JP2001087722A - Substrate treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate treating device capable of supplying a uniform treating liquid to a substrate from plural treating liquid supply means provided in a treating part. SOLUTION: This substrate treating device has the treating part 5 housing a wafer W and for applying a prescribed treatment on the wafer W, a 1st treating liquid supply part S1 provided in the treating part 5 and for supplying the treating liquid QM to the wafer W from a 1st direction, a 2nd treating liquid supply part S2 provided in the treating part 5 and for supplying the treating liquid QM to the wafer W from a 2nd direction different from the 1st direction and a treating liquid preparation part 10 communicating with the 1st treating liquid supply part S1 for supplying the treating liquid QM to the 1st treating liquid supply part S1, also communicated with the 2nd treating liquid supply part S2 to supply the treating liquid QM to the 2nd treating liquid supply part S2 and communicating with a 1st liquid chemical supply source, a 2nd liquid chemical supply source and a pure water supply source and for preparing the treating liquid QM from one of a 1st liquid chemical, a 2nd liquid chemical and pure water.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a predetermined process such as cleaning of a substrate by supplying a processing liquid to a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display, a glass substrate for a photomask, and a glass substrate for an optical disk. The present invention relates to a substrate processing apparatus for performing the above.

[0002]

2. Description of the Related Art In a conventional substrate processing apparatus of this type, a processing unit accommodates a wafer, which is a kind of substrate, and supplies a processing liquid to the wafer from a processing liquid supply unit such as a nozzle provided in the processing unit. It is configured to perform a predetermined process such as a substrate cleaning process.

For example, in a case where a processing liquid is supplied to the front surface and the back surface of a wafer, respectively, conventionally, as shown in FIG. Processing liquid supply unit 110 and processing liquid supply unit for back surface 12 that supplies processing liquid toward the back surface of wafer W
0 is provided in the processing unit 100, and the processing liquid supply unit 130 for the front surface supplies the processing liquid to the processing liquid supply unit 110 for the front surface, and the processing liquid for the back surface supplies the processing liquid to the processing liquid supply unit 120 for the back surface The supply unit 140 is provided separately.

Further, as a processing liquid supplied to the wafer W,
When using a mixed treatment liquid in which pure water and a chemical solution are mixed,
A processing liquid generating mechanism (not shown) for generating a processing liquid by mixing pure water and a chemical liquid has a processing liquid supply unit 130, 14.
0.

[0005]

However, the conventional substrate processing apparatus having such a configuration has the following problems.

That is, the conventional substrate processing apparatus is provided with the processing liquid supply units 130 and 140 for each of the plurality of processing liquid supply sections 110 and 120, so that the structure is complicated and the substrate processing apparatus itself becomes large. There is a problem of doing.

In the conventional substrate processing apparatus, the processing liquid to be supplied to each of the processing liquid supply units 110 and 120 is generated by a separate processing liquid generation mechanism. Also, it is not guaranteed that the processing liquid supplied to the back surface of the wafer W is generated at the same concentration, and it is not guaranteed that the processing liquid having the same concentration can be supplied to the front surface and the back surface of the wafer W. is there.

The present invention has been made in view of such circumstances, and is provided in a processing unit while simplifying the configuration of a processing liquid supply system of a substrate processing apparatus and reducing the size of the substrate processing apparatus. It is another object of the present invention to provide a substrate processing apparatus capable of supplying a uniform processing liquid from a plurality of processing liquid supply units to a substrate.

[0009]

In order to achieve the above object, a substrate processing apparatus according to a first aspect of the present invention includes a processing unit for storing a substrate and performing a predetermined process on the substrate, and a processing unit provided in the processing unit. A first processing liquid supply means for supplying a processing liquid to the substrate from a first direction; and a second processing liquid supply means provided in the processing unit for supplying the processing liquid to the substrate from a second direction different from the first direction. A processing liquid supply unit, the first processing liquid supply unit communicating with the first processing liquid supply unit to supply the processing liquid to the first processing liquid supply unit, and the second processing liquid supplying unit supplying the processing liquid to the second processing liquid supply unit; 2 communicates with the processing liquid supply means, and communicates with the first chemical liquid supply source, the second chemical liquid supply source, and the pure water supply source;
And a processing liquid generating section that generates a processing liquid by using any one of the first chemical liquid, the second chemical liquid, and pure water.

The "predetermined process" for the substrate in claim 1 may be a substrate cleaning process or the like. Further, the “treatment liquid” here includes a treatment liquid consisting of pure water only.

According to a second aspect of the present invention, there is provided the substrate processing apparatus according to the first aspect, wherein the processing liquid generating unit supplies and stops the processing liquid to the first processing liquid supply unit. Output side switching means for switching between
And a second output-side switching means for switching between supply and stop of the processing liquid to the processing liquid supply means.

According to a third aspect of the present invention, there is provided the substrate processing apparatus according to the first or second aspect, wherein the processing liquid generating unit is configured to switch the processing liquid generating unit from the first chemical liquid supply source. To switch between supply and stop of the first chemical solution
An inlet-side switching unit, and a second inlet-side switching unit that switches between supplying and stopping the second chemical solution from the second chemical solution supply source to the processing liquid generation unit.

The substrate processing apparatus according to a fourth aspect is the substrate processing apparatus according to the third aspect, wherein a pipe is provided between the processing liquid generating unit and the pure water supply source. The pipe is provided with third introduction-side switching means for switching between the supply of pure water from the pure water supply source to the treatment liquid generation unit and the stop thereof.

A substrate processing apparatus according to a fifth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein the processing liquid generating unit and the pure water supply source are provided between the processing liquid generating unit and the pure water supply source. A pipe is provided, and in the pipe, a flow rate detecting means for detecting a flow rate of the pure water flowing through the pipe, and a flow rate of the pure water flowing through the pipe is adjusted based on a flow rate value detected by the flow rate detecting means. And pressure adjusting means for adjusting the pressure.

The "pressure adjusting means" in claim 5
Is a pure water pressure adjusting means for adjusting the pressure based on the flow rate value detected by the flow rate detecting means to adjust the flow rate of the pure water flowing through the pipe. The "flow rate detecting means" is a pure water flow rate detecting means.

A substrate processing apparatus according to a sixth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein a substrate is disposed between the processing liquid generator and the first chemical liquid supply source. Comprises a pipe, a flow rate detecting means for detecting a flow rate of the first chemical solution flowing through the pipe, and a flow rate of the first chemical solution flowing through the pipe based on the flow rate value detected by the flow rate detecting means. And pressure adjusting means for adjusting the pressure.

The "pressure adjusting means" in claim 6
Is a first chemical liquid pressure adjusting means, which adjusts the pressure based on the flow rate value detected by the flow rate detecting means to adjust the flow rate of the first chemical liquid flowing through the pipe. Also,
"Flow rate detecting means" is a first chemical liquid flow rate detecting means.

A substrate processing apparatus according to a seventh aspect is the substrate processing apparatus according to any one of the first to third aspects, wherein the substrate processing apparatus is provided between the processing liquid generating unit and the second chemical liquid supply source. Is provided with a pipe, a flow rate detecting means for detecting a flow rate of the second chemical solution flowing through the pipe, and a flow rate of the second chemical solution flowing through the pipe based on the flow rate value detected by the flow rate detecting means. And pressure adjusting means for adjusting the pressure.

The "pressure adjusting means" in claim 7
Is a second chemical liquid pressure adjusting means, which adjusts the pressure based on the flow rate value detected by the flow rate detecting means to adjust the flow rate of the second chemical liquid flowing through the pipe. Also,
"Flow rate detecting means" is a second chemical liquid flow rate detecting means.

