JP2001035814A - Method of forming silver wiring pattern - Google Patents
Method of forming silver wiring patternInfo
- Publication number
- JP2001035814A JP2001035814A JP11207578A JP20757899A JP2001035814A JP 2001035814 A JP2001035814 A JP 2001035814A JP 11207578 A JP11207578 A JP 11207578A JP 20757899 A JP20757899 A JP 20757899A JP 2001035814 A JP2001035814 A JP 2001035814A
- Authority
- JP
- Japan
- Prior art keywords
- silver
- semiconductor substrate
- organic solvent
- wiring pattern
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＬＳＩ基板などの
半導体基板上に銀（Ａｇ）薄膜を形成する方法に関し、
特に銀（Ａｇ）超微粒子独立分散液を利用して半導体基
板上に銀（Ａｇ）薄膜を形成する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a silver (Ag) thin film on a semiconductor substrate such as an LSI substrate.
In particular, the present invention relates to a method for forming a silver (Ag) thin film on a semiconductor substrate by using a silver (Ag) ultrafine particle independent dispersion liquid.
【０００２】[0002]
【従来の技術】最近の半導体産業におけるＬＳＩの高集
積化及び高速化により、半導体基板の配線の微細化と多
層化が進み、配線ピッチが狭まることによって配線間容
量や配線抵抗による信号遅延の問題が生じている。これ
を避けるために、抵抗率の低い配線材料と誘電率の低い
層間絶縁膜を用いる必要に迫られ、配線材料として、従
来のＡｌ合金等の代わりに電気抵抗率の低いかつエレク
トロマイグレーション（ＥＭ）耐性のあるＣｕを使用す
る動きが活発になってきている。しかし、一方で最も低
い電気抵抗率を持つ銀（Ａｇ）を多層配線に使用し、Ａ
ｌ薄膜形成に使用されてきたプロセスをそのまま転用す
ることによってコスト低減をはかることが検討されてい
る。2. Description of the Related Art In recent years, in the semiconductor industry, high integration and high speed of LSI have led to finer wiring and multi-layering of semiconductor substrates, and the wiring pitch has become narrower, resulting in a problem of signal delay due to capacitance between wiring and wiring resistance. Has occurred. In order to avoid this, it is necessary to use a wiring material having a low resistivity and an interlayer insulating film having a low dielectric constant. As a wiring material, instead of a conventional Al alloy or the like, an electromigration (EM) having a low electric resistivity is used. There is a growing movement to use resistant Cu. However, on the other hand, silver (Ag) having the lowest electric resistivity is used for the multilayer wiring, and A
It has been studied to reduce the cost by diverting the process used for forming the thin film as it is.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、かかる
従来技術の銅（Ｃｕ）配線の形成法においては、銅が酸
化しやすいという問題があり、さらに、電気抵抗値は温
度に依存し、プロセス作動温度においては抵抗値が上昇
してしまうという問題があった。However, in such a conventional method of forming a copper (Cu) wiring, there is a problem that copper is easily oxidized, and furthermore, an electric resistance value depends on a temperature, and a process operating temperature. Has a problem that the resistance value increases.
【０００４】本発明は、このような従来の技術の問題点
を解決するためになされたものであり、酸化耐性がよ
く、電気抵抗値が低く、パラジウム（Ｐｄ）等のドープ
によりＥＭ耐性向上ができる銀配線材料を用いて低プロ
セスコストで銀配線パターを形成しうる方法を提供する
ことを課題としている。The present invention has been made in order to solve such problems of the conventional technology, and has a good oxidation resistance, a low electric resistance value, and an improvement in EM resistance by doping with palladium (Pd) or the like. It is an object of the present invention to provide a method capable of forming a silver wiring pattern at a low process cost using a silver wiring material that can be used.
