JP2000514872A - Target structure with circular plate - Google Patents

Abstract

(57) Abstract: A circular plate (19) has, along its circular frame (21), at least one retreating and / or projecting shape (23) symmetric to the plane (E) and perpendicular to the central axis. , 43), wherein both sides of the plate are composed of a sputtering material. This allows the plate to be inverted and both sides can be subjected to sputtering.

Description

The present invention relates to a target structure as a prerequisite in claim 1, and further relates to a magnetron radiation particle source as a prerequisite in claim 17. And a film forming method as a precondition in claim 31. A magnet radiation particle source is known from EP-0127272, according to which a target structure symmetrically arranged with respect to the particle source is pressed behind a cooling plate by means of a clamping mechanism. The target structure includes a beam symmetrically tilted about a central axis that can be added to the square of the rotating square beam. The beam has inwardly receding features on both the outer and inner sides that extend longitudinally in a cross-section that includes the central axis, and the outer clamp beam and the inner clamp cleats support the beam and support the cooling plate. It bites into each other. A disadvantage of the known target structure is that if it is configured in a framed structure, after sputtering one sputtering surface, it can be rotated rather than to sputter its back surface, or the individual target Such a reversal of the beam is pre-established in that a strong pull of the eroded scattering surface against the cooling plate results in a sharp decrease in the target cooling which must occur in the new state of the target structure. That is not permitted by the laterally recessed features or clamping beams and cleats that are present. Therefore, the sputtering after the reversal of the clamping beam must be carried out with abrupt changes in the process parameters, in which case the sputtering efficiency is particularly strongly reduced. DE-OS-3009836 shows that better utilization of the target material to be sputtered can be achieved by positioning the target segment on a cooling body after its sputtering erosion. This requires reworking of different target clamp structures and target segments. The object of the present invention is to substantially improve the utilization of substances to be scattered and at the same time to establish particularly excellent film thickness uniformity on workpieces to be coated, especially on disk-shaped workpieces. It is to create a target structure that can be used. The task of developing a magnetron radiation particle source based on the sources proposed according to the invention is to enable improved utilization of sputtering materials, even on targets according to the invention. This is achieved by the structure of the magnetron radiation particle source according to the invention, according to the characterizing part of claim 17. According to the proposed film-forming method according to the invention, the above-mentioned method, which is distinguished according to the features of claim 31, is characterized in that, if the sequence is a series of cohesive coatings, In the case of different coatings to be performed, a particularly economical continuous coating of the workpiece is possible. Preferred embodiments of the target structure according to the invention, particularly those in which further improvement of the utilization of the sputtering material is to be expected with respect to particularly good film thickness uniformity on the workpiece, are specified in claims 2 to 16 ing. The preferred embodiment of the magnetron radiation particle source allows for the specific use of the potential provided by the target array structure according to the invention, and furthermore the deposition of sputtered material on the workpiece. The embodiments are specified in claims 18 to 30, while optimizing the efficiency with respect to the specified substances. The target structure, the magnetron emitting particle source according to the invention and the method according to the invention are suitable for film formation of optical memory plates by DVD, Photo-CDs and preferably by CD-R or phase change plates. ing. The present invention with a fundamental improvement in material efficiency is based on the formation of a sputtered film of a material having a great economical significance also with respect to the efficiency mentioned above by using expensive materials such as platinum, gold, silver and aluminum. It is particularly suitable for use in such applications. The invention will now be described by way of example with reference to the drawings. FIG. 1 is a schematic view of a longitudinal section of a magnetron radiation particle source according to the invention with a target structure according to the invention, FIG. 2 also schematically shows FIG. 3 is a further embodiment of the target according to the invention, with a corresponding clamping means on the side of the radiation