JP2001066207A - Method for mounting semiconductor pressure sensor chip - Google Patents
Method for mounting semiconductor pressure sensor chipInfo
- Publication number
- JP2001066207A JP2001066207A JP23906499A JP23906499A JP2001066207A JP 2001066207 A JP2001066207 A JP 2001066207A JP 23906499 A JP23906499 A JP 23906499A JP 23906499 A JP23906499 A JP 23906499A JP 2001066207 A JP2001066207 A JP 2001066207A
- Authority
- JP
- Japan
- Prior art keywords
- sensor chip
- pressure sensor
- semiconductor pressure
- load
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体圧力センサ
チップの実装方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a semiconductor pressure sensor chip.
【０００２】[0002]
【従来の技術】従来の半導体圧力センサの断面図を図４
に示す。この半導体圧力センサは、裏面側からエッチン
グして凹所３を設けることにより、主表面側に薄肉のダ
イヤフラム２ａが形成され、このダイヤフラム２ａの主
表面側にピエゾ抵抗素子（図示せず）が形成された約２
〜３．５ｍｍ角のシリコン基板２、及び、凹所３に連通
する貫通孔５を有し、シリコン基板２の裏面側に陽極接
合された台座４からなる半導体圧力センサチップ（以
下、センサチップという）１と、センサチップ１が底面
に接着固定される凹所７を有し、凹所７の底面に台座４
の貫通孔５と連通する圧力導入孔８が形成されたボディ
ブロック６とを備えている。尚、台座４はシリコン基板
２と熱膨張係数の近い材料（例えばガラスなど）から形
成されており、シリコン基板２は台座４を介してボディ
ブロック６に固定されているので、熱膨張係数の差によ
ってダイヤフラム２ａに印加される熱応力を低減でき、
圧力の検出誤差を低減することができる。2. Description of the Related Art FIG. 4 is a sectional view of a conventional semiconductor pressure sensor.
Shown in In this semiconductor pressure sensor, a thin diaphragm 2a is formed on the main surface side by forming a recess 3 by etching from the back surface side, and a piezoresistive element (not shown) is formed on the main surface side of the diaphragm 2a. About 2
A semiconductor pressure sensor chip (hereinafter, referred to as a sensor chip) including a silicon substrate 2 having a size of about 3.5 mm square and a through-hole 5 communicating with the recess 3 and including a pedestal 4 anodicly bonded to the back side of the silicon substrate 2 ) 1 and a recess 7 to which the sensor chip 1 is adhered and fixed to the bottom surface.
And a body block 6 in which a pressure introducing hole 8 communicating with the through hole 5 is formed. The pedestal 4 is formed of a material (for example, glass) having a thermal expansion coefficient close to that of the silicon substrate 2, and the silicon substrate 2 is fixed to the body block 6 via the pedestal 4. Thus, the thermal stress applied to the diaphragm 2a can be reduced,
Pressure detection errors can be reduced.
【０００３】センサチップ１は、台座４の底面（すなわ
ちセンサチップ１の実装面）及び底面の外周部に沿って
塗布された例えばペースト状のシリコンからなる接着剤
９によって、ボディブロック６に接着されており、シリ
コン基板２に設けた電極（図示せず）とボディブロック
６にインサート成形されたリード１０とは例えば金やア
ルミニウムなどの金属細線からなるボンディングワイヤ
１１を介して電気的に接続されている。The sensor chip 1 is adhered to the body block 6 by an adhesive 9 made of, for example, paste-like silicon applied along the bottom surface of the pedestal 4 (that is, the mounting surface of the sensor chip 1) and the outer peripheral portion of the bottom surface. An electrode (not shown) provided on the silicon substrate 2 and a lead 10 insert-molded on the body block 6 are electrically connected via a bonding wire 11 made of a thin metal wire such as gold or aluminum. I have.
【０００４】ここで、圧力導入孔８から台座４の貫通孔
５を介してシリコン基板２の凹所３に圧力が導入される
と、ダイヤフラム２ａが圧力に応じて撓み、ダイヤフラ
ム２ａに形成されたピエゾ抵抗素子の抵抗値が変化し、
抵抗値変化に応じた電気信号がボンディングワイヤ１１
及びリード１０を介して外部に出力される（例えば特開
平１１−２３３９６号公報参照）。Here, when pressure is introduced from the pressure introducing hole 8 to the recess 3 of the silicon substrate 2 through the through hole 5 of the pedestal 4, the diaphragm 2a is bent in accordance with the pressure, and is formed on the diaphragm 2a. The resistance of the piezoresistive element changes,
An electric signal corresponding to the change in the resistance value is transmitted to the bonding wire 11.
