JP2001043730A - Conductor composition and wiring board using the same - Google Patents

Conductor composition and wiring board using the same

Info

Publication number
JP2001043730A
JP2001043730A JP11214565A JP21456599A JP2001043730A JP 2001043730 A JP2001043730 A JP 2001043730A JP 11214565 A JP11214565 A JP 11214565A JP 21456599 A JP21456599 A JP 21456599A JP 2001043730 A JP2001043730 A JP 2001043730A
Authority
JP
Japan
Prior art keywords
insulating substrate
wiring layer
wiring board
conductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11214565A
Other languages
Japanese (ja)
Other versions
JP3643264B2 (en
Inventor
Yoji Furukubo
洋二 古久保
Hideto Yonekura
秀人 米倉
Kenichi Nagae
謙一 永江
Masaya Kokubu
正也 國分
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP21456599A priority Critical patent/JP3643264B2/en
Publication of JP2001043730A publication Critical patent/JP2001043730A/en
Application granted granted Critical
Publication of JP3643264B2 publication Critical patent/JP3643264B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a conductor composition which improves adhesive strength of a metallized wiring layer and an insulating substrate, suppresses camber of the substrate and superior in solder wetting property and a wiring board using the composition. SOLUTION: This composition is a conductor composition containing zinc silicate at a ratio of 0.1 to 10 pts.wt. for low resistance metallic powder 100 pts.wt. A wiring board 1 using the composition is provided with an insulating substrate 2, made of glass ceramics and a metallized wiring layer 3 adhered and formed on the surface and/or at the inside of the insulating substrate 2. The metallized wiring layer 3 is formed by adhering and baking the conductor composition on the insulating substrate 2.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は導体組成物およびこ
れを用いた配線基板に関する。
The present invention relates to a conductor composition and a wiring board using the same.

【従来の技術】[Prior art]

【0002】近年、配線基板においては、高周波回路の
対応性、高密度化、高速化が要求され、従来のアルミナ
系セラミック材料に比較して低い誘電率が得られ、配線
層の低抵抗化が可能な低温焼成配線基板が注目されてい
る。
In recent years, wiring boards have been required to be compatible with high-frequency circuits, have high densities, and have high speeds. As a result, a low dielectric constant can be obtained as compared with conventional alumina-based ceramic materials, and the resistance of the wiring layers has been reduced. Possible low-temperature fired wiring boards are drawing attention.

【0003】このような低温焼成配線基板としては、ガ
ラスセラミックスからなる絶縁基板に、銅、金、銀等の
低抵抗金属を主体とするメタライズ配線層を施したもの
が知られている。この配線基板は、ガラスセラミックス
組成物からなるシート状成形体に上記低抵抗金属の粉末
を含む導体ペーストを印刷した後、800〜1000℃
で同時に焼成して作製される。また、この低温焼成配線
基板は、配線層の低抵抗化、絶縁基板の低誘電率、低誘
電損失化などによって、半導体素子を収納する半導体素
子収納用パッケージや、配線回路基板、携帯電話やパー
ソナルハンディホンシステム、各種衛星通信用に使用さ
れる高周波用多層配線基板などのあらゆる分野への応用
が進められている。
As such a low-temperature fired wiring board, there is known an insulating board made of glass ceramic provided with a metallized wiring layer mainly composed of a low-resistance metal such as copper, gold and silver. This wiring board is printed at 800 to 1000 ° C. after printing a conductor paste containing the powder of the low-resistance metal on a sheet-shaped molded body made of a glass ceramic composition.
At the same time. In addition, the low-temperature fired wiring board has a low resistance of a wiring layer, a low dielectric constant and a low dielectric loss of an insulating substrate, and has a semiconductor element housing package for housing a semiconductor element, a wiring circuit board, a mobile phone, and a personal computer. Applications to various fields such as a handy phone system and a high-frequency multilayer wiring board used for various satellite communications are being promoted.

【0004】例えば、ガラスセラミックスからなる絶縁
基板の表面および内部に銅粉末を主成分とするメタライ
ズ配線層を形成する場合には、ガラスセラミックス原料
粉末および有機バインダーに溶剤を添加して調製したス
ラリーをドクターブレード法などによってシート状に形
成し、得られたグリーンシートに貫通孔を打ち抜き加工
し、該貫通孔に銅粉末を主成分とする導体ペーストを充
填し、同時にグリーンシート上に銅粉末を主成分とする
導体ペーストをスクリーン印刷法などで印刷して配線パ
ターンを形成する。そして、配線パターンや貫通孔に導
体が充填されたビアホール導体が形成されたグリーンシ
ートを複数枚加圧積層し、800〜1000℃で焼成す
ることよってメタライズ配線層を有する配線基板が得ら
れる。
For example, when forming a metallized wiring layer containing copper powder as a main component on the surface and inside of an insulating substrate made of glass ceramic, a slurry prepared by adding a solvent to glass ceramic raw material powder and an organic binder is used. Formed into a sheet by doctor blade method or the like, punching a through hole in the obtained green sheet, filling the through hole with a conductive paste mainly composed of copper powder, and at the same time, mainly applying copper powder on the green sheet. A conductor paste as a component is printed by a screen printing method or the like to form a wiring pattern. Then, a plurality of green sheets having a via hole conductor in which a conductor is filled in a wiring pattern or a through-hole are laminated under pressure and fired at 800 to 1000 ° C. to obtain a wiring board having a metallized wiring layer.

