JPH11237225A - Defect inspection device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily observe how widely crystal defects of which size distribute, by indicating on a display means the distribution of defects corresponding to the depth set by a setting means. SOLUTION: Scattered light 2 from defects is condensed by an objective lens 3, split by a dichroic mirror 4, separated into wave lengths of 810 nm and 532 nm, condensed with lenses 11 and 21 and detected with photodetectors 12 and 22 for each wave length. The detected signals are amplified with amplifiers 13 and 23, respectively and peak signal intensity held by peak hold circuits 15 and 25 are outputted, respectively, which are digitalized by A/D converters 16 and 26 and taken in a computer 6. A display is connected to the computer 6 and information on defects is indicated. By this, the distribution of defects is indicated based on the existing depth of the defects, size or both of them and so the tendency of generated defects is specified.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a defect inspection apparatus, and more particularly to an apparatus for measuring a crystal defect such as a precipitate or a stacking fault in a semiconductor silicon wafer and an apparatus for inspecting foreign matter on a wafer surface.

[0002]

2. Description of the Related Art As the degree of integration of LSIs (Large Scale Integrated Circuits) is improved, MOS (Metal Oxide
miconductor) A major problem is a decrease in the rate of obtaining non-defective products and reliability due to defective transistors. MO
Typical causes of S transistor failure include dielectric breakdown of the gate oxide film and excessive leakage current at the junction. Many of these MOS transistor defects are directly or indirectly caused by crystal defects in the silicon substrate. That is, in the LSI manufacturing process, if there is a crystal defect in the surface region of the silicon substrate that is converted to a silicon oxide film by oxidation, a structural defect is formed in the silicon oxide film, and dielectric breakdown occurs during LSI operation. Also, if a crystal defect exists in the depletion layer of the junction, a large amount of leak current is generated. As described above, when a crystal defect is formed in a surface region where an element is formed in a silicon substrate, MOS
It is not preferable because a defect of the transistor occurs.

As described above, defect measurement is important in silicon crystal quality control. As a method of measuring such a defect, a method of irradiating infrared rays transmitted through silicon and detecting scattered light has been used.

[0004] Crystal defects are present and distributed at any position inside the single crystal silicon wafer. Generally, when manufacturing a device such as an IC, a crystal surface (mirror surface) to 0.5 μm
There is a demand for the development of a wafer having no crystal defects within it and a deep region containing high-density defects.

In developing such a wafer, it is necessary to observe these crystal defects and reflect the observation results in the development.
Abstracts of the 1996 International Conference
on Solid State Devices and Materials, August 26-
29, 1996 ”and“ Applied Physics Vol. 65, No. 11 (19
96) There is a technique described in "Pages 1162 to 1163".

[0006]

In such a known example, the absorbance of a silicon wafer has different characteristics.
A silicon wafer is irradiated with two types of light beams having different wavelengths, and light scattered from crystal defects existing in the silicon wafer is detected and analyzed to display the distribution of crystal defect portions, The total number of crystal defects at each depth was measured and displayed.

In observing and analyzing crystal defects inherent in a silicon wafer, the distribution of these crystal defects and the total number of crystal defects for each depth from the surface are very important factors. It can be said that the crystal defect display device has brought some results in that sense. However, the inventor of the present invention believes that it is very important that crystal defects of a silicon wafer are distributed at various predetermined depth positions and at what size and how much. I found something.

For example, in the case of the hydrogen annealing heat treatment, the progress of the heat treatment is determined by observing the size and distribution of the SiO ₂ precipitate at a predetermined depth of the silicon wafer. . Such observation results can optimally determine the heat treatment conditions such as the processing time and temperature in the hydrogen annealing heat treatment.

[0009] In addition, COP (Cristal Originated Particle), which had many parts whose generation behavior is unknown, has grown
-In Defects leave traces as pits on the surface of a silicon wafer.However, if we can observe how deeply they are distributed on the silicon wafer, we can easily analyze the optimal conditions for a process that does not generate COP. become able to.

According to the present invention, a crystal defect of a silicon wafer or the like can be easily observed at various predetermined depth positions, in which size and how much the crystal defect is distributed. It is an object to provide an inspection device.

