JP2001055487A - Encapsulant for flip chip type semiconductor device and flip chip type semiconductor device - Google Patents
Encapsulant for flip chip type semiconductor device and flip chip type semiconductor deviceInfo
- Publication number
- JP2001055487A JP2001055487A JP2000165448A JP2000165448A JP2001055487A JP 2001055487 A JP2001055487 A JP 2001055487A JP 2000165448 A JP2000165448 A JP 2000165448A JP 2000165448 A JP2000165448 A JP 2000165448A JP 2001055487 A JP2001055487 A JP 2001055487A
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- weight
- epoxy resin
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- parts
- inorganic filler
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Epoxy Resins (AREA)
- Silicon Polymers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板の配線パター
ン面に複数個のバンプを介して半導体チップが搭載され
たフリップチップ型半導体装置の封止材及びこの封止材
にて封止されたフリップチップ型半導体装置に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sealing material for a flip-chip type semiconductor device in which a semiconductor chip is mounted on a wiring pattern surface of a substrate via a plurality of bumps, and the sealing material is used for sealing. The present invention relates to a flip-chip type semiconductor device.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】電気機
器の小型、軽量化、高機能化に伴い、半導体の実装方法
もピン挿入タイプから表面実装が主流になっている。そ
して、ベアチップ実装の一つにフリップチップ（ＦＣ）
実装がある。ＦＣ実装とは、ＬＳＩチップの配線パター
ン面に高さ１０〜１００μｍ程度のバンプといわれる電
極を数個から数千個形成し、基板の電極を導電ペースト
或いは半田等で接合する方式である。このため、ＦＣの
封止保護に用いる封止材料は基板とＬＳＩチップのバン
プによる数１０μｍ程度の隙間に浸透させる必要があ
る。従来のフリップチップ用アンダーフィル材として使
用される液状エポキシ樹脂組成物は、エポキシ樹脂と硬
化剤及び無機質充填剤を配合し、信頼性を高めるために
半導体のチップや基板、バンプと線膨張係数を一致させ
るため多量の無機質充填剤を配合する処方が主流となっ
てきている。2. Description of the Related Art With the miniaturization, weight reduction, and enhancement of functions of electric equipment, semiconductor mounting methods have become the mainstream from pin insertion type to surface mounting. And one of bare chip mounting is flip chip (FC)
There is an implementation. FC mounting is a method in which several to thousands of electrodes called bumps having a height of about 10 to 100 μm are formed on the wiring pattern surface of an LSI chip, and the electrodes on the substrate are joined by a conductive paste or solder. For this reason, it is necessary that the sealing material used for sealing protection of the FC penetrates into a gap of about several tens of μm between the substrate and the bump of the LSI chip. The liquid epoxy resin composition used as the conventional underfill material for flip chips is composed of an epoxy resin, a hardener and an inorganic filler. In order to make the same, a formulation in which a large amount of an inorganic filler is blended has become mainstream.
【０００３】しかし、このような充填剤を高充填したフ
リップチップ用アンダーフィル材においては、応力特性
においては何ら問題はなくなってきているが、一方では
充填剤の高充填化により粘度が高くなり、更にチキソ性
が上昇し、チップと基板の隙間に侵入する速度が著しく
低下し、生産性が非常に悪くなるといった問題点が提示
されており、この問題点の改善が望まれる。However, in the underfill material for a flip chip which is highly filled with such a filler, there is no longer any problem with respect to the stress characteristics, but on the other hand, the viscosity increases due to the increased filling of the filler. Further, there is a problem that the thixotropy is increased, the speed of entering the gap between the chip and the substrate is significantly reduced, and the productivity is extremely deteriorated. It is desired to improve this problem.
【０００４】即ち、従来は、フィラー表面とエポキシ樹
脂の親和性や接着強度を改善するためシランカップリン
グ剤のような表面改質剤を用いている。しかし、フィラ
ー量が少ない場合は何ら問題ないが、フィラーを高充填
したものは、単純にフィラーの表面改質材処理や表面改
質材の添加だけでは十分な特性が得られないのが現状で
ある。That is, conventionally, a surface modifier such as a silane coupling agent has been used to improve the affinity and adhesive strength between the filler surface and the epoxy resin. However, if the amount of filler is small, there is no problem.However, in the case of highly filled filler, sufficient properties cannot be obtained simply by treating the surface of the filler with a surface modifier or simply adding a surface modifier. is there.
【０００５】本発明は、上記事情に鑑みなされたもの
で、多量の無機質充填剤を配合しても、低粘度で隙間侵
入させることが可能でかつ信頼性の優れたフリップチッ
プ型半導体装置用封止材及びこの封止材で封止されたフ
リップチップ型半導体装置を提供することを目的とす
る。The present invention has been made in view of the above circumstances, and even when a large amount of an inorganic filler is blended, a low-viscosity sealing material for a flip-chip type semiconductor device which is capable of penetrating into gaps and has excellent reliability. It is an object to provide a stopper material and a flip-chip type semiconductor device sealed with the sealing material.
【０００６】[0006]
【課題を解決するための手段及び発明の実施の形態】本
発明者は、上記目的を達成するため鋭意検討を重ねた結
果、液状エポキシ樹脂１００重量部、硬化剤０〜８０重
量部に対し、（ｃ）下記平均組成式（１） ＨaＲbＳｉＯ(4-a-b)/2 （１） （但し式中、Ｒは置換又は非置換の一価炭化水素基、ａ
は０．００５〜０．２、ｂは１．８〜２．２、１．８０
５≦ａ＋ｂ≦２．３を満足する正数を示す。）で示され
るオルガノポリシロキサンのケイ素原子に結合した水素
原子（ＳｉＨ基）とアルケニル基含有エポキシ樹脂のア
ルケニル基との付加反応により得られる共重合体を上記
オルガノポリシロキサン単位が上記（ａ），（ｂ）成分
の合計量１００重量部に対して１〜１５重量部含まれる
ように配合し、かつ、無機質充填剤として比表面積（Ｂ
ＥＴ法、以下同じ）が４ｍ2／ｇ未満のものと４ｍ2／ｇ
以上のものを併用すること、この場合比表面積が４ｍ2
／ｇ以上の無機質充填剤は、下記一般式（２）又は
（３）で示されるアミノシラン又はオルガノシラザン化
合物で表面処理したものを使用すること、更に、これら
無機質充填剤は、上記（ａ），（ｂ），（ｃ）成分の合
計量１００重量部に対して合計で１００〜４００重量部
を配合すると共に、上記比表面積が４ｍ2／ｇ以上の微
細な無機質充填剤を全無機質充填剤中に５〜３０重量％
含有させることにより、このエポキシ樹脂組成物は、多
量の無機質充填剤を配合しても、低粘度で薄膜侵入特性
に優れており、フリップチップ型半導体装置用封止材と
して有効であり、この封止材を用いたフリップチップ型
半導体装置は非常に信頼性の高いものであることを見出
し、本発明をなすに至ったものである。Means for Solving the Problems and Embodiments of the Invention The present inventors have made intensive studies to achieve the above object, and as a result, based on 100 parts by weight of a liquid epoxy resin and 0 to 80 parts by weight of a curing agent, (c) the following average compositional formula (1) H a R b SiO (4-ab) / 2 (1) ( where Shikichu, R represents a substituted or unsubstituted monovalent hydrocarbon radical, a
Is 0.005 to 0.2, b is 1.8 to 2.2, 1.80
Indicates a positive number satisfying 5 ≦ a + b ≦ 2.3. The copolymer obtained by the addition reaction of the hydrogen atom (SiH group) bonded to the silicon atom of the organopolysiloxane and the alkenyl group of the alkenyl group-containing epoxy resin is represented by the above-mentioned (a), (B) It is blended so as to be contained in an amount of 1 to 15 parts by weight based on 100 parts by weight of the total amount of the components, and has a specific surface area (B) as an inorganic filler.
ET method, hereinafter the same) that is less than 4m 2 / g and 4m 2 / g
Use the above materials together, in this case, the specific surface area is 4 m 2
/ G or more of the inorganic filler used is a surface-treated with an aminosilane or an organosilazane compound represented by the following general formula (2) or (3). A total of 100 to 400 parts by weight is blended with respect to 100 parts by weight of the total amount of the components (b) and (c), and the above-mentioned fine inorganic filler having a specific surface area of 4 m 2 / g or more is contained in all inorganic fillers. 5-30% by weight
By containing the epoxy resin composition, even if a large amount of an inorganic filler is blended, the epoxy resin composition has low viscosity and excellent thin film penetration properties, and is effective as a sealing material for flip-chip type semiconductor devices. The present inventors have found that a flip-chip type semiconductor device using a stopper is very reliable, and have accomplished the present invention.