【0005】しかし、導体ペーストは、ガラスセラミッ
クスとの親和性が悪いため、形成された配線導体とガラ
スセラミック磁器との接着強度が低く、そのためピンあ
るいはボール付け用のパッド部等の高い接着強度が要求
される部分では熱的または機械的な応力が加わると配線
導体とガラスセラミック磁器とが剥離しやすいという問
題があった。そこで、接着強度を改善するために、酸化
銅粉末を主体とする導体ペーストにZnO等を添加した
り(特開平1−317184号公報)、銅粉末を主成分
とする導体ペーストにZnOを含むガラス粉末を添加す
ることが提案されている(特開平3−46706号公
報)。
However, since the conductor paste has a poor affinity for glass ceramics, the bonding strength between the formed wiring conductor and the glass ceramic porcelain is low, so that the bonding strength of a pin or a pad for ball attachment is high. In a required part, there has been a problem that when a thermal or mechanical stress is applied, the wiring conductor and the glass ceramic porcelain are easily separated. Therefore, in order to improve the adhesive strength, ZnO or the like is added to a conductor paste mainly containing copper oxide powder (Japanese Patent Laid-Open No. 1-317184), or a glass containing ZnO as a conductor paste mainly containing copper powder is used. It has been proposed to add a powder (JP-A-3-46706).

【0006】[0006]

【発明が解決しようとする課題】しかしながら、酸化銅
粉末を主体とする導体ペーストにZnO等を添加する方
法では、銅の焼結性を阻害し、焼成時にガラスセラミッ
クス基板の収縮挙動との間でずれが生じるため、配線基
板の反りをひき起し、さらに焼結が著しく阻害された場
合には接着強度の劣化が生じる。
However, in the method of adding ZnO or the like to a conductor paste mainly composed of copper oxide powder, the sinterability of copper is impaired, and the shrinkage behavior of the glass-ceramic substrate during firing is reduced. Since the displacement occurs, the wiring board is warped, and when sintering is significantly inhibited, the adhesive strength is deteriorated.

【0007】一方、銅粉末を主成分とする導体ペースト
にZnOを含むガラス粉末を添加する方法は、高純度な
AlN基板に適用するのに好適な例であり、この方法を
ガラスセラミックス基板に適用した場合には、銅粉末の
焼結性は向上するものの、ガラスセラミックス基板との
相互作用により銅とガラス成分との分離が生じて、導体
ペースト内に含有されたガラス成分が銅メタライズ層の
表面に浮上し、ハンダ濡れ性を阻害するという問題があ
る。
On the other hand, a method of adding a glass powder containing ZnO to a conductor paste containing copper powder as a main component is a suitable example to be applied to a high-purity AlN substrate, and this method is applied to a glass ceramic substrate. In this case, the sinterability of the copper powder is improved, but the interaction with the glass-ceramic substrate causes the separation of copper and the glass component, and the glass component contained in the conductive paste becomes the surface of the copper metallized layer. And hinder solder wettability.

【0008】本発明の目的は、メタライズ配線層とガラ
スセラミックスからなる絶縁基板との接着強度を向上さ
せ、かつ基板の反りを抑制し、ハンダ濡れ性にも優れた
導体組成物およびこれを用いた配線基板を提供すること
である。
An object of the present invention is to provide a conductor composition which improves the adhesive strength between a metallized wiring layer and an insulating substrate made of glass ceramics, suppresses warpage of the substrate, and is excellent in solder wettability. It is to provide a wiring board.

【0009】[0009]

【課題を解決するための手段】本発明者らは上記課題を
解決すべく鋭意研究を重ねた結果、銅粉末等の低抵抗金
属粉末に所定量の亜鉛シリケートを添加した導体組成物
を使用してメタライズ配線層を形成する場合には、ガラ
スセラミックスからなる絶縁基板に対する接着強度が向
上し、かつハンダ濡れ性が良好であり、しかも絶縁基板
と導体ペーストの焼成収縮差に起因する基板の反りを抑
制できるという新たな事実を見出し、本発明を完成する
に到った。
Means for Solving the Problems As a result of intensive studies to solve the above problems, the present inventors have used a conductor composition obtained by adding a predetermined amount of zinc silicate to a low-resistance metal powder such as a copper powder. When the metallized wiring layer is formed by the method, the adhesive strength to the insulating substrate made of glass ceramic is improved, the solder wettability is good, and the warpage of the substrate due to the difference in firing shrinkage between the insulating substrate and the conductive paste is reduced. They have found a new fact that they can be suppressed, and have completed the present invention.

【0010】すなわち、本発明の導体組成物は、低抵抗
金属粉末100重量部に対して亜鉛シリケートを0.1
〜10重量部の割合で含有したことを特徴とする。本発
明において、前記低抵抗金属粉末は平均粒径0.5〜1
0μmの球状粉末であるのが好ましい。これにより、メ
タライズ配線層の収縮等の焼結挙動をガラスセラミック
ス基板の焼結挙動により一層近似させることができるた
め、基板の反りを抑制でき、さらにスクリーン印刷に好
適な粒径であるために印刷精度が向上する。
That is, the conductor composition of the present invention comprises zinc silicate in an amount of 0.1 part by weight per 100 parts by weight of the low-resistance metal powder.
-10 parts by weight. In the present invention, the low-resistance metal powder has an average particle size of 0.5 to 1
It is preferably a 0 μm spherical powder. As a result, the sintering behavior such as shrinkage of the metallized wiring layer can be more closely approximated to the sintering behavior of the glass-ceramic substrate, so that the warpage of the substrate can be suppressed, and since the particle size is suitable for screen printing, printing is performed. The accuracy is improved.

