet formed of an electrically insulating thermoplastic resin such as polyethylene terephthalate, vinyl chloride, polycarbonate, acrylonitrile butadiene styrene, or the like. First
One or more are mounted on the thermoplastic resin substrate 122. Here, in the case of the present embodiment, the thickness of the first thermoplastic resin base material 122 is such that at least the member forming surface 115 of the bump 113 is in contact with the first thermoplastic resin base material 1.
Basically, the semiconductor device 1
It is desirable that the thickness be equal to or less than the total thickness of the thickness of the semiconductor element 114 and the thickness of the bump 113. For example, the thickness of the semiconductor element 114 is 0.18 m
When the height of the bump 113 is 0.04 mm, the thickness of the first thermoplastic resin base material 122 is preferably 0.2 mm.

【0018】次に図4及び図15に示すステップ103
において、バンプ113付の半導体素子114がマウン
トされた第1熱可塑性樹脂基材122を熱プレス板17
1、172の間に狭み、バンプ113付の半導体素子1
14と第1熱可塑性樹脂基材122とを加熱しながら相
対的に押圧し、半導体素子114を第1熱可塑性樹脂基
材122内に挿入する。該熱プレスの条件は、例えばポ
リエチレンテレフタレート製の第1熱可塑性樹脂基材1
22を用いた場合、圧力30Kg/cm2、温度120
℃、プレス時間1分である。尚、上記温度、圧力は、第
1熱可塑性樹脂基材122の材質により異ならせる。
Next, step 103 shown in FIG. 4 and FIG.
The first thermoplastic resin substrate 122 on which the semiconductor element 114 with the bump 113 is mounted
1 and 172, semiconductor element 1 with bump 113
The semiconductor element 114 is inserted into the first thermoplastic resin base 122 by pressing them relatively to each other while heating the base 14 and the first thermoplastic resin base 122. The conditions of the hot pressing are, for example, the first thermoplastic resin substrate 1 made of polyethylene terephthalate.
When using No. 22, the pressure is 30 kg / cm 2 , and the temperature is 120 kg / cm 2 .
° C, press time 1 minute. The temperature and pressure vary depending on the material of the first thermoplastic resin base material 122.

【0019】ステップ104に対応する図5は、上記プ
レス後における半導体素子114及び第1熱可塑性樹脂
基材122の状態を示した断面図である。第1熱可塑性
樹脂基材122への半導体素子114の上記挿入動作に
より、本実施形態では図5に示すように、バンプ113
の端面、つまり上記プレスによりバンプ113が熱プレ
ス板171に接触した面である部材形成面115を第1
熱可塑性樹脂基材122のパターン形成面123に露出
させた状態で、半導体素子114及びバンプ113は第
1熱可塑性樹脂基材122に埋設される。このとき、本
実施形態では、薄型化を図るため、半導体素子114の
上記アクティブ面に対向する裏面114aと、上記パタ
ーン形成面123に対向する第1熱可塑性樹脂基材12
2の裏面122aとは、図示するように同一面となるよ
うにしているが、これに限定されるものではない。つま
り、製造する半導体部品実装済部品によっては、上述し
た第1熱可塑性樹脂基材122の厚みや、熱プレス板1
71,172の押圧力等の調整により、例えば、第1熱
可塑性樹脂基材122の裏面122aより半導体素子1
14の裏面114aを突出させてもよい。
FIG. 5 corresponding to step 104 is a sectional view showing a state of the semiconductor element 114 and the first thermoplastic resin base 122 after the above-described pressing. According to the above-described operation of inserting the semiconductor element 114 into the first thermoplastic resin base material 122, in this embodiment, as shown in FIG.
The member forming surface 115, that is, the surface where the bump 113 contacts the hot press plate 171 by the above pressing,
The semiconductor elements 114 and the bumps 113 are embedded in the first thermoplastic resin base 122 while being exposed on the pattern formation surface 123 of the thermoplastic resin base 122. At this time, in the present embodiment, in order to reduce the thickness, the back surface 114 a facing the active surface of the semiconductor element 114 and the first thermoplastic resin base material 12 facing the pattern forming surface 123 are formed.
The second back surface 122a is made to be the same surface as shown in the figure, but is not limited to this. That is, the thickness of the first thermoplastic resin base 122 and the thickness of the hot press
By adjusting the pressing force and the like of 71 and 172, for example, the semiconductor element 1 is moved from the back surface 122a of the first thermoplastic resin base material 122.
The back surface 114a of the 14 may be projected.