The substrate processing apparatus according to claim 8 is the substrate processing apparatus according to any one of claims 1 to 3, wherein a distance between the processing liquid generating unit and the pure water supply source is between the processing liquid generating unit and the pure water supply source. A pipe is provided, and the pipe is provided with a flow rate adjusting means for adjusting a flow rate of pure water supplied from the pure water supply source to the processing liquid generating section. The "flow rate adjusting means" in claim 8 is a pure water flow rate adjusting means.

A substrate processing apparatus according to a ninth aspect is the substrate processing apparatus according to any one of the first to third aspects, wherein the substrate processing apparatus is provided between the processing liquid generating unit and the first chemical liquid supply source. Is provided with a pipe, and the pipe is provided with a flow rate adjusting means for adjusting a flow rate of the first chemical liquid supplied from the first chemical liquid supply source to the processing liquid generation unit. The "flow rate adjusting means" of claim 9 is a first chemical liquid flow rate adjusting means.

A substrate processing apparatus according to a tenth aspect is the substrate processing apparatus according to any one of the first to third aspects, wherein the substrate processing apparatus is provided between the processing liquid generation unit and the second chemical liquid supply source. Is provided with a pipe, and the pipe is provided with a flow rate adjusting means for adjusting a flow rate of a second chemical liquid supplied from the second chemical liquid supply source to the processing liquid generation unit. . In the ninth aspect, the "flow rate adjusting means" is a second type.
It is a flow rate adjusting means for a chemical solution.

According to an eleventh aspect of the present invention, there is provided the substrate processing apparatus according to any one of the first to tenth aspects, wherein the processing liquid generating unit includes a first chemical liquid, a second chemical liquid and a pure chemical liquid. It has a concentration measuring means for measuring the concentration of the processing liquid generated in the processing liquid generating section by any of the water.

A substrate processing apparatus according to a twelfth aspect is the substrate processing apparatus according to any one of the first to eleventh aspects, wherein the processing unit includes: a holding unit configured to hold the substrate;
A driving unit for rotating the holding unit in a state of holding the substrate, wherein the first processing liquid supply unit supplies the processing liquid to the surface of the substrate held by the holding unit,
The second processing liquid supply means supplies the processing liquid to the back surface of the substrate held by the holding means.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a substrate processing apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing an overall configuration of a substrate processing apparatus according to the present invention, FIG. 2 is a piping diagram showing a processing liquid supply system and a configuration inside a cabinet, and FIG. FIG. 3 is a block diagram illustrating a configuration of a control system of the substrate processing apparatus. FIG.
2 and the dashed line arrows in FIG. 2 indicate the directions in which the liquids flow.

This substrate processing apparatus, as shown in FIG.
It is roughly divided into a main unit 1 and a cabinet unit 2. The main unit 1 is provided with a processing liquid supply system 3 and a control unit 4. In the processing liquid supply system 3, a processing unit 5 that accommodates a wafer W, which is a kind of substrate, and cleans the front and back surfaces of the wafer W is provided. The control unit 4 that controls each unit illustrated in FIGS. 1 and 3 is configured by, for example, a computer including a CPU, a memory, and the like.

As shown in FIG. 2, the processing liquid supply system 3 includes:
Pure water or a plurality of (two in this embodiment) chemicals (Q
1, Q2: For example, a combination of ammonia [NH ₄ OH] and aqueous hydrogen peroxide [H ₂ O ₂ ] or a combination of hydrochloric acid [HCl] and aqueous hydrogen peroxide [H ₂ O ₂ ]) is introduced. A processing liquid generator 10 for generating a processing liquid is provided. In this substrate processing apparatus, a processing liquid QM obtained by mixing pure water and two types of chemicals (Q1, Q2) at a predetermined concentration (hereinafter, this processing liquid is also referred to as a mixed processing liquid) QM And supplies it to the processing unit 5.

The pure water and each chemical solution are supplied to the pure water introduction pipe 11P and each of the chemical solution introduction pipes 11Q1 and 11Q connected to the cabinet 2.
It is introduced to the upstream side of the processing liquid generator 10 via Q2.
Each of the introduction pipes 11 (11P, 11Q1, and 11Q2) has a pressure regulator 12 (12P, 12Q1, 12Q) for individually adjusting the introduction pressure of each liquid introduced into the processing liquid generation unit 10.
Q2) are provided. In addition, introduction pipe 11P
Is a pipe for pure water and corresponds to a pipe for pure water, an inlet pipe 11Q1 is a pipe for first chemical liquid and corresponds to a pipe for first chemical liquid, and the inlet pipe 11Q2 is a pipe for second chemical liquid. It is an entrance pipe and corresponds to a second chemical liquid pipe. In addition, pressure regulator 12P
Is equivalent to a pure water pressure adjusting means, and the pressure regulator 12Q1
Corresponds to the first chemical liquid pressure adjusting means, and the pressure regulator 12
Q2 corresponds to a second chemical liquid pressure adjusting unit.

The pressure regulator 12 is provided on the secondary side, that is, the processing liquid generating unit 1 in accordance with the applied air pressure (pilot pressure).
This is a control valve for controlling the pressure of the liquid on the 0 side. Pressure regulator 1
By applying a constant pilot pressure to 2, the pressure of the liquid on the processing liquid generation unit 10 side of the pressure regulator 12 can be made constant, and the flow rate of the liquid flowing through the introduction pipe 11 can be made constant. Further, by changing the pilot pressure applied to the pressure regulator 12, the flow rate of the liquid flowing through the introduction pipe 11 can be changed.

Each pressure regulator 12P, 12Q1, 12Q2
Is performed by the control unit 4. The control unit 4 controls the flow rate sensor 71 in the cabinet unit 2.
PID control (P: proportional, I: integral, D: differential) based on the flow rates detected by P, 71Q1 and 71Q2 so that the flow rate of the liquid flowing through the introduction pipe 11 becomes a target flow rate (target value). ), Each pressure regulator 12P, 12Q
While sequentially determining the pilot pressure to be given to 1, 12Q2,
Control is performed to apply pilot pressure to each of the pressure regulators 12P, 12Q1, 12Q2 (see FIG. 3). The flow sensor 71P corresponds to pure water flow detecting means, the flow sensor 71Q1 corresponds to first chemical liquid flow detecting means, and the flow sensor 71Q2 corresponds to second chemical liquid flow detecting means.

Each of the entrance pipes 11 (11P, 11Q1,
11Q2), a flow control valve 13 (13P, 13Q1, 13Q2) for individually adjusting the introduction flow rate of each liquid to be introduced into the processing liquid generation unit 10 by restricting the flow path of each introduction pipe 11, a processing liquid generation unit Plural on-off valves 14 (14P, 14Q1, 14Q2) for individually switching the supply of each liquid to 10 and the stop thereof
Are also provided. Each flow control valve 13 is provided to prevent a large amount of liquid from flowing into the processing liquid property generating unit 10 at a stretch, and is configured to be manually adjusted in the present embodiment. In addition, each on-off valve 14P, 14
The opening and closing control of Q1 and Q2 is performed by the control unit 4.
The on-off valve 14P corresponds to a third introduction-side switching unit, the on-off valve 14Q1 corresponds to a first introduction-side switching unit, and the on-off valve 14Q2 corresponds to a second introduction-side switching unit.

Further, a bypass pipe 15 for supplying pure water to the processing liquid generating unit 10 without passing through the pressure regulator 12P, or a flow of pure water to the pressure regulator 12P side is passed through the pure water introduction pipe 11P. And a switch 16 comprising a three-way valve or the like for switching whether to flow to the bypass pipe 15 side.
The bypass pipe 15 has a flow rate control valve for adjusting the flow rate of the pure water to be introduced into the processing liquid generation unit 10 at a lower flow rate than when pure water is supplied to the processing liquid generation unit 10 through the pressure regulator 12P. 17 are provided. The control of the switching unit 16 and the flow control of the flow control valve 17 are performed by the control unit 4.

