JP2001044530A - Formation of pattern of magnetoresistance element and magnetoresistance element using the same - Google Patents
Formation of pattern of magnetoresistance element and magnetoresistance element using the sameInfo
- Publication number
- JP2001044530A JP2001044530A JP11213269A JP21326999A JP2001044530A JP 2001044530 A JP2001044530 A JP 2001044530A JP 11213269 A JP11213269 A JP 11213269A JP 21326999 A JP21326999 A JP 21326999A JP 2001044530 A JP2001044530 A JP 2001044530A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetoresistive
- pattern
- film
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 claims abstract description 108
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 42
- 239000010408 film Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910010272 inorganic material Inorganic materials 0.000 claims description 30
- 239000011147 inorganic material Substances 0.000 claims description 30
- 238000000605 extraction Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 22
- 229910052760 oxygen Inorganic materials 0.000 abstract description 17
- 239000001301 oxygen Substances 0.000 abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 15
- 238000009832 plasma treatment Methods 0.000 abstract description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は磁気抵抗薄膜を用い
た磁気抵抗素子のパターン形成方法およびこの形成方法
を用いた磁気抵抗素子に関するものである。The present invention relates to a method of forming a pattern of a magnetoresistive element using a magnetoresistive thin film and a magnetoresistive element using the method.
【０００２】[0002]
【従来の技術】一般に、磁気抵抗素子は、外部の電子回
路と接続するための外部取り出し用電極を有する絶縁基
板の上面にこの外部取り出し用電極と電気的に接続する
ように磁気抵抗薄膜を着膜し、フォトリソグラフィプロ
セスにより磁気抵抗薄膜のパターン形成を行った後、こ
の磁気抵抗薄膜のパターンの上面を樹脂等からなる保護
膜で覆うことにより製造されている。2. Description of the Related Art In general, a magnetoresistive element is formed by attaching a magnetoresistive thin film on an upper surface of an insulating substrate having an external extraction electrode for connecting to an external electronic circuit so as to be electrically connected to the external extraction electrode. It is manufactured by forming a film, forming a pattern of the magnetoresistive thin film by a photolithography process, and then covering the upper surface of the pattern of the magnetoresistive thin film with a protective film made of resin or the like.
【０００３】以下に従来の磁気抵抗素子およびその磁気
抵抗薄膜を用いたパターンの形成工程について図面を参
照しながら説明する。Hereinafter, a conventional magnetoresistive element and a process of forming a pattern using the magnetoresistive thin film will be described with reference to the drawings.
【０００４】図３は従来の磁気抵抗素子の上面図であ
る。FIG. 3 is a top view of a conventional magnetoresistive element.
【０００５】図３において、１はアルミナまたはガラス
等からなる絶縁基板である。２は上記絶縁基板１の上面
に設けられたＮｉＦｅ、ＮｉＦｅＣｏ等の磁性材料から
なる磁気抵抗薄膜のパターンである。３は上記絶縁基板
１の上下面を電気的に接続するようにこの絶縁基板１の
四隅の上面から下面にかけて設けられたＡｇ−Ｐｄ等の
導電性材料からなる外部取り出し用電極である。この外
部取り出し用電極３は磁気抵抗薄膜のパターン２に生じ
た電気信号を取り出し、この磁気抵抗素子が実装されて
いる基板（図示せず）等に配設された電子回路に伝達す
るものである。In FIG. 3, reference numeral 1 denotes an insulating substrate made of alumina, glass, or the like. Reference numeral 2 denotes a pattern of a magnetoresistive thin film provided on the upper surface of the insulating substrate 1 and made of a magnetic material such as NiFe or NiFeCo. Reference numeral 3 denotes an external extraction electrode made of a conductive material such as Ag-Pd provided from the upper surface to the lower surface of the four corners of the insulating substrate 1 so as to electrically connect the upper and lower surfaces of the insulating substrate 1. The external take-out electrode 3 takes out an electric signal generated in the pattern 2 of the magnetoresistive thin film and transmits it to an electronic circuit provided on a substrate (not shown) on which the magnetoresistive element is mounted. .
【０００６】以上のように構成された従来の磁気抵抗素
子における磁気抵抗薄膜のパターン形成方法について説
明する。A method for forming a pattern of a magnetoresistive thin film in a conventional magnetoresistive element configured as described above will be described.
