JP2001049431A - Sputtering equipment and thin film formation - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide sputtering equipment and a method of thin film formation, practically unaffected by the timewise fluctuation of sputtering conditions and capable of unifomizing the thickness of thin film with higher accuracy. SOLUTION: Sputtering equipment 1 has, in a vacuum chamber 2, a substrate- fixing holder 6 for holding a substrate 7 where a thin film is to be formed on the surface, a target 3 set in a position opposite to the substrate-fixing holder 6, and a film thickness correcting plate 9 disposed between the substrate- fixing holder 6 and the target 3. The film thickness correcting plate 9 is formed to 0.3 to 1 mm thickness and disposed in a position at a distance of 7 to 13 mm from the surface of the substrate 7 on the target 3 side.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a sputtering apparatus for forming a thin film on a substrate and a method for forming a thin film using the sputtering apparatus.

[0002]

2. Description of the Related Art Conventionally, plasma is generated by an inert gas such as Ar between a target material provided on a cathode electrode and a substrate provided on an anode electrode in a vacuum apparatus to ionize the inert gas. 2. Description of the Related Art There is known a sputtering apparatus that forms a thin film by sputtering a target by depositing atoms and the like constituting a target material on a substrate. Many of the target constituent atoms scattered from the target are non-uniformly deposited on the substrate due to factors such as the scattered distribution shape, gas pressure, and the relative positional relationship between the target and the substrate. As a result, the thickness of the thin film formed on the substrate becomes uneven. In order to make this uniform, a shielding plate or the like as a film thickness correction plate or a film thickness correction plate provided with an opening is usually provided between the target and the substrate.

For example, in a spin-revolution type sputtering apparatus described in Japanese Patent Application Laid-Open No. 10-18031, a central area between a target and a substrate has a size of 3 to 15% of the area of the target. A disk-shaped shield plate made of stainless steel or aluminum material is provided by a metal support having a thickness of several mm so that the center of the target and the center of the shield plate coincide. With this configuration, a sputtering film having a uniform thickness in the radial direction of the substrate is formed.

Japanese Patent Application Laid-Open No. 8-239759 discloses a facing sputtering method in which a film is formed while converging plasma between a pair of facing sputtering targets. In the facing sputtering method disclosed in this publication, one plate-shaped shielding plate made of metal or ceramic that limits an area to which particles flying from a target adhere is installed above a substrate, and an opening of the shielding plate is provided. Only the particles that have passed through the gaps or gaps are deposited on the substrate, and by moving the substrate in a direction perpendicular to the surface of the target, it is possible to form a uniform thin film over the entire surface of a large substrate. Making it possible. Further, by setting the distance between the shielding plate and the substrate to about 2 mm or less, the film deposited on the substrate is prevented from peeling off from the substrate.

[0005]

However, in a configuration in which a shielding plate is disposed in a sputtering path between a target and a substrate, such as a conventional sputtering apparatus disclosed in Japanese Patent Application Laid-Open No. 10-18031. Since the thickness of the shielding plate causes a distribution in the thickness of the thin film formed on the substrate, it has been difficult to make the thickness of the thin film uniform with higher precision. In addition, since the shielding plate is provided in the central region between the target and the substrate, the thickness distribution of the thin film changes sharply with the temporal variation of the sputtering conditions, which also reduces the thickness of the thin film. It has been difficult to achieve uniformity with higher precision. Furthermore, due to these effects, it is difficult to obtain the optimal shape of the shielding plate by simulation in order to make the film thickness uniform with high precision, and many trials and errors must be repeated to obtain the optimally shaped shielding plate. There was a problem that had to be. Further, in the facing sputtering method disclosed in Japanese Patent Application Laid-Open No. H8-239759, a region where particles flying from a target adhere to the substrate is limited by an opening or a gap in the shielding plate. It has been difficult to improve the speed and thus the productivity. Further, since the shielding plate is provided so that the distance between the shielding plate and the substrate is about 2 mm or less, the adhesion of the thin film formed behind the shielding plate to the substrate may be weak depending on the sputtering conditions. There was a risk of doing so.

Accordingly, an object of the present invention is to provide a sputtering apparatus and a method for forming a thin film, which are less susceptible to temporal fluctuations in sputtering conditions and which can make the thickness of a thin film uniform with higher precision.

