JP2001083066A - Scanning probe microscope - Google Patents
Scanning probe microscopeInfo
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- JP2001083066A JP2001083066A JP26047199A JP26047199A JP2001083066A JP 2001083066 A JP2001083066 A JP 2001083066A JP 26047199 A JP26047199 A JP 26047199A JP 26047199 A JP26047199 A JP 26047199A JP 2001083066 A JP2001083066 A JP 2001083066A
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- sample
- probe
- scanning probe
- probe microscope
- ions
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Abstract
Description
【０００１】[0001]
【発明の属する分野】本発明は元素分析機能を備えた走
査プローブ顕微鏡に関する。The present invention relates to a scanning probe microscope having an elemental analysis function.
【０００２】[0002]
【従来の技術】最近、探針付きカンチレバーと試料を接
近させて対向配置し、探針により試料表面を走査するこ
とにより、探針と試料間に働く原子間力，或いは磁気
力，或いは静電気力等を測定し、該測定に基づいて試料
表面の凹凸像を得るように成した走査プローブ顕微鏡
や、探針と試料を接近させて対向配置し、且つ探針と試
料間にバイアス電圧を印加し、探針により試料表面を走
査することにより、探針と試料間に流れるトンネル電流
を測定し、該測定に基づいて試料表面の凹凸象などを得
るように成した走査プローブ顕微鏡が注目されている。2. Description of the Related Art Recently, a cantilever with a probe and a sample are placed close to and opposed to each other, and the surface of the sample is scanned by the probe. And a scanning probe microscope configured to obtain an uneven image of the sample surface based on the measurement, a probe and a sample are arranged close to each other, and a bias voltage is applied between the probe and the sample. A scanning probe microscope, which measures a tunnel current flowing between a probe and a sample by scanning the surface of the sample with the probe, and obtains an uneven pattern on the sample surface based on the measurement, has attracted attention. .
【０００３】所で、この様な走査プローブ顕微鏡では、
試料表面の原子１個１個の観察が可能であるが、その原
子の同定が出来ない。In such a scanning probe microscope,
Although it is possible to observe individual atoms on the sample surface, the atoms cannot be identified.
【０００４】[0004]
【発明が解決しようとする課題】最近、走査プローブ顕
微鏡の１つである走査型トンネル顕微鏡に質量分析機能
を取り付け、所望の１個又は少数個の原子の元素同定を
可能にしたたものが提案されている（特開平８−６４１
７０号）。この提案では、試料表面の原子を一旦探針に
吸着させ、次に、試料を支持している試料ホルダーを取
り除き、該吸着させた原子を電界脱離させ、そのイオン
の飛行時間から質量分析し、元素を同定するようにして
いる。しかし、この様な提案では、試料ホルダーを走査
型トンネル顕微鏡から取り外す操作が必要であり、又、
試料ホルダーを取り外す為の機構が必要となる。又、試
料表面原子を一旦探針に吸着させるために、探針を形成
している材料の原子と該探針に吸着した原子とが化合物
を作ってしまい、目的とする試料の原子の質量分析が出
来ないことがある。Recently, a scanning probe microscope, which is one of the scanning probe microscopes, is provided with a mass spectrometry function to enable element identification of a desired one or a small number of atoms. (Japanese Patent Laid-Open No. 8-641)
No. 70). In this proposal, atoms on the sample surface are once adsorbed to the probe, then the sample holder supporting the sample is removed, the adsorbed atoms are desorbed by electric field, and mass analysis is performed based on the flight time of the ions. , To identify the element. However, such a proposal requires an operation of removing the sample holder from the scanning tunneling microscope, and
A mechanism for removing the sample holder is required. Further, since the sample surface atoms are once adsorbed on the probe, the atoms of the material forming the probe and the atoms adsorbed on the probe form a compound, and the mass spectrometry of the target sample atoms is performed. May not be possible.
