JP2001006769A - Connecting method for electrode - Google Patents
Connecting method for electrodeInfo
- Publication number
- JP2001006769A JP2001006769A JP11172489A JP17248999A JP2001006769A JP 2001006769 A JP2001006769 A JP 2001006769A JP 11172489 A JP11172489 A JP 11172489A JP 17248999 A JP17248999 A JP 17248999A JP 2001006769 A JP2001006769 A JP 2001006769A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- connection
- circuit
- anisotropic conductive
- circuit member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば液晶パネ
ル、ＰＤＰパネル、ＥＬパネル、ベアチップ実装などの
電子部品と回路板や回路板同士を接着固定すると共に、
両者の電極同士を電気的に接続する接続方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component such as a liquid crystal panel, a PDP panel, an EL panel, and a bare chip mounted on a circuit board or between circuit boards by bonding.
The present invention relates to a connection method for electrically connecting both electrodes.
【０００２】[0002]
【従来の技術】異方導電性接続部材（以下異方導電部材
という）による接続方法は、相対峙する電極間にフィル
ム状の接着剤である異方導電部材を挟み、接続時に加熱
加圧することにより接続を行う方法である。フィルム状
の接着剤中には電極間の導通を得るための導電粒子が混
合され、接着剤成分としては、熱可塑、熱硬化、または
熱可塑と熱硬化の混合樹脂系が用いられる（例えば特開
昭５５−１０４００７号公報）。また、導電粒子を含ま
ず、樹脂のみからなる回路接続方法も知られている（例
えば特開昭６０−２６０２４３０号公報）。接着剤用樹
脂の代表的なものには、熱可塑系としてスチレン系、ポ
リエステル系があり、また熱硬化系としてはエポキシ樹
脂系、シリコーン樹脂系または熱ラジカル系が知られて
いる。熱可塑系、熱硬化系共に接続するに際しては加熱
加圧が必要である。熱可塑系では樹脂を流動させ被着体
との密着力を得るために、また熱硬化系では更に樹脂の
硬化反応を行うためである。現在は、接続信頼性の面か
ら熱可塑熱硬化混合系と熱硬化系が主流となっている。2. Description of the Related Art A connection method using an anisotropic conductive connecting member (hereinafter referred to as an anisotropic conductive member) is such that an anisotropic conductive member, which is a film-like adhesive, is sandwiched between opposing electrodes and heated and pressed during connection. Is a method of making a connection. Conductive particles for obtaining conduction between the electrodes are mixed in the film-like adhesive, and thermoplastic, thermosetting, or a mixed resin of thermoplastic and thermosetting is used as the adhesive component (for example, No. 55-104007. In addition, a circuit connection method that does not include conductive particles and is made of only resin is also known (for example, Japanese Patent Application Laid-Open No. 60-2602430). Representative examples of adhesive resins include styrene-based and polyester-based thermoplastic resins, and epoxy resin-based, silicone resin-based, and thermal radical-based thermosetting systems. Heating and pressurizing is required when connecting both thermoplastic and thermosetting systems. This is because in the case of a thermoplastic system, the resin is caused to flow to obtain an adhesive force with an adherend, and in the case of a thermosetting system, the resin is further subjected to a curing reaction. At present, thermoplastic thermosetting mixed systems and thermosetting systems are the mainstream from the viewpoint of connection reliability.
