JP2001015514A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve a yield and quality by correcting a fault caused in the course of a manufacturing process. SOLUTION: In the manufacturing method, conductive layers 201 and 202 or/and semiconductor layers 203, 204 and 205 are formed to form a desired pattern. In this case, a step of inspecting at least one of short circuit and foreign matter deposition at the time of ending the deposition or patterning of the conductive layers or/and semiconductor layers prior to formation of a protective film and irradiating a laser beam on the detected short-circuited location or/and foreign matter deposited location is carried out at least once.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device in which at least one of a conductive layer and a semiconductor layer is formed into a desired pattern.

[0002]

2. Description of the Related Art Conventionally, in radiography, the technology has been advanced in the direction of filmlessness, and an X-ray area sensor for directly reading X-rays and performing digital processing has been developed.

FIGS. 5 to 8 are views showing the steps of manufacturing a conventional X-ray area sensor, wherein (a) shows a plan view and (b) shows a cross-sectional view.

First, an electrode material made of Cr or the like corresponding to a lower electrode is deposited on a cleaned glass substrate 200 by a film forming process, and then a resist coating, exposure, development, etching, and resist removing processes are performed to form a gate. Form the bias wiring 201 and the sensor electrode 202 (FIG. 5)
(A), (b)).

Next, three types of amorphous silicon layers including an insulating layer are overlaid and deposited on the pattern to form the pattern shown in FIG. That is, an insulating layer 203 made of SiN: H or the like, a semiconductor layer 204 made of a-Si: H (hydrogenated amorphous silicon) or the like, and an ohmic contact layer 205 made of an n ⁺ layer or the like are stacked and deposited to perform patterning. .

The amorphous silicon layers 203 and 2
At 04 and 205, contact holes for making the upper and lower electrodes conductive are opened, and then an upper electrode layer made of Al or the like is deposited, and resist coating, exposure, development,
The pattern of FIG. 7 is formed by performing an etching and a resist stripping process. 206 is a signal line, 207 is a bias line,
Reference numeral 208 denotes a drain electrode of the TFT, and reference numeral 209 denotes a contact hole for establishing conduction between the sensor electrode and the drain electrode.

After that, a device isolation process for removing unnecessary amorphous silicon portions is performed, and finally a protective insulating layer 210 made of SiN: H or the like is deposited, and the electrode extraction portion is exposed by patterning. 8 are formed.

In this state, the optical sensor has a function as an optical sensor. Therefore, an electrical inspection is performed here, an electrically defective portion is observed with a microscope, and repair is performed only at a location where laser repair can be performed.

FIG. 9 to FIG. 12 show typical modes of the cause of failure which occur in each of the above-mentioned steps. FIG. 9 is a diagram showing the causes of defects that occur after the lower electrode is patterned. Numeral 302 denotes a mode in which adjacent electrodes are short-circuited. Numeral 301 denotes a possibility that foreign matter mixed in the lower electrode may deteriorate the coverage of the three types of amorphous Si layers formed thereon and cause short-circuiting between the upper and lower electrodes. There is a certain mode.

FIG. 10 is a diagram showing the causes of defects that occur after depositing three types of amorphous silicon. 303
Is a mode in which the foreign matter mixed in the amorphous silicon may deteriorate the coverage of the amorphous silicon and cause a short circuit between the upper and lower electrodes.

FIG. 11 is a diagram showing the causes of defects that occur after forming the upper electrode. Reference numeral 304 denotes a mode in which adjacent electrodes are short-circuited.

FIG. 12 is a diagram showing the causes of defects that occur after performing an element isolation step and depositing a protective insulating film thereon. Reference numeral 305 denotes a mode in which the upper and lower electrodes are short-circuited by a foreign substance.

