CN117467964A - Method for adjusting thickness of magnetron sputtering coating - Google Patents
Method for adjusting thickness of magnetron sputtering coating Download PDFInfo
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- CN117467964A CN117467964A CN202311452927.4A CN202311452927A CN117467964A CN 117467964 A CN117467964 A CN 117467964A CN 202311452927 A CN202311452927 A CN 202311452927A CN 117467964 A CN117467964 A CN 117467964A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 74
- 239000011248 coating agent Substances 0.000 title claims abstract description 50
- 238000000576 coating method Methods 0.000 title claims abstract description 50
- 238000004544 sputter deposition Methods 0.000 claims abstract description 179
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 131
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 50
- 239000007789 gas Substances 0.000 claims description 34
- 229910052786 argon Inorganic materials 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005259 measurement Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The method for debugging the thickness of the magnetron sputtering coating comprises the following steps: s1, preparing a substrate slice; s2, selecting magnetron sputtering process parameters; s3, performing magnetron sputtering under the selected technological parameters; s4, measuring the thickness of the magnetron sputtered film; s5, if the thickness of the film obtained by measurement is smaller than the minimum thickness, performing step S6, and if the thickness of the film obtained by measurement is not smaller than the minimum thickness, performing step S7; s6, adjusting sputtering power and/or sputtering time, and returning to the step S2; s7, obtaining the calibrated sputtering power P1, the calibrated sputtering time T1, the calibrated sputtering temperature, the calibrated working gas flow and the calibrated film thickness T1 after the film thickness calibration; s8, based on the thickness T2 of the to-be-coated film, the sputtering power P2 of the to-be-coated film and the sputtering time T2 of the to-be-coated film are selected according to T2/T1 = (P2×t2)/(P1×t1), and other technological parameters are selected to be unchanged; s9, performing magnetron sputtering based on the selected technological parameters to be coated.
Description
Technical Field
The disclosure relates to the technical field of thin films, and in particular relates to a method for adjusting the thickness of a magnetron sputtering coating.
Background
In the film manufacturing technology, the film prepared by the magnetron sputtering method has the advantages of compact structure, high component uniformity, high deposition rate and the like. Therefore, the magnetron sputtering method becomes a main method for preparing the metal film.
The metal film is typically used as a metal interconnect layer in semiconductor devices, the thickness of which has a significant impact on the final performance of the device. There may be multiple metal layers in each device and the thickness requirements of each metal film are not uniform. The thickness of the metal film is usually measured by a slicing method or a step meter. The slicing method needs to destroy the silicon wafer, then the scanning electron microscope is used for observing the thickness of the section, the cost is high, and the sample is damaged. When the step instrument measures the thickness of the film, steps are needed to be made on the film in advance, and the height of the steps is measured manually, namely the thickness of the film, and the sample is damaged and the operation is complex.
Typically the different thicknesses may be varied by varying the time. However, when the film thickness is thin or thick, the coating time is short or long. When the coating time is short, the process is ended when the process does not reach a stable state, and the process is uncontrolled. When the coating time is long, the coating efficiency is reduced, and the productivity is reduced. At this time, the power is changed to make the coating time reach a proper length. When the sputtering power is changed, the coating speed is changed, and the film thickness needs to be recalibrated. Therefore, there is a need for a method of tuning the thickness of a film to determine the thickness of the film so that the thickness does not have to be recalibrated each time.
Disclosure of Invention
In view of the problems in the background art, an object of the present disclosure is to provide a method for adjusting the thickness of a magnetron sputtering coating film, which can determine the thickness of the film so as not to have to recalibrate the thickness each time.
