JP2001036182A - Silicon platform for optical module - Google Patents
Silicon platform for optical moduleInfo
- Publication number
- JP2001036182A JP2001036182A JP11209163A JP20916399A JP2001036182A JP 2001036182 A JP2001036182 A JP 2001036182A JP 11209163 A JP11209163 A JP 11209163A JP 20916399 A JP20916399 A JP 20916399A JP 2001036182 A JP2001036182 A JP 2001036182A
- Authority
- JP
- Japan
- Prior art keywords
- optical module
- lead
- dielectric film
- silicon
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4245—Mounting of the opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4244—Mounting of the optical elements
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/491—Disposition
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光デバイス実装用
の光モジュール用シリコンプラットフォームに関し、更
に詳しくは、シリコン基板上に導体配線が施された受発
光素子等の素子を搭載する光モジュール用シリコンプラ
ットフォームに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon platform for an optical module for mounting an optical device, and more specifically, to a silicon for an optical module on which an element such as a light emitting / receiving element having conductor wiring formed on a silicon substrate is mounted. About the platform.
【０００２】[0002]
【従来の技術】光通信システムや光データ通信システム
においては、レーザダイオード等の発光素子を組み込ん
だ光モジュールが用いられる。この光モジュールは、近
年のコンピュータハードウェア、通信ネットワークの発
展に伴い、家庭にまで設置されるなど、小型化、高集積
化、低コスト等の要求が高まっている。2. Description of the Related Art In an optical communication system or an optical data communication system, an optical module incorporating a light emitting element such as a laser diode is used. With the development of computer hardware and communication networks in recent years, demands for miniaturization, high integration, low cost, and the like are increasing, for example, the optical modules are installed in homes.
【０００３】光モジュールの小型化、高集積化、低コス
ト化の要求を実現するための手段の一つとして、必要に
より導体配線が施された基板を使用し、この基板上に受
光素子、発光素子を搭載したものを一部品として構成
し、これをパッケージに組み込んで通信用の光ファイバ
や光導波路部品と接続する方式が、上記の要求に沿うも
のとして開発が進められている。As one of means for realizing demands for downsizing, high integration, and low cost of an optical module, a substrate provided with conductor wiring as necessary is used, and a light receiving element, a light emitting device, Development of a system in which an element is mounted as one component, which is incorporated in a package and connected to a communication optical fiber or an optical waveguide component is being developed as meeting the above requirements.
【０００４】この場合、発光素子、受光素子を搭載する
ための基板としては、シリコン基板が好適である。シリ
コン（Ｓｉ）は品質の安定した素材を安価に入手でき、
放熱性が優れると伴に、加工性に優れているので、受発
光素子を搭載する際の位置決めをするためのアライメン
トマークや、光ファイバーなどとの位置決めをするため
のＶ溝の形成が容易であるなどの利点があるためであ
る。In this case, a silicon substrate is suitable as a substrate on which the light emitting element and the light receiving element are mounted. Silicon (Si) can obtain a stable material at low cost,
Since it has excellent heat dissipation and excellent workability, it is easy to form an alignment mark for positioning when mounting a light receiving and emitting element and a V-groove for positioning with an optical fiber or the like. This is because there are advantages.
【０００５】本発明では、このような目的に用いるシリ
コン基板、あるいは、該シリコン基板上に受発光素子及
び導体配線を搭載し、必要によって位置決めのためのア
ライメントマークやＶ溝を形成したものを、光モジュー
ル用シリコンプラットフォームと呼ぶ。In the present invention, a silicon substrate used for such a purpose, or a device having a light receiving / emitting element and a conductor wiring mounted on the silicon substrate and forming alignment marks and V-grooves for positioning as required, is provided. This is called a silicon platform for optical modules.
【０００６】図５に、光モジュール用シリコンプラット
フォームの概念図を示す。図中の５０５は厚さ１ｍｍの
シリコン基板であり、ＳｉＯ２絶縁層（５０７）を介し
て導体パターン（５０６）が形成されている。発光素子
（５０４）、受光素子（５０１）は、光モジュール用シ
リコンプラットフォーム上に搭載され、ハンダ及びボン
ディングワイヤ（５０２）により、光モジュール用シリ
コンプラットフォーム上の導体パターン（５０６）に接
続されている。図５において、５０８は発光素子（５０
４）または受光素子（５０１）の引き出し配線部、５０
９はポリイミド膜よりなる誘電体膜である。FIG. 5 shows a conceptual diagram of a silicon platform for an optical module. In the figure, reference numeral 505 denotes a silicon substrate having a thickness of 1 mm, on which a conductor pattern (506) is formed via an SiO 2 insulating layer (507). The light emitting element (504) and the light receiving element (501) are mounted on a silicon platform for an optical module, and are connected to a conductor pattern (506) on the silicon platform for an optical module by soldering and bonding wires (502). In FIG. 5, reference numeral 508 denotes a light emitting element (50
4) or lead-out wiring portion of light receiving element (501), 50
9 is a dielectric film made of a polyimide film.