FIG. 13 is a diagram showing a laser repair target portion. In the figure, repairs are performed at portions indicated by 401 to 404. The repair at the portion indicated by 401 is the above-mentioned 3
01, 303, and 305, the occurrence location is T
This is possible when in the FT section and the sensor section. 402
Repairs at parts indicated by reference numerals 404 to 301 are 301, 303, and 30.
Among the five foreign substance modes, the set is performed when the generation place is at the crossing point between the gate line of the lower electrode and the signal line of the upper electrode.

Therefore, when the repair is performed at the portion indicated by 401, the bit becomes a single point defect, and
If 404 is performed, the signal line becomes a single line defect. Panel performance is ensured by performing image processing on these single point defects and single line defects.

As described above, for a failure mode that occurs in a limited place, repair is performed later to secure the yield. However, a foreign substance that occurs in a place other than the above-described places, or a defect such as 302 or 304 is generated. The short mode between the same layers has a problem in sensor characteristics or reliability, and is a defective product.

[0016]

According to the above-described conventional repair method, there are the following problems. (1) It takes time and cost to perform the image processing of the point or the line defect after the repair, and it may be a hindrance when further increasing the resolution of the sensor. (2) As shown in FIG. 13, since the uppermost protective layer is removed by repair, a structure for suppressing water from entering from above is required. Therefore, the cost is high. (3) It is not possible to repair a short-circuit portion between the same-layer electrodes such as 302 and 304 (the yield does not increase).

In order to solve the above-mentioned problems, the present invention provides a manufacturing method for improving the manufacturing yield, reducing the cost, and further improving the performance of a semiconductor device such as the X-ray area sensor. The purpose is to do.

[0018]

According to a method of manufacturing a semiconductor device of the present invention, a method of manufacturing a semiconductor device in which a conductive layer and / or a semiconductor layer is formed into a desired pattern is provided. A step of performing at least one of inspection of the conductive layer or / and the semiconductor layer, a short circuit at the end of deposition or patterning, and adhesion of foreign matter, and irradiating the detected short spot or / and foreign matter adhesion place with laser light;
It is characterized in that it is performed at least once.

According to the present invention, an inspection is performed by reading an optical image or the like at least once at the end of deposition or patterning of each layer before formation of the protective layer, and a laser beam is irradiated to a short-circuit portion between electrode layers or a foreign-material adhering portion. It will be corrected by doing so. Then, it is preferably washed and then flowed to the next step. As a result, the yield of semiconductor devices such as X-ray area sensors can be improved, costs can be reduced,
Further, the performance can be improved.

[0020]

Embodiments of the present invention will be described below in detail with reference to the drawings. In addition, the following FIGS.
, The same reference numerals are given to the same components as those in FIGS. 5 to 8.

[Embodiment 1] FIG. 1 is an external view of a defective mode occurring after the formation of the lower electrode layer described with reference to FIG. 9 after repair. After the lower electrode layer is patterned to form the gate bias 201 and the sensor electrode 202, an image is captured by a photoelectric conversion element such as a line sensor, and image processing is performed to detect a foreign substance and a pattern short.

The defect information and the position in the panel are aligned with each other in conjunction with a repair machine, and the laser is irradiated by performing alignment while detecting the defective portion again. Reference numeral 102 denotes a state after the short mode 302 of the adjacent wiring is repaired. In this case, power is applied to repair the extra wiring over the entire area. For example, when the wiring layer is Cr and the thickness is 1000 °, when a YAG laser beam having a wavelength of 355 nm is used, when an output pulse light of 1.4 mJ is applied to an area having a spot diameter of 30 μm for about 5 to 20 shots, the wiring layer is completely removed. Is possible.

The determination of the repair completion is made automatically while reading the image or visually. Reference numeral 101 denotes a repaired foreign substance 301 mixed in the lower electrode layer. Regarding this repair, the laser is irradiated with a laser having a spot diameter equal to that of the foreign matter and a low power that does not open the electrode as much as possible. In some cases, the irradiation may be performed while repeatedly irradiating a low-power laser.