【0020】尚、上記部材形成面115が電気的接続面
の機能を果たす一例である。又、本実施形態では、部材
形成面115のみが第1熱可塑性樹脂基材122のパタ
ーン形成面123に露出しているが、例えば熱プレス板
171の形状を工夫する等により、部材形成面115だ
けでなくバンプ113の一部又は全部をパターン形成面
123より露出させてもよい。このように構成したとき
には、上記電気的接続面は、パターン形成面123より
露出した部分の外表面に相当する。尚、図16には、バ
ンプ113の部材形成面115及びその近傍部分をパタ
ーン形成面123より露出された場合を図示している。
It is to be noted that the member forming surface 115 is an example that functions as an electrical connection surface. In the present embodiment, only the member forming surface 115 is exposed on the pattern forming surface 123 of the first thermoplastic resin base material 122. However, for example, the shape of the hot press plate 171 is devised or the like, so that the member forming surface 115 is formed. In addition, part or all of the bumps 113 may be exposed from the pattern forming surface 123. With such a configuration, the electrical connection surface corresponds to the outer surface of a portion exposed from the pattern forming surface 123. Note that FIG. 16 shows a case where the member forming surface 115 of the bump 113 and the vicinity thereof are exposed from the pattern forming surface 123.

【0021】次に、図6及び図15におけるステップ1
05において、第1熱可塑性樹脂基材122のパターン
形成面123に露出したバンプ113の部材形成面11
5上にAuやCu、半田等にてなる金属ワイヤを用いた
ワイヤボンディング法により、回路接続用部材118を
形成する。次に、図7及び図15におけるステップ10
6において、Ag、Cu等の導電性ペーストを用いて、
回路接続用部材118に接触するように、好ましくは図
示するように回路接続用部材118を埋設するようにし
て半導体素子114と電気的に接続される回路パターン
116を、第1熱可塑性樹脂基材122のパターン形成
面123上に形成する。該導電性ペーストによる回路パ
ターン116の形成は、一般的に、スクリーン印刷やオ
フセット印刷やグラビア印刷等によって行われる。例え
ばスクリーン印刷の場合、165メッシュ/インチ、乳
剤厚み10μmのマスクを介し、導電性ペーストを印刷
し、導体厚みが約30μmにてなる回路パターン116
を形成する。尚、形成される回路パターン116は、本
実施形態では、半導体素子114と無線にて情報の送受
信を行うためのアンテナコイルの形状である。勿論、上
記回路パターン116は、上記アンテナコイル形状に限
定されるものではなく、製造物としての半導体部品実装
済部品の機能に応じた形態に形成される。このようにし
て回路パターン116への半導体素子114の実装を行
う。又、該実装された図7に示す状態の構成部分を、半
導体部品実装済部品121とする。
Next, step 1 in FIG. 6 and FIG.
At 05, the member forming surface 11 of the bump 113 exposed on the pattern forming surface 123 of the first thermoplastic resin base material 122
The circuit connecting member 118 is formed on the substrate 5 by a wire bonding method using a metal wire made of Au, Cu, solder, or the like. Next, step 10 in FIGS.
In 6, using a conductive paste such as Ag and Cu,
The circuit pattern 116 electrically connected to the semiconductor element 114 so as to be in contact with the circuit connection member 118, preferably as shown in FIG. 122 is formed on the pattern forming surface 123. The formation of the circuit pattern 116 using the conductive paste is generally performed by screen printing, offset printing, gravure printing, or the like. For example, in the case of screen printing, a conductive paste is printed through a mask of 165 mesh / inch and an emulsion thickness of 10 μm, and a circuit pattern 116 having a conductor thickness of about 30 μm is used.
To form In this embodiment, the formed circuit pattern 116 has the shape of an antenna coil for transmitting and receiving information to and from the semiconductor element 114 wirelessly. Of course, the circuit pattern 116 is not limited to the antenna coil shape, but is formed in a form corresponding to the function of the semiconductor component-mounted component as a product. Thus, the semiconductor element 114 is mounted on the circuit pattern 116. The mounted component in the state shown in FIG. 7 is referred to as a semiconductor component mounted component 121.

