JP2001083080A - Crystal defect measuring device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and device for inspecting a semiconductor, that can measure and evaluate micro roughness, crystal defects, and surface foreign objects by separating influences given by each to the others in the method for measuring either of the micro roughness, crystal defects, and surface foreign objects near the crystal surface. SOLUTION: Time change of the scattered light intensity of scattered lights 10 and 26 from a sample wafer 1 which is generated by scanning the traveling sample wafer 1 with illumination beams 8 and 9 with two wavelengths 8 includes a haze (DC component) due to the micro roughness of a sample wafer and high-density internal defects and surface foreign objects existing in the sample, and pulse scatted light (AC component) generated by the crystal defects ad surface foreign objects. Therefore, by applying illumination beams having two wavelengths onto the crystal sample, the haze for each wavelength can be detected in two different detection directions, thus measuring the micro roughness of interfaces with different depths near the crystal surface and performing haze measurement, where the influences of the micro roughness, high-density internal defects, or surface foreign objects causing the haze to occur are separated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for measuring a crystal defect such as a precipitate or a stacking fault in a semiconductor wafer, particularly a silicon wafer, and a semiconductor inspection apparatus such as an apparatus for inspecting foreign matter on a wafer surface.

[0002]

2. Description of the Related Art As the degree of integration of LSIs (Large Scale Integrated Circuits) is improved, MOS (Metal
Oxide semiconductor (Oxide Semiconductor) transistors have a serious problem in that the yield of non-defective products and the decrease in reliability due to transistor failures have become serious problems. Typical causes of the failure of the MOS transistor are dielectric breakdown of the gate oxide film and excessive leakage current at the junction. Many of these MOS transistor defects are directly or indirectly caused by crystal defects in the silicon substrate. That is, in the LSI manufacturing process, if there is a crystal defect in the surface region of the silicon substrate that is converted to a silicon oxide film by oxidation, a structural defect is formed in the silicon oxide film, and dielectric breakdown occurs during LSI operation. Also, if a crystal defect exists in the depletion layer of the junction, a large amount of leak current is generated. As described above, if a crystal defect is formed in a surface region where an element is formed in a silicon substrate, a defect of a MOS transistor occurs, which is not preferable. From the viewpoint of countermeasures such as a gate breakdown voltage failure and a junction leak failure of a MOS device, a technique for measuring a crystal defect in a surface region where a device is formed is extremely important.
There is a technique described in “Applied Physics Vol. 65, No. 11 (1996), pp. 1162 to 1163”.

In the above-mentioned known example, the absorption coefficient of silicon is about 1
Irradiating the silicon wafer surface with two wavelength light different by more than an order of magnitude,
The intensity of scattered light from a crystal defect existing in a wafer is measured for each wavelength, and the density, size distribution, and depth distribution of the crystal defect are obtained. The principle is as follows.

It is assumed that the second irradiation light has a deeper penetration depth into the silicon wafer, that is, a longer wavelength. Let n be the refractive index of the sample material (here, silicon) at the wavelength λ.
Assuming that the extinction rate is k, the amplitude of the incident light is 1 / the value on the surface.
The penetration depth to be e is given by:

[0005]

１ = λ / 2πk Therefore, the intensity of irradiation light that has entered the substance at an incident angle θ from the air must be such that the refractive index in silicon is arcsin (sin θ / n) at a depth Z from the surface. Considering e
xp ((− 2Z / Γ) cos (arcsin (sin θ / n))) Then, light is incident on the sample surface from the air at an incident angle θ, and the irradiation light is Consider a case in which light scattered toward a sample surface due to a defect is detected at a certain solid angle, where the integrated scattering cross section of the defect at the detected solid angle is σ, irradiation light intensity I, and irradiation light at the wafer surface incident angle. Assuming that the transmittance is Ti and the transmittance of the scattered light from the defect from the inside of the wafer to the atmosphere is Ts, the intensity S of the scattered light from the defect located at a depth Z from the material surface is the attenuation and scattering of the irradiation light. It can be expressed as follows, taking into account both light attenuation.