[0011]

According to the present invention, in order to achieve the above-mentioned object, the surface of the sample and the surface of the sample exist based on light information from the sample obtained by irradiating the object with light. In a defect inspection apparatus for detecting a defect, a detecting unit for detecting a depth at which the defect exists and a distribution of the defect based on the optical information, a unit for setting a depth at which the defect exists, and the detecting unit A means for displaying the distribution of defects obtained in step (a), wherein the display means displays the distribution of defects corresponding to the depth set by the setting means.

With the provision of the above-described defect inspection apparatus, it is possible to selectively display a defect whose cause differs depending on the depth by setting a specific depth.

According to the present invention, there is further provided a defect inspection apparatus for detecting a defect existing in a surface of a specimen and a specimen based on light information from the specimen obtained by irradiating the specimen with light. Detecting means for detecting the size of the defect and the distribution of the defect based on the information, means for setting the size of the defect, and means for displaying the distribution of the defect obtained by the detecting means. The means displays a defect distribution according to the size set by the setting means.

With the provision of the above-described defect inspection apparatus, defects having different causes depending on the size of the defect can be obtained.
It can be selectively displayed by setting a specific size.

Further, according to the present invention, based on light information from the subject obtained by irradiating the subject with light,
In a defect inspection apparatus that detects a defect existing in the surface of the specimen and the specimen, a unit that detects defect information for each predetermined unit area of the specimen based on the optical information, and a defect information that is detected by the unit. A defect inspection apparatus comprising: display means for displaying defect information for each unit area based on the defect information.

With the above configuration, the defect information can be confirmed for each unit area, so that the distribution tendency of defects can be visually and easily determined as compared with the above-described simple distribution map of defects. .

The details will be described in detail in the embodiments of the invention.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A crystal defect measuring method and a crystal defect measuring device according to the present invention will be described below based on embodiments. FIG. 1 is a block diagram showing an overall configuration of a crystal defect measuring apparatus according to one embodiment of the present invention. The entire scanning of the irradiation light on the silicon wafer is performed in a spiral manner by irradiating the silicon wafer whose rotational movement and center are translated. At the moment the scatterer passes through the irradiation area, pulse-like scattered light is generated. As the irradiation light, the light from the laser 10 having a wavelength of 532 nm and the light from the laser 20 having a wavelength of 810 nm are applied to the sample wafer 1 fixed to the wafer fixture 44 on the rotary stage 41. By detecting the scattered light 2 from each defect, the sample wafer 1
Oxygen precipitates (SiO ₂ particles) contained therein, crystal defects such as dislocations, and other foreign substances adhering to the wafer surface are detected as scatterers.

The scattered light 2 from the defect is condensed by the objective lens 3, branched by the dichroic mirror 4,
The light of 0 nm and 532 nm is separated, and
The light is condensed by 1 and detected by the photodetectors 12 and 22 for each wavelength. The detected signals are supplied to amplifiers 13 and 23, respectively.
Are amplified by the respective peak hold circuits 1
The peak signal intensities held by 5, 5 are output and digitized by A / D converters 16, 26 and taken into computer 6.

At the same time, a system is provided for detecting scattered light that is scattered at an angle equal to or greater than the Brewster angle with respect to the wafer surface. The scattered light scattered at an angle equal to or larger than the Brewster angle is collected by the lens 50, and the scattered light having a wavelength of 532 nm is selected by the filter 30. Then, the light is condensed on the photodetector 32 by the lens 31, the output signal is amplified by the amplifier 33, and the peak signal intensity held by the peak hold circuit 35 is digitized by the A / D converter 36 and taken into the computer 6.

On the other hand, a driver 40,
The coordinates (R, θ) of the rotary encoder and the translation encoder attached to the wafer fixing jig 44 while scanning the rotation stage 41 and the R stage 43 in the rotation direction (θ direction) and the radial direction (R direction) using ) Is monitored while scattered light is measured, and the coordinates (R, θ) at the moment when the scattered light is generated from the defect are determined together with the scattered light intensity signal by the computer 6.
Take in.

Note that a display (not shown) is connected to the computer 6 to display defect information to be described later.