【０００７】上記のように構成された光モジュール用シ
リコンプラットフォームは、図６に示すように必要に応
じてプリアンプＩＣ（６０３）やドライバーＩＣ、外部
接続端子、あるいは、光フェルール（６１３）のような
外部光ファイバ（６１２）との接続構造とともにパッケ
ージされて、双方向通信用の光モジュールとして完成さ
れる。図６において、６０８はグラウンド、６１１はリ
ードフレームである。As shown in FIG. 6, the optical module silicon platform configured as described above may be provided with a preamplifier IC (603), a driver IC, an external connection terminal, or an optical ferrule (613) as necessary. It is packaged together with the connection structure with the external optical fiber (612) to complete the optical module for bidirectional communication. In FIG. 6, 608 is a ground, and 611 is a lead frame.
【０００８】以下、図６において、図５と同一部分には
同一符号を付して詳細な説明は省略する。In FIG. 6, the same parts as those in FIG. 5 are denoted by the same reference numerals, and detailed description thereof will be omitted.
【０００９】また、図６では受発光素子を搭載した双方
向通信用モジュールを例にとったが、図７に示すように
伝送レートの増大を目的として、発光素子、または受光
素子をアレイ（７０１）上に配置した発光素子アレイモ
ジュール、受光素子アレイモジュールも注目されてい
る。FIG. 6 shows an example of a bidirectional communication module equipped with a light receiving / emitting element. However, as shown in FIG. 7, a light emitting element or a light receiving element is arranged in an array (701) for the purpose of increasing the transmission rate. The light emitting element array module and the light receiving element array module arranged above are also attracting attention.
【００１０】以下、図７において、図５と同１部分には
同一符号を付して詳細な説明は省略する。In FIG. 7, the same parts as those in FIG. 5 are denoted by the same reference numerals, and detailed description is omitted.
【００１１】[0011]
【発明が解決しようとする課題】ところで、上記の光モ
ジュール用シリコンプラットフォームは、データの伝送
速度が高速化するにつれ、ボンディングワイヤー（５０
２）や引き出し配線部（５０８）で発生する伝送信号の
劣化が問題となっている。By the way, the silicon platform for the optical module described above requires a bonding wire (50%) as the data transmission speed increases.
2) and deterioration of the transmission signal generated in the lead-out wiring portion (508) is a problem.
【００１２】この伝送信号の劣化をおさえるためには、
ボンディングワイヤー（５０２）を短くして寄生インダ
クタンス成分を抑えること、発光素子（５０１）と引き
出し配線部（５０８）分のインピーダンス整合を取るこ
とが重要となる。In order to suppress the deterioration of the transmission signal,
It is important to reduce the parasitic inductance component by shortening the bonding wire (502) and to achieve impedance matching between the light emitting element (501) and the lead-out wiring portion (508).
【００１３】一般に発光素子（５０１）として用いられ
るレーザダイオードの直列抵抗は５〜１０Ω程度であ
り、発光素子（５０１）側の引き出し配線部（５０８）
分の特性インピーダンスＺｏも５〜１０Ω程度にするこ
とが望ましい。The series resistance of a laser diode generally used as a light emitting element (501) is about 5 to 10Ω, and a lead wiring section (508) on the light emitting element (501) side.
It is desirable that the characteristic impedance Zo also be about 5 to 10Ω.
【００１４】引き出し配線部分のインピーダンス整合を
取るために引き出し配線部分をマイクロストリップライ
ンで形成する場合、たとえば特性インピーダンスＺｏ＝
１０Ωにするためには、配線幅Ｗと配線下の誘電体膜の
厚さＨの比Ｗ／Ｈ＝１６．５となり、誘電体膜厚Ｈに比
べて配線幅Ｗがかなり大きくなってしまう。When the extraction wiring portion is formed by a microstrip line in order to match the impedance of the extraction wiring portion, for example, the characteristic impedance Zo =
In order to make 10Ω, the ratio W / H of the wiring width W to the thickness H of the dielectric film under the wiring becomes 16.5, and the wiring width W becomes considerably larger than the dielectric film thickness H.
【００１５】一方、光モジュールの小型化を図る上で
は、受発光素子を搭載する基板のサイズを小型化するこ
とが好ましい。例えば、現在の光ファイバテープの規格
は光ファイバ間のピッチが２５０μｍであり、現状の光
ファイバーテープとの接続を前提とすれば、発光素子や
受光素子を２５０μｍピッチで配置したアプリケーショ
ンが構成できれば最も理想的である。On the other hand, in order to reduce the size of the optical module, it is preferable to reduce the size of the substrate on which the light receiving and emitting elements are mounted. For example, the standard of the current optical fiber tape is that the pitch between optical fibers is 250 μm, and assuming the connection with the current optical fiber tape, it is most ideal if an application in which light emitting elements and light receiving elements are arranged at a pitch of 250 μm can be configured. It is a target.
【００１６】ここで、隣接チャンネル間のクロストーク
を考慮に入れると、引き出し配線の配線幅Ｗは１００μ
ｍを超えない程度にすることが望ましい。この場合、誘
電体膜の厚さはおおよそ５μｍ以下にする必要がある。Here, taking into account the crosstalk between adjacent channels, the width W of the lead wiring is 100 μm.
m. In this case, the thickness of the dielectric film needs to be approximately 5 μm or less.