And output to the outside via the lead 10 (see, for example, JP-A-11-23396).
【０００５】[0005]
【発明が解決しようとする課題】通常、ＩＣチップを被
実装部にダイボンド実装する場合、被実装部と対向する
ＩＣチップの実装面及び実装面の外周に接着剤を塗布
し、ＩＣチップを被実装部に接着固定していた。この
時、ＩＣチップが被実装部に傾いた状態で取り付けられ
ることがないよう、ＩＣチップを十分な印加荷重（例え
ば約８〜９ｇ／ｍｍ２）で被実装部に押し付けていたた
め、ＩＣチップの実装面に塗布された接着剤は、ＩＣチ
ップの側面に押し出されてしまい、実質的にはＩＣチッ
プの側面に塗布された接着剤で被実装部に接着固定され
ていた。Normally, when an IC chip is die-bonded to a mounting portion, an adhesive is applied to the mounting surface of the IC chip facing the mounting portion and the outer periphery of the mounting surface, and the IC chip is mounted. It was adhesively fixed to the mounting part. At this time, the IC chip was pressed against the mounting portion with a sufficient applied load (for example, about 8 to 9 g / mm 2 ) so that the IC chip was not attached to the mounting portion in an inclined state. The adhesive applied to the mounting surface is pushed out to the side surface of the IC chip, and is substantially fixed to the mounting portion by the adhesive applied to the side surface of the IC chip.
【０００６】ところで、上述したような圧力を検出する
センサチップ１の場合、センサチップ１の接着強度を確
保すると共に、接着面からの圧力漏れを無くす必要があ
るが、ダイボンド実装時に、センサチップ１を通常のＩ
Ｃチップと同程度の印加荷重でボディブロック６に押し
付けると、台座４の裏面に塗布した接着剤９が側面に押
し出され、台座４の裏面に接着剤９が殆ど残らなくな
る。ここで、センサチップ１が接着されるボディブロッ
ク６の部位は、圧力導入孔８付近が盛り上がり、表面に
１０μｍ程度のうねりがあるため、接着剤９の厚みが約
１０μｍ以下になると、接着面に隙間ができて圧力漏れ
が発生したり、接着強度が不足する虞があった。逆に接
着剤９の厚みが約４０μｍ以上になった場合、ワイヤボ
ンディング時にキャピラリの先端がセンサチップ１の電
極に当たると、センサチップ１がバウンドしてしまい、
キャピラリからセンサチップ１に最適な荷重や超音波を
印加することができないため、ボンディング不良が発生
する虞もあった。By the way, in the case of the sensor chip 1 for detecting pressure as described above, it is necessary to secure the adhesive strength of the sensor chip 1 and eliminate pressure leakage from the adhesive surface. To the normal I
When pressed against the body block 6 with the same applied load as the C chip, the adhesive 9 applied to the back surface of the pedestal 4 is pushed out to the side surface, and the adhesive 9 hardly remains on the back surface of the pedestal 4. Here, in the portion of the body block 6 to which the sensor chip 1 is bonded, the vicinity of the pressure introducing hole 8 rises and the surface has a swell of about 10 μm. There is a possibility that a gap is formed and pressure leakage occurs, or the bonding strength is insufficient. Conversely, when the thickness of the adhesive 9 becomes about 40 μm or more, if the tip of the capillary hits the electrode of the sensor chip 1 during wire bonding, the sensor chip 1 will bounce,
Since it is not possible to apply an optimum load and ultrasonic waves to the sensor chip 1 from the capillary, there is a possibility that a bonding failure may occur.
【０００７】また、センサチップ１をボディブロック６
にダイボンドする際に、センサチップ１を吸着保持する
コレットと、コレットに取り付けられたヘッド部と、一
端がヘッド部に結合された棒状の軸と、軸を上下動自在
に支持する軸支持部とを有するダイボンド装置を用い、
センサチップ１を保持したコレットをボディブロック６
の上方に移動させた後、コレットを下降させて、センサ
チップ１をボディブロック６に押し付け、ヘッド部の自
重のみでセンサチップ１に印加荷重を加える場合、軸と
軸支持部との摩擦力で軸が引っ掛かってヘッド部（即ち
コレット）が下降しなかったり、ヘッド部が急激に落下
して、センサチップ１に衝撃がかかり、センサチップ１
が破損する虞もあった。The sensor chip 1 is connected to the body block 6
A collet for adsorbing and holding the sensor chip 1 when die-bonding, a head portion attached to the collet, a rod-shaped shaft having one end coupled to the head portion, and a shaft support portion for vertically supporting the shaft. Using a die bonding apparatus having
The collet holding the sensor chip 1 is inserted into the body block 6
After moving upward, the collet is lowered, the sensor chip 1 is pressed against the body block 6, and when the applied load is applied to the sensor chip 1 only by the weight of the head portion, the friction force between the shaft and the shaft support portion The shaft is caught and the head portion (that is, the collet) does not descend, or the head portion drops sharply, and an impact is applied to the sensor chip 1.
