US11998954B2 - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing method Download PDFInfo
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- US11998954B2 US11998954B2 US17/822,184 US202217822184A US11998954B2 US 11998954 B2 US11998954 B2 US 11998954B2 US 202217822184 A US202217822184 A US 202217822184A US 11998954 B2 US11998954 B2 US 11998954B2
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- 239000000758 substrate Substances 0.000 title claims abstract description 179
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B17/00—Methods preventing fouling
- B08B17/02—Preventing deposition of fouling or of dust
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Definitions
- the exemplary embodiments described herein pertain generally to a substrate processing apparatus and a substrate processing method.
- Patent Document 1 discloses a substrate processing apparatus equipped with a liquid processing unit configured to process a substrate by supplying a plurality of types of processing liquids to the substrate and an exhaust unit configured to exhaust an atmosphere in the liquid processing unit to the outside.
- the exhaust unit includes a plurality of individual exhaust pipes respectively corresponding to the types of processing liquids and a switching unit configured to guide a gas exhausted from the liquid processing unit to any one of the individual exhaust pipes. For example, if a gas or mist is generated when a predetermined processing liquid is supplied to the substrate in the liquid processing unit, the switching unit switches a flow path to connect the liquid processing unit with an individual exhaust pipe corresponding to the kind of the predetermined processing liquid.
- a substrate processing apparatus includes a liquid processing unit configured to supply, onto a front surface of a substrate, individual multiple processing liquids including a first processing liquid and a second processing liquid different from the first processing liquid; and an exhaust unit configured to exhaust an exhaust gas exhausted from the liquid processing unit to an outside, the exhaust gas including a first exhaust gas exhausted from the liquid processing unit when the substrate is processed with the first processing liquid and a second exhaust gas exhausted from the liquid processing unit when the substrate is processed with the second processing liquid.
- the exhaust unit includes a main exhaust pipe configured to allow the exhaust gas to flow therein, the main exhaust pipe including a first portion located on an upstream side and a second portion located on a downstream side of the first portion; a first individual exhaust pipe configured to allow the first exhaust gas to flow therein; a second individual exhaust pipe configured to allow the second exhaust gas to flow therein; and a switching unit configured to selectively communicate the main exhaust pipe with one of the first individual exhaust pipe and the second individual exhaust pipe.
- the switching unit includes a first switching mechanism provided between the first portion and the first individual exhaust pipe and configured to switch between a communication state where the first portion communicates with the first individual exhaust pipe when the first exhaust gas is exhausted from the liquid processing unit and a non-communication state where the first portion does not communicate with the first individual exhaust pipe when the exhaust gas other than the first exhaust gas is exhausted from the liquid processing unit; a second switching mechanism provided between the second portion and the second individual exhaust pipe and configured to switch between a communication state where the second portion communicates with the second individual exhaust pipe when the second exhaust gas is exhausted from the liquid processing unit and a non-communication state where the second portion does not communicate with the second individual exhaust pipe when the exhaust gas other than the second exhaust gas is exhausted from the liquid processing unit; a third switching mechanism provided between the first portion and the second portion of the main exhaust pipe and configured to switch between a closed state where a flow of the first exhaust gas to the second portion is blocked when the first exhaust gas is exhausted from the liquid processing unit and an open state where a flow of the exhaust gas other than the first exhaust gas to the second
- FIG. 1 is a schematic plan view illustrating an example of a substrate processing system
- FIG. 2 is a schematic side view illustrating the substrate processing system of FIG. 1 ;
- FIG. 3 is a schematic side view illustrating an example of a liquid processing unit
- FIG. 4 is a schematic diagram illustrating an example of the liquid processing unit and an exhaust unit
- FIG. 5 is a partially enlarged view schematically illustrating the exhaust unit of FIG. 4 , and illustrates a state where a main exhaust pipe communicates with an individual exhaust pipe for an organic-based exhaust gas;
- FIG. 6 is a block diagram illustrating main components of the substrate processing system
- FIG. 7 is a schematic diagram illustrating an example of a hardware structure of a controller
- FIG. 8 is a partially enlarged view schematically illustrating the exhaust unit of FIG. 4 , and illustrates a state where the main exhaust pipe communicates with an individual exhaust pipe for an alkali-based exhaust gas;
- FIG. 9 is a partially enlarged view schematically illustrating the exhaust unit of FIG. 4 , and illustrates a state where the main exhaust pipe communicates with an individual exhaust pipe for an acid-based exhaust gas;
- FIG. 10 is a schematic diagram illustrating another example of the exhaust unit
- FIG. 11 is a schematic diagram illustrating yet another example of the exhaust unit.
- FIG. 12 is a schematic diagram illustrating still yet another example of the exhaust unit.
- the substrate processing system 1 is equipped with a carry-in/out station 2 , a processing station 3 and a controller Ctr.
- the carry-in/out station 2 and the processing station 3 may be arranged side by side in, for example, a horizontal direction.
- the substrate W may have a circular plate shape, or may have a plate shape, such as a polygon, other than a circle.
- the substrate W may have a groove portion that is partially cut out.
- the groove portion may be, for example, a notch (a U-shaped or V-shaped groove) or a linear portion (so-called orientation flat) extending linearly.
- the substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, a flat panel display (FPD) substrate, or any of various other kinds of substrates.
- the substrate W may have a diameter of, e.g., about 200 mm to about 450 mm.
- the carry-in/out station 2 includes a placing section 4 , a carry-in/out section 5 and a shelf unit 6 .
- the placing section 4 includes a plurality of placing tables (not shown) arranged in a width direction (up-and-down direction in FIG. 1 ). Each placing table is configured to place a carrier 7 (receptacle) thereon.
- the carrier 7 is configured to accommodate at least one substrate W in a sealed state.
- the carrier 7 includes an opening/closing door (not shown) through which the substrate W is carried in and out.
- the carry-in/out section 5 is placed adjacent to the placing section 4 in a direction in which the carry-in/out station 2 and the processing station 3 are arranged (left-and-right direction in FIG. 1 ).
- the carry-in/out section 5 includes an opening/closing door (not shown) provided to correspond to the placing section 4 .
- the carry-in/out section 5 incorporates therein a transfer arm A 1 and the shelf unit 6 .