【００１７】ところが、誘電体膜の厚さが薄いと、誘電
体膜上に形成した配線にワイヤーをボンディングする際
の衝撃で配線が剥がれてしまうという問題が発生する。
誘電体膜上の配線が剥がれないようにするには、誘電体
膜の厚さが２０〜３０μｍ以上必要に成るという問題が
ある。However, if the thickness of the dielectric film is small, there is a problem that the wiring is peeled off by the impact of bonding the wire to the wiring formed on the dielectric film.
In order to prevent the wiring on the dielectric film from peeling off, there is a problem that the thickness of the dielectric film needs to be 20 to 30 μm or more.
【００１８】本発明は、上記従来の課題を解決するため
になされたものであり、その目的は、高速伝送可能な小
型光モジュールを、低コストに供給することが可能にな
る光モジュール用シリコンプラットフォームを提供する
ことにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide an optical module silicon platform capable of supplying a small optical module capable of high-speed transmission at low cost. Is to provide.
【００１９】[0019]
【課題を解決するための手段】上記目的を達成するため
に、本発明は次のような構成をもって課題を解決する手
段としている。すなわち、本第１の発明の光モジュール
用シリコンプラットフォームは、シリコン基板上に受発
光素子を搭載する光モジュール用シリコンプラットフォ
ームであって、前記シリコン基板上に誘電体膜が形成さ
れ、前記誘電体膜上に前記受発光素子の引き出し配線部
が設けられ、前記引き出し配線部のボンディングパッド
部はシリコン基板上の誘電体膜が除去された状態で形成
されている構成をもって課題を解決する手段としてい
る。Means for Solving the Problems In order to achieve the above object, the present invention has the following structure to solve the problems. That is, the silicon platform for an optical module of the first invention is a silicon platform for an optical module having a light receiving / emitting element mounted on a silicon substrate, wherein a dielectric film is formed on the silicon substrate. A lead wiring portion of the light emitting / receiving element is provided thereon, and a bonding pad portion of the lead wiring portion is formed in a state where a dielectric film on a silicon substrate is removed, thereby providing means for solving the problem.
【００２０】本第１の発明は、配線電極のボンディング
パッド部分の直下の誘電体膜を除去した状態にして、ボ
ンディングパッド部分のみ基板上に形成することによっ
て、ワイヤーボンディング時の剥がれの問題を回避する
ものである。The first aspect of the present invention avoids the problem of peeling during wire bonding by forming only the bonding pad portion on the substrate with the dielectric film immediately below the bonding pad portion of the wiring electrode removed. Is what you do.
【００２１】かかる構成の本第１の発明によれば、受発
光素子の引き出し配線部の配線電極のボンディングパッ
ド以外の部分は、厚さ数μｍ程度の誘電体膜上に形成す
ることができるので、配線幅を１００μｍ以下にして
も、レーザーダイオードの直列抵抗と引き出し配線部分
の特性インピーダンスの整合を取ることができる。According to the first aspect of the present invention, the portions other than the bonding pads of the wiring electrodes of the lead wiring portion of the light receiving / emitting element can be formed on the dielectric film having a thickness of about several μm. Even if the wiring width is set to 100 μm or less, the series resistance of the laser diode can be matched with the characteristic impedance of the lead wiring portion.
【００２２】一方、基板上に形成したボンディングパッ
ド部分は、ワイヤーボンディングする際に衝撃を受けて
も誘電体膜と異なり剥がれることが無いので、引き出し
配線部の損傷がなくなり実装・組み立てが容易となる。On the other hand, the bonding pad portion formed on the substrate does not peel off unlike a dielectric film even when subjected to an impact during wire bonding, so that the lead-out wiring portion is not damaged and mounting and assembly are facilitated. .
【００２３】よって、小型、かつ高集積化した高速伝送
可能な光モジュールが低コストに提供される。Therefore, an optical module that is compact, highly integrated, and capable of high-speed transmission is provided at low cost.
【００２４】また、本第２の発明の光モジュール用シリ
コンプラットフォームは、引き出し配線部分が、マイク
ロストリップライン構造となっている構成をもって課題
を解決する手段としている。Further, the silicon platform for an optical module according to the second aspect of the present invention is a means for solving the problem by having a configuration in which a lead wiring portion has a microstrip line structure.
【００２５】かかる構成の本第２の発明によれば、受発
光素子と引き出し配線部間の特性インピーダンスの整合
をより容易に取ることができる。According to the second aspect of the present invention, it is possible to more easily match the characteristic impedance between the light emitting / receiving element and the lead wiring portion.
【００２６】したがって、より小型、かつ高集積化した
高速伝送可能な光モジュールが低コストに提供される。Therefore, an optical module that is smaller and highly integrated and capable of high-speed transmission is provided at low cost.
【００２７】第１の実施形態例 図１は、本発明に係る第１の実施形態例の光モジュール
用シリコンプラットフォームを用いた光モジュールの一
部を示す模式図である。First Embodiment FIG. 1 is a schematic view showing a part of an optical module using a silicon platform for an optical module according to a first embodiment of the present invention.