【０００７】[0007]
【化２】 （但し各式中、Ｒ1は同一又は異種の炭素数１〜４のア
ルキル基、ビニル基又はフェニル基、Ｒ2は水素原子又
はＲ1、ｍは０〜４の整数である。）Embedded image (However, in each formula, R 1 is the same or different and is an alkyl group having 1 to 4 carbon atoms, a vinyl group or a phenyl group, R 2 is a hydrogen atom or R 1 , and m is an integer of 0 to 4.)
【０００８】即ち、本発明は、 （ａ）液状エポキシ樹脂：
１００重量部、 （ｂ）硬化剤：
０〜８０重量部、 （ｃ）下記平均組成式（１） ＨaＲbＳｉＯ(4-a-b)/2 （１） （但し式中、Ｒは置換又は非置換の一価炭化水素基、ａ
は０．００５〜０．２、ｂは１．８〜２．２、１．８０
５≦ａ＋ｂ≦２．３を満足する正数を示す。）で示され
るオルガノポリシロキサンのケイ素原子に結合した水素
原子とアルケニル基含有エポキシ樹脂のアルケニル基と
の付加反応により得られる共重合体：上記オルガノポリ
シロキサン単位が上記（ａ），（ｂ）成分の合計量１０
０重量部に対して１〜１５重量部含まれる量、 （ｄ）比表面積が４ｍ2／ｇ未満の無機質充填剤：
５０〜３５０重量部、 （ｅ）下記一般式（２）又は（３）で示されるアミノシ
ラン又はオルガノシラザン化合物で表面処理された比表
面積が４ｍ2／ｇ以上の微細な無機質充填剤：５〜１２
０重量部 を含有し、（ｄ），（ｅ）成分の無機質充填剤が（ａ）
液状エポキシ樹脂、（ｂ）硬化剤、（ｃ）共重合体の合
計量１００重量部に対して合計で１００〜４００重量部
含有されていることを特徴とするフリップチップ型半導
体装置用封止材、及びこの封止材の硬化物にて封止され
たフリップチップ型半導体装置を提供する。That is, the present invention provides: (a) a liquid epoxy resin:
100 parts by weight, (b) curing agent:
0-80 parts by weight, (c) the following average compositional formula (1) H a R b SiO (4-ab) / 2 (1) ( where Shikichu, R represents a substituted or unsubstituted monovalent hydrocarbon radical, a
Is 0.005 to 0.2, b is 1.8 to 2.2, 1.80
Indicates a positive number satisfying 5 ≦ a + b ≦ 2.3. A) a copolymer obtained by an addition reaction between a hydrogen atom bonded to a silicon atom of an organopolysiloxane and an alkenyl group of an alkenyl group-containing epoxy resin represented by the following formula: wherein the organopolysiloxane unit is the above component (a) or (b) Total amount of 10
(D) an inorganic filler having a specific surface area of less than 4 m 2 / g:
50 to 350 parts by weight, (e) a fine inorganic filler having a specific surface area of at least 4 m 2 / g, which is surface-treated with an aminosilane or an organosilazane compound represented by the following general formula (2) or (3): 5 to 12
0 parts by weight, and the inorganic filler of the components (d) and (e) is (a)
A sealing material for a flip-chip type semiconductor device, comprising 100 to 400 parts by weight in total with respect to 100 parts by weight in total of a liquid epoxy resin, (b) a curing agent, and (c) a copolymer. And a flip-chip type semiconductor device sealed with a cured product of the sealing material.
【０００９】[0009]
【化３】 （但し各式中、Ｒ1は同一又は異種の炭素数１〜４のア
ルキル基、ビニル基又はフェニル基、Ｒ2は水素原子又
はＲ1、ｍは０〜４の整数である。）Embedded image (However, in each formula, R 1 is the same or different and is an alkyl group having 1 to 4 carbon atoms, a vinyl group or a phenyl group, R 2 is a hydrogen atom or R 1 , and m is an integer of 0 to 4.)
【００１０】以下、本発明について更に詳しく述べる。
本発明のフリップチップ型半導体装置用封止材（エポキ
シ樹脂組成物）において、（ａ）成分の液状のエポキシ
樹脂は、１分子中に２個以上のエポキシ基があればいか
なるものでも使用可能であるが、特に、ビスフェノール
Ａ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂等
のビスフェノール型エポキシ樹脂、フェノールノボラッ
ク型エポキシ樹脂、クレゾールノボラック型エポキシ樹
脂等のノボラック型エポキシ樹脂、ナフタレン型エポキ
シ樹脂、ビフェニル型エポキシ樹脂、シクロペンタジエ
ン型エポキシ樹脂などが例示される。この中でも室温
（２５℃）で液状のエポキシ樹脂を使用する。これらの
エポキシ樹脂には下記構造で示されるエポキシ樹脂を浸
入性に影響を及ぼさない範囲で添加しても何ら問題はな
い。Hereinafter, the present invention will be described in more detail.
In the sealing material (epoxy resin composition) for a flip-chip type semiconductor device of the present invention, any liquid epoxy resin as the component (a) can be used as long as it has two or more epoxy groups in one molecule. Among them, in particular, bisphenol type epoxy resins such as bisphenol A type epoxy resin and bisphenol F type epoxy resin, novolak type epoxy resins such as phenol novolak type epoxy resin, cresol novolak type epoxy resin, naphthalene type epoxy resin and biphenyl type epoxy resin And cyclopentadiene type epoxy resins. Among them, an epoxy resin liquid at room temperature (25 ° C.) is used. There is no problem even if an epoxy resin having the following structure is added to these epoxy resins within a range that does not affect the infiltration property.
【００１１】[0011]
【化４】 Embedded image
【００１２】上記液状エポキシ樹脂中の全塩素含有量
は、１，５００ｐｐｍ以下、望ましくは１，０００ｐｐ
ｍ以下であることが好ましい。また、１００℃で５０％
エポキシ樹脂濃度における２０時間での抽出水塩素が１
０ｐｐｍ以下であることが好ましい。全塩素含有量が
１，５００ｐｐｍを超え、抽出水塩素が１０ｐｐｍを超
えると半導体素子の信頼性、特に耐湿性に悪影響を与え
るおそれがある。The total chlorine content in the liquid epoxy resin is 1,500 ppm or less, preferably 1,000 pp
m or less. 50% at 100 ° C
Extraction water chlorine in 20 hours at epoxy resin concentration is 1
It is preferably at most 0 ppm. If the total chlorine content exceeds 1,500 ppm and the amount of chlorine in the extracted water exceeds 10 ppm, the reliability of the semiconductor element, particularly, the moisture resistance may be adversely affected.
【００１３】上記エポキシ樹脂は、自己重合型である場
合、後述する硬化促進剤を用いることで単独でも硬化さ
せることができるが、必要によって硬化剤を配合するこ
とができる。硬化剤として例えば、テトラヒドロ無水フ
タル酸、メチルテトラヒドロ無水フタル酸、メチルヘキ
サヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、無
水メチルハイミック酸、ピロメリット酸二無水物、ベン
ゾフェノンテトラカルボン酸二無水物、３，３’，４，
４’−ビフェニルテトラカルボン酸二無水物、ビス
（３，４−ジカルボキシフェニル）エーテル二無水物、
ビス（３，４−ジカルボキシフェニル）メタン二無水
物、２，２−ビス（３，４−ジカルボキシフェニル）プ
ロパン二無水物などの、好ましくは分子中に脂肪族環又
は芳香族環を１個又は２個有すると共に、酸無水物基を
１個又は２個有する、炭素原子数４〜２５個、好ましく
は８〜２０個程度の酸無水物や、ジシアンジアミド、ア
ジピン酸ヒドラジド、イソフタル酸ヒドラジドなどのカ
ルボン酸ヒドラジドを使用することができる。When the epoxy resin is of a self-polymerizing type, it can be cured alone by using a curing accelerator described later, but a curing agent can be blended if necessary. As the curing agent, for example, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, methylhymic anhydride, pyromellitic dianhydride, benzophenonetetracarboxylic dianhydride, 3 , 3 ', 4,
4′-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride,
Preferably, one molecule of an aliphatic or aromatic ring such as bis (3,4-dicarboxyphenyl) methane dianhydride or 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride is present in the molecule. Acid anhydride having one or two and one or two acid anhydride groups, and having 4 to 25, preferably about 8 to 20 carbon atoms, dicyandiamide, adipic hydrazide, isophthalic hydrazide and the like. Can be used.
