JP2001060696A - Semiconductor integrated circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the thickness of the driver circuit portion of a display device by only removing the substrate of a stick crystal, after the mechanical and electrical connection of a semiconductor integrate circuit having a thin film transistor which is equivalent to the stick crystal are completed on the substrate of the display device. SOLUTION: A semiconductor integrated circuit is constituted in such a structure that an N-channel TFT 12 and a P-channel TFT 13 are sandwiched between a base insulating film 11 and an interlayer insulating film 14 or a passivation film 15 of silicon nitride, etc. The electrical connection and mechanical bonding between a stick crystal and the substrate of a liquid crystal display device are completed by bonding the substrate of a stick driver to the substrate of the display device, by injecting an adhesive into the space between the substrates, applying a pressure to the substrates, and then, heat-treating the adhesive in an oven. When the work is left in the flow of a mixed gas of fluorine trichloride and nitrogen, only a releasable layer is selectively etched and the bottom face of a base film is exposed. Consequently, the substrate of the stick crystal can be separated from a semiconductor integrated circuit.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a passive-matrix or active-matrix display device such as a liquid crystal display device, and more particularly to a display device substrate having a driving semiconductor integrated circuit effectively mounted thereon. It is an object to obtain a fashionable display device that occupies a large area.

[0002]

2. Description of the Related Art As a matrix type display device, a passive matrix type and an active matrix type are known. In the passive matrix type, a large number of strip-shaped electric wirings (row wirings) made of a transparent conductive film or the like are formed in a certain direction on a first substrate, and on the second substrate, the above-mentioned first substrate is formed. A similar strip-shaped electric wiring (column wiring) is formed in a direction substantially perpendicular to the electric wiring. Then, the substrates are arranged such that the electric wirings on both substrates face each other.

If an electro-optic material, such as a liquid crystal material, which changes in translucency, light reflection and scattering due to voltage and current, is provided between substrates, an arbitrary low wiring of the first substrate and a second wiring can be provided.
If a voltage, current, or the like is applied between the substrate and any column wiring, the transmissive property, the light reflection / scattering property, and the like of the intersecting portion can be selected. In this way, matrix display becomes possible.

In the active matrix type, a row wiring and a column wiring are formed on a first substrate by using a multi-layer wiring technique, a pixel electrode is provided at an intersection of the wiring, and a thin film transistor (TFT) is provided for the pixel electrode. ) Is provided to control the potential and current of the pixel electrode. Also, a transparent conductive film is provided on the second substrate,
The substrate is arranged such that the pixel electrode of the substrate and the transparent conductive film of the second substrate face each other.

[0005] In any case, the substrate was selected by the process. For example, in a passive matrix type having no complicated process except for forming a transparent conductive film and etching the same to form a row / column wiring pattern, a plastic substrate may be used instead of glass.
On the other hand, in the active matrix type which has a relatively high temperature film forming step and needs to avoid mobile ions such as sodium, it is necessary to use a glass substrate having an extremely low alkali concentration as a substrate.

[0006]

In any case, in the conventional matrix type display device, except for special ones,
It was necessary to attach a semiconductor integrated circuit (peripheral drive circuit or bar circuit) for driving the matrix. Traditionally, this has been the case with tape automatic bonding (T
AB) and chip-on-glass (COG) methods. However, the size of the matrix is
Since it is a large-scale one that has as many as 00 rows, the number of integrated circuit terminals is very large, and the driver circuit is a rectangular IC package or semiconductor chip. Therefore, these terminals are connected to electric wiring on the substrate. Therefore, the area of the peripheral portion has become so large that it cannot be ignored compared to the display screen.

As a method for solving this problem, Japanese Patent Application Laid-Open
-14880 has a driver circuit and one of the matrices.
A method is disclosed in which a substrate is formed on an elongated substrate (referred to as a stick or a stick crystal) having substantially the same size as a side and connected to a terminal portion of a matrix. Such an arrangement is possible because a width of about 2 mm is sufficient for the driver circuit.
For this reason, most of the substrates could be used as display screens.

Of course, in this case, if the area of the matrix is large, the circuit cannot be formed on a silicon wafer, so it is necessary to form the circuit on a glass substrate or the like. Therefore, the active element used in the semiconductor circuit is a TFT.