May be damaged.
【０００８】本発明は上記問題点に鑑みて為されたもの
であり、その目的とするところは、センサチップの接着
強度を向上させると共に、圧力漏れを無くした半導体圧
力センサチップの実装方法を提供することにある。さら
に、請求項３の発明の目的は、上記目的に加えて、セン
サチップの破損を防止した半導体圧力センサチップの実
装方法を提供することにある。The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a method of mounting a semiconductor pressure sensor chip which improves the adhesive strength of a sensor chip and eliminates pressure leakage. Is to do. It is still another object of the present invention to provide a method for mounting a semiconductor pressure sensor chip in which damage to the sensor chip is prevented.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、請求項１の発明では、シリコンダイヤフラムを具備
する半導体圧力センサチップを、前記シリコンダイヤフ
ラムに圧力を導入する圧力導入孔が設けられた被実装部
に接着剤で接着する半導体圧力センサチップの実装方法
であって、接着固定時に半導体圧力センサチップの実装
面と被実装部との間の接着剤の厚さが所望の厚さとなる
ような所定の印加加重で半導体圧力センサチップを被実
装部に押圧することを特徴とし、半導体圧力センサチッ
プを所定の印加荷重で被実装部に押圧することにより、
半導体圧力センサチップの実装面と被実装部とを接着す
る接着剤の厚みを所望の厚みとすることができる。した
がって、半導体圧力センサチップを被実装部に接着固定
する接着剤の厚みが薄くなりすぎて、接合強度が低下し
たり、圧力がリークするのを防止でき、逆に接着剤の厚
みが厚くなりすぎて、ワイヤボンディング時にキャピラ
リの先端が半導体圧力センサチップの電極に当たった際
に、半導体圧力センサチップがバウンドしてボンディン
グ不良が発生するといった不具合を防止できる。In order to achieve the above object, according to the first aspect of the present invention, a semiconductor pressure sensor chip having a silicon diaphragm is provided with a pressure introducing hole for introducing pressure to the silicon diaphragm. A method of mounting a semiconductor pressure sensor chip to be bonded to a mounting portion with an adhesive, such that a thickness of an adhesive between a mounting surface of the semiconductor pressure sensor chip and a mounting portion at the time of bonding and fixing becomes a desired thickness. The semiconductor pressure sensor chip is pressed against the mounting portion with a predetermined applied load, and by pressing the semiconductor pressure sensor chip against the mounting portion with a predetermined applied load,
The thickness of the adhesive bonding the mounting surface of the semiconductor pressure sensor chip to the mounting portion can be set to a desired thickness. Therefore, the thickness of the adhesive for bonding and fixing the semiconductor pressure sensor chip to the mounting portion is too thin, so that it is possible to prevent the bonding strength from being reduced or the pressure to leak, and conversely, the thickness of the adhesive becomes too thick. Thus, when the tip of the capillary hits the electrode of the semiconductor pressure sensor chip during wire bonding, it is possible to prevent a problem that the semiconductor pressure sensor chip bounces and a bonding failure occurs.
【００１０】請求項２の発明では、請求項１の発明にお
いて、上記印加荷重は、約５ｇ／ｍｍ２以上、且つ、約
６ｇ／ｍｍ２以下であることを特徴とし、請求項１の発
明と同様の作用を奏する。According to a second aspect of the present invention, in the first aspect of the invention, the applied load is about 5 g / mm 2 or more and about 6 g / mm 2 or less. It has a similar effect.
