JP2001046985A - Ultrasonic exciting device for substrate end surface and ultrasonic washing device for substrate end surface provided with the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device capable of maintaining high cleanness by washing the end surface of the material to be washed in a non-contact state, capable of avoiding the complication, scale increase and cost rise of the device and capable of attaining saving of washing liq. SOLUTION: In the device, a notched recess 2a to which the end surface, or the vicinity of the end surface, of a substrate is inserted is formed in an ultrasonic tank 2 formed in a form like a hollow box and provided with a vibrator 4 generating ultrasonic vibrations of >=200 kHz at the bottom surface. A washing fluid 12 supplied for washing the surface and the back surface of the substrate is made to flow into the ultrasonic tank 2 from the notched recessed part 2a, stored and excited by the ultrasonic vibrations from the vibrator 4 and washes the end surface and the vicinity of the end surface of the substrate in a non-contact state.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultrasonic excitation device for cleaning an end surface of various substrates such as a semiconductor wafer and a glass substrate, and an ultrasonic cleaning device for a substrate end surface provided with the same.

[0002]

2. Description of the Related Art As a conventional cleaning apparatus for cleaning an end face of a substrate, for example, there is one described in Japanese Patent Application Laid-Open No. 11-625. Hereinafter, a conventional cleaning apparatus for cleaning the end face of a substrate will be described with reference to FIGS.

FIG. 12 is a perspective view showing a conventional cleaning apparatus for cleaning a substrate end face, and FIG. 13 is a sectional view of the conventional cleaning apparatus for cleaning a substrate end face shown in FIG.

[0004] As shown in FIGS. 12 and 13, a conventional cleaning apparatus for cleaning an end face of a substrate includes a pair of rotating brushes 102.
And a rotating brush 103, a pair of edge cleaning rollers 104 and an edge cleaning roller 105, a cleaning liquid supply pipe 106, a cleaning liquid supply nozzle 107, a cleaning liquid supply nozzle 108, and the like.

The semiconductor wafer 101 has upper and lower surfaces sandwiched by a pair of rotating brushes 102 and 103, and an edge portion of the semiconductor wafer 101 having a pair of edge cleaning rollers 104 and an edge cleaning roller. By being held by 105, it is held in a horizontal state.

The cleaning liquid supply pipe 106 for supplying a cleaning liquid to the upper surface of the semiconductor wafer 101 is disposed above the rotating brush 102. The cleaning liquid supply pipe 10
Numeral 6 has a large number of holes (not shown), and the cleaning solution falls from the large number of holes onto the upper surface of the semiconductor wafer 101 and flows along the upper surface. Is also supplied.

The rotating brush 102 and the rotating brush 10
3 extend in the horizontal direction and are arranged side by side in the vertical direction (vertical direction). The rotating brush 102 and the rotating brush 103 have the same structure, and have a configuration in which a shaft member 109 is covered with PVA (polyvinyl alcohol) 110. Also, a large number of protrusions 111 are formed on the surface of the PVA 110,
Is pressed against the semiconductor wafer 101 and is elastically deformed, so that the pressure sandwiching the upper and lower surfaces of the semiconductor wafer 101 can be increased.

The rotating brush 102 and the rotating brush 103 are rotationally driven in directions opposite to each other (in the directions of arrows A and B) by a driving mechanism (not shown), and by rubbing the upper and lower surfaces of the semiconductor wafer 101. Particle contaminants are removed.

The edge cleaning roller 104 and the edge cleaning roller 105 are arranged so that the axis of the shaft 112 is oriented in the vertical direction (vertical direction), and are driven in the same direction (not shown) by a driving mechanism (not shown). It is rotationally driven in the direction of arrow C). The edge cleaning roller 104 and the edge cleaning roller 105 have the same structure, and the shaft 1
12, a roller portion 113 having a V-shaped peripheral groove 113a (shown in FIG. 13) on the outer peripheral surface, and a cleaning elastic member 11 made of PVA or the like coated on the surface of the roller portion 113
4

In the vicinity of the edge cleaning roller 104 and the edge cleaning roller 105, the cleaning liquid supply nozzle 107 and the cleaning liquid supply nozzle 108 are disposed, respectively, and the cleaning liquid is supplied toward the edge of the semiconductor wafer 101. Squirt.

Next, the operation of the conventional cleaning apparatus for cleaning the end face of the substrate having the above configuration will be described.

The rotating brush 102 and the rotating brush 10
3 rotate in opposite directions (the directions of arrows A and B), the semiconductor wafer 101
The force acts in the direction along arrow 1 (direction of arrow D). This force D
Is received by the peripheral groove 113a of the edge cleaning roller 104 and the edge cleaning roller 105, whereby the semiconductor wafer 101 is held in a fixed position, and the edge cleaning roller 104 and the edge cleaning roller 105 are held. Rotate in the direction of arrow E due to the frictional force between

Therefore, the upper and lower surfaces of the semiconductor wafer 101 are uniformly cleaned by the pair of rotating brushes 102 and 103 at the fixed positions. In addition, the semiconductor wafer 101 is cleaned by being rubbed by the cleaning elastic member 114 provided on the pair of the edge cleaning roller 104 and the edge cleaning roller 105 in which the entire peripheral edge of the semiconductor wafer 101 rotates.

[0014]

However, a conventional cleaning apparatus for cleaning an end face of a substrate is provided with the semiconductor wafer 10.
In this configuration, the edge portion is cleaned by contact between the edge portion and the cleaning elastic member 114 provided in the edge portion cleaning roller 104 and the edge portion cleaning roller 105, so that contaminants easily adhere again. There is a problem that it is difficult to maintain the semiconductor wafer 101 with high cleanliness.

The cleaning elastic member 114 does not come into contact with a concave portion 10a (see FIGS. 1 and 6) formed as a mark for positioning on a substrate such as a semiconductor wafer, that is, a so-called V notch. Therefore, there is a problem that a sufficient effect of cleaning the end face of the substrate cannot be obtained.

On the other hand, with the recent high integration of semiconductors, a higher degree of cleanliness is required for cleaning a substrate such as a semiconductor wafer, and the substrate including the recess 10a is also required from the viewpoint of preventing contamination of other processes. There is a need for a cleaning device for a substrate end surface capable of cleaning the end surface with high cleanliness.

In the conventional cleaning apparatus for cleaning the end face of the substrate, the cleaning liquid supply nozzle 107 and the cleaning liquid supply nozzle 108 for jetting the cleaning liquid toward the edge of the semiconductor wafer 101 need to be separately provided. The whole tends to be complicated, large-sized and expensive, and the consumption of the cleaning liquid is large.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and can clean an end face of an object to be cleaned in a non-contact manner and maintain a high degree of cleanliness. It is an object of the present invention to provide an ultrasonic cleaning apparatus for a substrate end face, which can avoid cost increase and can achieve a reduction in cleaning liquid. It is another object of the present invention to provide a substrate end surface ultrasonic excitation device suitable for the substrate end surface ultrasonic cleaning device.