However, regarding the stick crystal, the thickness of the substrate of the driver circuit has hindered the miniaturization of the entire display device. For example, it is possible to reduce the thickness of the substrate to 0.3 mm because the display device needs to be thinner by optimizing the type and process of the substrate. However, it is difficult for the thickness of the stick crystal to be 0.5 mm or less due to the strength required in the manufacturing process. As a result, when the substrates are bonded together,
Stick crystals will come out more than 0.2mm.

If the type of the substrate of the stick crystal is different from that of the substrate of the display device, the circuit may be defective due to a difference in thermal expansion or the like. In particular, when a plastic substrate is used as a substrate of a display device, this problem is remarkable. This is because it is substantially impossible to use plastic as the stick crystal substrate from the viewpoint of heat resistance. An object of the present invention is to solve such a problem of the stick crystal and to further reduce the size and weight of the display device.

[0011]

SUMMARY OF THE INVENTION According to the present invention, a semiconductor integrated circuit equivalent to a stick crystal is mechanically bonded onto a substrate of a display device, and after electrical connection is completed, the stick is removed. It is characterized in that the thickness of the driver circuit portion is reduced by removing only the crystal substrate. In such a structure, the deformation stress due to the thermal expansion of the substrate is uniformly applied to the entire circuit, and therefore, it is possible to prevent the stress from being concentrated only at a specific location and causing a defect.

The basic structure of the present invention is that an electric wiring and a surface of the first substrate, which is electrically connected to the electric wiring and has an elongated semiconductor integrated circuit having a TFT, are formed with respect to a surface on which the electric wiring is formed. The display device has a structure in which a transparent conductive film of a second substrate having a transparent conductive film is opposed to the second substrate.
Like the 4880 stick crystal, the semiconductor integrated circuit is roughly equal to the length of one side of the display surface (that is, the matrix) of the display device, and is peeled off from a substrate manufactured on another substrate. , Mounted on the first substrate.

Particularly, in the case of the passive matrix type,
A first electric wiring of a plurality of transparent conductive films extending in a first direction and an elongated first semiconductor integrated circuit connected to the first electric wiring and having a TFT and extending in a second direction substantially perpendicular to the first direction And a second electric wiring of a plurality of transparent conductive films extending in the second direction, and a TFT
And a second substrate having a second semiconductor integrated circuit extending in the first direction and a second substrate arranged so that the first electric wiring and the second electric wiring face each other. The first and second semiconductor integrated circuits are obtained by peeling off those manufactured on another substrate and mounting them on the respective substrates.

In the case of the active matrix type, a plurality of first electric wirings extending in a first direction, a second electric wiring connected to the first electric wirings, and having a TFT, are substantially perpendicular to the first direction. A first semiconductor integrated circuit extending in the first direction, a plurality of second electric wirings extending in the second direction,
A first substrate having an FT and having a second semiconductor integrated circuit extending in a first direction;
A first and a second electric wiring of the first substrate,
In a display device in which the transparent conductive film of the second substrate is arranged so as to face the first substrate, the first and second semiconductor integrated circuits formed on another substrate are separated from each other, and the first and second semiconductor integrated circuits are separated from each other. It is mounted on a substrate.

A method of forming a semiconductor integrated circuit having a TFT on another substrate, peeling the semiconductor integrated circuit, and attaching the semiconductor integrated circuit to another substrate (or removing the original substrate after attaching to another substrate) Is generally known as one of SOI (Silicon On Insulator) technologies.
504139 or other known techniques, or techniques such as those used in the following embodiments may be used.

FIG. 1 shows an example of a cross section of the display device of the present invention. FIG. 1A is viewed at a relatively small magnification. The left side of the figure shows the driver circuit section 7 provided with the semiconductor integrated circuit, and the right side shows the matrix section 8. On the substrate 1, a pattern of an electric wiring 4 made of a material such as a transparent isoelectric film is formed, and further, a projection (bump) 6 is provided with a material such as gold. On the other hand, the semiconductor integrated circuit 2 has a thickness substantially equal to that of the TFT, and the electrode 5 is made of a material such as a conductive oxide whose contact resistance does not change by oxidation, such as a conductive oxide. It is provided and brought into contact with the bump 6. Then, a resin 3 is sealed between the semiconductor integrated circuit 2 and the substrate 1 for mechanical fixing. (Fig. 1 (A))

