JP2001077184A - Electrostatic attraction device and vacuum processing device using the attraction device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electrostatic attraction device which can be for substrates having various outer diameters, without causing dusts or deterioration of an electrostatic attracting chuck main body. SOLUTION: In this electrostatic attraction device arranged so as to attract and hold substrates 8A, 8B and 8C on an electrostatic chuck plate 20 by electrostatic attraction, a plurality of attraction projections 31A to 31C are provided concentrically with prescribed intervals on the chuck plate 20. Furthermore, exposed one or ones among the attraction projections 31A to 31C due to different sizes of substrates are arranged to be covered with attraction preventing plates 40 (40A, 40B).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an electrostatic attraction device for attracting and holding a substrate by an electrostatic attraction force, and a vacuum processing apparatus having the same.

[0002]

2. Description of the Related Art Generally, in a process of forming a thin film on a substrate by a CVD method or a sputtering method, an electrostatic chuck is used as a means for holding the substrate in a vacuum processing tank.

As shown in FIG. 6A, a conventional electrostatic attraction device 100 has, for example, an electrostatic chuck body 101 having substantially the same shape and size as a substrate 102, and the substrate is subjected to electrostatic attraction force. It is configured to hold the chuck 102 on the electrostatic chuck body 101.

In recent years, as the diameter of a substrate has been increased, a vacuum processing apparatus has been specialized according to the size of the substrate, and accordingly, an electrostatic chuck specialized for each substrate size has been used. .

[0005]

By the way, in the diversifying equipment specifications, there is a demand for a vacuum processing apparatus which can cope with various processes in one apparatus and can also be used for substrates of different sizes. .

In order to share substrates of different sizes, it is conceivable to use an electrostatic chuck corresponding to the size of each substrate, but in the case of a conventional vacuum processing apparatus, it is necessary to use an electrostatic chuck. Due to restrictions, the stage structure had to be changed to replace the electrostatic chuck, and only the electrostatic chuck could not be replaced.

On the other hand, in a conventional vacuum processing apparatus,
When the electrostatic chuck is used for a substrate having several kinds of apertures, the following problem occurs. That is, FIG.
As shown in (b), when the outer diameter of the electrostatic chuck main body 101 is larger than the diameter of the substrate 102, in the thin film forming step, the electrostatic chuck main body 101 is cut from the edge of the substrate 102.
The thin film 103 is continuously formed over the exposed portion of the substrate, and the thin film 103 is scattered as dust, and the dust is sandwiched between the substrate 102 and the electrostatic chuck main body 101 that are repeatedly transported, so that the electrostatic chuck is performed. Apparatus 10
However, there is a problem that the heat transfer capability to the substrate 102 of No. 0 is reduced.

In the structure of the prior art, the portion of the electrostatic chuck main body 101 protruding from the substrate 102 may be deteriorated by being exposed to plasma or reactive gas.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art, and it is an object of the present invention to provide various external devices without causing problems such as dust and deterioration of the electrostatic chuck body. An object of the present invention is to provide an electrostatic attraction device that can be used for a substrate having a large diameter.

[0010]

According to a first aspect of the present invention, there is provided an electrostatic attraction device configured to attract and hold a substrate to an electrostatic chuck body by an electrostatic attraction force. Wherein a plurality of suction protrusions are provided concentrically at predetermined intervals on the electrostatic chuck body.

According to the first aspect of the present invention, since a plurality of suction protrusions are provided concentrically at predetermined intervals on the electrostatic chuck body, the substrate is placed on the suction protrusions. In this case, the edge of the substrate can be separated from the surface of the electrostatic chuck body.

As a result, according to the present invention, a thin film is not formed continuously from the edge of the substrate to the surface of the main body of the electrostatic chuck, particularly during film formation, so that dust is not generated. It is possible to obtain an electrostatic suction device that can be used for substrates of various sizes.

On the other hand, since the surface of the electrostatic chuck main body is covered by the substrate and the wall of the suction protrusion, a film-forming material or plasma does not enter between the substrate and the electrostatic chuck main body. .

Further, according to the present invention, since the contact area between the electrostatic chuck main body and the substrate is reduced, the residual charge of the electrostatic chuck main body at a low temperature can be reduced. The substrate can be easily removed.

In this case, as in the second aspect of the present invention,
According to the first aspect of the present invention, it is also effective to provide a shielding member that is formed in a shape that covers the exposed suction protrusion among the suction protrusions, and that is configured to be detachably attached to the electrostatic chuck body.