[0019]

According to the present invention, there is provided an ultrasonic exciter for an end face of a substrate, comprising: a vibrator for generating ultrasonic vibrations of 200 kHz or more; and an ultrasonic vibrator formed in a hollow box shape and connected to the vibrator. Having an ultrasonic tank, the ultrasonic tank has a notch concave portion into which the end face of the substrate and the vicinity of the end surface are loosely inserted, and stores therein a cleaning fluid flowing from the notch concave portion and is subjected to the ultrasonic vibration. To excite.

Further, the ultrasonic tank has a reflection plate at an upper end of the notch recess in the traveling direction of the ultrasonic vibration to reflect the ultrasonic vibration toward an end face of the substrate and a vicinity of the end face. is there.

Further, the ultrasonic tank has a drainage duct provided at a position above the surface of the substrate which is loosely inserted into the notch recess and discharges the cleaning fluid.

According to another embodiment of the present invention, there is provided an ultrasonic excitation device for an end face of a substrate, comprising: a vibrator for generating ultrasonic vibration of 200 kHz or more; and a horn coupled to the vibrator for transmitting the ultrasonic vibration. An edge cleaning member attached to a surface of the horn opposite to the surface having the vibrator, wherein the edge cleaning members are parallel to each other across a predetermined space into which the end surface of the substrate and the vicinity of the end surface are loosely inserted. And a first cleaning projection and a second cleaning projection formed in the space, and the cleaning fluid flowing into the space is excited by the ultrasonic vibration.

The space gradually widens upward.

Further, the horn has a surface facing the surface having the vibrator, a conical tapered surface protruding toward the center, and a mounting projection for attaching the end face cleaning member to the center. It is.

[0025] The horn further includes a cooling pipe wound around the body of the horn, and a cooling liquid supply means for supplying a cooling fluid to the cooling pipe to cool the horn.

An ultrasonic cleaning apparatus for an end face of a substrate according to the present invention comprises a driving means for holding and rotating a substrate, a liquid supply means for supplying a cleaning fluid, and an ultrasonic excitation apparatus for exciting the cleaning fluid. An ultrasonic cleaning apparatus for a substrate end face comprising:
The ultrasonic excitation device includes a vibrator that generates ultrasonic vibration of 200 kHz or more, and an ultrasonic tank formed in a hollow box shape and coupled to the vibrator, wherein the ultrasonic tank includes a substrate. And a notch concave portion into which the end surface and the vicinity of the end surface are loosely inserted. The cleaning fluid flowing from the notch concave portion is stored inside and is excited by the ultrasonic vibration.

Also, the liquid film of the cleaning fluid is formed by the action of surface tension between the front surface of the substrate and the upper end of the notch and between the rear surface of the substrate and the lower end of the notch. Is formed.

Further, the liquid supply means supplies the cleaning fluid to the front surface and the back surface of the substrate, respectively.

An ultrasonic cleaning apparatus for a substrate end face according to another embodiment of the present invention comprises a driving unit for holding and rotating a substrate, a liquid supply unit for supplying a cleaning fluid, and an excitation of the cleaning fluid. An ultrasonic cleaning device for an end face of a substrate, comprising:
a vibrator that generates ultrasonic vibration of z or more, a horn to which the vibrator is coupled to transmit the ultrasonic vibration, and an end face cleaning member attached to a surface of the horn that faces the surface having the vibrator Wherein the end face cleaning member comprises a first cleaning projection and a second cleaning projection formed in parallel with each other with a predetermined space into which the end face of the substrate and the vicinity of the end face are loosely inserted, The cleaning fluid flowing into the space is excited by the ultrasonic vibration.

[0030]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the accompanying drawings.

First, an ultrasonic cleaning apparatus for a substrate end surface (including an ultrasonic excitation device for a substrate end surface) as a first embodiment of the present invention will be described with reference to FIGS.

FIG. 1 is a perspective view showing an ultrasonic cleaning apparatus for a substrate end face according to a first embodiment of the present invention. 2A and 2B are diagrams illustrating a substrate end surface ultrasonic excitation device included in the substrate end surface ultrasonic cleaning apparatus illustrated in FIG. 1, wherein FIG.
(B) is a left side view, and (c) is a front view. FIG. 3 is an enlarged cross-sectional view of a part of a semiconductor wafer 10 as a substrate to be cleaned, and FIG. 4 is a schematic diagram illustrating the entire configuration of an ultrasonic cleaning apparatus for a substrate end face according to the present invention. FIG. 5 is a perspective view showing a transfer robot provided in the ultrasonic cleaning apparatus for a substrate end surface according to the present invention.

In the following description, an ultrasonic cleaning apparatus for a substrate end surface (including an ultrasonic excitation device for a substrate end surface) of the present invention will be described.
An example in which is applied to cleaning of a semiconductor wafer as a substrate will be described.

As shown in FIG. 3, a semiconductor wafer 10 as a substrate has an end 10f having a curved surface having a predetermined curvature, and extends from a front surface 10b and a back surface 10c, which are main surfaces, toward the end 10f. Each tapered surface 10d inclined
And a tapered surface 10e. In the following description, the end face of the semiconductor wafer 10 is the tapered face 1
0d and a portion including the tapered surface 10e and the end 10f. The tapered surface 10d and the tapered surface 10
e and the end 10f, that is, the recess 10 which is a mark for positioning the semiconductor wafer 10 in a part of the end face.
a (see FIGS. 1 and 6), a so-called V notch is formed.

As shown in FIGS. 1 and 4, the ultrasonic cleaning device 20 for the substrate end surface includes the ultrasonic excitation device 1 for the substrate end surface,
A liquid supply device 11 as a liquid supply unit for supplying a cleaning fluid 12 such as pure water to the front surface 10b and the rear surface 10c of the semiconductor wafer 10 as a substrate to be cleaned.
(Shown in FIG. 4), and a driving roller 6 as a driving unit for holding and rotating the semiconductor wafer 10,
Moving roller 7 and moving roller 8 and the semiconductor wafer 1
The transport robot 15 (FIG. 5)
, Etc.).

The ultrasonic cleaning apparatus 20 for the end face of the substrate includes the front surface 10 b and the rear surface 10 b of the semiconductor wafer 10.
c can be easily added to a conventional substrate cleaning apparatus for cleaning c.
Of the cleaning device for cleaning the front surface 10b and the back surface 10c. 1 and 4
In FIG. 1, a configuration for cleaning the front surface 10b and the back surface 10c of the semiconductor wafer 10 is omitted. As a configuration for cleaning the front surface 10b and the rear surface 10c of the semiconductor wafer 10, for example, the rotating brush 102 and the rotating brush 103 provided in the conventional substrate cleaning apparatus shown in FIGS. Can be.

First, a description will be given of the substrate end surface ultrasonic excitation device 1 provided in the substrate end surface ultrasonic cleaning device 20 of the present invention.