FIG. 1B is an enlarged view of a contact portion surrounded by a dotted line in FIG. The code is shown in FIG.
The same thing as (A) is shown. FIG. 1C is an enlarged view of a portion surrounded by a dotted line in FIG. That is, the semiconductor integrated circuit has a structure in which an N-channel TFT (12) and a P-channel TFT (13) are sandwiched between a base insulating film 11, an interlayer insulator 14, or a passivation film 15 such as silicon nitride. . (FIG. 1 (B), FIG. 1
(C))

Normally, silicon oxide is used as the base film 11 when a semiconductor integrated circuit is formed. However, since silicon oxide alone is inferior in moisture resistance, a passivation film must be separately provided thereon. As shown in (1), if the thickness of the semiconductor circuit and its contact portion is smaller than the thickness of the liquid crystal between the substrates, the counter substrate 16 can be overlaid on the circuit. In that case, liquid crystal sealing (sealing) processing is performed outside the driver circuit section 7 with a sealing agent 17 such as an epoxy resin, similarly to the liquid crystal display device disclosed in JP-A-5-66413. Since the liquid crystal material 18 is filled between the substrates 1 and 16, no mobile ions or the like enter from the outside, so that it is not necessary to provide a special passivation film. (Fig. 3)

As for the contact portion, in addition to the method using a bump, as shown in FIG. 1D, conductive particles such as gold particles 9 are diffused into the bonding portion, thereby
Electrical contact may be obtained. The diameter of the particles is
It is preferable that the distance is slightly larger than the distance between the semiconductor integrated circuit 2 and the substrate 1. (FIG. 1D) An outline of a manufacturing order of such a display device is shown in FIG. FIG. 2 shows a manufacturing procedure of a passive matrix display device. First, a number of semiconductor integrated circuits 22 are formed on a suitable substrate 21. (Fig. 2 (A))

Then, this is divided to obtain stick crystals 23 and 24. The resulting stick crystal is tested for electrical properties before moving on to the next step.
It is good to sort out good / defective products. (FIG. 2B) Next, the circuit-formed surfaces of the stick crystals 23 and 24 are respectively placed on the surfaces 26 and 28 of another substrates 25 and 27 on which wiring patterns are formed by the transparent conductive film. And make an electrical connection. (FIG. 2 (C), FIG.
(D))

Thereafter, the substrates of the stick drivers 23 and 24 are peeled off by the SOI technique, leaving only the semiconductor integrated circuits 29 and 30 on the surfaces 26 and 28 of the substrate.
(FIGS. 2E and 2F) Finally, a passive matrix display device is obtained by facing the substrates thus obtained. The surface 26 means the opposite surface of the surface 26, that is, the surface on which the wiring pattern is not formed (FIG. 2).
(G))

In the above case, the row stick crystal (stick crystal for the driver circuit for driving the row wiring) and the column stick crystal (the stick crystal for the driver circuit for driving the column wiring) are the same. Although it is cut from the substrate 21, it goes without saying that it may be cut from another substrate. Although FIG. 2 shows an example of a passive matrix display device, it goes without saying that the same can be applied to an active matrix display device. Further, the case where a material such as a film is formed as the substrate is described in the embodiment.

[0023]

[Embodiment 1] This embodiment shows an outline of a manufacturing process of one substrate of a passive matrix type liquid crystal display device. This embodiment will be described with reference to FIGS. FIG. 4 schematically shows a process of forming a driver circuit on a stick crystal. FIG. 5 schematically shows a process of mounting a stick crystal on a substrate of a liquid crystal display device.

First, as a release layer on the glass substrate 31,
A 3000 Å thick silicon film 32 was deposited. Since the silicon film 32 is etched when the substrate and the circuit formed thereon are separated, there is almost no problem with the film quality. Therefore, the silicon film 32 may be deposited by a method capable of mass production. Further, the silicon film may be amorphous or crystalline.

The glass substrate is made of Corning 705.
9, 1737, NH Techno Glass NA45, 35
An alkali-free or low alkali glass such as Nippon Electric Glass OA2 or quartz glass may be used. When quartz glass is used, the cost is a problem.
Since the area used for one liquid crystal display device is extremely small, the cost per unit is sufficiently small.

