JP2001023505A - Inspection of cathode panel for cold cathode field electron emission display - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of inspecting a cathode panel of a cold cathode field electron emission display (a method of eliminating/correcting short circuits) which can substantially and surely eliminate defective field emission elements. SOLUTION: In this inspection method, a voltage is applied between an electron emission part 26 and a gate electrode 24 of a cathode panel where a plurality of cold cathode field electron emission elements composed of the electron emission parts 26 and the gate electrodes 24 are formed on a support 21. When the electron emission part 26 and the gate electrode 24 are short-circuited, the short circuit 24, 26, 30 is vaporized or evaporated by the heat generated, and thus the short circuit between the electron emission part 26 and the gate electrode 24 is made nonconductive.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for inspecting a cathode panel for a cold cathode field emission display.

[0002]

2. Description of the Related Art Various types of flat-panel (flat-panel) display devices have been studied as image display devices to replace the current mainstream cathode ray tube (CRT). Examples of such a flat display device include a liquid crystal display device (LCD), an electroluminescence display device (ELD), and a plasma display device (PDP). Also, a cold cathode field emission display (FED) capable of emitting electrons from a solid into a vacuum without thermal excitation has been proposed. Attention has been paid to color display and low power consumption.

[0003] A cold cathode field emission display (hereinafter sometimes abbreviated as a display) is generally a cold cathode field emission display in which an electron emission region is formed corresponding to each pixel arranged in a two-dimensional matrix. Cathode panel for electron emission display (hereinafter sometimes abbreviated as cathode panel)
And an anode panel having a phosphor layer that emits light when excited by collision with electrons emitted from the electron emission region, and is arranged to face each other via a vacuum layer. Each electron emission region formed on the cathode panel is usually
It comprises one or more cold cathode field emission devices (hereinafter sometimes abbreviated as field emission devices).

[0004] In general, field emission devices can be classified into Spindt type, edge type and planar type.

As an example, FIG. 1 is a conceptual diagram of a display device to which a Spindt-type field emission device is applied, and FIG. 2 is a schematic exploded perspective view of a part of a cathode panel 10 and an anode panel 60. A Spindt-type field emission device constituting such a display device includes a cathode electrode 22 formed on a support 21, an insulating layer 23, a gate electrode 24 formed on the insulating layer 23, a gate electrode 24 and the insulating layer 23. And a conical electron emission electrode (emitter electrode) 26 formed in an opening 25 provided therethrough. A predetermined number of the electron emission electrodes 26 are arranged in a two-dimensional matrix to form the electron emission region 12 forming one pixel. The cathode electrode 22 has a stripe shape extending in a first direction, and the gate electrode 24 has a stripe shape extending in a second direction different from the first direction (see FIG. 2). The region where the striped cathode electrode 22 and the striped gate electrode 24 overlap is the electron emission region 1
Equivalent to 2. The cathode panel 10 includes a support 21,
And, it is composed of the plurality of electron emission regions 12.

On the other hand, the anode panel 60 comprises a substrate 61
The phosphor layer 62 having a predetermined pattern thereon (specifically, as shown in FIG. 2, the phosphor layer 62 emitting red light)
B, a phosphor layer 62G that emits green light, and a phosphor layer 62B that emits blue light) are formed, and the phosphor layer 62 is covered with an anode electrode 63. The phosphor layers 62R, 62G, and 62B are buried with a black matrix 64 made of a light-absorbing material such as carbon to prevent a displayed image from being turbid. The stacking order of the phosphor layer 62 and the anode electrode 63 on the substrate 61 may be reversed, but in this case, the anode electrode 63 is
Since it comes before the anode 2, the anode electrode 63 needs to be made of a transparent conductive material such as ITO (indium tin oxide).

[0007] A voltage is applied to the cathode electrode 22 from the scanning circuit, a voltage is applied to the gate electrode 24 from the control circuit, and the field corresponds to an electron emission portion by an electric field generated by a potential difference between the cathode electrode 22 and the gate electrode 24. Electrons are emitted from the tip of the electron emission electrode 26 based on the quantum tunnel effect. Then, the electrons are attracted to the anode 63 provided on the anode panel 60, and the anode 6
It collides with a phosphor layer 62 which is a light emitting layer formed between the transparent substrate 3 and the transparent substrate 61. Note that a positive potential is applied to the anode electrode 63 from an acceleration power supply. As a result, the phosphor layer 6
2 is excited to emit light, and a desired image can be obtained. The operation of the field emission device basically depends on the gate electrode 24.
Is controlled by the voltage applied to

An outline of a method of manufacturing a Spindt-type field emission device in the display device shown in FIGS. 1 and 2 will be described below with reference to FIGS. 7 and 8 which are schematic partial end views of a support and the like. explain. This manufacturing method is basically a method of forming the conical electron emission electrode 26 by vertical vapor deposition of a metal material. That is, the vapor deposition particles enter the opening 25 perpendicularly, but the amount of the vapor deposition particles reaching the bottom of the opening 25 by utilizing the shielding effect of the overhanging deposit formed near the opening end. Is gradually reduced, and the electron emission electrode 26 which is a conical deposit is formed in a self-aligned manner. Here, a method of forming a release layer 27 on the gate electrode 24 in advance to facilitate removal of unnecessary overhang-like deposits will be described with reference to FIGS.

[Step-100] First, a conductive material layer for a cathode electrode made of, for example, polysilicon is formed on a support 21 made of, for example, a glass substrate by a plasma CVD method, and then a lithography technique and a dry etching technique are used. The cathode electrode 22 is formed by patterning the cathode electrode conductive material layer based on the above. The patterned conductive material layer for cathode electrode 22A has a stripe shape. After that, the insulating layer 23 made of SiO ₂ is
In method D, a conductive material layer for a gate electrode (for example, an aluminum layer) is sequentially formed by a sputtering method, and then, the conductive material layer for a gate electrode is patterned by a lithography technique and a dry etching technique. A gate electrode 24 made of a conductive material layer for a gate electrode and having an opening 25 is formed. Specifically, gate electrode 24 is made of aluminum. The patterned gate electrode conductive material layer 24A has a stripe shape. Thereafter, using the gate electrode 24 as an etching mask, an opening 25 having a diameter of, for example, about 1 μm is formed in the insulating layer 23 (see FIG. 7A). The stripe-shaped conductive material layer for cathode electrode 22A extends in the first direction, and the stripe-shaped conductive material layer for gate electrode 24A extends in a second direction different from the first direction.
And the second direction are in a right angle relationship.

[Step-110] Next, nickel (Ni) is obliquely vapor-deposited on the insulating layer 23 including the gate electrode 24 while rotating the support 21 to form a peeling layer 27 (see FIG. 7). (B)). At this time, the support 21
By selecting a sufficiently large incident angle of the vapor deposition particles with respect to the normal line (for example, an incident angle of 65 to 85 degrees), the nickel is hardly deposited on the bottom of the opening 25 and peeled off on the gate electrode 24. Layer 27 can be formed. The release layer 27 projects from the opening end of the opening 25 in an eaves-like manner, whereby the diameter of the opening 25 is substantially reduced.

[Step-120] Next, for example, molybdenum (Mo) is vertically deposited as a conductive material on the entire surface (incident angle: 3 to 10 degrees). At this time, as shown in FIG. 8A, as the conductive material layer 28 having the overhang shape grows on the separation layer 27, the substantial diameter of the opening 25 is gradually reduced. The deposition particles contributing to deposition at the bottom of the portion 25 gradually become limited to those passing near the center of the opening 25. As a result, a conical deposit is formed at the bottom of the opening 25, and the conical deposit becomes the electron emission electrode 26.

[Step-130] Thereafter, the peeling layer 27 is peeled off from the surface of the gate electrode 24 by the lift-off method, and the conductive material layer 28 above the gate electrode 24 is selectively removed ((FIG. 8) B)). Thus, a cathode panel on which a plurality of Spindt-type field emission devices are formed can be obtained.

[0013]

By the way, in order to manufacture a large-sized display device, extremely clean processing and high processing accuracy are required. For example, in order to manufacture a color display device having 380,000 pixels, it is necessary to form 1.14 million electron emission regions. Further, when a display device is composed of Spindt-type field emission devices, one electron emission region must be composed of about several tens to 1,000 Spindt-type field emission devices. Therefore, it is necessary to fabricate tens of millions or more of fine field emission devices, each of which is close to less than several μm.

However, in the manufacturing process of the above-mentioned Spindt-type field emission device, in order to manufacture a large-area display device, the exfoliation layer 27 is peeled over a large-area support (for example, a glass substrate). It is necessary to perform such release layer 2
The peeling of 7 causes a defect of the field emission device. Further, also in the dry process, the amount of accumulated reaction products increases when processing a large-area support, and particles tend to cause defects in the field emission device. If a conductive foreign substance is present between the gate electrode 24 and the electron emission electrode 26, the gate electrode 24 and the electron emission electrode 26 are short-circuited, so that electrons are not emitted from the field emission element, and a dark spot ( A dark spot) appears. In a cathode panel, usually, a plurality of electron emission region rows in which a plurality of electron emission regions are arranged one-dimensionally (stripes) are juxtaposed.
In some cases, complete display of the entire row of the stripe-shaped electron emission region including the field emission element cannot be performed.

At present, foreign substances are removed after the field emission device is manufactured by cleaning the entire support using a cleaning agent containing 2- (2-aminoethoxy) ethanol as a main component, ultrasonic cleaning using pure water, and brushing. It is performed by the scrub law etc.,
Complete removal of foreign matter is difficult.

If the peeling layer 27, the peeling residue thereof, and the conductive material layer 28 remain attached to the side surface of the opening 25, the gate electrode 24 and the electron emitting electrode 26 are short-circuited. Electrons are not emitted, and a dark spot (dark spot) appears on the display device.

Hereinafter, there will be described a field emission in a state where a conductive foreign substance exists between the gate electrode 24 and the electron emission portion (for example, the electron emission electrode 26) and the gate electrode 24 and the electron emission portion are short-circuited. The element and the release layer 2 on the side surface of the opening 25
7, the field emission element in which the gate electrode 24 and the electron emission portion are short-circuited with the conductive material layer 28 remaining attached and the conductive material layer 28 are collectively referred to as a defective field emission element. The part constituting the state is called a short-circuited part.

Accordingly, an object of the present invention is to provide a method of inspecting a cathode panel for a cold cathode field emission display device (a method of removing a short-circuited portion, which can substantially and reliably remove defective field emission devices). Correction method).

[0019]

According to a first aspect of the present invention, there is provided a method of inspecting a cathode panel for a cold cathode field emission display according to the first aspect of the present invention (hereinafter referred to as the first aspect of the present invention). The method is referred to as a method of removing a short-circuit portion according to the aspect), in which a voltage is applied between an electron-emitting portion and a gate electrode of a cathode panel in which a plurality of cold cathode field emission devices each including an electron-emitting portion and a gate electrode are formed on a support. Is applied, and when the electron-emitting portion and the gate electrode are in a short-circuit state, the short-circuited portion is evaporated or vaporized based on the generated heat, whereby the electron-emitting portion and the gate electrode are brought into a non-conductive state. It is characterized by doing.

In this specification, “evaporation” is defined as a phenomenon in which a substance changes from a solid phase to a gaseous phase without reacting with another substance. It is defined as a phenomenon in which a substance changes from a solid phase to a gas phase while reacting with another substance.

In the method for removing a short-circuit portion according to the first aspect of the present invention, when the cathode panel is placed in an atmosphere having a pressure of 10 Pa or less and the short-circuit occurs between the electron-emitting portion and the gate electrode, the short-circuit occurs. It is desirable to evaporate the short-circuited portion based on the generated heat. Thus, the pressure of the atmosphere is set to 10
By setting it to Pa or less, evaporation of the short-circuited portion can be promoted. In this case, when the electron emitting portion and the gate electrode are in a short-circuit state, it is desirable to evaporate a part of the gate electrode based on the generated heat. In other words, it is desirable that the gate electrode be made of a material in which a part of the gate electrode evaporates based on the generated heat when the electron emitting portion and the gate electrode are in a short circuit state. It is desirable that the temperature at which the material forming the gate electrode evaporates is lower than the temperature at which the material forming the electron-emitting portion evaporates. Specifically, aluminum (Al), its alloy, indium (I)
n) and alloys thereof. Further, as a material constituting the electron emitting portion, a metal such as tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), chromium (Cr), copper (Cu) or the like Alloys and compounds (eg Ti
Nitrides such as N, WSi ₂ , MoSi ₂ , TiSi ₂ , T
a silicide such as aSi ₂ ) or a semiconductor such as diamond.