Therefore, the method for debugging the thickness of the magnetron sputtering coating comprises the following steps: s1, preparing a substrate slice; s2, selecting technological parameters of magnetron sputtering, including at least sputtering power, sputtering time, sputtering temperature and working gas flow, wherein the sputtering power is not less than the minimum sputtering power, and the sputtering time is not less than the minimum sputtering time; s3, performing magnetron sputtering under the selected technological parameters; s4, measuring the thickness of the magnetron sputtered film; s5, judging whether the thickness of the measured film is larger than the minimum thickness, if so, performing step S6, and if not, performing step S7; s6, adjusting sputtering power and/or sputtering time, returning to the step S2, and executing the cycle from the step S2 to the step S5; s7, obtaining the calibrated sputtering power P1, the calibrated sputtering time T1, the calibrated sputtering temperature, the calibrated working gas flow and the calibrated film thickness T1 after the film thickness calibration; s8, based on the obtained nominal sputtering power P1, nominal sputtering time T1 and nominal film thickness T1 after the film thickness calibration and based on the thickness T2 of the film to be coated, selecting the sputtering power P2 of the film to be coated and the sputtering time T2 of the film to be coated according to T2/T1= (P2 x T2)/(P1 x T1) and other technological parameters to be unchanged, wherein the thickness T2 of the film to be coated is not smaller than the minimum thickness, the sputtering power P2 of the film to be coated is not smaller than the minimum sputtering power, and the sputtering time T2 of the film to be coated is not shorter than the minimum sputtering time; s9, performing magnetron sputtering based on the selected technological parameters to be coated.
The beneficial effects of the present disclosure are as follows: based on the debugging method of the magnetron sputtering coating thickness, calibration of the magnetron sputtering coating thickness can be realized through the steps S1 to S7, and after calibration, corresponding technological parameters can be selected based on the thickness T2 to be coated in the step S8 to carry out coating in the step S9. Therefore, only the calibration of the thickness of the magnetron sputtering coating film in the steps S1 to S7 and the selection of the technological parameters including at least sputtering power, sputtering time, sputtering temperature and working gas flow in the step 8 are needed to be carried out, and the thickness calibration is not needed to be carried out again after the step S9 is carried out, so that the time and the cost for calibrating the thickness are reduced in the large-scale production of the magnetron sputtering coating film.
Drawings
Fig. 1 is a schematic plan view of an exemplary magnetron sputtering apparatus.
Fig. 2 is a flow chart of a method of tuning the thickness of a magnetron sputter coating according to the present disclosure.
FIG. 3 is a photograph of a slice of step S4 of the method for adjusting the thickness of a magnetron sputtering coating film of example 1.
Fig. 4 is a slice photograph of step S10 of the method for adjusting the thickness of the magnetron sputtering coating film of example 1.
FIG. 5 is a photograph of a slice of step S4 of the method for adjusting the thickness of a magnetron sputtering coating film of example 2.
FIG. 6 is a photograph of a slice of step S10 of the method for adjusting the thickness of a magnetron sputtering coating film of example 2.
FIG. 7 is a photograph of a slice of step S4 of the method for adjusting the thickness of a magnetron sputtering coating film of example 3.
FIG. 8 is a photograph of a slice of step S10 of the method for adjusting the thickness of a magnetron sputtering coating film of example 3.
Wherein reference numerals are as follows:
100 magnetron sputtering equipment 16 casing
D up-down 17 screw
1 cavity 2 base
11 bottom wall 3 magnet
12 peripheral wall 4 gas supply pipe
13 roof 5 exhaust pipe
14 internal space 200 substrate sheet
15 top cover 300 target material
Detailed Description
The drawings illustrate embodiments of the present disclosure, and it is to be understood that the disclosed embodiments are merely examples of the disclosure that may be embodied in various forms and that, therefore, specific details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one skilled in the art to variously practice the disclosure.
[ magnetron sputtering Equipment ]
Fig. 1 is a plan view schematic of an exemplary magnetron sputtering apparatus.
Referring to fig. 1, the magnetron sputtering apparatus 100 includes a chamber 1, a susceptor 2, a magnet 3, an air supply pipe 4, and an exhaust pipe 5.