On the silicon film 32, a 5000-nm-thick silicon oxide film 33 is deposited. Since this silicon oxide film serves as a base film, sufficient care must be taken in its production. And
Crystalline island-like silicon regions (silicon islands) 34 and 35 were formed by a known method. The thickness of the silicon film greatly affects the required characteristics of the semiconductor circuit, but generally, the thinner the film, the better. In this embodiment, the angle is set to 400 to 600 °.

In order to obtain crystalline silicon, a method of irradiating amorphous silicon with strong light such as a laser (laser annealing method) or a method of solid-phase growth by thermal annealing (solid-phase growth method) is used. When using the solid phase growth method, as disclosed in JP-A-6-244104, when a catalytic element such as nickel is added to silicon, the crystallization temperature can be lowered and the annealing time can be shortened. Further, as described in Japanese Patent Application Laid-Open No. 6-318701, laser anneal may be performed on silicon crystallized once by the solid phase growth method. Which method is adopted may be determined depending on the required characteristics of the semiconductor circuit, the heat-resistant temperature of the substrate, and the like.

Thereafter, a plasma CVD method or a thermal CV
A gate insulating film 36 of silicon oxide having a thickness of 1200 ° was deposited by the method D, and gate electrodes / wirings 37 and 38 were formed of crystalline silicon having a thickness of 5000 °. The gate wiring may be a metal such as aluminum, tungsten, or titanium, or a silicide thereof. Further, when a metal gate electrode is formed, Japanese Patent Laid-Open No.
As disclosed in 267667 or 6-338612, the top or side surfaces may be coated with anodic oxide. What kind of material the gate electrode is composed of
What is necessary is just to determine according to the required characteristics of a semiconductor circuit, the heat resistant temperature of a board | substrate, etc. (FIG. 4 (A))

Thereafter, N-type and P-type impurities are introduced into the silicon island in a self-aligned manner by an ion doping method or the like to form an N-type region 39 and a P-type region 4.
0 was formed. Then, an interlayer insulator (a 5000-thick silicon oxide film) 41 was deposited by a known means. And
A contact hole was formed in this, and aluminum alloy wirings 41 to 44 were formed. (FIG. 4 (B))

Further, a silicon nitride film 46 having a thickness of 2000 .ANG. Is deposited thereon as a passivation film by a plasma CVD method.
A contact hole leading to was opened. Then, an electrode 47 having an indium tin oxide film (ITO, thickness: 1000 Å) was formed by a sputtering method. ITO is a transparent conductive oxide. Thereafter, a gold bump 48 having a diameter of about 50 μm and a height of about 30 μm was mechanically formed on the ITO electrode 47. The circuit thus obtained was divided into suitable sizes, and thus a stick crystal was obtained. (FIG. 4 (C))

On the other hand, the electrode 50 was also formed on the substrate 49 of the liquid crystal display device by using ITO having a thickness of 1000 °. In this embodiment, the thickness of the substrate of the liquid crystal display device is 0.3 m.
m polyethylene polyethylene (PES) was used.
Then, the substrate 31 of the stick driver was bonded to the substrate 49 by applying pressure. At this time, the electrode 47 and the electrode 50 are electrically connected by the bump 48.
(FIG. 5 (A))

Next, an adhesive 51 mixed with a thermosetting organic resin was injected into the gap between the stick crystal 31 and the substrate 49 of the liquid crystal display. The adhesive may be applied to one of the surfaces before the stick crystal 31 and the substrate 49 of the liquid crystal display device are pressed.

Then, the electrical connection and the mechanical bonding between the stick crystal 31 and the substrate 49 were completed by performing a treatment for 15 minutes in an oven in a nitrogen atmosphere at 120 ° C. Before the complete bonding, whether or not the electrical connection is insufficient may be tested by the method disclosed in Japanese Patent Application Laid-Open No. 7-14880, and then the final bonding method may be adopted. (FIG. 5 (B))

The substrate thus treated was left in a gas flow of a mixed gas of fluorine trichloride (ClF 3) and nitrogen.
The flow rates of fluorine trichloride and nitrogen were both 500 sccm. The reaction pressure was 1 to 10 Torr. The temperature was room temperature. It is known that fluorine halide such as fluorine trichloride has a property of selectively etching silicon. On the other hand, oxides (silicon oxide or ITO) are hardly etched, and aluminum is not etched because a reaction stops at that stage if a stable oxide film is formed on the surface.

