JP2003282381A - Simulation method, recording medium, thin-film forming method and sputter film forming device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To restrict the number of times of film formation at a minimum, until film unevenness is eliminated by the simulation of a film thickness of a thin film with high accuracy. <P>SOLUTION: First, a film is formed under normal conditions, without installing a film thickness correction guide rod 8 (step S1). Next, only a piece of film thickness correction guide rod 8 is installed in a guide rod fixing holder 8a, in parallel with a moving direction of a substrate W<SB>1</SB>, and a film is formed again under the same conditions, as when the film was formed without using the film thickness correction guide rod 8 (step S2). Next, the difference in film thickness between a thin film formed, without installing the film thickness correction guide rod 8 and a thin film formed by installing only a piece of the film thickness correction guide rod 8, i.e., the width of decrease in the film thickness is measured (step S3). Next, this decreased width is approximated (step S4). The reduced width is approximated by a function (step S4), and the number of the film thickness correction guide rods 8 which makes the unevenness of the film thickness minimal and the arrangement position are determined based on the approximate function found in step S4 (step S5). <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention optimally arranges a film thickness correction guide rod used for enlarging a film forming region having a substantially uniform film thickness distribution in a sputter film forming apparatus having a carousel mechanism or an in-line system. The present invention relates to a simulation method, a recording medium, and a sputter film forming apparatus.

[0002]

2. Description of the Related Art When a thin film is formed by a sputtering method, it is possible to form a stable film having a higher packing density as compared with the vapor deposition method. However, the number of substrates that can be formed by one-time film formation is very limited, resulting in high cost. Optical film for steppers, etc.
Although it is unavoidable to sacrifice the cost to some extent for products whose quality is the highest priority compared to cost, cost is the highest priority issue for general applications, for example, optical thin films such as dichroic mirrors.

Therefore, a film forming method devised to improve the throughput is a method called a carousel type or in-line sputtering. The former has a mechanism for holding a substrate on the side surface on the outer circumference of a polygonal drum and rotating the substrate in the circumferential direction of the rotating drum about a rotation axis. In such an apparatus configuration, variations in optical characteristics in the rotation direction (film unevenness) can be made relatively small, but it is difficult to eliminate the unevenness only by rotating the carousel in the direction perpendicular to the rotation direction. is there. Further, in the latter device form, it is possible to deposit a large amount of substrates by fixing a target having a relatively large area and linearly moving in front of it, but like the carousel system, the movement direction In the vertical direction, it is difficult to eliminate the film unevenness only by moving the substrate.

In such an apparatus configuration, in order to correct the film thickness, a film thickness correction plate is inserted so as to partially cover the target surface, and the shape is optimized to make the film thickness distribution substantially uniform. Is proposed.

[0005]

However, in either the carousel mechanism or the in-line method, when actually determining the shape of the correction plate, the distribution of the film thickness and the fluctuation of the plasma atmosphere due to the inserted correction plate are taken into consideration. Then, it is necessary to actually manufacture and test many kinds of correction plates. In order to reduce the time and labor required for this trial and error, simulation is often performed based on the emission angle distribution of sputtered particles and plasma parameters in the chamber, but the accuracy of calculation is not so high in practice. This is partly because the sputtering process itself has many parameters and the phenomenon itself has not been completely clarified. Therefore, some trial and error was unavoidable.

Therefore, according to the present invention, a simulation is performed to calculate the film thickness with high accuracy without depending on the parameters such as the plasma parameter and the particle emission angle distribution, and the simulation for obtaining the number and arrangement of the rods based on the calculation result. It is an object of the present invention to provide a method and a recording medium, and to provide a thin film forming method and a sputtering film forming apparatus that can minimize the number of times of film forming until the film unevenness is actually eliminated.

[0007]

In order to achieve the above object, the simulation method of the present invention is for controlling the film thickness distribution of a thin film formed on a substrate by sputtering a target made of metal or dielectric. In a simulation method for determining the number of rods installed between the target and the substrate and the position where the rods are arranged, in the simulation method, the thin film is formed without installing the rods.
And the second step of installing at least one of the rods to form the thin film, and the difference in film thickness of each thin film formed by the first step and the second step. The method includes a step of obtaining an approximate function, and a step of obtaining the number of the rods and the position where the rods are arranged such that the calculated value of the unevenness of the film thickness based on the function is minimized.