【０００５】[0005]
【課題を解決するための手段】本発明の銀配線パターン
の形成法は、室温で蒸発し難くかつ半導体基板上に銀配
線を形成する際の乾燥・焼成工程で蒸発するような有機
溶媒と、粒径０．００１〜０．１μｍの銀又は酸化銀超
微粒子とを混合して形成され、該超微粒子の表面が該有
機溶媒で覆われて個々に独立して分散しており、粘度が
室温で１０００ｃＰ以下である銀超微粒子独立分散液を
半導体基板上へ塗布し、加熱して前記有機溶媒を蒸発さ
せ、焼成することによって前記超微粒子を融着させ、半
導体基板上に厚さ２μｍ以下の銀膜を形成し、その後不
用部分をエッチング処理して取り除き、半導体基板上に
銀配線パターンを形成することからなる。前記焼成にお
いて、焼成温度は、１５０〜５００℃が望ましく、１５
０℃未満だと有機溶媒が十分に乾燥除去されず、５００
℃を超えると半導体素子に熱的ダメージを与えるという
問題がある。The method for forming a silver wiring pattern according to the present invention comprises: an organic solvent which hardly evaporates at room temperature and which evaporates in a drying / firing step when forming silver wiring on a semiconductor substrate; It is formed by mixing silver or silver oxide ultrafine particles having a particle size of 0.001 to 0.1 μm, and the surface of the ultrafine particles is covered with the organic solvent and dispersed independently, and the viscosity is room temperature. Is coated on a semiconductor substrate with a silver ultrafine particle independent dispersion liquid of 1000 cP or less, and the organic solvent is evaporated by heating, followed by baking to fuse the ultrafine particles to a thickness of 2 μm or less on the semiconductor substrate. After forming a silver film, unnecessary portions are removed by etching, and a silver wiring pattern is formed on the semiconductor substrate. In the firing, the firing temperature is preferably 150 to 500 ° C.
When the temperature is lower than 0 ° C., the organic solvent is not sufficiently dried and removed, and 500
If the temperature exceeds ℃, there is a problem that a semiconductor element is thermally damaged.
【０００６】前記銀超微粒子独立分散液には、金、銅、
アルミニウム、マグネシウム、スカンジウム、インジウ
ム、亜鉛、ニッケル、パラジウム、白金、コバルト、ロ
ジウム、イリジウム、鉄、ルテニウム、オスミウム、ク
ロム、タングステン、タンタル、チタン、ニオブ、ビス
マス、鉛、ホウ素、ケイ素、スズ、バリウムから選ばれ
た少なくとも一種の金属、または該金属を含む化合物の
少なくとも一種を添加してもよい。また、前記有機溶媒
としては、ミネラルスピリット、トリデカン、ドデシル
ベンゼン若しくはそれらの混合物、又はそれらにα−テ
ルピネオール又は炭素数５以上の炭化水素、アルコー
ル、エーテル、エステル、有機窒素化合物、有機ケイ素
化合物、有機イオウ化合物を混合したものが用いられ
る。前記銀超微粒子独立分散液の塗布方法としてはスピ
ンコータ、浸漬、スプレー等の手段が適用される。[0006] The silver ultrafine particle independent dispersion liquid includes gold, copper,
From aluminum, magnesium, scandium, indium, zinc, nickel, palladium, platinum, cobalt, rhodium, iridium, iron, ruthenium, osmium, chromium, tungsten, tantalum, titanium, niobium, bismuth, lead, boron, silicon, tin, barium At least one selected metal or at least one compound containing the metal may be added. Examples of the organic solvent include mineral spirit, tridecane, dodecylbenzene or a mixture thereof, or α-terpineol or a hydrocarbon having 5 or more carbon atoms, an alcohol, an ether, an ester, an organic nitrogen compound, an organosilicon compound, or an organic solvent. A mixture of sulfur compounds is used. As a method for applying the silver ultrafine particle independent dispersion, means such as a spin coater, dipping, and spraying are applied.
【０００７】本発明の銀配線パターンの形成法では、そ
の前処理として、基板表面に、スパッタ法又はＣＶＤ法
によりＴｉＮ，Ｔａ、ＴａＮ、ＷＮ等のバリヤ膜を形成
してもよい。In the method of forming a silver wiring pattern according to the present invention, as a pretreatment, a barrier film of TiN, Ta, TaN, WN or the like may be formed on the substrate surface by sputtering or CVD.