- the transfer arm A 1 is configured to be movable horizontally in the width direction (up-and-down direction in FIG. 1 ), movable up and down in a vertical direction (up-and-down direction in FIG. 2 ) and pivotable about a vertical axis.
- the transfer arm A 1 is configured to take out the substrate W from the carrier 7 and hand it over to the shelf unit 6 , and also configured to receive the substrate W from the shelf unit 6 and return it back into the carrier 7 .
- the shelf unit 6 is located near the processing station 3 , and is configured to mediate the delivery of the substrate W between the carry-in/out section 5 and the processing station 3 .
- the processing station 3 includes a transfer section 8 , a plurality of liquid processing units 100 and an exhaust unit 200 .
- the transfer section 8 extends horizontally in the direction (left-and-right direction in FIG. 1 ) in which the carry-in/out station 2 and the processing station 3 are arranged.
- the transfer section 8 incorporates a transfer arm A 2 therein.
- the transfer arm A 2 is configured to be movable horizontally in a longitudinal direction (left-and-right direction in FIG. 1 ) of the transfer section 8 , movable up and down in the vertical direction and pivotable about a vertical axis.
- the transfer arm A 2 is configured to take out the substrate W from the shelf unit 6 and hand it over to a liquid processing unit 100 , and also configured to receive the substrate W from the liquid processing unit 100 and return it back into the shelf unit 6 .
- the liquid processing unit 100 is configured to perform a predetermined liquid processing (e.g., a processing of removing contaminants or foreign matters, an etching processing, etc.) onto the substrate W.
- the liquid processing unit 100 may be configured as a single-type cleaning device to clean substrates W one by one through, for example, spin cleaning.
- the liquid processing unit 100 includes a chamber 110 , an air blower 120 , a rotary holder 130 , a supply 140 and a cup body 150 .
- the chamber 110 is a housing configured to allow the substrate W to be carried in and out.
- a non-illustrated carry-in/out port is formed at a side wall of the chamber 110 .
- the substrate W is carried into the chamber 110 and carried out of the chamber 110 by the transfer arm A 2 through the carry-in/out port.
- the air blower 120 is provided at a ceiling wall of the chamber 110 .
- the air blower 120 is configured to form a downflow in the chamber 110 based on a signal from the controller Ctr.
- the rotary holder 130 includes a driving unit 131 , a shaft 132 and a holder 133 .
- the driving unit 131 is configured to rotate the shaft 132 based on an operation signal from the controller Ctr.
- the driving unit 131 may be a power source such as an electric motor.
- the holder 133 is provided at a tip end portion of the shaft 132 .
- the holder 133 is configured to attract and hold a rear surface of the substrate W by, for example, adsorption. That is, the rotary holder 130 may be configured to rotate the substrate W around a central axis (rotation axis) perpendicular to a front surface of the substrate W in an approximately horizontal state.
- the supply 140 is configured to supply a plurality of processing liquids of different types from a nozzle N to the front surface of the substrate W.
- the supply 140 includes liquid sources 141 to 144 , valves 145 to 148 and pipes D 1 to D 5 , as shown in FIG. 4 .
- the liquid source 141 may be configured as a source of a processing liquid L 1 (a second processing liquid or a third processing liquid).
- the processing liquid L 1 may be, for example, an acid-based processing liquid.
- the acid-based processing liquid may include, for example, an SC-2 solution (a mixed solution of hydrochloric acid, hydrogen peroxide and pure water), SPM (a mixed solution of sulfuric acid and a hydrogen peroxide solution), an HF (hydrofluoric acid) solution, a DHF (diluted hydrofluoric acid) solution, an HNO 3 +HF solution (a mixed solution of nitric acid and hydrofluoric acid) and the like.
- the liquid source 141 is connected to the nozzle N via the pipes D 1 and D 5 .
- the liquid source 142 may be configured as a source of a processing liquid L 2 (the second processing liquid or the third processing liquid).
- the processing liquid L 2 may be, for example, an alkali-based processing liquid.
- the alkali-based processing liquid may include, for example, an SC-1 solution (a mixed solution of ammonia, hydrogen peroxide and deionized water), a hydrogen peroxide solution and the like.
- the liquid source 142 is connected to the nozzle N via the pipes D 2 and D 5 .
- the liquid source 143 may be configured as a source of a processing liquid L 3 (a first processing liquid).
- the processing liquid L 3 may be, for example, an organic-based processing liquid.
- the organic-based processing liquid may include, for example, isopropyl alcohol (IPA) and the like.
- the liquid source 143 is connected to the nozzle N via the pipes D 3 and D 5 .
- the liquid source 144 may be configured as a source of a processing liquid L 4 .
- the processing liquid L 4 may be, for example, a rinse.
- the rinse may include, for example, deionized water (DIW), ozone water, carbonated water (CO 2 water), ammonia water and the like.
- DIW deionized water
- CO 2 water carbonated water
- ammonia water ammonia water and the like.
- the liquid source 144 is connected to the nozzle N via the pipes D 4 and D 5 .
- the valves 145 to 148 are provided in the pipes D 1 to D 4 , respectively. Each of the valves 145 to 148 is configured to be opened or closed based on an operation signal from the controller Ctr.
- the nozzle N with a discharge opening directed to the surface of the substrate W may be placed above the substrate W.
- the nozzle N may be configured to be movable in the horizontal direction or vertical direction above the substrate W by a non-illustrated driving source.
- the cup body 150 is provided to surround the holder 133 .
- the cup body 150 is configured to collect the processing liquid scattered from an outer periphery of the substrate W when the substrate W is held and rotated by the rotary holder 130 .
- a drain port 151 and an exhaust port 152 are provided at the bottom of the cup body 150 .
- the drain port 151 is configured to drain the processing liquids L 1 to L 4 collected by the cup body 150 to the outside of the liquid processing unit 100 .
- the exhaust port 152 is configured to exhaust the downflow formed around the substrate W by the air blower 12 to the outside of the liquid processing unit 100 .
- the exhaust port 152 exhausts, as an exhausts gas, a gas generated around the substrate W when the processing liquids L 1 to L 4 are supplied to the substrate W and the substrate W is processed with the processing liquids L 1 to L 4 in the liquid processing unit 100 .