A first processing liquid supply pipe 20A for supplying the generated processing liquid to a first processing liquid supply section S1 and a second processing liquid supply section S2 provided in the processing section 5, and a second processing liquid supply The pipe 20B is led out from the downstream side of the processing liquid generation unit 10.

The processing liquid supply pipes 20 (20A, 20B) have opening / closing valves 21 (21A, 21B) for switching the supply of the generated processing liquid to the processing section 5 and stopping the processing liquid. A flow control valve 22 (22A, 22B) for individually adjusting the pressure loss by narrowing the flow path is provided. Each flow control valve 22A, 22B is connected to each flow control valve 22A, 22B.
The processing liquid supply units S1 and S2 are used when pressure loss in the supply pipes 20A and 20B is different due to differences in the lengths of the supply pipes 20A and 20B and the state of the pipes.
Are provided so that the same flow rate of the processing liquid can be supplied. The opening and closing control of each of the on-off valves 21A and 21B is performed by the control unit 4, and the flow control valves 22A and 22B are configured to be adjusted by, for example, a manual operation. The on-off valve 21A
Corresponds to a first output-side switching means, and includes an on-off valve 21B
Corresponds to a second output side switching means.

Further, the processing liquid generator 10 has a first processing liquid supply pipe 20A and a second processing liquid supply pipe 20B, which are downstream of the introduction parts of the respective liquids introduced into the processing liquid generator 10.
A density detection mechanism 30 corresponding to the density detection means is provided at a position on the upstream side of the above. The detection signal from the density detection mechanism 30 is provided to the control unit 4.

Here, a specific configuration example of the processing liquid generating section 10 will be described with reference to FIG. The processing liquid generation unit 10 illustrated in FIG. 4 includes a collecting pipe 40 that is connected to each of the introduction pipes 11P, 11Q1, and 11Q2, and the first processing liquid supply pipe 20A and the second processing liquid supply pipe 20B. In the configuration shown in FIG. 4, the pure water inlet 1 is provided at the base end on the upstream side of the collecting pipe 40.
1P is connected in communication, and the distal end on the downstream side of the collecting pipe 40 is closed. Further, the chemical liquid introduction pipes 11Q1 and 11Q2 and the first treatment liquid supply pipes 20A and 20B are connected to the side of the collecting pipe 40 in order from the upstream side, and a connection portion between the collecting pipe 40 and the introduction pipe 11Q2 is formed. The concentration detecting mechanism 30 is provided in the middle of the collecting pipe 40 between the pipe 40 and the connection portion between the first processing liquid supply pipe 20A.

An on-off valve 21A also serving as a flow control valve 22A, an on-off valve 21B serving also as a flow control valve 22B, and an on-off valve 14 (14P, 14Q1, 14Q).
2) are provided integrally with the collecting pipe 40.

As shown in FIG. 5, the on-off valve 21A and the on-off valve 21B are separated from the internal space 41a of the valve body 41 by the collecting pipe 40A.
A valve 42 is led out of the coil spring 43.
Urged upward. An air outlet 44 is provided above the side of the valve body 41, and an air outlet 45 is provided below the side. The air discharge port 45 is open to the atmosphere. On the other hand, an air supply pipe 46 is connected to the air supply port 44, and the air supply source GS connects the air supply port 44 (the internal space 41 of the valve body 41) through the air supply pipe 46.
(a) can be supplied with air. The supply of air to the air supply port 44 and the stop thereof can be performed by opening and closing, for example, an electromagnetic on-off valve 47 provided in the air supply pipe 46. An adjusting bolt 48 is screwed into the valve body 41.

As shown in FIG. 5A, in a normal state where the on-off valve 47 is closed and air is not supplied to the air supply port 44, the valve 42 is moved to the tip of the adjustment bolt 48 by the spring force of the coil spring 43. , And the supply ports 20a of the processing liquid supply pipes 20A and 20B are opened. On the other hand, as shown in FIG.
7 is opened and the air is supplied to the air supply port 44, the pressure of the supplied air overcomes the spring force of the coil spring 43, and the valve 42 is pushed down.
The supply ports 20a of A and 20B are closed. This allows
The function of each of the on-off valves 21A and 21B is realized. In addition, by manually adjusting the screwing amount of the adjustment bolt 48, the opening degree when the supply port 20a is opened can be adjusted, thereby realizing the functions of the flow control valves 22A and 22B.

As described above, the on-off valves 21A, 21B
Is a normally open type in which the valve 42 is open in a normal state. In the case of a slow leak described later, pure water is supplied from the collecting pipe 40 to the first treatment liquid without performing a special operation (supply of air). The supply pipe 20A and the second processing liquid supply pipe 20B can be supplied.

As shown in FIG. 6, each on-off valve 14 is
The adjustment bolt 48 shown in FIG. 5 is omitted, and the assembled position of the coil spring 43 is turned upside down.
Is configured to be pressed down, and the air supply port 44 is
It has the same configuration as the on-off valves 21A and 21B, except that the mounting position of the air outlet 45 and the air outlet 45 is reversed. That is, as shown in FIG. 6A, when the on-off valve 47 is closed and air is not supplied to the air supply port 44, the valve 42 is pushed down by the spring force of the coil spring 43, and the introduction pipe 11Q1 , 11Q2 inlet 11a
Is closed. On the other hand, in a state where the on-off valve 47 is opened and the air is supplied to the air supply port 44, the pressure of the supplied air exceeds the spring force of the coil spring 43, and the valve 42 is pushed upward, and the introduction pipe 11 (11Q1 , 11Q2) are opened. Thereby, the on-off valve 14Q
1, 14Q2 functions are realized.

As described above, the on-off valves 14Q1, 14Q
Q2 is a normally closed type in which the valve 42 is closed in a normal state.
The introduction of the chemicals Q1 and Q2 into the collecting pipe 40 can be stopped without performing a special operation (supply of air).

4 to 6, the on-off valve 4
7 is controlled by the control unit 4, and further by the control of the control unit 4, the on-off valves 21A, 21B, 14Q1, 1
Open and close 4Q2.

In the configuration shown in FIG. 4, the single flow control valves 13Q1 and 13Q2 are connected to the respective introduction pipes 11Q1 and 11Q2.
However, similarly to the open / close valves 21A and 21B, the open / close valves 14Q1 and 14Q2 may be provided with an adjustment bolt 48 to share the function of the flow rate control valves 13Q1 and 13Q2. Flow control valve 1 provided on inlet pipe 11P
Like the 3P and the on-off valve 14P, the single flow control valve 13
Q1, 13Q2 and a single on-off valve 14Q1, 14Q2 may be provided in each of the introduction pipes 11Q1, 11Q2.

In place of the single flow control valve 13P and the single open / close valve 14P provided in the pure water introduction pipe 11P, an open / close valve 14P having the same function as the flow control valve 13P is used similarly to the open / close valves 21A and 21B. May be provided integrally with the collecting pipe 40, or, similarly to the on-off valves 14Q1 and 14Q2 shown in FIGS. 4 and 6, the on-off valve 14P having only the opening and closing function may be provided integrally with the collecting pipe 40. Good.

Further, in the configuration shown in FIG. 4, the on-off valves 21A, 21B which also serve the functions of the flow control valves 22A, 22B.
Are provided integrally with the collecting pipe 40, but the on-off valves 21A, 21A
B is configured to have only the opening / closing function similarly to the opening / closing valves 14Q1 and 14Q2 shown in FIGS. 4 and 6, and the single flow control valve 22A and the flow control valve 22B are connected to the first processing liquid supply pipe 20A, The two treatment liquid supply pipes 20B may be provided respectively.