According to the second aspect of the present invention, when a substrate smaller than the electrostatic chuck main body is sucked and held, the entire surface of the electrostatic chuck main body can be covered, so that generation of dust can be more reliably prevented. As a result, the deterioration of the electrostatic chuck main body due to plasma, reaction gas or the like can be surely prevented.

Further, as in the third aspect of the present invention, in the second aspect of the present invention, the heating and cooling means capable of controlling the temperature to a predetermined temperature may be integrally provided in the electrostatic chuck body. It is effective.

According to the third aspect of the present invention, in a vacuum processing apparatus that performs heating and cooling, generation of dust and deterioration of the electrostatic chuck main body due to plasma, reaction gas, and the like can be reliably prevented.

Further, as in the invention according to the fourth aspect, in the invention according to any one of the first to third aspects, a gas introduction for introducing a gas for controlling the substrate temperature to the bottom surface of the concave portion of the electrostatic chuck body. It is also effective that a mouth is provided.

According to the fourth aspect of the present invention, a gas for controlling the temperature of the substrate is filled in a sealed space surrounded by the substrate, the bottom surface of the concave portion of the electrostatic chuck main body, and the suction protrusion, so that the electrostatic chuck is The process can be performed without reducing the heat transfer ability from the main body to the substrate.

Furthermore, as in the invention according to claim 5, in the invention according to any one of claims 1 to 4, the bipolar chuck having the first and second electrodes on the electrostatic chuck main body. It is also effective that the electrodes are provided and the suction protrusions are provided evenly for each of the first and second electrodes.

According to the fifth aspect of the present invention, in an apparatus using a bipolar electrostatic chuck, the substrate can be uniformly sucked and held, and the electrostatic chuck is generated by dust generation and plasma or reaction gas. The deterioration of the main body can be reliably prevented.

On the other hand, according to a sixth aspect of the present invention, the electrostatic attraction device according to any one of the first to fifth aspects is disposed in a vacuum processing tank, and is held by the electrostatic attraction device. A vacuum processing apparatus configured to perform a predetermined process on a substrate.

According to the sixth aspect of the present invention, it is possible to obtain a vacuum processing apparatus equipped with an electrostatic suction device that can be used for substrates of various sizes.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 1 is a diagram showing a schematic configuration of a sputtering apparatus which is an embodiment of a vacuum processing apparatus according to the present invention. FIG. 2A is a plan view illustrating a schematic configuration of the electrostatic chuck according to the present embodiment, FIG. 2B is a schematic cross-sectional configuration diagram of the electrostatic chuck, and FIG. It is an enlarged view of the part shown by the one-dot chain line of b). 3 (a) to 3 (c)
FIG. 3 is a schematic cross-sectional configuration diagram showing a state where substrates having different outer diameters are attracted to the electrostatic chuck.

As shown in FIG. 1, a sputtering apparatus 1 according to the present embodiment has a vacuum processing tank 2 connected to a vacuum evacuation system (not shown). 3 are provided. The target 3 is connected to a DC power supply 4 provided outside the vacuum processing tank 2 and configured to be applied with a negative voltage.

A gas cylinder 5 is provided outside the vacuum processing tank 2, and the gas cylinder 5 is connected to the vacuum processing tank 2 and supplies an inert gas such as argon gas to the vacuum processing tank 2.
It is configured to be introduced.

A susceptor 6 is provided below the vacuum processing tank 2 so as to face the target 3. The susceptor 6 has an electrostatic chuck 10 for holding a substrate 8 such as a silicon wafer by suction. Has been fixed. Further, in the present embodiment, the substrate 8 is carried into the vacuum processing tank 2 by the carrying arm 7 and the substrate 8 is placed on the electrostatic chuck 10.

As shown in FIGS. 1 and 3 (a) to 3 (c), the electrostatic chuck 10 of the present embodiment includes an electrostatic chuck plate (electrostatic chuck body) 20 and an adhesion preventing plate ( 40), and three types of diameters d1 (4 inches), d2 (6 inches), d
The substrate 8 (8A, 8B, 8C) having 3 (8 inches) can be sucked and held.

As shown in FIG. 1, the electrostatic chuck plate 20 has a disk-shaped main body 21 made of a dielectric material such as a ceramic material.
A heater 22 for heating the substrate 8 is provided inside 1. The heater 22 is connected to a power supply (not shown) and is configured to be controllable at a predetermined temperature.