【００２８】図１において、１００は光モジュール用シ
リコンプラットフォーム、１０１はレーザーダイオード
アレイである。本実施の形態例では、レーザーダイオー
ドアレイ（１０１）はレーザーダイオードが６個配置さ
れたものである。１０２はレーザーダイオードアレイド
（１０１）を搭載するための、厚さ１ｍｍで比抵抗が２
０００Ωｃｍ、６×３ｍｍのサイズのシリコン基板であ
る。In FIG. 1, reference numeral 100 denotes a silicon platform for an optical module, and 101 denotes a laser diode array. In the present embodiment, the laser diode array (101) includes six laser diodes. Reference numeral 102 denotes a 1 mm thick and specific resistance 2 for mounting the laser diode array (101).
It is a silicon substrate having a size of 000 Ωcm and a size of 6 × 3 mm.
【００２９】シリコン基板（１０２）表面全体にＳｉＯ
２酸化絶縁膜（１０３）が熱酸化法により形成されてい
る。その上に、銅または金よりなる配線パターン（１０
４）およびグラウンド（１０５）が蒸着および、フォト
リソグラフィーを用いた周知のリフトオフ法により所定
の形状に形成されている。その上に更に、厚さ２μｍの
ポリイミド膜よりなる誘電体膜（１０６）が形成されて
いる。The entire surface of the silicon substrate (102) is made of SiO.
A dioxide insulating film (103) is formed by a thermal oxidation method. A copper or gold wiring pattern (10
4) and the ground (105) are formed in a predetermined shape by a known lift-off method using vapor deposition and photolithography. Further thereon, a dielectric film (106) made of a polyimide film having a thickness of 2 μm is formed.
【００３０】ポリイミド膜の形成にあたってポリイミド
を塗布後、引き出し配線部のマイクロストリップライン
を構成する部分を残して、フォトリソグラフィーおよび
ドライエッチングを用いてパターニングした。In forming the polyimide film, after applying the polyimide, patterning was carried out by photolithography and dry etching except for a portion constituting the microstrip line of the lead-out wiring portion.
【００３１】このパターニングで、ボンディングパッド
（１０８）が形成される場所の誘電体膜（１０６）は除
去され、ＳｉＯ２酸化絶縁膜（１０３）が露出される。In this patterning, the dielectric film (106) where the bonding pad (108) is to be formed is removed, and the SiO 2 oxide insulating film (103) is exposed.
【００３２】誘電体膜（１０６）のその上に引き出し配
線（１０７）が蒸着および、フォトリソグラフィーを用
いた周知のリフトオフ法により形成されている。A lead wiring (107) is formed on the dielectric film (106) by vapor deposition and a well-known lift-off method using photolithography.
【００３３】引き出し配線（１０７）はレーザーダイオ
ードアレイ（１０１）の直列抵抗（５Ω）とインピーダ
ンスが整合するように引き出し配線幅を７０μｍと設定
した。引き出し配線（１０７）のボンディングパッド
（１０８）は、上記したように誘電体膜（１０６）が除
去されたＳｉＯ２酸化絶縁膜（１０３）上に形成されて
いる。The width of the lead wire (107) was set to 70 μm so that the impedance matched the series resistance (5Ω) of the laser diode array (101). The bonding pad (108) of the lead wiring (107) is formed on the SiO 2 oxide insulating film (103) from which the dielectric film (106) has been removed as described above.
【００３４】レーザーダイオードアレイ（１０１）は、
配線パターン（１０４）をアライメントマークとして用
いて位置決めし、ハンダにより固定した。その後、レー
ザーダイオードアレイ(１０１)、引き出し配線（１０
７）、ドライバーＩＣ（１１０）間をボンディングワイ
ヤー（１０９）によって接続した。The laser diode array (101)
The positioning was performed using the wiring pattern (104) as an alignment mark, and the wiring pattern (104) was fixed with solder. After that, the laser diode array (101) and the lead wiring (10
7) The driver ICs (110) were connected by bonding wires (109).
【００３５】本実施の形態例では、レーザーダイオード
アレイ（１０１）として、ＩｎＰ基板上にダブルヘテロ
構造のＩｎＧａＡｓＰ活性層による共振器が形成された
公知の端面出射型の発光素子で、発振波長１．３１μ
ｍ、しきい値電流５ｍＡのものを用いた。In the present embodiment, as a laser diode array (101), a known edge-emitting type light-emitting element in which a resonator composed of an InGaAsP active layer having a double hetero structure is formed on an InP substrate has an oscillation wavelength of 1. 31μ
m and a threshold current of 5 mA.
【００３６】レーザーダイオードアレイ（１０１）の光
出射方向は、図１に示す光ファイバ（１１１）と結合す
る方向で、光結合の容易性を考慮して、シリコン基板
（１０２）の端部に設置されている。The light emitting direction of the laser diode array (101) is the direction of coupling with the optical fiber (111) shown in FIG. 1, and is set at the end of the silicon substrate (102) in consideration of the easiness of optical coupling. Have been.
【００３７】なお、実際には、シリコン基板上にＶ溝を
形成し、外部光ファイバとの接続における位置合わせと
し、また、光ファイバ（１１１）との接続を行うための
光フェルールが取り付けられている。In practice, a V-groove is formed on a silicon substrate to adjust the position in connection with an external optical fiber, and an optical ferrule for connecting to an optical fiber (111) is attached. I have.