The chamber 1 has a bottom wall 11, a peripheral wall 12, and a top wall 13, and an inner space 14 surrounded by the bottom wall 11, the peripheral wall 12, and the top wall 13, the top wall 13 being for holding a target 300 connected to a cathode (not shown) thereunder. The chamber 1 comprises a removable (e.g. by screws) top cover 15 and a housing 16. The susceptor 2 is positioned above the bottom wall 11, the susceptor 2 being adapted to support the substrate sheet 200 and to be connected to an anode (not shown). The magnet 3 is located between the ceiling 13 and the target 300 and positioned to face the susceptor 2 in the up-down direction D, and the magnet 3 is configured to apply a magnetic field to the target 300. The gas supply pipe 4 is used for controlling the working gas source (when the plating film on the substrate sheet 200 is a metal film, the working gas is argon, and when the plating film on the substrate sheet 200 is a metal compound, the working gas is argon and a gas corresponding to a component of the metal compound other than metal, for example, the plating film on the substrate sheet 200 is a TiN film, and the working gas is argon and nitrogen) and the internal space 14 of the chamber 1 to be communicated with the outside. An exhaust pipe 5 is provided at the bottom wall 11, the exhaust pipe 5 being adapted to bring the interior space 14 of the chamber 1 into controlled communication with an external evacuation device (not shown). The exhaust pipe 5 and the gas supply pipe 4 are located at opposite sides of the base 2.
The substrate sheet 200 may be any suitable material that requires plating, such as a metal material.
The fixation of the target 300 may be performed in any suitable manner. In fig. 1, the edge of the target 300 may be fixedly attached to the ceiling 13 by screws 17. The fixing of the magnets 3 may be in any suitable way, for example, the magnets 3 being fixed to the top wall 13 by means of respective mounts (not shown).
Note that the cathode and the anode refer to a cathode and an anode of a power supply. In one example, the power source is a direct current power source. The "controlled" communication may be achieved by providing corresponding control valves.
[ method for adjusting the thickness of magnetron sputtering coating ]
Fig. 2 is a flow chart of a method of tuning the thickness of a magnetron sputter coating according to the present disclosure.
Referring to fig. 2, the method for adjusting the thickness of the magnetron sputtering coating film comprises the following steps:
s1, preparing a substrate sheet 200;
s2, selecting technological parameters of magnetron sputtering, including at least sputtering power, sputtering time, sputtering temperature and working gas flow, wherein the sputtering power is not less than the minimum sputtering power, and the sputtering time is not less than the minimum sputtering time;
s3, performing magnetron sputtering (for example, using the magnetron sputtering device 100 of FIG. 1) under the selected technological parameters;
s4, measuring the thickness of the magnetron sputtered film;
s5, judging whether the thickness of the measured film is not smaller than the minimum thickness, if so, performing step S6, and if so, performing step S7;
s6, adjusting sputtering power and/or sputtering time, returning to the step S2, and executing the cycle from the step S2 to the step S5;
s7, obtaining the calibrated sputtering power P1, the calibrated sputtering time T1, the calibrated sputtering temperature, the calibrated working gas flow and the calibrated film thickness T1 after the film thickness calibration;
s8, based on the obtained nominal sputtering power P1, nominal sputtering time T1 and nominal film thickness T1 after the film thickness calibration and based on the thickness T2 of the film to be coated, selecting the sputtering power P2 of the film to be coated and the sputtering time T2 of the film to be coated according to T2/T1= (P2 x T2)/(P1 x T1) and other technological parameters to be unchanged, wherein the thickness T2 of the film to be coated is not smaller than the minimum thickness, the sputtering power P2 of the film to be coated is not smaller than the minimum sputtering power, and the sputtering time T2 of the film to be coated is not shorter than the minimum sputtering time;
s9, performing magnetron sputtering (likewise, for example, using the magnetron sputtering apparatus 100 of fig. 1) based on the selected process parameters to be coated.