【0011】また、前記低抵抗金属粉末が銅粉末であ
り、その全部または一部を還元性雰囲気中での焼成によ
って銅単体に還元される酸化銅の形態で含有させ、その
酸化銅の量を調整することによって酸化銅の還元時の体
積収縮によるメタライズ配線層の収縮率を絶縁基板の収
縮率に整合させることができる。本発明の配線基板は、
ガラスセラミックスからなる絶縁基板と、この絶縁基板
の表面および/または内部に被着形成されたメタライズ
配線層とを備え、前記メタライズ配線層が前記した導体
組成物を前記絶縁基板に被着し焼成したものであること
を特徴とする。
The low-resistance metal powder is copper powder, and the whole or a part thereof is contained in the form of copper oxide which is reduced to simple copper by firing in a reducing atmosphere, and the amount of the copper oxide is reduced. By adjusting, the shrinkage rate of the metallized wiring layer due to the volume shrinkage during the reduction of copper oxide can be matched with the shrinkage rate of the insulating substrate. The wiring board of the present invention,
An insulating substrate made of glass ceramics, and a metallized wiring layer adhered and formed on the surface and / or inside of the insulating substrate, wherein the metallized wiring layer is formed by applying the conductor composition described above to the insulating substrate and firing the same. Characterized in that:

【0012】本発明において、前記絶縁基板は、0〜4
00℃までの熱膨張係数が8〜18ppm/℃であるの
が好ましい。これにより、絶縁基板をハンダボールなど
の接続端子を介して、有機樹脂を絶縁基板中に含有する
熱膨張係数が13〜30ppm/℃のプリント配線基板
に表面実装した場合のハンダ接続部に加わる熱応力を緩
和し、その結果、実装信頼性が改善される。
In the present invention, the insulating substrate may have a size of 0-4.
The coefficient of thermal expansion up to 00 ° C is preferably from 8 to 18 ppm / ° C. Thereby, the heat applied to the solder connection portion when the insulating substrate is surface-mounted on a printed wiring board having a thermal expansion coefficient of 13 to 30 ppm / ° C. containing an organic resin in the insulating substrate via a connection terminal such as a solder ball. Relieves the stress, resulting in improved mounting reliability.

【0013】[0013]

【発明の実施の形態】以下、図面に基づいて、本発明の
導体組成物およびこれを用いた配線基板を説明する。図
1は、本発明の一実施形態にかかる配線基板の構造を示
しており、複数のガラスセラミックス絶縁層からなる多
層配線基板である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a conductor composition of the present invention and a wiring board using the same will be described with reference to the drawings. FIG. 1 shows a structure of a wiring board according to an embodiment of the present invention, which is a multilayer wiring board including a plurality of glass ceramic insulating layers.

【0014】図1に示すように、配線基板1は、絶縁基
板2とメタライズ配線層3とを含んでいる。絶縁基板2
は、複数のガラスセラミック絶縁層2a・・・2dを積
層した積層体から構成され、各層間および絶縁基板2の
表面には銅粉末等の低抵抗金属粉末を主成分とする厚み
が5〜30μm程度のメタライズ配線層3が被着形成さ
れている。また、絶縁基板2内には、各絶縁層2a・・
・2dを厚さ方向に貫通した直径が50〜200μm程
度のビアホール導体4が形成されている。
As shown in FIG. 1, a wiring board 1 includes an insulating substrate 2 and a metallized wiring layer 3. Insulating substrate 2
Is composed of a laminated body in which a plurality of glass ceramic insulating layers 2a... 2d are laminated, and a thickness mainly composed of a low-resistance metal powder such as copper powder is 5 to 30 μm on each interlayer and on the surface of the insulating substrate 2. The metallized wiring layer 3 is formed to a degree. Further, in the insulating substrate 2, each insulating layer 2a,.
A via hole conductor 4 having a diameter of about 50 to 200 μm penetrating 2d in the thickness direction is formed.

【0015】絶縁基板2は、少なくともSiO2 を含有
するガラス、またはSiO2 を含有するガラスとフィラ
ーとの複合材料からなるガラスセラミックスからなる。
具体的には、ガラスセラミックス材料のガラス成分は、
複数の金属酸化物から構成され、焼成後において非晶
質、または焼成によってコージェライト、ムライト、ア
ノーサイト、セルジアン、スピネル、ガーナイト、ウィ
レマイト、ドロマイト、リチウムシリケートやその置換
誘導体の結晶を析出する結晶化ガラスによって構成され
る。
The insulating substrate 2 is made of glass ceramics made of glass containing at least SiO 2 or a composite material of glass containing SiO 2 and a filler.
Specifically, the glass component of the glass ceramic material is
Crystallization composed of a plurality of metal oxides, after sintering, amorphous or by sintering to precipitate cordierite, mullite, anorthite, serdian, spinel, garnite, willemite, dolomite, lithium silicate and substituted derivatives thereof Composed of glass.

【0016】ガラス成分としては、例えばSiO2 以外
にLi2 O,K2 O,Na2 O等のアルカリ金属酸化
物、CaO,MgOなどのアルカリ土類金属酸化物、A
2 3 ,P2 5 ,ZnO,B2 3 およびPbOか
ら選ばれる1種または2種以上を含有するホウ珪酸ガラ
ス、アルカリ珪酸ガラス、BaO系ガラス、ナトリウム
ソーダーガラスなどが挙げられる。前記フィラー成分と
しては、例えばクオーツ、クリストバライト、石英、コ
ランダム(αアルミナ)、ディオプサイド、ムライト、
コージェライトおよびフォルステライトから選ばれる1
種または2種以上が使用可能である。
As the glass component, for example, SiO 2TwoOther than
To LiTwoO, KTwoO, NaTwoOxidation of alkali metals such as O
Substances, alkaline earth metal oxides such as CaO and MgO, A
lTwoO Three, PTwoOFive, ZnO, BTwoOThreeAnd PbO
Borosilicate glass containing one or more selected from the group consisting of:
, Alkali silicate glass, BaO-based glass, sodium
And soda glass. The filler component and
For example, quartz, cristobalite, quartz,
Random (α-alumina), diopside, mullite,
1 selected from cordierite and forsterite
Species or two or more can be used.