【0022】次に、図8及び図15におけるステップ1
07において、上記半導体部品実装済部品121をその
厚み方向から、ポリエチレンテレフタレート、塩化ビニ
ル、ポリカーボネート、アクリロニトリルブタジエンス
チレン等の電気的絶縁性を有するシート状の第2熱可塑
性樹脂基材124及び第3熱可塑性樹脂基材125にて
サンドイッチしてラミネート処理し、半導体部品実装済
部品121の封止を行う。該ラミネート処理の条件は、
ポリエチレンテレフタレート製の第2熱可塑性樹脂基材
124及び第3熱可塑性樹脂基材125を熱プレス板に
てプレスする場合、圧力30Kg/cm2、温度120
℃、昇圧時間1分、圧力保持時間1分である。以上の工
程を経て、図1に示すような、半導体素子114が実装
されたモジュールとしての半導体部品実装済部品や、本
実施形態の場合のように上記半導体部品実装済部品を有
する半導体部品実装済完成品としての機能を果たす一例
に相当する非接触ICカード101が完成する。
Next, step 1 in FIG. 8 and FIG.
In 07, the above-mentioned semiconductor component-mounted component 121 is placed in the thickness direction from the sheet-like second thermoplastic resin base material 124 having electrical insulation such as polyethylene terephthalate, vinyl chloride, polycarbonate, acrylonitrile butadiene styrene, and the third heat component. The components 121 are sandwiched and laminated with the plastic resin substrate 125 to seal the semiconductor component-mounted component 121. The conditions of the lamination process are as follows:
When the second thermoplastic resin substrate 124 and the third thermoplastic resin substrate 125 made of polyethylene terephthalate are pressed with a hot press plate, the pressure is 30 kg / cm 2 and the temperature is 120.
° C, pressure rise time 1 minute, pressure hold time 1 minute. Through the above steps, as shown in FIG. 1, a semiconductor component mounted component as a module on which the semiconductor element 114 is mounted, or a semiconductor component mounted component having the semiconductor component mounted component as in the present embodiment. A non-contact IC card 101 corresponding to an example that functions as a completed product is completed.

【0023】このように本実施形態によれば、第1熱可
塑性樹脂基材122に半導体素子114を予め埋め込ん
だ後に、カード化を実施する為、従来例における図27
に示すようなカード化後における半導体素子4の基材1
aへの沈み込みは発生しない。よって、回路パターン1
16が断線することは無く、高品質の半導体部品実装済
部品及び半導体部品実装済完成品を製造することが可能
になる。さらに、異方導電性シート又は異方導電性粒子
等の接合材料を用いる必要が無い為、異方導電性シート
等の処理に要する工程はなく、高生産性且つ安価な半導
体部品実装済部品及び半導体部品実装済完成品を提供す
ることが可能になる。
As described above, according to the present embodiment, a card is formed after the semiconductor element 114 is embedded in the first thermoplastic resin base material 122 in advance.
Base material 1 of semiconductor element 4 after carding as shown in FIG.
No sinking into a occurs. Therefore, the circuit pattern 1
The wire 16 is not disconnected, and it is possible to manufacture a high-quality semiconductor component mounted component and a completed semiconductor component mounted product. Further, since there is no need to use a bonding material such as an anisotropic conductive sheet or anisotropic conductive particles, there is no step required for processing the anisotropic conductive sheet or the like, and a high-productivity and inexpensive semiconductor component-mounted component and It is possible to provide a finished product on which semiconductor components are mounted.

【0024】又、上述した実施形態では、回路接続用部
材118と回路パターン116とが接触するように構成
したが、若干、バンプ113との電気的接続性に劣る可
能性が考えられるが、図16に示す半導体部品実装済部
品126及び図17に示す非接触ICカード106のよ
うに、回路接続用部材118を設けず、バンプ113の
部材形成面115及びその近傍部分にて、又は部材形成
面115のみにて、回路パターン116との電気的接続
を図るように構成することもできる。尚、図16は、部
材形成面115及びその近傍部分にて回路パターン11
6と電気的接続を図るように構成した場合を図示し、図
17は部材形成面115のみにて回路パターン116と
電気的接続を図るように構成した場合を図示している。
又、上述したように、半導体素子114を第1熱可塑性
樹脂基材122に挿入するときに使用する熱プレス板1
71を工夫することで、図18に示す半導体部品実装済
部品127及び図19に示す非接触ICカード107の
ように、回路接続用部材118及びバンプ113を設け
ず、半導体素子114の電極117と回路パターン11
6とを直接に接触させるように構成することもできる。
この場合、電極117の表面117aが上記電気的接続
面に相当する。
In the above-described embodiment, the circuit connecting member 118 and the circuit pattern 116 are configured to be in contact with each other. However, it is conceivable that the electrical connection with the bump 113 may be slightly inferior. Unlike the semiconductor component mounted component 126 shown in FIG. 16 and the non-contact IC card 106 shown in FIG. 17, the circuit connecting member 118 is not provided, and the bump 113 is formed on the member forming surface 115 and the vicinity thereof, or on the member forming surface. It is also possible to configure so as to achieve electrical connection with the circuit pattern 116 only by using 115. FIG. 16 shows the circuit pattern 11 on the member forming surface 115 and its vicinity.
FIG. 17 shows a case in which electrical connection with the circuit pattern 116 is made only by the member forming surface 115. FIG.
Further, as described above, the hot press plate 1 used when inserting the semiconductor element 114 into the first thermoplastic resin base material 122 is used.
By devising the component 71, unlike the semiconductor component mounted component 127 shown in FIG. 18 and the non-contact IC card 107 shown in FIG. Circuit pattern 11
6 may be directly contacted.
In this case, the surface 117a of the electrode 117 corresponds to the electrical connection surface.