[0006]

S = TiTsIσexp (− (2Z / Γ) (1 + 1 / {cos (arcsin
(sinθ / n))})) The refractive indices of the sample at wavelengths λ1 and λ2 are n1,
n2, penetration depths are Γ1 and Γ2, respectively, and irradiation light intensity is I
1, I2, the measured scattered light intensities are S1 and S2, respectively, the integrated scattering cross section is σ1, σ2, and the irradiation light transmittance is T.
Assuming that i1, Ti2, and the scattered light transmittance are Ts1, Ts2, respectively, the following equation is established.

[0007]

S1 = Ti1Ts1I1σ1exp (− (2Z / Γ1) (1 + 1 / {cos
(arcsin (sinθ / n1))}))

[0008]

S2 = Ti2Ts2I2σ2exp (− (2Z / Γ2) (1 + 1 / {cos (ar
csin (sinθ / n2))))) where Γ1 <Γ2. From Equations 3 and 4

[0009]

[Mathematical formula-see original document] Z = C1ln (C2 (S2 / S1) ([sigma] 1 / [sigma] 2)) where C1 and C2 are composed of the apparatus constant and the optical constant of the sample, and are defined by the following equations.

[0010]

C1 = 1 / ((2 / Γ1) (1 + 1 / {cos (arcsin (sinθ /
n1))})-(2 / Γ2) (1 + 1 / {cos (arcsin (sinθ / n2))}))

[0011]

C2 = (I1 / I2) (Ti1Ts1 / Ti2Ts2) Since C1 and C2 are device constants, (S2 / S1) (σ1 / σ2)
Is known, Z can be obtained. Here, (S2 / S1) is the ratio of the signal intensities and is obtained from the measured amount. Furthermore, the defect size (d)
Is sufficiently smaller than the irradiation wavelength and is in the Rayleigh scattering region (the particle size is 0.2 μm as a guide), σ∝
(d ^ 6) (λ ^ -4) holds, and σ1 / σ2 = (λ2 / λ1)
^ 4 relationship is obtained. By substituting this condition into Equation 5, the following equation is obtained.

[0012]

[Mathematical formula-see original document] Z = C3ln (S2 / S1) + C4 where C3 and C4 are device constants independent of defects.
From the above results, Z is obtained from S1 and S2.

Next, for the defect detected at the wavelength λ1 having the larger absorption coefficient, the particle size of the defect is obtained using S2.

[0014]

Ln (d) = (1/6) ln (S2) + C5 However, for this purpose, the condition of Γ1 << Γ2 is required for the penetration depth of the wavelengths λ1 and λ2. Equation 9 is derived under this condition as follows.

For a defect that satisfies Z <Γ1 << Γ2, Z / Γ2〜0 in equation (4), so that S2 = C6σ2. In addition, in the Rayleigh scattering region, σ2∝d ^ 6 holds, so that Expression 8 is obtained.

Based on this principle, in the above-mentioned known example, the wavelength of the first irradiation light having a short penetration depth is 532 nm.
Is selected, and the crystal defect depth and defect size from the wafer surface to the depth of 0.5 μm can be calculated from the scattered light intensities of the two wavelengths. By this technique, a group of defects induced by a device process such as a grown-in defect, hydrogen annealing, and ion implantation existing within a depth of 0.5 μm from a wafer surface as a device forming layer, It has become possible to evaluate the in-plane position, depth, defect size, etc. of a wafer such as polishing flaws and adhered foreign matter.

In the above-mentioned known example and the wafer surface foreign matter inspection apparatus utilizing a part of light scattering, the haze corresponding to the micro roughness of the wafer surface is measured by measuring the height of the light scattering background. Is possible. Micro-roughness on the surface of a silicon wafer is an important item as quality of a silicon wafer substrate for obtaining reliability of an oxide film whose thickness is reduced. It has been confirmed that as the microroughness of the surface increases, that is, as the haze value increases, the breakdown voltage of the oxide film deteriorates. On the other hand, 1200 °
Hydrogen annealing at a high temperature is effective in controlling the arrangement of silicon atoms on the wafer surface. It has been reported that the hydrogen annealing causes a specific azimuth plane to appear at the outermost surface of the wafer and improves the breakdown voltage characteristics of the formed oxide film. In this case, a step structure of an atomic plane appears on the outermost surface of the silicon wafer depending on the selected crystal orientation, and this is observed as an anisotropic haze intensity distribution in haze measurement. As described above, the haze measurement is important as a measurement method for evaluating the micro roughness of the silicon wafer surface.