【０００７】図４（ａ）〜（ｄ）は従来の磁気抵抗薄膜
のパターン形成方法を示す工程図である。FIGS. 4A to 4D are process diagrams showing a conventional method for forming a pattern of a magnetoresistive thin film.
【０００８】まず、図４（ａ）に示すように、絶縁基板
１１の上面全体にＮｉＦｅ、ＮｉＦｅＣｏ等の磁性材料
を蒸着、スパッタリング等の工法で着膜して磁気抵抗薄
膜１２を形成する。First, as shown in FIG. 4A, a magnetic material such as NiFe or NiFeCo is deposited on the entire upper surface of the insulating substrate 11 by a method such as vapor deposition and sputtering to form a magnetoresistive thin film 12.
【０００９】次に、前工程で得られた磁気抵抗薄膜１２
の上面全体にフォトレジストを塗布し、このフォトレジ
ストが所定のパターンとなるように露光・現像などを含
むフォトリソグラフィプロセスにより図４（ｂ）に示す
ように、フォトレジストパターン１３を形成する。Next, the magnetoresistive thin film 12 obtained in the previous step
A photoresist is applied to the entire top surface of the substrate, and a photoresist pattern 13 is formed as shown in FIG. 4B by a photolithography process including exposure and development so that the photoresist has a predetermined pattern.
【００１０】次に、図４（ｃ）に示すように、プラズマ
エッチング法、イオンミリング法等によりフォトレジス
トが形成されていない部分の磁気抵抗薄膜を除去して、
フォトレジストパターン１３と磁気抵抗薄膜１２とから
なるパターン１４を形成する。Next, as shown in FIG. 4C, a portion of the magnetoresistive thin film where no photoresist is formed is removed by a plasma etching method, an ion milling method, or the like.
A pattern 14 including a photoresist pattern 13 and a magnetoresistive thin film 12 is formed.
【００１１】最後に、図４（ｄ）に示すように、フォト
レジストパターン１３を酸素プラズマ処理により除去し
て、磁気抵抗薄膜１２からなる磁気抵抗薄膜のパターン
を形成していた。Finally, as shown in FIG. 4D, the photoresist pattern 13 was removed by oxygen plasma treatment to form a magnetoresistive thin film pattern composed of the magnetoresistive thin film 12.
【００１２】以上のような従来の磁気抵抗素子における
磁気抵抗薄膜のパターン形成方法において、フォトレジ
ストパターンを酸素プラズマ処理で除去する際の原理を
説明する。The principle of removing a photoresist pattern by oxygen plasma processing in the above-described conventional method for forming a pattern of a magnetoresistive thin film in a magnetoresistive element will be described.
【００１３】フォトレジストパターン１３が酸素プラズ
マ中にさらされると、このプラズマ放電による分子解離
の結果、発生する酸素の励起分子、酸素イオンにより、
フォトレジスト１３を構成するフォトレジストが揮発性
化合物に変化して、このフォトレジストがエッチングさ
れる。エッチングが進行して、全てのフォトレジストが
エッチングされた時点でフォトレジストパターン１３の
除去が終了する。When the photoresist pattern 13 is exposed to the oxygen plasma, the dissociation due to the plasma discharge results in the generation of excited oxygen molecules and oxygen ions.
The photoresist constituting the photoresist 13 changes to a volatile compound, and the photoresist is etched. The etching proceeds, and the removal of the photoresist pattern 13 ends when all the photoresist has been etched.
【００１４】また、半導体における薄膜のパターンにお
いては、図５に示すように、薄い金属膜の上面に厚いＳ
ｉＯ2膜を形成するものが知られている。In a semiconductor thin film pattern, as shown in FIG.
A device that forms an iO 2 film is known.
【００１５】図において、２１はシリコンからなる基
板、２２は基板２１の上面を酸化させてできたＳｉＯ2
膜である。２３はＳｉＯ2膜２２の上面に設けられた多
結晶シリコン膜である。２４は多結晶シリコン膜２３の
上面に設けられた金属材料膜である。２５は金属材料膜
２４の上面に設けられたＳｉＯ2膜で、このＳｉＯ2膜２
５は金属材料膜２４よりも厚みを厚くしているものであ
る。In the figure, reference numeral 21 denotes a substrate made of silicon, and 22 denotes SiO 2 formed by oxidizing the upper surface of the substrate 21.