【００１４】上記硬化剤の配合量は、エポキシ樹脂１０
０重量部に対して０〜８０重量部である。なお、酸無水
物を硬化剤として用いる場合は、エポキシ樹脂中のエポ
キシ基１モルに対し、硬化剤中の酸無水物基（即ち、−
ＣＯ−Ｏ−ＣＯ−基）の比を０．３〜０．７モルの範囲
とすることが望ましい。０．３モル未満では硬化性が不
十分であり、０．７モルを超えると、未反応の酸無水物
が残存し、ガラス転移温度の低下となるおそれがある。
より望ましくは０．４〜０．６モルの範囲である。The compounding amount of the above curing agent is 10
0 to 80 parts by weight with respect to 0 parts by weight. When an acid anhydride is used as the curing agent, the acid anhydride group in the curing agent (ie,-
It is desirable that the ratio of (CO—O—CO— group) be in the range of 0.3 to 0.7 mol. If it is less than 0.3 mol, the curability is insufficient, and if it exceeds 0.7 mol, unreacted acid anhydride remains and the glass transition temperature may be lowered.
More preferably, it is in the range of 0.4 to 0.6 mol.
【００１５】本発明には、硬化促進剤を配合することが
好ましい。硬化促進剤としては公知のものを使用するこ
とができる。具体的には、イミダゾール誘導体、３級ア
ミン化合物、有機リン系化合物から選ばれる１種又は２
種以上を配合することができる。ここで、イミダゾール
誘導体としては、２−メチルイミダゾール、２−エチル
イミダゾール、４−メチルイミダゾール、４−エチルイ
ミダゾール、２−フェニルイミダゾール、２−フェニル
−４−メチルイミダゾール、２−フェニル−４−ヒドロ
キシメチルイミダゾール、２−エチル−４−メチルイミ
ダゾール、１−シアノエチル−２−メチルイミダゾー
ル、２−フェニル−４−メチル−５−ヒドロキシメチル
イミダゾール、２−フェニル−４，５−ジヒドロキシメ
チルイミダゾール等が挙げられる。また、３級アミン化
合物としては、トリエチルアミン、ベンジルトリメチル
アミン、α−メチルベンジルジメチルアミン等の窒素原
子に結合する置換基としてアルキル基やアラルキル基を
有するアミン化合物、１，８−ジアザヒシクロ［５．
４．０］ウンデセン−７及びそのフェノール塩、オクチ
ル酸塩、オレイン酸塩などのシクロアミジン化合物やそ
の有機酸との塩、或いは下記式の化合物などのシクロア
ミジン化合物と４級ホウ素化合物との塩又は錯塩などが
挙げられる。In the present invention, it is preferable to add a curing accelerator. Known curing accelerators can be used. Specifically, one or two selected from imidazole derivatives, tertiary amine compounds, and organic phosphorus compounds
More than one species can be blended. Here, as the imidazole derivative, 2-methylimidazole, 2-ethylimidazole, 4-methylimidazole, 4-ethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4-hydroxymethyl Imidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole and the like. Examples of the tertiary amine compound include amine compounds having an alkyl group or an aralkyl group as a substituent bonded to a nitrogen atom, such as triethylamine, benzyltrimethylamine, and α-methylbenzyldimethylamine, and 1,8-diazacyclo [5.
4.0] Undecen-7 and cycloamidine compounds such as phenol salts, octylates, oleates and salts thereof with organic acids, or salts of cycloamidine compounds such as compounds of the following formulas with quaternary boron compounds Or a complex salt.
【００１６】[0016]
【化５】 Embedded image
【００１７】また、有機リン系化合物としては、トリフ
ェニルホスフィン等のトリオルガノホスフィン化合物や
テトラフェニルホスホニウムテトラフェニルボレート等
の４級ホスホニウム塩などが挙げられる。Examples of the organic phosphorus compounds include triorganophosphine compounds such as triphenylphosphine and quaternary phosphonium salts such as tetraphenylphosphonium tetraphenylborate.
【００１８】硬化促進剤の配合量は、上記エポキシ樹脂
１００重量部に対して０〜１０重量部、通常は、０．０
１〜１０重量部、望ましくは０．５〜５重量部である。
０．０１重量部より少ないと硬化性が低下する場合があ
り、１０重量部より多いと硬化性に優れるが、保存性が
低下する傾向となる。The curing accelerator is used in an amount of 0 to 10 parts by weight, usually 0.0
It is 1 to 10 parts by weight, preferably 0.5 to 5 parts by weight.
If the amount is less than 0.01 part by weight, the curability may decrease. If the amount is more than 10 parts by weight, the curability is excellent, but the storage stability tends to decrease.
【００１９】本発明には、（ｃ）成分として、下記平均
組成式（１） ＨaＲbＳｉＯ(4-a-b)/2 （１） （但し式中、Ｒは置換又は非置換の一価炭化水素基、ａ
は０．００５〜０．２、ｂは１．８〜２．２、１．８０
５≦ａ＋ｂ≦２．３、好ましくはａは０．０１〜０．
１、ｂは１．９〜２．０、１．９１≦ａ＋ｂ≦２．１を
満足する正数を示す。）で示されるオルガノポリシロキ
サン（即ち、オルガノハイドロジェンポリシロキサン）
のケイ素原子に結合した水素原子（ＳｉＨ基）とアルケ
ニル基含有エポキシ樹脂のアルケニル基との付加反応に
より得られる共重合体を配合する。[0019] The present invention, as component (c), the following average compositional formula (1) H a R b SiO (4-ab) / 2 (1) ( where Shikichu, R represents a substituted or unsubstituted monovalent Hydrocarbon group, a
Is 0.005 to 0.2, b is 1.8 to 2.2, 1.80
5 ≦ a + b ≦ 2.3, preferably a is 0.01 to 0.5.
1 and b are positive numbers satisfying 1.9 to 2.0, 1.91 ≦ a + b ≦ 2.1. ) (Ie, organohydrogenpolysiloxane)
A copolymer obtained by an addition reaction between a hydrogen atom (SiH group) bonded to a silicon atom and an alkenyl group of an alkenyl group-containing epoxy resin is blended.
【００２０】ここで、共重合体の原料としてのアルケニ
ル基含有エポキシ樹脂としては、１分子中に少なくとも
１個、好ましくは２個以上の芳香族環に結合したグリシ
ジルオキシ基等のエポキシ基を有すると共に、少なくと
も１個、好ましくは２個以上のアルケニル基を有するも
のであれば種々のエポキシ樹脂を使用することができ、
例えば、下記式（４）〜（６）の構造のアルケニル基含
有エポキシ樹脂等が例示される。Here, the alkenyl group-containing epoxy resin as a raw material of the copolymer has at least one, preferably two or more epoxy groups such as a glycidyloxy group bonded to two or more aromatic rings in one molecule. In addition, various epoxy resins can be used as long as they have at least one, preferably two or more alkenyl groups,
For example, alkenyl group-containing epoxy resins having the structures of the following formulas (4) to (6) are exemplified.