[0018]

The surface that causes the haze in the haze measurement is not limited to the outermost surface of the wafer. For example, an SOI (Silicon On Insul) for forming a SiO 2 layer in a region directly below a device forming layer to lower the dielectric constant immediately below the device is formed.
ator) wafer has haze from the outermost surface of the SOI wafer and haze from the Si / SiO2 interface,
Measurement and analysis that separate the two are required. Also, S
In order for an SOI wafer manufactured by a bonding method, which is considered to be a promising method of manufacturing an OI wafer, to have reliable quality, it is necessary that no void exists between the SOI layer and the substrate wafer. For example, if the flatness or surface roughness of a wafer prepared for bonding is poor, sufficient adhesive strength cannot be obtained, and voids occur. Particularly, epitaxial wafers and ion-implanted wafers generally have rough surfaces, and are observed as haze. Therefore, when manufacturing a bonded SOI wafer using such a wafer as a substrate and analyzing the correlation between the characteristics of the SOI wafer and the surface roughness of the substrate wafer, haze measurement from the bonded substrate wafer is advantageous. Becomes

The haze value detected by the haze measurement is determined not only by the surface roughness of the silicon wafer but also when a defect exists at a high density in the surface layer of the wafer or when a foreign substance having a large particle size adheres to the surface. Is also observed as haze. For example, when performing haze measurement on a wafer that has been subjected to ion implantation and heat treatment, whether the obtained haze value is due to surface roughness caused by the heat treatment process, that is, due to surface roughness, or whether the obtained haze value is due to high density caused by ion implantation. It cannot be distinguished whether it is due to internal defects.

Further, in the above-described known crystal defect measuring method and the conventional wafer surface foreign matter inspection apparatus utilizing light scattering, an increase in the haze level means an increase in the background of light scattering. There is a possibility that the measurement may be erroneously performed as a surface foreign matter. Therefore, when performing defect measurement or surface foreign matter measurement, haze measurement is performed to evaluate whether the detected defect or foreign matter is noise derived from haze, and the result obtained by the defect measurement or surface foreign matter measurement is used. It is necessary to compare the results obtained by the haze measurement. In this case, if the defect measurement or surface foreign matter measurement and the haze measurement are performed separately, there are problems such as variations in the focusing accuracy of the optical system and the mounting accuracy of the silicon wafer on the sample stage.
The comparison or examination of the defect or foreign matter measurement result and the haze measurement result cannot be performed accurately.

[0021]

In order to solve the above problems, the present invention irradiates a sample with two wavelengths of light having different penetration depths into a solid, and measures haze for each wavelength. The micro-roughness of each interface can be evaluated for a sample having a plurality of interfaces at different depth positions near the surface. Further, the detection of the scattered light is performed using a detection optical system that detects at a low angle with respect to a direction perpendicular to the sample surface and a detection optical system that detects at a high angle with respect to the vertical direction of the sample surface. From the haze detected by the optical system, it is possible to evaluate the effect of haze due to surface foreign matter, and from the haze detected by the high-angle detection system, it is possible to evaluate the effect of haze due to high-density internal defects existing near the sample surface. Furthermore, since the haze measurement can be performed simultaneously with the measurement of the crystal defect or surface foreign matter and the results can be separately displayed, the noise caused by the detected crystal defect or surface foreign matter and the haze can be separated. This makes it possible to analyze crystal defects or surface foreign substances with higher accuracy.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A crystal defect measuring method and a crystal defect measuring device according to the present invention will be described below based on embodiments.