【０００５】本発明は、この様な問題を解決する新規な
走査プローブ顕微鏡を提供することを目的としたもので
ある。An object of the present invention is to provide a novel scanning probe microscope which solves such a problem.
【０００６】[0006]
【課題を解決するための手段】 本発明の走査プローブ
顕微鏡は、探針と試料を接近させて対向配置し、探針と
試料との相対的位置を変化させ、試料表面の像情報を得
るように成した走査プローブ顕微鏡であって、探針と試
料間にバイアス電圧を印加した状態において試料にエネ
ルギーを与えて試料表面の原子をイオン化するように成
し、該イオンをイオン検出器に検出させるように成した
ことを特徴とする。Means for Solving the Problems A scanning probe microscope according to the present invention is arranged such that a probe and a sample are arranged close to and opposed to each other, the relative position between the probe and the sample is changed, and image information of the sample surface is obtained. A scanning probe microscope configured to apply energy to a sample in a state where a bias voltage is applied between the probe and the sample to ionize atoms on the sample surface, and to cause the ion detector to detect the ions. It is characterized by the following.
【０００７】本発明の走査プローブ顕微鏡は、探針と試
料を接近させて対向配置し、探針と試料との相対的位置
を変化させ、試料表面の像情報を得るように成した走査
プローブ顕微鏡であって、探針と試料間にバイアス電圧
を印加した状態において試料にエネルギーを与えて試料
表面の原子をイオン化するように成し、該イオンをイオ
ン検出器に検出させるように成しており、前記イオンが
探針に当たらないように探針を移動させるように成した
ことを特徴とする。A scanning probe microscope according to the present invention is a scanning probe microscope in which a probe and a sample are arranged close to and opposed to each other, the relative position between the probe and the sample is changed, and image information on the surface of the sample is obtained. In a state in which a bias voltage is applied between the probe and the sample, energy is applied to the sample to ionize atoms on the sample surface, and the ions are detected by an ion detector. The probe is moved so that the ions do not hit the probe.
【０００８】[0008]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【０００９】図１は本発明の一例として示した走査型ト
ンネル顕微鏡の如き走査プローブ顕微鏡の概略を示した
ものである。FIG. 1 schematically shows a scanning probe microscope such as a scanning tunnel microscope shown as an example of the present invention.
【００１０】図中１は探針、２は探針保持体、３は試
料、４はバイアス電源、５はスキャナー、６はＺ移動機
構、７はステージ、８は電流検出及び増幅回路、９は制
御装置、１０は表示装置である。尚、図の上下方向をＺ
軸方向とし、該Ｚ軸方向に直交する面をＸ−Ｙ平面とす
る。In the figure, 1 is a probe, 2 is a probe holder, 3 is a sample, 4 is a bias power supply, 5 is a scanner, 6 is a Z moving mechanism, 7 is a stage, 8 is a current detection and amplification circuit, 9 is The control device 10 is a display device. The vertical direction of the figure is Z
An axial direction, and a plane orthogonal to the Z-axis direction is an XY plane.
【００１１】前記スキャナー５はＸ，Ｙ及びＺ方向駆動
用の圧電素子から成り、前記探針１のＸ，Ｙ及びＺ軸方
向の位置を可変させるものであり、その位置の可変量は
前記制御装置９からの制御電圧によって制御される。前
記Ｚ移動機構６は前記探針１と圧電素子５を一体として
Ｚ軸方向の位置を可変させるもので、例えば、モータで
構成されており、その可変量は前記制御装置９からの制
御信号によって制御される。従って、制御装置９は、前
記探針１のＺ軸方向の位置を大きく変える場合には前記
Ｚ移動機構６を駆動し、微小量変える場合には前記スキ
ャナー５のＺ軸方向駆動用圧電素子を駆動する。The scanner 5 comprises piezoelectric elements for driving in the X, Y and Z directions, and varies the position of the probe 1 in the X, Y and Z directions. It is controlled by a control voltage from the device 9. The Z-movement mechanism 6 integrally changes the position of the probe 1 and the piezoelectric element 5 in the Z-axis direction, and is composed of, for example, a motor. The variable amount is controlled by a control signal from the control device 9. Controlled. Therefore, the control device 9 drives the Z moving mechanism 6 when the position of the probe 1 in the Z-axis direction is largely changed, and activates the Z-axis driving piezoelectric element of the scanner 5 when the position is changed by a very small amount. Drive.