【0025】よって、半導体素子114の電極117と
回路パターン116とを直接に接触させるように構成し
たときには、上述したステップ101〜107の処理の
内、ステップ101、102、及び105は削除され
る。又、上述の実施形態では、半導体素子114の供給
を受けた時点からの製造工程を説明したが、既にステッ
プ101〜104の工程が終了した物が供給可能なとき
には、上記ステップ105から開始可能であり、又、半
導体素子114の電極117の表面117aが第1熱可
塑性樹脂基材122のパターン形成面123に露出した
ような物が供給可能なときには、上記ステップ106か
ら開始可能である。
Therefore, when the electrode 117 of the semiconductor element 114 is configured to be in direct contact with the circuit pattern 116, steps 101, 102, and 105 of the above-described steps 101 to 107 are deleted. Further, in the above-described embodiment, the manufacturing process from the point of receiving the supply of the semiconductor element 114 has been described. However, when a product that has already been subjected to the steps 101 to 104 can be supplied, the process can be started from the step 105. If it is possible to supply a material in which the surface 117 a of the electrode 117 of the semiconductor element 114 is exposed on the pattern forming surface 123 of the first thermoplastic resin base material 122, the process can be started from the above-described step 106.

【0026】又、図9に示すようにステップ107にて
パターン形成面123上に回路パターン116を形成し
た後、当該回路パターン116の所定の位置にコンデン
サ、抵抗等の受動部品である電子部品129をマウント
した、半導体部品実装済部品128を形成することもで
きる。そして、図10に示すように、該半導体部品実装
済部品128をその厚み方向から第2熱可塑性樹脂基材
124及び第3熱可塑性樹脂基材125にてサンドイッ
チしてラミネート処理して、図10に示す非接触ICカ
ード102を製造することもできる。
After the circuit pattern 116 is formed on the pattern forming surface 123 in step 107 as shown in FIG. 9, electronic components 129 such as capacitors and resistors are placed at predetermined positions on the circuit pattern 116. Can be formed to form a semiconductor component-mounted component 128. Then, as shown in FIG. 10, the semiconductor component-mounted component 128 is sandwiched and laminated with a second thermoplastic resin base 124 and a third thermoplastic resin base 125 from the thickness direction thereof. The non-contact IC card 102 shown in FIG.

【0027】又、上述した図1〜図10では、半導体素
子114と回路パターン116との接続箇所のみを示し
ているが、図7に示す半導体部品実装済部品121の全
体を示す平面図を図11に、図11に示すI−I部分の
断面図を図12に示し、さらに半導体部品実装済部品1
21の全体を第2熱可塑性樹脂基材124及び第3熱可
塑性樹脂基材125にてラミネート処理してなる非接触
ICカード101における上記I−I部分の断面図を図
13に示す。又、図14に示すように、回路パターン1
16の外周端130と半導体素子114の電極117の
対応部分131とをジャンパー接続する為に、回路パタ
ーン116に絶縁膜132を設けた後、外周端130と
上記電極対応部分131とを導電性ペーストの印刷や導
電性箔133等にて電気的に接続する。これにより図示
するようなジャンパーが完成する。尚、絶縁膜132の
形成は、ポリエステル系の絶縁箔の接着や絶縁塗料の印
刷により行う。
Although FIGS. 1 to 10 only show the connection between the semiconductor element 114 and the circuit pattern 116, FIG. 7 is a plan view showing the entire semiconductor component mounted component 121 shown in FIG. 11 shows a cross-sectional view of the II section shown in FIG. 11, and FIG.
FIG. 13 is a cross-sectional view of the non-contact IC card 101 obtained by laminating the entire structure 21 with a second thermoplastic resin base 124 and a third thermoplastic resin base 125. Also, as shown in FIG.
In order to make a jumper connection between the outer peripheral end 130 of the semiconductor element 114 and the corresponding part 131 of the electrode 117 of the semiconductor element 114, an insulating film 132 is provided on the circuit pattern 116, and then the outer peripheral end 130 and the electrode corresponding part 131 are electrically conductive paste. And electrically connected by a conductive foil 133 or the like. This completes the jumper as shown. The insulating film 132 is formed by bonding a polyester-based insulating foil or printing an insulating paint.