First, FIG. 1 is a block diagram showing an entire configuration of one embodiment of haze measurement using irradiation light of two wavelengths. The entire scan of the irradiation light on the sample wafer 1 is performed in a spiral manner by irradiating the sample wafer 1 whose rotation and center are translated. The irradiation light has a wavelength 532 required for crystal defect measurement, which can be measured simultaneously with haze measurement, as described below.
nm laser light 8 and a laser light 9 having a wavelength of 810 nm are used. Each irradiation light is incident on the silicon wafer surface with its polarization direction adjusted to p-polarization from the direction in which the optical axis of the incident light becomes the Brewster angle of silicon (about 75 °). Irradiation in the p-polarized light direction at the Brewster's angle is for reducing the loss of irradiation light intensity to internal defects because the reflectance on the silicon surface is lower than that of s-polarized light. This condition is not necessarily required, but it is desirable.

As for the selection of the wavelength, two wavelengths whose penetration depths into silicon are different by three times or more are selected. If the penetration depth differs by more than three times, the attenuation of the long wavelength becomes about 50% in the depth range where the short wavelength can penetrate, and the particle size of the scatterer is calculated from the scattered light signal of the long wavelength by Rayleigh scattering theory. Is estimated to be within 10%.

By detecting scattered light, haze mainly due to surface roughness of the silicon wafer 1 is obtained.
Crystal defects such as oxygen precipitates (SiO 2 particles) and transfer contained therein and COP (Crystal Originate)
d Particle), a defect (flaw) due to the polishing process, and other foreign substances adhering to the wafer surface are detected as scatterers.

The scattered light 10 from these scatterers is condensed using an objective lens 13, separated into light having a wavelength of 532 nm and light having a wavelength of 810 nm by a dichroic mirror 14, and condensed by lenses 15 and 16, respectively. Photodetectors 17, 18
Detect by wavelength. Each detection signal is sent to amplifier 1
After being amplified by 9 and 20, the low-pass filter 2
The DC components of the scattered light, that is, haze, are extracted by 1 and 22. The outputs of the low-pass filters 21 and 22 are digitized by the A / D converters 23 and 24 at certain time intervals controlled by the timer 25, and are taken into the computer 7 together with the detected coordinates (r.θ). The haze signal intensity may be acquired not by control by a timer but by a method of acquiring the haze intensity and the detected coordinates at every predetermined coordinate (r.θ) of the stage being scanned. In this way, the in-wafer distribution of the haze intensity for each wavelength, which is uniformly measured on the entire surface of the wafer, is smoothly interpolated for each detection point, and is displayed in different colors for each haze intensity. Wavelength 532
The penetration depth of the irradiation light of nm into the sample is about 0.5 μm, and the penetration depth of the irradiation light of wavelength 810 nm into the sample is about 5 μm.
μm, the haze at a wavelength of 532 nm is caused by the microroughness of the interface, high-density internal defects, and surface foreign matter existing within a range of about 0.5 μm from the sample surface, and the haze at a wavelength of 810 nm is about 5 μm from the sample surface. Micro-roughness at the interface, high-density internal defects, and surface foreign matter existing in the range. Therefore, by comparing the two results, it is possible to evaluate micro roughness and high-density internal defects having different depth regions from the sample surface. Further, if the selection of the wavelength of the irradiation light is changed according to the purpose, haze analysis in different depth regions can be performed.