【0017】ガラス成分とフィラー成分との割合は、ガ
ラス成分が30〜70重量%、フィラー成分が70〜3
0重量%であるのが適当である。本発明における前記絶
縁基板2は、0〜400℃までの熱膨張係数が8〜18
ppm/℃であるのが好ましい。絶縁基板2の熱膨張係
数が8ppm/℃を下回ると、絶縁基板2とプリント配
線板とのハンダ接合部に熱応力が加わり実装信頼性が低
下するという問題があり、逆に18ppm/℃を超える
と絶縁基板2とシリコンチップとのハンダ接合部に熱応
力が加わり実装信頼性が低下するという問題がある。
The ratio of the glass component to the filler component is 30 to 70% by weight for the glass component and 70 to 3% for the filler component.
Suitably, it is 0% by weight. The insulating substrate 2 according to the present invention has a coefficient of thermal expansion from 0 to 400 ° C. of 8 to 18.
It is preferably ppm / ° C. If the coefficient of thermal expansion of the insulating substrate 2 is lower than 8 ppm / ° C., there is a problem that a thermal stress is applied to a solder joint between the insulating substrate 2 and the printed wiring board, thereby lowering the mounting reliability. In addition, there is a problem that thermal stress is applied to a solder joint between the insulating substrate 2 and the silicon chip, and mounting reliability is reduced.

【0018】メタライズ配線層3は低抵抗金属粉末を主
成分とする。本発明によれば、メタライズ配線層3は、
低抵抗金属粉末100重量部に対して亜鉛シリケートを
0.1〜10重量部の割合で含有した導体組成物を積層
・焼成して形成される。
The metallized wiring layer 3 contains a low resistance metal powder as a main component. According to the present invention, the metallized wiring layer 3
It is formed by laminating and firing a conductive composition containing 0.1 to 10 parts by weight of zinc silicate with respect to 100 parts by weight of the low-resistance metal powder.

【0019】低抵抗金属粉末としては、銅、銀、金等の
粉末か挙げられ、特に銅粉末を使用するのが配線基板の
高密度化および低抵抗導体製造の低コスト化、さらに信
頼性向上のうえからも好ましい。また、低抵抗金属粉末
は平均粒径0.5〜10μm、好ましくは2〜7μm、
より好ましくは3〜5μmの球状粉末であるのが好まし
く、平均粒径が0.5μmを下回る場合には銅粉末が過
焼結を起こし、接着強度が低下するという問題があり、
逆に10μmを超えた場合には微細配線加工ができない
という問題がある。前記亜鉛シリケートとしては、Zn
OとSiO2 との反応物からなる結晶性の複合酸化物で
あればよく、例えばZnO・2SiO2 (ZnSi2
5 )、2ZnO・SiO2 (Zn2 SiO4 )、3Zn
O・SiO2 (Zn3 SiO5 )等が挙げられる。
Examples of the low-resistance metal powder include powders of copper, silver, gold, and the like. Particularly, use of copper powder increases the density of a wiring board, reduces the cost of manufacturing a low-resistance conductor, and further improves reliability. It is also preferable from the viewpoint of the above. The low-resistance metal powder has an average particle size of 0.5 to 10 μm, preferably 2 to 7 μm,
More preferably, it is preferably a spherical powder of 3 to 5 μm, and when the average particle size is less than 0.5 μm, there is a problem that the copper powder causes oversintering and the adhesive strength is reduced,
Conversely, when the thickness exceeds 10 μm, there is a problem that fine wiring cannot be processed. As the zinc silicate, Zn
O and it may be a crystalline complex oxide comprising a reaction product of SiO 2, for example, ZnO · 2SiO 2 (ZnSi 2 O
5 ) 2ZnO.SiO 2 (Zn 2 SiO 4 ), 3Zn
O.SiO 2 (Zn 3 SiO 5 ) and the like.

【0020】かかる亜鉛シリケートは、一般にZnOよ
りも融点が低いため、配線層3の焼結がZnOを含有し
たものよりも低い温度で焼結が進むため、焼結性が向上
するという利点がある。例えば、前記ZnSi2 5
融点は約1512℃であり、ZnOの融点約1972℃
に比べて低いため、本発明の導体組成物はおよそ900
℃近くで焼結が進行するのに対して、ZnOを含有した
従来の導体組成物はおよそ1000℃近くで焼結が進行
する。従って、絶縁基板との同時焼成時において、Zn
Oを添加した導体組成物に比べて、基板との焼結のタイ
ミングが合わせやすくなり、基板との接着強度が向上
し、基板の反りを有効に抑制できる。
Since such a zinc silicate generally has a lower melting point than ZnO, the sintering of the wiring layer 3 proceeds at a lower temperature than that containing ZnO, so that there is an advantage that sinterability is improved. . For example, the melting point of ZnSi 2 O 5 is about 1512 ° C., and the melting point of ZnO is about 1972 ° C.
, The conductor composition of the present invention is approximately 900
The sintering proceeds at around 1000C, whereas the sintering of the conventional conductor composition containing ZnO proceeds at around 1000C. Therefore, when co-firing with the insulating substrate, Zn
Compared to the conductor composition to which O is added, the timing of sintering with the substrate is easily adjusted, the adhesive strength with the substrate is improved, and the warpage of the substrate can be effectively suppressed.