【００１２】前記ステージ７はＸ，Ｙ方向駆動用のステ
ージから成り、前記制御装置９からの制御信号に基づい
て作動するモータ等から成る駆動機構（図示せず）によ
りそれぞれＸ，Ｙ方向に移動する。The stage 7 comprises a stage for driving in the X and Y directions, and is moved in the X and Y directions by a driving mechanism (not shown) comprising a motor or the like which operates based on a control signal from the control device 9. I do.
【００１３】前記電流検出及び増幅回路８は前記探針１
からのトンネル電流を検出し、増幅するもので、その出
力を前記制御装置９に送るものである。The current detection and amplification circuit 8 includes the probe 1
Detects and amplifies the tunnel current from the controller 9 and sends its output to the controller 9.
【００１４】図中１１は前記試料３にパルス電圧を印加
するためのパルス電源、１２は直流阻止用コンデンサ、
１３は前記試料１に高電圧を印加するための高電圧電源
である。In the figure, 11 is a pulse power supply for applying a pulse voltage to the sample 3, 12 is a DC blocking capacitor,
Reference numeral 13 denotes a high-voltage power supply for applying a high voltage to the sample 1.
【００１５】１４はイオン検出器で、試料表面からの蒸
発した原子をイオンとして検出するものである。１５は
電子タイマーで、該イオンが該イオン検出器に到着する
までの時間を測定するものである。Numeral 14 denotes an ion detector which detects atoms evaporated from the sample surface as ions. Reference numeral 15 denotes an electronic timer for measuring a time required for the ions to reach the ion detector.
【００１６】尚、前記探針１，探針保持体２、試料３，
スキャナー５、Ｚ移動機構６，ステージ７及びイオン検
出器１４は高真空チャンバー（図示せず）内に収容され
ており、バイアス電源４，電流検出及び増幅回路８，制
御装置９，表示装置１０，パルス電源１１，コンデンサ
１２，高電圧電源１３及び電子タイマー１５は高真空チ
ャンバー外に設けられている。The probe 1, probe holder 2, sample 3,
The scanner 5, the Z moving mechanism 6, the stage 7, and the ion detector 14 are housed in a high vacuum chamber (not shown), and include a bias power supply 4, a current detection and amplification circuit 8, a control device 9, a display device 10, The pulse power supply 11, the capacitor 12, the high voltage power supply 13, and the electronic timer 15 are provided outside the high vacuum chamber.
【００１７】この様な構成の走査プローブ顕微鏡の動作
を次に説明する。The operation of the scanning probe microscope having such a configuration will be described below.