In this embodiment, the materials which can be attacked by chlorine trifluoride include the release layer (silicon) 32, silicon islands 34 and 35, gate electrodes 37 and 38, aluminum alloy wirings 41 to 44, Although the agent 51 is a material other than the release layer and the adhesive, the material such as silicon oxide exists outside, and chlorine trifluoride cannot reach the agent. Actually, as shown in FIG. 5C, only the peeling layer 32 was selectively etched, and the holes 52 were formed. (FIG. 5
(C))

Further, after the lapse of time, the peeling layer was completely etched, the bottom surface 53 of the underlying film was exposed, and the stick crystal substrate 31 could be separated from the semiconductor circuit. In the etching with fluorine trichloride, the etching was stopped at the bottom surface of the base film, so that the bottom surface 53 was extremely flat. (FIG. 5D) Thus, the formation of the semiconductor integrated circuit over one substrate of the liquid crystal display device is completed. Using the substrate thus obtained, a liquid crystal display device is completed.

[Embodiment 2] This embodiment relates to a method (roll-to-roll method) for continuously forming a film-shaped passive matrix type liquid crystal display device.
FIG. 6 shows a production system according to the present embodiment. As a substrate material for obtaining a film-shaped liquid crystal display device, a material selected from PES (polyethylene sulfil), PC (polycarbonate), and polyimide may be used. P
Since ET (polyethylene terephthalate) and PEN (polyethylene naphthalate) are polycrystalline plastics, they are not suitable for use as a liquid crystal material for displaying, in particular, polarized light.

In the system shown in FIG. 6, as a substrate constituting the liquid crystal electro-optical device, a flow for producing a substrate provided with a color filter (lower side in the figure) and a flow for producing the opposite substrate (upper side in the figure) ). First, a manufacturing process of the color filter side substrate will be described.

On the film wound around the roll 71, three color filters of RGB are formed on the surface by a printing method. The formation of the color filters is performed by three sets of rolls 72. This step is unnecessary when the liquid crystal display device to be manufactured is monochrome. (Process "color filter printing")

Further, an overcoat agent (flattening film) is formed by a roll 73 using a printing method. The overcoat agent is for flattening the uneven surface due to the formation of the color filter. As a material constituting the overcoat agent, a resin material having a light transmitting property may be used. (Step “Printing Overcoat Agent (Planarization Film)”) Next, using the roll 74, a row (column) electrode is formed in a required pattern by a printing method. The formation of the electrodes by this printing method is performed using a conductive ink.
(Process "electrode formation")

Further, an alignment film is formed by a printing method using a roll 75 (step “alignment film printing”), and is passed through a heating furnace 76 to harden the alignment film. (Step “Firing of Alignment Film”) Further, a rubbing treatment is performed on the surface of the alignment film by passing through a roll 77. Thus, the alignment process is completed. (Process "rubbing")

Next, the stick crystal is mounted on the substrate by the pressure bonding device 78 (step "stick mounting"), and the adhesive is hardened by passing through the heating furnace 79 to complete the bonding. (Process “Adhesive curing”) In this example, silicon was used for the release layer in the same manner as in Example 1, and then, the fluorine trichloride chamber 80 (differential pressure exhaust was performed, and fluorine trichloride leaked to the outside) The release layer is etched by the
Peel off the stick crystal substrate. (Process "stick peeling")

Thereafter, spacers are scattered on the film substrate by the spacer scatterer 81 (step "spacer scatter"), and a sealing material is formed by a printing method using the roll 82. The sealant is for bonding the opposing substrates together and for preventing the liquid crystal from leaking out between the pair of substrates. In the present embodiment, the thickness of the semiconductor circuit is made smaller than that between the liquid crystal substrates so that the outside of the semiconductor integrated circuit is sealed as shown in FIG. 3 (disclosed in JP-A-5-66413). Is).
(Process "Seal printing")

Thereafter, the liquid crystal is dropped using the liquid crystal dropping device 83 to form a liquid crystal layer on the film substrate.
Thus, the color filter side substrate is completed. The above-described process proceeds continuously as each roll rotates. Next, a manufacturing process of the counter substrate will be described. Roll 6
A column (row) electrode is formed in a predetermined pattern by a roll 62 on the film substrate fed from 1. (Step “electrode formation”) Further, an alignment film is formed by a printing method using a roll 63 (step “alignment film printing”), and is passed through a heating furnace 64 to harden the alignment film. (Step "Firing the alignment film")