【００２１】[0021]
【化６】 （上記各式においてＲ3は水素原子、メチル基又は臭素
原子、Ｒ4は水素原子、メチル基又はトリフルオロメチ
ル基であり、ｐ，ｑはそれぞれ自然数で、好ましくはｐ
＋ｑが２〜５０、より好ましくは２〜２０の整数であ
る。）Embedded image (In each of the above formulas, R 3 is a hydrogen atom, a methyl group or a bromine atom, R 4 is a hydrogen atom, a methyl group or a trifluoromethyl group, and p and q are natural numbers, preferably p
+ Q is an integer of 2 to 50, more preferably 2 to 20. )
【００２２】一方、上記オルガノポリシロキサン（１）
のケイ素原子の数は、１分子中に１０〜４００個、好ま
しくは２０〜４００個、特に４０〜２００個であること
が好ましく、また、ＳｉＨ基の数は１〜５個、より好ま
しくは２〜４個、特にはＳｉＨ基が２個であることが好
ましい。なお、式（１）において、Ｒの、ケイ素原子に
結合した置換又は非置換の一価炭化水素基としては、炭
素数１〜１０、特に１〜８のものが好ましく、また、脂
肪族不飽和結合を有さないものが好ましく、例えばメチ
ル基、エチル基、プロピル基、イソプロピル基、ブチル
基、イソブチル基、ｔｅｒｔ−ブチル基、ヘキシル基、
シクロヘキシル基、オクチル基、デシル基等のアルキル
基、ビニル基、アリル基、プロペニル基、ブテニル基、
ヘキセニル基等のアルケニル基、フェニル基、キシリル
基、トリル基等のアリール基、ベンジル基、フェニルエ
チル基、フェニルプロピル基等のアラルキル基などや、
これらの炭化水素基の水素原子の一部又は全部を塩素、
フッ素、臭素等のハロゲン原子で置換したクロロメチル
基、ブロモエチル基、トリフルオロプロピル基等のハロ
ゲン置換一価炭化水素基を挙げることができる。On the other hand, the organopolysiloxane (1)
Is preferably 10 to 400, preferably 20 to 400, and particularly preferably 40 to 200 in one molecule, and the number of SiH groups is 1 to 5, more preferably 2 to 2. It is preferable that the number of SiH groups is 2 to 4, particularly 2. In the formula (1), the substituted or unsubstituted monovalent hydrocarbon group of R bonded to a silicon atom preferably has 1 to 10 carbon atoms, particularly 1 to 8 carbon atoms. Those having no bond are preferable, for example, methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, tert-butyl group, hexyl group,
Cyclohexyl group, octyl group, alkyl group such as decyl group, vinyl group, allyl group, propenyl group, butenyl group,
Alkenyl group such as hexenyl group, phenyl group, xylyl group, aryl group such as tolyl group, benzyl group, phenylethyl group, aralkyl group such as phenylpropyl group,
Some or all of the hydrogen atoms of these hydrocarbon groups are chlorine,
Examples include a halogen-substituted monovalent hydrocarbon group such as a chloromethyl group, a bromoethyl group, and a trifluoropropyl group substituted with a halogen atom such as fluorine and bromine.
【００２３】このようなオルガノハイドロジェンポリシ
ロキサンとしては、両末端トリメチルシロキシ基封鎖メ
チルハイドロジェンポリシロキサン、両末端トリメチル
シロキシ基封鎖ジメチルシロキサン・メチルハイドロジ
ェンシロキサン共重合体、両末端ジメチルハイドロジェ
ンシロキシ基封鎖ジメチルポリシロキサン、両末端ジメ
チルハイドロジェンシロキシ基封鎖ジメチルシロキサン
・メチルハイドロジェンシロキサン共重合体、両末端ジ
メチルハイドロジェンシロキシ基封鎖ジメチルシロキサ
ン・ジフェニルシロキサン共重合体、両末端ジメチルハ
イドロジェンシロキシ基封鎖ジメチルシロキサン・メチ
ルフェニルシロキサン共重合体などの基本的に直鎖状構
造のものが挙げられるが、これらは一部に分岐状のシロ
キサン構造を含んだものであってもよい。Examples of such organohydrogenpolysiloxane include methylhydrogenpolysiloxane having trimethylsiloxy groups at both ends, dimethylsiloxane / methylhydrogensiloxane copolymer having trimethylsiloxy groups at both ends, and dimethylhydrogensiloxy group at both ends. Blocked dimethylpolysiloxane, dimethylhydrogensiloxy group-terminated dimethylsiloxane / methylhydrogensiloxane copolymer, dimethylhydrogensiloxy group-blocked dimethylsiloxane / diphenylsiloxane copolymer at both ends, dimethylhydrogensiloxy group-blocked dimethyl at both ends Basically, those having a linear structure such as a siloxane / methylphenylsiloxane copolymer may be mentioned, but these partially include a branched siloxane structure. It may be the one.
【００２４】上記のオルガノポリシロキサンの分子量
は、特に限定されるものではないが、７００〜５０，０
００が望ましい。これはオルガノポリシロキサンの分子
量が７００〜５０，０００である場合、得られた共重合
体をエポキシ樹脂組成物に配合すると、マトリックス中
に共重合体が相溶せず、かつ微細な海島構造を形成する
ためである。分子量が７００未満であるとマトリックス
中に共重合体が相溶し、海島構造が消滅し、分子量が５
０，０００より大きければ海島構造が大きくなってしま
い、いずれの場合も、低粘度性、薄膜侵入性が低下する
場合がある。The molecular weight of the above-mentioned organopolysiloxane is not particularly limited, but is 700 to 50,0.
00 is desirable. This is because, when the molecular weight of the organopolysiloxane is 700 to 50,000, when the obtained copolymer is blended with the epoxy resin composition, the copolymer is not compatible with the matrix and a fine sea-island structure is formed. It is for forming. If the molecular weight is less than 700, the copolymer is compatible in the matrix, the sea-island structure disappears, and the molecular weight is 5
If it is larger than 000, the sea-island structure becomes large, and in any case, the low viscosity and the infiltration of the thin film may be reduced.
【００２５】上記アルケニル基含有エポキシ樹脂とオル
ガノハイドロジェンポリシロキサンとを反応させて共重
合体を得る方法としては、エポキシ樹脂中のアルケニル
基とオルガノハイドロジェンポリシロキサン中の珪素原
子結合水素原子（即ち、ＳｉＨ基）とを、いわゆるハイ
ドロサイレーション反応として公知の付加反応を採用す
ることができる。As a method for obtaining a copolymer by reacting the above alkenyl group-containing epoxy resin with an organohydrogenpolysiloxane, an alkenyl group in the epoxy resin and a silicon-bonded hydrogen atom in the organohydrogenpolysiloxane (ie, , SiH groups) can be employed as an addition reaction known as a so-called hydrosilation reaction.
【００２６】上記ブロック共重合体としては、例えば特
公昭６１−４８５４４号、特公昭６３−６００６９号公
報等に記載の公知のものが使用し得、その一例を挙げる
と下記のものが挙げられる。As the above-mentioned block copolymer, for example, known ones described in JP-B-61-48544 and JP-B-63-60069 can be used, and examples thereof include the following.
【００２７】[0027]
【化７】 Embedded image
【００２８】[0028]
【化８】 （上記式中、Ｒ及びＲ4は上記と同じ、Ｒ11は水素原子
又は炭素数１〜４のアルキル基、Ｒ12は−ＣＨ2ＣＨ2Ｃ
Ｈ2−、−ＯＣＨ2−ＣＨ（ＯＨ）−ＣＨ2−Ｏ−ＣＨ2Ｃ
Ｈ2ＣＨ2−又は−Ｏ−ＣＨ2ＣＨ2ＣＨ2−である。ｎは
４〜１９９、好ましくは１９〜９９の整数、ｐは１〜１
０の整数、ｑは１〜１０の整数である。）Embedded image (In the above formula, R and R 4 are the same as above, R 11 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 12 is —CH 2 CH 2 C
H 2 —, —OCH 2 —CH (OH) —CH 2 —O—CH 2 C
H 2 CH 2 — or —O—CH 2 CH 2 CH 2 —. n is an integer of 4 to 199, preferably 19 to 99, and p is 1 to 1.
An integer of 0 and q is an integer of 1 to 10. )
【００２９】上記共重合体は、上記オルガノポリシロキ
サン単位が液状エポキシ樹脂（ａ）と硬化剤（ｂ）の合
計量１００重量部に対して１〜１５重量部、好ましくは
２〜１０重量部含まれるように配合する。１重量部より
少ないとシリカとのぬれ性に乏しく、組成物のチキソ性
が高くなり侵入性が低下することとなり、１５重量部よ
り多いと組成物の粘度が高くなり、やはり侵入性が低下
する。The copolymer contains the organopolysiloxane unit in an amount of 1 to 15 parts by weight, preferably 2 to 10 parts by weight, based on 100 parts by weight of the total amount of the liquid epoxy resin (a) and the curing agent (b). To be blended. If the amount is less than 1 part by weight, the wettability with silica is poor, the thixotropy of the composition is increased, and the penetration is reduced. If the amount is more than 15 parts by weight, the viscosity of the composition is increased, and the penetration is also decreased. .