Based on the debugging method of the magnetron sputtering coating thickness, calibration of the magnetron sputtering coating thickness can be realized through the steps S1 to S7, and after calibration, corresponding technological parameters can be selected based on the thickness T2 to be coated in the step S8 to carry out coating in the step S9. Therefore, only the calibration of the thickness of the magnetron sputtering coating film in the steps S1 to S7 and the selection of the technological parameters including at least sputtering power, sputtering time, sputtering temperature and working gas flow in the step 8 are needed to be carried out, and the thickness calibration is not needed to be carried out again after the step S9 is carried out, so that the time and the cost for calibrating the thickness are reduced in the large-scale production of the magnetron sputtering coating film.
In step S5, the minimum thickness is a minimum value of the thickness of the thin film in which the relationship between the thickness of the thin film and the growth rate of the thin film is established by changing the sputtering time with other process parameters of the magnetron sputtering unchanged to determine that the thin film growth rate is stable and then the thickness of the thin film and the sputtering time show a linear relationship.
In one example, the substrate sheet is an empty silicon wafer or a silicon wafer with a dielectric layer grown. For example, the dielectric layer is silicon oxide or silicon nitride.
In one example, in step S2 and step S8, the minimum sputtering power is 1KW and the minimum sputtering time is 20S.
In one example, the sputtering power is the output power of a DC power supply (i.e., the DC power supply of the magnetron sputtering apparatus 100).
In one example, in step S2, the selected sputter power is in the range of 1KW-5KW (i.e., 1KW is the minimum sputter power), the selected sputter time is in the range of 20-150S (i.e., 20S is the minimum sputter time), the selected working gas flow is in the range of 30-100mL/min, and the selected sputter temperature is in the range of 30-300 ℃. Further, in step S2, for the titanium thin film, the selected sputtering power is 1KW, the selected sputtering time is 100S, the working gas is argon, the selected argon flow is 50mL/min, and the selected sputtering temperature is 30 ℃; for the aluminum film, the selected sputtering power is 1KW, the selected sputtering time is 60s, the working gas is argon, the selected argon flow is 30mL/min, and the selected sputtering temperature is 150 ℃; for the titanium nitride film, the selected sputtering power is 3KW, the selected sputtering time is 150s, the working gases are argon and nitrogen, the selected argon flow is 30mL/min, the selected nitrogen flow is 80mL/min, and the selected sputtering temperature is 30 ℃.
In one example, in step S4, the thickness of the thin film is measured using a step-by-step method or a dicing method.
In one example, in step S5, the minimum thickness is 20nm.
In an example, in step S6, the sputtering power or sputtering time is adjusted.
In an example, in steps S3 and S9, the material of the magnetron sputtered target 300 is titanium (Ti), aluminum (Al). But is not limited thereto, any applicable metal may be selected as the material of the magnetron sputtering target 300. In addition, in step S3 and step S9, during magnetron sputtering, the gas supply pipe 4 keeps supplying the working gas to the inner space 14 of the chamber 1, and the gas exhaust pipe 5 keeps communicating with an external evacuating device (not shown) to evacuate, so that the inner space 14 in the chamber 1 is maintained at a prescribed pressure. For example, the pressure of magnetron sputtering is 2-10mT.
In an example, to verify the thickness T2 of the film to be coated based on the step S8 and the thickness of the film obtained after the step S9 is performed, the method for adjusting the thickness of the magnetron sputtering coating further includes the steps of: s10, measuring the thickness of the magnetron sputtering film and comparing the thickness with the thickness T2 to be coated in the step S8. Note that step S10 is for verification only and not for mass production. After the verification in step S10 is completed, the mass production may be performed by directly performing step S9 according to the process parameters (i.e., the process parameters including at least the sputtering power, the sputtering time, the sputtering temperature, and the flow rate of the working gas) at the thickness T2 to be coated selected in step S8, because the verification in step S10 is already performed before the mass production.
Also, in an example, in step S10, the thickness of the thin film is measured using a step meter method or a dicing method.