【０００８】前記銀又は酸化銀超微粒子の濃度は、５〜
７０ｗｔ％、好ましくは１５〜５０ｗｔ％である。ま
た、前記銀超微粒子独立分散液は、銀又は酸化銀超微粒
子以外に、銀のエレクトロマイグレーション（ＥＭ）耐
性を向上させる金属又はこれらの金属を含む化合物を少
なくとも一種含有していてもよい。この銀又は酸化銀超
微粒子以外の金属の具体的な例としては、例えばパラジ
ウム、チタン等が挙げられる。さらに、前記銀超微粒子
独立分散液は、銀又は酸化銀超微粒子以外に、銀への溶
解度が低く、かつ半導体基板の絶縁層構成材料と反応し
やすい金属又はこれらの金属を含む化合物を少なくとも
一種含有していてもよく、この金属元素が基材との界面
に析出することにより基材との接着性が向上されたり、
バリア膜なしでも絶縁層であるＳｉＯ2中への銀原子の
拡散が防止されうる。この銀又は酸化銀超微粒子以外の
具体的な例としては、例えば、金、銅、アルミニウム、
マグネシウム、スカンジウム、インジウム、亜鉛、ニッ
ケル、白金、コバルト、ロジウム、イリジウム、バナジ
ウム、鉄、ルテニウム、オスミウム、クロム、タングス
テン、タンタル、ニオブ、ビスマス、鉛、ホウ素、ケイ
素、スズ、バリウムから選ばれる金属又はこれら金属を
含む化合物が挙げられる。本発明で用いる銀超微粒子独
立分散液の粘度は１０００ｃＰ以下、好ましくは１００
ｃＰ以下であれば、銀超微粒子は、該銀超微粒子独立分
散液の形態で、半導体基板上の基板表面に平坦な液膜を
形成する。そして、所定の温度・時間で加熱することに
より、該分散液の有機溶媒が蒸発され、銀等の金属超微
粒子同士が融着し、半導体基板に銀の薄膜が形成され
る。また、かかる分散液を適用する銀薄膜の形成法では
ほとんど金属原料のロスもなく、真空装置を必要としな
い。The concentration of the silver or silver oxide ultrafine particles is 5 to
70 wt%, preferably 15 to 50 wt%. Further, the silver ultrafine particle independent dispersion liquid may contain at least one kind of metal or a compound containing such a metal, which improves the electromigration (EM) resistance of silver, in addition to silver or silver oxide ultrafine particles. Specific examples of the metal other than the silver or silver oxide ultrafine particles include palladium and titanium. Further, the silver ultrafine particle independent dispersion liquid, besides silver or silver oxide ultrafine particles, has a low solubility in silver, and at least one kind of a metal or a compound containing these metals that easily reacts with the insulating layer constituting material of the semiconductor substrate. May be contained, or the adhesion of the metal element to the substrate is improved by precipitation at the interface with the substrate,
Even without a barrier film, diffusion of silver atoms into SiO 2 as an insulating layer can be prevented. Specific examples other than the silver or silver oxide ultrafine particles include, for example, gold, copper, aluminum,
Metals selected from magnesium, scandium, indium, zinc, nickel, platinum, cobalt, rhodium, iridium, vanadium, iron, ruthenium, osmium, chromium, tungsten, tantalum, niobium, bismuth, lead, boron, silicon, tin, barium or Compounds containing these metals are mentioned. The viscosity of the silver ultrafine particle independent dispersion used in the present invention is 1000 cP or less, preferably 100 cP or less.
If it is cP or less, the ultrafine silver particles form a flat liquid film on the substrate surface on the semiconductor substrate in the form of the ultrafine silver particle independent dispersion. Then, by heating at a predetermined temperature and time, the organic solvent of the dispersion liquid is evaporated, and ultrafine metal particles of silver or the like are fused together to form a silver thin film on the semiconductor substrate. In addition, in the method of forming a silver thin film using such a dispersion, there is almost no loss of a metal raw material, and a vacuum device is not required.