【００１８】高真空チャンバー（図示せず）内を高真空
（例えば、１０-7Ｔｏｒｒ以下）に排気した状態で、既
に試料３がセットされているステージ７を移動させ、試
料３を所定の位置に持ってくる。そして、Ｚ移動機構６
及びスキャナー５のＺ方向駆動用の圧電素子により探針
１を試料３に数ｎｍ以下に近づける。その状態で、バイ
アス電源４から探針１，試料３間にバイアス電圧をか
け、スキャナー５のＸ，Ｙ方向駆動用の圧電素子により
探針１で試料上で二次元方向に走査する。該走査によ
り、探針１と試料３間に流れるトンネル電流を電流検出
及び増幅回路８により検出，増幅する。該増幅されたト
ンネル電流は制御装置９に送られる。制御装置９は、入
力されてくるトンネル電流信号と基準信号とを比較し、
その差に基づいて前記スキャナー５のＺ方向駆動用の圧
電素子５を制御する。その結果、探針１と試料の間の距
離は常に一定に保たれると共に、前記差に基づいた凹凸
の像が表示装置１０に表示される。この様にして、試料
表面の原子レベルでの観察が行われる。While the inside of the high vacuum chamber (not shown) is evacuated to a high vacuum (for example, 10 -7 Torr or less), the stage 7 on which the sample 3 is already set is moved, and the sample 3 is moved to a predetermined position. Bring to. And the Z moving mechanism 6
Further, the probe 1 is brought closer to the sample 3 to several nm or less by the piezoelectric element for driving the scanner 5 in the Z direction. In this state, a bias voltage is applied between the probe 1 and the sample 3 from the bias power supply 4 and the sample is scanned in the two-dimensional direction by the probe 1 by the piezoelectric element for driving the scanner 5 in the X and Y directions. By this scanning, a tunnel current flowing between the probe 1 and the sample 3 is detected and amplified by the current detection and amplification circuit 8. The amplified tunnel current is sent to the control device 9. The control device 9 compares the input tunnel current signal with the reference signal,
The piezoelectric element 5 for driving the scanner 5 in the Z direction is controlled based on the difference. As a result, the distance between the probe 1 and the sample is always kept constant, and an image of unevenness based on the difference is displayed on the display device 10. In this way, the observation of the sample surface at the atomic level is performed.
【００１９】この様な観察を行った後、前記スキャナー
５のＺ方向駆動用の圧電素子により探針１を、試料３に
対し、数ｎｍ〜数μｍの範囲で位置調整する。この状態
において、パルス電源１１と高電圧電源１３を作動させ
（オンの状態にし）、該パルス電源からのパルス電圧
（例えば、パルス幅が数ｎｓｅｃで、数Ｖ〜数ＫＶのパ
ルス電圧）の印加により探針１の先端と対向した試料３
表面の原子を電界蒸発させる。この時、試料３にはバイ
アス電圧と高電圧電源１３からの正の高電圧（例えば、
数ＫＶ〜１０ＫＶ程度の高電圧）が加算された電圧が印
加されているので、前記試料表面から電界蒸発した原子
の内、正イオン化したものはイオン検出器１４方向に加
速され、イオン検出器１４に到達する。この際、前記パ
ルス電源１１からパルス電圧が試料３に印加されると同
時に、該パルス電圧に対応した電圧信号が電子タイマー
１５に送られており、この電圧信号により電子タイマー
は計時をスタートする。又、該電子タイマーは、前記イ
オン検出器１４がイオンを検出すると、該検出したこと
を表す信号によって計時をストップし、前記計時スター
ト時とストップ時の時間差をイオンの飛行時間として算
出して、前記制御装置９に送る。After such observation, the position of the probe 1 with respect to the sample 3 is adjusted within a range of several nm to several μm by the piezoelectric element for driving the scanner 5 in the Z direction. In this state, the pulse power supply 11 and the high-voltage power supply 13 are operated (turned on), and a pulse voltage (for example, a pulse voltage of several volts to several KV with a pulse width of several nsec) is applied from the pulse power supply. Sample 3 facing the tip of probe 1
Field atoms are field evaporated. At this time, a bias voltage and a positive high voltage (for example,
Since a voltage to which a high voltage of about several KV to 10 KV is added is applied, of the atoms that have been field-evaporated from the sample surface, those that have become positively ionized are accelerated in the direction of the ion detector 14, and To reach. At this time, the pulse voltage is applied to the sample 3 from the pulse power supply 11 and at the same time, a voltage signal corresponding to the pulse voltage is sent to the electronic timer 15, and the electronic timer starts timing by this voltage signal. Further, when the ion detector 14 detects ions, the electronic timer stops timekeeping by a signal indicating the detection, and calculates a time difference between the time start time and the stop time as a flight time of the ions, It is sent to the control device 9.