Next, an embodiment in which haze measurement is performed using detection optical systems in two different directions will be described. FIG. 2 shows an example in which, in addition to the haze measurement using the above-described irradiation light of two wavelengths, the haze measurement is performed using a detection optical system in two different directions for one specific wavelength of the irradiation light of two wavelengths. FIG. As in the embodiment of FIG.
A laser beam 8 having a wavelength of 532 nm and a laser beam 9 having a wavelength of 810 nm are incident on the silicon wafer surface in a direction in which the optical axis of the incident light becomes the Brewster angle (about 75 °) of silicon to p-polarized light. The scattered light from the sample wafer 1 is detected as a first detection direction at a low angle with respect to the vertical direction of the sample surface, in this case, the direction of the objective lens 13 at 0 °. The scattered light condensed by the objective lens 13 is separated into light having a wavelength of 532 nm and light having a wavelength of 810 nm by a dichroic mirror 14, condensed by lenses 15 and 16, and detected by wavelengths by photodetectors 17 and 18. . As the second detection direction, detection is performed at a high angle with respect to the vertical direction of the sample surface, in this case, the direction of the lens 27 which is a direction equal to or larger than the incident angle of the irradiation light (about 75 °). The scattered light 26 scattered in the direction of the lens 27 is collected, and
8, only the scattered light having a wavelength of 532 nm is selected, and the light is condensed on the photodetector 30 by the lens 29 and detected. Output signals from the respective photodetectors 17, 18, 30 are amplified by amplifiers 19, 20, 3,
After being amplified by 1, the low-pass filters 21, 22, 32
As a result, a haze component is extracted. Low-pass filter 2
The outputs of 1, 22, and 32 are digitized by A / D converters 23, 24, and 33 at certain time intervals controlled by a timer 25, and are taken into the computer 7 together with the detected coordinates (r.θ). The in-plane distribution of each haze intensity can be displayed for each wavelength or for each detection direction.
In order to display the difference in the haze intensities detected in the directions more clearly, it is possible to display the in-plane distribution of the ratio of the haze intensities detected in the two directions. Each of the above 2
As described below, the selection of the angle of the detection direction can be performed to determine whether the detected scatterer is a crystal defect or a surface foreign matter in the crystal defect or surface foreign matter measurement that can be measured simultaneously with the haze measurement. Therefore, the first detection direction is the direction in which the scattered light intensity from the crystal defect is relatively stronger than the second selection direction and the scattered light intensity in the first detection direction from the surface foreign matter is the second selection direction. In the second detection direction, on the contrary, the scattered light intensity from the crystal defect is relatively weaker than the first detection direction and the scattered light in the second detection direction from the surface foreign matter. The direction in which the intensity is relatively stronger than the first direction is selected. Thus, it is possible to determine whether the scatterer is a crystal defect or a surface foreign matter, based on the magnitude relationship of the scattered light intensity from the same scatterer detected in the two detection directions. Among the hazes detected in the two detection directions selected as described above, when a high-density internal defect exists inside the sample, the first direction is more than the second detection direction, that is, the direction of the lens 27. That is, haze due to high-density internal defects is detected in the direction of the objective lens 13 which is relatively strong. When surface foreign matter is present, haze due to surface foreign matter is detected in the second direction, that is, the direction of the lens 27, is relatively stronger than the first detection direction, that is, the direction of the objective lens 13. Therefore, in detection in only one direction, it is determined whether the detected haze is mainly due to micro-roughness, or mainly due to high-density internal defects, or even due to surface foreign matter. Although it is difficult to determine, by comparing the hazes detected in the above two directions, it is possible to individually analyze the effects of the microroughness, high-density internal defects and surface foreign matter on the haze. Further, in the above-described embodiment, an example is described in which scattered light having a wavelength of 523 nm is detected in two different directions.
Depending on the selection of the optical filter 28, scattered light having a wavelength of 810 nm may be detected in two different directions.

Finally, an embodiment in which the haze measurement by the irradiation light of the two wavelengths, the haze measurement by the two detection directions, and the crystal defect measurement or the surface foreign matter measurement are performed simultaneously will be described. FIG. 3 is a block diagram showing an example. The time change of the scattered light intensity of the scattered light 10 and 26 from the sample wafer 1 generated by scanning the moving sample wafer 1 with the irradiation light 8 and 9 of two wavelengths includes the micro roughness of the sample wafer and the sample. Haze (DC component) due to high-density internal defects and surface foreign matter existing inside, and pulse scattered light (AC component) generated by crystal defects and surface foreign matter are included.

Therefore, by separating and detecting both using a filter suitable for each frequency band, it is possible to simultaneously measure haze and crystal defects or surface foreign matter. The scattered light 10 detected in the direction of the objective lens 13 is separated for each wavelength by a dichroic mirror 14 and detected by photodetectors 17 and 18.