particle source, in an illustration according to FIG. 1 and FIG. FIG. 4 shows a further embodiment of the target structure according to the invention and the corresponding clamping means on the radiation particle source side, FIG. 4 is a radial extension of the target structure according to the invention shown in FIG. FIG. 5 shows the erosion shape obtained as a result of a comparative experiment according to the invention; FIG. 5 shows a further embodiment of the target structure according to the invention, optimized with respect to the result as shown in FIG. FIG. 5 shows a further embodiment of the target structure according to the invention in an illustration similar to FIG. 5, FIG. 7 is an illustration similar to FIG. 5 or FIG. FIG. 8 shows an embodiment of the target structure as inserted into the source, FIG. 8 is an illustration similar to FIGS. 5 to 7 and shows yet another embodiment of the target structure according to the invention; 9 shows the thickness distribution as a function of target erosion depth in percent. According to FIG. 1, it shows a cross-sectional view of a half of a magnet structure according to the invention, having an assembled target structure, wherein the magnet emitting particle source is not only a base 3 but also a magnetron magnet system 9, It includes a cooling body 1 which also forms a side wall 5 which cylindrically surrounds the receiving space 7. As shown, the cooling body 1 is cooled by a cooling medium circulation system 11 having a cooling medium supply / discharge pipe 13 schematically shown. In the embodiment shown, the cooling body 1 is in direct contact with a cooling medium, such as water, provided in the system 11. For this purpose, a packing 15 shown schematically is provided. The cooling medium circulation system, however, is also separated by a heat-conducting interlayer or a sheet of cooling body 1. Furthermore, the cooling medium circulation system can also extend into the cooling body 1 if it is added to or replaced by the system as shown in FIG. 1 (not shown). The cooling body 1 is made of a material having good heat conductivity such as copper. The target structure 17 provided according to the invention and according to the invention per se has a plate 19 on which both plate-like surfaces 20o and 20u are made of the substance to be sputtered. Along a disk-shaped side surface 21 surrounding the disk-shaped plate 19, a flange 23 projects symmetrically with respect to the plate center axis Z toward a radial surface E having a center in the side surface 21. This is accommodated in a corresponding inwardly receding shape portion in the cooling body 1 and is firmly fixed by a fixing bolt 27 through a clamp 25. On the one hand, between the side face 21 of the plate 19 and the flange 23, and on the other hand, between the same side face and the cooling body 1 or the clamp ring 25, as between the clamp ring 25 and the cooling body 1, At the fixed-end plate 19 of the target structure 17, a close pressing contact is established between the previously mentioned parts 1, 25, 19 which establishes an optimal heat transfer. In the clamp ring 25, another part of the cooling medium circulation system, or a part thereof, may be provided (not shown). The plate 19 is separated from the underlying magnet system 9 only under the assembled condition by a gap 29, but it is also relatively thin, has good thermal conductivity and is permeable. A cover plate (not shown) may be used to separate the magnet system from the target structure 17 by forming a gap 29 between it and the lower surface of the plate 19. In each case, the lower surface 20u of the target structure 17 does not touch the underlying radiation particle source. Through the configuration of the radiation particle source and the target structure described above, the target structure 17 will be cooled by heat conduction beyond the side surface 21 and the flange 23, and the target structure 17 will be brought to the surface 20. After the erosion reaches a certain depth, the erosion can be reversed immediately, the lower surface 20u is secured without contact, and furthermore, after the inversion and erosion of one of the surfaces, the lower surface 20u can be removed from the target structure. The cooling ratio remains practically the same, and in the case of the plate 19 shown in FIG. 1 having a plane 20 symmetrical with respect to the plane E, all the processes and processes for continuing the film formation process after the inversion of the target structure are performed. It is possible to keep the parameters unchanged. Magnet system 9 beyond the target structure assembled, create two circulation-shaped tunnel field patterns B _a and B _i. In the preferred embodiment of the target structure 17, the radius R _{T of the} plate 19 is such that 85 mm ≦ _RT ≦ 105 mm. Furthermore, the radius R _Ta for the scattering material is preferably such that 75 mm ≦ R _Ta ≦ 78 mm. Further, the total pressure D _Z of the scattering material on the plate 19 corresponds to the thickness of the plate in the embodiment according to FIG. 1, but preferably becomes 8 mm ≦ D _Z ≦ 14 mm, particularly preferably 8 mm ≤ _DZ ≤ 10 mm. It is further preferred that the material to be scattered on the plate 19 be made of a metal such as aluminum or titanium, but in particular made of relatively expensive materials such as platinum, gold and silver. Especially gold is suitable. For the average radius R _Fi of the tunnel magnetic field B _i circulating mean radius R _Fa of the tunnel field B _a ring-shaped circulating outside and inside of the circular, preferably is to a 20mm ≦ R _Fi ≦ 30mm In this case, however, it is particularly preferable that 24 mm ≦ R _Fi ≦ 28 mm and / or 55 mm ≦ R _Fa ≦ 70 mm. Further, with respect to the average radius R _o of the tunnel magnetic field B between the regions circulating on the face 20o, preferably is to 35mm ≦ R _o ≦ 45mm holds. Further, the magnetic field component of each tunnel magnetic field B parallel to the scattering surface 20o is at most 60% of this component on the scattering surface 20o at a distance of 10 mm from the surface 20o, and at most 55% at most, Furthermore preferable that these magnetic field components is better inside the tunnel magnetic field B _i, is greater than in the outer tunnel field B _a. At a surface 20o, and observed at the center again tunnel field, but the magnetic field strength is at least 200G, it is preferably 350G, more desirably is at least 400G inside the tunnel magnetic field B _i. As is clear from FIG. 1, the cooling system 1 cools the magnet system 9 as well as the target structure with the plate 19. The discharge of heat from the target structure 17 takes place exclusively through the side faces 21 with the flanges 23, so that the reversal of the target structure is immediately possible due to the symmetrical fixing. In a further preferred embodiment, as shown by the thin lines in FIG. 1, the fixed area 31, that is, the peripheral area that is not sputtered, is made of a material having good heat conductivity such as copper. In FIG. 1, the flange is formed on the plate side, and the receiving groove is provided on the radiation particle beam source side. However, the corresponding flange is provided on the radiation particle beam source side, and the groove as the receiving mechanism is provided on the plate side without difficulty ( (Not shown) is possible. Through the interlocking receiving and receiving projections on the side 21 on the side of the target plate or radiation particle source, the heat transfer is optimized depending on the configuration of the contact surface. This also optimizes the ratio of the spread _RT of the plate to the spread _RTa of the utilized sputtering surface, due to the appropriate configuration of the fixed region 31 as mentioned above. The radiation particle source according to the invention further comprises an outer mask means 33 and an inner mask 35. Between the masks 33 and 35, a disk-shaped workpiece 37 for forming a film is placed. It is obvious that the masks 33 and 35 can be formed in a divided type consisting of a plurality of parts, but they take on the function of an electrode for plasma discharge in the sputtering process by a known method. The workpiece 37 and the plate upper surface 20o together with the masks 33 and 35 form a torus-shaped processing space 39. At that time, it is desirable that the maximum radius R _R of the torus space 39 larger than the radius R _T of the plate 19. Further, the symbol d indicates the distance between the flying scattering surface 20o and the film forming surface of the workpiece 37. The radius R _R of the torus space 39 is preferably larger than the radius R _T of the target plate 19 within the range of 20% to 70% of the interval d, and more preferably larger than 20% to 50%. is there. For each of the average radii R _Fa and R _Fi of the ring-shaped outer tunnel magnetic field and the inner tunnel magnetic field, it is preferable that 0.8 ≦ (R _Fa −R _Fi ) /d≦3.0 is satisfied. It is preferable that ≦ (R _Fa −R _Fi ) _/d≦2.2 . As for the distance d, the relationship of 15 mm ≦ d ≦ 30 mm is preferably applied, and in this case, the relationship of 20 mm ≦ d ≦ 25 mm is more preferable. When the radius R _W of the workpiece 37, it is desirable at most 25% smaller than the radius R _T, Although most desirably 20% smaller, it is desirable in particular at most 10% smaller. FIG. 2 shows a further embodiment of a target structure 17 having a plate 19 and its fixing means at the cooling body 1 in cross section. The plate 19 has, along its side 21, receiving parts 41 or projections 43, which are illustrated semicircularly in cross section as a preferred representation. The clamping ring 45, fixed on the side 21, is provided with a corresponding receiving part or projection. The clamp ring can be divided into a plurality of parts if necessary. This ring is firmly fixed to the cooling body 1 by fixing bolts 27. Upon reversal of the target structure, in this case, it consists of a plate 19 and a clamp ring 45, the latter remaining fixed to the plate 19. This embodiment allows the substance to be sputtered to be provided only in the target structure 17 in