【００２０】該制御装置は、例えば、キーボード等の入
力装置（図示せず）から、予め、比例定数Ｃ、試料から
イオン検出器までの距離Ｄが与えられており、前記高電
圧源１３からの高電圧に対応した電圧信号Ｖと、イオン
検出器に検出されたイオンの飛行時間ｔが送られて来る
ので、式（１）に基づいて、検出されたイオンの原子の
質量を求めて、その原子の元素を同定する。尚、ｍは該
原子の質量、ｎはイオン価数である。The control device is provided with a proportional constant C and a distance D from the sample to the ion detector in advance from an input device (not shown) such as a keyboard. Since the voltage signal V corresponding to the high voltage and the flight time t of the detected ion are sent to the ion detector, the mass of the detected ion atom is calculated based on the equation (1). Identify the element of the atom. Here, m is the mass of the atom, and n is the ionic valence.
【００２１】[0021]
【数１】 さて、この様な装置において、試料３と探針１との間の
距離が極めて短い為に、試料３から電界蒸発したイオン
化原子の飛行を探針１が妨げたり、探針自体に吸着して
しまう現象が発生する。そこで、この様な現象の発生を
妨げるために、前記パルス電源１１の作動開始と共に、
探針１を試料表面から退避させるように成している。例
えば、パルス電源作動により最初に試料３に印加された
パルス電圧に対応した電圧信号が制御装置９に送られる
ようになっており、該制御装置はこの様な電圧信号を受
け取ると、前記スキャナー５のＺ方向駆動用の圧電素子
を制御して、探針１を試料３から離れるように移動させ
る。この移動距離は、試料からの原子の飛行を妨げた
り、付着させたりしない距離であればよい。(Equation 1) By the way, in such an apparatus, since the distance between the sample 3 and the probe 1 is extremely short, the probe 1 hinders the flight of the ionized atoms field-evaporated from the sample 3 or adsorbs on the probe itself. Phenomenon occurs. Therefore, in order to prevent the occurrence of such a phenomenon, the operation of the pulse power supply 11 is started,
The probe 1 is retracted from the sample surface. For example, a voltage signal corresponding to a pulse voltage initially applied to the sample 3 by a pulse power supply operation is sent to the control device 9. When the control device receives such a voltage signal, the control device 9 receives the voltage signal. Is controlled to move the probe 1 away from the sample 3. The moving distance may be any distance that does not hinder or attach the flight of atoms from the sample.
【００２２】尚、探針１を前記Ｚ移動機構６で退避させ
ても良い。又、パルス電源１１の作動と同時に探針１を
退避させるようにしても良い。又、Ｚ方向ではなく、
Ｘ，Ｙ方向駆動用の圧電素子を制御して、探針１をイオ
ン検出器１４方向ではない方向に探針１を移動させるよ
うにしても良し、Ｚ方向及びＸ，Ｙ方向に移動させるよ
うにしても良い。The probe 1 may be retracted by the Z moving mechanism 6. Further, the probe 1 may be retracted simultaneously with the operation of the pulse power supply 11. Also, instead of the Z direction,
The probe 1 may be moved in a direction other than the direction of the ion detector 14 by controlling the piezoelectric element for driving in the X and Y directions, or the probe 1 may be moved in the Z direction and the X and Y directions. You may do it.
【００２３】尚、図２は図１の一部である試料３とイオ
ン検出器１４及びそれらの空間部を示したものである
が、図に示す様に、試料３とイオン検出器１４の間に、
例えば、円錐台形状の引出電極１６を配置し、この電極
に高電圧電源１７から負の高電圧を印加し、試料３の表
面からの原子を引き出し易くしても良い。FIG. 2 shows the sample 3 and the ion detector 14 which are a part of FIG. 1, and their spaces. As shown in FIG. To
For example, an extraction electrode 16 having a truncated cone shape may be arranged, and a negative high voltage may be applied to this electrode from a high voltage power supply 17 to facilitate extraction of atoms from the surface of the sample 3.
