JP2001066619A - 液晶装置及び電子機器 - Google Patents
液晶装置及び電子機器Info
- Publication number
- JP2001066619A JP2001066619A JP2000017621A JP2000017621A JP2001066619A JP 2001066619 A JP2001066619 A JP 2001066619A JP 2000017621 A JP2000017621 A JP 2000017621A JP 2000017621 A JP2000017621 A JP 2000017621A JP 2001066619 A JP2001066619 A JP 2001066619A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- substrate
- crystal device
- electrode
- reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 508
- 239000000758 substrate Substances 0.000 claims description 233
- 238000000034 method Methods 0.000 claims description 27
- 238000005286 illumination Methods 0.000 claims description 10
- 210000002858 crystal cell Anatomy 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 178
- 239000010408 film Substances 0.000 description 83
- 230000005684 electric field Effects 0.000 description 77
- 239000011159 matrix material Substances 0.000 description 53
- 230000007547 defect Effects 0.000 description 43
- 230000002829 reductive effect Effects 0.000 description 43
- 230000000694 effects Effects 0.000 description 26
- 230000005540 biological transmission Effects 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 239000010409 thin film Substances 0.000 description 19
- 238000004040 coloring Methods 0.000 description 17
- 230000002441 reversible effect Effects 0.000 description 15
- 238000002834 transmittance Methods 0.000 description 15
- 239000006185 dispersion Substances 0.000 description 12
- 238000013461 design Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000006121 base glass Substances 0.000 description 4
- 230000000740 bleeding effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UNPLRYRWJLTVAE-UHFFFAOYSA-N Cloperastine hydrochloride Chemical compound Cl.C1=CC(Cl)=CC=C1C(C=1C=CC=CC=1)OCCN1CCCCC1 UNPLRYRWJLTVAE-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 101100293260 Homo sapiens NAA15 gene Proteins 0.000 description 1
- 102100026781 N-alpha-acetyltransferase 15, NatA auxiliary subunit Human genes 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 101001094026 Synechocystis sp. (strain PCC 6803 / Kazusa) Phasin PhaP Proteins 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000017621A JP2001066619A (ja) | 1998-02-04 | 2000-01-26 | 液晶装置及び電子機器 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2365698 | 1998-02-04 | ||
| JP10-23656 | 1998-06-05 | ||
| JP15762298 | 1998-06-05 | ||
| JP10-157622 | 1998-06-05 | ||
| JP2000017621A JP2001066619A (ja) | 1998-02-04 | 2000-01-26 | 液晶装置及び電子機器 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52819499A Division JP3324119B2 (ja) | 1998-02-04 | 1999-01-26 | 液晶装置及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001066619A true JP2001066619A (ja) | 2001-03-16 |
| JP2001066619A5 JP2001066619A5 (enrdf_load_stackoverflow) | 2006-03-16 |
Family
ID=27284346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000017621A Pending JP2001066619A (ja) | 1998-02-04 | 2000-01-26 | 液晶装置及び電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001066619A (enrdf_load_stackoverflow) |
-
2000
- 2000-01-26 JP JP2000017621A patent/JP2001066619A/ja active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060126 |
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| A621 | Written request for application examination |
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| A977 | Report on retrieval |
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| A131 | Notification of reasons for refusal |
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| A521 | Written amendment |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090721 |
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| A521 | Written amendment |
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| A02 | Decision of refusal |
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