- the exhaust gas includes an acid-based exhaust gas G 1 (a second exhaust gas or a third exhaust gas) exhausted from the exhaust port 152 of the liquid processing unit 100 when the substrate W is processed with the processing liquid L 1 , an alkali-based exhaust gas G 2 (the second exhaust gas or the third exhaust gas) exhausted from the exhaust port 152 of the liquid processing unit 100 when the substrate W is processed with the processing liquid L 2 , and an organic-based exhaust gas G 3 (a first exhaust gas) exhausted from the exhaust port 152 of the liquid processing unit 100 when the substrate W is processed with the processing liquid L 3 .
- the exhaust gases G 1 to G 3 exhausted from the exhaust port 152 of the liquid processing unit 100 may contain mist of the processing liquids L 1 to L 3 , respectively.
- the exhaust unit 200 will be described with reference to FIG. 2 , FIG. 4 and FIG. 5 .
- Main components of the exhaust unit 200 are placed above the carry-in/out station 2 and the processing station 3 as shown in FIG. 2 .
- the exhaust unit 200 includes individual exhaust pipes 210 , 220 and 230 , a plurality of main exhaust pipes 240 and a plurality of switching units 300 as shown in FIG. 2 , FIG. 4 and FIG. 5 .
- the individual exhaust pipes 210 , 220 and 230 are placed above the carry-in/out station 2 and the processing station 3 as shown in FIG. 2 and FIG. 4 .
- the individual exhaust pipe 210 is configured as an exhaust path that guides the exhaust gas G 3 to the outside of the substrate processing system 1 .
- the individual exhaust pipe 220 is configured as an exhaust path that guides the exhaust gas G 2 to the outside of the substrate processing system 1 .
- the individual exhaust pipe 230 is configured as an exhaust path that guides the exhaust gas G 1 to the outside of the substrate processing system 1 .
- the individual exhaust pipes 210 , 220 and 230 are provided with pumps P 1 to P 3 , respectively. That is, the exhaust gases G 1 to G 3 are sent through the respective individual exhaust pipes 210 , 220 and 230 to be exhausted to the outside of the substrate processing system 1 .
- the plurality of main exhaust pipes 240 respectively corresponds to the plurality of liquid processing units 100 provided in the processing station 3 .
- the plurality of switching units 300 respectively corresponds to the plurality of liquid processing units 100 provided in the processing station 3 . That is, one of the plurality of main exhaust pipes 240 is configured to allow the exhaust gas exhausted from one of the plurality of liquid processing units 100 to flow into one of the plurality of switching units 300 . All the main exhaust pipes 240 are identical to each other in configuration, and all the switching units 300 are identical to each other in configuration. For this reason, a main exhaust pipe 240 and a switching unit 300 corresponding to a single liquid processing unit 100 will be described, and description of the other main exhaust pipes 240 and the other switching units 300 will be omitted.
- the main exhaust pipe 240 extends between the liquid processing unit 100 and the switching unit 300 in the vertical direction as shown in FIG. 2 and FIG. 4 . That is, an upstream end portion (lower end portion) of the main exhaust pipe 240 is connected to the exhaust port 152 , and a downstream end portion (upper end portion) of the main exhaust pipe 240 reaches the switching unit 300 .
- the upstream end portion (lower end portion) of the main exhaust pipe 240 is connected to a non-illustrated drain unit.
- the exhaust gases G 1 to G 3 may contain mist. Since mist is heavier than a gas, the exhaust gases G 1 to G 3 may flow upwards within the main exhaust pipe 240 , but it is difficult for the mist to flow upwards within the main exhaust pipe 240 .
- the mist is cooled to be liquefied into droplets while the exhaust gases G 1 to G 3 flow upwards within the main exhaust pipe 240 , and the droplets fall down within the main exhaust pipe 240 .
- the droplets derived from the mist are drained from the drain unit to the outside of the substrate processing system 1 . That is, gas-liquid separation is performed in the main exhaust pipe 240 .
- the downstream end portion of the main exhaust pipe 240 includes a first portion 241 , a second portion 242 and a third portion 243 as shown in FIG. 5 .
- the first portion 241 , the second portion 242 and the third portion 243 are arranged in series in this order from the upstream side to the downstream side.
- the switching unit 300 is placed above the carry-in/out station 2 and the processing station 3 as shown in FIG. 2 and FIG. 4 . That is, the switching unit 300 is placed above the liquid processing unit 100 .
- the switching unit 300 is configured to allow the main exhaust pipe 240 to selectively communicate with any one of the individual exhaust pipes 210 , 220 and 230 .
- the switching unit 300 includes valves V 1 to V 5 , inlet pipes 311 to 313 , outlet pipes 321 to 323 , outside air introduction pipes 330 to 333 , an outside air introduction pipe 340 , a regulator 350 and sensors SE 1 and SE 2 as shown in FIG. 5 .
- the valve V 1 (first switching mechanism) includes inlet ports V 1 a and V 1 b and an outlet port V 1 c .
- the valve V 1 is configured to operate based on an operation signal from the controller Ctr.
- the valve V 1 is placed between the first portion 241 of the main exhaust pipe 240 and the individual exhaust pipe 210 .
- the valve V 1 can switch between a state where the inlet port V 1 a communicates with the outlet port V 1 c , but the inlet port V 1 b does not communicate with the outlet port V 1 c (see FIG. 5 ) and a state where the inlet port V 1 b communicates with the outlet port V 1 c , but the inlet port V 1 a does not communicate with the outlet port V 1 c (see FIG. 8 and FIG. 9 ).
- the valve V 2 (second switching mechanism) includes inlet ports V 2 a and V 2 b and an outlet port V 2 c .
- the valve V 2 is configured to operate based on an operation signal from the controller Ctr.
- the valve V 2 is placed between the second portion 242 of the main exhaust pipe 240 and the individual exhaust pipe 220 .
- the valve V 2 can switch between a state where the inlet port V 2 a communicates with the outlet port V 2 c , but the inlet port V 2 b does not communicate with the outlet port V 2 c (see FIG. 8 ) and a state where the inlet port V 2 b communicates with the outlet port V 2 c , but the inlet port V 2 a does not communicate with the outlet port V 2 c (see FIG. 5 and FIG. 9 ).
- the valve V 3 (fifth switching mechanism) includes inlet ports V 3 a and V 3 b and an outlet port V 3 c .
- the valve V 3 is configured to operate based on an operation signal from the controller Ctr.