【０００９】[0009]
【実施例】以下、本発明の実施例を説明する。 （実施例１）ヘリウム圧力０．５Ｔｏｒｒの条件下で銀
を蒸発させ、ガス中蒸発法により銀の超微粒子を生成す
る際に、生成過程の銀超微粒子にα−テルピネオールの
蒸気を接触させて冷却回収し、α−テルピネオール溶媒
中に独立した状態で分散している平均粒子径０．００８
μｍの銀超微粒子を２０ｗｔ％含有する銀超微粒子独立
分散液を作製した。この分散液は粘度が室温で１００ｃ
Ｐ、１５０℃で３ｃＰであった。Embodiments of the present invention will be described below. (Example 1) When silver is evaporated under a condition of a helium pressure of 0.5 Torr and silver ultrafine particles are produced by a gas evaporation method, a vapor of α-terpineol is brought into contact with the ultrafine silver particles in the production process. An average particle size of 0.008, which is collected by cooling and independently dispersed in an α-terpineol solvent.
A silver ultrafine particle independent dispersion containing 20 wt% of ultrafine silver particles of 20 μm was prepared. This dispersion has a viscosity of 100 c at room temperature.
P was 3 cP at 150 ° C.
【００１０】同様の手法を用いてパラジウム超微粒子独
立分散液を作製し、このパラジウム超微粒子独立分散液
を上記分散液と混合し、パラジウムが１．０ｗｔ％を占
めるように銀・パラジウム混合液を作製した。A palladium ultrafine particle independent dispersion is prepared using the same method, and this palladium ultrafine particle independent dispersion is mixed with the above dispersion, and a silver / palladium mixed solution is prepared so that palladium occupies 1.0 wt%. Produced.
【００１１】次いで、既に半導体素子が形成され、上部
配線とのコンタクトのためにＷ（タングステン）ビアが
形成されたＳｉ基板を用意した。このＳｉ基板のビアの
部分を除いた他の部分には、絶縁膜としてのＳｉＯ2膜
とその上に厚さ０．０２μｍのＷＮバリア膜が形成され
ている。Next, a Si substrate having a semiconductor element formed thereon and a W (tungsten) via formed for contact with an upper wiring was prepared. Except for the via portion of the Si substrate, an SiO 2 film as an insulating film and a 0.02 μm-thick WN barrier film are formed on the SiO 2 film as an insulating film.
【００１２】上記の基板をスピンコータにセットして５
００ｒｐｍで回転させ、その上方から加熱した状態の上
記銀・パラジウム超微粒子独立分散液を滴下することに
よって、スピンコーティングした。５０℃以上に加熱し
た状態でスピンコーティングすることにより、基板の表
面には平坦な該分散液の液膜が形成された。この状態の
基板を大気中、２５０℃の温度で、２分間加熱して有機
溶媒を蒸発させ、次いで温度を３００℃に上げて、１０
分間焼成した。かくして、銀・パラジウム超微粒子が相
互に融着して、割れのない厚さ１μｍの銀・パラジウム
合金薄膜が形成された。The above substrate is set on a spin coater and
By spinning at 00 rpm, the above-mentioned silver / palladium ultrafine particle independent dispersion in a heated state was dropped from above, thereby performing spin coating. By performing spin coating while heating to 50 ° C. or higher, a flat liquid film of the dispersion was formed on the surface of the substrate. The substrate in this state is heated in air at 250 ° C. for 2 minutes to evaporate the organic solvent, and then the temperature is raised to 300 ° C.
Bake for a minute. Thus, the silver / palladium ultrafine particles were fused together to form a 1 μm thick silver / palladium alloy thin film without cracks.