[0007]

In order to achieve the above object, a sputtering apparatus according to the present invention is provided with a substrate holding means for holding a substrate on which a thin film is to be formed, and a sputtering apparatus provided at a position facing the substrate holding means. A sputtering target having a target and a film thickness correction plate disposed between the substrate holding means and the target for uniforming the film thickness of the thin film, wherein the film thickness correction plate has a thickness of 0.3 mm.
From 1 mm.

According to the sputtering apparatus of the present invention configured as described above, when forming a thin film by depositing sputtered particles emitted from the target by sputtering the target on the surface of the substrate, the film thickness correction is performed. Because there is no thickness distribution due to the thickness of the plate itself,
It is possible to make the thickness of the thin film uniform with higher precision.

Further, the thickness of the thickness correction plate is 0.4 m.
It is preferable to adopt a configuration of m to 0.6 mm.

[0010] In addition, since the film thickness compensating plate is arranged at a distance of 7 mm to 13 mm from the surface of the substrate toward the target, the film is generated when the target has heat. It becomes less susceptible to fluctuations in sputtering conditions, and it is possible to improve the adhesion of the thin film to the substrate.

Further, the film thickness correction plate is supported in a cantilever manner by a film thickness correction plate support member provided outside a region between the substrate holding means and the target. This prevents the film thickness correction plate support member from blocking the sputtering path.

Further, it is preferable that the thickness correction plate is made of titanium, ceramics or aluminum.

Further, by forming a plurality of film thickness correcting plates, a plurality of thin films having different film thicknesses can be formed with high accuracy and uniformity. Becomes possible.

[0014] Further, a plurality of targets having different constituent materials are provided, and a plurality of the film thickness correction plates respectively corresponding to the respective targets are provided. A plurality of thin films can be stacked with uniform thickness with high precision.

Further, according to the thin film forming method of the present invention, there is provided a substrate holding means for holding a substrate on which a thin film is formed on a surface, a target placed at a position facing the substrate holding means, A method of forming a thin film using a sputtering apparatus having a film thickness correction plate disposed between the substrate and a target to make the film thickness of the thin film uniform, wherein the step of attaching the substrate to the substrate holding means, Sputtering a target and depositing sputtered particles emitted from the target on the surface of the substrate, wherein the thickness correction plate having a thickness of 0.3 mm to 1 mm is used.

According to the method for forming a thin film of the present invention, when a thin film is formed by depositing sputtered particles emitted from the target by sputtering the target on the surface of the substrate, the thickness of the film thickness correction plate itself is determined. Since the film thickness distribution does not occur, the film thickness can be uniformed with higher precision and a thin film can be formed.

Further, before the step of sputtering the target and depositing sputtered particles emitted from the target on the surface of the substrate, the method further comprises a step of heating the film thickness correction plate. The film thickness correction plate is heated and deformed before the film forming process. For this reason, it is possible to prevent the film thickness correction plate from being deformed during the film forming process and causing a distribution of the film thickness of the thin film.

[0018]

Next, embodiments of the present invention will be described with reference to the drawings.

(First Embodiment) FIG. 1 is a schematic configuration diagram showing a first embodiment of the sputtering apparatus of the present invention.

As shown in FIG. 1, a sputtering apparatus 1 according to the present embodiment has a target 3 made of a film-forming material provided on a cathode electrode (not shown) and a substrate 7 on which a thin film is formed. And a vacuum chamber 2 for accommodating them. The sputtering apparatus 1 further includes a film forming position adjusting mechanism 4 for adjusting the distance between the target 3 and the substrate mounting holder 6, and a film forming position adjusting mechanism 4 interlocking with the center of the substrate mounting holder 6 and the center of the target 3. And a rotating arm 5 for adjusting the distance between the two. Further, in the sputtering apparatus 1, outside the region between the substrate 7 attached to the substrate attachment holder 6 and the target 3, the supporting member 8 was supported in a cantilever manner on a support 8 as a film thickness correction plate support member. A film thickness correction plate 9 is provided, and a heater 10 that is driven vertically in the figure to heat the film thickness correction plate 9 is provided.