【００１１】請求項３の発明では、請求項１又は２の発
明において、重り部の自重で半導体圧力センサチップに
印加荷重を与える第１の印加手段と、ばね力で半導体圧
力センサチップに印加荷重を与える第２の印加手段とを
用い、第１及び第２の印加手段による印加荷重の和に対
する、第１の印加手段のみによる印加荷重の比率を略７
０％以上且つ略８０％以下とし、接着固定時に、先ず第
１の印加手段のみで半導体圧力センサチップに印加荷重
を与えた後、第１及び第２の印加手段により半導体圧力
センサチップに印加荷重を与えることを特徴とし、接着
固定時に半導体圧力センサチップに印加荷重を印加する
際、先ず、所定の印加荷重の略７０〜８０％の印加荷重
を半導体圧力センサチップに印加した後、１００％の印
加荷重を印加しているので、半導体圧力センサチップに
急激に印加荷重がかかることはなく、半導体圧力センサ
チップが破損するというような不具合を防止できる。According to a third aspect of the present invention, in the first or second aspect of the present invention, the first applying means for applying an applied load to the semiconductor pressure sensor chip by its own weight of the weight portion, and a load applied to the semiconductor pressure sensor chip by a spring force. And the ratio of the load applied by only the first application means to the sum of the load applied by the first and second application means is approximately 7
0% or more and about 80% or less. At the time of bonding and fixing, first, an applied load is applied to the semiconductor pressure sensor chip only by the first applying means, and then applied to the semiconductor pressure sensor chip by the first and second applying means. When applying an applied load to the semiconductor pressure sensor chip during bonding and fixing, first, an applied load of approximately 70 to 80% of a predetermined applied load is applied to the semiconductor pressure sensor chip, and then 100% Since the applied load is applied, the applied load is not suddenly applied to the semiconductor pressure sensor chip, and it is possible to prevent the semiconductor pressure sensor chip from being damaged.
【００１２】[0012]
【発明の実施の形態】本実施形態の半導体圧力センサチ
ップの実装方法を図１乃至図３を参照して説明する。半
導体圧力センサの構造は、上述した図４に示す半導体圧
力センサと同様であるので、同一の構成要素には同一の
符号を付して、その説明を省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for mounting a semiconductor pressure sensor chip according to the present embodiment will be described with reference to FIGS. Since the structure of the semiconductor pressure sensor is the same as that of the semiconductor pressure sensor shown in FIG. 4 described above, the same components are denoted by the same reference numerals and description thereof will be omitted.
【００１３】センサチップ１をボディブロック６にダイ
ボンドするダイボンド装置１２は、センサチップ１を吸
着保持するコレット１３と、コレット１３に取り付けら
れたヘッド部（重り部）１４と、一端がヘッド部１４に
結合された棒状の軸１５と、軸１５の他端部に結合され
たばね固定部１６と、軸１５に挿入される挿入孔１７ａ
を有し、ばね固定部１６とヘッド部１４との間で移動自
在に軸１５に取り付けられたばね取付部１７と、軸１５
に挿入される挿入孔１８ａを有し、ばね固定部１６とば
ね取付部１７との間で移動自在に軸１５に取り付けられ
たカム押当部１８と、一端がばね固定部１６に固定され
ると共に、他端がばね取付部１７に固定されたコイルば
ねからなる荷重ばね１９と、一端がカム押当部１８に固
定されると共に、他端がばね取付部１７に固定されたコ
イルばねからなる動作ばね２０とで構成され、ばね取付
部１７はダイボンド装置本体（図示せず）に取り付けら
れている。ここに、ヘッド部１４から第１の印加手段が
構成され、荷重ばね１９、動作ばね２０などから第２の
印加手段が構成される。A die bonding apparatus 12 for die bonding the sensor chip 1 to the body block 6 includes a collet 13 for holding the sensor chip 1 by suction, a head (weight) 14 attached to the collet 13, and one end to the head 14. A rod-shaped shaft 15 connected to the shaft, a spring fixing portion 16 connected to the other end of the shaft 15, and an insertion hole 17a inserted into the shaft 15.
A spring mounting portion 17 movably mounted on the shaft 15 between the spring fixing portion 16 and the head portion 14;
And a cam pressing portion 18 movably attached to the shaft 15 between the spring fixing portion 16 and the spring mounting portion 17, and one end is fixed to the spring fixing portion 16. At the same time, a load spring 19 composed of a coil spring having the other end fixed to the spring mounting portion 17, and a coil spring having one end fixed to the cam pressing portion 18 and the other end fixed to the spring mounting portion 17. The spring mounting portion 17 includes an operation spring 20 and is mounted on a die bonding apparatus main body (not shown). Here, the first applying means is constituted by the head portion 14, and the second applying means is constituted by the load spring 19, the operation spring 20, and the like.