【００１３】その上にフォトレジスト膜をコーティング
し、銀・パラジウム膜をエッチングにより取り除きたい
部分以外を残すようにフォトレジスト膜のパターニング
処理を行った。この基板を真空チャンバー内にセット
し、チャンバー内を真空排気した後に、酸素と塩素とか
らなる混合ガス（１０-4Ｔｏｒｒ）を導入し、高周波プ
ラズマ処理を施して不用部分の銀・パラジウム膜を除去
し、さらに銀・パラジウム膜上に残ったフォトレジスト
を取り除き、Ｗビア上に幅０．１５μｍの銀配線を形成
した。得られた薄膜はＥＭ耐性が向上し、その比抵抗値
は１．８７μΩｃｍであった。 （実施例２）実施例１における銀超微粒子独立分散液の
代わりに、ヘリウムガス中に０．０１ＴｏｒｒのＯ2 ガ
スを混合した雰囲気中で銀を蒸発させ、有機溶媒にミネ
ラルスピリットを用いて粒子径０．０１μｍの酸化銀
（Ａｇ2Ｏ）超微粒子独立分散液を作製した。この分散
液の粘度は室温で５０ｃＰであった。A photoresist film was coated thereon, and the photoresist film was subjected to a patterning process so as to leave a portion other than a portion where the silver / palladium film was to be removed by etching. This substrate was set in a vacuum chamber, and after evacuation of the chamber, a mixed gas (10 -4 Torr) containing oxygen and chlorine was introduced, and high-frequency plasma treatment was performed to remove unnecessary silver / palladium films. Then, the photoresist remaining on the silver / palladium film was removed, and a silver wiring having a width of 0.15 μm was formed on the W via. The EM resistance of the obtained thin film was improved, and the specific resistance value was 1.87 μΩcm. Instead of (Example 2) Silver in Example 1 ultrafine particles independently dispersed liquid silver was evaporated in an atmosphere of a mixture of O 2 gas 0.01Torr in helium gas, with mineral spirits in an organic solvent particles A silver oxide (Ag 2 O) ultrafine particle independent dispersion having a diameter of 0.01 μm was prepared. The viscosity of this dispersion was 50 cP at room temperature.
【００１４】同様の手法を用いてパラジウム超微粒子独
立分散液を作製し、このパラジウム超微粒子独立分散液
を上記分散液と混合し、パラジウムが１．０ｗｔ％を占
めるように酸化銀・パラジウム混合液を作製した。Using the same method, a palladium ultrafine particle independent dispersion is prepared, and this palladium ultrafine particle independent dispersion is mixed with the above dispersion, and a silver oxide / palladium mixed liquid is prepared so that palladium accounts for 1.0 wt%. Was prepared.
【００１５】次いで、上記分散液を用いて、実施例１と
同様であるが、分散液を加熱せずに銀・パラジウム膜を
形成したところ、得られた薄膜は、焼結後も縮や割れが
生じることもなく、その比抵抗は１．８７μΩｃｍであ
った。 （実施例３）実施例１における銀超微粒子独立分散液の
代わりに、有機溶媒としてトリデカンを用いて作製した
銀超微粒子独立分散液にマグネシウムの有機化合物の添
加されたものを、実施例１と同様にして作製した。得ら
れた分散液の粘度は室温で３０ｃＰであった。Next, a silver / palladium film was formed in the same manner as in Example 1 except that the dispersion was not heated, and the obtained thin film was shrunk and cracked even after sintering. Did not occur, and its specific resistance was 1.87 μΩcm. (Example 3) Instead of the silver ultrafine particle independent dispersion liquid in Example 1, a silver ultrafine particle independent dispersion liquid prepared by using tridecane as an organic solvent and an organic compound of magnesium was added to Example 1 was used. It was produced in the same manner. The viscosity of the resulting dispersion was 30 cP at room temperature.
【００１６】次いで、これらの分散液を用いて、ＷＮバ
リア膜を形成する工程を省き、他は実施例１と同様にし
て基板上に銀膜を形成したところ、得られた薄膜は、基
板との密着性も良好であり、絶縁膜であるＳｉＯ2中へ
の銀原子の拡散もなく、その比抵抗は１．９３μΩｃｍ
であった。 （実施例４）実施例１のα−テルピネオールにミネラル
スピリットを混合した溶媒中に分散させた室温で５０ｃ
Ｐの銀超微粒子独立分散液を作製し、これを用いて実施
例１と同様にして、基板上に銀膜を形成し、エッチング
により配線パターンを形成した。得られた薄膜の比抵抗
は１．８７μΩｃｍであった。Next, a step of forming a WN barrier film using these dispersions was omitted, and a silver film was formed on the substrate in the same manner as in Example 1 except that the obtained thin film was Has good adhesion, no diffusion of silver atoms into the insulating film SiO 2 , and a specific resistance of 1.93 μΩcm.