Incidentally, the film thickness compensating plate 9 in this embodiment is
Is made of a titanium plate material having a thickness of 0.5 mm, and is formed in a leaf-like shape having a total length of 120 mm, a portion 60 mm from the tip and a maximum width of 10 mm at a maximum width of 10 mm. Thus, unlike the related art in which the region where the film adheres to the substrate 7 is greatly limited by the opening or gap of the shielding plate, the film forming speed does not decrease. Further, the film thickness compensating plate 9 is moved from the surface of the substrate 7 to the target 3 side.
It is installed at a distance of mm.

The target 3 is made of SiO ₂ and has a diameter of 5 inches.

Next, a method for forming a thin film using the sputtering apparatus of the present embodiment will be described.

First, a well-cleaned Si wafer substrate 7 having a diameter of 8 inches is fixed to a substrate mounting holder 6 so that the film formation surface faces the target 3. next,
After evacuating the inside of the vacuum chamber 2 from a vacuum exhaust port (not shown), the heater 10 stored in the upper part of the vacuum chamber 2 is lowered to heat the film thickness correction plate 9 and the substrate 7. At this time, the position of the substrate mounting holder 6 is adjusted by the substrate position adjusting mechanism 4 so that the distance between the heater 10 and the substrate 7 becomes 20 mm. Further, the substrate 7 is rotated by rotating the substrate mounting holder 6 at a constant speed, so that the substrate 7 is uniformly heated.

When the film thickness correcting plate 9 and the substrate 7 are heated to 300 ° C., the power of the heater 10 is turned off, and the heater 10 is stored in the upper part of the vacuum chamber 2. As described above, by heating the film thickness correction plate 9 in advance before the film forming process,
It is possible to prevent the film thickness correction plate 9 from being deformed during the film forming process and causing a distribution in the film thickness of the thin film.

Next, the substrate position adjusting mechanism 4 is driven to adjust the distance between the target 3 and the substrate 7 to be 100 mm, and the rotary arm 5 is driven to move the center of the substrate mounting holder 6 and the target 3. Distance to center of is 100
mm. Next, an oxygen gas and an argon gas are supplied into the vacuum chamber 2 at a flow ratio of O ₂ / Ar =
The pressure in the vacuum chamber 2 is set to 2 Pa. Then, 800W from RF power supply
Is applied to the target 3 to sputter the target 3, whereby the sputtered particles released from the target 3 are deposited on the substrate 7,
An SiO ₂ film is formed on the wafer substrate 7. This film formation step is started by opening a shutter (not shown) provided between the target 3 and the film thickness correction plate 9 after the sputtering is stabilized.

In order to form a thin film having a thickness of about 600 nm under a sputtering condition at a film forming rate of about 6 nm / min, the sputtering process requires about 100 minutes.
For this reason, the sputtering conditions fluctuate because the target 3 has heat during this time, and as a result, a distribution occurs in the film thickness of the formed thin film. However, in the present embodiment, 10 μm from the surface of the substrate 7 to the target 3 side.
Since the film thickness correction plate 9 is provided at a position separated by a distance of 2 mm, the thickness of the thin film formed on the substrate 7 is such that the shielding plate is provided in an intermediate region between the substrate and the target. Compared with the prior art, the target 3 is less susceptible to fluctuations in sputtering conditions caused by having heat.

Further, in the present embodiment, since the film thickness correction plate 9 is not installed very close to the surface of the substrate 7 unlike the prior art, no shadow of the film thickness correction plate 9 occurs. for that reason,
A thin film having a uniform thickness can be formed over the entire surface of the substrate 7 and the adhesion of the thin film to the substrate 7 can be improved.

Further, as described above, the fluctuation of the film thickness distribution caused by the temporal fluctuation of the sputtering conditions and the fluctuation of the film thickness distribution generated by the structural factors due to the material and thickness of the film thickness compensating plate 9 are suppressed. Therefore, the thickness of the thin film actually formed on the substrate 7 matches well with the result of the simulation. Therefore, it is possible to reduce trial and error work elements by the operator.