【0028】尚、以上の説明において、半導体部品実装
済完成品の機能を果たす一例としての非接触ICカード
を製造する際に、半導体部品実装済部品121や半導体
部品実装済部品128を、2つの熱可塑性樹脂基材12
2,125にてサンドイッチする構成を採っているが、
該構成に限定されるものではない。例えば、第1熱可塑
性樹脂基材122をプレート上に載置して、これを封止
するようなときには第3熱可塑性樹脂基材125のみを
使用すればよく、製造する半導体部品実装済部品の種類
や、機能等に応じて、2つの熱可塑性樹脂基材122,
125の使用を適宜工夫すればよい。
In the above description, when manufacturing a non-contact IC card as an example that fulfills the function of a completed semiconductor component mounted product, the semiconductor component mounted component 121 and the semiconductor component mounted component 128 are replaced by two semiconductor component mounted components. Thermoplastic resin substrate 12
It adopts the configuration of sandwiching at 2,125,
The configuration is not limited to this. For example, when the first thermoplastic resin base material 122 is placed on a plate and sealed, only the third thermoplastic resin base material 125 may be used. Depending on the type, function, etc., two thermoplastic resin base materials 122,
The use of 125 may be appropriately devised.

【0029】又、上述の実施形態では、タクト向上のた
め、上述のように第1熱可塑性樹脂基材122の厚み調
整、及び熱プレス動作の制御を行うことで、上記ステッ
プ103にて、第1熱可塑性樹脂基材122へのバンプ
113付き半導体素子114の挿入動作と、バンプ11
3の部材形成面115のパターン形成面123への露出
動作とを同じ工程にて処理しているが、これに限定され
るものではない。即ち、上記電気的接続面、例えば部材
形成面115をパターン形成面123に露出させず、上
記回路接続用部材118の形成時における熱にて第1熱
可塑性樹脂基材122を溶融して回路接続用部材118
を部材形成面115上に形成しかつ回路接続用部材11
8と部材形成面115との電気的接続を図るように構成
してもよい。
In the above-described embodiment, in order to improve the tact time, the thickness of the first thermoplastic resin base material 122 is adjusted and the hot press operation is controlled as described above. (1) Inserting operation of semiconductor element 114 with bump 113 into thermoplastic resin base material 122 and bump 11
The operation of exposing the member forming surface 115 to the pattern forming surface 123 is performed in the same step, but is not limited to this. That is, the electrical connection surface, for example, the member formation surface 115 is not exposed to the pattern formation surface 123, and the first thermoplastic resin base 122 is melted by heat generated when the circuit connection member 118 is formed, thereby forming a circuit connection. Member 118
Is formed on the member forming surface 115 and the circuit connecting member 11 is formed.
8 and the member forming surface 115 may be electrically connected.

【0030】又、上述した実施形態では、回路パターン
116は第1熱可塑性樹脂基材122のパターン形成面
123上に形成したが、上記半導体部品実装済完成品の
製造工程においては、以下のように構成することもでき
る。つまり、上記パターン形成面123に対面する上記
第3熱可塑性樹脂基材125に回路パターン116を形
成することもできる。
In the above-described embodiment, the circuit pattern 116 is formed on the pattern forming surface 123 of the first thermoplastic resin substrate 122. Can also be configured. That is, the circuit pattern 116 can be formed on the third thermoplastic resin base 125 facing the pattern forming surface 123.

【0031】[0031]

【発明の効果】以上詳述したように本発明の第1態様に
おける、半導体部品実装済部品の製造方法、第2態様に
おける、半導体部品実装済完成品の製造方法、及び第3
態様の半導体部品実装済完成品によれば、半導体部品を
基材に挿入後、挿入された半導体部品に対して回路パタ
ーンを形成することで実装を完成させる。よって、実装
時には異方性導電シートを用いない為、従来に比べて大
幅な生産性の向上とコストダウンが可能となる。又、上
記基材に挿入された半導体部品に対して回路パターンを
形成することから、従来発生したような半導体部品の基
材への沈み込みを防ぐことができ、その結果、回路パタ
ーンの断線が無く、高品質の半導体部品実装済部品及び
半導体部品実装済完成品を安定して生産することができ
る。
As described in detail above, in the first aspect of the present invention, the method for manufacturing a semiconductor component mounted component, in the second aspect, the method for manufacturing a semiconductor component mounted finished product, and
According to the completed semiconductor component mounted product of the aspect, after the semiconductor component is inserted into the base material, a circuit pattern is formed on the inserted semiconductor component to complete the mounting. Therefore, since the anisotropic conductive sheet is not used at the time of mounting, it is possible to significantly improve productivity and reduce costs as compared with the related art. In addition, since a circuit pattern is formed on the semiconductor component inserted into the base material, it is possible to prevent sinking of the semiconductor component into the base material as conventionally occurred, and as a result, disconnection of the circuit pattern is prevented. Therefore, it is possible to stably produce high-quality semiconductor component mounted components and semiconductor component mounted finished products.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施形態における半導体部品実装済
完成品の断面図である。
FIG. 1 is a sectional view of a completed semiconductor component mounted product according to an embodiment of the present invention.