Met. (Example 4) 50 c at room temperature dispersed in a solvent obtained by mixing the mineral spirit with α-terpineol of Example 1
A silver ultrafine particle independent dispersion of P was prepared, and a silver film was formed on a substrate in the same manner as in Example 1 using this, and a wiring pattern was formed by etching. The specific resistance of the obtained thin film was 1.87 μΩcm.
【００１７】[0017]
【発明の効果】本発明の銀配線パターンの形成法によれ
ば、ＬＳＩ基板上にＬＳＩの動作温度（１５０℃）にお
いて他の材料に比べ、より低い抵抗値をもち、ＥＭ耐性
に優れた導電性の均一な微細パターンを形成することが
できる。そして、配線抵抗による信号遅延を低減し、Ｌ
ＳＩの高集積化及び高速化をはかることができる。According to the method for forming a silver wiring pattern of the present invention, a conductive material having a lower resistance value and an excellent EM resistance at a working temperature (150 ° C.) of an LSI on an LSI substrate as compared with other materials. A fine pattern with uniform properties can be formed. Then, signal delay due to wiring resistance is reduced, and L
High integration and high speed of the SI can be achieved.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山川 洋幸 茨城県つくば市東光台５−９−７ 日本真 空技術株式会社筑波超材料研究所内 (72)発明者 村上 裕彦 茨城県つくば市東光台５−９−７ 日本真 空技術株式会社筑波超材料研究所内 Ｆターム(参考） 4K044 AA11 BA08 BA12 BA21 BB01 BB10 CA22 CA24 CA27 CA53 CA62 CA64 4M104 BB08 BB39 DD51 HH01 HH16 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Hiroyuki Yamakawa 5-9-7 Tokodai, Tsukuba, Ibaraki Japan Inside Tsukuba Super Materials Research Laboratory, Japan Vapor Technology Co., Ltd. (72) Inventor Hirohiko Murakami 5 Tokodai, Tsukuba, Ibaraki -9-7 F-term in Tsukuba Super Materials Research Laboratory, Japan Vacuum Engineering Co., Ltd. (Reference) 4K044 AA11 BA08 BA12 BA21 BB01 BB10 CA22 CA24 CA27 CA53 CA62 CA64 4M104 BB08 BB39 DD51 HH01 HH16
Claims (4)
配線を形成する際の乾燥・焼成工程で蒸発するような有
機溶媒と、粒径０．００１〜０．１μｍの銀又は酸化銀
超微粒子とを混合して形成され、該超微粒子の表面が該
有機溶媒で覆われて個々に独立して分散しており、粘度
が室温で１０００ｃＰ以下である銀超微粒子独立分散液
を半導体基板上へ塗布し、加熱して前記有機溶媒を蒸発
させ、焼成することによって前記超微粒子を融着させ、
半導体基板上に厚さ２μｍ以下の銀膜を形成し、その後
不用部分をエッチング処理して取り除き、半導体基板上
に銀配線パターンを形成する方法。1. An organic solvent which is difficult to evaporate at room temperature and evaporates in a drying / firing step when forming a silver wiring on a semiconductor substrate, and a silver or silver oxide having a particle size of 0.001 to 0.1 μm. The ultrafine particles are formed by mixing fine particles, and the surface of the ultrafine particles is covered with the organic solvent and dispersed independently, and the viscosity is 1000 cP or less at room temperature. Coated, heated to evaporate the organic solvent, and by baking to fuse the ultrafine particles,
A method in which a silver film having a thickness of 2 μm or less is formed on a semiconductor substrate, and unnecessary portions are removed by etching, and a silver wiring pattern is formed on the semiconductor substrate.