In the simulation method of the present invention as described above, first, a thin film is formed without installing a bar, and then a thin film is formed.
At least one rod is installed to form a thin film, a function approximating the difference in film thickness between these thin films is obtained, and the calculated value of the unevenness of the film thickness based on this function is minimized. The number of rods and the position where the rods are arranged are determined. That is, in the simulation method of the present invention, the calculation performed to determine the number and arrangement of rods for forming a substantially uniform thin film does not use physical constants such as plasma parameters at all, but uses only experimental results. Since it is performed, the calculation result and the experimental result match with very high accuracy. Therefore, the conditions for forming a substantially uniform film over a large area can be determined in a short time.

The recording medium of the present invention is installed between the target and the substrate for controlling the film thickness distribution of a thin film formed on the substrate by sputtering a target made of metal or dielectric. In a recording medium recording a program for causing a computer to perform a simulation of the film thickness of a thin film, which determines the number of rods and the position where the rods are arranged, the thin film formed without installing the rods. , The number of rods such that the calculated value of the unevenness of the film thickness based on a function approximating the difference in film thickness with the thin film formed by installing at least one rod is A program for causing a computer to execute the processing for obtaining the position where the bar is arranged is recorded.

The thin film forming method of the present invention comprises a metal or dielectric target in a vacuum container capable of reducing pressure.
In a thin film forming method of forming a thin film while controlling a film thickness distribution of a thin film formed on the substrate by installing a rod between the substrate and the substrate, the thin film is formed without installing the rod. And a second step of forming at least one of the rods to form the thin film, and a film thickness of each thin film formed at the first step and the second step. And a third step of obtaining the number of the rods and the position where the rods are arranged so that the calculated value of the unevenness of the film thickness based on the function is minimized. And arranging the number of the rods obtained in the third step at the positions obtained in the third step.

In the thin film forming method of the present invention as described above, first, a thin film is formed without installing a bar, and then at least one bar is installed to form a thin film. A function approximating the difference in film thickness is obtained, and the number of rods and the position where the rods are arranged are obtained so that the calculated value of the unevenness of the film thickness based on this function is minimized. Then, the rods are arranged at the numbers and positions thus obtained to form a thin film. That is, in the case of the thin film forming method of the present invention, the number of times of film formation required to eliminate the film unevenness is the film formation in the first step for confirming the initial distribution of the film thickness of the thin film, at least one bar. In addition to the film formation in the second step for calculating the film thickness reduction effect due to the insertion of the material, it is possible to suppress the film formation to three times only for confirmation.

The sputtering film forming apparatus according to the present invention comprises a substrate holding member for holding a substrate on which a thin film is to be formed and a target holding member for holding a target in a vacuum container. A rod member for controlling the film thickness distribution between the target and the substrate can be arranged in the number and position determined by the simulation method of the present invention. It is characterized by having a member.

Since the sputter film forming apparatus of the present invention configured as described above has the bar-holding members which can be arranged in the number and the position determined by the simulation method of the present invention, it can be used for a large-area substrate. A uniform film can be formed.

Further, in the sputtering film forming apparatus of the present invention, the substrate holding member is rotated, and the rod holding members are arranged so that the longitudinal direction of each rod is substantially parallel to the tangent line of the substrate holding member in the rotation direction. It may be a so-called carousel type for holding a bar, or the substrate holding member is provided so as to be movable in a direction substantially parallel to the longitudinal direction of each bar held by the bar holding member, a so-called In-line type may be used.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings. (First Embodiment) FIG. 1 shows a schematic configuration diagram of a sputtering film forming apparatus of this embodiment used for forming a multilayer optical thin film.

In the sputtering film forming apparatus, a target cover 3a for holding a target 3 made of metal or dielectric and a plurality of substrates W on which thin films are formed are provided in a decompression chamber 1 evacuated by a vacuum pump (not shown). A polygonal rotatably provided substrate holder 2 for holding _l on the side surface and a plurality of metal film thickness correction guide rods 8 are arranged between the facing target 3 and the substrate W _l. An RF power source 4 for applying a high frequency voltage to the target 3 via the matching network 4a, and a DC power source for applying a DC voltage to the target 3 via a low pass filter 5a. and 5, Ar of introducing O ₂ gas is Ar gas and a reactive gas sputtering gas into vacuum chamber 1, and O ₂ inlet line 6, vacuum Chang And a H ₂ O introduction line 7 for introducing moisture into the 1.