As shown in FIG. 7, the density detecting mechanism 30
A detection tube part (flow cell) 32 which is fitted into the conduit of the collecting tube 40 by two connecting parts 31 and the like and at least a part of which is formed of a light-transmitting material such as quartz.
A light projecting unit 33 for projecting the processing liquid QM flowing through the inside of the detection tube part 32 from the measurement light SL from a translucent portion, and a processing liquid QM
A light receiving unit that receives the measurement light SL passing through the light transmitting unit from a light-transmitting portion, and a concentration specifying unit that determines the concentration of the processing liquid QM based on the intensity of the measurement light SL received by the light receiving unit and gives the concentration to the control unit 4 45. Note that reference numeral 3 in FIG.
3a is a light source, 34 is a light receiving element such as a photodiode, 33b and 34b are optical fibers, 33c is a lens for collecting the measurement light SL from the light source a at the inlet of the optical fiber 33b, and 34c is emitted from the optical fiber 34b. A condenser lens is shown for the light receiving element 34a for measuring light SL.

It should be noted that a stirring mechanism such as a twisting plate is provided between the position where the liquid introduced into the collecting pipe 40 at the most downstream side and the position where the measuring light SL passes through the processing liquid QM to detect the concentration. Before performing the treatment, the concentration of the processing solution may be further uniformed.

Next, an example of the configuration of the processing unit 5 is shown in FIGS.
0 will be described. In the following processing unit 5, the direction in which the processing liquid QM is supplied from the first processing liquid supply unit S1 and the second processing liquid supply unit S2 toward each of the front and back surfaces of the wafer W is the first direction in the present invention. And the second direction.

The processing section shown in FIG. 8 includes a spin chuck 50 for holding and rotating the wafer W, and a spin chuck 50.
Processing liquid supply unit S that supplies the processing liquid QM toward the vicinity of the rotation center of the lower surface (usually, the back surface) of the wafer W held by the wafer W
1 and an upper nozzle corresponding to a second processing liquid supply unit S2 for supplying the processing liquid QM to the vicinity of the center of rotation of the upper surface (usually the surface) of the wafer W held by the spin chuck 50. And a recovery unit 51 for recovering the processing liquid QM used for processing the wafer W.

In this spin chuck 50, for example, a star-shaped spin base 50b is integrally rotatably connected to the upper end of a rotating shaft 50a that is rotated about an axis in a vertical direction by a motor MT. Holding members 50c are provided at the ends of the arm portions, and the outer peripheral portion of the wafer W is supported by the respective holding members 50c, and the outer peripheral edge of the wafer W is pressed and held, and is separated from the upper surface of the spin base 50b. Holds the wafer W. At least one of the holding members 50c can be switched between a state in which the outer peripheral end of the wafer W is pressed and held, and a state in which the holding of the wafer W is released apart from the outer peripheral end of the wafer W.

The lower nozzle S1 is provided, for example, in the collecting section 51, and the upper nozzle S2 is a processing position (position indicated by a solid line in FIG. 8) for supplying the processing liquid QM to the upper surface of the held wafer W. And a retracted position (a position indicated by a two-dot chain line in FIG. 8) deviating from the processing position.

The collecting section 51 receives and collects the used processing liquid QM scattered around the wafer W with the rotation, and collects and guides the used processing liquid QM to the lower discharge port 51. The collected used processing liquid QM is discharged through the collection pipe 60. Note that the spin chuck 50 and the collection unit 51 are configured to be relatively vertically movable up and down, and the spin chuck 50 protrudes above the collection unit 51 as shown by a two-dot chain line in FIG. Thus, loading / unloading of the wafer W can be performed.

The processing unit shown in FIG. 9 includes a spin chuck 52 that rotates while holding a wafer W,
An upper atmosphere blocking member 53 is provided in proximity to the wafer W held in the apparatus, and a collecting unit (not shown) similar to that shown in FIG. The spin chuck 52 includes a spin base 52b rotated by a motor MT together with a rotation shaft 52a.
Has a configuration similar to that of the spin chuck 50 shown in FIG. 8 except that three or more holding members 52c are provided around the upper surface thereof.

In the vicinity of the center of the spin base 52b, a lower processing liquid supply corresponding to the first processing liquid supply unit S1 for supplying the processing liquid QM toward the vicinity of the rotation center of the lower surface of the wafer W held by the holding member 52c. A mouth is provided. The opening at the tip of the lower processing liquid supply pipe 52d inserted into the hollow rotary shaft 52b is a lower processing liquid supply port S1. The first processing liquid supply pipe 20A is connected to a spin chuck 52 (rotating shaft 52).
During the rotation of a), the lower processing liquid supply port S1 and the processing liquid generator 10 are connected to each other via a connecting portion 52e with a rotary seal mechanism that connects the processing liquid QM to the lower processing liquid 52d so that the processing liquid QM can be supplied. I have.

The upper atmosphere blocking member 53 is
3a is connected to the lower end of a support shaft 53b suspended from the tip of 3a. Near the center of the upper atmosphere blocking member 53, an upper processing liquid supply port corresponding to a second processing liquid supply unit S2 that supplies the processing liquid QM toward the vicinity of the rotation center on the upper surface of the holding member 52c is provided. Hollow support shaft 53b
The opening at the end of the upper processing liquid supply pipe 53c inserted therein is an upper processing liquid supply port S2. Second treatment liquid supply pipe 20
B is connected in communication with the upper processing liquid supply pipe 53c, and connects the upper processing liquid supply port S2 and the processing liquid generator 10 with each other.

The support arm 53a is configured to be able to move up and down, and is moved between a processing position disposed close to the upper surface of the wafer W held by the holding member 53c and a retracted position separated from the upper surface of the wafer W. It is configured to be possible. Also,
A motor may be provided on the support arm 53a, and the upper atmosphere blocking member 53 may be rotated about the vertical axis together with the support shaft 53b. In this case, the upper atmosphere blocking member 53 (support shaft 5
The processing liquid QM can be supplied from the second processing liquid supply pipe 20B to the upper processing liquid supply pipe 53c even during the rotation of 3b).

The processing unit shown in FIG. 10 includes a spin chuck 54 for horizontally holding and rotating the wafer W, a lower brush cleaning mechanism 55 for brush cleaning the lower surface of the wafer W held on the spin chuck 54, and a spin chuck. An upper brush cleaning mechanism 56 for cleaning the upper surface of the wafer W held by the brush with a brush, and a collection unit (not shown) similar to FIG. 8 are provided.

The spin chuck 54 has a plurality of (three in FIG. 10) rotating rollers 54a (two in FIG. 10).
The roller support 54b is configured so as to be able to contact and separate from the wafer W, the respective roller supports 54b are brought close to each other, the wafer W is sandwiched by the rotating rollers 54, and the respective roller supports 54b are separated from each other. Release the holding of W. Rotating roller 54
a of the driving rollers 54a
a, the remaining rotating roller is a driven rotating roller 54ab,
The motor MT is linked to the driving roller 54aa, and the motor MT rotates the driving roller 54aa, whereby the wafer W is rotated while being held by the holding member 53c.

The brush cleaning mechanisms 55 and 56 respectively
Cleaning brushes 55c, 56 are attached to the lower ends of support shafts 55b, 56b suspended at the distal ends of the support arms 55a, 56a.
c is attached. The support arms 55a, 56a operate to raise and lower and horizontally move the cleaning brushes 55c, 56c, respectively.
6c can be moved between a processing position P1 where it abuts or slightly floats on the upper and lower surfaces of the wafer W and a retreat position P2 on the lateral side of the wafer W. In the movement range MH including
The cleaning brushes 55c and 56c are horizontally moved along the upper and lower surfaces of the wafer W, so that the entire upper and lower surfaces of the wafer W can be simultaneously brush-cleaned.