【００２４】又、図３は本発明の他の例を示した走査型
トンネル顕微鏡の如き走査プローブ顕微鏡の概略図で、
図中１で使用した記号と同一記号の付されたものは同一
構成要素である。FIG. 3 is a schematic diagram of a scanning probe microscope such as a scanning tunnel microscope showing another embodiment of the present invention.
In the figure, components having the same symbols as those used in 1 are the same components.
【００２５】図１では、試料３側に高電圧電源１３から
正の高電圧を印加しているが、この例では、高電圧電源
１８からイオン検出器１４に負の高電圧を印加し、該イ
オン検出器１４がイオンを検出した時に、イオンを検出
したことを表す信号を直流阻止用コンデンサ１９を介し
て電子タイマー１５に送るように成している。In FIG. 1, a positive high voltage is applied from the high voltage power supply 13 to the sample 3 side. In this example, a negative high voltage is applied from the high voltage power supply 18 to the ion detector 14, and When the ion detector 14 detects an ion, a signal indicating that the ion has been detected is sent to the electronic timer 15 via the DC blocking capacitor 19.
【００２６】又、前記例では試料にパルス電圧を印加す
る事により試料表面から原子を電界蒸発させたが、パル
ス電源に代えてパルスレーザ源を設け、パルス電圧の印
加に代えて試料にパルスレーザービームを照射して試料
表面から原子を電界蒸発させる様にしても良い。Also, in the above example, atoms were subjected to electric field evaporation from the sample surface by applying a pulse voltage to the sample, but a pulse laser source was provided instead of the pulse power source, and the pulse laser was applied to the sample instead of applying the pulse voltage. Irradiation with a beam may be used to cause the field to evaporate atoms from the sample surface.
【００２７】又、前記例のトンネル顕微鏡用の探針に代
えて、先端に探針が付いているカンチレバーを探針保持
体に取り付けるようにしても良い。本発明によれば、試
料ホルダーを走査型トンネル顕微鏡から取り外す機構を
備える必要がなく、同時にその様な取り外し作業が不要
となる。又、試料表面から直接電界蒸発させた原子をイ
オンとして検出しているので、試料表面からの原子を一
旦探針に吸着させることがなく、その為、探針を形成し
ている材料の原子と該探針に吸着した原子とが化合する
ということがない。更に、試料表面から原子が電界蒸発
され始める際、探針を試料表面から退避させるので、試
料表面から電界蒸発した原子を、イオンとして効率よく
イオン検出器に検出させることが出来る。In place of the probe for a tunnel microscope in the above example, a cantilever having a probe at the tip may be attached to the probe holder. According to the present invention, there is no need to provide a mechanism for removing the sample holder from the scanning tunneling microscope, and at the same time, such a removal operation is not required. In addition, since the atoms that have been field-evaporated directly from the sample surface are detected as ions, the atoms from the sample surface are not once adsorbed to the probe, and therefore, the atoms of the material forming the probe are not The atoms adsorbed on the probe do not combine. Furthermore, since the probe is retracted from the surface of the sample when the atoms begin to evaporate from the surface of the sample, the atoms that have been evaporated from the surface of the sample can be efficiently detected as ions by the ion detector.
【図１】 本発明の一例として示した走査型トンネル顕
微鏡の如き走査プローブ顕微鏡の概略を示したものであ
る。FIG. 1 schematically shows a scanning probe microscope such as a scanning tunnel microscope shown as an example of the present invention.
【図２】 図１の一部である試料３とイオン検出器１４
及びそれらの空間部を示したものである。FIG. 2 shows a sample 3 and an ion detector 14 which are part of FIG.
And their spaces.
【図３】 本発明の他の例を示した走査型トンネル顕微
鏡の如き走査プローブ顕微鏡の概略図である。FIG. 3 is a schematic view of a scanning probe microscope such as a scanning tunnel microscope showing another example of the present invention.