- the valve V 3 is placed between the third portion 243 of the main exhaust pipe 240 and the individual exhaust pipe 230 .
- the valve V 3 can switch between a state where the inlet port V 3 a communicates with the outlet port V 3 c , but the inlet port V 3 b does not communicate with the outlet port V 3 c (see FIG. 9 ) and a state where the inlet port V 3 b communicates with the outlet port V 3 c , but the inlet port V 3 a does not communicate with the outlet port V 3 c (see FIG. 5 and FIG. 8 ).
- the valve V 4 (third switching mechanism) is configured to be opened or closed based on an operation signal from the controller Ctr.
- the valve V 4 can switch between an open state where the flow of the exhaust gas is allowed and a closed state where the flow of the exhaust gas is blocked.
- the valve V 4 is placed between the first portion 241 and the second portion 242 of the main exhaust pipe 240 .
- the second portion 242 and the third portion 243 of the main exhaust pipe 240 are located on the downstream side of the valve V 4 .
- the valve V 5 (fourth switching mechanism) is configured to be opened or closed based on an operation signal from the controller Ctr.
- the valve V 5 can switch between an open state where the flow of outside air is allowed and a closed state where the flow of outside air is blocked.
- the valve V 5 is placed in the outside air introduction pipe 340 .
- the inlet pipe 311 is extended to connect the first portion 241 of the main exhaust pipe 240 to the inlet port V 1 a of the valve V 1 .
- the inlet pipe 312 is extended to connect the second portion 242 of the main exhaust pipe 240 to the inlet port V 2 a of the valve V 2 .
- the inlet pipe 313 is extended to connect the third portion 243 of the main exhaust pipe 240 to the inlet port V 3 a of the valve V 3 .
- the outlet pipe 321 is extended to connect the individual exhaust pipe 210 to the outlet port V 1 c of the valve V 1 .
- the outlet pipe 322 is extended to connect the individual exhaust pipe 220 to the outlet port V 2 c of the valve V 2 .
- the outlet pipe 323 is extended to connect the individual exhaust pipe 230 to the outlet port V 3 c of the valve V 3 .
- the outside air introduction pipes 330 to 333 are configured to supply the outside air to the individual exhaust pipes 210 , 220 and 230 , respectively.
- the outside air introduction pipe 330 includes an upper end portion in fluid connection with the outside air.
- the outside air introduction pipe 331 is extended to connect the outside air introduction pipe 330 to the inlet port V 1 b of the valve V 1 .
- the outside air introduction pipe 332 is extended to connect the outside air introduction pipe 330 to the inlet port V 2 b of the valve V 2 .
- the outside air introduction pipe 333 is extended to connect the outside air introduction pipe 330 to the inlet port V 3 b of the valve V 3 .
- the outside air introduction pipe 340 is configured to supply the outside air to the second portion 242 of the main exhaust pipe 240 .
- the outside air introduction pipe 340 is extended to connect an upper end portion thereof in fluid connection with the outside air to the second portion 242 of the main exhaust pipe 240 .
- the regulator 350 is provided on the upstream side of the valve V 5 in the outside air introduction pipe 340 .
- the regulator 350 is configured to operate based on an operation signal from the controller Ctr.
- the regulator 350 is configured to regulate a flow rate of the outside air flowing in the outside air introduction pipe 340 to regulate a pressure in the second portion 242 of the main exhaust pipe 240 communicating with the outside air introduction pipe 340 by, for example, changing an opening area of the outside air introduction pipe 340 .
- the sensor SE 1 (first sensor) is configured to measure a pressure in the first portion 241 of the main exhaust pipe 240 .
- the sensor SE 1 is configured to transmit data of the measured pressure to the controller Ctr.
- the sensor SE 2 (second sensor) is configured to measure a pressure in the second portion 242 of the main exhaust pipe 240 .
- the sensor SE 2 is configured to transmit data of the measured pressure to the controller Ctr.
- the controller Ctr is configured to partially or entirely control the substrate processing system 1 .
- the controller Ctr includes, as functional modules, a reading unit M 1 , a storage unit M 2 , a processor M 3 and an instruction unit M 4 as illustrated in FIG. 6 .
- the controller Ctr has been described to be divided into these functional modules according to respective functions for the convenience in description, it does not necessarily mean that the hardware constituting the controller Ctr is divided into these modules.
- Each functional module is not limited to being implemented by execution of a program, but may be implemented by a dedicated electric circuit (e.g., a logic circuit) or an application specific integrated circuit (ASIC) into which the functional modules are integrated.
- a dedicated electric circuit e.g., a logic circuit
- ASIC application specific integrated circuit
- the reading unit M 1 is configured to read a program from a computer-readable recording medium RM.
- the recording medium RM stores therein a program for operating each component of the substrate processing system 1 .
- the recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.
- each component of the substrate processing system 1 may include the air blower 120 , the rotary holder 130 , the supply 140 , the valves V 1 to V 5 , pumps P 1 to P 3 and the regulator 350 .
- the storage unit M 2 is configured to store various kinds of data therein.
- the storage unit M 2 may store therein, for example, the program read out from the recording medium RM in the reading unit M 1 , setting data inputted by an operator through an external input device (not shown), and the like. Further, the storage unit M 2 may store therein processing conditions (processing recipes) for processing the substrate W. Furthermore, the storage unit M 2 may store therein, for example, the pressure data obtained by the sensors SE 1 and SE 2 .
- the processor M 3 is configured to process various kinds of data.
- the processor M 3 may generate, for example, a signal for operating each component of the substrate processing system 1 based on various kinds of data stored in the storage unit M 2 .
- the processor M 3 may calculate, for example, an opening area of the outside air introduction pipe 340 at which the second portion 242 has a higher pressure than the first portion 241 based on the pressure data obtained by the sensors SE 1 and SE 2 .
- the processor M 3 may generate a signal for operating the regulator 350 based on the calculated opening area.
- the instruction unit M 4 is configured to transmit the operation signal generated by the processor M 3 to each component of the substrate processing system 1 .
- the hardware of the controller Ctr may be composed of, for example, one or more control computers.
- the controller Ctr may include a circuit C 1 as a hardware component as illustrated in FIG. 7 .
- the circuit C 1 may be composed of electronic circuit elements (circuitry).