practice, as well as in the fixed area 31 previously shown in FIG. This measure can save about 25% of the material to be sputtered compared to the sputtering material provided on the outside ( _RT ) in the configuration of the target structure shown in FIG. In the case of a sputtering power of 3 kW, the target temperature is 154 ° C. at the peripheral portion and 182 ° C. at the central portion in the method shown in FIG. ° C. It is known that the consumption of the target per mm of target thickness usually decreases with increasing target thickness, while increasing clamping due to the increasing erosion depth of the erosion groove. The possibility of target structure inversion given in accordance with the present invention now makes it possible to exploit the initial extensive erosion properties on both sides and into the interior of the target, thereby providing an essential source of target material utilization. Improvements are brought. A further embodiment of the target structure 17 according to the invention with the clamp ring 55 and the cooling body 1 is apparent from FIG. 3 without further elucidation. In FIG. 4, for example, the erosion profiles on both sides with respect to the radius R of the target as shown in FIG. At that time, the magnetic field B _i and B _a, produced by the magnet system 9 is entered in accordance with the erosion profile. Following this profile, an optimization for the target structure according to the invention is derived, as described according to FIGS. The principle is that the material to be sputtered is provided essentially only in the target structure where it is to be sputtered, ie essentially only in the erosion groove region. According to FIG. 5, therefore, still another preferred embodiment 47 of the target structure comprises an annular ridge 49 i symmetrically in the plane E and divided by preferably 1 mm to 4 mm, more preferably 1 mm. The bridge 50 has a thickness of 2.5 mm to 2.5 mm and an outer annular ridge 49a. The arrangement of the ridges 49i and 49a is at the position of the erosion groove shown in FIG. Qualitatively, When The relationship is applied, whereby application of the preferred dimensions for the R _F previously described As a preferable relationship, 20 mm ≦ Z _i ≦ 35 mm is applied. Preferred relationship with respect to the width Z _a of the outer ridges, is applied 28mm ≦ Z _a ≦ 40 mm. The thickness of the bridge 50 is preferably about 1.5 mm. That is, it is about 0.75 mm on the symmetry plane E. According to FIG. 5, the entirety of the target structure 47 is uniformly made of the material to be sputtered, whereas in the embodiment according to FIG. 6, the bond plate 51 is made of a material which is not to be sputtered, on which the inner and outer material are placed. The bumps are formed of the material to be sputtered. FIG. 7 shows a target structure as configured at the radiation particle source shown in FIG. 1, and FIG. 8 shows a ridge provided on only one side, ie one sputtering surface. The configured target structure is shown. Obviously, in the embodiment shown in FIG. 7, a bond plate or a support plate is provided as in the embodiment shown in FIG. 8, as indicated by a thin line 51. In particular, in the case of a target structure with one bond plate 51, the plate areas to be sputtered can be composed of different materials. For a series of workpieces, if the target structure with the same sputtering material on both sides is configured at the radiation particle source shown in FIG. 1, the first of the series includes a target structure. A film is formed on one sputtering surface, and a second film is formed on a second sputtering surface after inverting the target structure. If the target structure uses different sputtering materials on the upper and lower sides, one part of the series of workpieces is filmed with one material, then the target structure is inverted and the series of workpieces is inverted. Is filmed with a second material, or the series is filmed with one material first and then with a second material. For example, one side is made of gold and the other side is made of aluminum. This combination is particularly used in the production of CD-Rs, where the masks 33 and 35 are first filmed with aluminum and then the mask can be used to chemically remove the gold film. FIG. 9 illustrates the dependence of film thickness dispersion on the filmed workpiece with increasing erosion of the target. Erosion is indicated by the number of workpieces that have been filmed. With 15,000 workpieces, the erosion depth reaches 4 mm. The variance has already deteriorated to ± 7% at this point, and worse with longer use of the target. Therefore, if a film is formed on 13,500 workpieces, it is indispensable to finish the further work. Obviously, if the number of workpieces to be filmed is larger, the target cannot simply be thickened, but only one side can be eroded deeper. FIG. 9 shows that beyond erosion beyond 4 mm, the film thickness dispersion deteriorates violently. Moreover, for thick targets, the degree of material utilization is inherently worse due to the clamping