[ test ]
A. Determining minimum thickness
With the magnetron sputtering apparatus 100, the substrate sheet 200 is SiO with a thickness of 300nm 2 Taking titanium (Ti) with the target 300 as a purity of 5N as an example, the silicon wafer of the dielectric layer has a sputtering power (i.e., the output power of the dc power supply of the magnetron sputtering apparatus 100) of 1KW, and the flow rate of argon gas as a working gas supplied into the internal space 14 of the chamber 1 through the gas supply pipe 4 is 50mL/min, and the sputtering temperature is 30 ℃, and the exhaust pipe 5 is kept in communication with an external evacuating device to evacuate to maintain the internal space 14 in the chamber 1 at 5mT.
Table 1 shows the relationship between the sputtering time, the film thickness, and the growth rate, wherein the growth rate is the film thickness divided by the time, and the film thickness was measured by the slicing method.
TABLE 1 sputtering time, film thickness and growth rate relationship
| Sputtering time(s) | Film thickness (nm) | Growth Rate (nm/s) |
| 5 | 7.7 | 1.5 |
| 7 | 10.7 | 1.5 |
| 15 | 17 | 1.1 |
| 20 | 20.5 | 1.0 |
| 30 | 30.7 | 1.0 |
| 40 | 41 | 1.0 |
As seen from Table 1, at a film thickness of 20nm or more, the growth rate of the film tended to be stable, and the film thickness and the sputtering time exhibited a linear relationship, thereby determining that the minimum thickness was 20nm.
Note that, for the debugging of the magnetron sputtering coating thickness in the following part B, although the coating rate is stable only after the titanium data prove that the thickness of the thin film is larger than 20nm, the minimum film thickness of 20nm is applicable because the target coating growth modes of different materials are the same in the magnetron sputtering process.
B. Adjustment of magnetron sputtering coating thickness
Before mass production, the thickness adjustment (including verification) is carried out by adopting a magnetron sputtering coating thickness adjustment method.
Example 1 (for titanium (Ti) films)
The method for adjusting the thickness of the magnetron sputtering coating adopts the following steps:
s1, preparing a substrate slice 200, wherein the substrate slice 200 is SiO with the thickness of 300nm 2 Silicon slice of dielectric layer;
s2, selecting technological parameters of magnetron sputtering, wherein the sputtering power is 1KW, the sputtering time is 100S, the sputtering temperature is 30 ℃, the process gas is argon and the argon flow is 50mL/min, the sputtering power is not less than the minimum sputtering power (the minimum sputtering power is 1 KW), and the sputtering time is not shorter than the shortest sputtering time (the shortest sputtering time is 20S);
s3, performing magnetron sputtering by using the magnetron sputtering equipment 100 under the process parameters selected in the step S2, wherein the target 300 is titanium with the purity of 5N, and the internal space 14 in the cavity 1 is maintained at 5mT;
s4, measuring the thickness of the film subjected to the magnetron sputtering in the step S3 by adopting a slicing method to be 103nm, as shown in FIG. 3;
s5, judging whether the thickness of the measured film is smaller than the minimum thickness (namely, the minimum thickness determined by the part A is 20 nm), and if the thickness of the measured film (namely, the thickness of the measured film is 103nm obtained in the step S4) is larger than the minimum thickness, performing the step S7 without performing the step S6 in the figure 2;
s7, obtaining the calibrated sputtering power P1 of 1KW, the calibrated sputtering time T1 of 100S, the calibrated sputtering temperature of 30 ℃, the calibrated argon flow of 50mL/min and the calibrated film thickness T1 of 103nm after the film thickness calibration;
s8, based on the obtained nominal sputtering power P1, nominal sputtering time T1 and nominal film thickness T1 after the film thickness calibration and based on the thickness T2 of the film to be coated being 111nm (i.e. the thickness T2 of the film to be coated is not less than the minimum thickness), the sputtering power P2 of the film to be coated and the sputtering time T2 of the film to be coated are selected according to T2/T1 = (P2 x T2)/(P1 x T1) and the other process parameters are selected to be unchanged, namely (P2 x T2) = T2/T1× (P1 x T1) = 111nm/103nm× (1 KW x 100S) = 107.8KW.s, the sputtering power P2 of the film to be coated is selected to be 3KW (i.e. not less than the minimum sputtering power), and the sputtering time T2 of the film to be coated is selected to be 35.9S (i.e. not less than the minimum sputtering time);
s9, performing magnetron sputtering based on the process parameters to be coated selected in the step S8, and similarly, maintaining the same internal space 14 in the cavity 1 as that in the step S3 (namely, at 5 mT);
s10, measuring the thickness of the magnetron sputtered film in the step S9 (fig. 4) by adopting a slicing method and comparing the thickness with the thickness T2 to be coated in the step S8. As shown in fig. 4, the thickness of the magnetron sputtered thin film of step S9 measured in step S10 is in the range of 111-113nm, which coincides with the thickness T2 to be coated of step S8 being 111nm, within the allowable production range.