- the circuit C 1 may include a processor C 2 , a memory C 3 , a storage C 4 , a driver C 5 and an input/output port C 6 .
- the processor C 2 may be configured to implement each of the above-described functional modules by executing a program in cooperation with at least one of the memory C 3 and the storage C 4 and performing an input/output of a signal through the input/output port C 6 .
- the memory C 3 and the storage C 4 may function as the storage unit M 2 .
- the driver C 5 may be a circuit configured to drive the components of the substrate processing system 1 individually.
- the input/output port C 6 may be configured to mediate an input/output of a signal between the driver C 5 and each component of the substrate processing system 1 .
- the substrate processing system 1 may be equipped with one controller Ctr, or may be equipped with a controller group (a control unit) including a plurality of controllers Ctr.
- each of the above-described functional modules may be implemented by one controller Ctr, or may be implemented by a combination of two or more controllers Ctr.
- the controller Ctr is composed of a plurality of computers (circuits C 1 )
- each of the above-described functional modules may be implemented by one computer (circuit C 1 ), or may be implemented by a combination of two or more computers (circuits C 1 ).
- the controller Ctr may include a plurality of processors C 2 . In this case, each of the above-described functional modules may be implemented by one processor C 2 , or may be implemented by a combination of two or more processors C 2 .
- valves V 1 to V 5 are in respective states as described below.
- Valve V 1 State where the inlet port V 1 b communicates with the outlet port V 1 c (state where the first portion 241 does not communicate with the individual exhaust pipe 210 )
- Valve V 2 State where the inlet port V 2 a communicates with the outlet port V 2 c (state where the second portion 242 communicates with the individual exhaust pipe 220 )
- Valve V 3 State where the inlet port V 3 b communicates with the outlet port V 3 c (state where the third portion 243 does not communicate with the individual exhaust pipe 230 )
- Valve V 4 Open state
- the controller Ctr controls the transfer arms A 1 and A 2 to transfer the substrate W from the carrier 7 to the liquid processing unit 100 (see FIG. 1 and FIG. 2 ). Then, the substrate W is held by the rotary holder 130 of the liquid processing unit 100 (see FIG. 3 ). Thereafter, the controller Ctr controls the rotary holder 130 to rotate the substrate W at a predetermined rotation number. In this state, the controller Ctr controls the supply 140 to supply, for example, the alkali-based processing liquid L 2 from the nozzle N onto the central portion of the front surface of the substrate W (see FIG. 4 ).
- the processing liquid L 2 supplied onto the front surface of the substrate W flows throughout the surface of the substrate W from the central portion toward the outer periphery of the substrate W and then is scattered from the outer periphery to the outside. For this reason, while the processing liquid L 2 is supplied from the nozzle N, a liquid film of the processing liquid L 2 is formed on the front surface of the substrate W. Accordingly, the front surface of the substrate W is processed with the processing liquid L 2 .
- the processing liquid L 2 scattered from the outer periphery of the substrate W to the outside is collected in the cup body 150 .
- a gas generated when the substrate W is processed with the processing liquid L 2 is exhausted from the exhaust port 152 of the liquid processing unit 100 .
- the alkali-based exhaust gas G 2 exhausted from the liquid processing unit 100 is introduced into the switching unit 300 through the main exhaust pipe 240 (see FIG. 4 ).
- the exhaust gas G 2 introduced into the switching unit 300 flows through the first portion 241 and the second portion 242 of the main exhaust pipe 240 , the inlet pipe 312 , the valve V 2 and the outlet pipe 322 and then is exhausted from the individual exhaust pipe 220 to the outside of the substrate processing system 1 (see FIG. 8 ).
- the outside air introduced from the outside air introduction pipe 330 flows through the outside air introduction pipe 331 , the valve V 1 and the outlet pipe 321 and then is exhausted from the individual exhaust pipe 210 to the outside of the substrate processing system 1 (see FIG. 8 ).
- the outside air introduced from the outside air introduction pipe 330 flows through the outside air introduction pipe 333 , the valve V 3 and the outlet pipe 323 and then is exhausted from the individual exhaust pipe 230 to the outside of the substrate processing system 1 (see FIG. 8 ). Since the valve V 5 is in the closed state, the outside air is not introduced into the second portion 242 of the main exhaust pipe 240 from the outside air introduction pipe 340 .
- the controller Ctr controls the supply 140 to supply the processing liquid L 4 (rinse) from the nozzle N onto the central portion of the front surface of the substrate W (see FIG. 4 ). Accordingly, the processing liquid L 2 remaining on the front surface of the substrate W is washed off by the processing liquid L 4 .
- controller Ctr controls the switching unit 300 to switch the valves V 1 to V 5 to respective states as described below (see FIG. 9 ).
- Valve V 1 State where the inlet port V 1 b communicates with the outlet port V 1 c (state where the first portion 241 does not communicate with the individual exhaust pipe 210 )
- Valve V 2 State where the inlet port V 2 b communicates with the outlet port V 2 c (state where the second portion 242 does not communicate with the individual exhaust pipe 220 )
- Valve V 3 State where the inlet port V 3 a communicates with the outlet port V 3 c (state where the third portion 243 communicates with the individual exhaust pipe 230 )
- Valve V 4 Open state
- the controller Ctr controls the supply 140 to supply, for example, the acid-based processing liquid L 1 from the nozzle N onto the central portion of the surface of the substrate W (see FIG. 4 ).
- the processing liquid L 1 supplied onto the front surface of the substrate W flows throughout the front surface of the substrate W from the central portion toward the outer periphery of the substrate W and then is scattered from the outer periphery to the outside. For this reason, while the processing liquid L 1 is supplied from the nozzle N, a liquid film of the processing liquid L 1 is formed on the front surface of the substrate W. Accordingly, the front surface of the substrate W is processed with the processing liquid L 1 .
- the processing liquid L 1 scattered from the outer periphery of the substrate W to the outside is collected in the cup body 150 .
- a gas generated when the substrate W is processed with the processing liquid L 1 is exhausted from the exhaust port 152 of the liquid processing unit 100 .
- the acid-based exhaust gas G 1 exhausted from the liquid processing unit 100 is introduced into the switching unit 300 through the main exhaust pipe 240 (see FIG. 4 ).