The data capture timing when scattered light is generated from the above defects will be described with reference to the scattered light signal capture timing diagram shown in FIG. As shown in FIG. 2A, the irradiation light having a wavelength of 532 nm or 810 nm is applied to the defect and scattered light is captured by the respective detectors along with scanning. Focusing on 532 nm, FIG.
When the output signal of the amplifier 13 exceeds a set threshold value 201 as shown in FIG. 2B, the output signal from the comparator 14 shown in FIG. 5, a trigger output is given to the peak hold circuit 15, and as shown in FIG.
5 holds the peak intensity of the amplifier 13. 810n
In the case of the scattered light signal of m or the scattered light intensity signal by the photodetector 32, the peak intensity is held in the peak hold circuit 25 or 35 as in the case of the scattered light signal of 532 nm.

Each of the peak intensity values is digitized by each of the A / D converters 16, 26 and 36 after a predetermined time from the trigger output from the OR circuit 5, as shown in FIG. After the A / D conversion is completed as shown in ()), the data is taken into the computer 6 and stored in the memory. At this time, the computer 6 simultaneously stores the coordinates (R, θ) of the rotary encoder and the translation encoder in the memory as the position where the scattered light is generated in the in-plane position of the silicon wafer. After the data is taken into the computer 6, the output of the OR circuit and the peak hold are also reset. In this embodiment, the coordinates are stored together with the type of the unit area to which the coordinates belong.

FIG. 3A shows a relationship between the depth position and the size of a defect that can be detected when the threshold value of each detector is exceeded. As described above, there is either a scattered light intensity signal at 532 nm (signal from the photodetector 12), a scattered light intensity signal at 810 nm (signal from the photodetector 22), or a scattered light intensity signal from the photodetector 32. By taking in the scattered light intensity and the wafer surface at that time when the threshold value is exceeded, the scattered light detection in the defect detection ranges 301 and 532 nm by the trigger of the surface foreign matter detection detector shown in FIG. Defect detection ranges 302 and 81 triggered by the trigger of the detector
The defect detection range 303 caused by the trigger of the scattered light detector at 0 nm can be entirely included and detected. This makes it possible to detect defects including the epitaxial layer and the substrate under the epitaxial layer in addition to the defect of the epitaxial layer of about 1 μm in a single wafer full-surface scan measurement, for example, in the future mainstream epitaxial wafer. Was. Since the defect characteristics are different between the epitaxial layer and the substrate under the epitaxial layer, the fact that both defects can be comprehensively detected is a key to analyzing a cause of a defect in a wafer manufacturing process. For example, as shown in FIG.
Defects detected by the trigger of the scattered light detector due to m can detect defects in the epitaxial layer, but cannot detect defects even in deeper portions. As shown in FIG. 3C, in the defect detection by the trigger of the scattered light detector at 810 nm, a defect called a slip in a deep portion up to a depth of 5 μm was detected. Slip is a defect that occurs at the edge of a wafer due to a temperature difference between a central portion and a peripheral portion when the wafer is heat-treated, and becomes a serious problem when the wafer has a large diameter. The slip generated around the wafer in this example provides a clue that there is a problem in the operation of inserting the wafer into the heat treatment furnace.

In the above irradiation mode, the wavelength is 532 nm.
The irradiation position may be shifted so that the defect is irradiated first with the wavelength of 532 nm in time with the light having the wavelength of 810 nm along with the scanning. When the scattered light intensity signal due to the wavelength 532 nm (the signal of the photodetector 12) does not exceed the threshold value and the scattered light intensity signal due to the wavelength of 810 nm (the signal of the photodetector 22) exceeds a certain threshold value Has a wavelength of 810n
The signal of only m is taken in. In this case, since the defect whose depth position can be determined is within the penetration depth of the wavelength 532 nm, the value of the scattered light intensity signal (signal of the photodetector 12) at the wavelength 532 nm is smaller than a certain threshold value. This is because it is not necessary to derive the depth position for the data having.

The depth position and defect size (particle size) of the embodiment of the present invention can be obtained as follows.