Example 2 (for aluminum (Al) film)
The method for adjusting the thickness of the magnetron sputtering coating adopts the following steps:
s1, preparing a substrate slice 200, wherein the substrate slice 200 is SiO with a thickness of 90nm 2 Silicon slice of dielectric layer;
s2, selecting technological parameters of magnetron sputtering, wherein the sputtering power is 1KW, the sputtering time is 60S, the sputtering temperature is 150 ℃, the process gas is argon and the argon flow is 30mL/min, the sputtering power is not less than the minimum sputtering power (the minimum sputtering power is 1 KW), and the sputtering time is not shorter than the shortest sputtering time (the shortest sputtering time is 20S);
s3, performing magnetron sputtering by using the magnetron sputtering equipment 100 under the process parameters selected in the step S2, wherein the target 300 is aluminum (Al) with the purity of 5.5N, and the internal space 14 in the cavity 1 is maintained at 3mT;
s4, measuring the thickness of the film subjected to the magnetron sputtering in the step S3 by adopting a slicing method to be 83nm, as shown in FIG. 5;
s5, judging whether the thickness of the measured film is smaller than the minimum thickness (namely, the minimum thickness determined by the part A is 20 nm), and if the thickness of the measured film (namely, 83nm obtained in the step S4) is larger than the minimum thickness, performing the step S7 without performing the step S6 in the figure 2;
s7, obtaining the calibrated sputtering power P1 of 1KW, the calibrated sputtering time T1 of 60S, the calibrated sputtering temperature of 150 ℃, the calibrated argon flow of 30mL/min and the calibrated film thickness T1 of 83nm after the film thickness calibration;
s8, based on the obtained nominal sputtering power P1, nominal sputtering time T1 and nominal film thickness T1 after the film thickness calibration and based on the thickness T2 of the film to be coated being 300nm (namely, the thickness T2 of the film to be coated is not smaller than the minimum thickness), the sputtering power P2 of the film to be coated and the sputtering time T2 of the film to be coated are selected according to T2/T1= (P2 x T2)/(P1 x T1) and the other process parameters are selected to be unchanged, namely (P2 x T2) =T2/T1× (P1 x T1) =300 nm/83nm× (1 KW x 60S) = 216.9 KW.s, the sputtering power P2 of the film to be coated is selected to be 5KW (namely, not smaller than the minimum sputtering power), and the sputtering time T2 of the film to be coated is 43.4S (namely, not shorter than the minimum sputtering time);
s9, performing magnetron sputtering based on the process parameters to be coated selected in the step S8, and similarly, maintaining the same internal space 14 in the cavity 1 as that in the step S3 (namely, at 3 mT);
s10, measuring the thickness of the magnetron sputtered film in the step S9 (fig. 6) by adopting a slicing method and comparing the thickness with the thickness T2 to be coated in the step S8. As seen from fig. 6, the thickness of the magnetron sputtered thin film of step S9 measured in step S10 is 302nm, which is very close to the thickness T2 to be plated of step S8, which is 300nm, within the allowable production range.