【０００３】しかし、最近では、接続後の隣接する電極
間に大電圧（ＤＣ、ＡＣ５０〜４００Ｖ）をかけ使用す
る用途が広がりつつある。大電圧がかかることにより、
電極間のマイグレーション（電極から金属原子やイオン
が移動、析出する現象）が発生し易く、特にガラス基板
としてアルカリガラスや、Ａｇ、Ａｌを含有させた電極
を用いた場合にマイグレーションが発生し易い。また、
マイグレーションの発生する部位としては、異方導電材
による接続部に限って観察すると、ガラスの界面にマイ
グレーションが発生し易く、特にＡｇを含有する電極は
マイグレーションが発生し易くなる。さらに、近年、異
方導電材の用途は拡大しており、接続する回路部材も多
種多様化している。ＦＰＣ、ＴＣＰあるいは半導体チッ
プメーカーはその用途に応じて、仕様を変えている。Ｆ
ＰＣにおいては、ポリイミドとＣｕ電極を接続する接着
剤に異方導電材と密着性のよいＮＢＲを含まないものを
使用したり、接着剤を使用しない２層ＦＰＣも普及して
いる。また、ＴＣＰの接着剤には異方導電材と密着性の
悪い有機シリコン系のものが使用されている。さらに、
半導体チップ表面に絶縁層としてポリイミドを形成した
チップが多用されている。このようなＦＰＣ、ＴＣＰ及
びチップと異方導電材は接続強度が低くなるといった問
題がある。However, recently, applications in which a large voltage (DC, 50 to 400 V AC) is applied between adjacent electrodes after connection have been used. By applying a large voltage,
Migration between electrodes (a phenomenon in which metal atoms and ions move and precipitate from the electrodes) easily occurs, and particularly when an electrode containing alkali glass, Ag, or Al is used as a glass substrate, migration easily occurs. Also,
When the migration is observed only at the connection portion made of an anisotropic conductive material, migration is likely to occur at the glass interface, and particularly the migration of the electrode containing Ag is likely to occur. Further, in recent years, applications of the anisotropic conductive material are expanding, and the circuit members to be connected are also diversified. FPC, TCP or semiconductor chip manufacturers change specifications according to their applications. F
In PCs, an adhesive connecting the polyimide and the Cu electrode that does not contain NBR having good adhesion to the anisotropic conductive material, or a two-layer FPC that does not use an adhesive has been widely used. An organic silicon-based adhesive having poor adhesion to an anisotropic conductive material is used for the TCP adhesive. further,
A chip in which polyimide is formed as an insulating layer on the surface of a semiconductor chip is frequently used. Such an FPC, a TCP, a chip, and an anisotropic conductive material have a problem that connection strength is low.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、かかる状況
に鑑みなされたもので、熱硬化性異方導電材を使った接
続方法における接続後のマイグレーションを抑制すると
ともに、接続強度の向上を図った電極の接続方法を提供
することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and aims to suppress migration after connection in a connection method using a thermosetting anisotropic conductive material and to improve connection strength. It is an object of the present invention to provide a method for connecting electrodes.
【０００５】[0005]
【課題を解決するための手段】即ち本発明は、接続電極
を有する回路部材１と、前記回路部材１の接続電極に対
峙する接続電極を有する回路部材２を熱硬化性異方導電
性接続部材を介して接続する方法において、回路部材
１、２の少なくとも一方の電極面が、前記異方導電性接
続部材に対して少なくとも硬化促進作用を有する物質に
より覆われていることを特徴とする電極の接続方法に関
する。That is, according to the present invention, a circuit member 1 having a connection electrode and a circuit member 2 having a connection electrode facing the connection electrode of the circuit member 1 are made of a thermosetting anisotropic conductive connection member. Wherein at least one of the electrode surfaces of the circuit members 1 and 2 is covered with a substance having at least a curing promoting effect on the anisotropic conductive connection member. Regarding connection method.
【０００６】[0006]
【発明の実施の形態】本発明に用いられる硬化促進作用
を有する物質としては、ベンゾトリアゾール類、アミノ
シラン類、イミダゾール類の化合物が用いられる。一般