【0021】前記亜鉛シリケートは、低抵抗金属粉末1
00重量部に対して0.1〜10重量部の割合で含有し
ていることが必要であって、亜鉛シリケートの含有量が
0.1重量部を下回る場合にはメタライズ配線層3とガ
ラスセラミックスからなる絶縁基板2との親和性が悪化
し、その結果、メタライズ配線層3と絶縁基板2との接
着強度が弱くなる。一方、亜鉛シリケートの含有量が1
0重量部を超える場合には、低抵抗金属粉末の焼結性を
劣化させ、ハンダ濡れ性、接着強度、基板反り等に悪影
響を及ぼす。亜鉛シリケートは1〜5重量部の割合で含
有されているのがより好ましい。
The zinc silicate is a low-resistance metal powder 1
When the content of zinc silicate is less than 0.1 part by weight, the metallized wiring layer 3 and the glass ceramics are required. Of the metallized wiring layer 3 and the insulating substrate 2 is weakened. On the other hand, when the content of zinc silicate is 1
When the amount exceeds 0 parts by weight, the sinterability of the low-resistance metal powder is deteriorated, and the solder wettability, the adhesive strength, the substrate warpage and the like are adversely affected. More preferably, zinc silicate is contained in a proportion of 1 to 5 parts by weight.

【0022】また、使用する亜鉛シリケートは平均粒径
が0.1〜3μm程度であるのが好ましい。前記ビアホ
ール導体4は、前記メタライズ配線層3と同様な成分か
らなる導体であるのがよい。
The zinc silicate used preferably has an average particle size of about 0.1 to 3 μm. The via hole conductor 4 is preferably a conductor having the same components as those of the metallized wiring layer 3.

【0023】多層配線基板の表面のメタライズ配線層3
は、ICチップ等の各種電子部品5を搭載するためのパ
ッドとして、シールド用導体膜として、さらには外部回
路と接続する端子電極として用いられる。各種電子部品
5は配線層3にハンダや導電性接着剤等の接合剤6を介
して接合される。なお、図示していないが、表面に珪化
モリブデンなどの厚膜抵抗体膜や配線保護膜等を形成し
ても構わない。
The metallized wiring layer 3 on the surface of the multilayer wiring board
Are used as pads for mounting various electronic components 5 such as IC chips, as conductive films for shielding, and as terminal electrodes for connection to external circuits. Various electronic components 5 are joined to the wiring layer 3 via a joining agent 6 such as solder or a conductive adhesive. Although not shown, a thick-film resistor film such as molybdenum silicide, a wiring protection film, or the like may be formed on the surface.

【0024】次に、本発明の配線基板を作製する方法に
ついて説明する。まず、上述したようなガラス成分、ま
たはガラス成分とフィラー成分とを混合してガラスセラ
ミックス組成物を調製し、その混合物に有機バインダー
等を加えた後、ドクターブレード法、圧延法、プレス法
等の適宜な成形手段によりシート状に成形してグリーン
シートを得る。
Next, a method for manufacturing the wiring board of the present invention will be described. First, a glass ceramic composition as described above, or a glass component and a filler component are mixed to prepare a glass ceramic composition, an organic binder is added to the mixture, and then a doctor blade method, a rolling method, a pressing method, or the like. The sheet is formed into a green sheet by an appropriate forming means to obtain a green sheet.

【0025】ついで、このグリーンシートの表面に導体
ペーストをスクリーン印刷等により配線パターン状に印
刷する。導体ペーストの主成分となる低抵抗金属粉末に
は、前記した所定粒径の金属単体(例えば銅)もしくは
該金属の酸化物(例えば酸化銅)またはそれらの混合物
が用いられる。金属酸化物は還元性雰囲気で焼成される
ことにより実質的に金属単体の粉末に還元される。
Next, a conductor paste is printed on the surface of the green sheet in a wiring pattern by screen printing or the like. As the low-resistance metal powder which is a main component of the conductor paste, the above-described metal simple substance (for example, copper), an oxide of the metal (for example, copper oxide), or a mixture thereof is used. The metal oxide is substantially reduced to a simple metal powder by firing in a reducing atmosphere.

【0026】導体ペーストは、前記した低抵抗金属粉末
および所定量の亜鉛シリケートといった無機成分のほ
か、アクリル樹脂等の有機バインダー、α−テルピネオ
ール、ジブチルフタレート、ブチルカルビトール等の有
機溶剤等を均質に混合して調製される。有機バインダー
は無機成分100重量部に対して1〜10重量部、有機
溶剤は無機成分100重量部に対して5〜30重量部の
割合で混合するのが好ましい。
The conductive paste is homogeneously mixed with the above-mentioned inorganic components such as the low-resistance metal powder and a predetermined amount of zinc silicate, an organic binder such as an acrylic resin, and an organic solvent such as α-terpineol, dibutyl phthalate and butyl carbitol. It is prepared by mixing. The organic binder is preferably mixed at a ratio of 1 to 10 parts by weight with respect to 100 parts by weight of the inorganic component, and the organic solvent is preferably mixed at a ratio of 5 to 30 parts by weight with respect to 100 parts by weight of the inorganic component.