Example 3 (for titanium nitride (TiN) film)
The method for adjusting the thickness of the magnetron sputtering coating adopts the following steps:
s1, preparing a substrate slice 200, wherein the substrate slice 200 is a silicon wafer;
s2, selecting technological parameters of magnetron sputtering, wherein the sputtering power is 3KW, the sputtering time is 150S, the sputtering temperature is 30 ℃, the process gas is argon and nitrogen, the argon flow is 30mL/min, the nitrogen flow is 80mL/min, the sputtering power is not less than the minimum sputtering power (the minimum sputtering power is 1 KW), and the sputtering time is not shorter than the minimum sputtering time (the minimum sputtering time is 20S);
s3, performing magnetron sputtering by using the magnetron sputtering equipment 100 under the process parameters selected in the step S2, wherein the target 300 is titanium (Ti) with the purity of 5N;
s4, measuring the thickness of the film subjected to the magnetron sputtering in the step S3 by adopting a slicing method to be 100nm, as shown in FIG. 7;
s5, judging whether the thickness of the measured film is smaller than the minimum thickness (namely, the minimum thickness determined by the part A is 20 nm), and if the thickness of the measured film (namely, 100nm obtained in the step S4) is larger than the minimum thickness, performing the step S7 without performing the step S6 in the figure 2;
s7, obtaining the calibrated sputtering power P1 of the film thickness after calibration, wherein the calibrated sputtering time T1 is 150S, the calibrated sputtering temperature is 30 ℃, the calibrated argon flow is 30mL/min, the calibrated nitrogen flow is 80mL/min, and the calibrated film thickness T1 is 100nm;
s8, based on the obtained nominal sputtering power P1, nominal sputtering time T1 and nominal film thickness T1 after the film thickness calibration and based on the thickness T2 of the film to be coated being 133nm (namely, the thickness T2 of the film to be coated is not less than the minimum thickness), the sputtering power P2 of the film to be coated and the sputtering time T2 of the film to be coated are selected according to T2/T1= (P2 x T2)/(P1 x T1) and the other process parameters are selected to be unchanged, namely (P2 x T2) =T2/T1× (P1 x T1) =133 nm/100nm× (3 KW x 150S) = 598.5 KW.s, the sputtering power P2 of the film to be coated is selected to be 6KW (namely, not less than the minimum sputtering power), and the sputtering time T2 of the film to be coated is selected to be 99.8S (namely, not less than the minimum sputtering time);
s9, performing magnetron sputtering based on the process parameters to be coated selected in the step S8, and similarly, maintaining the same internal space 14 in the cavity 1 as that in the step S3 (namely, at 7 mT);
s10, measuring the thickness of the magnetron sputtered film in the step S9 (fig. 8) by adopting a slicing method and comparing the thickness with the thickness T2 to be coated in the step S8. As seen from fig. 8, the thickness of the magnetron sputtered thin film of step S9 measured in step S10 is 131nm, which is very close to the thickness T2 to be plated of step S8 is 133nm, within the allowable production range.
The various exemplary embodiments are described using the above detailed description, but are not intended to be limited to the combinations explicitly disclosed herein. Thus, unless otherwise indicated, the various features disclosed herein may be combined together to form a number of additional combinations that are not shown for the sake of brevity.