Alternatively, in the method for removing short-circuit portions according to the first aspect of the present invention, the cathode panel is placed in an atmosphere containing an etching gas, and a voltage is applied between the electron-emitting portion and the gate electrode. When the electron emitting portion and the gate electrode are in a short-circuit state, it is desirable that the short-circuited portion is vaporized by etching based on generated heat and an etching gas. If the defect is vaporized by the assist of the etching gas in this manner, the defect can be removed at a lower temperature than when the defect is vaporized, which adversely affects the adjacent cold cathode field emission device. In addition, there is no possibility that the material forming the evaporated defect portion adheres to the electron emission portion or the gate electrode, and the defect portion is generated again. In this case, when the electron emitting portion and the gate electrode are in a short-circuit state, it is desirable to vaporize a part of the gate electrode based on the generated heat and the etching gas. In other words, it is desirable that the gate electrode be made of a material that partially vaporizes the gate electrode based on the generated heat and the etching gas when the electron emitting portion and the gate electrode are in a short circuit state.
That is, it is desirable that the etching rate of the material forming the gate electrode with respect to the etching gas is higher than the etching rate of the material forming the electron emission portion. Specifically, examples of a material forming the gate electrode include aluminum (Al) and titanium (Ti), and alloys and compounds thereof. These materials are materials that can be vaporized in a chlorine-based gas or an atmosphere containing a chlorine-based gas. In this case, it is preferable that the electron-emitting portion be made of a material that does not vaporize in a chlorine-based gas or in an atmosphere containing a chlorine-based gas. (N
b), metals such as tantalum (Ta), molybdenum (Mo), chromium (Cr), and copper (Cu), or alloys and compounds containing these metal elements. Examples of a material forming the gate electrode include tungsten (W), an alloy and a compound thereof, and silicon (Si) and a compound thereof. These materials are materials that can be vaporized in a fluorine-based gas or an atmosphere containing a fluorine-based gas. In this case, it is preferable that the electron-emitting portion be made of a material that does not vaporize in a fluorine-based gas or in an atmosphere containing a fluorine-based gas. Examples thereof include metals such as (Ta), molybdenum (Mo), chromium (Cr), and copper (Cu), and alloys and compounds containing these metal elements.

The second object of the present invention for achieving the above object.
The method for inspecting a cathode panel for a cold cathode field emission display according to the aspect (hereinafter referred to as a method for removing a short-circuit portion according to the second aspect of the present invention) includes an electron-emitting portion and a gate electrode on a support. A voltage is applied between the electron-emitting portion and the gate electrode while the cathode panel on which the cold-cathode field electron-emitting device is formed is immersed in a nonconductive liquid. When the space is in a short-circuit state due to conductive foreign matter, the generated heat evaporates the liquid,
The conductive bubbles are removed by the resulting bubbles,
A non-conductive state is provided between the electron-emitting portion and the gate electrode. Liquid nitrogen (liquid nitrogen) as such liquid
Can be exemplified.

As cold cathode field emission devices (hereinafter abbreviated as field emission devices), (A) a cathode electrode formed on a support, and (B) an insulating film formed on a support including the cathode electrode. A layer, (C) a gate electrode formed on the insulating layer, (D) an opening penetrating the gate electrode and the insulating layer,
And (E) a Spindt-type field emission element which is composed of a conical electron emission electrode formed on the cathode electrode located at the bottom of the opening, and wherein the electron emission electrode corresponds to the electron emission portion. However, the present invention is not limited to such a field emission device, and may be a so-called edge type field emission device or a flat type field emission device.

In the present invention, when the electron emitting portion and the gate electrode are in a short-circuit state, the short-circuited portion is evaporated or vaporized based on the generated heat, so that the distance between the electron-emitting portion and the gate electrode is reduced. When it is in a non-conductive state, or when the electron emitting portion and the gate electrode are in a short-circuit state by a conductive foreign matter, the generated heat evaporates the liquid, and the resulting bubbles remove the conductive foreign matter, Thus, the space between the electron-emitting portion and the gate electrode is brought into a non-conductive state. Therefore,
As a result of the substantial removal of the short-circuit portion (defective field emission device), it is impossible to completely display the electron emission portion including the defect field emission device or the entire row of the stripe-shaped electron emission portion row. Can be avoided. In addition, as a result of no longer emitting electrons from the field emission device, it is possible to reliably prevent the occurrence of a phenomenon that a dark spot (dark spot) appears in a cold cathode field emission display (hereinafter, simply referred to as a display). it can.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings based on embodiments of the present invention (hereinafter, abbreviated as embodiments).

(Embodiment 1) Embodiment 1 relates to a method for removing a short-circuit portion according to the first aspect of the present invention. In the first embodiment, the cathode panel 10 is
1 on the electron emission portion (more specifically, the electron emission electrode 26
And a plurality of cold cathode field emission devices comprising the gate electrode 24 are formed. One electron emission region 12 is composed of a plurality (for example, about several tens to 1,000) of Spindt-type field emission devices. A conceptual diagram of this display device and a schematic exploded perspective view of a part of the cathode panel 10 and the anode panel 60 are as shown in FIGS. FIG. 3A is a schematic partial perspective view of the cathode panel 10, and FIG. It is shown in (B). FIG.
In (B), illustration of a support, an insulating layer, and the like is omitted.

The structure of the Spindt-type field emission device is as shown in FIG. That is, the Spindt-type field emission device includes (A) a cathode electrode 22 formed on a support 21, (B) an insulating layer 23 formed on the support 21 including the cathode electrode 22, and (C) an insulating layer. A gate electrode 24 formed on the gate electrode 23, (D) an opening 25 penetrating the gate electrode 24 and the insulating layer 23, and (E) an opening 25.
An electron emission electrode 26 having a conical shape formed on the cathode electrode 22 located at the bottom of the
The electron emission electrode 26 corresponds to an electron emission part. That is, electrons are emitted from the tip of the electron emission electrode 26. The basic manufacturing method of the Spindt-type field emission device is as described above in [Step-100] to [Step-130] with reference to FIGS.

A cathode electrode of a Spindt-type field emission device constituting the electron emission region 12 is formed on a cathode electrode conductive material layer 22A patterned in a stripe shape (only one is shown by a dotted line in FIG. 3A). 22 are present in a desired number. Specifically, the stripe-shaped conductive material layer for cathode electrode 22A itself corresponds to the cathode electrode 22, and the region of the conductive material layer for cathode electrode 22A located at the bottom of the opening 25 corresponds to the cathode electrode 22. In addition, a desired number of gate electrodes 24 of the Spindt-type field emission device constituting the electron emission region 12 are present in the gate electrode conductive material layer 24A patterned in a stripe shape. Specifically, the conductive material layer for gate electrode 24A in the form of a stripe corresponds to the gate electrode 24 itself, and the conductive material layer for gate electrode 24A located near the opening 25.
The region A corresponds to the gate electrode 24. A region where the stripe-shaped cathode electrode conductive material layer 22A and the stripe-shaped gate electrode conductive material layer 24A overlap with each other corresponds to each electron emission region 12. The direction in which the stripe-shaped cathode electrode conductive material layer 22A extends (referred to as a first direction) is different from the direction in which the stripe-shaped gate electrode conductive material layer 24A extends (referred to as a second direction).
Preferably, the second direction is perpendicular to the first direction.

As shown in FIG. 4A, it is assumed that there is a field emission device in which the electron emission electrode 26 corresponding to the electron emission portion and the gate electrode 24 are in a short-circuit state. That is, the conductive foreign matter 3 is located between the electron emission electrode 26 and the gate electrode 24.
It is assumed that there is a field emission element with 0 interposed. In such a case, since the plurality of electron emission regions are arranged one-dimensionally (striped), that is, since the field emission elements are connected in parallel, the cathode electrode 22 and the gate electrode 24 is short-circuited,
In the worst case, complete display of the entire row of the stripe-shaped electron emission region including the field emission element may not be performed.

In the first embodiment, a voltage is applied between the electron emission electrode 26 corresponding to the electron emission portion of the cathode panel 10 and the gate electrode 24 (more specifically, a voltage is applied).
A voltage is applied between the cathode electrode 22 to which the electron emission electrode 26 is connected and the gate electrode 24). As shown schematically in FIG. 4A, a short circuit occurred between the electron emission electrode 26 corresponding to the electron emission portion and the gate electrode 24 due to the presence of the conductive foreign matter 30 as shown in FIG. The short circuit point evaporates due to heat. More specifically, the gate electrode 2
4 evaporates (see FIG. 4B). As a result, the space between the electron emission portion (specifically, the electron emission electrode 26) and the gate electrode 24 is rendered non-conductive. In FIG. 4B, reference numeral 24B indicates a portion where the gate electrode 24 has evaporated.

In the first embodiment, for example, FIG.
The inspection apparatus 100 shown in FIG. This test apparatus 100
Includes a housing 101 functioning as a vacuum chamber. An inspection table 102 is provided in the housing 101, and the inspection table elevating cylinder 1 is provided below the inspection table 102.
03 is attached. Inspection table elevating cylinder 10
3 is mounted on a movable pedestal (not shown),
38 can be moved in the direction perpendicular to the plane of FIG. A pin elevating cylinder 104 is further attached below the inspection table 102, and the pin 105 moves up and down in a hole penetrating the inspection table 102 by the operation of the pin elevating cylinder 104. The housing 101 is connected to a vacuum pump (not shown) via a valve 107.
1 atmosphere can be made high vacuum. Housing 1
01, an inspection voltage application needle 109 having a structure capable of contacting the end of the stripe-shaped conductive material layer 22A for the cathode electrode and the end of the conductive material layer 24A for the gate electrode is formed, for example, by a stripe. The cathode electrode conductive material layers 22A and the stripe-shaped gate electrode conductive material layers 24A are arranged in the same number. Inspection voltage application needle 1
09 can be moved up and down by a cylinder 108. The inspection voltage application needle 109 is connected to the high / low voltage switching box 112.
It is connected to the. The high / low voltage switching box 112
It is connected to a low voltage scanning power supply / current monitor 110 and a high voltage scanning power supply / current monitor 111.

When inspecting the cathode panel 10,
After the cathode panel 10 placed on the inspection table 102 is carried into the housing 101 through a door (not shown) provided in the housing 101, the inside of the housing 101 is subjected to a predetermined pressure (for example, by a vacuum pump). 10Pa)
And

When the inside of the housing 101 has a desired atmosphere, the inspection table elevating cylinder 103 is operated to raise the inspection table 102 and the cylinder 108 is operated to form a striped conductive material layer for a cathode electrode. 22
A end and conductive material layer 2 for stripe-shaped gate electrode
The inspection voltage application needle 109 is brought into contact with the end of 4A. Then, a voltage of, for example, 50 volts is applied between the cathode electrode 22 and the gate electrode 24 from the low-voltage scanning power supply / current monitor 110 via the high / low voltage switching box 112 and the inspection voltage application needle 109, Whether a current flows between the gate electrode 22 and the gate electrode 24 is measured by the low-voltage scanning power supply / current monitor 110. In particular,
For example, in a state where a voltage is applied to one end of one stripe-shaped conductive material layer for cathode electrode 22A, a voltage is sequentially applied to the conductive material layer for gate electrode 24A, and the voltage is applied to all the conductive material layers for gate electrode 24A. When such an operation is completed, a voltage is sequentially applied to the gate electrode conductive material layer 24A while a voltage is applied to the next cathode electrode conductive material layer 22A, and a voltage is applied to all the gate electrode conductive material layers 24A. When such an operation is completed, an operation of applying a voltage to the next conductive material layer for cathode electrode 22A is repeated for all the conductive material layers for cathode electrode 22A.
Conversely, for example, in a state where a voltage is applied to one gate electrode conductive material layer 24A, a voltage is sequentially applied to the cathode electrode conductive material layer 22A, and all the cathode electrode conductive materials are applied. After the operation on the layer 22A is completed, the voltage is applied to the next conductive material layer 24A for the gate electrode, and then the conductive material layer 22A for the cathode electrode is sequentially applied.
A voltage is applied, and all the conductive material layers 22A for cathode electrodes are applied.
After the above operation, the operation of applying a voltage to the next gate electrode conductive material layer 24A may be repeated for all the gate electrode conductive material layers 24A.

If no current flows between the cathode electrode 22 and the gate electrode 24, there is no short circuit between the electron emission electrode 26, which is an electron emission portion, and the gate electrode 24. on the other hand,
In the low-voltage scanning power supply / current monitor 110, for example, 5
If it is detected that a current of 0 nA flows, one of the field emission elements constituting the electron emission region where the stripe-shaped cathode electrode conductive material layer 22A and the stripe-shaped gate electrode conductive material layer 24A intersect. Is determined to be in a short circuit state. In such a case, the high / low voltage switching box 112 is switched, and the cathode electrode 22 and the gate electrode 24 are switched from the high voltage scanning power supply / current monitor 111 via the high / low voltage switching box 112 and the inspection voltage application needle 109. , A voltage of, for example, 0 to 10 kV is gradually applied. As a result, the short-circuit portion, more specifically, a part of the gate electrode 24 generates heat. As a result, a part of the gate electrode 24 made of aluminum, more specifically, a part of the gate electrode 24 near the conductive foreign matter 30 has a temperature of about 500 ° C., and such a part evaporates. This state is schematically shown in FIG. In FIG. 6, the conductive foreign matter 30 is hatched to clearly show the conductive foreign matter 30. After that, the high / low voltage switching box 112 is switched, and the low voltage scanning power supply / current monitor 11 is switched.
From 0, a voltage of, for example, 50 volts is again applied between the cathode electrode 22 and the gate electrode 24 via the high / low voltage switching box 112 and the inspection voltage application needle 109, and the low voltage scanning power supply / current monitor 110 Check that no current flows.