It is a membrane. Reference numeral 23 denotes a polycrystalline silicon film provided on the upper surface of the SiO 2 film 22. Reference numeral 24 denotes a metal material film provided on the upper surface of the polycrystalline silicon film 23. 25 is a SiO 2 film provided on an upper surface of the metal material film 24, the SiO 2 film 2
Numeral 5 is thicker than the metal material film 24.
【００１６】[0016]
【発明が解決しようとする課題】しかしながら上述の従
来の磁気抵抗素子のパターン形成工程では、フォトレジ
ストパターン１３を除去する工程で、酸素プラズマ処理
中にフォトレジストパターン１３が除去された部分は、
磁気抵抗薄膜１２の表面が酸素プラズマ中にさらされ
て、この磁気抵抗薄膜１２の表面が励起された酸素によ
り、強く酸化されることがあった。磁気抵抗薄膜１２の
表面が過度に酸化されると、磁気抵抗材料がやや変質す
るため、磁気抵抗薄膜１２の磁気抵抗効果が変化すると
いう課題があった。However, in the above-described pattern forming step of the conventional magnetoresistive element, in the step of removing the photoresist pattern 13, the portion where the photoresist pattern 13 has been removed during the oxygen plasma processing is:
The surface of the magnetoresistive thin film 12 was exposed to oxygen plasma, and the surface of the magnetoresistive thin film 12 was sometimes strongly oxidized by the excited oxygen. If the surface of the magnetoresistive thin film 12 is excessively oxidized, the magnetoresistive material is slightly changed in quality, and there is a problem that the magnetoresistive effect of the magnetoresistive thin film 12 changes.
【００１７】また、従来の半導体の薄膜のパターンで
は、図５に示すように金属材料膜２４の上に厚くＳｉＯ
2膜２５を着膜しているが、磁気抵抗素子においてはＳ
ｉＯ2を厚く着膜すると、この厚いＳｉＯ2によって受け
る内部応力によって磁気抵抗薄膜の磁気抵抗効果が変化
し、抵抗値変化率が大幅に低下するという課題があっ
た。In a conventional semiconductor thin film pattern, as shown in FIG.
2 film 25 is deposited, but in the magnetoresistive element, S
When iO 2 is deposited thickly, there is a problem that the magnetoresistive effect of the magnetoresistive thin film changes due to internal stress received by the thick SiO 2 , and the rate of change in resistance value is greatly reduced.
【００１８】本発明は上記従来の課題を解決するもの
で、磁気抵抗効果をほとんど変化させることなく、フォ
トレジストパターンを除去できる磁気抵抗素子のパター
ン形成方法を提供すると同時に、磁気抵抗効果が大きく
しかもそのバラツキの小さい磁気抵抗素子を提供するこ
とを目的とするものである。The present invention solves the above-mentioned conventional problems, and provides a method of forming a magnetoresistive element capable of removing a photoresist pattern without substantially changing the magnetoresistive effect. It is an object of the present invention to provide a magnetoresistive element having a small variation.
【００１９】[0019]
【課題を解決するための手段】上記目的を達成するため
に本発明は、外部取り出し用電極を有する絶縁基板の上
面に前記外部取り出し用電極と電気的に接続されるよう
に磁気抵抗薄膜を着膜する工程と、前記磁気抵抗薄膜の
上面に無機材料薄膜を前記磁気抵抗薄膜の厚みより薄く
着膜する工程とを備えたもので、これにより、フォトレ
ジストパターンを除去する際に、磁気抵抗薄膜のパター
ン表面が無機材料薄膜によって保護されているため、酸
素プラズマ中においても、磁気抵抗薄膜パターンが酸化
されることが少ないので、磁気抵抗薄膜のパターンの磁
気抵抗効果をほとんど変化させることなくフォトレジス
トパターンを除去することができるものである。In order to achieve the above object, the present invention provides a method of depositing a magnetoresistive thin film on an upper surface of an insulating substrate having an electrode for external extraction so as to be electrically connected to the electrode for external extraction. Forming a film, and depositing an inorganic material thin film on the upper surface of the magnetoresistive thin film so as to be thinner than the thickness of the magnetoresistive thin film. Since the surface of the pattern is protected by the inorganic material thin film, even in oxygen plasma, the magnetoresistive thin film pattern is hardly oxidized, so that the magnetoresistive effect of the pattern of the magnetoresistive thin film hardly changes. The pattern can be removed.