The support shafts 55b and 56b are rotatable with respect to the support arms 55a and 56a, and the brushes 55c and 56c are also rotated to clean the wafer W.

At the center of the cleaning brush 55c, a lower processing liquid supply port corresponding to the first processing liquid supply section S1 is provided. Lower processing liquid supply pipe 55d inserted into support shaft 55b
Is formed as a lower processing liquid supply port S1. The first processing liquid supply pipe 20A is connected to the lower processing liquid supply pipe 55d through a connection part with a rotary seal mechanism or the like (not shown), so that the first processing liquid supply pipe 20A can rotate the cleaning brush 55c (support shaft 55b). The processing liquid QM can be supplied from the processing liquid supply pipe 20A to the lower processing liquid supply pipe 55d, and the lower processing liquid supply port S1 and the processing liquid generator 10 are connected to each other.

Similarly, the upper cleaning brush mechanism 56 is provided with an upper processing liquid supply port corresponding to the second processing liquid supply section S2 with the cleaning brush 56c as the center. That is, the support shaft 5
The opening at the end of the upper processing liquid supply pipe 55d inserted into 6b forms an upper processing liquid supply port S2. The second processing liquid supply pipe 20B is, for example, a connecting portion with a rotary seal mechanism (not shown).
The upper processing liquid supply port S2 and the processing liquid generator 10 are connected to each other through the upper processing liquid supply pipe 55d.

When the cleaning brushes 55c and 56c are used for processing the wafer W as in the processing section shown in FIG.
The first processing liquid supply unit S1 and the second processing liquid supply unit S2 may be provided in the cleaning brushes 55c and 56c, for example.
As shown in FIG. 8, the lower nozzle and the upper nozzle may be configured as a first processing liquid supply unit S1 and a second processing liquid supply unit S2.

The operation control in the processing section 5 is carried out by referring to FIGS.
This is performed by the control unit 4 as shown by. 8 to 10 show an example of the processing unit 5, and the processing unit 5 to which the substrate processing apparatus according to the present invention can be applied is not limited to these configurations.

Next, returning to FIG. 2, the configuration of the cabinet section 2 will be described. A base end of the pure water introduction pipe 11P connected to the treatment liquid generation unit 10 is connected to a pure water supply source PS including a utility of a factory, and a part of the pure water introduction pipe 11P is connected to a cabinet. 2 is taken in. The pure water introduction pipe 11P is provided with a filter 70P for removing unnecessary substances and the like in the pure water and a flow sensor 71P for detecting a flow rate of the pure water flowing through the pure water introduction pipe 11P. The detection signal from the flow sensor 71P is provided to the control unit 4.

The chemical introduction pipe 11Q1 connected to the processing liquid generation unit 10 is connected at its base end to a first chemical supply source Q1S composed of a factory utility or the like, and is connected to one of the chemical introduction pipes 11Q1. The part is taken in the cabinet part 2. The chemical liquid introduction pipe 11Q1 has the chemical liquid Q1
A filter 70Q1 for removing unnecessary substances therein, a flow sensor 71Q1 for detecting a flow rate of the chemical solution Q1 flowing through the chemical solution introduction pipe 11Q1, and a pressure sensor 73Q1 are provided. Each detection signal from the flow sensor 71Q1 and the pressure sensor 73Q1 is provided to the control unit 4.

Further, the chemical liquid introduction pipe 11Q2, which is connected to the processing liquid generator 10, is connected at its base end to a first chemical liquid supply source Q2S composed of a factory utility or the like. The part is taken in the cabinet part 2. The chemical liquid introduction pipe 11Q2 has a chemical liquid Q2
A filter 70Q2 for removing unnecessary substances and the like therein, a flow sensor 71Q2 for detecting a flow rate of the chemical solution Q2 flowing through the chemical solution introduction pipe 11Q2, and a pressure sensor 73Q2 are provided. Each detection signal from the flow sensor 71Q2 and the pressure sensor 73Q2 is provided to the control unit 4.

Next, the processing operation of the substrate processing apparatus will be described. In the following, in the case of the processing unit of FIG.
And the case of the processing unit of FIG. 10 will be described simultaneously. Further, the concentration of the mixed processing liquid QM to be supplied to the wafer W may be determined in advance, or may be configured so that an operator can set the concentration using a setting device (not shown).

First, when the wafer W is loaded into the processing section 5, the spin chuck 50 (see FIG. 8), the spin chuck 52 (see FIG. 9), and the spin chuck 54 (see FIG. 10).
The wafer W is held horizontally.

Then, each of the spin chucks 50, 52, 5
The wafer W held at 4 is rotated, and the mixed processing liquid QM is supplied to the wafer W from the first processing liquid supply unit S1 and the second processing liquid supply unit S2 to perform processing. At this time, in the processing unit 4 of FIG. 10, the front and back surfaces of the wafer W are cleaned by the cleaning brushes 55c and 56c. Note that the mixed processing liquid QM is supplied to the on-off valve 14.
P, 14Q1, and 14Q2 are opened, and the processing liquid generation unit 10
, Pure water and each of the chemicals Q1 and Q2 are introduced therein, and are generated in the processing liquid generating unit 10.

Here, the flow rates of the pure water and the chemicals Q1 and Q2 introduced into the processing liquid generator 10 will be described. For example,
The flow rate of the pure water introduced into the processing liquid generation unit 10 is set to a predetermined flow rate, and the control unit 4 sets the flow rate as a target value of the pure water flow rate so that the flow rate detected by the flow rate sensor 71P becomes the target value. The pilot pressure applied to the pressure regulator 12P is adjusted by PID control.

When the flow rate of the pure water to be introduced into the processing liquid generating section 10 and the concentration of the mixed processing liquid QM are determined, the introduction flow rates of the chemicals Q1 and Q2 for generating the mixed processing liquid QM having the determined concentration are determined. . The control unit 4 calculates the introduction flow rates of the chemical liquids Q1 and Q2 into the processing liquid generation unit 10 based on the flow rate of the pure water to be introduced into the processing liquid generation unit 10 and the concentration of the mixed processing liquid QM. With the introduction flow rates of Q1 and Q2 as target values,
The pressure regulators 12Q1 and 12Q1 are controlled by PID control so that the respective flow rates detected by the flow rate sensors 71Q1 and 71Q2 become the respective target values.
By adjusting the pilot pressure applied to 12Q2, the processing liquid generation unit 10 generates a mixed processing liquid QM having a desired concentration.

Then, when it is time to supply the processing liquid from the first processing liquid supply section S1 and the second processing liquid supply section S2, the on-off valves 21A and 21B are switched from closed to open, so that the mixed processing liquid QM is discharged. The wafer W can be supplied from the first processing liquid supply unit S1 and the second processing liquid supply unit S2.
When stopping the supply of the mixed processing liquid QM to the wafer W, the on-off valves 21A and 21B are switched from open to closed.

The time for supplying the processing liquid from one of the processing liquid supply units (for example, S1) depends on the progress of the processing of the wafer W, and the other processing liquid supply unit (for example, S2). ), The opening / closing valve 21B for switching the supply / stop of the processing liquid to the other processing liquid supply unit S2 is first switched from open to closed, and then supplied. The opening / closing valve 21A for switching the supply / stop of the processing liquid to the one processing liquid supply unit S1 with a time difference is switched from open to closed.