【００３０】なお、本発明には、上記共重合体に加え、
応力を低下させる目的でシリコーンゴム、シリコーンオ
イルや液状のポリブタジエンゴム、メタクリル酸メチル
−ブタジエン−スチレン共重合体といった熱可塑性樹脂
などを配合してもよい。In the present invention, in addition to the above copolymer,
For the purpose of reducing the stress, a thermoplastic resin such as silicone rubber, silicone oil, liquid polybutadiene rubber, or methyl methacrylate-butadiene-styrene copolymer may be blended.
【００３１】一方、無機質充填剤としては、膨張係数を
小さくする目的から、従来より知られている各種の無機
質充填剤を添加することができる。具体的に無機質充填
剤としては、溶融シリカ、結晶シリカ、アルミナ、ボロ
ンナイトライド、窒化アルミ、窒化ケイ素、マグネシ
ア、マグネシウムシリケートなどが使用される。中でも
真球状の溶融シリカが低粘度化、高侵入性のため望まし
いものである。アンダーフィル部の封止材には、侵入性
の向上と低線膨張化の両立を図るためフリップチップギ
ャップ幅（基板と半導体チップとの隙間）に対して平均
粒径が約１／１０以下、最大粒径が１／２以下の充填剤
が望ましく、通常は最大粒径５０μｍ以下、望ましくは
２５μｍ以下、更に望ましくは１０μｍ以下である。平
均粒径は０．５〜１０μｍ、望ましくは０．５〜５μ
ｍ、より望ましくは０．８〜４μｍである。なお、この
平均粒径は、例えばレーザー光回折法による重量平均値
（又はメディアン径）等として求めることができる。On the other hand, as the inorganic filler, various kinds of conventionally known inorganic fillers can be added for the purpose of reducing the expansion coefficient. Specific examples of the inorganic filler include fused silica, crystalline silica, alumina, boron nitride, aluminum nitride, silicon nitride, magnesia, and magnesium silicate. Above all, spherical fused silica is desirable because of its low viscosity and high penetration. The sealing material of the underfill portion has an average particle size of about 1/10 or less with respect to the flip chip gap width (gap between the substrate and the semiconductor chip) in order to achieve both improvement in penetration and low linear expansion. A filler having a maximum particle size of 1/2 or less is desirable, and usually has a maximum particle size of 50 μm or less, preferably 25 μm or less, and more preferably 10 μm or less. Average particle size is 0.5 to 10 μm, preferably 0.5 to 5 μm
m, more preferably 0.8 to 4 μm. The average particle diameter can be determined, for example, as a weight average value (or median diameter) by a laser diffraction method.
【００３２】本発明においては、上記無機質充填剤とし
て、（ｄ）比表面積（ＢＥＴ吸着法による、以下同様）
が４ｍ2／ｇ未満（なお、その下限は通常０．５ｍ2／
ｇ、好ましくは１ｍ2／ｇである）の無機質充填剤と
（ｅ）比表面積が４ｍ2／ｇ以上（なお、その上限は通
常１５ｍ2／ｇ、好ましくは８ｍ2／ｇである）の無機質
充填剤とを併用する。In the present invention, (d) specific surface area (based on a BET adsorption method, hereinafter the same)
There 4m 2 / less than g (Note that the lower limit is usually 0.5 m 2 /
g, preferably 1 m 2 / g) and an inorganic filler (e) having a specific surface area of 4 m 2 / g or more (the upper limit is usually 15 m 2 / g, preferably 8 m 2 / g). Use in combination with filler.
【００３３】この場合、比表面積が４ｍ2／ｇ以上の通
常平均粒径が１μｍ以下の球状シリカは、比表面積が大
きすぎる（即ち、平均粒径が小さすぎる）ことから、こ
の種のシリカを配合したものは高粘度となり、本発明の
材料には多量に使用できないものである。しかし、式
（２）又は（３）のアミノシラン、オルガノシラザン化
合物から選ばれる１種又は２種以上の処理剤で微細なシ
リカのみを予め表面処理したものと他の充填剤を所定の
割合で混合し使用することで、従来得られなかった低シ
ェア領域での粘度を低下させることが可能となり、かつ
薄膜への侵入性も向上したものである。In this case, a spherical silica having a specific surface area of 4 m 2 / g or more and an average particle diameter of 1 μm or less has too large a specific surface area (ie, an average particle diameter is too small). The compounded product has a high viscosity and cannot be used in a large amount in the material of the present invention. However, a mixture obtained by preliminarily surface-treating only fine silica with one or two or more kinds of treating agents selected from aminosilanes and organosilazane compounds of formula (2) or (3) and another filler at a predetermined ratio. By using this, it is possible to reduce the viscosity in the low shear region, which has not been obtained conventionally, and the penetration into the thin film is improved.
【００３４】[0034]
【化９】 （但し各式中、Ｒ1は同一又は異種の炭素数１〜４のア
ルキル基、ビニル基又はフェニル基、Ｒ2は水素原子又
はＲ1、ｍは０〜４の整数である。）Embedded image (However, in each formula, R 1 is the same or different and is an alkyl group having 1 to 4 carbon atoms, a vinyl group or a phenyl group, R 2 is a hydrogen atom or R 1 , and m is an integer of 0 to 4.)
【００３５】ここで、一般式（２）で示されるアミノシ
ラン化合物としては、例えば、トリメチルシリルアミ
ン、トリエチルシリルアミン、ビニルジメチルシリルア
ミン、フェニルジメチルシリルアミン、（Ｎ−メチルア
ミノ）トリメチルシラン、（Ｎ−エチルアミノ）トリメ
チルシラン、（Ｎ，Ｎ−ジメチルアミノ）トリメチルシ
ラン、（Ｎ，Ｎ−ジエチルアミノ）トリメチルシラン、
（Ｎ，Ｎ−ジエチルアミノ）トリエチルシラン、（Ｎ，
Ｎ−ジエチルアミノ）ビニルジメチルシラン、（Ｎ，Ｎ
−ジエチルアミノ）フェニルジメチルシラン等の、非置
換アミノ基（−ＮＨ2基）又は低級アルキル置換アミノ
基（−ＮＨＲ’基又は−ＮＲ’2基、但し、Ｒ’はＣ1 〜
4の低級アルキル基）を有するトリオルガノアミノシラ
ン化合物を挙げることができる。Here, as the aminosilane compound represented by the general formula (2), for example, trimethylsilylamine, triethylsilylamine, vinyldimethylsilylamine, phenyldimethylsilylamine, (N-methylamino) trimethylsilane, (N- Ethylamino) trimethylsilane, (N, N-dimethylamino) trimethylsilane, (N, N-diethylamino) trimethylsilane,
(N, N-diethylamino) triethylsilane, (N, N-diethylamino) triethylsilane
(N-diethylamino) vinyldimethylsilane, (N, N
- diethylamino) such as phenyl dimethyl silane, unsubstituted amino group (-NH 2 group) or lower alkyl-substituted amino group (-NHR 'group or -NR' 2 group, provided that, R 'is C 1 ~
( A lower alkyl group of 4 ).
【００３６】また、一般式（３）で示されるオルガノシ
ラザン化合物としては、ヘキサメチルジシラザン、１，
３−ジビニルテトラメチルジシラザン、１，３−ジメチ
ルテトラビニルジシラザン、ヘキサビニルジシラザン、
１，３−ジフェニルテトラメチルジシラザン等のヘキサ
オルガノジシラザン、オクタメチルトリシラザン、１，
５−ジビニルヘキサメチルトリシラザン、１，１，５，
５−テトラビニル−テトラメチルトリシラザン、１，５
−ジフェニルヘキサメチルトリシラザン等のオクタオル
ガノトリシラザン、デカメチルテトラシラザン等のデカ
オルガノテトラシラザン、ドデカメチルペンタシラザン
等のドデカオルガノペンタシラザンなどのケイ素原子数
が２〜６個のシラザンオリゴマーを挙げることができ、
好ましくはヘキサオルガノジシラザンである。As the organosilazane compound represented by the general formula (3), hexamethyldisilazane,
3-divinyltetramethyldisilazane, 1,3-dimethyltetravinyldisilazane, hexavinyldisilazane,
Hexaorganodisilazane such as 1,3-diphenyltetramethyldisilazane, octamethyltrisilazane,
5-divinylhexamethyltrisilazane, 1,1,5
5-tetravinyl-tetramethyltrisilazane, 1,5
-Silazane oligomers having 2 to 6 silicon atoms, such as octaorganotrisilazane such as diphenylhexamethyltrisilazane, decaorganotetrasilazane such as decamethyltetrasilazane, and dodecaorganopentasilazane such as dodecamethylpentasilazane. Can be
Preferred is hexaorganodisilazane.