【００２０】[0020]
【発明の実施の形態】本発明の請求項１に記載の発明
は、外部取り出し用電極を有する絶縁基板の上面に、前
記外部取り出し用電極と電気的に接続されるように磁気
抵抗薄膜を着膜する工程と、前記磁気抵抗薄膜の上面に
無機材料薄膜を前記磁気抵抗薄膜の厚みより薄く着膜す
る工程と、前記無機材料薄膜の上面にフォトレジストを
塗布し硬化させてフォトレジスト塗膜を形成する工程
と、前記フォトレジスト塗膜の一部をフォトリソグラフ
ィプロセスにより除去してフォトレジストパターンを形
成する工程と、前記フォトレジスト塗膜が除去されて露
出した前記無機材料薄膜および磁気抵抗薄膜をドライエ
ッチングで除去する工程と、前記フォトレジストパター
ンを酸素プラズマ処理により除去する工程とを備えたも
ので、磁気抵抗薄膜の上面に無機材料薄膜を着膜してい
るため、酸素プラズマ処理により磁気抵抗薄膜のパター
ン表面が酸化されるということがほとんどなく、従って
磁気抵抗薄膜のパターンの磁気抵抗効果が変化すること
がないものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the first aspect of the present invention, a magnetoresistive thin film is formed on an upper surface of an insulating substrate having an electrode for external extraction so as to be electrically connected to the electrode for external extraction. Forming a film, a step of depositing an inorganic material thin film on the upper surface of the magnetoresistive thin film thinner than the thickness of the magnetoresistive thin film, and applying and curing a photoresist on the upper surface of the inorganic material thin film to form a photoresist coating film. Forming, a step of forming a photoresist pattern by removing a part of the photoresist coating by a photolithography process, and removing the inorganic material thin film and the magnetoresistive thin film that are exposed by removing the photoresist coating. The method includes a step of removing the photoresist pattern by dry etching, and a step of removing the photoresist pattern by oxygen plasma treatment. The surface of the magnetoresistive thin film is hardly oxidized by the oxygen plasma treatment because the inorganic material thin film is deposited on the surface, and the magnetoresistive effect of the pattern of the magnetoresistive thin film does not change. It is.
【００２１】また、無機材料薄膜の厚みが磁気抵抗薄膜
の厚みより薄いので、磁気抵抗薄膜の上面に無機材料薄
膜を着膜しても、そのために磁気抵抗効果が低くなると
いうことはないものである。Further, since the thickness of the inorganic material thin film is smaller than the thickness of the magnetoresistive thin film, even if the inorganic material thin film is deposited on the upper surface of the magnetoresistive thin film, the magnetoresistance effect does not decrease. is there.
【００２２】以下、本発明の一実施の形態における磁気
抵抗素子のパターン形成方法について、図面を参照しな
がら説明する。Hereinafter, a method of forming a pattern of a magnetoresistive element according to an embodiment of the present invention will be described with reference to the drawings.
【００２３】図1は本発明の一実施の形態における磁気
抵抗素子の上面図である。FIG. 1 is a top view of a magnetoresistive element according to an embodiment of the present invention.