Next, when it is confirmed by monitoring that a thin film having a predetermined thickness is formed on the substrate 7, the shutter is closed and the RF power is turned off to terminate the sputtering. Subsequently, the supply of the oxygen gas and the argon gas is stopped, and the inside of the vacuum chamber 2 is sufficiently evacuated. When the temperature of the substrate 7 decreases to near room temperature, the evacuation valve (not shown) is closed, and the vacuum chamber 2 is closed. Open and remove the substrate 7 from the substrate mounting holder 6. Through the above steps, the step of forming a thin film on the substrate 7 is completed.

FIG. 2 is a graph showing the results of measuring the radial thickness distribution of the SiO ₂ film formed on the substrate by the thin film forming method of the present embodiment using a stylus type measuring instrument.

When a thin film having a thickness of 605 nm was formed on the substrate 7 by the above-described thin film forming method, 605 ± 1 within a range of a radius of 70 mm from the center of the substrate 7.
A film thickness distribution of 0 nm was measured. This film thickness distribution is 60
When expressed as a percentage of the film thickness of 5 nm, ± 1.
Expressed as 6%. Since this result agrees well with the film thickness distribution obtained by the simulation, it is possible to reduce the work of repeating a lot of trial and error to obtain a film thickness correction plate having an optimal shape.

As described above, according to the present embodiment, since the film thickness distribution due to the thickness of the film thickness correction plate 9 itself does not occur, the film thickness of the thin film formed on the substrate 7 can be more accurately determined. It can be made uniform. Further, since the film thickness compensating plate 9 is provided at a position relatively close to the surface of the substrate 7, the film thickness of the thin film formed on the substrate 7 is shielded in an intermediate region between the substrate and the target. Compared with the prior art in which the plate is installed, it is possible to make the target 3 less susceptible to the fluctuation of the sputtering condition caused by having heat.

Here, the inventor of the present application carried out the following comparative example in order to define the applicable range of the material, thickness, installation position and the like of the film thickness correction plate 9 in the above embodiment. . Hereinafter, these comparative examples will be described.

[First Comparative Example] In the first comparative example, a film thickness correction plate 9 having a thickness of 1 mm was used, and the film thickness correction plate 9 was set at a position of 13 mm from the substrate 7 to the target 3 side. ,
The above-described thin film forming method was performed by the sputtering apparatus 1 shown in FIG. As a result, the first
As in the case of the first embodiment, a thin film having a uniform thickness with high precision was obtained.

[Second Comparative Example] In a second comparative example, a thickness correction plate 9 having a thickness of 0.3 mm was used.
Was set at a position of 7 mm from the substrate 7 to the target 3 side, and the above-described thin film forming method was performed by the sputtering apparatus 1 shown in FIG. As a result, similarly to the first embodiment described above, a thin film having a uniform thickness with high precision was obtained.

[Third Comparative Example] In a third comparative example, a thickness correction plate 9 having a thickness of 0.3 to 1 mm is used, and the thickness correction plate 9 is moved from the substrate 7 to the target 3 by 7 to 13 mm. And the above-mentioned thin film forming method was performed by the sputtering apparatus 1 shown in FIG. As a result, similarly to the first embodiment described above, a thin film having a uniform thickness with high precision was obtained. In particular, the thickness correction plate 9
When the thickness was 0.4 to 0.6 mm, preferable results were obtained.

[Fourth Comparative Example] In the fourth comparative example, a film thickness correction plate 9 having a thickness of 2 mm was used, and the film thickness correction plate 9 was set at a position of 10 mm from the substrate 7 toward the target 3. ,
The above-described thin film forming method was performed by the sputtering apparatus 1 shown in FIG. As a result, it was not possible to obtain a thin film having a uniform thickness with high precision.

[Fifth Comparative Example] In the fifth comparative example, a thickness correction plate 9 having a thickness of 0.15 mm is used, and the thickness correction plate 9 is set at a position 10 mm from the substrate 7 toward the target 3. Then, the above-described thin film forming method was performed by the sputtering apparatus 1 shown in FIG. As a result, the tip of the film thickness correction plate 9 warped largely toward the target 3 during sputtering. Further, after the sputtering, the substrate 7
When the temperature of the substrate dropped to near room temperature, the tip of the film thickness correction plate 9 was greatly warped toward the substrate 7, and the formed thin film was damaged. Further, a thin film having a uniform thickness with high precision could not be obtained.