As shown in FIGS. 2A to 2C, the ultrasonic excitation device 1 for a substrate end surface is formed in an approximately cubic ultrasonic tank 2 and a rectangular plate shape, and the ultrasonic excitation device 1 is provided on one side. A vibrator 4 bonded to the outer bottom surface of the ultrasonic tank 2 with an adhesive or the like, an oscillator (not shown) for applying a voltage of a predetermined driving frequency to the vibrator 4, and a vibrator 4 And a case 5.

The vibrator 4 is a PZT (piezoel)
(electric: piezoelectric) element has electrode plates adhered to both sides. The length and width of the vibrator 4 are as follows:
The length L and the width W of the ultrasonic tank 2 are set to be substantially equal to each other, and in this case, the shape is a substantially square plate having a side of about 30 mm.

At a predetermined position of the electrode plate of the vibrator 4, a pair of power transmission wires for applying a voltage of a predetermined driving frequency from an oscillator (not shown) is connected. When a voltage of a predetermined driving frequency is applied by a not-shown, an ultrasonic vibration of this frequency is generated. The driving frequency is set to an extremely high value of 200 kHz or more, so-called high megasonic, and is 1 MHz in the present embodiment.

The ultrasonic tank 2 resonates with the ultrasonic vibration generated by the vibrator 4 and the liquid supply device 1
1 functions as a member that stores therein a cleaning fluid 12 such as pure water to be supplied to the front surface 10b and the back surface 10c of the semiconductor wafer 10 and excites by the ultrasonic vibration.

The ultrasonic tank 2 is formed in a hollow box shape using duralumin, stainless steel (SUS), quartz, or the like as a material, and is formed in a height direction, that is, an ultrasonic wave generated from the vibrator 4. At a substantially central portion in the traveling direction of the vibration, there is a cutout recess 2a formed perpendicular to the traveling direction. Accordingly, the ultrasonic tank 2 is in an open state at the cutout recess 2a.

The notch recess 2 a is a portion where the end face and the vicinity of the end face of the semiconductor wafer 10 as a substrate are loosely inserted, and is provided at the upper end in the traveling direction of the ultrasonic vibration generated from the vibrator 4. It has a reflector 2b for reflecting the traveling wave of the ultrasonic vibration. The reflection plate 2b is provided perpendicular to the traveling direction of the ultrasonic vibration. The reflection plate 2b is bent in an L-shape from the outer side wall of the ultrasonic tank 2 toward the inside thereof, and It is formed integrally.

The depth d of the notch recess 2a is formed to have a size corresponding to the end face of the substrate to be cleaned. In this embodiment, the depth d corresponds to the size of the end face of the semiconductor substrate 10. For example, it is set to 5 mm. The height e of the notch recess 2a in the traveling direction of the ultrasonic vibration generated from the vibrator 4 has a size corresponding to the thickness f (shown in FIG. 3) of the semiconductor wafer 10 as a substrate. In the state where the end surface and the vicinity of the end surface of the semiconductor wafer 10 are loosely inserted, the surface 10
b and the reflecting plate 2 which is the upper end of the notch 2a.
b (gap shown in FIG. 7) and between the back surface 10c and the lower end 2d of the cutout recess 2a (gap h: shown in FIG. 7). Have been. In this embodiment, the height e of the cutout recess 2a is 3 mm.

The ultrasonic tank 2 is provided with a drain duct 2c on the side opposite to the side having the cutout recess 2a.
It has. The drain duct 2c is provided with the semiconductor wafer 10 as a substrate that is loosely inserted into the notch 2a.
Is provided above the surface 10b.
The height e of the notch 2a is between the surface 10b of the semiconductor wafer 10 and the reflector 2b which is the upper end of the notch 2a (gap g: shown in FIG. 7).
And the lower surface 2 of the back surface 10c and the cutout recess 2a.
d (gap h: shown in FIG. 7), each having an extremely small dimension of about 1 mm, so that the end face of the semiconductor wafer 10 is loosely inserted with pure water or the like in a state where it is loosely inserted. When the cleaning fluid 12 is supplied at a predetermined pressure, the notch recess 2a is closed, and the cleaning fluid 12 is stored in the ultrasonic tank 2 and discharged from the drainage duct 2c. .

The height of the ultrasonic tank 2 from the surface having the vibrator 4 which is the lower surface to the upper surface, that is, the dimension in the traveling direction of the ultrasonic vibration generated from the vibrator 4 is: The resonance length is set to approximately an integral multiple of a half wavelength (λ / 2) of the ultrasonic vibration calculated based on the sound velocity of the material of the ultrasonic tank 2, and ideally to be exactly an integral multiple.

For example, when the ultrasonic tank 2 is made of stainless steel, the half-wavelength (λ /
2) is calculated as follows. λ / 2 = C / 2f, where λ: 1 wavelength C: sound velocity of stainless steel = 5.0 × 10 ⁵ cm / s f: frequency = 10 ⁶ Hz Therefore, λ / 2 = 2.5 mm.

In this embodiment, the height H of the ultrasonic tank 2 is set to 30 mm. That is, it is set to 12 times the half wavelength λ / 2 (about 2.5 mm).

Various materials can be used as the material of the ultrasonic tank 2 in accordance with the cleaning fluid to be used. If it is desired to increase the corrosion resistance of the ultrasonic tank 2, for example, tantalum is used. , Titanium, sapphire, ceramic and the like can be used.

The vibrator 4 of the ultrasonic tank 2
In the present embodiment, the dimension in the direction perpendicular to the direction of travel of the ultrasonic vibration generated from (the direction of the height H), that is, the length L and the width W are set to 30 mm, respectively. The ultrasonic tank 2 has a cubic shape with a side of 30 mm. Therefore, also for the length L and the width W of the ultrasonic tank 2, the half wavelength λ
/ 2 (approximately 2.5 mm), which is the resonance length, but the length L and the width W are variable according to the size of the object to be cleaned.

Next, the driving roller 6 as a driving means included in the ultrasonic cleaning apparatus 20 for the substrate end face of the present invention,
The moving roller 7 and the moving roller 8 will be described.

As shown in FIG. 1, the driving roller 6
It is rotatably fixed at a predetermined position, and is rotated by, for example, a driving force applying means (not shown) such as a motor in the direction of arrow A (or the opposite direction).

The drive roller 6 includes a roller member 6a,
A step portion 6b projecting vertically from the roller member 6a, and is fitted to a shaft member 6c connected to the driving means (not shown).

The moving roller 7 and the moving roller 8 can be entirely moved in the directions of arrows B and C by a moving mechanism (not shown). When the semiconductor wafer 10 is loaded and unloaded, it moves in the direction of arrow B and retracts. When the semiconductor wafer 10 is loaded and positioned by the transfer robot 15, it moves in the direction of arrow C to hold the semiconductor wafer 10. I do. The moving roller 7 and the moving roller 8 are rotatable about the shaft member 7c and the shaft member 8c, respectively, in the direction of arrow A and in the opposite direction.