【００１４】次に、このダイボンド装置１２を用いてセ
ンサチップ１をボディブロック６にダイボンド実装する
実装方法について説明する。センサチップ１を実装する
前の時点では、コレット１３に吸着保持されたセンサチ
ップ１がボディブロック６の上方に位置するよう、ダイ
ボンド装置本体がばね取付部１７を移動させる。ここ
で、動作ばね２０は圧縮された状態でばね取付部１７と
カム押当部１８との間に取り付けられており、動作ばね
２０のばね復帰力によって、カム押当部１８には図１中
上向きの力がかかり、ばね取付部１７には図１中下向き
の力がかかるため、ばね取付部１７は図１中下方に移動
しようとする。ばね取付部１７には荷重ばね１９が結合
されているので、ばね取付部１７が図１中下方に移動し
ようとすると、荷重ばね１９が自然長よりも伸長する。
この時、荷重ばね１９のばね復帰力によって、ばね固定
部１６に図１中下向きの力がかかり、ばね固定部１６に
結合された軸１５、即ちコレット１３が図１中下方に移
動しようとするが、ばね固定部１６はカム押当部１８と
当接するため、コレット１３の動きは規制される。Next, a method of mounting the sensor chip 1 on the body block 6 by die bonding using the die bonding apparatus 12 will be described. Before mounting the sensor chip 1, the die bonding apparatus main body moves the spring mounting portion 17 so that the sensor chip 1 sucked and held by the collet 13 is positioned above the body block 6. Here, the operation spring 20 is attached between the spring mounting portion 17 and the cam pressing portion 18 in a compressed state, and the spring pressing force of the operation spring 20 causes the cam pressing portion 18 to be attached to the cam pressing portion 18 in FIG. Since an upward force is applied and a downward force in FIG. 1 is applied to the spring mounting portion 17, the spring mounting portion 17 tends to move downward in FIG. Since the load spring 19 is connected to the spring mounting portion 17, when the spring mounting portion 17 attempts to move downward in FIG. 1, the load spring 19 extends beyond its natural length.
At this time, a downward force in FIG. 1 is applied to the spring fixing portion 16 by the spring return force of the load spring 19, and the shaft 15, that is, the collet 13 connected to the spring fixing portion 16 tends to move downward in FIG. However, the movement of the collet 13 is restricted because the spring fixing portion 16 contacts the cam pressing portion 18.
【００１５】その後、カム押当部１８が図示しないカム
によって図１中下方に押圧されると、カム押当部１８は
図１に示す位置から下方に移動し、図２に示すように、
コレット１３に吸着保持されたセンサチップ１がボディ
ブロック６に当接し、ヘッド部１４の自重がセンサチッ
プ１に印加される。また、センサチップ１がボディブロ
ック６に当接すると、コレット１３はそれ以上下方へ移
動できないので、カム押当部１８と共に下降していたヘ
ッド部１４はフリーになる。Thereafter, when the cam pressing portion 18 is pressed downward in FIG. 1 by a cam (not shown), the cam pressing portion 18 moves downward from the position shown in FIG. 1, and as shown in FIG.
The sensor chip 1 sucked and held by the collet 13 contacts the body block 6, and the weight of the head portion 14 is applied to the sensor chip 1. When the sensor chip 1 comes into contact with the body block 6, the collet 13 cannot move further downward, so that the head portion 14 that has been lowered together with the cam pressing portion 18 becomes free.
【００１６】さらにカム押当部１８がカムによって図２
中下方に押圧されると、図３に示すように、カム押当部
１８は図２に示す位置からさらに下方に移動する。カム
押当部１８の下降に伴って、ばね取付部１７が下降する
と、荷重ばね１９が伸長するため、荷重ばね１９のばね
復帰力によって、ばね固定部１６に図３中下向きの力が
かかり、ヘッド部１４の自重に加えて、荷重ばね１９の
ばね復帰力がばね固定部１６、軸１５、ヘッド部１４及
びコレット１３を介してセンサチップ１に印加される。Further, the cam pressing portion 18 is driven by a cam as shown in FIG.
When pressed in the middle and downward directions, as shown in FIG. 3, the cam pressing portion 18 moves further downward from the position shown in FIG. When the spring mounting portion 17 is lowered with the lowering of the cam pressing portion 18, the load spring 19 expands, and a downward force in FIG. 3 is applied to the spring fixing portion 16 by the spring return force of the load spring 19. In addition to the weight of the head portion 14, a spring return force of the load spring 19 is applied to the sensor chip 1 via the spring fixing portion 16, the shaft 15, the head portion 14, and the collet 13.