The scattered light 2 detected in the direction of the lens 27
In No. 6, light having a wavelength of 523 nm is extracted by the optical filter 28 and detected by the photodetector 30. Each photodetector 1
Output signals from 7, 18, and 30 are amplifiers 19, 20, 3,
After being amplified by 1, the low-pass filters 21 and 2
DC components, that is, haze components are extracted by 2 and 32, and AC components, that is, pulse scattered light from crystal defects or surface foreign matter are extracted by high-pass filters 34, 35, and 36. In the haze measurement, as in the case of the embodiment shown in FIG. 1 or 2, the output from the low-pass filter is A / A at a certain time interval controlled by the timer 25.
Digitization is performed by the D converters 23, 24, and 33, and the digitized data is taken into the computer 7 together with the detected coordinates (r.θ). On the other hand, the pulse height of the pulse scattered light extracted by the high-pass filters 34, 35, 36
7, 38, and 39, respectively, to determine whether or not a predetermined threshold value is exceeded. According to a predetermined measurement mode, for example, the intensity of the pulse scattered light having a wavelength of 532 nm detected in the direction of the objective lens 13 Or wavelength 8
When one of the pulse scattered light intensities of 10 nm exceeds a preset threshold value, the pulse scattered light intensity held by each of the peak hold circuits 44, 45, and 46 is output, and A / A D converter 4
It is digitized by 7, 48, and 49 and taken into the computer 7 together with the detected coordinates (r.θ). The outputs of the comparators 37, 38, 39 are latched 41, 42, 43
To the computer 7 together with the pulse scattered light intensity from each defect or surface foreign matter and the detected coordinates. The crystal defects or surface foreign matter detected in this way are two directions of the direction of the objective lens 13 and the direction of the lens 27.
The magnitude of the pulse scattered light having a wavelength of 532 nm detected in the direction identifies whether they are crystal defects or surface foreign substances, and the pulse scattered light having a wavelength of 532 nm detected in the direction of the objective lens 13. Intensity and wavelength 8
The particle size and depth are calculated from the pulse scattered light intensity of 10 nm.

In the above-described crystal defect measurement or surface foreign matter measurement, if the value of the haze detected at the same time is high, the AC component (proportional to the square root of the haze) derived from the haze becomes large. Exceeding the threshold value for detecting the pulse scattered light may cause erroneous detection as a crystal defect or surface foreign matter. However, in the present embodiment, since the haze measurement can be performed simultaneously with the measurement of the crystal defect or the surface foreign matter, for example, the in-plane distribution of the haze intensity and the in-plane distribution of the crystal defect or the surface foreign matter are superimposed and displayed. By comparing the distribution state of the region with a high haze intensity with the distribution state of crystal defects or surface foreign matter, it becomes possible to evaluate whether the detected crystal defect or surface foreign matter is noise derived from haze.

[0032]

As described above, according to the present invention, in the haze measurement near the crystal surface, it is possible to evaluate the micro roughness of each interface of the crystal sample having an interface other than the crystal surface. Haze measurement that separates haze due to density internal defects and surface foreign matter becomes possible. In addition, it becomes possible to evaluate a crystal defect or a surface foreign matter in which the influence of haze is separated in the crystal defect measurement or the surface foreign matter measurement.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram (1) of the invention.

FIG. 2 is a schematic configuration diagram (2) of the invention.