The moving roller 7 and the moving roller 8
Are respectively a roller member 7a and a roller member 8a,
It has a stepped portion 7b and a stepped portion 8b which project vertically from the roller member 7a and the roller member 8a, respectively, and are fitted to the shaft member 7c and the shaft member 8c, respectively.

Next, the liquid supply device 11 as a liquid supply means provided in the ultrasonic cleaning apparatus 20 for a substrate end surface according to the present invention will be described.

As shown in FIG. 4, the liquid supply device 11 as a liquid supply means for the cleaning fluid 12 is used for cleaning the pure water or the like toward the front surface 10b of the semiconductor wafer 10 as an object to be cleaned. A liquid supply member 11a for supplying a working fluid 15,
A liquid supply member 11b for supplying the cleaning fluid 12 toward the back surface 10c of the semiconductor wafer 10, the cleaning fluid 12 and the ultrasonic tank discharged from the drainage duct 2c of the ultrasonic tank 2 A recovery mechanism (not shown) for collecting the cleaning fluid 12 flowing out without flowing into the inside 2
And a filter 11c for cleaning the cleaning fluid 12 sucked by the action of the pump 11d.

Therefore, in the present embodiment, the cleaning fluid 12 used for cleaning the semiconductor wafer 10 is suctioned by the action of the pump 11d to be cleaned by the filter 11d, and the liquid supply member 11a and the liquid supply member 11a are cleaned. It is configured to return to the liquid member 11b. That is, it is possible to greatly reduce the amount of the cleaning fluid 12 used. Although the effect of suppressing the amount of the cleaning fluid 12 used is reduced, the cleaning fluid 12 used for cleaning the semiconductor wafer 10 may be directly discarded.

Further, the drive roller 6 as a drive means provided in the substrate end face ultrasonic cleaning apparatus 20 of the present invention,
Regarding the moving roller 7 and the moving roller 8, and the liquid supply member 11a and the liquid supply member 11b, the front surface 10b and the rear surface 10c of the semiconductor wafer 10
Can also be used as the configuration of the cleaning device for cleaning the substrate. That is, in the present embodiment, the liquid supply member 11a and the liquid supply member 11b are provided toward the front surface 10b and the back surface 10c of the semiconductor wafer 10, respectively. Rotating brush 1
02 and the rotating brush 103, the cleaning fluid 12 is used for cleaning the front surface 10b and the rear surface 10c, and the cleaning fluid 12 flowing into the ultrasonic tank 2 is supplied to the semiconductor wafer. 10 can be used for cleaning the end face.

Therefore, the ultrasonic cleaning apparatus 20 for an end face of a substrate of the present invention
It can be easily added to a conventional substrate cleaning apparatus for cleaning the back surface 10c, and it is necessary to separately provide a means for supplying a cleaning fluid toward the end surface of the semiconductor wafer 10. Because of the absence, it is possible to achieve downsizing and cost reduction, and to significantly reduce the consumption of the cleaning fluid. Although the effect described above is reduced, the liquid supply member 11a and the liquid supply member 11b are provided toward the end face of the semiconductor wafer 10, and the cleaning fluid 12 is used only for cleaning the end face. You may.

Next, the transfer robot 15 provided in the ultrasonic cleaning apparatus 20 for a substrate end surface according to the present invention will be described.

As shown in FIG. 5, the transfer robot 15 as a means for transferring the object to be cleaned includes a base 15a and a shaft 15b provided in the base 15a so as to be extendable and contractible in the Z direction and rotatable. A first arm 15c having a base end rotatably mounted on an upper portion of the shaft 15b, a second arm 15d having a base end rotatably mounted on a distal end of the first arm 15c, The substrate mounting portion 15e has a base end rotatably attached to a distal end of the second arm 15d. Therefore, the transfer robot 15
When the arm 15c and the second arm 15d expand and contract, the substrate mounting portion 15e can be inserted and removed.

Next, the operation of the ultrasonic cleaning apparatus 20 for a substrate end face according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 6 is a plan view showing an operation when a semiconductor wafer to be cleaned is carried into the substrate edge ultrasonic cleaning apparatus of the present invention, and FIG. 7 is a substrate edge ultrasonic excitation apparatus of the present invention. It is a side view including a partial cross section showing the operation of FIG.

First, the transfer robot 15 performs an operation of loading and positioning the semiconductor wafer 10 as a substrate to be cleaned.

As shown in FIG. 6, the transfer robot 15
When the semiconductor wafer 10 supplied from the previous stage is positioned on the substrate mounting portion 15e and held by suction, the shaft 15b is rotated to move the tip of the substrate mounting portion 15e toward the ultrasonic tank 2 side. Turn. Then, the shaft 15b is extended or contracted to position the semiconductor wafer 10 held on the substrate mounting portion 15e at a height at which the semiconductor wafer 10 can be loosely inserted into the cutout recess 2a of the ultrasonic tank 2. At this time, the moving roller 7 and the moving roller 8 have moved in the direction of arrow B (shown in FIG. 1) and have been retracted to the position shown by the two-dot chain line in FIG.

Next, the first arm 15c, the second arm 15d and the substrate mounting portion 15e are rotated synchronously to extend from the folded state, and the substrate mounting portion 15e is directed toward the ultrasonic tank 2. The semiconductor wafer 1
No. 0, the end face and the vicinity of the end face are loosely inserted into the cutout recesses 2a. In this state, the moving roller 7 and the moving roller 8 are moved in the direction of arrow C (shown in FIG. 1) to set the semiconductor wafer 10 in a state in which the semiconductor wafer 10 can be engaged with the step portions 7b and 8b.

Next, the shaft 15b is contracted in the Z direction to lower the substrate mounting portion 15e, and the semiconductor wafer 1
0 is the step 6b of the driving roller 6, the step 7b of the moving roller 7, and the step 8b of the moving roller 8.
And the substrate mounting portion 15e
Then, the suction holding between the semiconductor wafer 10 and the semiconductor wafer 10 is released. In this state, the first arm 15c, the second arm 15d, and the substrate mounting portion 15e are synchronously rotated in a direction opposite to the above-described rotation direction, and are retracted from the ultrasonic tank 2 side.

Then, the moving roller 7 and the moving roller 8 are slightly moved in the direction of arrow C (shown in FIG. 1) to move the end 10f of the semiconductor wafer 10 to the driving roller 6
The semiconductor wafer 10 is held at a predetermined position by engaging with the roller member 6a, the roller member 7a of the moving roller 7, and the roller member 8a of the moving roller 8, respectively. That is, in this state, the semiconductor wafer 1
0 (the gap g: shown in FIG. 7) and between the back surface 10c and the lower end 2d of the notch recess 2a (the gap g: shown in FIG. 7). Gap h: shown in FIG. 7) has a gap of about 1 mm.

