JP2001053122A - 表面電位に基づく孤立パターン検出方法及びその装置 - Google Patents
表面電位に基づく孤立パターン検出方法及びその装置Info
- Publication number
- JP2001053122A JP2001053122A JP2000152942A JP2000152942A JP2001053122A JP 2001053122 A JP2001053122 A JP 2001053122A JP 2000152942 A JP2000152942 A JP 2000152942A JP 2000152942 A JP2000152942 A JP 2000152942A JP 2001053122 A JP2001053122 A JP 2001053122A
- Authority
- JP
- Japan
- Prior art keywords
- scanning
- irradiation
- sample
- electron beam
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000002955 isolation Methods 0.000 title abstract 3
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 27
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 claims abstract description 6
- 238000010894 electron beam technology Methods 0.000 claims description 52
- 239000002245 particle Substances 0.000 claims description 22
- 238000001000 micrograph Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 abstract description 20
- 239000007924 injection Substances 0.000 abstract description 20
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 230000007547 defect Effects 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000011179 visual inspection Methods 0.000 abstract description 4
- 230000002950 deficient Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 17
- 230000001133 acceleration Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000002159 abnormal effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Measuring Leads Or Probes (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000152942A JP2001053122A (ja) | 1999-06-02 | 2000-05-24 | 表面電位に基づく孤立パターン検出方法及びその装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15532699 | 1999-06-02 | ||
| JP11-155326 | 1999-06-02 | ||
| JP2000152942A JP2001053122A (ja) | 1999-06-02 | 2000-05-24 | 表面電位に基づく孤立パターン検出方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001053122A true JP2001053122A (ja) | 2001-02-23 |
| JP2001053122A5 JP2001053122A5 (enrdf_load_stackoverflow) | 2005-11-24 |
Family
ID=26483355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000152942A Pending JP2001053122A (ja) | 1999-06-02 | 2000-05-24 | 表面電位に基づく孤立パターン検出方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001053122A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7626164B2 (en) | 2005-11-29 | 2009-12-01 | Samsung Electronics Co., Ltd. | Method of scanning a substrate, and method and apparatus for analyzing crystal characteristics |
-
2000
- 2000-05-24 JP JP2000152942A patent/JP2001053122A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7626164B2 (en) | 2005-11-29 | 2009-12-01 | Samsung Electronics Co., Ltd. | Method of scanning a substrate, and method and apparatus for analyzing crystal characteristics |
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