By the above operation, the short-circuit state between the electron emission electrode 26 and the gate electrode 24 is eliminated, and the short-circuited portion is substantially removed. It is possible to avoid the problem that the complete display of the entire row cannot be performed. Whether the electron emission electrode 26 or the gate electrode 24 evaporates or both of them evaporates further depends on the degree of the electron emission electrode 26 and the gate electrode 24.
Whether it evaporates depends on conditions such as a material constituting the electron emission electrode 26 and the gate electrode 24, a voltage applied to the conductive material layer 22A for the cathode electrode, and the conductive material layer 24A for the gate electrode.

After the completion of the inspection, the atmosphere in the housing 101 is set to the atmosphere, the inspection table elevating cylinder 103 is operated, the inspection table 102 is lowered, and the inspection table 102 on which the cathode panel 10 is mounted is moved to the housing 101. Remove from

On the other hand, in the anode panel 60, a black matrix 64 made of a light-absorbing material such as carbon is formed on the surface of a substrate 61 made of, for example, glass to improve the contrast, and then the phosphor layer 62 is formed. It is applied according to a predetermined pattern. Next, an intermediate film made of, for example, lacquer is applied to the entire surface to smooth the anode electrode formed in the next step. Thereafter, an anode electrode (also referred to as a reflective film or a metal back) 63 made of aluminum is deposited on the intermediate film. Then, about 44
The intermediate film is burned off by performing a heat treatment at 0 ° C. for 30 minutes. Thus, the anode electrode 63 and the phosphor layer 6
2 can be obtained.

Then, frit glass is applied to the peripheral portion of the cathode panel 10 and pre-baked. In addition, a peripheral portion of the anode panel 60 and a frame made of an insulating material such as glass or quartz are temporarily bonded using frit glass. Further, frit glass is also applied to the surface of the frame facing the cathode panel 10 and preliminarily baked.
Then, the cathode panel 10 and the anode panel 60
Is carried into a vacuum chamber (not shown), and the vacuum chamber is evacuated.
By baking for 0 minutes, the cathode panel 10 and the anode panel 60 are joined at their peripheral portions, and the space between the cathode panel 10 and the anode panel 60 is reduced to about 10 ⁻⁴ Pa. Apply vacuum. Thus, a display device can be obtained. It should be noted that a display device can be obtained by performing the same steps on a cathode panel and an anode panel incorporating an edge type field emission device or a flat type field emission device described below.

Alternatively, after the cathode panel 10 and the anode panel 60 are joined at their peripheral portions, the space between the cathode panel 10 and the anode panel 60 may be evacuated. In this case, a tip tube is attached to the cathode panel 10 or the anode panel 60, and the cathode panel 10 and the anode panel are connected.
After joining the panel 60 at the periphery thereof, the cathode panel 10 and the anode panel 60 are connected via a chip tube.
The space sandwiched between the above is evacuated, and after the space reaches a desired degree of vacuum, the tip tube may be thermally welded.

In some cases, as shown schematically in FIG. 5A, a release layer, a release residue thereof, and a conductive material layer may remain on the side surface of the opening 25. . In FIG. 5A, these are represented by a conductive thin film 31. Even in such a state, the gate electrode 24 and the electron emission electrode 26 are short-circuited. Also in this case, the cathode electrode 2 to which the electron emission electrode 26 is connected is connected.
When a voltage is applied between the electron emission electrode 26 and the gate electrode 24, a current flows in the field emission device in which the electron emission electrode 26 and the gate electrode 24 are in a short-circuit state. The electrode 24 (in some cases, the conductive thin film 31) generates heat and evaporates, and the electron emission electrode 26 and / or
Alternatively, the gate electrode 24 becomes non-conductive. This state is schematically shown in FIG. As a result, the short-circuit state between the electron emission electrode 26 and the gate electrode 24 is eliminated, and the short-circuit portion is substantially removed. As a result, the entire row of the stripe-shaped electron emission region row including the field emission element is removed. It is possible to avoid the problem that complete display cannot be performed.

(Embodiment 2) In Embodiment 1, when the electron emitting portion and the gate electrode are in a short-circuit state, a part of the gate electrode 24 is evaporated based on generated heat. At this time, in some cases, a part of the gate electrode of the adjacent field emission device may evaporate, and the adjacent field emission device may not function normally. Further, the material (for example, aluminum) forming the evaporated gate electrode 24 may adhere to another field emission device, and the field emission device may be short-circuited.

The second embodiment is a modification of the first embodiment. The second embodiment is different from the first embodiment in that the cathode panel is placed in an atmosphere containing an etching gas, a voltage is applied between the electron-emitting portion and the gate electrode, and the electron-emitting portion and the gate electrode are separated. Is in a short-circuited state, and the short-circuited portion is etched (more specifically, a part of the gate electrode is vaporized) based on the generated heat and the etching gas. In the second embodiment, since the defect portion is vaporized by the assist of the etching gas, the defect portion can be removed at a lower temperature than when the defect portion is evaporated. Therefore, there is no adverse effect on the adjacent cold cathode field emission devices, and there is no possibility that the material forming the evaporated defect portion adheres to the electron emission portion or the gate electrode and the defect portion is generated again.

In the second embodiment, the cathode panel 1
In order to inspect 0, the cathode panel 10 placed on the inspection table 102 is carried into the housing 101 via a door (not shown) provided on the housing 101 shown in FIG. The inside is set to a predetermined pressure (for example, 10 Pa) by a vacuum pump.

Then, when the inside of the housing 101 has a desired atmosphere, the inspection table elevating cylinder 103 is operated to raise the inspection table 102, and the cylinder 10
8, the inspection voltage applying needle 109 is brought into contact with the end of the stripe-shaped cathode electrode conductive material layer 22A and the end of the stripe-shaped gate electrode conductive material layer 24A. Then, from the low voltage scanning power supply / current monitor 110 to the high / low voltage switching box 112, the inspection voltage applying needle 109
, A voltage of, for example, 50 volts is applied between the cathode electrode 22 and the gate electrode 24 to determine whether a current flows between the cathode electrode 22 and the gate electrode 24 or not. Measured by Specifically, the same operation as in Embodiment 1 may be performed.

If no current flows between the cathode electrode 22 and the gate electrode 24, there is no short circuit between the electron emission electrode 26, which is an electron emission portion, and the gate electrode 24. on the other hand,
In the low-voltage scanning power supply / current monitor 110, for example, 5
If it is detected that a current of 0 nA flows, one of the field emission elements constituting the electron emission region where the stripe-shaped cathode electrode conductive material layer 22A and the stripe-shaped gate electrode conductive material layer 24A intersect. Is determined to be in a short circuit state. In such a case, the housing 10
1 introduces chlorine gas.

Then, the high / low voltage switching box 112 is switched, and the cathode electrode 22 and the gate electrode 24 are connected from the high voltage scanning power supply / current monitor 111 via the high / low voltage switching box 112 and the inspection voltage applying needle 109. Between,
For example, a voltage from 0 volt to 1 kilovolt is gradually applied. As a result, heat is generated at the short-circuited portion, and as a result, a part of the gate electrode 24 made of aluminum, more specifically, the conductive foreign matter 30 is formed by the activated chlorine.
Is partially etched in the vicinity of the gate electrode 24, and such a portion is vaporized as AlCl ₃ . This state is schematically shown in FIG. The above operation is performed for all the short-circuited field emission devices. Since AlCl ₃ has a high vapor pressure, the possibility of redeposition on the electron-emitting portion and the gate electrode is small, and there is little adverse effect on other field emission devices.

After the interior of the housing 101 is set to a predetermined pressure (for example, 10 Pa) by a vacuum pump, the high / low voltage switching box 112 is switched, and the high / low voltage switching box 1 is switched from the low voltage scanning power supply / current monitor 110.
12, the cathode electrode 2 via the inspection voltage applying needle 109
A voltage of, for example, 50 volts is applied again between the gate electrode 2 and the gate electrode 24, and the low-voltage scanning power supply / current monitor 110 confirms that no current flows.

As a result, the short-circuit state between the electron-emitting electrode 26 and the gate electrode 24 is eliminated, and the short-circuited portion is substantially removed. As a result, the stripe-shaped electron-emitting region row including the field-emission element is formed. It is possible to avoid a problem that a complete display of an entire row cannot be performed.
It should be noted that which of the electron emission electrode 26 and the gate electrode 24 is vaporized, or whether both are vaporized,
The degree to which the electron emission electrode 26 and the gate electrode 24 are vaporized depends on the materials constituting the electron emission electrode 26 and the gate electrode 24, the voltage applied to the conductive material layer 22A for the cathode electrode and the conductive material layer 24A for the gate electrode, and the like. Depends on the conditions.

After the completion of the inspection, the atmosphere in the housing 101 is set to the atmospheric atmosphere, the inspection table elevating cylinder 103 is operated, the inspection table 102 is lowered, and the inspection table 102 on which the cathode panel 10 is mounted is moved to the housing 101. Remove from

(Embodiment 3) Embodiment 3 relates to a method of removing a short-circuit portion according to a second aspect of the present invention. In the third embodiment, as in the first embodiment, the cathode
The panel 10 includes a support 21 on which a plurality of cold cathode field emission devices including an electron emission portion and a gate electrode 24 are formed. One electron emission region 12 is composed of a plurality (for example, about several tens to 1,000) of Spindt-type field emission devices. A conceptual diagram of this display device and a schematic exploded perspective view of a part of the cathode panel 10 and the anode panel 60 are as shown in FIGS.

In the third embodiment, for example, FIG.
The inspection device 120 shown in FIG. This test device 120
Has a housing 121 that functions as a liquefied nitrogen tank. An inspection table 122 is provided in the housing 121. The inspection table 122 has an inspection table elevating cylinder 12.
The inspection table 122 is movable in the vertical direction in FIG. In the housing 121, further, an end portion of the striped conductive material layer 22A for the cathode electrode and a striped conductive material layer 24A for the gate electrode are formed.
The inspection voltage applying needle 126 having a structure capable of contacting the end portion of the conductive material layer 22A is, for example, a stripe-shaped cathode electrode conductive material layer 22A.
In addition, the same number of stripe-shaped gate electrode conductive material layers 24A are provided. The inspection voltage application needle 126 can be moved up and down by the cylinder 124. Cylinder 124
Is attached to a support 125, and the support 125 is attached to an inspection table 122. The inspection voltage application needle 126 is connected to a voltage source / current monitor 127.

When inspecting the cathode panel 10,
By operating the inspection table elevating cylinder 123, the inspection table 10
2 is submerged in the housing 121 filled with liquefied nitrogen. That is, a cathode panel having a cold cathode field emission device including an electron emission portion and a gate electrode formed on a support is immersed in a non-conductive liquid (liquefied nitrogen in the third embodiment).

Then, by operating the cylinder 124,
The inspection voltage applying needle 126 is brought into contact with an end of the stripe-shaped conductive material layer for cathode electrode 22A and an end of the striped conductive material layer for gate electrode 24A. Next, a voltage of, for example, 200 volts is applied between the cathode electrode 22 and the gate electrode 24 from the voltage source / current monitor 127 via the inspection voltage application needle 126, and a current is applied between the cathode electrode 22 and the gate electrode 24. Is measured by the voltage source / current monitor 127. Specifically, the same operation as in Embodiment 1 may be performed.

If no current flows between the cathode electrode 22 and the gate electrode 24, there is no short circuit between the electron emission electrode 26, which is an electron emission portion, and the gate electrode 24. on the other hand,
When a current flows between the cathode electrode 22 and the gate electrode 24, heat is generated at a short-circuited portion, and as a result, liquefied nitrogen starts to evaporate due to the generated heat. Then, the conductive foreign matter is removed by the resulting bubbles (see the schematic diagram of FIG. 6C), and the space between the electron-emitting portion and the gate electrode is rendered non-conductive. Then, on the voltage source / current monitor 127,
Check that no current flows.