Each film thickness correction guide bar 8 is for controlling the amount of film deposited on the substrate W ₁ , and its longitudinal direction is the rotational direction of the substrate holder 2 shown by arrow A in FIG. It is arranged so that it is parallel to the tangent line.

The substrate holder 2 shown in FIG. 1 has a hexagonal prism shape, can hold six substrates W ₁ on its side surface, and can rotate in the direction of arrow A. The substrate holder 2
The shape of is not limited to a hexagonal prism shape, and may be a polyhedral shape having 6 or more faces. In this case, the substrate W to be held is
_It goes without saying that the number of _l may be 6 or more.

FIG. 2 shows three views of the jig for fixing the guide rod. FIG. 3 is a front view showing a state in which the film thickness correction guide bar 8 is fixed to the guide bar fixing jig 8a.

A plurality of holes 10 into which the film thickness correction guide rod 8 is inserted are formed in the guide rod fixing jig 8a.
A plurality of screw holes 11 are formed so as to be orthogonal to each of these holes 10. This guide rod fixing jig 8a
Is fixed on the target cover 3a shown in FIG. 1 and is preferably not grounded. The film thickness correction guide rod 8 is installed between the two guide rod fixing jigs 8a so as to pass between the holes 10 provided in the guide rod fixing jig 8a, and the guide rod fixing jig 8a is installed through the screw holes 11 so as to Fixed with screws. The holes 10 through which the film thickness correction guide rod 8 does not pass are fixed with screws from above as in the case where the film thickness correction guide rod 8 is fixed by sealing with a screw or the like to prevent the film from being adhered. . The number and arrangement of the film thickness correction guide rods 8 are determined by a method described later so that the film thickness of the thin film formed among the plurality of holes 10 becomes substantially uniform.

Next, referring to FIG. 4 which is a view for explaining the positional relationship among the target, the film thickness correction guide bar and the substrate, and FIG. 5 which is a flow chart, the film thickness correction guide bar in the present embodiment. A method for determining the arrangement of 8 will be described.

As shown in FIG. 4A, the guide rod fixing jig 8a is capable of installing 21 film thickness correction guide rods 8 and the film installed on the guide rod fixing jig 8a. For the sake of convenience, the thickness correction guide rods 8 are arranged from above from the rods 8-1, 8-2, ...
It will be bar 8-21. Further, the five circular substrates W ₁ mounted on the substrate holder 2 are distinguished from the top as a substrate 12-1, a substrate 12-2, ..., A substrate 12-5, as shown in FIG. 4B. . The carousel type substrate holder 2
Rotates in a direction perpendicular to the longitudinal direction of the target 3.

Next, referring to the flowchart of FIG.
A method of determining the number of the film thickness correction guide rods 8 and the position to arrange them will be described in detail.

First, the guide rod fixing jig 8a is set on the target cover 3a. This guide rod fixing jig 8
Since a is fixed to the target cover 3a, it is not electrically grounded.

Next, film formation is performed under normal conditions without installing the film thickness correction guide rod 8 (step S1). At that time, the substrate 12-1, the substrate 12-2, ..., The substrate 12-5 are arranged at regular intervals so that the distribution of the film thickness in the necessary range can be seen.

Next, only _one film thickness correction guide bar 8 is set on the guide bar fixing jig 8a in parallel with the moving direction of the substrate W ₁ . The fixed position of the film thickness correction guide rod 8 is not particularly limited, but the position near the end of the target 3 should be avoided because the difference in the distribution of the film thickness varies greatly depending on the position, which easily causes an error. Therefore, as long as there is no particular problem, the film thickness correction guide rod 8 has a rod 8-11 near the center of the target 3.
It is desirable to install only a book, and further, in order to simplify the calculation described below, the substrates 12-1, 12-2, ..., 12-5 are symmetrical with respect to the front surface of the film thickness correction guide bar 8. It is desirable to arrange. Then, the film formation is performed again without using the film thickness correction guide rod 8 under the same conditions as the film formation (step S2). As a result, a thin film having a reduced film thickness is formed around the substrate W ₁ near the front where the film thickness correction guide bar 8 is installed.