【００３７】なお、微細球状シリカとアミノシラン及び
／又はオルガノシラザンとの反応は公知であり、シリカ
に対し０．５〜５重量％のアミノシラン及び／又はオル
ガノシラザンをシリカに噴霧し、密閉した状態で５〜２
４時間放置した後、１２０℃の温度で５時間乾燥させて
行うことができる。The reaction of fine spherical silica with aminosilane and / or organosilazane is known, and 0.5 to 5% by weight of aminosilane and / or organosilazane with respect to silica is sprayed on silica and the silica is sealed. 5-2
After leaving for 4 hours, drying can be performed at a temperature of 120 ° C. for 5 hours.
【００３８】ここで、比表面積が４ｍ2／ｇ以上の無機
質充填剤は、このように式（２）又は（３）のアミノシ
ラン、オルガノシラザン化合物から選ばれる１種又は２
種以上の処理剤で表面処理したものを使用するが、比表
面積が４ｍ2／ｇ未満の無機質充填剤は、公知のシラン
カップリング剤（反応性官能基含有アルコキシシラン化
合物）や上記と同様のアミノシラン及び／又はオルガノ
シラザンなどで表面処理したものを用いることができ
る。Here, the inorganic filler having a specific surface area of 4 m 2 / g or more is one or two selected from the aminosilanes and organosilazane compounds of the formula (2) or (3).
The surface-treated with at least one kind of treating agent is used, and the inorganic filler having a specific surface area of less than 4 m 2 / g is a known silane coupling agent (reactive functional group-containing alkoxysilane compound) or the same as described above. Those surface-treated with aminosilane and / or organosilazane can be used.
【００３９】上記比表面積が４ｍ2／ｇ未満の無機質充
填剤（ｄ）の配合量は、エポキシ樹脂１００重量部に対
して５０〜３５０重量部、比表面積が４ｍ2／ｇ以上の
無機質充填剤（ｅ）の配合量は同５〜１２０重量部であ
り、かつエポキシ樹脂（ａ）、硬化剤（ｂ）、共重合体
（ｃ）の合計１００重量部に対し、（ｄ），（ｅ）の無
機質充填剤が合計で１００〜４００重量部、特に１５０
〜２５０重量部となるように、しかも（ｅ）成分の全無
機質充填剤中の含有量が５〜３５重量％、特に８〜３０
重量％となるように配合することが好ましい。（ｄ），
（ｅ）の無機質充填剤の総配合量が少なすぎると、膨張
係数が大きく、冷熱試験においてクラックの発生を誘発
させるおそれがある。一方、多すぎると、粘度が高くな
り、薄膜侵入性の低下をもたらすおそれがある。The amount of the inorganic filler (d) having a specific surface area of less than 4 m 2 / g is 50 to 350 parts by weight with respect to 100 parts by weight of the epoxy resin, and the inorganic filler having a specific surface area of 4 m 2 / g or more. The compounding amount of (e) is 5 to 120 parts by weight, and (d) and (e) are based on 100 parts by weight of the epoxy resin (a), the curing agent (b), and the copolymer (c) in total. 100 to 400 parts by weight, especially 150 parts by weight,
So that the content of the component (e) in the total inorganic filler is 5 to 35% by weight, especially 8 to 30% by weight.
It is preferable to mix them so as to be in% by weight. (D),
If the total amount of the inorganic filler (e) is too small, the coefficient of expansion is large, and cracks may be induced in a thermal test. On the other hand, if the amount is too large, the viscosity becomes high, and there is a possibility that the penetration of the thin film is reduced.
【００４０】本発明の好ましい態様は、比表面積が４ｍ
2／ｇ以上の微細な無機質充填剤を式（２）又は（３）
で示されるアミノシラン又はオルガノシラザン化合物か
ら選ばれる少なくとも１種の処理剤で表面処理したもの
を全無機質充填剤の５〜３５重量％含有させることで低
粘度かつ低シェア域の粘度を低くしたものであるが、特
に上記アルケニル基含有エポキシ樹脂のアルケニル基と
下記式（１） ＨaＲbＳｉＯ(4-a-b)/2 （１） で示される１分子中のケイ素原子の数が１０〜４００で
あり、ＳｉＨ基の数が１〜５であるオルガノハイドロジ
ェンポリシロキサンのＳｉＨ基との付加反応により得ら
れる共重合体と、上記特定の無機質充填剤を組み合わせ
ることで、より一層低粘度かつ低シェア域の粘度を下げ
ることができ、薄膜侵入性に優れることを知見したもの
であり、上述したように、エポキシ樹脂と硬化剤と共重
合体の合計量１００重量部に対し、上記無機質充填剤を
１００〜４００重量部の範囲とし、かつ共重合体中のオ
ルガノポリシロキサン単位の配合量をエポキシ樹脂と硬
化剤の合計量１００重量部に対して１〜１５重量部の割
合とすることが有効であることを見出したものである。
この範囲外では高粘度、高チキソ性になり、十分な薄膜
侵入特性が得られない。特に、無機質充填剤量が２００
重量部を超えて使用する場合、共重合体中のオルガノポ
リシロキサン単位の配合量はエポキシ樹脂と硬化剤の合
計量１００重量部に対して２重量部以上、特に４重量部
以上が好ましい。この範囲外では高粘度、高チキソ性に
なり、十分な薄膜侵入特性が得られない場合が生じる。In a preferred embodiment of the present invention, the specific surface area is 4 m
2 / g or more of a fine inorganic filler of formula (2) or (3)
A low-viscosity and low-shear region viscosity is reduced by containing 5-35% by weight of the total inorganic filler containing a surface-treated material with at least one treating agent selected from the group consisting of an aminosilane and an organosilazane compound. In particular, the number of silicon atoms in one molecule represented by the following formula (1) H a R b SiO (4-ab) / 2 (1) is 10 to 400 and the alkenyl group of the alkenyl group-containing epoxy resin is preferably And a copolymer obtained by an addition reaction of an organohydrogenpolysiloxane having 1 to 5 SiH groups with SiH groups, and the above-mentioned specific inorganic filler, thereby further lowering the viscosity and lowering the share. It has been found that the viscosity of the region can be lowered and the thin film penetration is excellent, and as described above, the total amount of the epoxy resin, the curing agent and the copolymer is 100 parts by weight. The inorganic filler is in the range of 100 to 400 parts by weight, and the amount of the organopolysiloxane unit in the copolymer is 1 to 15 parts by weight based on 100 parts by weight of the total amount of the epoxy resin and the curing agent. It has been found that setting the ratio is effective.
Outside this range, high viscosity and high thixotropy are obtained, and sufficient thin film penetration properties cannot be obtained. In particular, when the amount of the inorganic filler is 200
When used in excess of parts by weight, the amount of the organopolysiloxane unit in the copolymer is preferably at least 2 parts by weight, particularly preferably at least 4 parts by weight, based on 100 parts by weight of the total amount of the epoxy resin and the curing agent. Outside this range, high viscosity and high thixotropy may result, and sufficient thin film penetration properties may not be obtained.
【００４１】本発明の封止材には、更に必要に応じ、接
着向上用炭素官能性シラン、カーボンブラックなどの顔
料、染料、酸化防止剤、表面処理剤（γ−グリシドキシ
プロピルトリメトキシシランなど）、その他の添加剤を
配合することができる。The sealing material of the present invention may further include, if necessary, pigments such as carbon-functional silane for improving adhesion, dyes such as carbon black, antioxidants, and surface treatment agents (γ-glycidoxypropyltrimethoxysilane). Etc.), and other additives.