【００１７】ここで、ヘッド部１４の自重及び荷重ばね
１９のばね力により印加される印加荷重は、センサチッ
プ１の実装面と被実装部（ボディブロック６）との間の
接着剤９の厚みが所望の厚み（例えば約１０μｍ以上、
且つ、約４０μｍ以下）となるような印加荷重（例えば
約５ｇ／ｍｍ２以上、且つ、約６ｇ／ｍｍ２以下）に設
定されており、このような印加荷重をセンサチップ１に
印加することによって、センサチップ１をボディブロッ
ク６に接着する接着剤９の厚みは約１０μｍ以上、且
つ、約４０μｍ以下となる。すなわち、接着剤９の厚み
は約１０μｍ以上になるので、台座４の裏面から接着剤
９が完全に押し出されることはなく、台座４の裏面及び
側面が接着剤９でボディブロック６に接着されるから、
台座４の接着面積が増加して、接着強度が向上し、且
つ、接着面から圧力がリークするのを防止できる。ま
た、接着剤９の厚みは約４０μｍ以下になるので、ワイ
ヤボンディングの際にキャピラリの先端がセンサチップ
１に当たっても、センサチップ１がバウンドすることは
なく、キャピラリからセンサチップ１に最適な荷重や超
音波が印加されるので、ワイヤボンディングの不良が低
減する。Here, the weight applied by the weight of the head portion 14 and the spring force of the load spring 19 is determined by the thickness of the adhesive 9 between the mounting surface of the sensor chip 1 and the mounting portion (body block 6). Has a desired thickness (for example, about 10 μm or more,
The applied load is set to be about 40 μm or less (for example, about 5 g / mm 2 or more and about 6 g / mm 2 or less). By applying such an applied load to the sensor chip 1, The thickness of the adhesive 9 for bonding the sensor chip 1 to the body block 6 is about 10 μm or more and about 40 μm or less. That is, since the thickness of the adhesive 9 is about 10 μm or more, the adhesive 9 is not completely extruded from the back surface of the pedestal 4, and the back surface and side surfaces of the pedestal 4 are bonded to the body block 6 with the adhesive 9. From
The bonding area of the pedestal 4 is increased, the bonding strength is improved, and pressure can be prevented from leaking from the bonding surface. Also, since the thickness of the adhesive 9 is about 40 μm or less, even if the tip of the capillary hits the sensor chip 1 during wire bonding, the sensor chip 1 does not bounce, and the optimal load from the capillary to the sensor chip 1 is reduced. Since ultrasonic waves are applied, defects in wire bonding are reduced.
【００１８】また、ヘッド部１４及び荷重ばね１９によ
る印加荷重の和に対する、ヘッド部１４のみによる印加
荷重の比率は約７０％以上、且つ、約８０％以下となる
ように、ヘッド部１４の重量や荷重ばね１９及び動作ば
ね２０のばね定数が設定されているので、センサチップ
１に急激に荷重がかかることはなく、先ずヘッド部１４
の自重によって、最終的に印加される印加荷重の約７０
〜８０％に相当する印加荷重がセンサチップ１にかか
り、その後ヘッド部１４の自重及び荷重ばね１９のばね
力によって、センサチップ１にかかる印加荷重が徐々に
増加するため、センサチップ１に急激に荷重がかかり、
破損することはない。The ratio of the load applied by the head 14 alone to the sum of the loads applied by the head 14 and the load spring 19 is about 70% or more and about 80% or less. Since the spring constants of the load spring 19 and the operation spring 20 are set, the load is not suddenly applied to the sensor chip 1,
Approximately 70 of the applied load finally applied by the own weight of
An applied load corresponding to ８０80% is applied to the sensor chip 1, and thereafter, the applied load applied to the sensor chip 1 is gradually increased due to the weight of the head portion 14 and the spring force of the load spring 19. Load is applied,
No damage.
【００１９】[0019]
【発明の効果】上述のように、請求項１の発明は、シリ
コンダイヤフラムを具備する半導体圧力センサチップ
を、前記シリコンダイヤフラムに圧力を導入する圧力導
入孔が設けられた被実装部に接着剤で接着する半導体圧
力センサチップの実装方法であって、接着固定時に半導
体圧力センサチップの実装面と被実装部との間の接着剤
の厚さが所望の厚さとなるような所定の印加加重で半導
体圧力センサチップを被実装部に押圧することを特徴と
し、半導体圧力センサチップを所定の印加荷重で被実装
部に押圧することにより、半導体圧力センサチップの実
装面と被実装部とを接着する接着剤の厚みを所望の厚み
にできるという効果がある。したがって、半導体圧力セ
ンサチップを被実装部に接着固定する接着剤の厚みが薄
くなりすぎて、接合強度が低下したり、圧力がリークす
るのを防止でき、逆に接着剤の厚みが厚くなりすぎて、
ワイヤボンディング時にキャピラリの先端が半導体圧力
センサチップの電極に当たった際に、半導体圧力センサ
チップがバウンドしてボンディング不良が発生するとい
った不具合を防止できるという効果がある。As described above, according to the first aspect of the present invention, a semiconductor pressure sensor chip having a silicon diaphragm is bonded to a mounting portion provided with a pressure introducing hole for introducing pressure to the silicon diaphragm with an adhesive. A method of mounting a semiconductor pressure sensor chip to be bonded, the semiconductor being applied with a predetermined applied load such that the thickness of an adhesive between a mounting surface of the semiconductor pressure sensor chip and a mounting portion at the time of bonding and fixing becomes a desired thickness. The pressure sensor chip is pressed against the mounting portion, and the semiconductor pressure sensor chip is pressed against the mounting portion with a predetermined applied load, thereby bonding the mounting surface of the semiconductor pressure sensor chip to the mounting portion. There is an effect that the thickness of the agent can be made a desired thickness. Therefore, the thickness of the adhesive for bonding and fixing the semiconductor pressure sensor chip to the mounting portion is too thin, so that it is possible to prevent the bonding strength from being reduced or the pressure to leak, and conversely, the thickness of the adhesive becomes too thick. hand,
When the tip of the capillary hits the electrode of the semiconductor pressure sensor chip at the time of wire bonding, the semiconductor pressure sensor chip can be prevented from bouncing and a bonding failure can be prevented.