的にベンゾトリアゾール類、アミノシラン類、イミダゾ
ール類はエポキシ樹脂系、シリコーン樹脂系または熱ラ
ジカル系の硬化促進剤あるいは硬化剤として知られてい
る。これらの具体例を、限定でなく単に例示の目的で示
すと、ベンゾトリアゾール類としては、例えば、１，
２，３−ベンゾトリアゾール、３−ベンジル−５−アミ
ノ−１，２，４−トリアゾール、１−ベンジル−３−ア
ミノ−５−フェニル−１，２，４−トリアゾール、１，
４−ジフェニルエンドアニリノジヒドロトリアゾール、
３，５−ビス（４−アミノフェニル）−１，２，４−ト
リアゾール、４−サリチリデンイミノ−３，５−ジフェ
ニル−１，２，４−トリアゾール、３−（Ｎ−サリチロ
イル）アミノ−１，２，４−トリアゾール、３−［Ｎ−
β−（３，５−ｔ−ブチル−４−ヒドロキシフェニル）
プロピオニル］アミノ−１，２，４−トリアゾール、５
−アミノ−３−（ｐ−ニトロベンジル）−１，２，４−
トリアゾール、１，２，４−トリアゾール−５−アゾ−
４−（Ｎ，Ｎ−ジエチル）アニリン、１，２，４−トリ
アゾール−５−アゾ−４’−（Ｎ−メチル−Ｎ−ベンジ
ル）アニリン、３−（４−Ｎ−エチル−Ｎ−ベンジルア
ミノフェニルアゾ）−２，３−ジメチルトリアゾリウ
ム、１，４−ジメチル−２−アミノ−５−｛４−（ベン
ジル−エチルアミノ）フェニルアゾ｝−１，２，４−ト
リアゾリウム、３，５−ビス［｛４−（Ｎ，Ｎ−ジエチ
ルアミノ）フェニル｝アゾ］１，２，４−トリアゾリウ
ム、１，４−ジメチル−３，５−ビス｛４−（Ｎ−メチ
ル−Ｎ−β−エトキシエチルアミノ）フェニルアゾ｝−
１，２，４−トリアゾリウム、１，２，４−トリアゾー
ル−５−アゾ−３’−（２’−フェニル）インドール、
３−｛（１−エチル−２−フェニルインドール−３−イ
ル）アゾ｝−１，２，４−トリアゾールなどを例示する
ことができる。アミノシラン類としてはγ−アミノプロ
ピルトリエトキシシラン、Ｎ−β（アミノエチル）γ−
アミノプロピルメトキシシラン、Ｎ−β（アミノエチ
ル）γ−アミノプロピルメチルジメトキシシラン、Ｎ−
フェニル−γ−アミノプロピルトリメトキシシランなど
を例示することができる。イミダゾール類としては２−
メチルイミダゾール、２−エチル−４−イミダゾール、
２−フェニルイミダゾール、２−ウンデシルイミダゾー
ル、２−ヘプタデシルイミダゾール、２−メチルイミダ
ゾリン、２−エチル−４メチルイミダゾリン、２−フェ
ニル−イミダゾリン、２−ウンデシル−イミダゾリン、
２−ヘプタデシルイミダゾリン、２−エチルイミダゾー
ル、２−イソプロピルイミダゾール、２，４−ジメチル
イミダゾール、２−フェニル−４−メチル−イミダゾー
ル、２−エチル−イミダゾリン、２−イソプロピルイミ
ダゾリン、２，４−ジメチル−イミダゾリン、２−フェ
ニル−４−メチル−イミダゾリンなどを例示することが
できる。BEST MODE FOR CARRYING OUT THE INVENTION As the substance having a curing accelerating action used in the present invention, compounds of benzotriazoles, aminosilanes and imidazoles are used. In general, benzotriazoles, aminosilanes, and imidazoles are known as epoxy resin-based, silicone resin-based, or thermal radical-based curing accelerators or curing agents. When these specific examples are shown for illustrative purposes only without limitation, benzotriazoles include, for example, 1,
2,3-benzotriazole, 3-benzyl-5-amino-1,2,4-triazole, 1-benzyl-3-amino-5-phenyl-1,2,4-triazole, 1,
4-diphenylendoanilinodidihydrotriazole,
3,5-bis (4-aminophenyl) -1,2,4-triazole, 4-salicylideneimino-3,5-diphenyl-1,2,4-triazole, 3- (N-salicyloyl) amino- 1,2,4-triazole, 3- [N-
β- (3,5-t-butyl-4-hydroxyphenyl)
Propionyl] amino-1,2,4-triazole, 5
-Amino-3- (p-nitrobenzyl) -1,2,4-
Triazole, 1,2,4-triazole-5-azo-
4- (N, N-diethyl) aniline, 1,2,4-triazole-5-azo-4 ′-(N-methyl-N-benzyl) aniline, 3- (4-N-ethyl-N-benzylamino Phenylazo) -2,3-dimethyltriazolium, 1,4-dimethyl-2-amino-5- {4- (benzyl-ethylamino) phenylazo} -1,2,4-triazolium, 3,5-bis [{4- (N, N-diethylamino) phenyl} azo] 1,2,4-triazolium, 1,4-dimethyl-3,5-bis {4- (N-methyl-N-β-ethoxyethylamino) Phenylazo｝-
1,2,4-triazolium, 1,2,4-triazole-5-azo-3 ′-(2′-phenyl) indole,
3-{(1-ethyl-2-phenylindol-3-yl) azo} -1,2,4-triazole and the like can be exemplified. As aminosilanes, γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ-
Aminopropylmethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, N-
Phenyl-γ-aminopropyltrimethoxysilane and the like can be exemplified. 2- imidazoles
Methylimidazole, 2-ethyl-4-imidazole,
2-phenylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-methylimidazoline, 2-ethyl-4methylimidazoline, 2-phenyl-imidazoline, 2-undecyl-imidazoline,
2-heptadecylimidazoline, 2-ethylimidazole, 2-isopropylimidazole, 2,4-dimethylimidazole, 2-phenyl-4-methyl-imidazole, 2-ethyl-imidazoline, 2-isopropylimidazoline, 2,4-dimethyl- Examples thereof include imidazoline and 2-phenyl-4-methyl-imidazoline.