After the inspection is completed, the inspection table elevating cylinder 10
3 to raise the inspection table 102,
The inspection table 102 on which the panel 10 is mounted is moved to the housing 10.
Remove from 1

As a result, the short-circuit state between the electron emission electrode 26 and the gate electrode 24 is eliminated, and the short-circuited portion is substantially removed. It is possible to avoid occurrence of a problem that complete display of an entire row cannot be performed.
Note that, unlike the first and second embodiments, the field emission device in which the short-circuit state has been eliminated functions as a normal field emission device.

Hereinafter, the Spindt-type field emission device, the edge-type field emission device, and the flat-type field emission device will be described in the fourth to eleventh embodiments. Against
The method for removing a short-circuit portion according to the present invention described in the first to third embodiments can be applied.

(Fourth Embodiment) A fourth embodiment is a modification of the first embodiment. The structure and manufacturing process of the Spindt-type field emission device are different from those of the first embodiment. The structure of the Spindt-type field emission device according to Embodiment 4 is as shown in FIG.
Except that an adhesion layer 40 is formed, it is substantially the same as the Spindt-type field emission device of the first embodiment. Note that the method of inspecting the cathode panel for the display device can be substantially the same as in the first to third embodiments, and a detailed description thereof will be omitted.

A method of manufacturing the Spindt-type field emission device shown in FIG. 9 will be described below with reference to FIGS. 10 to 12 which are schematic partial end views of a support and the like. The emission element is basically manufactured based on the following steps. (A) Step of forming cathode electrode 22 on support 21 (b) Step of forming insulating layer 23 on support 21 including on cathode electrode 22 (c) Forming gate electrode 24 on insulating layer 23 Step of Forming (d) Opening 25 with Cathode Electrode 22 Exposed at Bottom
(E) a step of forming a conductive material layer 41 for forming electron emission electrodes on the entire surface including the inside of the opening 25 (f) a conductive material layer located at the center of the opening 25 Forming a mask material layer 42 on the conductive material layer 41 so as to cover the region 41; (g) the etching rate of the conductive material layer 41 in the direction perpendicular to the support 21 By etching the conductive material layer 41 and the mask material layer 42 under anisotropic etching conditions that are faster than the etching rate in the direction perpendicular to the body, the conductive material layer 4
1, an electron emission electrode 2 having a conical tip.
Step of forming 6 (corresponding to an electron emitting portion) in the opening 25

[Step-400] First, a cathode electrode 22 made of chromium (Cr) is placed on a support 21 having a SiO ₂ layer having a thickness of about 0.6 μm formed on a glass substrate, for example.
Is provided. Specifically, the cathode electrode conductive material layer made of chromium is deposited on the support 21 by, for example, a sputtering method or a CVD method, and the cathode electrode conductive material layer is patterned to form a plurality of cathode electrodes 2.
2, a stripe-shaped conductive material layer for a cathode electrode extending in parallel with the row direction can be formed. The width of the conductive material layer for the cathode electrode is, for example, 50 μm, and the space between the conductive material layers for the cathode electrode is, for example, 30 μm. Then, on the support 21 including the cathode electrode 22 and the cathode electrode conductive material layer above, a thickness of about consisting SiO ₂ 1 [mu]
The m insulating layer 23 is formed by a plasma CVD method using TEOS (tetraethoxysilane) as a source gas. Next, a gate electrode conductive material layer made of aluminum is formed on the entire surface of the insulating layer 23 by a sputtering method, and the gate electrode conductive material layer is patterned. Thereby, a stripe-shaped conductive material layer for the gate electrode including the plurality of gate electrodes 24 and extending in the column direction, that is, the direction perpendicular to the conductive material layer for the cathode electrode, can be obtained.

Next, an opening 25 penetrating through the gate electrode conductive material layer and the insulating layer 23 is formed in an overlapping region of the cathode electrode conductive material layer and the gate electrode conductive material layer, that is, in one pixel region. I do. The planar shape of the opening 25 is, for example, a circle having a diameter of 0.3 μm. Usually, about several hundred to one thousand openings 25 are formed in one pixel region. In order to form the opening 25, using a resist layer formed by ordinary photolithography as a mask, first, a conductive material layer for a gate electrode is formed by RIE (reactive ion etching) using a chlorine-based etching gas. Then, an opening is formed in the insulating layer 23 by RIE using a fluorocarbon-based etching gas. After the RIE, the resist layer is removed by ashing. Thus, the structure shown in FIG. 10A can be obtained.

[Step-410] Next, the adhesion layer 40 is formed on the entire surface.
Is formed by a sputtering method (see FIG. 10B). The adhesion layer 40 is formed between the insulating layer 23 exposed on the non-formed portion of the gate electrode conductive material layer and the side wall surface of the opening 25 and the conductive material layer 41 entirely formed in the next step. This is a layer provided to enhance the adhesion between the layers. Conductive material layer 41
Is formed on the basis of tungsten.
It is formed to a thickness of μm.

[Step-420] Next, a conductive material layer 41 for forming an electron emission electrode made of tungsten having a thickness of about 0.6 μm is formed on the entire surface including the inside of the opening 25 by hydrogen reduction pressure reduction CV.
It is formed by a method D (see FIG. 11A). On the surface of the formed conductive material layer 41, a concave portion 41A reflecting a step between the upper end surface and the bottom surface of the opening 25 is formed.

[Step-430] Next, a region of the conductive material layer 41 located at the center of the opening 25 (specifically, the recess 4
The mask material layer 42 is formed so as to shield 1A).
Specifically, first, a thickness of 0.35
A μm resist layer is formed as a mask material layer 42 on the conductive material layer 41 (see FIG. 11B). The mask material layer 42 absorbs the concave portion 41A of the conductive material layer 41 and has a substantially flat surface. Next, the mask material layer 42 is etched by RIE using an oxygen-based gas. The etching is completed when the flat surface of the conductive material layer 41 is exposed. As a result, the mask material layer 42 remains so as to bury the recess 41A of the conductive material layer 41 flat (see FIG. 12A).

[Step-440] Next, the conductive material layer 41, the mask material layer 42, and the adhesion layer 40 are etched to form a conical electron emission electrode 26 (see FIG. 12B). These layers are etched under anisotropic etching conditions in which the etching rate of the conductive material layer 41 is higher than the etching rate of the mask material layer 42. The etching conditions are illustrated in Table 1 below.

[Table 1] [Etching conditions for conductive material layer 41 etc.] SF ₆ flow rate: 150 SCCM O ₂ flow rate: 30 SCCM Ar flow rate: 90 SCCM Pressure: 35 Pa RF power: 0.7 kW (13.56 MHz)

[Step-450] After that, when the side wall surface of the opening provided in the insulating layer 23 inside the opening 25 is receded under isotropic etching conditions, the field emission device shown in FIG. Can be completed. The isotropic etching can be performed by dry etching using radicals as a main etching species, such as chemical dry etching, or wet etching using an etchant. As an etching solution, for example, 49
% Hydrofluoric acid aqueous solution and a 1: 100 (volume ratio) mixed solution of pure water can be used.

Here, the mechanism of forming the electron-emitting electrode 26 corresponding to the electron-emitting portion in [Step-440] will be described with reference to FIG. (A) of FIG.
FIG. 13B is a schematic diagram showing how the surface profile of the object to be etched changes at regular time intervals as the etching progresses. FIG. 13B shows the etching time and the etching target at the center of the opening. It is a graph which shows the relationship with the thickness of an object. The thickness of the mask material layer in the aperture center h _p, the height of the electron-emitting electrode 26 at the aperture center to h _e.

Under the etching conditions shown in Table 1, the etching rate of the conductive material layer 41 is naturally higher than the etching rate of the mask material layer 42 made of the resist material.
In a region where the mask material layer 42 does not exist, the conductive material layer 4
1 immediately starts to be etched, and the surface of the object to be etched quickly descends. On the other hand, in the region where the mask material layer 42 is present, the etching of the conductive material layer 41 thereunder does not start unless the mask material layer 42 is first removed. rate of decrease in the thickness of the object to be etched is slow (h _p decreasing segment), the first time when the mask material layer 42 is lost,
Rate of decrease in the thickness of the object to be etched is increased similarly to the nonexistent areas of the mask material layer 42 (h _e decreasing segment). h _p
The start time of the decreasing section is the latest at the center of the opening 25 where the mask material layer 42 has the maximum thickness, and the mask material layer 42
Of the opening 25 having a small thickness. Thus, a conical electron emission electrode 26 is formed.

The ratio of the etching rate of the conductive material layer 41 to the etching rate of the mask material layer 42 made of a resist material is referred to as a “resist selectivity” for convenience. The fact that the resist-to-resist selectivity is an important factor in determining the height and shape of the electron emission electrode 26 will be described with reference to FIG. FIG. 14A shows the case where the resist selectivity is relatively small, and FIG. 14C shows the case where the resist selectivity is relatively large, and FIG. In this case, the shape of the electron emission electrode 26 is shown. The larger the selectivity ratio with respect to the resist, the more the film thickness of the conductive material layer 41 is reduced compared to the film thickness of the mask material layer 42.
It can be seen that the electron emission electrode 26 is higher and sharper. The resist selectivity decreases as the ratio of the O ₂ flow rate to the SF ₆ flow rate increases. When using an etching apparatus that can change the incident energy of ions by using the substrate bias, the resist bias can be selected by increasing the RF bias power or decreasing the frequency of the AC power supply for bias application. The ratio can be reduced. The value of the resist selectivity is selected to be 1.5 or more, preferably 2 or more, and more preferably 3 or more.

In the above-described etching, it is naturally necessary to ensure a high selectivity with respect to the gate electrode 24 and the cathode electrode 22, but there is no problem at all under the conditions shown in Table 1. This is because aluminum constituting the gate electrode 24 and chromium constituting the cathode electrode 22 are hardly etched by the fluorine-based etching species, and under the above conditions, a selectivity to chromium of about 10 or more can be obtained. is there.

(Fifth Embodiment) A fifth embodiment is a modification of the fourth embodiment. In the fifth embodiment, the region of the conductive material layer shielded by the mask material layer can be narrower than in the manufacturing method in the fourth embodiment. That is, in the method for manufacturing the Spindt-type field emission device according to the fifth embodiment, the columnar portion and the enlarged portion communicating with the upper end of the columnar portion reflect the step between the upper end surface and the bottom surface of the opening. A substantially funnel-shaped concave portion is formed on the surface of the conductive material layer. In step (f), after forming a mask material layer on the entire surface of the conductive material layer, the mask material layer and the conductive material layer are formed on the surface of the support. By removing the mask material in a plane parallel to the surface, a mask material layer is left on the columnar portion. Note that the inspection method of the cathode panel for the display device can be substantially the same as in the first to third embodiments.
Detailed description is omitted.

Hereinafter, a method of manufacturing the Spindt-type field emission device according to the fifth embodiment will be described with reference to FIGS. 15 to 17, which are schematic partial end views of a support and the like.

[Step-500] First, the cathode electrode 22 is formed on the support 21. The conductive material layer for the cathode electrode including the cathode electrode 22 is made of, for example, a TiN layer (0.1 μm in thickness) and a Ti layer (5 n in thickness) by DC sputtering.
m), an Al—Cu layer (0.4 μm in thickness), a Ti layer (5 nm in thickness), a TiN layer (0.02 μm in thickness), and a Ti layer (0.02 μm) in this order to form a laminated film And
Subsequently, this laminated film is formed by patterning. In the drawing, the cathode electrode 22 is shown as a single layer. Next, an insulating layer 23 having a thickness of 0.7 μm is formed on the support 21 and the cathode electrode 22 by a plasma CVD method using TEOS (tetraethoxysilane) as a source gas. Next, after a 0.1 μm-thick aluminum layer is formed over the insulating layer 23 by a sputtering method, the aluminum layer is patterned, whereby the gate electrode 24 including the gate electrode conductive material layer can be formed.

Further, an etching stopper layer 43 made of, for example, SiO ₂ and having a thickness of 0.2 μm is formed on the entire surface. The etching stop layer 43 is not an indispensable member for the function of the field emission device, and plays a role of protecting the gate electrode 24 when the conductive material layer 41 is etched in a later step. still,
The etching conditions for the conductive material layer 41 correspond to the gate electrode 2.
4 can have a sufficiently high etching resistance, the etching stop layer 43 may be omitted. Then, R
According to the IE method, the etching stopper layer 43, the gate electrode 2
4. An opening 25 penetrating the insulating layer 23 and exposing the cathode electrode 22 at the bottom is formed. Thus, FIG.
(A) is obtained.

[Step-510] Next, an adhesion layer 40 made of tungsten, for example, having a thickness of 0.03 μm is formed on the entire surface including the inside of the opening 25 (see FIG. 15B). Next, a conductive material layer 41 for forming an electron emission electrode is formed on the entire surface including the inside of the opening 25. However, the conductive material layer 41 in the fifth embodiment is different from the recess 41A described in the fourth embodiment.
The thickness of the conductive material layer 41 is selected such that a deeper concave portion 41A is formed on the surface. That is, by appropriately setting the thickness of the conductive material layer 41, the stepped portion between the upper end surface and the bottom surface of the opening 25 is reflected, and the columnar portion 41B and the enlarged portion communicating with the upper end of the columnar portion 41B are reflected. A substantially funnel-shaped concave portion 41A composed of 41C and 41C can be formed on the surface of the conductive material layer 41.