【００２０】請求項２の発明は、請求項１の発明におい
て、上記印加荷重は、約５ｇ／ｍｍ ２以上、且つ、約６
ｇ／ｍｍ２以下であることを特徴とし、請求項１の発明
と同様の効果を奏する。[0020] The invention of claim 2 is the invention according to claim 1.
The applied load is about 5 g / mm 2Above and about 6
g / mm2The invention according to claim 1, characterized in that:
It has the same effect as.
【００２１】請求項３の発明は、請求項１又は２の発明
において、重り部の自重で半導体圧力センサチップに印
加荷重を与える第１の印加手段と、ばね力で半導体圧力
センサチップに印加荷重を与える第２の印加手段とを用
い、第１及び第２の印加手段による印加荷重の和に対す
る、第１の印加手段のみによる印加荷重の比率を略７０
％以上且つ略８０％以下とし、接着固定時に、先ず第１
の印加手段のみで半導体圧力センサチップに印加荷重を
与えた後、第１及び第２の印加手段により半導体圧力セ
ンサチップに印加荷重を与えることを特徴とし、接着固
定時に半導体圧力センサチップに印加荷重を印加する
際、先ず、所定の印加荷重の略７０〜８０％の印加荷重
を半導体圧力センサチップに印加した後、１００％の印
加荷重を印加しているので、半導体圧力センサチップに
急激に印加荷重がかかることはなく、半導体圧力センサ
チップが破損するというような不具合を防止できるとい
う効果がある。According to a third aspect of the present invention, in the first or the second aspect of the present invention, the first application means for applying an applied load to the semiconductor pressure sensor chip by the weight of the weight portion, and a load applied to the semiconductor pressure sensor chip by a spring force. And the ratio of the load applied by only the first application unit to the sum of the load applied by the first and second application units is approximately 70.
% And approximately 80% or less.
Applying an applied load to the semiconductor pressure sensor chip only by the application means, and then applying an applied load to the semiconductor pressure sensor chip by the first and second application means. Is applied, first, an applied load of approximately 70 to 80% of a predetermined applied load is applied to the semiconductor pressure sensor chip, and then an applied load of 100% is applied. There is an effect that no load is applied and a problem such as breakage of the semiconductor pressure sensor chip can be prevented.
【図１】本実施形態の半導体圧力センサチップの一実装
工程を示す断面図である。FIG. 1 is a cross-sectional view showing one mounting step of a semiconductor pressure sensor chip of the present embodiment.
【図２】同上の別の工程を示す断面図である。FIG. 2 is a cross-sectional view showing another step of the above.
【図３】同上のまた別の工程を示す断面図である。FIG. 3 is a sectional view showing another step of the above.
【図４】従来の半導体圧力センサの実装方法を説明する
断面図である。FIG. 4 is a cross-sectional view illustrating a method for mounting a conventional semiconductor pressure sensor.
１ センサチップ ２ シリコン基板 ２ａ ダイヤフラム ３ 凹所 ４ 台座 ５ 貫通孔 ６ ボディブロック ７ 凹所 ８ 圧力導入孔 ９ 接着剤 REFERENCE SIGNS LIST 1 sensor chip 2 silicon substrate 2 a diaphragm 3 recess 4 pedestal 5 through hole 6 body block 7 recess 8 pressure introducing hole 9 adhesive
───────────────────────────────────────────────────── フロントページの続き (72)発明者 可児 充弘 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 齊藤 宏 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 酒井 孝昌 大阪府門真市大字門真1048番地松下電工株 式会社内 Ｆターム(参考） 2F055 AA40 BB20 CC02 DD05 EE13 FF43 GG01 HH19 4M112 AA01 BA01 CA15 DA18 EA02 EA14 GA01 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Mitsuhiro Kani, Inventor Matsushita Electric Works Co., Ltd., 1048, Kazuma, Kadoma, Osaka Prefecture (72) Inventor Hiroshi Saito 1048, Kazuma, Kazuma, Kadoma, Osaka, Japan Matsushita Electric Works, Ltd. 72) Inventor Takamasa Sakai 1048 Kazuma Kadoma, Kadoma City, Osaka Prefecture F-term in Matsushita Electric Works, Ltd.