【図2】 図1に示す半導体部品実装済完成品の製造過
程を説明するための図であり、ステップ101における
状態を示す図である。
FIG. 2 is a view for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a view showing a state in step 101.

【図3】 図1に示す半導体部品実装済完成品の製造過
程を説明するための図であり、ステップ102における
状態を示す図である。
FIG. 3 is a view for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a view showing a state in step 102.

【図4】 図1に示す半導体部品実装済完成品の製造過
程を説明するための図であり、ステップ103における
状態を示す図である。
FIG. 4 is a view for explaining the manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a view showing a state in step 103.

【図5】 図1に示す半導体部品実装済完成品の製造過
程を説明するための図であり、ステップ104における
状態を示す図である。
FIG. 5 is a diagram for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a diagram showing a state in step 104.

【図6】 図1に示す半導体部品実装済完成品の製造過
程を説明するための図であり、ステップ105における
状態を示す図である。
FIG. 6 is a view for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a view showing a state in step 105.

【図7】 図1に示す半導体部品実装済完成品の製造過
程を説明するための図であり、ステップ106における
状態を示す図である。
FIG. 7 is a diagram for explaining the manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a diagram showing a state in step 106.

【図8】 図1に示す半導体部品実装済完成品の製造過
程を説明するための図であり、ステップ107における
状態を示す図である。
FIG. 8 is a diagram for explaining the manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a diagram showing a state in step 107.

【図9】 図1に示す半導体部品実装済完成品に備わる
半導体部品実装済部品について、電子部品を回路パター
ン上に装着した状態を示す断面図である。
9 is a cross-sectional view showing a state in which electronic components are mounted on a circuit pattern with respect to the semiconductor component mounted components included in the completed semiconductor component mounted product shown in FIG.

【図10】 図9に示す半導体部品実装済部品をラミネ
ート処理した状態を示す断面図である。
10 is a cross-sectional view showing a state where the semiconductor component-mounted component shown in FIG. 9 is subjected to lamination processing.

【図11】 図1に示す半導体部品実装済完成品が非接
触ICカードの場合であって、該非接触ICカードに備
わる半導体部品実装済部品の平面図である。
11 is a plan view of the non-contact IC card when the completed semiconductor component mounted product shown in FIG. 1 is a non-contact IC card; FIG.

【図12】 図11に示すI−I部における断面図であ
る。
12 is a cross-sectional view taken along a line II shown in FIG.

【図13】 図11における非接触ICカードの上記I
−I部における断面図である。
FIG. 13 shows the above I of the non-contact IC card in FIG.
It is sectional drawing in the -I part.

【図14】 図11における非接触ICカードにて、ジ
ャンパーを設けた状態を示す平面図である。
FIG. 14 is a plan view showing a state in which a jumper is provided in the non-contact IC card in FIG. 11;

【図15】 図1に示す半導体部品実装済完成品の製造
過程を示すフローチャートである。
15 is a flowchart showing a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1;

【図16】 図7に示す半導体部品実装済部品の変形例
における断面図である。
FIG. 16 is a cross-sectional view of a modification of the semiconductor component-mounted component shown in FIG. 7;

【図17】 図16に示す半導体部品実装済部品にラミ
ネート処理を施した状態における断面図である。
17 is a cross-sectional view showing a state where the semiconductor component-mounted component shown in FIG. 16 has been subjected to lamination processing.

【図18】 図7に示す半導体部品実装済部品のさらに
別の変形例における断面図である。
FIG. 18 is a sectional view of still another modification of the component on which the semiconductor component is mounted shown in FIG. 7;

【図19】 図18に示す半導体部品実装済部品にラミ
ネート処理を施した状態における断面図である。
19 is a cross-sectional view showing a state where the semiconductor component-mounted component shown in FIG. 18 has been subjected to lamination processing.

【図20】 従来の非接触ICカードの構造を示す斜視
図である。
FIG. 20 is a perspective view showing the structure of a conventional non-contact IC card.

【図21】 従来の非接触ICカードの製造工程を示す
フローチャートである。
FIG. 21 is a flowchart showing a conventional non-contact IC card manufacturing process.