【００２４】図において、３１はアルミナまたはガラス
等からなる絶縁基板である。３２は絶縁基板３１の上面
に設けられ、ＮｉＦｅ、ＮｉＦｅＣｏ等の磁性材料から
なる磁気抵抗薄膜の上面にこの磁気抵抗薄膜の厚みより
も薄く設けられた無機材料薄膜を有する複合パターンで
ある。３３は絶縁基板３１の上下面を電気的に接続する
ようにこの絶縁基板３１の四隅の上面から下面にかけて
設けられたＡｇ−Ｐｄ等の導電性材料からなる外部取り
出し用電極である。この外部取り出し用電極３３は磁気
抵抗薄膜の複合パターン３２に生じた電気信号を取り出
し、この磁気抵抗素子が実装されている基板（図示せ
ず）等に配設された電子回路に伝達するものである。In FIG. 1, reference numeral 31 denotes an insulating substrate made of alumina, glass, or the like. Reference numeral 32 denotes a composite pattern provided on the upper surface of the insulating substrate 31 and having an inorganic material thin film provided thinner than the magnetoresistive thin film on the upper surface of the magnetoresistive thin film made of a magnetic material such as NiFe or NiFeCo. Reference numeral 33 denotes an external extraction electrode made of a conductive material such as Ag-Pd provided from the upper surface to the lower surface of the four corners of the insulating substrate 31 so as to electrically connect the upper and lower surfaces of the insulating substrate 31. The external take-out electrode 33 takes out an electric signal generated in the composite pattern 32 of the magnetoresistive thin film and transmits it to an electronic circuit arranged on a substrate (not shown) on which the magnetoresistive element is mounted. is there.
【００２５】以上のように構成された本発明の一実施の
形態における磁気抵抗素子のパターン形成方法について
以下に図面を参照しながら説明する。A method for forming a pattern of a magnetoresistive element according to an embodiment of the present invention having the above-described configuration will be described below with reference to the drawings.
【００２６】図２（ａ）〜（ｅ）は本発明の一実施の形
態における磁気抵抗薄膜のパターン形成方法を示す工程
図である。FIGS. 2A to 2E are process diagrams showing a method for forming a pattern of a magnetoresistive thin film according to an embodiment of the present invention.
【００２７】まず、図２（ａ）に示すように、絶縁基板
４１の上面全体にＮｉＦｅ、ＮｉＦｅＣｏ等の磁性材料
を蒸着、スパッタリング等の工法で０．０４０〜０．４
００μｍ程度の厚さに着膜して磁気抵抗薄膜４２を形成
する。First, as shown in FIG. 2A, a magnetic material such as NiFe, NiFeCo or the like is deposited on the entire upper surface of the insulating substrate 41 by a method such as vapor deposition and sputtering to a thickness of 0.040 to 0.4.
The magnetoresistive thin film 42 is formed by depositing a film having a thickness of about 00 μm.
【００２８】次に、図２（ｂ）に示すように、磁気抵抗
薄膜４２の上面全体にエッチングレートの高い材料であ
るＳｉＯ2をスパッタリング工法で約０．０４μｍ程度
の厚さに着膜し、無機材料薄膜４３を形成する。Next, as shown in FIG. 2B, SiO 2 , which is a material having a high etching rate, is deposited on the entire upper surface of the magnetoresistive thin film 42 to a thickness of about 0.04 μm by a sputtering method. An inorganic material thin film 43 is formed.
【００２９】次に、前工程で得られた無機材料薄膜４３
の上面全体にフォトレジストを塗布してフォトレジスト
塗膜を形成後、このフォトレジスト塗膜が所定のパター
ンとなるように露光・現像して図２（ｃ）に示すよう
に、フォトレジストパターン４４を形成する。Next, the inorganic material thin film 43 obtained in the previous step
After a photoresist film is formed by coating a photoresist on the entire upper surface of the photoresist pattern, the photoresist film is exposed and developed so as to have a predetermined pattern, and as shown in FIG. To form
【００３０】次に、図２（ｄ）に示すように、プラズマ
エッチング法、イオンミリング法等のドライエッチング
によりフォトレジストパターン４４が形成されていない
部分の磁気抵抗薄膜４２および無機材料薄膜４３を除去
して、フォトレジストパターン４４、磁気抵抗薄膜４３
および磁気抵抗薄膜４２からなるパターン４５を形成す
る。Next, as shown in FIG. 2D, portions of the magnetoresistive thin film 42 and the inorganic material thin film 43 where the photoresist pattern 44 is not formed are removed by dry etching such as plasma etching or ion milling. The photoresist pattern 44 and the magnetoresistive thin film 43
And a pattern 45 composed of the magnetoresistive thin film 42 is formed.
【００３１】最後に、図２（ｅ）に示すように、パター
ン４５からフォトレジストパターン４４のみを酸素プラ
ズマ処理により除去して、磁気抵抗薄膜４２と無機材料
薄膜４３とからなる磁気抵抗素子のパターン４６を形成
する。Finally, as shown in FIG. 2E, only the photoresist pattern 44 is removed from the pattern 45 by oxygen plasma treatment, and the pattern of the magnetoresistive element comprising the magnetoresistive thin film 42 and the inorganic material thin film 43 is removed. 46 is formed.