【００３８】また、シリコン基板（１０２）、ドライバ
ーＩＣ（１１０）はリードフレーム上に設置され、必要
に応じてドライバーＩＣ（１１０）の端子とリードフレ
ームの外部出力端子が接続される。図１では、作図の都
合上、これらの図示は省略した。The silicon substrate (102) and the driver IC (110) are installed on a lead frame, and the terminals of the driver IC (110) and the external output terminals of the lead frame are connected as necessary. In FIG. 1, these illustrations are omitted for convenience of drawing.
【００３９】更に、リードフレームや各端子、あるいは
光フェルールは、光モジュールの強度や信頼性、外部部
品との接続の便宜などを考慮して、材料、形状などの設
計が行われるが、これらは本発明の必須要件を構成する
ものではないので、詳細についての説明は省略する。Further, materials and shapes of the lead frame, each terminal, and the optical ferrule are designed in consideration of the strength and reliability of the optical module, convenience of connection with external components, and the like. Since it does not constitute an essential requirement of the present invention, a detailed description thereof will be omitted.
【００４０】第２の実施形態例 図２は、本発明に係る第２の実施形態例の光モジュール
用シリコンプラットフォームを用いた光モジュールの一
部を示す模式図である。Second Embodiment FIG. 2 is a schematic view showing a part of an optical module using a silicon platform for an optical module according to a second embodiment of the present invention.
【００４１】図２に示す光モジュールでは、光モジュー
ル用シリコンプラットフォーム（１００）とドライバー
ＩＣ（２０２）間に、配線部分として上記の方法でシリ
コン基板（２０３）上にマイクロストリップライン（２
０５）を形成した光モジュール用シリコンプラットフォ
ーム（２０１）を用いている。In the optical module shown in FIG. 2, a microstrip line (2) is formed on a silicon substrate (203) as a wiring portion between the optical module silicon platform (100) and the driver IC (202) by the above-described method.
05) is used.
【００４２】マイクロストリップライン（２０５）はシ
リコン基板（２０３）上に形成されたＳｉＯ２酸化絶縁
膜（２０６）およびＳｉＯ２酸化絶縁膜（２０６）の上
に形成されたポリイミド膜からなる誘電体膜（２０７）
の上に形成されているが、そのボンディングパッド（２
０８）は、上記と同様に誘電体膜（２０７）が除去され
たＳｉＯ２酸化絶縁膜（２０６）上に形成されている。The microstrip line (205) is a dielectric film composed of an SiO 2 oxide insulating film (206) formed on a silicon substrate (203) and a polyimide film formed on the SiO 2 oxide insulating film (206). (207)
Is formed on the bonding pad (2
08) is formed on the SiO 2 oxide insulating film (206) from which the dielectric film (207) has been removed in the same manner as described above.
【００４３】図２において２０９は、ボンディングワイ
アーである。In FIG. 2, reference numeral 209 denotes a bonding wire.
【００４４】図１に示す実施の形態と同様の部分につい
ては詳細な説明は省略する。Detailed description of the same parts as in the embodiment shown in FIG. 1 is omitted.
【００４５】第３の実施形態例 図３に光送受信モジュールに適用した場合の光モジュー
ル用シリコンプラットフォーム（３００）の模式図を示
す。Third Embodiment FIG. 3 is a schematic diagram of an optical module silicon platform (300) when applied to an optical transceiver module.
【００４６】図３において、３０１は発光素子、３０２
は受光素子である。In FIG. 3, reference numeral 301 denotes a light emitting element;
Is a light receiving element.
【００４７】３０３はシリコン基板、３０４はＳＯＢ
（Silicon Opyical Bench ）配線、３０５はＳｉＯ２酸
化絶縁膜である。ＳＯＢ配線（３０４）、グラウンド
（３０７）はＳｉＯ２酸化絶縁膜（３０５）上に形成さ
れている。303 is a silicon substrate, 304 is SOB
(Silicon Opyical Bench) wiring, 305 is a SiO 2 oxide insulating film. The SOB wiring (304) and the ground (307) are formed on the SiO 2 oxide insulating film (305).
【００４８】一方引出し配線（３０８）は、ＳｉＯ２酸
化絶縁膜（３０５）上に形成されている誘電体膜（３０
９）の上に形成されているが、そのボンディングパッド
（３１０）は、上記と同様に誘電体膜（３０９）が除去
されたＳｉＯ２酸化絶縁膜（３０５）上に形成されてい
る。On the other hand, the lead wiring (308) is formed on the dielectric film (30) formed on the SiO 2 oxide insulating film (305).
9), the bonding pad (310) is formed on the SiO 2 oxide insulating film (305) from which the dielectric film (309) has been removed in the same manner as described above.
【００４９】図３において３１１は、ボンディングワイ
アーである。In FIG. 3, reference numeral 311 denotes a bonding wire.
【００５０】図１に示す実施の形態と同様の部分につい
ては詳細な説明は省略する。A detailed description of the same parts as in the embodiment shown in FIG. 1 will be omitted.