[Step-520] Next, the entire surface of the conductive material layer 41 is formed to a thickness of about 0.5 μm by, for example, electroless plating.
A mask material layer 42 of m (Cu) is formed (see FIG. 16A). The electroless plating conditions are illustrated in Table 2 below.

[0079] [Table 2] Plating liquid: copper sulfate _{(CuSO 4 · 5H 2 O)} 7g / liter Formalin (37% HCHO) 20ml / l sodium hydroxide (NaOH) 10 g / l sodium potassium tartrate 20 g / l plating bath temperature ： 50 ℃

[Step-530] Next, the mask material layer 42
By removing the and the conductive material layer 41 in a plane parallel to the surface of the support 21, the mask material layer 42 is left on the columnar portion 41B (see FIG. 16B). This removal can be performed by a chemical mechanical polishing method (CMP method).

[Step-540] Next, under anisotropic etching conditions in which the etching rate of the conductive material layer 41 and the adhesion layer 40 is higher than the etching rate of the mask material layer 42,
The conductive material layer 41, the mask material layer 42, and the adhesion layer 40 are etched. As a result, an electron-emitting electrode 26 (corresponding to an electron-emitting portion) having a conical shape is formed in the opening 25 (see FIG. 17A). The electron emission electrode 26
When the mask material layer 42 remains at the tip of the mask material layer 42, the mask material layer 42 can be removed by wet etching using a dilute hydrofluoric acid aqueous solution.

[Step-550] After that, when the side wall surface of the opening provided in the insulating layer 23 inside the opening 25 is receded under isotropic etching conditions, FIG.
Is completed. Using such a field emission device, a display device can be formed in the same manner as described in Embodiment 1.

Incidentally, in the electron emission electrode 26 formed in the fifth embodiment, a sharper conical shape is achieved as compared with the electron emission electrode 26 formed in the fourth embodiment. This is due to the difference between the shape of the mask material layer 42 and the ratio of the etching rate of the conductive material layer 41 to the etching rate of the mask material layer 42. About this difference,
This will be described with reference to FIG. FIG. 18 is a diagram showing how the surface profile of the object to be etched changes at regular intervals. FIG. 18A shows a case where a mask material layer 42 made of copper is used. B) shows the case where a mask material layer 42 made of a resist material is used. For simplicity, it is assumed that the etching rate of the conductive material layer 41 and the etching rate of the adhesion layer 40 are equal to each other, and the illustration of the adhesion layer 40 is omitted in FIG.

When the mask material layer 42 made of copper is used (see FIG. 18A), the etching rate of the mask material layer 42 is sufficiently lower than the etching rate of the conductive material layer 41. The mask material layer 42 does not disappear therein, and therefore, the electron emission electrode 26 having a sharp tip can be formed. In contrast, when the mask material layer 42 made of a resist material is used (see FIG. 18B), the etching rate of the mask material layer 42 is not so slow as compared with the etching rate of the conductive material layer 41. In addition, the mask material layer 42 tends to disappear during the etching, so that the conical shape of the electron emission electrode 26 after the disappearance of the mask material layer tends to be blunted.

The mask material layer 4 remaining on the columnar portion 41B
2 has an advantage that the shape of the electron-emitting electrode 26 is hard to change even if the depth of the columnar portion 41B slightly changes.
That is, the depth of the columnar portion 41B can vary due to the thickness of the conductive material layer 41 and variations in step coverage.
Since the width of the columnar portion 41B is substantially constant irrespective of the depth, the width of the mask material layer 42 is also substantially constant, and there is no great difference in the shape of the finally formed electron emission electrode 26. On the other hand, in the mask material layer 42 remaining in the concave portion 41A, the width of the mask material layer also changes between the case where the concave portion 41A is shallow and the case where the concave portion 41A is deep. The thinner the thinner, the earlier the blunting of the conical shape of the electron emission electrode 26 begins. The electron emission efficiency of the field emission device is determined by the potential difference between the gate electrode and the cathode electrode, the distance between the gate electrode and the cathode electrode, the work function of the constituent materials of the electron emission portion, and the tip of the electron emission portion. It also changes depending on the shape. For this reason, it is preferable to select the shape and etching rate of the mask material layer as described above as necessary.

(Embodiment 6) Embodiment 6 is a modification of the Spindt-type field emission device manufacturing method of Embodiment 5. In the sixth embodiment, in the step (e), a substantially funnel-like shape including a columnar portion and an enlarged portion communicating with the upper end of the columnar portion reflecting a step between the upper end surface and the bottom surface of the opening portion. After forming a recess on the surface of the conductive material layer and forming a mask material layer on the entire surface of the conductive material layer in step (f),
By removing the mask material layer on the conductive material layer and in the enlarged portion, the mask material layer remains on the columnar portion. Note that the method of inspecting the cathode panel for the display device can be substantially the same as in the first to third embodiments, and a detailed description thereof will be omitted. Hereinafter, a method of manufacturing the Spindt-type field emission device according to the sixth embodiment will be described with reference to FIGS. 19 and 20, which are schematic partial end views of a support and the like.

[Step-600] First, the steps up to the formation of the mask material layer 42 shown in FIG. 16A are performed in the same manner as in [Step-500] to [Step-520] of the fifth embodiment. By removing only the mask material layer 42 on the conductive material layer 41 and in the enlarged portion 41C, the mask material layer 42 is left on the columnar portion 41B (see FIG. 19A). At this time,
For example, by performing wet etching using a diluted hydrofluoric acid aqueous solution, only the mask material layer 42 made of copper can be selectively removed without removing the conductive material layer 41 made of tungsten. Although the height of the mask material layer 42 remaining in the columnar portion 41B depends on the etching time, this etching time is not so long as the portion of the mask material layer 42 embedded in the enlarged portion 41C is sufficiently removed. Does not require strictness. This is because the discussion regarding the height of the mask material layer 42 is substantially the same as the discussion regarding the shallow depth of the columnar portion 41B described above with reference to FIG. This is because the shape of the formed electron emission electrode 26 is not significantly affected.

[Step-610] Next, the conductive material layer 41, the mask material layer 42, and the adhesive layer 40 are etched in the same manner as in the fifth embodiment, and the electron emission electrode as shown in FIG. 26 is formed. As a matter of course, the electron emission electrode 26 may have a conical shape as shown in FIG. 17A, but only the tip portion has a conical shape in FIG. 19B. Modified examples are shown. Such a shape may occur when the height of the mask material layer 42 buried in the columnar portion 41B is low or the etching rate of the mask material layer 42 is relatively high. No problem.

[Step-620] Thereafter, the side wall surface of the opening provided in the insulating layer 23 inside the opening 25 is receded under isotropic etching conditions to complete the field emission device shown in FIG. You. The isotropic etching may be the same as that described in Embodiment 4. Using such a field emission device, a display device can be formed in the same manner as described in Embodiment 1.

(Embodiment 7) The Spindt-type field emission device of Embodiment 7 is a modification of the field emission device of Embodiment 4. FIG. 21 shows a schematic partial end view of the field emission device of the seventh embodiment. The difference between the field emission device of the seventh embodiment and the field emission device of the fourth embodiment is that
The electron emission portion is configured by a base 50 and a conical electron emission electrode 26 stacked on the base 50.
Here, the base 50 and the electron emission electrode 26 are made of different conductive materials. Specifically, the base 50 is a member for adjusting the distance between the electron emission electrode 26 and the opening end of the gate electrode 24, and is made of a polysilicon layer containing impurities. The electron emission electrode 26 corresponding to the electron emission portion is made of tungsten, and has a conical shape, more specifically, a conical shape. The base 5
An adhesion layer 40 made of TiN is formed between 0 and the electron emission electrode 26. Note that the adhesion layer 40 is not a component essential for the function of the electron emission portion, but is formed for manufacturing reasons. The opening 25 is formed by digging the insulating layer 23 from directly below the gate electrode 24 to the upper end of the base 50.

Incidentally, with respect to the inspection method of the cathode panel for the display device, the first to third embodiments are substantially applied.
Therefore, detailed description is omitted. Hereinafter, the method for manufacturing the field emission device according to the seventh embodiment will be described with reference to FIGS.
This will be described with reference to FIG.

[Step-700] First, the steps up to the formation of the opening 25 are performed in the same manner as in [Step-400] of the fourth embodiment. Subsequently, a conductive material layer 50A for forming a base is formed on the entire surface including the inside of the opening 25. The conductive material layer 50A is composed of, for example, a polysilicon layer containing phosphorus (P) as an impurity on the order of 10 ¹⁵ / cm ³ , and can be formed by a plasma CVD method. Next, a flattening layer 51 made of a resist layer is formed on the entire surface by spin coating so that the surface is substantially flat (see FIG. 22A).
Next, both layers are etched under conditions that the etching rates of the planarization layer 51 and the conductive material layer 50A are both substantially equal, and the bottom of the opening 25 is buried with the base 50 having a flat upper surface (FIG. 2).
2 (B)). Etching can be performed by an RIE method using an etching gas containing a chlorine-based gas and an oxygen-based gas. The surface of the conductive material layer 50A is planarized
Since etching is performed after flattening in step 1,
The upper surface of the base 50 becomes flat.

[Step-710] Next, the adhesion layer 40 is formed on the entire surface including the remaining portion of the opening 25, and further, the conductive material layer 41 for forming an electron emission electrode is formed on the entire surface including the remaining portion of the opening 25.
Is formed, and the remaining portion of the opening 25 is embedded with the conductive material layer 41 (see FIG. 23A). The adhesion layer 40 is a TiN layer having a thickness of 0.07 μm formed by a sputtering method.
The conductive material layer 41 is a 0.6 μm thick tungsten layer formed by a low pressure CVD method. On the surface of the conductive material layer 41, a concave portion 41A is formed reflecting a step between the upper end surface and the bottom surface of the opening 25.

[Step-720] Next, a mask material layer 42 made of a resist layer is formed on the entire surface of the conductive material layer 41 by spin coating so that the surface is substantially flat (see FIG. 23B). ). The mask material layer 42 has a flat surface by absorbing the recess 41A on the surface of the conductive material layer 41. Next, the mask material layer 42 is made of R using an oxygen-based gas.
Etching is performed by the IE method (see FIG. 24A).
The etching is completed when the flat surface of the conductive material layer 41 is exposed. As a result, the mask material layer 42 is left flat in the recess 41A of the conductive material layer 41, and the mask material layer 42
Is formed so as to shield the region of the conductive material layer 41 located at the center of the opening 25.

[Step-730] Next, the conductive material layer 41, the mask material layer 42, and the adhesion layer 40 are etched together in the same manner as in [Step-440] of the fourth embodiment.
Based on the mechanism described above, the electron emission electrode 26 having a conical shape corresponding to the magnitude of the resist selection ratio and the adhesion layer 40 are formed, and the electron emission portion is completed (see FIG. 24B). Thereafter, when the side wall surface of the opening provided in the insulating layer 23 inside the opening 25 is receded, the field emission device shown in FIG. 21 can be obtained.

(Eighth Embodiment) A Spindt-type field emission device according to the eighth embodiment is a modification of the field emission device according to the fifth embodiment. FIG. 26B is a schematic partial end view of the field emission device according to the eighth embodiment. The field emission device according to the eighth embodiment is different from the field emission device according to the mode of the fifth embodiment in that an electron emission portion is stacked on the base 50 and the base 50 similarly to the field emission device according to the seventh embodiment. And a conical electron emission electrode 26 formed as described above. Here, the base 50 and the electron emission electrode 26 are made of different conductive materials. Specifically, the base 50 is a member for adjusting the distance between the electron emission electrode 26 and the opening end of the gate electrode 24, and is made of a polysilicon layer containing impurities. The electron emission electrode 26 is made of tungsten and has a conical shape, more specifically, a conical shape. Note that an adhesion layer 40 made of TiN is formed between the base 50 and the electron emission electrode 26.
Note that the adhesion layer 40 is not a component essential for the function of the electron emission portion, but is formed for manufacturing reasons. Insulating layer 2
An opening 25 is formed by excavating 3 from immediately below the gate electrode 24 to the upper end of the base 50.

It should be noted that the inspection method of the cathode panel for the display device is substantially the same as the first to third embodiments.
Therefore, detailed description is omitted. Hereinafter, a method for manufacturing a field emission device according to the eighth embodiment will be described with reference to FIGS. 25 and 26 which are schematic partial end views of a support and the like.