- the exhaust gas G 1 introduced into the switching unit 300 flows through the first portion 241 , the second portion 242 and the third portion 243 of the main exhaust pipe 240 , the inlet pipe 313 , the valve V 3 and the outlet pipe 323 and then is exhausted from the individual exhaust pipe 230 to the outside of the substrate processing system 1 (see FIG. 9 ).
- the outside air introduced from the outside air introduction pipe 330 flows through the outside air introduction pipe 331 , the valve V 1 and the outlet pipe 321 and then is exhausted from the individual exhaust pipe 210 to the outside of the substrate processing system 1 (see FIG. 9 ).
- the outside air introduced from the outside air introduction pipe 330 flows through the outside air introduction pipe 332 , the valve V 2 and the outlet pipe 322 and then is exhausted from the individual exhaust pipe 220 to the outside of the substrate processing system 1 (see FIG. 9 ). Since the valve V 5 is in the closed state, the outside air is not introduced into the second portion 242 of the main exhaust pipe 240 from the outside air introduction pipe 340 .
- the controller Ctr controls the supply 140 to supply the processing liquid L 4 (rinse) from the nozzle N onto the central portion of the front surface of the substrate W (see FIG. 4 ). Accordingly, the processing liquid L 1 remaining on the front surface of the substrate W is washed off by the processing liquid L 4 .
- controller Ctr controls the switching unit 300 to switch the valves V 1 to V 5 to respective states as described below (see FIG. 5 ).
- Valve V 1 State where the inlet port V 1 a communicates with the outlet port V 1 c (state where the first portion 241 communicates with the individual exhaust pipe 210 )
- Valve V 2 State where the inlet port V 2 b communicates with the outlet port V 2 c (state where the second portion 242 does not communicate with the individual exhaust pipe 220 )
- Valve V 3 State where the inlet port V 3 b communicates with the outlet port V 3 c (state where the third portion 243 does not communicate with the individual exhaust pipe 230 )
- Valve V 5 Open state
- the controller Ctr controls the supply 140 to supply, for example, the organic-based processing liquid L 3 from the nozzle N onto the central portion of the front surface of the substrate W (see FIG. 4 ).
- the processing liquid L 3 supplied onto the front surface of the substrate W flows throughout the front surface of the substrate W from the central portion toward the outer periphery of the substrate W and then is scattered from the outer periphery to the outside. For this reason, while the processing liquid L 3 is supplied from the nozzle N, a liquid film of the processing liquid L 3 is formed on the front surface of the substrate W. Accordingly, the front surface of the substrate W is processed with the processing liquid L 3 .
- the processing liquid L 3 scattered from the outer periphery of the substrate W to the outside is collected in the cup body 150 .
- a gas generated when the substrate W is processed with the processing liquid L 3 is exhausted from the exhaust port 152 of the liquid processing unit 100 .
- the organic-based exhaust gas G 3 exhausted from the liquid processing unit 100 is introduced into the switching unit 300 through the main exhaust pipe 240 (see FIG. 4 ).
- the exhaust gas G 3 introduced into the switching unit 300 flows through the first portion 241 of the main exhaust pipe 240 , the inlet pipe 311 , the valve V 1 and the outlet pipe 321 and then is exhausted from the individual exhaust pipe 210 to the outside of the substrate processing system 1 (see FIG. 5 ).
- the outside air introduced from the outside air introduction pipe 330 flows through the outside air introduction pipe 332 , the valve V 2 and the outlet pipe 322 and then is exhausted from the individual exhaust pipe 220 to the outside of the substrate processing system 1 (see FIG. 5 ).
- the outside air introduced from the outside air introduction pipe 330 flows through the outside air introduction pipe 333 , the valve V 3 and the outlet pipe 323 and then is exhausted from the individual exhaust pipe 230 to the outside of the substrate processing system 1 (see FIG. 5 ).
- a pressure in the second portion 242 may be higher than a pressure in the first portion 241 .
- the controller Ctr may control the regulator 350 to change the opening area of the outside air introduction pipe 340 such that the pressure in the second portion 242 is higher than the pressure in the first portion 241 .
- the controller Ctr controls the rotary holder 130 to rotate the substrate W at a predetermined rotation number. Accordingly, the front surface of the substrate W is dried. Thereafter, the controller Ctr controls the transfer arms A 1 and A 2 to transfer the dried substrate W from the liquid processing unit 100 to the carrier 7 (see FIG. 1 and FIG. 2 ). Thus, the processing of the substrate W is completed.
- the valve V 4 is placed between the first portion 241 and the second portion 242 of the main exhaust pipe 240 . Therefore, when the exhaust gas G 3 is exhausted from the liquid processing unit 100 , by allowing the valve V 4 to be in the closed state, it is difficult for the exhaust gas G 3 to flow toward the second portion 242 located on the downstream side of the valve V 4 . Also, according to the above-described exemplary embodiment, when the exhaust gas G 3 is exhausted from the liquid processing unit 100 , the outside air is introduced into the second portion 242 from the outside air introduction pipe 340 via the valve V 5 .
- the organic-based exhaust gas G 3 it is difficult for the organic-based exhaust gas G 3 to be introduced into the individual exhaust pipes 220 and 230 . For this reason, it is possible to suppress the volatile organic compound from being mixed into the acid-based exhaust gas or alkali-based exhaust gas. For this reason, it is possible to suppress air pollution caused by the gases exhausted through the individual exhaust pipes 220 and 230 .
- the pressure in the second portion 242 may be set to be higher than the pressure in the first portion 241 .
- the exhaust gas G 3 hardly flows toward the second portion 242 through the gap. For this reason, it is very difficult for the exhaust gas G 3 to reach the individual exhaust pipes 220 and 230 .
- the regulator 350 may regulate the amount of outside air introduced into the second portion 242 such that the pressure in the second portion 242 is higher than the pressure in the first portion 241 based on the pressures measured by the sensors SE 1 and SE 2 .
- the pressures in the second portion 242 and the third portion 243 are regulated by the regulator 350 such that the pressure in the second portion 242 is higher than the pressure in the first portion 241 . For this reason, it is possible to suppress the introduction of the exhaust gas G 3 into the second portion 242 regardless of the pressure change in the first portion 241 .