In the main body 21 of the electrostatic chuck plate 20, the electrostatic chuck plate 20 is configured to be cooled by circulating a cooling medium such as water (not shown). The electric chuck 10 has a function as a heating / cooling device (hot plate).

In the main body 21 of the electrostatic chuck plate 20, a so-called bipolar electrode is provided with a positive electrode 23 charged to a positive polarity and a negative electrode 24 charged to a negative polarity. Here, the positive electrode 23 is connected to a positive terminal of a DC power supply 25 provided outside the vacuum processing tank 2,
On the other hand, the negative electrode 24 is similarly connected to the negative terminal of the DC power supply 26.

As shown in FIGS. 2A and 2B, on the surface of the electrostatic chuck plate 20, three cylindrical suction projections 31 having a predetermined height and thickness are formed concentrically. 31
A, 31B, 31C). As shown in FIG. 2B and FIGS. 3A to 3C, these suction projections 31
A, 31B and 31C have outer diameters D1, D2 and D3 (D
1 <D2 <D3) correspond to the 4-inch substrates 8A and 6
Diameters d1 and d2 of the inch substrates 8B and 8C,
It is set to be slightly smaller than d3 (for example, about 1 mm). Hereinafter, in this specification, 4 inches of suction protrusions 31A, 6 inches of suction protrusions 31B,
It is referred to as an 8-inch suction protrusion 31C.

In this specification, the electrostatic chuck plate 20 surrounded by the 4-inch suction protrusion 31A is used.
The surfaces of the concave bottom surface 51, 4 inch suction protrusions 31A and 6
The surface of the electrostatic chuck plate 20 surrounded by the inch suction protrusions 31B is formed with a concave bottom surface 52 and a 6-inch suction protrusion 3.
The surface of the electrostatic chuck plate 20 surrounded by the 1B and 8 inch suction protrusions 31C is referred to as a concave bottom surface 53.

In the case of the present embodiment, as shown in FIG. 2B, the 8-inch suction protrusion 31C is provided at the edge of the electrostatic chuck plate 20, and its outer surface is formed on the side surface of the electrostatic chuck plate 20. It is formed so as to be the same (smooth).

On the other hand, as shown in FIGS. 2A and 2B, the deposition-inhibiting plate (shielding member) 40 is made of ceramics such as aluminum oxide, and has a predetermined width.
It is formed in a ring shape.

Here, in the present embodiment, FIG.
(A) As shown in FIG.
A deposition plate 40A for a 4-inch substrate and a deposition plate 40B for a 6-inch substrate are used.

As shown in FIGS. 2 (b) and 2 (c), the width W3 of the lower surface 62 of the main body portion 41B of the deposition-preventing plate 40B is such that the 6-inch suction protrusion 31B and the 8-inch suction protrusion 3B are not formed.
It is set so as to be slightly smaller than the interval between the opposed wall surfaces 61B and 61C of 1C.

Further, the attachment-preventing plate 40B is provided with a thin-walled attachment-proof roof portion 42B extending radially outward at an outer edge portion on the upper surface 63 side of the main body portion 41B. The lower part 62 of the main body part 41B
A flange-like eave portion 43B extending to the side is formed.

Here, in the present embodiment, the outer diameter E3 of the eaves 43B is set to be larger than the outer diameter D3 of the 8-inch suction projection 31C, and the inner edge 66 of the eaves 43B is in contact with the eaves 43B. The distance V3 from the peripheral side surface 64 of the main body 41B is set to be larger than the thickness of the 8-inch suction protrusion 31C.

The inner edge of the main body 41B of the attachment-preventing plate 40B on the side of the upper surface 63 is cut out in a stepped manner. And the diameter F3 of the inner wall portion 65 of this cut-out portion is
Allowance B (1 mm or less) from the diameter d2 of the 6-inch substrate 8B
Is set to be larger only.

On the other hand, as shown in FIG. 3 (a), the width of the lower surface 62 of the main body 41A of the deposition plate 40A for a 4-inch substrate is such that the width W2 of the 4-inch suction projection 31A and the 6-inch suction projection 31A. It is set so as to be slightly smaller than the distance between the opposing wall surfaces 71A and 71B of 31B.

Further, the attachment-preventing plate 40A is provided with a thin-walled attachment-preventing roof portion 42A extending outward in the radial direction at an outer edge portion on the upper surface 73 side of the main body portion 41A.
The lower edge 7 of the main body 41A is provided on the outer edge of the roof 42A.
A flange-like eave portion 43A extending to two sides is formed.