When the semiconductor wafer 10 as a substrate to be cleaned is loaded and positioned, as shown in FIG. 4, the liquid supply device 11 is operated, and the liquid supply member 11 is operated.
The cleaning fluid 12 is supplied from the liquid supply member 11b to the front surface 10b and the rear surface 10c of the semiconductor wafer 10, respectively, and the driving roller 6 is driven by driving force applying means (not shown). , For example, in the direction of arrow A (or the opposite direction) (shown in FIG. 1). Therefore, the roller members 6a to 8
The semiconductor wafer 10 engaged with a is rotationally driven in the direction of the arrow X (or the opposite direction) (shown in FIG. 1).

At this time, for example, if the structure of the rotating brush 102 and the rotating brush 103 shown in FIGS. 12 and 13 is provided, the cleaning fluid 12 firstly becomes the front surface 10 b and the back surface of the semiconductor wafer 10. Acts as a cleaning fluid for cleaning 10c. Then, the cleaning fluid 12 flows along the front surface 10b and the back surface 10c, and flows into the ultrasonic tank 2 from the notch recess 2a.

The height e of the cutout recess 2a formed in the ultrasonic tank 2 is determined by the gap (gap) between the surface 10b of the semiconductor wafer 10 and the reflector 2b (shown in FIG. 7). And the back surface 10c and the notch recess 2a
Since the gap between the lower end 2d and the gap (h) (shown in FIG. 7) is set to about 1 mm, the dimensions are extremely small.
When the cleaning fluid 12 is supplied at a predetermined pressure in a state where the end surface and the vicinity of the end surface of the semiconductor wafer 10 are loosely inserted, the notch recess 2a is closed, and the cleaning fluid 12 is While being stored in the tank 2, it is discharged from the drainage duct 2c. At this time, a front surface is provided between the front surface 10b of the semiconductor wafer 10 and the reflection plate 2b (gap g) and between the back surface 10c and the lower end 2d of the notch recess 2a (gap h). A liquid film of the cleaning fluid 12 is formed by the action of the tension.

In this state, when a voltage of a predetermined drive frequency is applied to the vibrator 4 from the oscillator (not shown) of the ultrasonic excitation device 1 for the substrate end surface, the vibrator 4 is excited, An ultrasonic vibration of this frequency is generated. And
As shown in FIG. 7, the generated ultrasonic vibration is transmitted to the cleaning fluid 12 stored in the ultrasonic tank 2 via the ultrasonic tank 2 and the semiconductor wafer 10. The surface 10b and the reflector 2b
Is transmitted to the end face and the vicinity of the end face of the semiconductor wafer 10 via the liquid film formed in the gap g between the lower surface 10c and the lower end 2d. Thus, the end face and the vicinity of the end face of the semiconductor wafer 10 are cleaned.

At this time, the ultrasonic vibration generated by the vibrator 4 is transmitted in the direction of the arrow shown in FIG. 7, that is, in the vertical direction from the vibrator 4, and the semiconductor wafer 10 as a substrate to be cleaned is transmitted. Since the end face and the vicinity of the end face are uniformly irradiated, the effect of cleaning the recess 10a formed in the semiconductor wafer 10, that is, the end face including the so-called V notch and the vicinity of the end face is high.

The ultrasonic tank 2 is provided with a reflection plate 2b provided vertically above the notch recess 2a in the traveling direction of the ultrasonic vibration generated from the vibrator 4 with respect to the traveling direction. Therefore, the ultrasonic vibration transmitted through the cutout recess 2a is reflected by the reflector 2b, and the end face of the semiconductor wafer 10 loosely inserted into the cutout recess 2a and Heading back to the end face.

That is, the ultrasonic vibration from the vibrator 4 is reflected by the reflection plate 2b, so that the ultrasonic vibration is concentrated on the end face and the vicinity of the end face of the semiconductor wafer 10 from a short distance. It is possible to obtain a high cleaning effect.

Further, the ultrasonic cleaning apparatus 20 for the substrate end face of the present invention is configured to perform non-contact cleaning in a state where the end face and the vicinity of the end face of the semiconductor wafer 10 are loosely inserted into the cutout recesses 2a. Therefore, the semiconductor wafer 1 as a substrate to be cleaned does not cause re-adhesion of contaminants.
0 can be maintained with high cleanliness.

When the cleaning of the semiconductor wafer 10 as a substrate to be cleaned is completed, the transfer robot 15 as a transfer means operates to carry out the semiconductor wafer 10 and deliver it to the next step. This operation is the reverse of the operation when the semiconductor wafer 10 is loaded, and the basic operation is the same.

Next, an ultrasonic cleaning apparatus for a substrate end surface (including an ultrasonic excitation device for a substrate end surface) according to a second embodiment of the present invention will be described with reference to FIGS. However, the ultrasonic cleaning apparatus for the substrate end surface as the second embodiment of the present invention is different from the first embodiment only in the configuration of the ultrasonic excitation device for the substrate end surface, and therefore has the same structure as the first embodiment. Descriptions of parts having functions and functions will be omitted, and only different points will be described.

FIG. 8 is a perspective view showing a substrate end face ultrasonic excitation device provided in a substrate end face ultrasonic cleaning apparatus according to a second embodiment of the present invention. 9 is a side view including a partial cross section of the substrate end surface ultrasonic excitation device shown in FIG.
FIG. 10 is a partially enlarged cross-sectional view showing an end surface cleaning member provided in the substrate end surface ultrasonic excitation device shown in FIG.

As shown in FIGS. 8 and 9, the second embodiment of the present invention
A substrate end surface ultrasonic excitation device 31 provided in the substrate end surface ultrasonic cleaning device as an embodiment includes a substantially cylindrical horn 32.
A vibrator 34 formed in a circular plate shape and bonded to the bottom surface of the horn 32 on one side with an adhesive or the like;
An end face cleaning member 33 attached to a surface of the horn 32 opposite to the surface having the vibrator 34, and a cooling pipe 39 wound around the body of the horn 32, wherein the cooling pipe 39 has a cooling fluid. (Not shown) for supplying a cooling liquid, an oscillator (not shown) for applying a voltage of a predetermined driving frequency to the vibrator 34, and a case surrounding the entire horn 32 including the vibrator 34. 35 (shown in FIG. 9)
And

The vibrator 34 is a PZT (piezoe)
In this configuration, electrode plates are adhered to both surfaces of a (electric: piezoelectric) element. The vibrator 34 has a circular plate shape having a diameter of about 20 mm, and is set to be substantially equal to the diameter of the bottom surface of the horn 32.

At a predetermined position of the electrode plate of the vibrator 34, a pair of power transmission wires for applying a voltage of a predetermined driving frequency from an oscillator (not shown) is connected. When a voltage of a predetermined driving frequency is applied by a not-shown, an ultrasonic vibration of this frequency is generated. The driving frequency is set to an extremely high value of 200 kHz or more, so-called high mega, and in this embodiment, it is 1 MHz.

The horn 32 resonates with the ultrasonic vibration generated by the vibrator 34 and functions as a member that amplifies and transmits the ultrasonic vibration.