The concentration of the mixed processing liquid Q generated by the processing liquid generating section 10 is detected by the concentration detecting mechanism 30, supplied to the control section 4, and monitored by the control section 4. Then, when the concentration of the currently generated mixed processing liquid QM is out of the desired concentration, the control unit 4 operates, for example, the alarm device 6 to execute an alarm process. Further, for example, the target value of the introduction flow rate of each of the chemical solutions Q1 and Q2 is corrected based on the difference between the concentration of the currently generated mixed processing liquid QM and the target concentration to generate the mixed processing liquid QM having the target concentration. May be adjusted and controlled.

When the processing for one wafer W is completed,
The holding of the wafer W by the spin chucks 50, 52, 54 is released, the processed wafer W is unloaded from the processing unit 6, the next wafer W is loaded into the processing unit 5, and the same processing operation as described above is performed. Then, the processing for the wafer W is performed.
Thereafter, the wafers W are similarly processed one after another.

In the substrate processing apparatus, a slow leak is performed while the processing on the wafer W is not performed, such as when the substrate processing apparatus is stopped. That is, the control unit 4 controls the on-off valves 14P, 21A,
21B is opened, the opening / closing valves 14Q1 and 14Q2 are closed, and the switch 16 is switched to introduce pure water into the processing liquid generating unit 10 at a small flow rate through the bypass pipe 15 and the flow control valve 17, and the processing liquid generating unit 10, control is performed such that pure water always flows at a small flow rate into the first processing liquid supply pipe 20A, the second processing liquid supply pipe 20B, the first processing liquid supply section S1, and the second processing liquid supply section S2. Accordingly, even when the processing on the wafer W is not performed, the processing liquid generation unit 10, the first processing liquid supply pipe 20A, the second processing liquid
Since pure water always flows through the piping systems such as the processing liquid supply pipe 20B, the first processing liquid supply unit S1, and the second processing liquid supply unit S2, it is possible to suppress the occurrence of bacteria in the piping systems.

In the case of performing a slow leak in the configuration of the conventional substrate processing apparatus, pure water is supplied at a small flow rate from the front-side processing liquid supply unit 130 to the front-side processing liquid supply unit 110, and the back-side processing liquid supply unit Pure water must flow at a small flow rate from 140 to the surface treatment liquid supply unit 120,
The amount of pure water used for slow leak increases. On the other hand, according to this substrate processing apparatus, a slow leak can be realized by introducing pure water at a small flow rate into a single processing liquid generating unit 10. The amount of pure water used for the slow leak can be reduced as compared with the case of (1).

By the way, in this substrate processing apparatus, the introduction of each liquid into the processing liquid generating section 10 is individually switched. For example, the processing liquid to be supplied to the wafer W is mixed with the mixed processing liquid QM. You can also switch with water.

In other words, if the open / close valves 14Q1 and 14Q2 are switched from open to closed while the open / close valve 14P is open in a state where the mixed treatment liquid QM is generated by the pure water and the chemicals Q1 and Q2, Only pure water is introduced into the liquid generator 10,
The processing liquid supplied to the wafer W can be switched from the mixed processing liquid QM to pure water, and the open / close valves 14Q1, 14Q
When the liquid 2 is returned from the closed state to the open state, the pure water and the chemical liquids Q1 and Q2 are introduced into the processing liquid generation unit 10, and the processing liquid supplied to the wafer W can be switched from the pure water to the mixed processing liquid QM.

With such an operation, for example, first,
The first processing such as chemical cleaning is performed by supplying the mixed processing liquid QM to the wafer W, and subsequently, in the same processing unit 5, rinsing cleaning or the like in which only pure water is supplied to the wafer W to wash out the chemical. A second process can be performed. Note that the wafer W
If the rotation of the wafer W is continued after the supply of the pure water to the wafer W is stopped, the processing liquid adhering to the wafer W can be shaken off to dry the wafer W.

When the processing liquid supplied to the wafer W is switched between the mixed processing liquid QM and the pure water, the mixed processing liquid QM used for the processing can be reused, but the mixed processing liquid QM used for the processing can be reused. Pure water is discarded because it cannot be reused.

Therefore, when the mixed processing liquid QM is reused, it is necessary to send only the used mixed processing liquid QM to a processing liquid tank (not shown) and discard the used pure water. This is achieved, for example, by providing a switching means in the middle of the recovery pipe 60 so that the recovered processing liquid can be switched to a processing liquid tank or to be discarded, and the used mixed processing liquid QM can be recovered. In such a case, it is also possible to realize that the switching means is switched so as to send it to the processing liquid tank, and when the used pure water is recovered, the switching means is switched so as to discard it.

In the configuration described above, the used mixed processing solution QM and the used pure water are mixed between the recovery section in the processing section 5 and the switching means, and the concentration change of the reuse processing liquid is reduced. Easy to get up.

Therefore, it is desirable that the processing section 5 be configured to separate and collect the used mixed solution QM and the used pure water.

Such a collecting section capable of separating and collecting may be configured as shown in FIGS. 11 and 12, for example. In FIGS. 11 and 12, the configuration of the processing mechanism such as the spin chuck is the processing mechanism shown in FIG. 8, but may be the processing mechanism shown in FIG. 9 or FIG.

The collecting unit 90 shown in FIG. 11 receives the used processing liquid scattered around the wafer W with the rotation and receives the used processing liquid downward, and guides the used processing liquid downward, and the used liquid guided by the guiding unit 90a. And a collection tank 90b for collecting the processing liquid. The guide portion 90a is provided with a first guide portion 90aa and a second guide portion 90ab which are vertically separated. Also,
The recovery tank 90b is provided with a first recovery tank 90ba for recovering the used processing liquid (pure water in FIG. 11) guided by the first guide portion 90aa, and a used liquid guided by the second guide portion 90ab. A second process for recovering the subsequent processing liquid (the mixed processing liquid in FIG. 11)
And the collecting tank 90bb is provided concentrically. Then, the guide portion 90a, the recovery tank 90b, and the spin chuck 50 are configured to be able to move up and down relatively, and FIG.
In the states shown in (b), different types of processing liquids (mixed processing liquid QM and pure water only) are separated and collected. In addition,
FIG. 11C shows a state of loading / unloading the wafer W. Reference numeral 95 in FIGS. 11 and 12 denotes a waste pipe.

The collecting section 91 shown in FIG. 12 includes first and second collecting ports 91aa and 91ab provided on the upper and lower sides.
A first guide / recovery tank 91ba that is scattered around the wafer W with the rotation, receives the used processing liquid (pure water in FIG. 12) received from the first recovery port 91aa, and guides and recovers the processing liquid downward. And a first guide collection tank 91bb that scatters around the wafer W, receives used processing liquid (pure water in FIG. 12) received from the second recovery port 91ab, and guides it downward to collect it. It is configured integrally. The recovery unit 91 and the spin chuck 50 are configured to be relatively movable up and down, and in a state shown in FIGS. 12A and 12B, different types of processing liquids are separated and recovered. FIG.
(C) shows the loading / unloading state of the wafer W.

In this substrate processing apparatus, the introduction of each liquid into the processing liquid generator 10 is individually switched. For example, by changing the type of liquid to be mixed, a plurality of types of mixing processing are performed. Liquid, for example, pure water, a first mixed treatment liquid in which a first chemical liquid Q1 and a second chemical liquid Q2 are mixed, or pure water and a first mixed liquid.
It is also possible to generate a second mixed processing liquid or the like obtained by mixing the above-mentioned chemical liquids Q1 and supply the mixed processing liquid to the wafer W by switching.

In this embodiment, a case where two kinds of chemicals are introduced into the processing liquid generator 10 is described as an example.
The present invention can be similarly applied to a case where one type of chemical is introduced into the treatment liquid generator 10 (for example, a case where pure water and hydrofluoric acid [HF] are mixed). Further, the present invention can be similarly applied to a case where three or more types of chemicals are introduced into the processing liquid generator 10.