The calculation procedure for finding the depth position of a defect is described below. Assuming that the refractive index at the wavelength λ of the substance is n and the extinction rate is k, the penetration depth に な る at which the amplitude of the incident light becomes 1 / e of the value immediately below the surface is given by Equation 1.

[0029]

Г = λ / 2πk (1) Therefore, the intensity of light that has entered the substance from the air at an incident angle θ is exp ((− 2z / Г) at a depth z from the surface.
cos (arcsin (sinθ / n))) is attenuated below the surface. Therefore, when the material is irradiated from the air at an incident angle θ and the scattered light toward the sample surface is detected at a certain detection solid angle, the integrated scattering cross section is σ, and the incident light intensity is I, The intensity S of the scattered light from the defect at the position of the depth z can be expressed as in Expression 2.

[0030]

S = Iσexp [− (2z / Г) (1 + 1 / {cos (arcsin (sinθ / n))})] × Ti × Tf (2) where Ti is a substance from the atmosphere of the incident light. The transmittance, Tf, just below the inner surface, is the transmittance of the scattered light from just below the inner surface of the substance to the atmosphere.

Now, the refractive indices of the substance with respect to the wavelengths λ1 and λ2 are n1 and n2, respectively, and the penetration depths are {1 and {2}, respectively.
2, the incident light intensities are I1 and I2, the measured scattered light intensities are S1 and S2, respectively, the integrated scattering cross sections are σ1 and σ2, respectively, and the transmittance of the incident light immediately below the inner surface of the material is T1i, T2i, respectively. Assuming that the transmittance of the scattered light from immediately below the inner surface of the substance to the atmosphere is T1f and T2f, respectively, Equations 3 and 4 hold.

[0032]

S1 = I1 · σ1exp [− (2z / Г1) (1 + 1 / {cos (arcsin (sinθ / n1))})] × T1i × T1f (3)

[0033]

S2 = I2 · σ2exp [− (2z / Г2) (1 + 1 / {cos (arcsin (sinθ / n2))})] × T2i × T2f (4) As described above, the depth position z of the defect is Equations 5 to 7 are given.

[0034]

Z = C1 · ln [C2 (S1 / S2) (σ2 / σ1)] (5)

[0035]

C1 = 1 / [(4πk2 / λ2) (1 + 1 / {cos (arcsin (sinθ / n2))}) − (4πk1 / λ1) (1 + 1 / {cos (arcsin (sinθ / n1))}) ] ... (6)

[0036]

C2 = I2 / I1 × T2i × T2f / (T1i × T1f) (7) In the present invention, in order to obtain the depth position of the defect, it is necessary to obtain the size of the defect first. In Equation 3, the light of wavelength λ1 transmitted through the sample, that is, Г1, is sufficiently large ({1}).
Г2) When light having a wavelength λ1 is used, the integrated scattering cross section σ1 at a certain detection solid angle can be expressed as in Expression 8.

[0037]

Σ1 = S1 / (I1 × T1i × T1f) (8) Since the values of T1i and T1f can be calculated according to the optical principle, if the value of I1 is measured in advance, S1 can be measured. Gives the value of the integrated scattering cross section σ1. Therefore, if the refractive index of the defect is known, the Mie scattering theoretical formula (for example, Born Wolff, principle of optics (Tokai University, 1975)
Year), pages 902 to 971), the size of the defect can be determined.

If the size is known, the wavelength λ2 absorbed by the sample
Since the integrated scattering cross section σ2 at a certain detection solid angle due to the light is determined by calculation, the ratio σ1 / σ2 of the integrated scattering cross section can be determined. Similarly to the above, the value of C2 can be obtained from Equation 7 by calculating the values of T2i and T2f according to the optical principle and measuring the value of I2 in advance. Also,
The value of C1 is also determined from the material constant and the experimental conditions according to Equation 1. By substituting these values into Equation 5, the depth position z can be obtained.

The size (particle size) of the defect may be obtained by Rayleigh scattering. The method for calculating the particle size by Rayleigh scattering is described in Applied Physics, Vol. 65, No. 11, (199)
6) Introduced on pages 1162 to 1163.