【００５１】その他の実施形態例 図４に光送受信モジュールに適用した場合のその他の実
施形態例の光モジュール用シリコンプラットフォーム
（４００）の模式図を示す。Other Embodiments FIG. 4 is a schematic view of an optical module silicon platform (400) of another embodiment when applied to an optical transceiver module.
【００５２】本実施の形態の光モジュール用シリコンプ
ラットフォーム（４００）の特徴は、発光素子（４０
１）および受光素子（４０２）に接続される引き出し配
線（４０８）がボンディングワイヤーを介さずそれぞれ
の素子直下の部分まで延長したことである。The feature of the optical module silicon platform (400) of the present embodiment is that the light emitting element (40)
1) and the lead-out wiring (408) connected to the light receiving element (402) is extended to a portion directly below each element without using a bonding wire.
【００５３】このことにより、上記の実施の形態の光モ
ジュール用シリコンプラットフォームで必要であった引
出し配線（４０８）と発光素子（４０１）および受光素
子（４０２）間のボンディングワイヤーを不要にし、ワ
イヤーの寄生インダクタンスの抑制、製造工程の削減が
可能になることである。This eliminates the need for the bonding wire between the lead-out wiring (408) and the light emitting element (401) and the light receiving element (402), which is required for the optical module silicon platform of the above embodiment. That is, the parasitic inductance can be suppressed and the number of manufacturing steps can be reduced.
【００５４】本実施の形態では、シリコン基板（４０
３）上のＳｉＯ２酸化絶縁膜（４０５）の一部に高さ調
節のために厚膜ＳｉＯ２酸化絶縁膜（４１１）を設けて
いる。In this embodiment, the silicon substrate (40
For height adjustment part 3) on the SiO 2 oxide insulating film (405) is provided with a thick SiO 2 oxide insulating film (411).
【００５５】シリコン基板（４０３）に用いているＳｉ
は通常レザーダイオードの放熱用ヒートシンクを兼ねて
おり、あまりＳｉＯ２酸化絶縁膜（４０５）を厚くする
と放熱性が低下するため、ＳｉＯ２酸化絶縁膜の厚さは
せいぜい５００ｎｍ程度である。Si used for the silicon substrate (403)
Usually also serves as a radiation heat sink for laser diode, to lower the heat dissipation and to increase the much SiO 2 oxide insulating film (405), the thickness of the SiO 2 oxide insulating film is at most about 500 nm.
【００５６】一方、Ｓｉは導電性であるため、Ｓｉ／Ｓ
ｉＯ２上に形成された配線部分には、寄生容量が付加さ
れる。従って、高周波特性を向上するためには、ＳｉＯ
２は厚いほうがよい。On the other hand, since Si is conductive, Si / S
Parasitic capacitance is added to the wiring portion formed on iO 2 . Therefore, in order to improve the high frequency characteristics, it is necessary to use SiO 2
2 should be thicker.
【００５７】本実施の形態例では、ＳｉＯ２を熱ＣＶＤ
法でシリコン基板全面に２μｍ成膜し、リソグラフィに
よるパターニングとエッチングによって、ボンディング
パッド（４０９）直下と引き出し配線部の厚膜ＳｉＯ２
酸化絶縁膜（４１１）直下以外のＳｉＯ２酸化絶縁膜部
分を５００ｎｍまで薄くした。これによって、放熱性を
損なわずに、寄生容量による高周波特性の劣化を防ぐこ
とができる。In the present embodiment, SiO 2 is formed by thermal CVD.
A 2 μm film is formed on the entire surface of the silicon substrate by the lithography method, and a thick film SiO 2 just under the bonding pad (409) and the lead-out wiring portion is formed by patterning and etching by lithography.
The portion of the SiO 2 oxide insulating film other than immediately below the oxide insulating film (411) was thinned to 500 nm. As a result, it is possible to prevent high-frequency characteristics from deteriorating due to parasitic capacitance without impairing heat dissipation.
【００５８】図１に示す実施の形態と同様の部分につい
ては詳細な説明は省略する。Detailed description of the same parts as in the embodiment shown in FIG. 1 is omitted.
【００５９】また、上記の実施の形態では、光素子と外
部の光ファイバを直接結合させる光モジュールを中心に
説明したが、シリコン基板上に受光素子、発光素子と伴
に、平面導波路（ＰＬＣ）を搭載し、該導波路を介して
光ファイバとの結合を行う光モジュールなど、各種の光
モジュールに適用することができることは当然である。In the above embodiment, the optical module for directly coupling an optical element and an external optical fiber has been mainly described. However, a planar waveguide (PLC) is provided on a silicon substrate together with a light receiving element and a light emitting element. ) Can be naturally applied to various optical modules such as an optical module that couples to an optical fiber via the waveguide.
【００６０】なお、本発明は、上記した実施の形態に限
定されるものではなく、例えば、光モジュール用シリコ
ンプラットフォームは光ファイバとの接続を容易にする
ためにリードフレームの端部に設置される。一方、ドラ
イバーＩＣ、リードフレームのピン配置によってはリー
ドフレームの後方に配置したほうが望ましい場合もあり
うる。The present invention is not limited to the above-described embodiment. For example, a silicon platform for an optical module is installed at an end of a lead frame to facilitate connection with an optical fiber. . On the other hand, depending on the driver IC and the pin arrangement of the lead frame, it may be desirable to arrange it behind the lead frame.