The horn 32 is made of a material such as duralumin, stainless steel (SUS) or aluminum, and is formed in a substantially columnar solid shape. As shown in FIG. 9, the horn 32 has a bottom surface having the vibrator 34. , That is, a conical tapered surface 32 whose upper surface protrudes toward the center.
a. In this embodiment, the inclination angle θ of the conical tapered surface 32a with respect to the surface having the vibrator 34, that is, the bottom surface is set to 2 °.

Further, there is provided a mounting projection 32b for mounting the end face cleaning member 33 at the center of the conical tapered surface 32a, that is, at the top of the conical tapered surface 32a.

As shown also in FIG. 10, the end face cleaning member 33 resonates with the ultrasonic vibration transmitted by the horn 32, and the liquid supply device 11 (see FIG. 4) causes the surface of the semiconductor wafer 10 to be moved. A member that transmits and excites the ultrasonic vibration to the cleaning fluid 12 such as pure water supplied to the back surface 10c and the back surface 10c. The end face cleaning member 33
Is formed of a material such as duralumin, stainless steel (SUS), or quartz, and has a disk shape having a diameter larger than that of the horn 32. The mounting projection of the horn 32 is provided at a central portion on the lower surface side. 32b.

The end surface cleaning member 33 has a rectangular parallelepiped first cleaning projection 33a and a second cleaning projection 3 on the upper surface side.
3b. The first cleaning projection 33a and the second
The cleaning projections 33b have the same shape as each other, are formed in parallel with each other across a predetermined space e (shown in FIG. 9), and are formed integrally with the end face cleaning member 33.

The space e is a portion where the end face and the vicinity of the end face of the semiconductor wafer 10 as a substrate are loosely inserted, and acts as an end face cleaning section 33c. The space e of the end face cleaning section 33c is formed to have a size corresponding to the thickness f of the semiconductor wafer 10 as a substrate (shown in FIG. 3), and the end face and the vicinity of the end face of the semiconductor wafer 10 are loosely inserted. In this state, the space between the front surface 10b and the second cleaning projection 33b (gap g: shown in FIG. 10) and the space between the back surface 10c and the first cleaning projection 33a (gap h: FIG. 10 (shown in FIG. 10). In this embodiment, the space e of the end face cleaning section 33c is 3 mm.

The height d of the first cleaning projection 33a and the second cleaning projection 33b (shown in FIGS. 9 and 10), that is, the depth of the edge cleaning section 33c is the object to be cleaned. It is formed in a size corresponding to the end face of the substrate. In the present embodiment, it is set to, for example, 5 mm in accordance with the size of the end face of the semiconductor substrate 10. In addition, the first
The length L of the cleaning projection 33a and the second cleaning projection 33b in the longitudinal direction (shown in FIG. 8), that is, in the direction along the front surface 10b and the back surface 10c of the semiconductor wafer 10 to be cleaned. The width of the end face cleaning section 33c is set to 18 mm in this embodiment.

The end surface cleaning member 33 includes a flange 33
d, and a case 3 described later on the inner peripheral portion of the collar portion 33d.
5 for attaching the screw 5 to keep the inside liquid-tight
3e is formed.

Various materials can be used as the material of the end surface cleaning member 33 in accordance with the cleaning fluid to be used. In order to increase the corrosion resistance of the end surface cleaning member 33, for example, tantalum is used. , Titanium, sapphire,
Ceramic or the like can be used.

The height H (shown in FIG. 9) from the lower surface of the horn 32 having the vibrator 34 to the tip of the mounting projection 32b, that is, the vibrator 3
The dimension in the traveling direction of the ultrasonic vibration generated from 4 is
The resonance length is set to substantially an integral multiple of a half wavelength (λ / 2) of the ultrasonic vibration calculated based on the sound velocity of the material of the horn 32, and ideally to be exactly an integral multiple.

In this embodiment, the horn 32 is made of stainless steel (SUS) and the height H is 15
mm. That is, similarly to the above-described ultrasonic excitation device 1 for the substrate end face as the first embodiment, the wavelength is set to six times the half wavelength λ / 2 (about 2.5 mm) of the ultrasonic vibration.

The cooling pipe 39 is made of stainless steel or copper, and is wound around the body of the horn 32. A cooling liquid supply means (not shown) including the cooling pipe 39 cools the horn 32 and prevents the vibrator 34 itself from being adversely affected by heat generated by the ultrasonic vibration generated from the vibrator 34. For example, a cooling fluid such as pure water or city water is supplied to the cooling pipe 39 from the direction of arrow D shown in FIGS. 8 and 9 and discharged in the direction of arrow E.

As shown in FIG. 9, the case 35 is a member that surrounds the entire horn 32 including the vibrator 34 and maintains the horn 32 in a liquid-tight manner.
It is formed from K (Polyetheretherketone) (polyetheretherketone) resin. The case 35 has a substantially cylindrical shape with an open top,
A threaded portion 35a is formed on the outer periphery of the upper end open portion, and a tube member 40 that guides the cooling pipe 39 through the cooling pipe 39 to the outside is screwed to the bottom surface.

The screw portion 35 of the case 35
a is screwed into the thread portion 33e of the end surface cleaning member 33 with a packing 46 interposed therebetween.
The entire horn 32 including the horn 4 can be kept liquid-tight. The packing 46 functions as a liquid-tight and vibration-absorbing member.

Next, the operation of the ultrasonic cleaning apparatus for a substrate end face according to a second embodiment of the present invention will be described. Since the basic operation is the same as that of the ultrasonic cleaning apparatus 20 for the substrate end surface of the first embodiment, the following description will focus on the differences from the first embodiment.

First, similarly to the ultrasonic cleaning apparatus 20 for the substrate end face as the first embodiment, the transfer robot 15
(See FIGS. 5 and 6), the semiconductor wafer 10 as a substrate to be cleaned is placed between the front surface 10b and the second cleaning projection 33b (gap g: shown in FIG. 10).
And it is positioned and fixed to have a gap of about 1 mm between the back surface 10c and the first cleaning projection 33a (gap h: shown in FIG. 10).

Next, the liquid supply device 11 (see FIG. 4) is operated to supply the cleaning fluid 12 to the front surface 10b and the rear surface 10c of the semiconductor wafer 10, and to serve as driving means. The drive roller 6 (see FIGS. 1 and 6) rotates the semiconductor wafer 10 in, for example, the direction of the arrow X (or the opposite direction) (shown in FIG. 1).

The cleaning fluid 12 flows along the front surface 10 b and the back surface 10 c of the semiconductor wafer 10 and flows into the edge cleaning section 33 c of the edge cleaning member 33. At this time, the surface 1 of the semiconductor wafer 10 is
0b and the second cleaning projection 33b (gap g: FIG. 1).
0), the back surface 10c and the first cleaning projection 3
A liquid film of the cleaning fluid 12 is formed between the cleaning fluid 3 and the gap 3a (gap h: shown in FIG. 10) by the action of surface tension.