In the case where the foreign matter is generated at a place where the upper electrode does not remain on the upper part, the repair need not be performed. The determination of repair completion may be made in the same manner as in the above method. afterwards,
If possible, to remove contamination from flying objects due to repair,
It is preferable to perform cleaning using liquid + megasonic or liquid + brush. For example, 1 MHZ is applied to the cathode water made from pure water by passing through a negatively applied Pt electrode.
When a megasonic of about z is applied and sprayed from the nozzle onto the substrate surface, the effect of removing flying matter is high. The pH of the cathode water is desirably controlled to preferably 8 to 10. Further, if the material to be cleaned is a hard substance such as glass or Cr, brush cleaning with a nylon thread may be performed while spraying the above-described cathode water. The substrate washed by such a method is then rinsed with pure water, and then vapor-dried or spin-dried with IPA and sent to the next step.

Further, when organic matter is contained in the flying foreign matter, it is preferable to add a cleaning using pure water containing ozone as the above-mentioned liquid.

[Embodiment 2] Reference numeral 103 in FIG. 2 is an external view after repairing a failure mode 303 which occurs after the amorphous silicon layer described in FIG. 10 is deposited. The appearance inspection after the formation of the amorphous silicon and the confirmation method during the repair are the same as those described in the first embodiment. Also,
In the case where foreign matter becomes an etched portion at the time of separation between elements, repair is not necessary.

In this case, since the electrical contact with the upper electrode must not be made, the spot diameter is made equal to that of the foreign matter as much as possible, and the lower electrode is also blown at the same time. With this repair, since the lower electrode does not exist directly below the formed hole, the upper electrode deposited by a method such as DC magnetron sputtering having a low forming temperature of 100 to 150 ° C. and a slightly exposed face at the bottom of the hole. The conducted lower electrode does not conduct.

The completion of the repair is determined automatically while reading the image or visually. Subsequent cleaning for removing contamination of flying objects by repair is performed in the first embodiment.
Is the same as

[Embodiment 3] In FIG. 3, reference numeral 104 denotes a failure mode 30 generated when the upper electrode described with reference to FIG. 11 is formed.
FIG. 4 is an external view after repair of No. 4; The appearance inspection after upper electrode patterning and the confirmation method during repair are the same as those in the first embodiment. In this case, since the amorphous silicon layer must be left as much as possible, the power of the laser is reduced so that only the upper wiring is melted and scattered.

The completion of the repair is determined automatically while reading the image or visually. Subsequent cleaning is the same as in the first embodiment.

[Fourth Embodiment] Reference numeral 105 in FIG. 4 denotes a failure mode 3 which occurs after the device isolation described with reference to FIG.
It is an external view after repair of 05. The appearance inspection after the separation between the elements and the confirmation method during the repair are the same as those in the first embodiment.

The place of the operation may be only the foreign matter adhering over the upper electrode and the lower electrode. Since the foreign matter adhering here is not embedded in the thin film on the element, the repair power is reduced and the repair is performed softly so as not to affect other element constituent parts.

The subsequent cleaning is the same as in the first embodiment.

[0034]

As described above, according to the present invention,
In a method for manufacturing a semiconductor device in which a plurality of deposited films are formed while patterning, defective repair can be performed at a key point in a process, and thus, yield and quality can be improved.

[Brief description of the drawings]

1A and 1B are a plan view and a sectional view, respectively, of Embodiment 1 of a method for manufacturing a semiconductor device of the present invention.

FIG. 2 is a plan view and a cross-sectional view of Embodiment 2 of the method for manufacturing a semiconductor device of the present invention.

FIG. 3 is a plan view and a cross-sectional view of Embodiment 3 of the method for manufacturing a semiconductor device of the present invention.

FIG. 4 is a plan view and a cross-sectional view of Embodiment 4 of the method for manufacturing a semiconductor device of the present invention.