【００４２】本発明の封止材（エポキシ樹脂組成物）
は、例えば、エポキシ樹脂、硬化剤、硬化促進剤、無機
質充填剤を同時に又は別々に必要により加熱処理を加え
ながら撹拌、溶解、混合、分散させることによって製造
することができる。これらの混合物の混合、撹拌、分散
等の装置は特に限定されないが、撹拌、加熱装置を備え
たライカイ機、３本ロール、ボールミル、プラネタリー
ミキサー等を用いることができる。これら装置を適宜組
み合わせて使用してもよい。The sealing material of the present invention (epoxy resin composition)
Can be produced, for example, by stirring, dissolving, mixing, and dispersing an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler simultaneously or separately while applying a heat treatment as needed. The apparatus for mixing, stirring, and dispersing the mixture is not particularly limited, but a raikai machine equipped with a stirring and heating device, a three-roll mill, a ball mill, a planetary mixer, or the like can be used. These devices may be used in appropriate combination.
【００４３】なお、本発明において、封止材として用い
る液状エポキシ樹脂組成物の粘度は、２５℃において１
０，０００ポイズ以下のものが好ましい。また、この封
止材の成形方法、成形条件は、常法とすることができる
が、好ましくは、先に１００〜１２０℃，０．５時間以
上、後硬化として１５０℃、０．５時間以上で熱オーブ
ンキュアを行う。後硬化が１５０℃，０．５時間未満で
は、十分な硬化物特性が得られないおそれがある。ま
た、最初の成形条件が１００〜１２０℃，０．５時間未
満では、硬化後にボイドが発生するおそれがある。In the present invention, the viscosity of the liquid epoxy resin composition used as a sealing material is 1 at 25 ° C.
Those having a value of not more than 000 poise are preferred. Further, the molding method and molding conditions of the sealing material may be ordinary methods, but are preferably 100 to 120 ° C. and 0.5 hours or more first, and 150 ° C. and 0.5 hours or more for post-curing. Perform heat oven cure with. If the post-curing is performed at 150 ° C. for less than 0.5 hour, sufficient cured product properties may not be obtained. If the initial molding conditions are 100 to 120 ° C. and less than 0.5 hour, voids may be generated after curing.
【００４４】ここで、本発明に用いるフリップチップ型
半導体装置は、図１に示したように、通常、有機基板１
の配線パターン面に複数個のバンプ２を介して半導体チ
ップ３が搭載されているものであり、上記有機基板１と
半導体チップ３との隙間（バンプ２間の隙間）をアンダ
ーフィル材４が充填され、その側部がフィレット材５で
封止されたものとすることができるが、本発明の封止材
は、特にアンダーフィル材を形成する場合に有効であ
る。Here, the flip-chip type semiconductor device used in the present invention usually has an organic substrate 1 as shown in FIG.
The semiconductor chip 3 is mounted on the wiring pattern surface via a plurality of bumps 2, and an underfill material 4 fills a gap between the organic substrate 1 and the semiconductor chip 3 (a gap between the bumps 2). Although the side portion can be sealed with the fillet material 5, the sealing material of the present invention is particularly effective when forming an underfill material.
【００４５】本発明の封止材をアンダーフィル材の形成
に用いる場合、その硬化物のガラス転移温度以下の膨張
係数が２０〜４０ｐｐｍ／℃であることが好ましい。な
お、フィレット材用の封止材は、公知のものでよく、特
には、上述したと同様の液状エポキシ樹脂組成物を用い
ることができるが、この場合はその硬化物のガラス転移
温度以下のときの膨張係数が１０〜２０ｐｐｍ／℃であ
るものが好ましい。When the sealing material of the present invention is used for forming an underfill material, the cured product preferably has an expansion coefficient of not more than the glass transition temperature of 20 to 40 ppm / ° C. In addition, the sealing material for the fillet material may be a known material, and in particular, the same liquid epoxy resin composition as described above can be used. In this case, when the temperature is equal to or lower than the glass transition temperature of the cured product. Having an expansion coefficient of 10 to 20 ppm / ° C. is preferred.
【００４６】[0046]
【実施例】以下、実施例と比較例を示し、本発明を具体
的に説明するが、本発明は下記の実施例に制限されるも
のではない。EXAMPLES The present invention will be described below in detail with reference to examples and comparative examples, but the present invention is not limited to the following examples.
【００４７】［実施例１〜６、比較例１〜４］表１，２
で示す成分を配合し、３本ロールで均一に混練すること
によりエポキシ樹脂組成物を得た。なお、フィラーＡ〜
Ｇは、表３に示すシリカ微粉末を表３に示す組成で均一
に混合したフィラー混合物である。これらのエポキシ樹
脂組成物を用いて、以下に示す試験を行った。その結果
を表１，２に示す。 ［粘度］ＢＨ型回転粘度計を用いて２ｒｐｍ、１０ｒｐ
ｍの回転数で２５℃における粘度を測定した。 ［チキソ比］ＢＨ型回転粘度計を用いて２ｒｐｍと１０
ｒｐｍの粘度の比を２５℃におけるチキソ比とした。 ［ゲル化時間］組成物のゲル化時間を１５０℃の熱板上
で測定した。 ［Ｔｇ］：ガラス転移温度 ５ｍｍ×５ｍｍ×１５ｍｍの硬化物サンプルを用いてＴ
ＭＡ（熱機械分析装置）により５℃／分の速度で昇温し
た際の値を測定した。 ［ＣＴＥ−１］：Ｔｇ以下の膨張係数 ［ＣＴＥ−２］：Ｔｇ以上の膨張係数 上記ガラス転移温度の測定において、ＣＴＥ−１は５０
〜８０℃の温度範囲、ＣＴＥ−２は２００〜２３０℃の
温度範囲における値を求めた。Examples 1 to 6, Comparative Examples 1 to 4 Tables 1 and 2
Were mixed and uniformly kneaded with three rolls to obtain an epoxy resin composition. In addition, filler A ~
G is a filler mixture obtained by uniformly mixing the silica fine powder shown in Table 3 with the composition shown in Table 3. The following tests were performed using these epoxy resin compositions. The results are shown in Tables 1 and 2. [Viscosity] 2 rpm, 10 rpm using a BH-type rotational viscometer
The viscosity at 25 ° C. was measured at a rotation speed of m. [Thixo ratio] Using a BH-type rotational viscometer at 2 rpm and 10 rpm
The ratio of the viscosity at rpm was the thixo ratio at 25 ° C. [Gelling time] The gelling time of the composition was measured on a hot plate at 150 ° C. [Tg]: glass transition temperature T using a cured product sample of 5 mm × 5 mm × 15 mm
The value when the temperature was raised at a rate of 5 ° C./min by an MA (thermomechanical analyzer) was measured. [CTE-1]: Expansion coefficient of Tg or less [CTE-2]: Expansion coefficient of Tg or more In the above measurement of the glass transition temperature, CTE-1 was 50.
The temperature in the temperature range of ８０80 ° C. and the value of CTE-2 in the temperature range of 200 to 230 ° C. were determined.
【００４８】［侵入試験］図２（Ａ），（Ｂ）に示した
ように、熱板１１上に下側スライドガラス１２を載置
し、その上にそれぞれ厚さ８０μｍの２枚のポリイミド
フィルム１３，１３を１ｃｍの間隔を隔ててセットし、
その上から上側スライドガラス１４を被せ、上記両スラ
イドガラス１２，１４と２枚のポリイミドフィルム１
３，１３とにより、幅１ｃｍ、高さ８０μｍの間隙１５
を形成した。上記下側スライドガラス１２上にエポキシ
樹脂組成物１６を置き、熱板１１を８０℃、１２０℃に
設定した時、上記組成物１６が上記間隙１５に２０ｍｍ
の距離まで浸透、到達するまでの時間を測定した。[Penetration Test] As shown in FIGS. 2A and 2B, a lower slide glass 12 was placed on a hot plate 11 and two polyimide films each having a thickness of 80 μm were placed thereon. 13 and 13 are set at an interval of 1 cm,
The upper slide glass 14 is covered from above, and the two slide glasses 12 and 14 and the two polyimide films 1 are placed.
A gap 15 having a width of 1 cm and a height of 80 μm is formed by 3 and 13.
Was formed. When the epoxy resin composition 16 is placed on the lower slide glass 12 and the hot plate 11 is set at 80 ° C. and 120 ° C., the composition 16
And measured the time to reach.