【００６１】[0061]
【発明の効果】以上説明したように、本発明の光モジュ
ール用シリコンプラットフォームによれば、発光素子と
引き出し配線間のインピーダンス整合を可能にし、高速
伝送可能な小型光モジュールを、低コストに提供され
る。As described above, according to the silicon platform for an optical module of the present invention, it is possible to provide a small-sized optical module capable of high-speed transmission by enabling impedance matching between a light emitting element and a lead wiring at low cost. You.
【００６２】即ち、本第１の発明によれば、受発光素子
の引き出し配線部の配線電極のボンディングパッド以外
の部分は、厚さ数μｍ程度の誘電体膜上に形成すること
ができるので、配線幅を１００μｍ以下にしても、レー
ザーダイオードの直列抵抗と引き出し配線部分の特性イ
ンピーダンスの整合を取ることができる。That is, according to the first aspect of the present invention, the portions other than the bonding pads of the wiring electrodes of the lead wiring portion of the light emitting / receiving element can be formed on the dielectric film having a thickness of about several μm. Even if the wiring width is 100 μm or less, matching between the series resistance of the laser diode and the characteristic impedance of the lead-out wiring portion can be achieved.
【００６３】一方、基板上に形成したボンディングパッ
ド部分は、ワイヤーボンディングする際に衝撃を受けて
も誘電体膜と異なり剥がれることが無いので、引き出し
配線部の損傷がなくなり実装・組み立てが容易となる。On the other hand, the bonding pad portion formed on the substrate does not peel off unlike a dielectric film even when subjected to an impact during wire bonding, so that the lead-out wiring portion is not damaged and mounting and assembly are facilitated. .
【００６４】よって、小型、かつ高集積化した高速伝送
可能な光モジュールが低コストに提供される。Accordingly, an optical module that is compact, highly integrated, and capable of high-speed transmission is provided at low cost.
【００６５】また、本第２の発明の光モジュール用シリ
コンプラットフォームによれば、引き出し配線部分が、
マイクロストリップライン構造となっているので、受発
光素子と引き出し配線部間の特性インピーダンスの整合
をより容易に取ることができる。According to the silicon platform for an optical module of the second aspect of the present invention,
Because of the microstrip line structure, matching of the characteristic impedance between the light emitting / receiving element and the lead-out wiring portion can be more easily achieved.
【００６６】したがって、より小型、かつ高集積化した
高速伝送可能な光モジュールが低コストに提供される。Therefore, an optical module which is smaller, highly integrated, and capable of high-speed transmission is provided at low cost.
【図１】本発明に係る光モジュール用シリコンプラット
フォームの第１の実施形態を示す説明図で、（ａ）は断
面図、（ｂ）は平面図である。FIG. 1 is an explanatory view showing a first embodiment of a silicon platform for an optical module according to the present invention, wherein (a) is a cross-sectional view and (b) is a plan view.
【図２】本発明に係る光モジュール用シリコンプラット
フォームの第２の実施形態を示す説明図で、（ａ）は断
面図、（ｂ）は平面図である。FIGS. 2A and 2B are explanatory views showing a second embodiment of the silicon platform for an optical module according to the present invention, wherein FIG. 2A is a cross-sectional view and FIG.
【図３】本発明に係る光モジュール用シリコンプラット
フォームの第３の実施形態を示す説明図で、（ａ）は断
面図、（ｂ）は平面図である。3A and 3B are explanatory views showing a third embodiment of the silicon platform for an optical module according to the present invention, wherein FIG. 3A is a cross-sectional view and FIG. 3B is a plan view.
【図４】本発明に係る光モジュール用シリコンプラット
フォームのその他の実施形態を示す説明図で、（ａ）は
断面図、（ｂ）は平面図である。4A and 4B are explanatory views showing another embodiment of the silicon platform for an optical module according to the present invention, wherein FIG. 4A is a cross-sectional view and FIG. 4B is a plan view.
【図５】本発明に係る光モジュール用シリコンプラット
フォームの概念を示す説明図である。FIG. 5 is an explanatory view showing the concept of a silicon platform for an optical module according to the present invention.
【図６】本発明に係る光モジュール用シリコンプラット
フォームを使用した光送受信モジュールの概念を示す説
明図である。FIG. 6 is an explanatory view showing the concept of an optical transceiver module using a silicon platform for an optical module according to the present invention.
【図７】本発明に係る光モジュール用シリコンプラット
フォームを使用した発光素子アレイモジュールの概念を
示す説明図である。FIG. 7 is an explanatory view showing the concept of a light emitting element array module using a silicon platform for an optical module according to the present invention.