The depth position of the defect and the size of the defect obtained as described above are displayed as follows based on the scattered light intensity signal, the detected coordinates, the type of the unit area to which the coordinates belong, and the like. Used to perform

FIG. 4 shows an example of selective display of defect distribution according to the present invention. As shown in FIG. 4 (a), a means is provided for numerically inputting the particle size in terms of polyester as the depth position and size of the defect by numerical input.
As shown in (b), the surface distribution is displayed as a defect 401 and a surface foreign matter 402 in the surface layer.

As described above, after the entire surface of the wafer is scanned and measured, a specific problem area range or the size of a defect which affects device formation can be arbitrarily directly input and designated. The distribution of defects or the distribution of foreign particles on the surface can be arbitrarily selected and displayed.

Defects (including scratches) formed on the wafer are as follows:
The particle size and existing depth may differ depending on the step in the manufacturing process. That is, if the grain size and the existing depth of the defect can be confirmed, it is possible to specify where in the manufacturing process the defect has occurred.

Thus, if the specific grain size, the specific depth, or both can be selectively set, and the defects conforming to these settings can be selectively displayed, how many defects have occurred in a specific process? , It becomes easy to observe the tendency.

Applied physics 65 introduced in the section of the prior art
Volume 11 (1996) pages 1162 to 1163
In the example of the in-plane distribution disclosed on the page, since all the defects are displayed, it is difficult to selectively confirm the defects having the specific information.

In the embodiment of the present invention, the depth at which a defect exists,
Since the size (particle size) can be set and the distribution of the defects on the wafer can be displayed based on the setting, the process in which the defect occurs and the occurrence of the defect depend on the depth of the existing defect and the degree of the size. It becomes possible to grasp the tendency of the defect. Specific examples will be described below in detail.

For a semiconductor wafer (silicon wafer), a single crystal ingot obtained by a single crystal manufacturing method such as the CZ method or the FZ method is cut into a disk shape (slicing), and then rough polishing (lapping) and chemical polishing ( After a shaving process such as etching) and mirror polishing (polishing),
Finish cleaning is performed. Also, epitaxial wafers
Thereafter, processes such as vapor-phase growth of the epitaxial layer and mirror polishing are performed. Some wafers have different processes depending on the type of wafer.

In the above process, defects (flaws) related to polishing tend to be formed over a wide range of particle sizes on the wafer surface. Further, heat treatment in the single crystal manufacturing process tends to increase the grain size and increase defects (COP) appearing on the surface. Further, in the cleaning step, defects appearing on the wafer surface tend to increase.

Further, crystal defects formed inside the wafer are as follows:
For example, oxygen precipitates (SiO ₂ ), which occur during the growth process of the epitaxial layer and particularly crystal defects, tend to increase in the depth direction of the wafer.

As described above, there is a tendency for defects depending on the manufacturing process, and the defects inherent in each manufacturing process are identified and displayed as other defects, thereby specifying the tendency of the defects generated in the process. be able to.

For example, by setting the depth direction, it is possible to determine whether it is a crystal defect existing inside the wafer or a defect generated by polishing or cleaning, and a defect generated by a specific generation factor due to a wafer image in which these are not mixed. It is possible to easily determine the tendency and degree of

If a device is formed at a location where a crystal defect is present, the electrical characteristics of the device are deteriorated. Therefore, in principle, a device cannot be formed at a location where a defect exists. However, the allowable depth at which a defect exists differs depending on the type of device to be formed. Therefore, quality control according to the type of wafer can be performed by observation based on the setting in the depth direction.

Further, it is possible to observe whether or not the vapor phase growth of the epitaxial layer is performed smoothly.

As shown in FIG. 4C, the number of defects for each grain size and the number of defects for each depth position are displayed in a histogram, and a trace cursor 403 for designating the minimum grain size and a maximum grain size are designated. The trace cursor 404, the trace cursor 405 for designating the minimum depth position, and the trace cursor 406 for designating the maximum depth position are designated on the respective graphs with a pointing device such as a mouse, and shown in FIG. The surface distribution may be displayed as follows.
This makes it possible to visually select the specific problem area range where the number of defects is actually large, and to selectively set and display the grain size and depth where the number of defects is large, as well as the surface of the area where the problem is actually recognized. It is also possible to selectively display the distribution of crystal defects or the surface foreign matter present in the vicinity.