１…探針 ２…探針保持体 ３…試料 ４…バイアス電源 ５…スキャナー ６…Ｚ移動機構 ７…ステージ ８…電流検出及び増幅回路 ９…制御装置 １０…表示装置 １１…パルス電源 １２，１９…直流阻止用コンデンサ １３，１７，１８…高電圧電源 １４…イオン検出器 １５…電子タイマー １６…引出電極 DESCRIPTION OF SYMBOLS 1 ... Probe 2 ... Probe holder 3 ... Sample 4 ... Bias power supply 5 ... Scanner 6 ... Z movement mechanism 7 ... Stage 8 ... Current detection and amplification circuit 9 ... Control device 10 ... Display device 11 ... Pulse power supply 12, 19 ... DC blocking capacitors 13,17,18 ... High voltage power supply 14 ... Ion detector 15 ... Electronic timer 16 ... Extraction electrode
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｊ 37/28 Ｈ０１Ｊ 37/28 Ｆターム(参考） 2F063 AA43 AA50 CA40 DA01 DB05 DD03 EA16 EB21 EB23 FA07 JA10 PA04 ZA01 2F065 AA00 AA49 GG04 HH04 HH12 JJ03 MM02 MM07 PP02 PP12 2F069 AA60 AA99 DD25 GG04 GG06 GG07 GG08 GG31 GG59 GG63 HH02 HH30 JJ06 JJ14 KK10 LL03 LL04 MM24 MM32 MM34 5C001 AA01 AA03 CC04 Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat II (Reference) H01J 37/28 H01J 37/28 F term (Reference) 2F063 AA43 AA50 CA40 DA01 DB05 DD03 EA16 EB21 EB23 FA07 JA10 PA04 ZA01 2F065 AA00 AA49 GG04 HH04 HH12 JJ03 MM02 MM07 PP02 PP12 2F069 AA60 AA99 DD25 GG04 GG06 GG07 GG08 GG31 GG59 GG63 HH02 HH30 JJ06 JJ14 KK10 LL03 LL04 MM24 MM32 MM34 5C001 AA01 AA03 CC04
Claims (12)
針と試料との相対的位置を変化させ、試料表面の像情報
を得るように成した走査プローブ顕微鏡であって、探針
と試料間にバイアス電圧を印加した状態において試料に
エネルギーを与えて試料表面の原子をイオン化するよう
に成し、該イオンをイオン検出器に検出させるように成
した走査プローブ顕微鏡。1. A scanning probe microscope in which a probe and a sample are arranged close to each other and opposed to each other, and the relative position between the probe and the sample is changed to obtain image information on the surface of the sample. A scanning probe microscope configured to apply energy to the sample in a state where a bias voltage is applied between the sample and the sample to ionize atoms on the surface of the sample and to cause the ion detector to detect the ions.
針と試料との相対的位置を変化させ、試料表面の像情報
を得るように成した走査プローブ顕微鏡であって、探針
と試料間にバイアス電圧を印加した状態において試料に
エネルギーを与えて試料表面の原子をイオン化するよう
に成し、該イオンをイオン検出器に検出させるように成
しており、前記イオンが探針に当たらないように探針を
移動させるように成した走査プローブ顕微鏡。2. A scanning probe microscope wherein a probe and a sample are arranged close to each other and opposed to each other, and a relative position between the probe and the sample is changed to obtain image information on the surface of the sample. In a state where a bias voltage is applied between the sample and the sample, energy is given to the sample to ionize atoms on the surface of the sample, and the ions are detected by an ion detector. A scanning probe microscope configured to move the probe so as not to hit the surface.
せるように成した請求項１，２に記載の走査プローブ顕
微鏡。3. The scanning probe microscope according to claim 1, wherein ions are accelerated and detected by an ion detector.
るように成した請求項３に記載の走査プローブ顕微鏡。4. The scanning probe microscope according to claim 3, wherein a high voltage is applied to the sample to accelerate the ions.