【図22】 従来の非接触ICカードの製造工程を示す
断面図である。
FIG. 22 is a cross-sectional view showing a conventional non-contact IC card manufacturing process.

【図23】 従来の非接触ICカードの製造工程を示す
断面図である。
FIG. 23 is a cross-sectional view showing a conventional non-contact IC card manufacturing process.

【図24】 従来の非接触ICカードの製造工程を示す
断面図である。
FIG. 24 is a cross-sectional view showing a conventional non-contact IC card manufacturing process.

【図25】 従来の非接触ICカードの製造工程を示す
断面図である。
FIG. 25 is a cross-sectional view showing a conventional non-contact IC card manufacturing process.

【図26】 従来の非接触ICカードの構造を示す断面
図である。
FIG. 26 is a sectional view showing the structure of a conventional non-contact IC card.

【図27】 従来の非接触ICカードにおける不具合状
態を示す断面図である。
FIG. 27 is a cross-sectional view showing a malfunction state in a conventional non-contact IC card.

【符号の説明】[Explanation of symbols]

101、102…非接触ICカード、113…バンプ、
114…半導体素子、115…部材形成面、116…回
路パターン、117…電極、118…回路接続用部材、
121…半導体部品実装済部品、122…第1熱可塑性
樹脂基材、123…パターン形成面、124…第2熱可
塑性樹脂基材、125…第3熱可塑性樹脂基材、128
…半導体部品実装済部品、129…電子部品。
101, 102: Non-contact IC card, 113: Bump,
114: semiconductor element, 115: member forming surface, 116: circuit pattern, 117: electrode, 118: circuit connecting member,
Reference numeral 121 denotes a component on which semiconductor components are mounted, 122 denotes a first thermoplastic resin base, 123 denotes a pattern forming surface, 124 denotes a second thermoplastic resin base, and 125 denotes a third thermoplastic resin base.
... Semiconductor component mounted parts, 129 ... Electronic parts.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮川 秀規 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 村上 慎司 大阪府高槻市幸町1番1号 松下電子工業 株式会社内 (72)発明者 原田 豊 大阪府高槻市幸町1番1号 松下電子工業 株式会社内 Fターム(参考) 5F044 KK02 KK19 KK23 QQ04 RR18 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hideki Miyagawa 1006 Kazuma Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (72) Shinji Murakami 1-1, Sachimachi, Takatsuki-shi, Osaka Matsushita Electronics Corporation No. (72) Inventor Yutaka Harada 1-1, Sachicho, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. F-term (reference) 5F044 KK02 KK19 KK23 QQ04 RR18

Claims (12)