【００３２】この酸素プラズマ処理中において、従来で
は、磁気抵抗薄膜４２の表面が直接酸素イオン中にさら
され、酸化することがあるが、本実施の形態では、磁気
抵抗薄膜４２の表面は無機材料薄膜であるＳｉＯ2に覆
われているため、ほとんど酸化されることはない。した
がって、磁気抵抗効果がほとんど変化することがないも
のである。また、磁気抵抗薄膜が酸化するとその抵抗値
も変化するが、本実施の形態によると磁気抵抗薄膜がほ
とんど酸化することがないので、この酸化によって磁気
抵抗薄膜の抵抗値が変化するということも少なくなる。During the oxygen plasma treatment, the surface of the magnetoresistive thin film 42 may be exposed directly to oxygen ions and oxidized, but in the present embodiment, the surface of the magnetoresistive thin film 42 is made of an inorganic material. Since it is covered with the thin film of SiO 2 , it is hardly oxidized. Therefore, the magnetoresistance effect hardly changes. Further, when the magnetoresistive thin film is oxidized, its resistance value also changes. However, according to the present embodiment, since the magnetoresistive thin film hardly oxidizes, this oxidation rarely changes the resistance value of the magnetoresistive thin film. Become.
【００３３】また、図５に示されているようにＳｉＯ2
の厚みが金属材料膜２４の厚みより厚い場合は、内部応
力の影響が現れて磁気抵抗効果が大幅に低下するが、本
実施の形態によると無機材料薄膜の厚みが磁気抵抗薄膜
の厚みよりも薄いので、内部応力の影響も少なく、磁気
抵抗効果を低下させることもほとんどないものである。
例えば、約０．１０μｍの厚みの磁気抵抗薄膜上に約
０．１０μｍの厚みのＳｉＯ2を着膜しても磁気抵抗薄
膜の磁気抵抗効果や抵抗値はほとんど変化しないが、約
０．１０μｍの厚みの磁気抵抗薄膜上に約０．１５μｍ
以上の厚みのＳｉＯ2を着膜すると、磁気抵抗効果が大
幅に低下する。すなわち、ＳｉＯ2の厚みを磁気抵抗薄
膜の厚みより厚くしなければ、このＳｉＯ2を設けたこ
とによる磁気抵抗薄膜の磁気抵抗効果や抵抗値の変化は
少ない。Further, SiO 2 as shown in FIG. 5
When the thickness is larger than the thickness of the metal material film 24, the effect of internal stress appears and the magnetoresistance effect is greatly reduced. However, according to the present embodiment, the thickness of the inorganic material thin film is greater than the thickness of the magnetoresistance thin film. Since it is thin, it is less affected by internal stress and hardly reduces the magnetoresistance effect.
For example, although the magnetoresistance effect and the resistance value of the magnetoresistive film varies little even when film deposition of SiO 2 having a thickness of about 0.10μm onto the magneto-resistive film of approximately 0.10μm thick, about 0.10μm Approximately 0.15μm on thick magnetoresistive thin film
When SiO 2 having the above thickness is deposited, the magnetoresistance effect is significantly reduced. That is, if increasing the thickness of SiO 2 than the thickness of the magnetoresistive film, the change of the magnetoresistance effect and the resistance value of the magnetoresistive film due to the provision of the SiO 2 is small.
【００３４】さらに、無機材料薄膜の厚みが薄い場合
は、ドライエッチングに必要な時間を短縮できるという
効果もある。厚み約０．１５μｍの無機材料薄膜のエッ
チングに要する時間は、厚み約０．１０μｍの無機材料
薄膜のエッチングに要する時間の約１．４倍であり、こ
のように時間が短縮できるため、生産性を向上させるこ
とができるものである。Further, when the thickness of the inorganic material thin film is small, there is an effect that the time required for dry etching can be shortened. The time required for etching the inorganic material thin film having a thickness of about 0.15 μm is about 1.4 times as long as the time required for etching the inorganic material thin film having a thickness of about 0.10 μm. Can be improved.