Next, in order to quantify the effect on the film thickness distribution when only one film thickness correction guide bar 8 is inserted, a thin film formed without installing the film thickness correction guide bar 8 and a film. The difference in film thickness from the thin film formed by installing only one thickness correction guide bar 8, that is, the decrease width of the film thickness on the substrate W ₁ in front of the film thickness correction guide bar 8 is measured (step S3). From the results of the experiments so far, it is known that the rate of decrease of the film thickness is constant at any position of the film thickness correction guide bar 8 which is installed. The decrease width y on the substrate W ₁ is a symmetric function centered on the same position, for example, y = a × exp
Approximated in the form of (-b × x ²⁾ (Step S4). Here, x represents a position when an axis is set in the longitudinal direction of the target 3 with the center of the target 3 as the origin, and the minus direction is the upper part of the target 3. Further, a and b are arbitrary coefficients, but it is preferable that the experimental values and the calculated values obtained by the above-mentioned approximate expression be within a desired error range. The function to be approximated is not limited to the exponential function described above, and may be any function that can approximate the experimental result.

In order to approximate with a function having a symmetrical shape with respect to the origin as described above, the substrates 12-2 and 1
2-4 and the value of the reduction width of the substrates 12-1 and 12-5 are
It is preferable to use averaged values.

Finally, based on the approximation function obtained in step S4, the number of film thickness correction guide rods 8 and the positions where the film thickness correction guide rods 8 have the minimum unevenness of film thickness are determined (step S5). The calculated value of the reduction amount of the film thickness by the film thickness correction guide rod 8 installed only at a specific position, which is obtained by this approximation formula, is based on which position on the target 3 the film thickness correction guide rod 8 is installed. However, it agrees very well with the experimental result, and even when multiple pieces are installed, it agrees very accurately with the experimental result by adding the film thickness reduction amounts.

Therefore, it is possible to quantitatively predict what position and what percentage the film thickness formed on the substrate W ₁ will decrease, and thus the number of the film thickness correction guide rods 8 that minimizes the film unevenness. And the placement can be determined by simulation without actually trial and error.

Further, in the case of the present embodiment, the film thickness correction guide bar 8 for confirming the initial distribution of the film thickness of the thin film in step S1 is set as the number of times of film formation required to eliminate the film unevenness. In addition to the film formation under normal conditions and the film formation for calculating the film thickness reduction effect by inserting only one film thickness correction guide rod 8 in step S2, for confirmation. It is possible to limit the number of times of film formation to three times.

A program for performing these calculations can be easily created by using a relatively simple programming language, and this program may be recorded on a magnetic disk, a semiconductor memory or another recording medium. .

Next, the film forming process of the oxide thin film on the substrate W ₁ after the film thickness correction guide bar 8 is arranged as described above will be described.

First, the substrate W ₁ is held on the substrate holder 2, the decompression chamber 1 is depressurized to a predetermined vacuum degree, and then the substrate W ₁ is depressurized.
Ar and O ₂ gas, H ₂ O from Ar, O ₂ introduction line 6
H ₂ O is introduced from the introduction line 7 and RF is applied to the target 3.
At least one of the high frequency voltage of the power source 4 and the DC voltage of the DC power source 5 is applied to generate plasma P ₁ by so-called magnetron sputter discharge.

The target 3 is sputtered by the positive ions of the plasma P ₁ and is partially oxidized by the oxidizing active species near the surface of the target 3 toward the substrate W ₁ on the rotating substrate holder 2. Is released. At that time, the movement of the particles is partially obstructed by the film thickness correction guide rod 8 provided in the vicinity of the target, and the amount of the particles deposited on the substrate W ₁ on the substrate holder 2 is controlled.

The sputtered particles reaching the substrate W ₁ in this way, is oxidized by the plasma P ₁ and during oxidation active species in the vicinity of the surface of the substrate W _1, oxide thin film is formed on the surface of the substrate W ₁ .