【特許請求の範囲】[Claims] 【請求項1】 基材(122)に半導体部品(114)
を挿入するとともに、上記基材のパターン形成面(12
3)に上記半導体部品の回路接続部(113、117、
118)を露出させ、 上記回路接続部に接触して上記半導体部品と電気的に接
続され導電性ペーストにて形成される回路パターン(1
16)を上記パターン形成面上に形成することで当該回
路パターンへの上記半導体部品の実装を行う、 ことを特徴とする半導体部品実装済部品の製造方法。
1. A semiconductor component (114) on a substrate (122).
And the pattern forming surface (12
3) Circuit connection portions (113, 117,
118) is exposed, and is electrically connected to the semiconductor component by being in contact with the circuit connection portion, and the circuit pattern (1) formed of conductive paste is formed.
And 16) mounting the semiconductor component on the circuit pattern by forming step 16) on the pattern formation surface.
【請求項2】 上記基材は熱可塑性樹脂材にてなり、上
記半導体部品の上記基材への挿入は、上記半導体部品及
び上記基材を加熱しかつ上記半導体部品及び上記基材を
相対的に押圧することでなされ、上記回路接続部の電気
的接続面(115)を上記基材の上記パターン形成面に
露出させる、請求項1記載の半導体部品実装済部品の製
造方法。
2. The method according to claim 1, wherein the base is made of a thermoplastic resin material, and the semiconductor component is inserted into the base by heating the semiconductor component and the base and relative to the semiconductor component and the base. 2. The method of manufacturing a semiconductor component-mounted component according to claim 1, wherein the electrical connection surface of the circuit connection portion is exposed on the pattern forming surface of the base material. 3.
【請求項3】 上記回路接続部は上記半導体部品の電極
(117)である、請求項1又は2記載の半導体部品実
装済部品の製造方法。
3. The method according to claim 1, wherein the circuit connecting portion is an electrode of the semiconductor component.
【請求項4】 上記回路接続部は上記半導体部品の電極
(117)及び該電極上に形成したバンプ(113)で
あり、上記半導体部品の上記基材への挿入は、該バンプ
を露出させて行われる、請求項1又は2記載の半導体部
品実装済部品の製造方法。
4. The circuit connecting portion is an electrode (117) of the semiconductor component and a bump (113) formed on the electrode. Insertion of the semiconductor component into the base material exposes the bump. 3. The method of manufacturing a semiconductor component-mounted component according to claim 1, which is performed.
【請求項5】 上記回路接続部は上記半導体部品の電極
(117)、該電極上に形成したバンプ(113)、及
び該バンプの部材形成面(115)に形成した回路接続
用部材(118)であり、上記基材に上記半導体部品が
挿入されたとき上記回路接続用部材は上記パターン形成
面より突出した状態であり、上記回路パターンは上記回
路接続用部材に接触する、請求項1又は2記載の半導体
部品実装済部品の製造方法。
5. The circuit connecting portion includes an electrode (117) of the semiconductor component, a bump (113) formed on the electrode, and a circuit connecting member (118) formed on a member forming surface (115) of the bump. And wherein the circuit connection member projects from the pattern forming surface when the semiconductor component is inserted into the base member, and wherein the circuit pattern contacts the circuit connection member. A method for manufacturing the semiconductor component-mounted component described in the above.
【請求項6】 上記回路パターンの形成後、さらに、上
記回路パターン上に電子部品(129)を装着する、請
求項1ないし5のいずれかに記載の半導体部品実装済部
品の製造方法。
6. The method according to claim 1, further comprising, after forming the circuit pattern, mounting an electronic component on the circuit pattern.
【請求項7】 上記回路パターンは、上記半導体部品と
無線にて情報の送受信を行うためのアンテナコイル用形
状である、請求項1ないし6のいずれかに記載の半導体
部品実装済部品の製造方法。
7. The method according to claim 1, wherein the circuit pattern has a shape for an antenna coil for wirelessly transmitting and receiving information to and from the semiconductor component. .
【請求項8】 請求項1ないし7のいずれかに記載の半
導体部品実装済部品の製造方法にて製造された半導体部
品実装済部品を樹脂材(124、125)にて封止して
半導体部品実装済完成品を製造する、 ことを特徴とする半導体部品実装済完成品の製造方法。
8. A semiconductor component, wherein the semiconductor component-mounted component manufactured by the method for manufacturing a semiconductor component-mounted component according to claim 1 is sealed with a resin material (124, 125). A method for manufacturing a completed semiconductor component mounted product, comprising: manufacturing a mounted completed product.
【請求項9】 上記半導体部品実装済部品の上記樹脂材
による封止は、上記半導体部品実装済部品の厚み方向か
ら2つの樹脂材(124、125)にて上記半導体部品
実装済部品をサンドイッチしてなされる、請求項8記載
の半導体部品実装済完成品の製造方法。
9. The semiconductor component-mounted component is sealed with the resin material by sandwiching the semiconductor component-mounted component with two resin materials (124, 125) from the thickness direction of the semiconductor component-mounted component. 9. The method for manufacturing a completed semiconductor component mounted product according to claim 8, wherein the method is performed.
【請求項10】 上記樹脂材は熱可塑性樹脂シートにて
なり、該熱可塑性樹脂シートは加熱され上記半導体部品
実装済部品へ押圧されて上記半導体部品実装済部品の上
記封止を行う、請求項9記載の半導体部品実装済完成品
の製造方法。
10. The resin material is made of a thermoplastic resin sheet, and the thermoplastic resin sheet is heated and pressed against the semiconductor component mounted component to perform the sealing of the semiconductor component mounted component. 9. The method for producing a finished product having semiconductor components mounted thereon according to item 9.
【請求項11】 請求項1ないし10のいずれかに記載
の半導体部品実装済完成品の製造方法を用いて製造され
ることを特徴とする半導体部品実装済完成品。
11. A completed semiconductor component-mounted product manufactured using the method for manufacturing a completed semiconductor component-mounted product according to claim 1. Description:
【請求項12】 上記半導体部品実装済完成品は非接触
ICカードである、請求項11記載の半導体部品実装済
完成品。
12. The completed product with mounted semiconductor components according to claim 11, wherein the completed product with mounted semiconductor components is a non-contact IC card.
JP26539599A 1999-09-20 1999-09-20 Manufacturing method of semiconductor component mounted component, manufacturing method of semiconductor component mounted finished product, and finished semiconductor component mounted product Expired - Fee Related JP3891743B2 (en)

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CN1327515C (en) * 2003-08-29 2007-07-18 松下电器产业株式会社 Circuit board and method of manufacturing the same
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