In this embodiment, the defect existing at the set depth is displayed while being distinguished from other defects. However, for example, only the defect existing at the set depth may be displayed.

FIG. 5 shows a display example of a list of defect distributions according to the present invention. In this embodiment, the number of existing defects is color-coded for the number of existing defects in each of the subdivided unit regions on the display imitating a wafer, and one unit region is three-dimensionally displayed in a cylindrical shape.

The display for each unit area is superior to specifying a defect occurrence tendency as compared with a mere defect distribution chart.

The maximum grain size of the defect existing at each depth position is displayed in proportion to the diameter of the cylinder. Further, surface foreign matter is displayed as a cube. Thereby, the distribution tendency of the defect area on the wafer surface and the surface layer can be identified at a glance, and the problem area can be quickly specified.

For example, depending on whether the defects are uniformly distributed without depending on the depth, whether the defects are close to the surface layer, or whether there are many defects in a deep region, the surface processing defect and the internal defect are determined. This makes it easy to identify and judge whether the crystal is defective. Further, it is possible to determine at a glance whether the foreign matter is a surface foreign matter or a crystal defect.

According to the above display, a cylindrical bar graph is adopted so that the number of defects per unit area, the depth, and the maximum grain size can be easily recognized. This bar graph makes it easy to grasp the relevance of a plurality of pieces of information. In addition, since information such as the number of defects and the maximum grain size may be different for each depth, the display form shown in FIG. 5 makes it easy to visually determine the difference.

The apparatus of this embodiment detects the depth, size, and position of a defect. If the tendency of occurrence of a defect can be determined based on the plurality of pieces of information, defect analysis can be easily performed.

Further, by such an analysis, the computer 6
FIG. 6 is a flowchart of the defect information output corresponding to the obtained surface position of the wafer by setting the depth of the defective portion performed in step (1).

That is, in Step 1, a data table of the scattered light intensities S1 and S2 detected at the coordinate positions of the radius (R) and the direction (θ) on the stage on which the wafer is mounted is created based on Expressions 3 and 4. From these scattered light intensities S1 and S2
In Step 2, the depth (Z) and the grain size (d) of the defect are calculated based on Equations 5, 8 and the like, and the depth (Z), the depth (Z) corresponding to the coordinate position of the radius (R) and the direction (θ) are calculated. A data table of the particle size (d) is created.

Then, in Step 3, when the depth (Z) or the grain size (d) of the defect is input and selected from the display screen as shown in FIG. 4A, a data table of the selected result is obtained. . When the display of the distribution of the defect is commanded in Step 4, the defect having the selected depth (Z) or grain size (d) is displayed corresponding to the radius (R) and the direction (θ) on the stage. Then, a display screen of the defect distribution as shown in FIG. 4B is obtained.

[0065]

As described above, according to the present invention, the distribution of defects is displayed on the basis of the setting of the depth of the defects, the size of the defects, or both of them. Can be specified, and it becomes easy to specify what defect has occurred in which manufacturing process.

Since the defect information is displayed for each unit area, it is easy to specify the tendency of the defect to occur.

As described above, the defect analysis is facilitated, and the provision of a defect inspection apparatus suitable for quality control of a manufactured product and identification of a defect generation factor can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of the invention.

FIG. 2 is a timing chart of capturing a scattered light signal.

FIG. 3 is a diagram showing a relation of a detection range by a scattered light signal.

FIG. 4 is a diagram showing an example of selective display of defect distribution.

FIG. 5 is a diagram showing an example of a list display of defect distribution.