As described above, the optical constants and the substantially uniform properties of the thin film formed by determining the arrangement of the film thickness correction guide rod 8 by the simulation of this embodiment are sufficient for general optical applications. You can get something.

As described above, by using the simulation of the present embodiment, the arrangement of the film thickness correction guide bar 8 can be determined easily and with the minimum number of trials. In most cases, the optical constants and substantially uniform film thicknesses of the present embodiment may be sufficient for most optical applications without fine adjustment, depending on the conditions. If necessary, the diameter of the film thickness correction guide bar 8 is made smaller, and
It is also possible to introduce a function corresponding to it and perform further calculations to improve the substantially uniformity.

Further, since the calculation of this embodiment for determining the arrangement of the film thickness correction guide bar 8 uses only the experimental result without using any physical constants such as plasma parameters, the calculated result and the experimental result are very large. Since they match with high accuracy, the conditions for forming a substantially uniform film over a large area can be determined in a short time. In addition, this calculation method does not depend on the size of the target, and even if rods having different thicknesses are used, it is possible to easily cope with them by preparing different functions with different coefficients, so that a flexible device configuration can be constructed.

From the above, it is possible to minimize the number of trials and errors and to secure the film thickness uniformity in a large area, and to stabilize a high quality optical thin film such as a dichroic filter having excellent optical characteristics. Then, it becomes possible to form a large amount of film. (Second Embodiment) FIG. 6 shows a schematic configuration diagram of a sputtering film forming apparatus of this embodiment used for forming a multilayer optical thin film.

The sputter film forming apparatus of the present embodiment is a so-called in-line type sputter film forming apparatus, and basically has been described in the first embodiment except that the substrate holder 22 moves parallel to the direction of arrow B. Since it is similar to the sputtering film forming apparatus, detailed description thereof will be omitted.

The sputtering film forming apparatus of the present embodiment is a substrate wafer.
The substrate W held on the upper surface of the rudder 22 ₂But the decompression chamber
The inside of 21 is maintained at a predetermined degree of vacuum and the outside (not shown)
Is loaded into the decompression chamber 21 from the above device, and then A
r, O₂Ar gas and O from the introduction line 26₂Gas, H₂O
From the introduction line 27 to H₂Introduce O, target 23
To the RF power source 2 via the matching network 24a.
4 high frequency voltage or low pass filter 25a
At least one of the DC voltage from the DC power supply 25
Applying a so-called magnetron sputter discharge
Zuma P₂To generate an oxide thin film on the substrate W₂On the surface of
To film. After the thin film is formed, the substrate W₂Does the following
In order to perform the operation, it is carried out from the decompression chamber 21.
ing.

The film thickness correction guide bar 28 in this embodiment
Similarly to the method according to the first embodiment, the arrangement of is an approximate expression that very accurately matches the experimental result obtained by measuring the amount of decrease in the film thickness by the film thickness correction guide rod 28 installed at a specific position. It is decided based on the result of the simulation using. Therefore, also in the present embodiment, as in the first embodiment, a thin film having sufficient optical constants and substantially uniformness for general optical applications can be formed with a simple and minimum number of trials. It is possible to determine the arrangement of the film thickness correction guide bar 8 for this purpose.

[0044]

EXAMPLES The apparatus and method of the present invention will now be described in more detail by way of examples, which should not be construed as limiting the invention.

In this example, the multilayer optical thin film was formed on the substrate by using the sputtering film forming apparatus described in the first embodiment. Therefore, in the following description, the reference numerals used in the description of the first embodiment will be used.

First, the guide rod fixing jig 8a is set on the target cover 3a. This guide rod fixing jig 8
Since a is fixed to the target cover 3a, it is not electrically grounded. The target 3 is made of Ti,
A size of 127 mm × 381 mm was used.

Next, film formation is performed under normal conditions without installing the film thickness correction guide rod 8. At that time, the substrate 12-1, the substrate 12-2, ..., The substrate 12-5 are arranged at regular intervals as shown in FIG. 5 so that the distribution of the film thickness in a necessary range can be seen. Each substrate is circular with a diameter of 30 mm, and the arrangement interval is 5
It is 0 mm.