Here, in the deposition-preventing plate 40A,
The outer diameter E2 of the eaves 43A is 8 inches suction protrusion 31C.
Is set to be larger than the outer diameter D3 of
Inner edge portion 76 of eave portion 43A and peripheral side surface 7 of main body portion 41A
4 is set to be larger than the distance across the 6-inch suction protrusion 31B and the 8-inch suction protrusion 31C.

Further, similarly to the protection plate 40B shown in FIGS. 2B and 2C, the main body 4 of the protection plate 40A is formed.
1A, the inner edge on the upper surface 73 side is cut out in a step shape,
The diameter F2 of the notched portion of the inner wall portion 75 is set to be larger than the diameter d1 of the 4-inch substrate 8A by a play A (1 mm or less).

In the present embodiment having such a configuration, when forming a thin film on the 6-inch substrate 8B, first, the electrostatic chuck plate 20 heated to a predetermined temperature is used.
Then, an attachment-preventing plate 40B for a 6-inch substrate is attached.

In this state, the electrostatic chuck plate 20
While almost the entire outer surface of the main body 21 and the 8-inch suction protrusion 31C are covered by the deposition-inhibiting plate 40B,
The 4-inch suction protrusion 31A and the 6-inch suction protrusion 31B are exposed. Next, the 6-inch substrate 8B is carried into the vacuum processing tank 2 by the transfer arm 7, and the 4-inch suction protrusion 3
It is placed on the 1A and 6 inch suction protrusions 31B.

Then, the DC power supplies 25 and 26 are turned on, and a predetermined voltage is applied to the positive electrode 23 and the negative electrode 24 to generate an electrostatic attraction force on the attraction protrusion 31. As a result, the 6-inch substrate 8B is removed. The upper surfaces 80A and 80B of the 4-inch suction protrusion 31A and the 6-inch suction protrusion 31B are suction-held.

Thereafter, a sputtering gas is introduced into the vacuum processing tank 2 with a negative voltage applied to the target 3. As a result, plasma is generated between the target 3 and the 6-inch substrate 8B, collides with the target 3, and sputtered particles are emitted from the target 3, resulting in the generation of the plasma.
A thin film is formed on the inch substrate 8B.

In this case, in the present embodiment, the area inside the 6-inch suction protrusion 31B on the electrostatic chuck plate 20 is covered by the 6-inch substrate 8B and the 6-inch suction protrusion 31B. Therefore, the sputtered particles do not adhere to the concave bottom surfaces 51, 52 of the electrostatic chuck plate 20, and the concave bottom surfaces 51, 52 are not exposed to plasma.

Since almost the entire area of the bottom surface 53 of the concave portion of the electrostatic chuck plate 20 and the 8-inch suction protrusion 31C are covered by the deposition-inhibiting plate 40B, spatter particles do not adhere to this portion. This part is not exposed to the plasma.

Further, even if sputtered particles or the like enter through the gap B between the 6-inch substrate 8B and the deposition-preventing plate 40B, they are blocked by the main body 41B of the deposition-preventing plate 40B.
Sputtered particles and the like do not reach the concave bottom surface 53 of the electrostatic chuck plate 20.

On the other hand, when a thin film is to be formed on the 4-inch substrate 8A, as shown in FIG. 3A, a deposition plate 40A for the 4-inch substrate is mounted on the electrostatic chuck plate 20. Then, as in the case of the 6-inch substrate 8B,
A thin film is formed on the 4-inch substrate 8A in a state where the 4-inch substrate 8A is sucked and held on the 4-inch suction protrusion 31A.

In this case, the area inside the 4-inch suction protrusion 31A on the electrostatic chuck plate 20 is covered by the 4-inch substrate 8A and the 4-inch suction protrusion 31A. Since the area outside the 4 inch suction protrusion 31A is covered by the same deposition-preventing plate 40A as described above, the concave bottom surfaces 51 to 53 of the electrostatic chuck plate 20 and the 6 inch suction protrusion 3
Sputtered particles do not adhere to the 1B and 8 inch suction protrusions 31C, and this portion is not exposed to plasma.

On the other hand, when a thin film is formed on the 8-inch substrate 8C, as shown in FIG.
And the 6-inch substrate 8B,
The 8-inch substrate 8C is placed on the electrostatic chuck plate 20 without using 0.