FIG. 3 is a schematic configuration diagram (3) of the invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Sample wafer, 2 ... Wafer fixing jig, 3 ... Rotation stage, 4 ... R stage, 5 ... Driver, 7 ... Computer, 8, 9 ... Irradiation light, 10, 26 ... Scattered light, 11 ... Wavelength 532nm , A laser having a wavelength of 810 nm, an objective lens, a dichroic mirror,
15, 16, 27, 29 ... lens, 17, 18, 30 ...
Photodetectors, 19, 20, 31 ... Amplifiers, 21, 22, 3
2: Low-pass filter, 23, 24, 33, 47, 4
8, 49 A / D converter, 25 timer, 28 optical filter, 34, 35, 36 high-pass filter, 3
7, 38, 39... Comparator, 40... OR circuit, 4
1, 42, 43 ... latch, 44, 45, 46 ... peak hold circuit.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor, Muneshima Maejima 882, Omo-shi, Hitachi, Ibaraki Pref., Ltd.In the measuring instrument group of Hitachi, Ltd. (72) Inventor Yoshitaka Kodama 882, Omo, Oita, Hitachinaka-shi, Ibaraki (72) Inventor Jin Komuro 882-mo, Oaza-shi, Hitachinaka-shi, Ibaraki Prefecture Incorporated Hitachi-Industrial Instrument Group (72) Kazuo Takeda 1-280-1, Higashi-Koikekubo, Kokubunji-shi, Tokyo F-term in Hitachi Central Research Laboratory (for reference) 2F065 AA11 AA50 AA60 BB22 BB23 CC19 FF42 FF43 FF49 GG04 GG23 HH04 HH09 HH12 JJ01 JJ05 JJ15 LL04 LL20 MM03 MM04 PP12 QQ03 QQ33 SS01 2G052 A05 CB03 BB16 EE01 EE02 EE11 HH06 MM04 MM05 MM09

Claims (10)

[Claims] 1. A method for measuring any of defects, surface foreign matter, and surface roughness on a solid surface or inside by irradiating the solid with light and detecting scattered light from the solid surface or inside. A semiconductor inspection apparatus, wherein two wavelengths of light having different depths are irradiated, and haze caused by the surface roughness is simultaneously measured for each wavelength. 2. The semiconductor inspection apparatus according to claim 1, further comprising a display means for simultaneously measuring a defect on the solid surface or inside, a surface foreign matter, and surface roughness, and displaying them separately. 3. The measurement of the AC component according to claim 1, wherein a change in the scattered light intensity generated from the surface or inside of the solid is separated into an AC component and a DC component by relatively scanning the solid sample or the irradiation light. A semiconductor inspection apparatus for obtaining defect and surface foreign matter information by measuring the DC component. 4. A method for measuring any of defects, surface foreign matter, and surface roughness on a solid surface or inside by irradiating light into the solid and detecting scattered light from the solid surface or inside, wherein two different directions are used. That is, having a detection optical system for detecting scattered light in a low angle direction and a detection optical system for detecting scattered light in a high angle direction with respect to the vertical direction of the solid surface,
A semiconductor inspection device wherein haze is measured by the two detection systems. 5. The semiconductor inspection apparatus according to claim 4, further comprising display means for simultaneously measuring a defect on a solid surface or inside, a surface foreign matter, and surface roughness, and displaying them separately. 6. The measurement of the AC component according to claim 5, wherein a change in the intensity of scattered light generated from the surface or inside of the solid is separated into an AC component and a DC component by relatively scanning the solid sample or irradiation light. A semiconductor inspection apparatus for obtaining defect and surface foreign matter information by measuring the DC component. 7. The sample surface distribution according to claim 4, wherein a ratio of a haze intensity detected in a low angle direction to a haze intensity detected in a high angle direction with respect to two different directions, that is, a vertical direction of the solid surface is determined. A semiconductor inspection device comprising a display means for displaying. 8. A method for irradiating light into a solid and detecting scattered light from the surface or inside of the solid to measure any of defects, surface foreign matter, and surface roughness on the surface or inside of the solid. An irradiation optical system that irradiates light of two wavelengths with different depths, a detection optical system that detects scattered light in two different directions, that is, a low angle direction with respect to the vertical direction of the solid surface, and a scattered light that detects scattered light in a high angle direction A semiconductor inspection apparatus, comprising: a detection optical system for detecting a wavelength of light; and a haze of two wavelengths generated by the irradiation of the light of two wavelengths is measured for each wavelength by the detection optical system in two directions. 9. The semiconductor inspection apparatus according to claim 8, further comprising display means for simultaneously measuring a defect on the solid surface or inside, a surface foreign matter, and surface roughness, and displaying them separately. 10. A scattered light intensity change generated from the surface or inside of a solid by relatively scanning a solid sample or irradiation light according to claim 8 or 9, wherein an AC component and a DC component are separated. Surface foreign matter information
A semiconductor inspection apparatus characterized in that surface roughness information is obtained from a DC component.