Next, the film thickness correction guide bar 8 has a size of 12
Only one rod 8-11 is installed near the center of the target 3 made of Ti having a size of 7 mm × 381 mm. The diameter of the film thickness correction guide bar 8 is 3 mm, and the installation interval is 10 mm. The substrate 12-1, the substrate 12-2, ... The substrate 12-5 is
Similarly, circular ones having a diameter of 30 mm are arranged at intervals of 50 mm. Then, the film formation is performed again under the same conditions as the film formation without using the film thickness correction guide rod 8. As a result, a thin film having a reduced film thickness is formed around the substrate W ₁ near the front where the film thickness correction guide bar 8 is installed.

In FIG. 4, a rod 8-11 is provided at the center of the target 3.
Is located on the front side of which is a substrate 12-3. In Figure 7,
The film thickness distribution at this time is illustrated as a graph in which the horizontal axis represents the substrate position and the vertical axis represents the film thickness. The solid line is the case where the film thickness correction guide rod 8 is not installed, and the wavy line is the case where only the rod 8-11 is installed. It should be noted that FIG. 7 shows a position where the film thickness becomes maximum when the film thickness correction guide bar 8 is not installed (position 0 m in FIG.
The film thickness at all positions before and after the correction is represented by relative values with m) set to 100%.

From FIG. 7, it can be seen that the film thickness is reduced around the substrate 12-3 (position 0 mm in FIG. 7). Table 1 shows the amount of decrease as a numerical value. Stick 8-11
Centering on the substrate 12-3 in the front of the position where is installed, the substrate 12-2 and the substrate 12-4, the substrate 12-1 and the substrate 1
2-5 shows the same degree of decrease.

[0051]

[Table 1]

In this embodiment, the width of decrease in the substrate in front of the rod is a symmetrical exponential function y = a × ex centered on the same position.
It was approximated by p (−b × x ² ). Where x is target 3
Represents the position when the axis is in the longitudinal direction of the target 3 with the center as the origin, and the minus direction is the upper part of the target 3. In this way, the values obtained by averaging the values of the substrate 12-2 and the substrate 12-4, and the substrate 12-1 and the substrate 12-5 are used in order to approximate with a function having a symmetrical shape with respect to the origin. Then the coefficients are a = 0.033, b = 0.00
It becomes 023. FIG. 8 is a graph showing the experimental values and the above-described calculation results by the exponential function, with the horizontal axis representing the substrate position and the vertical axis representing the correction amount of the film thickness. From this calculation result, it is possible to quantitatively predict what percentage the film thickness on which substrate will be reduced by the film thickness correction guide rod 8 installed at a specific position. In the present embodiment, this approximation method uses the target 3
When the rods were installed at any of the above positions, they were in good agreement with the experimental results, and even when multiple rods were installed, the results of the experiments were in agreement with the experimental results by adding the film thickness reduction amounts.

FIG. 9 shows a graph of the corrected film thickness distribution and the experimentally obtained film thickness distribution. In FIG. 9, the solid line is the distribution prediction result of the film thickness by the arrangement obtained as a result of the calculation so that the film unevenness is minimized, and the wavy line is the measured value.

The film thickness correction guide bar 8 actually arranged is 8-
5, 8-6, 8-8, 8-9, 8-13, 8-15, 8
-17, 8-19, 8-20. Although a slight deviation occurs in the absolute value, the film unevenness is resolved almost as calculated. In this case, the film unevenness was suppressed to ± 1% or less, and the reproducibility was good. Although the above results are for the Ti target, they are also effective when used for another metal target such as Ta or a target such as Si.

As described above, the optical constants and the substantially uniform properties of the thin film formed by determining the arrangement of the film thickness correction guide rod 8 by the simulation of this embodiment are sufficient for general optical applications. Was given.

[0056]

As described above, according to the present invention, the arrangement of the rods for controlling the film thickness can be determined easily and with the minimum number of trials. Further, in the present invention, since only the experimental result is used without using any physical constant such as plasma parameter, in most cases, the uneven distribution of the film thickness is ± 1.0% without fine adjustment depending on the condition. Can fit within.

From the above, it is possible to minimize the number of trials and errors and to secure the film thickness uniformity in a large area, and to stabilize a high quality optical thin film such as a dichroic filter having excellent optical characteristics. Then, it becomes possible to form a large amount of film.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of an example of a sputtering film forming apparatus according to a first embodiment of the present invention.