【００３５】また、無機材料薄膜の材料としては、他に
Ａｌ2Ｏ3、ＳｉＯ、ＳｉＮ、ＳｉＣ等が用いられ、磁気
抵抗薄膜の酸化防止効果があるので、磁気抵抗効果の劣
化や抵抗値の変化を防ぐことができる。また、特にドラ
イエッチング時間を短縮するためには、エッチングレー
トの高い材料が好ましい。ＳｉＯ2、ＳｉＯ、ＳｉＮ、
ＳｉＣは１分間当たり約０．０３〜０．０５μｍの高速
度でエッチングすることが可能であり、例えば無機材料
薄膜にＡｌ2Ｏ3を用いた場合の約３．５倍の速度でエッ
チングすることができるものである。また、ＳｉＮは熱
膨張係数が小さく耐熱衝撃性が優れているという特徴を
有しているため、はんだ付け時に加わる熱衝撃が大きい
面実装形の磁気抵抗素子用として、高信頼性を確保する
目的に特に適している。As the material of the inorganic material thin film, other materials such as Al 2 O 3 , SiO, SiN, and SiC are used, which have the effect of preventing oxidation of the magnetoresistive thin film. Change can be prevented. In particular, to shorten the dry etching time, a material having a high etching rate is preferable. SiO 2 , SiO, SiN,
SiC can be etched at a high rate of about 0.03 to 0.05 μm per minute. For example, it should be etched at a rate about 3.5 times that when Al 2 O 3 is used for the inorganic material thin film. Can be done. Also, since SiN has a characteristic of a small coefficient of thermal expansion and excellent thermal shock resistance, it is intended to ensure high reliability as a surface mount type magnetoresistive element in which a large thermal shock is applied during soldering. Especially suitable for
【００３６】前述したように本発明のパターン形成方法
によると、磁気抵抗薄膜の上に無機材料薄膜が着膜され
ているため酸素プラズマ処理の際に磁気抵抗薄膜が酸化
されることがない。また磁気抵抗薄膜の上に磁気抵抗薄
膜より薄い無機材料薄膜が着膜されているため、磁気抵
抗薄膜の磁気抵抗効果が無機材料薄膜の内部応力の影響
を受けることが少ない。したがって、本発明のパターン
形成方法によって製造された磁気抵抗素子は本来の磁気
抵抗薄膜が有する固有の能力を充分に発揮できるため結
果的に磁気抵抗効果の値が大きく、しかもそのばらつき
が小さいという特徴を有している。As described above, according to the pattern forming method of the present invention, since the inorganic material thin film is deposited on the magnetoresistive thin film, the magnetoresistive thin film is not oxidized during the oxygen plasma treatment. Further, since the inorganic material thin film thinner than the magnetoresistive thin film is deposited on the magnetoresistive thin film, the magnetoresistance effect of the magnetoresistive thin film is less affected by the internal stress of the inorganic material thin film. Therefore, the magnetoresistive element manufactured by the pattern forming method of the present invention can sufficiently exhibit the inherent ability of the original magnetoresistive thin film, resulting in a large value of the magnetoresistive effect and a small variation thereof. have.
【００３７】[0037]
【発明の効果】以上のように本発明は、磁気抵抗薄膜の
上面にこの磁気抵抗薄膜の厚みより薄く無機材料薄膜を
着膜するもので、フォトレジストパターンを除去する際
に、磁気抵抗薄膜のパターン表面が無機材料薄膜によっ
て保護されているため、酸素プラズマ中においても、磁
気抵抗薄膜パターンが酸化されることが少なく、磁気抵
抗薄膜のパターンの磁気抵抗効果をほとんど変化させる
ことがない磁気抵抗素子のパターン形成方法が得られ、
この方法によって得られる磁気抵抗素子は磁気抵抗効果
が大きいという効果を奏するものである。As described above, according to the present invention, an inorganic material thin film is deposited on the upper surface of the magnetoresistive thin film so as to be thinner than the thickness of the magnetoresistive thin film. Since the surface of the pattern is protected by the inorganic material thin film, the magnetoresistive thin film pattern is hardly oxidized even in oxygen plasma, and the magnetoresistive element hardly changes the magnetoresistive effect of the pattern of the magnetoresistive thin film. And a pattern forming method of
The magnetoresistive element obtained by this method has an effect that the magnetoresistance effect is large.