- the switching unit 300 is placed above the liquid processing unit 100 . For this reason, if the gas exhausted from the liquid processing unit 100 contains the mist, the exhaust gas reaches the switching unit 300 after the mist is separated from the gas. Therefore, it is possible to suppress the attachment of contaminants or foreign matters caused by the mist to the switching unit 300 .
- the exhaust unit 200 may not include the individual exhaust pipe 230 as shown in FIG. 10 . Accordingly, the switching unit 300 may not include the third portion 243 , the inlet pipe 313 , the outside air introduction pipe 333 , the outlet pipe 323 and the valve V 3 . If there are four or more types of processing liquids for processing the substrate W, the exhaust unit 200 may include the individual exhaust pipe and its attendant members, which are not illustrated in the drawings, depending on the number of types of processing liquids.
- the switching unit 300 may further include a valve V 6 (sixth switching mechanism) provided in the inlet pipe 311 .
- the valve V 6 is configured to be opened or closed based on an operation signal from the controller Ctr.
- the valve V 6 can switch between an open state where the flow of the exhaust gas is allowed and a closed state where the flow of the exhaust gas is blocked.
- the valve V 6 since the valve V 6 is placed between the first portion 241 and the valve V 1 , the valve V 6 is allowed to be in the closed state when the exhaust gases G 1 and G 2 are exhausted from the liquid processing unit 100 .
- the switching unit 300 may further include a valve V 7 provided in the third portion 243 .
- the valve V 7 is configured to be opened or closed based on an operation signal from the controller Ctr.
- the valve V 7 can switch between an open state where the flow of the exhaust gas is allowed and a closed state where the flow of the exhaust gas is blocked. In this case, the valve V 7 is allowed to be in the closed state when the exhaust gas G 3 is exhausted from the liquid processing unit 100 . Thus, it is more difficult for the exhaust gas G 3 to reach the individual exhaust pipe 230 .
- the switching unit 300 may further include an outside air introduction pipe 360 connected to the third portion 243 and a valve V 8 provided in the outside air introduction pipe 360 .
- the outside air introduction pipe 360 is configured to supply the outside air into the third portion 243 .
- the valve V 8 is configured to be opened or closed based on an operation signal from the controller Ctr.
- the valve V 8 can switch between an open state where the flow of the outside air is allowed and a closed state where the flow of the outside air is blocked. In this case, the valve V 8 is allowed to be in the open state when the exhaust gas G 3 is exhausted from the liquid processing unit 100 .
- the flow of the exhaust gas G 3 in the third portion 243 is suppressed by the outside air introduced from the outside air introduction pipe 360 .
- the switching unit 300 may further include a regulator 370 provided on the upstream side of the valve V 8 in the outside air introduction pipe 360 .
- the regulator 370 is configured to operate based on an operation signal from the controller Ctr like the regulator 350 .
- the regulator 370 is configured to regulate a flow rate of the outside air flowing in the outside air introduction pipe 360 and regulate a pressure in the third portion 243 of the main exhaust pipe 240 communicating with the outside air introduction pipe 360 by, for example, changing an opening area of the outside air introduction pipe 360 .
- an opening area of the outside air introduction pipe 360 may be regulated by the regulator 370 such that the pressure in the third portion 243 to be higher than the pressure in the first portion 241 .
- the switching unit 300 may further include a sensor configured to measure the pressure in the third portion 243 of the main exhaust pipe 240 . Based on the pressures measured by the sensor and the sensor SE 1 , the controller Ctr may control the regulator 370 to change the opening area of the outside air introduction pipe 360 such that the pressure in the third portion 243 to be higher than the pressure in the first portion 241 .
- the opening area may not be further regulated by the regulator 350 . Otherwise, based on the pressures measured by the sensors SE 1 and SE 2 , the regulator 350 may regulate the opening area of the outside air introduction pipe 340 continuously or at a predetermined time interval.
- a substrate processing apparatus includes a liquid processing unit configured to supply, onto a front surface of a substrate, individual multiple processing liquids including a first processing liquid and a second processing liquid different from the first processing liquid; and an exhaust unit configured to exhaust an exhaust gas exhausted from the liquid processing unit to an outside, the exhaust gas including a first exhaust gas exhausted from the liquid processing unit when the substrate is processed with the first processing liquid and a second exhaust gas exhausted from the liquid processing unit when the substrate is processed with the second processing liquid.
- the exhaust unit includes a main exhaust pipe configured to allow the exhaust gas to flow therein, the main exhaust pipe including a first portion located on an upstream side and a second portion located on a downstream side of the first portion; a first individual exhaust pipe configured to allow the first exhaust gas to flow therein; a second individual exhaust pipe configured to allow the second exhaust gas to flow therein; and a switching unit configured to selectively communicate the main exhaust pipe with one of the first individual exhaust pipe and the second individual exhaust pipe.
- the switching unit includes a first switching mechanism provided between the first portion and the first individual exhaust pipe and configured to switch between a communication state where the first portion communicates with the first individual exhaust pipe when the first exhaust gas is exhausted from the liquid processing unit and a non-communication state where the first portion does not communicate with the first individual exhaust pipe when the exhaust gas other than the first exhaust gas is exhausted from the liquid processing unit; a second switching mechanism provided between the second portion and the second individual exhaust pipe and configured to switch between a communication state where the second portion communicates with the second individual exhaust pipe when the second exhaust gas is exhausted from the liquid processing unit and a non-communication state where the second portion does not communicate with the second individual exhaust pipe when the exhaust gas other than the second exhaust gas is exhausted from the liquid processing unit; a third switching mechanism provided between the first portion and the second portion of the main exhaust pipe and configured to switch between a closed state where a flow of the first exhaust gas to the second portion is blocked when the first exhaust gas is exhausted from the liquid processing unit and an open state where a flow of the exhaust gas other than the first exhaust gas to the second
- the third switching mechanism is placed between the first portion and the second portion of the main exhaust pipe. Therefore, the third switching mechanism is in the closed state when the first exhaust gas is exhausted from the liquid processing unit. Thus, it is difficult for the first exhaust gas to flow toward the second portion provided on the downstream side of the third switching mechanism. Also, in the example 1, when the first exhaust gas is exhausted from the liquid processing unit, the outside air is introduced into the second portion from the outside air introduction pipe via the fourth switching mechanism. For this reason, even if there is the slight gap in the third switching mechanism due to the structure of the third switching mechanism (e.g., dimensional accuracy), the flow of the first exhaust gas in the second portion through the gap is suppressed by the outside air introduced into the second portion.