As described above, according to the present embodiment, the processing liquid to be supplied to the first processing liquid supply section S1 and the second processing liquid supply section S2 provided in the processing section 5 is formed into a single processing liquid. Since it is configured to be generated by the unit 10, the structure can be simplified and the size of the apparatus can be reduced, and the wafers W are supplied from the first processing liquid supply unit S1 and the second processing liquid supply unit S2, respectively. The concentration of the processing solution to be processed can be made uniform. In addition, on-off valve 2
1A and 21B (first output side switching means, second output side switching means), the first processing liquid supply section S
1. The supply of the processing liquid from the second processing liquid supply unit S2 to the wafer W can be individually switched. For example, the processing liquid from the first processing liquid supply unit S1 and the second processing liquid supply unit S2 to the wafer W can be switched. It is also possible to perform processing while changing the supply time.

Further, an on-off valve 14 (14P, 14P) for individually switching the introduction and stop of each liquid to the processing liquid generation unit 10.
Q1 and 14Q2), the liquid to be introduced into the processing liquid generation unit 10 can be selectively switched, and a processing liquid in which a desired liquid is mixed is generated and supplied to the wafer W, or pure water can be supplied. Alone can be supplied to the wafer W, and the introduction of the pure water and the chemical solution and the introduction of the reuse processing liquid can be switched.

Further, since the concentration detecting mechanism 30 for detecting the concentration of the generated processing liquid is provided, the concentration of the processing liquid generated by the processing liquid generating unit 10 can be monitored, and the concentration of the processing liquid generated by the processing liquid generating unit 10 can be monitored. It is possible to feed back to the generation of the liquid.

The substrate processing apparatus of the present invention is not limited to the above embodiment. Processing liquid generator 10
The configuration of the cabinet 2 and the like is not limited to the above-described embodiment.

The present invention can be applied to a substrate processing apparatus provided with a first processing liquid supply unit and a second processing liquid supply unit for supplying a processing liquid to a wafer W from at least two directions. In the case where three or more processing liquid supply units for supplying the processing liquid to the wafer W from three or more directions are provided in the processing unit, a configuration similar to that of the above-described embodiment is used.
The processing liquid generation unit and each processing liquid supply unit are individually connected and connected, and each output side switching means for individually supplying and stopping the processing liquid to each processing liquid supply unit is provided in the processing liquid generation unit. Just do it.

[0097]

As described in detail above, claim 1
According to the substrate processing apparatus described in the above, the processing liquid generator communicates with the first processing liquid supply means so as to supply the processing liquid to the first processing liquid supply means, and supplies the processing liquid to the second processing liquid supply means. It communicates with the second treatment liquid supply means so as to supply it, and communicates with the first chemical liquid supply source, the second chemical liquid supply source, and the pure water supply source. Since the processing liquid is generated by any of the above, the configuration of the processing liquid supply system of the substrate processing apparatus is simplified, and the size of the substrate processing apparatus is reduced, while the processing liquid is supplied from a plurality of processing liquid supply units provided in the processing unit. A uniform processing liquid can be supplied to the substrate.

According to the substrate processing apparatus of the second aspect,
The processing liquid generation unit has a first output side switching unit and a second output side switching unit, and the first output side switching unit switches between supplying and stopping the processing liquid to the first processing liquid supply unit, Since the second output-side switching means switches between supplying and stopping the processing liquid to the second processing liquid supply means,
The supply of the processing liquid from the first processing liquid supply unit and the second processing liquid supply unit to the substrate can be individually switched.

According to the substrate processing apparatus of the third aspect,
The processing liquid generation unit has a first input side switching unit and a second input side switching unit, and the first input side switching unit supplies and supplies the first chemical liquid from the first chemical liquid supply source to the processing liquid generation unit. The stop is switched, and the second input side switching means is switched to the second input side.
Since the supply and the stop of the second chemical liquid from the chemical liquid supply source to the processing liquid generation unit are switched, the liquid introduced into the processing liquid generation unit can be selectively switched, and the processing in which the desired liquid is mixed can be performed. Generate liquid and supply it to the substrate, or
It is also possible to supply only pure water to the substrate.

According to the substrate processing apparatus of the fourth aspect,
A pipe is provided between the processing liquid generation unit and the pure water supply source, and a third input-side switching unit provided in the pipe supplies pure water from the pure water supply source to the processing liquid generation unit and the same. Since the stop is switched, it is possible to adjust the amount of pure water when generating a treatment liquid in which a desired liquid is mixed.

According to the substrate processing apparatus of the fifth aspect,
A pipe is provided between the processing liquid generation unit and the pure water supply source, and based on the flow rate value detected by the flow rate detection unit,
Since the pressure of the pure water flowing through the pipe is adjusted by the pressure regulator, the amount of pure water supplied to the processing liquid generation unit can be finely adjusted.

According to the substrate processing apparatus of the sixth aspect,
A pipe is provided between the processing liquid generating unit and the first chemical liquid supply source, and the pressure of the first chemical liquid flowing through the pipe is adjusted by the pressure regulator based on the flow rate value detected by the flow rate detecting means. In addition, fine adjustment of the first chemical liquid supplied to the processing liquid generation unit can be achieved.

According to the substrate processing apparatus of the seventh aspect,
A pipe is provided between the processing liquid generation unit and the second chemical liquid supply source, and the pressure of the second chemical liquid flowing through the pipe is adjusted by the pressure regulator based on the flow rate value detected by the flow rate detecting means. In addition, fine adjustment of the second chemical solution supplied to the processing liquid generation unit can be achieved.

According to the substrate processing apparatus of the eighth aspect,
A pipe is provided between the processing liquid generation unit and the pure water supply source, and a flow rate adjustment unit provided in the pipe adjusts a flow rate of the pure water supplied from the pure water supply source to the processing liquid generation unit. Therefore, it is possible to adjust the flow rate of the pure water supplied to the processing liquid generation unit.

According to the substrate processing apparatus of the ninth aspect,
A pipe is provided between the processing liquid generation section and the first chemical liquid supply source, and a flow rate adjusting means provided in the pipe controls a flow rate of the first chemical liquid supplied from the first chemical liquid supply source to the processing liquid generation section. Since the adjustment is performed, the flow rate of the first chemical solution supplied to the processing liquid generation unit can be adjusted.

According to the substrate processing apparatus of the tenth aspect, a pipe is provided between the processing liquid generating section and the second chemical liquid supply source, and the flow rate adjusting means provided in the pipe is provided with a second chemical liquid supply. Since the flow rate of the second chemical liquid supplied from the source to the processing liquid generation unit is adjusted, the flow rate of the second chemical liquid supplied to the processing liquid generation unit can be adjusted.

[0107] According to the substrate processing apparatus of the eleventh aspect, the concentration measuring means of the processing liquid generating unit includes the first chemical liquid,
Since the concentration of the processing liquid generated in the processing liquid generation unit by one of the second chemical solution and pure water is measured, the concentration of the processing liquid generated in the processing liquid generation unit is monitored, and further,
It is possible to feed back to the generation of the processing liquid in the processing liquid generation unit.

According to the substrate processing apparatus of the twelfth aspect, in the processing section, the first processing liquid supply unit is rotated by rotating the holding unit holding the substrate, and the surface of the substrate is held by the holding unit. And the second processing liquid supply means supplies the processing liquid to the back surface of the substrate held by the holding means, so that uniform processing liquid is supplied from each processing liquid supply means to the front and back surfaces of the substrate. It can be supplied reliably.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an overall configuration of a substrate processing apparatus according to the present invention.

FIG. 2 is a piping diagram showing a processing liquid supply system and a configuration inside a cabinet.