【図１】本発明の一実施の形態における磁気抵抗素子の
上面図FIG. 1 is a top view of a magnetoresistive element according to an embodiment of the present invention.
【図２】（ａ）〜（ｅ）同磁気抵抗薄膜のパターン形成
方法を示す工程図FIGS. 2A to 2E are process diagrams showing a method for forming a pattern of the same magnetoresistive thin film.
【図３】従来の磁気抵抗素子の上面図FIG. 3 is a top view of a conventional magnetoresistive element.
【図４】（ａ）〜（ｄ）同磁気抵抗薄膜のパターン形成
方法を示す工程図4 (a) to 4 (d) are process diagrams showing a method of forming a pattern of the same magnetoresistive thin film.
【図５】従来の半導体の薄膜のパターンを示す断面図FIG. 5 is a sectional view showing a pattern of a conventional semiconductor thin film.
３１ 絶縁基板 ３３ 外部取り出し用電極 ４１ 絶縁基板 ４２ 磁気抵抗薄膜 ４３ 無機材料薄膜 ４４ フォトレジストパターン ４５ パターン DESCRIPTION OF SYMBOLS 31 Insulating substrate 33 External extraction electrode 41 Insulating substrate 42 Magnetoresistive thin film 43 Inorganic material thin film 44 Photoresist pattern 45 Pattern
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｆ 41/34 Ｈ０１Ｆ 41/34 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01F 41/34 H01F 41/34
Claims (2)
上面に前記外部取り出し用電極と電気的に接続されるよ
うに磁気抵抗薄膜を着膜する工程と、前記磁気抵抗薄膜
の上面に無機材料薄膜を前記磁気抵抗薄膜の厚みより薄
く着膜する工程と、前記無機材料薄膜の上面にフォトレ
ジストを塗布し、硬化させてフォトレジスト塗膜を形成
する工程と、前記フォトレジスト塗膜の一部をフォトリ
ソグラフィプロセスにより除去してフォトレジストパタ
ーンを形成する工程と、前記フォトレジスト塗膜が除去
されて露出した前記無機材料薄膜および磁気抵抗薄膜を
ドライエッチングで除去する工程と、前記フォトレジス
トパターンを酸素プラズマ処理により除去する工程とを
備えた磁気抵抗素子のパターン形成方法。1. A step of depositing a magnetoresistive thin film on an upper surface of an insulating substrate having an electrode for external extraction so as to be electrically connected to the electrode for external extraction, and a thin inorganic material film on the upper surface of the magnetoresistive thin film. Forming a thinner than the thickness of the magnetoresistive thin film, applying a photoresist on the upper surface of the inorganic material thin film, curing and forming a photoresist coating film, a part of the photoresist coating film Removing the photoresist film by a photolithography process to form a photoresist pattern; removing the inorganic material thin film and the magnetoresistive thin film exposed by removing the photoresist coating film by dry etching; Removing by plasma processing.
上面に前記外部取り出し用電極と電気的に接続されるよ
うに設けられた磁気抵抗薄膜と、前記磁気抵抗薄膜の上
面に前記磁気抵抗薄膜の厚みより薄く着膜して設けられ
た無機材料薄膜とを備えた磁気抵抗素子。2. A magnetoresistive thin film provided on an upper surface of an insulating substrate having an external takeout electrode so as to be electrically connected to the external takeout electrode, and a magnetoresistive thin film provided on an upper surface of the magnetoresistive thin film. A magnetoresistive element comprising an inorganic material thin film provided by being deposited thinner than the thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11213269A JP2001044530A (en) | 1999-07-28 | 1999-07-28 | Formation of pattern of magnetoresistance element and magnetoresistance element using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11213269A JP2001044530A (en) | 1999-07-28 | 1999-07-28 | Formation of pattern of magnetoresistance element and magnetoresistance element using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001044530A true JP2001044530A (en) | 2001-02-16 |
Family
ID=16636315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11213269A Pending JP2001044530A (en) | 1999-07-28 | 1999-07-28 | Formation of pattern of magnetoresistance element and magnetoresistance element using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001044530A (en) |
-
1999
- 1999-07-28 JP JP11213269A patent/JP2001044530A/en active Pending
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