【0027】一方、ビアホール導体4を形成するには、
前記グリーンシートにレーザー、マイクロドリル、パン
チング等により直径50〜200μm程度の貫通孔を形
成し、この貫通孔の内部に前記配線層3と同じ導体ペー
ストを充填する。その後、配線層3やビアホール導体4
が形成されたグリーンシートを積層圧着して積層体を形
成する。ついで、積層体を400〜800℃の窒素雰囲
気中で加熱処理してグリーンシート内や導体ペースト内
に含有されている有機成分を分解除去した後、800〜
1000℃の窒素雰囲気(還元性雰囲気)中で同時焼成
することによりメタライズ配線層3およびビアホール導
体4を備えた多層配線基板を作製することができる。
On the other hand, to form the via-hole conductor 4,
A through hole having a diameter of about 50 to 200 μm is formed in the green sheet by laser, micro drill, punching or the like, and the inside of the through hole is filled with the same conductive paste as the wiring layer 3. After that, the wiring layer 3 and the via hole conductor 4
The green sheets on which are formed are laminated and pressed to form a laminate. Next, the laminate is subjected to a heat treatment in a nitrogen atmosphere at 400 to 800 ° C. to decompose and remove organic components contained in the green sheet and the conductor paste.
Simultaneous firing in a nitrogen atmosphere (reducing atmosphere) at 1000 ° C. makes it possible to manufacture a multilayer wiring board including the metallized wiring layer 3 and the via-hole conductor 4.

【0028】なお、本発明の配線基板は上述したような
多層配線基板に限定されるものではなく、単層のガラス
セラミックのグリーンシート上に前記と同様な導体ペー
ストで配線パターンを印刷し、同時焼成した配線基板を
も包含する。また、基板が多層構造であっても、内部の
メタライズ配線層4のみを積層体と同時に焼成処理し、
表面の配線層4をこの焼成した積層体の表面に焼き付け
処理して形成したものであってもよい。
The wiring board of the present invention is not limited to the above-described multilayer wiring board. A wiring pattern is printed on a single-layer glass ceramic green sheet with the same conductive paste as described above, and the wiring pattern is simultaneously printed. A fired wiring board is also included. Even if the substrate has a multilayer structure, only the internal metallized wiring layer 4 is baked simultaneously with the laminated body,
The wiring layer 4 on the surface may be formed by baking on the surface of the fired laminate.

【0029】[0029]

【実施例】以下、実施例をあげて本発明を詳細に説明す
るが、本発明の導体組成物およびこれを用いた配線基板
は以下の実施例のみに限定されるものではない。
EXAMPLES Hereinafter, the present invention will be described in detail with reference to examples, but the conductor composition of the present invention and a wiring board using the same are not limited to the following examples.

【0030】実施例 絶縁基板用のグリーンシートの材料として、重量%で7
4%SiO2 −14%Li2 O−4%Al2 3−2%
2 O−2%ZnO−2%Na2 O(屈伏点480℃)
の組成を有するガラス40体積%に対して、フィラー成
分としてSiO 2 を30体積%、フォルステライト30
体積%を混合したものを用いた。これに分子量30万の
アクリル系バインダーと可塑剤、分散剤および溶剤を加
え混合し、得られた泥しょうをドクターブレード法によ
り平均厚さ200μmのグリーンシートに成形した。一
方、平均粒径が4μmの銅粉末に、添加物として亜鉛シ
リケート(平均粒径1μm)またはZnOもしくはZn
Oとガラス粉末とを表1に示す割合で加え、これら無機
成分100重量部に対して有機バインダーとしてアクリ
ル樹脂2重量部、有機溶剤としてα−テルピネオール1
5重量部を添加し、混練して導体ペーストを調製した。
EXAMPLE As a material for a green sheet for an insulating substrate, 7% by weight was used.
4% SiOTwo-14% LiTwoO-4% AlTwoOThree-2%
KTwoO-2% ZnO-2% NaTwoO (Yield point 480 ° C)
40% by volume of glass having a composition of
SiO as minute Two30% by volume, Forsterite 30
What mixed volume% was used. This has a molecular weight of 300,000
Add acrylic binder and plasticizer, dispersant and solvent
And mix the resulting slurry using the doctor blade method.
Into a green sheet having an average thickness of 200 μm. one
On the other hand, zinc powder was added as an additive to copper powder having an average particle size of 4 μm.
Like (average particle size 1μm) or ZnO or Zn
O and glass powder were added at the ratios shown in Table 1,
Acrylic as an organic binder to 100 parts by weight of the component
Resin, 2 parts by weight of α-terpineol 1 as an organic solvent
5 parts by weight were added and kneaded to prepare a conductor paste.

【0031】このようにして得られた導体ペーストとグ
リーンシートとを用いて、以下に示す3種類のサンプル
を作製した。 (1) 接着強度を評価するサンプル 焼成後の寸法が2cm×2cmで厚さ20μmのパター
ンをグリーンシート上にスクリーン印刷し、このグリー
ンシートの下部に同じグリーンシート5枚を加圧積層し
た。 (2) 基板反りを評価するサンプル 焼成後の寸法が10mm×10mmで厚さ20μmのパ
ターンをグリーンシート上にスクリーン印刷し、このグ
リーンシートの下部に同じグリーンシート1枚を加圧積
層した。 (3) ハンダ濡れ性を評価するサンプル 焼成後の直径が0.1mmの円形パターンをグリーンシ
ート上にスクリーン印刷し、このグリーンシートの下部
に同じグリーンシート5枚を加圧積層した。
Using the conductive paste and green sheet thus obtained, the following three types of samples were prepared. (1) Sample for Evaluating Adhesive Strength A pattern having a size of 2 cm × 2 cm and a thickness of 20 μm after firing was screen-printed on a green sheet, and the same five green sheets were laminated under the green sheet under pressure. (2) Sample for evaluating substrate warpage A pattern having a size of 10 mm × 10 mm and a thickness of 20 μm after firing was screen-printed on a green sheet, and one green sheet was laminated under the green sheet under pressure. (3) Sample for evaluating solder wettability A circular pattern having a diameter of 0.1 mm after firing was screen-printed on a green sheet, and the same five green sheets were laminated under the green sheet under pressure.