FIG. 2 is a three-view drawing of a jig for fixing a guide rod in the sputtering film forming apparatus of the present invention.

FIG. 3 is a view showing a state where a film thickness correction guide rod is fixed to the guide rod fixing jig shown in FIG.

FIG. 4 is a diagram illustrating a positional relationship among a target, a film thickness correction guide rod, and a substrate according to the first embodiment of the present invention.

FIG. 5 is a flowchart illustrating a method for determining the number and arrangement of film thickness correction guide rods required to obtain a substantially uniform film thickness according to the first embodiment of the present invention.

FIG. 6 is a schematic configuration diagram of an example of a sputtering film forming apparatus according to a second embodiment of the present invention.

FIG. 7 is a graph showing the results obtained in one embodiment of the present invention before correction,
5 is a graph comparing the relative film thickness with respect to the position of the substrate after correction with the film thickness correction guide bar.

FIG. 8 is a graph comparing an experimental value and a calculated value by an exponential function approximating the experimental value of the correction amount of the film thickness obtained in one example of the present invention.

FIG. 9 is a graph comparing the experimental value and the calculated value of the film thickness distribution in one example of the present invention.

[Explanation of symbols]

1, 21 Decompression chamber 2, 22 Substrate holder 3, 23 Target 4, 24 RF power supply 5, 25 DC power supply 6, 26 Ar, O ₂ line 7, 27 H ₂ O introduction line 8, 28 Film thickness correction guide bar 9 Film Thickness correction guide rod 8 Fixing jig 10 Hole 11 Screw hole 12 Glass substrate P ₁ , P ₂ Plasma W ₁ , W ₂ substrate

Claims (6)

[Claims] 1. The number of rods installed between the target and the substrate for controlling the film thickness distribution of a thin film formed on the substrate by sputtering a target made of a metal or a dielectric, and In a simulation method for obtaining a position at which the rod is arranged, a first step of forming the thin film without installing the rod, and a second step of forming at least one of the rods to form the thin film And a step of obtaining a function approximating a difference in film thickness of each thin film formed in the first step and the second step, and a calculated value of the unevenness of the film thickness based on the function is minimum. And a step of determining the number of rods and the position where the rods are to be arranged. 2. The number of rods installed between the target and the substrate for controlling the film thickness distribution of a thin film formed on the substrate by sputtering a target made of metal or dielectric, and A recording medium recording a program for causing a computer to execute a simulation of a film thickness of a thin film for determining a position where the rod is arranged, the thin film formed without installing the rod, and at least one The number of rods and the rods are arranged such that the calculated value of the unevenness of the film thickness based on a function approximating the difference in film thickness with the thin film formed by installing the rods is minimized. A recording medium on which a program for causing a computer to execute a process for obtaining a position to be recorded is recorded. 3. A bar material is installed between a metal or dielectric target and a substrate in a vacuum container capable of decompressing to control the film thickness distribution of a thin film formed on the substrate. However, in the thin film forming method of forming the thin film, a first step of forming the thin film without installing the rod member, and a second step of forming at least one rod member to form the thin film A step of obtaining a function approximating a difference in film thickness of each thin film formed in the first step and the second step, and a calculated value of the unevenness of the film thickness based on the function is minimum. The third step of obtaining the number of the rods and the position where the rods are arranged, and the number of the rods obtained in the third step,
And a step of disposing the thin film at the position obtained in the step of. 4. A sputtering film forming apparatus having a substrate holding member for holding a substrate on which a thin film is to be formed and a target holding member for holding a target inside a vacuum container, wherein the target and the substrate are provided. In addition, the bar material for controlling the film thickness distribution has a bar material holding member which can be arranged at the number and the position determined by the simulation method according to claim 1 and which detachably holds each bar material. A sputtering film forming apparatus characterized by: 5. The substrate holding member rotates, and the rod member holding member holds each rod member such that the longitudinal direction of each rod member is substantially parallel to the tangent line of the substrate holding member in the rotation direction. The sputtering film forming apparatus according to claim 4. 6. The sputtering film forming apparatus according to claim 4, wherein the substrate holding member is provided movably in a direction substantially parallel to a longitudinal direction of each of the rods held by the rod holding member. .