【００４９】[0049]
【表１】 [Table 1]
【００５０】[0050]
【表２】 [Table 2]
【００５１】［成分］ ＲＥ３１０：ビスフェノールＡ型エポキシ樹脂（日本化
薬（株）製） ＲＥ３０４：ビスフェノールＦ型エポキシ樹脂（日本化
薬（株）製） ＭＨ７００：メチルテトラヒドロ無水フタル酸（新日本
理化（株）製）[Components] RE310: Bisphenol A type epoxy resin (manufactured by Nippon Kayaku Co., Ltd.) RE304: Bisphenol F type epoxy resin (manufactured by Nippon Kayaku Co., Ltd.) MH700: Methyltetrahydrophthalic anhydride (Shin Nippon Chemical Co., Ltd.) Co., Ltd.)
【００５２】[0052]
【化１０】 Embedded image
【００５３】ＫＢＭ４０３：シランカップリング剤、グ
リシドキシプロピルトリメトキシシラン（信越化学工業
（株）製） ２ＰＨＺ−ＰＷ：２−フェニル−４，５−ジヒドロキシ
メチルイミダゾール（四国化成（株）製） ＨＸ３７４１：イミダゾール化合物を含有するマイクロ
カプセル化触媒（旭チバ（株）製）KBM403: silane coupling agent, glycidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd.) 2PHZ-PW: 2-phenyl-4,5-dihydroxymethylimidazole (manufactured by Shikoku Chemicals Co., Ltd.) HX3741 : Microencapsulated catalyst containing imidazole compound (manufactured by Asahi Ciba Co., Ltd.)
【００５４】[0054]
【表３】 [Table 3]
【００５５】ＳＥ８ＦＣ：平均粒径６μｍの球状シリカ
（（株）龍森社製） ＳＯ３２Ｈ：平均粒径２μｍの真球状シリカ（（株）ア
ドマテックス製） ＳＯ２５Ｒ：平均粒径０．５μｍの真球状シリカ
（（株）アドマテックス製）SE8FC: Spherical silica having an average particle diameter of 6 μm (manufactured by Tatsumori Co., Ltd.) SO32H: Spherical silica having an average particle diameter of 2 μm (manufactured by Admatex) SO25R: Spherical spherical having an average particle diameter of 0.5 μm Silica (manufactured by Admatechs)
【００５６】[0056]
【発明の効果】本発明のフリップチップ型半導体装置用
封止材は、多量の無機質充填剤を配合しても低シェア域
での粘度が低く、薄膜侵入特性に優れており、この封止
材を用いたフリップチップ型半導体装置は非常に信頼性
の高いものである。The sealing material for flip-chip type semiconductor devices of the present invention has a low viscosity in a low shear region even when a large amount of an inorganic filler is blended, and has excellent thin film penetration properties. Is highly reliable.
【図１】フリップチップ型半導体装置の一例を示す概略
図である。FIG. 1 is a schematic view illustrating an example of a flip-chip type semiconductor device.
【図２】侵入試験で用いたテストピースを示し、（Ａ）
は側面図、（Ｂ）は平面図である。FIG. 2 shows a test piece used in the penetration test, (A)
Is a side view, and (B) is a plan view.
１ 有機基板 ２ バンプ ３ 半導体チップ ４ アンダーフィル材 ５ フィレット材 １１ 熱板 １２ 下側スライドガラス １３ ポリイミドフィルム １４ 上側スライドガラス １５ 間隙 １６ エポキシ樹脂組成物 Reference Signs List 1 organic substrate 2 bump 3 semiconductor chip 4 underfill material 5 fillet material 11 hot plate 12 lower slide glass 13 polyimide film 14 upper slide glass 15 gap 16 epoxy resin composition
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 23/29 Ｈ０１Ｌ 23/30 Ｒ 23/31 (72)発明者 若尾 幸 群馬県碓氷郡松井田町大字人見１番地10 信越化学工業株式会社シリコーン電子材料 技術研究所内 (72)発明者 塩原 利夫 群馬県碓氷郡松井田町大字人見１番地10 信越化学工業株式会社シリコーン電子材料 技術研究所内──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification FI FI Theme Court ゛ (Reference) H01L 23/29 H01L 23/30 R 23/31 (72) Inventor Sachi Wakao Daijito, Matsuidamachi, Usui-gun, Gunma Prefecture No. 1-10 Shin-Etsu Chemical Co., Ltd. Silicone Electronic Materials Research Laboratory (72) Inventor Toshio Shiobara 1-10, Hitomi, Matsuida-cho, Usui-gun, Gunma Prefecture Shin-Etsu Chemical Co., Ltd. Silicone Electronics Materials Research Laboratory
Claims (4)
１００重量部、 （ｂ）硬化剤：
０〜８０重量部、 （ｃ）下記平均組成式（１） ＨaＲbＳｉＯ(4-a-b)/2 （１） （但し式中、Ｒは置換又は非置換の一価炭化水素基、ａ
は０．００５〜０．２、ｂは１．８〜２．２、１．８０
５≦ａ＋ｂ≦２．３を満足する正数を示す。）で示され
るオルガノポリシロキサンのケイ素原子に結合した水素
原子とアルケニル基含有エポキシ樹脂のアルケニル基と
の付加反応により得られる共重合体：上記オルガノポリ
シロキサン単位が上記（ａ），（ｂ）成分の合計量１０
０重量部に対して１〜１５重量部含まれる量、 （ｄ）比表面積が４ｍ2／ｇ未満の無機質充填剤：
５０〜３５０重量部、 （ｅ）下記一般式（２）又は（３） 【化１】 （但し各式中、Ｒ1は同一又は異種の炭素数１〜４のア
ルキル基、ビニル基又はフェニル基、Ｒ2は水素原子又
はＲ1、ｍは０〜４の整数である。）で示されるアミノ
シラン又はオルガノシラザン化合物で表面処理された比
表面積が４ｍ2／ｇ以上の微細な無機質充填剤：
５〜１２０重量部 を含有し、（ｄ），（ｅ）成分の無機質充填剤が（ａ）
液状エポキシ樹脂、（ｂ）硬化剤、（ｃ）共重合体の合
計量１００重量部に対して合計で１００〜４００重量部
含有されていることを特徴とするフリップチップ型半導
体装置用封止材。1. (a) Liquid epoxy resin:
100 parts by weight, (b) curing agent:
0-80 parts by weight, (c) the following average compositional formula (1) H a R b SiO (4-ab) / 2 (1) ( where Shikichu, R represents a substituted or unsubstituted monovalent hydrocarbon radical, a
Is 0.005 to 0.2, b is 1.8 to 2.2, 1.80
Indicates a positive number satisfying 5 ≦ a + b ≦ 2.3. A) a copolymer obtained by the addition reaction of a hydrogen atom bonded to a silicon atom of an organopolysiloxane with an alkenyl group of an alkenyl group-containing epoxy resin represented by the following formula: wherein the organopolysiloxane unit is the above component (a) or (b) Total amount of 10
(D) an inorganic filler having a specific surface area of less than 4 m 2 / g:
50 to 350 parts by weight, (e) the following general formula (2) or (3) (Wherein, R 1 is the same or different alkyl group having 1 to 4 carbon atoms, vinyl group or phenyl group, R 2 is a hydrogen atom or R 1 , and m is an integer of 0 to 4). Fine inorganic filler having a specific surface area of 4 m 2 / g or more, which is surface-treated with an aminosilane or an organosilazane compound to be used:
5 to 120 parts by weight, and the inorganic filler of the components (d) and (e) is (a)
A sealing material for a flip-chip type semiconductor device, comprising 100 to 400 parts by weight in total with respect to 100 parts by weight in total of a liquid epoxy resin, (b) a curing agent, and (c) a copolymer. .
５〜３５重量％である請求項１記載の封止材。2. The sealing material according to claim 1, wherein the content of the component (e) is 5 to 35% by weight based on the total amount of the inorganic filler.
載の封止材。3. The sealing material according to claim 1, further comprising a curing accelerator.
物にて封止されたフリップチップ型半導体装置。4. A flip-chip type semiconductor device sealed with a cured product of the sealing material according to claim 1, 2 or 3.
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| JP16067199 | 1999-06-08 | ||
| JP2000165448A JP3707531B2 (en) | 1999-06-08 | 2000-06-02 | Flip chip type semiconductor device sealing material and flip chip type semiconductor device |
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