FIG. 6 is obtained by setting the depth of a defect,
9 is a flowchart of a computer that outputs information on a defective portion.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Sample wafer, 2 ... Scattered light from a defect, 3 ... Objective lens, 4 ... Dichroic mirror, 5 ... OR circuit, 6 ...
Computer, 10 ... laser of wavelength 532nm, 11,
21, 31, 50 ... lens, 12, 22, 32 ... photodetector, 13, 23, 33 ... amplifier, 14, 24, 34 ... comparator, 15, 25, 35 ... peak hold circuit,
16, 26, 36 ... A / D converter, 20 ... wavelength 81
0 nm laser, 30 filter, 40, 42 driver, 41 rotating stage, 43 R stage, 44 wafer fixing jig, 201 threshold, 301 defect detection by trigger of surface foreign matter detection detector Range, 302 ... 53
A defect detection range triggered by the scattered light detector at 2 nm, a defect detection range 303 triggered by the scattered light detector at 810 nm, 401 a defect in the surface layer, 402 a surface foreign matter, 403 a trace cursor for designating a minimum particle size;
404: Trace cursor for specifying the maximum particle size, 405
… Trace cursor for specifying the minimum depth position, 406…
Trace cursor to specify the maximum depth position.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Jin Komuro 882 Momo, Oaza-shi, Hitachinaka-shi, Ibaraki Prefecture Inside the Measurement Instruments Division of Hitachi, Ltd. (72) Inventor Kazuo Takeda 1-280 Higashi-Koigakubo, Kokubunji-shi, Tokyo Inside Central Research Laboratory, Hitachi, Ltd.

Claims (14)

[Claims] 1. A defect inspection apparatus for detecting a defect existing on a surface of a specimen and / or a specimen based on light information from the specimen obtained by irradiating the specimen with light, Detecting means for detecting the depth at which the defect exists, and the distribution of the defect, setting means for setting the depth at which the defect exists, and means for displaying information on the defect obtained by the detecting means. A defect inspection apparatus, wherein the display means displays information of a defect corresponding to the depth set by the setting means. 2. A defect inspection apparatus according to claim 1, wherein said display means has a function of identifying and displaying a defect corresponding to the depth set by said setting means from other defects. apparatus. 3. The defect inspection apparatus according to claim 1, wherein said display means has a function of displaying only a defect corresponding to a depth set by said setting means. 4. The display device according to claim 1, wherein the display unit has a function of displaying a graph using the depth of the defect and the number of defects existing at the depth as coordinate axes,
The defect inspection apparatus, wherein the setting means has a function of setting the depth on the graph. 5. The apparatus according to claim 1, wherein said detecting means has a function of detecting the size of said defect, said setting means has a function of setting the size of said defect, and said display means is said setting means. A defect corresponding to the depth and size of the defect set in the step (a). 6. The defect inspection apparatus according to claim 1, wherein the display device displays the number of defects corresponding to the depth of the defect set by the setting unit. 7. A defect inspection apparatus for detecting a defect present on a surface of a specimen and / or a specimen based on optical information from the specimen obtained by irradiating the specimen with light, wherein: Detecting means for detecting the size of the defect based on the defect, and information of the defect, means for setting the size of the defect, and means for displaying the defect information obtained by the detecting means, the display means A defect inspection apparatus for displaying defect information corresponding to the size set by the setting means. 8. The defect according to claim 7, wherein said displaying means has a function of distinguishing and displaying a defect corresponding to the size set by said setting means from other defects. Inspection equipment. 9. The defect inspection apparatus according to claim 7, wherein said displaying means has a function of displaying only a defect corresponding to the size set by said setting means. 10. The apparatus according to claim 7, wherein said displaying means has a function of displaying a graph using the size of the defect and the number of defects having the size as coordinate axes, and the setting means includes a function of displaying the graph. A defect inspection apparatus having a function of setting the size. 11. The defect inspection apparatus according to claim 7, wherein the display device displays the number of defects corresponding to the defect depth set by the setting means. 12. A defect inspection apparatus for detecting a defect present on a surface of a specimen and / or a specimen based on light information from the specimen obtained by irradiating the specimen with light, wherein: Means for detecting defect information for each predetermined unit area of the specimen, and display means for displaying the defect information for each unit area based on the defect information detected by the means. Defect inspection equipment. 13. The defect information according to claim 12, wherein the defect information includes the number of defects per unit area of the defect,
A defect inspection apparatus characterized in that the information is any one of a depth of existence of a defect, a maximum size of the defect, or a combination thereof. 14. A defect inspection system according to claim 12, wherein said display means has a function of identifying and displaying a defect existing on the surface of said sample and a defect existing in said sample. apparatus.