アルミニウム、マグネシウム、スカンジウム、インジウ
ム、亜鉛、ニッケル、パラジウム、白金、コバルト、ロ
ジウム、イリジウム、鉄、ルテニウム、オスミウム、ク
ロム、タングステン、タンタル、チタン、ニオブ、ビス
マス、鉛、ホウ素、ケイ素、スズ、バリウムから選ばれ
た少なくとも一種の金属、または該金属を含む化合物の
少なくとも一種を添加されたものである請求項１に記載
の銀配線パターンを形成する方法。2. The silver ultrafine particle independent dispersion comprises gold, copper,
From aluminum, magnesium, scandium, indium, zinc, nickel, palladium, platinum, cobalt, rhodium, iridium, iron, ruthenium, osmium, chromium, tungsten, tantalum, titanium, niobium, bismuth, lead, boron, silicon, tin, barium 2. The method for forming a silver wiring pattern according to claim 1, wherein at least one selected metal or a compound containing the metal is added.
リデカン、ドデシルベンゼン若しくはそれらの混合物、
又はそれらにα−テルピネオール又は炭素数５以上の炭
化水素、アルコール、エーテル、エステル、有機窒素化
合物、有機ケイ素化合物、有機イオウ化合物を混合した
ものである請求項１又は請求項２に記載の銀配線パター
ンを形成する方法。3. The method according to claim 1, wherein the organic solvent is mineral spirit, tridecane, dodecylbenzene, or a mixture thereof.
The silver wiring according to claim 1 or 2, wherein α-terpineol or a hydrocarbon having 5 or more carbon atoms, an alcohol, an ether, an ester, an organic nitrogen compound, an organic silicon compound, or an organic sulfur compound is mixed therewith. How to form a pattern.
タ、浸漬、スプレー等の手段によって前記半導体基板に
適用される請求項１乃至３いずれかに記載の銀配線パタ
ーンを形成する方法。4. The method for forming a silver wiring pattern according to claim 1, wherein the silver ultrafine particle independent dispersion is applied to the semiconductor substrate by means such as a spin coater, immersion, or spraying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11207578A JP2001035814A (en) | 1999-07-22 | 1999-07-22 | Method of forming silver wiring pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11207578A JP2001035814A (en) | 1999-07-22 | 1999-07-22 | Method of forming silver wiring pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001035814A true JP2001035814A (en) | 2001-02-09 |
Family
ID=16542086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11207578A Pending JP2001035814A (en) | 1999-07-22 | 1999-07-22 | Method of forming silver wiring pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001035814A (en) |
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| JP2006321948A (en) * | 2005-05-20 | 2006-11-30 | Sumitomo Electric Ind Ltd | Metal particulate dispersion and method for forming metal film by using the same |
| JP2007073856A (en) * | 2005-09-09 | 2007-03-22 | Sony Corp | Formation method of conductive pattern, manufacturing method of semiconductor device, and manufacturing method of organic electroluminescent element |
| JP2007090767A (en) * | 2005-09-29 | 2007-04-12 | Dainippon Printing Co Ltd | Gas barrier film |
| US20070098883A1 (en) * | 2003-09-12 | 2007-05-03 | Daisuke Itoh | Metal nanoparticle dispersion usable for ejection in the form of fine droplets to be applied in the layered shape |
| CN100339914C (en) * | 2003-07-23 | 2007-09-26 | 夏普株式会社 | Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate |
| EP1887106A1 (en) * | 2005-05-30 | 2008-02-13 | Sumitomo Electric Industries, Ltd. | Metal coating film, method for forming same, and metal wiring |
| US7405156B2 (en) | 2004-07-07 | 2008-07-29 | Nec Lcd Technologies, Ltd. | Method of forming wiring pattern |
| US10249804B2 (en) | 2016-07-19 | 2019-04-02 | Nichia Corporation | Semiconductor device, base, and method for manufacturing same |
| US10586896B2 (en) | 2016-05-11 | 2020-03-10 | Nichia Corporation | Semiconductor element, semiconductor device, and method for manufacturing semiconductor element |
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| CN100339914C (en) * | 2003-07-23 | 2007-09-26 | 夏普株式会社 | Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate |
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| US10586896B2 (en) | 2016-05-11 | 2020-03-10 | Nichia Corporation | Semiconductor element, semiconductor device, and method for manufacturing semiconductor element |
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