In this state, when a voltage of a predetermined drive frequency is applied to the vibrator 34 from the oscillator (not shown) of the ultrasonic excitation device 31 for the substrate end surface, the vibrator 34
Are excited to generate ultrasonic vibration of this frequency. The ultrasonic vibration is applied to the gap g between the front surface 10b and the second cleaning protrusion 33b and the rear surface 10c and the first cleaning protrusion 33 from the horn 32 and the end face cleaning member 33.
The liquid is transmitted to the end face and the vicinity of the end face of the semiconductor wafer 10 through the liquid film of the cleaning fluid 12 formed in the gap h with respect to the end face a. As a result, cleaning of the end face including the concave portion 10a formed in the semiconductor wafer 10, that is, the end face including the so-called V notch and the vicinity of the end face is performed in a non-contact manner.

At this time, the ultrasonic vibration generated from the vibrator 34 is transmitted from the vibrator 34 in a vertical direction, that is, toward the conical tapered surface 32a which is the upper surface. Since the conical tapered surface 32a has a shape protruding toward the center thereof, the ultrasonic vibration converges toward the top of the conical tapered surface 32a, that is, toward the mounting protrusion 32a, and is amplified. Is done.

Therefore, the end face cleaning member 33 attached to the attachment projection 32a excites the cleaning fluid 12 by the converged ultrasonic vibration, and removes the cleaning fluid 12 from the end face and the vicinity of the end face of the semiconductor wafer 10. It is possible to irradiate light from a very short distance. That is, a high cleaning effect can be obtained.

Next, an ultrasonic cleaning apparatus for a substrate end face (including an ultrasonic excitation device for a substrate end face) as a third embodiment of the present invention will be described with reference to FIG. However, the ultrasonic cleaning apparatus for a substrate end face as the third embodiment of the present invention has the same structure and function as the second embodiment, because only the configuration of the end face cleaning member is different from that of the second embodiment. The description of the portions will be omitted, and only different points will be described.

FIG. 11 is a partially enlarged sectional view showing an edge cleaning member of a substrate edge ultrasonic vibration device provided in a substrate edge ultrasonic cleaning device according to a third embodiment of the present invention.

As shown in FIG. 11, the end face cleaning member 53 is provided.
The only difference is the shape of the end cleaning member 33 and the first cleaning projection 33a and the second cleaning projection 33b provided in the substrate end surface ultrasonic excitation device 31 as the second embodiment, The other configuration is the same. The end surface cleaning member 53 is particularly effective, for example, when the supply amount of the cleaning fluid 12 supplied from the liquid supply members 11a and 11b (see FIG. 4) is large.

The end surface cleaning member 53 has a first cleaning projection 53a and a second cleaning projection 53b having a trapezoidal cross section in the traveling direction of the ultrasonic vibration generated from the vibrator 34 on the upper surface side. are doing. The first cleaning projection 53a and the second cleaning projection 53b have the same shape and are parallel to each other with a space e therebetween, and the tapered surface 53f and the tapered surface 53g are opposed to each other. It is formed integrally with the cleaning member 33.

Further, the first cleaning projection 53a and the second
Cleaning part 53c formed between the cleaning projection 53b and the end surface 53c
Has a shape in which the space e is gradually widened upward and opened. With this shape, the liquid supply member 11
a and the cleaning fluid 1 supplied from the liquid supply member 11b
Even if the supply amount of the cleaning liquid 12 is large, the cleaning fluid 12 can surely flow into the edge cleaning section 53c of the edge cleaning member 53, and the cleaning fluid 12 of the semiconductor wafer 10 loosely inserted into the edge cleaning section 53c can be used. A liquid film of the cleaning fluid 12 is formed between the front surface 10b and the second cleaning protrusion 53b and between the back surface 10c and the first cleaning protrusion 53a by the action of surface tension.

The gap between the tip of the second cleaning projection 53b and the front surface 10b (gap i) and the gap between the tip of the first cleaning projection 53a and the back surface 10c (gap j).
Is set to about 1 mm to 5 mm, between the front surface 10b of the semiconductor wafer 10 and the second cleaning projection 53b and between the rear surface 10c and the first cleaning projection 53a. The cleaning fluid 1 by the action of surface tension
2, it is preferable to set the inclination angles of the tapered surfaces 53g and 53f so that the gap i and the gap j are in this range.
The shape of the first cleaning projection 53a and the second cleaning projection 53b, the size of the space e, and the like are determined according to the shape of the substrate to be cleaned and the supply amount of the cleaning fluid 12. Can be appropriately changed.

Further, the space e of the end face cleaning section 53c is formed.
Similarly to the end face cleaning member 33 provided in the second embodiment, when the end face and the vicinity of the end face of the semiconductor wafer 10 are loosely inserted between the front face 10b and the second cleaning projection 53b. And a dimension having a gap of about 1 mm between the back surface 10c and the first cleaning protrusion 53a, and in this embodiment, 3 mm
It has become. Also, the height d of the first cleaning projection 53a and the second cleaning projection 53b, that is, the depth of the edge cleaning section 53c is the same as the edge cleaning member 33 provided in the second embodiment. In the present embodiment, the size is set to, for example, 5 mm in accordance with the size of the end face of the semiconductor substrate 10 as the substrate to be cleaned.

The end surface cleaning member 53 having the above configuration
The ultrasonic excitation device for the substrate end face provided with the above and the ultrasonic cleaning device for the substrate end face provided with the same can also obtain the same operation and effect as the first and second embodiments, and the ultrasonic vibration can be obtained. Since the end face and the vicinity of the end face of the semiconductor wafer 10 can be concentratedly irradiated from a short distance and cleaned in a non-contact manner, the cleaning effect is high.

In each of the embodiments, pure water is used as the cleaning fluid. However, various cleaning fluids can be used according to the purpose of cleaning and the material of the object to be cleaned.

Further, in each of the embodiments, an example in which the ultrasonic cleaning apparatus for the substrate end surface (including the ultrasonic excitation device for the substrate end surface) of the present invention is applied to the cleaning of a semiconductor wafer as a substrate has been described. The substrate as the object to be cleaned is transported in a horizontal direction by a transport roller or the like, and the end face of the substrate is cut into the notch recess 2a (or the end face cleaning section 3).
3, or a configuration that allows passage through the end face cleaning unit 55) can be applied to cleaning of a rectangular plate-shaped substrate such as a liquid crystal glass substrate.

[0114]

As described above, according to the ultrasonic excitation device for the substrate end face and the ultrasonic cleaning apparatus for the substrate end face provided with the same according to the present invention, the end face of the object to be cleaned is cleaned without contact. It is possible to maintain the degree of cleanliness, avoid complication of the apparatus, increase the size and increase the cost, and achieve the saving of the cleaning liquid.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an ultrasonic cleaning apparatus for a substrate end face as a first embodiment of the present invention.

FIGS. 2A and 2B are diagrams showing an ultrasonic excitation device for a substrate end surface provided in the ultrasonic cleaning device for an end surface of a substrate shown in FIG. 1, wherein FIG. 2A is a plan view, FIG. 2B is a left side view, and FIG. It is a front view.