effect near the erosion groove. Thus, according to the invention, the double-sided use of the target, along with a reproducible dispersion situation, also leads to an inherently better utilization of the target material, which is the case for expensive materials such as precious metals, especially gold. In particular, it has inherently better results in an economic sense. The following example illustrates the difference between using an 8 mm thick target on one side or both sides. a) Single-sided use of target: target diameter Φ _A 152 / φ _I 25 mm Target thickness 8 mm New target weight 1227 g Target weight after sputtering 957.8 g Target use 22% b) Target diameter Φ _A 152 / φ _I 25 mm used on both sides of target Target thickness 8mm New target weight 1268g Target weight after sputtering 868.5g Target utilization 31.5% This result can be improved by about 50% compared to single-sided use, thereby significantly improving economic efficiency. It is shown that. The following advantages are obtained from the present invention:-Constant process parameters over the lifetime of the target-Rate, sputtering voltage and film thickness dispersion vary much less than in single-sided target sputtering, which means that Depending, the otherwise required normal correction of the process parameters is not a problem with regard to the life of the target. The film layer properties are kept constant, which is important especially in the production of CD-R, since here the outermost sensitive substrate is processed, such as in the case of dye-coated polycarbonate. is there. Target utilization is substantially improved, since the extreme plasma clamping effect is avoided by erosion before reaching the target center. Particle formation is reduced, thereby improving the stability of the process. That is, at the target, there is a so-called back cover area, that is, an area where the target material proliferates and grows. These are the areas where the atoms of the sputtered material settle down by scattering with the argon process gas. As the target insertion time increases, these sedimented layers tend to become thicker and more cracked and more resilient. This is manifested by short circuits and arcing. Since the method according to the invention results in the halving of the thickness of the sedimented layer, the reliability of the process is improved, as mentioned above. By planning a particular purposed target configuration, it may be possible to provide expensive sputtering materials in those situations only where it would be beneficial to use them. The symmetrical target placement and the cooling contact tied to it at the periphery of the target structure simplifies the cooling system on the radiation particle source side, and each target side can be securely fixed with the same clamping element, The number of required clamping elements is reduced. The exchange of the target structure is very simple and can be performed quickly. The measures according to the present invention go against conventional efforts to increase the thickness of the target to achieve a longer life of the target, thereby increasing the cycle of target replacement. A drawback with the conventional method was that a magnet that was always strong and therefore expensive had to be employed. The film-forming properties over the lifetime of the target were extremely heterogeneous, and the target utilization efficiency, for example in g / kWh, dropped dramatically with increasing target thickness. The area of the back cover was always thicker and the tendency for short circuits and arcing increased. Cooling contact between the target and the cooling element behind the target was also made in a conventional manner. All optimization efforts have resulted in increasing this contact surface. In so doing, these efforts hindered the construction and use of symmetrically reversible targets.

[Procedure of Amendment] Article 184-8, Paragraph 1 of the Patent Act [Submission date] June 8, 1998 (1998.6.8) [Correction contents] The scope of the claims 1. A target structure with a circular plate (19), its circulating periphery Along (21), at least symmetrically to a plane (E) perpendicular to the central axis (Z) of the plate One projection and / or recessed portion (23; 41, 43) is provided, The rate surfaces (20o, 20u) are composed of a sputtering material, so that Qualitatively, both plate surfaces are to form a new sputtering surface. 17． A ring formed by a pot having a surrounding side wall (5) and a base (3). A mold chamber (7) containing a magnet system; − A clamp for the target structure that can be opened around the side wall of the ring chamber. And a pump mechanism, The following: -The cooling medium introduction system is installed in the pot or with a base (3) Is mounted on a heat suppression block with a cooling medium introduction system (11). And that Whether the ring chamber (7) is open to the clamping mechanism (25); Characterized by being closed by a thin metal plate without active cooling means, 17. A magnetron radiation particle source according to one of the preceding claims.