【０００７】これらの化合物あるいはこれら化合物を有
機溶剤で希釈あるいは溶解したものを、回路部材２のガ
ラス基板上に金属電極あるいはＩＴＯ電極を形成した回
路、ＰＣＢまたはＦＰＣ上に金属電極を形成した回路面
に塗布することにより、回路部材２と異方導電材料の接
続時に回路部材２の表面において異方導電材の硬化を促
進させ、回路部材２と異方導電材の密着性を向上させ、
電極間のスペース部のガラス界面で発生し易いマイグレ
ーションを抑制することができる。また、金属電極ある
いはＩＴＯ電極と異方導電材の密着力が向上することで
金属あるいはＩＴＯの溶出を防ぐ効果があり、マイグレ
ーションを抑制することが可能である。特にＡｇ、Ａｌ
を含む電極では顕著な効果が見られる。さらに、硬化促
進作用のある化合物を塗布処理することにより、回路部
材２と異方導電材の密着力が増し、接続強度が向上す
る。一方、回路部材１が異方導電材と密着性の悪いＦＰ
Ｃ、ＴＣＰまたは半導体チップにおいても回路部材１の
表面に塗布処理することにより、接続強度が向上する。A circuit in which a metal electrode or an ITO electrode is formed on the glass substrate of the circuit member 2 or a circuit surface in which a metal electrode is formed on a PCB or FPC are prepared by diluting or dissolving these compounds or an organic solvent. By applying to the circuit member 2, when the circuit member 2 and the anisotropic conductive material are connected, the curing of the anisotropic conductive material on the surface of the circuit member 2 is promoted, and the adhesion between the circuit member 2 and the anisotropic conductive material is improved.
Migration that is likely to occur at the glass interface in the space between the electrodes can be suppressed. Further, since the adhesion between the metal electrode or the ITO electrode and the anisotropic conductive material is improved, there is an effect of preventing the elution of the metal or the ITO, and the migration can be suppressed. Especially Ag, Al
A remarkable effect is seen in the electrode containing. Further, by applying a compound having a curing promoting action, the adhesion between the circuit member 2 and the anisotropic conductive material is increased, and the connection strength is improved. On the other hand, when the circuit member 1 has poor adhesion to the anisotropic conductive material,
By applying a coating treatment on the surface of the circuit member 1 even for C, TCP or semiconductor chips, the connection strength is improved.
【０００８】[0008]
【実施例】次に実施例により具体的に説明するが、本発
明はこの実施例に限定されるものではない。 実施例１ 回路部材１としてクシ形のＴＣＰ（ピッチＰ＝０．２ｍ
ｍ、１０ｚ（３５μｍ）Ｃｕ電極、Ｓｎメッキ、電極本
数１００ライン）を用い、また回路部材２としてＰＣＢ
（Ｐ＝０．２、１０ｚ、Ｃｕ電極、Ｎｉ／Ａｕメッキ
品）を用いた。これらの回路部材１，２の電極表面をア
ミノシラン類であるγ−アミノプロピルトリエトキシシ
ラン２０ｗｔ％トルエン希釈溶液を塗布し、その後異方
導電材ＡＣ−２０５２Ｐ−４５、２，５ｍｍ幅（日立化
成工業（株）製 エポキシ樹脂系フィルム状接着剤）を
用い、ＰＣＢ側に８０℃、１Ｍｐａ、５ｓで仮圧着を行
った。その後、位置合わせを行い、１７０℃、２Ｍｐ
ａ、２０ｓで本接続を行った。また、アミノシラン処理
のないものを比較例１として作製した。この接続後の基
板に防湿コート処理を施し、通電処理を行った。印可電
圧はＤＣ３００Ｖで、処理条件は８５℃、８５％ＲＨと
した。表１に処理時間毎の絶縁抵抗を示した。この結果
から、アミノシランにより処理を行ったものでは、絶縁
性の低下が抑制されている。アミノシランの効果により
異方導電材樹脂と金属電極の密着性が改善され、絶縁性
の低下が抑制されている。さらに、回路部材１として有
機シリコン系の接着剤を使用したＴＣＰ（ピッチＰ＝
０．２ｍｍ、１０ｚ（３５μｍ）Ｃｕ電極、Ｓｎメッ
キ）及び回路部材２としてＰＣＢ（Ｐ＝０．２、１０
ｚ、Ｃｕ電極、Ｎｉ／Ａｕメッキ品）を用い、上記条件
と同様に接続を行い、アミノシランによる処理を行わな
いものを比較例１として、接続強度をピール試験として
剥離スピード５０ｍｍ／ｍｉｎ、９０°ピールにて測定
した。この結果を表１に示した。アミノシランによる処
理を行ったものは、ＴＣＰの表面の異方導電材との密着
力が向上し、処理行っていないものに比べ高い接着強度
が得られた。信頼性評価として８５℃、８５％ＲＨ処理
を行い接着力を評価したが、処理したものは接着強度の
劣化が抑制され、良好な接続強度を示した。Next, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples. Example 1 A comb-shaped TCP (pitch P = 0.2 m) was used as the circuit member 1.