[Step-800] First, the steps up to the formation of the opening 25 are performed in the same manner as in [Step-400] of the fourth embodiment. Next, a conductive material layer for forming a base is formed on the entire surface including the inside of the opening 25, and the conductive material layer is etched, so that the base 50 filling the bottom of the opening 25 can be formed. Although the illustrated base 50 has a flattened surface, the surface may be concave. The base 50 having a flattened surface can be formed by the same process as [Step-700] in the seventh embodiment. Further, the adhesive layer 4 is formed on the entire surface including the remaining portion of the opening 25.
0 and a conductive material layer 41 for forming an electron emission electrode are sequentially formed. At this time, the columnar portion 41B reflecting the step between the upper end surface and the bottom surface of the remaining portion of the opening 25 and the columnar portion 41B
A substantially funnel-shaped concave portion 41A composed of an enlarged portion 41C communicating with the upper end of the conductive material layer 41 is formed on the surface of the conductive material layer 41.
The thickness of the conductive material layer 41 is selected. Next, the conductive material layer 4
A mask material layer 42 is formed on 1. This mask material layer 42 is formed using, for example, copper. (A) of FIG.
Indicates that the process up to this point has been completed.

[Step-810] Next, the mask material layer 42
And the conductive material layer 41 are removed in a plane parallel to the surface of the support 21 to leave the mask material layer 42 on the columnar portion 41B (see FIG. 25B). This removal can be performed by a chemical mechanical polishing method (CMP method) as in [Step-530] of the fifth embodiment.

[Step-820] Next, when the conductive material layer 41, the mask material layer 42, and the adhesion layer 40 are etched,
The electron emission electrode 26 having a conical shape corresponding to the magnitude of the resist selectivity is formed based on the above-described mechanism. The etching of these layers is performed according to [Step-54 of Embodiment 5].
0]. An electron emission portion is formed by the electron emission electrode 26 and the base 50, and the adhesion layer 40 remaining between the electron emission electrode 26 and the base 50.
Of course, the electron emitting portion may have a conical shape as a whole. However, FIG.
5 shows a state in which the bottom portion is left to be embedded. This shape corresponds to the mask material layer 4 embedded in the columnar portion 41B.
2 may be low or the etching rate of the mask material layer 42 may be relatively high, but this does not hinder the function as the electron emitting portion.

[Step-830] Then, when the side wall surface of the insulating layer 23 is retreated inside the opening 25 under isotropic etching conditions, the field emission device shown in FIG. 26B is completed. . The isotropic etching conditions may be the same as those described in Embodiment 4. Using such a field emission device, a display device can be formed in the same manner as described in Embodiment 1.

Ninth Embodiment A ninth embodiment is a modification of the Spindt-type field emission device manufacturing method of the sixth embodiment. The field emission device according to the ninth embodiment is different from the field emission device according to the sixth embodiment in that the electron emission section is stacked on the base 50 and the base 50 similarly to the field emission device according to the seventh embodiment. And a conical electron emission electrode 26. Hereinafter, a method of manufacturing the Spindt-type field emission device according to the ninth embodiment will be described with reference to FIG. 27 which is a schematic partial end view of a support and the like.

[Step-900] The steps up to the formation of the mask material layer 42 are performed in the same manner as in [Step-800] of the eighth embodiment.
After that, only the mask material layer 42 on the conductive material layer 41 and in the enlarged portion 41B is removed, thereby leaving the mask material layer 42 on the columnar portion 41B (see FIG. 27). For example, by performing wet etching using a diluted hydrofluoric acid aqueous solution, only the mask material layer 42 made of copper can be selectively removed without removing the conductive material layer 41 made of tungsten. Subsequent processes such as etching of the conductive material layer 41 and the mask material layer 42 and isotropic etching of the insulating layer 23 can be performed in the same manner as in the eighth embodiment.

(Embodiment 10) In Embodiment 10, the structure and manufacturing process of the field emission device are different from those of Embodiment 1. Embodiment 1
As shown in FIG. 28A, a schematic partial end view of the edge type field emission device at (0), (A) a first insulating layer 73 formed on a support 71, (B) a first insulating layer 73, An electron emitting layer 74 formed on the insulating layer 73, (C) a second insulating layer 75 formed on the first insulating layer 73 including the electron emitting layer 74,
(D) a gate electrode 76 formed on the second insulating layer 75,
(E) At least an end portion 74 </ b> A (electron emission) of the electron emission layer 74, which includes at least an opening 78 penetrating the gate electrode 76, the second insulating layer 75 and the electron emission layer 74, and protrudes from a wall surface of the opening 78. (Corresponding to a part). In addition, the edge type field emission device having such a configuration is
For convenience, it is called an edge type field emission device having the first structure. 1
One electron emission region 12 can be composed of a plurality (for example, about several tens to several hundreds) of edge-type field emission devices.

In the edge-type field emission device having the first structure, a voltage is applied between the electron-emitting layer 74 and the gate electrode 76, and the end 74A of the electron-emitting layer 74 and the gate electrode 76.
Is short-circuited, the short-circuited portion is evaporated or vaporized based on the generated heat, so that the electron-emitting portion and the gate electrode are rendered non-conductive. Evaporation or vaporization may occur only at the gate electrode 76, only at the end 74A of the electron emission layer 74A, or at both the gate electrode 76 and the end 74A of the electron emission layer 74. May be. Alternatively, with the cathode panel immersed in a non-conductive liquid, the electron emission layer 74 and the gate electrode 7
6 is applied to the end 74A of the electron emission layer 74.
And the gate electrode 76 are in a short-circuit state due to the conductive foreign matter, the generated heat evaporates the liquid, and the resulting bubbles remove the conductive foreign matter. Is in a non-conductive state.

Alternatively, FIG. 28B is a schematic partial end view of a modification of the edge-type field emission device. The edge-type field emission device includes (A) a first gate electrode 72 formed on a support 71, and (B) a first gate electrode 72.
A first insulating layer 73 formed on a support 71 including the
(C) an electron emission layer 74 formed on the first insulating layer 73;
(D) a second insulating layer 75 formed on the first insulating layer 73 including the electron emitting layer 74, (E) a second gate electrode 77 formed on the second insulating layer 75, and (F) An opening 78 penetrating through the second gate electrode 77, the second insulating layer 75, the electron emission layer 74, and the first insulating layer 73, and having a bottom exposed at the surface of the first gate electrode 72; Electrons are emitted from an end portion 74A (corresponding to an electron emission portion) of the electron emission layer 74 protruding from. The gate electrode includes a first gate electrode 72 and a second gate electrode 77. FIG. 29 is a schematic perspective view in which the support 71 and the like near the opening 78 are partially cut and exposed. Here, the schematic partial end view shown in FIG. 28B is a line A-
It is an end elevation along A. The edge-type field emission device having such a configuration is referred to as an edge-type field emission device having a second structure for convenience. In the edge type field emission device having the second structure, since the first gate electrode 72 is provided below the electron emission layer 74, the opening 78 is compared with the edge type field emission device having the first structure. An electric field with a higher intensity can be formed in the vicinity of the end 74A of the electron emission layer 74 protruding from the wall surface. One electron emission region 12 can be composed of a plurality (for example, about several tens to several hundreds) of edge type field emission devices.

In the edge type field emission device having the second structure, a voltage is applied between the electron emission layer 74 and the first gate electrode 72 and the second gate electrode 77, and the edge of the electron emission layer 74 is removed. When the short circuit occurs between the first gate electrode 74A and the first gate electrode 72 and the second gate electrode 77, specifically, the electron emission layer 7
4 and the first gate electrode 72, a short circuit between the electron emission layer 74 and the second gate electrode 77, or between the first gate electrode 72 and the second gate electrode 77. When the short circuit occurs, the short-circuited portion is evaporated or vaporized based on the generated heat, so that the gap between the electron emitting portion and the gate electrode is rendered non-conductive. The evaporation or vaporization is performed if at least one of the second gate electrode 77, the end 74A of the electron emission layer 74A, and the first gate electrode 72 is generated so that the gap between the electron emission portion and the gate electrode is rendered non-conductive. Good. Alternatively, while the cathode panel is immersed in a non-conductive liquid, a voltage is applied between the electron emission layer 74 and the first gate electrode 72 and the second gate electrode 77,
When the end 74A of the electron emission layer 74 is short-circuited between the first gate electrode 72 and the second gate electrode 77 by a conductive foreign substance, the generated heat causes the liquid to evaporate, and the resulting bubbles cause the liquid to evaporate. The conductive foreign matter is removed, so that the space between the electron-emitting portion and the gate electrode is rendered non-conductive.

One electron emission region 12 composed of an edge type field emission device having the structure shown in FIG.
In (2), a desired number of the electron emission layers 74 of the edge-type field emission device constituting the electron emission region 12 are present in the conductive material layer for the electron emission layer patterned in a stripe shape. Specifically, the conductive material layer for the electron-emitting layer in a stripe shape itself corresponds to the electron-emitting layer 74, and the opening 7.
The region of the conductive material layer for the electron emission layer located near 8 corresponds to the electron emission layer 74. Further, the gate electrode 7 of the edge type field emission device constituting the electron emission region 12 is provided on the gate electrode conductive material layer patterned in a stripe shape.
There are as many 6 as desired. Specifically, the conductive material layer for the gate electrode in the form of a stripe is the gate electrode 7 itself.
6, a region of the gate electrode conductive material layer located near the opening 78 corresponds to the gate electrode 76. Then, a region where the stripe-shaped cathode electrode conductive material layer and the stripe-shaped gate electrode conductive material layer overlap,
It corresponds to each electron emission region 12. The direction in which the stripe-shaped conductive material layer for the electron emission layer extends (referred to as a first direction)
Is different from the direction in which the stripe-shaped conductive material layer for a gate electrode extends (referred to as a second direction). Preferably, the second direction is perpendicular to the first direction.

Further, in one electron emission region 12 composed of the edge type field emission device having the structure shown in FIG. 28B, the first gate electrode conductive material layer patterned in a stripe shape. The electron emission region 12
Gate electrode 72 of edge type field emission device constituting
Are present in a desired number. Specifically, the conductive material layer for the first gate electrode in a stripe shape itself corresponds to the first gate electrode 72, and the region of the conductive material layer for the first gate electrode located at the bottom of the opening 78 is the first gate electrode 72. This corresponds to the electrode 72. In addition, a desired number of the electron emission layers 74 of the edge type field emission device constituting the electron emission region 12 are present in the conductive material layer for the electron emission layer patterned in a stripe shape. Specifically, the conductive material layer for an electron emission layer in a stripe shape itself corresponds to the electron emission layer 74, and the region of the conductive material layer for the electron emission layer located near the opening 78 corresponds to the electron emission layer 74. I do. Further, a desired number of the second gate electrodes 77 of the edge type field emission device constituting the electron emission region 12 are present in the conductive material layer for the second gate electrode patterned in a stripe shape. Specifically, the stripe-shaped conductive material layer for the second gate electrode itself corresponds to the second gate electrode 77, and the region of the conductive material layer for the second gate electrode located near the opening 78 is the second gate electrode 77. This corresponds to the electrode 77. The direction in which the striped conductive material layer for an electron emission layer extends (referred to as a first direction) is different from the direction in which the striped conductive material layer for a first gate electrode extends (referred to as a second direction). The second direction is the first
Is preferably perpendicular to the direction. The extending direction of the stripe-shaped second gate electrode conductive material layer is the first direction.
Or the second direction, but preferably extends in the first direction from the viewpoint of simplification of the configuration.

The method of inspecting a cathode panel for a display device can be substantially the same as in the first to third embodiments, and therefore, detailed description is omitted. The method of manufacturing the edge-type field emission device shown in FIG. 28B is described below with reference to FIG.
This will be described with reference to FIGS.

[Step-1000] First, a conductive material layer for a first gate electrode made of tungsten having a thickness of about 0.2 μm is formed on a support 71 made of, for example, a glass substrate by sputtering, and then lithography is performed. The first gate electrode 72 is formed by patterning the first gate electrode conductive material layer by the technique and the dry etching technique (see FIG. 30A). The patterned first gate electrode conductive material layer has a stripe shape.

[Step-1010] Next, a first insulating layer 73 made of, for example, SiO _{2 having} a thickness of about 0.3 μm is formed on the entire surface.
To form Further, a conductive material layer for an electron emission layer made of tungsten is formed on the first insulating layer 23 to a thickness of 0.2 μm, and then patterned into a predetermined shape to form an electron emission layer 74 (FIG. 30). (B)). The patterned conductive material layer for an electron emission layer has a stripe shape.

[Step-1020] Next, for example, S
A second insulating layer 75 made of iO ₂ is formed to a thickness of, for example, about 0.7 μm. Further, a second gate electrode conductive material layer made of aluminum having a thickness of about 0.2 μm is formed on the second insulating layer 75, and the second gate electrode 77 is obtained by performing a predetermined patterning. Yes (Figure 3
0 (C)). The patterned second gate electrode conductive material layer has a stripe shape.