を加速するように成した請求項３に記載の走査プローブ
顕微鏡5. The scanning probe microscope according to claim 3, wherein a high voltage is applied to the ion detector to accelerate the ions.
試料にエネルギーを与えるように成した請求項１，２に
記載の走査プローブ顕微鏡。6. The scanning probe microscope according to claim 1, wherein energy is applied to the sample by applying a pulse voltage to the sample.
ことにより試料にエネルギーを与えるように成した試料
請求項１，２に記載の走査プローブ顕微鏡。7. The scanning probe microscope according to claim 1, wherein the sample is irradiated with a pulsed laser beam to apply energy to the sample.
来るイオンの極性と逆の極性の高電圧が印加された引出
電極を配置した請求項１〜５に記載の走査プローブ顕微
鏡。8. The scanning probe microscope according to claim 1, wherein an extraction electrode to which a high voltage having a polarity opposite to that of ions accelerated is applied is arranged between the sample and the ion detector.
てそのイオンの質量を分析し、元素同定するように成し
た前記請求項１，２に記載の走査プローブ顕微鏡。9. The scanning probe microscope according to claim 1, wherein the mass of the detected ion is analyzed based on the time of flight of the detected ion to identify the element.
探針を移動させるように成した１，２に記載の走査プロ
ーブ顕微鏡。10. Applying energy to the sample,
2. The scanning probe microscope according to 1 or 2, wherein the probe is moved.
号により探針を移動させるように成した１，２，６に記
載の走査プローブ顕微鏡。11. The scanning probe microscope according to claim 1, wherein the probe is moved by a signal corresponding to a pulse voltage applied to the sample.
対応した信号により探針を移動させるように成した１，
２，７に記載の走査プローブ顕微鏡。12. A method according to claim 1, wherein the probe is moved by a signal corresponding to a pulsed laser beam applied to the sample.
The scanning probe microscope according to any one of claims 2 and 7.
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|---|---|---|---|
| JP26047199A JP3942320B2 (en) | 1999-09-14 | 1999-09-14 | Scanning probe microscope and operation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26047199A JP3942320B2 (en) | 1999-09-14 | 1999-09-14 | Scanning probe microscope and operation method thereof |
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| Publication Number | Publication Date |
|---|---|
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Citations (5)
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|---|---|---|---|---|
| JPH01287404A (en) * | 1988-05-13 | 1989-11-20 | Shimadzu Corp | Composite analyzing device for surface of solid body |
| JPH06124680A (en) * | 1992-10-12 | 1994-05-06 | Jeol Ltd | Mass spectrometer for secondary neutral particle |
| JPH0727771A (en) * | 1993-07-09 | 1995-01-31 | Hitachi Ltd | Scanning probe microscope |
| JPH0864170A (en) * | 1994-08-19 | 1996-03-08 | Res Dev Corp Of Japan | Extra fine region surface analyzing method and device therefor |
| JPH0894646A (en) * | 1994-09-22 | 1996-04-12 | Shimadzu Corp | Surface analyzer |
-
1999
- 1999-09-14 JP JP26047199A patent/JP3942320B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01287404A (en) * | 1988-05-13 | 1989-11-20 | Shimadzu Corp | Composite analyzing device for surface of solid body |
| JPH06124680A (en) * | 1992-10-12 | 1994-05-06 | Jeol Ltd | Mass spectrometer for secondary neutral particle |
| JPH0727771A (en) * | 1993-07-09 | 1995-01-31 | Hitachi Ltd | Scanning probe microscope |
| JPH0864170A (en) * | 1994-08-19 | 1996-03-08 | Res Dev Corp Of Japan | Extra fine region surface analyzing method and device therefor |
| JPH0894646A (en) * | 1994-09-22 | 1996-04-12 | Shimadzu Corp | Surface analyzer |
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|---|---|
| JP3942320B2 (en) | 2007-07-11 |
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