m, 10z (35 μm) Cu electrode, Sn plating, number of electrodes 100 lines)
(P = 0.2, 10z, Cu electrode, Ni / Au plated product) was used. The electrode surfaces of these circuit members 1 and 2 are coated with a dilute solution of 20% by weight of γ-aminopropyltriethoxysilane, which is an aminosilane, and then anisotropic conductive material AC-2052P-45, 2.5 mm wide (Hitachi Chemical Industries, Ltd.) Using an epoxy resin film adhesive (manufactured by Co., Ltd.), temporary press-bonding was performed at 80 ° C., 1 Mpa, and 5 s on the PCB side. After that, alignment is performed, 170 ° C, 2Mp
This connection was made at a and 20 s. In addition, one without the aminosilane treatment was produced as Comparative Example 1. After the connection, the substrate was subjected to a moisture-proof coating process, and an electric current applying process was performed. The applied voltage was DC 300 V, and the processing conditions were 85 ° C. and 85% RH. Table 1 shows the insulation resistance for each processing time. From this result, in the case where the treatment was performed with aminosilane, a decrease in insulation was suppressed. Due to the effect of aminosilane, the adhesion between the anisotropic conductive material resin and the metal electrode is improved, and a decrease in insulation is suppressed. Furthermore, TCP using an organic silicon-based adhesive as the circuit member 1 (pitch P =
0.2 mm, 10 z (35 μm) Cu electrode, Sn plating) and PCB (P = 0.2, 10
z, Cu electrode, Ni / Au plated product), the connection was performed in the same manner as described above, and the one not subjected to the treatment with aminosilane was used as a comparative example 1. It was measured with a peel. The results are shown in Table 1. In the case where the treatment with aminosilane was performed, the adhesion of the TCP surface to the anisotropic conductive material was improved, and a higher adhesive strength was obtained than in the case where the treatment was not performed. As a reliability evaluation, an 85 ° C., 85% RH treatment was performed to evaluate the adhesive strength. As a result, degradation of the adhesive strength was suppressed, and a good connection strength was exhibited.
【０００９】[0009]
【表１】 [Table 1]
【００１０】実施例２ 回路部材１として、１電極間おきにグランドを取った通
電試験用のＦＰＣ（１０ｚ、Ｃｕ、Ｎｉ／Ａｕメッキ品
Ｐ＝０．３）を用い、回路部材２とし無アルカリガラス
基板上に１０μｍの高さにピッチＰ＝０．３ｍｍでＡｇ
電極を形成した部材を用いた。回路部材２に実施例１と
同様にアミノシラン類であるγ−アミノプロピルトリエ
トキシシラン希釈溶液（２０ｗｔ％）処理を行い、異方
導電材で接続を行った。ここで、異方導電材ＡＣ−２０
５２０Ｐ−３５（日立化成工業（株）製 エポキシ樹脂
系フィルム状接着剤）を用い、通電試験条件としＤＣ１
００Ｖとし、他は実施例１と同様な方式で試験を行っ
た。表２に試験結果を示した。アミノシラン処理を行っ
ていないもので７５０ｈでマイグレーションが発生した
が、アミノシラン処理を行ったものでは、１０００ｈ経
過しても絶縁性を保っている。尚、１０6 以下をリーク
とした。一方、接着剤を使用していない２層ＦＰＣ（１
０ｚ、Ｃｕ、Ｎｉ／Ａｕメッキ品Ｐ＝０．３）を回路部
材１として用い、回路部材２として無アルカリガラス基
板上に１０μｍの高さにピッチＰ＝０．３ｍｍでＡｇ電
極を形成した部材を用い、回路部材２にアミノシラン処
理を行ったものと行わないもの（比較例２）を実施例１
と同様に接続強度試験を行った。アミノシラン処理を行
ったものは、良好な接着強度が得られた。Example 2 An FPC (10z, Cu, Ni / Au plated product P = 0.3) for a conduction test with a ground at every other electrode was used as the circuit member 1, and the circuit member 2 was made of non-alkali. Ag at a pitch of P = 0.3 mm at a height of 10 μm on a glass substrate