【0032】このようにして配線パターンが形成された
未焼成状態の積層体を、有機バインダー等の有機成分を
分解除去するために、窒素雰囲気中にて700℃で3時
間保持した後、950℃に昇温して1時間保持して焼成
し、配線基板を得た。なお、前記グリーンシートを焼成
して得た絶縁基板の0〜400℃での熱膨張係数は1
1.5ppm/℃であった。
The unfired laminate on which the wiring pattern has been formed is held at 700 ° C. for 3 hours in a nitrogen atmosphere in order to decompose and remove organic components such as an organic binder. And heated for 1 hour and fired to obtain a wiring board. The thermal expansion coefficient at 0 to 400 ° C. of the insulating substrate obtained by firing the green sheet is 1
1.5 ppm / ° C.

【0033】前記(1) 〜(3) のサンプルを用いて得た各
配線基板について、以下の方法にて特性を評価した。 (1) 接着強度の評価方法 得られた配線基板の表面に存在する一辺が2mm四方の
銅配線層に厚さ1μmのNiメッキを施し、その表面に
厚さ0.1μmの金メッキを施した。次に、この金メッ
キ層上に直径0.8mmの錫メッキ銅線を基板と平行に
ハンダ付けし、ついで錫メッキ銅線を基板に対して垂直
方向に曲げ、錫メッキ銅線を10mm/分の引っ張り速
度で垂直方向に引っ張り、銅配線層と絶縁基板との界面
が破断したときの最大荷重を銅配線層の接着強度として
評価した。このとき、接着強度が2kg/2mm角を超
えるものを良品とした。 (2) 基板反りの評価方法 配線基板の表面に存在する一辺が10mm四方の銅配線
層の対角方向(長さ14.2mm)に沿って接触型の表
面粗さ計にて表面粗さを測定し、50μm/14.2m
m以下のものを良品とした。 (3) ハンダ濡れ性の評価方法 配線基板の表面に存在する円形パターンの銅配線層にフ
ラックスを塗布し、235℃に保たれた共晶ハンダ中
に、鉛直方向に対して45度の角度で5秒間浸漬したも
のを実体顕微鏡にて観察し、銅配線層のパターン全面が
ハンダに濡れているものを良品とした。これらの試験結
果を表1に示す。
The characteristics of each wiring board obtained by using the samples (1) to (3) were evaluated by the following methods. (1) Evaluation Method of Adhesive Strength A 1 μm-thick Ni plating was applied to a 2 mm square copper wiring layer present on the surface of the obtained wiring board, and a 0.1 μm-thick gold plating was applied to the surface. Next, a tin-plated copper wire having a diameter of 0.8 mm was soldered on the gold-plated layer in parallel with the substrate, and then the tin-plated copper wire was bent in a direction perpendicular to the substrate, so that the tin-plated copper wire became 10 mm / min. The film was pulled in the vertical direction at a pulling speed, and the maximum load when the interface between the copper wiring layer and the insulating substrate was broken was evaluated as the adhesive strength of the copper wiring layer. At this time, those having an adhesive strength exceeding 2 kg / 2 mm square were regarded as good products. (2) Evaluation method of substrate warpage A surface roughness of a copper wiring layer having a side of 10 mm on a surface of a wiring substrate and measuring 10 mm square was measured by a contact-type surface roughness meter along a diagonal direction (length 14.2 mm). Measured, 50μm / 14.2m
m or less were regarded as good products. (3) Solder wettability evaluation method A flux was applied to a copper wiring layer having a circular pattern existing on the surface of a wiring board, and was placed in a eutectic solder maintained at 235 ° C. at an angle of 45 ° with respect to the vertical direction. What was immersed for 5 seconds was observed with a stereoscopic microscope, and the one in which the entire pattern of the copper wiring layer was wet with solder was regarded as a good product. Table 1 shows the test results.

【0034】[0034]

【表1】 [Table 1]

【0035】表から明らかなように、添加物としての亜
鉛シリケートの含有量が0.1重量部を下回っている試
料No.1および2では接着強度が劣りかつ基板の反り
も大きかった。一方、亜鉛シリケートの含有量が10重
量部を超えている試料No.9では接着強度が劣り、基
板の反りも大きいのに加えて、ハンダ濡れ性も劣ってい
た。また、従来技術にかかる試料No.13〜16で
は、接着強度は優れているものの、基板の反りおよび/
またはハンダ濡れ性が劣っていた。これらに対して、亜
鉛シリケートの含有量が0.1〜10重量部の範囲内に
ある本発明にかかる試料No.3〜8、10〜12およ
び17〜20では接着強度が高く、基板の反りも抑制さ
れ、さらにハンダ濡れ性も良好であった。
As is clear from the table, Sample No. 1 containing less than 0.1 part by weight of zinc silicate as an additive. In Examples 1 and 2, the adhesive strength was inferior and the warpage of the substrate was large. On the other hand, the sample No. having a zinc silicate content of more than 10 parts by weight. In No. 9, the adhesive strength was poor, the warpage of the substrate was large, and the solder wettability was also poor. Further, the sample No. In Nos. 13 to 16, although the adhesive strength is excellent, the warpage of the substrate and / or
Or the solder wettability was poor. On the other hand, the sample No. according to the present invention in which the content of zinc silicate is in the range of 0.1 to 10 parts by weight. In Nos. 3 to 8, 10 to 12, and 17 to 20, the adhesive strength was high, the warpage of the substrate was suppressed, and the solder wettability was also good.