Claims (10)
1. The method for debugging the thickness of the magnetron sputtering coating is characterized by comprising the following steps:
s1, preparing a substrate slice;
s2, selecting technological parameters of magnetron sputtering, including at least sputtering power, sputtering time, sputtering temperature and working gas flow, wherein the sputtering power is not less than the minimum sputtering power, and the sputtering time is not less than the minimum sputtering time;
s3, performing magnetron sputtering under the selected technological parameters;
s4, measuring the thickness of the magnetron sputtered film;
s5, judging whether the thickness of the measured film is larger than the minimum thickness, if so, performing step S6, and if not, performing step S7;
s6, adjusting sputtering power and/or sputtering time, returning to the step S2, and executing the cycle from the step S2 to the step S5;
s7, obtaining the calibrated sputtering power (P1), the calibrated sputtering time (T1), the calibrated sputtering temperature, the calibrated working gas flow and the calibrated film thickness (T1) after the film thickness calibration;
s8, based on the obtained calibrated sputtering power (P1) of the film thickness, the calibrated sputtering time (T1) and the calibrated film thickness (T1) and based on the thickness (T2) of the film to be coated, selecting the sputtering power (P2) of the film to be coated and the sputtering time (T2) of the film to be coated according to T2/T1= (P2×t2)/(P1×t1) and other technological parameters to be unchanged, wherein the thickness (T2) of the film to be coated is not smaller than the minimum thickness, the sputtering power (P2) of the film to be coated is not smaller than the minimum sputtering power, and the sputtering time (T2) of the film to be coated is not shorter than the minimum sputtering time;
s9, performing magnetron sputtering based on the selected technological parameters to be coated.
2. The method for adjusting the thickness of a magnetron sputtering coating according to claim 1, wherein,
in step S2 and step S8, the minimum sputtering power is 1KW and the minimum sputtering time is 20S.
3. The method for adjusting the thickness of a magnetron sputtering coating according to claim 1, wherein,
in step S2, the selected sputtering power is in the range of 1KW-5KW, the selected sputtering time is in the range of 20-150S, the selected working gas flow is in the range of 30-100mL/min, and the selected sputtering temperature is in the range of 30-300 ℃.
4. The method for adjusting the thickness of a magnetron sputtering coating according to claim 3, wherein,
in the step S2 of the process of the present invention,
for the titanium film, the selected sputtering power is 1KW, the selected sputtering time is 100s, the working gas is argon, the selected argon flow is 50mL/min, and the selected sputtering temperature is 30 ℃;
for the aluminum film, the selected sputtering power is 1KW, the selected sputtering time is 60s, the working gas is argon, the selected argon flow is 30mL/min, and the selected sputtering temperature is 150 ℃;
for the titanium nitride film, the selected sputtering power is 3KW, the selected sputtering time is 150s, the working gases are argon and nitrogen, the selected argon flow is 30mL/min, the selected nitrogen flow is 80mL/min, and the selected sputtering temperature is 30 ℃.
5. The method for adjusting the thickness of a magnetron sputtering coating according to claim 1, wherein,
in step S5, the minimum thickness is a minimum value of the thickness of the thin film in which the relationship between the thickness of the thin film and the growth rate of the thin film is established by changing the sputtering time with other process parameters of the magnetron sputtering unchanged to determine that the thin film growth rate is stable and then the thickness of the thin film and the sputtering time show a linear relationship.
6. The method for adjusting the thickness of a magnetron sputtering coating according to claim 1, wherein,
in step S5, the minimum thickness is 20nm.
7. The method for adjusting the thickness of a magnetron sputtering coating according to claim 1, wherein,
in step S6, the sputtering power or sputtering time is adjusted.
8. The method for adjusting the thickness of a magnetron sputtering coating according to claim 1, wherein,
in step S3 and step S9, the magnetron sputtering target is made of titanium or aluminum.
9. The method for adjusting the thickness of a magnetron sputtering coating according to claim 1, wherein the method for adjusting the thickness of a magnetron sputtering coating further comprises the steps of:
s10, measuring the thickness of the magnetron sputtering film and comparing with the thickness (T2) to be coated in the step S8.
10. The method for adjusting the thickness of a magnetron sputtering coating according to claim 1, wherein,
in step S3 and step S9, the pressure of the magnetron sputtering is 2-10mT.
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