The member on which the electrode was formed was used. As in Example 1, the circuit member 2 was treated with a dilute solution of aminosilanes such as γ-aminopropyltriethoxysilane (20 wt%) and connected with an anisotropic conductive material. Here, the anisotropic conductive material AC-20
520P-35 (epoxy resin film adhesive manufactured by Hitachi Chemical Co., Ltd.) was used, and DC1
The test was performed in the same manner as in Example 1 except that the voltage was set to 00V. Table 2 shows the test results. Migration occurred at 750 h in the case where the aminosilane treatment had not been performed, but in the case where the aminosilane treatment had been performed, the insulating property was maintained even after 1000 h. Here, 10 6 or less was regarded as leak. On the other hand, a two-layer FPC (1
0z, Cu, Ni / Au plated product P = 0.3) as a circuit member 1, and a member in which an Ag electrode is formed as a circuit member 2 on a non-alkali glass substrate at a height of 10 μm and a pitch P = 0.3 mm. In Example 1, the circuit member 2 was subjected to aminosilane treatment and the circuit member 2 was not performed (Comparative Example 2).
A connection strength test was performed in the same manner as described above. Good adhesive strength was obtained in the case where the aminosilane treatment was performed.
【００１１】[0011]
【表２】 [Table 2]
【００１２】実施例３〜６ 回路部材１として、１電極間おきにグランドを取った通
電試験及び接続強度測定用の種々のＦＰＣ（１０ｚ、Ｃ
ｕ、Ｎｉ／Ａｕメッキ品Ｐ＝０．３）、ＴＣＰ（１０
ｚ、Ｃｕ、Ｎｉ／Ａｕメッキ品Ｐ＝０．３）及び半導体
チップ（１０×１０ｍｍ、高さ０．５ｍｍ、４辺周辺に
５０μｍ角バンプ、高さ２０μｍの金属電極形成）を用
い、回路部材２として無アルカリガラス基板上に１０μ
ｍの高さにピッチＰ＝０．３ｍｍでＡｇ、Ａｌ、ＩＴＯ
電極を形成した部材、ＡｕメッキしたＣｕ電極を持つＰ
ＣＢ及びＦＰＣを用いた。回路部材１及び回路部材２に
実施例１と同様に種々の硬化促進作用のある化合物をそ
のままあるいはトルエンで２０ｗｔ％で希釈した溶液で
塗布処理を行った。その後、異方導電材ＡＣ−２０５２
Ｐ−３５ ２．５ｍｍ幅を用い、回路部材２に８０℃、
１Ｍｐａ、５ｓで仮圧着を行い、１７０℃、２Ｍｐａ、
２０ｓで本圧着を行った。また、塗布処理を行わないも
のを比較例として作製した。この接続後通電試験用の接
続片には防湿処理を行い、通電試験を行った。印可電圧
はＤＣ１００Ｖとし、８５℃、８５％ＲＨ環境下で通電
試験を行った。一方、接続強度試験片はそのまま８５
℃、８５％ＲＨ環境下で放置し接続強度試験を行った。
その回路部材１及び２、硬化促進作用のある塗布処理剤
の仕様を表３に示す。表３に示す全ての実施例におい
て、実施例１及び２に同様、塗布処理を行った試験片は
初期及び信頼性試験において、マイグレーションによる
絶縁抵抗及び接続強度の劣化が抑制され、８５℃、８５
％ＲＨ環境下１０００ｈ処理後、絶縁抵抗評価において
１００Ｖ通電１０9 Ω以上、接続強度評価において７０
０ｇｆ／ｃｍ以上の良好な結果が得られた。一方、表３
に示す全ての比較例同様の試験において、絶縁抵抗評価
で１０9 Ω未満あるいはリークし、接続強度評価におい
ても５００ｇｆ／ｃｍ以下の結果であった。Examples 3 to 6 As the circuit member 1, various FPCs (10z, C
u, Ni / Au plated product P = 0.3), TCP (10
Circuit members using z, Cu, Ni / Au plated products P = 0.3) and semiconductor chips (10 × 10 mm, height 0.5 mm, 50 μm square bumps around four sides, metal electrodes 20 μm high) 10μ on an alkali-free glass substrate
Ag, Al, ITO at a pitch P = 0.3 mm at a height of m
Electrode-formed member, P with Au-plated Cu electrode
CB and FPC were used. As in the case of the first embodiment, the circuit members 1 and 2 were coated with various compounds having a curing promoting action as they were or with a solution diluted with toluene at 20 wt%. Then, anisotropic conductive material AC-2052
P-35 2.5 mm width, 80 ° C. for the circuit member 2,
Temporary compression bonding is performed at 1 Mpa and 5 s, and 170 ° C., 2 Mpa,
The final pressure bonding was performed in 20 seconds. In addition, those without the coating treatment were produced as comparative examples. After this connection, the connection piece for the conduction test was subjected to a moisture proof treatment, and the conduction test was performed. The applied voltage was set to DC 100 V, and an energization test was performed under an environment of 85 ° C. and 85% RH. On the other hand, the connection strength test piece was 85