Claims (1)

[Claims] 1. At least one protruding or receding part (23; 41, 43) is provided along the periphery (21) of the target structure, symmetrically with respect to a plane (E) and perpendicular to its central axis (Z). Target structure with a circular plate (19), characterized in that both plate surfaces (20o, 20u) consist essentially of sputtering material. 2. Whether the protruding part is formed as a flange projecting at right angles to the peripheral surface (21), or whether the recessed part is formed as a groove engraved at right angles to the peripheral surface (21). The structure according to claim 1, wherein the structure is one of: 3. The protruding or recessed portion is formed so as to exhibit an essentially semi-circular shape with respect to its cross-section, preferably with a diameter essentially corresponding to the thickness of the plate (19). The structure according to claim 1, wherein: 4. At least the peripheral region (31) of the plate (19) having the recessed and / or protruding features (23) is preferably made of a material having good heat conductivity, such as copper. A structure based on one of the three. 5. The plate (19) comprises: an upper, continuous or segmented or specially shaped flying scattering plate, and a bond plate and a lower, continuous, composed of the same or different material as the upper one; 5. Structure according to one of the claims 1 to 4, characterized in that it comprises a segmented or specially shaped flying scattering plate, or comprises a uniform flying scattering material plate. 6. 6. A structure according to claim 1, wherein said plane (E) is either symmetric with respect to both sputtering planes, or both sputtering planes are formed differently. 7. 7. A structure according to claim 1, wherein at least one of the sputtering surfaces has a ridge (49i, 49a) divided by an annular groove (50). 8. 8. The structure according to claim 1, wherein the plate has a central opening. 9. An annular clamping ring (45) made of a heat-conducting material, preferably of copper, is provided in or on the recessed or protruding shape of the plate (19) in a form-closed manner. A structure according to one of claims 1 to 8, characterized in that: Preferably, And / or The structure according to claim 7, wherein the following relationship holds. 11. Structure according to claim 7, characterized in that the target has a thickness of 1 mm to 4 mm, preferably 1.0 mm to 2.5 mm, in the region between the ridges. 12. Inside ridges its outer surface has a width Z _i satisfying the relation 20mm ≦ Z _i ≦ 35mm, and / or, at its upper side a width Z _a of the outer ridges, 28mm ≦ Z _a ≦ 40 mm of 8. The structure according to claim 7, having _a width Za that satisfies the relationship. 13. 13. Structure according to one of the preceding claims, characterized in that the following relationship holds with respect to the radius _RT of the plate (19): 85mm < _RT <105mm. 14． 14. The structure according to claim 1, wherein for a radius R _Ta of a plate (19) having a top surface made of a sputtering material, 75 mm ≦ R _Ta ≦ 78 mm. 15. The thickness of the region of the plate (19) comprising the sputtered material or the holding plate and the sputtered material is at most 14 mm and preferably between 8 mm and 12 mm (both boundaries are closed). A structure according to one of claims 1 to 14. 16. Structure according to one of the preceding claims, characterized in that the sputtering material is a metal such as aluminum or titanium, preferably a noble metal such as platinum, gold, silver, and more preferably gold. 17． -An annular chamber (7) with a magnet system (9);-a clamping mechanism (25) for the target structure (17) releasably provided around the annular chamber (7), The annular chamber (7) is composed of a pot with surrounding side walls (5) and a base (3), in which the cooling medium introduction system is integrated, or The chamber is mounted on a heat suppression block with a cooling medium introduction system (11); and the annular chamber (7) is open or to be mounted on a clamping mechanism (25). Magnetro for use in a target structure according to one of the preceding claims, characterized in that it is closed with a metal plate which is essentially thinner than the target structure (17). Radiation particle beam source. 18. 18. A radiation particle source according to claim 17, comprising a built-in target structure, characterized in that the lower side (20u) of the target plate (19) is remote with respect to the magnet system (9). 19. The radiation particle source according to claim 19, wherein the clamping mechanism (25) radially supports the target structure (17) and further fixes it against the pot wall (1). 