FIG. 3 is an enlarged sectional view of a part of a semiconductor wafer as a substrate to be cleaned.

FIG. 4 is a view including a partial cross section schematically showing the entire configuration of the ultrasonic cleaning apparatus for a substrate end face according to the present invention.

FIG. 5 is a perspective view showing a transfer robot provided in the ultrasonic cleaning apparatus for a substrate end surface according to the present invention.

FIG. 6 is a plan view showing an operation when a semiconductor wafer to be cleaned is carried into the ultrasonic cleaning apparatus for a substrate end face according to the present invention.

FIG. 7 is a side view including a partial cross section showing an operation of the ultrasonic excitation device for a substrate end face of the present invention.

FIG. 8 is a perspective view showing a substrate end face ultrasonic excitation device provided in a substrate end face ultrasonic cleaning apparatus as a second embodiment of the present invention.

9 is a side view including a partial cross section of the ultrasonic excitation device for a substrate end face shown in FIG. 8;

FIG. 10 is a partially enlarged cross-sectional view showing an end surface cleaning member provided in the ultrasonic excitation device for a substrate end surface shown in FIG. 8;

FIG. 11 is a partially enlarged cross-sectional view showing an edge cleaning member provided in a substrate edge ultrasonic excitation device as a third embodiment of the present invention.

FIG. 12 is a perspective view showing a conventional cleaning apparatus for cleaning an end face of a substrate.

FIG. 13 is a sectional view of a conventional cleaning apparatus for cleaning the end face of the substrate shown in FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Ultrasonic excitation device for substrate end surface (first embodiment) 2 Ultrasonic tank 2a Notch concave portion 2b Reflector plate 2c Drainage duct 2d Lower end portion 4 Vibrator 5 Case 6 Drive roller (drive means) 6a Roller member 6b Step portion 6c Shaft member 7, 8 Moving roller (driving means) 7a, 8a Roller member 7b, 8b Step 7c, 8c Shaft member 10 Semiconductor wafer (substrate to be cleaned, substrate) 10a Recess (V notch) 10b Surface (main surface) 10c Back surface (main surface) 10d, 10e Tapered surface 10f End 11 Liquid supply device (liquid supply means) 11a, 11b Liquid supply member 11c Filter 11d Pump 12 Cleaning fluid 15 Transfer robot (transportation means) 15a Base 15b Shaft 15c First 1 arm 15d Second arm 15e Substrate placing section 20 Substrate edge ultrasonic cleaning device (first embodiment) 31 Substrate edge ultrasonic Excitation device (second embodiment) 32 Horn 32a Conical tapered surface 32b Mounting projection 33 End cleaning member 33a (First) cleaning projection 33b (Second) cleaning projection 33c End cleaning section 33d Flange 33e Screw Part 34 vibrator 35 case 35a screw part 39 cooling pipe (coolant supply means) 40 pipe member 46 packing 53 end face cleaning member (third embodiment) 53a (first) cleaning projection 53b (second) cleaning projection Part 53c End face cleaning part 53d Flange part 53e Screw part 53f, 53g Tapered surface

Claims (11)

[Claims] 1. A vibrator that generates ultrasonic vibrations of 200 kHz or more, and an ultrasonic tank formed in a hollow box shape and coupled to the vibrator, wherein the ultrasonic tank is an end face of a substrate. And a notch concave portion into which the vicinity of the end surface is loosely inserted, wherein the cleaning fluid flowing from the notch concave portion is stored inside and excited by the ultrasonic vibration, and is provided. 2. The ultrasonic tank according to claim 1, further comprising: a reflecting plate at an upper end of the notch recess in the traveling direction of the ultrasonic vibration to reflect the ultrasonic vibration toward an end surface of the substrate and a vicinity of the end surface. The ultrasonic excitation device for a substrate end face according to claim 1, wherein: 3. The ultrasonic tank according to claim 1, further comprising a drainage duct provided at a position above a surface of the substrate inserted into the notch recess to discharge the cleaning fluid. The ultrasonic excitation device for a substrate end surface according to claim 1 or 2. 4. A vibrator that generates ultrasonic vibration of 200 kHz or more, a horn to which the vibrator is coupled to transmit the ultrasonic vibration, and a horn attached to a surface of the horn facing the surface having the vibrator. A first cleaning protrusion and a second cleaning protrusion formed in parallel with each other with a predetermined space into which the end surface of the substrate and the vicinity of the end surface are loosely inserted. An ultrasonic excitation device for an end face of a substrate, comprising: a unit, wherein the cleaning fluid flowing into the space is excited by the ultrasonic vibration. 5. The ultrasonic excitation device for a substrate end face according to claim 4, wherein said space gradually widens upward. 6. The horn, wherein a surface facing the surface having the vibrator is a conical tapered surface protruding toward a center portion, and has a mounting projection for attaching the end face cleaning member to the center portion. 6. The method according to claim 4, wherein
An ultrasonic excitation device for a substrate end surface as described in the above. 7. A cooling liquid supply means for cooling the horn by supplying a cooling fluid to the cooling pipe, the cooling pipe including a cooling pipe wound around a body of the horn. The ultrasonic excitation device for a substrate end surface according to claim 6. 8. An ultrasonic cleaning apparatus for an end face of a substrate, comprising: driving means for holding and rotating a substrate; liquid supply means for supplying a cleaning fluid; and an ultrasonic excitation device for exciting the cleaning fluid. The ultrasonic excitation device includes a vibrator that generates ultrasonic vibration of 200 kHz or more, and an ultrasonic tank formed in a hollow box shape and coupled with the vibrator, The tank is provided with a notch concave portion into which the end surface of the substrate and the vicinity of the end surface are loosely inserted, and stores therein a cleaning fluid flowing from the notch concave portion and is excited by the ultrasonic vibration. Ultrasonic cleaning equipment. 9. The liquid film of the cleaning fluid is formed by the action of surface tension between the front surface of the substrate and the upper end of the notch recess and between the rear surface of the substrate and the lower end of the notch recess. The ultrasonic cleaning device for a substrate end surface according to claim 8, wherein the ultrasonic cleaning device is formed. 10. The ultrasonic cleaning apparatus for an end face of a substrate according to claim 8, wherein the liquid supply means supplies the cleaning fluid to the front surface and the rear surface of the substrate, respectively. . 11. An ultrasonic cleaning apparatus for an end face of a substrate, comprising: driving means for holding and rotating a substrate; liquid supply means for supplying a cleaning fluid; and an ultrasonic excitation device for exciting the cleaning fluid. Wherein the ultrasonic excitation device includes: a vibrator that generates ultrasonic vibration of 200 kHz or more; a horn coupled to the vibrator to transmit the ultrasonic vibration; and a surface of the horn having the vibrator. And a first cleaning projection formed in parallel with each other across a predetermined space into which the end surface of the substrate and the vicinity of the end surface are loosely inserted. And a second cleaning projection, wherein the cleaning fluid flowing into the space is excited by the ultrasonic vibration.