[Step-1030] Thereafter, a resist layer 79 is formed on the entire surface, and a resist opening 79A is formed in the resist layer 79 so as to partially expose the surface of the second gate electrode 77. The planar shape of the resist opening 79A is rectangular, and the long side of the rectangular is approximately 100 μm, and the short side is several μm to 10 μm. Subsequently, the second gate electrode 77 exposed at the bottom of the resist opening 79A is
An opening 78A is formed by anisotropic etching by an IE (reactive ion etching) method (FIG. 31A).
reference).

[Step-1040] Next, the second insulating layer 75 exposed at the bottom of the opening 78A is isotropically etched to form an opening 78B (see FIG. 31B).
Since the second insulating layer is formed using SiO ₂ , wet etching using a buffered hydrofluoric acid aqueous solution is performed. The wall surface of the opening 78B recedes from the end face of the opening 78A. The amount of retreat at this time can be controlled by the length of the etching time. Wet etching is performed until the lower end of the opening 78B is retracted from the end face of the opening 78A.

[Step-1050] Next, the electron emission layer 74 exposed on the bottom surface of the opening 78B is dry-etched under the condition of using ions as a main etching species (see FIG. 32A). In dry etching using ions as a main etching species, charged particles can be accelerated by applying a bias voltage to an object to be etched or by using an interaction between a plasma and a magnetic field. As the etching proceeds, the processed surface of the object to be etched becomes a vertical wall. However, in this [Step-1050], a slight incident component having an angle other than vertical exists in the main etching species in the plasma, and the oblique incident component is also scattered at the end of the opening 78A. As a result, the main etching species enters the exposed surface of the electron-emitting layer 74 at a certain probability into a region where ions should not reach due to being blocked by the opening 78A. At this time, the main etching species having a smaller incident angle with respect to the normal line of the electron emission layer 74 has a higher incidence probability, and the main etching species having a larger incident angle has a lower incidence probability. Therefore, although the position of the upper end of the opening 78C formed in the electron emission layer 74 is substantially aligned with the lower end of the opening 78B, the position of the lower end of the opening 78C is projected from the upper end. Become. That is, the thickness of the electron emission layer 74 becomes thinner toward the tip in the protruding direction, and the end is sharpened. By using SF ₆ as an etching gas, favorable processing of the electron emission layer 74 can be performed.

[Step-1060] Next, the first insulating layer 73 exposed on the bottom surface of the opening 78C is isotropically etched to form an opening 78D, thereby completing the opening 78 ((FIG. 32) B)). As in the case of the above-described second insulating layer 75, wet etching using a buffered hydrofluoric acid aqueous solution is performed. The wall surface of the opening 78D is retracted from the lower end of the opening 78C. The amount of retreat at this time can be controlled by the length of the etching time. At this time, the wall surface of the previously formed opening 78B further retreats. The opening 78
When the resist layer 79 is removed after the completion of the above, a cathode panel having an edge-type field emission device having the structure shown in FIG. 28B can be obtained.

(Embodiment 11) FIG. 33 is a schematic partial end view of a flat field emission device. This planar type field emission device includes (A) an electron emitting layer 84 formed on a support 81, (B) an insulating layer 85 formed on the support 81 including the electron emitting layer 84, and (C) an insulating layer 85 formed on the support 81. A gate electrode 86 formed on the layer 85; and (D) an opening 88 that penetrates through the gate electrode 86 and the insulating layer 85 and exposes the surface of the electron emission layer 84 at the bottom. Electrons are emitted from the surface (corresponding to the electron emission portion) of the electron emission layer 84 exposed to the light. One electron emission region 12 can be composed of one or a plurality of planar field emission devices.

In one electron emission region 12 composed of a flat field emission device having the structure shown in FIG. 33, the electron emission region 12 is formed on a conductive material layer for an electron emission layer patterned in a stripe shape. The desired number of the electron emission layers 84 of the planar field emission device are present.
Specifically, the conductive material layer for the electron emission layer in the form of a stripe corresponds to the electron emission layer 84 itself, and the region of the conductive material layer for the electron emission layer located at the bottom of the opening 88 corresponds to the electron emission layer 8.
This corresponds to 4. Furthermore, a desired number of gate electrodes 86 of the edge-type field emission device constituting the electron emission region 12 are present in the gate electrode conductive material layer patterned in a stripe shape. Specifically, the stripe-shaped conductive material layer for the gate electrode itself corresponds to the gate electrode 86, and the region of the conductive material layer for the gate electrode located near the opening 88 corresponds to the gate electrode 86. The direction in which the striped conductive material layer for an electron emission layer extends (referred to as a first direction) is different from the direction in which the striped conductive material layer for a gate electrode extends (referred to as a second direction). Preferably, the second direction is perpendicular to the first direction.

In the flat field emission device, a voltage is applied between the electron emission layer 84 and the gate electrode 86 of the cathode panel, and the electron emission layer 84 and the gate electrode 86 are short-circuited. At this time, the short-circuited portion is evaporated or vaporized based on the generated heat, so that the gap between the electron-emitting portion and the gate electrode is rendered non-conductive. Evaporation or vaporization may occur only on the surface of the electron emission layer 84 exposed at the bottom of the opening 88, may occur only on the gate electrode 24, or may occur on both. Alternatively, while the cathode panel is immersed in a non-conductive liquid, a voltage is applied between the electron emitting layer 84 and the gate electrode 86, and a conductive foreign substance is applied between the electron emitting layer 84 and the gate electrode 86. When in a short-circuit state, the generated heat causes the liquid to evaporate, and the resulting air bubbles to remove conductive foreign substances, thereby bringing the gap between the electron-emitting portion and the gate electrode into a non-conductive state.

The method of inspecting a cathode panel for a display device can be substantially the same as in the first to third embodiments, and therefore, detailed description is omitted. The manufacturing method of the flat field emission device shown in FIG.
This will be described with reference to FIG. 34 which is a schematic partial end view of a support and the like.

[Step-1100] First, a conductive material layer for an electron emitting layer made of tungsten having a thickness of about 0.2 μm is formed on a support 81 made of, for example, a glass substrate by sputtering. The conductive material layer is patterned to form an electron emission layer 84. The patterned conductive material layer for an electron emission layer has a stripe shape. Next, the insulating layer 85 is formed on the support 81 including the electron emitting layer 84.
To form For example, TEOS (tetraethoxysilane)
An SiO ₂ layer is formed to a thickness of about 1 μm by a CVD method used as a source gas. Further, a gate electrode conductive material layer made of, for example, aluminum having a thickness of about 0.2 μm is formed on the insulating layer 85 and patterned to form a gate electrode 86. The patterned gate electrode conductive material layer has a stripe shape. FIG. 34A shows a state in which the processes up to this point have been completed.

[Step-1110] Next, a resist layer 89 is formed on the entire surface, and a resist opening 8 is formed on the resist layer 89 so as to partially expose the surface of the gate electrode 86.
9A is formed. The planar shape of the resist opening 89A is:
For example, it is circular. Subsequently, the gate electrode 86 exposed at the bottom of the resist opening 89A is anisotropically etched by, eg, RIE.

[Step-1120] Next, the insulating layer 85 exposed inside the resist opening 89A is isotropically etched to form an opening 88 (see FIG. 34C).
Since the insulating layer 85 is formed using SiO ₂ , wet etching using a buffered hydrofluoric acid aqueous solution is performed. The wall surface of the insulating layer 85 recedes from the tip of the gate electrode 86, and the amount of retreat at this time can be controlled by the length of the etching time. Thus, a cathode panel on which the flat field emission device shown in FIG. 33 is formed can be obtained.

The present invention has been described based on the embodiments of the present invention, but the present invention is not limited to these embodiments.

The electron emission electrode 26 (corresponding to an electron emission portion) in the Spindt-type field emission device is composed of tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), chromium ( It can be formed using a metal such as Cr), aluminum (Al), copper (Cu), or an alloy or compound containing these metal elements. Among them, it can be formed using a so-called high melting point metal or an alloy thereof. preferable. The electron emission electrode 26 can be formed by, for example, an evaporation method or a sputtering method. The adhesion layer 40 and the base 50 in the Spindt-type field emission device are made of tungsten (W), titanium (Ti), molybdenum (Mo), tantalum (Ta), and hafnium (Hf).
Can be formed by using a so-called high melting point metal or an alloy or compound containing these metal elements, or silicon containing impurities (for example, amorphous silicon or polysilicon). Among them, a so-called high melting point metal or an alloy thereof, or It is preferable to use amorphous silicon or polysilicon containing impurities. It is preferable that the material forming the adhesion layer 40 and the base 50 be more easily oxidized than the material forming the electron emission electrode 26.

The electron emission layers 74 and 84 in the edge type field emission device or the flat type field emission device are typically made of tungsten (W), tantalum (Ta), titanium (Ti), molybdenum (Mo), chromium ( Cr), or an alloy or compound thereof (for example, a nitride such as TiN, or a silicide such as WSi ₂ , MoSi ₂ , TiSi ₂ , or TaSi ₂ ), or a semiconductor such as diamond. As a method for forming the electron emission layers 74 and 84, a normal thin film manufacturing process such as a vapor deposition method, a sputtering method, a CVD method, an ion plating method, a printing method, and a plating method can be used. The thickness of the electron emission layers 74 and 84 is approximately 0.05 to 0.5 μm, preferably 0.1 to 0.5 μm.
It is desirable to set the range to 3 μm, but it is not limited to such a range. Even if the material forming the electron emission layers 74 and 84 is the same as the material forming the gate electrode,
It may be different.

The cathode electrode 22 and the gate electrode 24 in the Spindt field emission device, the gate electrode 76 or the first gate electrode 72 in the edge field emission device,
Aluminum (A) is used as a material for forming the second gate electrode 77 and the gate electrode 86 in the planar field emission device.
l) and its alloys, indium (In) and its alloys can be exemplified. Further, depending on the combination with the material constituting the electron emission electrode or the electron emission layer, tungsten (W), niobium (Nb), tantalum (Ta), molybdenum (Mo), chromium (Cr), copper (Cu) ), Alloys or compounds containing these metal elements, semiconductors such as silicon (Si), diamond, and carbon. The materials constituting these electrodes may be the same material, the same material, or different materials. As a method for forming these electrodes, an ordinary thin film production process such as a vapor deposition method, a sputtering method, a CVD method, an ion plating method, a printing method, a plating method, or the like can be used.

The constituent materials of the insulating layer 23, the first insulating layer 73, the second insulating layer 75, and the insulating layer 85 are SiO ₂ , Si
N, SiON, or cured glass paste can be used alone or appropriately laminated.
Known processes such as a method, a coating method, a sputtering method, and a printing method can be used.

The supports 21, 71 and 81 need only be made of a material having an insulating property at least on the surface. A glass substrate, a glass substrate having an insulating film formed on the surface, a quartz substrate, and an insulating film formed on the surface are provided. Examples include a quartz substrate formed and a semiconductor substrate having an insulating film formed on a surface thereof. The substrate 61 that constitutes the anode panel 60 also needs to have at least the surface made of a material having an insulating property, and includes a glass substrate, a glass substrate having an insulating film formed on the surface, a quartz substrate, and an insulating film formed on the surface. A formed quartz substrate and a semiconductor substrate having an insulating film formed on its surface can be given, and transparency is required depending on the configuration of the display device.

In the present invention, an interlayer insulating layer may be further formed on the entire surface including the gate electrode and the second gate electrode, and a focus electrode may be formed on the interlayer insulating layer. For example, an example in which a focus electrode is incorporated in an edge type field emission device having the second structure is shown in a schematic partial end view of FIG. In this field emission device,
An interlayer insulating layer 94 is further formed on the entire surface including on the second gate electrode 77.
Are formed, and a focus electrode 95 is formed on the interlayer insulating layer 94. The opening 78 is formed in the interlayer insulating layer 94.
Is provided with a second opening 96 that communicates with the second opening 96. Note that the focus electrode 95 does not necessarily need to be provided for each field emission device. For example, by disposing the focus electrode 95 along a predetermined arrangement direction of the field emission devices, a common convergence effect is provided for a plurality of field emission devices. You can also. Therefore, the second opening 96 provided in the interlayer insulating layer 94 does not necessarily need to be provided in the material layer forming the focus electrode 95. Since the potential of the focus electrode 95 is generally similar to or the same as the potential of the electron emission layer 74, if the opening end of the focus electrode 95 protrudes toward the inside of the second opening 96, the focus electrode 95 Electron emission may occur from 95 toward the first gate electrode 72 or the second gate electrode 77. Therefore, it is particularly desirable that the focus electrode 95 be provided so as not to protrude into the second opening 96. It is particularly preferable that the tip of the second gate electrode 77 protrude from the interlayer insulating layer 94 from the viewpoint of increasing the electric field strength near the end 74A protruding from the opening 78 of the electron emission layer 74. The planar shape of the second opening 96 may be congruent, similar to, or different from the planar shape of the opening 78 depending on the configuration of the focus electrode 95.