[Sixth Comparative Example] In the sixth comparative example, a thickness correction plate 9 having a thickness of 0.3 mm was used.
Was set at a position of 20 mm from the substrate 7 to the target 3 side, and the above-described thin film forming method was performed by the sputtering apparatus 1 shown in FIG. As a result, it was not possible to obtain a thin film having a uniform thickness with high precision.

[Seventh Comparative Example] In a seventh comparative example, a thickness correction plate 9 having a thickness of 0.3 mm was used.
Was placed at a position of 5 mm from the substrate 7 to the target 3 side, and the above-described thin film forming method was performed by the sputtering apparatus 1 shown in FIG. As a result, when the temperature of the substrate 7 dropped to near room temperature after the end of the sputtering, the tip of the film thickness compensating plate 9 warped toward the substrate 7, but did not damage the formed thin film. Further, according to the present comparative example, a thin film having a uniform thickness with high accuracy can be obtained, and the adhesion strength between the substrate and the thin film was the same as that in the above embodiment.

[Eighth Comparative Example] In an eighth comparative example, the sputtering apparatus 1 shown in FIG.
The thin film forming method described above was carried out to form a thin film having a thickness of 563 nm on the substrate 7.

FIG. 3 is a graph showing the results of measuring the radial thickness distribution of a thin film formed on a substrate according to this comparative example using a stylus type measuring instrument. As a result of forming a thin film according to this comparative example, a film thickness distribution of 563 ± 21 nm was measured in a range from the center of the substrate 7 to a radius of 70 mm. This film thickness distribution is expressed as ± 3.1% when expressed as a percentage with respect to the film thickness of 563 nm. Thus, in this comparative example, it was not possible to obtain a thin film having a uniform thickness with high precision equivalent to that of the above embodiment.

Ninth Comparative Example In a ninth comparative example, an aluminum film thickness correction plate 9 having a thickness of 5 mm was used, and the film thickness correction plate 9 was placed 50 mm away from the substrate 7 toward the target 3. The thin film forming method described above was carried out using the sputtering apparatus 1 shown in FIG. The position where the film thickness correction plate 9 is installed is a central region between the substrate 7 and the target 3.

As a result, in this comparative example, a thin film having a uniform thickness with high precision could not be obtained. Also, in order to make the film thickness uniform, many trials and errors were repeated to change the shape of the film thickness correction plate several times, and the above-mentioned thin film forming method was similarly performed. The distribution did not agree with the simulation results.

[Tenth comparative example] In the tenth comparative example,
Using a ceramic thickness correction plate 9 having a thickness of 2 mm,
The thickness correction plate 9 is moved about 2 m from the substrate 7 to the target 3 side.
m, and the above-described thin film forming method was performed by the sputtering apparatus 1 shown in FIG.

As a result, in this comparative example, it was not possible to obtain a thin film having a uniform thickness with high accuracy. Also, in order to make the film thickness uniform, many trials and errors were repeated to change the shape of the film thickness correction plate several times, and the above-mentioned thin film forming method was similarly performed. The distribution did not agree with the simulation results. However, the adhesion strength between the substrate and the thin film was equivalent to that of the above-described embodiment.

(Second Embodiment) FIG. 4 is a schematic structural view showing a second embodiment of the sputtering apparatus of the present invention.

As shown in FIG. 4, the sputtering apparatus 21 of the present embodiment comprises a target 23a made of SiO _2.
And a target 23b made of Al ₂ O ₃ . Further, the sputtering apparatus 21
Has two film thickness correction plates, a film thickness correction plate 29a that blocks particles emitted from the target 23a and a film thickness correction plate 29b that blocks particles emitted from the target 23b. Each of the correction plates 29a and 29b is attached to the rotary arm 25 via a column 28, respectively. Each strut 28
Each correction plate 29 has a shape such that the column 28 is not located in the region between the targets 23a and 23b and the substrate 27.
a, 29b.