FIG. 3 is a block diagram illustrating a configuration of a control system of the substrate processing apparatus according to the present invention.

FIG. 4 is a partial cross-sectional view illustrating a specific configuration example of a processing liquid generation unit.

FIG. 5 is a longitudinal sectional view showing a configuration of an example of an on-off valve on the output side.

FIG. 6 is a longitudinal sectional view showing a configuration of an example of an on-off valve.

FIG. 7 is a front view illustrating a configuration of an example of a density detection mechanism.

FIG. 8 is a plan view showing a configuration example of a processing unit and a partially omitted front view.

FIG. 9 is a plan view and a partially omitted front view showing another configuration example of the processing unit.

FIG. 10 is a plan view and a partially omitted front view showing still another configuration example of the processing unit.

FIG. 11 is a longitudinal sectional view illustrating a configuration of an example of a collecting unit.

FIG. 12 is a longitudinal sectional view showing a configuration of another example of the collecting unit.

FIG. 13 is a diagram showing a schematic configuration of a conventional substrate processing apparatus.

[Explanation of symbols]

 Reference Signs List 3 treatment liquid supply system 4 control unit 5 treatment unit 10 treatment liquid generation unit 11 introduction pipe (pipe) 11P introduction pipe 11Q1 introduction pipe 11Q2 introduction pipe 12 pressure regulator (pressure regulation means) 12P pressure regulator 12Q1 pressure regulator 12Q2 pressure Controller 13 Flow control valve (flow control means) 13P Flow control valve 13Q1 Flow control valve 13Q2 Flow control valve 14 On / off valve 14P Open / close valve (third introduction side switching means) 14Q1 On / off valve (First introduction side switching means) 14Q2 Open / close Valve (second introduction-side switching means) 15 bypass pipe 16 switch 17 flow rate regulating valve 20A on-off valve (first output-side switching means) 20B on-off valve (second output-side switching means) 30 concentration detection mechanism 50 spin chuck 50b spin Base 50c Holding member 52 Spin chuck 52b Spin base 52c Holding section 54 Spin chuck 54a Rotary roller 54b Roller support 71 Flow rate detection sensor (flow rate detection means) 71P Flow rate detection sensor 71Q1 Flow rate detection sensor 71Q2 Flow rate detection sensor W Wafer S1 First processing liquid supply section S2 Second processing liquid supply section QM Processing liquid (Mixing treatment liquid) Q1 First chemical liquid Q2 Second chemical liquid PS Pure water supply source Q1S First chemical liquid supply source Q2S Second chemical liquid supply source MT Motor

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Koji Yamashita 1-4-1 Tenjin Kitamachi Kitamachi, Horikawa-dori-Terauchi, Kamigyo-ku, Kyoto-shi Dainippon Screen Mfg. Co., Ltd. (72) Kenji Fujii Kamigyo, Kyoto-shi 4-chome Tenjin, Horikawa-dori Terunouchi-ku 1-1-1 Kita-machi 1 Dainippon Screen Mfg. Co., Ltd. F-term (reference) 3B116 AA03 AB34 AB42 AB47 BA02 BA13 BB03 BB24 BB90 CC01 CC03 CD22 3B201 AA03 AB34 AB42 AB47 BA02 BA13 BB05 BB24 BB90 BB92 BB93 BB96 CC01 CC13 CD22

Claims (12)

[Claims] A processing unit configured to store the substrate and perform a predetermined processing on the substrate; a first processing liquid supply unit provided in the processing unit and configured to supply a processing liquid to the substrate from a first direction; A second processing liquid supply unit provided in the unit and configured to supply a processing liquid to the substrate from a second direction different from the first direction; and a second processing liquid supply unit configured to supply the processing liquid to the first processing liquid supply unit. A first treatment liquid supply source, a second treatment liquid supply source, a first treatment liquid supply source, a second treatment liquid supply source, a first treatment liquid supply source, and a second treatment liquid supply source; And a processing liquid generation unit that is in communication with a pure water supply source and generates a processing liquid by using one of the first chemical liquid, the second chemical liquid, and pure water. 2. The substrate processing apparatus according to claim 1, wherein the processing liquid generating unit switches a supply of the processing liquid to the first processing liquid supply unit and a stop thereof, and a first output side switching unit. And a second output-side switching means for switching between supplying and stopping the processing liquid to the second processing liquid supply means. 3. The substrate processing apparatus according to claim 1, wherein the processing liquid generation unit supplies a first chemical liquid from the first chemical liquid supply source to the processing liquid generation unit, and supplies the first chemical liquid to the processing liquid generation unit. A first introduction-side switching means for switching the stop; and a second introduction-side switching means for switching the supply of the second chemical liquid from the second chemical liquid supply source to the processing liquid generation unit and the stop thereof. Substrate processing equipment. 4. The substrate processing apparatus according to claim 3, wherein a pipe is provided between the processing liquid generation unit and the pure water supply source, and the pipe is provided with the pure water supply source. To switch the supply of pure water to the processing liquid generator from the supply of water and the stop thereof
A substrate processing apparatus provided with an introduction-side switching unit. 5. The substrate processing apparatus according to claim 1, wherein a pipe is provided between the processing liquid generation unit and the pure water supply source. A flow rate detecting means for detecting a flow rate of the pure water flowing through the pipe; and a pressure adjusting means for adjusting a flow rate of the pure water flowing through the pipe based on a flow rate value detected by the flow rate detecting means. A substrate processing apparatus characterized by the above-mentioned. 6. The substrate processing apparatus according to claim 1, wherein a pipe is provided between the processing liquid generating unit and the first chemical liquid supply source. Flow rate detecting means for detecting the flow rate of the first chemical solution flowing through the pipe, and pressure adjusting means for adjusting the flow rate of the first chemical solution flowing through the pipe based on the flow rate value detected by the flow rate detecting means. A substrate processing apparatus provided. 7. The substrate processing apparatus according to claim 1, wherein a pipe is provided between the processing liquid generation unit and the second chemical liquid supply source. Flow rate detecting means for detecting the flow rate of the second chemical solution flowing through the pipe, and pressure adjusting means for adjusting the flow rate of the second chemical solution flowing through the pipe based on the flow rate value detected by the flow rate detecting means. A substrate processing apparatus provided. 8. The substrate processing apparatus according to claim 1, wherein a pipe is provided between the processing liquid generating unit and the pure water supply source, and the pipe is connected to the processing liquid generating unit. And a flow rate adjusting means for adjusting a flow rate of pure water supplied from the pure water supply source to the processing liquid generating section. 9. The substrate processing apparatus according to claim 1, wherein a pipe is provided between the processing liquid generating section and the first chemical liquid supply source. And a flow rate adjusting means for adjusting a flow rate of the first chemical liquid supplied from the first chemical liquid supply source to the processing liquid generating section. 10. The substrate processing apparatus according to claim 1, wherein a pipe is provided between the processing liquid generating unit and the second chemical liquid supply source. A flow rate adjusting means for adjusting a flow rate of a second chemical liquid supplied from the second chemical liquid supply source to the processing liquid generating unit. 11. The substrate processing apparatus according to claim 1, wherein the processing liquid generation unit performs the processing by using any one of a first chemical liquid, a second chemical liquid, and pure water. A substrate processing apparatus comprising: a concentration detection unit configured to detect a concentration of a processing liquid generated in a liquid generation unit. 12. The substrate processing apparatus according to claim 1, wherein the processing unit rotates the holding unit that holds the substrate and the holding unit that holds the substrate. And a driving unit, wherein the first processing liquid supply unit supplies the processing liquid to the back surface of the substrate held by the holding unit, and the second processing liquid supply unit is held by the holding unit. A substrate processing apparatus for supplying a processing liquid to a surface of a substrate.