After that, the film substrate is passed through a roll 65 to perform an orientation treatment. (Step “rubbing”) Next, the stick crystal is mounted on the substrate by the pressure bonding device 66 (step “stick mounting”), and the adhesive is cured by passing through the heating furnace 67. (Process “Adhesive curing”) Further, the stick crystal substrate is peeled off by the fluorine trichloride chamber 68. (Process "stick peeling")

The film substrate that has undergone the above processing is a roll 6
9, and is sent to the next roll 84. Roll 84
Then, the color filter-side substrate and the counter substrate are attached to form a cell. (Step “Cell Set”) Thereafter, the sealing material is cured by heating in a heating furnace 85, and the bonding of the substrates is completed.
(Step “curing of the sealant”) Further, the film is cut into a predetermined size by the cutter 86 to complete the film-shaped liquid crystal display device. (Process "Segmentation")

[0047]

According to the present invention, various variations are possible for the type, thickness and size of the substrate of the display device. For example, as shown in Embodiment 2, an extremely thin film liquid crystal display device can be obtained. In this case, the display device may be attached to a curved surface.
Furthermore, as a result of the restriction on the type of substrate being relaxed, a light-weight and highly impact-resistant material such as a plastic substrate can be used, and portability is also improved.

Further, since the area occupied by the driver circuit is small, the degree of freedom in the arrangement of the display device and other devices is increased. Typically, since the driver circuit can be pushed into an area having a width of several mm around the display surface, the display device itself is a very simple and fashionable product. The range of application is variously expanded, and therefore, the industrial value of the present invention is extremely high.

[Brief description of the drawings]

FIG. 1 shows a cross-sectional structure of the present invention.

FIG. 2 shows an outline of a method for manufacturing a display device of the present invention.

FIG. 3 shows a cross-sectional structure of a display device according to an example of the present invention.

FIG. 4 shows a process for producing a stick crystal used in the present invention.

FIG. 5 shows a step of bonding a stick crystal to a substrate.

FIG. 6 shows a continuous manufacturing system for a film liquid crystal display.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Substrate of liquid crystal display device 2 ... Semiconductor integrated circuit 3 ... Adhesive 4 ... Electrode of liquid crystal display device 5 ... Electrode of semiconductor integrated circuit 6 ... Bump 7 ... Driver Circuit portion 8 Matrix portion 9 Conductive particles 11 Base film 12 N-channel TFT 13 P-channel TFT 14 Interlayer insulator 15 Passivation film Reference Signs List 16: Counter substrate of liquid crystal display device 17: Sealant 18: Liquid crystal material 21: Substrate forming stick crystal 22: Semiconductor integrated circuit 23, 24 Stick crystal 25, 27 Liquid crystal Substrate of display device 26, 28 Surface on which wiring pattern is formed 29, 30 Driver circuit 26 transferred onto substrate of liquid crystal display device ... Form of wiring pattern Surface opposite to the surface formed 31 ... Stick crystal forming substrate 32 ... Release layer 33 ... Under film 34,35 Silicon island 36 ... Gate insulating film 37,38 Gate electrode 39 ... N-type region 40 ... P-type region 41 ... Interlayer insulator 42-44 Aluminum alloy wiring 46 ... Passivation film 47 ... Conductive oxide film 48 ... Bump 49 ... · Liquid crystal display device substrate 50 ··· Liquid crystal display device electrode 51 · · · Adhesive 52 · · · Voids 53 · · · Bottom surface of base film

Claims (5)

[Claims] 1. A semiconductor integrated circuit provided over a flexible substrate, wherein the semiconductor integrated circuit includes a thin film transistor. 2. The semiconductor integrated circuit according to claim 1, wherein said substrate is made of a resin. 3. The semiconductor integrated circuit according to claim 2, wherein any one of polyethylene salfile, polycarbonate, polyimide, polyethylene terephthalate, and polyethylene naphthalate is used as the resin. 4. The semiconductor integrated circuit according to claim 1, wherein a crystal structure of the thin film transistor is crystalline. 5. A matrix display device using the semiconductor integrated circuit according to any one of claims 1 to 4.