In this embodiment, the film thickness compensating plate 29
Ceramics are used as materials a and 29b instead of metals such as titanium. As a ceramic material,
Alumina, SiC, quartz, or the like can be used. In the present embodiment, ceramics made of quartz are used as the material of the film thickness correction plates 29a and 29b. When switching between sputtering by the target 23a and sputtering by the target 23b, the rotating arm 25 is positioned at the center of the substrate mounting holder 26 so that the relative positional relationship between the substrate 27 and each of the targets 23a and 23b is the same. The distance between the target 23a and the center of the target 23b can be adjusted.

The vacuum chamber 22, the substrate position adjusting mechanism 24 and the heater 30 of the sputtering apparatus 21
And the like are the same as those of the sputtering apparatus 1 shown in FIG. Further, each film thickness correction plate 29a, 29b and each target 23a, 23b
And the distance (10 mm) between the substrate 27 and each of the film thickness correction plates 29a and 29b are the same as in the first embodiment.

In the thin film forming method using the sputtering apparatus of this embodiment, in the sputtering step, after forming a SiO ₂ film on the substrate 27 using the target 23a, the rotating arm 25 is rotated to rotate the substrate 27 and the target 23b. And then target 2
An Al ₂ O ₃ film is further laminated on the SiO ₂ film formed on the substrate 27 using 3b.

In the method of forming a thin film according to the present embodiment, the heat treatment before the sputtering step of the film thickness compensating plate 9 and the substrate 27 is omitted, and the sputtering process is performed with the film thickness compensating plate 9 and the substrate 27 kept at room temperature. Was done. Further, the flow rate ratio between the oxygen gas and the Ar gas introduced into the vacuum chamber 22 was made equal. In both the SiO ₂ film and the Al ₂ O ₃ film formation processes, the pressure in the vacuum chamber 22 was set to 2 Pa, and RF power of 800 W was applied to each of the targets 23 a and 23 b from an RF power supply. The deposition rate was 1.5 nm / min. Steps other than the above steps were performed in the same manner as the thin film forming method of the first embodiment.

FIG. 5 shows the results of measuring the radial thickness distribution of a laminated film composed of SiO ₂ and Al ₂ O ₃ formed on the substrate by the thin film forming method of this embodiment using a stylus type measuring instrument. It is a graph shown.

According to the thin film forming method described above, a SiO ₂ film having a thickness of 550 nm and an Al ₂ O film having a thickness of 48 nm are formed.
_When a thin film composed of _three films was formed on the substrate, a film thickness distribution of 598 ± 3 nm was measured in a range from the center of the substrate to a radius of 90 mm. This film thickness distribution is expressed as ± 0.5% when expressed as a percentage of the film thickness of 598 nm. Since this result agrees well with the film thickness distribution obtained by the simulation, it is possible to reduce the work of repeating a lot of trial and error to obtain a film thickness correction plate having an optimal shape.

Since the film thickness compensating plate has a small coefficient of thermal expansion of ceramics, it is not affected by heating during the sputtering process even if sputtering is started from a room temperature state. In addition, since the film thickness compensator has high rigidity due to being made of ceramics, even if stress is generated by a thin film formed on the surface of the film thickness compensator by sputtering, the film compensator is warped. Is suppressed. Therefore, by using a film thickness correction plate made of ceramics, it is possible to make the film thickness of the thin film uniform with high precision even under low-temperature film formation conditions.

Further, by using two targets 23a and 23b made of different materials, a thin film in which films made of different materials are stacked can be formed.

(Third Embodiment) In the sputtering apparatus of the present embodiment, a film thickness correction plate formed in a substantially triangular shape is used instead of a film thickness correction plate formed in a leaf shape. ing. The film thickness correction plate having a substantially triangular shape is arranged such that one tip is located above the center of the substrate. Other configurations of the sputtering apparatus of the present embodiment are the same as those of the sputtering apparatus 1 shown in FIG.

According to the sputtering apparatus of the present embodiment, by performing the same thin film forming method as in the first embodiment, the thickness distribution of the thin film formed on the substrate in the radial direction of the substrate can be reduced. It is not uniform and can be arbitrarily changed with high precision.

[0060]

As described above, according to the present invention, the thickness of the film thickness correction plate provided between the substrate holding means and the target is set to 0.3 mm to 1 mm, preferably 0.4 mm to 0.6 mm. By doing so, the film thickness of the thin film can be made uniform with higher accuracy. Furthermore, a film thickness correction plate
By arranging the target at a distance of 7 mm to 13 mm from the surface of the substrate to the target side, the target is less susceptible to fluctuations in sputtering conditions caused by heating, and the adhesion of the thin film to the substrate is improved. Can be

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing a first embodiment of a sputtering apparatus of the present invention.