Claims (3)
力センサチップを、前記シリコンダイヤフラムに圧力を
導入する圧力導入孔が設けられた被実装部に接着剤で接
着する半導体圧力センサチップの実装方法であって、接
着固定時に半導体圧力センサチップの実装面と被実装部
との間の接着剤の厚さが所望の厚さとなるような所定の
印加加重で半導体圧力センサチップを被実装部に押圧す
ることを特徴とする半導体圧力センサチップの実装方
法。1. A method of mounting a semiconductor pressure sensor chip, comprising bonding a semiconductor pressure sensor chip having a silicon diaphragm to a mounting portion provided with a pressure introducing hole for introducing pressure to the silicon diaphragm, using an adhesive. Pressing the semiconductor pressure sensor chip against the mounting portion with a predetermined applied load such that the thickness of the adhesive between the mounting surface of the semiconductor pressure sensor chip and the mounting portion at the time of bonding and fixing becomes a desired thickness. Characteristic mounting method of semiconductor pressure sensor chip.
つ、約６ｇ／ｍｍ２以下であることを特徴とする請求項
１記載の半導体圧力センサチップの実装方法。2. The method according to claim 1, wherein the applied load is about 5 g / mm 2 or more and about 6 g / mm 2 or less.
印加荷重を与える第１の印加手段と、ばね力で半導体圧
力センサチップに印加荷重を与える第２の印加手段とを
用い、第１及び第２の印加手段による印加荷重の和に対
する、第１の印加手段のみによる印加荷重の比率を略７
０％以上且つ略８０％以下とし、接着固定時に、先ず第
１の印加手段のみで半導体圧力センサチップに印加荷重
を与えた後、第１及び第２の印加手段により半導体圧力
センサチップに印加荷重を与えることを特徴とする請求
項１又は２記載の半導体圧力センサチップの実装方法。3. The first and second applying means for applying an applied load to the semiconductor pressure sensor chip by its own weight of the weight portion and the second applying means for applying an applied load to the semiconductor pressure sensor chip by a spring force. The ratio of the load applied by only the first application means to the sum of the load applied by the second application means is approximately 7
0% or more and about 80% or less. At the time of bonding and fixing, first, an applied load is applied to the semiconductor pressure sensor chip only by the first applying means, and then applied to the semiconductor pressure sensor chip by the first and second applying means. 3. The method of mounting a semiconductor pressure sensor chip according to claim 1, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23906499A JP3593928B2 (en) | 1999-08-26 | 1999-08-26 | Mounting method of semiconductor pressure sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23906499A JP3593928B2 (en) | 1999-08-26 | 1999-08-26 | Mounting method of semiconductor pressure sensor chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001066207A true JP2001066207A (en) | 2001-03-16 |
| JP3593928B2 JP3593928B2 (en) | 2004-11-24 |
Family
ID=17039336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23906499A Expired - Fee Related JP3593928B2 (en) | 1999-08-26 | 1999-08-26 | Mounting method of semiconductor pressure sensor chip |
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| Country | Link |
|---|---|
| JP (1) | JP3593928B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007019337A (en) * | 2005-07-08 | 2007-01-25 | Sony Corp | Bonding device, transport device for semiconductor chip, bonding method, and transport method for semiconductor chip |
| US7534320B2 (en) * | 2005-11-15 | 2009-05-19 | Northrop Grumman Corporation | Lamination press pad |
-
1999
- 1999-08-26 JP JP23906499A patent/JP3593928B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007019337A (en) * | 2005-07-08 | 2007-01-25 | Sony Corp | Bonding device, transport device for semiconductor chip, bonding method, and transport method for semiconductor chip |
| JP4572763B2 (en) * | 2005-07-08 | 2010-11-04 | ソニー株式会社 | Bonding apparatus, semiconductor chip transport apparatus, bonding method, and semiconductor chip transport method |
| US7534320B2 (en) * | 2005-11-15 | 2009-05-19 | Northrop Grumman Corporation | Lamination press pad |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3593928B2 (en) | 2004-11-24 |
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