１００ 光モジュール用シリコンプラットフォーム １０１ レーザーダイオードアレイ １０２ シリコン基板 １０３ ＳｉＯ２酸化絶縁膜 １０６ 誘電体膜 １０７ 引き出し配線 １０８ ボンディングパッド １０９ ボンディングワイヤーREFERENCE SIGNS LIST 100 silicon platform for optical module 101 laser diode array 102 silicon substrate 103 SiO 2 oxide insulating film 106 dielectric film 107 lead-out wiring 108 bonding pad 109 bonding wire
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5F073 AB05 AB28 BA02 CA12 EA14 FA07 FA13 FA18 5F088 BA02 BA15 BB01 FA05 GA03 JA03 LA01 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F073 AB05 AB28 BA02 CA12 EA14 FA07 FA13 FA18 5F088 BA02 BA15 BB01 FA05 GA03 JA03 LA01
Claims (2)
光モジュール用シリコンプラットフォームであって、前
記シリコン基板上に誘電体膜が形成され、前記誘電体膜
上に前記受発光素子の引き出し配線部が設けられ、前記
引き出し配線部のボンディングパッド部はシリコン基板
上の誘電体膜が除去された状態で形成されていることを
特徴とする光モジュール用シリコンプラットフォーム。1. A silicon platform for an optical module, on which a light emitting / receiving element is mounted on a silicon substrate, wherein a dielectric film is formed on the silicon substrate, and a lead-out wiring part of the light emitting / receiving element on the dielectric film. Wherein the bonding pad portion of the lead-out wiring portion is formed in a state where the dielectric film on the silicon substrate is removed.
リップライン構造となっていることを特徴とする請求項
１記載の光モジュール用シリコンプラットフォーム。2. The silicon platform for an optical module according to claim 1, wherein the lead wiring portion has a microstrip line structure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20916399A JP3434473B2 (en) | 1999-07-23 | 1999-07-23 | Silicon platform for optical module |
| CA002331970A CA2331970A1 (en) | 1999-07-23 | 2001-01-19 | Silicon platform for optical modules |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20916399A JP3434473B2 (en) | 1999-07-23 | 1999-07-23 | Silicon platform for optical module |
| CA002331970A CA2331970A1 (en) | 1999-07-23 | 2001-01-19 | Silicon platform for optical modules |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001036182A true JP2001036182A (en) | 2001-02-09 |
| JP3434473B2 JP3434473B2 (en) | 2003-08-11 |
Family
ID=25682346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20916399A Expired - Fee Related JP3434473B2 (en) | 1999-07-23 | 1999-07-23 | Silicon platform for optical module |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3434473B2 (en) |
| CA (1) | CA2331970A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6934448B2 (en) | 2001-12-27 | 2005-08-23 | Hitachi, Ltd. | Optical element-mounting substrate and method of producing the same |
| US7355862B2 (en) | 2003-03-11 | 2008-04-08 | The Furukawa Electric Co., Ltd. | Printed wiring board, method of manufacturing the printed wiring board, lead frame package, and optical module |
| JP2010157763A (en) * | 2010-03-11 | 2010-07-15 | Sanyo Electric Co Ltd | Semiconductor laser apparatus, optical pickup apparatus and optical recording medium driving apparatus |
| JP2014036100A (en) * | 2012-08-08 | 2014-02-24 | Furukawa Electric Co Ltd:The | Optical module |
| US8923659B2 (en) | 2012-03-19 | 2014-12-30 | Fujitsu Limited | Optical switching apparatus and method |
| CN107658691A (en) * | 2016-07-26 | 2018-02-02 | 新光电气工业株式会社 | Optical semiconductor device |
| JP2019036624A (en) * | 2017-08-15 | 2019-03-07 | 日本電信電話株式会社 | Optical device |
-
1999
- 1999-07-23 JP JP20916399A patent/JP3434473B2/en not_active Expired - Fee Related
-
2001
- 2001-01-19 CA CA002331970A patent/CA2331970A1/en not_active Abandoned
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6934448B2 (en) | 2001-12-27 | 2005-08-23 | Hitachi, Ltd. | Optical element-mounting substrate and method of producing the same |
| US7355862B2 (en) | 2003-03-11 | 2008-04-08 | The Furukawa Electric Co., Ltd. | Printed wiring board, method of manufacturing the printed wiring board, lead frame package, and optical module |
| CN100440500C (en) * | 2003-03-11 | 2008-12-03 | 古河电气工业株式会社 | Printed wiring board, method for manufacturing same, lead frame package and optical module |
| US7832092B2 (en) | 2003-03-11 | 2010-11-16 | The Furukawa Electric Co., Ltd. | Method of manufacturing a printed wiring board lead frame package |
| JP2010157763A (en) * | 2010-03-11 | 2010-07-15 | Sanyo Electric Co Ltd | Semiconductor laser apparatus, optical pickup apparatus and optical recording medium driving apparatus |
| US8923659B2 (en) | 2012-03-19 | 2014-12-30 | Fujitsu Limited | Optical switching apparatus and method |
| JP2014036100A (en) * | 2012-08-08 | 2014-02-24 | Furukawa Electric Co Ltd:The | Optical module |
| CN107658691A (en) * | 2016-07-26 | 2018-02-02 | 新光电气工业株式会社 | Optical semiconductor device |
| CN107658691B (en) * | 2016-07-26 | 2021-08-10 | 新光电气工业株式会社 | Optical semiconductor device |
| JP2019036624A (en) * | 2017-08-15 | 2019-03-07 | 日本電信電話株式会社 | Optical device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3434473B2 (en) | 2003-08-11 |
| CA2331970A1 (en) | 2002-07-19 |
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