Then, a thin film is formed on the 8-inch substrate 8C in a state where the 8-inch substrate 8C is sucked and held on all the suction protrusions 31. In this case, the electrostatic chuck plate 2
0 itself is the diameter d3 of the 8-inch substrate 8C.
Therefore, all the suction protrusions 31 and the concave surfaces 51 to 53 of the electrostatic chuck plate 20 are covered by the 8-inch substrate 8C, so that sputter particles do not adhere to this portion, and this portion is No exposure to plasma.

As described above, according to the present embodiment,
The three suction protrusions 31 </ b> A to 31 </ b> A
Since the substrates 31C are provided concentrically at predetermined intervals, when the substrate 8 is placed on the suction protrusions 31A to 31C, the edge of the substrate 8 is moved to the concave bottom surface 51 of the electrostatic chuck plate 20. ~ 53.

As a result, according to the present embodiment, a thin film is not formed continuously from the edge of the substrate 8 to the surface of the electrostatic chuck plate 20 particularly during film formation, thereby generating dust. Therefore, it is possible to obtain an electrostatic attraction device that can also be used for substrates 8 of various sizes.

On the other hand, the substrate 8 and the suction protrusions 31A to 31A
Since the concave bottom surfaces 51 to 53 of the electrostatic chuck plate 20 are covered by the wall surfaces 61B, 61C, 71A, and 71B of 1C, a film-forming material, plasma, or the like may enter between the substrate 8 and the electrostatic chuck plate 20. There is no.

Further, according to the present embodiment, since the contact area between the electrostatic chuck plate 20 and the substrate 8 is smaller than that of the prior art, the residual charge of the electrostatic chuck plate 20 especially at a low temperature should be reduced. Accordingly, the substrate 8 can be easily removed from the electrostatic chuck plate 20.

Further, in the present embodiment, since the exposed portion of the electrostatic chuck plate 20 is covered by the deposition-preventing plate 40, the substrate 8 smaller than the electrostatic chuck plate 20 is sucked and held. At
The entire surface of the electrostatic chuck plate 20 can be covered, dust can be more reliably prevented from being generated, and deterioration of the electrostatic chuck plate 20 due to plasma, reaction gas, or the like can be surely prevented.

As described above, according to the present embodiment, it is possible to obtain the sputtering apparatus 1 including the electrostatic chuck 10 that can be used for substrates 8 of various sizes.

FIG. 4 is a plan view showing a schematic configuration of another embodiment of the electrostatic chuck according to the present invention. Hereinafter, portions corresponding to the above-described embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

As shown in FIG. 4, an electrostatic chuck 10A according to the present embodiment is composed of an electrode 23A obtained by equally dividing a circular electrode having substantially the same size as the electrostatic chuck plate 20 into four parts based on the center point thereof. 23B, 24A, and 24B, and a pair of electrodes that are point-symmetrical
B, and the other set of electrodes is configured as negative electrodes 24A and 24B.

In the case of the present embodiment, the positive electrodes 23A and 23B and the negative electrodes 24A and 24B which are symmetrical with respect to the point are alternately arranged on the concentric suction projections 31 (31A, 31B and 31C). On the suction protrusion 31 of the electric chuck plate 20, a uniform electrostatic suction force can be generated as a whole.

Therefore, according to the present embodiment, in an apparatus for performing a process in which a voltage is not applied to a substrate, the substrate can be uniformly attracted and held, and the generation of dust and the use of an electrostatic chuck by plasma, reaction gas, etc. The deterioration of the main body can be reliably prevented. The other configuration and operation and effect are the same as those of the above-described embodiment, and thus detailed description thereof will be omitted.

FIG. 5 is a side view showing a further schematic configuration of the electrostatic chuck according to the present invention. Hereinafter, portions corresponding to the above-described embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

As shown in FIG. 5, in the electrostatic chuck 10B of the present embodiment, the electrostatic chuck plate 2
A plurality of gas introduction holes 27 are provided at zero. The gas introduction hole 27 allows a gas for controlling the temperature of the substrate 8 to be introduced into a space enclosed by the suction protrusion 31 and the substrate 8. The gas introduction holes 27 that are not used when controlling the temperature of the substrate 8 are closed by the above-mentioned deposition preventing plate.

According to the present embodiment having such a configuration, the substrate and the concave bottom surface 51 of the electrostatic chuck plate 20 are formed.
To perform a process without lowering the heat transfer capability from the electrostatic chuck plate 20 to the substrate 8 since the gas for temperature control is filled in the enclosed space surrounded by the suction protrusions 53 and the suction protrusions 31A to 31C. Becomes possible.
Other configurations and operational effects are the same as those of the above-described embodiment, and thus detailed description thereof will be omitted.