It was left in an environment of 85 ° C. and 85% RH to perform a connection strength test.
Table 3 shows the specifications of the circuit members 1 and 2 and the coating agent having a curing promoting action. In all of the examples shown in Table 3, similarly to Examples 1 and 2, the test pieces subjected to the coating treatment in the initial and reliability tests were prevented from deteriorating the insulation resistance and the connection strength due to migration.
After 1000 hours of treatment in a% RH environment, 100 V conduction is 10 9 Ω or more in the insulation resistance evaluation and 70 in the connection strength evaluation.
Good results of 0 gf / cm or more were obtained. On the other hand, Table 3
In the same tests as in all the comparative examples shown in the above, the insulation resistance was less than 10 9 Ω or leaked, and the connection strength was also 500 gf / cm or less.
【００１３】[0013]
【表３】 [Table 3]
【００１４】 表３の仕様の詳細 回路部材１の種類：Ａ；接着剤無しＦＰＣ Ｂ；接着剤としてＮＢＲを使用していないＴＣＰ Ｃ；有機シリコン系の接着剤を使用したＴＣＰ Ｄ；チップ表面に絶縁層としてポリイミドを形成したチップ 回路部材２の種類：ａ；ガラス基板上にＡｇを形成した回路 ｂ；ガラス基板上にＡｌを形成した回路 ｃ；ガラス基板上にＩＴＯを形成した回路 ｄ；ＰＣＢ ｅ；ＦＰＣ上に金属電極を形成した回路 金属電極を形成した回路 ベンゾトリアゾール類： 処理剤１；１，２，３−ベンゾトリアゾール 処理剤２；３−ベンジル−５−アミノ−１，２，４−ト
リアゾール アミノシラン類： 処理剤３；γ−アミノプロピルトリエトキシシラン 処理剤４；Ｎ−β（アミノエチル）γ−アミノプロピル
トリエトキシシラン イミダゾール類： 処理剤５；２−メチルイミダゾール 処理剤６；２−エチル−４−メチル−イミダゾールDetails of Specifications in Table 3 Type of circuit member 1: A; FPC without adhesive B; TCP C without NBR as adhesive; TCP D with organic silicon based adhesive; on chip surface Chip with polyimide formed as insulating layer Type of circuit member 2: a; circuit with Ag formed on glass substrate b; circuit with Al formed on glass substrate c; circuit with ITO formed on glass substrate d; PCB e; Circuit in which metal electrode is formed on FPC Circuit in which metal electrode is formed Benzotriazoles: Treatment agent 1: 1,2,3-benzotriazole Treatment agent 2: 3-benzyl-5-amino-1,2,4 -Triazole aminosilanes: treating agent 3; γ-aminopropyltriethoxysilane treating agent 4; N-β (aminoethyl) γ-aminopropyltriethoxysilane Indazole compounds: processing agent 5; 2-methylimidazole treatment agent 6; 2-ethyl-4-methyl - imidazole
【００１５】[0015]
【発明の効果】本発明によれば、接続電極を有する回路
部材１と、前記回路部材１の接続電極に対峙する接続電
極を有する回路部材２を熱硬化性異方導電性接続部材を
介して接続する方法において、回路部材１、２の少なく
とも一方の電極面が前記異方導電性接続部材に対して硬
化促進作用を有する物質により覆ったものを用いること
により、マイグレーションが抑制され、接続強度の良好
な接続信頼性に優れた回路の接続が可能になった。According to the present invention, a circuit member 1 having a connection electrode and a circuit member 2 having a connection electrode facing the connection electrode of the circuit member 1 are connected via a thermosetting anisotropic conductive connection member. In the connection method, by using a material in which at least one electrode surface of the circuit members 1 and 2 is covered with a substance having a hardening promoting action on the anisotropic conductive connection member, migration is suppressed, and connection strength is reduced. Circuit connection with excellent connection reliability has become possible.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小林 宏治 茨城県下館市大字五所宮1150番地 日立化 成工業株式会社五所宮工場内 Ｆターム(参考） 4J040 HC24 HC25 HD36 JB02 JB10 KA17 LA09 LA11 MA05 NA20 PA03 PA05 PA07 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Koji Kobayashi 1150 Goshomiya, Oaza, Shimodate City, Ibaraki Prefecture F-term in the Goshonomiya Plant of Hitachi Chemical Co., Ltd. (reference) 4J040 HC24 HC25 HD36 JB02 JB10 KA17 LA09 LA11 MA05 NA20 PA03 PA05 PA07