FIG. 2 is a graph showing a result of measuring a radial thickness distribution of an SiO ₂ film formed on a substrate by a thin film forming method according to the first embodiment using a stylus type measuring instrument.

FIG. 3 is a graph showing the results of measurement of the radial thickness distribution of a thin film formed on a substrate according to an eighth comparative example using a stylus-type measuring instrument.

FIG. 4 is a schematic configuration diagram showing a second embodiment of the sputtering apparatus of the present invention.

FIG. 5 shows the result of measuring the radial thickness distribution of a laminated film composed of SiO ₂ and Al ₂ O ₃ formed on a substrate by a thin film forming method according to the second embodiment using a stylus-type measuring instrument. It is a graph.

[Explanation of symbols]

 1,21 Sputtering apparatus 2,22 Vacuum chamber 3,23a, 23b Target 4,24 Substrate position adjusting mechanism 5,25 Rotating arm 6,26 Substrate mounting holder 7,27 Substrate 8,28 Support 9,29a, 29b Film thickness correction Plate 10,30 heater

Claims (15)

[Claims] 1. A substrate holding means for holding a substrate on which a thin film is formed on a surface, a target placed at a position facing the substrate holding means, and a target disposed between the substrate holding means and the target. A sputtering apparatus having a film thickness correction plate for making the thickness of a thin film uniform, wherein the thickness of the film thickness correction plate is from 0.3 mm to 1 mm. 2. The sputtering apparatus according to claim 1, wherein the thickness of the film thickness correction plate is 0.4 mm to 0.6 mm. 3. The sputtering apparatus according to claim 1, wherein the film thickness correction plate is disposed at a distance of 7 mm to 13 mm from the surface of the substrate to the target. 4. The apparatus according to claim 1, wherein the film thickness correction plate is supported in a cantilever manner by a film thickness correction plate support member provided outside a region between the substrate holding means and the target. 4. The sputtering apparatus according to any one of items 3 to 3. 5. The sputtering apparatus according to claim 1, wherein the thickness correction plate is made of titanium, ceramics, or aluminum. 6. The sputtering apparatus according to claim 1, wherein a plurality of the film thickness correction plates are provided. 7. The semiconductor device according to claim 1, further comprising: a plurality of said targets having different constituent materials; and a plurality of said film thickness correction plates respectively corresponding to said respective targets. 3. The sputtering apparatus according to 1. 8. A substrate holding means for holding a substrate on which a thin film is formed on a surface, a target provided at a position facing the substrate holding means, and said target being disposed between said substrate holding means and said target. A method of forming a thin film using a sputtering apparatus having a film thickness correction plate for uniforming the film thickness of the thin film, the method comprising: attaching the substrate to the substrate holding means; sputtering the target; Depositing the released sputtered particles on the surface of the substrate, wherein the film thickness correction plate having a thickness of 0.3 mm to 1 mm is used. 9. The thin film forming method according to claim 8, wherein the thickness correction plate having a thickness of 0.4 mm to 0.6 mm is used. 10. The method for forming a thin film according to claim 8, wherein the thickness correction plate is disposed at a distance of 7 mm to 13 mm from the surface of the substrate to the target. 11. A cantilever-shaped support for said film thickness correction plate by a film thickness correction plate support member provided outside a region between said substrate holding means and said target. The method for forming a thin film according to claim 1. 12. The thin film forming method according to claim 8, wherein the film thickness compensating plate made of titanium, ceramics, or aluminum is used. 13. The thin film forming method according to claim 8, wherein a plurality of said thickness correction plates are used. 14. The thin film forming method according to claim 8, wherein a plurality of said targets having different constituent materials are used, and a plurality of said film thickness correction plates respectively corresponding to said respective targets are used. . 15. Sputtering the target,
The method of forming a thin film according to any one of claims 8 to 14, further comprising a step of performing a heat treatment on the film thickness correction plate before the step of depositing sputtered particles emitted from the target on the surface of the substrate.