As shown in FIG. 36A, a schematic partial end view of the field emission device, and FIG. 36B, a schematic exploded perspective view, show a main wiring having a so-called shunt structure. 2
A configuration including 2C and 22D may be employed. That is,
In [Step-100], a cathode conductive material layer made of, for example, polysilicon is formed on a support 21 made of, for example, a glass substrate by a plasma CVD method, and then the cathode is formed based on a lithography technique and a dry etching technique. The electrode conductive material layer is patterned to form a cathode electrode group having a rectangular planar shape, a branch wiring 22B, and a main wiring 22C. Thereafter, an insulating layer 23 'made of SiO _{2 is} formed on the entire surface by a CVD method, and a hole is formed in the insulating layer 23' above the main wiring 22C. Thereafter, for example, an aluminum-based alloy layer is formed on the insulating layer 23 'including the inside of the hole by a sputtering method, and the aluminum-based alloy layer is patterned to form the main wiring 22D also on the insulating layer 23'. . The main wiring 22D is electrically connected to the main wiring 22C by a hole and an aluminum-based alloy layer filling the hole (these are collectively referred to as contact holes). Next, an insulating layer 53 ″ is formed on the entire surface, and a conductive material layer for a gate electrode (for example, an aluminum layer) is sequentially formed by a sputtering method. Then, the conductive material layer for a gate electrode is formed by a lithography technique and a dry etching technique. A gate electrode group formed of a stripe-shaped conductive material for a gate electrode and having an opening 25 is formed by patterning the insulating layer 23 ″, 2 using the gate electrode group as an etching mask.
An opening 25 having a diameter of, for example, about 1 μm is formed in 3 ′.

The trunk wiring 2 having the shunt structure as described above
By employing 2C and 22D, it is possible to avoid occurrence of signal delay and the like. Such a shunt structure is
The present invention can also be applied to a cathode panel having an electron emission region 12 composed of an edge type field emission device or a flat type field emission device.

Further, as shown in a schematic partial end view in FIG. 37A and a schematic exploded perspective view in FIG. 37B, a main wiring 22C is formed on the support 21. Instead, the trunk wiring 22D is formed only on the insulating layer 23 ', and the branch wiring 22D formed on the support 21 is formed via the contact hole.
B and the main wiring 22D may be connected.

[0135]

According to the present invention, when a short-circuit portion exists, a current flows between the electron-emitting portion and the gate electrode, so that the gap between the electron-emitting portion and the gate electrode becomes non-conductive. As a result of substantially removing or restoring the defective field emission device, a problem arises in that a complete display of the entire electron emission region including the defective field emission device or the entire row of the stripe-shaped electron emission region cannot be performed. Can be avoided. As a result, it is possible to improve the production yield and the productivity of the cathode panel for the cold cathode field emission display or the cold cathode field emission display. Further, it is not necessary to manufacture the field emission device and the cathode panel in an environment with a special cleanliness, and a special cleaning device and a repair device for the field emission device are not required.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram of a cold cathode field emission display to which a Spindt-type field emission device is applied.

FIG. 2 is a schematic exploded perspective view of a part of a cathode panel and an anode panel in a cold cathode field emission display to which a Spindt-type field emission device is applied.

FIG. 3 is a schematic partial perspective view of a cathode panel, and an exploded perspective view showing an arrangement of a cathode electrode, a gate electrode, an electron emission electrode, and the like.

FIG. 4 is a schematic diagram of a field emission device in which an electron emission portion and a gate electrode are in a short-circuit state, and a schematic diagram of a field emission device in which the electron emission portion and the gate electrode are in a non-conductive state.

FIG. 5 is a schematic diagram of a field emission device in which an electron emission portion and a gate electrode are in a short-circuit state, and a schematic diagram of a field emission device in which the electron emission portion and the gate electrode are in a non-conductive state.

FIG. 6 is a diagram schematically showing a state in which a part of the gate electrode has been evaporated by the method of removing a short-circuit portion according to the first embodiment of the present invention;

FIG. 7 is a schematic partial end view of a support and the like for describing a method for manufacturing a Spindt-type field emission device.

FIG. 8 is a schematic partial end view of a support and the like for explaining the method for manufacturing the Spindt-type field emission device, following FIG. 7;

FIG. 9 is a schematic partial end view showing a Spindt-type field emission device according to Embodiment 4 of the present invention.

FIG. 10 is a schematic partial end view of a support and the like for describing a method of manufacturing the Spindt-type field emission device shown in FIG. 9;

11 is a schematic partial end view of a support and the like for explaining the method for manufacturing the Spindt field emission device shown in FIG. 9 following FIG. 10;

12 is a schematic partial end view of a support and the like for explaining the method for manufacturing the Spindt field emission device shown in FIG. 9, following FIG. 11;

FIG. 13 is a view for explaining a mechanism for forming a conical electron emission electrode.

FIG. 14 is a diagram schematically showing a relationship between a resist selectivity and the height and shape of an electron emission electrode.

FIG. 15 is a schematic partial end view of a support and the like for describing a method for manufacturing a Spindt-type field emission device according to a fifth embodiment of the present invention.

FIG. 16 is a schematic partial end view of a support and the like for explaining the method for manufacturing the Spindt-type field emission device according to the fifth embodiment of the present invention, following FIG.

FIG. 17 is a schematic partial end view of the support and the like for explaining the method for manufacturing the Spindt-type field emission device according to the fifth embodiment of the present invention, following FIG. 16;

FIG. 18 is a diagram showing how a surface profile of an object to be etched changes at regular intervals.

FIG. 19 is a schematic partial end view of a support and the like for describing a method for manufacturing a Spindt-type field emission device according to Embodiment 6 of the present invention.

FIG. 20 is a schematic partial end view of a support and the like for explaining the method for manufacturing the Spindt-type field emission device according to the sixth embodiment of the present invention, following FIG. 19;

FIG. 21 is a schematic partial end view of a support and the like for describing a method for manufacturing a Spindt-type field emission device according to Embodiment 7 of the present invention.

FIG. 22 is a schematic partial end view of the support and the like for explaining the method for manufacturing the Spindt-type field emission device according to the seventh embodiment of the present invention, following FIG. 21;

FIG. 23 is a schematic partial end view of a support and the like for explaining the method for manufacturing the Spindt-type field emission device according to the seventh embodiment of the present invention, following FIG. 22;

FIG. 24 is a schematic partial end view of the support and the like for describing the method for manufacturing the Spindt-type field emission device according to the seventh embodiment of the present invention, following FIG. 23;

FIG. 25 is a schematic partial end view of a support and the like for describing a method for manufacturing a Spindt-type field emission device according to Embodiment 8 of the present invention.

FIG. 26 is a schematic partial end view of the support and the like for explaining the method for manufacturing the Spindt-type field emission device according to the eighth embodiment of the invention, following FIG. 25;

FIG. 27 is a schematic partial end view of a support and the like for describing a method for manufacturing a Spindt-type field emission device according to Embodiment 9 of the present invention.

FIG. 28 is a schematic partial end view showing an edge-type field emission device according to Embodiment 10 of the present invention.

FIG. 29 is a schematic partial perspective view showing an edge-type field emission device according to Embodiment 10 of the present invention.

FIG. 30 is a schematic partial end view of a support and the like for describing a method of manufacturing an edge-type field emission device according to Embodiment 10 of the present invention.

FIG. 31 is a schematic partial end view of the support and the like for explaining the method of manufacturing the edge-type field emission device according to the tenth embodiment of the invention, following FIG. 30;

FIG. 32 is a schematic partial end view of the support and the like for explaining the method of manufacturing the edge-type field emission device according to the tenth embodiment of the invention, following FIG. 31;

FIG. 33 is a schematic partial end view showing a planar type field emission device according to Embodiment 11 of the present invention.

FIG. 34 is a schematic partial end view of a support and the like for describing a method of manufacturing a planar field emission device according to Embodiment 11 of the present invention.

FIG. 35 is a schematic partial end view of a field emission device in which a focus electrode is incorporated in an edge type field emission device having a second structure.

FIG. 36 is a schematic partial end view and a schematic exploded perspective view of a cathode panel provided with a main wiring having a shunt structure.

FIG. 37 is a schematic partial end view and a schematic exploded perspective view showing a modification of the structure of the trunk wiring.

FIG. 38 is a conceptual diagram of an inspection apparatus suitable for implementing the first embodiment of the present invention.

FIG. 39 is a conceptual diagram of an inspection apparatus suitable for carrying out Embodiment 3 of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Cathode panel, 12 ... Electron emission area, 21 support body, 22 ... Cathode electrode, 22A ...
・ Conductive material layer for cathode electrode, 23 ... insulating layer, 24
... Gate electrode, 24A ... Conducting material layer for gate electrode, 24B ... Oxidized portion of gate electrode, 25
..Opening part, 26 ... Emission electrode, 26A ... Oxidized electron emission electrode, 27 ... Release layer, 28 ...
Conductive material layer, 30: conductive foreign matter, 31: conductive thin film, 40: adhesion layer, 41: conductive material layer, 42
... Mask material layer, 43 ... Etching stop layer, 5
0: base, 51: flattening layer, 60: anode panel, 61: substrate, 62, 62R, 62G,
62B: phosphor layer, 63: anode electrode, 64
... Black matrix, 71 ... Support, 72
... First gate electrode, 73 ... First insulating layer, 74
..Electron emission layer, 75... Second insulating layer, 76... Gate electrode, 77... Second gate electrode, 78, 78A,
78B, 78C, 78D: opening, 79: resist layer, 79A: resist opening, 81: support, 84: electron emission layer, 85: insulating layer, 86
..Gate electrode, 88 opening, 89 resist layer, 89A resist opening

Claims (9)

[Claims] A voltage is applied between an electron-emitting portion and a gate electrode of a cathode panel in which a plurality of cold-cathode field electron-emitting devices each including an electron-emitting portion and a gate electrode are formed on a support, When there is a short circuit between the gate electrode and
Evaporate or vaporize the short circuit based on the generated heat,
Thus, a method for inspecting a cathode panel for a cold cathode field emission display device, wherein a portion between the electron emitting portion and the gate electrode is rendered non-conductive. 2. The method according to claim 1, wherein the cathode panel is placed in an atmosphere having a pressure of 10 Pa or less, and when the electron emitting portion and the gate electrode are in a short-circuit state, the short-circuit portion is evaporated based on generated heat. A method for inspecting a cathode panel for a cold cathode field emission display according to claim 1. 3. A cold cathode field emission device according to claim 2, wherein when the electron emission portion and the gate electrode are in a short-circuit state, a part of the gate electrode is evaporated based on generated heat. Inspection method of cathode panel for display device. 4. A method according to claim 1, wherein the cathode panel is placed in an atmosphere containing an etching gas, and a voltage is applied between the electron-emitting portion and the gate electrode.
2. The method for inspecting a cathode panel for a cold cathode field emission display according to claim 1, wherein the short-circuit portion is vaporized by etching based on generated heat and an etching gas. 5. The cooling device according to claim 4, wherein when the electron-emitting portion and the gate electrode are in a short-circuit state, a part of the gate electrode is vaporized based on generated heat and an etching gas. Cathode for cathode field emission display
Panel inspection method. 6. A cold cathode field emission device comprising: (A) a cathode electrode formed on a support; (B) an insulating layer formed on the support including the cathode electrode; and (C) an insulating layer. (D) an opening penetrating through the gate electrode and the insulating layer; and (E) an electron emission electrode having a conical shape formed on a cathode electrode located at the bottom of the opening. 2. The method for inspecting a cathode panel for a cold cathode field emission display according to claim 1, wherein the electron emission electrode corresponds to an electron emission portion. 7. A cathode panel having a cold cathode field emission device comprising an electron emission portion and a gate electrode formed on a support is immersed in a non-conductive liquid. When a voltage is applied between the electron emitting portion and the gate electrode, when the conductive foreign matter short-circuits between the electron emitting portion and the gate electrode, the generated heat evaporates the liquid and removes the conductive foreign matter by the resulting bubbles. Thus, a method for inspecting a cathode panel for a cold cathode field emission display device, wherein a portion between the electron emitting portion and the gate electrode is rendered non-conductive. 8. The method for inspecting a cathode panel for a cold cathode field emission display according to claim 4, wherein the liquid is liquefied nitrogen. 9. A cold cathode field emission device comprising: (A) a cathode electrode formed on a support; (B) an insulating layer formed on the support including the cathode electrode; and (C) an insulating layer. (D) an opening penetrating through the gate electrode and the insulating layer; and (E) an electron emission electrode having a conical shape formed on a cathode electrode located at the bottom of the opening. The method according to claim 7, wherein the electron emission electrode corresponds to an electron emission portion.