It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made. For example,
In the above-described embodiment, the sputtering apparatus is described as an example of the vacuum processing apparatus according to the present invention. However, the present invention is not limited to this, and can be applied to, for example, a CVD apparatus, an etching apparatus, and the like.

In the above embodiment, a silicon wafer is used as a substrate. However, the present invention is not limited to this, and various substrates such as a glass substrate can be used.

Further, in the above-described embodiment, the suction protrusions suitable for the diameters of 4 inches, 6 inches and 8 inches are provided, but the number and the outer diameter of the suction protrusions may be changed unless departing from the present invention. It is also possible.

Further, it is also possible to provide a plurality of suction electrodes concentrically so as to generate an electrostatic suction force independently of each suction protrusion. In this case, there is an advantage that it is not necessary to apply the voltage to the electrode of the suction protrusion which is not used for sucking the substrate.

[0075]

As described above, according to the present invention, an electrostatic suction apparatus and a vacuum processing apparatus which can be used for substrates of various sizes without causing dust or deterioration of the electrostatic chuck body. Can be obtained.

[Brief description of the drawings]

FIG. 1 is a view showing a schematic configuration of a sputtering apparatus which is an embodiment of a vacuum processing apparatus according to the present invention.

FIG. 2 is a diagram showing a schematic configuration of an electrostatic chuck according to the present invention. (A): It is a top view of the electrostatic chuck. (B): It is a side view of the electrostatic chuck. (C): It is an enlarged view of the part shown by the dashed-dotted line of FIG.2 (b).

FIGS. 3A to 3C are diagrams showing a state where substrates having different outer diameters are attracted to the same electrostatic chuck.

FIG. 4 is a plan view showing a schematic configuration of an electrostatic chuck 10A according to a second embodiment of the present invention.

FIG. 5 is a side view showing a schematic configuration of an electrostatic chuck according to a third embodiment of the present invention.

6A and 6B are diagrams showing a schematic configuration of a conventional electrostatic chuck.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Sputtering apparatus (vacuum processing apparatus) 2 Vacuum processing tank 8 (8A, 8B, 8C) Substrate 10, 10A, 10B Electrostatic chuck 20 Electrostatic chuck plate (electrostatic chuck main body) 21 Main body part 31 (31A, 31B, 31C) ) Suction protrusion 40 (40A, 40B) Deposition plate (shielding member) 41A, 41B Body 51, 52, 53 Bottom of concave

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H02N 13/00 H01L 21/302 B (72) Inventor Osamu Yamaguchi 2500 Hagizono, Chigasaki-shi, Kanagawa Pref. In-house (72) Inventor Fuwa Kochi 2500 Hagizono, Chigasaki City, Kanagawa Prefecture F-term (reference) 3C016 GA10 5F004 AA16 BB22 BB23 BB25 BB26 BD05 5F031 CA02 HA08 HA16 HA18 HA37 HA38 MA28 MA29 PA18 PA26 5F045 AA08 BB14 DP02 EB05 EJ09 EJ10 EK05 EM05 EM09

Claims (6)

[Claims] 1. An electrostatic chuck device configured to suck and hold a substrate on an electrostatic chuck body by an electrostatic chucking force, wherein a plurality of suction protrusions are provided on the electrostatic chuck body at predetermined intervals. An electrostatic attraction device characterized by being provided concentrically. 2. The device according to claim 1, further comprising a shielding member formed in a shape to cover the exposed suction protrusion among the suction protrusions, and configured to be detachable from the electrostatic chuck body. Electrostatic suction device. 3. The electrostatic chuck according to claim 2, wherein a heating and cooling means capable of controlling the temperature to a predetermined temperature is integrally provided in the electrostatic chuck body. 4. The static electrostatic device according to claim 1, wherein a gas inlet for introducing a gas for controlling a substrate temperature is provided at a bottom surface of the concave portion of the electrostatic chuck body. Electroadsorption device. 5. An electrostatic chuck main body is provided with a bipolar suction electrode having first and second electrodes, and suction projections are provided evenly on each of the first and second electrodes. 5. The method according to claim 1, wherein
Item 3. The electrostatic suction device according to Item 1. 6. An electrostatic chuck according to claim 1, wherein said electrostatic chuck is disposed in a vacuum processing tank, and a predetermined process is performed on a substrate held by said electrostatic chuck. A vacuum processing apparatus configured to perform the processing.