20. The clamping mechanism comprises an annular clamping ring (25), the inner boundary of which radially connects the target structure, and the ring supports the pot wall (1). A radiation particle source based on one of 17 to 19. 21. Radiation particle source according to one of claims 17 to 20, characterized in that the clamping mechanism comprises a cooling medium introduction system. 22. The magnet system creates two circulating tunnel-type magnetic field patterns beyond the target upper surface, where the average radius R _Fi of the inner magnetic field tunnel and the average radius R _{Fa of the} outer magnetic field are in a relationship of 20 mm ≦ R _Fi ≦ 30 mm. The radiation particle source according to one of claims 17 to 21, characterized in that it preferably satisfies the relationship 24 mm ≤ R _Fi ≤ 28 mm or the relationship 55 mm ≤ R _Fa ≤ 70 mm. 23. The average radius R _o is characterized in that it satisfies the following relationship, 35mm ≦ R _o ≦ 45mm, radiation particle beam sources based on claim 22 between the tunnel field. 24. The mounting (33) is provided coaxially with the symmetry axis (Z) of the radiation particle source for receiving the disk-shaped workpiece (37), and furthermore the magnet system (9) is mounted. Creating two circular tunneling magnetic field patterns beyond the target structure (17), wherein the inner tunnel ring has an average radius R _Fi , the outer one has an average radius R _Fa , and Furthermore, the distance between the receiving surface for the workpiece (37) and the surface of the target structure (17) facing the workpiece is d, and furthermore, 0.8 ≤ (R _Fa -R _Fi 24) according to one of the claims 17 to 23, characterized in that a relationship of 1.0) (R _Fa -R _Fi ) _/d≤2.2 is preferably _fulfilled. Radiation particle source. 25. The magnet system (9) creates two circulating ring-shaped tunnel magnetic field patterns (B _a , B _i ) beyond the target structure, and the maximum horizontal tunnel magnetic field component is at most 60% at a distance of 10 mm from the upper surface of the target structure. , Preferably at most 55% of this component is brought to the upper surface (20 _° ) of the target structure, this component preferably being in the inner ring-shaped circulating tunnel field (B _i ) and the outer field (B _a ). Radiation particle source according to one of the claims 17 to 24, characterized in that it is larger than that in. 26. The magnet system (9) creates two ring-shaped circular tunneling magnetic fields (B _i , B _a ) beyond the target upper surface (20o) and the maximum magnetic field component in the target surface (20o) is at least 200G, Radiation particle radiation source according to one of the claims 17 to 25, characterized in that it preferably reaches 350 G, with particular preference the inner tunnel magnetic field (B _i ) reaches at least 400 G. 27. 25. The radiation particle source according to claim 24, characterized in that the relationship 15 mm <d <30 mm holds, preferably the relationship 20 mm <d <25 mm holds. 28. A fixture is formed for the workpiece disk (37), whose radius (R _W ) is at most 25% smaller than the outer radius (R _T ) of the target structure plate, preferably at most 20% smaller, in particular: Radiation particle source according to claim 24, characterized in that it is at most 10% smaller. 29. The workpiece (37) disposed on the fixture (33) and the sputter surface (20o) of the target structure (17) determine the upper or lower wall of the torus-shaped processing space (39). A radiation particle source according to claim 24. 30. The maximum radius (R _R ) of the torus space (39) is larger than the outer radius (R _T ) of the sputter surface (20o) of the target structure (17), preferably larger in the range of 20% to 70% than d, especially more. Radiation particle source according to claim 29, characterized in that it is preferably greater than d in the range of 20% to 50%. 31. A first part of the series of workpieces is sputtered; a target structure is directed at the radiation particle source; a second part of the series of workpieces is sputtered; or A series of disk-shaped workpieces according to one of the claims 17 to 30, characterized in that a sputtered film is produced, the target structure is inverted, and a series of workpieces is produced up to twice. Method of film formation with magnetron radiation particle source based on. 32. Use of a target structure according to one of the claims 1 to 16, or use of a radiation particle source according to one of the claims 17 to 30, or DVD or Photo-CDs, preferably a CD-R or phase. Use of the method according to claim 31 for the film formation of an optical memory plate, such as a change plate.