5A and 5B are a plan view and a cross-sectional view illustrating a manufacturing process of a conventional method for manufacturing a semiconductor device.

6A and 6B are a plan view and a cross-sectional view illustrating a manufacturing process of a conventional method for manufacturing a semiconductor device.

7A and 7B are a plan view and a cross-sectional view illustrating a manufacturing process of a conventional method for manufacturing a semiconductor device.

8A and 8B are a plan view and a cross-sectional view illustrating a manufacturing process of a conventional method for manufacturing a semiconductor device.

9A and 9B are a plan view and a cross-sectional view illustrating a pattern defect and a foreign substance of the semiconductor device.

10A and 10B are a plan view and a cross-sectional view illustrating a pattern defect and a foreign matter of the semiconductor device.

FIGS. 11A and 11B are a plan view and a cross-sectional view illustrating a pattern defect and foreign matter of the semiconductor device;

12A and 12B are a plan view and a cross-sectional view illustrating a pattern defect and a foreign substance of the semiconductor device.

FIG. 13 is a plan view and a cross-sectional view after repair in a conventional example.

[Explanation of symbols]

101 Repair part of foreign matter 301 mixed in lower electrode layer 102 Repair part of short-circuit mode 302 of adjacent wiring 103 Part after repair of failure mode 303 104 Part after repair of failure mode 304 105 After repair of failure mode 305 Part 201 Gate bias wiring 202 Sensor lower electrode 203 Insulating layer made of SiN: H or the like 204 Semiconductor layer made of a-Si: H or the like 205 Ohmic contact layer made of n ⁺ or the like 206 Signal wiring 207 Bias line 208 TFT drain electrode 209 Contact hole part for establishing conduction between the sensor electrode and the drain electrode 210 Insulating layer made of SiN: H etc. 301 A mode that may cause a short between upper and lower electrodes 302 A mode where a short between adjacent electrodes 303 Upper and lower Short between electrodes Mode 304 where adjacent electrodes are short-circuited 305 Mode where upper and lower electrodes are short-circuited due to foreign matter 401 Repair section of TFT section 402 Repair section next to cross section in signal wiring section 403 Signal Repair part next to cross part in wiring part 404 Repair part near lead-out part in signal wiring part

 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 4M106 AA10 AA20 BA04 CA40 CA42 DB02 DB04 DJ38 4M118 AA10 AB01 BA05 CA14 CB06 CB14 EA01 FB09 FB13 GA10 5F033 GG04 HH05 HH17 QQ53 QQ91 VV15 XX36 5F110 AA02 BB01 GG15 HL03 NN02 NN24 QQ30

Claims (5)

[Claims] 1. A method of manufacturing a semiconductor device, comprising forming a conductive layer and / or a semiconductor layer and forming a desired pattern, comprising: forming a conductive layer and / or a semiconductor layer before forming a protective layer;
A semiconductor device for performing at least one step of performing at least one of short-circuiting and foreign matter adhesion at the end of deposition or patterning and irradiating the detected short-circuited part and / or foreign matter adhesion part with laser light; Manufacturing method. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the irradiation of the laser light is performed while optically detecting a short-circuit portion and / or a foreign-matter-attached portion. Method. 3. The method for manufacturing a semiconductor device according to claim 1, wherein cleaning is performed after the laser light irradiation. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the inspection reads a pattern image by a photoelectric conversion element and detects a short circuit of a wiring and a foreign substance from the signal intensity of the image. A method for manufacturing a semiconductor device. 5. The method of manufacturing a semiconductor device according to claim 3, wherein the cleaning includes pure water, a liquid containing pure water containing ozone, a liquid containing pure water containing a detergent, and pure water containing carbonic acid. A method for manufacturing a semiconductor device, wherein at least one of a cleaning method using liquid, cathode water, or IPA (isopropyl alcohol), or a cleaning method using IPA vapor is used.