【0036】[0036]

【発明の効果】本発明によれば、低抵抗金属に所定量の
亜鉛シリケートを含有させることにより、特にガラスセ
ラミックスからなる絶縁基板との親和性が改善されるた
め、接着強度が向上すると共に、ハンダ濡れ性が良好で
あり、基板の反りも抑制された配線基板を得ることがで
きるという効果がある。
According to the present invention, by incorporating a predetermined amount of zinc silicate into a low-resistance metal, the affinity with an insulating substrate made of glass ceramics is particularly improved. There is an effect that a wiring board having good solder wettability and suppressing warpage of the board can be obtained.

【0037】[0037]

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態にかかる配線基板の概略断
面図である。
FIG. 1 is a schematic sectional view of a wiring board according to an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 配線基板 2 絶縁基板 3 メタライズ配線層 4 ビアホール導体 5 電子部品 DESCRIPTION OF SYMBOLS 1 Wiring board 2 Insulating board 3 Metallized wiring layer 4 Via-hole conductor 5 Electronic component

───────────────────────────────────────────────────── フロントページの続き (72)発明者 永江 謙一 鹿児島県国分市山下町1番4号 京セラ株 式会社総合研究所内 (72)発明者 國分 正也 鹿児島県国分市山下町1番4号 京セラ株 式会社総合研究所内 Fターム(参考) 4E351 AA07 BB31 CC12 CC22 CC35 DD04 DD05 DD06 DD08 DD33 DD52 EE02 EE03 EE10 EE11 EE27 GG07 GG15 GG16 5G301 AA08 AA26 AA27 AB20 AD10 DA06 DA22 DA23 DD01  ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Kenichi Nagae 1-4-4 Yamashita-cho, Kokubu-shi, Kagoshima Inside the Kyocera Research Institute (72) Inventor Masaya Kokubu 1-4-4 Yamashita-cho, Kokubu-shi, Kagoshima F-term in Kyocera Research Institute (reference) 4E351 AA07 BB31 CC12 CC22 CC35 DD04 DD05 DD06 DD08 DD33 DD52 EE02 EE03 EE10 EE11 EE27 GG07 GG15 GG16 5G301 AA08 AA26 AA27 AB20 AD10 DA06 DA22 DA23 DD01

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】低抵抗金属粉末100重量部に対して亜鉛
シリケートを0.1〜10重量部の割合で含有したこと
を特徴とする導体組成物。
1. A conductor composition comprising 0.1 to 10 parts by weight of zinc silicate based on 100 parts by weight of a low-resistance metal powder.
【請求項2】前記低抵抗金属粉末が平均粒径0.5〜1
0μmの球状粉末である請求項1記載の導体組成物。
2. The low-resistance metal powder has an average particle size of 0.5-1.
The conductor composition according to claim 1, which is a spherical powder having a diameter of 0 µm.
【請求項3】前記低抵抗金属粉末が銅粉末であり、その
全部または一部が、還元性雰囲気中での焼成によって銅
単体に還元される酸化銅の形態で含有されている請求項
1記載の導体組成物。
3. The low-resistance metal powder is a copper powder, all or a part of which is contained in the form of copper oxide which is reduced to simple copper by firing in a reducing atmosphere. Conductor composition.
【請求項4】ガラスセラミックスからなる絶縁基板と、
この絶縁基板の表面および/または内部に被着形成され
たメタライズ配線層とを備え、このメタライズ配線層が
請求項1ないし3のいずれかに記載の導体組成物を前記
絶縁基板に被着し焼成したものであることを特徴とする
配線基板。
4. An insulating substrate made of glass ceramic,
4. A metallized wiring layer formed on the surface and / or inside of the insulating substrate, wherein the metallized wiring layer is formed by applying the conductor composition according to claim 1 to the insulating substrate and firing the metal. A wiring substrate, characterized in that:
【請求項5】前記絶縁基板が、0〜400℃までの熱膨
張係数が8〜18ppm/℃である請求項4記載の配線
基板。
5. The wiring board according to claim 4, wherein the thermal expansion coefficient of the insulating substrate from 0 to 400 ° C. is 8 to 18 ppm / ° C.
JP21456599A 1999-07-29 1999-07-29 Conductive paste and wiring board using the same Expired - Fee Related JP3643264B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21456599A JP3643264B2 (en) 1999-07-29 1999-07-29 Conductive paste and wiring board using the same

Publications (2)

Publication Number Publication Date
JP2001043730A true JP2001043730A (en) 2001-02-16
JP3643264B2 JP3643264B2 (en) 2005-04-27

Family

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093003A (en) * 2004-09-27 2006-04-06 Kyocera Corp Conductive paste and method of manufacturing circuit board using same
JP2006216363A (en) * 2005-02-03 2006-08-17 Kyocera Corp Conductor composition, wiring substrate using it and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093003A (en) * 2004-09-27 2006-04-06 Kyocera Corp Conductive paste and method of manufacturing circuit board using same
JP2006216363A (en) * 2005-02-03 2006-08-17 Kyocera Corp Conductor composition, wiring substrate using it and its manufacturing method

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