- the multiple processing liquids may further include a third processing liquid different from the first processing liquid and the second processing liquid
- the exhaust gas may further include a third exhaust gas exhausted from the liquid processing unit when the substrate is processed with the third processing liquid
- the exhaust unit may further include a third individual exhaust pipe configured to allow the third exhaust gas to flow therein
- the main exhaust pipe may further include a third portion located on a downstream side of the third switching mechanism
- the switching unit may further include a fifth switching mechanism, which is provided between the third portion and the third individual exhaust pipe and configured to switch between a communication state where the third portion communicates with the third individual exhaust pipe when the third exhaust gas is exhausted from the liquid processing unit and a non-communication state where the third portion does not communicate with the third individual exhaust pipe when the exhaust gas other than the third exhaust gas is exhausted from the liquid processing unit
- the switching unit is configured to selectively communicate the main exhaust pipe with any one of the first individual exhaust pipe, the second individual exhaust pipe and the third individual exhaust pipe.
- the first processing liquid may be an organic-based processing liquid
- the second processing liquid may be an acid-based processing liquid or an alkali-based processing liquid.
- the volatile organic compound it is possible to suppress the volatile organic compound from being mixed into the acid-based exhaust gas or the alkali-based exhaust gas. For this reason, it is possible to suppress air pollution caused by the gas exhausted through the second individual exhaust pipe.
- Example 4 In the substrate processing apparatus of any one of the examples 1 to 3, when the first exhaust gas is exhausted from the liquid processing unit, a pressure in the second portion may be set to be higher than a pressure in the first portion by allowing the third switching mechanism to be in the closed state and the fourth switching mechanism to be in the open state. In this case, even if there is the slight gap in the third switching mechanism, the first exhaust gas hardly flows toward the second portion through the gap. For this reason, it is very difficult for the first exhaust gas to reach the second individual exhaust pipe.
- the switching unit may further include a first sensor configured to measure a pressure in the first portion; a second sensor configured to measure a pressure in the second portion; and a regulator provided on an upstream side of the fourth switching mechanism in the outside air introduction pipe.
- the regulator may be configured to regulate an amount of the outside air introduced into the second portion such that the pressure measured by the second sensor is higher than the pressure measured by the first sensor. In this case, the same effect as obtained in the substrate processing apparatus of the example 4 can be achieved.
- the pressure in the second portion is regulated by the regulator such that the pressure in the second portion is higher than the pressure in the first portion. For this reason, it is possible to suppress the introduction of the first exhaust gas into the second portion regardless of the pressure change in the first portion.
- Example 6 In the substrate processing apparatus of any one of the examples 1 to 5, the switching unit may be provided above the liquid processing unit.
- An exhaust gas may contain mist of the processing liquid. Since the mist is heavier than the gas, the exhaust gas may flow upwards, but it is difficult for the mist to flow upwards. That is, in the example 6, even if the exhaust gas immediately exhausted from the liquid processing unit contains the mist of the processing liquid, the mist is liquefied into droplets to fall down while the exhaust gas flows toward the switching unit. For this reason, the exhaust gas reaches the switching unit after the mist is separated from the gas. Therefore, it is possible to suppress the attachment of contaminants or foreign matters caused by the mist to the switching unit.
- the switching unit may further include a sixth switching mechanism provided between the first portion and the first switching mechanism and configured to switch between a communication state where the first portion communicates with the first switching mechanism when the first exhaust gas is exhausted from the liquid processing unit and a non-communication state where the first portion does not communicate with the first switching mechanism when the exhaust gas other than the first exhaust gas is exhausted from the liquid processing unit.
- the sixth switching mechanism since the sixth switching mechanism is placed between the first portion and the first switching mechanism, the sixth switching mechanism is in a closed state when the second exhaust gas is exhausted from the liquid processing unit.
- a substrate processing method of processing a substrate using the substrate processing apparatus of any one of the examples 1 to 7 includes: allowing the first switching mechanism to be in the communication state, the second switching mechanism to be in the non-communication state, the third switching mechanism to be in the closed state and the fourth switching mechanism to be in the open state; processing the substrate with the first processing liquid in the liquid processing unit after the allowing of the first switching mechanism to be in the communication state; allowing the first switching mechanism to be in the non-communication state, the second switching mechanism to be in the communication state, the third switching mechanism to be in the open state and the fourth switching mechanism to be in the closed state; and processing the substrate with the second processing liquid in the liquid processing unit after the allowing of the first switching mechanism to be in the non-communication state.
- the same effect as obtained in the substrate processing apparatus of the example 1 can be achieved.
- the substrate processing apparatus and the substrate processing method of the present disclosure when the substrate is processed in the liquid processing unit using the plurality of types of processing liquids, it is possible to suppress the introduction of the gas exhausted from the liquid processing unit into the individual exhaust pipe different from the individual exhaust pipe corresponding to the exhausted gas.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
- Patent Document 1: Japanese Patent Laid-open Publication No. 2016-092144
Claims (20)
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JP2021-137779 | 2021-08-26 | ||
JP2021137779A JP2023031968A (en) | 2021-08-26 | 2021-08-26 | Substrate processing device and substrate processing method |
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US11998954B2 true US11998954B2 (en) | 2024-06-04 |
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US17/822,184 Active US11998954B2 (en) | 2021-08-26 | 2022-08-25 | Substrate processing apparatus and substrate processing method |
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US (1) | US11998954B2 (en) |
JP (1) | JP2023031968A (en) |
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JP2016092144A (en) | 2014-10-31 | 2016-05-23 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, exhaust switching unit, and substrate liquid processing method |
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- 2021-08-26 JP JP2021137779A patent/JP2023031968A/en active Pending
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- 2022-07-27 CN CN202210889984.8A patent/CN115938976A/en active Pending
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JP2016092144A (en) | 2014-10-31 | 2016-05-23 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, exhaust switching unit, and substrate liquid processing method |
Non-Patent Citations (1)
Title |
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JP 2016092144A, Substrate Liquid Processing Apparatus, Exhaust Switching Unit, and Substrate Liquid Processing Method, Minamida (Year: 2016). * |
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KR20230031154A (en) | 2023-03-07 |
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