Claims (3)
部材１の接続電極に対峙する接続電極を有する回路部材
２を熱硬化性異方導電性接続部材を介して接続する方法
において、回路部材１、２の少なくとも一方の電極面が
前記異方導電性接続部材に対して硬化促進作用を有する
物質により覆われていることを特徴とする電極の接続方
法。1. A method for connecting a circuit member 1 having a connection electrode and a circuit member 2 having a connection electrode facing the connection electrode of the circuit member 1 via a thermosetting anisotropic conductive connection member. A method for connecting electrodes, wherein at least one electrode surface of the members 1 and 2 is covered with a substance having a hardening promoting effect on the anisotropic conductive connection member.
Ｃ）、テープキャリアパッケージ（ＴＣＰ）または半導
体チップであり、回路部材２がガラス基板上に金属電極
あるいはＩＴＯ電極を形成した回路、印刷回路板（ＰＣ
Ｂ）またはＦＰＣである請求項１記載の電極の接続方
法。2. The circuit member 1 comprises a flexible circuit board (FP).
C), a tape carrier package (TCP) or a semiconductor chip, a circuit in which the circuit member 2 has metal electrodes or ITO electrodes formed on a glass substrate, a printed circuit board (PC
2. The method for connecting electrodes according to claim 1, which is B) or FPC.
くとも硬化促進作用を有する物質が、ベンゾトリアゾー
ル類、アミノシラン類およびイミダゾール類の中から選
ばれた化合物である請求項１又は２記載の電極の接続方
法。3. The compound according to claim 1, wherein the substance having at least a curing promoting effect on the thermosetting anisotropic conductive connecting member is a compound selected from benzotriazoles, aminosilanes and imidazoles. Electrode connection method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17248999A JP4253931B2 (en) | 1999-06-18 | 1999-06-18 | Electrode connection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17248999A JP4253931B2 (en) | 1999-06-18 | 1999-06-18 | Electrode connection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001006769A true JP2001006769A (en) | 2001-01-12 |
| JP4253931B2 JP4253931B2 (en) | 2009-04-15 |
Family
ID=15942941
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17248999A Expired - Fee Related JP4253931B2 (en) | 1999-06-18 | 1999-06-18 | Electrode connection method |
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| Country | Link |
|---|---|
| JP (1) | JP4253931B2 (en) |
Cited By (4)
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|---|---|---|---|---|
| JP2003064344A (en) * | 2001-08-30 | 2003-03-05 | Hitachi Chem Co Ltd | Adhesive for circuit connection and circuit-connected structural material using the same |
| JP2007246551A (en) * | 2006-03-13 | 2007-09-27 | Sony Chemical & Information Device Corp | Method for pasting adhesive layer, and adhesive film |
| CN100351688C (en) * | 2001-02-28 | 2007-11-28 | 株式会社日立制作所 | Liquid crystal display |
| JP2013010962A (en) * | 2012-08-20 | 2013-01-17 | Dexerials Corp | Adhesive film |
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| JP2013010962A (en) * | 2012-08-20 | 2013-01-17 | Dexerials Corp | Adhesive film |
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|---|---|
| JP4253931B2 (en) | 2009-04-15 |
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